KR102545425B1 - 결함 분류를 위한 다중 파장 간섭측정 - Google Patents

결함 분류를 위한 다중 파장 간섭측정 Download PDF

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KR102545425B1
KR102545425B1 KR1020217009726A KR20217009726A KR102545425B1 KR 102545425 B1 KR102545425 B1 KR 102545425B1 KR 1020217009726 A KR1020217009726 A KR 1020217009726A KR 20217009726 A KR20217009726 A KR 20217009726A KR 102545425 B1 KR102545425 B1 KR 102545425B1
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defect
illumination
sample
induced phase
split
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KR20210041100A (ko
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앤드류 젱
헬렌 리우
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8858—Flaw counting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10141—Special mode during image acquisition
    • G06T2207/10152—Varying illumination

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
KR1020217009726A 2018-09-04 2019-08-29 결함 분류를 위한 다중 파장 간섭측정 Active KR102545425B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862726782P 2018-09-04 2018-09-04
US62/726,782 2018-09-04
US16/551,155 2019-08-26
US16/551,155 US11017520B2 (en) 2018-09-04 2019-08-26 Multi-wavelength interferometry for defect classification
PCT/US2019/048680 WO2020051046A1 (en) 2018-09-04 2019-08-29 Multi-wavelength interferometry for defect classification

Publications (2)

Publication Number Publication Date
KR20210041100A KR20210041100A (ko) 2021-04-14
KR102545425B1 true KR102545425B1 (ko) 2023-06-20

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KR1020217009726A Active KR102545425B1 (ko) 2018-09-04 2019-08-29 결함 분류를 위한 다중 파장 간섭측정

Country Status (6)

Country Link
US (1) US11017520B2 (https=)
JP (1) JP7219818B2 (https=)
KR (1) KR102545425B1 (https=)
CN (2) CN114858809B (https=)
TW (1) TWI804677B (https=)
WO (1) WO2020051046A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
WO2023135681A1 (ja) * 2022-01-12 2023-07-20 株式会社日立ハイテク 表面検査装置
CN115718068B (zh) * 2022-10-21 2025-07-04 华南师范大学 一种动态定量微分干涉相衬显微成像系统及方法
US20250060324A1 (en) * 2023-08-14 2025-02-20 Tokyo Electron Limited Hybrid x-ray and optical metrology and navigation

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US20010013936A1 (en) 1998-11-18 2001-08-16 Kla Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
US20030218742A1 (en) 2002-05-24 2003-11-27 Daniel R. Fashant Methods and systems for substrate surface evaluation
US20110242312A1 (en) 2010-03-30 2011-10-06 Lasertec Corporation Inspection system and inspection method

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JPS61260211A (ja) * 1985-05-15 1986-11-18 Hitachi Ltd 自動異物検出方法及びその装置
JP3047646B2 (ja) * 1991-10-31 2000-05-29 株式会社日立製作所 欠陥検出方法及びその装置
US5710631A (en) * 1995-04-11 1998-01-20 International Business Machines Corporation Apparatus and method for storing interferometric images of scanned defects and for subsequent static analysis of such defects
JPH08327557A (ja) 1995-06-02 1996-12-13 Nikon Corp 欠陥検査装置及び方法
DE69737513T2 (de) * 1996-04-25 2007-12-13 Genicon Sciences Corp., San Diego Teilchenförmiges markierungsmittel verwendendes analytassay
US6171764B1 (en) * 1998-08-22 2001-01-09 Chia-Lin Ku Method for reducing intensity of reflected rays encountered during process of photolithography
US6433876B1 (en) * 1999-06-01 2002-08-13 Optical Perspectives Group, L.L.C. Multiple wavelength or multiple shear distance quantitative differential interference contrast microscopy
JP4543141B2 (ja) * 1999-07-13 2010-09-15 レーザーテック株式会社 欠陥検査装置
US6674522B2 (en) * 2001-05-04 2004-01-06 Kla-Tencor Technologies Corporation Efficient phase defect detection system and method
US6756591B1 (en) * 2003-03-14 2004-06-29 Centre National De La Recherche Method and device for photothermal imaging tiny particles immersed in a given medium
US7768654B2 (en) * 2006-05-02 2010-08-03 California Institute Of Technology On-chip phase microscope/beam profiler based on differential interference contrast and/or surface plasmon assisted interference
KR100894840B1 (ko) 2007-07-12 2009-04-24 (주)켄트 표면 결함 검사 장치
JP4716148B1 (ja) * 2010-03-30 2011-07-06 レーザーテック株式会社 検査装置並びに欠陥分類方法及び欠陥検出方法
JP5725501B2 (ja) * 2011-02-22 2015-05-27 レーザーテック株式会社 検査装置
JP4674382B1 (ja) * 2010-04-07 2011-04-20 レーザーテック株式会社 検査装置及び欠陥検査方法
JP5814684B2 (ja) * 2010-09-03 2015-11-17 オリンパス株式会社 位相物体の可視化方法及び可視化装置
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US10539612B2 (en) * 2015-05-20 2020-01-21 Kla-Tencor Corporation Voltage contrast based fault and defect inference in logic chips
CN106404174A (zh) * 2016-09-07 2017-02-15 南京理工大学 高通量双折射干涉成像光谱仪装置及其成像方法
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification

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Publication number Priority date Publication date Assignee Title
US20010013936A1 (en) 1998-11-18 2001-08-16 Kla Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
US20030218742A1 (en) 2002-05-24 2003-11-27 Daniel R. Fashant Methods and systems for substrate surface evaluation
US20110242312A1 (en) 2010-03-30 2011-10-06 Lasertec Corporation Inspection system and inspection method

Also Published As

Publication number Publication date
KR20210041100A (ko) 2021-04-14
TW202033948A (zh) 2020-09-16
JP2022502676A (ja) 2022-01-11
TWI804677B (zh) 2023-06-11
WO2020051046A1 (en) 2020-03-12
CN112654859A (zh) 2021-04-13
CN114858809B (zh) 2025-04-04
CN114858809A (zh) 2022-08-05
US11017520B2 (en) 2021-05-25
CN112654859B (zh) 2022-05-13
JP7219818B2 (ja) 2023-02-08
US20200074617A1 (en) 2020-03-05

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