TWI726253B - 半導體製造裝置用構件、其製法及成形模具 - Google Patents

半導體製造裝置用構件、其製法及成形模具 Download PDF

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TWI726253B
TWI726253B TW107138748A TW107138748A TWI726253B TW I726253 B TWI726253 B TW I726253B TW 107138748 A TW107138748 A TW 107138748A TW 107138748 A TW107138748 A TW 107138748A TW I726253 B TWI726253 B TW I726253B
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disc
shaft
unfired
ceramic
forming
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TW107138748A
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TW201922676A (zh
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曻和宏
木村拓二
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日商日本碍子股份有限公司
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Abstract

本發明的半導體製造裝置用構件，包括內建電極的陶瓷製圓板及支持上述圓板的陶瓷製的軸，圓板與軸以沒有接合界面的狀態一體化。

Description

半導體製造裝置用構件、其製法及成形模具
本發明係關於半導體製造裝置用構件、其製法及成形模具。
先前已知包括內建電極的陶瓷製圓板，及支持該圓板的陶瓷製的軸的陶瓷加熱器等的半導體製造裝置用構件。在製造如此的半導體製造裝置用構件，已知例如專利文獻1記載，分別各個燒製製作圓板及軸之後，以二者接觸的狀態熱處理進行接合的。 ［先前技術文獻］ ［專利文獻］
專利文獻1：日本特開2006-232576號公報
但是，為將一旦燒製的圓板或軸接合而熱處理，則會受到2次熱履歷，使燒結粒子成長，而有使圓板或軸的強度變弱，或偶爾有發生接合界面的剝離等的問題。
本發明係為解決如此的課題所完成，以提高半導體製造裝置用構件的強度的同時不會發生圓板或軸的剝離的為主要目標。
本發明的半導體製造裝置用構件，其係包括：內建電極的陶瓷製圓板及支持上述圓板的陶瓷製的軸的半導體製造裝置用構件，上述圓板與上述軸，以沒有接合界面的狀態一體化。
在該半導體製造裝置用構件，圓板與軸，由於以沒有接合界面的狀態一體化，故並不會發生接合界面的剝離。此外，如此的半導體製造裝置用構件，由於可僅以1次的燒成(1次熱履歷)製作圓板與軸的一體成形體，故與對圓板與軸施加2次熱履歷的情形相比，可抑制一燒結粒子的成長，進而提高強度。
在本發明的半導體製造裝置用構件，上述電極，可為加熱器電極、RF電極及靜電電極的至少一種。如此的電極，與圓板的板面平行為佳。
在本發明的半導體製造裝置用構件，上述圓板，具有在上述圓板的側面開口沿著上述圓板的板面方向設置的氣體通道，上述軸，亦可具有在上下方向上延伸對上述氣體通道供給氣體的氣體供給路。藉由使氣體經由氣體供給路從氣體通道的開口向圓板的側面噴出，可防止在圓板的下面附著堆積物。
在本發明的半導體製造裝置用構件，上述軸的外面與上述圓板之中上述軸被一體化的面的邊界部，亦可為R面或錐度面。如此可緩和施加在邊界部的應力。
在本發明的半導體製造裝置用構件，上述軸是圓筒構件，上述軸的內面與上述圓板之中，上述軸被一體化的面的邊界部，可為R面或錐度面。如此，亦可緩和施加在邊界部的應力。
本發明的成形模具，係用於製造上述半導體製造裝置用構件的成形模具，其包括：用於形成上述圓板之中軸側的圓板下層的空間的圓板成形部；及用於形成連通上述圓板成形部的上述軸的空間的軸成形部。
在該成形模具，圓板成形部與軸成形部連通。因此，將含有陶瓷原料粉末與成形化劑的陶瓷漿料注入成形模具內，則陶瓷漿料會填充在圓板成形部及軸成形部的雙方。之後，在成形模具內使成形化劑化學反應將陶瓷漿料成形化，可得以圓板成形部成形的未燒製圓板下層與以軸成形部成形的未燒製軸以沒有接縫的狀態一體化的基礎成形體。將該基礎成形體燒成，則可藉由1次的燒製得到半導體製造裝置用構件。再者，基礎成形體的未燒製圓板下層，亦有進一步層積電極(或電極前驅物)或圓板成形體再燒製的情形，但此時亦係藉由1次燒製得到半導體製造裝置用構件。
在本發明的成形模具，圓板成形部與軸成形部的邊界部，亦可為R面或錐度面。
在本發明的成形模具，上述圓板成形部，係以連接一對圓形面與該一對圓形面的外周面包圍的空間，上述一對圓形面當中的上述軸成形部側的圓形面，係向上述軸成形部側凹陷的凹面，上述一對圓形面中與上述軸成形部相反側的圓形面，可為向上述軸成形部鼓起的凸面。如此，將未燒製圓板下層與未燒製軸以沒有接縫的狀態一體化的基礎成形體，以未燒製軸為下，未燒製圓板下層朝上的姿勢支持時，未燒製圓板下層會成為外周緣較中心部向上彎的形狀。燒製該基礎成形體時，只要以未燒製軸為上，以未燒製圓板下層朝下的姿勢支持燒製，則燒製後的圓板下層，可成為大致平坦的平面。上述凹面及上 述凸面，由於中心位置與從該中心位置向半徑外方向離150mm的位置的高低差d為0.7mm以上2.6mm以下，或者上述凹面及上述凸面的傾斜角度θ以0.25°≦θ≦1°。如此則燒製後的圓板下層會成為更平坦的平面。再者，亦有在基礎成形體的未燒製圓板下層進一步層積電極(或電極前驅物)或圓板成形體再燒製的情形，但此時，燒製後的圓板下層、電極及圓板會成為平坦的平面。
在本發明的成形模具，上述凹面，係對上述軸成形部側以圓錐狀或圓錐台狀凹陷的面，上述凸面係對上述軸成形部側以圓錐狀或圓錐台狀鼓起的面。或者，上述凹面及上述凸面，亦可為彎曲面。
本發明的半導體製造裝置用構件的製法，包含：(a)使用上述成形模具，以模鑄法製作藉由上述圓板成形部成形的未燒製圓板下層與藉由上述軸成形部成形的未燒製軸，以沒有接縫的狀態一體化的基礎成形體的步驟；(b)在上述基礎成形體的上述未燒製圓板下層的上面，層積與上述未燒製圓板下層平行的電極或形成其前驅物的未燒製圓板上層得到最終成形體的步驟；及(c)將上述最終成形體煆燒之後，藉由使上述未燒製圓板上層為下，上述未燒製軸朝上載置在水平支持面的狀態燒製，得到圓板與軸以沒有接合界面的狀態一體化的半導體製造裝置用構件的步驟。
根據該半導體製造裝置用構件的製法，可得圓板與軸以沒有接合界面的狀態一體化的半導體製造裝置用構件。如此的半導體製造裝置用構件，由於可將最終成形體僅以1次燒製(1次熱履歷)製作，故與2次燒製圓板與軸的情形相比，可抑制燒結粒子的成長，進而可提高強度。
在此，所謂「模鑄法」，係指將含有陶瓷原料粉末與成形化劑的陶瓷漿料注入成形模具內，使該成形化劑在成形模具內化學反應，將陶瓷漿料成形化而得到成形體的方法。所謂成形化劑，可例如為，包含異氰酸酯及多元醇，藉由尿烷反應成形化的。所謂「電極的前驅物」，係指藉由燒製成為電極的，例如指將電極糊料塗佈或印刷成電極的形狀的層等。
在本發明的半導體製造裝置用構件的製法，作為成形模具，使用成為圓板成形部的一對圓形面使用上述凹面與凸面時，將未燒製圓板下層與未燒製軸以沒有接縫的狀態一體化的基礎成形體，以未燒製軸為下，未燒製圓板下層朝上的姿勢支持時，圓板下層會成為外周緣較中心部向上彎曲的形狀。在燒製步驟，只要將最終成形體以未燒製軸朝上支持燒製，則燒製後的圓板會成為大致平坦的平面。此外，在模鑄法，成形化劑在成形模具內化學反應時有時會產生氣體，但該氣體容易沿著凹面向外部排放。因此，基礎成形體幾乎沒有氣泡殘留。特別是使凹面及凸面的各個高低差d在0.7mm以上2.6mm以下時，或者使傾斜角度θ為0.25∘≦θ≦1∘時，由於燒製後的圓板下層可成為更平坦的平面而佳。
在本發明的半導體製造裝置用構件的製法，在上述步驟（a），將上述基礎成形體以模鑄法製作時，在上述未燒製圓板下層的上面形成在側面開口的氣體通道，在上述步驟（b），可在上述氣體通道上，將上述未燒製圓板上層接著得到最終成形體。如此，可得具有在圓板的側面開口沿著圓板的板面方向設置氣體通道的半導體製造裝置用構件。
在本發明的半導體製造裝置用構件的製法，在上述步驟（c），亦可在煆燒後的上述最終成形體的上述未燒製圓板下層，以放重錘的狀態燒製。如此，燒製後所得的陶瓷加熱器的圓板可更平坦的同時，可更加抑制變形。
將本發明的較佳的實施形態邊參照圖面說明如下。圖1係陶瓷加熱器10的立體圖，圖2係圖1的A-A剖面圖。
陶瓷加熱器10，係如圖1所示，係半導體製造裝置用構件的一種，將以同樣的陶瓷材料組成的圓板12與軸20以沒有接合界面的狀態一體化的。
圓板12係如圖2所示，內建加熱器電極14及RF電極16。圓板12的上面係晶圓載置面12a，載置施以電漿處理的矽製晶圓。加熱器電極14及RF電極16，與晶圓載置面12a大致平行。加熱器電極14，係例如將導電性的線圈將圓板的全面以一筆畫的要領配線。在該加熱器電極14，分別連接加熱器端子棒（無圖示），藉由該加熱器端子棒施加電壓而發熱。RF電極16係較圓板12稍小的圓形的薄層電極，例如以細的金屬線網狀編織成板片狀的網目所形成。該RF電極16，係埋設在圓板12之中的加熱器電極14與晶圓載置面12a之間。在RF電極16，連接供電棒（無圖示），藉由該供電棒施加交流高頻波電壓。再者，加熱器電極14或RF電極16的材質，考慮防止在製造時在圓板12發生龜裂，以熱膨脹係數與圓板12的陶瓷材料接近的為佳。
軸20，係在圓板12的下面以沒有接合界面的狀態一體化，支持圓板12。
接著，說明關於陶瓷加熱器10的使用例。在未示於圖示的腔體內配置陶瓷加熱器10，將晶圓載置在晶圓載置面12a。然後，藉由在RF電極16施加交流高頻波電壓，在埋設在腔體內上方的未示於圖的對向水平電極及埋設在圓板12的RF電極16所組成的平行平板電極之間發生電漿，利用該電漿對晶圓施以CVD成膜或進行蝕刻。此外，基於未示於圖的熱電偶的感測信號求晶圓的溫度，對加熱器電極14施加電壓將其溫度控制到設定溫度（例如350℃或300℃）。
接著，說明關於陶瓷加熱器10的製造例。圖3係基礎成形體30的縱剖面圖、圖4係成形模具40的縱剖面圖、圖5係製作到最終成形體50的成形步驟圖、圖6係燒製煆燒體60得到陶瓷加熱器10的燒製步驟圖。
1.成形步驟 首先，製作使用於製造陶瓷加熱器10的基礎成形體30。基礎成形體30，係如圖3所示，將未燒製圓板下層32與未燒製軸34以沒有接縫的狀態一體成形的。未燒製圓板下層32，係相當於圓板12之中較加熱器電極14的上面靠軸側的圓板下層12b（參照圖2）的成形體，未燒製軸34係相當於軸20的成形體。在未燒製圓板下層32的上面，形成有用於嵌入加熱器電極14的加熱器電極用溝33。未燒製圓板下層32，呈外周緣較中心部向上彎曲的形狀。具體而言，未燒製圓板下層32的上面係呈向未燒製軸34圓錐狀凹陷的凹面，下面係向未燒製軸34圓錐狀鼓起的凸面。分別在未燒製圓板下層32的上下面，中心位置與從該中心位置向半徑外方向離150mm的位置的高低差d在0.7mm以上2.6mm以下，或者，連接中心部與外周緣的線段與水平面所形成的傾斜角度θ呈0.25∘以上1∘以下的範圍內的既定角度為佳。
在製作基礎成形體30，準備用於成形基礎成形體30的成形模具40。成形模具40，係如圖4所示，係以模具本體41、第1蓋42、底板43、及圓柱體44所構成。成形模具40的內部空間，係以圓板成形部45及軸成形部46構成。模型主體41，係取形基礎成形體30的外周面的部分，第1蓋42係取形基礎成形體30的未燒製圓板下層32的上面的部分，底板43係取形基礎成形體30的未燒製軸34的下面的部分，圓柱體44係取形未燒製軸34的中空部分的部分。此外，由於圓板成形部45，係用於成形未燒製圓板下層32的空間，亦可說是用於形成圓板下層12b的空間。該圓板成形部45，係一對圓形面45a、45b與連接該一對圓形面45a、45b的外周面45c所包圍的空間。一對圓形面45a、45b之中，軸成形部46側的圓形面45a，係向軸成形部46側凹陷的凹面。此外，與軸成形部46的相反側的圓形面45b，係向軸成形部46側鼓起的凸面。凹面的圓形面45a及凸面的圓形面45b，其中心位置與從其中心位置在半徑外方向離150mm的位置的高低差d，以0.7mm以上2.6mm以下為佳。此外，圓形面45a及圓形面45b的傾斜角度θ，以0.25∘≦θ≦1∘。在以下表1表示傾斜角度θ與高低差d的關係的一例。圓形面45b，係可形成基礎成形體30的未燒製圓板下層32的加熱器電極用溝33的形狀。在成形模具40，漿料的注入口40a係設於圓板成形部45的外周面45c，排放口40b係設於軸成形部46的底板43。再者，凹面的圓形面45a，可為圓錐狀或圓錐台狀凹陷的面，亦可為凹狀的彎曲面。又，凸面的圓形面45b，可為圓錐狀或圓錐台狀鼓起的面，亦可為凸狀彎曲的面。
[表1]
Figure 107138748-A0304-0001
 *d係，圓形面的中心位置與從其中心位置在半徑外方向離150mm的位置的高低差d
將該成形模具40，如圖5（a）所示，以圓板成形部45為下，軸成形部46向上配置，將陶瓷漿料從注入口40a注入填充圓板成形部45及軸成形部46的全體，藉由使漿料硬化得到基礎成形體30。具體的步驟如下所示。
對陶瓷粉體，加入溶劑及分散劑混合，製作陶瓷漿料前驅物。使用於作為陶瓷粉體的陶瓷材料，可為氧化物系陶瓷，亦可為非氧化物系陶瓷。可使用例如，氧化鋁、三氧化二釔、氮化鋁、氮化矽、碳化矽、氧化釤、氧化鎂、氟化鎂、氧化鐿等。該等材料可以1種單獨，或組合2種以上使用。此外，只要可調製．製作漿料，陶瓷材料的粒徑，並無特別限定。溶劑，只要可溶解分散劑、異氰酸酯、多元醇及觸媒的，並無特別限定。可例示例如，碳化氫溶劑（甲苯、二甲苯、溶劑汽油腦等）、醚溶劑（乙二醇乙醚、丁基卡必醇、丁基卡必醇乙酸酯等）、醇溶劑（異丙醇、1-丁醇、乙醇、2-乙基己醇、松油醇、乙二醇、甘油等）、酮溶劑（丙酮、甲乙酮等）、酯（醋酸丁酯、戊二酸二甲酯、三乙酸甘油酯等）、多元酸溶劑（戊二酸等）。特別是使用多元酸酯（例如，戊二酸二甲酯等），多元醇的酸酯（例如，三乙酸甘油酯等）等的具有2個以上的酯鍵結的溶劑為佳。分散劑，例如，只要可將陶瓷粉體均勻地分散在溶劑的，並無特別限定。可例示例如，聚羧酸系共聚物、聚羧酸鹽、去水山梨醇脂肪酸酯、聚甘油脂肪酸酯、磷酸酯鹽系共聚物、磺酸鹽系共聚物、具有3級胺的聚氨基甲酸酯聚酯系共聚物等。特別是使用聚羧酸系共聚物、聚羧酸鹽等為佳。藉由添加該分散劑，可將成形前的漿料作成具有低黏度、且高流動性。如此，對陶瓷粉體，以既定比例添加溶劑、及分散劑，以既定時間將該等混合．解碎，而製作陶瓷漿料前驅物。
接著，對陶瓷漿料前驅物，添加成形化劑（異氰酸酯及多元醇）、觸媒，將該等混合．真空脫泡，製作陶瓷漿料。異氰酸酯，只要是具有異氰酸酯基作為官能基的物質，並無特別限定，可使用例如，六亞甲基異氰酸酯（HDI）、三異氰酸酯（TDI）、二苯甲烷二異氰酸酯（MDI），或該等的變性體等。再者，在分子內，亦可含有異氰酸酯基以外的反應性官能基，再者，亦可如聚異氰酸酯，含有多數反應官能基。多元醇，只要是具有可與異氰酸酯基反應的官能基，例如羥基、胺基等的物質，並無特別限定，可使用例如乙二醇（EG）、聚乙二醇（PEG）、丙二醇（PG）、聚丙二醇（PPG）、聚四亞甲基二醇（PTMG）、聚六亞甲基二醇(PHMG)、聚乙烯醇縮丁醛(PVB)等。觸媒，只要是可促進尿烷反應的物質，並無特別限定，可使用例如，三亞乙基二胺、己二胺、6-二甲基胺基-1-己醇、1,5-二氮雜二環[4.3.0]壬-5-烯、1,8-二氮雜二環[5.4.0]庚-7-烯、二甲基苄基胺、六甲基四乙烯四胺等。將陶瓷漿料，從成形模具40的注入口40a灌入填充圓板成形部45及軸成形部46。之後，藉由異氰酸酯及多元醇的化學反應(尿烷反應)生成作為有機膠合劑的尿烷樹脂，再者在鄰接的尿烷樹脂的分子之間，使同分子中分別生成的尿烷基(-O-CO-NH-)相互連接地架橋，使陶瓷漿料硬化。尿烷樹脂作用作為有機膠合劑。藉此，在成形模具40內製作基礎成形體30。
再者，製作陶瓷漿料前驅物與陶瓷漿料時的混合方法，並無特別限定，可例示例如球磨、自公轉式攪拌、振動式攪拌、螺旋槳式攪拌、靜態混合器等。基礎成形體30的大小，可考慮陶瓷加熱器10的大小及燒製時的收縮率而決定。此外，雖然成形化劑在成形模具40內化學反應時有時會發生氣體，但由於該氣體容易沿著傾斜角度θ的圓形面45a(凹面)向外部排出。因此，基礎成形體30並不會有氣泡殘留。
接著，將成形模具40翻過來取下第1蓋42，使基礎成形體30的未燒製圓板下層32的上面露出(參照圖5(b))，對加熱器電極用溝33嵌入線圈狀的加熱器電極14(參照圖5(c))。接著，裝上下面向下呈凸的第2蓋47，在未燒製圓板下層32的上方形成空間(參照圖5(d))。在該空間填充與先前同樣的陶瓷漿料，藉由化學反應使之硬化成形未燒製圓板中層35(參照圖5(e))。在未燒製圓板中層35的上面，形成RF電極用溝35a。接著，取下第2蓋47，使未燒製圓板中層35的上面露出(參照圖5(f))，在RF電極用溝35a配置網眼狀的RF電極16（參照圖5（g））。接著，裝上下面向下呈凸的第3蓋48，在RF電極16的上方形成空間（參照圖5（h））。在該空間填充與先前同樣的陶瓷漿料，藉由化學反應使之硬化成形未燒製圓板上層36（參照圖5（i））。接著，取下第3蓋48、底板43、及圓柱體44，將模具主體41分解，取出最終成形體50（參照圖5（j））。最終成形體50，係含有加熱器電極14及RF電極16的圓板部分與中空的軸部分，以沒有接縫的狀態一體成形，圓板部分的上面及下面外周緣較中心部向上彎曲的形狀。圓形面的中心位置與從該中心位置向半徑外方向離150mm的位置的高低差d，以0.7mm以上2.6mm以下為佳。此外，傾斜角度θ，以0.25∘以上1∘以下為佳。
2.乾燥．脫脂．煆燒步驟 （1）乾燥 使包含於最終成形體50中的分散劑蒸發。根據使用的分散劑的種類適宜調整乾燥溫度及乾燥時間即可。惟，乾燥溫度過高則由於會成為歸裂的原因而不佳。此外，氣氛以大氣、惰性氣氛、真空，氫氣氛均可。 （2）脫脂 使包含在分散劑蒸發後的最終成形體50的膠合劑、分散劑及觸媒分解。分解溫度，例如以400～600℃，氣氛以大氣、惰性氣氛、真空、氫氣氛均可，埋設電極時或使用非氧化物系陶瓷時，以惰性氣氛或真空的任一。 （3）煆燒 藉由對脫脂後的最終成形體50，以750～1300℃進行熱處理（煆燒）得到煆燒體60（參照圖6（a））。煆燒係為提高強度使之容易操作。氣氛，以大氣、惰性氣氛、真空、氫氣氛均可，埋設電極時或使用非氧化物系陶瓷時，係以惰性氣氛或真空之任一。煆燒體60，與最終成形體50同樣，含有加熱器電極14及RF電極16的圓板部分與中空的軸部分以沒有接縫的狀態一體成形，圓板部分係外周緣較中心部向上彎曲的形狀，傾斜角度θ呈0.25∘以上1∘以下。再者，亦可在乾燥後，同時進行脫脂與煆燒。
3.燒製步驟 將煆燒體60，以圓板部分為下，軸部分向上配置的狀態，將煆燒體60燒製得到陶瓷加熱器10。燒製時的最高溫度，可根據粉末的種類、粉末的粒徑適宜設定，惟以1000～2000℃的範圍設定為佳。煆燒體60之中外周緣較中心部向上彎曲的形狀的圓板部分會因燒製而變得大致平坦。氣氛，以大氣、惰性氣氛、真空均可。此外，為更加抑制燒製時的變形而使圓板部分作的更平，如圖6（a），將平坦的水平支持板70（例如以BN材組成的板），以煆燒體60的圓板部分為下，軸部分為上載置，將甜甜圈狀的重錘72放在圓板部分，以施加荷重的狀態常壓燒製為佳。藉此，可得圖6（b）表示陶瓷加熱器10。重錘72的重量過重，則有在加重的圓板部分與自由的軸部分之間發生收縮差而發生破裂之虞。因此，以5～10kg的範圍適宜設定為佳。重錘72，考慮安裝與拆卸，則以可沿著直徑分割成2個以上的形狀。
在以上詳述的本實施形態的陶瓷加熱器10，由於圓板12與軸20係以沒有接合界面的狀態一體化，並不會發生接合界面的剝離。此外，陶瓷加熱器10，由於可僅以1次燒製（1次熱履歷）製作煆燒體60，與對圓板12或軸20施加2次燒製圓板與軸的情形相比，可抑制燒結粒子的成長，進而可提高強度。
此外，成形模具40，圓板成形部45與軸成形部46有連通。因此，將陶瓷漿料注入成形模具40內，使成形化劑在成形模具40內化學反應，使漿料成形化，可得未燒製圓板下層32與未燒製軸34以沒有接縫的狀態一體化的基礎成形體30。對該基礎成形體30的未燒製圓板下層32，層積加熱器電極14、未燒製圓板中層35、RF電極16、及未燒製圓板上層36作成最終成形體50，再煆燒、燒製，故可以1次燒製得到陶瓷加熱器10。
再者，根據上述陶瓷加熱器10的製法，可容易得到圓板12與軸20以沒有接合界面的狀態一體化的陶瓷加熱器10。特別是，成形模具40，成圓板成形部45的一對圓形面45a、45b為上述凹面與凸面，將未燒製圓板下層32與未燒製軸34以沒有接縫的狀態一體化的基礎成形體30，以未燒製軸34為下，未燒製圓板下層32朝上的姿勢支持時，未燒製圓板下層32會成為外周緣較中心部向上彎曲的形狀。在燒製步驟，將煆燒體60以未燒製軸34為上支持燒製，則燒製後的圓板12會大致成為平坦的平面。此外，在模鑄法，雖然使成形化劑在成形模具40內化學反應時有時會發生氣體，但該氣體容易沿著凹面向外部排放。因此，在最終成形體50幾乎不會有氣泡殘留。特別是使凹面及凸面的各個高低差d在0.7mm以上2.6mm以下時，或者使傾斜角度θ為0.25∘≦θ≦1∘時，燒製後的圓板下層會成為更平坦的平面。
再者，在燒製步驟，由於係以對煆燒體60的圓板部分載置重鍾72的狀態常壓燒製，故圓板12可更加平坦的同時，可更加抑制變形。
再者，本發明並非限定於上述實施形態，只要屬於本發明的技術範圍，可以各種態樣實施，不言而喻。
例如，上述實施形態的陶瓷加熱器10的加熱器電極14之下，亦可如圖7及圖8所示，設置氣體通道18。將具有氣體通道18的陶瓷加熱器10稱為陶瓷加熱器110。圖7係陶瓷加熱器110的立體圖，圖8係圖7的B-B剖面圖。氣體通道18，係與圓板12的晶圓載置面12a平行的縱橫延長的通道，兩端係在陶瓷110的側面開口。在軸20的周壁，設有向上下方向延伸對氣體通道18供給氣體的氣體供給路22。對載置在陶瓷加熱器110的晶圓載置面12a的晶圓，利用電漿施以CVD成膜或施以蝕刻時，經由氣體供給路22，將氣體從氣體通道18的開口向圓板12的側面噴出，可防止堆積物附著在圓板12的下面。在陶瓷加熱器110製造，首先，製作圖9（b）所示基礎成形體130。基礎成形體130，在未燒製圓板下層132的上面，並不是設置加熱器電極用溝33而係氣體通道18，對未燒製軸134設置氣體供給路22以外，係與基礎成形體30相同的構成。未燒製圓板下層132的上下兩面，分別中心位置與從其中心位置在半徑外方向離150mm的位置的高低差d在0.7mm以上2.6mm以下，或傾斜角度θ在0.25∘以上1∘以下為佳。該基礎成形體130，使用圖9（a）所示成形模具140成形。成形模具140，係將成形模具40的圓形面45b作成可形成氣體通道18的形狀，加入用於形成氣體供給路22的芯棒構件142以外，與成形模具40係相同的構成。將該成形模具140，以圓板成形部45為下，軸成形部46朝上配置，將陶瓷漿料從注入口注入填充圓板成形部45及軸成形部46的全體，藉由使該漿料硬化得到基礎成形體130。另一方面，有別於基礎成形體130，製作埋設加熱器電極14及RF電極16的圓板成形體136（參照圖9（c））。製作圓板成形體136，可例如在圖5省略煆燒體60的未燒製軸34的製作僅製作圓板部分即可。該圓板成形體136的上下兩面，亦具有上述數值範圍的高低差d或上述數值範圍的傾斜角度θ為佳。然後，如圖9（c）所示，在基礎成形體130的上面之中的氣體通道18的部分以外的部分印刷接著劑132a，將該接著劑132a的印刷面與圓板成形體136的加熱器電極14側的表面重疊接著。藉此，可得圖9（d）所示最終成形體150。接著劑，只要使用例如含有與圓板12或軸20相同的陶瓷材料、膠合劑及分散劑的糊料的接合劑即可。將最終成形體150，以與上述實施形態同樣地，乾燥、脫脂、煆燒作成煆燒體160之後，藉由將該煆燒體160燒製，得到陶瓷加熱器110。例如，如圖10所示，對平坦的水平支持板70(例如以BN材組成的板)，以煆燒體160的圓板部分為下，軸部分為上載置，將甜甜圈狀的重錘72放在圓板部分，以施加荷重的狀態常壓燒製作成瓷加熱器110。該陶瓷加熱器110，由於圓板12與軸20以沒有接合界面的狀態一體化，故並不會發生接合界面的剝離。此外，陶瓷加熱器110，由於可將煆燒體160僅以1次的燒成(1次熱履歷)製作，故與對圓板12與軸20施加2次熱履歷的情形相比，可抑制一燒結粒子的成長，進而提高強度。
在上述實施形態，雖表示將加熱器電極14及RF電極16的雙方內建在圓板12的例，但亦可僅將任意一方內建在圓板12。此外，亦可取代該等電極14、16或進一部在圓板12內建靜電電極。此點在陶瓷加熱器110亦相同。
在上述實施形態，將成形模具40的圓形面45a作成凹陷成圓錐狀的凹面，將圓形面45b作成鼓起成圓錐狀的凸面，惟亦可將圓形面45a作成凹陷成圓錐台狀的凹面，將圓形面45b作成鼓起成圓錐台狀的凸面。或者，亦可將圓形面45a作成凹陷成曲面狀的凹面，將圓形面45b作成鼓起成曲面狀的凸面。此點在成形模具140亦相同。
在上述實施形態，雖對加熱器電極用溝33嵌入線圈狀的加熱器電極14，對RF電極用溝35a嵌入網眼狀的RF電極16，惟亦可不設置如此的溝33、35a，使用電極糊料以網版印刷等形成電極圖案。電極圖案亦可形成在成形體的表面，亦可在製作成形體之前預先設置在成形模具的內面，在製作成形體時附著在該成形體。電極糊料，係例如，以包含導電材料、陶瓷加熱器材料、膠合 劑、及分散劑的調製。導電材料，可例示，鎢、碳化鎢、白金、銀、鈀、鎳、鉬、釕、鋁及該等物質的化合物等。膠合劑，可使用聚乙二醇(PEG)、丙二醇(PG)、聚丙二醇(PPG)、聚四亞甲基二醇(PTMG)，聚六亞甲基二醇(PHMG)、聚乙烯醇縮丁醛(PVB)、丙烯酸樹脂等。此外，分散劑、分散劑可使用與成形化劑同樣的。此點在陶瓷加熱器110亦相同。
在上述實施形態，使基礎成形體30的未燒製圓板32的上下兩面的傾斜角度θ為0.25°以上1°以下，惟傾斜角度θ亦可在該範圍外的角度(例如0°或2°)。此時，雖所得陶瓷加熱器10的晶圓載置面12a並無法如上述實施形態那樣平坦，但由於圓板12與軸20係以沒有接合界面的狀態一體化，故並不會發生接合界面的剝離。此外，此時亦可將煆燒體僅以1次的熱履歷製作，故與對圓板12與軸20施加2次熱履歷的情形相比，可抑制一燒結粒子的成長，進而提高強度。此點在陶瓷加熱器110亦相同。
在上述實施形態，在基礎成形體30的階段(參照圖5(b))、對基礎成形體30安裝加熱器電極14的階段(參照圖5(c))、對基礎成形體30層積加熱器電極14及未燒製圓板中層35的階段(參照圖5(f))、對基礎成形體30層積加熱器電極14、未燒製圓板中層35及RF電極16的階段(參照圖5(g))的任意一個階段，以與上述燒製步驟同樣的手法燒製製作燒製體，剩餘的部分可個別製作與該燒製體接合。
在上述實施形態，軸20係使用圓筒構件，亦可使用實心的圓柱構件。
在上述實施形態的陶瓷加熱器10，如圖12所示，軸20的外面與圓板12之中，軸20一體化的背面12c的邊界部10a或軸20的內面與圓板12的背面12c 的邊界部10b作成R面(具有既定曲率半徑的曲面)。或者，亦可如圖11所示，將邊界部10a、10b作成錐度面。如此，可緩和施加於邊界部10a、10b的應力。製造邊界部10a、10b為R面或錐度面的陶瓷加熱器10時，將圖4的成形模具40之中將對應邊界部10a、10b的部分作成R面或錐度面即可。再者，亦可將邊界部10a、10b的一方作成R面，另一方作成直角，亦可將邊界部10a、10b的一方作成錐度面，另一方作成直角，亦可將邊界部10a、10b的一面作成R面，另一方作成錐度面。此點在陶瓷加熱器110亦相同。
〔實施例〕
在以下說明的實驗例A1~A8製作陶瓷加熱器10，在實驗例A9製作與陶瓷加熱器10同樣的陶瓷加熱器。此外，在實驗例B1~B2製作陶瓷加熱器110，在實驗例B3製作與陶瓷加熱器110同樣的陶瓷加熱器。
〔實驗例A1〕
1.成形步驟
首先，將100質量份氮化鋁粉末(純度99.7%)、5質量份氧化釔、2質量份分散劑(聚羧酸系共聚物)、及30質量份分散劑(多元酸酯)，使用球磨機(trommel)混合14小時，得到陶瓷漿料前驅物。對該陶瓷漿料前驅物，混合4.5質量份異氰酸酯(4,4'-二苯甲烷二異氰酸酯)、0.1質量份水、0.4質量份觸媒(6-二甲基胺基1-己醇)，得到陶瓷漿料。使用該陶瓷漿料，遵照圖5所示步驟製作最終成形體50。成形模具40的傾斜角度θ作成0.5°。成形模具40的圓形面的中心位置與從其中心位置在半徑外方向離150mm的位置的高低差d為1.3mm。此外，加熱器電極14使用Mo線圈，RF電極16使用Mo網眼。
2.乾燥．脫脂．煆燒步驟
將所得最終成形體50以100℃乾燥10小時，接著以最高溫度500℃脫脂，進一步以最高溫度820℃，氮氣氛煆燒，得到煆燒體60。
3.燒製步驟 如圖6所示，在BN製的平坦的水平支持板70，以煆燒體60的圓板部分為下，軸部分為上載置，將甜甜圈狀的重錘72（10kg）放在圓板部分，以施加荷重的狀態，在氮氣體中以1860℃常壓燒製6小時。藉此，得到陶瓷加熱器10（圓板12的直徑300mm）。
實施例1的陶瓷加熱器10，係如表2所示，強度為330MPa、平均粒徑為4.2μm、燒製後的彎曲為0.05mm。此外，最終成形體50並未看見氣泡。再者，強度測定係遵照JIS︰1601，以包含圓板12與軸20的連接部切出試驗片。試驗片係作成寬度W4.0mm，厚度t3.0mm，長度40mm的長方體。該試驗片，設置在以一定距離配置的2支點上，使連接部在支點間的中央，分成從支點間的中央到左右等距離的2點施加荷重測定折斷時的最大彎曲應力。平均粒徑，係以SEM觀察的粒子的長軸與短軸的平均作為粒徑，將觀察40個粒子的粒徑的平均作為平均粒徑。彎曲係以晶圓載置面12a的高度的最大值與最小值的差。有無氣泡，係將最終成形體50的剖面以目視觀察判斷。此外，實驗例A1的陶瓷加熱器10，係如圖13的SEM像（倍率500倍，反射電子像）所示，以無法辨別圓板狀燒製體與管狀燒製體的接合界面的狀態一體化。再者，SEM影像亦可利用2次電子像。
［實驗例A2～A7］ 在實驗例A2～A7，變更實驗例A1的傾斜角度θ及高低差d以外，以與實驗例A1同樣地製作陶瓷加熱器10。實驗例A2～A7的陶瓷加熱器10，與實驗例A1同樣，圓板12與軸20以沒有接合界面的狀態一體化。實驗例A2～A7的傾斜角度θ、高低差d、燒製方法、強度、平均粒徑、燒製後的彎曲及有無氣泡彙整在表2。
［實驗例A8］ 1.成形步驟 以與實驗例A1同樣地調製陶瓷漿料前驅物。對該陶瓷漿料前驅物，加入4.5質量份異氰酸酯（六亞甲基異氰酸酯）、0.1質量份的水、0.4質量份的觸媒（6-二甲基氨基1-己醇），混合得到陶瓷漿料。使用該陶瓷漿料，遵照圖5所示步驟製作最終成形體50。成形模具40的傾斜角度θ為0.5∘，高低差d為1.3mm。加熱器電極14及RF電極16，係將Mo糊料（包含氮化鋁粉末（純度99.7%）），以網版印刷形成。因此，省略加熱器電極用溝33及RF電極用溝35a。
2.乾燥．脫脂．煆燒步驟 將所得最終成形體50，以100℃乾燥10小時，接著，藉由以最高溫度1300℃，以氫氣氛脫脂．煆燒，得到煆燒體60。
3.燒製步驟 藉由與實驗例A1同樣地燒製，得到實驗例A8的陶瓷加熱器10。將其特性示於表2。再者，該陶瓷加熱器10與實驗例A1同樣，並未看到接合界面。
［實驗例A9］ 1.成形步驟 對95質量%氮化鋁粉末，加入5質量%氧化釔作為燒結助劑，使用球磨機混合。對所得混合粉末，添加膠合劑，藉由噴霧造粒法造粒。將所得造粒粉脫脂，藉由金屬模具成形及CIP，成形為圓板狀成形體及管狀成形體。在圓板狀成形體的內部埋設作為RF電極的Mo網眼、作為加熱器電極的Mo線圈。
2.燒製步驟
將圓板狀成形體，在氮氣體中，以熱壓製法，以1860℃燒製6小時，作成圓板狀燒製體。有別於此，將管狀成形體在氮氣體中，以1860℃常壓燒製6小時，作為管狀燒製體。
3.接合步驟
在圓板狀燒製體與管狀燒製體的接合界面塗佈硝酸釔，以100℃乾燥1小時。然後，藉由日本特開2006-232576號公報的實施例1所記載的接合方法，將圓板狀燒製體與管狀燒製體熱處理接合，得到實驗例A9的陶瓷加熱器。將其特性示於表2。再者，實驗例A9的陶瓷加熱器，係如圖14的SEM影像所示，以可辨別圓板狀燒製體與管狀燒製體的接合界面的狀態一體化。
Figure 107138748-A0305-02-0022-1
*表2中，橫槓(-)係表示未測定。
由表2的實驗例A1~A7的結果明顯可知，傾斜角度θ在0.25°以上1°以下(高低差d為0.7mm以上2.6mm以下)，可較傾斜角度θ在0°(高低差d為0mm)時減輕彎曲。此外，如實驗例A1、A3~A7有傾斜角度θ(高低差d)時，在最終成形體50並未看到氣泡。再者，實驗例A1、A8與實驗例A9相比，平均粒徑小，而強度高。在實驗例A9，由於係將圓板狀燒製體與管狀燒製體在燒製而接合，故可辨別接合界面，可認為燒結粒子亦進行成長而降低強度。對此，在實驗例A1、A8，可認為由於係將圓板部分與軸部分沒有接縫的煆燒體60僅以1次的燒製，故沒有接合界面，可抑制燒結粒子的成長，進一步可提高強度。再者，實驗例A2～A7的陶瓷加熱器10，由於傾斜角度θ及高低差d不同以外以與實驗例A1同樣地製作，可認為強度及平均粒徑與實驗例A1同等。
［實驗例B1］ 依照圖9製作最終成形體150，將該最終成形體150煆燒作成煆燒體160之後，依照圖10製作實驗例B1的陶瓷加熱器110。成形步驟的陶瓷漿料係以與實驗例A1同樣地製作。此外，乾燥．脫脂．煆燒步驟及燒製步驟的條件，亦與實驗例A1相同。使用混合氮化鋁粉末、作為膠合劑的丙烯酸樹脂及作為分散劑的松油醇的糊料作為接著劑。將其特性示於表3。再者，該陶瓷加熱器110亦未看到接合界面。
［實驗例B2］ 依照圖9製作最終成形體150，將該最終成形體150煆燒作成煆燒體160之後，依照圖10，製作實驗例B2的陶瓷加熱器110。成形步驟的陶瓷漿料係與實驗例A8同樣地製作。此外，乾燥．脫脂．煆燒步驟及燒製步驟的條件亦與實驗例A8相同。使用混合氮化鋁粉末、作為膠合劑的丙烯酸樹脂及作為分散劑的松油醇的糊料作為接著劑。將其特性示於表3。再者，該陶瓷加熱器110亦未看到接合界面。
［實驗例B3］ 1.成形步驟 對95重量%氮化鋁粉末，加入5重量%氧化釔作為燒結助劑，使用球磨機混合。對所得混合粉末，添加膠合劑，藉由噴霧造粒法造粒。將所得造粒粉脫脂，藉由金屬模具成形及CIP，成形為圓板狀成形體及管狀成形體。在圓板狀成形體的製作在內部埋設加熱器電極（Mo線圈）的第1圓板狀成形體，及在內部埋設RF電極（網眼電極）的第2圓板狀成形體作為圓板狀成形體。
2.燒製步驟 第1圓板狀成形體及第2圓板狀成形體，分別個別在氮氣體中，以熱壓製法，以1860℃燒製6小時，作成第1圓板狀燒製體及第2圓板狀燒製體。此外，將管狀成形體在氮氣體中，以1860℃常壓燒製6小時，作為管狀燒製體。
3.接合步驟 在第1圓板狀燒製體、第2圓板狀燒製體及管狀燒製體的接合界面塗佈硝酸釔，以100℃乾燥1小時。然後，藉由日本特開2006-232576號公報的實施例1所記載的接合方法，將第1圓板狀燒製體、第2圓板狀燒製體及管狀燒製體熱處理接合，得到實驗例B3的陶瓷加熱器。將其特性示於表3。再者，實驗例B3的陶瓷加熱器，係以第1圓板狀燒製體、第2圓板狀燒製體及管狀燒製體的接合界面可以SEM辨別的狀態一體化。
[表3]
Figure 107138748-A0304-0003
由表3明顯可知，在實驗例B1～B2，與實驗例B3相比可減輕彎曲。此外，實驗例B1～B2，與實驗例B3相比，平均粒徑小，強度高。可認為在實驗例B3，由於第1圓板狀燒製體、第2圓板狀燒製體及管狀燒製體係以熱處理接合，故可辨別接合界面，燒結粒子亦進行成長而強度下降。對此，實驗例B1～B2，可認為由於係將圓板部分與軸部分沒有接縫的煆燒體160，僅以1次的燒製，故沒有接合界面，可抑制燒結粒子的成長，進一步可提高強度。
以上說明的實驗例之中，實驗例A1～A8及實驗例B1～B2係相當於本發明的實施例，實驗例A9及實驗例B3相當於比較例。再者，上述的實驗例不應限定於本發明。
本發明係主張以日本專利申請編號2017-212932為優先權其申請日為西元2017年11月2日，且其全部內容以參考資料包含於此。 [產業上的可利性]
本發明，可利用在使用於半導體製造裝置的構件，例如陶瓷加熱器、靜電吸盤加熱器、靜電吸盤等。
10、110‧‧‧陶瓷加熱器 10a、10b‧‧‧邊界部 12‧‧‧圓板 12a‧‧‧晶圓載置面 12b‧‧‧圓板下層 12c‧‧‧背面 14‧‧‧加熱器電極 16‧‧‧RF電極 18‧‧‧氣體通道 20‧‧‧軸 22‧‧‧氣體供給路 30‧‧‧基礎成形體 32‧‧‧未燒製圓板下層 33‧‧‧加熱器電極用溝 34‧‧‧未燒製軸 35‧‧‧未燒製圓板中層 35a‧‧‧RF電極用溝 36‧‧‧未燒製圓板上層 40‧‧‧成形模具 40a‧‧‧注入 40b‧‧‧排放口 41‧‧‧模具本體 42‧‧‧第1蓋 43‧‧‧底板 44‧‧‧圓柱體 45‧‧‧圓板成形部 45a、45b‧‧‧圓形面 45c‧‧‧外周面 46‧‧‧軸成形部 47‧‧‧第2蓋 48‧‧‧第3蓋 50‧‧‧最終成形體 60‧‧‧煆燒體 70‧‧‧水平支持板 72‧‧‧重錘 130‧‧‧基礎成形體 132‧‧‧未燒製圓板下層 132a‧‧‧接著劑 134‧‧‧未燒製軸 136‧‧‧圓板成形體 140‧‧‧成形模具 142‧‧‧芯棒構件 150‧‧‧最終成形體 160‧‧‧煆燒體
〔圖1〕陶瓷加熱器10的立體圖。
〔圖2〕圖1的A-A剖面圖(縱剖面圖)。
〔圖3〕基礎成形體30的縱剖面圖。
〔圖4〕成形模具40的縱剖面圖。
〔圖5〕製作到最終成形體50的成形步驟圖。
〔圖6〕燒製煆燒體60得到陶瓷加熱器10的燒製步驟圖。
〔圖7〕陶瓷加熱器110的立體圖。
〔圖8〕圖7的B-B剖面圖。
〔圖9〕製作到最終成形體150的成形步驟圖。
〔圖10〕燒製煆燒體160得到陶瓷加熱器110的燒製步驟圖。
〔圖11〕陶瓷加熱器10的變形例的縱剖面圖。
〔圖12〕陶瓷加熱器10的變形例的縱剖面圖。
〔圖13〕實驗例A1的陶瓷加熱器10的SEM照片。
〔圖14〕實驗例A9的陶瓷加熱器的SEM照片。
10‧‧‧陶瓷加熱
12‧‧‧圓板
12a‧‧‧晶圓載置面
20‧‧‧軸

Claims (11)

  1. 一種半導體製造裝置用構件，其係包括：內建電極的陶瓷製圓板及支持上述圓板的陶瓷製的軸的半導體製造裝置用構件，上述圓板與上述軸，以沒有接合界面的狀態一體化，其中上述圓板，具有在上述圓板的側面開口沿著上述圓板的板面方向設置的氣體通道，上述軸，具有在上下方向上延伸對上述氣體通道供給氣體的氣體供給路。
  2. 一種半導體製造裝置用構件，其係包括：內建電極的陶瓷製圓板及支持上述圓板的陶瓷製的軸的半導體製造裝置用構件，上述圓板與上述軸，以沒有接合界面的狀態一體化，其中上述軸的外面與上述圓板之中上述軸被一體化的面的邊界部係具有既定曲率半徑的曲面或錐度面。
  3. 一種半導體製造裝置用構件，其係包括：內建電極的陶瓷製圓板及支持上述圓板的陶瓷製的軸的半導體製造裝置用構件，上述圓板與上述軸，以沒有接合界面的狀態一體化，其中上述軸是圓筒構件，上述軸的內面與上述圓板之中，上述軸與被一體化的面的邊界部係具有既定曲率半徑的曲面或錐度面。
  4. 如申請專利範圍第1至3項中任一項之半導體製造裝置用構件，其 中上述電極係加熱器電極、RF電極及靜電電極的至少一種。
  5. 一種用於製造申請專利範圍第1至4項中任一項之半導體製造裝置用構件的模具，其包括：用於形成上述圓板之中軸側的圓板下層的空間的圓板成形部；及用於形成連通上述圓板成形部的上述軸的空間的軸成形部。
  6. 如申請專利範圍第5項之模具，其中上述圓板成形部，係以連接一對圓形面與該一對圓形面的外周面包圍的空間，上述一對圓形面中的上述軸成形部側的圓形面，係向上述軸成形部側凹陷的凹面，上述一對圓形面中與上述軸成形部相反側的圓形面，可為向上述軸成形部側鼓起的凸面。
  7. 如申請專利範圍第6項之模具，其中上述凹面及上述凸面，中心位置與從該中心位置向半徑外方向離150mm的位置的高低差d為0.7mm以上2.6mm以下。
  8. 如申請專利範圍第6或7項之模具，其中上述凹面及上述凸面的傾斜角度θ為0.25°≦θ≦1°。
  9. 如申請專利範圍第6或7項之模具，其中上述凹面，係對上述軸成形部側以圓錐狀或圓錐台狀凹陷的面，上述凸面係對上述軸成形部側以圓錐狀或圓錐台狀鼓起的面。
  10. 一種半導體製造裝置用構件的製法，包含：(a)使用申請專利範圍第5至9項中任一項之模具，以模鑄法製作藉由上述圓板成形部成形的未燒製圓板下層與藉由上述軸成形部成形的未燒製軸，以沒有接縫的狀態一體化的基礎成形體的步驟； (b)在上述基礎成形體的上述未燒製圓板下層的上面，層積與上述未燒製圓板下層平行的電極或形成其前驅物的未燒製圓板上層得到最終成形體的步驟；及(c)將上述最終成形體煆燒之後，藉由使上述未燒製圓板上層為下，上述未燒製軸朝上載置在水平支持面的狀態燒製，得到圓板與軸以沒有接合界面的狀態一體化的半導體製造裝置用構件的步驟。
  11. 如申請專利範圍第10項之半導體製造裝置用構件的製法，其中在上述步驟(a)，將上述基礎成形體以模鑄法製作時，在上述未燒製圓板下層的上面形成在側面開口的氣體通道，在上述步驟(b)，可在上述氣體通道上，將上述未燒製圓板上層接著得到最終成形體。
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