JP7243996B1 - Semiconductor crystal wafer manufacturing apparatus and manufacturing method - Google Patents

Abstract

A semiconductor crystal wafer manufacturing apparatus and method for manufacturing high-quality semiconductor crystal wafers simply and reliably are provided. A method for manufacturing a SiC wafer, which is a semiconductor crystal wafer, includes a groove processing step, a polishing step, a cutting step, a first surface processing step, and a second surface processing step. In the cutting step, the wire saw device 4 advances the plurality of wires 42 arranged in the plurality of recessed grooves 11 while circulating them to cut the SiC ingot 10 into slices. means 43, and an imaging means 44 provided at a position facing each other via a plurality of wires on the distal end side of the electric slider 47 and imaging a plurality of wires arranged in a plurality of concave grooves. From the captured image, the deviation angles of the plurality of wires with respect to the plurality of concave grooves are detected, and the deviation angles are adjusted to zero. [Selection drawing] Fig. 4

Description

The present invention relates to a semiconductor crystal wafer manufacturing apparatus and method for cutting wafers into slices from a cylindrically ground semiconductor crystal ingot.

Conventionally, as a method for manufacturing a SiC wafer, which is a semiconductor crystal wafer of this type, as a wafer shape forming step, a mass of crystal-grown single-crystal SiC is processed into a columnar ingot, as shown in Patent Document 1 below. An ingot forming process, a crystal orientation forming process of forming a notch in a part of the outer circumference so as to serve as a mark indicating the crystal orientation of the ingot, and slicing the single crystal SiC ingot and processing it into a thin disc-shaped SiC wafer. a slicing step, a flattening step of flattening the SiC wafer using abrasive grains less than the modified Mohs hardness, a stamp forming step of forming a stamp, and a chamfering step of chamfering the outer peripheral portion, and then processing The process-affected layer removal process includes a process-affected layer removal process for removing the process-affected layer introduced into the SiC wafer in the preceding process. Finally, as a mirror polishing process, the mechanical action of the polishing pad and the chemical reaction of the slurry A SiC wafer manufacturing method is known that includes a chemical mechanical polishing (CMP) process in which polishing is performed using a combination of various effects.

JP 2020-15646 A

However, such a conventional SiC wafer manufacturing method involves a large number of manufacturing steps and is complicated, resulting in a complicated apparatus configuration and an increased manufacturing cost.

On the other hand, when the manufacturing process is simplified, it becomes difficult to stably obtain the quality required for the SiC wafer.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor crystal wafer manufacturing apparatus and manufacturing method that can easily and reliably manufacture high-quality semiconductor crystal wafers.

A semiconductor crystal wafer manufacturing apparatus according to a first aspect of the present invention is a semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot ground into a cylindrical shape,
a drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a side surface formed with a plurality of protrusions corresponding to the plurality of grooves;
a wire saw device for cutting the semiconductor crystal ingot into slices by advancing the plurality of wires arranged in the plurality of recessed grooves while rotating them;
In the wire saw device, imaging means for imaging the plurality of wires arranged in the plurality of grooves at a position facing ingot support means for supporting the semiconductor crystal ingot via the plurality of wires ;
a slider that is provided on the distal end side of the wire saw device and that moves the imaging means from the frame of the wire saw device to the position for imaging and that can be retracted and retracted after imaging;
with
It is characterized in that deviation angles of the plurality of wires with respect to the plurality of concave grooves are detected from an image captured by the imaging means.

According to the apparatus for manufacturing a semiconductor crystal wafer of the first aspect of the invention, a plurality of concave grooves are formed around the entire side surface of a semiconductor crystal ingot, and a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface of the semiconductor crystal ingot. It consists of a processing drum grinding wheel and additional members corresponding thereto.

The first additional member is a wire saw device that circulates a plurality of wires arranged in a plurality of concave grooves formed on the entire side surface of the semiconductor crystal ingot.

A second additional member is provided at a position facing an ingot supporting means for supporting a semiconductor crystal ingot via the plurality of wires in the wire saw device, and the plurality of wires arranged in the plurality of concave grooves are arranged in the wire saw device. It is an imaging means for imaging.

In the above configuration, by accurately arranging a plurality of wires in the plurality of grooves formed on the entire side surface of the semiconductor crystal ingot by the grooving drum grinding wheel, the plurality of wires can be used with high accuracy. A semiconductor crystal ingot can be cut into slices.

Here, in order to accurately arrange the plurality of wires in the plurality of grooves, the deviation angle of the direction of movement of the plurality of wires with respect to the direction of movement (longitudinal direction) of the plurality of grooves is detected from the image captured by the imaging means. be.

Therefore, it is possible to accurately grasp the deviation angle, and for example, adjust the support means for the semiconductor crystal ingot or the wire saw bobbin so as to cancel the deviation angle.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the first invention, a semiconductor crystal ingot can be cut into slices with high accuracy, and high-quality semiconductor crystal wafers can be manufactured easily and reliably.

The semiconductor crystal wafer manufacturing apparatus of the second invention is, in the first invention,
The ingot support means has a deviation angle adjusting means for rotating and fixing the semiconductor crystal ingot so that the deviation angle detected by the captured image by the imaging means is zero.

According to the semiconductor crystal wafer manufacturing apparatus of the second aspect of the invention, the semiconductor wafer is rotated around a rotation axis which is constituted by the ingot support means and extends perpendicularly to the cutting surface of the plurality of wires, and the semiconductor wafer is rotated at the position where the deviation angle becomes zero. The deviation angle adjusting means for fixing the crystal ingot can be rotated so as to cancel out the deviation angle to 0 and fix the semiconductor crystal ingot at the fitted position.

As a result, the deviation angle of the direction of travel of the plurality of wires with respect to the direction of travel (longitudinal direction) of the plurality of grooves becomes 0, and the plurality of wires can be accurately arranged in the plurality of grooves.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the second invention, a semiconductor crystal ingot can be actually cut into slices with high accuracy with a simple configuration, and high-quality semiconductor crystal wafers can be easily and reliably produced. can be manufactured to

A method for manufacturing a semiconductor crystal wafer according to a third aspect of the present invention is a method for manufacturing a semiconductor crystal wafer in which wafers are cut into slices from a semiconductor crystal ingot ground into a cylindrical shape,
a grooving step of forming a plurality of grooves extending around the entire side surface of the semiconductor crystal ingot;
a cutting step using a wire saw device for cutting the semiconductor crystal ingot into slices by moving forward while rotating a plurality of wires arranged in the plurality of grooves formed in the groove processing step;
In the grooving step, grooving drum grindstones having side surfaces formed with a plurality of projections corresponding to the plurality of grooves are pressed against the semiconductor crystal ingot while being rotated on rotating shafts parallel to each other. forming a concave groove,
In the cutting step, when cutting the semiconductor crystal ingot into slices by advancing the plurality of wires arranged in the plurality of recessed grooves while rotating them, the slider having the imaging means provided on the tip side is moved to the above-described direction. The plurality of wires arranged in the plurality of recessed grooves are observed by the image pickup device at positions facing ingot support means for supporting the semiconductor crystal ingot via the plurality of wires. capturing an image, detecting deviation angles of the plurality of wires with respect to the plurality of grooves from the captured images, adjusting the deviation angles to be 0 , and retracting the slider after adjusting the deviation angles. characterized by

According to the method for manufacturing a semiconductor crystal wafer of the third aspect of the present invention, the grooving step of forming the grooves corresponding to the plurality of convex portions of the grooving drum on the entire side surface of the semiconductor crystal ingot; a cutting step of cutting the semiconductor crystal ingot into slices by advancing a plurality of wires arranged in the recessed grooves while rotating the wires.

Here, by accurately arranging a plurality of wires in the plurality of grooves formed on the entire side surface of the semiconductor crystal ingot by the grooving drum grinding wheel, the semiconductor crystal can be accurately ground by the plurality of wires. An ingot can be cut into slices.

In order to accurately arrange the plurality of wires in the plurality of grooves, in the wire saw device, the plurality of grooves is provided at a position facing an ingot supporting means for supporting the semiconductor crystal ingot via the plurality of wires. A deviation angle of the direction of movement of the plurality of wires with respect to the direction of movement (longitudinal direction) of the plurality of grooves is detected from the image captured by the imaging means that captures the plurality of wires arranged in the groove.

Therefore, it is possible to accurately grasp the deviation angle, and for example, adjust the support means for the semiconductor crystal ingot or the wire saw bobbin so as to cancel the deviation angle.

As described above, according to the semiconductor crystal wafer manufacturing method of the third aspect of the present invention, a semiconductor crystal ingot can be cut into slices with high accuracy, and high-quality semiconductor crystal wafers can be manufactured easily and reliably.

A method for manufacturing a semiconductor crystal wafer according to a fourth aspect of the invention is characterized in that, in the third aspect of the invention,
In the cutting step, prior to cutting, the semiconductor crystal ingot is fixed by rotating the ingot support means so that the deviation angle detected by the image captured by the imaging means is zero. is executed.

According to the method for manufacturing a semiconductor crystal wafer of the fourth aspect of the invention, prior to cutting, the ingot supporting means is rotated around a rotation axis extending perpendicularly to the cutting plane by the plurality of wires so that the deviation angle becomes zero. The semiconductor crystal ingot can be fixed at the fitted position by rotating so as to cancel the deviation angle to 0 by the deviation angle adjustment step of fixing the semiconductor crystal ingot at the position.

As a result, the deviation angle of the direction of travel of the plurality of wires with respect to the direction of travel (longitudinal direction) of the plurality of grooves becomes 0, and the plurality of wires can be accurately arranged in the plurality of grooves.

As described above, according to the method for manufacturing a semiconductor crystal wafer of the fourth aspect of the invention, a semiconductor crystal ingot can be actually cut into slices with high accuracy with a simple structure, and high-quality semiconductor crystal wafers can be easily and reliably produced. can be manufactured to

4 is a flow chart showing the overall steps of a method for manufacturing a SiC wafer (semiconductor crystal wafer) according to the present embodiment; FIG. 2 is an explanatory view showing the SiC wafer manufacturing apparatus of the present embodiment configured by the groove processing step and the pad groove forming step in the SiC wafer manufacturing method of FIG. 1 ; FIG. 2 is an explanatory diagram showing the details of a groove processing step and a polishing step in the method of manufacturing the SiC wafer of FIG. 1; FIG. 2 is an explanatory diagram showing the content of a cutting step in the method of manufacturing the SiC wafer of FIG. 1; FIG. 2 is an explanatory view showing deviation angle adjustment in a cutting step in the method of manufacturing the SiC wafer of FIG. 1; FIG. 2 is an explanatory diagram showing the contents of a first surface processing step and a second surface processing step in the method of manufacturing the SiC wafer of FIG. 1;

As shown in FIG. 1, in the present embodiment, a method for manufacturing a SiC wafer, which is a semiconductor crystal wafer, is a method for obtaining SiC wafers by slicing a SiC ingot that has been ground into a cylindrical shape. A step (STEP 100/FIG. 1), a polishing step (STEP 110/FIG. 1), a cutting step (STEP 120/FIG. 1), a first surface processing step (STEP 130/FIG. 1), and a second surface processing step (STEP 140/ 1).

Details of each step and the SiC wafer manufacturing apparatus of the present embodiment will be described with reference to FIGS.

Pad grooves are formed in advance using the grooving drum grindstone 20 commonly used in the grooving step (STEP 100/FIG. 1) shown in FIG.

The grooving drum grindstone 20 is a drum grindstone for forming a plurality of grooves 11 around the entire side surface of the SiC ingot 10, and a plurality of protrusions 21 corresponding to the plurality of grooves 11 are formed on the side surface. ing.

First, in the pad groove forming process, the cylindrical polishing pad 30 for polishing the plurality of grooves 11 is processed, and the polishing pad 30 and the groove processing drum grindstone 20 are rotated on rotation axes parallel to each other. A plurality of pad grooves 31 corresponding to the plurality of protrusions 21 are formed on the entire side surface of the polishing pad 30 by pressing the grooving drum grindstone 20 against the polishing pad 30 while pressing the groove processing drum grindstone 20 against the polishing pad 30 .

At this time, the pad grooves 31 are formed in the state where the polishing pad 30 is solidified by freezing (after containing an appropriate amount of water if necessary). The polishing pad 30 having the pad grooves 31 formed therein is used in the following steps after being thawed (dried if necessary).

Next, in the grooving step (STEP 100 / FIG. 1 ), a plurality of concave grooves 11 are formed in the SiC ingot 10 by a common grooving drum grindstone 20 so as to extend around the entire side surface.

Specifically, in the grooving step (STEP 100/FIG. 1), grooving drum grindstones 20 each having a plurality of convex portions 21 corresponding to the plurality of concave grooves 11 formed on the entire side surface are rotated on rotating shafts parallel to each other. The recessed groove 11 is formed by press-contacting the SiC ingot 10 while allowing it to move.

At this time, the SiC ingot 10 is rotatably supported with both end surfaces protected by the pair of protective plates 15 , 15 .

The protective plate 15 is made of, for example, a synthetic resin such as polyvinyl chloride, and is bonded to the SiC ingot 10 via an adhesive or the like as necessary.

Both ends of the SiC ingot 10 can be protected by the pair of protective plates 15, 15, and chipping and cracking of the both ends can be prevented. Therefore, it is possible to form a plurality of grooves 11 up to the edge of both end faces, and as a result, it is possible to cut more SiC wafers 100 to be described later.

Moreover, when the SiC ingot 10 is clamped and fixed to the rotating shaft, the protective plates 15, 15 can be processed (for example, drilled) and fixed as necessary. In addition, since SiC ingot 10 itself is not processed in this case as well, SiC ingot 10 is not damaged.

The plurality of concave grooves 11 of the SiC ingot 10 and the plurality of pad grooves 31 of the polishing pad 30 formed by the above processing steps have the same shape (same pitch) corresponding to the plurality of convex portions 21 of the grooving drum grindstone 20. ).

Therefore, as shown in FIG. 3, almost simultaneously with the formation of the plurality of grooves 11 in the SiC ingot 10 in the groove processing step (STEP 100/FIG. 1), the pitch of the grooves 11 and the pitch of the grooves 11 are adjusted in the polishing step (STEP 110/FIG. 1). A plurality of pad protrusions 32 (protrusions between two adjacent pad grooves 31 , 31 ) of the same polishing pad 30 can polish along the grooves 11 .

Here, in the polishing step (STEP 110/FIG. 1), polishing may be performed using CMP slurry (chemical-mechanical liquid abrasive). (buffing agent) may be added.

Furthermore, as shown in FIG. 4A, in the cutting step (STEP 120/FIG. 1), the plurality of grooves 11 formed in the grooving step (STEP 100/FIG. 1) are provided with a bobbin of a wire saw device 4 as a cutting device. The SiC ingot 10 is cut into slices by arranging a plurality of wires 42 extending between 41 and advancing the wires 42 while rotating them.

At this time, by accurately arranging the plurality of wires 42 in the plurality of grooves 11, the SiC ingot 10 can be accurately cut into slices in one operation.

Therefore, in the present embodiment, the wire saw device 4 is provided at a position facing the ingot support means 43 that supports the SiC ingot 10 via the plurality of wires 42 , and the plurality of wires arranged in the plurality of recessed grooves 11 are connected to each other. An imaging means 44 for imaging 42 is provided.

The ingot support means 43 supports the SiC ingot 10, and its base is composed of, for example, a rotary table. It has a function as a shift angle adjusting means that rotates about the center in the direction of the arrow and is fixed at an arbitrary position.

The imaging means 44 is composed of, for example, a CCD camera or the like, and as shown in FIG. A plurality of wires 42 overlapped with a plurality of recessed grooves 11 on the distal end side of an electric slider 47 configured to move back and forth in the hollow frame of the connection plate 46 and the auxiliary connection plate 46' integrated with the connection plate 46). is arranged to image the

In this embodiment, an electric table (vertical movement table) for focus/zoom adjustment is provided between the imaging means 44 and the electric slider 47, but the electric table may be omitted.

In the cutting process (STEP 120/FIG. 1) by the wire saw device 4 configured in this way, a shift angle adjustment process is first performed prior to cutting.

In the deviation angle adjustment process, first, the tip side of the electric slider 47 is advanced, and the imaging direction of the imaging means 44 is set to an imaging position where the plurality of grooves 11 and the plurality of wires 42 overlap (from directly below the SiC ingot 10 in the figure). (so that you can shoot directly above).

In this state, an image captured by the image capturing means 44 is acquired, and deviation angles 42 of the plurality of wires with respect to the plurality of grooves 11 are detected from the captured image.

Specifically, as shown in an actual captured image in FIG. 5, the angle of deviation (non-parallel) between the advancing direction of the groove 11 (horizontal direction in the drawing) and the advancing direction of the wire 42 (horizontal direction in the drawing) can be detected.

Detection of the deviation angle may be performed visually, but for example, by binarizing the captured image and performing edge detection processing, etc., the direction of movement of the width position (vertical position) of the groove 11 and the direction of movement of the wire 42 can be detected. It is also possible to detect the width position (vertical position) and the advancing direction as straight lines, and to detect the deviation angle from the inclination between these straight lines by image processing.

Next, the support means 43 is rotated around the rotation axis Z so as to cancel the detected deviation angle and make it 0, and after confirming that the deviation angle has become 0 in the captured image, A SiC ingot 10 is fixed.

When the angle adjustment means is configured by an electric rotary table so that it can be automatically adjusted from the captured image, the deviation corresponding to the inclination between the straight lines is output as the output step number to the stepping motor of the rotary table. It may be configured by feedback control to

When the adjustment of the deviation angle is completed in this way, the tip side of the electric slider 47 is retracted and retracted.

By accurately arranging the plurality of wires 42 in the plurality of recessed grooves 11 in this way, the SiC ingot 10 can be accurately cut into slices in one operation.

In addition, as shown in FIG. 5, each SiC wafer 100 obtained by cutting into slices has its corners uniformly chamfered by polishing pads 30 whose pitches are precisely matched. There is no need to perform chamfering or the like again later.

The configuration of the semiconductor crystal wafer (SiC wafer) manufacturing apparatus (cutting apparatus) of the present embodiment includes the groove processing drum grindstone 20 , the polishing pad 30 , and the wire saw device 40 .

Next, as shown in FIG. 6, in the first surface processing step (STEP 130/FIG. 1), one surface 110 of one of the cut surfaces is used as a support surface, and the remaining other surface 120 is mechanically polished (high-precision grinding). apply.

Specifically, in the first surface processing step (STEP 130/FIG. 1), grinding is performed by a mechanical polishing device 50 (ultra-high synthetic high-precision grinding device) that performs mechanical polishing.

A mechanical polisher 50 includes a spindle 51 and a diamond grindstone 53 on a platen 52 which is a surface plate.

First, with one surface 110 as the upper surface, the vacuum porous chuck 54, which is the suction plate of the spindle 51, is attracted and supported.

At this time, the spindle 51 and the diamond grindstone 53 are rotationally driven by a drive device (not shown), and the other surface 120 is ground by pressing the spindle 51 against the diamond grindstone 53 by a compressor (not shown) or the like.

After grinding, the diamond grindstone 53 may be dressed by a dresser or the like.

In addition, the mechanical polisher 50 may have functional water supply piping so that a plurality of functional waters can be used during processing, if necessary.

Next, in the second surface processing step (STEP 140/FIG. 1), the other surface 120 subjected to high-precision grinding in the first surface processing step is used as the upper surface, and the one surface 110 is subjected to the first surface processing step. A similar high-precision grinding process is applied.

That is, with the other surface 120 as the upper surface, it is attracted to the vacuum porous chuck 54 which is the suction plate of the spindle 51 , and the one surface 110 is ground with the diamond grindstone 53 with the one surface 110 as the lower surface.

In this case, too, dressing may be performed by pressing a dresser or the like against the diamond grindstone 53 as necessary.

According to the mechanical polishing (high-precision grinding) process of the first surface processing step (STEP 130/Fig. 1) and the second surface processing step (STEP 140/Fig. 1), the high flatness obtained by the cutting and polishing process can be obtained. One of the transferless cut surfaces is used as a support surface (adsorption surface), and the remaining surfaces are sequentially mechanically polished (high-precision grinding) to prevent so-called transfer and produce high-quality SiC wafers. In addition, it is possible to greatly simplify the conventional loose grinding process, ie, the complicated manufacturing process such as lapping multiple times of primary to quaternary.

More specifically, there is no need to perform rough grinding or finish grinding multiple times by changing the grindstone. In addition, there is an advantage that a large intrinsic semiconductor layer that can be used from the SiC wafer 100 can be secured.

In the high-precision grinding process of the first surface processing step (STEP 130/FIG. 1) and the second surface processing step (STEP 140/FIG. 1), the size of the SiC wafer 100 is currently up to 8 inches, and each diameter wafers are set according to the area of the head (up to 12 inches possible) and subjected to high-precision grinding processing.

The details of the method for manufacturing the SiC wafer according to the present embodiment have been described above. As described above in detail, according to the SiC wafer manufacturing method and apparatus of the present embodiment, a plurality of grooves 11 are formed on the entire side surface of the SiC ingot 10 by the groove processing drum grindstone 20. A plurality of wires 42 can be accurately arranged in the groove 11 of the groove 11, and the wire 42 can be placed on one side (for example, one side in the width direction) of the groove 11 while the groove 11 serves as a guide for cutting. The SiC ingot 10 can be accurately cut into slices by a plurality of wires 42 in one operation by concentrating the cut portions of the wires on the bottom of the grooves 11 without unevenness.

In the above embodiment, the pad grooves 31 and the pad protrusions 32 are formed in the plurality of grooves 11 (the plurality of protrusions 21 of the grooving drum grindstone 20) that surround the entire side surface of the SiC ingot 10. may be modified to have the same shape as

Specifically, in the pad grooving process, a cylindrical pad grooving grindstone is prepared in advance, and the grooving drum grindstone 20 and the pad grooving grindstone are pressed against each other while being rotated on rotation axes parallel to each other. Thus, pad grooving grooves (pad grooving protrusions) corresponding to the plurality of protrusions 21 are formed on the pad grooving grindstone, and then the pad grooving grindstone and the polishing pad 30 are rotated on rotation axes parallel to each other. A plurality of pad grooves corresponding to the pad processing grooves (pad processing protrusions) may be formed on the entire side surface of the polishing pad 30 by pressing the pad groove processing grindstone against the polishing pad 30 while pressing the pad groove processing grindstone against the polishing pad 30 .

In addition, in the SiC wafer manufacturing method of the present embodiment, a chemical mechanical polishing (CMP) process and a wafer cleaning process may be performed after the series of processes described above, if necessary.

Furthermore, in this embodiment, as a method for manufacturing a semiconductor crystal wafer, a case of manufacturing a SiC wafer from a SiC ingot has been described, but the semiconductor crystal is not limited to SiC, and the semiconductor crystal is not limited to SiC. Other compound semiconductors may be used.

Further, in the present embodiment, in the grooving step (STEP 100/FIG. 1), the SiC ingot 10 is rotatably supported with both end surfaces thereof protected by a pair of protective plates 15, 15. Illustrated, but not limited to. For example, the pair of protection plates 15, 15 may be omitted and the SiC ingot 10 may be fixed directly to the rotating shaft.

Furthermore, in processes other than the groove processing process (STEP 100/FIG. 1), for example, the polishing process (STEP 110/FIG. 1) and the cutting process (STEP 120/FIG. 1), both end faces of the SiC ingot 10 are 15 may be protected before processing.

Further, in the present embodiment, as shown in FIG. 4, the positional relationship between the wire saw device 4 and the SiC ingot 10 is such that the wire 42 is (relatively) arranged outside the wire 42 around which the SiC ingot 10 is wound. Although the description has been given of the case of traveling outward in the circumferential direction (upward in the drawing), the present invention is not limited to this.

For example, the SiC ingot 10 may be placed inside the winding wire 42 and the wire 42 (relatively) advances inward in the circumferential direction (downward in the figure). In this case, the imaging unit 44 is arranged above the wire 42 (so as to capture an image from directly above to directly below the SiC ingot 10).

DESCRIPTION OF SYMBOLS 1... SiC crystal (semiconductor crystal), 4... Wire saw apparatus, 10... SiC ingot (semiconductor crystal ingot), 11... Groove, 15, 15... Pair of protective plates, 20... Grooving drum grindstone, 21... Convex portion , 30 Polishing pad 31 Pad groove 32 Pad protrusion 41 Bobbin 42 Wire 43 Ingot support means 44 Imaging means 45 Frame 46 Connection plate 46 ′ Auxiliary connection Plate 47 Electric slider 50 Mechanical polishing device (super-synthetic high-precision grinding device) 51 Spindle 52 Platen 53 Diamond grindstone 54 Vacuum porous chuck (adsorption plate) 100 SiC wafer (semiconductor crystal wafer), 110...one side, 120...other side.

Claims (4)

A semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a semiconductor crystal ingot ground into a cylindrical shape,
a drum grindstone for forming a plurality of grooves around the entire side surface of the semiconductor crystal ingot, the groove processing drum grindstone having a side surface formed with a plurality of protrusions corresponding to the plurality of grooves;
a wire saw device for cutting the semiconductor crystal ingot into slices by advancing the plurality of wires arranged in the plurality of recessed grooves while rotating them;
In the wire saw device, imaging means for imaging the plurality of wires arranged in the plurality of grooves at a position facing ingot support means for supporting the semiconductor crystal ingot via the plurality of wires ;
a slider that is provided on the distal end side of the wire saw device and that moves the imaging means from the frame of the wire saw device to the position for imaging and that can be retracted and retracted after imaging;
with
An apparatus for manufacturing a semiconductor crystal wafer, wherein deviation angles of the plurality of wires with respect to the plurality of grooves are detected from an image captured by the imaging means. In the semiconductor crystal wafer manufacturing apparatus according to claim 1,
The semiconductor crystal wafer, wherein the ingot supporting means has a deviation angle adjusting means for rotating and fixing the semiconductor crystal ingot so that the deviation angle detected by the captured image by the imaging means is zero. manufacturing equipment. A method for manufacturing a semiconductor crystal wafer by cutting a wafer into slices from a semiconductor crystal ingot ground into a cylindrical shape, comprising:
a grooving step of forming a plurality of grooves extending around the entire side surface of the semiconductor crystal ingot;
a cutting step using a wire saw device for cutting the semiconductor crystal ingot into slices by moving forward while rotating a plurality of wires arranged in the plurality of grooves formed in the groove processing step;
In the grooving step, grooving drum grindstones having side surfaces formed with a plurality of projections corresponding to the plurality of grooves are pressed against the semiconductor crystal ingot while being rotated on rotating shafts parallel to each other. forming a concave groove,
In the cutting step, when cutting the semiconductor crystal ingot into slices by advancing the plurality of wires arranged in the plurality of recessed grooves while rotating them, the slider having the imaging means provided on the tip side is moved to the above-described direction. The plurality of wires arranged in the plurality of recessed grooves are observed by the image pickup device at positions facing ingot support means for supporting the semiconductor crystal ingot via the plurality of wires. capturing an image, detecting deviation angles of the plurality of wires with respect to the plurality of grooves from the captured images, adjusting the deviation angles to be 0 , and retracting the slider after adjusting the deviation angles. A method for manufacturing a semiconductor crystal wafer, characterized by: In the method for manufacturing a semiconductor crystal wafer according to claim 3,
In the cutting step, prior to cutting, the semiconductor crystal ingot is fixed by rotating the ingot support means so that the deviation angle detected by the image captured by the imaging means is zero. A method of manufacturing a semiconductor crystal wafer, wherein

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