TWI798765B - 用於鍺種子層的組合物及使用其的方法 - Google Patents
用於鍺種子層的組合物及使用其的方法 Download PDFInfo
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- TWI798765B TWI798765B TW110127119A TW110127119A TWI798765B TW I798765 B TWI798765 B TW I798765B TW 110127119 A TW110127119 A TW 110127119A TW 110127119 A TW110127119 A TW 110127119A TW I798765 B TWI798765 B TW I798765B
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- silane
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- butylamino
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| KR20250127058A (ko) * | 2022-12-22 | 2025-08-26 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치 |
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| TW200424243A (en) * | 2003-04-05 | 2004-11-16 | Rohm & Haas Elect Mat | Organometallic compounds |
| TW201224193A (en) * | 2010-12-09 | 2012-06-16 | Air Prod & Chem | Aminovinylsilane for CVD and ALD SiO2 films |
| TW201910358A (zh) * | 2017-07-27 | 2019-03-16 | 瑞士商盛禧奧歐洲有限責任公司 | 橡膠之製造中特定胺基矽基單體之用途 |
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| US20020127883A1 (en) | 2001-01-09 | 2002-09-12 | Conti Richard A. | Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides |
| US6570032B1 (en) * | 2001-09-28 | 2003-05-27 | National Starch And Chemical Investment Holding Corporation | Compounds containing vinyl silane and electron donor or acceptor functionality |
| KR101275799B1 (ko) | 2006-11-21 | 2013-06-18 | 삼성전자주식회사 | 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법 |
| JP2010536170A (ja) | 2007-08-08 | 2010-11-25 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 半導体構造および製造方法 |
| US20090162973A1 (en) | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
| US8580993B2 (en) * | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
| US8889235B2 (en) | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| US9305779B2 (en) | 2009-08-11 | 2016-04-05 | Bae Systems Information And Electronic Systems Integration Inc. | Method for growing germanium epitaxial films |
| EP2470574B1 (en) * | 2009-08-24 | 2014-09-17 | Bridgestone Corporation | Process and catalyst system for polydiene production |
| US9037183B2 (en) | 2010-02-19 | 2015-05-19 | Lg Electronics Inc. | Controlling uplink transmission power using offset value based on antenna number or diversity scheme |
| JP5741382B2 (ja) * | 2011-09-30 | 2015-07-01 | 東京エレクトロン株式会社 | 薄膜の形成方法及び成膜装置 |
| JP5780981B2 (ja) | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | ゲルマニウム薄膜の成膜方法 |
| US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| US9373501B2 (en) | 2013-04-16 | 2016-06-21 | International Business Machines Corporation | Hydroxyl group termination for nucleation of a dielectric metallic oxide |
| US20150275355A1 (en) | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
| US20200071819A1 (en) | 2018-08-29 | 2020-03-05 | Versum Materials Us, Llc | Methods For Making Silicon Containing Films That Have High Carbon Content |
| KR102053871B1 (ko) | 2019-03-14 | 2019-12-09 | 에스케이이노베이션 주식회사 | 휘발성이 향상된 고 점도 지수의 광유계 윤활기유 및 이의 제조 방법 |
| CN116113725B (zh) | 2020-07-24 | 2025-10-31 | 弗萨姆材料美国有限责任公司 | 用于锗种子层的组合物及其使用方法 |
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| TW200424243A (en) * | 2003-04-05 | 2004-11-16 | Rohm & Haas Elect Mat | Organometallic compounds |
| TW201224193A (en) * | 2010-12-09 | 2012-06-16 | Air Prod & Chem | Aminovinylsilane for CVD and ALD SiO2 films |
| TW201910358A (zh) * | 2017-07-27 | 2019-03-16 | 瑞士商盛禧奧歐洲有限責任公司 | 橡膠之製造中特定胺基矽基單體之用途 |
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| TW202219051A (zh) | 2022-05-16 |
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| US12584212B2 (en) | 2026-03-24 |
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