TWI794427B - 半導體裝置及其調整方法 - Google Patents

半導體裝置及其調整方法 Download PDF

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Publication number
TWI794427B
TWI794427B TW108107120A TW108107120A TWI794427B TW I794427 B TWI794427 B TW I794427B TW 108107120 A TW108107120 A TW 108107120A TW 108107120 A TW108107120 A TW 108107120A TW I794427 B TWI794427 B TW I794427B
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TW
Taiwan
Prior art keywords
hall element
vertical hall
power supply
current
output
Prior art date
Application number
TW108107120A
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English (en)
Chinese (zh)
Other versions
TW201945752A (zh
Inventor
飛岡孝明
挽地友生
Original Assignee
日商艾普凌科有限公司
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Publication date
Application filed by 日商艾普凌科有限公司 filed Critical 日商艾普凌科有限公司
Publication of TW201945752A publication Critical patent/TW201945752A/zh
Application granted granted Critical
Publication of TWI794427B publication Critical patent/TWI794427B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/077—Vertical Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
    • G01R1/206—Switches for connection of measuring instruments or electric motors to measuring loads
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0038—Circuits for comparing several input signals and for indicating the result of this comparison, e.g. equal, different, greater, smaller (comparing pulses or pulse trains according to amplitude)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0029—Treating the measured signals, e.g. removing offset or noise
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/072—Constructional adaptation of the sensor to specific applications
    • G01R33/075—Hall devices configured for spinning current measurements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Magnetic active materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
TW108107120A 2018-03-14 2019-03-04 半導體裝置及其調整方法 TWI794427B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018046888 2018-03-14
JP2018-046888 2018-03-14
JP2018230554A JP7239308B2 (ja) 2018-03-14 2018-12-10 半導体装置及びその調整方法
JP2018-230554 2018-12-10

Publications (2)

Publication Number Publication Date
TW201945752A TW201945752A (zh) 2019-12-01
TWI794427B true TWI794427B (zh) 2023-03-01

Family

ID=68064770

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108107120A TWI794427B (zh) 2018-03-14 2019-03-04 半導體裝置及其調整方法

Country Status (3)

Country Link
JP (2) JP7239308B2 (ja)
KR (2) KR102632662B1 (ja)
TW (1) TWI794427B (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130342194A1 (en) * 2012-06-22 2013-12-26 Infineon Technologies Ag Vertical hall sensor with series-connected hall effect regions
US20140210461A1 (en) * 2013-01-29 2014-07-31 Infineon Technologies Ag Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582084A (ja) * 1981-06-26 1983-01-07 Toshiba Corp ホ−ル素子装置
DE10150955C1 (de) 2001-10-16 2003-06-12 Fraunhofer Ges Forschung Vertikaler Hall-Sensor
JP2008008883A (ja) 2006-06-02 2008-01-17 Denso Corp 磁気センサ及びセンサ
CH699933A1 (de) 2008-11-28 2010-05-31 Melexis Technologies Sa Vertikaler Hallsensor.
CN102820860A (zh) 2012-07-26 2012-12-12 上海新进半导体制造有限公司 霍尔电压传感器、放大器电路、测试电路及方法
JP5507744B2 (ja) 2013-07-09 2014-05-28 旭化成エレクトロニクス株式会社 ホール起電力検出装置および回転角度検出装置
JP2015078949A (ja) 2013-10-18 2015-04-23 旭化成エレクトロニクス株式会社 ホール起電力信号検出回路
JP6418965B2 (ja) 2015-01-28 2018-11-07 日置電機株式会社 ホール素子駆動回路およびセンサ回路
JP6618370B2 (ja) 2015-03-05 2019-12-11 エイブリック株式会社 磁気センサ回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130342194A1 (en) * 2012-06-22 2013-12-26 Infineon Technologies Ag Vertical hall sensor with series-connected hall effect regions
US20140210461A1 (en) * 2013-01-29 2014-07-31 Infineon Technologies Ag Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions

Also Published As

Publication number Publication date
JP7466617B2 (ja) 2024-04-12
JP2023029390A (ja) 2023-03-03
KR20190108513A (ko) 2019-09-24
JP2019164117A (ja) 2019-09-26
JP7239308B2 (ja) 2023-03-14
KR102632662B1 (ko) 2024-02-01
KR20230119084A (ko) 2023-08-16
TW201945752A (zh) 2019-12-01

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