TWI809244B - 噴頭和具有噴頭的基板處理設備 - Google Patents
噴頭和具有噴頭的基板處理設備 Download PDFInfo
- Publication number
- TWI809244B TWI809244B TW109102225A TW109102225A TWI809244B TW I809244 B TWI809244 B TW I809244B TW 109102225 A TW109102225 A TW 109102225A TW 109102225 A TW109102225 A TW 109102225A TW I809244 B TWI809244 B TW I809244B
- Authority
- TW
- Taiwan
- Prior art keywords
- shower head
- side wall
- coupling unit
- substrate processing
- upper cover
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本發明涉及一種噴頭和一種基板處理設備,其中所述基板處理設備包括所述噴頭。所述噴頭透過耦合單元固定至側壁並且可以防止噴頭與側壁分離。噴頭可以透過耦合單元固定至側壁。因此,即使藉由熱膨脹增加輔助凹槽的直徑,耦合單元的第二端部仍可以防止耦合單元從輔助凹槽掉落,使得側壁和噴頭之間的耦合力可得以增加。此外,即使進行維修工作,輔助凹槽也不會變寬。儘管僅有耦合單元的第二端部被切斷,但仍可容易地更換側壁。
Description
本發明涉及一種用於向基板處理設備內的反應空間供應氣體的噴頭以及具有所述噴頭的基板處理設備,具體地說,本發明涉及一種噴頭以及具有所述噴頭的設備,所述噴頭透過槳鎖固定至一側壁以防止噴頭與側壁分離。
一般來說,為了製造半導體裝置、平板顯示面板、太陽能電池等等,需要在基板的表面上形成預定的電路圖案或光學圖案。為此,在基板處理設備內執行基板處理製程。基板處理製程包括在基板上沉積薄膜之特定材料的薄膜沉積製程,使用光敏材料選擇性地曝光薄膜的顯影製程,以及藉由去除薄膜所選擇性曝光的區域而形成圖案的蝕刻製程。
這樣的半導體製造製程在基板處理設備內執行,並且所述基板處理設備被設計成具有用於相應製程的最佳環境。近來,使用電漿來進行沉積或蝕刻製程的基板處理設備被廣泛地使用。
使用電漿的基板處理設備包括電漿增強化學氣相沉積(plasma enhanced chemical vapor deposition,PECVD)設備以及電漿蝕刻設備,其中電漿增強化學氣相沉積設備使用電漿形成薄膜,而電漿蝕刻設備對薄膜進行蝕刻和圖案化。
圖1係根據習知技術示出使用電漿的基板處理設備之實施例的剖視圖。
參照圖1,習知的基板處理設備包括腔室10、上蓋20、基座(susceptor) 30、噴頭40和側壁50。
腔室10為基板處理製程提供反應空間P。此時,腔室10的底表面的一側與排氣口12連通,排氣口12用於從反應空間P排出氣體。
上蓋20安裝在腔室10的頂部以密封反應空間P,並且上蓋20作為使用電漿的基板處理設備中的電漿電極。上蓋20的一側透過電源線電連接至射頻(radio frequency,RF)電源供應器24。此時,射頻電源供應器24產生射頻功率,並射頻電源供應器24將所產生的射頻功率提供給作為電漿電極的上蓋20。此外,上蓋20的中央部與氣體供應管26連通,氣體供應管26為基板處理製程供應處理氣體。
基座30安裝在腔室10中,並且基座30支撐從外部提供的基板S。這樣的基座30是面對上蓋20的對電極(counter electrode),並且基座30透過支撐基座30的支撐軸32電性接地。此時,支撐軸32由波紋管(bellows) 34所包圍,波紋管34密封支撐軸32和腔室10的底表面。
噴頭40安裝在上蓋20的下方,以面對基座30。在噴頭40和上蓋20之間形成有氣體緩衝空間42,處理氣體透過穿過上蓋20地安裝的氣體供應管26供應至氣體緩衝空間42。此時,將處理氣體作為氣體混合物供給至氣體緩衝空間42。藉由混合反應氣體和源氣體而獲得的氣體混合物用於在基板S上形成預定薄膜。這樣的噴頭40透過與氣體緩衝空間42連通的多個注氣孔44將處理氣體注入至反應空間P中。
側壁50具有固定至上蓋20的第一端部51和支撐噴頭40的第二端部53,並且第一端部51和第二端部53藉由連接部52連接。
一般來說,噴頭40牢固地安裝在上蓋20或腔室10的上壁表面上。然而,當將噴頭40牢固地安裝在上蓋20或腔室10的上壁表面上時,在電漿所提供的熱量使得噴頭40熱膨脹的情況下,連續的熱應力被施加到噴頭40。這種熱應力可能會損壞噴頭40。
因此,提出了一種習知方法,此方法可以改善側壁50的結構以具有可撓性,並且因此藉由施加至噴頭40上的熱膨脹和熱收縮使熱應力最小化。
圖2A和圖2B係根據習知技術描繪側壁的結構以及在側壁和噴頭之間之耦合的示意圖。
參照圖2A和圖2B,根據習知技術的側壁具有結構,在此結構中,第一端部51、連接部52和第二端部53於形成一之字形。
此時,第一端部51藉由螺栓51a固定至上蓋20的底表面,且第二端部53固定至噴頭40並且第二端部53支撐噴頭40。當噴頭40熱膨脹時,連接部52具有可撓性以透過熱膨脹來將機械應力最小化。
圖2A示出側壁的第二端部53透過銷61固定至噴頭40。具體來說,將側壁的第二端部53裝配至噴頭40的相應凹槽中,然後將銷61插入銷插孔中以固定側壁和噴頭。
然而,由於熱膨脹會使得銷插孔變寬,所以銷可能掉出。因此,需要另外透過焊接以將插入至銷插孔中的銷固定至噴頭的流程,以防止銷掉出。
圖2B示出側壁的第二端部53透過鉚釘62固定至噴頭。具體來說,將側壁的第二端部53與噴頭對齊,鑽出鉚釘插孔,並將鉚釘62插入鉚釘插孔中。接著,當藉由工具拉動鉚釘62內的墊片時,拉動鉚釘62內之墊片的端部以將噴頭固定至側壁。
然而,在習知鉚釘型結構的情況下,由於熱膨脹會使得鉚釘插孔變寬,所以鉚釘可能掉出。此外,當拉動鉚釘時,鉚釘插孔的端部變寬。因此,每當拆卸鉚釘進行維護時,相應的鉚釘插孔就會縷縷地擴大。
[相關技術文獻]
[專利文獻]
專利文獻1:2001年8月11日公開的韓國專利申請公開號第10-2001-0076391號。
各個實施例針對一種噴頭以及具有噴頭的基板處理設備。所述噴頭透過耦合單元固定至側壁,耦合單元用於向噴頭和側壁提供壓力,並且即使藉由噴頭的熱膨脹使耦合單元所穿過的輔助凹槽的直徑增加,所述噴頭仍可以防止由於耦合單元的末端所導致耦合單元掉出,從而防止側壁與噴頭的分離。
在一個實施例中,提供一種噴頭,噴頭將處理氣體注入至一基板處理設備內的一反應空間中,並且噴頭透過一側壁固定至基板處理設備的一上蓋。噴頭可以包含一耦合單元,耦合單元穿過噴頭和側壁地安裝以施加壓力。噴頭的一側部可以包括一或多個安裝凹槽,以防止噴頭和側壁之間透過耦合單元分開。
在一個實施例中,一種基板處理設備可以包括:一腔室,用以為一基板處理製程提供一反應空間;一上蓋,安裝在腔室的一頂部以密封反應空間; 一基座,安裝在腔室中以支持從外部提供的一基板;一噴頭,安裝在上蓋下面,以面對基座;一側壁,將噴頭固定至上蓋;以及一耦合單元,耦合單元穿過噴頭和側壁地安裝以施加壓力。噴頭的一側部可以包括一個或多個安裝凹槽,以防止噴頭和側壁之間透過耦合單元分開。
根據本發明的實施例,噴頭可以透過耦合單元固定至側壁。因此,即使藉由熱膨脹增加耦合單元所穿過之輔助凹槽的直徑,耦合單元的端部仍可以防止耦合單元從輔助凹槽掉落,使得側壁和噴頭之間的耦合力可得以增加。
此外,即使進行維修工作,耦合單元所穿過之輔助凹槽的直徑也不會變寬。儘管僅有耦合單元的端部被切斷,但仍可容易地更換側壁。
以下將參考附圖描述本發明的示例性實施例。
圖3係根據本發明之一實施例示出包括噴頭的基板處理設備的示意性剖視圖。圖4係根據本發明之一實施例示出圖3的噴頭的角部的放大剖視圖。圖5係根據本發明之另一實施例示出圖3的噴頭的角部的放大剖視圖。圖6A和圖6B係用於描述噴頭藉由耦合單元固定至側壁之原理的示意圖。
參照圖3至圖5以及圖6A和圖6B,將描述根據本發明之實施例中藉由槳鎖固定至側壁350的噴頭340。
根據本發明之實施例的噴頭340將處理氣體注入至基板處理設備300內的反應空間P中,並且噴頭340透過側壁350固定至基板處理設備300的上蓋320的底部。
噴頭340包括中心部341和側部342,其中在中心部341內形成有用於將處理氣體注入反應空間P的多個注氣孔344,且側壁350的第二端部353固定至側部342。此時,從頂部看時,噴頭340可以具有圓形或矩形形狀。
側壁350包括第一端部351、第二端部353和連接部352。第一端部351透過螺栓351a固定至基板處理設備300的上蓋320的底部,且第二端部353固定至噴頭340的側部342上以支撐噴頭340。連接部352的一端連接至第一端部351的一端,且連接部352的另一端連接至第二端部353的一端。
側壁350的第一端部351透過螺栓351a固定至上蓋320的底部,並且側壁350的第二端部353固定至噴頭340的側部342,以提供一個反應氣體在上蓋320和噴頭340之間擴散的空間。側壁350用來在上蓋320和噴頭340之間提供密封的空間,並防止反應氣體擴散至腔室310的側壁。
此時,側壁350可具有可撓結構,以藉由噴頭340的熱膨脹或熱收縮來將熱應力最小化。
耦合單元360包括第一端部361、外殼362、內墊片363、突出端部364和拉出部365。當耦合單元360插入輔助凹槽342a後藉由工具拉出拉出部365時,將內墊片363和突出端部364向上拉。因此,外殼362的一部分被按壓以形成第二端部366。
可以提供各種實施例作為耦合單元360。在本發明中,描述了槳鎖用作耦合單元360。由於槳鎖的結構是眾所周知的,因此這裡省略其詳細描述。
為了使噴頭340藉由耦合單元360固定至側壁350,噴頭340的主體需要一個空間,可以在空間中形成耦合單元360的第二端部366。
因此,根據本發明實施例的噴頭340包括形成在側部342的側表面上的輔助凹槽342a和安裝凹槽342b。可以將耦合單元360插入輔助凹槽342a中,且安裝凹槽342b可作為可供耦合單元360的第二端部366形成的空間。
透過以下流程將噴頭340固定至側壁350。
首先,將側壁350的第二端部353放在噴頭340的側部342的側壁安裝部342c上,且輔助凹槽342a形成於第二端部353和噴頭340的側部342中,使得耦合單元360可以穿過輔助凹槽342a。
作為可供耦合單元360之第二端部366放置之空間的安裝凹槽342b透過T形切割器或其他工具形成於噴頭340的側部342的側表面上。
然後,當耦合單元360插入輔助凹槽342a後藉由工具拉出拉出部365時,將內墊片363和突出端部364向上拉,並且按壓外殼362的一部分以在安裝凹槽342b中形成耦合單元360的第二端部366。因此,噴頭340被固定至側壁350。
然後,當需要維修工作時,僅可藉由T形切割器切割耦合單元360的第二端部366,並且噴頭340可以與側壁350分開,使得維修工作可以容易地進行。
因此,除非在噴頭340的基材中產生裂紋的情況下,可以增加噴頭340的壽命。
圖4描繪根據本發明實施例的噴頭340,示出耦合單元360穿過噴頭340和側壁350,並且側壁350的第二端部353放置在噴頭340的側部342的側壁安裝部342c上。圖5描繪根據本發明之另一實施例的噴頭340,示出耦合單元360穿過噴頭340和側壁350,並且側壁350的第二端部353插入噴頭340的側部342的固定凹槽342d中。
如圖3所示,包括根據本發明之實施例之噴頭340的基板處理設備300包括腔室310、上蓋320、基座330、噴頭340和側壁350。
腔室310為基板處理製程提供反應空間P。此時,腔室310的底表面的一側與用於從反應空間P排出氣體的排氣口312連通。
上蓋320安裝在腔室310的頂部以密封反應空間P,並且上蓋320作為電漿電極。上蓋20的一側透過電源線電連接至射頻(radio frequency,RF)電源供應器324。此時,射頻電源供應器324產生射頻功率,並且射頻電源供應器324將所產生的射頻功率提供給作為電漿電極的上蓋320。此外,上蓋320的中心部與氣體供應管326連通,氣體供應管326為基板處理製程供應處理氣體。
基座330安裝在腔室310中,並且基座330支撐從外部所裝載的基板S。基座330作為面對上蓋320的對電極,並且基座330透過支撐著基座330的支撐軸332電性接地。此時,支撐軸332被波紋管334包圍,波紋管334密封支撐軸332和腔室310的底表面。
噴頭340安裝在上蓋320下方,以面對基座330。在噴頭340和上蓋320之間形成有氣體緩衝空間343,從穿過上蓋320地安裝的氣體供應管326所供應的處理氣體被供應至氣體緩衝空間343。此時,將處理氣體作為氣體混合物提供至氣體緩衝空間343,藉由混合反應氣體和源氣體所產生的氣體混合物以在基板S上形成預定薄膜。噴頭340透過與氣體緩衝空間343連通的多個注氣孔344將處理氣體注入至反應空間P中。
側壁350的第一端部351固定至上蓋320,並且側壁350的第二端部353支撐噴頭40。第一端部351和第二端部353藉由連接部352連接。
如圖3所示,包括根據本發明之實施例之噴頭340的基板處理設備300具有與根據相關技術的使用電漿的基板處理設備幾乎相同的結構,但是,其特徵在於,如上所述,噴頭340藉由耦合單元360被固定至側壁350。
圖7係描繪噴頭藉由耦合單元固定至噴頭的局部分解立體圖。
參照圖7,分別作為可供耦合單元360之第二端部366放置之空間的多個輔助凹槽342a和多個安裝凹槽342b可形成於噴頭340的側部342的側表面上。
此時,考慮到側壁350和噴頭340之間的耦合力以及噴頭340的剛度,可以形成適當數量的輔助凹槽342a和安裝凹槽342b。
根據本發明的實施例,噴頭可以透過耦合單元固定至側壁。因此,即使藉由熱膨脹增加耦合單元所插入之輔助凹槽的直徑,耦合單元的第二端部仍可以防止耦合單元從輔助凹槽掉落,使得側壁和噴頭之間的耦合力可得以增加。此外,儘管在維修工作中僅有耦合單元的第二端被切斷,但仍可以更換側壁,從而使得噴頭的壽命可得以改善。
儘管上面已經描述了各種實施例,但是本領域通常知識者將理解,所描述的實施例僅是示例性的。因此,不應基於所描述的實施例來限制本文所描述的公開內容。
10:腔室
12:排氣口
20:上蓋
24:射頻電源供應器
26:氣體供應管
30:基座
32:支撐軸
34:波紋管
40:噴頭
42:氣體緩衝空間
44:注氣孔
50:側壁
51:第一端部
51a:螺栓
52:連接部
53:第二端部
61:銷
62:鉚釘
300:基板處理設備
310:腔室
312:排氣口
320:上蓋
324:射頻電源供應器
326:氣體供應管
330:基座
332:支撐軸
334:波紋管
340:噴頭
341:中心部
342:側部
342a:輔助凹槽
342b:安裝凹槽
342c:側壁安裝部
342d:固定凹槽
343:氣體緩衝空間
344:注氣孔
350:側壁
351:第一端部
351a:螺栓
352:連接部
353:第二端部
360:耦合單元
361:第一端部
362:外殼
363:內墊片
364:突出端部
365:拉出部
366:第二端部
S:基板
P:反應空間
圖1係根據習知技術示出使用電漿的基板處理設備的示意性剖視圖。
圖2A係根據習知技術描繪透過銷將側壁和噴頭固定在基板處理設備中。
圖2B係根據習知技術描繪透過鉚釘將側壁和噴頭固定在基板處理設備中。
圖3係根據本發明之一實施例示出包括噴頭的基板處理設備的示意性剖視圖。
圖4係根據本發明之一實施例示出圖3的噴頭的角部的放大剖視圖。
圖5係根據本發明之另一實施例示出圖3的噴頭的角部的放大剖視圖。
圖6A和圖6B係用於描述噴頭藉由耦合單元固定至側壁之原理的示意圖。
圖7係描繪噴頭藉由耦合單元固定至噴頭的局部分解立體圖。
300:基板處理設備
310:腔室
312:排氣口
320:上蓋
324:射頻電源供應器
326:氣體供應管
330:基座
332:支撐軸
334:波紋管
340:噴頭
341:中心部
342:側部
343:氣體緩衝空間
344:注氣孔
350:側壁
360:耦合單元
S:基板
P:反應空間
Claims (10)
- 一種噴頭,該噴頭將處理氣體注入至一基板處理設備內的一反應空間中,並且該噴頭透過一側壁固定至該基板處理設備的一上蓋,該噴頭包括一耦合單元,該耦合單元穿過該噴頭和該側壁地安裝以施加壓力, 其中該噴頭的一側部包括一或多個安裝凹槽,以防止該噴頭和該側壁之間透過該耦合單元分開。
- 如請求項1所述之噴頭,其中該噴頭的該側部還包括一固定凹槽,該固定凹槽供該側壁插入。
- 如請求項1或2所述之噴頭,其中該噴頭具有一輔助凹槽,該輔助凹槽形成於該安裝凹槽的一底表面上,使得穿過該噴頭和該側壁的該耦合單元插入該輔助凹槽。
- 如請求項1或2所述之噴頭,其中該耦合單元包含: 一第一端部;以及一第二端部,用以與該第一端部提供壓力以固定該側壁和該噴頭。
- 如請求項4所述之噴頭,其中該第一端部位於該噴頭外,並且該第二端部位於該安裝凹槽的一頂表面上。
- 如請求項1所述之噴頭,其中該耦合單元為一槳鎖(oarlock)。
- 如請求項1或2所述之噴頭,其中該側壁具有一可撓結構,以透過該噴頭的熱膨脹或熱收縮來減小應力。
- 一種基板處理設備,包含: 一腔室,用以為一基板處理製程提供一反應空間;一上蓋,安裝在該腔室的一頂部以密封該反應空間;一基座,安裝在該腔室中以支持從外部提供的一基板;一噴頭,安裝在該上蓋下面,以面對該基座;一側壁,將該噴頭固定至該上蓋;以及一側壁,將該噴頭固定至該上蓋;以及一耦合單元,該耦合單元穿過該噴頭和該側壁地安裝以施加壓力,其中該噴頭的一側部包括一個或多個安裝凹槽,以防止該噴頭和該側壁之間透過該耦合單元分開。
- 如請求項8所述之基板處理設備,其中該噴頭的該側部還包括一固定凹槽,該固定凹槽供該側壁插入。
- 如請求項8或9所述之基板處理設備,其中該耦合單元為一槳鎖。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190010858A KR102700366B1 (ko) | 2019-01-29 | 2019-01-29 | 샤워헤드 및 이를 포함하는 기판처리장치 |
KR10-2019-0010858 | 2019-01-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202027862A TW202027862A (zh) | 2020-08-01 |
TWI809244B true TWI809244B (zh) | 2023-07-21 |
Family
ID=71842130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109102225A TWI809244B (zh) | 2019-01-29 | 2020-01-21 | 噴頭和具有噴頭的基板處理設備 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220098737A1 (zh) |
JP (1) | JP7546573B2 (zh) |
KR (1) | KR102700366B1 (zh) |
CN (1) | CN113302729B (zh) |
TW (1) | TWI809244B (zh) |
WO (1) | WO2020159064A1 (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100718643B1 (ko) * | 2005-11-28 | 2007-05-15 | 주식회사 유진테크 | 샤워헤드의 체결구조 |
KR20130012515A (ko) * | 2011-07-25 | 2013-02-04 | 주성엔지니어링(주) | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
KR20150073361A (ko) * | 2013-12-23 | 2015-07-01 | 엘지디스플레이 주식회사 | 대면적기판 처리장치 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2502267A (en) * | 1946-03-13 | 1950-03-28 | Robert L Mcpherson | Self-clinching fastener |
US5791850A (en) * | 1996-06-28 | 1998-08-11 | Lam Research Corporation | Vacuum compatible fastener and fastening system |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
JP2002194820A (ja) * | 2000-12-22 | 2002-07-10 | Akio Sudo | ボードアンカー |
JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
KR101063737B1 (ko) * | 2004-07-09 | 2011-09-08 | 주성엔지니어링(주) | 기판 제조장비의 샤워헤드 |
KR20060124813A (ko) * | 2005-05-26 | 2006-12-06 | 삼성전자주식회사 | 기판 가공 장치 |
TWI306782B (en) * | 2005-09-02 | 2009-03-01 | Applied Materials Inc | Suspension for showerhead in process chamber |
KR20070079835A (ko) * | 2006-02-03 | 2007-08-08 | 삼성전자주식회사 | 샤워헤드 및 이를 포함하는 기판 처리 장치 |
US20080087641A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Components for a plasma processing apparatus |
JP4842098B2 (ja) | 2006-11-13 | 2011-12-21 | 株式会社パワーシステム | 電気二重層キャパシタの製造方法 |
US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
US8187414B2 (en) * | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
KR101553214B1 (ko) * | 2009-05-29 | 2015-09-16 | 주식회사 테스 | 대면적 기판 처리 장치 |
US8573152B2 (en) * | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
KR20130027280A (ko) * | 2011-09-07 | 2013-03-15 | 엘아이지에이디피 주식회사 | 기판 처리장치 |
KR20140059669A (ko) * | 2012-11-08 | 2014-05-16 | 박형상 | 샤워헤드 및 이를 포함하는 박막 증착 장치 |
KR101686564B1 (ko) * | 2015-06-17 | 2016-12-15 | 세메스 주식회사 | 체결 어셈블리 및 이를 가지는 기판 처리 장치 |
KR101696252B1 (ko) * | 2015-09-25 | 2017-01-13 | 주식회사 테스 | 기판처리장치의 샤워헤드 어셈블리 |
-
2019
- 2019-01-29 KR KR1020190010858A patent/KR102700366B1/ko active IP Right Grant
- 2019-12-03 JP JP2021543233A patent/JP7546573B2/ja active Active
- 2019-12-03 CN CN201980088841.3A patent/CN113302729B/zh active Active
- 2019-12-03 WO PCT/KR2019/016913 patent/WO2020159064A1/ko active Application Filing
- 2019-12-03 US US17/427,080 patent/US20220098737A1/en active Pending
-
2020
- 2020-01-21 TW TW109102225A patent/TWI809244B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100718643B1 (ko) * | 2005-11-28 | 2007-05-15 | 주식회사 유진테크 | 샤워헤드의 체결구조 |
KR20130012515A (ko) * | 2011-07-25 | 2013-02-04 | 주성엔지니어링(주) | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
KR20150073361A (ko) * | 2013-12-23 | 2015-07-01 | 엘지디스플레이 주식회사 | 대면적기판 처리장치 |
Also Published As
Publication number | Publication date |
---|---|
US20220098737A1 (en) | 2022-03-31 |
JP7546573B2 (ja) | 2024-09-06 |
KR102700366B1 (ko) | 2024-08-30 |
CN113302729A (zh) | 2021-08-24 |
JP2022518539A (ja) | 2022-03-15 |
TW202027862A (zh) | 2020-08-01 |
KR20200093754A (ko) | 2020-08-06 |
CN113302729B (zh) | 2024-07-09 |
WO2020159064A1 (ko) | 2020-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101137545B1 (ko) | 일체형 웨이퍼 트레이 | |
US20090165722A1 (en) | Apparatus for treating substrate | |
TWI407505B (zh) | Plasma chemical reactor | |
KR102167800B1 (ko) | 캐소드 전극판 조립체 및 그 체결방법 | |
TWI494460B (zh) | A plasma processing device and a gas supply member supporting device | |
CN112233959A (zh) | 基板支承单元和包括其的基板处理系统 | |
TWI809244B (zh) | 噴頭和具有噴頭的基板處理設備 | |
KR100646318B1 (ko) | 플라즈마 식각 장치 | |
KR20160097688A (ko) | 샤워헤드 전극 어셈블리 | |
KR101461139B1 (ko) | 플라즈마 소스 및 플라즈마 에칭 장치 | |
KR100714304B1 (ko) | 반도체 제조장치의 반응가스 공급노즐 | |
TW202042274A (zh) | 電漿處理器的安裝結構及相應的電漿處理器 | |
JP4118117B2 (ja) | プラズマプロセス装置 | |
KR200198433Y1 (ko) | 반도체 건식각장비용 전극조립체의 상부전극 지지구조 | |
KR20090128960A (ko) | 기판처리장치 | |
KR20170127688A (ko) | 웨이퍼 트레이를 고정하는 클램프 | |
TW202230576A (zh) | 處理基板之設備 | |
KR200236764Y1 (ko) | 고주파 쉐이프트 윈도우 | |
KR20020093214A (ko) | 반도체 식각설비의 상부전극구조 | |
KR20140055655A (ko) | 박막의 균일성을 향상시키기 위한 샤워 플레이트 조립체 | |
KR101358741B1 (ko) | 플라즈마 처리장치용 챔버 및 그 제작방법 | |
KR20030096853A (ko) | 어플리케이터의 결합용 지그 | |
KR20070012995A (ko) | 쿨링 플레이트를 구비한 플라즈마 식각 장치 | |
KR20020002787A (ko) | 건식 식각 장치 | |
KR20030061641A (ko) | 반도체장치 식각설비의 척 조립체 |