TWI795330B - Manufacturing method and manufacturing apparatus of semiconductor crystal wafer - Google Patents

Manufacturing method and manufacturing apparatus of semiconductor crystal wafer Download PDF

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TWI795330B
TWI795330B TW111127975A TW111127975A TWI795330B TW I795330 B TWI795330 B TW I795330B TW 111127975 A TW111127975 A TW 111127975A TW 111127975 A TW111127975 A TW 111127975A TW I795330 B TWI795330 B TW I795330B
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semiconductor crystal
metal wire
crystal ingot
wafer
grooves
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TW111127975A
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Chinese (zh)
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TW202325925A (en
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酒井愼介
千葉哲也
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日商薩克瑟斯有限公司
日商得來化學有限公司
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Priority claimed from JP2022067973A external-priority patent/JP7104909B1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/02—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding grooves, e.g. on shafts, in casings, in tubes, homokinetic joint elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

An object of the present invention is to provide a manufacturing method and a manufacturing apparatus of semiconductor crystal wafer, which can easily and certainly manufacture semiconductor crystal wafer with high quality. The manufacturing method of semiconductor crystal wafer is a method for obtaining a Si wafer obtained by cutting out a wafer with a slice shape from a Si ingot having been ground into a cylindrical shape and performing high-precision grinding processes to the surface of the wafer, the manufacturing method including: a groove processing step (STEP100 / FIG. 1), a cut-off step (STEP110 / FIG.1), a first surface processing step (STEP120 / FIG. 1), and a second surface processing step (STEP130 / FIG.1).

Description

半導體結晶晶圓的製造方法及製造裝置 Semiconductor crystal wafer manufacturing method and manufacturing device

本發明係關於一種從被研磨加工成圓筒形狀的半導體結晶晶錠以單片(Slice)狀方式裁切出晶圓並對該晶圓的表面施予高精度研磨加工的半導體結晶晶圓的製造方法。 The present invention relates to a semiconductor crystal wafer in which a wafer is cut into slices from a semiconductor crystal ingot polished into a cylindrical shape, and the surface of the wafer is polished with high precision. Manufacturing method.

以往，就作為上述種類的半導體結晶晶圓的Si晶圓或SiC晶圓的製造方法而言，已知如下述專利文獻1所示的半導體結晶晶圓的製造方法，其係包含晶圓形狀形成程序、加工變質層除去程序、鏡面拋光程序；其中，作為晶圓形狀形成程序包含：將經結晶成長的單結晶塊予以加工成圓柱狀之晶錠的晶錠成形程序；於外周的一部分形成切口而作為顯示晶錠的結晶方位之標記的結晶方位成形程序；將單結晶的晶錠予以切片而加工成薄圓板狀之晶圓的切片程序；使用未達改良莫氏硬度之磨粒將晶圓平坦化的平坦化程序；形成刻印的刻印形成程序；以及對外周部修邊的修邊程序；接著，作為加工變質層除去程序係包含除去先前程序中導入於晶圓的加工變質層的加工變質層除去程序；最後，作為鏡面拋光程序係包含同時併用拋光墊的機械性作用與漿液(slurry)的化學性作用而進行拋光的化學機械拋光(CMP)程序。 Conventionally, as a method for manufacturing Si wafers or SiC wafers as the above-mentioned types of semiconductor crystal wafers, a method for manufacturing semiconductor crystal wafers as shown in the following Patent Document 1 is known, which includes wafer shape formation. program, processing altered layer removal program, and mirror polishing process; among them, the wafer shape forming process includes: an ingot forming process in which a single crystal ingot grown through crystallization is processed into a cylindrical ingot; and a notch is formed on a part of the outer periphery The crystal orientation forming process used as a mark showing the crystal orientation of the crystal ingot; the slicing process of slicing a single crystal crystal ingot and processing it into a thin disc-shaped wafer; using abrasive grains that have not reached the modified Mohs hardness. A flattening process for circular flattening; an imprint forming process for forming imprints; and an edge trimming process for trimming the periphery; and then, as a process-altered layer removal process, a process that includes removing the process-affected layer introduced into the wafer in the previous process Degenerated layer removal process; finally, as a mirror polishing process, it includes a chemical mechanical polishing (CMP) process that simultaneously uses the mechanical action of the polishing pad and the chemical action of the slurry (slurry) to perform polishing.

(先前技術文獻) (Prior Art Literature)

(專利文獻) (patent documents)

專利文獻1：日本專利公報特開2020-15646號 Patent Document 1: Japanese Patent Laid-Open No. 2020-15646

然而，在上述習知的半導體結晶晶圓的製造方法中，會有製造程序多而複雜，使得裝置構成複雜且製造成本攀升的問題。 However, in the conventional method for manufacturing semiconductor crystal wafers, there are many and complicated manufacturing procedures, which complicate the structure of the device and increase the manufacturing cost.

另一面，在將製造程序簡略化的情形，會難以穩定獲得半導體結晶晶圓所要求的品質。 On the other hand, if the manufacturing process is simplified, it will be difficult to stably obtain the required quality of semiconductor crystal wafers.

因此，本發明的目的在於提供一種可簡易並且確實地製造高品質的半導體結晶晶圓的半導體結晶晶圓的製造方法及製造裝置。 Accordingly, an object of the present invention is to provide a semiconductor crystal wafer manufacturing method and manufacturing apparatus capable of easily and reliably manufacturing a high-quality semiconductor crystal wafer.

第一發明的半導體結晶晶圓的製造方法，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造方法，其係具備： The method for manufacturing a semiconductor crystal wafer according to the first invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut out in a single sheet form from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and includes:

溝加工程序，係形成環繞於前述半導體結晶晶錠之側面整體的複數個凹溝；以及 The groove processing process is to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot; and

截斷程序，係藉由配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線將前述半導體結晶晶錠予以截斷成單片狀而獲得半導體結晶晶圓； The cutting process is to cut the semiconductor crystal ingot into a single piece by a plurality of metal wires arranged in the plurality of grooves formed in the groove processing process to obtain a semiconductor crystal wafer;

前述截斷程序在使配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線一邊繞行一邊行進而藉此將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠的接觸部的兩端藉由在行進方向上支持該金屬線的金屬線支持部支持該金屬線； In the cutting process, when the plurality of metal wires arranged in the plurality of concave grooves formed in the groove processing step are detoured and run to cut the semiconductor crystal ingot into individual pieces, the metal wires are cut into pieces. Both ends of the contact portion with the semiconductor crystal ingot support the metal wire by a wire support portion supporting the metal wire in a traveling direction;

前述金屬線支持部為與前述半導體結晶晶錠之軸線方向呈平行地配置的圓筒形狀的一對棒體，該一對棒體係於側面整體形成有支持溝，該支持溝係與形成前述複數個凹溝之溝加工滾筒研磨石的複數個凸部相對應者。 The above-mentioned metal wire supporting part is a pair of cylindrical rods arranged parallel to the axial direction of the above-mentioned semiconductor crystal ingot. The pair of rods are integrally formed with a support groove on the side surface. The one corresponding to the plurality of convex parts of the groove processing roller grinding stone of the concave groove.

第二發明的半導體結晶晶圓的製造方法，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造方法，其係具備： The method for manufacturing a semiconductor crystal wafer according to the second invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut into a single sheet from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and includes:

溝加工程序，係形成環繞於前述半導體結晶晶錠之側面整體的複數個凹溝；以及 The groove processing process is to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot; and

截斷程序，係藉由配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線將前述半導體結晶晶錠予以截斷成單片狀而獲得半導體結晶晶圓； The cutting process is to cut the semiconductor crystal ingot into a single piece by a plurality of metal wires arranged in the plurality of grooves formed in the groove processing process to obtain a semiconductor crystal wafer;

前述截斷程序在使配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線一邊繞行一邊行進而藉此將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠的接觸部的兩端藉由在行進方向上支持該金屬線的金屬線支持部支持該金屬線； In the cutting process, when the plurality of metal wires arranged in the plurality of concave grooves formed in the groove processing step are detoured and run to cut the semiconductor crystal ingot into individual pieces, the metal wires are cut into pieces. Both ends of the contact portion with the semiconductor crystal ingot support the metal wire by a wire support portion supporting the metal wire in a traveling direction;

前述金屬線支持部係沿著前述半導體結晶晶錠的側面外形而行進。 The above-mentioned metal wire supporting part runs along the side profile of the above-mentioned semiconductor crystal ingot.

第三發明的半導體結晶晶圓的製造方法，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造方法，其係具備： The method for manufacturing a semiconductor crystal wafer according to the third invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut into a single sheet from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and includes:

溝加工程序，係形成環繞於前述半導體結晶晶錠之側面整體的複數個凹溝；以及 The groove processing process is to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot; and

截斷程序，係藉由配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線將前述半導體結晶晶錠予以截斷成單片狀而獲得半導體結晶晶圓； The cutting process is to cut the semiconductor crystal ingot into a single piece by a plurality of metal wires arranged in the plurality of grooves formed in the groove processing process to obtain a semiconductor crystal wafer;

前述截斷程序在使配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線一邊繞行一邊行進而藉此將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠的接觸部的兩端藉由在行進方向上支持該金屬線的金屬線支持部支持該金屬線； In the cutting process, when the plurality of metal wires arranged in the plurality of concave grooves formed in the groove processing step are detoured and run to cut the semiconductor crystal ingot into individual pieces, the metal wires are cut into pieces. Both ends of the contact portion with the semiconductor crystal ingot support the metal wire by a wire support portion supporting the metal wire in a traveling direction;

前述金屬線支持部係與前述金屬線的行進方向的位移連動而行進。 The said wire support part advances in conjunction with the displacement of the said wire in the advancing direction.

第四發明的半導體結晶晶圓的製造方法，係從被研磨加工成筒狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造方法，其中， The method for manufacturing a semiconductor crystal wafer according to the fourth invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut out in a single sheet form from a semiconductor crystal ingot polished into a cylindrical shape, wherein,

在藉由複數條金屬線以單片狀方式截斷前述半導體結晶晶錠而獲得半導體結晶晶圓的溝加工程序中， In the groove processing process of obtaining a semiconductor crystal wafer by cutting the aforementioned semiconductor crystal ingot in a monolithic manner by a plurality of metal wires,

在藉由使前述複數條金屬線一邊繞行一邊行進而將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠之接觸部的兩端藉由支持該金屬線的金屬線支持部支持該金屬線； When the semiconductor crystal ingot is cut into pieces by running the plurality of metal wires around them, the metal wires are supported at both ends of the contact portion between the metal wires and the semiconductor crystal ingot. the metal wire supporting portion supports the metal wire;

前述金屬線支持部係藉由一對的夾持板、導引部、及棒體，使該棒體支持前述金屬線，並且沿著該半導體結晶晶錠的側面外形而行進；其中，該一對的夾持板為具有與前述半導體結晶晶錠之兩端面相對應的形狀的板體並夾持該兩端面；該導引部係形成於該夾持板的外周；該棒體係沿著該導引部而行進。 The aforementioned metal wire supporting part uses a pair of clamping plates, a guide part, and a rod, so that the rod supports the aforementioned metal wire and travels along the side profile of the semiconductor crystal ingot; wherein, the one The pair of clamping plates is a plate with a shape corresponding to the two end faces of the aforementioned semiconductor crystal ingot and clamps the two end faces; the guide part is formed on the outer periphery of the clamping plate; the rod system runs along the Guidance Department and proceed.

第五發明的半導體結晶晶圓的製造裝置，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造裝置，其係具備： The semiconductor crystal wafer manufacturing apparatus of the fifth invention is a semiconductor crystal wafer manufacturing apparatus that cuts wafers out of a semiconductor crystal ingot that has been ground into a cylindrical shape in a monolithic manner, and includes:

溝加工滾筒研磨石，係用以形成環繞於前述半導體結晶晶錠之側面整體之複數個凹溝，並於側面形成有與該複數個凹溝相對應的複數個凸部； The groove processing roller grinding stone is used to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot, and a plurality of protrusions corresponding to the plurality of grooves are formed on the side surface;

金屬線鋸部，係使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進而對藉由前述滾筒研磨石形成有環繞側面整體之複數個凹溝的前述半導體結晶晶錠進行截斷；以及 The metal wire saw section cuts the semiconductor crystal ingot having the plurality of grooves surrounding the entire side surface formed by the roller grinding stone by running a plurality of metal wires arranged in a plurality of grooves while going around; as well as

金屬線支持部，係在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端在行進方向上支持該金屬線； The metal wire supporting part supports the metal wire in the direction of travel at both ends of the contact part between the metal wire and the semiconductor crystal ingot of the metal wire saw part;

前述金屬線支持部為與前述半導體結晶晶錠之軸線方向呈平行地配置的圓筒形狀的一對棒體，該一對棒體係於側面整體形成有支持溝，該支持溝係與前述溝加工滾筒研磨石的複數個凸部相對應者。 The metal wire supporting part is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot. The pair of rods are integrally formed with supporting grooves on the side surfaces. The supporting grooves are processed with the aforementioned grooves. Corresponding to the plurality of convex parts of the grinding wheel.

第五發明的半導體結晶晶圓的製造裝置係實現第一發明的半導體結晶晶圓的製造方法的裝置，並且根據第一發明的半導體結晶晶圓的製造方法及第五發明的半導體結晶晶圓的製造裝置，具體而言，藉由於側面形成有複數個凸部的溝加工滾筒研磨石，形成環繞於半導體結晶晶錠之側面整體的複數個凹溝。 The manufacturing device of the semiconductor crystal wafer of the fifth invention is a device for realizing the manufacturing method of the semiconductor crystal wafer of the first invention, and according to the manufacturing method of the semiconductor crystal wafer of the first invention and the semiconductor crystal wafer of the fifth invention Specifically, the manufacturing apparatus forms a plurality of concave grooves surrounding the entire side surface of a semiconductor crystal ingot by processing a grinding wheel grinding stone with a plurality of convex portions formed on the side surface.

並且，藉由金屬線鋸部，使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進，藉此能夠以凹部為導引而藉由金屬線高精度地將半導體結晶晶錠截斷成單片狀。 In addition, the plurality of metal wires arranged in the plurality of concave grooves are made to travel while detouring by the wire saw part, whereby the semiconductor crystal ingot can be cut into pieces with high precision by the metal wires guided by the concave portion. Monolithic.

在此，藉由金屬線支持部，使配置於凹溝的金屬線在其與晶錠之接觸部的兩端由金屬線支持部所支持，所以可防止金屬線在接觸部變得彎曲，並維持接近水平的狀態。 Here, the metal wire arranged in the groove is supported by the metal wire supporting part at both ends of the contact part with the crystal ingot by the metal wire supporting part, so that the metal wire can be prevented from being bent at the contact part, and maintain a near-level state.

因此，防止在截斷時金屬線變彎曲而使截斷應力偏靠兩端部側，並可實現無起伏、條紋的截斷面，而可大幅地將在平坦化程序中一般所進行的游離研磨石加工(亦即，一次至四次的複數次的拋光)等複雜的製造程序予以簡略化。 Therefore, it is possible to prevent the metal wire from being bent during cutting and to cause the cutting stress to be biased towards both ends, and to realize a cut surface without undulations and streaks, and to significantly process free grinding stones that are generally performed in the planarization process. (That is, one to four multiple times of polishing) and other complicated manufacturing procedures are simplified.

如上述，根據第一發明的半導體結晶晶圓的製造方法及第五發明的半導體結晶晶圓的製造裝置，可簡單並確實地製造高品質的半導體結晶晶圓。 As described above, according to the method for manufacturing a semiconductor crystal wafer of the first invention and the apparatus for manufacturing a semiconductor crystal wafer of the fifth invention, a high-quality semiconductor crystal wafer can be easily and reliably manufactured.

此外，根據第一發明的半導體結晶晶圓的製造方法及第五發明的半導體結晶晶圓的製造裝置，將金屬線支持部設為一對棒體，藉此可同時地在相同位置支持複數條金屬線。 In addition, according to the manufacturing method of the semiconductor crystal wafer of the first invention and the manufacturing apparatus of the semiconductor crystal wafer of the fifth invention, a pair of rods are used as the metal wire supporting part, whereby a plurality of wires can be simultaneously supported at the same position. metal wire.

如上述，根據第一發明的半導體結晶晶圓的製造方法及第五發明的半導體結晶晶圓的製造裝置，可實際地有效率而簡單並確實地製造高品質的半導體結晶晶圓。 As described above, according to the manufacturing method of the semiconductor crystal wafer of the first invention and the manufacturing apparatus of the semiconductor crystal wafer of the fifth invention, a high-quality semiconductor crystal wafer can be manufactured efficiently, simply, and reliably in practice.

再者，根據第一發明的半導體結晶晶圓的製造方法及第五發明的半導體結晶晶圓的製造裝置，在棒體的側面整體形成與溝加工滾筒研磨石之複數個凸部相對應的支持溝，藉此使繞行的金屬線在截斷時不會橫向移動而確實地支持。 Furthermore, according to the manufacturing method of the semiconductor crystal wafer of the first invention and the manufacturing apparatus of the semiconductor crystal wafer of the fifth invention, the support corresponding to the plurality of protrusions of the groove processing drum grinding stone is formed on the entire side surface of the rod body. Grooves, so that the metal wires that go around will not move laterally when they are cut, but they will be supported reliably.

如上述，根據第一發明的半導體結晶晶圓的製造方法及第五發明的半導體結晶晶圓的製造裝置，可實際地更簡單並確實而穩定地製造高品質的半導體結晶晶圓。 As described above, according to the manufacturing method of the semiconductor crystal wafer of the first invention and the manufacturing apparatus of the semiconductor crystal wafer of the fifth invention, a high-quality semiconductor crystal wafer can be manufactured more easily, reliably and stably in practice.

第六發明的半導體結晶晶圓的製造裝置，係在第五發明中， The manufacturing device of the semiconductor crystal wafer according to the sixth invention is the fifth invention,

前述金屬線支持部係經由軸承，使前述棒體構成為在無負荷狀態下旋轉自如。 The said wire supporting part is configured so that the said rod body can rotate freely in a no-load state via a bearing.

根據第六發明的半導體結晶晶圓的製造裝置，使棒體構成為經由軸承而在無負荷的狀態下可進行旋轉，藉此可一邊使金屬線的繞行速度維持一邊確實地支持金屬線。除此之外，還可防止金屬線對棒體的刮削。 According to the manufacturing apparatus of the semiconductor crystal wafer of the sixth invention, the rod body is configured to be rotatable through a bearing in a no-load state, whereby the wire can be reliably supported while maintaining the winding speed of the wire. In addition, it can also prevent the scraping of the rod by the metal wire.

如上述，根據第六發明的半導體結晶晶圓的製造裝置，可實際地簡單並確實地穩定地製造高品質的半導體結晶晶圓。 As described above, according to the semiconductor crystal wafer manufacturing apparatus of the sixth invention, a high-quality semiconductor crystal wafer can be manufactured simply, reliably and stably in practice.

第七發明的半導體結晶晶圓的製造裝置，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造裝置，其係具備： The semiconductor crystal wafer manufacturing apparatus of the seventh invention is a semiconductor crystal wafer manufacturing apparatus that cuts wafers from a semiconductor crystal ingot that has been ground into a cylindrical shape in a single sheet, and includes:

溝加工滾筒研磨石，係用以形成環繞於前述半導體結晶晶錠之側面整體之複數個凹溝，並於側面形成有與該複數個凹溝相對應的複數個凸部； The groove processing roller grinding stone is used to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot, and a plurality of protrusions corresponding to the plurality of grooves are formed on the side surface;

金屬線鋸部，係使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進而對藉由前述滾筒研磨石形成有環繞側面整體之複數個凹溝的前述半導體結晶晶錠進行截斷；以及 The metal wire saw section cuts the semiconductor crystal ingot having the plurality of grooves surrounding the entire side surface formed by the roller grinding stone by running a plurality of metal wires arranged in a plurality of grooves while going around; as well as

金屬線支持部，係在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端在行進方向上支持該金屬線； The metal wire supporting part supports the metal wire in the direction of travel at both ends of the contact part between the metal wire and the semiconductor crystal ingot of the metal wire saw part;

前述金屬線支持部係沿著前述半導體結晶晶錠的側面外形而行進。 The above-mentioned metal wire supporting part runs along the side profile of the above-mentioned semiconductor crystal ingot.

第七發明的半導體結晶晶圓的製造裝置係實現第二發明的半導體結晶晶圓的製造方法的裝置，根據第二發明的半導體結晶晶圓的製造方法及第七發明的半導體結晶晶圓的製造裝置，使金屬線支持部沿著半導體結晶晶錠 的側面外形而行進，藉此可使金屬線支持部始終定位於金屬線與半導體結晶晶錠之接觸部的兩端。 The manufacturing apparatus of the semiconductor crystal wafer of the seventh invention is an apparatus for realizing the manufacturing method of the semiconductor crystal wafer of the second invention, the manufacturing method of the semiconductor crystal wafer according to the second invention and the manufacturing of the semiconductor crystal wafer of the seventh invention Apparatus for enabling wire support along semiconductor crystal ingot The side shape of the metal wire can be advanced, so that the metal wire supporting part can always be positioned at the two ends of the contact part between the metal wire and the semiconductor crystal ingot.

如上述，根據第二發明的半導體結晶晶圓的製造方法及第七發明的半導體結晶晶圓的製造裝置，可實際地有效率而簡單並確實地製造高品質的半導體結晶晶圓。 As described above, according to the semiconductor crystal wafer manufacturing method of the second invention and the semiconductor crystal wafer manufacturing apparatus of the seventh invention, a high-quality semiconductor crystal wafer can be manufactured efficiently, simply, and reliably in practice.

第八發明的半導體結晶晶圓的製造裝置，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造裝置，其係具備： The semiconductor crystal wafer manufacturing apparatus of the eighth invention is a semiconductor crystal wafer manufacturing apparatus that cuts wafers out of a semiconductor crystal ingot that has been ground into a cylindrical shape in a monolithic manner, and includes:

溝加工滾筒研磨石，係用以形成環繞於前述半導體結晶晶錠之側面整體之複數個凹溝，並於側面形成有與該複數個凹溝相對應的複數個凸部； The groove processing roller grinding stone is used to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot, and a plurality of protrusions corresponding to the plurality of grooves are formed on the side surface;

金屬線鋸部，係使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進而對藉由前述滾筒研磨石形成有環繞側面整體之複數個凹溝的前述半導體結晶晶錠進行截斷；以及 The metal wire saw section cuts the semiconductor crystal ingot having the plurality of grooves surrounding the entire side surface formed by the roller grinding stone by running a plurality of metal wires arranged in a plurality of grooves while going around; as well as

金屬線支持部，係在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端在行進方向上支持該金屬線； The metal wire supporting part supports the metal wire in the direction of travel at both ends of the contact part between the metal wire and the semiconductor crystal ingot of the metal wire saw part;

前述金屬線支持部係與前述金屬線鋸部之前述金屬線的行進方向的位移連動而行進。 The wire supporting part advances in conjunction with the displacement of the wire saw part in the advancing direction of the wire.

第八發明的半導體結晶晶圓的製造裝置係實現第三發明的半導體結晶晶圓的製造方法的裝置，根據第三發明的半導體結晶晶圓的製造方法及第八發明的半導體結晶晶圓的製造裝置，使金屬線的行進方向位移量與金屬線支持部的行進方向位移量連動，藉此可維持行進方向的位置關係，並可始終以固定的支持力穩定地支持金屬線。 The manufacturing apparatus of the semiconductor crystal wafer of the eighth invention is an apparatus for realizing the manufacturing method of the semiconductor crystal wafer of the third invention, the manufacturing method of the semiconductor crystal wafer according to the third invention and the manufacturing of the semiconductor crystal wafer of the eighth invention The device makes the movement direction displacement of the metal wire and the movement direction displacement of the metal wire supporting part linked, whereby the positional relationship in the direction of movement can be maintained, and the metal wire can be stably supported at all times with a fixed support force.

如上述，根據第三發明的半導體結晶晶圓的製造方法及第八發明的半導體結晶晶圓的製造裝置，可簡單並確實地穩定地製造高品質的半導體結晶晶圓。 As described above, according to the semiconductor crystal wafer manufacturing method of the third invention and the semiconductor crystal wafer manufacturing apparatus of the eighth invention, high-quality semiconductor crystal wafers can be manufactured simply and reliably and stably.

第九發明的半導體結晶晶圓的製造裝置，係從被研磨加工成筒狀的半導體結晶晶錠以單片狀方式裁切出晶圓的半導體結晶晶圓的製造裝置，其係具備： The semiconductor crystal wafer manufacturing apparatus of the ninth invention is a semiconductor crystal wafer manufacturing apparatus that cuts wafers out of a semiconductor crystal ingot that has been ground into a cylindrical semiconductor crystal ingot in a monolithic manner, and includes:

金屬線鋸部，係使複數條金屬線一邊繞行一邊行進而對前述半導體結晶晶錠進行截斷；以及 The metal wire sawing section cuts the aforementioned semiconductor crystal ingot by running a plurality of metal wires while going around; and

金屬線支持部，在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端支持該金屬線； a metal wire support portion supporting the metal wire at both ends of the contact portion between the metal wire and the semiconductor crystal ingot of the wire saw portion;

前述金屬線支持部係藉由一對的夾持板、導引部、及棒體，使該棒體支持前述金屬線，並且沿著該半導體結晶晶錠的側面外形而行進；其中，該一對的夾持板為具有與前述半導體結晶晶錠之兩端面相對應的形狀的板體並夾持該兩端面；該導引部係形成於該夾持板的外周；該棒體係沿著該導引部而行進。 The aforementioned metal wire supporting part uses a pair of clamping plates, a guide part, and a rod, so that the rod supports the aforementioned metal wire and travels along the side profile of the semiconductor crystal ingot; wherein, the one The pair of clamping plates is a plate with a shape corresponding to the two end faces of the aforementioned semiconductor crystal ingot and clamps the two end faces; the guide part is formed on the outer periphery of the clamping plate; the rod system runs along the Guidance Department and proceed.

第九發明的半導體結晶晶圓的製造裝置係實現第四發明的半導體結晶晶圓的製造方法的裝置，根據第四發明的半導體結晶晶圓的製造方法及第九發明的半導體結晶晶圓的製造裝置，在藉由複數條金屬線將半導體結晶晶錠截斷成單片狀時，金屬線在其與晶錠之接觸部的兩端由金屬線支持部的棒體所支持，所以可防止金屬線在接觸部變得彎曲，並維持接近水平的狀態。 The manufacturing apparatus of the semiconductor crystal wafer of the ninth invention is an apparatus for realizing the manufacturing method of the semiconductor crystal wafer of the fourth invention, the manufacturing method of the semiconductor crystal wafer according to the fourth invention and the manufacturing of the semiconductor crystal wafer of the ninth invention The device, when the semiconductor crystal ingot is cut into a single piece by a plurality of metal wires, the metal wires are supported by the rods of the metal wire support part at both ends of the contact part between the metal wire and the crystal ingot, so that the metal wire can be prevented from being damaged. The contact portion becomes curved and maintains a nearly horizontal state.

在此，使金屬線支持部的棒體經由導引部而沿著半導體結晶晶錠之側面外形行進，藉此可使棒體始終定位在金屬線與半導體結晶晶錠之接觸部的兩端。 Here, the rod body of the metal wire supporting part is moved along the side profile of the semiconductor crystal ingot through the guide part, so that the rod body can always be positioned at both ends of the contact part between the metal wire and the semiconductor crystal ingot.

因此，防止在截斷時金屬線變彎曲而使截斷應力偏靠兩端部側，並可實現無起伏、條紋的截斷面，而可大幅地將在平坦化程序中一般所進行的游離研磨石加工(亦即，一次至四次的複數次的拋光)等複雜的製造程序予以簡略化。 Therefore, it is possible to prevent the metal wire from being bent during cutting and to cause the cutting stress to be biased towards both ends, and to realize a cut surface without undulations and streaks, and to significantly process free grinding stones that are generally performed in the planarization process. (That is, one to four multiple times of polishing) and other complicated manufacturing procedures are simplified.

如上述，根據第四發明的半導體結晶晶圓的製造方法及第九發明的半導體結晶晶圓的製造裝置，可簡單並確實地製造高品質的半導體結晶晶圓。 As mentioned above, according to the manufacturing method of the semiconductor crystal wafer of the 4th invention and the manufacturing apparatus of the semiconductor crystal wafer of the 9th invention, the high quality semiconductor crystal wafer can be manufactured simply and reliably.

第十發明的半導體結晶晶圓的製造裝置係在第九發明中， The semiconductor crystal wafer manufacturing apparatus of the tenth invention is the ninth invention,

前述金屬線支持部係具有行進控制部，該行進控制部係以與前記金屬線鋸部之前述金屬線的行進連動的方式使前述棒體行進。 The said wire support part has a travel control part which advances the said bar body so that it may advance in conjunction with the travel|movement of the said wire of the above-mentioned wire saw part.

根據第十發明的半導體結晶晶圓的製造裝置，使金屬線的行進與金屬線支持部之棒體的行進連動，藉此可維持行進方向的位置關係，可始終以固定的支持力穩定地支持金屬線。 According to the semiconductor crystal wafer manufacturing apparatus of the tenth invention, the traveling of the metal wire is linked with the traveling of the rod body of the metal wire supporting part, thereby maintaining the positional relationship in the traveling direction and stably supporting it with a fixed supporting force at all times. metal wire.

如上述，根據第十發明的半導體結晶晶圓的製造裝置，可簡單並且確實地穩定地製造高品質的半導體結晶晶圓。 As described above, according to the semiconductor crystal wafer manufacturing apparatus of the tenth invention, a high-quality semiconductor crystal wafer can be manufactured simply and reliably and stably.

第十一發明的半導體結晶晶圓的製造裝置係在第十發明中，前述半導體結晶晶錠係被研磨加工成圓筒形狀； The semiconductor crystal wafer manufacturing apparatus of the eleventh invention is in the tenth invention, wherein the aforementioned semiconductor crystal ingot is ground into a cylindrical shape;

前述金屬線支持部的前述夾持板為圓形的板體； The aforementioned clamping plate of the aforementioned metal wire supporting part is a circular plate body;

前述金屬線支持部的前述行進控制部為旋轉盤，該旋轉盤係設置於前述棒體沿著前述導引部而圓形地行進的旋轉中心，且可調整旋轉扭矩。 The travel control part of the wire support part is a rotary disk, which is installed at the center of rotation where the rod body travels circularly along the guide part, and the rotation torque can be adjusted.

根據第十一發明的半導體結晶晶圓的製造裝置，設置旋轉盤，該旋轉盤係在棒體沿著形成於圓型板體之外周的導引部而圓形地旋轉時控制其旋 轉扭矩，藉此可使棒體的位置與金屬線連動而正確地進行控制。因此，可使棒體以固定的負荷對金屬線進行按壓。 According to the manufacturing apparatus of the semiconductor crystal wafer of the eleventh invention, a rotating disk is provided to control the rotation of the rod body when it rotates circularly along the guide part formed on the outer periphery of the circular plate body. Torque, so that the position of the rod can be linked with the metal wire and accurately controlled. Therefore, the rod can press the metal wire with a constant load.

如上述，根據第十一發明的半導體結晶晶圓的製造裝置，可實現簡單並且確實地穩定地製造高品質的半導體結晶晶圓。 As described above, according to the semiconductor crystal wafer manufacturing apparatus of the eleventh invention, it is possible to easily and reliably and stably manufacture high-quality semiconductor crystal wafers.

第十二發明的半導體結晶晶圓的製造裝置係在第九至第十一發明中任一項發明中，前述金屬線支持部的前記棒體係設置於前記金屬線鋸部之前述金屬線的上側與下側之中的任一方或者兩方。 The semiconductor crystal wafer manufacturing device of the twelfth invention is any one of the ninth to eleventh inventions, wherein the front bar system of the aforementioned metal wire support part is arranged on the upper side of the aforementioned metal wire of the aforementioned metal wire saw part. Either or both of the lower side.

根據第十二發明的半導體結晶晶圓的製造裝置，只要支持金屬線之棒體的配置為金屬線與晶錠之接觸部的兩端位置，無論位在金屬線的上側或下側之任何處，皆使金屬線矯正為接近水平的狀態，可防止金屬線在接觸部變得彎曲。 According to the semiconductor crystal wafer manufacturing apparatus of the twelfth invention, as long as the rod body supporting the metal wire is arranged at both ends of the contact portion between the metal wire and the crystal ingot, no matter where it is located on the upper side or the lower side of the metal wire , both correct the metal wire to a nearly horizontal state, which can prevent the metal wire from becoming bent at the contact part.

如上述，根據第十二發明的半導體結晶晶圓的製造裝置，可實現簡單並且確實地穩定地製造高品質的半導體結晶晶圓。 As described above, according to the semiconductor crystal wafer manufacturing apparatus of the twelfth invention, it is possible to realize simple, reliable and stable manufacture of high-quality semiconductor crystal wafers.

1:Si結晶(半導體結晶) 1: Si crystal (semiconductor crystal)

10:Si晶錠(半導體結晶晶錠) 10: Si ingot (semiconductor crystal ingot)

11:凹溝 11: Groove

20:溝加工滾筒研磨石 20: Groove processing roller grinding stone

21:凸部 21: convex part

30:金屬線鋸部(金屬線鋸裝置) 30: Metal wire saw department (metal wire saw device)

31:金屬線 31: metal wire

32:金屬線鋸筒管 32: metal wire saw barrel

35:切片用基座 35: Base for slicing

40,40':金屬線支持部(金屬線鋸裝置) 40,40 ' : Wire support part (wire saw device)

41,41':棒體 41,41 ' : rod body

42:軸承 42: Bearing

42':臂件 42 ' : arm piece

43':導引承座(凸部) 43 ' : guide seat (convex part)

44':夾持板 44 ' : clamping plate

45':導引部(溝部) 45 ' : Guide part (groove part)

46':旋轉盤 46 ' : Rotating Disc

46A':控制軸 46A ' : Control axis

46B':導管 46B ' : Conduit

46C':螺絲 46C ' : screw

47':框架 47 ' : frame

50:機械拋光裝置(超高合成高精度研磨加工裝置) 50: Mechanical polishing device (ultra-high synthetic high-precision grinding device)

51:主軸 51:Spindle

52:壓盤 52: pressure plate

53:金剛石研磨石 53: Diamond grinding stone

54:真空多孔狀夾盤(吸附板) 54: Vacuum porous chuck (adsorption plate)

100:Si晶圓(半導體結晶晶圓) 100: Si wafer (semiconductor crystal wafer)

110:一面 110: one side

120:另一面 120: The other side

STEP100:溝加工程序 STEP100: Groove processing program

STEP110:截斷程序 STEP110: Truncation program

STEP120:第一面加工程序 STEP120: The first surface processing program

STEP130:第二面加工程序 STEP130: second surface processing program

圖1係顯示本實施型態之Si晶圓(半導體結晶晶圓)的製造方法的整體程序的流程圖。 FIG. 1 is a flow chart showing the overall procedure of the method for manufacturing Si wafers (semiconductor crystal wafers) of this embodiment.

圖2係顯示圖1之Si晶圓的製造方法中的溝加工程序之內容的說明圖。 FIG. 2 is an explanatory view showing the contents of a trench processing procedure in the method of manufacturing the Si wafer shown in FIG. 1 .

圖3係顯示圖1之Si晶圓的製造方法中的截斷程序之內容的說明圖。 FIG. 3 is an explanatory view showing the content of a cutting process in the method of manufacturing the Si wafer shown in FIG. 1 .

圖4係顯示圖3之截斷程序之內容的說明圖。 FIG. 4 is an explanatory diagram showing the contents of the truncation program of FIG. 3 .

圖5係顯示圖1之Si晶圓的製造方法中的第一面加工程序及第二面加工程序之內容的說明圖。 FIG. 5 is an explanatory view showing the contents of a first surface processing program and a second surface processing program in the method of manufacturing the Si wafer shown in FIG. 1 .

圖6係顯示截斷程序之其他態樣的說明圖。 Fig. 6 is an explanatory diagram showing another aspect of the truncation procedure.

圖7係顯示圖6之截斷程序之內容的說明圖。 FIG. 7 is an explanatory diagram showing the contents of the truncation program of FIG. 6 .

如圖1所示，在本實施型態中，作為半導體結晶晶圓之Si晶圓的製造方法係從被研磨加工成圓筒形狀的Si晶錠以單片狀方式裁切出晶圓並對該晶圓的一面施予起伏除去而獲得Si晶圓的方法，該製造方法係具備：溝加工程序(STEP100/圖1)、截斷程序(STEP110/圖1)、第一面加工程序(STEP120/圖1)以及第二面加工程序(STEP130/圖1)。 As shown in FIG. 1 , in this embodiment, the method of manufacturing Si wafers as semiconductor crystal wafers is to cut out the wafers in a single sheet form from an Si ingot that has been ground into a cylindrical shape, and One side of the wafer is given a method of removing undulations to obtain a Si wafer. The manufacturing method is provided with: a groove processing program (STEP100/ FIG. 1), a truncation program (STEP110/ FIG. Figure 1) and the second surface processing program (STEP130/Figure 1).

參照圖2~圖5針對各程序的詳細情況及在各程序所使用的裝置加以說明。 The details of each program and the devices used in each program will be described with reference to FIGS. 2 to 5 .

首先，在圖2所示之STEP100的溝加工程序中，準備圓筒形狀的Si晶錠10，該Si晶錠10係在晶錠加工程序中對經預先結晶的Si結晶，確定結晶方位並施予圓筒研磨加工而獲得者。 First, in the groove processing procedure of STEP 100 shown in FIG. 2 , a cylindrical Si ingot 10 is prepared. The Si crystal ingot 10 is pre-crystallized in the ingot processing procedure. Obtained by cylindrical grinding.

並且，在STEP100的溝加工程序中，對上述的Si晶錠10，形成環繞側面整體的複數個凹溝11。 Then, in the groove processing program of STEP 100, a plurality of concave grooves 11 surrounding the entire side surface are formed on the above-mentioned Si ingot 10 .

具體而言，在STEP100的溝加工程序中，使於側面形成有與凹溝11相對應之凸部21的溝加工滾筒研磨石20在互相平行的旋轉軸上各自一邊旋轉一邊對Si晶錠10進行壓接，藉此形成凹溝11。 Specifically, in the groove processing program of STEP 100, the groove processing roller grindstones 20 having the convex portions 21 formed on the side surfaces corresponding to the concave grooves 11 are rotated on the rotation axes parallel to each other while facing the Si ingot 10. The crimping is performed, whereby the groove 11 is formed.

另外，藉由化學處理的手段對由溝加工程序所獲得之Si晶錠(特別是凹溝11)施予無損傷的鏡面加工為佳。 In addition, it is preferable to apply non-damaging mirror processing to the Si crystal ingot (especially the groove 11 ) obtained by the groove processing process by means of chemical treatment.

接著，在圖3所示之STEP110的截斷程序中，藉由配置於在溝加工程序中所形成之複數個凹溝11的複數條金屬線31將Si晶錠10予以截斷成單片狀而獲得Si晶圓100。 Next, in the cutting process of STEP 110 shown in FIG. 3 , the Si crystal ingot 10 is cut into a single piece by a plurality of metal wires 31 arranged in the plurality of concave grooves 11 formed in the groove processing process. Si wafer 100.

具體而言，在截斷程序中，作為截斷加工裝置的金屬線鋸裝置係將金屬線鋸部30使複數條金屬線31分別與在溝加工程序所形成的複數個凹溝11對齊，並使金屬線31一邊繞行一邊前進，藉此將Si晶錠10截斷成單片狀。 Specifically, in the cutting procedure, the wire saw device as a cutting processing device aligns the plurality of metal wires 31 with the plurality of concave grooves 11 formed in the groove processing procedure, and aligns the metal wire saw part 30 with the plurality of metal wires 31 respectively. The wire 31 advances while going round, thereby cutting the Si ingot 10 into individual pieces.

另外，在使金屬線31繞行的金屬線鋸筒管32的側面整體形成有與複數個凸部21相對應的複數個凹型的筒管溝。而且，Si晶錠10係經由接著劑等嵌入而固定在供Si晶錠10嵌入之切片用基座(虛設板)35。 In addition, a plurality of concave bobbin grooves corresponding to the plurality of protrusions 21 are formed on the entire side surface of the wire saw bobbin 32 through which the wire 31 is routed. And, the Si ingot 10 is embedded and fixed on the susceptor (dummy plate) 35 for slicing in which the Si ingot 10 is embedded via an adhesive agent etc. being embedded.

此時，金屬線鋸裝置所具備的金屬線支持部40係在金屬線31與Si晶錠10之接觸部的兩端在行進方向上支持金屬線31。 At this time, the wire support unit 40 included in the wire saw device supports the wire 31 in the traveling direction at both ends of the contact portion between the wire 31 and the Si ingot 10 .

更具體而言，金屬線支持部40為與Si晶錠10的軸線方向呈平行地配置的圓筒形狀的一對棒體41、41，棒體41的兩端係設置有棒體41的軸承42、42(例如，滾珠軸承等)。藉由軸承42、42，使棒體41構成為在無負荷狀態下旋轉自如。 More specifically, the wire supporting part 40 is a pair of cylindrical rods 41 and 41 arranged parallel to the axial direction of the Si ingot 10, and the two ends of the rod 41 are provided with bearings for the rod 41. 42, 42 (eg, ball bearings, etc.). With the bearings 42, 42, the rod body 41 is configured to be rotatable in a no-load state.

而且，在棒體41的整體側面形成有凹型的支持溝，該凹型的支持溝係與溝加工滾筒研磨石20之複數個凸部21相對應。 Moreover, concave support grooves are formed on the entire side surface of the rod body 41 , and the concave support grooves correspond to the plurality of convex portions 21 of the groove processing drum grinding stone 20 .

在此，金屬線鋸部30的金屬線鋸筒管32、及金屬線支持部40的棒體41係各自藉由省略圖示的框架及框架動作手段所支持，並如以下方式使金屬線31(金屬線鋸筒管32)、及金屬線支持部40動作行進。 Here, the wire saw barrel 32 of the wire saw part 30 and the rod body 41 of the wire support part 40 are respectively supported by a frame (not shown) and a frame action means, and the wire 31 is moved as follows. (The wire saw barrel 32 ) and the wire support part 40 move forward.

首先，以使金屬線31的行進方向位移量與金屬線支持部40的行進方向位移量連動的方式，使金屬線支持部40(棒體41)行進。藉此，維持在行進方向中的金屬線31與金屬線支持部40(棒體41)的位置關係。 First, the wire supporting part 40 (rod body 41 ) is advanced such that the amount of displacement in the advancing direction of the wire 31 is linked to the amount of displacement in the advancing direction of the wire supporting part 40 . Thereby, the positional relationship of the wire 31 and the wire support part 40 (rod body 41) in a traveling direction is maintained.

再者，如圖4所示，金屬線支持部40係沿著Si晶錠10的側面外形而行進。 Furthermore, as shown in FIG. 4 , the wire supporting portion 40 runs along the side profile of the Si ingot 10 .

另外，金屬線鋸筒管32及金屬線支持部40的行進動作亦可構成為：預先根據Si晶錠10藉由教導使之記憶保持在框架動作手段，而從與Si晶錠10的規格尺寸相對應的動作資料表格選擇動作行進並讀出動作資料。 In addition, the advancing action of the metal wire saw barrel 32 and the wire supporting part 40 can also be configured as follows: according to the Si crystal ingot 10 in advance, it is taught to make it memorized and held in the frame action means, and from the specification size of the Si crystal ingot 10 The corresponding action data table selects the action to advance and reads out the action data.

如以上方式，根據除金屬線鋸部30之外還構成有金屬線支持部40的金屬線鋸裝置，可以藉由棒體41同時地在同一位置支持複數條金屬線31。 As described above, according to the wire saw device including the wire support portion 40 in addition to the wire saw portion 30 , a plurality of wires 31 can be simultaneously supported at the same position by the rod body 41 .

而且，棒體41係構成為經由軸承42而在無負荷的狀態下可進行旋轉，藉此可一邊使金屬線31的繞行速度維持一邊確實地支持金屬線31。除此之外，還可防止金屬線31對棒體41的刮削。 Furthermore, the rod body 41 is configured to be rotatable in a no-load state via the bearing 42 , thereby enabling the wire 31 to be reliably supported while maintaining the speed of the wire 31 . In addition, scraping of the rod body 41 by the metal wire 31 can also be prevented.

再者，棒體41係於側面整體形成與Si晶錠10之凹溝11相同的支持溝，且亦在金屬線鋸筒管32形成有與凹溝11相同的筒管溝。因此，可藉由筒管溝使繞行的金屬線31確實地定位在凹溝11，除此之外還可藉由支持溝使金屬線31在截斷時不會橫向移動而確實地支持。 Furthermore, the rod body 41 forms the same supporting groove as the concave groove 11 of the Si ingot 10 on the side as a whole, and also forms the same bobbin groove as the concave groove 11 on the metal wire saw bobbin 32 . Therefore, the metal wire 31 can be reliably positioned in the concave groove 11 by the bobbin groove, and the metal wire 31 can be reliably supported by the support groove so that the metal wire 31 does not move laterally during cutting.

除上述之外，在使金屬線支持部40與金屬線鋸部30的金屬線31的行進方向的位移連動的同時，使金屬線支持部40沿著Si晶錠10的側面外形行進，藉此可使金屬線支持部始終定位於金屬線與Si晶錠10的接觸部的兩端。 In addition to the above, the wire support part 40 is made to run along the side profile of the Si ingot 10 while being linked to the displacement of the wire saw part 30 in the direction of travel of the wire 31 , thereby It is possible to always position the wire support portions at both ends of the contact portion of the wire with the Si ingot 10 .

另外，即使金屬線31及金屬線支持部40最後沿著切片用基座35行進，而截斷Si晶錠10，金屬線31仍然會殘留在切片用基座，藉此可防止Si晶錠10的截斷結束部位的剝落等。 In addition, even if the metal wire 31 and the metal wire supporting portion 40 travel along the slicing base 35 at the end and cut the Si crystal ingot 10, the metal wire 31 will still remain on the slicing base, thereby preventing the Si crystal ingot 10 from being broken. Peeling at the end of the cutting, etc.

因此，金屬線31係藉由金屬線支持部40而始終支持與Si晶錠10之接觸部的兩端，所以可防止金屬線31在接觸部變得彎曲，並維持接近水平的狀態。 Therefore, the metal wire 31 is always supported by the wire supporting portion 40 at both ends of the contact portion with the Si ingot 10 , so that the metal wire 31 can be prevented from being bent at the contact portion and can maintain a nearly horizontal state.

甚至，防止在截斷時金屬線變彎曲而使截斷應力偏靠兩端部側，並可實現無起伏、條紋的截斷面。 Furthermore, it is possible to prevent the metal wire from being bent at the time of cutting so that the cutting stress is not shifted to the both ends, and to realize a cut surface free from undulations and streaks.

如此，可精確地利用正確地配置在複數個凹溝11的複數條金屬線31，一次將Si晶錠10精確地截斷成單片狀，而無需再次進行修邊程序。 In this way, the Si crystal ingot 10 can be accurately cut into single pieces at one time by using the plurality of metal wires 31 correctly arranged in the plurality of grooves 11 without performing the trimming procedure again.

接著，如圖5所示，在STEP120的第一面加工程序中，將截斷面之中的任意一方的一面110設為支持面，而對剩餘的另一面120施予機械拋光(高精度研磨加工)。 Then, as shown in FIG. 5, in the first surface processing program of STEP120, one side 110 of any one of the truncated surfaces is set as a support surface, and mechanical polishing (high-precision grinding) is applied to the remaining other surface 120. ).

具體而言，在第一面加工程序中，藉由施予機械拋光的機械拋光裝置50(超高合成高精度研磨加工裝置)進行研磨加工。 Specifically, in the first surface processing procedure, grinding is performed by a mechanical polishing device 50 (ultra-high synthetic high-precision grinding device) that applies mechanical polishing.

機械拋光裝置50係具備：主軸51、以及作為平台之壓盤(platen)52上的金剛石研磨石53。 The mechanical polishing device 50 includes a spindle 51 and a diamond grinding stone 53 on a platen 52 as a platform.

首先，在此將一面110設為上表面，並使之被吸附於支持在屬於主軸51之吸附板的真空多孔狀夾盤54，並且將另一面120設為下表面，並藉由金剛石研磨石53對另一面120進行研磨加工。 First, here, one side 110 is set as the upper surface, and it is adsorbed on the vacuum porous chuck 54 supported on the adsorption plate belonging to the main shaft 51, and the other side 120 is set as the lower surface, and the diamond grinding stone 53 grinds the other surface 120 .

此時，主軸51及金剛石研磨石53係藉由省略圖示的驅動裝置而旋轉驅動，並且藉由省略圖示的壓縮器(compressor)等將主軸51按壓於金剛石研磨石53，藉此對剩餘的另一面120施予研磨加工。 At this time, the main shaft 51 and the diamond grinding stone 53 are rotationally driven by an unillustrated driving device, and the main shaft 51 is pressed against the diamond grinding stone 53 by an unillustrated compressor (compressor) or the like, whereby the remaining The other side 120 is subjected to grinding.

另外，亦可在研磨加工後，藉由修整器(dresser)等來施予對於金剛石研磨石53的修整。 In addition, dressing of the diamond grinding stone 53 may be given by a dresser or the like after the grinding process.

而且，機械拋光裝置50亦可因應需求具有機能水供給配管，而可在加工時使用複數種機能水。 In addition, the mechanical polishing device 50 may have functional water supply pipes as required, and multiple types of functional water may be used during processing.

接著，在STEP130的第二面加工程序中，將藉由第一面加工程序而施予高精度研磨加工的另一面120設為上表面，而對於一面110施予與第一面加工程序相同的高精度研磨加工。 Next, in the second surface processing procedure of STEP 130, the other surface 120 subjected to high-precision grinding by the first surface processing procedure is set as the upper surface, and the same surface processing procedure as the first surface processing procedure is applied to one surface 110. High-precision grinding processing.

亦即，將另一面120設為上表面，並使之被吸附在屬於主軸51之吸附板的真空多孔狀夾盤54，並且將一面110設為下表面，並藉由金剛石研磨石53對一面110進行研磨加工。 That is, the other side 120 is set as the upper surface, and it is adsorbed on the vacuum porous chuck 54 belonging to the adsorption plate of the main shaft 51, and the one side 110 is set as the lower surface, and is opposed to the other side by the diamond grinding stone 53. 110 performs grinding processing.

該情形下，亦可因應需求，將修整器等對金剛石研磨石53進行按壓，藉此施予整修。 In this case, dressing may be performed by pressing a dresser or the like against the diamond grindstone 53 as required.

根據上述之STEP120的第一面加工程序及STEP130的第二面加工程序的機械拋光(高精度研磨加工)處理，將藉由截斷程序所獲得之具有較高平坦性的截斷面之中的任意一方設為支持面(吸附面)，而對剩餘面依序施予機械拋光(高精度研磨加工)，藉此可防止所謂的轉移而獲得高品質的Si晶圓，並且大幅度地將以往的游離研磨石加工(亦即，一次至四次的複數次的拋光)等複雜的製造程序予以簡略化。 According to the above-mentioned mechanical polishing (high-precision grinding) treatment of the first surface processing program of STEP120 and the second surface processing program of STEP130, any one of the sectional surfaces with higher flatness obtained by the sectional process Set it as a support surface (adsorption surface), and sequentially apply mechanical polishing (high-precision polishing) to the remaining surfaces, thereby preventing so-called transfer and obtaining high-quality Si wafers, and greatly reducing the conventional free Complicated manufacturing procedures such as grinding stone processing (that is, multiple times of polishing from one to four times) are simplified.

更具體而言，無須更換研磨石而進行粗研磨及複數次的精研磨，例如藉由#30000以上的研磨石就可直接由一次的研磨加工而達精加工，因此不僅簡單，而且還具有可大量確保可從Si晶圓100獲取的本質半導體層的優越性。 More specifically, there is no need to replace the grinding stone to carry out rough grinding and multiple times of fine grinding. For example, with a grinding stone above #30000, it can be directly processed from one grinding to finishing. Therefore, it is not only simple, but also has the potential The superiority of the intrinsic semiconducting layer obtainable from the Si wafer 100 is largely ensured.

另外，在STEP120的第一面加工程序及STEP130的第二面加工程序之高精度研磨加工處理中，Si晶圓100的大小目前達8吋，各種直徑的晶圓均根據研磨頭的面積而設定(可達12吋)，以進行高精度研磨加工處理。 In addition, in the high-precision grinding process of the first surface processing program of STEP120 and the second surface processing program of STEP130, the size of the Si wafer 100 currently reaches 8 inches, and wafers of various diameters are set according to the area of the grinding head (up to 12 inches) for high-precision grinding.

以上為本實施型態之Si晶圓的製造方法的詳細情況。以上，如詳細說明方式，根據上述之本實施型態的Si晶圓的製造方法，可簡單並確實地製造高品質的Si晶圓。 The above are the details of the method for manufacturing the Si wafer of the present embodiment. As mentioned above, as described in detail, according to the above-mentioned Si wafer manufacturing method of this embodiment, a high-quality Si wafer can be manufactured easily and reliably.

接著，參照圖6及圖7，說明STEP110之截斷程序的其他態樣。 Next, other aspects of the truncation routine of STEP 110 will be described with reference to FIGS. 6 and 7 .

具體而言，金屬線支持部40'係具備：一對棒體41'、41'、臂件42'、導引承座43'、夾持板44'、導引部45'、及旋轉盤46'。 Specifically, the metal wire supporting part 40 ' is provided with: a pair of rods 41 ' , 41 ' , an arm 42 ' , a guide seat 43 ' , a clamping plate 44 ' , a guide part 45 ' , and a rotating disk 46 ' .

棒體41'為以與Si晶錠10之軸線方向呈平行方式配置之圓筒形狀的棒體，並且棒體41'的兩端藉由臂件42'軸接。另外，在棒體41'與臂件42'之間設置滾珠軸承等軸承，藉此使棒體41'構成為在無負荷的狀態下旋轉自如為佳。 The rod body 41 ′ is a cylindrical rod body arranged parallel to the axial direction of the Si crystal ingot 10, and the two ends of the rod body 41 ′ are pivotally connected by an arm 42 ′ . In addition, it is preferable that a bearing such as a ball bearing is provided between the rod body 41 ' and the arm member 42 ' so that the rod body 41 ' is configured to be rotatable in a no-load state.

而且，棒體41'的兩端設置有圓盤狀的導引承座43'，且構成為使棒體41'貫通導引承座43'。在此，在導引承座43'與棒體41'之間，亦設置滾珠軸承等之軸承，藉此使棒體41'構成為在無負荷的狀態下旋轉自如為佳。 Moreover, disc-shaped guide seats 43 ′ are provided at both ends of the rod body 41 ′ , and the rod body 41 ′ is configured to pass through the guide seat 43 ′ . Here, bearings such as ball bearings are also provided between the guide seat 43 ' and the rod body 41 ' , so that the rod body 41 ' is preferably configured to be rotatable in a no-load state.

夾持板44'為與Si晶錠10之兩端面相對應的圓形之板並夾持該兩端面。導引部45'係形成於夾持板44'的外周，且與棒體41'的導引承座43'抵接，藉此經由導引承座43'來輔助棒體41'沿著夾持板44'的外周行進。 The clamping plate 44 ' is a circular plate corresponding to both end surfaces of the Si crystal ingot 10, and clamps the two end surfaces. The guide portion 45 ' is formed on the outer periphery of the clamping plate 44 ' and abuts against the guide seat 43 ' of the rod body 41', thereby assisting the rod body 41 ' along the clip through the guide seat 43 ' . The outer circumference of the holding plate 44 ' travels.

在此，在導引部45'及導引承座43'(相當於本發明的行進控制部)於一方設置溝部而於另一方設置凸部為佳，以使周方向的行進確實進行。在本實施型態中，於導引部45'(夾持板44'的側面)設置溝部，並且於導引承座43'設置用以在外周運行的凸部。 Here, it is preferable to provide a groove portion on one side and a convex portion on the other side in the guide portion 45 ′ and the guide seat 43 ′ (corresponding to the travel control portion of the present invention), so that the travel in the circumferential direction can be reliably performed. In this embodiment, a groove is provided on the guide part 45 ' (the side of the clamping plate 44 ' ), and a convex part for running on the outer periphery is provided on the guide seat 43 ' .

旋轉盤46'(相當於本發明的行進控制部)為可調整旋轉扭矩的旋轉控制機器，並控制臂件42'的旋轉。也就是，使棒體41'沿著導引部45'而依圓形地行進時，棒體41'的旋轉中心軸係與旋轉盤46'的控制軸46A'連結。 The rotating disk 46 ' (equivalent to the travel control part of the present invention) is a rotation control machine capable of adjusting the rotation torque, and controls the rotation of the arm member 42 ' . That is, when the rod body 41 ' travels circularly along the guide part 45 ' , the rotation center shaft system of the rod body 41 ' is connected to the control shaft 46A ' of the rotating disk 46' .

本實施型態的旋轉盤46'中，藉由兩條導管46B'、46B'的空氣壓(空氣的流出流入)可以調整旋轉轉矩。 In the rotary disk 46 ' of this embodiment, the rotational torque can be adjusted by the air pressure (inflow and outflow of air) of the two conduits 46B ' and 46B ' .

而且，旋轉盤46'係藉由貫通框架47'的螺絲46C'螺固而與框架形成為一體(參照圖7)。 Moreover, the rotating disk 46 ' is integrally formed with the frame by screwing the screw 46C ' penetrating the frame 47 ' (refer to FIG. 7).

另外，在本實施型態中，一對棒體41'、41'係設置於金屬線31的上側，在藉由經由金屬線鋸筒管32繞行的複數條金屬線31截斷Si晶錠10時，一對棒體41'、41'從上側抵接支持金屬線31之與Si晶錠10的接觸部的兩端，防止金屬線31捲繞於Si晶錠10而使金屬線31在接觸部變彎曲，並維持接近水平的狀態。 In addition, in this embodiment, a pair of rods 41 ′ , 41 ′ are arranged on the upper side of the metal wire 31, and the Si crystal ingot 10 is cut by a plurality of metal wires 31 passing through the metal wire saw barrel 32. , a pair of rods 41 ′ , 41 ′ contact the two ends of the contact portion of the supporting metal wire 31 with the Si crystal ingot 10 from the upper side, preventing the metal wire 31 from being wound around the Si crystal ingot 10 so that the metal wire 31 is in contact with the Si crystal ingot 10. The portion becomes curved and remains nearly horizontal.

此時，旋轉盤46'係與金屬線鋸裝置30的行進(往圖面上方的行進(截斷速度))相對應，對兩條導管46B'、46B'調整空氣壓，使控制軸46A'旋轉，經由臂件42'使棒體41'繞著夾持板44'的外周而行進。 At this time, the rotating disk 46 ' corresponds to the travel of the wire saw device 30 (the travel to the top of the drawing (cutting speed)), and the air pressure is adjusted to the two conduits 46B ' and 46B ' to rotate the control shaft 46A ' , the rod 41 ' travels around the outer circumference of the clamping plate 44 ' via the arm 42 ' .

藉此，可使棒體41'的位置與金屬線31連動並正確地進行控制，並可使棒體41'以固定的負載按壓金屬線31。 Thereby, the position of the rod 41 ' can be accurately controlled in conjunction with the wire 31, and the rod 41 ' can be pressed against the wire 31 with a constant load.

另外，旋轉盤46'亦可(取代主動性地使控制軸46A'旋轉)依據來自金屬線31的一定的負載(當超過負載預定值時)而使棒體行進。藉此，可使棒體以固定的負載按壓金屬線，亦可使金屬線與棒體的行進連動。 In addition, the rotating disc 46 ' can also (instead of actively rotating the control shaft 46A ' ) make the rod travel according to a certain load from the wire 31 (when the load exceeds a predetermined value). Thereby, the rod can be pressed against the metal wire with a fixed load, and the metal wire and the travel of the rod can be interlocked.

另外，一對棒體41'、41'亦可取代設置於金屬線31的上側，而配置於金屬線31的下側，而藉由棒體41'來從下方支持金屬線31，而控制金屬線31之往下側的鬆弛。 In addition, a pair of rods 41 ′ , 41 ′ can also be arranged on the lower side of the metal wire 31 instead of being arranged on the upper side of the metal wire 31, and the metal wire 31 is supported by the rod 41 ′ from below to control the metal wire 31. Slack on the lower side of the thread 31.

再者，除本實施型態的一對棒體41'、41'(金屬線31的上側配置)之外，還可使臂件42'延伸，並於延伸的臂件的前端另外設置一組的棒體(金屬線31的下側配置)，而從上側及下側來抵接支持金屬線31之與Si晶錠10的接觸部的兩端。 Furthermore, in addition to the pair of rods 41 ' , 41 ' (disposed on the upper side of the metal wire 31) of this embodiment, the arm 42 ' can also be extended, and an additional set can be set at the front end of the extended arm. (arranged below the metal wire 31 ), and the two ends of the contact portion of the supporting metal wire 31 and the Si ingot 10 are abutted from the upper side and the lower side.

而且，在本實施型態中，在棒體41'的側面整體形成有與溝加工滾筒研磨石20之複數個凸部21相對應的凹型的支持溝為佳。 Moreover, in this embodiment, it is preferable to form concave support grooves corresponding to the plurality of convex portions 21 of the groove processing drum grinding stone 20 on the side surface of the rod body 41 ′ as a whole.

根據如上述方式所構成的金屬線支持部40，如圖7所示方式，沿著Si晶錠10的側面外形而行進。具體而言，在圖7中按時順序從左開始顯示截斷開始時、截斷初期、截斷結束。 According to the wire support part 40 comprised as mentioned above, as shown in FIG. 7, it runs along the side profile of the Si ingot 10. As shown in FIG. Specifically, in FIG. 7 , the start of clipping, the initial stage of clipping, and the end of clipping are displayed in chronological order from the left.

另外，在以上說明的該等實施型態的Si晶圓的製造方法中，亦可在上述之一連串的處理之後，因應需求而進行化學機械研磨(CMP)程序或晶圓洗淨程序。 In addition, in the Si wafer manufacturing methods of the embodiments described above, a chemical mechanical polishing (CMP) process or a wafer cleaning process may be performed as required after the above-mentioned series of treatments.

此外，本實施型態係就半導體結晶晶圓的製造方法，從Si晶錠製造Si晶圓的情形加以說明，惟半導體結晶並不限定於Si，半導體結晶例如亦可為碳化矽(SiC)、砷化鎵、磷化銦或其他化合物半導體。 In addition, this embodiment describes the manufacturing method of semiconductor crystal wafers and the situation of manufacturing Si wafers from Si crystal ingots. However, semiconductor crystals are not limited to Si. Semiconductor crystals can also be, for example, silicon carbide (SiC), Gallium arsenide, indium phosphide or other compound semiconductors.

STEP100:溝加工程序 STEP100: Groove processing program

STEP110:截斷程序 STEP110: Truncation program

STEP120:第一面加工程序 STEP120: The first surface processing program

STEP130:第二面加工程序 STEP130: second surface processing program

Claims (12)

一種半導體結晶晶圓的製造方法，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造方法係具備： A method for manufacturing a semiconductor crystal wafer is to cut out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and the method for manufacturing the semiconductor crystal wafer has: 溝加工程序，係形成環繞於前述半導體結晶晶錠之側面整體的複數個凹溝；以及 The groove processing process is to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot; and 截斷程序，係藉由配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線將前述半導體結晶晶錠予以截斷成單片狀而獲得半導體結晶晶圓； The cutting process is to cut the semiconductor crystal ingot into a single piece by a plurality of metal wires arranged in the plurality of grooves formed in the groove processing process to obtain a semiconductor crystal wafer; 前述截斷程序在使配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線一邊繞行一邊行進而藉此將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠的接觸部的兩端藉由在行進方向上支持該金屬線的金屬線支持部支持該金屬線； In the cutting process, when the plurality of metal wires arranged in the plurality of concave grooves formed in the groove processing step are detoured and run to cut the semiconductor crystal ingot into individual pieces, the metal wires are cut into pieces. Both ends of the contact portion with the semiconductor crystal ingot support the metal wire by a wire support portion supporting the metal wire in a traveling direction; 前述金屬線支持部為與前述半導體結晶晶錠之軸線方向呈平行地配置的圓筒形狀的一對棒體，該一對棒體係於側面整體形成有支持溝，該支持溝係與形成前述複數個凹溝之溝加工滾筒研磨石的複數個凸部相對應。 The above-mentioned metal wire support part is a pair of cylindrical rods arranged parallel to the axial direction of the above-mentioned semiconductor crystal ingot. The pair of rods are integrally formed with supporting grooves on the side surfaces. The plurality of convex portions of the groove processing roller grinding stone correspond to each concave groove. 一種半導體結晶晶圓的製造方法，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造方法係具備： A method for manufacturing a semiconductor crystal wafer is to cut out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and the method for manufacturing the semiconductor crystal wafer has: 溝加工程序，係形成環繞於前述半導體結晶晶錠之側面整體的複數個凹溝；以及 The groove processing process is to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot; and 截斷程序，係藉由配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線將前述半導體結晶晶錠予以截斷成單片狀而獲得半導體結晶晶圓； The cutting process is to cut the semiconductor crystal ingot into a single piece by a plurality of metal wires arranged in the plurality of grooves formed in the groove processing process to obtain a semiconductor crystal wafer; 前述截斷程序在使配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線一邊繞行一邊行進而藉此將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠的接觸部的兩端藉由在行進方向上支持該金屬線的金屬線支持部支持該金屬線； In the cutting process, when the plurality of metal wires arranged in the plurality of concave grooves formed in the groove processing step are detoured and run to cut the semiconductor crystal ingot into individual pieces, the metal wires are cut into pieces. Both ends of the contact portion with the semiconductor crystal ingot support the metal wire by a wire support portion supporting the metal wire in a traveling direction; 前述金屬線支持部係沿著前述半導體結晶晶錠的側面外形而行進。 The above-mentioned metal wire supporting part runs along the side profile of the above-mentioned semiconductor crystal ingot. 一種半導體結晶晶圓的製造方法，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造方法係具備： A method for manufacturing a semiconductor crystal wafer is to cut out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and the method for manufacturing the semiconductor crystal wafer has: 溝加工程序，係形成環繞於前述半導體結晶晶錠之側面整體的複數個凹溝；以及 The groove processing process is to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot; and 截斷程序，係藉由配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線將前述半導體結晶晶錠予以截斷成單片狀而獲得半導體結晶晶圓； The cutting process is to cut the semiconductor crystal ingot into a single piece by a plurality of metal wires arranged in the plurality of grooves formed in the groove processing process to obtain a semiconductor crystal wafer; 前述截斷程序在使配置於在前述溝加工程序中所形成之複數個凹溝的複數條金屬線一邊繞行一邊行進而藉此將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠的接觸部的兩端藉由在行進方向上支持該金屬線的金屬線支持部支持該金屬線； In the cutting process, when the plurality of metal wires arranged in the plurality of grooves formed in the groove processing step are detoured and run to cut the semiconductor crystal ingot into individual pieces, the metal wires are cut into pieces. Both ends of the contact portion with the semiconductor crystal ingot support the metal wire by a wire support portion supporting the metal wire in a traveling direction; 前述金屬線支持部係與前述金屬線的行進方向的位移連動而行進。 The said wire support part advances in conjunction with the displacement of the said wire in the advancing direction. 一種半導體結晶晶圓的製造方法，係從被研磨加工成筒狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造方法中， A method for manufacturing a semiconductor crystal wafer, which is to cut out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape. In the method for manufacturing the semiconductor crystal wafer, 在藉由複數條金屬線以單片狀方式截斷前述半導體結晶晶錠而獲得半導體結晶晶圓的溝加工程序中， In the groove processing process of obtaining a semiconductor crystal wafer by cutting the aforementioned semiconductor crystal ingot in a monolithic manner by a plurality of metal wires, 在藉由使前述複數條金屬線一邊繞行一邊行進而將前述半導體結晶晶錠截斷成單片狀時，在該金屬線與該半導體結晶晶錠之接觸部的兩端藉由支持該金屬線的金屬線支持部支持該金屬線； When the semiconductor crystal ingot is cut into pieces by running the plurality of metal wires around them, the metal wires are supported at both ends of the contact portion between the metal wires and the semiconductor crystal ingot. the metal wire supporting portion supports the metal wire; 前述金屬線支持部係藉由一對的夾持板、導引部及棒體，使該棒體支持前述金屬線，並且沿著該半導體結晶晶錠的側面外形而行進；其中，該一對的夾持板為具有與前述半導體結晶晶錠之兩端面相對應的形狀的板體並夾持該兩端面；該導引部係形成於該夾持板的外周；該棒體係沿著該導引部而行進。 The metal wire supporting part uses a pair of clamping plates, guide parts and rods, so that the rod supports the metal wires and travels along the side profile of the semiconductor crystal ingot; wherein the pair The clamping plate is a plate with a shape corresponding to the two end faces of the aforementioned semiconductor crystal ingot and clamps the two end faces; the guide is formed on the outer periphery of the clamping plate; the rod system follows the guide Lead the department and move forward. 一種半導體結晶晶圓的製造裝置，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造裝置係具備： A semiconductor crystal wafer manufacturing device, which cuts out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and the semiconductor crystal wafer manufacturing device has: 溝加工滾筒研磨石，係用以形成環繞於前述半導體結晶晶錠之側面整體之複數個凹溝，並於側面形成有與該複數個凹溝相對應的複數個凸部； The groove processing roller grinding stone is used to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot, and a plurality of protrusions corresponding to the plurality of grooves are formed on the side surface; 金屬線鋸部，係使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進而對藉由前述滾筒研磨石形成有環繞側面整體之複數個凹溝的前述半導體結晶晶錠進行截斷；以及 The metal wire saw section cuts the semiconductor crystal ingot having the plurality of grooves surrounding the entire side surface formed by the roller grinding stone by running a plurality of metal wires arranged in a plurality of grooves while going around; as well as 金屬線支持部，係在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端在行進方向上支持該金屬線； The metal wire supporting part supports the metal wire in the direction of travel at both ends of the contact part between the metal wire and the semiconductor crystal ingot of the metal wire saw part; 前述金屬線支持部為與前述半導體結晶晶錠之軸線方向呈平行地配置的圓筒形狀的一對棒體，該一對棒體係於側面整體形成有支持溝，該支持溝係與前述溝加工滾筒研磨石的複數個凸部相對應。 The metal wire supporting part is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot. The pair of rods are integrally formed with supporting grooves on the side surfaces. The supporting grooves are processed with the aforementioned grooves. The plurality of protrusions of the barrel grindstone correspond to each other. 如請求項5所述之半導體結晶晶圓的製造裝置，其中， The manufacturing device for semiconductor crystal wafers according to claim 5, wherein, 前述金屬線支持部係經由軸承，使前述棒體構成為在無負荷狀態下旋轉自如。 The said wire supporting part is configured so that the said rod body can rotate freely in a no-load state via a bearing. 一種半導體結晶晶圓的製造裝置，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造裝置係具備： A semiconductor crystal wafer manufacturing device, which cuts out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and the semiconductor crystal wafer manufacturing device has: 溝加工滾筒研磨石，係用以形成環繞於前述半導體結晶晶錠之側面整體之複數個凹溝，並於側面形成有與該複數個凹溝相對應的複數個凸部； The groove processing roller grinding stone is used to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot, and a plurality of protrusions corresponding to the plurality of grooves are formed on the side surface; 金屬線鋸部，係使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進而對藉由前述滾筒研磨石形成有環繞側面整體之複數個凹溝的前述半導體結晶晶錠進行截斷；以及 The metal wire saw section cuts the semiconductor crystal ingot having the plurality of grooves surrounding the entire side surface formed by the roller grinding stone by running a plurality of metal wires arranged in a plurality of grooves while going around; as well as 金屬線支持部，係在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端在行進方向上支持該金屬線； The metal wire supporting part supports the metal wire in the direction of travel at both ends of the contact part between the metal wire and the semiconductor crystal ingot of the metal wire saw part; 前述金屬線支持部係沿著前述半導體結晶晶錠的側面外形而行進。 The above-mentioned metal wire supporting part runs along the side profile of the above-mentioned semiconductor crystal ingot. 一種半導體結晶晶圓的製造裝置，係從被研磨加工成圓筒形狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造裝置係具備： A semiconductor crystal wafer manufacturing device, which cuts out the wafer in a monolithic manner from a semiconductor crystal ingot that has been ground and processed into a cylindrical shape, and the semiconductor crystal wafer manufacturing device has: 溝加工滾筒研磨石，係用以形成環繞於前述半導體結晶晶錠之側面整體之複數個凹溝，並於側面形成有與該複數個凹溝相對應的複數個凸部； The groove processing roller grinding stone is used to form a plurality of grooves surrounding the entire side of the aforementioned semiconductor crystal ingot, and a plurality of protrusions corresponding to the plurality of grooves are formed on the side surface; 金屬線鋸部，係使配置於複數個凹溝的複數條金屬線一邊繞行一邊行進而對藉由前述滾筒研磨石形成有環繞側面整體之複數個凹溝的前述半導體結晶晶錠進行截斷；以及 The metal wire saw section cuts the semiconductor crystal ingot having the plurality of grooves surrounding the entire side surface formed by the roller grinding stone by running a plurality of metal wires arranged in a plurality of grooves while going around; as well as 金屬線支持部，係在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端在行進方向上支持該金屬線； The metal wire supporting part supports the metal wire in the direction of travel at both ends of the contact part between the metal wire and the semiconductor crystal ingot of the metal wire saw part; 前述金屬線支持部係與前述金屬線鋸部之前述金屬線的行進方向的位移連動而行進。 The wire supporting part advances in conjunction with the displacement of the wire saw part in the advancing direction of the wire. 一種半導體結晶晶圓的製造裝置，係從被研磨加工成筒狀的半導體結晶晶錠以單片狀方式裁切出晶圓，該半導體結晶晶圓的製造裝置係具備： A semiconductor crystal wafer manufacturing device, which cuts out the wafer in a monolithic manner from a semiconductor crystal ingot that is ground and processed into a cylindrical shape, and the semiconductor crystal wafer manufacturing device has: 金屬線鋸部，係使複數條金屬線一邊繞行一邊行進而對前述半導體結晶晶錠進行截斷；以及 The metal wire sawing section cuts the aforementioned semiconductor crystal ingot by running a plurality of metal wires while going around; and 金屬線支持部，在前述金屬線鋸部之前述金屬線與前述半導體結晶晶錠之接觸部的兩端支持該金屬線； a metal wire support portion supporting the metal wire at both ends of the contact portion between the metal wire and the semiconductor crystal ingot of the wire saw portion; 前述金屬線支持部係藉由一對的夾持板、導引部及棒體，使該棒體支持前述金屬線，並且沿著該半導體結晶晶錠的側面外形而行進；其中，該一對的夾持板為具有與前述半導體結晶晶錠之兩端面相對應的形狀的板體並夾持該兩端面；該導引部係形成於該夾持板的外周；該棒體係沿著該導引部而行進。 The metal wire supporting part uses a pair of clamping plates, guide parts and rods, so that the rod supports the metal wires and travels along the side profile of the semiconductor crystal ingot; wherein the pair The clamping plate is a plate with a shape corresponding to the two end faces of the aforementioned semiconductor crystal ingot and clamps the two end faces; the guide is formed on the outer periphery of the clamping plate; the rod system follows the guide Lead the department and move forward. 如請求項9所述之半導體結晶晶圓的製造裝置，其中 The manufacturing device for semiconductor crystal wafers as described in Claim 9, wherein 前述金屬線支持部係具有行進控制部，該行進控制部係以與前記金屬線鋸部之前述金屬線的行進連動的方式使前述棒體行進。 The said wire support part has a travel control part which advances the said bar body so that it may advance in conjunction with the travel|movement of the said wire of the above-mentioned wire saw part. 如請求項10所述之半導體結晶晶圓的製造裝置，其中， The manufacturing device for semiconductor crystal wafers according to claim 10, wherein, 前述半導體結晶晶錠係被研磨加工成圓筒形狀； The aforementioned semiconductor crystal ingot is ground into a cylindrical shape; 前述金屬線支持部的前述夾持板為圓形的板體； The aforementioned clamping plate of the aforementioned metal wire supporting part is a circular plate body; 前述金屬線支持部的前述行進控制部為旋轉盤，該旋轉盤係設置於前述棒體沿著前述導引部而圓形地行進的旋轉中心，且可調整旋轉扭矩。 The travel control part of the wire support part is a rotary disk, which is installed at the center of rotation where the rod body travels circularly along the guide part, and the rotation torque can be adjusted. 如請求項9至11中任一項所述之半導體結晶晶圓的製造裝置，其中，前述金屬線支持部的前記棒體係設置於前記金屬線鋸部之前述金屬線的上側與下側之中的任一方或者兩方。 The semiconductor crystal wafer manufacturing device according to any one of Claims 9 to 11, wherein the front bar system of the aforementioned metal wire support part is arranged among the upper side and the lower side of the aforementioned metal wire of the aforementioned metal wire saw part either or both parties.
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