CN114858809B - 用于缺陷分类的多波长干涉法 - Google Patents

用于缺陷分类的多波长干涉法 Download PDF

Info

Publication number
CN114858809B
CN114858809B CN202210550590.XA CN202210550590A CN114858809B CN 114858809 B CN114858809 B CN 114858809B CN 202210550590 A CN202210550590 A CN 202210550590A CN 114858809 B CN114858809 B CN 114858809B
Authority
CN
China
Prior art keywords
defect
illumination
sample
induced phase
inspection system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210550590.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN114858809A (zh
Inventor
A·曾
海伦·刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN114858809A publication Critical patent/CN114858809A/zh
Application granted granted Critical
Publication of CN114858809B publication Critical patent/CN114858809B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02015—Interferometers characterised by the beam path configuration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8858—Flaw counting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10141—Special mode during image acquisition
    • G06T2207/10152—Varying illumination

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Microscoopes, Condenser (AREA)
CN202210550590.XA 2018-09-04 2019-08-29 用于缺陷分类的多波长干涉法 Active CN114858809B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862726782P 2018-09-04 2018-09-04
US62/726,782 2018-09-04
US16/551,155 2019-08-26
US16/551,155 US11017520B2 (en) 2018-09-04 2019-08-26 Multi-wavelength interferometry for defect classification
PCT/US2019/048680 WO2020051046A1 (en) 2018-09-04 2019-08-29 Multi-wavelength interferometry for defect classification
CN201980057650.0A CN112654859B (zh) 2018-09-04 2019-08-29 用于缺陷分类的检验系统和方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980057650.0A Division CN112654859B (zh) 2018-09-04 2019-08-29 用于缺陷分类的检验系统和方法

Publications (2)

Publication Number Publication Date
CN114858809A CN114858809A (zh) 2022-08-05
CN114858809B true CN114858809B (zh) 2025-04-04

Family

ID=69639402

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202210550590.XA Active CN114858809B (zh) 2018-09-04 2019-08-29 用于缺陷分类的多波长干涉法
CN201980057650.0A Active CN112654859B (zh) 2018-09-04 2019-08-29 用于缺陷分类的检验系统和方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201980057650.0A Active CN112654859B (zh) 2018-09-04 2019-08-29 用于缺陷分类的检验系统和方法

Country Status (6)

Country Link
US (1) US11017520B2 (https=)
JP (1) JP7219818B2 (https=)
KR (1) KR102545425B1 (https=)
CN (2) CN114858809B (https=)
TW (1) TWI804677B (https=)
WO (1) WO2020051046A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11017520B2 (en) * 2018-09-04 2021-05-25 Kla Corporation Multi-wavelength interferometry for defect classification
US11713959B2 (en) * 2021-03-17 2023-08-01 Kla Corporation Overlay metrology using spectroscopic phase
WO2023135681A1 (ja) * 2022-01-12 2023-07-20 株式会社日立ハイテク 表面検査装置
CN115718068B (zh) * 2022-10-21 2025-07-04 华南师范大学 一种动态定量微分干涉相衬显微成像系统及方法
US20250060324A1 (en) * 2023-08-14 2025-02-20 Tokyo Electron Limited Hybrid x-ray and optical metrology and navigation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112654859A (zh) * 2018-09-04 2021-04-13 科磊股份有限公司 用于缺陷分类的多波长干涉法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61260211A (ja) * 1985-05-15 1986-11-18 Hitachi Ltd 自動異物検出方法及びその装置
JP3047646B2 (ja) * 1991-10-31 2000-05-29 株式会社日立製作所 欠陥検出方法及びその装置
US5710631A (en) * 1995-04-11 1998-01-20 International Business Machines Corporation Apparatus and method for storing interferometric images of scanned defects and for subsequent static analysis of such defects
JPH08327557A (ja) 1995-06-02 1996-12-13 Nikon Corp 欠陥検査装置及び方法
DE69737513T2 (de) * 1996-04-25 2007-12-13 Genicon Sciences Corp., San Diego Teilchenförmiges markierungsmittel verwendendes analytassay
US6171764B1 (en) * 1998-08-22 2001-01-09 Chia-Lin Ku Method for reducing intensity of reflected rays encountered during process of photolithography
US6999183B2 (en) * 1998-11-18 2006-02-14 Kla-Tencor Corporation Detection system for nanometer scale topographic measurements of reflective surfaces
US6433876B1 (en) * 1999-06-01 2002-08-13 Optical Perspectives Group, L.L.C. Multiple wavelength or multiple shear distance quantitative differential interference contrast microscopy
JP4543141B2 (ja) * 1999-07-13 2010-09-15 レーザーテック株式会社 欠陥検査装置
US6674522B2 (en) * 2001-05-04 2004-01-06 Kla-Tencor Technologies Corporation Efficient phase defect detection system and method
US6995847B2 (en) * 2002-05-24 2006-02-07 Honeywell International Inc. Methods and systems for substrate surface evaluation
US6756591B1 (en) * 2003-03-14 2004-06-29 Centre National De La Recherche Method and device for photothermal imaging tiny particles immersed in a given medium
US7768654B2 (en) * 2006-05-02 2010-08-03 California Institute Of Technology On-chip phase microscope/beam profiler based on differential interference contrast and/or surface plasmon assisted interference
KR100894840B1 (ko) 2007-07-12 2009-04-24 (주)켄트 표면 결함 검사 장치
US20110242312A1 (en) * 2010-03-30 2011-10-06 Lasertec Corporation Inspection system and inspection method
JP4716148B1 (ja) * 2010-03-30 2011-07-06 レーザーテック株式会社 検査装置並びに欠陥分類方法及び欠陥検出方法
JP5725501B2 (ja) * 2011-02-22 2015-05-27 レーザーテック株式会社 検査装置
JP4674382B1 (ja) * 2010-04-07 2011-04-20 レーザーテック株式会社 検査装置及び欠陥検査方法
JP5814684B2 (ja) * 2010-09-03 2015-11-17 オリンパス株式会社 位相物体の可視化方法及び可視化装置
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9052190B2 (en) * 2013-03-12 2015-06-09 Kla-Tencor Corporation Bright-field differential interference contrast system with scanning beams of round and elliptical cross-sections
US9606069B2 (en) * 2014-06-25 2017-03-28 Kla-Tencor Corporation Method, apparatus and system for generating multiple spatially separated inspection regions on a substrate
US9726615B2 (en) * 2014-07-22 2017-08-08 Kla-Tencor Corporation System and method for simultaneous dark field and phase contrast inspection
US10539612B2 (en) * 2015-05-20 2020-01-21 Kla-Tencor Corporation Voltage contrast based fault and defect inference in logic chips
CN106404174A (zh) * 2016-09-07 2017-02-15 南京理工大学 高通量双折射干涉成像光谱仪装置及其成像方法
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112654859A (zh) * 2018-09-04 2021-04-13 科磊股份有限公司 用于缺陷分类的多波长干涉法

Also Published As

Publication number Publication date
KR20210041100A (ko) 2021-04-14
TW202033948A (zh) 2020-09-16
JP2022502676A (ja) 2022-01-11
TWI804677B (zh) 2023-06-11
WO2020051046A1 (en) 2020-03-12
CN112654859A (zh) 2021-04-13
CN114858809A (zh) 2022-08-05
US11017520B2 (en) 2021-05-25
CN112654859B (zh) 2022-05-13
JP7219818B2 (ja) 2023-02-08
US20200074617A1 (en) 2020-03-05
KR102545425B1 (ko) 2023-06-20

Similar Documents

Publication Publication Date Title
CN114858809B (zh) 用于缺陷分类的多波长干涉法
US10937705B2 (en) Sample inspection using topography
CN110301038B (zh) 用于缺陷材料分类的系统及方法
EP2256487B1 (en) Methods for inspection of a specimen using different inspection parameters
TWI757339B (zh) 用於同時多方向雷射晶圓檢測之設備
US20170011495A1 (en) Methods and apparatus for speckle suppression in laser dark-field systems
US20160153914A1 (en) Inspection systems and techniques with enhanced detection
KR102272697B1 (ko) 분광 타원편광 측정 시스템과 방법 및 데이터 분석 장치와 방법
US12045009B2 (en) Digital holography microscope (DHM), and inspection method and semiconductor manufacturing method using the DHM
WO2005026658A1 (en) Interference scatterometer
KR20200071563A (ko) Hsi 기반 검사 장치
KR20200023503A (ko) 유효 매체 근사를 사용한 다층막 계측
US8582094B1 (en) Systems and methods for inspecting specimens including specimens that have a substantially rough uppermost layer
KR20220065043A (ko) 간섭 결함 검사에서의 샘플 표면 편광 변형
JP2013061185A (ja) パターン検査装置およびパターン検査方法
US10429319B2 (en) Inspection system including parallel imaging paths with multiple and selectable spectral bands
JP7778154B2 (ja) ダイスクリーニングシステムおよび方法
KR20260032899A (ko) Cmos 언더 어레이(cua) 구조가 존재하는 경우 cua 구조의 분류와 유효 매질 모델을 사용한 계측
CN121941916A (zh) 光谱差量计量
JP2010101713A (ja) パターン検査装置及びパターン検査方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant