TWI799651B - 半導體矽晶圓之清洗處理裝置及清洗方法 - Google Patents
半導體矽晶圓之清洗處理裝置及清洗方法 Download PDFInfo
- Publication number
- TWI799651B TWI799651B TW108135616A TW108135616A TWI799651B TW I799651 B TWI799651 B TW I799651B TW 108135616 A TW108135616 A TW 108135616A TW 108135616 A TW108135616 A TW 108135616A TW I799651 B TWI799651 B TW I799651B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing device
- silicon wafer
- semiconductor silicon
- cleaning
- cleaning method
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-192672 | 2018-10-11 | ||
JP2018192672A JP6988761B2 (ja) | 2018-10-11 | 2018-10-11 | 半導体シリコンウェーハの洗浄処理装置および洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202044396A TW202044396A (zh) | 2020-12-01 |
TWI799651B true TWI799651B (zh) | 2023-04-21 |
Family
ID=70163677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108135616A TWI799651B (zh) | 2018-10-11 | 2019-10-02 | 半導體矽晶圓之清洗處理裝置及清洗方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220059343A1 (zh) |
EP (1) | EP3866185A4 (zh) |
JP (1) | JP6988761B2 (zh) |
KR (1) | KR20210068017A (zh) |
CN (1) | CN112673458A (zh) |
TW (1) | TWI799651B (zh) |
WO (1) | WO2020075448A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7020507B2 (ja) * | 2020-04-28 | 2022-02-16 | 信越半導体株式会社 | 半導体ウェーハの洗浄方法 |
JP7422606B2 (ja) | 2020-05-25 | 2024-01-26 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
CN113223934A (zh) * | 2021-04-30 | 2021-08-06 | 苏州协鑫光伏科技有限公司 | 一种210大尺寸硅片的清洗方法 |
EP4266353A1 (de) * | 2022-04-20 | 2023-10-25 | Siltronic AG | Verfahren zum reinigen einer halbleiterscheibe nach einer politur mittels cmp in einer reinigungsstrasse |
CN114864744B (zh) * | 2022-05-05 | 2024-04-02 | 普乐新能源科技(泰兴)有限公司 | 一种纳米硅浆料的高效清洗方法及系统 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102343A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 半導体ウェーハの洗浄方法 |
TW201241912A (en) * | 2010-12-22 | 2012-10-16 | Lam Res Ag | Process for treating a semiconductor wafer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08107100A (ja) * | 1994-10-06 | 1996-04-23 | Sony Corp | 薬液処理方法及び薬液処理装置 |
JP2003010795A (ja) * | 2001-06-29 | 2003-01-14 | Sekisui Chem Co Ltd | 基板洗浄装置及び洗浄方法 |
DE10239773B3 (de) * | 2002-08-29 | 2004-02-26 | Wacker Siltronic Ag | Halbleiterscheibe und Verfahren zur Reinigung einer Halbleiterscheibe |
JP4827587B2 (ja) * | 2006-03-31 | 2011-11-30 | Sumco Techxiv株式会社 | シリコンウェーハの製造方法 |
CN104380091B (zh) | 2012-06-28 | 2016-06-22 | 西门子医疗保健诊断公司 | 信号放大的读出器设备和方法 |
JP2015023069A (ja) | 2013-07-17 | 2015-02-02 | 株式会社Screenホールディングス | 基板洗浄装置および基板洗浄方法 |
CN104157766A (zh) * | 2014-08-06 | 2014-11-19 | 韩忠贺 | 一种芯片的砷化镓衬底的高温蚀刻方法 |
JP6610443B2 (ja) * | 2016-06-07 | 2019-11-27 | 信越半導体株式会社 | 半導体シリコンウェーハの表面欠陥検査方法 |
-
2018
- 2018-10-11 JP JP2018192672A patent/JP6988761B2/ja active Active
-
2019
- 2019-09-17 KR KR1020217008258A patent/KR20210068017A/ko not_active Application Discontinuation
- 2019-09-17 WO PCT/JP2019/036261 patent/WO2020075448A1/ja unknown
- 2019-09-17 EP EP19871349.7A patent/EP3866185A4/en active Pending
- 2019-09-17 US US17/275,145 patent/US20220059343A1/en active Pending
- 2019-09-17 CN CN201980058971.2A patent/CN112673458A/zh active Pending
- 2019-10-02 TW TW108135616A patent/TWI799651B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102343A (ja) * | 1999-09-28 | 2001-04-13 | Sony Corp | 半導体ウェーハの洗浄方法 |
TW201241912A (en) * | 2010-12-22 | 2012-10-16 | Lam Res Ag | Process for treating a semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
WO2020075448A1 (ja) | 2020-04-16 |
JP2020061483A (ja) | 2020-04-16 |
US20220059343A1 (en) | 2022-02-24 |
KR20210068017A (ko) | 2021-06-08 |
EP3866185A1 (en) | 2021-08-18 |
CN112673458A (zh) | 2021-04-16 |
TW202044396A (zh) | 2020-12-01 |
JP6988761B2 (ja) | 2022-01-05 |
EP3866185A4 (en) | 2022-07-13 |
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