TWI799918B - B4快閃記憶體的程式設計方法 - Google Patents

B4快閃記憶體的程式設計方法 Download PDF

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Publication number
TWI799918B
TWI799918B TW110126469A TW110126469A TWI799918B TW I799918 B TWI799918 B TW I799918B TW 110126469 A TW110126469 A TW 110126469A TW 110126469 A TW110126469 A TW 110126469A TW I799918 B TWI799918 B TW I799918B
Authority
TW
Taiwan
Prior art keywords
flash memory
programming method
programming
flash
memory
Prior art date
Application number
TW110126469A
Other languages
English (en)
Other versions
TW202219959A (zh
Inventor
聶虹
陳精緯
Original Assignee
大陸商中天弘宇集成電路有限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 大陸商中天弘宇集成電路有限責任公司 filed Critical 大陸商中天弘宇集成電路有限責任公司
Publication of TW202219959A publication Critical patent/TW202219959A/zh
Application granted granted Critical
Publication of TWI799918B publication Critical patent/TWI799918B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW110126469A 2020-11-13 2021-07-19 B4快閃記憶體的程式設計方法 TWI799918B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011269500.7A CN112382327B (zh) 2020-11-13 2020-11-13 B4快闪存储器的编程方法
CN202011269500.7 2020-11-13

Publications (2)

Publication Number Publication Date
TW202219959A TW202219959A (zh) 2022-05-16
TWI799918B true TWI799918B (zh) 2023-04-21

Family

ID=74583879

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110126469A TWI799918B (zh) 2020-11-13 2021-07-19 B4快閃記憶體的程式設計方法

Country Status (5)

Country Link
US (1) US11348645B1 (zh)
JP (1) JP6898537B1 (zh)
KR (1) KR102318649B1 (zh)
CN (1) CN112382327B (zh)
TW (1) TWI799918B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113921065A (zh) * 2021-09-30 2022-01-11 中天弘宇集成电路有限责任公司 存储器的编程方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761121A (en) * 1996-10-31 1998-06-02 Programmable Microelectronics Corporation PMOS single-poly non-volatile memory structure
US20030031055A1 (en) * 1999-12-17 2003-02-13 Micron Technology, Inc. Flash memory cell for high efficiency programming
US20100283099A1 (en) * 2007-10-09 2010-11-11 Genusion, Inc. Non-Volatile Semiconductor Memory Device and Manufacturing Method Thereof
US20110176365A1 (en) * 2007-11-01 2011-07-21 Liu David K Y Two terminal programmable hot channel electron non-volatile memory

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4090570B2 (ja) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法
CN100461425C (zh) * 2005-08-15 2009-02-11 力晶半导体股份有限公司 P型沟道存储器的操作方法
JP5010192B2 (ja) * 2006-06-22 2012-08-29 株式会社東芝 不揮発性半導体記憶装置
KR100800943B1 (ko) * 2006-08-29 2008-02-04 동부일렉트로닉스 주식회사 플래시 메모리 셀의 프로그래밍 장치
US8106443B2 (en) * 2007-10-09 2012-01-31 Genusion, Inc. Non-volatile semiconductor memory device
US7916551B2 (en) * 2007-11-06 2011-03-29 Macronix International Co., Ltd. Method of programming cell in memory and memory apparatus utilizing the method
US20090166705A1 (en) * 2007-12-26 2009-07-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing thereof
US8000137B2 (en) * 2008-03-27 2011-08-16 Genusion, Inc. Nonvolatile semiconductor memory device and usage method thereof
TWI389321B (zh) * 2008-07-08 2013-03-11 Acer Inc 程式化非揮發性記憶體之方法
US9082490B2 (en) * 2013-06-18 2015-07-14 Flashsilicon Incorporation Ultra-low power programming method for N-channel semiconductor non-volatile memory
CN105470258B (zh) * 2014-06-18 2020-04-24 上海华力微电子有限公司 SONOS B4-flash存储器
CN105226065B (zh) * 2015-08-20 2018-05-01 上海华力微电子有限公司 一种双位sonos存储器及其编译、擦除和读取方法
JP6882054B2 (ja) * 2017-05-01 2021-06-02 ローム株式会社 不揮発性半導体記憶装置
KR102652757B1 (ko) * 2018-11-02 2024-04-02 브이메모리 주식회사 변동 저저항 라인 비휘발성 메모리 소자 및 이의 동작 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5761121A (en) * 1996-10-31 1998-06-02 Programmable Microelectronics Corporation PMOS single-poly non-volatile memory structure
US20030031055A1 (en) * 1999-12-17 2003-02-13 Micron Technology, Inc. Flash memory cell for high efficiency programming
US20100283099A1 (en) * 2007-10-09 2010-11-11 Genusion, Inc. Non-Volatile Semiconductor Memory Device and Manufacturing Method Thereof
US20110176365A1 (en) * 2007-11-01 2011-07-21 Liu David K Y Two terminal programmable hot channel electron non-volatile memory

Also Published As

Publication number Publication date
JP2022078923A (ja) 2022-05-25
JP6898537B1 (ja) 2021-07-07
KR102318649B1 (ko) 2021-10-28
TW202219959A (zh) 2022-05-16
CN112382327A (zh) 2021-02-19
CN112382327B (zh) 2021-07-23
US20220157383A1 (en) 2022-05-19
US11348645B1 (en) 2022-05-31

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