TWI806083B - Electrical contact structure of electrical contactor and electrical connecting apparatus - Google Patents
Electrical contact structure of electrical contactor and electrical connecting apparatus Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
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Abstract
[課題] 可縮短在電性接觸子流通的導通路徑長,且使電性接觸子的導通部與電極部安定接觸。 [解決手段] 本發明之電性接觸子的電性接觸構造之特徵為:具備:在支持基板的其中一面形成開口的支持孔;被插通在支持孔,與被檢查體作電性接觸的電性接觸子;及設在支持孔的前述開口附近的電極部,電性接觸子係具有:具折曲部的非導通部、及設在非導通部的一方端部側的導通部者,折曲部係當導通部的一方端部與被檢查體作電性接觸時,導通部的另一方端部側以與電極部短路的方式作彎曲。 [Problem] The length of the conduction path that flows through the electrical contact can be shortened, and the conduction portion of the electrical contact can be stably contacted with the electrode portion. [Solution] The electrical contact structure of the electrical contact of the present invention is characterized by: having: a support hole with an opening formed on one side of the support substrate; an electrical contact; and an electrode portion provided near the aforementioned opening of the support hole, the electrical contact having: a non-conductive portion having a bent portion, and a conductive portion provided at one end of the non-conductive portion, The bending part bends so that the other end side of the conduction part is short-circuited with the electrode part when one end part of the conduction part comes into electrical contact with the object to be inspected.
Description
本發明係關於電性接觸子的電性接觸構造及電性連接裝置的技術。The invention relates to the technology of the electric contact structure and the electric connection device of the electric contact.
例如,在形成在半導體晶圓的複數半導體積體電路的電特性的檢查係使用作為電性連接裝置的探針卡。For example, a probe card as an electrical connection device is used for inspection of electrical characteristics of a plurality of semiconductor integrated circuits formed on a semiconductor wafer.
一般而言,探針卡係在絕緣基板的下表面配置複數電性接觸子(以下係稱為「接觸子」、「探針」等)而構成,探針卡係被安裝在檢查各積體電路(被檢查體)的檢查裝置。檢查時,探針卡的各接觸子被推壓在各積體電路的各電極,來檢查各積體電路的電特性。Generally speaking, the probe card is configured by disposing a plurality of electrical contacts (hereinafter referred to as "contacts", "probes", etc.) on the lower surface of the insulating substrate. An inspection device for electrical circuits (objects to be inspected). During inspection, each contact of the probe card is pushed against each electrode of each integrated circuit, and the electrical characteristics of each integrated circuit are inspected.
在作為電性連接裝置的探針卡係有相對被檢查體的各電極呈垂直地使各接觸子作電性接觸之被稱為垂直型探針卡者。此外,在垂直型探針卡所使用的電性接觸子係有例如彈簧型、及針型。Among the probe cards used as electrical connection devices, there are those called vertical type probe cards that electrically contact the contacts perpendicular to the electrodes of the object to be inspected. In addition, the electrical contacts used in the vertical probe card include, for example, spring type and pin type.
彈簧型的接觸子係在相對被檢查體呈垂直方向具有彈性,因此可對被檢查體的電極彈性地確實作接觸。The spring-type contact sub-system has elasticity in the vertical direction relative to the object under inspection, so it can elastically and surely make contact with the electrodes of the object under inspection.
針型的接觸子由於為線狀(棒狀),因此可對窄間距配置的被檢查體的電極確實地作電性接觸,惟難以使其以垂直方向具有彈性。Since the needle-type contactor is linear (rod-shaped), it can reliably make electrical contact with the electrodes of the object under inspection arranged at a narrow pitch, but it is difficult to make it elastic in the vertical direction.
因此,支持複數接觸子34的構造係如圖2所例示,使用:支持針型的各接觸子34的上部的上段板(頂板)43、與支持各接觸子34的下部的下段板(底板)41,來支持各接觸子34。在此,為了使其具有垂直方向的彈性,使其配罝成上段板(頂板)43的支持孔43A的位置、與下段板(底板)41的支持孔41A的位置在面方向相對偏離。藉由形成為如上所示之構造,使各接觸子34局部彎曲而使其以垂直方向具有彈性。Therefore, the structure system supporting
近年來,伴隨半導體積體電路的超微細化、超高集積化,對設在探針卡的電性接觸子(探針)係圖求對應半導體晶片上的電極面積的縮小化、墊間的間距的窄小化。此外,處於伴隨半導體積體電路的動作速度的高速化,輸出入銷的訊號頻率增加的傾向,對電性接觸子(探針)亦圖求對應高頻特性。In recent years, with the ultra-miniaturization and ultra-high integration of semiconductor integrated circuits, the electrical contacts (probes) system diagram of the probe card is required to correspond to the reduction of the electrode area on the semiconductor wafer and the gap between the pads. The narrowing of the spacing. In addition, with the increase in the operating speed of semiconductor integrated circuits, the signal frequency of the input and output pins tends to increase, and the corresponding high-frequency characteristics are also sought for electrical contacts (probes).
在專利文獻1及2係揭示檢查半導體積體電路的探針頭(或測試頭)。例如,在探針頭係設有收容複數接觸探針的複數導引孔。此外,使接觸探針彎曲成S字狀,俾以使其以垂直方向具有彈性。接觸探針係沿著第1端部與第2端部之間的長邊方向延伸存在,藉由第1端部、與和被檢查體的電極相接觸的第2端部所構成。此外,接觸探針係在第1端部與第2端部之間,構成非導通性的第1部分、與由前述第1部分至第2端部的第2部分。此外,在導引孔係設有導電部,使接觸探針的第2部分與導電部作電性連接而使其短路。
[先前技術文獻]
[專利文獻]
[專利文獻1] 國際公開第2018/108790號 [專利文獻2] 國際公開第2019/091946號 [Patent Document 1] International Publication No. 2018/108790 [Patent Document 2] International Publication No. 2019/091946
(發明所欲解決之問題)(Problem to be solved by the invention)
但是,如專利文獻1及2之記載技術所示,若欲對導引孔的導電部(電極部),使接觸探針的導電性的接觸部分作電性接觸,該接觸部位可能成為滑動接點,因此發生接觸探針的接觸部分及或導電部磨耗之虞,結果,接觸部位劣化,對高精度的檢查亦產生影響。However, as shown in the techniques described in
因此,圖求可縮短在電性接觸子流通的導通路徑長,且可使電性接觸子的導通部與電極部安定接觸的電性接觸子的電性接觸構造及電性連接裝置。 (解決問題之技術手段) Therefore, it is sought for an electrical contact structure and an electrical connection device of an electrical contact that can shorten the length of the conduction path that flows through the electrical contact, and that can make the conduction portion of the electrical contact and the electrode portion stably contact. (technical means to solve the problem)
為解決該課題,第1本發明之電性接觸子的電性接觸構造之特徵為:具備:(1)在支持基板的其中一面形成開口的支持孔;(2)被插通在支持孔,與被檢查體作電性接觸的電性接觸子;及(3)設在支持孔的前述開口附近的電極部,(4)電性接觸子係具有:具折曲部的非導通部、及設在非導通部的一方端部側的導通部者,(5)折曲部係當導通部的一方端部與被檢查體作電性接觸時,導通部的另一方端部側以與電極部短路的方式作彎曲。In order to solve this problem, the electrical contact structure of the electrical contact of the first present invention is characterized by: possessing: (1) a support hole with an opening formed on one side of the support substrate; (2) inserted into the support hole, An electrical contact that makes electrical contact with the object to be inspected; and (3) an electrode portion provided near the aforementioned opening of the support hole, (4) the electrical contact has: a non-conducting portion with a bent portion, and For the conduction part provided on one end side of the non-conduction part, (5) the bending part is that when one end of the conduction part is in electrical contact with the object to be tested, the other end side of the conduction part is connected to the electrode Bend in a short-circuit way.
第2本發明之電性連接裝置係具備支持複數電性接觸子的支持基板,且將被檢查體與檢查裝置之間作電性連接的電性連接裝置,其係具有:第1本發明之電性接觸子的電性接觸構造。 (發明之效果) The electrical connection device of the second invention is provided with a support substrate supporting a plurality of electrical contacts, and electrically connects the object to be inspected and the inspection device, and has: the first invention of the invention The electrical contact structure of the electrical contact. (Effect of Invention)
藉由本發明,可縮短在電性接觸子流通的導通路徑長,且可使電性接觸子的導通部與電極部安定接觸。With the present invention, the length of the conduction path flowing through the electrical contact can be shortened, and the conduction portion of the electrical contact can be stably contacted with the electrode portion.
(A)主要實施形態(A) Main implementation forms
以下一邊參照圖式,一邊詳加說明本發明之電性接觸子的電性接觸構造及電性連接裝置的實施形態。Hereinafter, the embodiments of the electrical contact structure and the electrical connection device of the electrical contact of the present invention will be described in detail while referring to the drawings.
(A-1)實施形態的構成 在本實施形態中,係例示利用本發明而適用在被安裝在進行形成在半導體晶圓上的複數半導體積體電路的電特性的檢查(例如通電檢查等)的檢查裝置(以下亦稱為「測試器」)的電性連接裝置的情形。 (A-1) Configuration of Embodiment In this embodiment, an inspection apparatus (hereinafter also referred to as ""electrical inspection""""""""""""""""""""""""""""""""""""""""""""" will be hereinafter"applied"to be applied to the inspection of the electrical characteristics of a plurality of semiconductor integrated circuits formed on a semiconductor wafer by using the present invention is exemplified. tester") electrical connection device situation.
在以下說明中,「被檢查體」係檢查裝置檢查電特性的對象物,表示例如積體電路、半導體晶圓等。「半導體晶圓」係具有在晶圓形成有電路圖案的複數積體電路,假想切割前的狀態。In the following description, the "object to be inspected" refers to an object to be inspected by an inspection device for electrical characteristics, and means, for example, an integrated circuit, a semiconductor wafer, or the like. A "semiconductor wafer" is a virtual state before dicing that has a plurality of integrated circuits with circuit patterns formed on the wafer.
「電性連接裝置」係具有與被檢查體的各電極作電性接觸的複數接觸子,將被檢查體與檢查裝置作電性連接。電性連接裝置係例如探針卡等,在本實施形態中,係例示垂直型探針卡的情形。"Electrical connection device" has a plurality of contacts that are in electrical contact with the electrodes of the inspected object, and electrically connects the inspected object to the inspection device. The electrical connection device is, for example, a probe card, and in this embodiment, a case of a vertical type probe card is exemplified.
「接觸子」係對被檢查體的電極作電性接觸的電性接觸子。接觸子係可適用例如探針,可適用以線狀構件所形成的針型的探針、以薄板的細幅構件所形成的探針等。在本實施形態中,係例示接觸子為全體以線狀構件所形成的針型的探針的情形。"Contact" refers to an electrical contact that makes electrical contact with the electrode of the object under inspection. For the contact subsystem, for example, probes, needle-type probes formed of linear members, probes formed of thin-plate thin members, and the like can be applied. In this embodiment, a case where the contact is a needle-type probe formed entirely of a linear member is exemplified.
「支持基板」係支持複數接觸子(電性接觸子)的板狀基板。支持基板係具有在其中一面形成開口的複數支持孔,且在支持基板的各支持孔被插通各接觸子(電性接觸子)來支持各接觸子。支持基板係例如可設為後述之探針支持體17、配線基板2等。A "supporting substrate" is a plate-like substrate that supports a plurality of contacts (electrical contacts). The support substrate has a plurality of support holes with openings formed on one side thereof, and contacts (electrical contacts) are inserted through each support hole of the support substrate to support each contact. The support substrate can be, for example, a
(A-1-1)電性連接裝置1的詳細構成 圖1係顯示實施形態之電性連接裝置1的構成的平面圖。圖3係顯示實施形態之電性連接裝置1的構成的正面圖。圖4係顯示實施形態之接觸子(探針)21的電性連接構造的構成的部分剖面圖。 (A-1-1) Detailed structure of electrical connection device 1 FIG. 1 is a plan view showing the structure of an electrical connection device 1 according to an embodiment. FIG. 3 is a front view showing the structure of the electrical connection device 1 of the embodiment. FIG. 4 is a partial cross-sectional view showing the configuration of the electrical connection structure of the contact (probe) 21 of the embodiment.
電性連接裝置1係具有:配線基板2、連接基板3、複數配線4、及探針組裝體5。The electrical connection device 1 has: a
配線基板2係形成為圓板狀的基板。在配線基板2的其中一面(例如上表面)側的中央部係形成有以該配線基板2的厚度方向(Z方向、板厚方向)貫穿基板的矩形的開口7。在配線基板2的其中一面(例如上表面),係沿著矩形開口7的一對對邊,整列形成有作為連接部的多數連接島部(land)9。此外,在配線基板2的其中一面(例如上表面)的外緣部係形成有與檢查裝置(測試器)的電氣電路相連接的複數測試器島部(測試器連接部)。各連接島部9與相對應的測試器島部8係與習知的電性連接裝置同樣地,經由配線基板2的導電路(未圖示)來作電性連接。The
連接基板3係藉由電性絕緣材料所形成,且安裝在配線基板的其中一面(例如上表面)側的大致中央部的構件。連接基板3係具有:被收容在開口7內的矩形平面形狀的矩形部11、及在矩形部11的其中一面(例如上表面)朝矩形部11的外緣突出的矩形的環狀凸緣12。連接基板3係矩形部11收容在配線基板2的開口7內,在開口7的緣部載置有環狀凸緣12的狀態下,藉由複數螺絲構件13,在配線基板2的其中一面(例如上表面)安裝有環狀凸緣12。The
在連接基板3的矩形部11係如圖1所示,形成有以基板的厚度方向(Z方向、板厚方向)貫穿基板的複數貫穿孔14。複數貫穿孔14的各個係對應作為被檢查體15的積體電路的電極16的位置而形成。As shown in FIG. 1 , a plurality of through
各配線4的一端部係被插入在連接基板3的各貫穿孔14。被插入在各貫穿孔14的各配線4的一端部的前端面係與探針組裝體5所支持的相對應的各探針21作電性連接。各配線4係可與相對應的各探針21直接連接,亦可透過導電路及端子而間接地與各探針21相連接。另一方面,各配線4的另一端部係與相對應的各連接島部9相連接。各探針21係透過各配線4而與各連接島部9相連接。因此,各探針21係經由與各連接島部9作電性連接的相對應的測試器島部8,而與檢查裝置(測試器)的電氣電路相連接。One end of each
探針組裝體5係安裝在連接基板3的另一面(例如下表面)側。探針組裝體5係具有支持複數探針21的探針支持體17。The
探針支持體17係以電性絕緣性構件所形成的板狀構件。探針支持體17係在該探針支持體17的另一面(例如下表面)18形成有開口,且朝向上方(亦即板厚方向、Z方向),具有收容複數探針21的各個的複數支持孔19。換言之,各支持孔19亦可謂為在探針支持體17的下表面18形成有開口的凹部。The
探針支持體17的各支持孔19係形成在被檢查體15的各電極16的位置所對應的位置。探針支持體17的支持孔19係以與被檢查體15的電極16的數量相同的數量形成。The support holes 19 of the
支持各探針21的各支持孔19的頂棚部192係支持位於探針21的第1端部(例如上端部)的被支持部51。例如,如圖4所例示,在支持孔19的頂棚部192係設有用以支持探針21的第1端部的孔部,且在該孔部插入探針21的第1端部,藉此可支持被收容在支持孔19的探針21。亦即,被支持在頂棚部192的探針21係下垂至支持孔19的內部,且被收容在該支持孔19,並且各探針21的第2端部側的導通部212的部分或全部(參照圖5)以比支持孔19的下表面18更為下方突出而設。The
其中,在支持孔19支持探針21的方法並未特別限定。例如,亦可在支持孔19的頂棚部192鑽出的孔插入探針21的被支持部51之後,以接著材等固定。此外,各支持孔19亦可為剖面為圓形或橢圓形的孔,亦可為剖面為正方形或長方形或多角形的孔。However, the method of supporting the
在探針支持體17的下表面18,係在各支持孔19的近旁設有各電極端子20。在此,如後所述,在各探針21的第1端部側係形成有具有折曲部54的非導通導引部211(參照圖5)。被檢查體15檢查時,若各探針21與被檢查體15的電極16彼此接觸,被支持在各支持孔19的各探針21作彈性變形(例如撓曲等)。On the
各電極端子20係藉由接觸荷重,與經變形的各探針21的導通部212(參照圖5)作電性接觸。換言之,各電極端子20係與經變形的各探針21的導通部212作電性連接的端子。Each
此外,各電極端子20係與形成在探針支持體17的各導電路22相連接。各導電路22係在各電極端子20與相對應的各配線4之間流通電訊號的部分。因此,各探針21的導通部212係經由各電極端子20及導電路22,與相對應的各配線4作電性連接。In addition, each
其中,導電路22亦可形成在探針支持體17的基板內部。此外,若形成為例如由多層構造基板所形成的探針支持體17,導電路22的部分亦可形成在探針支持體17的面方向(亦即XY平面上)。Wherein, the
在此,一邊比較實施形態中的複數探針21的支持構造、與圖2所例示的習知的複數接觸子(探針)34的支持構造一邊說明。Here, the support structure of the plurality of
圖2中的習知的探針支持構造係使用支持各接觸子34的上部的上段板(頂板)43、及支持各接觸子34的下部的下段板(底板)41,來支持大致S字狀的各接觸子34。The conventional probe support structure in FIG. 2 uses an upper plate (top plate) 43 supporting the upper part of each
相對於此,實施形態中的複數探針支持構造至少未設置下段板(底板)41。如後所述,實施形態的探針21係由非導通導引部211擔負彈性功能。On the other hand, at least the lower plate (bottom plate) 41 is not provided in the plural probe supporting structure in the embodiment. As will be described later, in the
因此,在實施形態中,係可使探針組裝體5的厚度方向(Z方向)的長度,比習知的探針組裝體的厚度方向(Z方向)為更短。換言之,被檢查體15檢查時,可縮短經由探針21而在被檢查體15的電極16與配線4之間流通的電流的導電路的長度。結果,可使檢查精度提升。此外,亦可抑制探針組裝體5的成本。Therefore, in the embodiment, the length in the thickness direction (Z direction) of the
此外,圖2中的習知的探針支持構造係被配置成上段板(頂板)43的支持孔43A的位置、與下段板(底板)41的支持孔41A的位置在面方向相對偏離。In addition, the conventional probe support structure in FIG. 2 is arranged so that the position of the
相對於此,實施形態中的探針支持構造係被支持在探針支持體17的支持孔19的探針21由支持點朝垂直方向(Z方向)延伸作配置。On the other hand, in the probe supporting structure in the embodiment, the
因此,藉由形成為實施形態的探針支持構造,變得容易控制接觸於作為被檢查體15的半導體晶圓上的電極16的探針21的對位,且可使對位精度提升。Therefore, by forming the probe supporting structure of the embodiment, it becomes easy to control the alignment of the
其中,在本實施形態中,係例示在探針組裝體5的探針支持體17支持複數探針21的情形。但是,並非限定於該例,亦可在配線基板2的下表面設置與探針支持體17的各支持孔19同樣的構造,使設在配線基板2的各支持孔19支持各探針21。此時,上段板(頂板)43亦變得不需要設置。However, in this embodiment, a case where a plurality of
(A-1-2)探針21的構成
圖5(A)係顯示實施形態之探針21的構成的側面圖,圖5(B)係顯示實施形態之探針21的構成的正面圖。其中,圖5(A)及圖5(B)所例示的探針21的尺寸、線徑、長度及折曲的程度等係作強調顯示。
(A-1-2) Configuration of the
探針21係具有:具折曲部54的非導通導引部211、及設在非導通導引部211的一方端部側的導通部212所形成。探針21係以該探針21全體而言,可形成為例如由絕緣材料及導電性金屬的細線等所形成的針型的接觸子。其中,探針21並非限定於線狀構件,亦可例如由絕緣材料及導電性金屬的幅長小的薄板狀構件所形成。在本實施形態中,係例示探針21為由線狀構件所形成者。The
探針21的線徑(探針21的直徑)或全長並未特別限定,可按照作為檢查對象的半導體晶圓的電極16的尺寸等來適當決定。例如,可形成為探針21的線徑為幾十μm程度,長度為數mm程度。The wire diameter (diameter of the probe 21 ) and the overall length of the
探針21的非導通導引部211係由絕緣性的合成樹脂材料等絕緣性材料所形成者。非導通導引部211係具有使探針21全體以上下方向(Z方向)具有彈性的彈性功能。此外,非導通導引部211係作為支持探針21的導通部212的導電部支持構件來發揮功能。換言之,非導通導引部211係具有作為具彈性的導電部支持構件的功能。The
以絕緣性材料的線狀所形成的非導通導引部211係具有:被支持在收容該探針21的支持孔19的被支持部51;及沿著該探針21的長邊方向,朝前述被支持部51的下方延伸的下方部分。前述下方部分係與被支持部51一體相連。The
在非導通導引部211的下方部分的大致中央部,藉由例如彎曲加工,形成有使該下方部分折曲的折曲部54。例如,被檢查體15檢查時,探針21的下端部(導通部212的下端部)對被檢查體15的電極16作接觸,對探針21作用接觸荷重。此時,因在該下方部分形成有折曲部54,以折曲部54為起點,探針21全體變形,探針21大幅彎曲,且探針21全體具有上下方向(Z方向)的彈性。A
其中,在圖5(A)中係顯示大幅折曲的折曲部54,惟亦可在接觸時,以折曲部54為起點,探針21可變形的程度的折曲。折曲部54亦可以彎曲加工來形成,亦可由於容易折曲,因此折曲部54的線徑小於非導通導引部211的線徑。Here, in FIG. 5(A) , the bending
在此,在非導通導引部211的下方部分之中,將由前述被支持部51至折曲部54的部分稱為第1導引部52,將由折曲部54至非導通導引部211的下端部稱為第2導引部53。Here, among the lower part of the
探針21的導通部212係設在非導通導引部211的第2導引部53的下端部。導通部212係由導電性材料所形成。導通部212亦可由例如銅、銅合金、鈹銅合金等金屬、例如彈性體等具導電性的橡膠材料、具導電性的合成樹脂材料等所形成。此外,亦可在非導通導引部211的下端部的表面施行鍍敷加工等,來形成導通部212。在本實施形態中,係例示導通部212係大概由導電性金屬細線所形成的情形。The
設在非導通導引部211的導通部212亦可例如以接著材等接著在非導通導引部211的第2導引部53而設。The
導通部212係具有:與探針支持體17的另一面(例如下表面)的電極端子20相接觸的第2接觸部56、及與被檢查體15的電極16相接觸的第1接觸部55。換言之,導通部212係具有:經由電極端子30及導電路22而與配線4作配線連接的第2接觸部56、及對被檢查體15的電極16作電性接觸的第1接觸部55。The
導通部212的第2接觸部56係當受到接觸荷重的該探針21作彈性變形時,對電極端子20作接觸。第2接觸部56的形狀並未特別限定,亦可形成為例如具有圓部的倒三角柱或倒三角錐等形狀。此時,第2接觸部56的上表面部561或其周邊部分、與電極端子20的接觸面積變寬,電性接觸性成為良好。The
導通部212的第1接觸部55係由第2接觸部56朝向下方延伸的線狀部分。形成為線狀的第1接觸部55的下端部551與被檢查體15的電極16相接觸。其中,將第1接觸部55的下端部551亦稱為與電極16相接觸的「接觸部」。The
第1接觸部55係與第2接觸部56同樣地,例如由銅、銅合金、鈹銅合金等導電性材料所形成。第2接觸部56與第1接觸部55亦可以同一材料而一體形成。藉由以同一材料一體形成,導通特性成為良好,且可高精度檢查。The
探針21係在非導通導引部211的下端部設有導通部212。如後所述,藉由縮短導通部212的長度,可縮短被檢查體15的檢查時的導通路徑的長度。例如,藉由縮短第2接觸部56及具有第2接觸部的導通部212的長度,可縮短導通路徑。The
由例如絕緣性的合成樹脂材料所形成的非導通導引部211係容易加工該非導通導引部211的形狀、長度、線徑等。因此,亦可不取決於導通部212的長度,而使非導通導引部211的長度或形狀變形。The
例如,亦可在將探針21的導通部212的長度設為預定的長度,而欲加大使探針21接觸被檢查體15的電極16的針壓時,係使非導通導引部211的長度相對較短,另一方面,欲減小前述針壓時,則係使非導通導引部211的長度相對較長。For example, when the length of the
(A-1-3)探針21的電性接觸構造
圖6(A)係顯示非接觸時的探針21的狀態的圖,圖6(B)係顯示接觸時的探針21的狀態的圖。其中,圖6(A)及圖6(B)所例示的探針21的尺寸、線徑、長度、及折曲/彎曲的程度等係被強調顯示。
(A-1-3) Electrical Contact Structure of
圖6(A)係顯示探針21的非導通導引部211之中,被支持部51被支持在支持孔19的頂棚部192的狀態。FIG. 6(A) shows a state where the supported
非接觸時的探針21係由被支持部51的位置朝垂直下方延伸設置。形成在導通部212的第1接觸部55的下端部551係大概位於由作為探針21的支持點的被支持部51的位置以垂直方向拉出的線C上或線C附近。The
以往係如圖2、專利文獻1及2所例示,使其配置形成為S字狀的探針。因此,探針的上部位置、與接觸被檢查體的電極的探針的下端部的位置偏離。相對於此,如本實施形態所示,藉由使下端部551位於通過被支持部51的位置的垂線C上,被支持部51的位置與下端部551的位置相整合(一致或大致一致)。因此,藉由本實施形態,變得容易控制探針21相對被檢查體15的電極16的對位,亦提升對位精度。Conventionally, as shown in FIG. 2 and
此外,非接觸時的探針21較佳為無須接觸支持孔19的內壁而被收容。在非導通導引部211係形成折曲部54,惟較佳為折曲部54未接觸支持孔19的內壁而在支持孔19收容探針21。換言之,在支持孔19中,被支持的被支持部51的位置並不需要為支持孔19的頂棚部192的中心位置。以折曲部54不接觸支持孔19的內壁的方式,被支持部51亦可支持在支持孔19的頂棚部192。In addition, it is preferable that the
其中,雖然有探針21的彈性變弱的可能性,惟非接觸時的探針21的折曲部54等亦可接觸支持孔19的內壁,作為變形例。Here, although there is a possibility that the elasticity of the
此外,非接觸時的探針21係以導通部212由探針支持體17的下表面18突出的方式被收容在支持孔19。例如,以導通部212中的第2接觸部56的位置位於比探針支持體17的下表面18更為下方的方式,探針21係被支持在支持孔19。此係基於探針21接觸時,探針21作彈性變形時,第2接觸部56與電極端子20作電性接觸之故。In addition, the
圖6(B)係顯示探針21的下端部551對被檢查體15的電極16作接觸,且在探針21作用有接觸荷重時的探針21的狀態。
FIG. 6(B) shows the state of the
探針21的下端部551接觸電極16而對探針21作用接觸荷重時,探針21會變形。亦即,形成在非導通導引部211的折曲部54成為起點,線狀的非導通導引部211加強彎曲,且折曲部54接觸支持孔19的內壁。藉由折曲部54與支持孔19的內壁面的接觸,朝向支持孔19的軸(例如,亦可設為來自被支持部51的垂線C),使位於導通部212的另一方端部的第2接觸部56移動。接著,與此幾乎同時地,在探針21的導通部212中,與電極16相接觸的下端部551成為起點,藉由接觸荷重,線狀的第1接觸部55作彎曲。藉此,導通部212的第2接觸部56移動至上方,導通部212的第2接觸部56與電極端子20相接觸。
When the
亦即,折曲部54係位於導通部212的一方端部的下端部551電性接觸於被檢查體15的電極16時,以彎曲成位於導通部212的另一方端部側的第2接觸部56與電極端子20短路的方式發揮功能。
That is to say, when the
此外,此時,被支持在支持孔19的探針21係藉由接觸電極16的接觸點、與接觸支持孔19的內壁的接觸點予以支持,因此可使探針21的姿勢安定化。在探針21的姿勢呈安定的狀態下,第2接觸部56對電極端子20作接觸,因此可抑制第2接觸部56對電極端子20的滑動。結果,可抑制極端子20與第2接觸部56的磨耗,可抑制接觸部位的劣化,亦可提升檢查精度。
In addition, at this time, the
以下說明在圖6(B)的接觸時的探針21的狀態下,進行被檢查體15的檢查的情形。
Next, a case where the inspection of the
在探針21的導通部212中,第1接觸部55的下端部551與被檢查體15的電極16作電性接觸,並且第2接觸部56與電極端子20作電性接觸。因此,電訊號流通的導通路徑係成為第1接觸部55的下端部551接觸電極16的接觸點、與第2接觸部56接觸電極端子20的接觸點之間的路徑,可比習知更縮短導通路徑。
In the
例如,伴隨作為被檢查體15的積體電路的動作速度的高速化,對探針卡係圖求使其對應被檢查體15的高頻特性。若被使用在檢查的探針21的長度變長,由此電抗成分變大,尤其可能對高頻特性的檢查精度產生影響。
For example, as the operating speed of an integrated circuit as the
藉由本實施形態,藉由使用由非導通導引部211、與長度短的導通部212所形成的探針21,由於導通路徑變短,因此可使檢查精度提升。
According to this embodiment, by using the
(A-2)實施形態的變形例 (A-2) Modified example of the embodiment
以下一邊參照圖示,一邊說明上述實施形態之變形例。 Hereinafter, modifications of the above-mentioned embodiment will be described with reference to the drawings.
(A-2-1)圖7(A)係顯示變形實施形態中的非接觸時的探針21的狀態的圖,圖7(B)係顯示變形實施形態中的接觸時的探針21的狀態的圖。
(A-2-1) FIG. 7(A) is a diagram showing the state of the
在上述之實施形態中,係例示電極端子20被設在探針支持體17的下表面18的情形,在圖7(A)及圖7(B)中係例示與導電路22相連接的電極端子20設在探針支持體17的支持孔19的內壁表面的情形。例如,此時亦可在接觸時,在加強彎曲的探針21的第2接觸部56與支持孔19的內壁相接觸的內壁表面設置電極端子20。In the above-mentioned embodiment, the case where the
其中,在圖7(A)及圖7(B)中,係例示在收容探針21的支持孔19的內壁之中,在接觸時探針21的第2接觸部56所接觸的支持孔19的內壁的一部分設置電極端子20的情形。但是,例如,亦可遍及支持孔19的內壁的全周設置以Z方向為預定幅長的電極端子20。此外,例如,亦可在支持孔19的內壁的全表面設置電極端子20。Wherein, in Fig. 7 (A) and Fig. 7 (B), among the inner walls of the
藉由形成為如上所示之構造,可將由探針支持體17的下表面18朝向下方突出的探針21的部分(亦即導通部212的線狀的第1接觸部55)的長度更為縮短。此外,可更加加大收容探針21的支持孔19的徑(直徑)。因此,容易在支持孔19收容探針21。By forming the structure as above, the length of the portion of the
(A-2-2)將其他變形實施形態例示於圖8。圖8(A)係顯示變形實施形態中的非接觸時的探針21的狀態的圖,圖8(B)係顯示變形實施形態中的接觸時的探針21的狀態的圖。(A-2-2) An example of another modified embodiment is shown in FIG. 8 . FIG. 8(A) is a diagram showing the state of the
在圖8(A)及圖8(B)中,亦可在探針支持體17中,將支持孔19的開口端部的部分形成切口,在該切口部(斜面)191的部分表面或全表面設置與導電路22相連接的電極端子20。In FIG. 8(A) and FIG. 8(B), in the
例如,亦可在設在支持孔19的開口端部的斜面亦即切口部191的表面、與和切口部191相連的支持孔19的內壁表面之二者或任一者設置電極端子20。此時亦可在支持孔19的內壁的全面,設置與導電路22相連接的電極端子20。For example, the
其中,切口部191亦可設在例如支持孔19的大致圓形的開口端部的全周。換言之,亦可對支持孔19的開口端部,設置加工成愈朝向Z方向之上而直徑愈細的錐狀的切口部191。However, the
藉由形成為如上所示之構造,接觸時,探針21的第2接觸部56與電極端子20的接觸性成為良好,且第2接觸部56與電極端子20的接觸面積亦變更大。結果,檢查精度提升。With the structure as above, the contact property between the
(A-2-3)將另外其他變形實施形態例示於圖9。圖9(A)係顯示變形實施形態中的非接觸時的探針21的狀態的圖,圖9(B)係顯示變形實施形態中的接觸時的探針21的狀態的圖。(A-2-3) Another modification example is shown in FIG. 9 . FIG. 9(A) is a diagram showing the state of the
在圖9(A)及圖9(B)中,係例示探針支持體17的支持孔19對作為被檢查體15的半導體晶圓呈斜向而設的情形。亦即,例示設置對Z軸的垂直方向具有預定的傾斜的支持孔19,且探針21亦相應支持孔19的傾斜而以斜向予以支持的情形。In FIG. 9(A) and FIG. 9(B), the case where the
此時,支持孔19的內壁面亦傾斜。另一方面,在探針支持體17內係設有垂直方向的導電路22。因此,亦可探針支持體17內的垂直方向的導電路22與支持孔19交叉,且將呈現在支持孔19的內壁的表面的導電路22的部分作為電極端子20。在圖9(A)及圖9(B)中,係例示遍及由支持孔19呈傾斜的內壁面的下端部,至支持孔19的內壁的中央部附近的大範圍,設置電極端子20的情形。At this time, the inner wall surface of the
藉由形成為如上所示之構造,接觸時,探針21的第2接觸部56與電極端子20的接觸性成為良好,第2接觸部56與電極端子20的接觸面積亦變更大。結果,檢查精度提升。With the structure as above, the contact property between the
(A-3)實施形態的效果
如以上所示,藉由實施形態,探針21具有非導通導引部211與導通部212而形成,被支持在支持孔19的探針21因接觸荷重而變形,藉此,導通部212的第2接觸部56接觸支持孔19附近的電極端子20。因此,可縮短經由探針21而在被檢查體15的電極16與電極端子20之間流通的電流的導通路徑。結果,可使被檢查體15的電特性的檢查精度提升。
(A-3) Effects of Embodiment
As mentioned above, according to the embodiment, the
此外,藉由實施形態,使探針21接觸被檢查體15的電極16的接觸時,探針21以形成在非導通導引部211的折曲部54為起點而變形。藉由折曲部54接觸支持孔19的內壁的接觸點、與下端部551接觸電極16的接觸點,探針21的姿勢呈安定。因此,可抑制第2接觸部56對電極端子20的滑動及磨耗。In addition, according to the embodiment, when the
(B)其他實施形態 在上述之實施形態中,亦提及各種變形實施形態,惟本發明亦可適用於以下之變形實施形態。 (B) Other implementation forms In the above-mentioned embodiments, various modified embodiments are also mentioned, but the present invention is also applicable to the following modified embodiments.
(B-1)本發明之電性接觸子(探針)並非限定於上述實施形態中所說明的構成。例如,亦可適用於圖10(A)所例示的探針21A的構成。(B-1) The electrical contacts (probes) of the present invention are not limited to the structures described in the above embodiments. For example, it can also be applied to the configuration of the
圖10(A)係顯示變形實施形態之探針21A的構成的構成圖,圖10(B)係顯示變形實施形態的接觸時的探針21A的狀態的圖。FIG. 10(A) is a structural diagram showing the structure of the
在圖10(A)中,探針21A係具有細線或細幅板狀構件的非導通導引部211A、及細線或細幅板狀構件的導通部212A而形成。In FIG. 10(A), the
導通部212A係由非導通導引部211A的大致中央部遍及非導通導引部211A的下端部而重疊形成,導通部212A的下端部比非導通導引部211A的下端部更朝下方突出。The
例如,亦可在作為細幅板狀構件的非導通導引部211A的其中一面(圖10(A)的左側面),形成導通部212A。導通部212A亦可為細幅板狀構件。此時,細幅板狀的導通部212A的幅長亦可與非導通導引部211A的幅長相同、或稍小。For example, the
非導通導引部211A係由上具有:被支持在支持孔19的被支持部51A、及支持部58、第1導引部52A、第2導引部53A、折曲部54A。另一方面,導通部212A係由上具有:被導引部57、第2接觸部56A、第1接觸部55A。第1接觸部55A的下端部551A與被檢查體15的電極16相接觸。The
非導通導引部211A的第1導引部52A、折曲部54A及第2導引部53A係與導通部212A的被導引部57、第2接觸部56A及第1接觸部55A相重疊。The
此外,折曲部54A係形成在非導通導引部211A與導通部212A相重疊的部分。伴隨折曲部54A的折曲,導通部212A亦折曲,該導通部212A的折曲部分形成為第2接觸部56A。In addition, the bending
因此,如圖10(B)所示,接觸時,探針21A的下端部551A接觸電極16,若作用接觸荷重時,非導通導引部211A的折曲部54A成為起點,探針21A呈變形。Therefore, as shown in FIG. 10(B), during contact, the
此時,位於與折曲部54A相對應的位置的第2接觸部56A與位於支持孔19的內壁的電極端子20相接觸,並且非導通導引部211A的支持部58彎曲而接觸支持孔19的內壁。At this time, the
此時,亦由於被支持在支持孔19的探針21A係藉由接觸電極16的接觸點、與接觸支持孔19的內壁的接觸點(第2接觸部56A、支持部58的接觸點58A)予以支持,因此可使探針21A的姿勢安定化。At this time, also because the
亦即,在探針21A的姿勢呈安定的狀態下,第2接觸部56A對電極端子20作接觸,因此可抑制第2接觸部56A對電極端子20的滑動。結果,可抑制電極端子20與第2接觸部56A的磨耗,可抑制接觸部位的劣化,亦可提升檢查精度。That is, since the
其中,在圖10(B)中係例示電極端子20設在支持孔19的內壁表面的情形。但是,電極端子20亦可如圖6(A)及圖6(B)所例示設在探針支持體17的下表面18,或者亦可如圖8(A)及圖8(B)所例示設在切口部191及或支持孔19的內壁面。However, FIG. 10(B) exemplifies the case where the
(B-2)在上述之實施形態中,係例示供探針21作配線連接之用的電極端子設在支持孔19附近或支持孔19的內壁的情形。電極端子20的位置若為在探針21因接觸荷重而變形時,可與第2接觸部56相接觸的位置即可,並非為限定於上述之實施形態者。(B-2) In the above-mentioned embodiment, the case where the electrode terminal for wiring connection of the
(B-3)在上述之實施形態中,係例示探針21的非導通導引部211具有折曲部54的情形,惟設在非導通導引部211的折曲部54的數量並非侷限於1個,亦可為複數個(例如2個以上)。(B-3) In the above-mentioned embodiment, the case where the
1:電性連接裝置
2:配線基板
3:連接基板
4:配線
5:探針組裝體
7:開口
8:測試器島部
9:連接島部
11:矩形部
12:環狀凸緣
13:螺絲構件
14:貫穿孔
15:被檢查體
16:電極
17:探針支持體
18:探針支持體的下表面
19:支持孔
191:切口部
192:頂棚部
20:電極端子
21及21A:電性接觸子(探針)
211及211A:非導通導引部
212及212A:導通部
22:導電路
30:電極端子
34:接觸子(探針)
41:下段板(底板)
41A:支持孔
43:上段板(頂板)
43A:支持孔
51及51A:被支持部
52及52A:第1導引部
53及53A:第2導引部
54及54A:折曲部
55及55A:第1接觸部
551:下端部
56及56A:第2接觸部
561:上表面部
57:被導引部
58:支持部
58A:接觸點
C:線(垂線)
1: Electrical connection device
2: Wiring board
3: Connect the substrate
4: Wiring
5: Probe assembly
7: opening
8: Tester island
9: Connecting to the island
11: Rectangular part
12: ring flange
13: screw components
14: Through hole
15: Subject to be inspected
16: electrode
17: Probe support
18: The lower surface of the probe support
19: Support hole
191: Incision
192: ceiling part
20:
[圖1]係顯示實施形態之電性連接裝置的構成的平面圖。 [圖2]係顯示習知的接觸子的電性連接構造的構成的構成圖。 [圖3]係顯示實施形態之電性連接裝置的構成的正面圖。 [圖4]係顯示實施形態之接觸子的電性連接構造的構成的部分剖面圖。 [圖5]係顯示實施形態之探針的構成的構成圖。 [圖6]係顯示非接觸時與接觸時的探針的狀態的圖。 [圖7]係顯示變形實施形態之接觸子的電性連接構造的構成的部分剖面圖(其1)。 [圖8]係顯示變形實施形態之接觸子的電性連接構造的構成的部分剖面圖(其2)。 [圖9]係顯示變形實施形態之接觸子的電性連接構造的構成的部分剖面圖(其3)。 [圖10]係顯示變形實施形態之探針的構成與接觸子的電性連接構造的構成的構成圖。 [FIG. 1] It is a plan view which shows the structure of the electrical connection apparatus of an embodiment. [FIG. 2] It is a structural diagram showing the structure of the electrical connection structure of the conventional contact. [ Fig. 3 ] is a front view showing the structure of the electrical connection device of the embodiment. [ Fig. 4 ] is a partial cross-sectional view showing the configuration of the electrical connection structure of the contact according to the embodiment. [ Fig. 5 ] is a structural diagram showing the structure of the probe of the embodiment. [ Fig. 6] Fig. 6 is a diagram showing states of the probes in the non-contact state and in the contact state. [ Fig. 7 ] is a partial cross-sectional view (Part 1) showing the structure of the electrical connection structure of the contact in the modified embodiment. [ Fig. 8 ] is a partial cross-sectional view (Part 2) showing the structure of the electrical connection structure of the contact in the modified embodiment. [ Fig. 9 ] is a partial cross-sectional view (Part 3) showing the structure of the electrical connection structure of the contact in the modified embodiment. [ Fig. 10 ] is a structural diagram showing the structure of the probe and the structure of the electrical connection structure of the contact in the modified embodiment.
3:連接基板 3: Connect the substrate
4:配線 4: Wiring
5:探針組裝體 5: Probe assembly
14:貫穿孔 14: Through hole
15:被檢查體 15: Subject to be inspected
16:電極 16: electrode
17:探針支持體 17: Probe support
18:探針支持體的下表面 18: The lower surface of the probe support
19:支持孔 19: Support hole
192:頂棚部 192: ceiling part
20:電極端子 20: Electrode terminal
21:電性接觸子(探針) 21: Electrical contacts (probes)
22:導電路 22: conductive circuit
Claims (9)
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JP2020140916A JP7523994B2 (en) | 2020-08-24 | Electrical contact structure of electrical contact and electrical connection device | |
JP2020-140916 | 2020-08-24 |
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TW202215056A TW202215056A (en) | 2022-04-16 |
TWI806083B true TWI806083B (en) | 2023-06-21 |
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KR (1) | KR102534435B1 (en) |
CN (1) | CN114088997A (en) |
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JP2022036615A (en) | 2022-03-08 |
CN114088997A (en) | 2022-02-25 |
TW202215056A (en) | 2022-04-16 |
KR102534435B1 (en) | 2023-05-26 |
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