JP7100864B1 - Manufacturing method and equipment for semiconductor crystal wafers - Google Patents

Abstract

Kind Code: A1 An object of the present invention is to provide a semiconductor crystal wafer manufacturing method and manufacturing apparatus capable of easily and reliably manufacturing a high-quality semiconductor crystal wafer. A method of manufacturing a SiC wafer, which is a semiconductor crystal wafer, is a method of obtaining a SiC wafer by cutting a SiC ingot ground into a cylindrical shape into slices and subjecting the surface of the wafer to high-precision grinding. , a grooving step (STEP 100/FIG. 1), a cutting step (STEP 120/FIG. 1), a first surface machining step (STEP 120/FIG. 1), and a second surface machining step (STEP 130/FIG. 1). [Selection drawing] Fig. 1

Description

The present invention relates to a method for manufacturing a semiconductor crystal wafer in which the surface of a wafer cut into slices from a semiconductor crystal ingot ground into a cylindrical shape is subjected to high-precision grinding.

Conventionally, as a method for manufacturing a SiC wafer which is a semiconductor crystal wafer of this kind, as shown in Patent Document 1 below, as a wafer shape forming step, a mass of single crystal SiC crystal-grown is processed into a columnar ingot. The ingot forming process, the crystal orientation forming process in which a notch is formed in a part of the outer circumference so as a mark indicating the crystal orientation of the ingot, and the single crystal SiC ingot are sliced and processed into a thin disk-shaped SiC wafer. A slicing step, a flattening step of flattening a SiC wafer using abrasive grains having a modified moth hardness, a stamp forming step of forming a stamp, and a chamfering step of chamfering the outer peripheral portion are included, and then processing is performed. The altered layer removing step includes a processed altered layer removing step of removing the processed altered layer introduced into the SiC wafer in the previous step, and finally, as a mirror polishing step, the mechanical action of the polishing pad and the chemical of the slurry are included. A method for manufacturing a SiC wafer including a chemical mechanical polishing (CMP) step in which polishing is performed in combination with various actions is known.

Japanese Unexamined Patent Publication No. 2020-15646

However, the conventional method for manufacturing a SiC wafer has many problems that the manufacturing process is complicated, the apparatus configuration is complicated, and the manufacturing cost is high.

On the other hand, if the manufacturing process is simplified, it becomes difficult to stably obtain the quality required for the SiC wafer.

Therefore, an object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor crystal wafer, which can easily and surely manufacture a high-quality semiconductor crystal wafer.

The method for manufacturing a semiconductor crystal wafer according to the first invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A grooving step of forming a plurality of concave grooves orbiting the entire side surface of the semiconductor crystal ingot, and
A cutting step of cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in a plurality of concave grooves formed in the groove processing step to obtain a semiconductor crystal wafer.
Equipped with
In the cutting step, when the semiconductor crystal ingot is cut into slices by advancing while rotating a plurality of wires arranged in the plurality of concave grooves formed in the groove processing step, the wire and the semiconductor are used. It is supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot.
The wire support portion is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot, and the pair of rods is a grooved drum grindstone forming the plurality of concave grooves. It is characterized in that support grooves corresponding to a plurality of convex portions of the above are formed on the entire side surface.

According to the method for manufacturing a semiconductor crystal wafer of the first invention, in the groove processing step, a concave groove is formed in advance on the entire side surface of the semiconductor crystal ingot, so that the semiconductor crystal ingot is formed by a wire using the concave groove as a guide. It can be cut into slices with high accuracy.

At this time, since both ends of the contact portion with the ingot of the wire arranged in the concave groove are supported by the wire support portion, the wire is prevented from becoming a bow at the contact portion, and the state is close to horizontal. Can be maintained.

Therefore, it is possible to prevent the wire from forming a bow during cutting and biasing the cutting stress to both ends, and to realize a cut surface without waviness or streaks, which is generally performed in the flattening process. It is possible to greatly simplify complicated manufacturing processes such as grindstone processing, that is, multiple laps of the first to fourth orders.

As described above, according to the method for manufacturing a semiconductor crystal wafer of the first invention, a high-quality semiconductor crystal wafer can be easily and reliably manufactured.
The method for manufacturing a semiconductor crystal wafer according to the second invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A grooving step of forming a plurality of concave grooves orbiting the entire side surface of the semiconductor crystal ingot, and
A cutting step of cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in a plurality of concave grooves formed in the groove processing step to obtain a semiconductor crystal wafer.
Equipped with
In the cutting step, when the semiconductor crystal ingot is cut into slices by advancing while rotating a plurality of wires arranged in the plurality of concave grooves formed in the groove processing step, the wire and the semiconductor are used. It is supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot.
The wire support portion is characterized in that it travels along the outer shape of the side surface of the semiconductor crystal ingot.
Further, the method for manufacturing a semiconductor crystal wafer according to the third invention is a method for manufacturing a semiconductor crystal wafer in which a wafer is cut into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A grooving step of forming a plurality of concave grooves orbiting the entire side surface of the semiconductor crystal ingot, and
A cutting step of cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in a plurality of concave grooves formed in the groove processing step to obtain a semiconductor crystal wafer.
Equipped with
In the cutting step, when the semiconductor crystal ingot is cut into slices by advancing while rotating a plurality of wires arranged in the plurality of concave grooves formed in the groove processing step, the wire and the semiconductor are used. It is supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot.
The wire support portion is characterized in that it advances in conjunction with the displacement of the wire in the traveling direction.

The semiconductor crystal wafer manufacturing apparatus of the fourth invention is a semiconductor crystal wafer manufacturing apparatus that cuts a wafer into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A drum grindstone for forming a plurality of concave grooves that go around the entire side surface of the semiconductor crystal ingot, and a grooved drum grindstone in which a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface.
A wire saw portion that advances and cuts a plurality of wires arranged in the plurality of concave grooves while rotating the semiconductor crystal ingot having a plurality of concave grooves formed on the entire side surface by the drum grindstone.
A wire support portion for supporting the wire in the traveling direction is provided at both ends of the contact portion between the wire of the wire saw portion and the semiconductor crystal ingot .
The wire support portion is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot, and the pair of rods has a plurality of protrusions of the grooved drum grindstone over the entire side surface. It is characterized in that a support groove corresponding to the portion is formed.

According to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, it is an apparatus that realizes the semiconductor crystal wafer manufacturing apparatus of the first invention, and specifically, a grooved drum grindstone in which a plurality of convex portions are formed on the side surface. As a result, a plurality of concave grooves are formed around the entire side surface of the semiconductor crystal ingot.

Then, by advancing the plurality of wires arranged in the plurality of concave grooves while rotating them forward by the wire saw portion, the semiconductor crystal ingot can be accurately sliced by the wires using the concave grooves as a guide.

Here, the wire arranged in the concave groove by the wire support portion is supported by the wire support portion at both ends of the contact portion with the ingot, thereby preventing the wire from forming a bow at the contact portion. It can maintain a state close to horizontal.

Therefore, it is possible to prevent the wire from forming a bow during cutting and biasing the cutting stress to both ends, and to realize a cut surface without waviness or streaks, which is generally performed in the flattening process. It is possible to greatly simplify complicated manufacturing processes such as grindstone processing, that is, multiple laps of the first to fourth orders.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, it is possible to easily and reliably manufacture a high-quality semiconductor crystal wafer.

Further , according to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, by forming the wire support portion into a pair of rods, a plurality of wires can be supported at the same position at the same time.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, it is possible to efficiently, easily and reliably manufacture a high-quality semiconductor crystal wafer.
Further, according to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, by forming support grooves corresponding to a plurality of convex portions of the grooved drum grindstone on the entire side surface of the rod body, when the orbiting wire is cut. It can be reliably supported without lateral displacement.
As described above, according to the semiconductor crystal wafer manufacturing apparatus of the fourth invention, it is possible to easily and reliably and more stably manufacture a high-quality semiconductor crystal wafer.

The semiconductor crystal wafer manufacturing apparatus of the fifth invention is described in the fourth invention.
The wire support portion is characterized in that the rod body is rotatably configured in a no-load state via a bearing.

According to the semiconductor crystal wafer manufacturing apparatus of the fifth invention, the rod body is configured to be rotatable in a non-load state via a bearing, so that the wire can be reliably supported while maintaining the orbiting speed of the wire. can. In addition, it is possible to prevent the wire from being cut into the rod body.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the fifth invention, it is possible to easily and reliably and stably manufacture a high-quality semiconductor crystal wafer.

The semiconductor crystal wafer manufacturing apparatus of the sixth invention is a semiconductor crystal wafer manufacturing apparatus for cutting a wafer into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A drum grindstone for forming a plurality of concave grooves that go around the entire side surface of the semiconductor crystal ingot, and a grooved drum grindstone in which a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface.
A wire saw portion that advances and cuts a plurality of wires arranged in the plurality of concave grooves while rotating the semiconductor crystal ingot having a plurality of concave grooves formed on the entire side surface by the drum grindstone.
A wire support portion that supports the wire in the traveling direction at both ends of the contact portion between the wire and the semiconductor crystal ingot of the wire saw portion.
Equipped with
The wire support portion is characterized in that it travels along the outer shape of the side surface of the semiconductor crystal ingot.

According to the semiconductor crystal wafer manufacturing apparatus of the sixth invention, the wire support portion is always positioned at both ends of the contact portion between the wire and the semiconductor crystal ingot by advancing the wire support portion along the side outer shape of the semiconductor crystal ingot. Can be made to.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the sixth invention, it is possible to realize that a high quality semiconductor crystal wafer can be actually manufactured efficiently, easily and surely.

The device for manufacturing a conductor crystal wafer of the seventh invention is a device for manufacturing a semiconductor crystal wafer that cuts a wafer into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A drum grindstone for forming a plurality of concave grooves that go around the entire side surface of the semiconductor crystal ingot, and a grooved drum grindstone in which a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface.
A wire saw portion that advances and cuts a plurality of wires arranged in the plurality of concave grooves while rotating the semiconductor crystal ingot having a plurality of concave grooves formed on the entire side surface by the drum grindstone.
A wire support portion for supporting the wire in the traveling direction is provided at both ends of the contact portion between the wire of the wire saw portion and the semiconductor crystal ingot.
The wire support portion is characterized in that it advances in conjunction with the displacement of the wire saw portion in the traveling direction of the wire.

According to the semiconductor crystal wafer manufacturing apparatus of the seventh invention, the positional relationship in the traveling direction can be maintained by linking the displacement amount in the traveling direction of the wire and the displacement amount in the traveling direction of the wire support portion, and the wire can always be maintained. Can be stably supported with a certain bearing capacity.

As described above, according to the semiconductor crystal wafer manufacturing apparatus of the seventh invention, a high quality semiconductor crystal wafer can be easily and surely and stably manufactured.

The flowchart which shows the whole process of the manufacturing method of the SiC wafer (semiconductor crystal wafer) of this embodiment. It is explanatory drawing which shows the content of the groove processing process in the manufacturing method of the SiC wafer of FIG. The explanatory view which shows the content of the cutting process in the manufacturing method of the SiC wafer of FIG. The explanatory view which shows the content of the cutting process of FIG. It is explanatory drawing which shows the contents of the 1st surface processing process and the 2nd surface processing process in the manufacturing method of the SiC wafer of FIG.

As shown in FIG. 1, in the present embodiment, the method for manufacturing a SiC wafer, which is a semiconductor crystal wafer, is a SiC wafer obtained by removing undulations on one surface of a wafer cut into slices from a SiC ingot ground into a cylindrical shape. The groove processing step (STEP110 / FIG. 1), the cutting process (STEP120 / FIG. 1), the first surface processing step (STEP130 / FIG. 1), and the second surface processing step (STEP150 / FIG. 1) and.

The details of each process and the apparatus used in each process will be described with reference to FIGS. 2 to 5.

First, in the groove processing step of STEP 100 shown in FIG. 2, a cylindrical SiC ingot 10 obtained by subjecting a pre-crystallized SiC crystal to a cylindrical grinding process in which a crystal orientation is determined in the ingot processing step is prepared. ..

Then, in the grooving step of STEP 100, a plurality of concave grooves 11 are formed around the entire side surface of the SiC ingot 10.

Specifically, in the grooving process of STEP 100, the grooving drum grindstone 20 having the convex portion 21 corresponding to the concave groove 11 formed on the side surface is pressed against the SiC ingot 10 while rotating on the rotation axes parallel to each other. The concave groove 11 is formed by the above method.

It is desirable that the SiC ingot 10 (particularly the concave groove 11) obtained by the groove processing step is subjected to non-damage mirror surface processing by a chemical treatment method.

Next, in the cutting step of STEP 110 shown in FIG. 3, the SiC ingot 10 is cut into slices by a plurality of wires 31 arranged in the plurality of concave grooves 11 formed in the grooving step to obtain a SiC wafer 100. ..

Specifically, in the cutting step, in the wire saw device, which is a cutting processing device, the wire saw portion 30 aligns the plurality of wires 31 with the plurality of concave grooves 11 formed in the groove processing step, and circulates the wires 31. By advancing, the SiC ingot 10 is cut into slices.

A plurality of concave bobbin grooves corresponding to the plurality of convex portions 21 are formed on the entire side surface of the wire saw bobbin 32 that circulates the wire 31. Further, the SiC ingot 10 is fitted and fixed to the slice base 35 into which the SiC ingot 10 is fitted via an adhesive or the like.

At this time, the wire support portion 40 included in the wire saw device supports the wire 31 in the traveling direction at both ends of the contact portion between the wire 31 and the SiC ingot 10.

More specifically, the wire support portion 40 is a pair of cylindrical rods 41, 41 arranged parallel to the axial direction of the SiC ingot 10, and the bearings of the rod 41 are attached to both ends of the rod 41. 42, 42 (for example, ball bearings) are provided. The bearings 42 and 42 rotatably configure the rod 41 in a no-load state.

Further, a concave support groove corresponding to a plurality of convex portions 21 of the grooved drum grindstone 20 is formed on the entire side surface of the rod body 41.

Here, the wire saw bobbin 32 of the wire saw portion 30 and the rod body 41 of the wire support portion 40 are supported by a frame and a frame operating means (not shown, respectively), and the wire 31 (wire saw bobbin 32) is as follows. And the wire support portion 40 proceed to operate.

First, the wire support portion 40 (rod body 41) advances so that the amount of displacement in the traveling direction of the wire 31 and the amount of displacement in the traveling direction of the wire support portion 40 are interlocked with each other. As a result, the positional relationship between the wire 31 and the wire support portion 40 (bar 41) in the traveling direction is maintained.

Further, as shown in FIG. 4, the wire support portion 40 advances along the outer shape of the side surface of the SiC ingot 10.

The traveling operation of the wire saw bobbin 32 and the wire support portion 40 may be stored and held in the frame operating means by teaching in advance according to the SiC ingot 10, and is stored from the operation data table according to the standard dimensions of the SiC ingot 10. It may be configured to read the operation data by selecting the operation progress.

According to the wire saw device in which the wire support portion 40 is configured in addition to the wire saw portion 30 as described above, a plurality of wires 31 can be simultaneously supported at the same position by the rod body 41.

Further, since the rod body 41 is configured to be rotatable via the bearing 42 in a state of no load, the wire 31 can be reliably supported while maintaining the circumferential speed of the wire 31. In addition, it is possible to prevent the wire 31 from being cut into the rod 41.

Further, the rod body 41 has the same support groove as the concave groove 11 of the SiC ingot 10 formed on the entire side surface, and the wire saw bobbin 32 also has the same bobbin groove as the concave groove 11. Therefore, in addition to reliably positioning the rotating wire 31 in the concave groove 11 by the bobbin groove, the support groove can reliably support the wire 31 without lateral displacement during cutting.

In addition, the wire support portion 40 is advanced along the outer shape of the side surface of the SiC ingot 10 while interlocking with the displacement of the wire 31 of the wire saw portion 30 in the traveling direction, so that the contact portion between the wire and the SiC ingot 10 is formed. Wire supports can always be located at both ends.

The wire 31 and the wire support portion 40 finally proceed along the slicing base 35, and even if the SiC ingot 10 is cut completely, the wire 31 remains on the slicing base, so that the SiC ingot 10 is cut. It is possible to prevent peeling of the end portion.

As a result, since both ends of the contact portion with the SiC ingot 10 are always supported by the wire support portion 40, the wire 31 prevents the wire 31 from forming a bow at the contact portion and maintains a state close to horizontal. can do.

As a result, it is possible to prevent the wire from forming a bow during cutting and biasing the cutting stress toward both ends, and to realize a cut surface without waviness or streaks.

As described above, the SiC ingot 10 can be accurately cut into slices with a plurality of wires 31 accurately arranged in the plurality of concave grooves 11 at one time, and there is no need to perform a chamfering process again.

Next, as shown in FIG. 5 , in the first surface processing step of STEP 120, one surface 110 of one of the cut surfaces is used as a support surface, and the remaining other surface 120 is mechanically polished (high-precision grinding).

Specifically, in the first surface processing step, grinding is performed by a mechanical polishing device 50 (ultra-high synthetic high-precision grinding device) that performs mechanical polishing.

The mechanical polishing device 50 includes a spindle 51 and a diamond grindstone 53 on a platen 52 which is a surface plate.

First, the other surface 120 is ground by the diamond grindstone 53 with the one surface 110 as the upper surface and the vacuum porous chuck 54 which is the suction plate of the spindle 51 sucking and supporting the other surface 120 as the lower surface.

At this time, the spindle 51 and the diamond grindstone 53 are rotationally driven by a drive device (not shown), and the other surface 120 remaining when the spindle 51 is pressed against the diamond grindstone 53 by a compressor (not shown) or the like is ground. ..

After the grinding process, the diamond grindstone 53 may be dressed with a dresser or the like.

Further, the mechanical polish device 50 may have a functional water supply pipe so that a plurality of functional waters can be used at the time of processing, if necessary.

Next, in the second surface processing step of STEP 130, the other surface 120 that has been subjected to high-precision grinding by the first surface processing step is set as the upper surface, and the one surface 110 has the same high accuracy as the first surface processing step. Grind.

That is, the other surface 120 is used as the upper surface, and the vacuum porous chuck 54, which is the suction plate of the spindle 51, is attracted to the vacuum porous chuck 54, and the one surface 110 is used as the lower surface, and the one surface 110 is ground by the diamond grindstone 53.

In this case as well, dressing may be applied by pressing a dresser or the like against the diamond grindstone 53, if necessary.

According to the mechanical polish (high-precision grinding) treatment of the first surface processing step of STEP120 and the second surface processing step of STEP130, one of the cut surfaces having high flatness obtained by the cutting step is supported. By sequentially applying mechanical polish (high-precision grinding) to the remaining surface as the (adsorption surface), so-called transfer can be prevented and a high-quality SiC wafer can be obtained, and conventional free grindstone processing can be obtained. That is, a complicated manufacturing process such as a plurality of primary to quaternary wraps can be greatly simplified.

More specifically, it is not necessary to change the grindstone to perform rough grinding or finish grinding a plurality of times. For example, it is simple because the grindstone of # 30,000 or more can directly grind to finish by one grind. Not only that, it has the advantage of being able to secure a large intrinsic semiconductor layer that can be used from the SiC wafer 100.

In the high-precision grinding process of the first surface processing step of STEP120 and the second surface processing process of STEP130, the size of the SiC wafer 100 is currently up to 8 inches, and the wafer of each diameter depends on the area of the head. Is set and high precision grinding process (up to 12 inches is possible) is performed.

The above is the details of the method for manufacturing a SiC wafer according to this embodiment. As described in detail above, according to the method for manufacturing a SiC wafer according to the present embodiment, it is possible to easily and reliably manufacture a high-quality SiC wafer.

In the method for manufacturing a SiC wafer of the present embodiment, a chemical mechanical polishing (CMP) step or a wafer cleaning step may be performed after the above-mentioned series of treatments, if necessary.

Further, in the present embodiment, a case where a SiC wafer is manufactured from a SiC ingot has been described as a method for manufacturing a semiconductor crystal wafer, but the semiconductor crystal is not limited to SiC, and the semiconductor crystal is not limited to SiC. Other compound semiconductors may be used.

1 ... SiC crystal (semiconductor crystal), 10 ... SiC ingot (semiconductor crystal ingot), 11 ... concave groove, 20 ... grooved drum grindstone, 21 ... convex part, 30 ... wire saw part (wire saw device), 31 ... wire , 32 ... wire saw bobbin, 35 ... slice base, 40 ... wire support (wire saw device), 41 ... rod, 42 ... bearing, 50 ... mechanical polishing device (ultra-high synthetic high precision grinding device), 51 ... Spindle, 52 ... Platen, 53 ... Diamond grindstone, 54 ... Vacuum porous chuck (suction plate), 100 ... SiC wafer (semiconductor crystal wafer), 110 ... One side, 120 ... Other side.

Claims (7)

A method for manufacturing a semiconductor crystal wafer, in which a wafer is cut into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A grooving step of forming a plurality of concave grooves orbiting the entire side surface of the semiconductor crystal ingot, and
A cutting step of cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in a plurality of concave grooves formed in the groove processing step to obtain a semiconductor crystal wafer.
Equipped with
In the cutting step, when the semiconductor crystal ingot is cut into slices by advancing while rotating a plurality of wires arranged in the plurality of concave grooves formed in the groove processing step, the wire and the semiconductor are used. It is supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot.
The wire support portion is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot, and the pair of rods is a grooved drum grindstone forming the plurality of concave grooves. A method for manufacturing a semiconductor crystal wafer, characterized in that support grooves corresponding to a plurality of convex portions of the above are formed on the entire side surface. A method for manufacturing a semiconductor crystal wafer, in which a wafer is cut into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A grooving step of forming a plurality of concave grooves orbiting the entire side surface of the semiconductor crystal ingot, and
A cutting step of cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in a plurality of concave grooves formed in the groove processing step to obtain a semiconductor crystal wafer.
Equipped with
In the cutting step, when the semiconductor crystal ingot is cut into slices by advancing while rotating a plurality of wires arranged in the plurality of concave grooves formed in the groove processing step, the wire and the semiconductor are used. It is supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot.
A method for manufacturing a semiconductor crystal wafer, wherein the wire support portion advances along the outer shape of the side surface of the semiconductor crystal ingot. A method for manufacturing a semiconductor crystal wafer, in which a wafer is cut into slices from a semiconductor crystal ingot ground into a cylindrical shape.
A grooving step of forming a plurality of concave grooves orbiting the entire side surface of the semiconductor crystal ingot, and
A cutting step of cutting the semiconductor crystal ingot into slices with a plurality of wires arranged in a plurality of concave grooves formed in the groove processing step to obtain a semiconductor crystal wafer.
Equipped with
In the cutting step, when the semiconductor crystal ingot is cut into slices by advancing while rotating a plurality of wires arranged in the plurality of concave grooves formed in the groove processing step, the wire and the semiconductor are used. It is supported by wire support portions that support the wire in the traveling direction at both ends of the contact portion with the crystal ingot.
A method for manufacturing a semiconductor crystal wafer , wherein the wire support portion advances in conjunction with displacement of the wire in the traveling direction. A semiconductor crystal wafer manufacturing device that cuts wafers into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape.
A drum grindstone for forming a plurality of concave grooves that go around the entire side surface of the semiconductor crystal ingot, and a grooved drum grindstone in which a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface.
A wire saw portion that advances and cuts a plurality of wires arranged in the plurality of concave grooves while rotating the semiconductor crystal ingot having a plurality of concave grooves formed on the entire side surface by the drum grindstone.
A wire support portion for supporting the wire in the traveling direction is provided at both ends of the contact portion between the wire of the wire saw portion and the semiconductor crystal ingot.
The wire support portion is a pair of cylindrical rods arranged parallel to the axial direction of the semiconductor crystal ingot, and the pair of rods has a plurality of protrusions of the grooved drum grindstone over the entire side surface. A semiconductor crystal wafer manufacturing apparatus characterized in that a support groove corresponding to a portion is formed. In the semiconductor crystal wafer manufacturing apparatus according to claim 4,
The wire support portion is a semiconductor crystal wafer manufacturing apparatus characterized in that the rod body is rotatably configured in a no-load state via a bearing. A semiconductor crystal wafer manufacturing device that cuts wafers into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape.
A drum grindstone for forming a plurality of concave grooves that go around the entire side surface of the semiconductor crystal ingot, and a grooved drum grindstone in which a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface.
A wire saw portion that advances and cuts a plurality of wires arranged in the plurality of concave grooves while rotating the semiconductor crystal ingot having a plurality of concave grooves formed on the entire side surface by the drum grindstone.
A wire support portion for supporting the wire in the traveling direction is provided at both ends of the contact portion between the wire of the wire saw portion and the semiconductor crystal ingot.
The wire support portion is an apparatus for manufacturing a semiconductor crystal wafer, characterized in that the wire support portion travels along the outer shape of the side surface of the semiconductor crystal ingot. A semiconductor crystal wafer manufacturing device that cuts wafers into slices from a semiconductor crystal ingot that has been ground into a cylindrical shape.
A drum grindstone for forming a plurality of concave grooves that go around the entire side surface of the semiconductor crystal ingot, and a grooved drum grindstone in which a plurality of convex portions corresponding to the plurality of concave grooves are formed on the side surface.
A wire saw portion that advances and cuts a plurality of wires arranged in the plurality of concave grooves while rotating the semiconductor crystal ingot having a plurality of concave grooves formed on the entire side surface by the drum grindstone.
A wire support portion for supporting the wire in the traveling direction is provided at both ends of the contact portion between the wire of the wire saw portion and the semiconductor crystal ingot.
The wire support portion is a semiconductor crystal wafer manufacturing apparatus, characterized in that the wire support portion advances in conjunction with a displacement of the wire saw portion in the traveling direction of the wire.

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