JP2016203342A - Method for manufacturing truer and method for manufacturing semiconductor wafer, and chamfering device for semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a truer having a shape controlled with a high accuracy.SOLUTION: A method for manufacturing a truer which grinds and forms a peripheral edge part of a disk-like plate 10 in which abrasive grains are hardened by use of a cylindrical grind stone 20. The method is characterized that the disk-like plate 10 and the grind stone 20 are rotated in respective circumferential directions and one or both of the plate 10 and the grind stone 20 is moved so as to bring peripheral surfaces of the plate 10 and the grind stone 20 into contact with each other thereby grinding and forming the peripheral edge part of the plate 10 into a target shape.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method for producing a truer. The present invention also relates to a semiconductor wafer manufacturing method using the truer obtained by the truer manufacturing method, and also relates to a semiconductor wafer chamfering processing apparatus using the truer.

  Semiconductor wafers such as silicon wafers are widely used as semiconductor device substrates. For example, for a silicon wafer, lapping is performed on a wafer obtained by slicing a single crystal silicon ingot, and polishing is further performed to obtain a product. In particular, the peripheral edge is chamfered in order to prevent cracking or chipping at the peripheral edge of the wafer during conveyance or the like.

  Here, three typical chamfered shapes of the peripheral portion of the semiconductor wafer are shown in FIGS. For convenience, FIGS. 1A to 1C are referred to as a first shape, a second shape, and a third shape, respectively. The peripheral portion is composed of an end surface that is a peripheral surface of the wafer, an upper surface chamfered portion, and a lower surface chamfered portion. In the figure, t is the wafer thickness at the peripheral edge of the wafer, θ1 is the top chamfering angle, θ2 is the bottom chamfering angle, A1 is the top chamfering width, A2 is the bottom chamfering width, and B1 is B2 is the bottom surface thickness, R is the tip radius of curvature of the end surface, r1 is the radius of curvature of the top surface, r2 is the radius of curvature of the bottom surface, and BC is It is the length of the end face. The target shape of the peripheral edge of the semiconductor wafer is determined by determining each of the above parameters.

  A processing procedure for chamfering the peripheral edge of the semiconductor wafer into such a shape will be described with reference to FIGS. First, a disk-shaped plate 1 with hardened abrasive grains (FIG. 2 (A)), a metal bond roughing grindstone 2 (FIG. 2 (B)) in which grooves are formed in the plate 1 in advance, and a peripheral portion of a semiconductor wafer A polishing wheel 3 (FIG. 2 (D)) for polishing is prepared. The fine grinding stone 3 is a resin bond grindstone, and it is usual that a rounded initial groove is formed in advance as shown in the figure. This is because the resin-bonded grindstone is soft and intensively worn, so even if it is manufactured with good shape accuracy, the shape will quickly collapse when used. When the groove shape of the rough grinding stone 2 is chamfered to the plate 1 by chamfering the peripheral edge portion of the plate 1 using the rough grinding stone 2, the plate 1 becomes a truer 1A for truing the fine grinding stone 3. (FIGS. 2A to 2C). The groove of the fine grinding wheel is formed by truing the new groove of the fine grinding stone 3 using the truer 1A or the shape of the groove whose shape has been destroyed by use (FIGS. 2D to 2E). ). By polishing this peripheral edge of the semiconductor wafer using this fine grinding wheel 3, the shape of the peripheral edge of the semiconductor wafer is processed into a shape that matches the groove of the fine grinding stone 3, and the peripheral edge of the semiconductor wafer is chamfered. It will be. In general, a plurality of transfer grooves for the rough grinding stone 2 are provided so that different shapes of truers can be produced.

  An example of such a conventional truing method is described in Patent Document 1. That is, a wafer table that holds and rotates a wafer, a grindstone that chamfers the outer periphery of the wafer, a moving means that moves the wafer table relative to the grindstone, and a wafer that moves relative to the grindstone. Using a wafer chamfering device having a truing grindstone for forming a groove for chamfering the outer peripheral portion, the truing grindstone is mounted on a rotating shaft of the wafer table, and the end of the truing grindstone is rotated while rotating the truing grindstone. This is a truing method for a wafer chamfering grindstone in which the groove is formed by moving a portion relative to the grindstone by the moving means along a track corresponding to a chamfered shape of the outer peripheral portion of the wafer. In Patent Document 1, a wafer is chamfered using a grindstone obtained by this truing method.

  On the other hand, Patent Document 2 discloses a wafer chamfering method in which a peripheral edge portion of a semiconductor wafer is chamfered by chamfering without using a precision grinding wheel trued with a truer. That is, the wafer is centered and placed on a rotary table, and then rotated, and two grooveless grindstones for processing the rotating wafer are relatively close to each other at the same location on the peripheral edge of the wafer. A processing method for simultaneously forming and forming a position adjacent to the same portion of the peripheral edge of the wafer by the processing surface of the rotating grooveless grindstone, wherein the wafer outer diameter is ground and reduced in diameter. In the peripheral edge diameter reduction processing, the two groove-free grindstones are processed by bringing them into contact with the wafer while being held at a certain height, and the cross section of the peripheral edge of the wafer is formed into a desired shape. In the contouring process to be formed, each of the two grooveless grindstones is individually moved to each surface of the wafer peripheral end portion, and the same portion in the radial direction of the wafer peripheral end portion is sandwiched from above and below to each surface. same Processed into a wafer chamfering method.

JP 2007-61978 A JP 2008-177348 A

  In recent years when semiconductor devices are increasingly miniaturized, for example, the standard widths of the above-described lengths A1 and A2 and the standard widths of the above-mentioned chamfering angles θ1 and θ2 are reduced. It has become like this. In the chamfering of the peripheral edge of the wafer with the conventional fine grinding wheel described with reference to FIG. 2, the shape of the groove of the fine grinding stone is also rough because the transfer shape accuracy to the truer depends on the groove shape precision of the rough grinding stone. It depends on the groove shape accuracy of the grindstone. The shape of the peripheral edge of the semiconductor wafer is required to have a high accuracy on the order of several μm. On the other hand, a rough grinding stone which is a metal bond grinding stone is usually formed by electric discharge machining, so there is a limit to improvement in machining accuracy. Therefore, when further improvement in the processing accuracy of the chamfered shape of the peripheral edge of the semiconductor wafer is required in the future, it is expected that the requirement cannot be satisfied.

  SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a truer manufacturing method and a semiconductor wafer manufacturing method capable of chamfering a peripheral portion of a semiconductor wafer with high accuracy.

  The inventor examined wafer chamfering by contouring similar to that of Patent Document 2, and was able to confirm that the processing accuracy of the chamfered shape at the periphery of the semiconductor wafer can be improved as compared with the prior art. However, when the present inventors tried to mass-produce several hundred units or more by applying the technology, the shape of the peripheral edge of the semiconductor wafer deviated from the target shape as the chamfering process was advanced, and the processing accuracy was divergent. It was confirmed that it worsened. The inventor believes that this is because the axis of the stage for holding and rotating the wafer slightly expands due to overheating during polishing. Therefore, wafer chamfering by contouring is not suitable for mass production.

The present inventor examined wafer chamfering applicable to mass production, and instead of transferring the shape to the truer with a rough grinding wheel according to the prior art, the contour of the peripheral edge of a disk-shaped plate with hardened abrasive grains was used. The idea was to directly polish and form a truer. In order to complete the present invention, it is found that if the precision grinding wheel is trued using the truer, the groove shape of the precision grinding wheel can be controlled with high precision, and as a result, chamfering processing of the wafer peripheral edge can be realized with high precision. It came.
That is, the gist configuration of the present invention is as follows.

  The present invention relates to a truer manufacturing method in which a peripheral edge of a disc-shaped plate in which abrasive grains are hardened is polished using a grindstone, wherein the grindstone is cylindrical, and the disc-shaped plate and the grindstone are Rotate each circumferential direction, move one or both of the plate and the grindstone, bring the peripheral edge of the plate and the peripheral surface of the grindstone into contact with each other, and define the contour of the peripheral edge of the plate Abrasive molding to the target shape,

  In this case, prior to the polishing molding, it is preferable that the peripheral edge of the disk-shaped plate is coarsely polished using a rough grindstone.

  More preferably, the movement is NC controlled.

  Further, the method for producing a semiconductor wafer of the present invention uses a truer obtained by any of the above production methods to true a fine grinding wheel, and uses the fine grinding stone to chamfer the peripheral edge of the semiconductor wafer. It is characterized by doing.

  Here, the semiconductor wafer is preferably a silicon wafer.

Further, a semiconductor wafer chamfering apparatus according to the present invention includes a disk-shaped plate in which abrasive grains are hardened, a table on which the plate is placed, lifting and lowering of the table, horizontal movement, and circumferential direction of the plate. A driving mechanism that rotates, a cylindrical grindstone that polishes and forms the plate, a moving mechanism that rotates the grindstone in the circumferential direction and moves the grindstone, and a precision truing that is trued by the disc-shaped plate A grindstone, a rotation mechanism for rotating the precision grinding wheel, an exchange mechanism for exchanging the disk-shaped plate with a semiconductor wafer, a control unit for controlling the drive mechanism, the moving mechanism, the rotation mechanism, and the exchange mechanism; Have
The control unit controls the drive mechanism and the moving mechanism to rotate the disk-shaped plate and the grindstone in respective circumferential directions, and moves either or both of the plate and the grindstone. The peripheral edge of the plate and the peripheral surface of the grindstone are brought into contact with each other, the contour of the peripheral edge of the plate is polished and formed into a target shape, and the drive mechanism and the rotating mechanism are controlled to control the plate and the precision The polishing wheel is contacted while rotating in the circumferential direction to perform the truing, the exchange mechanism is controlled to exchange the plate and the semiconductor wafer, the drive mechanism and the rotation mechanism are controlled, and the semiconductor wafer and The peripheral edge of the semiconductor wafer is polished by contacting the fine grinding wheel while rotating it in the circumferential direction.

  According to the present invention, the contour of the peripheral portion of the disk-shaped plate in which the abrasive grains are hardened is directly polished and formed into a truer, so that a truer whose shape is controlled with high accuracy can be manufactured. Further, by using this truer, it is possible to manufacture a semiconductor wafer in which chamfering processing of the peripheral portion of the semiconductor wafer is controlled with high accuracy.

It is a schematic cross section which shows the typical chamfering shape of a general semiconductor wafer peripheral part, (A) shows a 1st shape, (B) shows a 2nd shape, (C) shows a 3rd shape. . It is a flowchart explaining to the groove forming of the fine grinding wheel for demonstrating the chamfering processing method of the peripheral part of the semiconductor wafer by a prior art. It is a model type sectional view explaining a manufacturing method of a truer by one embodiment of the present invention. FIG. 5 is a schematic cross-sectional view for explaining the operation of a disk-shaped plate and a grindstone in an embodiment of the present invention. It is a model perspective view of the grindstone used in one embodiment of the present invention. It is a schematic cross section explaining the target shape of the peripheral part of the silicon wafer in an example. It is a schematic diagram explaining the chamfering processing apparatus of the semiconductor wafer according to one Embodiment of this invention. It is a graph explaining the shape parameter of the peripheral part of the silicon wafer in an example, (A) shows A1, (B) shows A2, and (C) shows BC. It is a graph explaining the shape parameter of the peripheral part of the silicon wafer in an Example, (A) shows (theta) 1 and (B) shows (theta) 2.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In principle, the same components are denoted by the same reference numerals, and description thereof is omitted. Further, in the drawings, the shapes of the disk-shaped plate 10, the grindstone 20, and the like are exaggerated and shown differently from the actual aspect ratio for convenience of explanation.

(Manufacturing method of truer)
The manufacturing method of the truer 10A which grind-molds the peripheral part of the disk-shaped board 10 which hardened the abrasive grain using the grindstone 20 by one Embodiment of this invention is demonstrated using FIGS. Although the details will be described later, the grindstone 20 has a cylindrical shape, the disc-shaped plate 10 and the grindstone 20 are rotated in the respective circumferential directions, and one or both of the plate 10 and the grindstone 20 are moved. It is a feature of the present embodiment that the peripheral edge portion of the plate 10 and the peripheral surface of the grindstone 20 are brought into contact with each other, and the contour of the peripheral edge portion of the plate 10 is polished to a target shape. For convenience of explanation, the right direction along the paper surface in FIG. 4 is defined as + y direction, and the opposite direction is defined as −y direction. Similarly, the upward direction along the paper surface is defined as the + z direction, and the opposite direction is defined as the -z direction. Hereinafter, details of each component will be described in order.

  First, the periphery of the disc-shaped plate 10 is roughly polished using a rough grinding wheel (not shown) (FIGS. 3A to 3B). The plate 10 is polished and molded by the operation of the plate 10 and the grindstone 20, which will be described later with reference to FIG. 4, to become a truer 10A (FIG. 3C). FIG. 3 shows a contour 10b after rough polishing of the plate 10 and a contour 10a of the truer 10A (that is, a contour 10a having a target shape when the plate 10 is polished and molded). In addition, what is necessary is just to determine arbitrarily the outline 10a of the target shape after grinding | polishing shaping | molding according to a desired shape. For example, the first shape to the third shape described above in FIG. 1 are arbitrarily selected, each parameter is appropriately determined, and the contour 10a is defined. Moreover, the area | region enclosed by the outline 10a and the outline 10b will correspond to the grinding | polishing allowance when it shape | molds by the operation | movement of the board 10 and the grindstone 20 shown in FIG.

  The operation of the plate 10 and the grindstone 20 will be described. While rotating the disk-shaped plate 10 and the grindstone 20 in the respective circumferential directions, the plate 10 is moved in the + y direction. The grindstone 20 is abutted and moved in the ± z direction, and the end surface of the plate 10 is uniformly polished in the −y direction (FIG. 4A). Next, the plate 10 is moved in the + y direction while moving the grindstone 20 in the + z direction while keeping the position in the z direction of the plate 10 at the reference position, and is moved to the upper surface side (+ z direction) of the peripheral portion of the plate 10. Move while abutting to chamfer the part. (FIG. 4B). Further, the grindstone 20 is moved while being brought into contact with the lower surface side (−z direction) of the peripheral edge of the plate 10 to chamfer the portion. (FIG. 4C). As described above, the contour of the peripheral edge of the plate 10 can be polished and formed into the contour 10a of the target shape, and the truer 10A whose shape is controlled with high accuracy can be manufactured.

  In the above embodiment, the position of the plate 10 in the z direction is fixed, and the grinding stone 20 is controlled to be moved in the z direction while being abutted and moved. However, either the plate 10 or the grindstone 20 is used. Alternatively, both may be moved as long as both are moved and the peripheral edge of the plate 10 and the peripheral surface of the grindstone 20 are brought into contact with each other. Further, the order of chamfering of the upper surface and the lower surface of the peripheral portion of the plate 10 is not limited, and the surface may be first polished from the lower surface side. Further, as shown in FIG. 4, the end surface of the plate 10 and the peripheral surface of the grindstone 20 do not need to contact at a right angle, and an angle may be appropriately provided on the contact surface.

  The rotation speed and movement amount of the plate 10 and the grindstone 20 can be arbitrarily determined. Although not intended to be limited, the rotation speed of the plate 10 is about 100 rpm to 1200 rpm, and the moving amount is about 10 μm to 200 μm. Although not intended to be limited, the rotational speed of the grindstone 20 is about 100 rpm to 800 rpm, and the moving amount is about 10 μm to 200 μm. By appropriately controlling the rotational speed and the amount of movement of the plate 10 and the grindstone 20, the load on both can be controlled.

  The abrasive grains constituting the plate 10 are, for example, SiC, diamond abrasive grains, etc., which are hardened into a disk shape using a conventional method. The plate 10 has a diameter approximately the same as that of a semiconductor wafer described later, and can be arbitrarily set within a range of, for example, a diameter of 200 mm to 450 mm, for example, 300 mm.

  The grindstone 20 can be composed of a diamond-bonded metal bond grindstone or the like, and the count can be arbitrarily set in the range of # 400 to # 8000, for example, # 1000. The diameter of the grindstone 20 can be arbitrarily set in the range of 30 mm to 100 mm, and the thickness can be arbitrarily set in the range of 3 mm to 15 mm.

  Although not shown, for example, if the disk-shaped plate 10 is placed on a rotatable and movable stage, the rotation of the plate 10 and the movement in the y direction can be arbitrarily controlled. Further, the rotation and movement of the grindstone 20 can be arbitrarily controlled using a precision grinding motor that can be moved up and down in the z-axis direction. For example, the rotational movement of the grindstone 20 can be controlled by providing the shaft portion 21 for rotating the grindstone 20 at the center of the grindstone 20 (FIG. 5). In the rotation and movement of the disk-shaped plate 10 and the grindstone 20, a general control method in the polishing technique can be applied.

  In the above embodiment, the disk-shaped plate 10 is roughly polished. However, depending on the shape of the disk-shaped plate 10 or the target polishing shape, rough polishing with a rough grindstone on the peripheral edge of the disk-shaped plate 10 is performed. Omitted and polishing molding by the above-described operation may be directly performed using FIG. This is the case, for example, when the grinding allowance by the grindstone 20 is 5 μm or less. Moreover, it is more preferable to perform NC control (numerical control) of the movement of the disk-shaped plate 10 and the grindstone 20. The shape of the truer 10A can be polished and molded with higher accuracy.

  Next, a semiconductor wafer obtained using the truer obtained by the above manufacturing method will be described. A method for manufacturing a semiconductor wafer according to the present embodiment is characterized in that a fine grinding stone is trued using the truer obtained by the above-described production method, and the peripheral edge of the semiconductor wafer is chamfered using the fine grinding stone. To do.

  Conventional techniques may be applied to truing the fine grinding wheel and chamfering the peripheral edge of the semiconductor wafer. For example, a semiconductor wafer can be chamfered using an edge grinding machine (W-GM-5200; manufactured by Tosei Engineering Co., Ltd.). Since the contour of the peripheral portion of the disc-shaped plate with hardened abrasive grains is directly polished and molded, the peripheral shape of the truer is controlled with high accuracy. Therefore, the groove shape of the precision grinding wheel trued with this truer is also formed with high accuracy. Therefore, by chamfering the peripheral portion of the semiconductor wafer using such a fine grinding wheel, a semiconductor wafer in which chamfering processing of the peripheral portion of the semiconductor wafer is controlled with high accuracy can be manufactured.

  As the semiconductor wafer 10, it is preferable to use a silicon wafer obtained by slicing a single crystal silicon ingot grown by the Czochralski method (CZ method) or the floating zone melting method (FZ method) with a wire saw or the like. An arbitrary dopant may be added to the semiconductor wafer 10 at a predetermined concentration to form a so-called n + type or p + type, or n− type or p− type substrate. In addition, a bulk single crystal wafer such as a compound semiconductor (GaAs, GaN, SiC) may be used as the semiconductor wafer 10. Further, the semiconductor wafer 10 may be provided with a notch or an orientation flat.

  Here, a semiconductor wafer chamfering apparatus according to an embodiment of the present invention will be described with reference to FIG. 7 showing a main part of the apparatus configuration.

  A chamfering apparatus 100 for a semiconductor wafer according to the present invention includes a disk-shaped plate (which becomes a truer 10A after polishing molding described later) with abrasive grains hardened, a table 41 on which the plate is placed, and an elevation and horizontal movement of the table 41. Drive mechanism 51 for moving the direction and rotating the plate in the circumferential direction, a cylindrical grindstone 20 for polishing the plate, and a moving mechanism for rotating the grindstone 20 in the circumferential direction and moving the grindstone 20 52, a fine grinding wheel 30 that is trued by the plate, a rotating mechanism 53 that rotates the fine grinding stone 30, an exchange mechanism 54 that replaces the disk-shaped plate 10A with a semiconductor wafer (not shown), and a drive mechanism 51, a moving mechanism 52, a rotating mechanism 53, and a control unit 50 that controls the exchanging mechanism 54.

  Here, the control unit 50 controls the driving mechanism 51 and the moving mechanism 52 to polish and form a disk-shaped plate on the above-described truer 10A. That is, the disk-shaped plate and the grindstone 20 are rotated in the respective circumferential directions, and one or both of the plate and the grindstone 20 are moved, and the peripheral portion of the plate and the circumferential surface of the grindstone 20 are moved. By bringing them into contact with each other, the contour of the peripheral edge of the plate is polished and formed into a target shape. The details are as described in the embodiment of the truer manufacturing method, and a duplicate description is omitted.

  Further, the control unit 50 controls the drive mechanism 51 and the rotation mechanism 53 so that the plate that has become the truer 10A (hereinafter simply referred to as the truer 10A) and the fine grinding wheel 30 are brought into contact with each other while rotating in the circumferential direction. Do truing. As a result, a groove having a target shape is formed in the fine grinding stone 30.

  Further, when polishing the semiconductor wafer, the control unit 50 controls the exchange mechanism 54 to exchange the truer 10A and the semiconductor wafer. Thereafter, the control unit 50 can control the driving mechanism 51 and the rotation mechanism 53 to bring the semiconductor wafer and the fine grinding stone 30 into contact with each other while rotating in the circumferential direction, thereby polishing the peripheral portion of the semiconductor wafer.

  Since the shape of the truer 10A is accurately formed by the processing apparatus described above, the peripheral portion of the semiconductor wafer can also be chamfered and polished with high accuracy. The chamfering apparatus 100 may further include a rough grinding stone and a notch or orientation flat forming grindstone, and may have a general configuration as a chamfering apparatus for a peripheral portion of a semiconductor wafer.

  The driving mechanism 51, the moving mechanism 52, the rotating mechanism 53, the exchanging mechanism 54, and the control unit 50 can be members commonly used in a chamfering apparatus, and include a motor, a gear, a bearing, a sensor, a CPU, and the like. They can be used in appropriate combinations.

(Invention example)
A disc-shaped plate (diameter: 304 mm, thickness: 1200 μm) in which SiC abrasive grains were hardened was prepared, and the peripheral edge portion was coarsely polished. The shape of the peripheral edge of the silicon wafer after chamfering is a substantially frustoconical shape with a flat end face with shape parameters A1 = 430 μm, A2 = 430 μm, BC = 500 μmm, θ1 = 21.5 degrees, and θ2 = 21.5 degrees. Fig. 6), and the peripheral shape of the truer was set according to the target value to obtain the true shape of the truer. Using a metal bond (diameter: 50 mm, thickness: 5 mm, count # 1000) grindstone, the plate shown in FIG. 4 using an EMTEK CVP310R so that the shape of the peripheral part of the truer becomes this target shape. The operations of the grinding wheel 10 and the grinding stone 20 were controlled by NC to perform polishing, and the contour of the peripheral edge of the disk-shaped plate was polished and molded to produce a truer. Polishing was performed under the same conditions to produce a total of five truers.

  Using this truer, five fine polishing grooves were formed on a resin bond precision grinding wheel (count: # 2000). Next, it was installed in an edge grinding machine (W-GM-5200; manufactured by Tosei Engineering Co., Ltd.), and a chamfering process was performed on the peripheral portion of the silicon wafer (diameter: 300 mm, thickness: 840 μm) using each groove. The shape parameters A1, A2, BC, θ1, and θ2 measured by using EdgeProfiler LEP-2200 (manufactured by Kobelco Kaken) are shown in FIGS. 8A to 8C and FIG. Shown in (A) and (B), respectively.

(Conventional example)
Eight grooves were provided in a metal bond roughing grindstone (counter: # 600) provided with the same true shape of the truer as in the invention example, and eight truers were produced using each groove. The peripheral edge of the silicon wafer is formed using each groove provided in the fine grinding wheel in the same manner as in the inventive example, except that eight grooves are provided in the fine grinding stone used in the invention example using these truers. Chamfering was performed. The shape parameters A1, A2, BC, θ1, and θ2 of the chamfered shapes of a total of eight silicon wafers are shown in FIGS. 8A to 8C and FIGS. 9A and 9B, respectively, together with the above-described invention.

  8 (A) to 8 (C) and FIGS. 9 (A) and 9 (B), when the invention example is compared with the conventional example, the fine grinding stone is trued using the truer according to the invention example. It was found that the variation in the shape of the peripheral edge portion of the silicon wafer chamfered by use can be significantly suppressed as compared with the conventional example. That is, in the invention example, A1, A2, and BC can be suppressed within ± 5 μm, and θ1 and θ2 can be within 0.3 degrees. Therefore, it was found that the shape of the peripheral portion of the silicon wafer can be controlled with high accuracy by the example of the present invention.

  According to the present invention, the contour of the peripheral portion of the disk-shaped plate in which the abrasive grains are hardened is directly polished and formed into a truer, so that a truer whose shape is controlled with high accuracy can be manufactured. Further, by using this truer, it is possible to manufacture a semiconductor wafer in which chamfering processing of the peripheral portion of the semiconductor wafer is controlled with high accuracy.

DESCRIPTION OF SYMBOLS 1 Disc-shaped board 1A Truer 2 Coarse grinding wheel 3 Precision grinding wheel 10 Disc-shaped board 10A Truer 20 Grinding wheel 21 Shaft part 30 Precision grinding stone 41 Table 50 Control part 51 Drive mechanism 52 Movement mechanism 53 Rotation mechanism 54 Exchange mechanism 100 Chamfering Processing equipment

Claims (6)

A method for producing a truer that polishes and forms the peripheral edge of a disk-shaped plate with hardened abrasive grains using a grindstone,
The grindstone is cylindrical,
The disk-shaped plate and the grindstone are rotated in the respective circumferential directions, and either one or both of the plate and the grindstone are moved so that the peripheral portion of the plate and the circumferential surface of the grindstone are in contact with each other. A method for producing a truer, wherein the contour of the peripheral edge of the plate is polished to a target shape.   The method for producing a truer according to claim 1, wherein, prior to the polishing and molding, a peripheral portion of the disk-shaped plate is roughly polished using a rough grinding stone.   The truer manufacturing method according to claim 1 or 2, wherein the movement is NC-controlled. Using the truer obtained by the manufacturing method according to any one of claims 1 to 3, truing a fine grinding wheel,
A method for producing a semiconductor wafer, comprising chamfering a peripheral portion of the semiconductor wafer using the fine grinding wheel.   The method of manufacturing a semiconductor wafer according to claim 4, wherein the semiconductor wafer is a silicon wafer. A disk-shaped plate with hardened abrasive grains;
A table on which the plate is placed;
A drive mechanism for moving the table up and down, moving in the horizontal direction, and rotating the plate in the circumferential direction;
A cylindrical grindstone for polishing and molding the plate;
A moving mechanism for rotating the grindstone in the circumferential direction and moving the grindstone;
A precision grinding wheel that is trued by the disk-shaped plate;
A rotation mechanism for rotating the precision grinding wheel;
An exchange mechanism for exchanging the disk-shaped plate with a semiconductor wafer;
A controller that controls the drive mechanism, the moving mechanism, the rotating mechanism, and the exchange mechanism;
The control unit controls the drive mechanism and the moving mechanism to rotate the disk-shaped plate and the grindstone in respective circumferential directions, and moves either or both of the plate and the grindstone. The peripheral edge of the plate and the peripheral surface of the grindstone are brought into contact with each other, and the contour of the peripheral edge of the plate is polished to a target shape,
Control the drive mechanism and the rotation mechanism, and perform the truing by contacting the plate and the fine grinding wheel while rotating in the circumferential direction,
Controlling the exchange mechanism to exchange the plate and the semiconductor wafer;
An apparatus for processing a semiconductor wafer, wherein the driving mechanism and the rotating mechanism are controlled so that the semiconductor wafer and the fine grinding wheel are brought into contact with each other while rotating in the circumferential direction to polish a peripheral portion of the semiconductor wafer.

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