TWI799403B - 具有射頻隔離式加熱器的靜電吸盤 - Google Patents

具有射頻隔離式加熱器的靜電吸盤 Download PDF

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Publication number
TWI799403B
TWI799403B TW107101531A TW107101531A TWI799403B TW I799403 B TWI799403 B TW I799403B TW 107101531 A TW107101531 A TW 107101531A TW 107101531 A TW107101531 A TW 107101531A TW I799403 B TWI799403 B TW I799403B
Authority
TW
Taiwan
Prior art keywords
metal layer
heater
flexible body
space
metal
Prior art date
Application number
TW107101531A
Other languages
English (en)
Chinese (zh)
Other versions
TW201836056A (zh
Inventor
大衛 班傑明森
肯 夏茲
迪米奇 路柏曼斯基
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201836056A publication Critical patent/TW201836056A/zh
Application granted granted Critical
Publication of TWI799403B publication Critical patent/TWI799403B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/34—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater flexible, e.g. heating nets or webs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
TW107101531A 2017-01-20 2018-01-16 具有射頻隔離式加熱器的靜電吸盤 TWI799403B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/411,896 2017-01-20
US15/411,896 US20180213608A1 (en) 2017-01-20 2017-01-20 Electrostatic chuck with radio frequency isolated heaters

Publications (2)

Publication Number Publication Date
TW201836056A TW201836056A (zh) 2018-10-01
TWI799403B true TWI799403B (zh) 2023-04-21

Family

ID=62906927

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107101531A TWI799403B (zh) 2017-01-20 2018-01-16 具有射頻隔離式加熱器的靜電吸盤

Country Status (6)

Country Link
US (1) US20180213608A1 (cg-RX-API-DMAC7.html)
JP (1) JP2020506508A (cg-RX-API-DMAC7.html)
KR (1) KR20190100976A (cg-RX-API-DMAC7.html)
CN (1) CN110226222B (cg-RX-API-DMAC7.html)
TW (1) TWI799403B (cg-RX-API-DMAC7.html)
WO (1) WO2018136335A1 (cg-RX-API-DMAC7.html)

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JP2022534141A (ja) * 2018-10-12 2022-07-28 アプライド マテリアルズ インコーポレイテッド ヒータが一体化されたチャンバリッド
KR102164132B1 (ko) * 2018-11-28 2020-10-12 한국생산기술연구원 멀티 프로버용 척 조립체 및 채널
IL283621B2 (en) 2018-12-21 2025-04-01 Asml Holding Nv Retinal subfield thermal control
WO2020251876A1 (en) * 2019-06-10 2020-12-17 Lam Research Corporation Power and data transmission to substrate support in plasma chambers via optical fiber
CN112992635B (zh) * 2019-12-13 2023-10-24 中微半导体设备(上海)股份有限公司 一种晶圆固定装置及其形成方法、等离子体处理设备
KR102867189B1 (ko) * 2020-03-31 2025-09-30 어플라이드 머티어리얼스, 인코포레이티드 고온 마이크로-존 정전 척
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
CN211957596U (zh) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
JP7564060B2 (ja) * 2021-06-08 2024-10-08 東京エレクトロン株式会社 プラズマ処理装置
US12581880B2 (en) * 2022-11-02 2026-03-17 Applied Materials, Inc. Faraday faceplate
WO2025205043A1 (ja) * 2024-03-28 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び基板支持台
CN119626881B (zh) * 2024-11-22 2026-05-08 北京北方华创微电子装备有限公司 半导体工艺设备
US12652731B1 (en) 2025-10-21 2026-06-09 Tystar Corporation Hybrid induction-resistive heating system for processing next generation electronic materials

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TW201327719A (zh) * 2011-09-21 2013-07-01 蘭姆研究公司 用於半導體處理之具有平面熱區的熱板
US20130189848A1 (en) * 2008-03-21 2013-07-25 Michael D. Willwerth Shielded lid heater assembly
US20140165915A1 (en) * 2012-12-14 2014-06-19 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
US20140177123A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Single-body electrostatic chuck
TW201511176A (zh) * 2013-07-22 2015-03-16 Advanced Micro Fabrication Equipment Shanghai Co Ltd 等離子體處理裝置及其溫度測試裝置
US20160027678A1 (en) * 2014-07-23 2016-01-28 Applied Materials, Inc. Tunable temperature controlled substrate support assembly

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US6519835B1 (en) * 2000-08-18 2003-02-18 Watlow Polymer Technologies Method of formable thermoplastic laminate heated element assembly
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US20090152276A1 (en) * 2004-10-07 2009-06-18 All-Clad Metalcrafters Llc Griddle Plate and Cookware Having a Vacuum Bonded, High Conductivity, Low Density Carbon Foam Core Plate
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US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9404176B2 (en) * 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9984866B2 (en) * 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
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TW201448108A (zh) * 2013-03-12 2014-12-16 應用材料股份有限公司 用於電漿處理腔室的多重區域加熱及冷卻靜電夾盤
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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130189848A1 (en) * 2008-03-21 2013-07-25 Michael D. Willwerth Shielded lid heater assembly
TW201327719A (zh) * 2011-09-21 2013-07-01 蘭姆研究公司 用於半導體處理之具有平面熱區的熱板
US20140165915A1 (en) * 2012-12-14 2014-06-19 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
US20140177123A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Single-body electrostatic chuck
TW201511176A (zh) * 2013-07-22 2015-03-16 Advanced Micro Fabrication Equipment Shanghai Co Ltd 等離子體處理裝置及其溫度測試裝置
US20160027678A1 (en) * 2014-07-23 2016-01-28 Applied Materials, Inc. Tunable temperature controlled substrate support assembly

Also Published As

Publication number Publication date
WO2018136335A1 (en) 2018-07-26
KR20190100976A (ko) 2019-08-29
US20180213608A1 (en) 2018-07-26
JP2020506508A (ja) 2020-02-27
CN110226222B (zh) 2023-04-07
TW201836056A (zh) 2018-10-01
CN110226222A (zh) 2019-09-10

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