TWI814995B - 陶瓷加熱器及其製法 - Google Patents

陶瓷加熱器及其製法 Download PDF

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TWI814995B
TWI814995B TW109107656A TW109107656A TWI814995B TW I814995 B TWI814995 B TW I814995B TW 109107656 A TW109107656 A TW 109107656A TW 109107656 A TW109107656 A TW 109107656A TW I814995 B TWI814995 B TW I814995B
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flat plate
cylindrical shaft
power supply
mentioned
resistance heating
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曻和宏
木村拓二
本山修一郎
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日商日本碍子股份有限公司
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Abstract

本發明的陶瓷加熱器10,係具備有:陶瓷製平板20、陶瓷製筒狀軸40、及供電構件54a,54b;該陶瓷製平板20係上面設有晶圓載置面20a、且內部埋設電阻發熱體24;該陶瓷製筒狀軸40係上端接合於平板20下面;該供電構件54a,54b係朝上下方向貫穿筒狀軸40的周壁部,且與電阻發熱體24電氣式耦接。供電構件54a,54b係埋設於筒狀軸40的周壁部,且與筒狀軸40的陶瓷材料密接。

Description

陶瓷加熱器及其製法
本發明係關於陶瓷加熱器及其製法。
半導體製造裝置有採用為加熱晶圓用的陶瓷加熱器。此種陶瓷加熱器已有有如專利文獻1所揭示,具備有:陶瓷製平板、陶瓷製筒狀軸、及供電構件;而,該陶瓷製平板係內建有電阻發熱體;該陶瓷製筒狀軸係接合於該平板的下面;該供電構件係電氣式耦接於電阻發熱體,該電阻發熱體係分別插通於朝上下方向貫穿筒狀軸周壁的貫穿孔中。又,有說明因為各供電構件係插通於貫穿孔,因而相互不會有電氣性接觸的可能性,即便多數存在電阻發熱體,但分別可經由供電構件對其進行良好供電。 [先行技術文獻] [專利文獻]
[專利文獻1]日本專利特開2017-162878號公報
然而,專利文獻1的供電構件,因為係具有餘隙地插通於朝上下方向貫穿筒狀軸周壁的貫穿孔中,因而若應力作用於供電構件,供電構件便會在貫穿孔內出現左右振動,導致供電構件與電阻發熱體的接合會有脫離的可能性。
本發明係為解決此種課題而完成,主要目的在於:即使應力作用於供電構件,但仍可確保供電構件與電阻發熱體之接合。
本發明的陶瓷加熱器,係具備有: 陶瓷製平板,其係上面設有晶圓載置面、且內部埋設電阻發熱體; 陶瓷製筒狀軸,其係接合於上述平板的下面;以及 供電構件,其係朝上下方向貫穿上述筒狀軸的周壁部,且與上述電阻發熱體電氣式耦接; 其中, 上述供電構件係埋設於上述筒狀軸的周壁部,且與上述筒狀軸的陶瓷材料密接。
該陶瓷加熱器中,供電構件係埋設於筒狀軸的周壁部,且與筒狀軸的陶瓷材料密接。因而,即使應力作用於供電構件,但供電構件仍不會在筒狀軸的周壁部內出現搖擺晃動,俾確保供電構件與電阻發熱體的接合。
另外,本說明書中,「上」、「下」並非表示絕對性位置關係,而是表示相對性位置關係。所以,依照陶瓷加熱器地朝向,「上」、「下」可能成為「左」、「右」、亦可能成為「前」、「後」、亦可能成為「下」、「上」。
本發明的陶瓷加熱器中,上述筒狀軸亦可上端具有外向凸緣;上述供電構件亦可通過上述外向凸緣而電氣式耦接於上述電阻發熱體。依此,在陶瓷加熱器製造時,若將筒狀軸的外向凸緣壓抵於平板下面,因為供電構件被壓抵於電阻發熱體,因而可在確保供電構件與電阻發熱體間之導通狀態下,將筒狀軸與平板予以接合。
本發明的陶瓷加熱器中,上述筒狀軸亦可從下端起至既定高度處呈小徑部,從上述既定高度起至上述上端呈直徑較大於上述小徑部的擴徑部。依此的話,即便多數設置電阻發熱體,仍可依每個電阻發熱體較輕易連接供電構件。
本發明的陶瓷加熱器中,上述平板亦可具備有:配置於上述平板內周區的內周電阻發熱體、以及配置於上述平板外周區且當作上述電阻發熱體用的外周電阻發熱體。依此,外周電阻發熱體所連接的供電構件便非配置於筒狀軸的內部空間。所以,可將筒狀軸的內部空間利用於其他目的。
此情況,上述內周電阻發熱體亦可經由內周連接端子,電氣式耦接於在筒狀軸內部空間配置的供電構件;上述內周連接端子的端面亦可位於在上述平板下面所設置孔的底面。依此,可將筒狀軸的內部空間利用於供配置連接於內周電阻發熱體的供電構件用。又,內周連接端子的端面位於在平板下面所設置孔的底面,此種構造係適用採取將筒狀軸與平板進行接合時,呈現內周連接端子埋設於平板中的狀態,經接合後在平板下面設置孔,且在該孔的底面露出內周連接端子的製法。依此,在筒狀軸與平板接合時可防止內周連接端子變質。
本發明陶瓷加熱器的製法,係包括有下述(a)~(d)的步驟: (a)在供製作陶瓷製筒狀軸內壁用的第1模鑄成形體外面,朝上下方向狀態配置供電構件,並將供製作上述筒狀軸外壁用的第2模鑄成形體,配置於上述第1模鑄成形體的外面,而獲得筒狀成形體的步驟; (b)藉由將上述筒狀成形體施行煅燒,而獲得上述筒狀軸的步驟; (c)準備埋設有電阻發熱體的陶瓷製平板,且分別接觸於上述電阻發熱體二端的連接端子,露出於上述平板接合面者的步驟; (d)使上述供電構件露出於上述筒狀軸的接合面,在上述供電構件與上述平板的上述連接端子之間配置金屬接合材,且在上述筒狀軸的接合面與上述平板的接合面之間配置陶瓷接合材狀態下,將上述筒狀軸按押於上述平板上施行加熱,藉此將上述平板與上述筒狀軸予以接合的步驟。
根據此種陶瓷加熱器的製法,可較輕易製作上述陶瓷加熱器。即,該製法係適用於製造上述陶瓷加熱器。又,根據該製法,筒狀軸無需開設供電構件插通用的貫穿孔,因為在筒狀軸與平板接合之同時,亦施行供電構件與電阻發熱體的接合,因而製造作業的效率獲大幅改善。
本發明的陶瓷加熱器製法中,上述步驟(a)亦可製作上述筒狀成形體具有外向凸緣,且使上述供電構件呈通過上述外向凸緣狀態;上述步驟(d)亦可使上述供電構件露出於上述筒狀軸的上述外向凸緣端面,在上述供電構件與上述連接端子之間配置上述金屬接合材,且在上述外向凸緣端面與上述平板接合面之間配置上述陶瓷接合材狀態下,將上述外向凸緣按押於上述平板進行加熱,藉此將上述平板與上述筒狀軸進行接合。依此,若將筒狀軸的外向凸緣壓抵於平板,則供電構件便同時被壓抵於電阻發熱體,因而可在確保供電構件與電阻發熱體之導通情況下,將筒狀軸與平板予以接合。
本發明的陶瓷加熱器製法中,上述筒狀軸亦可從上述筒狀軸接合面的背後端面起至既定高度呈小徑部,從上述既定高度起至上述接合面呈直徑較大於上述小徑部的擴徑部。依此,即便多數設置電阻發熱體,仍可較輕易地對每個電阻發熱體連接供電構件。
本發明的陶瓷加熱器製法中,上述步驟(c)的上述平板亦可準備:在上述平板內周區設有內周電阻發熱體,且在上述平板外周區設有當作上述電阻發熱體用的外周電阻發熱體者。依此,外周電阻發熱體所連接的供電構件便不會被配置於筒狀軸的內部空間中。所以,筒狀軸的內部空間便可利用於其他目的。
此情況,上述內周電阻發熱體係經由內周連接端子,電氣式耦接於在上述筒狀軸內部空間所配置的供電構件;上述步驟(d)中,當將上述平板與上述筒狀軸進行接合時,上述內周連接端子不會露出於上述平板而呈被埋設於上述平板中的狀態,在上述平板與上述筒狀軸進行接合後,亦可在上述平板中設置孔,使上述內周連接端子的端面露出於上述孔的底面。依此,可將筒狀軸的內部空間利用為供配置連接內周電阻發熱體的供電構件用。又,在筒狀軸與平板進行接合時,可防止內周連接端子出現變質。
針對本發明較佳實施形態參照圖式說明如下。圖1所示係陶瓷加熱器10的立體示意圖,圖2所示係圖1的A-A剖視圖。
陶瓷加熱器10係供經處理蝕刻、CVD等處理過的晶圓施行加熱用,設置於未圖示真空腔內。該陶瓷加熱器10係具備有:上面設有晶圓載置面20a的陶瓷製平板20、與接合於該平板20下面20b的陶瓷製筒狀軸40。
平板20係由例如:氮化鋁、氧化鋁等陶瓷材料構成的圓盤狀平板。平板20的直徑並無特別的限定,例如300mm程度。平板20係與平板20呈同心圓狀的假想邊界20c(參照圖1參照),區分為小圓形內周區Z1與圓環狀外周區Z2。在平板20的內周區Z1中埋設內周電阻發熱體21,在外周區Z2中埋設外周電阻發熱體24。二電阻發熱體21,24係由以例如:鉬、鎢或碳化鎢為主成分的線圈構成。
筒狀軸40係與平板20同樣,由氮化鋁、氧化鋁等陶瓷形成。筒狀軸40係上端固相接合或擴散接合於平板20。筒狀軸40中,從下端起至既定高度呈直徑一定的小徑部42,從既定高度起至上端呈直徑較大於小徑部42的擴徑部44。本實施形態,擴徑部44形成越靠上端則直徑越大的形狀。在筒狀軸40的上端設有外向凸緣46。
內周電阻發熱體21係從其中一端部21a,依一筆畫要領在複數返折部返折且幾乎遍佈內周區Z1全域的軌跡,形成至另一端部21b的另一端。端部21a,21b係在平板20中設置於筒狀軸40的內側區域(軸內區域)。端部21a係經由圓柱狀連接端子22a連接於供電構件51a,端部21b係經由圓柱狀連接端子22b連接於供電構件51b。連接端子22a,22b的下端面係位於在平板20下面20b設置的圓孔23a,23b底面。供電構件51a,51b係連接於未圖示的第1外部電源。所以,內周電阻發熱體21被從第1外部電源,經由供電構件51a,51b與連接端子22a,22b供應電力。另外,供電構件51a,51b亦可由絕緣材被覆著金屬絲線、或者亦可未被覆。又,連接端子22a,22b的材質、供電構件51a,51b的金屬絲線材質,係與內周電阻發熱體21同樣。
外周電阻發熱體24係從其中一端部24a,依一筆畫要領在複數返折部返折且幾乎遍佈內周區Z2全域的軌跡,形成至另一端部24b。端部24a,24b係設置於筒狀軸40之外向凸緣46的相對向位置處。端部24a係經由圓柱狀連接端子25a連接於供電構件54a,端部24b係經由圓柱狀連接端子25b,連接於供電構件54b。連接端子25a,25b的下端面係與平板20的下面20b呈同平面。供電構件54a,54b係朝上下方向貫穿筒狀軸40的周壁部,並電氣式耦接於外周電阻發熱體24的端部24a,24b。供電構件54a,54b係以例如鎢、鉬為主成分的金屬絲線,埋設於筒狀軸40的周壁部,且密接於筒狀軸40的陶瓷材料。具體而言,供電構件54a,54b係從筒狀軸40的下端通過小徑部42的周壁部與擴徑部44的周壁部,露出於外向凸緣46的上端面。供電構件54a,54b係連接於未圖示的第2外部電源(不同於第1外部電源的電源)。所以,外周電阻發熱體24被從第2外部電源,經由供電構件54a,54b與連接端子25a,25b供應電力。連接端子25a,25b的材質係與外周電阻發熱體24同樣。
其次,針對陶瓷加熱器10的使用例進行說明。首先,在未圖示真空腔內設置陶瓷加熱器10,在該陶瓷加熱器10的晶圓載置面20a上載置晶圓W。然後,依由未圖示內周熱電偶所檢測到的內周區Z1溫度,成為預定內周目標溫度之方式,利用第1外部電源調整供應給內周電阻發熱體21的電力。在此之同時,亦依由未圖示外周熱電偶所檢測到的外周區Z2溫度,成為預定外周目標溫度之方式,利用第2外部電源調整供應給外周電阻發熱體24的電力。藉此,晶圓W的溫度被控制為所需溫度。然後,將真空腔內設定為真空環境或減壓環境,使真空腔內產生電漿,再利用該電漿對晶圓W施行CVD成膜、或施行蝕刻。
其次,針對陶瓷加熱器10的製造例進行說明。該製造例係包括有:(a)筒狀成形體66之製作步驟、(b)筒狀軸40之製作步驟、(c)平板20之製作步驟、以及(d)平板20與筒狀軸40之接合步驟。圖3所示係筒狀軸40的製造步驟圖(包括筒狀成形體66的製作步驟),圖4所示係平板20的製造步驟圖,圖5所示係平板20與筒狀軸40的接合步驟說明圖。
・步驟(a) 製作筒狀成形體66。首先,利用模鑄成形製成供製作筒狀軸40內壁用的第1成形體62,在第1成形體62的外面設置2條供配置供電構件54a,54b用的溝62a,62b(圖3(A)參照)。所謂「模鑄成形」亦為通稱「鑄膠成形」的方法,詳細如日本專利第5458050號公報等所揭示。模鑄成形時,朝具備有與第1成形體62相同形狀內部空間的第1成形模,流入含有:陶瓷粉體、溶劑、分散劑及膠化劑的陶瓷漿料,使膠化劑產生化學反應而使陶瓷漿料凝膠化後,再施行脫模,獲得第1成形體62。溶劑係在能溶解分散劑與膠化劑之前提下,其餘並無特別的限定,較佳係使用例如:多元酸酯(例如戊二酸二甲酯等)、多元醇的酸酯(例如甘油三乙酸酯等)等具有2以上酯鍵的溶劑。分散劑係在能使陶瓷粉體均勻分散於溶劑中之前提下,其餘並無特別的限定,較佳係使用聚羧酸系共聚合體、聚羧酸鹽等。膠化劑亦可含有例如:異氰酸酯類、多元醇類及觸媒。其中,異氰酸酯類係在官能基具有異氰酸酯基之物質前提下,其餘並無特別的限定,可例如:二異氰酸甲苯酯(TDI)、二苯甲烷二異氰酸酯(MDI)或該等的改質體等。多元醇類係在具有2以上能與異氰酸酯基產生反應之羥基的物質前提下,其餘並無特別的限定,可例如:乙二醇(EG)、聚乙二醇(PEG)、丙二醇(PG)、聚丙二醇(PPG)等。觸媒係在能促進異氰酸酯類與多元醇類之胺酯反應的物質前提下,其餘並無特別的限定,可例如:三伸乙二胺、己二胺、6-二甲胺基-1-己醇等。此處所謂「凝膠化反應」係指由異氰酸酯類與多元醇類產生胺酯反應成為胺酯樹脂(聚胺酯)的反應。利用膠化劑的反應,陶瓷漿料呈凝膠化,胺酯樹脂具有有機黏結劑的機能。
接著,在第1成形體62的溝62a,62b中,嵌入經預先加工成圖2所示形狀的供電構件54a,54b(參照圖3(B))。藉此,供電構件54a,54b便形成在第1成形體62外面循上下方向的狀態。
接著,在第1成形體62的外面,利用模鑄成形製成供製作筒狀軸40外壁用的第2成形體64,獲得筒狀成形體66(參照圖3(C))。此處,在具備有與筒狀成形體66相同形狀內部空間的成形模中,放入第1成形體62後,於剩餘的內部空間中流入與先前同樣的陶瓷漿料,使膠化劑進行化學反應而使陶瓷漿料呈凝膠化後,施行脫模,獲得筒狀成形體66。筒狀成形體66係在第1成形體62外側形成第2成形體64。供電構件54a,54b並未露出於筒狀成形體66的上端與下端,而是埋沒於筒狀成形體66中。
・步驟(b) 筒狀成形體66經乾燥、脫脂後,施行煅燒,獲得筒狀煅燒體68(參照圖3(D))。乾燥係為使筒狀成形體66中所含的溶劑蒸發而實施。乾燥溫度與乾燥時間係只要配合所使用溶劑再行適當設定便可。但,乾燥溫度必需注意設定為乾燥中的筒狀成形體66不會出現龜裂。乾燥後的脫脂係為將筒狀成形體66中所含分散劑、觸媒等有機物予以分解・除去而實施。脫脂溫度係只要配合所含有機物的種類再行適當設定便可,例如亦可設定為400~600℃。脫脂後的煅燒係為將筒狀成形體66中所含陶瓷粒子燒結而實施。煅燒溫度只要依照陶瓷粉末的種類、粒徑等再行適當設定便可,較佳係設定於1000~2000℃範圍內。另外,環境係只要從大氣環境、惰性環境、真空環境之中,配合陶瓷粉末的種類再行適當選擇。例如當陶瓷粉末係氮化鋁粉末的情況,最好在惰性環境中施行乾燥、脫脂、煅燒。接著,將筒狀煅燒體68的上端與下端施行研削,使供電構件54a,54b的上端與下端露出,獲得筒狀軸40(參照圖3(E))。依此因為利用模鑄成形在筒狀成形體66中埋設供電構件54a,54b後,再施行煅燒而獲得筒狀軸40,因而供電構件54a,54b會與筒狀軸40的陶瓷材料密接。
・步驟(c) 依圖4(A)~(E)的順序製作平板20。首先,利用模鑄成形製成為製作平板20屬於晶圓載置面20a部分用的圓盤狀第1成形體72(參照圖4(A))。此處,在具備與第1成形體72相同形狀內部空間的成形模中,流入與步驟(a)同樣的陶瓷漿料,使膠化劑進行化學反應,而使陶瓷漿料呈凝膠化後,施行脫模,獲得第1成形體72。
接著,在第1成形體72的表面上配置內周電阻發熱體21與外周電阻發熱體24,在內周電阻發熱體21的二端21a,21b分別配置連接端子22a,22b,並於外周電阻發熱體24的二端24a,24b分別配置連接端子25a,25b(參照圖4(B))。
接著,在第1成形體72的表面上,利用模鑄成形製成供製作平板20屬於接合面部分用的圓盤狀第2成形體74,獲得圓盤狀成形體76(參照圖4(C))。此處,在具備與圓盤狀成形體76相同形狀內部空間的成形模中,放入圖4(B)的第1成形體72後,再於剩餘的內部空間中流入與先前同樣的陶瓷漿料。然後,使膠化劑進行化學反應,而使陶瓷漿料呈凝膠化,經脫模,獲得圓盤狀成形體76。圓盤狀成形體76係在第1成形體72的表面上積層第2成形體74,且內建有內周與外周電阻發熱體21,24、連接端子22a,22b,25a,25b。
接著,圓盤狀成形體76經乾燥、脫脂後,施行煅燒,獲得圓盤狀煅燒體78(參照圖4(D))。乾燥、脫脂及煅燒係依照與由筒狀成形體66獲得筒狀煅燒體68時同樣地實施。接著,藉由研削圓盤狀煅燒體78的表面使連接端子25a,25b露出,獲得平板20(參照圖4(E))。此階段,連接端子22a,22b係維持埋設於平板20的狀態。
・步驟(d) 將步驟(c)所獲得平板20、與步驟(b)所獲得筒狀軸40予以接合。首先,如圖5(A)所示,在露出於平板20表面的連接端子25a,25b上塗佈當作金屬接合材用的金屬膏34,再於所塗佈金屬膏34的周圍塗佈陶瓷接合材35。金屬膏34所含的金屬係可使用與內周及外周電阻發熱體21,24相同物。陶瓷接合材35係可例如固相接合時所使用的接合助劑溶液(例如硝酸釔水溶液等)。
接著,如圖5(B)所示,依平板20與筒狀軸40同軸的方式,使筒狀軸40載置於平板20上。此時,使供電構件54a,54b中露出於外向凸緣46端面的部分接觸於金屬膏34。又,使外向凸緣46的端面接觸於陶瓷接合材35。藉此,形成在供電構件54a,54b的端部與連接端子25a,25b之間配置金屬膏34,在筒狀軸40的端面與平板20表面之間配置陶瓷接合材35的狀態。然後,在筒狀軸40中插入加壓筒80,使加壓筒80載置於筒狀軸40的外向凸緣46上,更在加壓筒80上載置錘82。將其設置於未圖示加熱爐內,於惰性氣體環境下,升溫至既定高溫(例如1800~2000℃),在該溫度下維持既定時間後便降溫。藉此,因為筒狀軸40的外向凸緣46在利用錘82被按押於平板20的狀態下加熱,因而外向凸緣46與平板20的陶瓷間便進行固相接合。又,露出於外向凸緣46端面的供電構件54a,54b利用由金屬膏34固化生成金屬層,接合於連接端子25a,25b。
然後,在平板20表面中,相對向於連接端子22a,22b的位置處開設圓孔23a,23b,使圓孔23a,23b底面露出連接端子22a,22b的端面。對該連接端子22a,22b,經由蠟材等電氣式耦接供電構件51a,51b,獲得圖2的陶瓷加熱器10。
由以上所說明本實施形態的陶瓷加熱器10,供電構件54a,54b被埋設於筒狀軸40的周壁部,並與筒狀軸40的陶瓷材料密接。所以,即便對供電構件54a,54b作用應力,但供電構件54a,54b仍不會在筒狀軸40周壁部內搖擺晃動,俾確保供電構件54a,54b與外周電阻發熱體24的接合。
再者,筒狀軸40係上端具有外向凸緣46,供電構件54a,54b係透過外向凸緣46電氣式耦接於外周電阻發熱體24。所以,在陶瓷加熱器10製造時,若將筒狀軸40的外向凸緣46壓抵於平板20,在此之同時,供電構件54a,54b亦會被壓抵於外周電阻發熱體24的連接端子25a,25b。所以,可在確保供電構件54a,54b與連接端子25a,25b導通狀態下,將筒狀軸40與平板20予以接合。
再者,因筒狀軸40係從下端起至既定高度處呈小徑部42,且從既定高度起至上端呈較小徑部42更大徑的擴徑部44,因而相較於直線形狀筒狀軸之下,從上端起至下端的距離拉長,平板20的熱較不易傳導至筒狀軸40的下端。所以,當筒狀軸40下端經由未圖示O形環連接於其他構件的情況,可防止O形環因熱而劣化的情形。
再者,在平板20的內周區Z1配置內周電阻發熱體21,並在平板20的外周區Z2配置外周電阻發熱體24,而埋設於筒狀軸40周壁部的供電構件54a,54b,則與外周電阻發熱體24電氣式耦接。即,連接於外周電阻發熱體24的供電構件54a,54b並未被配置於筒狀軸40的內部空間。所以,可將筒狀軸40的內部空間利用其他目的。上述實施形態,將筒狀軸40的內部空間利用於供配置連接於內周電阻發熱體21的供電構件51a,51b用。
再者,連接端子22a,22b的端面係位於在平板20下面所設置圓孔23a,23b的底面,此種構造適合採取當筒狀軸40與平板20予以接合之際,在連接端子22a,22b埋設於平板20的狀態下,接合後在平板20的下面20b設置圓孔23a,23b,使圓孔23a,23b底面露出連接端子22a,22b的製法。依此,在筒狀軸40與平板20接合時可防止連接端子22a,22b變質。
再者,上述製造例,因為在筒狀軸40中不需要開設為插通供電構件54a,54b用的貫穿孔,在筒狀軸40與平板20接合之同時,亦進行供電構件54a,54b與連接端子25a,25b的接合,因而製造作業效率獲大幅改善。
另外,本發明並不僅侷限於上述實施形態,當然在本發明技術範圍前提下,亦可依各種態樣實施。
例如上述實施形態,圖2的筒狀軸40係從下端起至既定高度處呈小徑部42,且從既定高度起至上端呈較小徑部42更大徑的擴徑部44。因而,即便將外周區Z2分割為複數小區,且依每個小區設置外周電阻發熱體,仍可輕易將供電構件連接於外周電阻發熱體。例如當具有擴徑部44的筒狀軸40、與直線形狀筒狀軸,將同數量供電構件埋設於筒狀軸的周壁部時,在筒狀軸上端露出的供電構件間之間隔,容易形成前者較後者更寬狀態。所以,外周電阻發熱體的端子間距離亦可擴大,便可較輕易地將供電構件連接於外周電阻發熱體。另外,供電構件必需依每個外周電阻發熱體呈1配對。
上述實施形態係埋設於筒狀軸40中的供電構件54a,54b形成通過外向凸緣46狀態,但亦可如圖6所示形成未通過外向凸緣46狀態。又,亦可供電構件54a,54b其中一者通過外向凸緣46,但另一者則未通過外向凸緣46。
上述實施形態,針對平板20與筒狀軸40進行固相接合之情況說明,但亦可依固相接合以外的方法接合,例如亦可採用TCB接合(Thermal compression bonding,熱壓接合)。TCB接合的詳細內容係例如日本專利第5008875號等所詳述。
上述實施形態中,若陶瓷加熱器10的供電構件54a,54b、與連接端子25a,25b未導通,亦可外向凸緣46中在朝向未從下面導通地方開設孔,再於該孔中注入蠟材而確保導通後,熔射陶瓷粉末而封閉孔。
上述實施形態例示設有小徑部42與擴徑部44的筒狀軸40,但筒狀軸40亦可呈直線形狀。
上述實施形態係例示在平板20中內建內周與外周電阻發熱體21,24的情況,但在平板20中亦可內建静電電極或RF電極。静電電極係為使晶圓吸附於晶圓載置面20a而使用的電極,RF電極係為使產生電漿而使用的電極。
本申請案係以2019年3月18日所提出申請的日本專利申請案第2019-050231號為優先權基礎,援引其內容並融入於本說明書中。 [產業上之可利用性]
本發明係可利用於例如半導體製造裝置。
10:陶瓷加熱器 20:平板 20a:晶圓載置面 20b:下面 20c:假想邊界 21:內周電阻發熱體 21a,21b:端部 22a,22b:連接端子 23a,23b:圓孔 24:外周電阻發熱體 24a,24b:端部 25a,25b:連接端子 34:金屬膏 35:陶瓷接合材 40:筒狀軸 42:小徑部 44:擴徑部 46:外向凸緣 51a,51b:供電構件 54a,54b:供電構件 62:第1成形體 62a,62b:溝 64:第2成形體 66:筒狀成形體 68:筒狀煅燒體 72:第1成形體 74:第2成形體 76:圓盤狀成形體 78:圓盤狀煅燒體 80:加壓筒 82:錘 W:晶圓 Z1:內周區 Z2:外周區
圖1係陶瓷加熱器10的立體示意圖;圖2係圖1中的A-A剖視圖;圖3係筒狀軸40的製造步驟圖;圖4係平板20的製造步驟圖;圖5係平板20與筒狀軸40的接合步驟說明圖;以及圖6係陶瓷加熱器10另一例剖視圖。
10:陶瓷加熱器
20:平板
20a:晶圓載置面
20b:下面
21:內周電阻發熱體
21a,21b:端部
22a,22b:連接端子
23a,23b:圓孔
24:外周電阻發熱體
24a,24b:端部
25a,25b:連接端子
40:筒狀軸
42:小徑部
44:擴徑部
46:外向凸緣
51a,51b:供電構件
54a,54b:供電構件
W:晶圓
Z1:內周區
Z2:外周區

Claims (9)

  1. 一種陶瓷加熱器,係具備有:陶瓷製平板,其係上面設有晶圓載置面、且內部埋設電阻發熱體,並且埋設有連接端子;陶瓷製筒狀軸,其係上端接合於上述平板的下面;以及供電構件,其係朝上下方向貫穿上述筒狀軸的周壁部,且與上述電阻發熱體電氣式耦接;其中,上述供電構件係埋設於上述筒狀軸的周壁部,且與上述筒狀軸的陶瓷材料密接,上述筒狀軸係與上述平板為不同元件,且上端具有外向凸緣;上述供電構件係通過上述外向凸緣,經由上述連接端子電氣式耦接於上述電阻發熱體,其中上述連接端子的端面與平板接合面實質上齊平,且露出於上述平板接合面,上述平板接合面係用於與上述筒狀軸接合的面,上述筒狀軸的上述外向凸緣與上述平板固相接合,上述供電構件透過金屬層接合至上述連接端子。
  2. 如請求項1之陶瓷加熱器,其中,上述筒狀軸係從下端起至既定高度處呈小徑部,從上述既定高度起至上述上端呈直徑較大於上述小徑部的擴徑部。
  3. 如請求項1或2之陶瓷加熱器,其中,上述平板係具備有:配置於上述平板內周區的內周電阻發熱體、以及配置於上述平板外周區且當作上述電阻發熱體用的外周電阻發熱體。
  4. 如請求項3之陶瓷加熱器,其中,上述內周電阻發熱體係經由內周連接端子,電氣式耦接於在筒狀軸內部空間配置的供電構件; 上述內周連接端子的端面係位於在上述平板下面所設置孔的底面。
  5. 一種陶瓷加熱器之製法,係包括有:(a)在供製作陶瓷製筒狀軸內壁用的第1模鑄成形體外面,朝上下方向狀態配置供電構件,並將供製作上述筒狀軸外壁用的第2模鑄成形體,配置於上述第1模鑄成形體的外面,而獲得筒狀成形體的步驟;(b)藉由將上述筒狀成形體施行煅燒,而獲得上述筒狀軸的步驟;(c)準備埋設有電阻發熱體的陶瓷製平板,且分別接觸於上述電阻發熱體二端的連接端子,露出於上述平板的接合面者的步驟;以及(d)使上述供電構件露出於上述筒狀軸的接合面,在上述供電構件與上述平板的上述連接端子之間配置金屬接合材,且在上述筒狀軸的接合面與上述平板的接合面之間配置陶瓷接合材狀態下,將上述筒狀軸按押於上述平板上施行加熱,藉此將上述平板與上述筒狀軸予以接合的步驟。
  6. 如請求項5之陶瓷加熱器之製法,其中,上述步驟(a)中,上述筒狀成形體係依具有外向凸緣,且使上述供電構件呈通過上述外向凸緣狀態的方式製作;上述步驟(d)中,使上述供電構件露出於上述筒狀軸的上述外向凸緣端面,在上述供電構件與上述連接端子之間配置上述金屬接合材,且在上述外向凸緣端面與上述平板接合面之間配置上述陶瓷接合材狀態下,將上述外向凸緣按押於上述平板進行加熱,藉此將上述平板與上述筒狀軸進行接合。
  7. 如請求項5或6之陶瓷加熱器之製法,其中,上述筒狀軸係從上述筒狀軸接合面的背後端面起至既定高度呈小徑部,從上述既定高度起至上述接合面呈直徑較大於上述小徑部的擴徑部。
  8. 如請求項5或6之陶瓷加熱器之製法,其中,上述步驟(c)中,上述平板係準備:在上述平板內周區設有內周電阻發熱體,且在上述平板外周區 設有當作上述電阻發熱體用的外周電阻發熱體者。
  9. 如請求項8之陶瓷加熱器之製法,其中,上述內周電阻發熱體係經由內周連接端子,電氣式耦接於在上述筒狀軸內部空間所配置的供電構件;上述步驟(d)中,當將上述平板與上述筒狀軸進行接合時,上述內周連接端子不會露出於上述平板而呈被埋設於上述平板中的狀態,在上述平板與上述筒狀軸進行接合後,亦可在上述平板中設置孔,使上述內周連接端子的端面露出於上述孔的底面。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200725796A (en) * 2005-08-09 2007-07-01 Shinetsu Chemical Co Heating element
TW201143553A (en) * 2009-11-24 2011-12-01 Tokyo Electron Ltd Plasma processing apparatus
TW201515145A (zh) * 2013-09-16 2015-04-16 Applied Materials Inc 具有溫度分佈控制的基板支架
US20180204754A1 (en) * 2016-03-07 2018-07-19 Ngk Spark Plug Co., Ltd. Substrate supporting device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1460094A (zh) * 2001-04-12 2003-12-03 揖斐电株式会社 陶瓷接合体、其制造方法以及半导体晶片用陶瓷结构体
JP5087416B2 (ja) * 2008-01-24 2012-12-05 日本碍子株式会社 セラミックスヒータ及びその製造方法
TWI501339B (zh) * 2010-09-24 2015-09-21 Ngk Insulators Ltd Semiconductor manufacturing device components
JP6697363B2 (ja) * 2015-10-30 2020-05-20 日本碍子株式会社 半導体製造装置用部材、その製法及びシャフト付きヒータ
JP6618409B2 (ja) * 2016-03-31 2019-12-11 日本特殊陶業株式会社 基板保持装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200725796A (en) * 2005-08-09 2007-07-01 Shinetsu Chemical Co Heating element
TW201143553A (en) * 2009-11-24 2011-12-01 Tokyo Electron Ltd Plasma processing apparatus
TW201515145A (zh) * 2013-09-16 2015-04-16 Applied Materials Inc 具有溫度分佈控制的基板支架
US20180204754A1 (en) * 2016-03-07 2018-07-19 Ngk Spark Plug Co., Ltd. Substrate supporting device

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