JP7219818B2 - 多波長インタフェロメトリによる欠陥分類 - Google Patents

多波長インタフェロメトリによる欠陥分類 Download PDF

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Publication number
JP7219818B2
JP7219818B2 JP2021535488A JP2021535488A JP7219818B2 JP 7219818 B2 JP7219818 B2 JP 7219818B2 JP 2021535488 A JP2021535488 A JP 2021535488A JP 2021535488 A JP2021535488 A JP 2021535488A JP 7219818 B2 JP7219818 B2 JP 7219818B2
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defect
illumination
inspection system
specimen
induced
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JP2022502676A (ja
JPWO2020051046A5 (https=
JP2022502676A5 (https=
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アンドリュー ツォン
ヘレン リウ
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KLA Corp
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KLA Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • G01B9/02015Interferometers characterised by the beam path configuration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854Grading and classifying of flaws
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854Grading and classifying of flaws
    • G01N2021/8858Flaw counting
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/10Image acquisition modality
    • G06T2207/10141Special mode during image acquisition
    • G06T2207/10152Varying illumination

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
JP2021535488A 2018-09-04 2019-08-29 多波長インタフェロメトリによる欠陥分類 Active JP7219818B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862726782P 2018-09-04 2018-09-04
US62/726,782 2018-09-04
US16/551,155 2019-08-26
US16/551,155 US11017520B2 (en) 2018-09-04 2019-08-26 Multi-wavelength interferometry for defect classification
PCT/US2019/048680 WO2020051046A1 (en) 2018-09-04 2019-08-29 Multi-wavelength interferometry for defect classification

Publications (4)

Publication Number Publication Date
JP2022502676A JP2022502676A (ja) 2022-01-11
JPWO2020051046A5 JPWO2020051046A5 (https=) 2022-08-30
JP2022502676A5 JP2022502676A5 (https=) 2022-08-30
JP7219818B2 true JP7219818B2 (ja) 2023-02-08

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JP2021535488A Active JP7219818B2 (ja) 2018-09-04 2019-08-29 多波長インタフェロメトリによる欠陥分類

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US (1) US11017520B2 (https=)
JP (1) JP7219818B2 (https=)
KR (1) KR102545425B1 (https=)
CN (2) CN114858809B (https=)
TW (1) TWI804677B (https=)
WO (1) WO2020051046A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
WO2023135681A1 (ja) * 2022-01-12 2023-07-20 株式会社日立ハイテク 表面検査装置
CN115718068B (zh) * 2022-10-21 2025-07-04 华南师范大学 一种动态定量微分干涉相衬显微成像系统及方法
US20250060324A1 (en) * 2023-08-14 2025-02-20 Tokyo Electron Limited Hybrid x-ray and optical metrology and navigation

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JP2001027611A (ja) 1999-07-13 2001-01-30 Lasertec Corp 欠陥検査装置
JP2002530631A (ja) 1998-11-18 2002-09-17 ケーエルエー−テンカー コーポレイション 反射表面のナノメートルスケールの形態測定のための検出システム
JP2005527820A (ja) 2002-05-24 2005-09-15 ハネウェル・インターナショナル・インコーポレーテッド 微分干渉コントラスト顕微鏡を使用する基板サンプルの表面品質を決定するための方法および装置
JP2011211035A (ja) 2010-03-30 2011-10-20 Lasertec Corp 検査装置並びに欠陥分類方法及び欠陥検出方法
JP2011220757A (ja) 2010-04-07 2011-11-04 Lasertec Corp 検査装置及び欠陥検査方法
JP2012174896A (ja) 2011-02-22 2012-09-10 Lasertec Corp 検査装置及び欠陥検査方法

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JP3047646B2 (ja) * 1991-10-31 2000-05-29 株式会社日立製作所 欠陥検出方法及びその装置
US5710631A (en) * 1995-04-11 1998-01-20 International Business Machines Corporation Apparatus and method for storing interferometric images of scanned defects and for subsequent static analysis of such defects
JPH08327557A (ja) 1995-06-02 1996-12-13 Nikon Corp 欠陥検査装置及び方法
DE69737513T2 (de) * 1996-04-25 2007-12-13 Genicon Sciences Corp., San Diego Teilchenförmiges markierungsmittel verwendendes analytassay
US6171764B1 (en) * 1998-08-22 2001-01-09 Chia-Lin Ku Method for reducing intensity of reflected rays encountered during process of photolithography
US6433876B1 (en) * 1999-06-01 2002-08-13 Optical Perspectives Group, L.L.C. Multiple wavelength or multiple shear distance quantitative differential interference contrast microscopy
US6674522B2 (en) * 2001-05-04 2004-01-06 Kla-Tencor Technologies Corporation Efficient phase defect detection system and method
US6756591B1 (en) * 2003-03-14 2004-06-29 Centre National De La Recherche Method and device for photothermal imaging tiny particles immersed in a given medium
US7768654B2 (en) * 2006-05-02 2010-08-03 California Institute Of Technology On-chip phase microscope/beam profiler based on differential interference contrast and/or surface plasmon assisted interference
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JP5814684B2 (ja) * 2010-09-03 2015-11-17 オリンパス株式会社 位相物体の可視化方法及び可視化装置
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9052190B2 (en) * 2013-03-12 2015-06-09 Kla-Tencor Corporation Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections
US9606069B2 (en) * 2014-06-25 2017-03-28 Kla-Tencor Corporation Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate
US9726615B2 (en) * 2014-07-22 2017-08-08 Kla-Tencor Corporation System and method for simultaneous dark field and phase contrast inspection
US10539612B2 (en) * 2015-05-20 2020-01-21 Kla-Tencor Corporation Voltage contrast based fault and defect inference in logic chips
CN106404174A (zh) * 2016-09-07 2017-02-15 南京理工大学 高通量双折射干涉成像光谱仪装置及其成像方法
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JP2002530631A (ja) 1998-11-18 2002-09-17 ケーエルエー−テンカー コーポレイション 反射表面のナノメートルスケールの形態測定のための検出システム
JP2001027611A (ja) 1999-07-13 2001-01-30 Lasertec Corp 欠陥検査装置
JP2005527820A (ja) 2002-05-24 2005-09-15 ハネウェル・インターナショナル・インコーポレーテッド 微分干渉コントラスト顕微鏡を使用する基板サンプルの表面品質を決定するための方法および装置
JP2011211035A (ja) 2010-03-30 2011-10-20 Lasertec Corp 検査装置並びに欠陥分類方法及び欠陥検出方法
JP2011220757A (ja) 2010-04-07 2011-11-04 Lasertec Corp 検査装置及び欠陥検査方法
JP2012174896A (ja) 2011-02-22 2012-09-10 Lasertec Corp 検査装置及び欠陥検査方法

Also Published As

Publication number Publication date
KR20210041100A (ko) 2021-04-14
TW202033948A (zh) 2020-09-16
JP2022502676A (ja) 2022-01-11
TWI804677B (zh) 2023-06-11
WO2020051046A1 (en) 2020-03-12
CN112654859A (zh) 2021-04-13
CN114858809B (zh) 2025-04-04
CN114858809A (zh) 2022-08-05
US11017520B2 (en) 2021-05-25
CN112654859B (zh) 2022-05-13
US20200074617A1 (en) 2020-03-05
KR102545425B1 (ko) 2023-06-20

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