JP2023542236A5 - - Google Patents
Info
- Publication number
- JP2023542236A5 JP2023542236A5 JP2023519394A JP2023519394A JP2023542236A5 JP 2023542236 A5 JP2023542236 A5 JP 2023542236A5 JP 2023519394 A JP2023519394 A JP 2023519394A JP 2023519394 A JP2023519394 A JP 2023519394A JP 2023542236 A5 JP2023542236 A5 JP 2023542236A5
- Authority
- JP
- Japan
- Prior art keywords
- bis
- butylamino
- propylamino
- allylsilane
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063056341P | 2020-07-24 | 2020-07-24 | |
| US63/056,341 | 2020-07-24 | ||
| PCT/US2021/042946 WO2022020705A1 (en) | 2020-07-24 | 2021-07-23 | Compositions and methods using same for germanium seed layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023542236A JP2023542236A (ja) | 2023-10-05 |
| JP2023542236A5 true JP2023542236A5 (https=) | 2024-07-24 |
Family
ID=79728980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023519394A Pending JP2023542236A (ja) | 2020-07-24 | 2021-07-23 | ゲルマニウムシード層のための組成物およびそれを使用する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12584212B2 (https=) |
| EP (1) | EP4176100A4 (https=) |
| JP (1) | JP2023542236A (https=) |
| KR (1) | KR20230046303A (https=) |
| CN (2) | CN116113725B (https=) |
| TW (1) | TWI798765B (https=) |
| WO (1) | WO2022020705A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116113725B (zh) | 2020-07-24 | 2025-10-31 | 弗萨姆材料美国有限责任公司 | 用于锗种子层的组合物及其使用方法 |
| KR20250127058A (ko) * | 2022-12-22 | 2025-08-26 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 프로그램 및 기판 처리 장치 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020127883A1 (en) | 2001-01-09 | 2002-09-12 | Conti Richard A. | Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides |
| US6570032B1 (en) * | 2001-09-28 | 2003-05-27 | National Starch And Chemical Investment Holding Corporation | Compounds containing vinyl silane and electron donor or acceptor functionality |
| JP4954448B2 (ja) * | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 有機金属化合物 |
| KR101275799B1 (ko) | 2006-11-21 | 2013-06-18 | 삼성전자주식회사 | 저온 증착이 가능한 게르마늄 전구체를 이용한 상변화층형성방법 및 이 방법을 이용한 상변화 메모리 소자의 제조방법 |
| JP2010536170A (ja) | 2007-08-08 | 2010-11-25 | エージェンシー フォー サイエンス，テクノロジー アンド リサーチ | 半導体構造および製造方法 |
| US20090162973A1 (en) | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
| US8580993B2 (en) * | 2008-11-12 | 2013-11-12 | Air Products And Chemicals, Inc. | Amino vinylsilane precursors for stressed SiN films |
| US8889235B2 (en) | 2009-05-13 | 2014-11-18 | Air Products And Chemicals, Inc. | Dielectric barrier deposition using nitrogen containing precursor |
| US9305779B2 (en) | 2009-08-11 | 2016-04-05 | Bae Systems Information And Electronic Systems Integration Inc. | Method for growing germanium epitaxial films |
| EP2470574B1 (en) * | 2009-08-24 | 2014-09-17 | Bridgestone Corporation | Process and catalyst system for polydiene production |
| US9037183B2 (en) | 2010-02-19 | 2015-05-19 | Lg Electronics Inc. | Controlling uplink transmission power using offset value based on antenna number or diversity scheme |
| US8460753B2 (en) | 2010-12-09 | 2013-06-11 | Air Products And Chemicals, Inc. | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes |
| JP5741382B2 (ja) * | 2011-09-30 | 2015-07-01 | 東京エレクトロン株式会社 | 薄膜の形成方法及び成膜装置 |
| JP5780981B2 (ja) | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | ゲルマニウム薄膜の成膜方法 |
| US9460912B2 (en) | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| US9373501B2 (en) | 2013-04-16 | 2016-06-21 | International Business Machines Corporation | Hydroxyl group termination for nucleation of a dielectric metallic oxide |
| US20150275355A1 (en) | 2014-03-26 | 2015-10-01 | Air Products And Chemicals, Inc. | Compositions and methods for the deposition of silicon oxide films |
| EP3434699B1 (en) | 2017-07-27 | 2020-01-01 | Trinseo Europe GmbH | Use of specific aminosilyl monomers in the manufacture of rubber |
| US20200071819A1 (en) | 2018-08-29 | 2020-03-05 | Versum Materials Us, Llc | Methods For Making Silicon Containing Films That Have High Carbon Content |
| KR102053871B1 (ko) | 2019-03-14 | 2019-12-09 | 에스케이이노베이션 주식회사 | 휘발성이 향상된 고 점도 지수의 광유계 윤활기유 및 이의 제조 방법 |
| CN116113725B (zh) | 2020-07-24 | 2025-10-31 | 弗萨姆材料美国有限责任公司 | 用于锗种子层的组合物及其使用方法 |
-
2021
- 2021-07-23 CN CN202180062806.1A patent/CN116113725B/zh active Active
- 2021-07-23 CN CN202511467232.2A patent/CN121344557A/zh active Pending
- 2021-07-23 US US18/006,856 patent/US12584212B2/en active Active
- 2021-07-23 EP EP21846582.1A patent/EP4176100A4/en active Pending
- 2021-07-23 TW TW110127119A patent/TWI798765B/zh active
- 2021-07-23 KR KR1020237006600A patent/KR20230046303A/ko active Pending
- 2021-07-23 JP JP2023519394A patent/JP2023542236A/ja active Pending
- 2021-07-23 WO PCT/US2021/042946 patent/WO2022020705A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102067473B1 (ko) | 유기아미노디실란 전구체 및 이를 포함하는 막을 증착시키는 방법 | |
| EP2860182B1 (en) | Organoaminosilane precursors and methods for depositing films comprising same | |
| JP6864086B2 (ja) | 酸化ケイ素膜の堆積のための組成物及び方法 | |
| EP2818474B1 (en) | Aza-polysilane precursors and methods for depositing films comprising same | |
| US20240395541A1 (en) | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films | |
| JP7554755B2 (ja) | ケイ素含有膜のための組成物及びその組成物を使用する方法 | |
| US12057310B2 (en) | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films | |
| EP2574611A1 (en) | Halogenated Organoaminosilane Precursors and Methods for Depositing Films Comprising Same | |
| US12584212B2 (en) | Compositions and methods using same for germanium seed layer | |
| JP2023542236A5 (https=) | ||
| TWI852311B (zh) | 作為沉積含矽膜的前驅物的鹵化物官能化環三矽氮烷 |