JP2020506508A - 高周波隔離ヒータを有する静電チャック - Google Patents

高周波隔離ヒータを有する静電チャック Download PDF

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Publication number
JP2020506508A
JP2020506508A JP2019539275A JP2019539275A JP2020506508A JP 2020506508 A JP2020506508 A JP 2020506508A JP 2019539275 A JP2019539275 A JP 2019539275A JP 2019539275 A JP2019539275 A JP 2019539275A JP 2020506508 A JP2020506508 A JP 2020506508A
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JP
Japan
Prior art keywords
metal layer
heater
heater assembly
metal
spatially adjustable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019539275A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020506508A5 (cg-RX-API-DMAC7.html
Inventor
デイヴィッド ベンジャミンソン
デイヴィッド ベンジャミンソン
ケン シャッツ
ケン シャッツ
ドミトリー ルボミルスキー
ドミトリー ルボミルスキー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2020506508A publication Critical patent/JP2020506508A/ja
Publication of JP2020506508A5 publication Critical patent/JP2020506508A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/34—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater flexible, e.g. heating nets or webs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/013—Heaters using resistive films or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
JP2019539275A 2017-01-20 2018-01-12 高周波隔離ヒータを有する静電チャック Pending JP2020506508A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/411,896 2017-01-20
US15/411,896 US20180213608A1 (en) 2017-01-20 2017-01-20 Electrostatic chuck with radio frequency isolated heaters
PCT/US2018/013631 WO2018136335A1 (en) 2017-01-20 2018-01-12 Electrostatic chuck with radio frequency isolated heaters

Publications (2)

Publication Number Publication Date
JP2020506508A true JP2020506508A (ja) 2020-02-27
JP2020506508A5 JP2020506508A5 (cg-RX-API-DMAC7.html) 2021-02-25

Family

ID=62906927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019539275A Pending JP2020506508A (ja) 2017-01-20 2018-01-12 高周波隔離ヒータを有する静電チャック

Country Status (6)

Country Link
US (1) US20180213608A1 (cg-RX-API-DMAC7.html)
JP (1) JP2020506508A (cg-RX-API-DMAC7.html)
KR (1) KR20190100976A (cg-RX-API-DMAC7.html)
CN (1) CN110226222B (cg-RX-API-DMAC7.html)
TW (1) TWI799403B (cg-RX-API-DMAC7.html)
WO (1) WO2018136335A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023520685A (ja) * 2020-03-31 2023-05-18 アプライド マテリアルズ インコーポレイテッド 高温マイクロゾーン静電チャック
WO2025205043A1 (ja) * 2024-03-28 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び基板支持台

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022534141A (ja) * 2018-10-12 2022-07-28 アプライド マテリアルズ インコーポレイテッド ヒータが一体化されたチャンバリッド
KR102164132B1 (ko) * 2018-11-28 2020-10-12 한국생산기술연구원 멀티 프로버용 척 조립체 및 채널
IL283621B2 (en) 2018-12-21 2025-04-01 Asml Holding Nv Retinal subfield thermal control
WO2020251876A1 (en) * 2019-06-10 2020-12-17 Lam Research Corporation Power and data transmission to substrate support in plasma chambers via optical fiber
CN112992635B (zh) * 2019-12-13 2023-10-24 中微半导体设备(上海)股份有限公司 一种晶圆固定装置及其形成方法、等离子体处理设备
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
CN211957596U (zh) * 2020-05-28 2020-11-17 北京鲁汶半导体科技有限公司 一种等离子体刻蚀系统及其可用于加热的法拉第屏蔽装置
JP7564060B2 (ja) * 2021-06-08 2024-10-08 東京エレクトロン株式会社 プラズマ処理装置
US12581880B2 (en) * 2022-11-02 2026-03-17 Applied Materials, Inc. Faraday faceplate
CN119626881B (zh) * 2024-11-22 2026-05-08 北京北方华创微电子装备有限公司 半导体工艺设备
US12652731B1 (en) 2025-10-21 2026-06-09 Tystar Corporation Hybrid induction-resistive heating system for processing next generation electronic materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160027678A1 (en) * 2014-07-23 2016-01-28 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
JP2016503962A (ja) * 2012-12-21 2016-02-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 単体静電チャック

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6519835B1 (en) * 2000-08-18 2003-02-18 Watlow Polymer Technologies Method of formable thermoplastic laminate heated element assembly
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US20090152276A1 (en) * 2004-10-07 2009-06-18 All-Clad Metalcrafters Llc Griddle Plate and Cookware Having a Vacuum Bonded, High Conductivity, Low Density Carbon Foam Core Plate
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
US20080066683A1 (en) * 2006-09-19 2008-03-20 General Electric Company Assembly with Enhanced Thermal Uniformity and Method For Making Thereof
WO2009117612A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Shielded lid heater assembly
US8461674B2 (en) * 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9508530B2 (en) * 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9404176B2 (en) * 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9984866B2 (en) * 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
CN104410373B (zh) * 2012-06-14 2016-03-09 西凯渥资讯处理科技公司 包含相关系统、装置及方法的功率放大器模块
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US10177014B2 (en) * 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
TW201448108A (zh) * 2013-03-12 2014-12-16 應用材料股份有限公司 用於電漿處理腔室的多重區域加熱及冷卻靜電夾盤
CN104332378B (zh) * 2013-07-22 2016-09-07 中微半导体设备(上海)有限公司 等离子体处理装置及其温度测试装置
WO2015042309A1 (en) * 2013-09-20 2015-03-26 Applied Materials, Inc. Substrate carrier with integrated electrostatic chuck
US9853579B2 (en) * 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
KR102369706B1 (ko) * 2014-02-07 2022-03-04 엔테그리스, 아이엔씨. 정전 척 및 이의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016503962A (ja) * 2012-12-21 2016-02-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 単体静電チャック
US20160027678A1 (en) * 2014-07-23 2016-01-28 Applied Materials, Inc. Tunable temperature controlled substrate support assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023520685A (ja) * 2020-03-31 2023-05-18 アプライド マテリアルズ インコーポレイテッド 高温マイクロゾーン静電チャック
JP7561867B2 (ja) 2020-03-31 2024-10-04 アプライド マテリアルズ インコーポレイテッド 高温マイクロゾーン静電チャック
WO2025205043A1 (ja) * 2024-03-28 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び基板支持台

Also Published As

Publication number Publication date
WO2018136335A1 (en) 2018-07-26
TWI799403B (zh) 2023-04-21
KR20190100976A (ko) 2019-08-29
US20180213608A1 (en) 2018-07-26
CN110226222B (zh) 2023-04-07
TW201836056A (zh) 2018-10-01
CN110226222A (zh) 2019-09-10

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