CN113302729A - 喷头及包括该喷头的基板处理装置 - Google Patents
喷头及包括该喷头的基板处理装置 Download PDFInfo
- Publication number
- CN113302729A CN113302729A CN201980088841.3A CN201980088841A CN113302729A CN 113302729 A CN113302729 A CN 113302729A CN 201980088841 A CN201980088841 A CN 201980088841A CN 113302729 A CN113302729 A CN 113302729A
- Authority
- CN
- China
- Prior art keywords
- substrate processing
- side wall
- showerhead
- spray head
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 27
- 230000008569 process Effects 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000007921 spray Substances 0.000 claims description 17
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 230000008602 contraction Effects 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 2
- 238000005520 cutting process Methods 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 30
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 230000008646 thermal stress Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明涉及一种利用配合单元而将喷头固定在侧壁上,从而能够防止侧壁与喷头的脱离现象的喷头及包括该喷头的基板处理装置。根据本发明的喷头,利用配合单元而将喷头固定于侧壁,从而即使辅助槽的直径因热膨胀而变大,也通过配合单元的第二端部而防止配合单元从辅助槽脱落的现象,因此能够提高侧壁和喷头的配合力,即使在进行维修保养作业的情况下,也不会发生辅助槽变大的问题,且具有只要切割配合单元的第二端部就能够容易地更换侧壁的优点。
Description
技术领域
本发明涉及一种用于向基板处理装置内部的反应空间供给气体的喷头及包括该喷头的基板处理装置,更详细地讲,涉及一种利用桨锁而将喷头固定在侧壁上,从而能够防止侧壁与喷头的脱离现象的喷头及包括该喷头的基板处理装置。
背景技术
一般来讲,为了制造半导体器件、平板显示面板、太阳能电池等,需要在基板表面上形成规定的电路图案或光学图案,为此,在基板处理装置内执行在基板上沉积特定薄膜物质的薄膜沉积工艺、使用光敏物质选择性地曝光薄膜的光学处理工艺、去除选择性地曝光的区域的薄膜而形成图案的蚀刻工艺等的基板处理工艺。
这些半导体制造工艺是在为了相应工艺而设计成最佳环境的基板处理装置的内部执行,最近在广泛地使用利用等离子体执行沉积或蚀刻工艺的基板处理装置。
利用等离子体的基板处理装置中有利用等离子体而形成薄膜的PECVD(PlasmaEnhanced Chemical Vapor Deposition,等离子体增强化学气相沉积)装置和将薄膜蚀刻而图案化的等离子体蚀刻装置。
图1是示出现有技术的利用等离子体的基板处理装置的一实施例的剖视图。
参照图1,通常的基板处理装置具备腔室10、上部盖20、基座30、喷头(showerhead)40以及侧壁(side wall)50。
腔室10提供用于基板处理工艺的反应空间。此时,腔室10的底面的一侧与用于使反应空间排气的排气口12连通。
上部盖20设置于腔室10的上部以密封反应空间,且在利用等离子体的基板处理装置中发挥等离子体电极的作用。上部盖20的一侧通过电源电缆与RF(Radio Frequency,射频)电源24电连接。此时,RF电源24产生RF电力并将所产生的RF电力供给至作为等离子体电极的上部盖20。另外,上部盖20的中央部分与供给用于基板处理工艺的工艺气体的气体供给管26连通。
基座30设置于腔室10的内部并支撑从外部供给的基板S。这种基座30是与上部盖20对置的对置电极,基座30通过用于支撑该基座30的支撑轴32电性接地。此时,支撑轴32由密封支撑轴32和腔室10的下表面的波纹管34所包围。
喷头40以与基座30对置的方式设置于上部盖20的下部。在上述喷头40与上部盖20之间形成有通过贯通上部盖20的气体供给管26而工艺气体被供给的气体缓冲空间42。此时,工艺气体成为用于在基板S上形成规定的薄膜的源气体(source gas)和反应气体所混合的形态而供给至气体缓冲空间42。这种喷头40通过与气体缓冲空间42连通的多个气体喷射孔44而向反应空间喷射工艺气体。
就侧壁50而言,第一端部51固定于上部盖20,第二端部52支撑喷头40,第一端部51和第二端部53通过连接部52相连接。
通常,喷头40牢固地安装在上部盖20或腔室10的上部墙面上。然而,如此将喷头40牢固地安装在上部盖20或腔室10的上部墙面上的情况下,在喷头40因来自等离子体的热而热膨胀时,对喷头40连续地施加热应力,由于这种热应力而存在喷头40损坏的问题。
因此,过去提出有一种方法,该方法改进侧壁50的结构以具有柔韧性,从而能够使施加于喷头40的因热膨胀和收缩而产生的热应力最小化。
图2a和图2b是用于说明现有技术的侧壁的结构及侧壁与喷头的配合的图。
参照图2a和图2b,现有技术的侧壁具有第一端部51、中心部52以及第二端部53呈之字形(zigzag)的结构。
此时,第一端部51通过螺栓51a而固定于上部盖20的下部表面,第二端部53固定于喷头40而支撑喷头40。另外,连接部52具有柔韧性(flexibility),从而在喷头热膨胀时使热膨胀所产生的机械应力最小化。
图2a是利用销(pin)61而固定侧壁的第二端部53和喷头40的图,在将侧壁的第二端部53嵌合到喷头40的对应的槽中之后,将销插入到销插入孔中而固定侧壁和喷头。
然而,销插入孔因热膨胀而变大,因此存在销脱落的问题,而且为了不让销脱落,额外需要焊接固定插入到销插入孔中的销和喷头的过程。
另一方面,图2b是利用铆钉(rivet)62而固定侧壁的第二端部53和喷头的图,在将侧壁的第二端部53和喷头对准之后,钻出铆钉插入孔,在将铆钉插入到上述铆钉插入孔中之后,利用工具拉动铆钉内部的填隙件(shim),则铆钉内部的填隙件(shim)的末端部被拉动而将喷头固定于侧壁。
然而,在现有的铆钉型的情况下,铆钉插入孔因热膨胀而变大,因此存在铆钉脱落的问题。另外,在现有的铆钉型的情况下,若拉动铆钉则铆钉插入孔的末端变宽的结构,因此,在为了维修保养而去除铆钉的情况下存在铆钉插入孔继续变大的问题。
发明内容
(发明所要解决的问题)
本发明旨在解决上述的问题,其目的在于提供一种喷头及包括该喷头的基板处理装置,所述喷头利用对喷头和侧壁施加压力的配合单元而固定喷头和侧壁,从而即使配合单元所贯通的辅助槽的直径因热膨胀而变大,也通过配合单元的端部而防止配合单元脱落,因此能够防止侧壁从喷头脱落。
(解决问题所采用的措施)
旨在解决上述技术问题的本发明的一实施例的喷头,向基板处理装置内部的反应空间喷射工艺气体,该喷头通过侧壁而固定于上述基板处理装置的上部盖,所述喷头包括贯通上述喷头和上述侧壁并施加压力的配合单元,上述喷头的侧面包括用于通过上述配合单元而防止上述喷头与上述侧壁的脱离的一个以上的安装槽。
旨在解决上述技术问题的本发明的一实施例的包括喷头的基板处理装置包括:腔室,其提供用于基板处理工艺的反应空间;上部盖,其设置于上述腔室的上部以密封上述反应空间;基座,其设置于腔室的内部,用于支撑从外部供给的基板;喷头,其以与上述基座对置的方式设置于上述上部盖的下部;侧壁,其将上述喷头固定于上述上部盖;以及配合单元,其贯通上述喷头和上述侧壁并施加压力,上述喷头的侧面包括用于通过上述配合单元而防止上述喷头与上述侧壁的脱离的一个以上的安装槽。
(发明的效果)
根据本发明的喷头,利用配合单元而将喷头固定于侧壁,从而即使配合单元所贯通的辅助槽的直径因热膨胀而变大,也通过配合单元的端部而防止配合单元脱落,因此具有能够提高侧壁和喷头的配合力的优点。
另外,即使在进行维修保养作业的情况下,也不会发生配合单元所贯通的辅助槽的直径变大的问题,且具有只要切割配合单元的端部就能够容易地更换侧壁的效果。
附图说明
图1是现有技术的利用等离子体的基板处理装置的示意性剖视图。
图2a是示出现有的基板处理装置中利用销而固定侧壁和喷头的图。
图2b是示出现有的基板处理装置中利用铆钉而固定侧壁和喷头的图。
图3是本发明的包括喷头的基板处理装置的示意性剖视图。
图4是图3的本发明的喷头的角部的放大剖视图。
图5是图3的本发明的另一实施例的角部的放大剖视图。
图6a和图6b是用于说明喷头通过配合单元而固定于侧壁的原理的图。
图7是用于说明喷头通过配合单元而固定于侧壁的局部分解立体图。
具体实施方式
以下,将参照附图详细说明本发明的优选实施例如下。
图3是本发明的包括喷头的基板处理装置的示意性剖视图。图4是图3的本发明的喷头的角部的放大剖视图,图5是图3的本发明的另一实施例的角部的放大剖视图,图6a和图6b是用于说明喷头通过配合单元而固定于侧壁的原理的图。
参照图3至图6a和图6b而对本发明的通过桨锁而固定于侧壁的喷头进行说明。
本发明的喷头340向基板处理装置300内部的反应空间P喷射工艺气体,喷头340通过侧壁350而固定于上述基板处理装置300的上部盖320的下部。
上述喷头340包括中心部341和侧面部342,其中,在中心部341形成有向反应空间喷射工艺气体的多个气体喷射孔344,侧面部342用于固定侧壁350的第二端部。此时,俯视时,喷头340优选具有圆形或矩形形态。
上述侧壁350具备第一端部351、第二端部353以及连接部352。第一端部351通过螺栓351a而固定于上述基板处理装置300的上部盖320的下部,第二端部353固定于上述喷头340的侧面部342而支撑上述喷头340。连接部352的一端与上述第一端部351的一端连接,连接部352的另一端与第二端部353的一端连接。
就上述侧壁而言,第一端部351通过螺栓351a而固定于上部盖320的下部,第二端部353固定于上述喷头340的侧面部342而在上部盖320与喷头340之间提供反应气体扩散的空间。另外,在上部盖320与喷头340之间提供密封的空间而发挥防止反应气体向腔室310的侧壁扩散的作用。
此时,侧壁优选由具有柔韧性(flexibility)的结构形成,以使热膨胀或热收缩所产生的热应力最小化。
另一方面,配合单元360具备第一端部361、外壳362、内部填隙件(inner shim)363、突出端部364以及引出部365。在将配合单元360插入到辅助槽中之后,使用工具拉拽引出部365,则内部填隙件363和突出端部364被提拉,由此,外壳362部分被挤压而形成第二端部366。
作为配合单元,可以存在各种实施例,在本发明中作为其一个实施例以使用桨锁(oarlock)来进行说明,桨锁的结构是公知的一般结构,因此省略对其的详细说明。
为了通过配合单元360而将上述喷头340固定于侧壁350,喷头340的主体需要配合单元的第二端部366所能够形成的空间。
因此,本发明的喷头340的特征在于,在侧面部342的侧面包括配合单元360所能够插入的辅助槽342a和作为配合单元的第二端部366所能够形成的空间的安装槽342b。
将喷头340固定于侧壁350的过程如下。
首先,将侧壁350的第二端部353置放在喷头340的侧面部342的侧壁安装部342c上,并在第二端部353和喷头340的侧面部342钻出配合单元所能够贯通的辅助槽342a。
另外,使用T形切割器(T-cutter)或其它工具在喷头340的侧面部342的侧面形成作为配合单元的第二端部366所能够配置的空间的安装槽342b。
接着,在将配合单元360插入到辅助槽342a中之后,使用工具拉拽引出部365,则内部填隙件363和突出端部364被提拉,由此,外壳362部分被挤压而在安装槽342b中形成配合单元的第二端部366,由此,喷头340固定于侧壁350。
此后,在需要进行修理(repair)作业的情况下,使用T形切割器(T-cutter)而仅切割配合单元的第二端部366之后,从侧壁350分离喷头340,即可容易地进行修理作业。
因此,只要不是在基材中产生裂纹(crack)等的情况,就另具有能够延长喷头340的使用寿命的优点。
图4示出了本发明的一实施例的喷头,示出了在侧壁350的第二端部353置放在喷头340的侧面部342的侧壁安装部342c上的状态下配合单元贯通喷头340和侧壁350。另一方面,图5示出了本发明的另一实施例的喷头,示出了在侧壁350的第二端部353插入到喷头340的侧面部342的固定槽342d中的状态下配合单元贯通喷头340和侧壁350。
如图3所示,包括本发明的喷头的基板处理装置300包括腔室310、上部盖320、基座330、喷头340以及侧壁350。
腔室310提供用于基板处理工艺的反应空间。此时,腔室310的底面的一侧与用于使反应空间排气的排气口312连通。
上部盖320设置于腔室310的上部以密封反应空间,并发挥等离子体电极的作用。上部盖20的一侧通过电源电缆与RF(Radio Frequency,射频)电源324电连接。此时,RF电源324产生RF电力并将所产生的RF电力供给至作为等离子体电极的上部盖320。另外,上部盖320的中央部分与供给用于基板处理工艺的工艺气体的气体供给管326连通。
基座330设置于腔室310的内部并支撑从外部装载的基板S。这种基座330是与上部盖320对置的对置电极,基座330通过用于支撑该基座330的支撑轴332电性接地。此时,支撑轴332由密封支撑轴332和腔室310的下表面的波纹管334所包围。
喷头340以与基座330对置的方式设置于上部盖320的下部。在上述喷头340与上部盖320之间形成有气体缓冲空间342,从贯通上部盖320的气体供给管326供给的工艺气体供给至气体缓冲空间342。此时,工艺气体成为用于在基板S上形成规定的薄膜的源气体和反应气体所混合的形态而供给至气体缓冲空间342。这种喷头340通过与气体缓冲空间342连通的多个气体喷射孔344而向反应空间喷射工艺气体。
就侧壁350而言,第一端部351固定于上部盖320,第二端部352支撑喷头40,第一端部351和第二端部353通过连接部352相连接。
就图3所示的包括本发明的喷头的基板处理装置300而言,虽然其它结构与现有的利用等离子体的基板处理装置相同,但如上所述那样,特征在于具有喷头340通过配合单元360而固定于侧壁350的结构。
图7是用于说明喷头通过配合单元而固定于侧壁的局部分解立体图。
参照图7可知,在喷头340的侧面部342的侧面形成有多个辅助槽342a和多个安装槽342b,其中,安装槽342b是配合单元的第二端部所能够配置的空间。
此时,考虑到侧壁350与喷头340之间的配合力以及喷头自身的刚度,优选以适当的数量来设置辅助槽342a和安装槽342b。
如上所述,根据本发明的喷头,利用配合单元而将喷头固定于侧壁,从而即使配合单元所插入的辅助槽的直径因热膨胀而变大,也通过配合单元的第二端部而防止配合单元从辅助槽脱落的现象,因此能够提高侧壁和喷头的配合力,而且在进行维修保养作业时,只要切割配合单元的第二端部就能够更换侧壁,因此具有能够延长喷头的使用寿命的优点。
以上对本发明的优选实施例进行了详细的说明,但本发明的权利范围并不限定于此,基于所附的权利要求书中所定义的本发明的基本概念就能够以更为多样的实施例来具体实现本发明,而这些实施例也属于本发明的权利范围。
Claims (10)
1.一种喷头,向基板处理装置内部的反应空间喷射工艺气体,该喷头通过侧壁而固定于上述基板处理装置的上部盖,其特征在于,
所述喷头包括贯通上述喷头和上述侧壁并施加压力的配合单元,
上述喷头的侧面包括用于通过上述配合单元而防止上述喷头与上述侧壁的脱离的一个以上的安装槽。
2.根据权利要求1所述的喷头,其特征在于,
上述喷头的侧面进一步包括上述侧壁所能够插入的固定槽。
3.根据权利要求1或2所述的喷头,其特征在于,
在上述安装槽的底面形成有贯通上述喷头和上述侧壁的上述配合单元所能够插入的辅助槽。
4.根据权利要求1或2所述的喷头,其特征在于,
上述配合单元包括:
第一端部;以及,
第二端部,其与上述第一端部一起提供压力而固定上述侧壁和上述喷头。
5.根据权利要求4所述的喷头,其特征在于,
上述第一端部位于上述喷头外部,
上述第二端部位于上述安装槽的上部面。
6.根据权利要求1所述的喷头,其特征在于,
上述配合单元是桨锁。
7.根据权利要求1或2所述的喷头,其特征在于,
上述侧壁具有柔韧性,以使减小上述喷头的热膨胀或收缩所产生的应力。
8.一种基板处理装置,其特征在于,包括:
腔室,其提供用于基板处理工艺的反应空间;
上部盖,其设置于上述腔室的上部以密封上述反应空间;
基座,其设置于腔室的内部,用于支撑从外部供给的基板;
喷头,其以与上述基座对置的方式设置于上述上部盖的下部;
侧壁,其将上述喷头固定于上述上部盖;以及,
配合单元,其贯通上述喷头和上述侧壁并施加压力,
上述喷头的侧面包括用于通过上述配合单元而防止上述喷头与上述侧壁的脱离的一个以上的安装槽。
9.根据权利要求8所述的基板处理装置,其特征在于,
上述喷头的侧面进一步包括上述侧壁所能够插入的固定槽。
10.根据权利要求8或9所述的基板处理装置,其特征在于,
上述配合单元是桨锁。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190010858A KR102700366B1 (ko) | 2019-01-29 | 2019-01-29 | 샤워헤드 및 이를 포함하는 기판처리장치 |
KR10-2019-0010858 | 2019-01-29 | ||
PCT/KR2019/016913 WO2020159064A1 (ko) | 2019-01-29 | 2019-12-03 | 샤워헤드 및 이를 포함하는 기판처리장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113302729A true CN113302729A (zh) | 2021-08-24 |
CN113302729B CN113302729B (zh) | 2024-07-09 |
Family
ID=71842130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980088841.3A Active CN113302729B (zh) | 2019-01-29 | 2019-12-03 | 喷头及包括该喷头的基板处理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220098737A1 (zh) |
JP (1) | JP7546573B2 (zh) |
KR (1) | KR102700366B1 (zh) |
CN (1) | CN113302729B (zh) |
TW (1) | TWI809244B (zh) |
WO (1) | WO2020159064A1 (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100128795A (ko) * | 2009-05-29 | 2010-12-08 | 주식회사 테스 | 대면적 기판 처리 장치 |
KR20130027280A (ko) * | 2011-09-07 | 2013-03-15 | 엘아이지에이디피 주식회사 | 기판 처리장치 |
WO2014073806A1 (ko) * | 2012-11-08 | 2014-05-15 | Park Hyung Sang | 샤워헤드 및 이를 포함하는 박막 증착 장치 |
CN106257637A (zh) * | 2015-06-17 | 2016-12-28 | 细美事有限公司 | 紧固组件及具有其的基板处理装置 |
KR101696252B1 (ko) * | 2015-09-25 | 2017-01-13 | 주식회사 테스 | 기판처리장치의 샤워헤드 어셈블리 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2502267A (en) * | 1946-03-13 | 1950-03-28 | Robert L Mcpherson | Self-clinching fastener |
US5791850A (en) * | 1996-06-28 | 1998-08-11 | Lam Research Corporation | Vacuum compatible fastener and fastening system |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
JP2002194820A (ja) * | 2000-12-22 | 2002-07-10 | Akio Sudo | ボードアンカー |
JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
KR101063737B1 (ko) * | 2004-07-09 | 2011-09-08 | 주성엔지니어링(주) | 기판 제조장비의 샤워헤드 |
KR20060124813A (ko) * | 2005-05-26 | 2006-12-06 | 삼성전자주식회사 | 기판 가공 장치 |
TWI306782B (en) * | 2005-09-02 | 2009-03-01 | Applied Materials Inc | Suspension for showerhead in process chamber |
KR100718643B1 (ko) * | 2005-11-28 | 2007-05-15 | 주식회사 유진테크 | 샤워헤드의 체결구조 |
KR20070079835A (ko) * | 2006-02-03 | 2007-08-08 | 삼성전자주식회사 | 샤워헤드 및 이를 포함하는 기판 처리 장치 |
US20080087641A1 (en) * | 2006-10-16 | 2008-04-17 | Lam Research Corporation | Components for a plasma processing apparatus |
JP4842098B2 (ja) | 2006-11-13 | 2011-12-21 | 株式会社パワーシステム | 電気二重層キャパシタの製造方法 |
US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
US8187414B2 (en) * | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8573152B2 (en) * | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
KR101292817B1 (ko) * | 2011-07-25 | 2013-08-02 | 주성엔지니어링(주) | 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
KR20150073361A (ko) * | 2013-12-23 | 2015-07-01 | 엘지디스플레이 주식회사 | 대면적기판 처리장치 |
-
2019
- 2019-01-29 KR KR1020190010858A patent/KR102700366B1/ko active IP Right Grant
- 2019-12-03 JP JP2021543233A patent/JP7546573B2/ja active Active
- 2019-12-03 CN CN201980088841.3A patent/CN113302729B/zh active Active
- 2019-12-03 WO PCT/KR2019/016913 patent/WO2020159064A1/ko active Application Filing
- 2019-12-03 US US17/427,080 patent/US20220098737A1/en active Pending
-
2020
- 2020-01-21 TW TW109102225A patent/TWI809244B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100128795A (ko) * | 2009-05-29 | 2010-12-08 | 주식회사 테스 | 대면적 기판 처리 장치 |
KR20130027280A (ko) * | 2011-09-07 | 2013-03-15 | 엘아이지에이디피 주식회사 | 기판 처리장치 |
WO2014073806A1 (ko) * | 2012-11-08 | 2014-05-15 | Park Hyung Sang | 샤워헤드 및 이를 포함하는 박막 증착 장치 |
CN106257637A (zh) * | 2015-06-17 | 2016-12-28 | 细美事有限公司 | 紧固组件及具有其的基板处理装置 |
KR101696252B1 (ko) * | 2015-09-25 | 2017-01-13 | 주식회사 테스 | 기판처리장치의 샤워헤드 어셈블리 |
Also Published As
Publication number | Publication date |
---|---|
US20220098737A1 (en) | 2022-03-31 |
JP7546573B2 (ja) | 2024-09-06 |
TWI809244B (zh) | 2023-07-21 |
KR102700366B1 (ko) | 2024-08-30 |
JP2022518539A (ja) | 2022-03-15 |
TW202027862A (zh) | 2020-08-01 |
KR20200093754A (ko) | 2020-08-06 |
CN113302729B (zh) | 2024-07-09 |
WO2020159064A1 (ko) | 2020-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101137545B1 (ko) | 일체형 웨이퍼 트레이 | |
US6527908B2 (en) | Plasma process apparatus | |
US20090266488A1 (en) | Plasma Processing Apparatus | |
KR101062185B1 (ko) | 플라즈마 처리장치 | |
CN113302729B (zh) | 喷头及包括该喷头的基板处理装置 | |
KR20030066118A (ko) | 열팽창에 의한 변형을 최소화할 수 있는 샤워헤드형가스공급장치 | |
US20060201428A1 (en) | Shower head and method of fabricating the same | |
KR20160097688A (ko) | 샤워헤드 전극 어셈블리 | |
KR200238795Y1 (ko) | 에칭장치용 전극 어셈블리 | |
KR101044010B1 (ko) | 플라즈마 처리 장치 | |
KR200454189Y1 (ko) | 화학기상 증착 장치 | |
US20220275514A1 (en) | Substrate processing apparatus | |
KR20050116230A (ko) | 플라즈마 강화 화학기상증착 장치 | |
KR200266071Y1 (ko) | 플라즈마를 이용한 화학기상증착 장치 | |
KR101358741B1 (ko) | 플라즈마 처리장치용 챔버 및 그 제작방법 | |
KR200198433Y1 (ko) | 반도체 건식각장비용 전극조립체의 상부전극 지지구조 | |
KR200236764Y1 (ko) | 고주파 쉐이프트 윈도우 | |
KR101173647B1 (ko) | 챔버 | |
KR20240077629A (ko) | 페이스플레이트 제조방법 및 샤워헤드 제조방법 | |
KR20060135369A (ko) | 건식 식각 장치의 포커스 링 | |
KR20020078680A (ko) | 에칭장치용 전극 어셈블리 | |
KR20040017872A (ko) | 반도체 기판 식각 장치 | |
KR20120062673A (ko) | 화학기상증착장치의 가스공급유닛 및 이의 제조 방법 | |
KR20100013032A (ko) | 박막증착장치 | |
KR20090102256A (ko) | 플라즈마 처리장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |