CN114864435A - 半导体制造装置用构件以及塞子 - Google Patents

半导体制造装置用构件以及塞子 Download PDF

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Publication number
CN114864435A
CN114864435A CN202210096313.6A CN202210096313A CN114864435A CN 114864435 A CN114864435 A CN 114864435A CN 202210096313 A CN202210096313 A CN 202210096313A CN 114864435 A CN114864435 A CN 114864435A
Authority
CN
China
Prior art keywords
plug
gas
flow path
gas flow
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210096313.6A
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English (en)
Chinese (zh)
Inventor
石川征树
青木泰穗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN114864435A publication Critical patent/CN114864435A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Glass Compositions (AREA)
CN202210096313.6A 2021-02-04 2022-01-26 半导体制造装置用构件以及塞子 Pending CN114864435A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-016385 2021-02-04
JP2021016385A JP7382978B2 (ja) 2021-02-04 2021-02-04 半導体製造装置用部材及びプラグ

Publications (1)

Publication Number Publication Date
CN114864435A true CN114864435A (zh) 2022-08-05

Family

ID=82611592

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210096313.6A Pending CN114864435A (zh) 2021-02-04 2022-01-26 半导体制造装置用构件以及塞子

Country Status (5)

Country Link
US (1) US12040160B2 (enExample)
JP (2) JP7382978B2 (enExample)
KR (1) KR102728858B1 (enExample)
CN (1) CN114864435A (enExample)
TW (1) TWI824350B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI892362B (zh) * 2022-12-21 2025-08-01 日商日本碍子股份有限公司 半導體製造裝置用構件、插栓及插栓製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7616762B2 (ja) * 2020-12-14 2025-01-17 東京エレクトロン株式会社 プラズマ処理装置
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
WO2025177564A1 (ja) * 2024-02-22 2025-08-28 日本碍子株式会社 半導体製造装置用部材
WO2026063179A1 (ja) * 2024-09-18 2026-03-26 京セラ株式会社 試料保持具
JP7711292B1 (ja) * 2024-10-17 2025-07-22 日本特殊陶業株式会社 保持装置、および、保持装置の製造方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2013232641A (ja) * 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
CN105074901A (zh) * 2013-03-29 2015-11-18 Toto株式会社 静电吸盘
US20170243726A1 (en) * 2016-02-18 2017-08-24 Lam Research Corporation 3d printed plasma arrestor for an electrostatic chuck
CN110970327A (zh) * 2018-09-28 2020-04-07 日本碍子株式会社 半导体制造装置用部件
US20200135528A1 (en) * 2018-10-30 2020-04-30 Toto Ltd. Electrostatic chuck

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US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6490145B1 (en) 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
US20090086401A1 (en) 2007-09-28 2009-04-02 Intevac, Inc. Electrostatic chuck apparatus
JP5331519B2 (ja) 2008-03-11 2013-10-30 日本碍子株式会社 静電チャック
JP5665265B2 (ja) 2008-06-24 2015-02-04 東京エレクトロン株式会社 チャンバー部品を介してプロセス流体を導入する方法及びシステム
JP5449750B2 (ja) 2008-11-19 2014-03-19 株式会社日本セラテック 静電チャックおよびその製造方法
KR101040697B1 (ko) * 2009-11-25 2011-06-13 세메스 주식회사 정전척
US9608550B2 (en) 2015-05-29 2017-03-28 Lam Research Corporation Lightup prevention using multi-layer ceramic fabrication techniques
JP6634315B2 (ja) * 2016-03-03 2020-01-22 日本特殊陶業株式会社 保持装置および保持装置の製造方法
US10770270B2 (en) 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
KR102438888B1 (ko) 2017-07-06 2022-08-31 엔지케이 인슐레이터 엘티디 반도체 제조 장치용 부재 및 그 제조법
JP6504532B1 (ja) * 2018-03-14 2019-04-24 Toto株式会社 静電チャック
US11456161B2 (en) * 2018-06-04 2022-09-27 Applied Materials, Inc. Substrate support pedestal
JP7402411B2 (ja) * 2018-10-30 2023-12-21 Toto株式会社 静電チャック
JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
CN113228496B (zh) 2019-01-24 2024-08-20 京瓷株式会社 静电卡盘
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2013232641A (ja) * 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
CN105074901A (zh) * 2013-03-29 2015-11-18 Toto株式会社 静电吸盘
US20170243726A1 (en) * 2016-02-18 2017-08-24 Lam Research Corporation 3d printed plasma arrestor for an electrostatic chuck
CN110970327A (zh) * 2018-09-28 2020-04-07 日本碍子株式会社 半导体制造装置用部件
US20200135528A1 (en) * 2018-10-30 2020-04-30 Toto Ltd. Electrostatic chuck

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI892362B (zh) * 2022-12-21 2025-08-01 日商日本碍子股份有限公司 半導體製造裝置用構件、插栓及插栓製造方法

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TWI824350B (zh) 2023-12-01
JP7382978B2 (ja) 2023-11-17
US12040160B2 (en) 2024-07-16
US20220246398A1 (en) 2022-08-04
JP2022119338A (ja) 2022-08-17
JP7580555B2 (ja) 2024-11-11
KR102728858B1 (ko) 2024-11-11
TW202232628A (zh) 2022-08-16
KR20220112664A (ko) 2022-08-11
JP2024009020A (ja) 2024-01-19

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