TWI797170B - 化合物、圖案形成用基板、光分解性偶合劑、圖案形成方法及電晶體之製造方法 - Google Patents
化合物、圖案形成用基板、光分解性偶合劑、圖案形成方法及電晶體之製造方法 Download PDFInfo
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- TWI797170B TWI797170B TW107135503A TW107135503A TWI797170B TW I797170 B TWI797170 B TW I797170B TW 107135503 A TW107135503 A TW 107135503A TW 107135503 A TW107135503 A TW 107135503A TW I797170 B TWI797170 B TW I797170B
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Abstract
本發明係一種化合物，其係由下述通式(1)所表示。[式中，X表示鹵素原子或烷氧基，R1為選自碳數1~5之烷基、下述式(R2-1)所表示之基、下述式(R2-2)所表示之基之任一種基，R2為下述式(R2-1)或(R2-2)所表示之基，n0為0以上之整數，n1為0~5之整數，n2為1~5之自然數]
Description
本發明係關於一種化合物、圖案形成用基板、光分解性偶合劑、圖案形成方法及電晶體之製造方法。
本案基於2017年10月11日於日本提出申請之日本特願2017-197501號及2018年3月13日於日本提出申請之日本特願2018-045274號主張優先權，將其內容援用於此。
近年來，於半導體元件、積體電路、有機EL顯示器用器件等微細器件等之製造中，提出於基板上形成表面特性不同之圖案，利用其表面特性之差異製成微細器件之方法。
作為利用基板上之表面特性之差異之圖案形成方法，例如有於基板上形成親水區域與撥水區域，將功能性材料之水溶液塗佈於親水區域之方法。該方法由於功能性材料之水溶液僅於親水區域潤濕擴散，故可形成功能性材料之薄膜圖案。
作為可於基板上形成親水區域與撥水區域之材料，例如專利文獻1中記載有一種可於光照射之前後使接觸角變化之含氟化合物。然而，就環境殘留性之觀點而言，較理想為不含氟之材料。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利第4997765號公報
本發明之第1態樣為一種化合物，其係由下述通式(1)所表示。
[式中，X表示鹵素原子或烷氧基，R1為選自碳數1~5之烷基、下述式(R2-1)所表示之基、下述式(R2-2)所表示之基之任一種基，R2為下述式(R2-1)或(R2-2)所表示之基，n0為0以上之整數，n1為0~5之整數，n2為1~5之自然數]
[式中，R21、R22分別獨立地為碳數1~5之烷基，n為自然數；波浪線係指鍵結鍵]
本發明之第2態樣為一種圖案形成用基板，其具有經上述本發明之第1態樣之化合物化學修飾之表面。
本發明之第3態樣為一種光分解性偶合劑，其係由上述本發明之第1態樣之化合物所構成。
本發明之第4態樣係一種圖案形成方法，其係於對象物之被處理面形成圖 案者，且具備如下步驟：使用上述本發明之第1態樣之化合物，對上述被處理面進行化學修飾；向經化學修飾之上述被處理面照射特定圖案之光，生成由親水區域及撥水區域所構成之潛像；以及於上述親水區域或撥水區域配置圖案形成材料。
本發明之第5態樣係一種圖案形成方法，其係於對象物之被處理面形成圖案者，且具備如下步驟：使用上述本發明之第1態樣之化合物，對上述被處理面進行化學修飾；向經化學修飾之上述被處理面照射特定圖案之光，生成由親水區域及撥水區域所構成之潛像；以及於上述親水區域配置無電解鍍覆用觸媒，進行無電解鍍覆。
本發明之第6態樣係一種電晶體之製造方法，其係具有閘極電極、源極電極、及汲極電極之電晶體之製造方法，且該方法包括如下步驟：藉由上述第4態樣或上述第5態樣之圖案形成方法形成上述閘極電極、上述源極電極、及上述汲極電極中之至少1種電極。
2‧‧‧基板供給部
3‧‧‧基板處理部
4‧‧‧基板回收部
6‧‧‧化合物塗佈部
7‧‧‧曝光部
8‧‧‧遮罩
9‧‧‧圖案材料塗佈部
100‧‧‧基板處理裝置
CONT‧‧‧控制部
S‧‧‧基板
Sa‧‧‧被處理面
圖1係表示基板處理裝置之整體構成之模式圖。
圖2係表示圖案形成方法之概略步驟之圖。
圖3係表示電晶體之製造方法之概略步驟之一例之圖。
圖4係表示光照射前後之XPS光譜之結果之圖。
圖5係表示光照射前後之XPS光譜之結果之圖。
圖6係表示光照射前後之XPS光譜之結果之圖。
圖7係表示光照射前後之XPS光譜之結果之圖。
圖8係表示光照射前後之XPS光譜之結果之圖。
<化合物>
本發明之第1實施形態為一種下述通式(1)所表示之化合物。本實施形態之化合物具有矽氧烷系之撥水基。若使用本實施形態之化合物對基板等對象物表面進行修飾，則可將對象物表面改質為撥水性。又，若修飾後進行光照射，則撥水性基脫離，生成親水基，可將對象物表面改質為親水性。
認為本實施形態之化合物能夠代替習知用以改質為撥水性之氟系之化合物，進而可發揮矽氧烷系之撥水基所特有之撥液性與離型性。
[式中，X表示鹵素原子或烷氧基，R1為選自碳數1~5之烷基、下述式(R2-1)所表示之基、下述式(R2-2)所表示之基之任一種基，R2為下述式(R2-1)或(R2-2)所表示之基，n0為0以上之整數，n1為0~5之整數，n2為1~5之自然數]
[式中，R21、R22分別獨立地為碳數1~5之烷基，n為1~5之自然數；波浪線係指鍵結鍵]
{X}
X為鹵素原子或烷氧基。X所表示之鹵素原子可列舉氟原子、氯原子、溴 原子或碘原子等，但相較於X為鹵素原子，較佳為烷氧基。n0表示0以上之整數，就起始原料之入手之容易度之觀點而言，較佳為1~20之整數，更佳為2~15之整數。
{R1}
通式(1)中，R1為碳數1~5之烷基、下述式(R2-1)或(R2-2)所表示之基。
作為R1之碳數1~5之烷基，可列舉甲基、乙基、丙基、異丙基、正丁基、異丁基、第三丁基、戊基、異戊基、新戊基，較佳為甲基或乙基，更佳為甲基。
{n1、n2}
通式(1)中，n1為0~5之整數，於下述2取代型之情形時，n1較佳為1~5之自然數，更佳為2~4，特佳為3。於1取代型之情形時較佳為0。n2為1~5之自然數，較佳為2~4，更佳為3。
{式(R2-1)或(R2-2)所表示之基}
通式(1)中，作為R1、R2所表示之基，可列舉下述式(R2-1)或(R2-2)所表示之基。
[式中，R21、R22分別獨立地為碳數1~5之烷基，n為自然數；波浪線係指鍵結鍵]
式(R2-1)或(R2-2)中，R21、R22分別獨立為碳數1~5之烷基。作為碳數1~5之烷基，可列舉上述R1中所記載之基，其中較佳為甲基、異丙基、或第三丁基。式(R2-2)中之n為自然數，較佳為1~200，較佳為1~150，更佳為1~120。
以下，有時將具有式(R2-1)所表示之基作為R1、R2所表示之基之情形記載為「分支型」，將具有式(R2-2)所表示之基作為R1、R2所表示之基之情形記載為「直鏈型」進行說明。又，有時將R1為烷基之情形記載為「1取代型」，將R1為式(R2-1)或(R2-2)所表示之基之情形記載為「2取代型」進行說明。
藉由對導入至R1、R2之基進行調整，本實施形態之通式(1)所表示之化合物包含1取代分支型、1取代鏈狀型、2取代分支型、2取代鏈狀型之化合物。
以下記載有通式(1)所表示之化合物之具體例。
《化合物之製造方法》
本實施形態之通式(1)所表示之化合物可藉由下述方法進行製造。
於以下之製造方法之說明中，關於R1、R21、R22之說明與上述相同。
[製造方法1]
藉由使矽氧烷化合物與下述式所表示之中間化合物14反應，可獲得中間化合物14'。中間化合物14可藉由下述實施例中記載之方法進行製造，例如可藉由H.Nakayama etal.,Colloids Surf.B,2010,76,88-97中記載之方法進行合成。
[式中，R1、R21分別獨立地為碳數1~5之烷基]
進一步使矽氧烷化合物與獲得之中間化合物14'反應，藉此可獲得本實施形態之化合物(1)。
[式中，R1、R21分別獨立地為碳數1~5之烷基；X表示鹵素原子或烷氧基，n0為0以上之整數]
[製造方法2]
1取代直鏈型之通式(1)所表示之化合物可藉由下述方法進行製造。具體而言，使矽氧烷化合物與下述式所表示之中間化合物13反應，獲得中間化合物15。
[式中，R1、R22分別獨立地為碳數1~5之烷基]
使丁二醯亞胺基碳酸酯與獲得之中間化合物15反應，可獲得中間化合物15'。
[式中，R1、R22分別獨立地為碳數1~5之烷基]
進一步使矽氧烷化合物與獲得之中間化合物15'反應，藉此可獲 得本實施形態之化合物(1)。
[式中，R1、R21分別獨立地為碳數1~5之烷基；X表示鹵素原子或烷氧基，n0為0以上之整數]
[製造方法3]
2取代型之通式(1)所表示之化合物可藉由下述方法進行製造。
具體而言，使各矽氧烷化合物與下述式所表示之中間化合物25分別進行反應，可獲得中間化合物25'。
[式中，R21為碳數1~5之烷基]
[式中，R1為碳數1~5之烷基]
進一步使矽氧烷化合物與獲得之中間化合物25'反應，藉此可獲得本實施形態之化合物(1)。
[式中，R1為碳數1~5之烷基；X表示鹵素原子或烷氧基，n0為0以上之整數]
[式中，R1為碳數1~5之烷基；X表示鹵素原子或烷氧基，n0為0以上之整數]
<圖案形成用基板>
本發明之第2實施形態為一種具有使用第1實施形態之化合物而經化學修飾之表面之圖案形成用基板。
本實施形態之圖案形成用基板之表面使用第1實施形態之化合物而經修飾。因此，藉由隔著遮罩等選擇性地進行曝光，而於圖案形成用基板上於曝光部形成親水性區域，於未曝光部形成撥水性區域。
藉由於形成有親水性區域與撥水性區域之基板上塗佈圖案形成材料，可在形成於曝光部之親水性區域選擇性地塗佈圖案形成材料，可形成金屬配線等。
作為基材，並無特別限定，可較佳地列舉玻璃、石英玻璃、矽晶圓、塑膠板、金屬板等。又，亦可使用於該等基板上形成有金屬薄膜之基板。
作為基材之形狀，並無特別限定，較佳為平面、曲面、或具有部分曲面之平面，更佳為平面。又，基材之面積亦無特別限定，可採用具有儘可能應用習知之塗佈方法之大小之面之基材。又，使用第1實施形態之化合物而經化學修飾之表面較佳為形成於平面上之基材之一面。
修飾基板之表面時，較佳為預先對基板表面進行處理。作為預處理方法，較佳為利用食人魚溶液之預處理、或利用UV-臭氧清潔器之預處理。
<光分解性偶合劑>
本發明之第3實施形態為一種由第1實施形態之化合物所構成之光分解性偶合劑。
本實施形態之光分解性偶合劑具備：光分解性基，其具備撥液基；及附著基，其經由官能基連結於該光分解性基；撥液基係具有矽氧烷結構者，又，官能基係於光分解後使胺基成為殘基者。因此，本實施形態之光分解性偶合劑可較大地確保光照射前後之接觸角之差。
<圖案形成方法>
本發明之第4實施形態為一種於對象物之被處理面形成圖案之圖案形成方法，其具備如下步驟：使用第1實施形態之化合物對上述被處理面進行化學修飾；向經化學修飾之上述被處理面照射特定圖案之光，生成由親水區域及撥水區域所構成之潛像；以及於上述親水區域或撥水區域配置圖案形成材料。
[化學修飾步驟]
於對象物之被處理面形成圖案之圖案形成方法中，本步驟係使用第1實施形態之化合物，對上述被處理面進行化學修飾者。
作為對象物，並無特別限定，例如可列舉金屬、結晶質材料(例如單晶質、多晶質及部分結晶質材料)、非晶質材料、導體、半導體、絕 緣體、光學元件、塗裝基板、纖維、玻璃、陶瓷、沸石、塑膠、熱硬化性及熱塑性材料(例如視情形經摻雜之聚丙烯酸酯、聚碳酸酯、聚胺酯、聚苯乙烯、纖維素聚合物、聚烯烴、聚醯胺、聚醯亞胺、樹脂、聚酯、聚伸苯等)、膜、薄膜、箔。
於本實施形態之圖案形成方法中，較佳為於可撓性基板上形成電子器件用之電路圖案。
於本實施形態中，作為成為對象物之可撓性基板，例如可使用樹脂膜或不鏽鋼等之箔(foil)。例如，樹脂膜可使用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、伸乙基-乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂等材料。
此處可撓性係指即便對基板施加自重程度之力，亦能夠不會剪斷或破斷地使該基板撓曲之性質。又，藉由自重程度之力而彎曲之性質亦包含於可撓性。又，上述可撓性根據該基板之材質、大小、厚度、或溫度等環境等變化。再者，作為基板，可使用1片帶狀之基板，亦可設為連接多個單位基板而形成為帶狀之構成。
於本步驟中，較佳為使用第1實施形態之化合物對對象物之被處理面之整個表面、或特定之區域內進行化學修飾。
作為對對象物之被處理面進行化學修飾之方法，只要為使上述通式(1)中之X所表示之基與基板鍵結之方法，則無特別限定，可使用浸漬法、化學處理法等眾所周知之方法。
表示本步驟中之化學修飾之一例。
本步驟中之化學修飾例如可如下所示藉由使上述通式(1)所表示之化合物與基板反應而進行。
[式中，X表示鹵素原子或烷氧基，R1為碳數1~5之烷基、上述式(R2-1)或(R2-2)所表示之基，R2為上述式(R2-1)或(R2-2)所表示之基；n0為自然數；n1為0~5之整數，n2為1~5之自然數]
[潛像生成步驟]
本步驟係使經化學修飾之被處理面曝光，生成由親水區域及撥水區域所構成之潛像者。
曝光時照射之光較佳為紫外線。照射之光較佳為包括具有包含於200nm~450nm之範圍之波長之光，更佳為包括具有包含於320nm~450nm之範圍之波長之光。又，亦較佳為照射包含波長為365nm之光之光。具有該等波長之光可使光分解性基高效分解。作為光源，可列舉低壓水銀燈、高壓水銀燈、超高壓水銀燈、氙氣燈、鈉燈；氮氣等氣體雷射、有機色素溶液之液體雷射、使無機單晶含有稀土類離子所得之固體雷射等。
又，作為能夠獲得單色光之雷射以外之光源，亦可使用特定波長之光，該特定波長之光係使用帶通濾波器、截止濾光片等光學濾光片提取出寬頻帶之線光譜、連續光譜所得者。就可一次照射較大之面積而言，作為光源，較佳為高壓水銀燈或超高壓水銀燈。
於本實施形態之圖案形成方法中，於上述範圍可任意地照射光，但特佳為照射對應於電路圖案之分佈之光能。
於本步驟中，由於藉由向經化學修飾之被處理面照射特定圖案之光，具有撥水性能之基解離，生成具有親水性能之殘基(胺基)，故於光照射後，可生成由親水區域及撥水區域所構成之潛像。
於本步驟中，較佳為於可撓性基板之表面生成利用親撥水之差 異之電路圖案之潛像。
藉由向下述經化學修飾之被處理面照射特定圖案之光，而如下所示使具有撥水性能之基解離，生成具有親水性能之殘基(胺基)。
[式中，R1為碳數1~5之烷基、上述式(R2-1)或(R2-2)所表示之基，R2為上述式(R2-1)或(R2-2)所表示之基；n0為自然數；n1為0~5之整數，n2為1~5之自然數]
[配置圖案形成材料之步驟]
本步驟係於藉由上述步驟生成之親水區域或撥水區域配置圖案形成材料者。
作為圖案形成材料，可列舉使金、銀、銅或該等之合金等之粒子分散於特定之溶劑而成之配線材料(金屬溶液)、或包含上述金屬之前驅物溶液、使絕緣體(樹脂)、半導體、有機EL發光材等分散於特定之溶劑所得之電子材料、抗蝕劑液等。
於本實施形態之圖案形成方法中，圖案形成材料較佳為導電材料、半導體材料、或絕緣材料。
作為導電材料，可列舉由使導電性微粒子分散於分散介質而成之分散液所構成之圖案形成材料。作為導電性微粒子，例如除了含有金、銀、銅、鈀、鎳及ITO中之任一種之金屬微粒子以外，可使用該等之氧化物、及導電性聚合物或超電導體之微粒子等。
該等導電性微粒子為了提高分散性，亦可於表面塗佈有機物等後使用。
作為分散介質，只要係可使上述導電性微粒子分散，且不引起 凝集者，則無特別限定。例如，除了水以外，可例示甲醇、乙醇、丙醇、丁醇等醇類，正庚烷、正辛烷、癸烷、十二烷、十四烷、甲苯、二甲苯、異丙基甲苯、均四甲苯、茚、雙戊烯、四氫化萘、十氫化萘、環己基苯等烴系化合物，以及乙二醇二甲醚、乙二醇二乙醚、乙二醇甲基乙基醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇甲基乙基醚、1,2-二甲氧基乙烷、雙(2-甲氧基乙基)醚、對二
烷等醚系化合物，進而碳酸丙二酯、γ-丁內酯、N-甲基-2-吡咯啶酮、二甲基甲醯胺、二甲基亞碸、環己酮等極性化合物。該等之中，就微粒子之分散性與分散液之穩定性、以及對液滴噴出法(噴墨法)之應用容易性之方面而言，較佳為水、醇類、烴系化合物、醚系化合物，作為更佳之分散介質，可列舉水、烴系化合物。
作為半導體材料，可使用由分散或溶解於分散介質而成之分散液所構成之有機半導體材料。作為有機半導體材料，較理想為其骨架為由共軛雙鍵所構成之π電子共軛系之低分子材料或高分子材料。代表性地可列舉稠五苯等并苯類、苯并噻吩并苯并噻吩等噻吩并苯(thienoacene)類等可溶性之低分子材料，聚噻吩、聚(3-烷基噻吩)、聚噻吩衍生物等可溶性之高分子材料。又，亦可使用藉由熱處理而變為上述半導體之可溶性前驅物材料，例如作為稠五苯前驅物，可列舉亞磺醯基乙醯胺稠五苯等。再者，不限於有機半導體材料，亦可使用無機半導體材料。
作為絕緣材料，可列舉使聚醯亞胺、聚醯胺、聚酯、丙烯酸、PSG(磷玻璃)、BPSG(磷硼玻璃)、聚矽氮烷系SOG、或矽酸鹽系SOG(Spin on Glass)、烷氧基矽酸鹽系SOG、以矽氧烷聚合物為代表之具有Si-CH3鍵之SiO2等分散或溶解於分散介質而成之分散液所構成之絕緣材料。
於本步驟中，作為配置圖案形成材料之方法，可適用液滴吐出法、噴墨法、旋轉塗佈法、輥塗法、狹縫塗佈法、浸漬塗佈法等。
以下，參照圖式，對本實施形態之圖案形成方法進行說明。
於本實施形態之圖案形成方法中，使用對應於所謂卷對卷製程之可撓性基板之情形時，可使用如圖1所示之作為卷對卷裝置之基板處理裝置100形成圖案。圖1表示基板處理裝置100之構成。
如圖1所示，基板處理裝置100具有：供給帶狀基板(例如帶狀之膜構件)S之基板供給部2、對基板S之表面(被處理面)Sa進行處理之基板處理部3、回收基板S之基板回收部4、第1實施形態之化合物之塗佈部6、曝光部7、遮罩8、圖案材料塗佈部9、以及對該等各部進行控制之控制部CONT。基板處理部3可於自基板供給部2送出基板S至基板S被基板回收部4回收之間對基板S之表面執行各種處理。
該基板處理裝置100可良好地用於在基板S上形成例如有機EL元件、液晶顯示元件等顯示元件(電子器件)之情形。
再者，圖1係圖示為了產生所需之圖案光而使用光罩之方式者，但本實施形態亦可良好地應用於不使用光罩之無遮罩曝光方式。作為不使用光罩而產生圖案光之無遮罩曝光方式，可列舉使用DMD等空間光調變元件之方法、如雷射印表機般掃描光點之方式等。
於本實施形態之圖案形成方法中，如圖1所示設定XYZ座標系，以下適當地使用該XYZ座標系進行說明。XYZ座標系例如沿著水平面設定X軸及Y軸，沿著鉛直方向向上設定Z軸。又，基板處理裝置100整體沿著X軸，自其負側(-側)向正側(+側)搬送基板S。此時，帶狀基板S之寬度方向(短條方向)設定為Y軸方向。
作為基板處理裝置100中成為處理對象之基板S，例如可使用樹脂膜或不鏽鋼等之箔(foil)。例如樹脂膜可使用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、伸乙基-乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、 聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂等材料。
基板S較佳為熱膨脹係數小如即便受到例如200℃左右之熱而亦不改變尺寸者。例如，可將無機填料混合至樹脂膜而縮小熱膨脹係數。作為無機填料之例，可列舉氧化鈦、氧化鋅、氧化鋁、氧化矽等。又，基板S亦可為藉由浮式法等製造之厚度100μm左右之極薄玻璃之單獨體、或於該極薄玻璃貼合上述樹脂膜或鋁箔而成之積層體。
基板S之寬度方向(短條方向)之尺寸例如形成為1m~2m左右，長度方向(長條方向)之尺寸例如形成為10m以上。當然，該尺寸只不過為一例，並不限定於此。例如基板S之Y方向之尺寸亦可為50cm以下，亦可為2m以上。又，基板S之X方向之尺寸亦可為10m以下。
基板S較佳為以具有可撓性之方式形成。此處，可撓性係指即便向基板施加自重程度之力，亦能夠不會剪斷或破斷地使該基板撓曲之性質。又，藉由自重程度之力彎曲之性質亦包含於可撓性。
又，上述可撓性根據該基板之材質、大小、厚度、或溫度等環境等而變化。再者，作為基板S，可使用1片帶狀基板，亦可設為連接多個單位基板而形成為帶狀之構成。
基板供給部2例如係將捲成捲筒狀之基板S送出至基板處理部3而進行供給。該情形時，基板供給部2中設置有捲繞基板S之軸部或使該軸部旋轉之旋轉驅動裝置等。另外，例如亦可為設置有覆蓋捲成捲筒狀之狀態之基板S之覆蓋部等之構成。再者，基板供給部2不限定於將捲成捲筒狀之基板S送出之機構，只要包含將帶狀之基板S於其長度方向依序送出之機構(例如夾持式之驅動滾輪等)即可。
基板回收部4將通過基板處理裝置100之基板S捲繞成例如捲筒狀進行回收。基板回收部4中與基板供給部2同樣地設置有用以捲繞基板S之軸部 或使該軸部旋轉之旋轉驅動源、及覆蓋回收之基板S之覆蓋部等。再者，於基板處理部3中，於基板S被切割成面板狀之情形等時，亦可為例如將基板S回收成重疊之狀態等而以與捲成捲筒狀之狀態不同之狀態回收基板S之構成。
基板處理部3將自基板供給部2供給之基板S搬送至基板回收部4，並且於搬送之過程中進行使用第1實施形態之化合物對基板S之被處理面Sa進行化學修飾之步驟、向經化學修飾之被處理面照射特定圖案之光之步驟、及配置圖案形成材料之步驟。基板處理部3具有：對基板S之被處理面Sa塗佈第1實施形態之化合物之化合物塗佈部6、照射光之曝光部7、遮罩8、圖案材料塗佈部9、以及於對應於加工處理之形態之條件下運送基板S之包含驅動滾輪R等之搬送裝置20。
化合物塗佈部6與圖案材料塗佈部9可列舉液滴塗佈裝置(例如液滴吐出型塗佈裝置、噴墨型塗佈裝置、旋轉塗佈型塗佈裝置、輥塗型塗佈裝置、狹縫塗佈型塗佈裝置等)。
該等各裝置沿著基板S之搬送路徑適當地設置，可撓性顯示器之面板等能夠藉由所謂卷對卷方式進行生產。本實施形態中，採用設置有曝光部7者，負責其前後步驟(感光層形成步驟、感光層顯影步驟等)之裝置亦視需要線內化而設置。
<利用無電解鍍覆之配線圖案形成方法>
本發明之第5實施形態為一種於對象物之被處理面形成圖案之圖案形成方法，其具備如下步驟：使用第1實施形態之化合物，對上述被處理面進行化學修飾；向經化學修飾之上述被處理面照射特定圖案之光，生成由親水區域及撥水區域所構成之潛像；以及於上述親水區域配置無電解鍍覆用觸媒，進行無電解鍍覆。
根據本實施形態，例如可藉由如下之方法形成利用無電解鍍覆之配線圖 案。以下，使用圖2進行說明。
(第1步驟)
首先，如圖2(a)所示，塗佈第1實施形態之化合物而形成化合物層12。
作為塗佈方法，可使用物理氣相沈積法(PVD)或化學氣相沈積法(CVD)、液相生長法等一般之成膜技術之任一種。其中，特佳為液相生長法，作為液相生長法，例如可列舉塗佈法(旋轉塗佈、浸漬塗佈、模嘴塗佈、噴塗、輥塗、刷塗)、印刷法(軟版印刷、網版印刷)等。又，亦可製成SAM膜、LB膜。
再者，於本步驟中，例如亦可實施藉由熱或減壓等使溶劑乾燥之處理。
(第2步驟)
其次，如圖2(b)所示，準備具有特定圖案之曝光區域之光罩13。作為曝光方法，不限定於使用光罩之手段，可利用使用透鏡或鏡面等光學系統之投影曝光、使用空間光調變元件、雷射光束等之無遮罩曝光等手段。再者，光罩13可以與化合物層12接觸之方式設置，亦可以成為非接觸之方式設置。
(第3步驟)
其後，如圖2(c)所示，隔著光罩13向化合物層12照射UV光。藉此，於光罩13之曝光區域中，化合物層12被曝光，形成親水區域14。
再者，UV光可根據感光性基之結構照射發揮最適合之量子效率之波長。例如可列舉365nm之i射線。又，該曝光量或曝光時間未必需要完全進行去保護，產生一部分之胺基之程度即可。彼時，於下述鍍覆步驟中，可適當變更與去保護之進行情形相適應之條件(鍍浴之活性等)。
(第4步驟)
其次，如圖2(d)所示，於表面賦予無電解鍍覆用觸媒，形成觸媒層15。 無電解鍍覆用觸媒係使包含於無電解鍍覆用之鍍覆液之金屬離子還原之觸媒，可列舉銀或鈀。
胺基露出於親水區域14之表面，胺基能夠捕捉、還原上述無電解鍍覆用觸媒。因此，僅於親水區域14上捕捉無電解鍍覆用觸媒，形成觸媒層15。又，無電解鍍覆用觸媒可使用能夠載持胺基者。
(第5步驟)
如圖2(e)所示，進行無電解鍍覆處理，形成鍍覆層16。再者，作為鍍覆層16之材料，可列舉鎳-磷(NiP)或銅(Cu)。
本步驟中，將基板11浸漬於無電解鍍浴而使金屬離子還原至觸媒表面，析出鍍覆層16。此時，因為於親水區域14表面形成有載持充分量之觸媒之觸媒層15，故而可僅於親水區域14上選擇性地析出鍍覆層16。於還原不充分之情形時，亦可浸漬於次磷酸鈉、硼氫化鈉等還原劑溶液而積極地還原胺上之金屬離子。
藉由以上步驟，能夠使用第1實施形態之化合物於特定之基板上形成配線圖案。
<電晶體之製造方法>
進而關於將第5步驟中獲得之鍍覆層16設為閘極電極之電晶體之製造方法，使用圖3進行說明。
(第6步驟)
如圖3(a)所示，藉由眾所周知之方法覆蓋利用上述無電解鍍覆圖案形成方法而形成之無電解鍍覆圖案之鍍覆層16，於化合物層12上形成絕緣體層17。絕緣體層17例如可藉由使用使紫外線硬化型之丙烯酸樹脂、環氧樹脂、烯-硫醇樹脂、聚矽氧樹脂等1種以上之樹脂溶解於有機溶劑而成之塗佈液，並塗佈該塗佈液而形成。藉由隔著對應於形成絕緣體層17之區域設置有開口部之遮罩向 塗膜照射紫外線，能夠使絕緣體層17形成為所需之圖案。
(第7步驟)
如圖3(b)所示，與上述無電解鍍覆圖案形成方法之第1~第3步驟同樣地於形成有源極電極及汲極電極之部分形成親水區域14。
(第8步驟)
如圖3(c)所示，與上述無電解鍍覆圖案形成方法之第4及第5步驟同樣地於親水區域14上載持無電解鍍覆用觸媒，形成觸媒層15後，進行無電解鍍覆，藉此形成鍍覆層18(源極電極)及鍍覆層19(汲極電極)。再者，作為鍍覆層18及19之材料，亦可列舉鎳-磷(NiP)或銅(Cu)，但亦可藉由與鍍覆層16(閘極電極)不同之材料形成。
(第9步驟)
如圖3(d)所示，於鍍覆層18(源極電極)及鍍覆層19(汲極電極)之間形成半導體層21。半導體層21例如可藉由製作使可溶於TIPS稠五苯(6,13-Bis(triisopropylsilylethynyl)pentacene)之類之有機溶劑之有機半導體材料溶解於該有機溶劑而成之溶液，於鍍覆層18(源極電極)及鍍覆層19(汲極電極)之間塗佈並加以乾燥而形成。再者，於形成半導體層21之前，亦可使鍍覆層18(源極電極)及鍍覆層19(汲極電極)之間之化合物層12曝光而使其親水化。藉由使對應於電晶體之通道之部分親水化，而於該親水化部分良好地塗佈上述溶液，容易選擇性地形成半導體層21。又，半導體層21亦可藉由向上述溶液添加PS(聚苯乙烯)或PMMA(聚甲基丙烯酸甲酯)等絕緣性聚合物1種以上，塗佈包含該絕緣性聚合物之溶液，且使其乾燥而形成。若如此形成半導體層21，則於半導體層21之下方(絕緣體層17側)集中形成絕緣性聚合物。於有機半導體與絕緣體層之界面存在胺基等極性基之情形時，雖有發生電晶體特性降低之傾向，但藉由設為隔著上述絕緣性聚合物設置有機半導體之構成，可抑制 電晶體特性之降低。能夠如以上所述製造電晶體。
根據如上所述之方法，於UV曝光步驟中，無需另外設置化學之抗蝕劑等，可設為僅利用光罩之簡單之步驟。因此，當然亦無需去除抗蝕層之步驟。又，藉由胺基之觸媒還原能力，亦可省略通常必需之觸媒之活化處理步驟，能夠實現大幅度之低成本化與時間縮短，並且實現高精細之圖案化。又，由於可使用浸漬塗佈法，故而即便為卷對卷步驟亦可非常合適地利用。
再者，作為電晶體之結構，並無特別限制，可根據目的進行適當選擇。於圖2~圖3之態樣中，對底端接觸底閘極型電晶體之製造方法進行了說明，但頂部接觸底閘極型、頂部接觸頂閘極型、底端接觸頂閘極型電晶體亦可相同地進行製造。再者，圖2~圖3之態樣中，對使用第1實施形態之化合物形成閘極電極、源極電極、汲極電極全部之方法進行了說明，但可使用第1實施形態之化合物僅形成閘極電極，亦可使用第1實施形態之化合物僅形成源極電極及汲極電極。
以下，藉由實施例更具體地說明本發明，但本發明並不限定於以下之實施例。
<化合物3a之合成>
《步驟1：1-(4-烯丙氧基-3-甲氧基苯基)乙酮之合成》
向300mL圓底燒瓶添加4-羥基-3-甲氧基苯乙酮(5.00g，30.1mmol)使其溶解於丙酮(50mL)，添加碳酸鉀(6.24g，45.1mmol)，於室溫下攪拌5分鐘後，添加烯丙基溴(5.46g，45.1mmol)，於室溫下攪拌24小時。濃縮後，添加乙酸乙酯(50mL×2)與純水(50mL)進行萃取，藉由飽和碳酸鈉水溶液(50mL×3)、飽和鹽水(50mL×2)依序將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮，獲得淡黃色油(中間化合物11；1-(4-allyloxy-3- methoxyphenyl)ethanone)6.09g(29.5mmol，98%)。
將獲得之中間化合物11之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 2.57(3H,s),3.94(3H,s),4.69(2H,dt,J=5.4,1.5Hz),5.33(1H,dq,J=11,1.3Hz),5.43(1H,dq,J=17,1.5Hz),6.09(1H,ddt,J=17,11,5.4Hz),6.89(1H,d,J=9.0Hz),7.52-7.56(2H,m).
《步驟2：1-(4-烯丙氧基-5-甲氧基-2-硝基苯基)乙酮之合成》
向50mL圓底燒瓶添加上述中間化合物11(497mg，2.41mmol)使其溶解於乙酸(3mL)，於冰浴上緩慢地滴加發煙硝酸(1mL，24.1mmol)，於0℃攪拌30分鐘。添加冷水(10mL)，藉由乙酸乙酯(10mL×3)進行萃取，藉由飽和碳酸氫鈉水溶液(10mL)、飽和鹽水(10mL×2)依序將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮。藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯=4：1→2：1)，獲得黃白色固體(中間化合物12；1-(4-allyloxy-5-methoxy-2-nitrophenyl)ethanone)345mg(1.37mmol，57%)。
將獲得之中間化合物12之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 2.50(3H,s),3.98(3H,s),4.71(2H,dt,J=5.5,1.4Hz),5.39(1H,dq,J=11,1.3Hz),5.48(1H,dq,J=17,1.3Hz),6.07(1H,ddt,J=17,11,5.4Hz),6.76(1H,s),7.62(1H,s).
《步驟3：1-(4-烯丙氧基-5-甲氧基-2-硝基苯基)乙醇之合成》
向50mL圓底燒瓶添加上述步驟中獲得之中間化合物12(1.41g，5.61mmol)、四氫呋喃(10mL)、甲醇(10mL)，於冰浴上一點一點地添加硼氫化鈉(637mg，16.8mmol)。於0℃攪拌20分鐘，進而於室溫下攪拌40分鐘。濃縮後，添加氯仿(10mL×3)與純水(30mL)進行萃取，藉由飽和鹽水(20mL×3)將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮，獲得黃白色固體(中間化合物13；1-(4-allyloxy-5-methoxy-2-nitrophenyl)ethanol)1.40g(5.54mmol，99%)。
將獲得之中間化合物13之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 1.56(3H,d,J=6.3Hz),2.29(1H,d,J=3.7Hz),4.00(3H,s),4.67(2H,dt,J=5.5,1.4Hz),5.36(1H,dq,J=11,1.3Hz),5.46(1H,dq,J=17,1.5Hz),5.57(1H,qd,J=6.3,3.7Hz),6.07(1H,ddt,J=17,11,5.4Hz),7.31(1H,s),7.59(1H,s).
《步驟4：N-丁二醯亞胺基碳酸1-(4-烯丙氧基-5-甲氧基-2-硝基苯基)乙酯之合成》
向200mL二口圓底燒瓶添加中間化合物13(2.50g，9.85mmol)使其溶解於乾乙腈(35mL)，添加二(N-丁二醯亞胺基)碳酸酯(6.36g，24.8mmol)、三乙胺(4.05g，40.1mmol)，於氮氣環境下，於室溫下攪拌17小時。濃縮後，添加氯仿(150mL，60mL×2)、純水(200mL)與2N鹽酸(10mL)進行萃取，藉由飽和鹽水(100mL×3)將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮。藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯=2：1)，獲得黃白色固體(中間化合物14；1-(4-allyloxy-5-methoxy-2-nitrophenyl)ethyl N- succinimidyl carbonate)2.97g(7.54mmol，77%)。
將獲得之中間化合物14之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 1.76(3H,d,J=6.4Hz),2.80(4H,s),4.06(3H,s),4.67(2H,dt,J=5.5,1.4Hz),5.37(1H,dq,J=11,1.3Hz),5.47(1H,dq,J=17,1.5Hz),6.07(1H,ddt,J=17,11,5.4Hz),6.51(1H,q,J=6.4Hz),7.08(1H,s),7.65(1H,s).
於本實施例中，藉由上述方法合成中間化合物14，但亦可使用藉由例如H.Nakayama et al.,Colloids Surf.B,2010,76,88-97中記載之方法合成之中間化合物14。
《步驟5：N-丁二醯亞胺基碳酸1-(5-甲氧基-2-硝基-4-(3-三(三甲基矽氧基)矽基丙氧基)苯基)乙酯之合成》
向30mL二口圓底燒瓶添加中間化合物14(300mg，0.761mmol)使其溶解於乾四氫呋喃(6mL)，添加三(三甲基矽氧基)矽烷(677mg，2.28mmol)、卡斯特觸媒(5滴)，於氮氣環境下於室溫下攪拌20小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯：四甲氧基矽烷=60：20：1→50：50：1)，獲得黃色黏體(中間化合物1a；1-(5-methoxy-2-nitro-4-(3-tris(trimethylsiloxy)silylpropoxy)phenyl)ethyl N-succinimidyl carbonate)281mg(0.407mmol，53%)。
將獲得之化合物中間化合物1a之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.10(27H,s),0.55-0.60(2H,m),1.76(3H,d,J=6.5Hz),1.85-1.94(2H,m),2.80(4H,s),3.98-4.03(2H,m),4.04(3H, s),6.51(1H,q,J=6.4Hz),7.07(1H,s),7.62(1H,s).
《步驟6：3-三甲氧基矽基丙基胺基甲酸1-(5-甲氧基-2-硝基-4-(3-三(三甲基矽氧基)矽基丙氧基)苯基)乙酯(1-(5-methoxy-2-nitro-4-(3-tris(trimethylsiloxy)silylpropoxy)phenyl)ethyl 3-trimethoxysilylpropyl carbamate)之合成》
向30mL二口圓底燒瓶添加中間化合物1a(100mg，0.145mmol)使其溶解於乾四氫呋喃(1mL)，添加3-胺基丙基三甲氧基矽烷(3-aminopropyltrimethoxysilane)(0.028mL，0.161mmol)，於氮氣環境下，遮光地於室溫下攪拌22小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯：四甲氧基矽烷=60：20：1)，獲得明黃色黏體48mg(0.0636mmol，44%)。
將獲得之本實施形態之化合物3a之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.10(27H,s),0.54-0.65(4H,m),1.58(3H,d,J=6.5Hz),1.61-1.68(2H,m),1.84-1.93(2H,m),3.10-3.18(2H,m),3.56(9H,s),3.95(3H,s),3.98-4.03(2H,m),4.95(1H,t,J=5.2Hz),6.37(1H,q,J=6.4Hz),6.99(1H,s),7.56(1H,s).
13C NMR(CDCl3/TMS,100MHz)：δ 1.74(9C),6.31,10.3,22.3,23.0,23.2,43.3,50.6(3C),56.3,68.8,71.6,108.0,108.8,133.9,139.6,147.4,153.9,155.3.
<表面修飾>
藉由甲醇對附熱氧化膜之矽晶圓(SiO2/Si基板)進行5分鐘超音波洗淨，於氮氣氣流下進行乾燥後，藉由UV-臭氧清潔器照射1小時UV進行預處理。
其次，將藉由上述方法所獲得之化合物3a溶解於乾甲苯以製備1mM溶液，放入上述預處理之基板，於氮氣環境下，於室溫下浸漬20小時。藉由甲醇對基板進行洗滌，藉由甲醇與氯仿各超音波洗淨5分鐘，於氮氣氣流下進行乾燥(下述步驟1)。
<光照射>
於大氣中向經修飾之基板隔著濾光片藉由超高壓水銀燈照射波長365nm、照度15J之光。藉由氯仿對基板進行5分鐘超音波洗淨，於氮氣氣流下進行乾燥(下述步驟2)。
<接觸角測定>
使用接觸角計(協和界面科學股份有限公司)根據液滴法、θ/2法，分別使用水、二碘甲烷、1-溴基萘對探測液體測定光照射前後之靜態接觸角。將其結果記載於表1。於下述表1中，「光照射前」係指上述步驟1剛結束後，「光照射後」係指上述步驟2剛結束後。
如上述表1中所示之結果，確認不包含氟之化合物3a於光照射後接觸角變小。
<XPS測定>
獲得之修飾基板係藉由靜態接觸角測定及X射線光電子光譜法(X-ray photoelectron spectroscopy，以下稱作「XPS」)將光照射前後進行比較。圖4中表示光照射前後之XPS光譜。
認為由於修飾後接觸角較大，顯示疏水性，故基板上經修飾。
又，依據XPS，由於修飾後能夠見到來自於硝基之波峰之出現，故亦表示經修飾。
確認於光照射後接觸角變小。又，依據XPS，由於在光照射後來自於硝基之波峰消失，且C(碳)波峰減少，故而可確認光分解性基由於光照射而脫離。
<化合物3b之合成>
《步驟1：N-丁二醯亞胺基碳酸1-(4-(3-(1,1,3,3,5,5,5-七甲基三矽氧烷基)丙氧基)-5-甲氧基-2-硝基苯基)乙酯之合成》
向50mL二口圓底燒瓶添加中間化合物14(1.0g，2.53mmol)使其溶解於乾四氫呋喃(21mL)，添加1,1,3,3,5,5,5-七甲基三矽氧烷(1.13g，5.07mmol)、卡斯特觸媒(1.0mL)，於氮氣環境下，遮光地於室溫下攪拌3小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯：四甲氧基矽烷=200：100：3)，獲得黃色黏體0.597g(0.968mmol，38%)。
將獲得之中間化合物1b之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.03(6H,s),0.09(9H,s),0.12(6H,s),0.62-0.69(2H,m),1.76(3H,d,J=6.4Hz),1.86-1.95(2H,m),2.80(4H,s),3.99-4.05(2H,m),4.04(3H,s),6.51(1H,q,J=6.4Hz),7.07(1H,s),7.63(1H,s).
《步驟2：3-三甲氧基矽基丙基胺基甲酸1-(4-(3-(1,1,3,3,5,5,5-七甲基三矽氧烷基)丙氧基)-5-甲氧基-2-硝基苯基)乙酯(1-(4-(3-(1,1,3,3,5,5,5-heptamethyltrisiloxanyl)propoxy)-5-methoxy-2-nitrophenyl)ethyl 3-trimethoxysilylpropyl carbamate)之合成》
向30mL二口圓底燒瓶添加中間化合物1b(200mg，0.324mmol)使其溶解於乾四氫呋喃(2mL)，添加3-胺基丙基三甲氧基矽烷(3-aminopropyltrimethoxysilane)(0.085mL，0.486mmol)、三乙胺(0.113mL，0.81mmol)，於氮氣環境下，遮光地於室溫下攪拌13小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯：四甲氧基矽烷=50：50：1)，獲得明黃色黏體98mg(0.144mmol，45%)。
將獲得之化合物3b之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.03(6H,s),0.09(9H,s),0.11(6H,s),0.58-0.69(4H,m),1.53-1.69(5H,m),1.84-1.94(2H,m),3.06-3.21(2H,m),3.56(9H,s),3.95(3H,s),4.01(2H,t,J=7.2Hz),4.95(1H,t,J=5.8Hz),6.37(1H,q,J=6.4Hz),6.99(1H,s),7.56(1H,s).
<化合物4a之合成>
《步驟1：1-(3,4-二烯丙氧基苯基)乙酮之合成》
向300mL二口圓底燒瓶添加3,4-二羥基苯乙酮(10.0g，65.7mmol)使其溶解於丙酮(145mL)，添加碳酸鉀(36.3g，263mmol)，於室溫下攪拌1小時後，添加烯丙基溴(37.4g，309mmol)，使其回流2.5小時。濃縮後，添加乙酸乙酯(150mL×3)與純水(150mL)進行萃取，藉由飽和鹽水(150mL×3)將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮，獲得淡黃色固體15.2g(65.2mmol，99%)。
將獲得之中間化合物21之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 2.55(3H,s),4.65-4.70(4H,m),5.29-5.34(2H,m),5.41-5.48(2H,m),6.03-6.14(2H,m),6.88-6.91(1H,m),7.53-7.56(2H,m).
《步驟2：1-(4,5-二烯丙氧基-2-硝基苯基)乙酮之合成》
向300mL圓底燒瓶添加中間化合物21(15.2g，65.2mmol)使其溶解於乙酸(60mL)，於冰浴上花20分鐘緩慢添加發煙硝酸(27.3mL)，藉由TLC確認反應之進行後，將其注入至純水(200mL)。藉由氯仿(250mL×3)進行萃取，藉由5%碳酸氫鈉水溶液(250mL×2)、飽和鹽水(250mL×2)依序將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮。藉由矽膠管柱層析法進行 精製(己烷：乙酸乙酯=4：1)，獲得淡黃色固體。自乙醇進行再結晶，獲得針狀淡黃色結晶6.08g(21.9mmol，34%)。
將獲得之中間化合物22之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 2.49(3H,s),4.68-4.72(4H,m),5.35-5.40(2H,m),5.42-5.51(2H,m),6.00-6.12(2H,m),6.76(1H,s),7.62(1H,s).
《步驟3：1-(4,5-二烯丙氧基-2-硝基苯基)乙醇之合成》
向300mL圓底燒瓶添加中間化合物22(6.08g，21.9mmol)使其溶解於四氫呋喃(70mL)，添加甲醇(30mL)後，於冰浴上一點一點地添加硼氫化鈉(2.90g，76.7mmol)，於0℃攪拌1.5小時。濃縮後，添加乙酸乙酯(100mL×3)、純水(100mL)、2N鹽酸(15mL)進行萃取，藉由飽和鹽水(150mL×2)將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮。藉由己烷將獲得之黃褐色固體洗淨，進行抽氣過濾，獲得黃色固體5.51g(19.7mmol，90%)。
將獲得之中間化合物23之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 1.54(3H,d,J=6.3Hz),2.27(1H,d,J=3.6Hz),4.64-4.76(4H,m),5.32-5.38(2H,m),5.42-5.50(2H,m),5.51-5.57(1H,m),6.02-6.13(2H,m),7.30(1H,s),7.59(1H,s).
《步驟4：N-丁二醯亞胺基碳酸1-(4,5-二烯丙氧基-2-硝基苯基) 乙酯之合成》
向300mL二口圓底燒瓶添加中間化合物23(2.86g，10.2mmol)使其溶解於乾乙腈(35mL)，添加二(N-丁二醯亞胺基)碳酸酯(4.46g，17.4mmol)、三乙胺(3.21g，31.7mmol)，於氮氣環境下於室溫下攪拌19小時。濃縮後，添加乙酸乙酯(250mL×3)與純水(250mL)進行萃取，藉由飽和鹽水(250mL×3)將有機層洗淨，藉由無水硫酸鎂進行乾燥、過濾、濃縮。藉由矽膠層析法進行精製(己烷：乙酸乙酯=2：1)，獲得白黃色固體3.13g(7.45mmol，73%)。
將獲得之中間化合物24之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 1.74(3H,d,J=6.4Hz),2.80(4H,s),4.65-4.69(2H,m),4.73-4.86(2H,m),5.33-5.41(2H,m),5.43-5.54(2H,m),6.01-6.16(2H,m),6.50(1H,q,J=6.4Hz),7.10(1H,s),7.65(1H,s).
《步驟5：N-丁二醯亞胺基碳酸1-(2-硝基-4,5-雙(3-三(三甲基矽氧基)矽基丙氧基)苯基)乙酯之合成》
向30mL二口圓底燒瓶添加中間化合物24(400mg，0.95mmol)使其溶解於乾四氫呋喃(10mL)，添加三(三甲基矽氧基)矽烷(1.41g，4.75mmol)、卡斯特觸媒(10滴)，於氮氣環境下於室溫下攪拌27小時。濃縮後，藉由矽膠層析法進行精製(己烷：乙酸乙酯=8：1，包含1%四甲氧基矽烷)，獲得黃色黏體314mg(0.31mmol，33%)。
將獲得之中間化合物2a之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.10-0.11(54H,m),0.54-0.65(4H, m),1.75(3H,d,J=6.4Hz),1.83-1.97(4H,m),2.80(4H,s),3.97-4.17(4H,m),6.52(1H,q,J=6.6Hz),7.05(1H,s),7.61(1H,s).
《步驟6：3-三甲氧基矽基丙基胺基甲酸1-(2-硝基-4,5-雙(3-三(三甲基矽氧基)矽基丙氧基)苯基)乙酯(1-(2-nitro-4,5-bis(3-tris(trimethylsiloxy)silylpropoxy)phenyl)ethyl 3-trimethoxysilylpropyl carbamate)之合成》
向30mL二口圓底燒瓶添加中間化合物2a(147mg，0.145mmol)使其溶解於乾四氫呋喃(7mL)，添加3-胺基丙基三甲氧基矽烷(78mg，0.43mmol)、三乙胺(44mg，0.43mmol)，於氮氣環境下，遮光地於室溫下攪拌13小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯=3：1，包含1%四甲氧基矽烷)，獲得明黃色黏體64mg(0.059mmol，41%)。
將獲得之化合物4a之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.09-0.12(54H,m),0.51-0.67(6H,m),1.52-1.66(5H,m),1.81-1.94(4H,m),3.03-3.22(2H,m),3.56(9H,s),3.93-4.05(4H,m),4.88(1H,t,J=5.9Hz),6.37(1H,q,J=6.4Hz),6.97(1H,s),7.55(1H,s).
<化合物4b之合成>
《步驟1：N-丁二醯亞胺基碳酸1-(4,5-雙(3-(1,1,3,3,5,5,5-七甲基三矽氧烷基)丙氧基)-2-硝基苯基)乙酯之合成》
向30mL二口圓底燒瓶添加中間化合物24(800mg，1.90mmol)使其溶解於乾四氫呋喃(15mL)，添加1,1,3,3,5,5,5-七甲基三矽氧烷(1.69g，7.61mmol)、卡斯特觸媒(10滴)，於氮氣環境下於室溫下攪拌4小時。濃縮後，藉由矽膠層析法進行精製(己烷：乙酸乙酯=8：1，包含1%四甲氧基矽烷)，獲得黃色黏體527mg(0.60mmol，32%)。
將獲得之化合物2b之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.03(6H,s),0.04(6H,s),0.08(9H,s),0.09(9H,s),0.12(6H,s),0.12(6H,s),0.63-0.73(4H,m),1.75(3H,d,J=6.4Hz),1.84-1.96(4H,m),2.80(4H,s),3.97-4.21(4H,m),6.48-6.55(1H,m),7.05(1H,s),7.61(1H,s).
《步驟2：3-三甲氧基矽基丙基胺基甲酸1-(4,5-雙(3-(1,1,3,3,5,5,5-七甲基三矽氧烷基)丙氧基)-2-硝基苯基)乙酯(1-(4,5-bis(3-(1,1,3,3,5,5,5-heptamethyltrisiloxanyl)propoxy)-2-nitrophenyl)ethyl 3-trimethoxysilylpropyl carbamate)之合成》
向30mL二口圓底燒瓶添加中間化合物2b(500mg，0.578mmol)使其溶解於乾四氫呋喃(10mL)，添加3-胺基丙基三甲氧基矽烷(0.122mL，0.692mmol)、三乙胺(70mg，0.69mmol)，於氮氣環境下，遮光地於室溫下攪拌3小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯=3：1，包含1%四甲氧基矽烷)，獲得明黃色黏體342mg(0.368mmol，64%)。
將獲得之化合物4b之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.025(6H,s),0.031(6H,s),0.080(9H,s),0.085(9H,s),0.11(6H,s),0.12(6H,s),0.58-0.71(6H,m),1.53-1.67(5H,m),1.82-1.94(4H,m),3.03-3.22(2H,m),3.56(9H,s),3.99(2H,t,J=7.0Hz),4.03(2H,t,J=7.0Hz),4.90(1H,t,J=5.8Hz),6.37(1H,q,J=6.4Hz),6.97(1H,s),7.55(1H,s).
<化合物4c之合成>
《步驟1：N-丁二醯亞胺基碳酸1-(4,5-雙(3-(聚二甲基矽氧烷基)丙氧基)-2-硝基苯基)乙酯之合成》
向200mL二口圓底燒瓶添加中間化合物24(1.01g，2.39mmol)使其溶解於乾四氫呋喃(30mL)，添加聚二甲基矽氧烷(6.69g，6.19mmol)、卡斯特觸媒(10滴)，於氮氣環境下於室溫下攪拌20小時。濃縮後，藉由矽膠層析法進行精製(己烷：乙酸乙酯=8：1，包含1%四甲氧基矽烷)，獲得黃色黏體630mg(0.26mmol，11%)。
將獲得之化合物2c之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.03-0.14(156H,m),0.49-0.57(4H,m),0.62-0.75(4H,m),0.88(6H,t,J=7.0Hz),1.24-1.38(8H,m),1.75(3H,d,J=6.4Hz),1.83-1.97(4H,m),2.80(4H,s),3.97-4.21(4H,m),6.48-6.55(1H,m),7.04(1H,s),7.61(1H,s).
《步驟2：3-三甲氧基矽基丙基胺基甲酸1-(4,5-雙(3-(聚二甲基矽氧烷基)丙氧基)-2-硝基苯基)乙酯(1-(4,5-bis(3-(polydimethylsiloxanyl)propoxy)-2-nitrophenyl)ethyl 3-trimethoxysilylpropyl carbamate)之合成》
向30mL二口圓底燒瓶添加中間化合物2c(305mg，0.12mmol)使其溶解於乾四氫呋喃(12mL)，添加3-胺基丙基三甲氧基矽烷(3-aminopropyltrimethoxysilane)(66mg，0.37mmol)、三乙胺(37mg，0.37mmol)，於氮氣環境下，遮光地於室溫下攪拌2.5小時。濃縮後，藉由矽膠管柱層析法進行精製(己烷：乙酸乙酯=2：1，包含1%四甲氧基矽烷)，獲得黃色黏體91mg(0.036mmol，29%)。
將獲得之化合物4c之鑑定結果示於以下。
1H NMR(CDCl3/TMS,400MHz)：δ 0.02-0.14(156H,m),0.49-0.57(4H,m),0.58-0.71(6H,m),0.88(3H,t,J=7.0Hz),1.24-1.36(8H,m),1.52-1.65(5H,m),1.81-1.94(4H,m),3.03-3.23(2H,m),3.56(9H,s),3.98(2H,t,J=7.0Hz),4.03(2H,t,J=7.0Hz),4.89(1H,t,J=5.7Hz),6.33-6.40(1H,m),6.97(1H,s),7.55(1H,s).
<表面修飾>
藉由純水、丙酮、甲醇、氯仿對附熱氧化膜之矽晶圓(SiO2/Si基板)進行各5分鐘之超音波洗淨，於氮氣氣流下進行乾燥後，藉由UV-臭氧清潔器照射1小時UV進行預處理。
其次，將藉由上述方法所獲得之化合物3b、4a、4b、4c分別溶解於乾甲苯製備1mM(化合物4a、4b、4c設為0.1mM)溶液，放入上述經預處理之基板，於氮氣環境下於室溫下浸漬20小時(化合物4a、4c設為24小時)。藉由氯仿對基板進行5分鐘超音波洗淨，於氮氣氣流下進行乾燥(下述步驟1)。
<光照射>
於大氣中向經修飾之基板藉由超高壓水銀燈隔著濾光片照射波長365nm、照度15J(若僅為化合物4b則設為10J)之光。藉由氯仿對基板進行5分鐘超音波洗淨，於氮氣氣流下進行乾燥(下述步驟2)。
<接觸角測定>
使用接觸角計(協和界面科學股份有限公司)根據液滴法、θ/2法，分別使用水、二碘甲烷、1-溴基萘對探測液體測定光照射前後之靜態接觸角。將其結果記載於表。於下述表中，「光照射前」係指上述步驟1剛結束後，「光照射後」係指上述步驟2剛結束後。
<XPS測定>
藉由X射線光電子光譜法(X-ray photoelectron spectroscopy，以下稱作「XPS」)進行評價。圖5表示藉由化合物3b修飾之基板之光照射前後之XPS光譜，圖6表示藉由化合物4a修飾之基板之光照射前後之XPS光譜，圖7表示藉由化合物4b修飾之基板之光照射前後之XPS光譜，圖8表示藉由化合物4c修飾之基板之光照射前後之XPS光譜。
獲得之修飾基板係藉由靜態接觸角測定及XPS對光照射前後進行比較。
由於修飾後接觸角較大，顯示撥水性，故認為基板上經修飾。
又，依據XPS，可確認化合物3b、4a、4c於修飾後出現來自於硝基之波峰。關於化合物4b，未確認到利用XPS所測得之來自於硝基之明確之波峰，認為原因在於膜厚較薄，無法獲得充分之感度。
確認於光照射後接觸角變小。又，依據XPS，可確認化合物3b、4a、4c於光照射後來自於硝基之波峰消失。又，於任一種化合物中，均由於C(碳)波峰減少，故而可確認光分解性基由於光照射而脫離。
Claims (14)
- 一種化合物，其係由下述通式(1)所表示，
- 如請求項1所述之化合物，其中，上述R21或R22為甲基、異丙基、第三丁基之任一種。
- 一種圖案形成用基板，其具有經請求項1或2所述之化合物化學修飾之表面。
- 一種光分解性偶合劑，其由請求項1或2所述之化合物所構成。
- 一種圖案形成方法，其於對象物之被處理面形成圖案，且具備如下步驟：使用請求項1或2所述之化合物，對上述被處理面進行化學修飾；向經化學修飾之上述被處理面照射特定圖案之光，生成由親水區域及撥水 區域所構成之潛像；以及於上述親水區域或撥水區域配置圖案形成材料。
- 如請求項5所述之圖案形成方法，其中，上述特定圖案對應於電子器件用之電路圖案。
- 如請求項5所述之圖案形成方法，其中，上述圖案形成材料包含導電材料、半導體材料、或絕緣材料。
- 如請求項7所述之圖案形成方法，其中，上述導電材料由導電性微粒子分散液所構成。
- 如請求項7所述之圖案形成方法，其中，上述半導體材料由有機半導體材料分散液所構成。
- 一種圖案形成方法，其於對象物之被處理面形成圖案，且具備如下步驟：使用請求項1或2所述之化合物，對上述被處理面進行化學修飾；向經化學修飾之上述被處理面照射特定圖案之光，生成由親水區域及撥水區域所構成之潛像；以及於上述親水區域配置無電解鍍覆用觸媒，進行無電解鍍覆。
- 如請求項5至10中任一項所述之圖案形成方法，其中，上述對象物為具有可撓性之基板。
- 如請求項5至10中任一項所述之圖案形成方法，其中，上述對象物由樹脂材料所構成。
- 如請求項5至10中任一項所述之圖案形成方法，其中，上述光包括波長包含於200nm~450nm之範圍之光。
- 一種電晶體之製造方法，其係具有閘極電極、源極電極、及汲極電極之電晶體之製造方法，且 該方法包括如下步驟：藉由請求項5至13中任一項所述之圖案形成方法形成上述閘極電極、上述源極電極、及上述汲極電極中之至少1種電極。
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