KR20200119312A - Substrate processing apparatus, substrate processing method and storage medium - Google Patents

Abstract

The coating/development device 2 moves a removal liquid supply unit 50 having a removal liquid nozzle 52 for discharging a removal liquid to the periphery of the wafer W, and a moving body 51 including the removal liquid nozzle 52. The wafer from the drive unit 60, the sensor 70 for detecting information on the position of the moving body 51, and the first position P1 where the removal liquid nozzle 52 is disposed outside the peripheral edge Wc of the wafer W. A control command for moving the moving body 51 to the second position P2 where the removal liquid nozzle 52 is disposed on the periphery of (W) is output to the drive unit 60, and the first position P1 2 Based on the relationship between the information detected by the sensor 70 and the control command during the movement of the moving object 51 to the position P2, the deviation between the moving object 51 and the second position P2 is determined. And a control unit 100 configured to perform correction of the control command to be reduced.

Description

Substrate processing apparatus, substrate processing method and storage medium

The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

In Patent Document 1, a nozzle mechanism that dissolves and removes the chemical film formed on the peripheral edge of the semiconductor substrate, a sensor that is attached to the nozzle mechanism to detect the position of the peripheral portion of the semiconductor substrate, a driving mechanism that moves the nozzle mechanism, and the sensor detects Disclosed is an apparatus having a control system for controlling a driving mechanism to dissolve and remove a peripheral portion of a drug film to a desired width based on the signal.

Japanese Patent Laid-Open Publication No. Hei 7-142332

An object of the present disclosure is to provide a substrate processing apparatus effective in improving the accuracy of a supply position of a processing liquid to a peripheral portion of a substrate.

A substrate processing apparatus according to the present disclosure includes a liquid supply unit having a nozzle for discharging a processing liquid at a periphery of a substrate, a driving unit for moving a moving object including the nozzle, a sensor for detecting information on the position of the moving object, and a substrate Outputting a control command to the driving unit for moving the moving object from the first position where the nozzle is placed outside the periphery of the substrate to the second position where the nozzle is placed on the periphery of the substrate, and moving the moving object from the first position to the second position And a control unit configured to perform correction of the control command so as to reduce a deviation between the movement completed position and the second position of the moving object based on the relationship between the information detected by the sensor on the way and the control command.

According to the present substrate processing apparatus, by detecting information on the position of the moving object during movement of the moving object and correcting a control command based on the information, it is possible to reduce the deviation between the moving object's movement completed position and the second position. In addition, according to the method based on the relationship between information about the position of the moving object and the control command, it is not necessary to place a sensor on the moving object itself, as in the method of detecting the periphery of the substrate, so the size of the moving object due to the placement of the sensor, etc. Can be avoided. In addition, based on the relationship between the information on the position of the moving object and the control command, it is possible to correct the control command without detecting the periphery of the substrate or the like with a margin at an arbitrary timing. Therefore, this substrate processing apparatus is effective in improving the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

The control unit further controls the driving unit to temporarily stop the movement of the moving body from the first position to the second position before the nozzle reaches the periphery of the substrate, and the moving body from the first position to the second position It may be configured to correct the control command based on the information detected by the sensor when the movement is temporarily stopped. In this case, the control command can be corrected with a margin at the timing before the nozzle reaches on the periphery of the substrate.

The control unit may be configured to further control the liquid supply unit to discharge the processing liquid from the nozzle when the movement of the moving object from the first position to the second position is temporarily stopped. In this case, it is possible to start discharging of the processing liquid using the timing of the temporary stop, so that particles contained in the processing liquid at the start of discharging can be suppressed from adhering to the substrate.

The control unit is configured to correct the control command based on the information detected by the sensor after the start of a period in which the movement of the moving object from the first position to the second position is temporarily stopped, and after a waiting time for attenuating the vibration of the moving object has elapsed. It may be configured. In this case, it is possible to suppress a decrease in the accuracy of the supply position of the processing liquid due to non-uniformity of information detected by the sensor.

The control unit derives a statistical value of the information detected by the sensor in a predetermined period longer than the vibration period of the moving object after the start of a period in which the movement of the moving object from the first position to the second position temporarily stops, and based on the statistical value Thus, it may be configured to correct the control command. In this case, it is possible to suppress a decrease in the accuracy of the supply position of the processing liquid due to the non-uniformity of the positional information.

The control unit may be configured to further adjust the correction amount of the control command on the basis of the deviation between the movement complete position of the moving object according to the corrected control command and the second position. In this case, it is possible to further reduce the deviation between the moving object and the second position.

The substrate processing method according to the present disclosure includes a nozzle from a first position in which a nozzle for discharging a processing liquid is disposed outside the circumference of the substrate to a second position in which the nozzle is disposed on the circumference of the substrate, Completion of movement of the moving object based on the relationship between controlling the driving unit to move the moving object, the position of the moving object detected during the movement of the moving object from the first position to the second position, and a control command to the driving unit And correcting a control command for the driving unit to reduce a deviation between the position and the second position.

The storage medium according to the present disclosure is a computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method.

According to the present disclosure, it is possible to provide a substrate processing apparatus effective in improving the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

1 is a perspective view showing a schematic configuration of a substrate liquid treatment system.
2 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus.
3 is a schematic diagram showing a schematic configuration of an application unit.
4 is a block diagram showing a hardware configuration of a control unit.
5 is a flowchart showing a film forming process procedure.
6 is a flow chart showing the procedure of coating treatment.
7 is a schematic diagram showing a state of a wafer during execution of a coating process.
8 is a flow chart showing the procedure of removing the main edge.
9 is a flow chart showing a procedure for removing a peripheral edge.
10 is a schematic diagram showing a state of a wafer during execution of a peripheral edge removal process.
11 is a schematic diagram showing a state of a wafer during execution of a peripheral edge removal process.
12 is a graph illustrating the relationship between the number of operations and the amount of shift from the target position.
13 is a flowchart showing a modified example of the procedure for removing the peripheral edge.
14 is a flowchart showing a modified example of the procedure for removing the peripheral edge.
15 is a flowchart showing another modified example of the procedure for removing the peripheral edge.
16 is a flowchart showing another modified example of the procedure for removing the peripheral edge.

[Substrate processing system]

The substrate processing system 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on a substrate. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film. The substrate processing system 1 includes a coating/developing device 2 and an exposure device 3. The exposure apparatus 3 performs exposure processing of a resist film (photosensitive film) formed on the wafer W (substrate). Specifically, energy rays are irradiated to the exposed portion of the resist film by a method such as liquid immersion exposure. The coating/development apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before exposure treatment by the exposure apparatus 3, and then develops the resist film after the exposure treatment.

<Substrate processing device>

Hereinafter, as an example of the substrate processing apparatus, the configuration of the coating and developing apparatus 2 will be described. 1 and 2, the coating/developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control unit 100.

The carrier block 4 introduces the wafer W into the coating/development apparatus 2 and carries out the wafer W from the coating/development apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for wafers W, and has a built-in transfer arm A1. The carrier C accommodates a plurality of circular wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier C and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier C.

The processing block 5 has a plurality of processing modules 11, 12, 13, 14. The processing modules 11, 12 and 13 have a built-in coating unit U1, a heat processing unit U2, and a transfer arm A3 that transports the wafer W to these units.

The processing module 11 forms an underlayer film on the surface of the wafer W by the coating unit U1 and the heat processing unit U2. The coating unit U1 of the processing module 11 applies a processing liquid for forming an underlayer film onto the wafer W. The heat treatment unit U2 of the treatment module 11 performs various heat treatments accompanying the formation of the lower layer film.

The processing module 12 forms a resist film on the lower layer film by the application unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 applies a processing liquid for forming a resist film onto the lower layer film. The heat processing unit U2 of the processing module 12 performs various heat treatments accompanying the formation of a resist film.

The processing module 13 forms an upper layer film on the resist film by the application unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 applies a liquid for forming an upper layer film onto the resist film. The heat treatment unit U2 of the treatment module 13 performs various heat treatments accompanying the formation of the upper layer film.

The processing module 14 incorporates a developing unit U3, a heat processing unit U4, and a transfer arm A3 that transports the wafer W to these units.

The processing module 14 performs development processing of the resist film after exposure by the developing unit U3 and the thermal processing unit U4. The developing unit U3 applies a developing solution onto the surface of the exposed wafer W and then rinses it with a rinse solution to develop a resist film. The heat treatment unit U4 performs various heat treatments accompanying the development treatment. Specific examples of the heat treatment include heat treatment before development treatment (PEB: Post Exposure Bake), heat treatment after development treatment (PB: Post Bake), and the like.

A shelf unit U10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the vertical direction. The lifting arm A7 is provided in the vicinity of the shelf unit U10. The lifting arm A7 raises and lowers the wafer W between cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the vertical direction.

The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 incorporates the transmission arm A8 and is connected to the exposure apparatus 3. The transfer arm A8 transfers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

The control unit 100 controls the coating/development device 2 so as to execute the coating/development process in the following order, for example. First, the control unit 100 controls the transfer arm A1 to transfer the wafer W in the carrier C to the shelf unit U10, and arranges the wafer W in the cell for the processing module 11. It controls the lifting arm A7.

Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11, and the wafer ( The coating unit U1 and the heat treatment unit U2 are controlled to form an underlayer film on the surface of W). After that, the control unit 100 controls the transfer arm A3 to return the wafer W with the lower layer film formed thereon to the shelf unit U10, and lifts and lowers the wafer W to place the wafer W in the cell for the processing module 12. Control arm (A7).

Subsequently, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12, and the wafer ( The coating unit U1 and the heat treatment unit U2 are controlled to form a resist film on the lower layer film of W). After that, the control unit 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and places the wafer W in the cell for the processing module 13 so that the lifting arm A7 ) To control.

Subsequently, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U10 to each unit in the processing module 13, and forms an upper layer film on the resist film of the wafer W. The coating unit U1 and the heat treatment unit U2 are controlled so as to be performed. After that, the control unit 100 controls the transfer arm A3 to transfer the wafer W to the shelf unit U11.

Subsequently, the control unit 100 controls the transfer arm A8 to send the wafer W of the shelf unit U11 to the exposure apparatus 3. Thereafter, the control unit 100 receives the wafer W subjected to the exposure treatment from the exposure apparatus 3 and sets the transfer arm A8 so as to be placed in the cell for the processing module 14 in the shelf unit U11. Control.

Subsequently, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U11 to each unit in the processing module 14, and develops the resist film of the wafer W. The developing unit U3 and the heat processing unit U4 are controlled to perform. After that, the control unit 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and the lifting arm A7 and the transfer arm to return the wafer W into the carrier C. Control (A1). In this way, the coating/development treatment is completed.

In addition, the specific configuration of the substrate processing device is not limited to the configuration of the coating/developing device 2 illustrated above. Any substrate processing apparatus may be provided as long as it includes the coating unit U1 and the control unit 100 capable of controlling the coating unit U1.

<Application unit>

Next, the configuration of the application unit U1 will be described in detail. As shown in Fig. 3, the application unit U1 includes a rotation holding unit 20, a coating liquid supply unit 30, a driving unit 40, a removal liquid supply unit 50, a driving unit 60, and a sensor ( 70).

The rotation holding part 20 holds and rotates the wafer W. For example, the rotation holding part 20 has a holding part 21 and a rotation driving part 22. The holding portion 21 supports the central portion of the wafer W arranged horizontally with the surface Wa facing upward, and holds the wafer W by, for example, vacuum adsorption. The rotation drive unit 22 is an actuator using, for example, an electric motor or the like as a power source, and rotates the holding unit 21 around a vertical rotation center CL1. Thereby, the wafer W is also rotated.

The coating liquid supply unit 30 supplies a coating liquid (for example, a processing liquid for forming a lower layer film, a resist film, or an upper layer film) to the surface Wa of the wafer W. The coating liquid supply unit 30 has a moving body 31 including a coating liquid nozzle 32 for discharging the coating liquid onto the wafer W, and a coating liquid source 33. The coating liquid nozzle 32 is open to the surface Wa side (downward) of the wafer W, and discharges the coating liquid downward. The coating liquid source 33 supplies the coating liquid to the coating liquid nozzle 32.

The driving unit 40 moves the moving body 31 including the coating liquid nozzle 32. For example, the drive unit 40 includes a power source 41 such as an electric motor, and a transmission mechanism 42 that transmits the power of the power source 41 to the moving body 31. The transmission mechanism 42 has, for example, a reducer 43 and a timing belt 44, and converts the rotation torque of the power source 41 into a translational force and transmits it to the moving body 31.

The removal liquid supply unit 50 uses a treatment liquid (hereinafter, referred to as a ``removal liquid'') for removing a film of a component of the coating liquid at the periphery of the surface Wa of the wafer W (a portion near the circumference Wc) To supply. The removal liquid supply part 50 has a moving body 51 including a removal liquid nozzle 52 for discharging the removal liquid to the periphery of the wafer W and a removal liquid source 53. The removal liquid nozzle 52 is opened to the surface Wa side (downward) of the wafer W, and discharges the removal liquid downward. The removal liquid source 53 supplies the removal liquid to the removal liquid nozzle 52. The removal liquid is, for example, an organic solvent that dissolves the film of the component of the coating liquid.

The driving unit 60 moves the moving body 51 including the removal liquid nozzle 52. For example, the drive unit 60 includes a power source 61 such as an electric motor, and a removal liquid nozzle 52 that transmits the power of the power source 61 to the moving body 51. The power source 61 may be a motor that can be controlled by an open loop method (a control method that does not accompany the feedback of the control amount), or may be a motor that can be controlled by a closed loop method (a control method that accompanies the feedback of the control amount). As a specific example of the motor that can be controlled by the open loop method, a stepping motor or the like can be given. As a specific example of the motor that can be controlled by the closed loop method, a servo motor or the like can be given.

The transmission mechanism 62 has, for example, a reduction gear 63 and a timing belt 64, and converts the rotation torque of the power source 61 into a translational force and transmits it to the moving body 51. In the case of having such a transmission mechanism 62, the position of the moving body 51 is caused by an error due to the characteristics of the transmission mechanism 62 (for example, the backlash of the reducer 63 and the elongation of the timing belt 64). There may be an error. Further, the error may change over time due to a change in characteristics of the transmission mechanism 62 (for example, a change in the elongation amount of the timing belt 64).

The sensor 70 detects information about the position of the moving object 51. The information about the position of the moving object 51 may be information directly indicating the position of the moving object 51 or may be information indirectly indicating the position of the moving object 51. Specific examples of the sensor 70 include a position sensor that detects the position of the moving object 51 using a linear scale such as an optical or magnetic type, and a non-contact distance sensor such as a laser displacement meter. Further, the sensor 70 may be a sensor that detects the arrival of the moving object 51 to the installation position, such as a photo interrupter, for example. In this case, the arrival time of the moving object 51 to the installation position can be detected as information about the position. Also by the arrival time, information about the position can be obtained based on a delay or progression to the target time (design time ignoring the above-described error).

The application unit U1 configured as described above is controlled by the control unit 100. The control unit 100 is a second position where the removal liquid nozzle 52 is arranged on the peripheral portion of the wafer W from a first position P1 where the removal liquid nozzle 52 is arranged outside the peripheral edge Wc of the wafer W. The control command for moving the moving object 51 to (P2) is output to the drive unit 60, and the sensor 70 is sent to the sensor 70 during the movement of the moving object 51 from the first position P1 to the second position P2. The control command is corrected so as to reduce the deviation between the moving object 51 and the second position P2 based on the relationship between the detected information and the control command.

The control unit 100 controls the movement of the moving body 51 from the first position P1 to the second position P2, and the supply position of the removal liquid from the removal liquid nozzle 52 is at the periphery Wc of the wafer W. Controlling the drive unit 60 to temporarily stop before reaching is further executed, and the sensor 70 is sent to the sensor 70 when the movement of the moving object 51 from the first position P1 to the second position P2 is temporarily stopped. It may be configured to correct the control command based on the information detected thereby. The control unit 100 controls the removal liquid supply unit 50 to discharge the removal liquid from the removal liquid nozzle 52 when the movement of the moving body 51 from the first position P1 to the second position P2 is temporarily stopped. It may be configured to do more. After the start of the period in which the movement of the moving object 51 from the first position P1 to the second position P2 temporarily stops, after the waiting time for damping the vibration of the moving object 51 has elapsed It may be configured to correct the control command based on the information detected by the sensor 70. After the start of a period in which the movement of the moving object 51 from the first position P1 to the second position P2 temporarily stops, the control unit 100 controls the sensor in a predetermined period longer than the vibration period of the moving object 51 ( 70) may be configured to derive a statistical value of the information detected, and correct the control command based on the statistical value.

For example, the control unit 100, as a functional configuration (hereinafter referred to as a'function module'), a rotation control unit 119, a coating liquid nozzle movement control unit 112, a coating liquid supply control unit 111, A removal liquid nozzle movement control part 114, a removal liquid supply control part 113, a control command holding part 116, a control command correction part 117, and a correction amount adjustment part 118 are provided.

The rotation control unit 119 controls the rotation holding unit 20 to hold and rotate the wafer W. The coating liquid nozzle movement control unit 112 includes a standby position where the coating liquid nozzle 32 is disposed outside the periphery Wc of the wafer W held by the rotation holding unit 20 and the surface of the wafer W ( The driving unit 40 is controlled so as to move the moving body 31 between the application target position where the coating liquid nozzle 32 is disposed on the center of Wa).

The coating liquid supply control unit 111 controls the coating liquid supply unit 30 to supply the coating liquid to the surface Wa of the wafer W held by the rotation control unit 119. For example, the coating liquid supply control unit 111 controls the coating liquid supply unit 30 to supply the coating liquid from the coating liquid source 33 to the coating liquid nozzle 32 with the moving body 31 at the application target position. do.

The removal liquid nozzle movement control unit 114 includes a standby position (first position) where the removal liquid nozzle 52 is disposed outside the peripheral edge Wc of the wafer W held by the rotation holding unit 20 and the wafer W The drive unit 60 is controlled so as to move the moving body 51 between the removal target position (second position) in which the removal liquid nozzle 52 is disposed on the periphery of the. For example, the removal liquid nozzle movement control unit 114 includes a control command for moving the moving body 51 from the standby position to the removal target position (hereinafter referred to as'outbound path control command'), and the removal target position A control command for moving the moving object 51 to the standby position (hereinafter, referred to as a “return control command”) is output to the driving unit 60. The removal liquid nozzle movement control unit 114 may be configured to control the driving unit 60 by the open loop method, or may be configured to control the driving unit 60 by the closed loop method.

The removal liquid nozzle movement control unit 114 temporarily stops the movement of the moving body 51 from the standby position to the removal target position before the removal liquid nozzle 52 reaches the periphery Wc of the wafer W. 60) may be configured to perform more control. When the removal liquid nozzle 52 reaches the peripheral edge Wc of the wafer W, the intersection of the center line of the opening of the removal liquid nozzle 52 and the plane along the surface Wa reaches the peripheral edge Wc. Means that. The temporary stop means that the movement according to the control command is stopped. That is, a state in which vibration due to inertia continues after movement according to the control command is stopped is also included in the temporarily stopped state.

The removal liquid supply control part 113 controls the removal liquid supply part 50 so that the removal liquid may be discharged from the removal liquid nozzle 52 to the peripheral part of the wafer W. For example, the removal liquid supply control unit 113 may supply the removal liquid from the removal liquid source 53 to the removal liquid nozzle 52 while at least the removal liquid nozzle 52 is on the periphery of the wafer W. Control. The removal liquid supply control unit 113 may control the removal liquid supply unit 50 to discharge the removal liquid from the removal liquid nozzle 52 even when the movement of the moving body 51 from the standby position to the removal target position is temporarily stopped. For example, the removal liquid supply control part 113 starts supply of the removal liquid from the removal liquid source 53 to the removal liquid nozzle 52 when the movement of the moving body 51 from a standby position to a removal target position is temporarily stopped, Thereafter, the removal liquid supply unit 50 may be controlled to continue supplying the removal liquid from the removal liquid source 53 to the removal liquid nozzle 52 until the discharge of the removal liquid to the peripheral portion of the wafer W is completed.

The control command holding unit 116 stores the outbound path control command and the return path control command. The control command correction unit 117 moves the moving body 51 based on the relationship between the information detected by the sensor 70 and the outbound route control command during the movement of the moving body 51 from the standby position to the removal target position. The outbound path control command is corrected to reduce the deviation between the completion position and the removal target position. For example, the control command correction unit 117 calculates the deviation of the position of the moving object 51 with respect to the outbound path control command, based on the relationship between the information detected by the sensor 70 and the outbound path control command, The outbound path control command is corrected to reduce the deviation. More specifically, when the position of the moving object 51 based on the information detected by the sensor 70 does not reach the target position at the time of detection of the information (a position to be reached in the design when the error is ignored), The control command correction unit 117 corrects the outbound path control command so as to increase the moving distance of the moving object 51 after the detection time point. On the other hand, when the position of the moving object 51 based on the information detected by the sensor 70 passes the target position at the time of detection of the information, the control command correction unit 117 is Correct the outbound path control command to shorten the moving distance of ).

In addition, when the sensor 70 is a sensor that detects the arrival of the moving object 51 to its installation position, the control command correction unit 117 corrects the control command as follows. That is, when the arrival time of the moving object 51 to the installation position of the sensor 70 is slower than the target time, the control command correction unit 117 controls the forward path to increase the moving distance of the moving object 51 after the detection time point. Correct the command. On the other hand, when the arrival time of the moving object 51 to the installation position of the sensor 70 is earlier than the target time, the control command correction unit 117 controls the forward path to shorten the moving distance of the moving object 51 after the detection time point. Correct the command.

The control command correction unit 117 is configured to correct the outbound route control command based on the information detected by the sensor 70 when the movement of the moving object 51 from the standby position to the removal target position is temporarily stopped. do. The control command correction unit 117, after the start of a period in which the movement of the moving object 51 from the standby position to the removal target position temporarily stops, the sensor 70 after a waiting time for attenuating the vibration of the moving object 51 has elapsed. ) May be configured to correct the control command based on the information detected by. The control command correction unit 117 sends the sensor 70 to the sensor 70 in a predetermined period longer than the vibration period of the moving object 51 after the start of the period in which the movement of the moving object 51 from the standby position to the removal target position temporarily stops. Thus, a statistical value (for example, an average value) of the detected information may be derived, and a control command may be corrected based on the statistical value.

The correction amount adjustment unit 118 is based on the deviation between the movement completion position of the moving body 51 and the removal target position according to the outbound route control command after correction by the control command correction unit 117, the control command correction unit 117 Adjust the correction amount of the control command by. The correction amount of the control command by the control command correction unit 117 means, for example, an amount that lengthens or shortens the moving distance of the moving object 51 after the detection time point.

More specifically, the correction amount adjustment unit 118 is based on the deviation between the movement completion position of the moving object 51 and the removal target position according to the outbound path control command after correction by the control command correction unit 117, the correction amount is insufficient. If it is determined that the correction amount is increased, the correction amount is increased. As a specific example of the case where the correction amount is judged to be insufficient, the movement completion position of the moving object 51 does not reach the removal target position even though the movement distance after the detection time point is increased, and the movement distance after the detection time point is determined. In spite of the shortening, the movement completion position of the moving object 51 may be past the removal target position. As a specific example of the case where the correction amount is judged to be excessive, when the movement completion position of the moving body 51 is past the removal target position as a result of increasing the movement distance after the detection time point, and shortening the movement distance after the detection time point. As a result, there is a case where the movement completion position of the moving object 51 does not reach the removal target position.

The control unit 100 is configured by one or a plurality of control computers. For example, the control unit 100 has the circuit 120 shown in FIG. 4. The circuit 120 includes one or more processors 121, a memory 122, a storage 123, an input/output port 124, and a timer 125. The storage 123 has a storage medium readable by a computer, such as a hard disk, for example. The storage medium stores a program for causing the coating unit U1 to execute the substrate processing procedure described later. The storage medium may be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily stores a program loaded from a storage medium of the storage 123 and an operation result by the processor 121. The processor 121 cooperates with the memory 122 to execute the program, thereby configuring each of the above-described functional modules. The input/output port 124 is a rotation holding unit 20, a coating solution supply unit 30, a driving unit 40, a removal solution supply unit 50, a driving unit 60, and a sensor 70 according to a command from the processor 121. An electric signal is input/output between and. The timer 125 measures the elapsed time, for example, by counting a reference pulse of a fixed period. In addition, the hardware configuration of the control unit 100 is not necessarily limited to configuring each functional module by a program. For example, each functional module of the control unit 100 may be constituted by a dedicated logic circuit or an application specific integrated circuit (ASIC) incorporating the same.

[Film Formation Procedure]

Hereinafter, as an example of the substrate processing method, a film forming process performed in the coating unit U1 will be described. As shown in Fig. 5, the control unit 100 first sequentially executes steps S01 and S02. In step S01, while the holding unit 21 holds the wafer W, the rotation control unit 119 starts the rotation of the wafer W by the rotation driving unit 22. ) To control. Step S02 is a step of controlling the coating liquid supply unit 30 and the driving unit 40 to apply the coating liquid to the surface Wa of the wafer W. Detailed contents will be described later.

Subsequently, the control unit 100 sequentially executes steps S03 and S04. Steps S03 and S04 are steps of controlling the rotation holding unit 20 to form a film by drying the liquid film of the coating liquid formed by step S02. In step S03, the rotation control unit 119 controls the rotation holding unit 20 to change the rotation speed of the wafer W to a predetermined rotation speed for drying. In step S04, the rotation control unit 119 waits for the lapse of a predetermined drying period.

Subsequently, the control unit 100 sequentially executes steps S05 and S06. Steps S05 and S06 are a step of controlling the removal liquid supply unit 50 and the drive unit 60 to remove the periphery of the film formed by the steps S02, S03, and S04. In step S05, the rotation control unit 119 controls the rotation holding unit 20 to change the rotation speed of the wafer W to a rotation speed for removing the peripheral edge set in advance. Step S06 is a step of controlling the removal liquid supply unit 50 and the drive unit 60 so as to supply the removal liquid to the periphery of the wafer W. Detailed contents will be described later.

Subsequently, the control unit 100 sequentially executes steps S07, S08, and S09. In step S07, the rotation control unit 119 controls the rotation holding unit 20 to change the rotation speed of the wafer W to a preset rotation speed for drying. In step S08, the rotation control unit 119 waits for the lapse of a predetermined drying period. In step S09, the rotation control unit 119 controls the rotation holding unit 20 to stop the rotation of the wafer W by the rotation drive unit 22. This completes the film formation procedure.

<Application procedure>

Next, a specific procedure of the above-described step (S02) is illustrated. As shown in Fig. 6, the control unit 100 sequentially executes steps S11, S12, S13, S14, and S15. In step S11, the coating liquid nozzle movement control unit 112 controls the driving unit 40 to move the moving body 31 from the standby position to the application target position. Thereby, the coating liquid nozzle 32 moves onto the center of the wafer W (see Fig. 7A). In step S12, the coating liquid supply control unit 111 controls the coating liquid supply unit 30 to start supply of the coating liquid L1 from the coating liquid source 33 to the coating liquid nozzle 32 (Fig. 7). (B) of). In step S13, the coating liquid supply control unit 111 waits for the lapse of a preset coating period. In step S14, the coating liquid supply control unit 111 controls the coating liquid supply unit 30 to stop supply of the coating liquid from the coating liquid source 33 to the coating liquid nozzle 32. In step S15, the coating liquid nozzle movement control unit 112 controls the driving unit 40 to move the moving body 31 from the application target position to the standby position (see Fig. 7(c)). Thereby, the coating liquid nozzle 32 moves out of the peripheral edge Wc of the wafer W. In this way, the application process procedure is completed. A liquid film of the coating liquid L1 is formed on the surface Wa of the wafer W by the execution of the coating process procedure.

<Procedure of removing lead>

Next, a specific procedure of the above-described step S06 is illustrated. This sequence includes controlling the driving unit 60 to move the moving object 51 from the standby position to the removal target position, and the moving object 51 detected during the movement of the moving object 51 from the standby position to the removal target position. ), based on the relationship between the position information and the control command for the driving unit 60, correct the control command for the driving unit 60 to reduce the deviation between the movement completion position of the moving body 51 and the removal target position. Includes doing.

As shown in Fig. 8, the control unit 100 first executes step S21. In step S21, the removal liquid nozzle movement control unit 114 transmits a control command (hereinafter referred to as a ``forward first control command'') to move the moving body 51 from the standby position to the temporary stop target position to the drive unit 60. Print. The drive unit 60 temporarily stops after moving the moving body 51 in accordance with the first outbound control command (see Fig. 10A). The temporary stop target position is set so that the removal liquid nozzle 52 does not reach on the periphery Wc of the wafer W.

Subsequently, the control unit 100 executes steps S22, S23, and S24. In step S22, the control command correction unit 117 waits for the lapse of a preset waiting time in order to attenuate the vibration of the moving body 51. In step S23, the control command correction unit 117 acquires the information detected by the sensor 70. In step S24, the control command correction unit 117 determines the deviation between the movement completion position of the moving object 51 and the removal target position based on the relationship between the information acquired in step S23 and the outbound route control command. Correct the outbound path control command so that it can be reduced. For example, the control command correction unit 117 is based on the relationship between the position of the moving object 51 (hereinafter referred to as'current position') based on the information acquired in step S23 and the temporary stop target position. Thus, the deviation of the position of the moving object 51 with respect to the outbound path control command is calculated, and a control command from the temporary stop target position to the removal target position (hereinafter referred to as ``outbound second control command'') is given to reduce the deviation. Correct. More specifically, when the current position of the moving object 51 has not reached the temporary stop target position, the control command correction unit 117 controls the second forward path so as to lengthen the moving distance of the moving object 51 after resuming movement. Correct the command. On the other hand, when the current position of the moving object 51 passes the temporary stop target position, the control command correction unit 117 corrects the forward second control command so as to shorten the moving distance of the moving object 51 after resuming movement. .

Subsequently, the control unit 100 executes steps S25, S26, and S27. In step S25, the removal liquid supply control unit 113 controls the removal liquid supply unit 50 to start supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52 (see FIG. 10B). ). In step S26, the removal liquid nozzle movement control unit 114 waits for the lapse of a preset dummy discharge time. In step S27, the outbound second control command corrected in step S24 is output to the driving unit 60. The drive unit 60 resumes the movement of the moving object 51 in accordance with the second outbound control command, and temporarily stops after moving the moving object 51 to or near the removal target position. Thereby, the removal liquid L2 is supplied to the peripheral part of the wafer W (refer FIG. 10(c)).

As shown in Fig. 9, the control unit 100 then sequentially executes steps S31, S32, and S33. In step S31, the correction amount adjusting unit 118 waits for the lapse of a preset waiting time in order to attenuate the vibration of the moving body 51. In step S32, the correction amount adjusting unit 118 acquires the information detected by the sensor 70. In step S33, the correction amount adjusting unit 118 is based on the deviation between the position of the moving object 51 (hereinafter referred to as'current position') based on the information acquired in step S32 and the target position to be removed. Thus, the correction amount of the control command in the next step S24 is adjusted. More specifically, when it is determined that the correction amount in step S24 is insufficient, based on the deviation between the current position of the moving object 51 and the target position to be removed, the correction amount adjusting unit 118 is a step after the next round. The correction amount in (S24) is increased, and when it is judged that the correction amount in step S24 is excessive, the correction amount in step S24 after the next time is reduced. For example, if the current position of the moving object 51 does not reach the removal target position even though the moving distance after the movement resumes in step S24 is increased, or the correction amount adjusting unit 118 moves in step S24 In the case where the current position of the moving object 51 is past the removal target position even though the moving distance after resuming is shortened, the correction amount in the step S24 after the next turn is increased. On the other hand, the correction amount adjustment unit 118, when the movement completion position of the moving object 51 is past the removal target position as a result of increasing the movement distance after the movement is resumed in step S24, or after the movement is resumed in step S24. When the movement completion position of the moving object 51 has not reached the removal target position as a result of shortening the movement distance, the correction amount in the step S24 after the next turn is reduced.

Subsequently, the control unit 100 executes steps S34, S35, and S36. In step S34, a control command for moving the moving body 51 from the removal target position to the temporary stop target position (hereinafter, referred to as a'return first control command') by the removal liquid nozzle movement control unit 114 is the drive unit 60 Output to The drive unit 60 temporarily stops after moving the moving object 51 back home according to the first control command (see Fig. 11(a)). In step S35, the removal liquid supply control part 113 controls the removal liquid supply part 50 to stop supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52. In step S36, the removal liquid nozzle movement control unit 114 sends a control command (hereinafter referred to as a ``return second control command'') to move the moving body 51 from the temporary stop target position to the standby position to the drive unit 60. Print. The drive unit 60 stops after moving the movable body 51 according to the second control command back home (see Fig. 11B). This completes the process of removing the leading edge. By the execution of the peripheral edge removal treatment procedure, the peripheral edge portion of the film F1 (film formed by the above steps S03 and S04) on the surface Wa is removed.

[Effect of this embodiment]

As described above, the coating/development device 2 includes a removal liquid supply unit 50 having a removal liquid nozzle 52 for discharging a removal liquid to the periphery of the wafer W, and a moving body including the removal liquid nozzle 52. The driving unit 60 for moving 51, the sensor 70 for detecting information on the position of the moving body 51, and a first position where the removal liquid nozzle 52 is disposed outside the peripheral edge Wc of the wafer W Outputting a control command for moving the moving body 51 to the driving unit 60 from P1 to the second position P2 where the removal liquid nozzle 52 is disposed on the periphery of the wafer W, and the first position. Based on the relationship between the information detected by the sensor 70 and the control command during the movement of the moving object 51 from (P1) to the second position P2, the movement completed position of the moving object 51 and the second position ( And a control unit 100 configured to perform correction of the control command so as to reduce the deviation from P2).

According to this coating/development device 2, information about the position of the moving object 51 is detected during the movement of the moving object 51, and a control command is corrected based on the information, so that the movement completion position of the moving object 51 and the It is possible to reduce the deviation from the second position P2. In addition, according to the method based on the relationship between the information on the position of the moving object 51 and the control command, the sensor 70 is attached to the moving object 51 itself as in the method of detecting the peripheral edge Wc of the wafer W. Since there is no need to dispose, it is possible to avoid an enlargement of the moving body 51 due to the disposition of the sensors 70. In addition, based on the relationship between the information on the position of the moving object 51 and the control command, it is possible to correct the control command with margin at an arbitrary timing without detecting the peripheral edge Wc of the wafer W. . Therefore, this coating/development device 2 is effective in improving the accuracy of the supply position of the removal liquid to the peripheral portion of the wafer W.

12 is a graph illustrating the relationship between the number of operations and the amount of shift from the target position. The "difference amount from the target position" is a deviation between the movement completion position of the moving body 51 and the removal target position according to the outbound route control command. The broken line in the graph indicates the amount of shift in the target position when the control command correction unit 117 does not correct the control command. The solid line in the graph indicates the amount of deviation of the target position in the case of correcting the control command by the control command correcting unit 117.

The amount of deviation indicated by the broken line deviates greatly from the range of the upper limit value (UL) and the lower limit value (LL) at the stage where the number of operations is small, and the range of the upper limit value (UL) and lower limit value (LL) gradually as the number of operations increases. I am going through the procedures within. It is assumed that this is because the elongation amount of the timing belt 64 is gradually stabilized. However, even after convergence within the ranges of the upper limit value UL and the lower limit value LL, the deviation amount indicated by the broken line often reaches a value close to the lower limit value LL. It is assumed that this is because, even after the elongation amount of the timing belt 64 is stabilized, an influence such as backlash of the reduction gear 63 still remains. On the other hand, the amount of deviation indicated by the solid line has a sufficient margin even at a stage in which the number of operations is small and falls within the range of the upper limit value UL and the lower limit value LL, and the tendency is the same even if the number of operations increases. In this way, the correction of the control command by the control command correction unit 117 is effective for improving the accuracy of the supply position of the processing liquid to the peripheral portion of the substrate.

The control unit 100 temporarily stops the movement of the moving body 51 from the first position P1 to the second position P2 before the removal liquid nozzle 52 reaches the periphery Wc of the wafer W. Based on the information detected by the sensor 70 when the movement of the moving object 51 from the first position P1 to the second position P2 is temporarily stopped by further executing the control of the driving unit 60 Thus, it may be configured to correct the control command. In this case, the control command can be corrected with a margin at the timing before the removal liquid nozzle 52 reaches on the peripheral portion of the wafer W.

The control unit 100 controls the removal liquid supply unit 50 to discharge the removal liquid from the removal liquid nozzle 52 when the movement of the moving body 51 from the first position P1 to the second position P2 is temporarily stopped. It may be configured to do more. In this case, it is possible to start discharging of the removal liquid using the timing of the temporary stop, so that particles contained in the removal liquid at the time of starting the discharge can be suppressed from adhering to the wafer W.

After the start of the period in which the movement of the moving object 51 from the first position P1 to the second position P2 temporarily stops, after the waiting time for damping the vibration of the moving object 51 has elapsed It may be configured to correct the control command based on the information detected by the sensor 70. In this case, it is possible to suppress a decrease in the accuracy of the supply position of the removal liquid due to non-uniformity of information detected by the sensor 70.

The control unit 100 may be configured to further adjust the correction amount of the control command based on the deviation between the movement completed position of the moving object 51 and the second position P2 according to the corrected control command. In this case, it is possible to further reduce the deviation between the moving object 51 and the second position P2.

[Modified example]

After the start of a period in which the movement of the moving object 51 from the first position P1 to the second position P2 temporarily stops, the control unit 100 controls the sensor in a predetermined period longer than the vibration period of the moving object 51 ( 70) may be configured to derive a statistical value of the information detected, and correct the control command based on the statistical value. In this case, it is possible to suppress a decrease in the accuracy of the supply position of the removal liquid due to non-uniformity in the positional information. Hereinafter, the procedure of the main edge removal process by the control unit 100 configured as described above is illustrated in detail. As shown in Fig. 13, the control unit 100 first executes step S41. In step S41, the removal liquid nozzle movement control unit 114 outputs the forward first control command to the drive unit 60, similarly to step S21.

Subsequently, the control unit 100 executes steps S42 and S43. In step S42, the control command correction unit 117 acquires the information detected by the sensor 70. In step S43, it is checked whether the preset data collection period has elapsed so that the control command correction unit 117 is longer than the vibration period of the moving object 51. When it is determined in step S43 that the data collection period has not elapsed, the control unit 100 returns the process to step S42. Thereafter, until the elapse of the data collection period, acquisition of information detected by the sensor 70 is repeated.

When it is determined in step S43 that the data collection period has elapsed, the control unit 100 executes step S44. In step S44, the control command correction unit 117 derives a statistical value (for example, an average value) of the information detected by the sensor 70 in step S42.

Subsequently, the control unit 100 executes step S45. In step S45, based on the relationship between the statistical value derived in step S44 and the outgoing first control command, the control command correction unit 117 determines the movement completion position of the moving object 51 and the removal target position. The outbound path control command is corrected to reduce the deviation. The specific processing content of step S45 is the same as that of step S24, except that the statistical value is used as information detected by the sensor 70.

Subsequently, the control unit 100 sequentially executes steps S46, S47, and S48, which are the same as steps S25, S26, and S27. In step S46, the removal liquid supply control part 113 controls the removal liquid supply part 50 to start supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52. In step S47, the removal liquid nozzle movement control unit 114 waits for the lapse of a preset dummy discharge time. In step S48, the outbound second control command corrected in step S45 is output to the driving unit 60.

As shown in Fig. 14, the control unit 100 then executes steps S51 and S52. In step S51, the control command correction unit 117 acquires the information detected by the sensor 70. In step S52, it is checked whether or not a preset data collection period has elapsed so that the control command correction unit 117 is longer than the vibration period of the moving object 51. When it is determined in step S52 that the data collection period has not elapsed, the control unit 100 returns the process to step S52. Thereafter, until the elapse of the data collection period, acquisition of information detected by the sensor 70 is repeated.

When it is determined in step S52 that the data collection period has elapsed, the control unit 100 executes step S53. In step S53, the control command correcting unit 117 derives a statistical value (for example, an average value) of the information detected by the sensor 70 in step S52.

Subsequently, the control unit 100 executes step S54. In step S54, the correction amount adjusting unit 118 is based on the deviation between the position of the moving object 51 (hereinafter referred to as'current position') based on the statistical value derived in step S53 and the target position to be removed. Thus, the correction amount of the control command in the next step S45 is adjusted. The specific processing content of step S54 is the same as that of step S33, except that the statistical value is used as the information detected by the sensor 70.

Subsequently, the control unit 100 sequentially performs the same steps S55, S56, and S57 as the steps S34, S35, S36. In step S55, the removal liquid nozzle movement control unit 114 outputs the return first control command to the driving unit 60. In step S56, the removal liquid supply control unit 113 controls the removal liquid supply unit 50 to stop supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52. In step S57, the removal liquid nozzle movement control unit 114 outputs the return second control command to the driving unit 60. This completes the process of removing the leading edge.

The control unit may be configured so as not to temporarily stop the movement of the moving body 51 between the standby position and the removal target position. Hereinafter, the procedure of the main edge removal process by the control unit 100 configured as described above is illustrated in detail.

As shown in Fig. 15, the control unit 100 first executes steps S61 and S62 sequentially. In step S61, the removal liquid nozzle movement control part 114 controls the drive part 60 to start movement of the moving object 51 from a standby position to a removal target position in accordance with a forward path control command. In step S62, the removal liquid supply control part 113 waits for the progress of the control of the drive part 60 for moving the moving object 51 to reach a preset discharge start step. The discharge start step is a step in which, for example, the output of a control command for moving the moving object 51 to a preset discharge start position (hereinafter, referred to as a “forward first control command”) is completed.

Subsequently, the control unit 100 sequentially performs the same steps S63, S64, and S65 as the steps S23, S24, S25. In step S63, the control command correction unit 117 acquires the information detected by the sensor 70. In step S64, based on the relationship between the information acquired in step S63 and the outgoing first control command, the control command correction unit 117 determines the movement completion position of the moving object 51 and the removal target position. The outbound path control command is corrected to reduce the deviation. In step S65, the removal liquid supply control part 113 controls the removal liquid supply part 50 to start supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52.

Subsequently, the control unit 100 sequentially executes steps S66 and S67. In step S66, the removal liquid nozzle movement control unit 114 waits for the progress of the control of the driving unit 60 for moving the moving body 51 to reach a preset movement stop step. The movement stop step is a step in which the output of the outbound path control command corrected in step S64 is completed. In step S67, the removal liquid supply control unit 113 controls the drive unit 60 to stop the movement of the moving body 51.

As shown in Fig. 16, the control unit 100 then sequentially performs steps S71 and S72 identical to steps S32 and S33. In step S71, the correction amount adjusting unit 118 acquires the information detected by the sensor 70. In step S72, the correction amount adjustment unit 118, on the basis of the deviation between the position of the moving object 51 and the removal target position based on the information acquired in step S71, to the next step (S64). Adjusts the amount of correction of the control command.

Subsequently, the control unit 100 sequentially executes steps S73, S74, S75, S76, and S77. In step S73, the removal liquid nozzle movement control part 114 controls the drive part 60 so that the movement of the moving object 51 from the removal target position to the standby position may be started in accordance with the return control command. In step S74, the removal liquid supply control unit 113 waits for the progress of the control of the drive unit 60 for moving the moving body 51 to reach a preset discharge stop step. The discharge stop step is a step in which, for example, the output of a control command for moving the moving object 51 to a preset discharge stop position (hereinafter referred to as a “return first control command”) is completed. In step S75, the removal liquid supply control part 113 controls the removal liquid supply part 50 to stop supply of the removal liquid L2 from the removal liquid source 53 to the removal liquid nozzle 52. In step S76, the removal liquid nozzle movement control unit 114 waits for the progress of the control of the driving unit 60 for moving the moving body 51 to reach a preset movement stop step. The movement stop step is a step in which the output of the return control command is completed. In step S77, the removal liquid nozzle movement control unit 114 controls the driving unit 60 to stop the movement of the moving body 51. This completes the process of removing the leading edge.

As mentioned above, although the embodiment has been described, the present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. The process of supplying the processing liquid to the peripheral edge of the substrate is not limited to the process of supplying the removal liquid to the peripheral edge of the substrate. The treatment of supplying the processing liquid to the periphery of the substrate may be a treatment of supplying the coating liquid to the periphery of the substrate to form a film on the periphery of the substrate. The substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, a flat panel display (FPD), or the like.

2: Coating and developing device (substrate processing device)
50: removal liquid supply unit (liquid supply unit)
51: moving object
52: removal liquid nozzle (nozzle)
60: drive unit
70: sensor
100: control unit
P1: 1st position
P2: 2nd position
W: Wafer (substrate)
Wc: starring

Claims (8)

A liquid supply unit having a nozzle for discharging the processing liquid to the peripheral edge of the substrate,
A driving unit for moving a moving body including the nozzle,
A sensor that detects information on the position of the moving object;
Outputting a control command to a driving unit for moving the moving object from a first position where the nozzle is disposed outside the circumference of the substrate to a second position where the nozzle is disposed on the circumference of the substrate, and the first position Based on the relationship between the information detected by the sensor and the control command during the movement of the moving object to the second position, the control command is given to reduce a deviation between the movement complete position of the moving object and the second position. A substrate processing apparatus comprising a control unit configured to perform correction. The method of claim 1,
The control unit further controls the driving unit to temporarily stop the movement of the moving object from the first position to the second position before the nozzle reaches the periphery of the substrate, and the first position And correcting the control command on the basis of the information detected by the sensor when the movement of the moving object from the to the second position is temporarily stopped. The method of claim 2,
The control unit is configured to further control the liquid supply unit to discharge the processing liquid from the nozzle when the movement of the moving object from the first position to the second position is temporarily stopped. Device. The method according to claim 2 or 3,
The control unit, after the start of a period in which the movement of the moving object from the first position to the second position is temporarily stopped, the information detected by the sensor after a waiting time for attenuating the vibration of the moving object has elapsed. The substrate processing apparatus, which is configured to correct the control command on the basis of. The method according to any one of claims 2 to 4,
The control unit includes a statistical value of the information detected by the sensor in a predetermined period longer than a vibration period of the moving object after the start of a period in which the movement of the moving object from the first position to the second position is temporarily stopped. And is configured to derive and correct the control command based on the statistical value. The method according to any one of claims 1 to 5,
The control unit is configured to further perform adjustment of the correction amount of the control command based on a deviation between the movement completion position of the moving object and the second position according to the control command after correction. A driving unit to move the moving body including the nozzle from a first position in which a nozzle for discharging a processing liquid is disposed outside the circumference of the substrate to a second position in which the nozzle is disposed on the circumference of the substrate To control
Based on the relationship between the position of the moving object detected during the movement of the moving object from the first position to the second position and a control command for the driving unit, the moving complete position of the moving object and the second position And correcting a control command for the driving unit so as to reduce a deviation of and. A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to claim 7.

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