CN114864744B - 一种纳米硅浆料的高效清洗方法及系统 - Google Patents
一种纳米硅浆料的高效清洗方法及系统 Download PDFInfo
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- CN114864744B CN114864744B CN202210480560.6A CN202210480560A CN114864744B CN 114864744 B CN114864744 B CN 114864744B CN 202210480560 A CN202210480560 A CN 202210480560A CN 114864744 B CN114864744 B CN 114864744B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000002002 slurry Substances 0.000 title claims abstract description 35
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 126
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 241000252506 Characiformes Species 0.000 claims abstract description 35
- 238000001035 drying Methods 0.000 claims abstract description 31
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims description 125
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 230000005587 bubbling Effects 0.000 claims description 37
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 34
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 19
- 239000011259 mixed solution Substances 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 10
- 238000010926 purge Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000003344 environmental pollutant Substances 0.000 abstract description 7
- 231100000719 pollutant Toxicity 0.000 abstract description 7
- 238000005406 washing Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 125000004122 cyclic group Chemical group 0.000 abstract description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- 238000004220 aggregation Methods 0.000 abstract description 2
- 230000002776 aggregation Effects 0.000 abstract description 2
- 239000011859 microparticle Substances 0.000 abstract description 2
- 230000003746 surface roughness Effects 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 22
- 230000007935 neutral effect Effects 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 12
- 210000004027 cell Anatomy 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011146 organic particle Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002957 persistent organic pollutant Substances 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
- -1 salt ions Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
ITEM | Eta(%) | Voc(V) | Isc(A) | Rs(mΩ) | Rsh(Ω) | FF |
对比例 | 24.84 | 0.726 | 13.825 | 1.178 | 2322 | 82.55 |
实施例 | 24.94 | 0.728 | 13.814 | 1.177 | 2174 | 82.72 |
Claims (9)
Priority Applications (1)
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CN202210480560.6A CN114864744B (zh) | 2022-05-05 | 2022-05-05 | 一种纳米硅浆料的高效清洗方法及系统 |
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CN202210480560.6A CN114864744B (zh) | 2022-05-05 | 2022-05-05 | 一种纳米硅浆料的高效清洗方法及系统 |
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CN114864744A CN114864744A (zh) | 2022-08-05 |
CN114864744B true CN114864744B (zh) | 2024-04-02 |
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Families Citing this family (2)
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CN115502157B (zh) * | 2022-10-12 | 2024-07-09 | 上海中欣晶圆半导体科技有限公司 | 一种半导体硅衬底片包装盒的清洗及保存方法 |
CN115709196A (zh) * | 2022-10-17 | 2023-02-24 | 杭州中欣晶圆半导体股份有限公司 | 改善最终洗净后颗粒沾污的装置及其控制方法 |
Citations (11)
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WO2012150669A1 (ja) * | 2011-05-02 | 2012-11-08 | 三菱電機株式会社 | シリコン基板の洗浄方法および太陽電池の製造方法 |
CN103433233A (zh) * | 2013-08-22 | 2013-12-11 | 英利集团有限公司 | 晶硅腐蚀浆料的清洗方法、晶硅太阳能电池及其制作方法 |
JP2015149512A (ja) * | 2015-05-25 | 2015-08-20 | 栗田工業株式会社 | シリコンウェハ清浄化方法及びシリコンウェハ清浄化装置 |
JP2016032073A (ja) * | 2014-07-30 | 2016-03-07 | 三菱電機株式会社 | 太陽電池セルの製造方法および太陽電池セルの製造装置 |
CN107275423A (zh) * | 2017-06-06 | 2017-10-20 | 英利能源(中国)有限公司 | 一种提升黑硅电池转换效率的处理方法 |
CN110416369A (zh) * | 2019-08-21 | 2019-11-05 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Perc电池清洗制绒工艺及系统 |
CN110473810A (zh) * | 2019-08-21 | 2019-11-19 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 单晶硅制绒工艺及装置 |
CN110665893A (zh) * | 2019-09-30 | 2020-01-10 | 内蒙古中环光伏材料有限公司 | 一种超大尺寸单晶硅片的清洗方法 |
CN210325829U (zh) * | 2019-08-21 | 2020-04-14 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种perc电池清洗制绒系统 |
WO2020075448A1 (ja) * | 2018-10-11 | 2020-04-16 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄処理装置および洗浄方法 |
CN111211042A (zh) * | 2020-01-13 | 2020-05-29 | 天津中环领先材料技术有限公司 | 一种提高边抛大直径硅片表面洁净度的清洗工艺 |
Family Cites Families (1)
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CN106549083B (zh) * | 2016-06-27 | 2018-08-24 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池绒面结构的制备方法 |
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- 2022-05-05 CN CN202210480560.6A patent/CN114864744B/zh active Active
Patent Citations (11)
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WO2012150669A1 (ja) * | 2011-05-02 | 2012-11-08 | 三菱電機株式会社 | シリコン基板の洗浄方法および太陽電池の製造方法 |
CN103433233A (zh) * | 2013-08-22 | 2013-12-11 | 英利集团有限公司 | 晶硅腐蚀浆料的清洗方法、晶硅太阳能电池及其制作方法 |
JP2016032073A (ja) * | 2014-07-30 | 2016-03-07 | 三菱電機株式会社 | 太陽電池セルの製造方法および太陽電池セルの製造装置 |
JP2015149512A (ja) * | 2015-05-25 | 2015-08-20 | 栗田工業株式会社 | シリコンウェハ清浄化方法及びシリコンウェハ清浄化装置 |
CN107275423A (zh) * | 2017-06-06 | 2017-10-20 | 英利能源(中国)有限公司 | 一种提升黑硅电池转换效率的处理方法 |
WO2020075448A1 (ja) * | 2018-10-11 | 2020-04-16 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄処理装置および洗浄方法 |
CN110416369A (zh) * | 2019-08-21 | 2019-11-05 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Perc电池清洗制绒工艺及系统 |
CN110473810A (zh) * | 2019-08-21 | 2019-11-19 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 单晶硅制绒工艺及装置 |
CN210325829U (zh) * | 2019-08-21 | 2020-04-14 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种perc电池清洗制绒系统 |
CN110665893A (zh) * | 2019-09-30 | 2020-01-10 | 内蒙古中环光伏材料有限公司 | 一种超大尺寸单晶硅片的清洗方法 |
CN111211042A (zh) * | 2020-01-13 | 2020-05-29 | 天津中环领先材料技术有限公司 | 一种提高边抛大直径硅片表面洁净度的清洗工艺 |
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