CN110226222B - 具有射频隔离式加热器的静电吸盘 - Google Patents

具有射频隔离式加热器的静电吸盘 Download PDF

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Publication number
CN110226222B
CN110226222B CN201880007192.5A CN201880007192A CN110226222B CN 110226222 B CN110226222 B CN 110226222B CN 201880007192 A CN201880007192 A CN 201880007192A CN 110226222 B CN110226222 B CN 110226222B
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CN
China
Prior art keywords
metal layer
heater
heater assembly
flexible body
assembly
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CN201880007192.5A
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English (en)
Chinese (zh)
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CN110226222A (zh
Inventor
大卫·班杰明森
肯·沙茨
德米特里·卢博米尔斯基
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN110226222A publication Critical patent/CN110226222A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/34—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater flexible, e.g. heating nets or webs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
CN201880007192.5A 2017-01-20 2018-01-12 具有射频隔离式加热器的静电吸盘 Active CN110226222B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/411,896 2017-01-20
US15/411,896 US20180213608A1 (en) 2017-01-20 2017-01-20 Electrostatic chuck with radio frequency isolated heaters
PCT/US2018/013631 WO2018136335A1 (en) 2017-01-20 2018-01-12 Electrostatic chuck with radio frequency isolated heaters

Publications (2)

Publication Number Publication Date
CN110226222A CN110226222A (zh) 2019-09-10
CN110226222B true CN110226222B (zh) 2023-04-07

Family

ID=62906927

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880007192.5A Active CN110226222B (zh) 2017-01-20 2018-01-12 具有射频隔离式加热器的静电吸盘

Country Status (6)

Country Link
US (1) US20180213608A1 (cg-RX-API-DMAC7.html)
JP (1) JP2020506508A (cg-RX-API-DMAC7.html)
KR (1) KR20190100976A (cg-RX-API-DMAC7.html)
CN (1) CN110226222B (cg-RX-API-DMAC7.html)
TW (1) TWI799403B (cg-RX-API-DMAC7.html)
WO (1) WO2018136335A1 (cg-RX-API-DMAC7.html)

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JP2022534141A (ja) * 2018-10-12 2022-07-28 アプライド マテリアルズ インコーポレイテッド ヒータが一体化されたチャンバリッド
KR102164132B1 (ko) * 2018-11-28 2020-10-12 한국생산기술연구원 멀티 프로버용 척 조립체 및 채널
IL283621B2 (en) 2018-12-21 2025-04-01 Asml Holding Nv Retinal subfield thermal control
WO2020251876A1 (en) * 2019-06-10 2020-12-17 Lam Research Corporation Power and data transmission to substrate support in plasma chambers via optical fiber
CN112992635B (zh) * 2019-12-13 2023-10-24 中微半导体设备(上海)股份有限公司 一种晶圆固定装置及其形成方法、等离子体处理设备
KR102867189B1 (ko) * 2020-03-31 2025-09-30 어플라이드 머티어리얼스, 인코포레이티드 고온 마이크로-존 정전 척
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
CN211957596U (zh) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
JP7564060B2 (ja) * 2021-06-08 2024-10-08 東京エレクトロン株式会社 プラズマ処理装置
US12581880B2 (en) * 2022-11-02 2026-03-17 Applied Materials, Inc. Faraday faceplate
WO2025205043A1 (ja) * 2024-03-28 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び基板支持台
CN119626881B (zh) * 2024-11-22 2026-05-08 北京北方华创微电子装备有限公司 半导体工艺设备
US12652731B1 (en) 2025-10-21 2026-06-09 Tystar Corporation Hybrid induction-resistive heating system for processing next generation electronic materials

Citations (3)

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US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
TW201534754A (zh) * 2014-02-07 2015-09-16 應用材料股份有限公司 像素化溫度控制的基板支撐組件

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US6519835B1 (en) * 2000-08-18 2003-02-18 Watlow Polymer Technologies Method of formable thermoplastic laminate heated element assembly
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US20090152276A1 (en) * 2004-10-07 2009-06-18 All-Clad Metalcrafters Llc Griddle Plate and Cookware Having a Vacuum Bonded, High Conductivity, Low Density Carbon Foam Core Plate
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
US20080066683A1 (en) * 2006-09-19 2008-03-20 General Electric Company Assembly with Enhanced Thermal Uniformity and Method For Making Thereof
WO2009117612A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Shielded lid heater assembly
US8461674B2 (en) * 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9404176B2 (en) * 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
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CN104410373B (zh) * 2012-06-14 2016-03-09 西凯渥资讯处理科技公司 包含相关系统、装置及方法的功率放大器模块
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CN104332378B (zh) * 2013-07-22 2016-09-07 中微半导体设备(上海)有限公司 等离子体处理装置及其温度测试装置
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KR102369706B1 (ko) * 2014-02-07 2022-03-04 엔테그리스, 아이엔씨. 정전 척 및 이의 제조 방법
KR102302723B1 (ko) * 2014-07-23 2021-09-14 어플라이드 머티어리얼스, 인코포레이티드 튜닝가능한 온도 제어되는 기판 지지 어셈블리

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
TW201534754A (zh) * 2014-02-07 2015-09-16 應用材料股份有限公司 像素化溫度控制的基板支撐組件

Also Published As

Publication number Publication date
WO2018136335A1 (en) 2018-07-26
TWI799403B (zh) 2023-04-21
KR20190100976A (ko) 2019-08-29
US20180213608A1 (en) 2018-07-26
JP2020506508A (ja) 2020-02-27
TW201836056A (zh) 2018-10-01
CN110226222A (zh) 2019-09-10

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