JP6855221B2 - Electrical connection device and probe support - Google Patents

Description

The present invention relates to an electrical connection device and a probe support used for electrical inspection of an object to be inspected.

A large number of integrated circuits built into a semiconductor wafer are generally subjected to an electrical inspection to see if they perform as specified before being cut and separated from the wafer. As a device used for such an electrical inspection, there is an electrical connection device provided with a plurality of probes.

Further, this type of electrical connection device is provided with a probe support having a plurality of guide plates arranged at intervals in the vertical direction, and a part of the guide holes formed in the plurality of guide plates is curved. Some have a probe penetrated (see, for example, Patent Document 1).

In such an electrical connection device, when the tip of the probe extending downward from the probe support comes into contact with the object to be inspected, the tip of the probe is pushed upward by the object to be inspected. At this time, the probe is greatly curved while sliding on the wall surface of the guide hole. Then, the curved probe is electrically connected to the inspected object while being pressed against the inspected object by an appropriate pressing force. As a result, the probe substrate and the object to be inspected are electrically connected via the probe, and the electrical inspection is performed.

By the way, in order to carry out a more reliable electrical inspection, it is preferable to reduce signal noise, impedance of the conductive path, and the like. Therefore, electronic components such as capacitors, terminating resistors, ICs, and diodes may be connected in the conductive path between the object to be inspected and the probe substrate. Such electronic components are generally arranged on a probe substrate (see, for example, Patent Document 2).

Jikkenhei 7-29838 Gazette Japanese Unexamined Patent Publication No. 2014-74716

Here, in order to carry out a highly reliable electrical inspection by utilizing the functions of the electronic component, the electronic component must be brought closer to the object to be inspected and electrically connected, that is, the electronic component and the tip of the probe are connected. It is preferable to make the conductive path of the above as short as possible.

For this reason, in the prior art, the conductive path between the electronic component and the tip of the probe has been shortened by taking measures such as shortening the total length of the probe while making the thickness of the probe support thin. It cannot be said that the user's demand for high electrical inspection is fully met, and further improvement is required.

The present invention has been made in view of such a problem, and an object of the present invention is to provide an electrical connection device and a probe support capable of performing a more reliable electrical inspection.

In order to achieve the above object, the first feature of the electrical connection device according to the present invention is a probe that electrically connects the first contact target and the second contact target, and the probe from the first contact target. An electrical connection device including a probe support for guiding toward the second contact target, wherein the probe support includes a first guide plate having a first guide hole through which the probe is inserted, and the first guide plate. A second guide plate, which is arranged at a distance from the guide plate on the second contact target side and has a second guide hole through which the probe is inserted, and an electronic component arranged in the second guide plate are provided. The second guide plate has a hole in the hole wall of the second guide hole that electrically connects to the probe while sliding with the probe when the probe is pushed in by contact with the second contact object. A wall conductive film is formed, and the electronic component is electrically connected to the probe via the hole wall conductive film.

The second feature of the electrical connection device according to the present invention is related to the above feature, and the probe has a curved portion that curves between the first guide plate and the second guide plate.

The third feature of the electrical connection device according to the present invention relates to the above feature, and the electronic component is arranged in a shielding chamber formed between the second guide plate and the first guide plate. It is in.

The fourth feature of the electrical connection device according to the present invention is related to the above feature, and the probe includes a first probe and a second probe arranged within a predetermined distance from the electronic component, and the first probe is provided. The two guide plates have, as the hole wall conductive film, a first hole wall conductive film that is electrically connected to the first probe while sliding with the first probe, and the hole wall conductive film while sliding with the second probe. A second hole wall conductive film that is electrically connected to the second probe is formed, and the electronic component is electrically connected to the first probe via the first hole wall conductive film, and the electronic component is said to be electrically connected to the first probe. It is to be electrically connected to the second probe via a second hole wall conductive film.

A feature of the probe support according to the present invention is a probe support that guides a probe that electrically connects a first contact target and a second contact target from the first contact target toward the second contact target. A first guide plate having a first guide hole through which the probe is inserted and a second guide plate having a second guide hole arranged at a distance from the first guide plate to the second contact target side and through which the probe is inserted. The second guide plate includes two guide plates and electronic components arranged on the second guide plate, and the probe comes into contact with the second contact target on the hole wall of the second guide hole. A hole wall conductive film that electrically connects to the probe while sliding with the probe is formed when pushed in, and the electronic component is electrically connected to the probe via the hole wall conductive film. To connect.

According to the present invention, it is possible to provide an electrical connection device and a probe support capable of performing a more reliable electrical inspection.

It is a schematic side view which shows typically the inspection apparatus which concerns on 1st Embodiment of this invention. It is a partially enlarged sectional view schematically showing the probe support which concerns on 1st Embodiment of this invention. It is a partially enlarged sectional view schematically showing the probe support which concerns on 1st Embodiment of this invention. (A) It is a schematic plan view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (B) It is schematic cross-sectional view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (A) It is a schematic plan view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (B) It is schematic cross-sectional view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (A) It is a schematic plan view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (B) It is schematic cross-sectional view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (A) It is a schematic plan view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (B) It is schematic cross-sectional view for demonstrating the manufacturing method which concerns on 1st Embodiment of this invention. (A) It is a partially enlarged sectional view for demonstrating a comparative example. (B) It is a partially enlarged sectional view for demonstrating a comparative example. (A) It is a partially enlarged sectional view for demonstrating an Example. (B) It is a partially enlarged sectional view for demonstrating an Example. It is a graph which shows the result of the power supply impedance evaluation. It is a graph which shows the result of the insertion loss characteristic evaluation. It is a graph which shows the result of the reflection loss characteristic evaluation.

Hereinafter, the electrical connection device according to the embodiment of the present invention will be described in detail with reference to the drawings. Further, the embodiments shown below exemplify an apparatus or the like for embodying the technical idea of the present invention, and the technical idea of the present invention describes the arrangement of each component as follows. Not specific. The technical idea of the present invention can be modified in various ways within the scope of claims.

[First Embodiment]
<Configuration of inspection equipment>
FIG. 1 is a side view schematically showing an inspection device 1 including an electrical connection device according to a first embodiment of the present invention. For the sake of explanation, the vertical direction Z, the horizontal direction X orthogonal to the vertical direction Z, and the front-rear direction Y orthogonal to the vertical direction Z and the horizontal direction X are defined in the drawings. Further, the vertical direction Z can be paraphrased as the longitudinal direction of the probe 20.

As shown in FIG. 1, the inspection device 1 mainly includes a card-shaped connecting device 2 and a chuck 12.

A card-shaped connecting device 2 (sometimes also referred to as a probe card) is held by a frame (not shown) above a chuck 12 that can be raised and lowered. A semiconductor wafer 14 is held on the chuck 12 as an example of the object to be inspected. A large number of integrated circuits are incorporated in the semiconductor wafer 14.

The semiconductor wafer 14 is arranged on the chuck 12 for electrical inspection of the integrated circuit, with a large number of electrode pads 14a of the integrated circuit facing upward.

The card-shaped connecting device 2 includes a probe substrate 16, a probe support 18, and a probe 20.

The probe substrate 16 is made of, for example, a circular rigid wiring board. The probe substrate 16 is electrically connected to the base end portion 20b (upper end portion) of the probe 20.

A large number of tester lands 16b serving as connection ends to testers (not shown) are provided on the peripheral edge of the upper surface (upper surface shown in FIG. 1) of the probe substrate 16. Each tester land 16b is connected to a wiring 16a provided on the probe substrate 16.

Further, on the upper surface of the probe substrate 16 (upper surface shown in FIG. 1), for example, a metal reinforcing plate 5 for reinforcing the probe substrate 16 is provided. The reinforcing plate 5 is arranged at the central portion of the probe substrate 16 excluding the peripheral portion provided with the tester land 16b. Further, the probe support 18 is arranged on the lower surface (lower surface shown in FIG. 1) of the probe substrate 16.

The probe support 18 is held on the probe substrate 16 by a predetermined holding member (not shown). The probe support 18 guides the probe 20 from the probe substrate 16 toward the semiconductor wafer 14. The probe support 18 prevents the probes 20 from interfering with each other when the tip portion 20a (lower end portion) of the probe 20 is pressed against the semiconductor wafer 14.

The probe 20 has a tip portion 20a and a proximal end portion 20b. The tip portion 20a of the probe 20 is arranged so as to face the electrode pad 14a provided on the semiconductor wafer 14.

The base end portion 20b of the probe 20 is in contact with the connection pad 16c (see FIGS. 2 to 3) of the probe substrate 16 in a crimped state, that is, in a preloaded state. As a result, the base end portion 20b of the probe 20 is electrically connected to the probe substrate 16.

In the present embodiment, the probe support 18 and the probe 20 form the electrical connection device described in the claims. Further, the connection pad 16c of the probe substrate 16 (see FIGS. 2 to 3) constitutes the first contact object described in the claims, and the electrode pad 14a of the semiconductor wafer 14 constitutes the first contact object described in the claims. 2 Consists of a contact target.

<Structure of probe support>
Next, the configuration of the probe support 18 will be described in detail with reference to FIGS. FIG. 2 is a partially enlarged cross-sectional view of a part of the probe support 18 according to the first embodiment of the present invention. FIG. 3 is a partially enlarged cross-sectional view showing a state in which the probe 20 is pressed against the semiconductor wafer 14 in the probe support 18 according to the first embodiment of the present invention.

As shown in FIG. 2, the probe support 18 is arranged below the probe substrate 16. The probe support 18 mainly includes a guide plate 100 having a plurality of guide holes for inserting the plurality of probes 20, and an electronic component 200.

The guide plate 100 is configured to guide the probe 20 inserted into the guide hole. The guide plate 100 includes an upper guide plate 110, a lower guide plate 120, and an intermediate guide plate 130 arranged between the upper guide plate 110 and the lower guide plate 120.

Each of the upper guide plate 110, the intermediate guide plate 130, and the lower guide plate 120 is formed of an insulating material such as a ceramic plate or a polyimide synthetic resin plate. The upper guide plate 110, the intermediate guide plate 130, and the lower guide plate 120 are arranged so as to be parallel to each other by a member such as a spacer member 34, and are mutually arranged by a holding member (not shown) such as a screw. Is connected to.

The upper guide plate 110 is arranged close to the probe substrate 16. The upper guide plate 110 has an upper guide hole 110a penetrating in the vertical direction Z. A plurality of upper guide holes 110a are formed corresponding to each of the plurality of probes 20. The probe 20 is inserted into the upper guide hole 110a so as to allow the probe 20 to move in the vertical direction Z. In the present embodiment, the upper guide hole 110a constitutes the first guide hole described in the claims, and the upper guide plate 110 constitutes the first guide plate described in the claims.

The lower guide plate 120 is arranged at intervals in the vertical direction Z from the upper guide plate 110. The lower guide plate 120 has a lower guide hole 120a penetrating in the vertical direction Z. A plurality of lower guide holes 120a are formed corresponding to each of the plurality of probes 20. The probe 20 is inserted into the lower guide hole 120a so as to allow the probe 20 to move in the vertical direction Z.

The intermediate guide plate 130 is arranged between the upper guide plate 110 and the lower guide plate 120. The intermediate guide plate 130 is arranged at a distance from the upper guide plate 110 to the semiconductor wafer 14 side. The intermediate guide plate 130 has an intermediate guide hole 130a penetrating in the vertical direction Z. A plurality of intermediate guide holes 130a are formed corresponding to each of the plurality of probes 20. The probe 20 is inserted into the intermediate guide hole 130a so as to allow the probe 20 to move in the vertical direction Z. In the present embodiment, the intermediate guide hole 130a constitutes the second guide hole described in the claims, and the intermediate guide plate 130 constitutes the second guide plate described in the claims.

In the intermediate guide plate 130, the hole wall conductive film 211 is formed in the hole wall 130b of the intermediate guide hole 130a. The hole wall conductive film 211 is composed of a conductive member. The member constituting the hole wall conductive film 211 is not particularly limited as long as it is a conductive member, and may be, for example, platinum or gold.

When the probe 20 is pushed in by contact with the semiconductor wafer 14, the hole wall conductive film 211 electrically connects to the probe 20 while sliding with the probe 20. In the present embodiment, the hole wall conductive film 211 is formed over the entire circumference of the hole wall 130b. The hole wall conductive film 211 does not necessarily have to be formed on the entire circumference of the hole wall 130b. For example, when the probe 20 is pushed in by contact with the semiconductor wafer 14, the hole wall conductive film 211 is within a range in which the probe 20 can be electrically connected to the probe 20 by contacting the probe 20. It may be formed as a part of.

Further, a connecting line 212 for electrically connecting the electronic component 200 and the hole wall conductive film 211 is formed on the upper surface 130x of the intermediate guide plate 130. The connecting line 212 is composed of a conductive member. The member constituting the connecting wire 212 is not particularly limited as long as it is a conductive member, and may be, for example, platinum or gold.

A shielding chamber S1 is formed between the upper guide plate 110 and the intermediate guide plate 130. The shielding chamber S1 is partitioned by an upper guide plate 110, an intermediate guide plate 130, and a plurality of spacer members 34. Specifically, the vertical direction Z of the shielding chamber S1 is partitioned by the upper guide plate 110 and the intermediate guide plate 130, and the horizontal direction X and the front-rear direction Y of the shielding chamber S1 are partitioned by a plurality of spacer members 34.

The electronic component 200 is, for example, a capacitor, a terminating resistor, an IC, a diode, or the like. In this embodiment, the case where the electronic component 200 is a capacitor will be described as an example.

The electronic component 200 is arranged in the shielding chamber S1 formed between the upper guide plate 110 and the intermediate guide plate 130. The electronic component 200 is arranged on the intermediate guide plate 130 in the shielding chamber S1. Specifically, the electronic component 200 is arranged on the upper surface 130x of the intermediate guide plate 130. The electronic component 200 may be arranged on the lower surface 130y of the intermediate guide plate 130. That is, the electronic component 200 may be arranged outside the shielding chamber S1.

The electronic component 200 is electrically connected to the probe 20 via the hole wall conductive film 211. Specifically, the electronic component 200 is connected to the probe 20 via the hole wall conductive film 211 and the connecting line 212.

<Probe configuration>
Next, the configuration of the probe 20 will be described in detail. The probe 20 is composed of a conductive member. The member constituting the probe 20 may be, for example, tungsten.

The probe 20 is inserted into the upper guide hole 110a of the upper guide plate 110, the intermediate guide hole 130a of the intermediate guide plate 130, and the lower guide hole 120a of the lower guide plate 120. As a result, the base end portion 20b of the probe 20 is guided toward the connection pad 16c formed at a predetermined position on the probe substrate 16. The base end portion 20b of the probe 20 projects from the upper guide plate 110 by a predetermined length. The base end portion 20b of the probe 20 may be fixed to the connection pad 16c of the probe substrate 16 by using, for example, solder.

Further, the tip portion 20a of the probe 20 is guided toward the electrode pad 14a of the semiconductor wafer 14. The tip portion 20a of the probe 20 projects downward from the probe support 18 in the vertical direction Z with a predetermined length. The tip portion 20a of the probe 20 is arranged from the lower guide plate 120 at a position corresponding to the electrode pad 14a to be connected to the semiconductor wafer 14.

The probe 20 has a curved portion 20x that curves between the upper guide plate 110 and the intermediate guide plate 130.

The curved portion 20x has the position of the upper guide hole 110a and the position of the intermediate guide hole 130a and the lower guide hole 120a in a state where the probe 20 is inserted into the upper guide hole 110a, the intermediate guide hole 130a, and the lower guide hole 120a. It is formed by shifting a predetermined amount in the left-right direction X.

The curved portion 20x is formed so as to be elastically deformed in the same shape and the same posture in the plurality of probes 20. As a result, the probe 20 is arranged on the probe support 18 in a state of drawing a smooth crank.

For example, in the electrical inspection of the semiconductor wafer 14, as shown in FIG. 3, as the chuck 12 rises, the tip portion 20a of the probe 20 corresponding to the electrode pad 14a is moved above the vertical direction Z (the direction indicated by the arrow M1). Push up to. Then, by this pushing up, the tip portion 20a of the probe 20 moves linearly upward in the vertical direction Z while being guided by the lower guide hole 120a of the lower guide plate 120.

Further, by pushing up the tip portion 20a of the probe 20, the curved portion 20x of the probe 20 is greatly elastically deformed in a bow shape in one of the left-right directions X. Then, the tip portion 20a of the probe 20 is pressed against the corresponding electrode pad 14a by the appropriate flexibility due to the elasticity of the probe 20, so that the probe 20 is securely connected to the electrode pad 14a.

As a result, the electrode pad 14a is electrically connected to the tester (not shown) via the corresponding tester land 16b of the probe substrate 16, and the semiconductor wafer 14 is electrically inspected.

Further, as shown in FIG. 3, when the curved portion 20x of the probe 20 is elastically deformed, that is, curved, the probe 20 slides on the hole wall conductive film 211 formed in the hole wall 130b of the intermediate guide hole 130a. That is, the probe 20 comes into contact with a part of the hole wall conductive film 211.

As a result, the probe 20 and the hole wall conductive film 211 are electrically connected, and the electrode pad 14a of the semiconductor wafer 14, the probe 20, the hole wall conductive film 211, the connecting wire 212, and the electronic component 200 are connected. And are electrically connected.

Then, as the chuck 12 descends, the tip portion 20a of the probe 20 moves linearly downward in the vertical direction Z while being guided by the lower guide hole 120a of the lower guide plate 120. As a result, the curved portion 20x of the probe 20 that has been elastically deformed returns to the original shape as shown in FIG.

<Manufacturing method of probe support>
Next, a method for manufacturing the probe support 18 will be described. Specifically, a manufacturing method for manufacturing the intermediate guide plate 130 in which the electronic component 200 is arranged in the probe support 18 will be described. The manufacturing method includes a hole forming step, a vapor deposition step, a molding step, and a placement step.

Here, FIGS. 4A to 4B are conceptual diagrams for explaining the hole forming step. 5 (a) to 5 (b) are conceptual diagrams for explaining the vapor deposition process. 6 (a) to 6 (b) are conceptual diagrams for explaining the molding process. 7 (a) to 7 (b) are conceptual diagrams for explaining the arrangement process. In each of FIGS. 4 to 7, (a) is a schematic plan view, and (b) is a schematic cross-sectional view taken along the QQ line of (a).

First, in the hole forming step, as shown in FIGS. 4A to 4B, a plurality of intermediate guide holes 130a are formed in the intermediate guide plate 130. As a method for forming the intermediate guide hole 130a, for example, a method such as a laser machining process may be applied.

Next, in the vapor deposition step, as shown in FIGS. 5A to 5B, a conductive member is vapor-deposited on the intermediate guide plate 130 to form the conductive film 210. As a method for forming the conductive film 210, for example, a method such as sputtering may be applied. As a result, the conductive film 210 is formed on the upper surface 130x of the intermediate guide plate 130 and the hole wall 130b of the intermediate guide hole 130a. The member constituting the conductive film 210 is not particularly limited as long as it is a member that can be processed by sputtering or the like and has conductivity, but may be, for example, platinum or gold.

Next, in the molding step, as shown in FIGS. 6A to 6B, the connecting line 212 is formed so as to leave a part of the conductive film 210. The shape of the connecting line 212 is not particularly limited, and may be formed in any shape. As a method for forming the connecting line 212, for example, a method such as photolithography may be applied. At this time, the hole wall conductive film 211 is formed on the hole wall 130b by leaving the conductive film 210 formed on the hole wall 130b of the intermediate guide hole 130a.

Note that the examples of FIGS. 6A to 6B show a case where the connection line 212 and the hole wall conductive film 211 are formed for the two intermediate guide holes 130a, but the present invention is not limited to this. One intermediate guide hole 130a may be targeted, or three or more intermediate guide holes 130a may be targeted.

Next, in the arrangement step, as shown in FIGS. 7A to 7B, the electronic component 200 is arranged so as to be connected to the connection line 212. As a method of connecting the electronic component 200 and the connecting wire 212, reflow soldering or the like may be applied. Note that the examples of FIGS. 7A to 7B show a case where one electronic component 200 is connected to two connection lines 212, but the present invention is not limited to this. One electronic component 200 may be connected to one connecting line 212, or may be connected to three or more connecting lines 212.

In this way, the intermediate guide plate 130 in which the electronic component 200 is arranged is manufactured. After that, the upper guide plate 110, the lower guide plate 120, and the like are assembled to manufacture the probe support 18, but since a well-known technique can be applied, detailed description thereof will be omitted.

The configurations shown in FIGS. 7A to 7B are particularly effective when one electronic component 200 and a plurality of probes 20 are electrically connected in order to reduce the number of electronic components 200 arranged. is there. Hereinafter, a case where the probe 20 includes a first probe 20 and a second probe 20 arranged within a range of a predetermined distance Lx from the electronic component 200 will be specifically described.

In this case, as shown in FIG. 7A, the first probe 20 is arranged at the position P1 at a distance L1 from the center C of the electronic component 200, and the second probe 20 is located at a distance L2 from the center C of the electronic component 200. It is arranged at the position P2 of. The positions P1 to P2 may be defined at the center of the intermediate guide hole 130a, or may be defined at a predetermined position (for example, an end) in the intermediate guide hole 130a. Further, the distance L1 and the predetermined distance Lx satisfy the relationship of the distance L1 ≦ the predetermined distance Lx, and the distance L2 and the predetermined distance Lx satisfy the distance L2 ≦ the predetermined distance Lx.

Then, as shown in FIG. 7A, the intermediate guide plate 130 has a first hole wall conductor as a hole wall conductive film 211 that is electrically connected to the first probe 20 while sliding with the first probe 20. Along with the formation of the film 211a, a second hole wall conductive film 211b that electrically connects to the second probe 20 while sliding with the second probe 20 is formed.

Further, the electronic component 200 is electrically connected to the first probe 20 via the first hole wall conductive film 211a and electrically connected to the second probe 20 via the second hole wall conductive film 211b. Specifically, the electronic component 200 is the first probe 20 via the first connecting line 212a and the first hole wall conductive film 211a formed between the electronic component 200 and the first hole wall conductive film 211a. And electrically connect. Further, the electronic component 200 is electrically connected to the second probe 20 via the second connecting line 212b formed between the electronic component 200 and the second hole wall conductive film 211a and the second hole wall conductive film 211b. Connect to.

As a result, one electronic component 200 and a plurality of probes 20 can be electrically connected to each other. Therefore, as compared with the case where one electronic component 200 and one probe 20 are electrically connected, the electronic component 200 can be electrically connected. The number of arrangements can be reduced. Therefore, the space for arranging the electronic component 200 can be reduced, and the cost associated with the electronic component 200 can also be reduced. In the above example, the case where one electronic component 200 is connected to the two probes 20 of the first probe 20 and the second probe 20 has been described as an example, but a predetermined distance Lx from the electronic component 200 has been described. It may be connected to more probes 20 located within the range of.

<Action and effect>
As described above, the probe support 18 according to the first embodiment of the present invention includes an upper guide plate 110 (first guide plate), a lower guide plate 120, an intermediate guide plate 130 (second guide plate), and the like. It includes an electronic component 200 arranged on the intermediate guide plate 130.

Further, in the intermediate guide plate 130, a hole wall conductive film 211 is formed in the hole wall 130b of the intermediate guide hole 130a. Further, the hole wall conductive film 211 is configured to be electrically connected to the probe 20 while sliding with the probe 20 when the probe 20 is pushed in by contact with the semiconductor wafer 14. Then, the electronic component 200 is electrically connected to the probe 20 via the hole wall conductive film 211.

According to the probe support 18, the electronic component 200 can be arranged on the intermediate guide plate 130 to electrically connect the electronic component 200 and the probe 20. As a result, the conductive path between the electronic component 200 and the tip portion 20a of the probe 20 can be shortened as compared with the case where the electronic component 200 is arranged on the probe substrate 16 as in the prior art. Therefore, it is possible to prevent the effect of attaching the electronic component 200 from being reduced due to an increase in the distance of the conductive path between the electronic component 200 and the tip portion 20a of the probe 20. That is, since the functions of the electronic component 200 can be utilized more effectively, the inspection accuracy can be further improved and a more reliable electrical inspection can be performed.

Further, since the hole wall conductive film 211 is electrically connected to the probe 20 by sliding with the probe 20, the probe does not hinder the elastic deformation of the curved portion 20x and the movement of the probe 20 in the vertical direction Z. The 20 and the electronic component 200 can be electrically connected. That is, it is particularly effective in an electrical inspection using a vertically operating probe 20.

Further, the electronic component 200 is arranged in the shielding chamber S1 formed between the upper guide plate 110 and the intermediate guide plate 130. Thereby, for example, even if a heating inspection for heating the semiconductor wafer 14 is performed in the electrical inspection, it is possible to suppress heat transfer to the electronic component 200. Therefore, since it is possible to suppress the electronic component 200 from being heated, it is possible to prevent the electronic component 200 from failing due to heating. Further, since it is possible to prevent an external impact on the electronic component 200, it is possible to prevent a failure such as damage to the electronic component 200.

[Comparative evaluation]
Next, in order to clarify the effect of the present invention, the comparative evaluation carried out using the probe support according to the comparative example and the example will be described. Specifically, the power supply impedance characteristic evaluation, the insertion loss characteristic evaluation, and the reflection loss characteristic evaluation will be described. In the following, in all the evaluations, a capacitor having a common specification such as a capacitance is used as the electronic component 200. Further, a common probe 20 is also used.

<Evaluation of power supply impedance characteristics>
In the power supply impedance characteristic evaluation, first, Comparative Examples 1 to 3 and Examples 1 and 2 were prepared. In Comparative Examples 1 to 3 and Examples 1 and 2, those provided with two probes 20 and an electronic component 200 (capacitor) connected to the two probes 20 were used. Hereinafter, the configurations of Comparative Examples 1 to 3 and Examples 1 and 2 will be briefly described.

In Comparative Example 1, the electronic component 200 was arranged on the lower surface 16y of the probe substrate 16 as in the prior art. Specifically, in Comparative Example 1, as shown in FIG. 8A, the electronic component 200 is electrically connected to the base end portion 20b of the probe 20 via the connection line 200z drawn from the connection pad 16c of the probe substrate 16. I used the one that is connected to the target. In Comparative Example 1, one terminal of the electronic component 200 is connected to one probe 20 via one connection line 200z, and the other terminal is connected to the other probe 20 via the other connection line 200z. .. In Comparative Example 1, ten electronic components 200 having each terminal connected in this way are connected in parallel.

In Comparative Example 2, 20 electronic components 200 were arranged at the same positions as in Comparative Example 1. That is, in Comparative Example 2, the number of electronic components 200 was increased as compared with Comparative Example 1.

In Comparative Example 3, one not provided with a connecting line 200z was used. Specifically, as shown in FIG. 8B, in Comparative Example 3, the electronic component 200 and the proximal end portion 20b of the probe 20 were directly connected to each other. In Comparative Example 3, 20 electronic components 200 were arranged.

In Example 1, as shown in FIG. 9A, an intermediate guide plate 130 and a probe substrate 16 in which electronic components 200 are arranged are used. Specifically, in Example 1, one electronic component 200 was arranged on the intermediate guide plate 130, and nine electronic components 200 were arranged on the lower surface 16y of the probe substrate 16. Further, in the first embodiment, the electronic components 200 arranged on the lower surface 16y of the probe substrate 16 are connected in the same manner as in the comparative example 1. Specifically, one terminal of the electronic component 200 is connected to one probe 20 via one connecting line 200z, and the other terminal is connected to the other probe 20 via the other connecting line 200z. Further, in the first embodiment, one terminal of the electronic component 200 arranged on the intermediate guide plate 130 is connected to one probe 20 via one connection line 212 and one hole wall conductive film 211, and the other. Terminal is connected to the other probe 20 via the other connecting wire 212 and the other hole wall conductive film 211.

In Example 2, as shown in FIG. 9B, the electronic component 200 was arranged only on the intermediate guide plate 130. Specifically, in Example 2, 10 electronic components 200 were arranged on the intermediate guide plate 130. Further, in the second embodiment, one terminal of the electronic component 200 arranged on the intermediate guide plate 130 is connected to one probe 20 via one connection line 212 and one hole wall conductive film 211, and the other. Terminal is connected to the other probe 20 via the other connecting wire 212 and the other hole wall conductive film 211.

FIG. 10 shows the results of measuring the power supply impedances of Comparative Examples 1 to 3 and Examples 1 and 2 described above by simulation. The power supply impedance was measured in a section from the tip portion 20a of one probe 20 to the tip portion 20a of the other probe 20 via the electronic component 200. Further, in FIG. 10, the vertical axis indicates the power supply impedance ratio. Here, the power supply impedance ratio shown in FIG. 10 indicates the ratio of each power supply impedance based on the power supply impedance of Comparative Example 1 (1). In FIG. 10, the smaller the power supply impedance ratio, the smaller the power supply impedance and the better the characteristics.

As shown in FIG. 10, when Comparative Examples 1 to 3 and Examples 1 and 2 are compared, it can be seen that the power supply impedance of Examples 1 and 2 is low. In particular, in the second embodiment in which the electronic component 200 is arranged only on the intermediate guide plate 130, it can be seen that the power supply impedance can be significantly suppressed. Further, as shown in the first embodiment, it can be seen that the power supply impedance can be suppressed by arranging even one electronic component 200 on the intermediate guide plate 130 and shortening the conductive path between the electronic component 200 and the semiconductor wafer. As described above, it was proved that the power supply impedance can be suppressed in Examples 1 and 2.

<Evaluation of insertion loss characteristics>
In the insertion loss characteristic evaluation, Comparative Example A and Example B were prepared.

In Comparative Example A, as shown in FIG. 8A, one electronic component 200 arranged on the lower surface 16y of the probe substrate 16 was used. Further, in Comparative Example A, the electronic component 200 is connected to the proximal end portion 20b of the two probes 20 via the two connecting lines 200z drawn from the connecting pad 16c of the probe substrate 16. Specifically, in Comparative Example A, one terminal of the electronic component 200 is connected to one probe 20 via one connection line 200z, and the other terminal is connected to the other probe via the other connection line 200z. It is connected to 20.

In Example B, as shown in FIG. 9B, one electronic component 200 arranged on the intermediate guide plate 130 was used. Further, in the second embodiment, the electronic component 200 arranged on the intermediate guide plate 130 is connected to the two probes 20 via the two connecting lines 212. Specifically, in Example B, one terminal of the electronic component 200 is connected to one probe 20 via one connection line 212 and the hole wall conductive film 211, and the other terminal is connected to the other. It is connected to the other probe 20 via the wire 212 and the hole wall conductive film 211.

Then, the insertion loss of each of Comparative Example A and Example B was measured by simulation. The insertion loss was measured in the section from the tip 20a of one probe 20 to the tip 20a of the other probe 20 via the electronic component 200.

FIG. 11 shows the results of measuring the insertion losses of Comparative Example A and Example B, respectively. In FIG. 11, the horizontal axis represents the frequency and the vertical axis represents the loss level ratio. Here, the loss level ratio shown in FIG. 11 indicates the ratio of the loss level of Example B with the loss level of Comparative Example A as the reference (1). In FIG. 11, the smaller the loss level ratio, the smaller the insertion loss, which means that the insertion loss characteristic is excellent.

As shown in FIG. 11, it can be seen that the insertion loss of Example B is suppressed as compared with Comparative Example A. That is, it was proved that the insertion loss can be suppressed by arranging the electronic component 200 on the intermediate guide plate 130 and shortening the conductive path between the electronic component 200 and the semiconductor wafer as in Example B.

<Evaluation of reflection loss characteristics>
In the evaluation of the reflection loss characteristics, Comparative Example A and Example B were prepared. Since Comparative Example A and Example B are the same as those used in the above-mentioned evaluation of insertion loss characteristics, description thereof will be omitted.

Then, the reflection loss (Return Loss) of Comparative Example A and Example B was measured by simulation as follows. The measurement of the reflection loss was performed on the section from the tip portion 20a of one probe 20 to the tip portion 20a of the other probe 20 via the electronic component 200.

FIG. 12 shows the results of measuring the reflection loss of each of Comparative Example A and Example B. In FIG. 12, the horizontal axis represents the frequency and the vertical axis represents the loss level ratio. Here, the loss level ratio shown in FIG. 12 indicates the ratio of the loss level of Example B with the loss level of Comparative Example A as the reference (1). In FIG. 12, the larger the loss level ratio, the smaller the reflection loss, which means that the reflection loss characteristic is excellent.

As shown in FIG. 12, it can be seen that the reflection loss of Example B is suppressed as compared with Comparative Example A. That is, as shown in Example B, it was proved that the reflection loss can be suppressed by arranging the electronic component 200 on the intermediate guide plate 130 and shortening the conductive path between the electronic component 200 and the semiconductor wafer.

[Other Embodiments of the present invention]
Although the present invention has been described in detail using the above-described embodiments, it is clear to those skilled in the art that the present invention is not limited to the embodiments described in the present specification.

For example, in the above-described embodiment, the electronic component 200 is arranged on the upper surface 130x of the intermediate guide plate 130, but is not limited thereto. The electronic component 200 may be arranged on the lower surface 130y of the intermediate guide plate 130. Further, the electronic component 200 may be arranged, for example, on the upper surface 120x or the lower surface 120y of the lower guide plate 120. In this case, the lower guide plate 120 constitutes the second guide plate within the scope of the claims. Further, when more other guide plates are provided, the electronic component 200 may be arranged on the upper surface or the lower surface of the other guide plates. The electronic component 200 may be arranged on the upper surface or the lower surface of the guide plate located closest to the semiconductor wafer 14 among the plurality of guide plates 100.

Further, for example, in the above-described embodiment, the connection line 212 for electrically connecting the hole wall conductive film 211 and the electronic component 200 is provided, but the hole wall conductive film 211 and the electronic component 200 can be directly connected. If there is, it is not always necessary to provide the connecting line 212.

Further, in the above-described embodiment, the electrical connection device has been described as being composed of the probe 20 and the probe support 18, but the present invention is not limited to this, and for example, the probe substrate 16, the probe support 18, and the probe are used. It may be composed of a card-shaped connecting device 2 including 20 and 2.

Further, in the above-described embodiment, the probe 20 has been described by taking a vertically operating probe as an example, but the present invention is not limited to this, and various types of probes may be applied.

As described above, the present invention is not limited to the above-described embodiment as it is, and at the implementation stage, the components can be modified and embodied within a range that does not deviate from the gist thereof. In addition, various inventions can be formed by an appropriate combination of the plurality of components disclosed in the above-described embodiment. For example, some components may be removed from all the components shown in the embodiments.

1 ... Inspection device 2 ... Card-shaped connecting device 14 ... Semiconductor wafer 16 ... Probe substrate 16c ... Connection pad 18 ... Probe support 20 ... Probe 34 ... Spacer member 100 ... Guide plate 110 ... Upper guide plate 110a ... Upper guide hole 120 ... Lower guide plate 120a ... Lower guide hole 130 ... Intermediate guide plate 130a ... Intermediate guide hole 130b ... Hole wall 200 ... Electronic component 211 ... Hole wall conductive film 212 ... Connection line

Claims (5)

An electrical connection device including a probe that electrically connects a first contact object and a second contact object, and a probe support that guides the probe from the first contact object toward the second contact object. hand,
The probe support is
A first guide plate having a first guide hole through which the probe is inserted,
A second guide plate which is arranged at a distance from the first guide plate to the second contact target side and has a second guide hole through which the probe is inserted, and a second guide plate.
An electronic component arranged on the second guide plate is provided.
Wherein the second guide plate, in hole wall of the second guide hole, said curved when being pushed while being curved, with the probe and slide, which is curved by contact with the probe said second contact object A hole wall conductive film that electrically connects to the probe is formed.
An electrical connection device, wherein the electronic component is electrically connected to the probe curved through the hole wall conductive film. The electrical connection device according to claim 1, wherein the probe has a curved portion that curves between the first guide plate and the second guide plate. The electrical connection device according to claim 1 or 2, wherein the electronic component is arranged in a shielding chamber formed between the second guide plate and the first guide plate. The probe includes a first probe and a second probe that are arranged within a predetermined distance from the electronic component.
On the second guide plate, as the hole wall conductive film, the first hole wall conductive film that electrically connects to the first probe while sliding with the first probe and the second probe are slid on the second guide plate. However, a second hole wall conductive film that electrically connects to the second probe is formed.
The electronic component is characterized by being electrically connected to the first probe via the first hole wall conductive film and electrically connected to the second probe via the second hole wall conductive film. The electrical connection device according to any one of claims 1 to 3. A probe support that guides a probe that electrically connects a first contact object and a second contact object from the first contact object toward the second contact object.
A first guide plate having a first guide hole through which the probe is inserted,
A second guide plate which is arranged at a distance from the first guide plate to the second contact target side and has a second guide hole through which the probe is inserted, and a second guide plate.
An electronic component arranged on the second guide plate is provided.
Wherein the second guide plate, in hole wall of the second guide hole, said curved when being pushed while being curved, with the probe and slide, which is curved by contact with the probe said second contact object A hole wall conductive film that electrically connects to the probe is formed.
The electronic component is a probe support that is electrically connected to the probe that is curved via the hole wall conductive film.

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