TWI801125B - 具有擋板的氣體供應構件 - Google Patents

具有擋板的氣體供應構件 Download PDF

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Publication number
TWI801125B
TWI801125B TW111104449A TW111104449A TWI801125B TW I801125 B TWI801125 B TW I801125B TW 111104449 A TW111104449 A TW 111104449A TW 111104449 A TW111104449 A TW 111104449A TW I801125 B TWI801125 B TW I801125B
Authority
TW
Taiwan
Prior art keywords
baffle
gas supply
supply member
gas
supply
Prior art date
Application number
TW111104449A
Other languages
English (en)
Other versions
TW202219316A (zh
Inventor
卡提克 薛
維許瓦思庫瑪 潘迪
卡拉許 布拉漢
塞拉朱 塔拉法爾祖拉
雷尼 喬治
艾瑞克木原 生野
菲利浦Ａ 伯提妮
羅傑 柯堤斯
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202219316A publication Critical patent/TW202219316A/zh
Application granted granted Critical
Publication of TWI801125B publication Critical patent/TWI801125B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
TW111104449A 2017-07-31 2018-07-31 具有擋板的氣體供應構件 TWI801125B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN201741027099 2017-07-31
IN201741027099 2017-07-31

Publications (2)

Publication Number Publication Date
TW202219316A TW202219316A (zh) 2022-05-16
TWI801125B true TWI801125B (zh) 2023-05-01

Family

ID=65138136

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107126430A TWI758521B (zh) 2017-07-31 2018-07-31 具有擋板的氣體供應構件
TW111104449A TWI801125B (zh) 2017-07-31 2018-07-31 具有擋板的氣體供應構件

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107126430A TWI758521B (zh) 2017-07-31 2018-07-31 具有擋板的氣體供應構件

Country Status (5)

Country Link
US (2) US11124878B2 (zh)
JP (2) JP6938761B2 (zh)
KR (3) KR102585595B1 (zh)
TW (2) TWI758521B (zh)
WO (1) WO2019027863A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102585595B1 (ko) 2017-07-31 2023-10-10 어플라이드 머티어리얼스, 인코포레이티드 배플을 갖는 가스 공급 부재
EP3980576A4 (en) * 2019-06-06 2023-06-21 Picosun Oy SUBSTRATE PROCESSING METHOD AND APPARATUS
US20220154338A1 (en) * 2020-11-13 2022-05-19 Applied Materials, Inc. Apparatus and system for delivering gas to a process chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102017068A (zh) * 2008-05-05 2011-04-13 应用材料股份有限公司 具有增加的流动均匀度的狭缝阀
TWM490189U (en) * 2012-12-28 2014-11-11 Sputtering Components Inc Plasma enhanced chemical vapor deposition (PECVD) source
CN105556640A (zh) * 2013-09-25 2016-05-04 应用材料公司 用于腔室端口的气体设备、系统及方法

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KR100886674B1 (ko) * 2004-08-02 2009-03-04 어플라이드 머티어리얼스, 인코포레이티드 챔버 도어용 플로팅 밀폐부를 제공하기 위한 방법 및 장치
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102017068A (zh) * 2008-05-05 2011-04-13 应用材料股份有限公司 具有增加的流动均匀度的狭缝阀
TWM490189U (en) * 2012-12-28 2014-11-11 Sputtering Components Inc Plasma enhanced chemical vapor deposition (PECVD) source
CN105556640A (zh) * 2013-09-25 2016-05-04 应用材料公司 用于腔室端口的气体设备、系统及方法

Also Published As

Publication number Publication date
TWI758521B (zh) 2022-03-21
KR102437093B1 (ko) 2022-08-26
KR20210158872A (ko) 2021-12-31
KR102343757B1 (ko) 2021-12-27
TW201910550A (zh) 2019-03-16
US20210262093A1 (en) 2021-08-26
TW202219316A (zh) 2022-05-16
JP6938761B2 (ja) 2021-09-22
US20190032216A1 (en) 2019-01-31
JP2022000901A (ja) 2022-01-04
US11885021B2 (en) 2024-01-30
JP2020529727A (ja) 2020-10-08
WO2019027863A1 (en) 2019-02-07
US11124878B2 (en) 2021-09-21
JP7236512B2 (ja) 2023-03-09
KR102585595B1 (ko) 2023-10-10
KR20200024339A (ko) 2020-03-06
KR20220123146A (ko) 2022-09-05

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