KR20230046303A - 조성물 및 게르마늄 시드층을 위한 이의 사용 방법 - Google Patents

조성물 및 게르마늄 시드층을 위한 이의 사용 방법 Download PDF

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KR20230046303A
KR20230046303A KR1020237006600A KR20237006600A KR20230046303A KR 20230046303 A KR20230046303 A KR 20230046303A KR 1020237006600 A KR1020237006600 A KR 1020237006600A KR 20237006600 A KR20237006600 A KR 20237006600A KR 20230046303 A KR20230046303 A KR 20230046303A
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bis
group
butylamino
propylamino
vinylsilane
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Korean (ko)
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매튜 알 맥도날드
만차오 샤오
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버슘머트리얼즈 유에스, 엘엘씨
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
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    • C07F7/1872—Preparation; Treatments not provided for in C07F7/20
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    • C07F7/1804—Compounds having Si-O-C linkages
    • C07F7/1872—Preparation; Treatments not provided for in C07F7/20
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
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