TWI804677B - 用於缺陷分類之多波長干涉法 - Google Patents

用於缺陷分類之多波長干涉法 Download PDF

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Publication number
TWI804677B
TWI804677B TW108131786A TW108131786A TWI804677B TW I804677 B TWI804677 B TW I804677B TW 108131786 A TW108131786 A TW 108131786A TW 108131786 A TW108131786 A TW 108131786A TW I804677 B TWI804677 B TW I804677B
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Taiwan
Prior art keywords
defect
illumination
sample
metal
induced phase
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TW108131786A
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Chinese (zh)
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TW202033948A (zh
Inventor
安 曾
海倫 劉 (衡)
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美商科磊股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8858—Flaw counting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10141—Special mode during image acquisition
    • G06T2207/10152—Varying illumination

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
TW108131786A 2018-09-04 2019-09-04 用於缺陷分類之多波長干涉法 TWI804677B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862726782P 2018-09-04 2018-09-04
US62/726,782 2018-09-04
US16/551,155 2019-08-26
US16/551,155 US11017520B2 (en) 2018-09-04 2019-08-26 Multi-wavelength interferometry for defect classification

Publications (2)

Publication Number Publication Date
TW202033948A TW202033948A (zh) 2020-09-16
TWI804677B true TWI804677B (zh) 2023-06-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108131786A TWI804677B (zh) 2018-09-04 2019-09-04 用於缺陷分類之多波長干涉法

Country Status (6)

Country Link
US (1) US11017520B2 (https=)
JP (1) JP7219818B2 (https=)
KR (1) KR102545425B1 (https=)
CN (2) CN114858809B (https=)
TW (1) TWI804677B (https=)
WO (1) WO2020051046A1 (https=)

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* Cited by examiner, † Cited by third party
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US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
WO2023135681A1 (ja) * 2022-01-12 2023-07-20 株式会社日立ハイテク 表面検査装置
CN115718068B (zh) * 2022-10-21 2025-07-04 华南师范大学 一种动态定量微分干涉相衬显微成像系统及方法
US20250060324A1 (en) * 2023-08-14 2025-02-20 Tokyo Electron Limited Hybrid x-ray and optical metrology and navigation

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JP2001027611A (ja) * 1999-07-13 2001-01-30 Lasertec Corp 欠陥検査装置
US20010013936A1 (en) * 1998-11-18 2001-08-16 Kla Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
US20110242312A1 (en) * 2010-03-30 2011-10-06 Lasertec Corporation Inspection system and inspection method
TW201617603A (zh) * 2014-07-22 2016-05-16 克萊譚克公司 用於同步暗場及相位對比檢測之系統及方法
CN107533103A (zh) * 2015-05-20 2018-01-02 科磊股份有限公司 在逻辑芯片中基于电压对比的错误及缺陷推导

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JP3047646B2 (ja) * 1991-10-31 2000-05-29 株式会社日立製作所 欠陥検出方法及びその装置
US5710631A (en) * 1995-04-11 1998-01-20 International Business Machines Corporation Apparatus and method for storing interferometric images of scanned defects and for subsequent static analysis of such defects
JPH08327557A (ja) 1995-06-02 1996-12-13 Nikon Corp 欠陥検査装置及び方法
DE69737513T2 (de) * 1996-04-25 2007-12-13 Genicon Sciences Corp., San Diego Teilchenförmiges markierungsmittel verwendendes analytassay
US6171764B1 (en) * 1998-08-22 2001-01-09 Chia-Lin Ku Method for reducing intensity of reflected rays encountered during process of photolithography
US6433876B1 (en) * 1999-06-01 2002-08-13 Optical Perspectives Group, L.L.C. Multiple wavelength or multiple shear distance quantitative differential interference contrast microscopy
US6674522B2 (en) * 2001-05-04 2004-01-06 Kla-Tencor Technologies Corporation Efficient phase defect detection system and method
US6995847B2 (en) * 2002-05-24 2006-02-07 Honeywell International Inc. Methods and systems for substrate surface evaluation
US6756591B1 (en) * 2003-03-14 2004-06-29 Centre National De La Recherche Method and device for photothermal imaging tiny particles immersed in a given medium
US7768654B2 (en) * 2006-05-02 2010-08-03 California Institute Of Technology On-chip phase microscope/beam profiler based on differential interference contrast and/or surface plasmon assisted interference
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JP4716148B1 (ja) * 2010-03-30 2011-07-06 レーザーテック株式会社 検査装置並びに欠陥分類方法及び欠陥検出方法
JP5725501B2 (ja) * 2011-02-22 2015-05-27 レーザーテック株式会社 検査装置
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US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification

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Publication number Priority date Publication date Assignee Title
US20010013936A1 (en) * 1998-11-18 2001-08-16 Kla Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
JP2001027611A (ja) * 1999-07-13 2001-01-30 Lasertec Corp 欠陥検査装置
US20110242312A1 (en) * 2010-03-30 2011-10-06 Lasertec Corporation Inspection system and inspection method
TW201617603A (zh) * 2014-07-22 2016-05-16 克萊譚克公司 用於同步暗場及相位對比檢測之系統及方法
CN107533103A (zh) * 2015-05-20 2018-01-02 科磊股份有限公司 在逻辑芯片中基于电压对比的错误及缺陷推导

Also Published As

Publication number Publication date
KR20210041100A (ko) 2021-04-14
TW202033948A (zh) 2020-09-16
JP2022502676A (ja) 2022-01-11
WO2020051046A1 (en) 2020-03-12
CN112654859A (zh) 2021-04-13
CN114858809B (zh) 2025-04-04
CN114858809A (zh) 2022-08-05
US11017520B2 (en) 2021-05-25
CN112654859B (zh) 2022-05-13
JP7219818B2 (ja) 2023-02-08
US20200074617A1 (en) 2020-03-05
KR102545425B1 (ko) 2023-06-20

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