CN108262678B - Silicon wafer grinding device and grinding method thereof - Google Patents
Silicon wafer grinding device and grinding method thereof Download PDFInfo
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- CN108262678B CN108262678B CN201611264423.XA CN201611264423A CN108262678B CN 108262678 B CN108262678 B CN 108262678B CN 201611264423 A CN201611264423 A CN 201611264423A CN 108262678 B CN108262678 B CN 108262678B
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- silicon wafer
- grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention provides a silicon wafer grinding device and a grinding method thereof, wherein the silicon wafer grinding device comprises: the grinding device comprises a plurality of planetary wheels, an outer gear, a sun gear, two grinding discs and a driving device; the sun gear is arranged on the inner side of the outer gear, each planetary gear is arranged between the sun gear and the outer gear, and each planetary gear is meshed with both the sun gear and the outer gear; the two grinding discs are respectively arranged on two sides of the sun wheel and cover all the planetary wheels; two abrasive disks and sun gear all are connected with drive arrangement, and drive arrangement is used for driving two abrasive disks and the sun gear rotates. In the silicon wafer grinding device provided by the invention, the two grinding discs are used for grinding a plurality of silicon wafers simultaneously, so that the grinding efficiency is improved, and the plurality of wandering star wheels with different thicknesses are arranged, so that the silicon wafers can be ground at least once according to the bending degree of the surfaces of the silicon wafers and the thicknesses of the silicon wafers, and the grinding efficiency is improved and the grinding quality is also ensured by using the device.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a silicon wafer grinding device and a silicon wafer grinding method.
Background
Semiconductor silicon wafers are the main substrate material of modern very large scale integrated circuits and are generally manufactured by processes of slicing, lapping and the like.
In the semiconductor silicon wafer slicing process, generally, straight steel wires of 0.16mm and 0.14mm and abrasive grains (SiC) dissociated on the straight steel wires are used for cutting, and because the abrasive grains are dissociated, the cutting time is long, and the processing efficiency is low.
In the prior art, when a silicon wafer is ground, a pair of diamond grinding wheels rotate in opposite directions and feed along the axial direction under the drive of an air bearing electric spindle in a holding ring of a clamp holder, wherein the silicon wafer is symmetrically distributed, so that the two sides of the silicon wafer are ground simultaneously. However, this method has low polishing efficiency and is difficult to modify the bow (bow) and warp (warp) of the silicon wafer.
Disclosure of Invention
The invention aims to provide a silicon wafer grinding device and a silicon wafer grinding method, which aim to solve the problem of low silicon wafer processing efficiency in the prior art.
In order to solve the above technical problem, an aspect of the present invention provides a silicon wafer polishing apparatus, including: the grinding device comprises a plurality of planetary wheels, an outer gear, a sun gear, two grinding discs and a driving device;
the sun gear is arranged on the inner side of the outer gear, each planetary gear is arranged between the sun gear and the outer gear, and each planetary gear is meshed with both the sun gear and the outer gear;
the two grinding discs are respectively arranged on two sides of the sun wheel and cover all the planetary wheels;
the two grinding discs and the sun wheel are connected with the driving device, and the driving device is used for driving the two grinding discs and the sun wheel to rotate.
Optionally, the thickness of at least one of the plurality of planetary wheels is different from the thickness of the rest of the planetary wheels.
Optionally, the thicknesses of the plurality of planetary gears are all different, and the plurality of planetary gears are sequentially arranged between the sun gear and the outer gear according to the descending order of the thicknesses.
Optionally, the thickness distribution of the plurality of planetary gears is in an arithmetic progression, and the range of the thickness difference is 4-6 μm.
Optionally, each planetary wheel has a silicon wafer accommodating cavity for accommodating a silicon wafer.
Optionally, the grinding device further comprises an air cylinder, wherein the air cylinder is connected with any one of the grinding discs and is used for applying pressure to the grinding disc.
In order to solve the above technical problems, another aspect of the present invention provides a silicon wafer polishing method, in which the silicon wafer is polished at least once by using the above silicon wafer polishing apparatus.
Optionally, the silicon wafer is formed by cutting a crystal bar by using a diamond wire, and the diamond wire is cooled by using a cooling liquid in the process of cutting the crystal bar into the silicon wafer by using the diamond wire.
Optionally, the method for grinding the silicon wafer at least once comprises the following steps:
according to the thickness of the silicon wafer, a silicon wafer is arranged in each wandering star wheel, two faces of the silicon wafer arranged in the wandering star wheel are simultaneously ground by utilizing two grinding discs, and the rotating directions of the two grinding discs are opposite.
Optionally, the process of grinding the silicon wafer at least once further includes: and spraying grinding mortar on the silicon wafer.
Optionally, when the silicon wafer is ground at least twice, the method includes, between two adjacent grindings: and turning over the silicon wafer.
In the silicon wafer grinding device provided by the invention, the two grinding discs are used for grinding a plurality of silicon wafers simultaneously, the grinding efficiency is improved, and the thicknesses of the planetary wheels are different, so that the silicon wafers can be ground at least once according to the bending degree of the surfaces of the silicon wafers and the thicknesses of the silicon wafers. In the silicon wafer grinding method provided by the invention, firstly, the diamond wire is utilized to shorten half of the processing time, after the cutting speed is rapidly increased, the core part of the crystal bar still tends to be difficult to dissipate heat, and the problems of the silicon wafer bow and warp caused by thermal stress are solved, so that the quality of the silicon wafer is further ensured by combining a double-sided grinding process; the two grinding discs can grind a plurality of silicon wafers at the same time, so that the grinding efficiency is improved; in addition, when the silicon wafer is ground for multiple times, the silicon wafer is turned, and the grinding quality is further improved.
Drawings
FIG. 1 is a schematic illustration of a slice of an ingot according to an embodiment of the invention;
FIG. 2 is a schematic view of a silicon wafer polishing process according to one embodiment of the present invention;
in the figure: 1-diamond wire; 2-a crystal bar; 3-a guide wheel; 4-a silicon wafer; 5-a wandering star wheel; 6-an external gear; 7-sun gear.
Detailed Description
The silicon wafer polishing apparatus and the polishing method thereof according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Example one
Referring to fig. 1, a schematic view of a slice of an ingot 2 is shown. The diamond wire 1 is wound on the guide wheel 3 and moves at a high speed on the guide wheel 3, the crystal bar 2 is applied to the diamond wire 1 under the action of external force, and the crystal bar 2 is cut into a plurality of silicon wafers by utilizing the diamond wire 1 moving at a high speed.
Wherein, the diamond wire 1 is provided with abrasive grains, and the wire diameter is 0.12mm-0.15 mm.
Referring to fig. 2, there is shown a schematic view of a silicon wafer polishing apparatus, including: a plurality of planetary gears 5, an external gear 6, a sun gear 7, two grinding disks (not shown) and a driving device (not shown).
The sun gear 7 is arranged on the inner side of the outer gear 6, each planetary gear 5 is arranged between the sun gear 7 and the outer gear 6, and each planetary gear 5 is meshed with both the sun gear 7 and the outer gear 6; the two grinding discs are respectively arranged on two sides of the sun wheel 7 and cover all the planetary wheels 5; thereby ensuring that the grinding disc can grind the silicon wafers 4 in all the wandering star wheels 5.
Further, the drive means is used to drive both grinding disks as well as the sun wheel 7. Specifically, the two grinding disks and the sun gear 7 are both connected with a driving device, and the driving device can be a servo motor and simultaneously drives the two grinding disks and the sun gear 7 through a gear and a transmission shaft. For the convenience of control, the driving device can also be three servo motors which respectively drive the two grinding discs and the sun wheel 7. Since each planetary gear 5 meshes with both the sun gear 7 and the outer gear 6, when the sun gear 7 is driven by the driving device to rotate, the planetary gear 5 is driven to rotate, and the outer gear 6 is fixed to assist the planetary gear 5 to rotate.
In order to realize the grinding effect, the air cylinder can be used for applying pressure to the grinding discs when the grinding discs are ground, so that the two grinding discs are pressed on the silicon wafer 4, and meanwhile, the two surfaces of the silicon wafer 4 are ground. Wherein the air cylinder can be connected with any grinding disc.
Further, the middle part of each planetary wheel 5 is provided with a silicon wafer accommodating cavity for accommodating the silicon wafer 4.
Further, the thickness of at least one of the free-star wheels 6 is different from the thickness of the rest of the free-star wheels 6, so that the silicon wafers with different thicknesses can be ground.
Preferably, all the planetary wheels 5 have different thicknesses, and all the planetary wheels 6 are arranged between the sun wheel 7 and the outer wheel 6 in sequence according to the decreasing thickness order. Preferably, the thickness distribution of all the planetary wheels 6 is in an arithmetic progression, the thickness difference being in the range of 4 μm to 6 μm. Due to the uneven thickness of the silicon wafers, if the wandering star wheel 6 with the same thickness is adopted, the grinding requirements of all the silicon wafers are difficult to guarantee. For example, when the silicon wafer is thinner and is placed in the planetary wheel 6 with the same thickness, the boundary of the silicon wafer accommodating cavity of the planetary wheel 6 can block the grinding disc from grinding the silicon wafer, so that the silicon wafer bow and warp are difficult to repair; the thicker silicon wafer can cause over grinding, and the grinding time is wasted; after the planetary wheel 6 with the thickness decreasing is adopted, the silicon wafers can be placed in the appropriate planetary wheel 6 according to the thickness of the silicon wafers, if bow and warp of the silicon wafers cannot be repaired in one grinding process, the silicon wafers are placed in the thinner planetary wheel 6 to be ground for the second time until bow and warp of the silicon wafers can be repaired.
Example two
The embodiment provides a silicon wafer grinding method, which is used for grinding a silicon wafer at least once by adopting the silicon wafer grinding device in the first embodiment.
The processing of the silicon wafer generally comprises at least two steps of slicing and lapping, and after the silicon wafer grinding device in the first embodiment is used, the following steps can be taken to process the wafer:
s1: cutting the crystal bar into silicon chips by adopting a diamond wire;
s2: the silicon wafer grinding device is used for grinding the silicon wafer on two sides at least once.
Wherein, in the process of cutting the crystal bar into silicon wafers by adopting the diamond wire, the method further comprises the following steps: and cooling the diamond wire by using the cooling liquid. The cooling fluid may typically be a mixture of water and PG (propylene glycol), typically 5% to 10% propylene glycol, for lubrication.
The crystal bar is cut into silicon chips by using a diamond wire, the linear speed is high, and the following adjustments can be made in order to reduce the abrasion to the guide wheel: (1) thickening the guide wheel coating layer, and (2) reducing the size of the directional pulley for preventing the wire breakage of the wire releasing end.
Specifically, the method for grinding the silicon wafer on the double surfaces at least once comprises the following steps: according to the thickness of the silicon wafer, a silicon wafer is arranged in each wandering star wheel, the two grinding discs are used for carrying out double-side grinding on the silicon wafer arranged in the wandering star wheel, and the rotating directions of the two grinding discs are opposite. Meanwhile, the silicon wafer is driven by the sun gear to rotate around the sun gear, and the planetary gear rotates under the meshing action of the outer gear, so that the silicon wafer in the planetary gear can rotate and revolve around the sun gear in the grinding process.
Further, the process of carrying out at least one double-sided grinding on the silicon wafer also comprises the following steps: the grinding mortar is sprayed between the two grinding disks. The grinding mortar is prepared by 2000# SiC and propylene glycol suspension, and is sprayed on the surface of the silicon wafer through a pipeline.
Preferably, when the silicon wafer is subjected to double-side grinding at least twice, the method comprises the following steps between two adjacent double-side grinding: and for the silicon wafer turning, the flatness of the silicon wafer is improved by utilizing the inconsistent grinding speed of the upper disc and the lower disc, so that the grinding efficiency and the grinding quality of the silicon wafer are further improved.
The silicon wafer grinding method can be combined with a diamond wire slicing process, the processing time of cutting a crystal bar by using a diamond wire is shortened by half, after the cutting speed is rapidly increased, the heat dissipation of the core part of the crystal bar still tends to be difficult, the problems of the silicon wafer bow and warp caused by thermal stress are solved, the quality of the silicon wafer is ensured by further combining a double-sided grinding process, and the production efficiency of the silicon wafer is improved.
In the silicon wafer grinding device provided by the invention, the two grinding discs are used for grinding a plurality of silicon wafers simultaneously, the grinding efficiency is improved, and the thicknesses of the planetary wheels are different, so that the silicon wafers can be ground at least once according to the bending degree of the surfaces of the silicon wafers and the thicknesses of the silicon wafers, the bow degree (bow) and the warp degree (warp) of the silicon wafers are effectively trimmed, the silicon wafer grinding efficiency is improved, and the grinding quality is also ensured.
In the silicon wafer grinding method provided by the invention, the two grinding discs are utilized to grind a plurality of silicon wafers simultaneously, so that the grinding efficiency is improved; in addition, when the silicon wafer is ground for multiple times, the silicon wafer is turned, the grinding quality is further improved, and the production efficiency of the silicon wafer is increased by combining a diamond wire slicing process.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A silicon wafer polishing apparatus, comprising: the grinding device comprises a plurality of planetary wheels, an outer gear, a sun gear, two grinding discs and a driving device;
the sun gear is arranged on the inner side of the outer gear, each planetary gear is arranged between the sun gear and the outer gear, and each planetary gear is meshed with both the sun gear and the outer gear;
the two grinding discs are respectively arranged on two sides of the sun wheel and cover all the planetary wheels;
the two grinding discs and the sun wheel are both connected with the driving device, and the driving device is used for driving the two grinding discs and the sun wheel to rotate;
the thickness of at least one of the plurality of the planetary wheels is different from the thickness of the rest planetary wheels.
2. The silicon wafer polishing apparatus as set forth in claim 1, wherein the plurality of planetary gears are each formed in a different thickness, and are sequentially disposed between the sun gear and the outer gear in an order of decreasing thickness.
3. The silicon wafer polishing apparatus as set forth in claim 1, wherein the thickness distribution of the plurality of planetary wheels is in an arithmetic progression, and the thickness difference is in a range of 4 μm to 6 μm.
4. The wafer polishing apparatus as set forth in claim 1 wherein each of the wandering wheels has a wafer receiving chamber for receiving a wafer.
5. The silicon wafer polishing apparatus as claimed in claim 1, further comprising an air cylinder connected to any one of the polishing disks for applying pressure to the polishing disk.
6. A silicon wafer polishing method characterized by polishing a silicon wafer at least once by using the silicon wafer polishing apparatus according to any one of claims 1 to 5.
7. The silicon wafer grinding method according to claim 6, wherein the silicon wafer is formed by cutting the ingot with a diamond wire, and the diamond wire is cooled with a cooling liquid in the process of cutting the ingot into the silicon wafer with the diamond wire.
8. The silicon wafer polishing method according to claim 6, wherein the method of polishing the silicon wafer at least once comprises:
according to the thickness of the silicon wafer, a silicon wafer is arranged in each wandering star wheel, two faces of the silicon wafer arranged in the wandering star wheel are simultaneously ground by utilizing two grinding discs, and the rotating directions of the two grinding discs are opposite.
9. The silicon wafer polishing method according to claim 6, further comprising, during at least one polishing of the silicon wafer: and spraying grinding mortar on the silicon wafer.
10. The silicon wafer polishing method according to claim 6, wherein when said silicon wafer is polished at least twice, between adjacent two polishes: and turning over the silicon wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611264423.XA CN108262678B (en) | 2016-12-30 | 2016-12-30 | Silicon wafer grinding device and grinding method thereof |
| TW106125952A TW201822955A (en) | 2016-12-30 | 2017-08-01 | A wafer polishing apparatus and grinding method for wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611264423.XA CN108262678B (en) | 2016-12-30 | 2016-12-30 | Silicon wafer grinding device and grinding method thereof |
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| Publication Number | Publication Date |
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| CN108262678A CN108262678A (en) | 2018-07-10 |
| CN108262678B true CN108262678B (en) | 2021-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611264423.XA Active CN108262678B (en) | 2016-12-30 | 2016-12-30 | Silicon wafer grinding device and grinding method thereof |
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| Country | Link |
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| CN (1) | CN108262678B (en) |
| TW (1) | TW201822955A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109176300B (en) * | 2018-09-21 | 2020-10-13 | 广州半导体材料研究所 | Single-motor driving system for grinding mechanism of silicon wafer double-side grinding machine |
| CN109623629B (en) * | 2018-12-18 | 2019-09-27 | 浙江晶盛机电股份有限公司 | One kind automating polishing production line for hard material |
| CN110355616B (en) * | 2019-07-18 | 2021-01-26 | 浙江科惠医疗器械股份有限公司 | Magnetorheological polishing processing device for artificial knee joint tibial tray |
| CN114310654A (en) * | 2021-12-28 | 2022-04-12 | 海南钇坤智能科技有限公司 | Thickness adjusting process for fluorescent ceramic wafer |
| CN115026663B (en) * | 2022-06-30 | 2023-11-17 | 西安奕斯伟材料科技股份有限公司 | Polishing apparatus and polishing method |
Citations (6)
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| CN202185821U (en) * | 2011-07-22 | 2012-04-11 | 江阴市爱多光伏科技有限公司 | Silicon slice grinding device capable of reducing the pressure regulation time |
| CN103764348A (en) * | 2011-09-07 | 2014-04-30 | 3M创新有限公司 | Method of abrading a workpiece |
| CN104625940A (en) * | 2013-11-12 | 2015-05-20 | 昆山科尼电子器材有限公司 | Silicon wafer grinding and optical polishing system and machining technology thereof |
| CN104669106A (en) * | 2015-02-10 | 2015-06-03 | 盐城工学院 | Double-surface grinding and double-surface polishing high-efficiency ultraprecise processing method for large-sized A-directional sapphire mobile phone screen |
| CN204725301U (en) * | 2015-06-30 | 2015-10-28 | 深圳市悦目光学器件有限公司 | A kind of 2.5D glass grinding equipment integrating |
| CN105437078A (en) * | 2014-09-12 | 2016-03-30 | 南昌欧菲光学技术有限公司 | Grinding disc cleaning device |
-
2016
- 2016-12-30 CN CN201611264423.XA patent/CN108262678B/en active Active
-
2017
- 2017-08-01 TW TW106125952A patent/TW201822955A/en unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202185821U (en) * | 2011-07-22 | 2012-04-11 | 江阴市爱多光伏科技有限公司 | Silicon slice grinding device capable of reducing the pressure regulation time |
| CN103764348A (en) * | 2011-09-07 | 2014-04-30 | 3M创新有限公司 | Method of abrading a workpiece |
| CN104625940A (en) * | 2013-11-12 | 2015-05-20 | 昆山科尼电子器材有限公司 | Silicon wafer grinding and optical polishing system and machining technology thereof |
| CN105437078A (en) * | 2014-09-12 | 2016-03-30 | 南昌欧菲光学技术有限公司 | Grinding disc cleaning device |
| CN104669106A (en) * | 2015-02-10 | 2015-06-03 | 盐城工学院 | Double-surface grinding and double-surface polishing high-efficiency ultraprecise processing method for large-sized A-directional sapphire mobile phone screen |
| CN204725301U (en) * | 2015-06-30 | 2015-10-28 | 深圳市悦目光学器件有限公司 | A kind of 2.5D glass grinding equipment integrating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108262678A (en) | 2018-07-10 |
| TW201822955A (en) | 2018-07-01 |
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