TWI794408B - Substrate processing device, substrate processing method, and storage medium - Google Patents

Substrate processing device, substrate processing method, and storage medium Download PDF

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Publication number
TWI794408B
TWI794408B TW108104685A TW108104685A TWI794408B TW I794408 B TWI794408 B TW I794408B TW 108104685 A TW108104685 A TW 108104685A TW 108104685 A TW108104685 A TW 108104685A TW I794408 B TWI794408 B TW I794408B
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moving body
control command
unit
substrate
nozzle
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TW108104685A
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Chinese (zh)
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TW201937307A (en
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稻田博一
梶原英樹
永金拓
水篠真一
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日商東京威力科創股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/002Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005Spin coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/40Distributing applied liquids or other fluent materials by members moving relatively to surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An object of the invention is to provide a substrate processing device that is effective in improving the precision of a supply position of a process liquid to a peripheral section of a substrate. A coating and developing device 2 comprises: a removal liquid supply section 50 having a removal liquid nozzle 52 that discharges a removal liquid onto a peripheral section of a wafer W; a drive section 60 which moves a moving body 51 that includes the removal liquid nozzle 52; a sensor 70 that detects information relating to the position of the moving body 51; and a control section 100 that is configured to execute output of a control command to the drive section 60 so as to move the moving body 51 from a first position P1 at which the removal liquid nozzle 52 is positioned outside the periphery Wc of the wafer W to a second position P2 at which the removal liquid nozzle 52 is positioned above the peripheral part of the wafer W, and also to adjust the control command, based on the relationship between the control command and information detected by the sensor 70 during the movement of the moving body 51 from the first position P1 to the second position P2, so as to reduce how much the movement completion position of the moving body 51 deviates from the second position P2.

Description

基板處理裝置、基板處理方法及記錄媒體 Substrate processing apparatus, substrate processing method, and recording medium

本發明係關於基板處理裝置、基板處理方法及記錄媒體。 The present invention relates to a substrate processing device, a substrate processing method, and a recording medium.

專利文獻1揭示一種裝置,其具備:噴嘴機構,將形成於半導體基板周邊端部的藥劑膜溶解去除;感測器,裝設於噴嘴機構,檢測半導體基板周邊部的位置;驅動機構,使噴嘴機構移動;及控制系統,控制驅動機構,俾能根據感測器所檢測到的信號以期望寬度將藥劑膜的周邊部溶解去除。 Patent Document 1 discloses a device comprising: a nozzle mechanism for dissolving and removing the chemical film formed on the peripheral end of a semiconductor substrate; a sensor installed in the nozzle mechanism for detecting the position of the peripheral portion of the semiconductor substrate; a driving mechanism for driving the nozzle to The mechanism moves; and the control system controls the driving mechanism so that the peripheral part of the drug film can be dissolved and removed with a desired width according to the signal detected by the sensor.

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Document]

[專利文獻1]日本特開平7-142332號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 7-142332

本發明的目的在於提供一種基板處理裝置,其可有效提升處理液對基板周緣部之供給位置的精確度。 The object of the present invention is to provide a substrate processing apparatus, which can effectively improve the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

本發明之基板處理裝置,其具備:液體供給部,具有用以對基板的周緣部噴吐處理液的噴嘴;驅動部,使包括噴嘴之移動體移動;感測器,檢測有關移動體的位置的資訊;及控制部,執行下述步驟:將用以使移動體從噴嘴配置在基板的周緣外之第一位置移動至噴嘴配置在基板的周緣上之第二位置的控制指令,輸出至驅動部;及根據於移動體從第一位置往第二位置的移動途中由感測器所檢測到的資訊和控制指令的關係,修正控制指令,俾縮小移動體的移動結束位置和第二位置的偏差。 The substrate processing apparatus of the present invention includes: a liquid supply unit having a nozzle for spraying the processing liquid on the peripheral portion of the substrate; a drive unit for moving a moving body including the nozzle; and a sensor for detecting the position of the moving body. information; and a control unit that executes the following steps: outputting to the drive unit a control command for moving the moving body from a first position where the nozzle is arranged outside the periphery of the substrate to a second position where the nozzle is arranged on the periphery of the substrate ; and according to the relationship between the information detected by the sensor and the control command during the movement of the mobile body from the first position to the second position, the control command is corrected so as to reduce the deviation between the end position of the mobile body and the second position .

依據本基板處理裝置,於移動體的移動途中檢測有關移動體的位置的資訊,根據該資訊修正控制指令,藉此可縮小移動體的移動結束位置和第二位置的偏差。又,依據根據有關移動體的位置的資訊和控制指令的關係的方式,因不必如檢測基板的周緣的方式般在移動體本身配置感測器,故可避免例如因感測器的配置所導致之移動體的大型化等。又,藉由根據有關移動體的位置的資訊和控制指令的關係,可不需檢測基板的周緣等,而於任意時點有餘裕地修正控制指令。因此,本基板處理裝置可有效提升處理液對基板周緣部之供給位置的精確度。 According to this substrate processing apparatus, information about the position of the moving body is detected during the movement of the moving body, and control commands are corrected based on the information, thereby reducing the deviation between the movement end position of the moving body and the second position. In addition, according to the method based on the relationship between the information on the position of the moving body and the control command, it is not necessary to arrange sensors on the moving body itself as in the method of detecting the periphery of the substrate, so it is possible to avoid, for example, problems caused by the arrangement of the sensors. The enlargement of the mobile body, etc. In addition, based on the relationship between the information on the position of the moving body and the control command, it is possible to correct the control command with a margin at any point of time without detecting the periphery of the substrate or the like. Therefore, the substrate processing apparatus can effectively improve the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

控制部亦可更執行控制驅動部之步驟,俾於噴嘴到達基板的周緣上之前,使移動體從第一位置往第二位置的移動暫時停止,並根據移動體從第一位置往 第二位置的移動暫時停止時由感測器所檢測到的資訊,修正控制指令。此情形時,可於噴嘴到達基板的周緣部上之前的時點,有餘裕地修正控制指令。 The control unit may further execute the step of controlling the driving unit so that the movement of the moving body from the first position to the second position is temporarily stopped before the nozzle reaches the periphery of the substrate, and the movement of the moving body from the first position to the second position is temporarily stopped according to the movement of the moving body from the first position to the second position. The information detected by the sensor when the movement of the second position is temporarily stopped is used to modify the control command. In this case, the control command can be corrected with a margin before the nozzle reaches the peripheral portion of the substrate.

控制部亦可更執行下述步驟:控制液體供給部,俾於移動體從第一位置往第二位置的移動暫時停止時,從噴嘴噴吐處理液。此情形時,利用暫時停止的時點進行處理液的噴吐,可抑制噴吐開始時處理液所含的微粒附著於基板。 The control part may further execute the following step: controlling the liquid supply part to spray the processing liquid from the nozzle when the moving body temporarily stops moving from the first position to the second position. In this case, the discharge of the processing liquid is performed at the timing of the temporary stop, and it is possible to suppress the particles contained in the processing liquid from adhering to the substrate when the discharge starts.

控制部亦可於移動體從第一位置往第二位置的移動暫時停止的期間開始後,根據於用以使移動體的振動衰減的待機時間經過後由感測器所檢測到的資訊,修正控制指令。此情形時,可抑制起因於由感測器所檢測到的資訊的差異而導致處理液的供給位置的精確度降低。 The control unit may correct the movement of the moving body from the first position to the second position based on information detected by the sensor after a standby time for attenuating the vibration of the moving body has elapsed after the movement of the moving body from the first position to the second position is temporarily stopped. Control instruction. In this case, it is possible to suppress a reduction in the accuracy of the supply position of the treatment liquid due to a difference in information detected by the sensor.

控制部亦可於移動體從第一位置往第二位置的移動暫時停止的期間開始後,導出於較移動體的振動週期為長的既定期間中由感測器所檢測到的資訊的統計值,根據該統計值修正控制指令。此情形時,可抑制起因於位置資訊的差異而導致處理液的供給位置的精確度降低。 The control unit may also derive statistical values of information detected by the sensor during a predetermined period longer than the vibration period of the mobile body after the period in which the mobile body temporarily stops moving from the first position to the second position , and modify the control instruction according to the statistical value. In this case, it is possible to suppress a reduction in the accuracy of the supply position of the treatment liquid due to a difference in position information.

控制部亦可更執行下述步驟:根據因應修正後控制指令而得之移動體的移動結束位置和第二位置的偏差,調整控制指令的修正量。此情形時,可更縮小移動體的移動結束位置和第二位置的偏差。 The control unit may further perform the following step: adjusting the correction amount of the control command according to the deviation between the movement end position of the moving body and the second position obtained in response to the corrected control command. In this case, the deviation between the movement end position of the moving body and the second position can be further reduced.

本發明之基板處理方法,其包含下述步驟:控制驅動部,俾使包括用以對基板的周緣部噴吐處理液的噴嘴之移動體,從噴嘴配置在基板的周緣外之第一位置,移動至噴嘴配置在基板的周緣部上之第二位置;及根據移動體從第一位 置往第二位置的移動途中所檢測到的有關移動體的位置的資訊和對驅動部的控制指令的關係,修正對驅動部的控制指令,俾縮小移動體的移動結束位置與第二位置的偏差。 The substrate processing method of the present invention includes the step of: controlling the drive unit so that the moving body including the nozzle for spraying the processing liquid on the peripheral edge of the substrate moves from the first position where the nozzle is arranged outside the peripheral edge of the substrate. to the second position where the nozzle is arranged on the peripheral portion of the substrate; and from the first position according to the moving body Set the relationship between the information on the position of the mobile body detected during the movement to the second position and the control command to the drive unit, and correct the control command to the drive unit so that the distance between the end position of the mobile body and the second position can be reduced. deviation.

本發明之電腦可讀取之記錄媒體,其記錄有用以使一裝置執行上述基板處理方法的程式。 The computer-readable recording medium of the present invention records a program for enabling a device to execute the above substrate processing method.

依據本發明,可提供一種基板處理裝置,其能有效提升處理液對基板周緣部之供給位置的精確度。 According to the present invention, it is possible to provide a substrate processing apparatus capable of effectively improving the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

1:基板處理系統 1: Substrate processing system

2:塗佈/顯影裝置(基板處理裝置) 2: Coating/developing device (substrate processing device)

3:曝光裝置 3: Exposure device

4:載具區塊 4: Vehicle block

5:處理區塊 5: Processing blocks

6:介面區塊 6: Interface block

11:處理模組 11: Processing module

12:處理模組 12: Processing module

13:處理模組 13: Processing module

14:處理模組 14: Processing module

20:旋轉保持部 20: Rotation holding part

21:保持部 21: Keeping Department

22:旋轉驅動部 22: Rotary drive unit

30:塗佈液供給部 30: Coating liquid supply part

31:移動體 31: Moving body

32:塗佈液噴嘴 32: Coating liquid nozzle

33:塗佈液源 33: Coating liquid source

40:驅動部 40: Drive Department

41:動力源 41: power source

42:傳達機構 42: Communication agency

43:減速機 43: reducer

44:確動傳送帶 44: Confirm the conveyor belt

50:去除液供給部(液體供給部) 50: Removal liquid supply part (liquid supply part)

51:移動體 51: Moving body

52:去除液噴嘴(噴嘴) 52: Remover nozzle (nozzle)

53:去除液源 53: Remove the liquid source

60:驅動部 60: drive unit

61:動力源 61: power source

62:傳達機構 62: Communication agency

63:減速機 63: reducer

64:確動傳送帶 64: Confirm the conveyor belt

70:感測器 70: sensor

100:控制部 100: Control Department

111:塗佈液供給控制部 111: Coating solution supply control unit

112:塗佈液噴嘴移動控制部 112: Coating liquid nozzle movement control unit

113:去除液供給控制部 113: Removal liquid supply control part

114:去除液噴嘴移動控制部 114: Remover nozzle movement control part

116:控制指令保持部 116: Control instruction holding unit

117:控制指令修正部 117: Control Command Correction Department

118:修正量調整部 118: Correction amount adjustment department

119:旋轉控制部 119:Rotary control unit

120:電路 120: circuit

121:處理器 121: Processor

122:記憶體 122: memory

123:儲存器 123: Storage

124:輸出入埠 124: I/O port

125:計時器 125: timer

A1:傳遞臂 A1: Transfer arm

A3:搬運臂 A3: Carrying arm

A7:升降臂 A7:Lift arm

A8:傳遞臂 A8: Transfer arm

C:載具 C: vehicle

CL1:旋轉中心 CL1: Center of rotation

F1:覆膜 F1: lamination

L1:塗佈液 L1: Coating solution

L2:去除液 L2: Remover

LL:下限值 LL: lower limit value

P1:第一位置 P1: first position

P2:第二位置 P2: second position

S01~S09、S11~S15、S21~S27、S31~S36、S41~S48、S51~S57、S61~S67、S71~S77:步驟 S01~S09, S11~S15, S21~S27, S31~S36, S41~S48, S51~S57, S61~S67, S71~S77: steps

U1:塗佈單元 U1: coating unit

U2:熱處理單元 U2: heat treatment unit

U3:顯影單元 U3: Developing unit

U4:熱處理單元 U4: heat treatment unit

U10:棚架單元 U10: Pergola unit

U11:棚架單元 U11: Trellis unit

UL:上限值 UL: upper limit value

W:晶圓(基板) W: wafer (substrate)

Wa:表面 Wa: surface

Wc:周緣 Wc: Perimeter

【圖1】基板液體處理系統的概略結構的立體圖。 [FIG. 1] A perspective view of a schematic configuration of a substrate liquid processing system.

【圖2】基板處理裝置的概略結構的剖面圖。 [ Fig. 2 ] A cross-sectional view showing a schematic configuration of a substrate processing apparatus.

【圖3】塗佈單元的概略結構的示意圖。 [ Fig. 3 ] A schematic diagram of a schematic configuration of a coating unit.

【圖4】控制部的硬體結構的區塊圖。 [FIG. 4] A block diagram of the hardware configuration of the control unit.

【圖5】成膜處理程序的流程圖。 [ Fig. 5 ] A flow chart of the film formation process program.

【圖6】塗佈處理程序的流程圖。 [ Fig. 6 ] A flowchart of a coating processing program.

【圖7】(a)~(c)塗佈處理的執行中的晶圓狀態的示意圖。 [ FIG. 7 ] (a) to (c) Schematic diagrams of the state of the wafer during the execution of the coating process.

【圖8】周緣去除處理程序的流程圖。 [ Fig. 8 ] A flow chart of a peripheral edge removal processing program.

【圖9】周緣去除處理程序的流程圖。 [ Fig. 9 ] A flow chart of a peripheral edge removal processing program.

【圖10】(a)~(c)周緣去除處理的執行中的晶圓狀態的示意圖。 [ FIG. 10 ] (a) to (c) Schematic diagrams of the state of the wafer during the execution of the peripheral edge removal process.

【圖11】(a)、(b)周緣去除處理的執行中的晶圓狀態的示意圖。 [FIG. 11] (a), (b) Schematic diagrams of the state of the wafer during execution of the peripheral edge removal process.

【圖12】動作次數和從目標位置算起之偏離量的關係的例示圖。 [FIG. 12] An illustration of the relationship between the number of operations and the amount of deviation from the target position.

【圖13】周緣去除處理程序的變形例的流程圖。 [ Fig. 13 ] A flowchart of a modified example of the peripheral edge removal processing program.

【圖14】周緣去除處理程序的變形例的流程圖。 [ Fig. 14 ] A flowchart of a modified example of the peripheral edge removal processing program.

【圖15】周緣去除處理程序的其他變形例的流程圖。 [ Fig. 15 ] A flowchart of another modified example of the peripheral edge removal processing program.

【圖16】周緣去除處理程序的其他變形例的流程圖。 [ Fig. 16 ] A flowchart of another modified example of the peripheral edge removal processing program.

[基板處理系統] [Substrate Processing System]

基板處理系統1係對基板實施感光性覆膜之形成、該感光性覆膜之曝光、及該感光性覆膜之顯影的系統。處理對象的基板例如為半導體的晶圓W。感光性覆膜例如為光阻膜。基板處理系統1具備塗佈/顯影裝置2及曝光裝置3。曝光裝置3進行形成於晶圓W(基板)上的光阻膜(感光性覆膜)的曝光處理。具體而言,藉由液浸曝光等方法,對光阻膜的曝光對象部分照射能量線。塗佈/顯影裝置2於曝光裝置3所執行之曝光處理之前,進行於晶圓W(基板)表面形成光阻膜的處理,並於曝光處理之後,進行光阻膜的顯影處理。 The substrate processing system 1 is a system for forming a photosensitive coating, exposing the photosensitive coating, and developing the photosensitive coating on a substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a photoresist film. The substrate processing system 1 includes a coating/developing device 2 and an exposure device 3 . The exposure device 3 performs exposure processing of the photoresist film (photosensitive film) formed on the wafer W (substrate). Specifically, energy rays are irradiated to the exposure target portion of the photoresist film by a method such as liquid immersion exposure. The coating/developing device 2 performs the process of forming a photoresist film on the surface of the wafer W (substrate) before the exposure process performed by the exposure device 3 , and performs the process of developing the photoresist film after the exposure process.

[基板處理裝置] [Substrate Processing Equipment]

以下,作為基板處理裝置的一例,說明塗佈/顯影裝置2的結構。如圖1及圖2所示,塗佈/顯影裝置2具備:載具區塊4、處理區塊5、介面區塊6及控制部100。 Hereinafter, the configuration of the coating/developing device 2 will be described as an example of a substrate processing device. As shown in FIGS. 1 and 2 , the coating/developing device 2 includes a carrier block 4 , a processing block 5 , an interface block 6 and a control unit 100 .

載具區塊4,將晶圓W搬入至塗佈/顯影裝置2內,並從塗佈/顯影裝置2內將晶圓W搬出。例如,載具區塊4可支撐複數之晶圓W用之載具C,且內建傳遞臂 A1。載具C收容例如複數片圓形晶圓W。傳遞臂A1從載具C取出晶圓W而遞送至處理區塊5,並從處理區塊5收取晶圓W而返回至載具C內。 The carrier block 4 carries the wafer W into the coating/developing device 2 and unloads the wafer W from the coating/developing device 2 . For example, the carrier block 4 can support a carrier C for a plurality of wafers W, and a built-in transfer arm A1. The carrier C houses a plurality of circular wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier C and delivers it to the processing block 5 , and picks up the wafer W from the processing block 5 and returns it to the carrier C.

處理區塊5具有複數之處理模組11、12、13、14。處理模組11、12、13內建有:塗佈單元U1、熱處理單元U2、及將晶圓W搬運至此等單元之搬運臂A3。 The processing block 5 has a plurality of processing modules 11 , 12 , 13 , 14 . The processing modules 11 , 12 , 13 are built with: a coating unit U1 , a heat treatment unit U2 , and a transfer arm A3 for transferring the wafer W to these units.

處理模組11藉由塗佈單元U1及熱處理單元U2於晶圓W的表面上形成下層膜。處理模組11的塗佈單元U1,將下層膜形成用之處理液塗佈於晶圓W上。處理模組11的熱處理單元U2,進行伴隨下層膜之形成的各種熱處理。 The processing module 11 forms a lower layer film on the surface of the wafer W through the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 11 coats the processing liquid for forming the lower layer film on the wafer W. The heat treatment unit U2 of the processing module 11 performs various heat treatments accompanying the formation of the lower layer film.

處理模組12藉由塗佈單元U1及熱處理單元U2於下層膜上形成光阻膜。處理模組12的塗佈單元U1,將光阻膜形成用之處理液塗佈於下層膜之上。處理模組12的熱處理單元U2,進行伴隨光阻膜之形成的各種熱處理。 The processing module 12 forms a photoresist film on the lower layer film through the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 coats the processing solution for forming the photoresist film on the lower layer film. The heat treatment unit U2 of the processing module 12 performs various heat treatments accompanying the formation of the photoresist film.

處理模組13藉由塗佈單元U1及熱處理單元U2於光阻膜上形成上層膜。處理模組13的塗佈單元U1,將上層膜形成用之液體塗佈於光阻膜之上。處理模組13的熱處理單元U2,進行伴隨上層膜之形成的各種熱處理。 The processing module 13 forms an upper film on the photoresist film through the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 coats the liquid for forming the upper layer film on the photoresist film. The heat treatment unit U2 of the processing module 13 performs various heat treatments accompanying the formation of the upper layer film.

處理模組14內建有:顯影單元U3、熱處理單元U4、及將晶圓W搬運至此等單元之搬運臂A3。 The processing module 14 is built with: a developing unit U3, a heat treatment unit U4, and a transfer arm A3 for transferring the wafer W to these units.

處理模組14藉由顯影單元U3及熱處理單元U4進行曝光後之光阻膜的顯影處理。顯影單元U3於曝光完畢的晶圓W的表面上塗佈顯影液之後,以沖洗液將該顯影液洗去,藉以進行光阻膜的顯影處理。熱處理單元U4,進行伴隨顯影處 理的各種熱處理。熱處理的具體例,列舉如為顯影處理前之加熱處理(PEB:Post Exposure Bake;曝光後烘烤)、顯影處理後之加熱處理(PB:Post Bake;後烘烤)等。 The processing module 14 uses the developing unit U3 and the thermal processing unit U4 to develop the exposed photoresist film. After the developing unit U3 coats the developing solution on the surface of the exposed wafer W, the developing solution is washed away with a rinse solution, so as to develop the photoresist film. Heat treatment unit U4, for accompanying development Various heat treatments. Specific examples of heat treatment include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

於處理區塊5內之載具區塊4側,設置棚架單元U10。棚架單元U10區隔成於上下方向排列的複數之格室。於棚架單元U10附近,設置升降臂A7。升降臂A7於棚架單元U10的格室彼此間,使晶圓W升降。 On the side of the carrier block 4 in the processing block 5, a shelving unit U10 is arranged. The shelf unit U10 is partitioned into a plurality of compartments arranged in the vertical direction. Near the shelving unit U10, a lifting arm A7 is provided. The lifting arm A7 lifts and lowers the wafer W between cells of the shelf unit U10 .

於處理區塊5內之介面區塊6側,設置棚架單元U11。棚架單元U11區隔成於上下方向排列的複數之格室。 On the side of the interface block 6 in the processing block 5, a shelving unit U11 is provided. The shelf unit U11 is divided into a plurality of compartments arranged in the vertical direction.

介面區塊6,於與曝光裝置3之間進行晶圓W的傳遞。例如,介面區塊6內建傳遞臂A8,並連接於曝光裝置3。傳遞臂A8將配置於棚架單元U11的晶圓W傳遞至曝光裝置3,並從曝光裝置3收取晶圓W而返回至棚架單元U11。 The interface block 6 transfers the wafer W to and from the exposure device 3 . For example, the interface block 6 has a built-in transfer arm A8 and is connected to the exposure device 3 . The transfer arm A8 transfers the wafer W disposed on the rack unit U11 to the exposure device 3 , picks up the wafer W from the exposure device 3 , and returns it to the rack unit U11 .

控制部100控制塗佈/顯影裝置2,使以例如下述程序執行塗佈/顯影處理。首先,控制部100控制傳遞臂A1,俾將載具C內的晶圓W搬運至棚架單元U10,並控制升降臂A7,俾將此晶圓W配置於處理模組11用的格室。 The control unit 100 controls the coating/developing device 2 so that, for example, the coating/developing process is executed in the following procedure. First, the control unit 100 controls the transfer arm A1 to transport the wafer W in the carrier C to the shelf unit U10 , and controls the lift arm A7 to place the wafer W in the chamber for the processing module 11 .

其次,控制部100控制搬運臂A3,俾將棚架單元U10的晶圓W搬運至處理模組11內的塗佈單元U1及熱處理單元U2,並控制塗佈單元U1及熱處理單元U2,俾於此晶圓W的表面上形成下層膜。其後,控制部100控制搬運臂A3,俾使已形成下層膜的晶圓W返回至棚架單元U10,並控制升降臂A7,俾將此晶圓W配置於處理模組12用的格室。 Next, the control unit 100 controls the transport arm A3 so as to transport the wafer W on the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11, and controls the coating unit U1 and the heat treatment unit U2 so that An underlayer film is formed on the surface of the wafer W. Thereafter, the control unit 100 controls the transfer arm A3 so that the wafer W on which the lower layer film has been formed returns to the shelf unit U10, and controls the lifting arm A7 so that the wafer W is placed in the chamber for the processing module 12. .

其次,控制部100控制搬運臂A3,俾將棚架單元U10的晶圓W搬運至處理模組12內的塗佈單元U1及熱處理單元U2,並控制塗佈單元U1及熱處理單元U2,俾於此晶圓W的下層膜上形成光阻膜。其後,控制部100控制搬運臂A3,俾使晶圓W返回至棚架單元U10,並控制升降臂A7,俾將此晶圓W配置於處理模組13用的格室。 Next, the control unit 100 controls the transport arm A3 so as to transport the wafer W on the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12, and controls the coating unit U1 and the heat treatment unit U2 so that A photoresist film is formed on the lower layer film of the wafer W. Thereafter, the control unit 100 controls the transfer arm A3 to return the wafer W to the rack unit U10 , and controls the lifting arm A7 to place the wafer W in the chamber for the processing module 13 .

其次,控制部100控制搬運臂A3,俾將棚架單元U10的晶圓W搬運至處理模組13內的各單元,並控制塗佈單元U1及熱處理單元U2,俾於此晶圓W的光阻膜上形成上層膜。其後,控制部100控制搬運臂A3,俾將晶圓W搬運至棚架單元U11。 Next, the control unit 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 13, and controls the coating unit U1 and the heat treatment unit U2 so as to ensure the light of the wafer W. An upper film is formed on the resist film. Thereafter, the control unit 100 controls the transfer arm A3 so as to transfer the wafer W to the shelf unit U11 .

其次,控制部100控制傳遞臂A8,俾將棚架單元U11的晶圓W送出至曝光裝置3。其後,控制部100控制傳遞臂A8,俾從曝光裝置3收取已實施曝光處理的晶圓W,並配置於棚架單元U11中的處理模組14用的格室。 Next, the control unit 100 controls the transfer arm A8 so as to send the wafer W of the rack unit U11 to the exposure device 3 . Thereafter, the control unit 100 controls the transfer arm A8 so as to receive the exposed wafer W from the exposure device 3 and arrange it in the cell for the processing module 14 in the shelf unit U11 .

其次,控制部100控制搬運臂A3,俾將棚架單元U11的晶圓W搬運至處理模組14內的各單元,並控制顯影單元U3及熱處理單元U4,俾對此晶圓W的光阻膜實施顯影處理。其後,控制部100控制搬運臂A3,俾使晶圓W返回至棚架單元U10,並控制升降臂A7及傳遞臂A1,俾使此晶圓W返回至載具C內。以上至此,塗佈/顯影處理結束。 Next, the control unit 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 so that the photoresist of the wafer W is The film is subjected to a development treatment. Thereafter, the control unit 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10 , and controls the lifting arm A7 and the transfer arm A1 to return the wafer W to the carrier C. From the above, the coating/development process is completed.

又,基板處理裝置的具體結構,不限於以上例示的塗佈/顯影裝置2的結構。基板處理裝置只要具備塗佈單元U1及能控制該塗佈單元U1的控制部100,則任意裝置皆可。 In addition, the specific structure of the substrate processing apparatus is not limited to the structure of the coating/developing apparatus 2 exemplified above. Any substrate processing apparatus may be used as long as it includes the coating unit U1 and the control unit 100 capable of controlling the coating unit U1.

[塗佈單元] [Coating unit]

接著,具體說明上述塗佈單元U1的結構。如圖3所示,塗佈單元U1具有:旋轉保持部20、塗佈液供給部30、驅動部40、去除液供給部50、驅動部60及感測器70。 Next, the structure of the said coating unit U1 is demonstrated concretely. As shown in FIG. 3 , the coating unit U1 has a rotation holding unit 20 , a coating liquid supply unit 30 , a drive unit 40 , a removal liquid supply unit 50 , a drive unit 60 , and a sensor 70 .

旋轉保持部20保持晶圓W並使其旋轉。例如,旋轉保持部20具有保持部21及旋轉驅動部22。保持部21支撐表面Wa朝上且水平配置的晶圓W的中心部,利用例如真空吸附等而保持該晶圓W。旋轉驅動部22係以例如電動馬達等作為動力源的致動器,使保持部21繞著鉛直的旋轉中心CL1旋轉。藉此,晶圓W亦旋轉。 The rotation holding unit 20 holds and rotates the wafer W. For example, the rotation holding part 20 has a holding part 21 and a rotation driving part 22 . The holding unit 21 supports the central portion of the horizontally arranged wafer W with the surface Wa facing upward, and holds the wafer W by, for example, vacuum suction or the like. The rotation driving part 22 is an actuator using an electric motor as a power source, for example, and rotates the holding part 21 around a vertical rotation center CL1. Thereby, the wafer W is also rotated.

塗佈液供給部30對晶圓W的表面Wa供給塗佈液(例如下層膜、光阻膜或上層膜形成用之處理液)。塗佈液供給部30具有:移動體31,包括用以對晶圓W噴吐塗佈液之塗佈液噴嘴32;及塗佈液源33。塗佈液噴嘴32於晶圓W的表面Wa側(下方)開口,並向下方噴吐塗佈液。塗佈液源33將塗佈液供給至塗佈液噴嘴32。 The coating liquid supply unit 30 supplies a coating liquid (for example, a processing liquid for forming a lower layer film, a photoresist film, or an upper layer film) to the surface Wa of the wafer W. The coating liquid supply unit 30 has: a moving body 31 including a coating liquid nozzle 32 for discharging the coating liquid onto the wafer W; and a coating liquid source 33 . The coating liquid nozzle 32 opens on the surface Wa side (downward) of the wafer W, and discharges the coating liquid downward. The coating liquid source 33 supplies the coating liquid to the coating liquid nozzle 32 .

驅動部40使包括塗佈液噴嘴32之移動體31移動。例如,驅動部40具有:如電動馬達等之動力源41;及將動力源41的動力傳達至移動體31之傳達機構42。傳達機構42具有例如減速機43及確動傳送帶44等,將動力源41的旋轉扭矩轉換成平移的力而傳達至移動體31。 The driving unit 40 moves the movable body 31 including the coating liquid nozzle 32 . For example, the driving unit 40 has: a power source 41 such as an electric motor; and a transmission mechanism 42 that transmits the power of the power source 41 to the moving body 31 . The transmission mechanism 42 has, for example, a speed reducer 43 and a confirmation belt 44 , and converts the rotational torque of the power source 41 into translational force and transmits it to the moving body 31 .

去除液供給部50將用以去除塗佈液成分的覆膜之處理液(以下,稱此為「去除液」)供給至晶圓W的表面Wa之周緣部(周緣Wc的附近部分)。去除液供給部50具有:移動體51,包括用以對晶圓W的周緣部噴吐去除液之去除液噴嘴52;及 去除液源53。去除液噴嘴52於晶圓W的表面Wa側(下方)開口,並向下方噴吐去除液。去除液源53將去除液供給至去除液噴嘴52。去除液例如係使塗佈液成分的覆膜溶解之有機溶劑。 The removal liquid supply unit 50 supplies a processing liquid (hereinafter, referred to as “removal liquid”) for removing the film of the coating liquid component to the peripheral portion of the surface Wa of the wafer W (the portion near the peripheral edge Wc). The removal liquid supply unit 50 has: a moving body 51 including a removal liquid nozzle 52 for spraying the removal liquid to the peripheral portion of the wafer W; and Liquid source 53 is removed. The removal liquid nozzle 52 opens on the surface Wa side (lower side) of the wafer W, and discharges the removal liquid downward. The removal liquid source 53 supplies the removal liquid to the removal liquid nozzle 52 . The removal liquid is, for example, an organic solvent that dissolves the film of the coating liquid component.

驅動部60使包括去除液噴嘴52之移動體51移動。例如,驅動部60具有:如電動馬達等之動力源61;及將動力源61的動力傳達至移動體51的傳達機構62。動力源61可為能以開路方式(未伴隨控制量的反饋之控制方式)控制的馬達,亦可為能以閉路方式(伴隨控制量的反饋之控制方式)控制的馬達。能以開路方式控制的馬達的具體例,例如為步進馬達等。能以閉路方式控制的馬達的具體例,例如為伺服馬達等。 The driving unit 60 moves the moving body 51 including the removal liquid nozzle 52 . For example, the driving unit 60 has: a power source 61 such as an electric motor; and a transmission mechanism 62 that transmits the power of the power source 61 to the moving body 51 . The power source 61 may be an open-circuit controllable motor (a control method without feedback of a control variable) or a closed-circuit controllable motor (a control method with a control variable feedback). A specific example of an open-circuit controllable motor is, for example, a stepping motor or the like. A specific example of a closed-loop controllable motor is, for example, a servo motor or the like.

傳達機構62具有例如減速機63及確動傳送帶64等,將動力源61的旋轉扭矩轉換成平移的力而傳達至移動體51。具有如此之傳達機構62的情形時,於移動體51的位置,可能會產生起因於傳達機構62的特性(例如減速機63的背隙(backlash)及確動傳送帶64的伸長)的誤差。又,該誤差起因於傳達機構62的特性變化(例如確動傳送帶64的伸長量的變化)而可能經時變化。 The transmission mechanism 62 has, for example, a speed reducer 63 and a confirmation belt 64 , and converts the rotational torque of the power source 61 into translational force and transmits it to the moving body 51 . When such a transmission mechanism 62 is provided, errors may occur in the position of the moving body 51 due to the characteristics of the transmission mechanism 62 (for example, the backlash of the speed reducer 63 and the elongation of the actuating conveyor belt 64 ). In addition, this error may change over time due to a characteristic change of the transmission mechanism 62 (for example, a change in the elongation amount of the actuator belt 64 ).

感測器70檢測有關移動體51位置的資訊。有關移動體51位置的資訊,可為直接表示移動體51位置的資訊,亦可為間接表示移動體51位置的資訊。感測器70的具體例,如為藉由光學式或磁氣式等線性刻度尺來檢測移動體51的位置之位置感測器、雷射位移計等之非接觸式距離感測器等。又,感測器70亦可為例如光遮斷器等之檢測移動體51往其設置位置的到達之感測器。此情形時,可檢測移動體51往該設置位置的到達時刻,作為有關位置的資訊。亦可藉由到達時 刻,根據相對於目標時刻(不考慮上述誤差的設計上的時刻)的延遲或提前而可得到有關位置的資訊。 The sensor 70 detects information about the position of the mobile body 51 . The information on the position of the moving body 51 may be information directly indicating the position of the moving body 51 or information indirectly indicating the position of the moving body 51 . Specific examples of the sensor 70 include a position sensor that detects the position of the moving body 51 with an optical or magnetic linear scale, a non-contact distance sensor such as a laser displacement meter, and the like. Moreover, the sensor 70 may be the sensor which detects the arrival of the moving body 51 to the installation position, such as a photointerrupter, for example. In this case, the arrival time of the mobile body 51 to the set position can be detected as information about the position. Arrival can also be done by Information about the position can be obtained according to the delay or advance relative to the target time (design time without considering the above-mentioned error).

如上所述所構成的塗佈單元U1,係由控制部100所控制。控制部100執行下述步驟:將用以使移動體51從去除液噴嘴52配置在晶圓W的周緣Wc外之第一位置P1移動至去除液噴嘴52配置在晶圓W的周緣部上之第二位置P2的控制指令,輸出至驅動部60;及根據於移動體51從第一位置P1往第二位置P2的移動途中由感測器70所檢測到的資訊和控制指令的關係,修正控制指令,俾縮小移動體51的移動結束位置和第二位置P2的偏差。 The coating unit U1 configured as described above is controlled by the control unit 100 . The control unit 100 executes the following steps: moving the moving body 51 from the first position P1 where the removal liquid nozzle 52 is disposed outside the peripheral edge Wc of the wafer W to a position where the removal liquid nozzle 52 is disposed on the peripheral portion of the wafer W. The control command of the second position P2 is output to the driving part 60; and according to the relationship between the information detected by the sensor 70 and the control command during the movement of the moving body 51 from the first position P1 to the second position P2, the correction is made. The control command is used to reduce the deviation between the movement end position of the mobile body 51 and the second position P2.

控制部100亦可更執行控制驅動部60之步驟,俾於來自去除液噴嘴52之去除液的供給位置到達晶圓W的周緣Wc之前,使移動體51從第一位置P1往第二位置P2的移動暫時停止,並根據於移動體51從第一位置P1往第二位置P2的移動暫時停止時由感測器70所檢測到的資訊,修正控制指令。控制部100亦可更執行下述步驟:控制去除液供給部50,俾於移動體51從第一位置P1往第二位置P2的移動暫時停止時,從去除液噴嘴52噴吐去除液。控制部100亦可構成為:於移動體51從第一位置P1往第二位置P2的移動暫時停止的期間開始後,根據於用以使移動體51的振動衰減的待機時間經過後由感測器70所檢測到的資訊,修正控制指令。控制部100亦可於移動體51從第一位置P1往第二位置P2的移動暫時停止的期間開始後,導出於較移動體51的振動週期為長的既定期間中由感測器70所檢測到的資訊的統計值,根據該統計值修正控制指令。 The control unit 100 may further execute the step of controlling the driving unit 60 so that the moving body 51 moves from the first position P1 to the second position P2 before the supply position of the removal liquid from the removal liquid nozzle 52 reaches the peripheral edge Wc of the wafer W. The movement of the mobile body 51 is temporarily stopped, and the control command is modified according to the information detected by the sensor 70 when the movement of the mobile body 51 from the first position P1 to the second position P2 is temporarily stopped. The control unit 100 may further perform the following step: controlling the removal liquid supply unit 50 so that the removal liquid is sprayed from the removal liquid nozzle 52 when the movement of the moving body 51 from the first position P1 to the second position P2 is temporarily stopped. The control unit 100 may also be configured to sense the time after the elapse of the standby time for attenuating the vibration of the mobile body 51 after the period in which the movement of the mobile body 51 from the first position P1 to the second position P2 is temporarily stopped. The information detected by the device 70 is used to modify the control instruction. The control unit 100 may also derive a signal detected by the sensor 70 during a predetermined period longer than the vibration period of the mobile body 51 after the period in which the mobile body 51 temporarily stops moving from the first position P1 to the second position P2 begins. The statistical value of the received information is used to modify the control instruction according to the statistical value.

例如,作為功能上的結構(以下,稱「功能模組」),控制部100具有:旋轉控制部119;塗佈液噴嘴移動控制部112;塗佈液供給控制部111;去除液噴嘴移 動控制部114;去除液供給控制部113;控制指令保持部116;控制指令修正部117;及修正量調整部118。 For example, as a functional structure (hereinafter referred to as "functional module"), the control unit 100 has: a rotation control unit 119; a coating liquid nozzle movement control unit 112; a coating liquid supply control unit 111; The removal liquid supply control unit 113; the control command storage unit 116; the control command correction unit 117; and the correction amount adjustment unit 118.

旋轉控制部119控制旋轉保持部20,俾保持晶圓W並使其旋轉。塗佈液噴嘴移動控制部112控制驅動部40,俾使移動體31於在由旋轉保持部20所保持的晶圓W的周緣Wc外配置塗佈液噴嘴32之待機位置和在該晶圓W的表面Wa的中心上配置塗佈液噴嘴32之塗佈目標位置之間移動。 The rotation control unit 119 controls the rotation holding unit 20 so as to hold and rotate the wafer W. The coating liquid nozzle movement control unit 112 controls the driving unit 40 so that the moving body 31 is at the standby position where the coating liquid nozzle 32 is disposed outside the peripheral edge Wc of the wafer W held by the rotation holding unit 20 and on the wafer W. The coating liquid nozzle 32 moves between the coating target positions arranged on the center of the surface Wa.

塗佈液供給控制部111控制塗佈液供給部30,俾將塗佈液供給至由旋轉控制部119所保持的晶圓W的表面Wa。例如,塗佈液供給控制部111控制塗佈液供給部30,俾於移動體31位於塗佈目標位置的狀態下,將塗佈液從塗佈液源33供給至塗佈液噴嘴32。 The coating liquid supply control unit 111 controls the coating liquid supply unit 30 so as to supply the coating liquid to the surface Wa of the wafer W held by the rotation control unit 119 . For example, the coating liquid supply control unit 111 controls the coating liquid supply unit 30 so as to supply the coating liquid from the coating liquid source 33 to the coating liquid nozzle 32 with the moving body 31 located at the coating target position.

去除液噴嘴移動控制部114控制驅動部60,俾使移動體51於去除液噴嘴52配置在由旋轉保持部20所保持的晶圓W的周緣Wc外之待機位置(第一位置)和去除液噴嘴52配置在該晶圓W的周緣部上之去除目標位置(第二位置)之間移動。例如,去除液噴嘴移動控制部114將用以使移動體51從上述待機位置移動至上述去除目標位置的控制指令(以下,稱「去程控制指令」)和使移動體51從上述去除目標位置移動至上述待機位置的控制指令(以下,稱「回程控制指令」),輸出至驅動部60。去除液噴嘴移動控制部114可構成為以上述開路方式控制驅動部60,亦可構成為以上述閉路方式控制驅動部60。 The removing liquid nozzle movement control unit 114 controls the driving unit 60 so that the moving body 51 is disposed at the standby position (first position) and the removing liquid nozzle 52 at the standby position (first position) outside the periphery Wc of the wafer W held by the rotating holding unit 20 . The nozzle 52 is arranged to move between removal target positions (second positions) on the peripheral portion of the wafer W. As shown in FIG. For example, the removal liquid nozzle movement control unit 114 combines a control command (hereinafter referred to as "outgoing control command") for moving the moving body 51 from the standby position to the removal target position and a control command for moving the moving body 51 from the removal target position to the removal target position. A control command for moving to the standby position (hereinafter referred to as “return control command”) is output to the drive unit 60 . The removal liquid nozzle movement control unit 114 may be configured to control the drive unit 60 in the above-mentioned open-circuit manner, or may be configured to control the drive unit 60 in the above-mentioned closed-circuit manner.

去除液噴嘴移動控制部114亦可構成為:更執行下述步驟:控制驅動部60,俾於去除液噴嘴52到達晶圓W的周緣Wc上之前,使移動體51從待機位置往去除 目標位置的移動暫時停止。所謂「去除液噴嘴52到達晶圓W的周緣Wc上」,意指去除液噴嘴52開口的中心線和沿著表面Wa之平面的交叉點到達周緣Wc。所謂「暫時停止」,意指依照控制指令的移動停止。亦即,依照控制指令的移動停止後,因慣性所致的振動仍持續的狀態,亦包含於暫時停止的狀態。 The removal liquid nozzle movement control unit 114 may also be configured to: further execute the following step: control the driving unit 60 so that the moving body 51 is removed from the standby position before the removal liquid nozzle 52 reaches the periphery Wc of the wafer W. The movement of the target position is temporarily stopped. The phrase “the removing liquid nozzle 52 reaches the peripheral edge Wc of the wafer W” means that the intersection point of the center line of the removing liquid nozzle 52 opening and the plane along the surface Wa reaches the peripheral edge Wc. The so-called "temporary stop" means that the movement according to the control command is stopped. That is, a state where vibration due to inertia continues even after the movement according to the control command stops is also included in the temporarily stopped state.

去除液供給控制部113控制去除液供給部50,俾從去除液噴嘴52對晶圓W的周緣部噴吐去除液。例如去除液供給控制部113控制去除液供給部50,俾至少於去除液噴嘴52位於晶圓W的周緣部上的狀態下,從去除液源53將去除液供給至去除液噴嘴52。去除液供給控制部113亦可控制去除液供給部50,俾於移動體51從待機位置往去除目標位置的移動暫時停止時,亦從去除液噴嘴52噴吐去除液。例如去除液供給控制部113亦可控制去除液供給部50,俾於移動體51從待機位置往去除目標位置的移動暫時停止時,開始進行去除液從去除液源53往去除液噴嘴52的供給,之後持續進行去除液從去除液源53往去除液噴嘴52的供給,直至去除液往晶圓W的周緣部的噴吐結束為止。 The removal liquid supply control unit 113 controls the removal liquid supply unit 50 so that the removal liquid is sprayed from the removal liquid nozzle 52 to the peripheral portion of the wafer W. For example, the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so that the removal liquid is supplied from the removal liquid source 53 to the removal liquid nozzle 52 in a state where the removal liquid nozzle 52 is located on the peripheral portion of the wafer W. The removal liquid supply control unit 113 may control the removal liquid supply unit 50 so as to spray the removal liquid from the removal liquid nozzle 52 even when the moving body 51 temporarily stops moving from the standby position to the removal target position. For example, the removal liquid supply control part 113 may also control the removal liquid supply part 50 so that when the movement of the moving body 51 from the standby position to the removal target position is temporarily stopped, the removal liquid is started to be supplied from the removal liquid source 53 to the removal liquid nozzle 52. , and then continue to supply the removal liquid from the removal liquid source 53 to the removal liquid nozzle 52 until the discharge of the removal liquid to the peripheral portion of the wafer W is completed.

控制指令保持部116記錄上述去程控制指令和上述回程控制指令。控制指令修正部117根據於移動體51從待機位置往去除目標位置的移動途中由感測器70所檢測到的資訊和去程控制指令的關係,修正去程控制指令,俾縮小移動體51的移動結束位置和去除目標位置的偏差。例如控制指令修正部117根據由感測器70所檢測到的資訊和去程控制指令的關係,計算移動體51的位置相對於去程控制指令的偏差,而修正去程控制指令,俾縮小該偏差。更具體而言,於基於由感測器70所檢測到的資訊而得之移動體51的位置未到達該資訊檢測時點的目標位置(不考慮誤差時的設計上的到達預定位置)的情形時,控制指令修正部117修正去程控制指令,俾使該檢測時點以後之移動體51的移動距離加長。另一方面, 於根據由感測器70所檢測到的資訊而得之移動體51的位置超過該資訊的檢測時點的目標位置的情形時,控制指令修正部117修正去程控制指令,俾使該檢測時點以後之移動體51的移動距離縮短。 The control command holding unit 116 records the above-mentioned outbound control command and the above-mentioned return control command. The control instruction modification unit 117 modifies the outbound control instruction according to the relationship between the information detected by the sensor 70 and the outbound control instruction during the movement of the moving body 51 from the standby position to the removal target position, so as to reduce the size of the moving object 51. Move the end position and remove the deviation from the target position. For example, the control command modification unit 117 calculates the deviation of the position of the mobile body 51 relative to the forward control command based on the relationship between the information detected by the sensor 70 and the forward control command, and corrects the forward control command so as to reduce the deviation. More specifically, when the position of the moving body 51 obtained based on the information detected by the sensor 70 does not reach the target position at the point of time when the information is detected (designally reached predetermined position when the error is not considered) Then, the control command correction unit 117 corrects the outbound control command so that the moving distance of the mobile body 51 after the detected time point is increased. on the other hand, When the position of the mobile body 51 obtained based on the information detected by the sensor 70 exceeds the target position at the detection time point of the information, the control command modification unit 117 modifies the outbound control command so that after the detection time point Therefore, the moving distance of the moving body 51 is shortened.

又,當感測器70係用以檢測移動體51往其設置位置的到達之感測器時,控制指令修正部117以如下方式修正控制指令。亦即,於移動體51往感測器70的設置位置的到達時刻晚於目標時刻的情形時,控制指令修正部117修正去程控制指令,俾上使述檢測時點以後的移動體51的移動距離加長。另一方面,於移動體51往感測器70的設置位置的移動體51的到達時刻早於目標時刻的情形時,控制指令修正部117修正去程控制指令,俾使上述檢測時點以後的移動體51的移動距離縮短。 Also, when the sensor 70 is a sensor for detecting the arrival of the moving body 51 to its installation position, the control command correction unit 117 corrects the control command as follows. That is, when the arrival time of the mobile body 51 to the installation position of the sensor 70 is later than the target time, the control command modification unit 117 modifies the outbound control command so as to make the movement of the mobile body 51 after the detection time point The distance increases. On the other hand, when the arrival time of the mobile body 51 to the installation position of the sensor 70 is earlier than the target time, the control command modification unit 117 modifies the outbound control command so that the movement after the above-mentioned detection time point The moving distance of the body 51 is shortened.

控制指令修正部117亦可構成為:於移動體51從待機位置往去除目標位置的移動暫時停止時,根據由感測器70所檢測到的資訊修正去程控制指令。控制指令修正部117亦可構成為:於移動體51從待機位置往去除目標位置的移動暫時停止的期間開始後,根據於用以使移動體51的振動衰減的待機時間經過後由感測器70所檢測到的資訊,修正控制指令。控制指令修正部117亦可構成為:於移動體51從待機位置往去除目標位置的移動暫時停止的期間開始後,導出於較移動體51的振動週期為長的既定期間中由感測器70所檢測到的資訊的統計值(例如平均值),根據該統計值修正控制指令。 The control command correction unit 117 may also be configured to correct the outbound control command according to the information detected by the sensor 70 when the moving body 51 temporarily stops moving from the standby position to the removal target position. The control command correction unit 117 may be configured to be configured by the sensor after the elapse of the standby time for attenuating the vibration of the mobile body 51 after the period in which the movement of the mobile body 51 from the standby position to the removal target position is temporarily stopped. 70 The detected information is used to modify the control instruction. The control command modification unit 117 may also be configured to derive a signal from the sensor 70 during a predetermined period longer than the vibration period of the mobile body 51 after the period in which the movement of the mobile body 51 from the standby position to the removal target position is temporarily stopped. A statistical value (for example, an average value) of the detected information, and the control instruction is modified according to the statistical value.

修正量調整部118根據因應控制指令修正部117所執行之修正後去程控制指令而得之移動體51的移動結束位置和去除目標位置的偏差,調整控制指令修正部117所執行之控制指令的修正量。所謂「控制指令修正部117所執行之控制指 令的修正量」,意指例如使上述檢測時點以後的移動體51的移動距離加長或縮短的量。 The correction amount adjusting unit 118 adjusts the control command executed by the control command correcting unit 117 based on the deviation between the movement end position of the moving body 51 obtained in response to the corrected outbound control command executed by the control command correcting unit 117 and the removal target position. correction amount. The so-called "control instruction executed by the control instruction modification unit 117 "Correction amount of command" means, for example, an amount to increase or decrease the moving distance of the moving body 51 after the detection time point described above.

更具體而言,修正量調整部118根據因應控制指令修正部117所執行之修正後去程控制指令而得之移動體51的移動結束位置和去除目標位置的偏差,於判斷為「修正量過小」的情形時增加修正量,於判斷為「修正量過大」的情形時減少修正量。作為判斷為「修正量過小」的情形的具體例,如為:於即使將上述檢測時點以後的移動距離加長移動體51的移動結束位置仍未到達去除目標位置的情形、及即使將上述檢測時點以後的移動距離縮短移動體51的移動結束位置仍超過去除目標位置的情形。而判斷為「修正量過大」的情形的具體例,如為:將上述檢測時點以後的移動距離加長,結果使得移動體51的移動結束位置超過去除目標位置的情形、及將上述檢測時點以後的移動距離縮短,結果使得移動體51的移動結束位置未到達去除目標位置的情形。 More specifically, the correction amount adjustment unit 118 judges that “the correction amount is too small” based on the deviation between the movement end position of the mobile body 51 obtained in response to the corrected outbound control command executed by the control command correction unit 117 and the removal target position. In the case of ", increase the correction amount, and decrease the correction amount when it is judged that "the correction amount is too large". As a specific example of the situation where it is judged that "the correction amount is too small", such as: the situation where the end position of the movement of the mobile body 51 has not reached the removal target position even if the moving distance after the above-mentioned detection time point is lengthened, and even if the above-mentioned detection time point A case where the movement end position of the moving body 51 still exceeds the target position is eliminated in the subsequent movement distance shortening. Specific examples of the situation where it is judged that the "correction amount is too large" are as follows: the movement distance after the above-mentioned detection time point is lengthened, and as a result, the movement end position of the mobile body 51 exceeds the removal target position; The movement distance is shortened, and as a result, the movement end position of the moving body 51 does not reach the removal target position.

控制部100由一或複數之控制用電腦所構成。例如,控制部100具有圖4所示的電路120。電路120具有:一或複數之處理器121、記憶體122、儲存器123、輸出入埠124及計時器125。儲存器123具有例如硬碟等電腦可讀取記錄媒體。記錄媒體記錄用以使塗佈單元U1執行後述基板處理程序的程式。記錄媒體亦可為非揮發性的半導體記憶體、磁碟及光碟等可取出媒體。記憶體122暫時記錄從儲存器123的記錄媒體載入的程式、及處理器121所產生的運算結果。處理器121藉由與記憶體122協同合作執行上述程式,而構成上述各功能模組。輸出入埠124依照來自處理器121的指令,於旋轉保持部20、塗佈液供給部30、驅動部40、去除液供給部50、驅動部60及感測器70之間,進行電信號之輸出入。計時器125例如藉由計算固定週期的基準脈衝而量測經過時間。又,控制部100的硬體構成,不 必非要限定於以程式而構成各功能模組者。例如控制部100的各功能模組,亦可由專用的邏輯電路或整合此邏輯電路的ASIC(Application Specific Integrated Circuit:特殊應用積體電路)所構成。 The control unit 100 is composed of one or a plurality of control computers. For example, the control unit 100 has a circuit 120 shown in FIG. 4 . The circuit 120 has: one or a plurality of processors 121 , a memory 122 , a storage 123 , an input/output port 124 and a timer 125 . The storage 123 has a computer-readable recording medium such as a hard disk, for example. The recording medium records a program for causing the coating unit U1 to execute a substrate processing procedure described later. The recording medium may also be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily records programs loaded from the recording medium of the storage 123 and calculation results generated by the processor 121 . The processor 121 cooperates with the memory 122 to execute the above-mentioned programs to form the above-mentioned functional modules. The input/output port 124 communicates electrical signals between the rotation holding unit 20 , the coating solution supply unit 30 , the drive unit 40 , the removal solution supply unit 50 , the drive unit 60 and the sensor 70 according to instructions from the processor 121 . input and output. The timer 125 measures the elapsed time, for example, by counting a reference pulse of a fixed period. Also, the hardware configuration of the control unit 100 is not It is not necessary to be limited to those that constitute each functional module with a program. For example, each functional module of the control unit 100 may also be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit: Application Specific Integrated Circuit) integrating the logic circuit.

[成膜處理程序] [Film formation process]

以下,作為基板處理方法的一例,說明塗佈單元U1中所執行的成膜處理程序。如圖5所示,控制部100首先依序執行步驟S01、S02。於步驟S01中,於保持部21保持晶圓W的狀態下,旋轉控制部119控制旋轉保持部20,俾開始進行旋轉驅動部22所執行之晶圓W的旋轉。步驟S02,係控制塗佈液供給部30及驅動部40俾將塗佈液塗佈至晶圓W的表面Wa之步驟。具體內容於後說明。 Hereinafter, as an example of a substrate processing method, a film formation processing procedure executed in the coating unit U1 will be described. As shown in FIG. 5 , the control unit 100 first executes steps S01 and S02 in sequence. In step S01 , the rotation control unit 119 controls the rotation holding unit 20 so that the rotation of the wafer W by the rotation driving unit 22 is started while the wafer W is held by the holding unit 21 . Step S02 is a step of controlling the coating liquid supply unit 30 and the driving unit 40 so as to apply the coating liquid to the surface Wa of the wafer W. The specific content will be explained later.

其次,控制部100依序執行步驟S03、S04。步驟S03、S04,係控制旋轉保持部20俾使利用步驟S02所形成的塗佈液的液膜乾燥而形成覆膜之步驟。於步驟S03中,旋轉控制部119控制旋轉保持部20,俾將晶圓W的轉速變更為事先所設定之乾燥用的轉速。於步驟S04中,旋轉控制部119待機以等候事先所設定之乾燥期間經過。 Next, the control unit 100 executes steps S03 and S04 in sequence. Steps S03 and S04 are steps of controlling the rotation holding unit 20 so that the liquid film of the coating liquid formed in step S02 is dried to form a coating. In step S03, the rotation control unit 119 controls the rotation holding unit 20 so as to change the rotation speed of the wafer W to the rotation speed set in advance for drying. In step S04, the rotation control part 119 stands by and waits for the drying period set beforehand to pass.

其次,控制部100依序執行步驟S05、S06。步驟S05、S06,係控制去除液供給部50及驅動部60俾去除藉由步驟S02、S03、S04所形成的覆膜的周緣部之步驟。於步驟S05中,旋轉控制部119控制旋轉保持部20,俾將晶圓W的轉速變更為事先所設定之周緣去除用的轉速。步驟S06,係控制去除液供給部50及驅動部60俾對晶圓W的周緣部供給去除液之步驟。具體內容於後說明。 Next, the control unit 100 executes steps S05 and S06 in sequence. Steps S05 and S06 are steps of controlling the removing liquid supply unit 50 and the driving unit 60 so as to remove the peripheral portion of the film formed in steps S02, S03 and S04. In step S05 , the rotation control unit 119 controls the rotation holding unit 20 so as to change the rotation speed of the wafer W to the preset rotation speed for removing the periphery. Step S06 is a step of controlling the removal liquid supply unit 50 and the drive unit 60 so as to supply the removal liquid to the peripheral portion of the wafer W. The specific content will be explained later.

其次,控制部100依序執行步驟S07、S08、S09。於步驟S07中,旋轉控制部119控制旋轉保持部20,俾將晶圓W的轉速變更為事先所設定之乾燥用的轉速。於步驟S08中,旋轉控制部119待機以等候事先所設定之乾燥期間經過。於步驟S09中,旋轉控制部119控制旋轉保持部20俾使旋轉驅動部22所執行之晶圓W的旋轉停止。以上至此,成膜程序結束。 Next, the control unit 100 executes steps S07, S08, and S09 in sequence. In step S07, the rotation control unit 119 controls the rotation holding unit 20 so as to change the rotation speed of the wafer W to the rotation speed set in advance for drying. In step S08, the rotation control part 119 stands by and waits for the drying period set beforehand to pass. In step S09 , the rotation control unit 119 controls the rotation holding unit 20 so that the rotation of the wafer W performed by the rotation driving unit 22 is stopped. So far, the film forming procedure ends.

(塗佈處理程序) (coating process)

接著,例示上述步驟S02的具體程序。如圖6所示,控制部100依序執行步驟S11、S12、S13、S14、S15。於步驟S11中,塗佈液噴嘴移動控制部112控制驅動部40,俾使移動體31從上述待機位置往上述塗佈目標位置移動。藉此,塗佈液噴嘴32移動至晶圓W的中心上(參考圖7之(a))。於步驟S12中,塗佈液供給控制部111控制塗佈液供給部30,俾開始進行塗佈液L1從塗佈液源33往塗佈液噴嘴32的供給(參考圖7之(b))。於步驟S13中,塗佈液供給控制部111待機以等候事先所設定之塗佈期間經過。於步驟S14中,塗佈液供給控制部111控制塗佈液供給部30,俾停止塗佈液從塗佈液源33往塗佈液噴嘴32的供給。於步驟S15中,塗佈液噴嘴移動控制部112控制驅動部40,俾使移動體31從上述塗佈目標位置往上述待機位置移動(參考圖7之(c))。藉此,塗佈液噴嘴32移動至晶圓W的周緣Wc外。以上至此,塗佈處理程序結束。藉由塗佈處理程序的執行,於晶圓W的表面Wa上形成塗佈液L1的液膜。 Next, a specific procedure of the above-mentioned step S02 will be exemplified. As shown in FIG. 6 , the control unit 100 executes steps S11 , S12 , S13 , S14 , and S15 in sequence. In step S11, the coating liquid nozzle movement control part 112 controls the drive part 40 so that the moving body 31 may move from the said standby position to the said coating target position. Thereby, the coating liquid nozzle 32 moves to the center of the wafer W (refer FIG. 7(a)). In step S12, the coating liquid supply control part 111 controls the coating liquid supply part 30, so that the supply of the coating liquid L1 from the coating liquid source 33 to the coating liquid nozzle 32 is started (refer to FIG. 7 (b)) . In step S13, the coating liquid supply control part 111 stands by and waits for the coating period set beforehand to pass. In step S14 , the coating liquid supply control unit 111 controls the coating liquid supply unit 30 so as to stop the supply of the coating liquid from the coating liquid source 33 to the coating liquid nozzle 32 . In step S15, the coating liquid nozzle movement control part 112 controls the drive part 40 so that the moving body 31 may move from the said coating target position to the said standby position (refer FIG.7(c)). Thereby, the coating liquid nozzle 32 moves outside the peripheral edge Wc of the wafer W. As shown in FIG. So far, the coating processing procedure has ended. A liquid film of the coating liquid L1 is formed on the surface Wa of the wafer W through the execution of the coating processing program.

(周緣去除處理程序) (peripheral removal handler)

接著,例示上述步驟S06的具體程序。此程序包含下述步驟:控制驅動部60,俾使移動體51從上述待機位置往上述去除目標位置移動;及根據於移動體51從待機位置往去除目標位置的移動途中所檢測到的有關移動體51位置的資訊和對 驅動部60之控制指令的關係,修正對驅動部60之控制指令,俾縮小移動體51的移動結束位置和去除目標位置的偏差。 Next, a specific procedure of the above-mentioned step S06 will be exemplified. This program comprises the steps of: controlling the drive unit 60 so that the mobile body 51 moves from the above-mentioned standby position to the above-mentioned removal target position; Body 51 location information and support The relationship between the control commands of the drive unit 60 is to correct the control commands to the drive unit 60 so as to reduce the deviation between the movement end position of the moving body 51 and the removal target position.

如圖8所示,控制部100首先執行步驟S21。於步驟S21中,去除液噴嘴移動控制部114將使移動體51從待機位置移動至暫時停止目標位置的控制指令(以下,稱「去程第一控制指令」)輸出至驅動部60。驅動部60因應去程第一控制指令使移動體51移動後暫時停止(參考圖10之(a))。暫時停止目標位置,係設定成去除液噴嘴52不會到達晶圓W的周緣Wc上。 As shown in FIG. 8, the control unit 100 first executes step S21. In step S21 , the removal liquid nozzle movement control unit 114 outputs a control command (hereinafter referred to as “first forward control command”) to move the moving body 51 from the standby position to the temporary stop target position to the drive unit 60 . The driving unit 60 temporarily stops the moving body 51 after moving in response to the first control command of the forward journey (refer to (a) of FIG. 10 ). The temporary stop target position is set so that the removal liquid nozzle 52 does not reach the peripheral edge Wc of the wafer W. As shown in FIG.

其次,控制部100執行步驟S22、S23、S24。於步驟S22中,控制指令修正部117待機以等候用以使移動體51的振動衰減而事先所設定之待機時間經過。於步驟S23中,控制指令修正部117取得由感測器70所檢測到的資訊。於步驟S24中,控制指令修正部117根據在步驟S23中取得的資訊和去程控制指令的關係,修正去程控制指令,俾縮小移動體51的移動結束位置和去除目標位置的偏差。例如,控制指令修正部117根據基於在步驟S23中取得的資訊而得之移動體51的位置(以下,稱「現在位置」)和上述暫時停止目標位置的關係,計算移動體51的位置相對於去程控制指令的偏差,而修正從暫時停止目標位置至去除目標位置的控制指令(以下,稱「去程第二控制指令」),俾縮小該偏差。更具體而言,於移動體51的現在位置未到達上述暫時停止目標位置的情形時,控制指令修正部117修正去程第二控制指令,俾使再度開始移動後之移動體51的移動距離加長。另一方面,於移動體51的現在位置超過上述暫時停止目標位置的情形時,控制指令修正部117修正去程第二控制指令,俾使再度開始移動後之移動體51的移動距離縮短。 Next, the control unit 100 executes steps S22, S23, and S24. In step S22 , the control command correction unit 117 waits for the elapse of the standby time set in advance for attenuating the vibration of the mobile body 51 on standby. In step S23 , the control command modification unit 117 obtains the information detected by the sensor 70 . In step S24, the control instruction modification unit 117 modifies the outbound control instruction according to the relationship between the information obtained in step S23 and the outbound control instruction, so as to reduce the deviation between the moving end position of the mobile body 51 and the removal target position. For example, the control command correction unit 117 calculates the position of the mobile body 51 relative to The deviation of the outbound control command is corrected from the temporary stop target position to the removal target position (hereinafter referred to as "the second outbound control command") so as to reduce the deviation. More specifically, when the current position of the mobile body 51 has not reached the above-mentioned temporary stop target position, the control command modification unit 117 modifies the second control command of the forward journey so that the moving distance of the mobile body 51 after restarting the movement is lengthened. . On the other hand, when the current position of the mobile body 51 exceeds the temporary stop target position, the control command modification unit 117 modifies the second outbound control command so that the moving distance of the mobile body 51 after the resumption of movement is shortened.

其次,控制部100執行步驟S25、S26、S27。於步驟S25中,去除液供給控制部113控制去除液供給部50,俾開始進行去除液L2從去除液源53往去除液噴嘴52的供給(參考圖10之(b))。於步驟S26中,去除液噴嘴移動控制部114待機以等候事先所設定之模擬噴吐時間經過。於步驟S27中,將在步驟S24中經修正之去程第二控制指令輸出至驅動部60。驅動部60因應去程第二控制指令使移動體51的移動再度開始,並於使移動體51移動至去除目標位置或其附近後暫時停止。藉此,將去除液L2供給至晶圓W的周緣部(參考圖10之(c))。 Next, the control unit 100 executes steps S25, S26, and S27. In step S25, the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so as to start supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 (see (b) of FIG. 10 ). In step S26, the removal liquid nozzle movement control part 114 stands by and waits for the elapse of the simulated discharge time set in advance. In step S27 , output the outbound second control command corrected in step S24 to the drive unit 60 . The driving unit 60 restarts the movement of the mobile body 51 in response to the second control command of the forward stroke, and temporarily stops the movement of the mobile body 51 after moving the mobile body 51 to the removal target position or its vicinity. Thereby, the removal liquid L2 is supplied to the peripheral part of the wafer W (refer (c) of FIG. 10).

如圖9所示,控制部100接著依序執行步驟S31、S32、S33。於步驟S31中,修正量調整部118待機以等候用以使移動體51的振動衰減而事先所設定之待機時間經過。於步驟S32中,修正量調整部118取得由感測器70所檢測到的資訊。於步驟S33中,修正量調整部118根據基於在步驟S32中取得的資訊而得之移動體51的位置(以下,稱「現在位置」)和去除目標位置的偏差,調整下次以後之步驟S24中的控制指令的修正量。更具體而言,修正量調整部118根據移動體51的現在位置和去除目標位置的偏差,於判斷在步驟S24中的修正量為過小的情形時,增加下次以後之步驟S24中的修正量;於判斷在步驟S24中的修正量為過大的情形時,減少下次以後之步驟S24中的修正量。例如,修正量調整部118於即使將步驟S24中再度開始移動後的移動距離加長移動體51的現在位置仍未到達去除目標位置的情形、或即使將步驟S24中再度開始移動後的移動距離縮短移動體51的現在位置仍超過去除目標位置的情形時,增加下次以後之步驟S24中的修正量。另一方面,修正量調整部118於將步驟S24中再度開始移動後的移動距離加長而使得移動體51的移動結束位置超過去除目標位置的情形、或將步驟S24中再度開始移動後的移動距離縮短而使得移動體51的移動結束位置未到達去除目標位置的情形時,減少下次以後之步驟S24中的修正量。 As shown in FIG. 9 , the control unit 100 then executes steps S31 , S32 , and S33 in sequence. In step S31 , the correction amount adjustment unit 118 waits for the elapse of a standby time set in advance for attenuating the vibration of the moving body 51 . In step S32 , the correction amount adjustment unit 118 acquires information detected by the sensor 70 . In step S33, the correction amount adjustment unit 118 adjusts the deviation between the position of the moving body 51 obtained based on the information obtained in step S32 (hereinafter referred to as "current position") and the removed target position, and adjusts the next step S24. The correction amount of the control instruction in . More specifically, the correction amount adjustment unit 118 increases the correction amount in the next and subsequent steps S24 when it is judged that the correction amount in step S24 is too small based on the deviation between the current position of the mobile body 51 and the removal target position. ; When judging that the correction amount in step S24 is too large, reduce the correction amount in the next and subsequent steps S24. For example, the correction amount adjustment unit 118 may adjust the position of the moving body 51 even if the current position of the moving body 51 has not reached the removal target position even if the movement distance after the restart of the movement in step S24 is increased, or even if the movement distance after the restart of the movement in step S24 is shortened. If the current position of the mobile body 51 still exceeds the removal target position, the correction amount in step S24 after the next time is increased. On the other hand, when the correction amount adjusting unit 118 increases the movement distance after restarting movement in step S24 so that the movement end position of the moving body 51 exceeds the removal target position, or increases the movement distance after restarting movement in step S24 In the case where the movement end position of the mobile body 51 does not reach the removal target position due to shortening, the correction amount in step S24 after the next time is decreased.

其次,控制部100執行步驟S34、S35、S36。於步驟S34中,去除液噴嘴移動控制部114將用以使移動體51從去除目標位置移動至暫時停止目標位置的控制指令(以下,稱「回程第一控制指令」)輸出至驅動部60。驅動部60於因應回程第一控制指令使移動體51移動後暫時停止(參考圖11之(a))。於步驟S35中,去除液供給控制部113控制去除液供給部50,俾停止去除液L2從去除液源53往去除液噴嘴52的供給。於步驟S36中,去除液噴嘴移動控制部114將使移動體51從暫時停止目標位置移動至待機位置的控制指令(以下,稱「回程第二控制指令」)輸出至驅動部60。驅動部60於因應回程第二控制指令使移動體51移動後停止(參考圖11之(b))。以上至此,周緣去除處理程序結束。藉由周緣去除處理程序的執行,將表面Wa上的覆膜F1(藉由上述步驟S03、S04而形成的覆膜)的周緣部去除。 Next, the control unit 100 executes steps S34, S35, and S36. In step S34 , the removal liquid nozzle movement control unit 114 outputs a control command (hereinafter referred to as “return first control command”) for moving the moving body 51 from the removal target position to the temporary stop target position to the driving unit 60 . The driving unit 60 stops temporarily after moving the moving body 51 in response to the first control command of the return stroke (refer to (a) of FIG. 11 ). In step S35 , the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so as to stop the supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 . In step S36 , the removal liquid nozzle movement control unit 114 outputs a control command for moving the moving body 51 from the temporary stop target position to the standby position (hereinafter referred to as “second return control command”) to the drive unit 60 . The driving unit 60 stops after moving the moving body 51 in response to the second control command of the return stroke (refer to (b) of FIG. 11 ). From the above, the peripheral edge removal processing program ends. By executing the peripheral edge removal processing program, the peripheral edge portion of the coating film F1 (the coating film formed in the above steps S03 and S04 ) on the surface Wa is removed.

[本實施形態的效果] [Effect of this embodiment]

如上所述,塗佈/顯影裝置2具備:去除液供給部50,具有用以對晶圓W的周緣部噴吐去除液的去除液噴嘴52;驅動部60,使包括去除液噴嘴52之移動體51移動;感測器70,檢測有關移動體51位置的資訊;控制部100,構成為執行下述步驟:將用以使移動體51從去除液噴嘴52配置在晶圓W的周緣Wc外之第一位置P1移動至去除液噴嘴52配置於晶圓W的周緣部上之第二位置P2的控制指令,輸出至驅動部60;及根據於移動體51從第一位置P1往第二位置P2的移動途中由感測器70所檢測到的資訊和控制指令的關係,修正控制指令,俾縮小移動體51的移動結束位置和第二位置P2的偏差。 As described above, the coating/developing device 2 includes: the removal liquid supply unit 50 having the removal liquid nozzle 52 for spraying the removal liquid to the peripheral portion of the wafer W; 51 moves; the sensor 70 detects information about the position of the moving body 51; the control unit 100 is configured to execute the following steps: disposing the moving body 51 from the removing liquid nozzle 52 outside the periphery Wc of the wafer W; The first position P1 is moved to the control command of the second position P2 where the removal liquid nozzle 52 is arranged on the peripheral portion of the wafer W, and is output to the drive unit 60; and according to the moving body 51 from the first position P1 to the second position P2 The relationship between the information detected by the sensor 70 and the control command during the movement of the mobile body 51 is used to modify the control command so as to reduce the deviation between the end position of the moving body 51 and the second position P2.

依據此塗佈/顯影裝置2,於移動體51的移動途中檢測有關移動體51位置的資訊,根據該資訊修正控制指令,藉此可縮小移動體51的移動結束位置和第二位 置P2的偏差。又,依據根據有關移動體51位置的資訊和控制指令的關係的方式,因不必如檢測晶圓W的周緣Wc方式般地在移動體51本身配置感測器70,故可避免例如因感測器70的配置所導致之移動體51的大型化等。又,藉由根據有關移動體51位置的資訊和控制指令的關係,可不用檢測晶圓W的周緣Wc等,能於任意時點有餘裕地修正控制指令。因此,本塗佈/顯影裝置2可有效提升去除液對晶圓W周緣部之供給位置的精確度。 According to this coating/developing device 2, information about the position of the moving body 51 is detected during the movement of the moving body 51, and the control command is corrected based on the information, whereby the movement end position and the second position of the moving body 51 can be narrowed down. Set the deviation of P2. In addition, according to the method based on the relationship between the information on the position of the moving body 51 and the control command, it is not necessary to arrange the sensor 70 on the moving body 51 itself as in the method of detecting the periphery Wc of the wafer W, so it is possible to avoid, for example, the detection of The enlargement of the mobile body 51 due to the arrangement of the device 70 and the like. In addition, based on the relationship between the information on the position of the movable body 51 and the control command, it is possible to correct the control command at any point of time without detecting the peripheral edge Wc of the wafer W or the like. Therefore, the coating/developing device 2 can effectively improve the accuracy of the supply position of the removal liquid to the peripheral portion of the wafer W.

圖12係動作次數和從目標位置算起之偏離量的關係的例示圖。「從目標位置算起之偏離量」,係因應去程控制指令而得之移動體51的移動結束位置和去除目標位置的偏差。圖形中的虛線,表示未進行控制指令修正部117所執行之控制指令的修正時之目標位置的偏離量。圖形中的實線,表示進行控制指令修正部117所執行之控制指令的修正時之目標位置的偏離量。 Fig. 12 is an illustration of the relationship between the number of operations and the amount of deviation from the target position. The "deviation amount calculated from the target position" refers to the deviation between the movement end position of the mobile body 51 obtained in response to the outbound control command and the removed target position. The dotted line in the graph indicates the amount of deviation from the target position when no correction of the control command executed by the control command correction unit 117 is performed. The solid line in the graph represents the amount of deviation from the target position when the control command executed by the control command correcting unit 117 is corrected.

以虛線所示的偏離量,於動作次數少的階段大幅超出上限值UL及下限值LL的範圍內,而隨著動作次數增加而緩慢收斂於上限值UL及下限值LL的範圍內。吾人認為此係因確動傳送帶64的伸長量緩慢穩定所致。但是,即使收斂於上限值UL及下限值LL的範圍內之後,以虛線所示的偏離量仍多次達到接近下限值LL的值。吾人認為此係因於確動傳送帶64的伸長量穩定後,尚存有減速機63的背隙等的影響所致。相對於此,以實線所示的偏離量,即使於動作次數為少的階段,亦具有足夠裕度而收斂於上限值UL及下限值LL的範圍內,此傾向即使動作次數增加亦相同。如此,藉由控制指令修正部117來進行控制指令的修正,可有效提升處理液對基板周緣部之供給位置的精確度。 The deviation shown by the dotted line greatly exceeds the range of the upper limit UL and the lower limit LL when the number of operations is small, and gradually converges to the range of the upper limit UL and the lower limit LL as the number of operations increases Inside. We think that this is due to the slow and steady elongation of the conveyor belt 64 . However, even after converging within the range of the upper limit value UL and the lower limit value LL, the amount of deviation shown by the dotted line reaches a value close to the lower limit value LL many times. We think that this is due to the influence of the backlash of the speed reducer 63 and the like after the elongation of the conveyor belt 64 is confirmed to be stable. On the other hand, the deviation shown by the solid line has enough margin to converge within the range of the upper limit UL and the lower limit LL even when the number of operations is small. same. In this way, the correction of the control command by the control command correction unit 117 can effectively improve the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

控制部100亦可構成更執行下述步驟:控制驅動部60,俾於去除液噴嘴52到達晶圓W的周緣Wc上前,使移動體51從第一位置P1往第二位置P2的移動暫時停止,並於移動體51從第一位置P1往第二位置P2的移動暫時停止時,根據由感測器70所檢測到的資訊,修正控制指令。此情形時,可於去除液噴嘴52到達晶圓W的周緣部上之前的時點,有餘裕地修正控制指令。 The control unit 100 may also be configured to further perform the following steps: control the driving unit 60 so that the moving body 51 temporarily moves from the first position P1 to the second position P2 before the removal liquid nozzle 52 reaches the periphery Wc of the wafer W. stop, and when the movement of the mobile body 51 from the first position P1 to the second position P2 temporarily stops, the control command is corrected according to the information detected by the sensor 70 . In this case, before the removal liquid nozzle 52 reaches the peripheral portion of the wafer W, the control command can be corrected with a margin.

控制部100亦可構成為更執行下述步驟:控制去除液供給部50,俾於移動體51從第一位置P1往第二位置P2的移動暫時停止時,從去除液噴嘴52噴吐去除液。此情形時,利用暫時停止的時點開始進行去除液的噴吐,可抑制噴吐開始時去除液所含的微粒附著於晶圓W。 The control unit 100 may be configured to further execute the step of controlling the removal liquid supply unit 50 so that the removal liquid is sprayed from the removal liquid nozzle 52 when the movement of the moving body 51 from the first position P1 to the second position P2 is temporarily stopped. In this case, the ejection of the removal liquid is started at the timing of the temporary stop, and it is possible to suppress the particles contained in the removal liquid from adhering to the wafer W at the start of the ejection.

控制部100亦可構成為:於移動體51從第一位置P1往第二位置P2的移動暫時停止的期間開始後,根據於用以使移動體51的振動衰減的待機時間經過後由感測器70所檢測到的資訊,修正控制指令。此情形時,可抑制起因於由感測器70所檢測到的資訊的差異而導致去除液的供給位置的精確度降低。 The control unit 100 may also be configured to sense the time after the elapse of the standby time for attenuating the vibration of the mobile body 51 after the period in which the movement of the mobile body 51 from the first position P1 to the second position P2 is temporarily stopped. The information detected by the device 70 is used to modify the control instruction. In this case, it is possible to suppress a reduction in the accuracy of the supply position of the removal liquid due to a difference in information detected by the sensor 70 .

控制部100亦可構成為更執行下述步驟:根據因應修正後控制指令而得之移動體51的移動結束位置和第二位置P2的偏差,調整控制指令的修正量。此情形時,可更縮小移動體51的移動結束位置和第二位置P2的偏差。 The control unit 100 may also be configured to further execute the step of adjusting the correction amount of the control command according to the deviation between the movement end position of the moving body 51 obtained in response to the corrected control command and the second position P2. In this case, the deviation between the movement end position of the moving body 51 and the second position P2 can be further reduced.

[變形例] [modified example]

控制部100亦可構成為:於移動體51從第一位置P1往第二位置P2的移動暫時停止的期間開始後,導出於較移動體51的振動週期為長的既定期間中由感測器70所檢測到的資訊的統計值,根據該統計值,修正控制指令。此情形時,可抑 制起因於位置資訊的差異而導致去除液之供給位置的精確度降低。以下,具體例示如此構成的控制部100所執行之周緣去除處理程序。如圖13所示,控制部100首先執行步驟S41。於步驟S41中,與步驟S21相同,去除液噴嘴移動控制部114將上述去程第一控制指令輸出至驅動部60。 The control unit 100 may also be configured such that, after the period in which the movement of the moving body 51 from the first position P1 to the second position P2 is temporarily stopped, it is derived by the sensor during a predetermined period longer than the vibration cycle of the moving body 51. 70 Statistical value of the detected information, and modify the control command according to the statistical value. In this case, the The accuracy of the supply position of the removal liquid is reduced due to the difference in position information. Hereinafter, the peripheral edge removal processing program executed by the control unit 100 configured in this way will be specifically exemplified. As shown in FIG. 13 , the control unit 100 first executes step S41. In step S41 , similar to step S21 , the removing liquid nozzle movement control unit 114 outputs the above-mentioned forward first control command to the drive unit 60 .

其次,控制部100執行步驟S42、S43。於步驟S42中,控制指令修正部117取得由感測器70所檢測到的資訊。於步驟S43中,控制指令修正部117確認事先設定成較移動體51的振動週期為長的資料收集期間是否已過。於步驟S43中,於判定資料收集期間尚未經過的情形時,控制部100使處理返回至步驟S42。之後,重複取得由感測器70所檢測到的資訊,直至資料收集期間經過為止。 Next, the control unit 100 executes steps S42 and S43. In step S42 , the control command modification unit 117 acquires information detected by the sensor 70 . In step S43 , the control command correction unit 117 checks whether or not the data collection period set in advance to be longer than the vibration period of the mobile body 51 has elapsed. In step S43, when it is determined that the data collection period has not passed, the control unit 100 returns the process to step S42. Afterwards, the information detected by the sensor 70 is repeatedly obtained until the data collection period passes.

於步驟S43中,於判定資料收集期間已過的情形時,控制部100執行步驟S44。於步驟S44中,控制指令修正部117導出於步驟S42中由感測器70所檢測到的資訊的統計值(例如平均值)。 In step S43, when it is determined that the data collection period has passed, the control unit 100 executes step S44. In step S44 , the control instruction modifying unit 117 derives a statistical value (for example, an average value) of the information detected by the sensor 70 in step S42 .

其次,控制部100執行步驟S45。於步驟S45中,控制指令修正部117根據在步驟S44導出的統計值和去程第一控制指令的關係,修正去程控制指令,俾縮小移動體51的移動結束位置和去除目標位置的偏差。步驟S45的具體處理內容,除了使用上述統計值作為由感測器70所檢測到的資訊之點外,與上述步驟S24相同。 Next, the control unit 100 executes step S45. In step S45, the control instruction modification unit 117 modifies the outbound control instruction according to the relationship between the statistical value derived in step S44 and the first outbound control instruction, so as to reduce the deviation between the moving end position of the mobile body 51 and the removal target position. The specific processing content of step S45 is the same as the above step S24 except that the above statistical value is used as the point of information detected by the sensor 70 .

其次,控制部100依序執行與步驟S25、S26、S27相同之步驟S46、S47、S48。於步驟S46中,去除液供給控制部113控制去除液供給部50,俾開始進行去除液L2從去除液源53往去除液噴嘴52的供給。於步驟S47中,去除液噴嘴移動控制部 114待機以等候事先所設定之模擬噴吐時間經過。於步驟S48中,將在步驟S45中經修正之去程第二控制指令輸出至驅動部60。 Next, the control unit 100 sequentially executes steps S46, S47, and S48 that are the same as steps S25, S26, and S27. In step S46 , the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so as to start supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 . In step S47, the remover nozzle movement control unit 114 Stand by to wait for the simulated spraying time set in advance to pass. In step S48 , output the outbound second control command corrected in step S45 to the drive unit 60 .

如圖14所示,控制部100接著執行步驟S51、S52。於步驟S51中,控制指令修正部117取得由感測器70所檢測到的資訊。於步驟S52中,控制指令修正部117確認事先設定成較移動體51的振動週期為長的資料收集期間是否已過。於步驟S52中,於判定資料收集期間尚未經過的情形時,控制部100使處理返回至步驟S52。之後,重複取得由感測器70所檢測到的資訊,直至資料收集期間經過為止。 As shown in FIG. 14 , the control unit 100 then executes steps S51 and S52. In step S51 , the control instruction modification unit 117 acquires information detected by the sensor 70 . In step S52 , the control command correction unit 117 checks whether or not the data collection period set in advance to be longer than the vibration period of the mobile body 51 has elapsed. In step S52, when it is determined that the data collection period has not passed, the control unit 100 returns the process to step S52. Afterwards, the information detected by the sensor 70 is repeatedly obtained until the data collection period passes.

於步驟S52中,於判定資料收集期間已過的情形時,控制部100執行步驟S53。於步驟S53中,控制指令修正部117導出於步驟S52中由感測器70所檢測到的資訊的統計值(例如平均值)。 In step S52, when it is determined that the data collection period has passed, the control unit 100 executes step S53. In step S53 , the control instruction modifying unit 117 derives a statistical value (for example, an average value) of the information detected by the sensor 70 in step S52 .

其次,控制部100執行步驟S54。於步驟S54中,修正量調整部118根據基於在步驟S53中導出的統計值而得之移動體51的位置(以下,稱「現在位置」)和去除目標位置的偏差,調整下次以後之步驟S45中的控制指令的修正量。步驟S54的具體處理內容,除了使用上述統計值作為由感測器70所檢測到的資訊之點外,與上述步驟S33相同。 Next, the control unit 100 executes step S54. In step S54, the correction amount adjustment unit 118 adjusts the next step and subsequent steps based on the deviation between the position of the mobile body 51 obtained based on the statistical value derived in step S53 (hereinafter referred to as "current position") and the removed target position. The correction amount of the control command in S45. The specific processing content of step S54 is the same as the above step S33 except that the above statistical value is used as the point of information detected by the sensor 70 .

其次,控制部100依序執行與步驟S34、S35、S36相同之步驟S55、S56、S57。於步驟S55中,去除液噴嘴移動控制部114將上述回程第一控制指令輸出至驅動部60。於步驟S56中,去除液供給控制部113控制去除液供給部50,俾停止去除液L2從去除液源53往去除液噴嘴52的供給。於步驟S57中,去除液噴嘴移動控制 部114將上述回程第二控制指令輸出至驅動部60。以上至此,周緣去除處理程序結束。 Next, the control unit 100 sequentially executes steps S55 , S56 , and S57 that are the same as steps S34 , S35 , and S36 . In step S55 , the removing liquid nozzle movement control unit 114 outputs the above-mentioned return first control command to the driving unit 60 . In step S56 , the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so as to stop the supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 . In step S57, the removal liquid nozzle movement control The part 114 outputs the above-mentioned backhaul second control command to the drive part 60 . From the above, the peripheral edge removal processing program ends.

控制部亦可構成為使於待機位置和去除目標位置間之移動體51的移動不要暫時停止。以下,具體例示如此構成的控制部100所執行之周緣去除處理程序。 The control unit may be configured so that the movement of the moving body 51 between the standby position and the removal target position does not temporarily stop. Hereinafter, the peripheral edge removal processing program executed by the control unit 100 configured in this way will be specifically exemplified.

如圖15所示,控制部100首先依序執行步驟S61、S62。於步驟S61中,去除液噴嘴移動控制部114依照去程控制指令控制驅動部60,俾開始進行移動體51從待機位置往去除目標位置的移動。於步驟S62中,去除液供給控制部113待機以等候用以使移動體51移動之驅動部60的控制的進展到達事先設定之噴吐開始階段。噴吐開始階段,例如,係用以使移動體51移動至事先設定之噴吐開始位置的控制指令(以下,稱「去程第一控制指令」)的輸出結束之階段。 As shown in FIG. 15 , the control unit 100 first executes steps S61 and S62 in sequence. In step S61 , the removal liquid nozzle movement control unit 114 controls the driving unit 60 according to the forward stroke control command, so as to start moving the moving body 51 from the standby position to the removal target position. In step S62 , the removal liquid supply control unit 113 waits for the progress of the control of the drive unit 60 for moving the moving body 51 to reach a predetermined discharge start stage. The discharge start stage is, for example, a stage in which the output of a control command (hereinafter referred to as "the first outbound control command") for moving the mobile body 51 to a preset discharge start position is completed.

其次,控制部100依序執行與步驟S23、S24、S25相同之步驟S63、S64、S65。於步驟S63中,控制指令修正部117取得由感測器70所檢測到的資訊。於步驟S64中,控制指令修正部117根據於步驟S63中取得的資訊和去程第一控制指令的關係,修正去程控制指令,俾縮小移動體51的移動結束位置和去除目標位置的偏差。於步驟S65中,去除液供給控制部113控制去除液供給部50,俾開始進行去除液L2從去除液源53往去除液噴嘴52的供給。 Next, the control unit 100 sequentially executes steps S63, S64, and S65 that are the same as steps S23, S24, and S25. In step S63 , the control command modification unit 117 obtains the information detected by the sensor 70 . In step S64, the control instruction modifying unit 117 modifies the outbound control instruction according to the relationship between the information obtained in step S63 and the first outbound control instruction, so as to reduce the deviation between the moving end position of the mobile body 51 and the removal target position. In step S65 , the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so as to start supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 .

其次,控制部100依序執行步驟S66、S67。於步驟S66中,去除液噴嘴移動控制部114待機以等候用以使移動體51移動之驅動部60的控制的進展到達事先設定之移動停止階段。移動停止階段,係在步驟S64中經修正之去程控制指令的 輸出結束之階段。於步驟S67中,去除液供給控制部113控制驅動部60,俾使移動體51的移動停止。 Next, the control unit 100 executes steps S66 and S67 in sequence. In step S66, the removal liquid nozzle movement control part 114 waits for progress of the control of the drive part 60 for moving the moving body 51 to reach the preset movement stop stage. The mobile stop stage is the step S64 of the amended outgoing control command. The stage at which the output ends. In step S67, the removal liquid supply control unit 113 controls the drive unit 60 so that the movement of the moving body 51 is stopped.

如圖16所示,控制部100接著依序執行與步驟S32、S33相同之步驟S71、S72。於步驟S71中,修正量調整部118取得由感測器70所檢測到的資訊。於步驟S72中,修正量調整部118根據基於在步驟S71中取得的資訊而得之移動體51的位置和去除目標位置的偏差,調整下次以後之步驟S64中的控制指令的修正量。 As shown in FIG. 16 , the control unit 100 then sequentially executes steps S71 and S72 that are the same as steps S32 and S33 . In step S71 , the correction amount adjustment unit 118 acquires information detected by the sensor 70 . In step S72, the correction amount adjustment unit 118 adjusts the correction amount of the control command in the next and subsequent steps S64 based on the deviation between the position of the moving body 51 obtained based on the information acquired in step S71 and the removal target position.

其次,控制部100依序執行步驟S73、S74、S75、S76、S77。於步驟S73中,去除液噴嘴移動控制部114依照回程控制指令控制驅動部60,俾開始進行移動體51從去除目標位置往待機位置的移動。於步驟S74中,去除液供給控制部113待機以等候用以使移動體51移動之驅動部60的控制的進展到達事先設定之噴吐停止階段。噴吐停止階段,例如,係用以使移動體51移動至事先設定之噴吐停止位置的控制指令(以下,稱「回程第一控制指令」)的輸出結束之階段。於步驟S75中,去除液供給控制部113控制去除液供給部50,俾停止去除液L2從去除液源53往去除液噴嘴52的供給。於步驟S76中,去除液噴嘴移動控制部114待機以等候用以使移動體51移動之驅動部60的控制的進展到達事先設定之移動停止階段。移動停止階段,係回程控制指令的輸出結束之階段。於步驟S77中,去除液噴嘴移動控制部114控制驅動部60,俾使移動體51的移動停止。以上至此,周緣去除處理程序結束。 Next, the control unit 100 executes steps S73, S74, S75, S76, and S77 in sequence. In step S73 , the removal liquid nozzle movement control unit 114 controls the drive unit 60 according to the return stroke control command, so as to start moving the moving body 51 from the removal target position to the standby position. In step S74 , the removal liquid supply control unit 113 waits for the progress of the control of the drive unit 60 for moving the movable body 51 to reach the predetermined discharge stop stage. The discharge stop stage is, for example, a stage in which the output of a control command (hereinafter referred to as "return first control command") for moving the mobile body 51 to a preset discharge stop position is completed. In step S75 , the removal liquid supply control unit 113 controls the removal liquid supply unit 50 so as to stop the supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 . In step S76, the removal liquid nozzle movement control part 114 waits for progress of the control of the drive part 60 for moving the moving body 51 to reach the preset movement stop stage. The movement stop phase is the phase in which the output of the return control command is completed. In step S77 , the removal liquid nozzle movement control unit 114 controls the drive unit 60 so that the movement of the moving body 51 is stopped. From the above, the peripheral edge removal processing program ends.

以上,針對實施形態加以說明,但本發明並非一定要限定於上述實施形態,於不脫離其主旨的範圍內可由各種變更。對基板的周緣部供給處理液之處理,不限於對基板的周緣部供給上述去除液之處理。對基板的周緣部供給處理液之 處理,亦可為對基板的周緣部供給塗佈液而於基板的周緣部形成覆膜之處理。處理對象的基板不限於半導體晶圓,亦可為例如玻璃基板、光罩基板、FPD(Flat Panel Display:平板顯示器)等。 As mentioned above, although embodiment was demonstrated, this invention is not necessarily limited to the said embodiment, In the range which does not deviate from the summary, various changes are possible. The process of supplying the processing liquid to the peripheral portion of the substrate is not limited to the process of supplying the above-mentioned removal liquid to the peripheral portion of the substrate. Supply the processing liquid to the peripheral part of the substrate The processing may be a process of supplying a coating liquid to the peripheral portion of the substrate to form a coating on the peripheral portion of the substrate. The substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a photomask substrate, an FPD (Flat Panel Display: flat panel display), and the like.

20:旋轉保持部 20: Rotation holding part

21:保持部 21: Keeping Department

22:旋轉驅動部 22: Rotary drive unit

30:塗佈液供給部 30: Coating liquid supply part

31:移動體 31: Moving body

32:塗佈液噴嘴 32: Coating liquid nozzle

33:塗佈液源 33: Coating liquid source

40:驅動部 40: Drive Department

41:動力源 41: power source

42:傳達機構 42: Communication agency

43:減速機 43: reducer

44:確動傳送帶 44: Confirm the conveyor belt

50:去除液供給部(液體供給部) 50: Removal liquid supply part (liquid supply part)

51:移動體 51: Moving body

52:去除液噴嘴(噴嘴) 52: Remover nozzle (nozzle)

53:去除液源 53: Remove the liquid source

60:驅動部 60: drive unit

61:動力源 61: power source

62:傳達機構 62: Communication agency

63:減速機 63: reducer

64:確動傳送帶 64: Confirm the conveyor belt

70:感測器 70: sensor

100:控制部 100: Control Department

111:塗佈液供給控制部 111: Coating solution supply control unit

112:塗佈液噴嘴移動控制部 112: Coating liquid nozzle movement control unit

113:去除液供給控制部 113: Removal liquid supply control part

114:去除液噴嘴移動控制部 114: Remover nozzle movement control unit

116:控制指令保持部 116: Control instruction holding unit

117:控制指令修正部 117: Control Command Correction Department

118:修正量調整部 118: Correction amount adjustment department

119:旋轉控制部 119:Rotary control unit

CL1:旋轉中心 CL1: Center of rotation

P1:第一位置 P1: first position

P2:第二位置 P2: second position

U1:塗佈單元 U1: coating unit

W:晶圓(基板) W: wafer (substrate)

Wa:表面 Wa: surface

Wc:周緣 Wc: Perimeter

Claims (13)

一種基板處理裝置,包含:液體供給部,具有用以對基板的周緣部噴吐處理液的噴嘴;驅動部,使包括該噴嘴的移動體移動;感測器,檢測有關該移動體的位置之資訊;及控制部,執行下述步驟:將用以使移動體從該噴嘴配置於該基板的周緣外之第一位置移動至該噴嘴配置在該基板的周緣部上之第二位置的控制指令,輸出至該驅動部;控制該驅動部,俾於該噴嘴到達該基板的周緣上之前,使該移動體從該第一位置往該第二位置的移動暫時停止;及根據於該移動體從該第一位置往該第二位置的移動途中於該移動體從該第一位置往該第二位置的移動暫時停止時由該感測器所檢測到的該資訊和該控制指令的關係,修正該控制指令,俾縮小該移動體的移動結束位置與該第二位置的偏差。 A substrate processing apparatus comprising: a liquid supply unit having a nozzle for spraying a treatment liquid to a peripheral portion of a substrate; a drive unit for moving a moving body including the nozzle; a sensor for detecting information on the position of the moving body and a control unit that executes the following steps: a control command for moving the moving body from a first position where the nozzle is disposed outside the periphery of the substrate to a second position where the nozzle is disposed on the periphery of the substrate, output to the drive unit; control the drive unit so that the movement of the moving body from the first position to the second position is temporarily stopped before the nozzle reaches the periphery of the substrate; and according to the movement of the moving body from the Correcting the relationship between the information detected by the sensor and the control command when the moving object temporarily stops moving from the first position to the second position during the movement from the first position to the second position. A control command is used to reduce the deviation between the moving end position of the mobile body and the second position. 如申請專利範圍第1項之基板處理裝置,其中,該控制部更執行下述步驟:控制該液體供給部,俾於該移動體從該第一位置往該第二位置的移動暫時停止時,從該噴嘴噴吐該處理液。 The substrate processing apparatus according to claim 1 of the scope of the patent application, wherein the control part further executes the following steps: controlling the liquid supply part so that when the moving body temporarily stops moving from the first position to the second position, The treatment liquid is sprayed from the nozzle. 如申請專利範圍第1或2項之基板處理裝置,其中,該控制部於該移動體從該第一位置往該第二位置的移動暫時停止的期間開始後,根據於用以使該移動體的振動衰減的待機時間經過後由該感測器所檢測到的該資訊,修正該控制指令。 The substrate processing apparatus according to claim 1 or 2 of the scope of the patent application, wherein, after the period in which the movement of the moving body from the first position to the second position is temporarily stopped, the control unit, based on the After the vibration attenuation standby time passes, the information detected by the sensor is used to modify the control command. 如申請專利範圍第1或2項之基板處理裝置,其中, 該控制部於該移動體從該第一位置往該第二位置的移動暫時停止的期間開始後,導出於較該移動體的振動週期為長的既定期間中由該感測器所檢測到的該資訊的統計值,根據該統計值修正該控制指令。 As for the substrate processing device in claim 1 or 2 of the scope of the patent application, wherein, The control unit derives the signal detected by the sensor during a predetermined period longer than the vibration period of the mobile body after the movement of the mobile body from the first position to the second position is temporarily stopped. A statistical value of the information, and modify the control instruction according to the statistical value. 如申請專利範圍第1或2項之基板處理裝置,其中,該控制部更執行下述步驟:根據依照修正後之該控制指令而得之該移動體的移動結束位置和該第二位置的偏差,調整該控制指令的修正量。 The substrate processing apparatus according to claim 1 or 2 of the scope of the patent application, wherein the control unit further executes the following steps: according to the deviation between the movement end position of the moving body and the second position obtained according to the corrected control command , to adjust the correction amount of the control command. 一種基板處理裝置,包含:液體供給部,具有用以對基板的周緣部噴吐處理液的噴嘴;驅動部,使包括該噴嘴的移動體移動;感測器,檢測有關該移動體的位置之資訊;及控制部,執行下述步驟:將用以使移動體從該噴嘴配置於該基板的周緣外之第一位置移動至該噴嘴配置在該基板的周緣部上之第二位置的控制指令,輸出至該驅動部;根據於該移動體從該第一位置往該第二位置的移動途中由該感測器所檢測到的該資訊和該控制指令的關係,修正該控制指令,俾縮小該移動體的移動結束位置與該第二位置的偏差;及根據依照修正後之該控制指令而得之該移動體的移動結束位置和該第二位置的偏差,調整該控制指令的修正量。 A substrate processing apparatus comprising: a liquid supply unit having a nozzle for spraying a treatment liquid to a peripheral portion of a substrate; a drive unit for moving a moving body including the nozzle; a sensor for detecting information on the position of the moving body and a control unit that executes the following steps: a control command for moving the moving body from a first position where the nozzle is disposed outside the periphery of the substrate to a second position where the nozzle is disposed on the periphery of the substrate, output to the driving part; according to the relationship between the information detected by the sensor and the control command during the movement of the mobile body from the first position to the second position, the control command is corrected so as to reduce the The deviation between the moving end position of the mobile body and the second position; and adjusting the correction amount of the control command according to the deviation between the moving end position of the mobile body and the second position obtained according to the corrected control command. 一種基板處理方法,包含下述步驟:控制驅動部,俾使包括用以對基板的周緣部噴吐處理液的噴嘴之移動體,從該噴嘴配置於該基板的周緣外之第一位置,移動至該噴嘴配置在該基板的周緣部上之第二位置; 於該噴嘴到達該基板的周緣上之前,使該移動體從該第一位置往該第二位置的移動暫時停止;及根據該移動體從該第一位置往該第二位置的移動途中於該移動體從該第一位置往該第二位置的移動暫時停止時所檢測到的有關該移動體的位置的資訊和對該驅動部的控制指令的關係,修正對該驅動部的控制指令,俾縮小該移動體的移動結束位置與該第二位置的偏差。 A method for processing a substrate, comprising the steps of: controlling a drive unit so that a moving body including a nozzle for spraying a processing liquid on a peripheral portion of a substrate moves from a first position where the nozzle is disposed outside the peripheral edge of the substrate to the nozzle is disposed at a second position on the peripheral portion of the substrate; temporarily stopping the movement of the moving body from the first position to the second position before the nozzle reaches the periphery of the substrate; The relationship between the information on the position of the mobile body detected when the movement of the mobile body from the first position to the second position is temporarily stopped and the control command to the drive part is corrected so that the control command to the drive part is corrected. The deviation between the movement end position of the mobile body and the second position is reduced. 如申請專利範圍第7項之基板處理方法,更包含下述步驟:於該移動體從該第一位置往該第二位置的移動暫時停止時,從該噴嘴噴吐該處理液。 The substrate processing method according to item 7 of the scope of the patent application further includes the following step: spraying the processing liquid from the nozzle when the movement of the moving body from the first position to the second position is temporarily stopped. 如申請專利範圍第7或8項之基板處理方法,其中,於該移動體從該第一位置往該第二位置的移動暫時停止的期間開始後,根據於用以使該移動體的振動衰減的待機時間經過後所檢測到的該資訊,修正該控制指令。 The substrate processing method according to claim 7 or 8 of the patent claims, wherein after the period in which the movement of the moving body from the first position to the second position is temporarily stopped, the method for attenuating the vibration of the moving body The information detected after the standby time has elapsed is used to modify the control command. 如申請專利範圍第7或8項之基板處理方法,其中,於該移動體從該第一位置往該第二位置的移動暫時停止的期間開始後,導出於較該移動體的振動週期為長的既定期間中所檢測到的該資訊的統計值,根據該統計值修正該控制指令。 The substrate processing method according to claim 7 or 8 of the scope of the patent application, wherein after the period in which the movement of the moving body from the first position to the second position is temporarily stopped, it is derived at a period longer than the vibration period of the moving body The statistical value of the information detected in the predetermined period, and the control instruction is corrected according to the statistical value. 如申請專利範圍第7或8項之基板處理方法,更包含下述步驟:根據依照修正後之該控制指令而得之該移動體的移動結束位置和該第二位置的偏差,調整該控制指令的修正量。 For example, the substrate processing method in item 7 or 8 of the scope of the patent application further includes the following steps: adjusting the control command according to the deviation between the moving end position of the moving body and the second position obtained according to the corrected control command correction amount. 一種基板處理方法,包含下述步驟:控制驅動部,俾使包括用以對基板的周緣部噴吐處理液的噴嘴之移動體,從該噴嘴配置於該基板的周緣外之第一位置,移動至該噴嘴配置在該基板的周緣部上之第二位置;根據該移動體從該第一位置往該第二位置的移動途中所檢測到的有關該移動體的位置的資訊和對該驅動部的控制指令的關係,修正對該驅動部的控制指令,俾縮小該移動體的移動結束位置與該第二位置的偏差;及根據依照修正後之該控制指令而得之該移動體的移動結束位置和該第二位置的偏差,調整該控制指令的修正量。 A method for processing a substrate, comprising the steps of: controlling a drive unit so that a moving body including a nozzle for spraying a processing liquid on a peripheral portion of a substrate moves from a first position where the nozzle is disposed outside the peripheral edge of the substrate to The nozzle is arranged at a second position on the peripheral portion of the substrate; according to the information about the position of the moving body detected during the movement of the moving body from the first position to the second position and the driving part The relationship between the control command, modifying the control command of the drive unit, so as to reduce the deviation between the end position of the moving body and the second position; and the end position of the moving body obtained according to the corrected control command The deviation from the second position is used to adjust the correction amount of the control command. 一種電腦可讀取之記錄媒體,其記錄有用以使一裝置執行如申請專利範圍第7~12項中任一項之基板處理方法的程式。 A computer-readable recording medium, which records a program for enabling a device to execute the substrate processing method according to any one of items 7-12 of the patent application scope.
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