TWI824071B - 中心檢測方法 - Google Patents

中心檢測方法 Download PDF

Info

Publication number
TWI824071B
TWI824071B TW108144330A TW108144330A TWI824071B TW I824071 B TWI824071 B TW I824071B TW 108144330 A TW108144330 A TW 108144330A TW 108144330 A TW108144330 A TW 108144330A TW I824071 B TWI824071 B TW I824071B
Authority
TW
Taiwan
Prior art keywords
outer peripheral
detection area
pixel
axis direction
light
Prior art date
Application number
TW108144330A
Other languages
English (en)
Chinese (zh)
Other versions
TW202022313A (zh
Inventor
大森崇史
小池彩子
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202022313A publication Critical patent/TW202022313A/zh
Application granted granted Critical
Publication of TWI824071B publication Critical patent/TWI824071B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW108144330A 2018-12-05 2019-12-04 中心檢測方法 TWI824071B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018228008A JP7185510B2 (ja) 2018-12-05 2018-12-05 中心検出方法
JP2018-228008 2018-12-05

Publications (2)

Publication Number Publication Date
TW202022313A TW202022313A (zh) 2020-06-16
TWI824071B true TWI824071B (zh) 2023-12-01

Family

ID=70776525

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108144330A TWI824071B (zh) 2018-12-05 2019-12-04 中心檢測方法

Country Status (5)

Country Link
JP (1) JP7185510B2 (ko)
KR (1) KR20200068584A (ko)
CN (1) CN111276412B (ko)
DE (1) DE102019218969A1 (ko)
TW (1) TWI824071B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112539714B (zh) * 2020-06-30 2022-07-26 深圳中科飞测科技股份有限公司 一种偏心检测方法、检测方法、处理方法及检测设备
CN112767363B (zh) * 2021-01-22 2023-03-14 电子科技大学 一种对线图进行目标检测的方法
CN114628299B (zh) * 2022-03-16 2023-03-24 江苏京创先进电子科技有限公司 晶圆对中确认方法及太鼓环切割方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090116727A1 (en) * 2006-05-02 2009-05-07 Accretech Usa, Inc. Apparatus and Method for Wafer Edge Defects Detection
US20090304258A1 (en) * 2005-12-06 2009-12-10 Yoshinori Hayashi Visual Inspection System
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
JP2015133371A (ja) * 2014-01-10 2015-07-23 株式会社ディスコ マーク検出方法
US9734568B2 (en) * 2014-02-25 2017-08-15 Kla-Tencor Corporation Automated inline inspection and metrology using shadow-gram images

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08149522A (ja) * 1994-09-20 1996-06-07 Matsushita Electric Ind Co Ltd 位置検出装置及び画像補正装置
JP3963300B2 (ja) 2000-11-07 2007-08-22 株式会社安川電機 ウエハの外周位置検出方法およびその方法を実行させるプログラムを記録したコンピュータ読み取り可能な記録媒体ならびにウエハの外周位置検出装置。
JP2005268530A (ja) 2004-03-18 2005-09-29 Olympus Corp 半導体ウエハのアライメント装置
JP2006093333A (ja) 2004-09-22 2006-04-06 Disco Abrasive Syst Ltd 切削方法
JP5360403B2 (ja) * 2009-09-29 2013-12-04 サクサ株式会社 移動体撮像装置
JP5486405B2 (ja) 2010-05-27 2014-05-07 株式会社ディスコ ウェーハの中心位置検出方法
JP6174980B2 (ja) 2013-11-22 2017-08-02 株式会社ディスコ ウェーハの検出方法
JP6555211B2 (ja) 2016-08-15 2019-08-07 Ｊｆｅスチール株式会社 二次元画像のエッジ抽出方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090304258A1 (en) * 2005-12-06 2009-12-10 Yoshinori Hayashi Visual Inspection System
US20090116727A1 (en) * 2006-05-02 2009-05-07 Accretech Usa, Inc. Apparatus and Method for Wafer Edge Defects Detection
JP5318784B2 (ja) * 2007-02-23 2013-10-16 ルドルフテクノロジーズ インコーポレイテッド エッジビード除去プロセスを含む、ウェハ製造モニタリング・システム及び方法
JP2015133371A (ja) * 2014-01-10 2015-07-23 株式会社ディスコ マーク検出方法
US9734568B2 (en) * 2014-02-25 2017-08-15 Kla-Tencor Corporation Automated inline inspection and metrology using shadow-gram images

Also Published As

Publication number Publication date
TW202022313A (zh) 2020-06-16
DE102019218969A1 (de) 2020-06-10
KR20200068584A (ko) 2020-06-15
CN111276412A (zh) 2020-06-12
JP7185510B2 (ja) 2022-12-07
JP2020091177A (ja) 2020-06-11
CN111276412B (zh) 2024-06-07

Similar Documents

Publication Publication Date Title
TWI824071B (zh) 中心檢測方法
EP2631868B1 (en) Image processing device and method for image processing
JP5057489B2 (ja) アライメント装置及びアライメント方法
KR102531216B1 (ko) 스크라이브 장치
JP6602705B2 (ja) ウェハエッジ検査装置
JP7427333B2 (ja) エッジアライメント方法
JP2013534312A (ja) ウェハのソーマークの三次元検査のための装置および方法
JP2016145887A (ja) 検査装置および検査方法
TW202129729A (zh) 加工裝置
JP2008014700A (ja) ワークの検査方法及びワーク検査装置
JP2005268530A (ja) 半導体ウエハのアライメント装置
KR20210007852A (ko) 웨이퍼 검사 장치
JP2013191775A (ja) 部品実装装置、および、部品形状測定方法
TWI504859B (zh) 拍攝並拼接物件影像的方法
JP7300938B2 (ja) カーフの認識方法
JP5978002B2 (ja) 検査方法及び外観検査装置
KR20220133780A (ko) 가공 장치
JP4634250B2 (ja) 矩形部品の画像認識方法及び装置
JP5782348B2 (ja) 位置検出装置、描画装置、および、位置検出方法
JP2009250777A (ja) 表面検査装置および表面検査方法
WO2024195819A1 (ja) ワーク外観検査装置及び方法
JP6014386B2 (ja) ガラス板の照明装置及び加工装置
JP2008191017A (ja) 板状体の欠陥検出方法
TW202333217A (zh) 校準方法
JP2007142009A (ja) ボンディング装置