JP7104909B1 - Semiconductor crystal wafer manufacturing method and manufacturing apparatus - Google Patents

Abstract

Kind Code: A1 An object of the present invention is to provide a semiconductor crystal wafer manufacturing method and manufacturing apparatus capable of easily and reliably manufacturing a high-quality semiconductor crystal wafer. A pair of clamping plates 44 corresponding to both end faces of a Si ingot composing a wire support part 40 and a pair of clamping plates 44 formed on the periphery of the clamping plates 44 in a cutting step of a method for manufacturing a Si wafer, which is a semiconductor crystal wafer. The guide portion 45 and the rod 41 advancing along the guide portion 45 abut and support the wire 31 and advance along the side profile of the Si ingot 10 . [Selection drawing] Fig. 3

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor crystal wafer in which the surface of a wafer sliced from a cylindrically ground semiconductor crystal ingot is subjected to high-precision grinding.

Conventionally, as a method for manufacturing Si wafers and SiC wafers, which are semiconductor crystal wafers of this type, a crystal-grown single crystal mass is formed into a cylindrical ingot as a wafer shape forming step, as shown in Patent Document 1 below. Ingot molding process to be processed, crystal orientation molding process of forming a notch in a part of the outer circumference so as to serve as a mark indicating the crystal orientation of the ingot, and slicing the single crystal ingot into a thin disc-shaped wafer. a slicing step, a flattening step of flattening the wafer using abrasive grains less than the modified Mohs hardness, a stamping forming step of forming a stamp, and a chamfering step of chamfering the outer peripheral portion, and then processing deterioration The layer removal step includes a process-affected layer removal step for removing the process-affected layer introduced into the wafer in the preceding step, and finally, as a mirror polishing step, the mechanical action of the polishing pad and the chemical action of the slurry. A method for manufacturing a semiconductor crystal wafer is known that includes a chemical mechanical polishing (CMP) step in which polishing is performed using a combination of

Japanese Patent Application Laid-Open No. 2020-15646

However, such a conventional method for manufacturing a semiconductor crystal wafer involves a large number of complicated manufacturing steps, and thus has the problem of complicating the structure of the apparatus and increasing the manufacturing cost.

On the other hand, if the manufacturing process is simplified, it becomes difficult to stably obtain the quality required for the semiconductor crystal wafer.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor crystal wafer manufacturing method and manufacturing apparatus that can easily and reliably manufacture high-quality semiconductor crystal wafers.

A method for manufacturing a semiconductor crystal wafer according to a first aspect of the invention is a method for manufacturing a semiconductor crystal wafer in which wafers are sliced from a cylindrically ground semiconductor crystal ingot, comprising:
In the grooving step for obtaining semiconductor crystal wafers by slicing the semiconductor crystal ingot with a plurality of wires,
When cutting the semiconductor crystal ingot into slices by advancing the plurality of wires while rotating them, the wires are supported by wire support portions that support the wires at both ends of the contact portion between the wires and the semiconductor crystal ingot. was supported by
The wire supporting portion includes a pair of clamping plates which are plates having a shape corresponding to both end faces of the semiconductor crystal ingot and clamp the both end faces, a guide portion formed on the outer circumference of the clamping plate, and the guide portion. and a rod extending along a side surface of the semiconductor crystal ingot, the rod supporting the wire and extending along the lateral contour of the semiconductor crystal ingot.

According to the method for manufacturing a semiconductor crystal wafer of the first invention, when a semiconductor crystal ingot is cut into slices by a plurality of wires, both ends of the contact portions of the wires with the ingot are supported by the rods of the wire support portions. Therefore, it is possible to prevent the wire from arching at the contact portion and maintain a nearly horizontal state.

Here, by advancing the rods of the wire support portion along the side contour of the semiconductor crystal ingot through the guide portion, the rods can be always positioned at both ends of the contact portion between the wire and the semiconductor crystal ingot. can.

Therefore, it is possible to prevent the wire from bowing during cutting and biasing the cutting stress toward both ends, and it is possible to realize a cut surface without undulations and streaks. It is possible to greatly simplify complex manufacturing processes such as grinding stone processing, that is, lapping multiple times from primary to quaternary.

Thus, according to the semiconductor crystal wafer manufacturing method of the first invention, it is possible to easily and reliably manufacture a high-quality semiconductor crystal wafer.

A semiconductor crystal wafer manufacturing apparatus according to a second aspect of the present invention is a semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a cylindrically ground semiconductor crystal ingot,
a wire saw section for cutting the semiconductor crystal ingot by advancing a plurality of wires while rotating the semiconductor crystal ingot;
a wire supporting portion that supports the wire at both ends of a contact portion between the wire of the wire saw portion and the semiconductor crystal ingot;
The wire supporting portion includes a pair of clamping plates which are plates having a shape corresponding to both end faces of the semiconductor crystal ingot and clamp the both end faces, a guide portion formed on the outer circumference of the clamping plate, and the guide portion. and a rod extending along a side surface of the semiconductor crystal ingot, the rod supporting the wire and extending along the lateral contour of the semiconductor crystal ingot.

According to the semiconductor crystal wafer manufacturing apparatus of the second aspect of the invention, when the semiconductor crystal ingot is cut into slices by a plurality of wires, both ends of the contact portion of the wires with the ingot are supported by the rods of the wire support portion. Therefore, it is possible to prevent the wire from arching at the contact portion and maintain a nearly horizontal state.

Here, by advancing the rods of the wire support portion along the side contour of the semiconductor crystal ingot through the guide portion, the rods can be always positioned at both ends of the contact portion between the wire and the semiconductor crystal ingot. can.

Therefore, it is possible to prevent the wire from bowing during cutting and biasing the cutting stress toward both ends, and it is possible to realize a cut surface without undulations and streaks. It is possible to greatly simplify complex manufacturing processes such as grinding stone processing, that is, lapping multiple times from primary to quaternary.

Thus, according to the semiconductor crystal wafer manufacturing apparatus of the second invention, it is possible to easily and reliably manufacture high-quality semiconductor crystal wafers.

The semiconductor crystal wafer manufacturing apparatus of the third invention is, in the second invention,
The wire support section has a progression control section that advances the rod in conjunction with advancement of the wire of the wire saw section.

According to the semiconductor crystal wafer manufacturing apparatus of the third aspect of the invention, by interlocking the movement of the wire with the movement of the bar of the wire support portion, the positional relationship in the direction of movement can be maintained, and the wire can always be held in a fixed position. It can be stably supported by the bearing force.

Thus, according to the semiconductor crystal wafer manufacturing apparatus of the third invention, it is possible to manufacture high-quality semiconductor crystal wafers simply, reliably and stably.

The semiconductor crystal wafer manufacturing apparatus of the fourth invention is, in the third invention,
The semiconductor crystal ingot is ground into a cylindrical shape,
The holding plate of the wire support part is a circular plate,
The advance control section of the wire support section is a rotary table that is provided at a center of rotation where the rod advances circularly along the guide section and that is capable of adjusting rotational torque.

According to the semiconductor crystal wafer manufacturing apparatus of the fourth aspect of the invention, when the rod rotates circularly along the guide portion formed on the outer circumference of the circular plate, by providing a rotary table for controlling the rotational torque, The position of the rod can be precisely controlled by interlocking with the wire. Therefore, the rod can be pressed against the wire with a constant load.

Thus, according to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, it is possible to easily, reliably and stably manufacture high-quality semiconductor crystal wafers.

A semiconductor crystal wafer manufacturing apparatus according to a fifth aspect of the present invention is characterized in that, in any one of the second to fourth aspects of the invention,
The bar of the wire support part is provided on one or both of the upper side and the lower side of the wire of the wire saw part.

According to the semiconductor crystal wafer manufacturing apparatus of the fifth aspect of the invention, the arrangement of the rods supporting the wires can be either above or below the wires as long as they are located at both ends of the contact portion between the wire and the ingot. , the wire is straightened to a near-horizontal state, and the wire can be prevented from bowing at the contact portion.

Thus, according to the semiconductor crystal wafer manufacturing apparatus of the fifth invention, it is possible to easily, reliably and stably manufacture high-quality semiconductor crystal wafers.

4 is a flow chart showing the overall steps of a method for manufacturing a Si wafer (semiconductor crystal wafer) according to the present embodiment. FIG. 2 is an explanatory diagram showing the details of a groove processing step in the method of manufacturing the Si wafer of FIG. 1; FIG. 2 is an explanatory view showing the contents of a cutting step in the method of manufacturing the Si wafer of FIG. 1; FIG. 4 is an explanatory diagram showing the details of the cutting process in FIG. 3; FIG. 2 is an explanatory diagram showing the contents of a first surface processing step and a second surface processing step in the Si wafer manufacturing method of FIG. 1;

As shown in FIG. 1, in the present embodiment, the method for manufacturing a Si wafer, which is a semiconductor crystal wafer, is a Si wafer obtained by cutting a Si ingot ground into a cylindrical shape into slices and removing undulations from one surface of the wafer. , comprising a grooving step (STEP 110/FIG. 1), a cutting step (STEP 120/FIG. 1), a first surface machining step (STEP 130/FIG. 1), and a second surface machining step (STEP 150/FIG. 1).

Details of each step and devices used in each step will be described with reference to FIGS.

First, in the grooving step of STEP 100 shown in FIG. 2, a cylindrical Si ingot 10 obtained by determining the crystal orientation and applying cylindrical grinding to the pre-crystallized Si crystal in the ingot processing step is prepared. .

Then, in the grooving step of STEP 100 , a plurality of grooves 11 are formed around the entire side surface of the Si ingot 10 .

Specifically, in the grooving step of STEP 100, grooving drum grindstones 20 having convex portions 21 corresponding to the concave grooves 11 formed on the side surfaces are pressed against the Si ingot 10 while being rotated on rotating shafts parallel to each other. to form the recessed groove 11 .

Incidentally, it is desirable to subject the Si ingot 10 (especially the grooves 11) obtained by the grooving process to a non-damaging mirror finish by a chemical treatment technique.

Next, in the cutting step of STEP 110 shown in FIG. 3, the Si ingot 10 is cut into slices by a plurality of wires 31 arranged in the plurality of grooves 11 formed in the groove processing step to obtain the Si wafers 100. .

Specifically, in the cutting step, the wire saw device, which is a cutting device, causes the wire saw unit 30 to align the plurality of wires 31 with the plurality of grooves 11 formed in the grooving step, and rotate the wires 31. By moving forward, the Si ingot 10 is cut into slices.

A plurality of concave bobbin grooves corresponding to the plurality of convex portions 21 are formed on the entire side surface of the wire saw bobbin 32 around which the wire 31 is wound. Moreover, the Si ingot 10 is fitted and fixed to a slicing base (dummy plate) 35 into which the Si ingot 10 is fitted via an adhesive or the like.

At this time, the wire support portions 40 provided in the wire saw device contact and support the wire 31 at both ends of the contact portion between the wire 31 and the Si ingot 10 .

Specifically, the wire support section 40 includes a pair of rod bodies 41 , 41 , an arm 42 , a guide receiving section 43 , a clamping plate 44 , a guide section 45 and a rotary table 46 .

The rod 41 is a cylindrical rod arranged parallel to the axial direction of the Si ingot 10 , and both ends of the rod 41 are pivoted by arms 42 . It is preferable that a bearing such as a ball bearing is provided between the rod 41 and the arm 42 so that the rod 41 can rotate freely in an unloaded state.

Disc-shaped guide receiving portions 43 are provided at both ends of the rod 41 , and the rod 41 is configured to pass through the guide receiving portions 43 . Here, too, it is preferable that a bearing such as a ball bearing is provided between the guide receiving portion 43 and the rod 41 so that the rod 41 can rotate freely in an unloaded state.

The clamping plate 44 is a circular plate corresponding to both end surfaces of the Si ingot 10 and clamps the both end surfaces. The guide portion 45 is formed on the outer periphery of the clamping plate 44 , and the guide receiving portion 42 of the rod 41 abuts thereon, so that the rod 41 advances along the outer periphery of the clamping plate 44 via the guide receiving portion 42 . to assist.

Here, it is preferable that the guide portion 45 and the guide receiving portion 43 (corresponding to the advance control portion of the present invention) are provided with grooves on one side and projections on the other side so as to reliably advance in the circumferential direction. In this embodiment, a groove is provided in the guide portion 45 (the side surface of the clamping plate 44), and a convex portion running along the outer periphery is provided in the guide receiving portion 43. As shown in FIG.

The rotary table 46 (corresponding to the advance control section of the present invention) is a rotation control device capable of adjusting rotation torque, and controls rotation of the arm 42 . That is, when the rod 41 advances circularly along the guide portion 45 , the central axis of rotation is connected to the control shaft 46 A of the rotary table 46 .

In the rotary table 46 of this embodiment, the rotational torque can be adjusted by the air pressure (inflow and outflow of air) of the two ducts 46B, 46B.

Further, the rotary table 46 is screwed by a screw 46C penetrating the frame 47 and integrated with the frame (see FIG. 4).

In this embodiment, the pair of rods 41 , 41 are provided above the wire 31 , and when the Si ingot 10 is cut by the plurality of wires 31 circulating through the wire saw bobbin 32 , the wire 31 is cut. Both ends of the contact portion with the Si ingot 10 are abutted and supported from above to prevent the wire 31 from winding around the Si ingot 10 and bending the wire 31 at the contact portion to maintain a nearly horizontal state. can be done.

At this time, the rotary table 46 adjusts the air pressure of the two ducts 46B, 46B in accordance with the advance of the wire saw device 30 (upward advance in the drawing (cutting speed)), rotates the control shaft 46A, The bar 41 is advanced around the circumference of the holding plate 44 via the arm 42 .

Thereby, the position of the rod 41 can be interlocked with the wire 31 and accurately controlled, and the rod 31 can be pressed against the wire 31 with a constant load.

The rotary table 46 may advance the rod according to a certain load from the wire 31 (in the case of exceeding the specified load value) (instead of actively rotating the control shaft 46A). Thereby, the rod can be pressed against the wire with a constant load, and the movement of the wire and the rod may be interlocked.

Note that the pair of rods 41, 41 are arranged below the wire 31 instead of above the setting wire 31 so that the wire 31 is supported by the rod 41 to prevent slack of the wire 31 below. may be suppressed.

Furthermore, in addition to the pair of rods 41, 41 (arranged above the wire 31) of the present embodiment, the arm 42 is extended, and another pair of rods (located below the wire 31) is attached to the tip of the extended arm. (arrangement) may be provided, and both ends of the contact portion of the wire 31 with the Si ingot 10 may be abutted and supported from above and below.

Further, in the present embodiment, it is preferable that recessed support grooves corresponding to the plurality of protrusions 21 of the grooving drum grindstone 20 are formed on the entire side surface of the rod 41 .

According to the wire support portion 40 configured as described above, as shown in FIG.

At this time, the plurality of wires 31 can be simultaneously supported at the same position by the rod 41 by the wire support portion 40 .

In addition, since the rod 41 is configured to be rotatable in a no-load state via the bearing 42, the wire 31 can be reliably supported while maintaining the circulating speed of the wire 31. In addition, scraping of the rod 41 by the wire 31 can be prevented.

Further, the rod 41 has support grooves that are the same as the grooves 11 of the Si ingot 10 over the entire side surface, and the wire saw bobbin 32 is also formed with bobbin grooves that are the same as the grooves 11 . Therefore, the wire 31 can be reliably positioned in the recessed groove 11 by the bobbin groove, and the wire 31 can be reliably supported by the support groove without shifting laterally during cutting.

In addition, the wire supporting portion 40 is advanced along the side contour of the Si ingot 10 while being interlocked with the displacement of the wire 31 of the wire saw portion 30 in the advancing direction, so that the contact portion between the wire and the Si ingot 10 is reduced. Wire supports can always be positioned at both ends.

Even if the wire 31 and the wire supporting portion 40 finally advance along the slicing base 35 and completely cut the Si ingot 10 , the wire 31 remains on the slicing base, thereby cutting the Si ingot 10 . It is possible to prevent peeling of the end portion.

As a result, both ends of the contact portion of the wire 31 with the Si ingot 10 are always supported by the wire support portions 40, so that the wire 31 is prevented from arching at the contact portion and maintained in a nearly horizontal state. can do.

As a result, it is possible to prevent the wire from bowing at the time of cutting and biasing the cutting stress toward both ends, thereby realizing a cut surface without undulations and streaks.

In this way, the Si ingot 10 can be accurately cut into slices in one operation by using the plurality of wires 31 that are accurately arranged in the plurality of grooves 11, and there is no need to perform another chamfering process.

Next, as shown in FIG. 5, in the first surface processing step of STEP 120, one surface 110 of one of the cut surfaces is used as a support surface, and the remaining other surface 120 is subjected to mechanical polishing (high-precision grinding).

Specifically, in the first surface processing step, grinding is performed by a mechanical polishing device 50 (ultra-high synthetic high-precision grinding processing device) that performs mechanical polishing.

A mechanical polisher 50 includes a spindle 51 and a diamond grindstone 53 on a platen 52 which is a surface plate.

First, with one surface 110 as the upper surface, the vacuum porous chuck 54, which is the suction plate of the spindle 51, is attracted and supported.

At this time, the spindle 51 and the diamond grindstone 53 are rotationally driven by a drive device (not shown), and the spindle 51 is pressed against the diamond grindstone 53 by a compressor (not shown) or the like, whereby the remaining other surface 120 is ground. .

After grinding, the diamond grindstone 53 may be dressed by a dresser or the like.

In addition, the mechanical polisher 50 may have functional water supply piping so that a plurality of functional waters can be used during processing, if necessary.

Next, in the second surface machining step of STEP 130, the other surface 120, which has been subjected to high-precision grinding in the first surface machining step, is used as the upper surface, and the one surface 110 is subjected to high-precision grinding similar to the first surface machining step. Grinding is applied.

That is, with the other surface 120 as the upper surface, it is attracted to the vacuum porous chuck 54 which is the suction plate of the spindle 51 , and the one surface 110 is ground with the diamond grindstone 53 with the one surface 110 as the lower surface.

In this case, too, dressing may be performed by pressing a dresser or the like against the diamond grindstone 53 as necessary.

According to the mechanical polishing (high-precision grinding) processing in the first surface processing step of STEP 120 and the second surface processing step of STEP 130, either one of the cut surfaces having high flatness obtained by the cutting step can be used as a support surface. By sequentially applying mechanical polishing (high-precision grinding) to the remaining surfaces as the (adsorption surface), it is possible to prevent so-called transfer and obtain a high-quality Si wafer, as well as conventional free grinding stone processing. In other words, it is possible to greatly simplify the complicated manufacturing process such as multiple times of primary to quaternary lapping.

More specifically, there is no need to perform rough grinding or finish grinding multiple times by changing the grindstone. In addition, there is an advantage that a large intrinsic semiconductor layer that can be used from the Si wafer 100 can be secured.

In the high-precision grinding process of the first surface processing step of STEP 120 and the second surface processing step of STEP 130, the size of the Si wafer 100 is currently up to 8 inches, and the diameter of each wafer depends on the area of the head. It is then set (possibly up to 12 inches) and subjected to the precision grinding process.

The details of the Si wafer manufacturing method according to the present embodiment have been described above. As described above in detail, according to the Si wafer manufacturing method of the present embodiment, a high-quality Si wafer can be manufactured easily and reliably.

In this embodiment, the case where the pair of rods 41, 41 are positively advanced via the rotary table 46 has been described, but the present invention is not limited to this.

For example, in this embodiment, the rotary table 46 is omitted, and the wire saw bobbin 32 of the wire saw section 30 and the rod 41 of the wire support section 40 are respectively supported by a frame and frame operating means (not shown), and the wire is 31 (wire saw bobbin 32) and the wire support 40 may be advanced.

In this case, the wire support portion 40 (the rod 41) is advanced so that the amount of displacement of the wire 31 in the direction of movement and the amount of displacement of the wire support portion 40 in the direction of movement are interlocked. As a result, the positional relationship between the wire 31 and the wire support portion 40 (the rod 41) in the traveling direction may be maintained.

Further, in this case, the advance operation of the wire saw bobbin 32 and the wire support part 40 may be stored in advance by teaching to the frame operation means according to the Si ingot 10 , and the operation according to the standard size of the Si ingot 10 . It may be configured to read out the motion data by selecting the motion progression from the data table.

Furthermore, in the present embodiment, the case where the Si ingot 10 has a cylindrical shape has been described, but the Si ingot 10 is not limited to this. The plate 44 may also have a plate shape corresponding to the cross-sectional shape of the prism. Also in this case, the pair of rods 41, 41 may be advanced along the outer periphery of the clamping plate 44 in conjunction with the advancement of the wire 31 (wire saw bobbin 32).

Further, in the present embodiment, a case where the grooving step of STEP 10 is performed has been described, but the grooving step may be omitted and the Si ingot 10 having no recess may be directly cut in STEP 110 .

In addition, in the Si wafer manufacturing method of the present embodiment, a chemical mechanical polishing (CMP) process and a wafer cleaning process may be performed after the series of processes described above, if necessary.

Further, in this embodiment, the case of manufacturing the Si wafer 100 from the Si ingot 10 has been described as the method of manufacturing the semiconductor crystal wafer. That is, the Si ingot (Si wafer) has a large diameter of 300 mmφ (12 inches), and the horizontal width of the wire 31 for cutting is correspondingly long. Since the distance of 32 is long and the wire is easily shaken, it is particularly suitable, but the semiconductor crystal is not limited to Si. The semiconductor crystal may be, for example, silicon carbide (SiC), gallium hyacinth, indium phosphide, or other compound semiconductors.

DESCRIPTION OF SYMBOLS 1... Si crystal (semiconductor crystal), 10... Si ingot (semiconductor crystal ingot), 11... Groove, 20... Grooving drum grindstone, 21... Convex part, 30... Wire saw part (wire saw device), 31... Wire , 32... Wire saw bobbin, 35... Base for slicing (dummy plate), 40... Wire support part (wire saw device), 41... Rod body, 42... Arm, 43... Guide receiving part (convex part), 44... Clamping Plate 45 Guide portion (groove) 46 Rotary table 46A Control shaft 46B Duct 46C Screw 47 Frame 50 Mechanical polishing device (ultra-high synthetic high-precision grinding device) 51 Spindle 52 Platen 53 Diamond whetstone 54 Vacuum porous chuck (adsorption plate) 100 Si wafer (semiconductor crystal wafer) 110 One surface 120 Other surface.

Claims (5)

A method for manufacturing a semiconductor crystal wafer by cutting a wafer into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape, comprising:
In the grooving step for obtaining semiconductor crystal wafers by slicing the semiconductor crystal ingot with a plurality of wires,
When cutting the semiconductor crystal ingot into slices by advancing the plurality of wires while rotating them, the wires are supported by wire support portions that support the wires at both ends of the contact portion between the wires and the semiconductor crystal ingot. was supported by
The wire support portion includes a pair of clamping plates which are plates having a shape corresponding to both end faces of the semiconductor crystal ingot and clamp the both end faces, a guide portion formed on the outer circumference of the clamping plate, and the guide portion. and a rod that advances along the edge of the semiconductor crystal ingot, the rod supporting the wire and advancing along the side profile of the semiconductor crystal ingot. A semiconductor crystal wafer manufacturing apparatus for cutting wafers into slices from a cylindrically ground semiconductor crystal ingot,
a wire saw section for cutting the semiconductor crystal ingot by advancing a plurality of wires while rotating the semiconductor crystal ingot;
a wire supporting portion that supports the wire at both ends of a contact portion between the wire of the wire saw portion and the semiconductor crystal ingot;
The wire supporting portion includes a pair of clamping plates which are plates having a shape corresponding to both end faces of the semiconductor crystal ingot and clamp the both end faces, a guide portion formed on the outer circumference of the clamping plate, and the guide portion. an apparatus for manufacturing a semiconductor crystal wafer, wherein the rod supports the wire and advances along the side contour of the semiconductor crystal ingot. In the semiconductor crystal wafer manufacturing apparatus according to claim 2,
The apparatus for manufacturing a semiconductor crystal wafer, wherein the wire support section has a progress control section for advancing the rod in conjunction with the advancement of the wire of the wire saw section. In the semiconductor crystal wafer manufacturing apparatus according to claim 3,
The semiconductor crystal ingot is ground into a cylindrical shape,
The holding plate of the wire support part is a circular plate,
The progress control section of the wire support section is a rotary table that is provided at a center of rotation where the rod advances circularly along the guide section and that is adjustable in rotational torque. manufacturing device. The semiconductor crystal wafer manufacturing apparatus according to any one of claims 2 to 4,
The apparatus for manufacturing a semiconductor crystal wafer, wherein the bar of the wire support part is provided on one or both of the upper side and the lower side of the wire of the wire saw part.

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