JP7382978B2 - 半導体製造装置用部材及びプラグ - Google Patents

半導体製造装置用部材及びプラグ Download PDF

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Publication number
JP7382978B2
JP7382978B2 JP2021016385A JP2021016385A JP7382978B2 JP 7382978 B2 JP7382978 B2 JP 7382978B2 JP 2021016385 A JP2021016385 A JP 2021016385A JP 2021016385 A JP2021016385 A JP 2021016385A JP 7382978 B2 JP7382978 B2 JP 7382978B2
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JP
Japan
Prior art keywords
plug
flow path
gas flow
gas
semiconductor manufacturing
Prior art date
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Application number
JP2021016385A
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English (en)
Japanese (ja)
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JP2022119338A (ja
Inventor
征樹 石川
泰穂 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
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NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2021016385A priority Critical patent/JP7382978B2/ja
Priority to TW110145429A priority patent/TWI824350B/zh
Priority to US17/457,725 priority patent/US12040160B2/en
Priority to KR1020210178710A priority patent/KR102728858B1/ko
Priority to CN202210096313.6A priority patent/CN114864435A/zh
Publication of JP2022119338A publication Critical patent/JP2022119338A/ja
Priority to JP2023189249A priority patent/JP7580555B2/ja
Application granted granted Critical
Publication of JP7382978B2 publication Critical patent/JP7382978B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Glass Compositions (AREA)
JP2021016385A 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ Active JP7382978B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021016385A JP7382978B2 (ja) 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ
TW110145429A TWI824350B (zh) 2021-02-04 2021-12-06 半導體製造裝置用構件以及塞
US17/457,725 US12040160B2 (en) 2021-02-04 2021-12-06 Semiconductor-manufacturing apparatus member and plug
KR1020210178710A KR102728858B1 (ko) 2021-02-04 2021-12-14 반도체 제조 장치용 부재 및 플러그
CN202210096313.6A CN114864435A (zh) 2021-02-04 2022-01-26 半导体制造装置用构件以及塞子
JP2023189249A JP7580555B2 (ja) 2021-02-04 2023-11-06 半導体製造装置用部材及びプラグ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021016385A JP7382978B2 (ja) 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023189249A Division JP7580555B2 (ja) 2021-02-04 2023-11-06 半導体製造装置用部材及びプラグ

Publications (2)

Publication Number Publication Date
JP2022119338A JP2022119338A (ja) 2022-08-17
JP7382978B2 true JP7382978B2 (ja) 2023-11-17

Family

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JP2021016385A Active JP7382978B2 (ja) 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ
JP2023189249A Active JP7580555B2 (ja) 2021-02-04 2023-11-06 半導体製造装置用部材及びプラグ

Family Applications After (1)

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JP2023189249A Active JP7580555B2 (ja) 2021-02-04 2023-11-06 半導体製造装置用部材及びプラグ

Country Status (5)

Country Link
US (1) US12040160B2 (enExample)
JP (2) JP7382978B2 (enExample)
KR (1) KR102728858B1 (enExample)
CN (1) CN114864435A (enExample)
TW (1) TWI824350B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7616762B2 (ja) * 2020-12-14 2025-01-17 東京エレクトロン株式会社 プラズマ処理装置
JP7744328B2 (ja) * 2022-12-21 2025-09-25 日本碍子株式会社 半導体製造装置用部材、プラグ及びプラグ製造方法
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
WO2025177564A1 (ja) * 2024-02-22 2025-08-28 日本碍子株式会社 半導体製造装置用部材
WO2026063179A1 (ja) * 2024-09-18 2026-03-26 京セラ株式会社 試料保持具
JP7711292B1 (ja) * 2024-10-17 2025-07-22 日本特殊陶業株式会社 保持装置、および、保持装置の製造方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2019519927A (ja) 2016-06-07 2019-07-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ガス孔に開口縮小プラグを有する大電力静電チャック
JP2020057786A (ja) 2018-09-28 2020-04-09 日本碍子株式会社 半導体製造装置用部材

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US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6490145B1 (en) 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
US20090086401A1 (en) 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
JP5331519B2 (ja) 2008-03-11 2013-10-30 日本碍子株式会社 静電チャック
JP5665265B2 (ja) 2008-06-24 2015-02-04 東京エレクトロン株式会社 チャンバー部品を介してプロセス流体を導入する方法及びシステム
JP5449750B2 (ja) 2008-11-19 2014-03-19 株式会社日本セラテック 静電チャックおよびその製造方法
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JP2020057786A (ja) 2018-09-28 2020-04-09 日本碍子株式会社 半導体製造装置用部材

Also Published As

Publication number Publication date
TWI824350B (zh) 2023-12-01
US12040160B2 (en) 2024-07-16
US20220246398A1 (en) 2022-08-04
JP2022119338A (ja) 2022-08-17
JP7580555B2 (ja) 2024-11-11
CN114864435A (zh) 2022-08-05
KR102728858B1 (ko) 2024-11-11
TW202232628A (zh) 2022-08-16
KR20220112664A (ko) 2022-08-11
JP2024009020A (ja) 2024-01-19

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