JP6405290B2 - Substrate processing apparatus, substrate processing method, and computer-readable recording medium - Google Patents

Description

  The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium.

  Currently, in performing fine processing of a substrate (for example, a semiconductor wafer), it is widely performed to form a concavo-convex pattern on the substrate using a photolithography technique. For example, in the step of forming a resist pattern on the substrate, a resist film is formed on the surface of the substrate, the resist film is exposed along a predetermined pattern, and the exposed resist film and developer are Reacting and developing.

  The uniformity of the line width (also referred to as CD (Critical dimension) of the resist pattern formed on the surface of the substrate. In the following, the line width of the resist pattern may be simply referred to as “line width”). When a semiconductor device is obtained by processing, it can be a factor that causes variations in the semiconductor device. For this reason, various methods for obtaining a uniform line width have been developed. For example, Patent Documents 1 and 2 describe a step of measuring a line width of a resist pattern formed on a first substrate, a step of changing processing conditions based on the size of the line width, and a changed processing. And a step of forming a resist pattern on a subsequent second substrate depending on conditions.

JP 2009-267144 A JP 2010-212414 A

  Patent Documents 1 and 2 perform so-called feedback control that corrects the line width of the subsequent second substrate based on the line width of the first substrate. According to the feedback control, no correction is performed on the line width on the first substrate in the previous stage. Therefore, when the line width on the first wafer is not a desired size, the line width on the first substrate is not corrected. Requires processing.

  Thus, the present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium that can achieve both uniform line width formation and productivity improvement.

  As a result of intensive research by the present inventors, when the resist film on the substrate is subjected to pattern exposure, the structure of the polymer constituting the resist film changes, and the thickness of the resist film in the exposed portion slightly changes. There was found. Furthermore, it has been found that there is a correlation between the film thickness of the resist film and the line width of the resist pattern to be finally formed.

  Based on these facts, a substrate processing apparatus according to one aspect of the present disclosure includes a measurement unit that is disposed on the surface of a substrate and configured to measure the thickness of a resist film after pattern exposure, and a resist film A correction unit configured to perform correction processing, a developing unit configured to develop the resist film, and a control unit, the control unit based on the film thickness measured by the measurement unit And a second process for controlling the correction unit so that the correction process is performed on the resist film based on the correction condition set in the first process. And a third process for controlling the developing unit so as to develop the resist film after the second process is performed.

  In the substrate processing apparatus according to one aspect of the present disclosure, the control unit performs a first process of setting a resist film correction condition by the correction unit based on the film thickness measured by the measurement unit. For example, when the line width estimated based on the film thickness measured by the measurement unit (estimated line width) is not uniform in the substrate surface, the resist film is actually formed at a location where the estimated line width is large. The correction conditions are set so that the line width becomes smaller. In the substrate processing apparatus according to one aspect of the present disclosure, the control unit controls the correction unit so that the correction process is performed on the resist film based on the correction condition set in the first process. The second process and the third process for controlling the developing unit so as to develop the resist film after the second process is performed. As described above, in the substrate processing apparatus according to one aspect of the present disclosure, the correction for the estimated line width variation and the development processing are performed on the same substrate as the target of the resist film thickness measurement by the measurement unit. Is called. That is, necessary correction is performed by so-called feedforward control, and a desired resist pattern line width is obtained. Therefore, since information obtained during processing of another substrate is not used when forming a resist pattern, the substrate can be processed quickly and generation of a substrate to be reprocessed can be suppressed. Therefore, according to the substrate processing apparatus concerning one viewpoint of this indication, it becomes possible to make formation of a uniform line width and improvement of productivity compatible.

  The substrate processing apparatus which concerns on one viewpoint of this indication is further equipped with the heating part comprised so that the resist film after pattern exposure might be heat-processed, and the measurement part is a film | membrane of the resist film after being heated by the heating part It may be configured to measure thickness. In this case, by subjecting the resist film after pattern exposure to heat treatment by the heating unit, the structure of the polymer in the pattern-exposed part of the resist film is more likely to change. Therefore, after the heat treatment of the resist film by the heating unit, the film thickness of the resist film in the exposed portion changes greatly. Therefore, the estimated line width can be obtained with higher accuracy.

  The measurement unit is configured to measure the first film thickness of the resist film after being heated by the heating unit and the second film thickness of the resist film before pattern exposure, and the control unit is configured to measure the first film thickness. In this processing, the resist film correction condition by the correction unit may be set based on the difference between the first film thickness and the second film thickness. In this case, even if there is a variation in the thickness of the resist film arranged on the substrate, the influence of the variation is greatly reduced by subtracting the second thickness from the first thickness. I'll be caught. Therefore, since the change in the film thickness of the resist film due to pattern exposure can be grasped more accurately, the estimated line width can be obtained with higher accuracy.

  The correction unit may perform heating or exposure on the resist film as the correction process.

  In the first process, the control unit estimates the line width of the resist pattern obtained by developing the resist film based on the film thickness measured by the measurement unit, and based on the estimated line width. The heating temperature or exposure amount for the resist film may be set as the correction condition.

  A substrate processing apparatus according to another aspect of the present disclosure is configured to develop a resist film, and a measurement unit that is disposed on the surface of the substrate and configured to measure the film thickness of the resist film after pattern exposure. A developing unit and a control unit, and the control unit sets in the first process the first process for setting the developing condition of the resist film by the developing unit based on the film thickness measured by the measuring unit And a second process for controlling the developing unit so as to develop the resist film based on the developed conditions.

  In the substrate processing apparatus according to another aspect of the present disclosure, the control unit performs a first process of setting a developing condition of the resist film by the developing unit based on the film thickness measured by the measuring unit. For example, when the line width estimated based on the film thickness measured by the measurement unit (estimated line width) is not uniform in the substrate surface, but is larger than a predetermined size, Development conditions for setting a long development time are set. In the substrate processing apparatus according to another aspect of the present disclosure, the control unit executes the second process of controlling the developing unit so as to develop the resist film based on the development conditions set in the first process. To do. As described above, in the substrate processing apparatus according to another aspect of the present disclosure, for the same substrate as the target of the film thickness measurement of the resist film by the measurement unit, the development condition is changed with respect to the estimated line width and the development is performed. Processing. That is, development conditions are changed by so-called feedforward control, and a desired resist pattern line width is obtained. Therefore, since information obtained during processing of another substrate is not used when forming a resist pattern, the substrate can be processed quickly and generation of a substrate to be reprocessed can be suppressed. Therefore, according to the substrate processing apparatus according to another aspect of the present disclosure, it is possible to achieve both the formation of a uniform line width and the improvement of productivity.

  The measurement unit may be configured to measure only the thickness of the resist film in the multilayer film that is disposed on the surface of the substrate and includes the resist film.

  The measurement unit may be configured to measure the film thickness of the entire multilayer film disposed on the surface of the substrate and including the resist film. The film thickness is changed by pattern exposure and heating in the resist film, and the film thicknesses of other films (for example, the lower layer film and the intermediate film) are not substantially changed by pattern exposure and heating. Therefore, even when the thickness of the multilayer film is measured, the thickness of the resist film can be substantially measured.

  A substrate processing method according to another aspect of the present disclosure includes a step of obtaining a first film thickness by measuring a film thickness of a resist film disposed on a surface of a substrate and after pattern exposure, and a measured resist film A step of setting a correction condition based on the film thickness, a step of performing a correction process on the resist film based on the set correction condition, and a step of developing the resist film after the correction process is performed. Including.

  In the substrate processing method according to another aspect of the present disclosure, the correction condition is set based on the measured film thickness of the resist film. For example, when the line width estimated based on the measured film thickness (estimated line width) is non-uniform in the substrate surface, the line width actually formed in the resist film where the estimated line width is large The correction condition is set so that becomes smaller. In the substrate processing method according to another aspect of the present disclosure, a step of performing a correction process on the resist film based on a set correction condition, and a step of developing the resist film after the correction process is performed including. As described above, in the substrate processing method according to another aspect of the present disclosure, correction for variation in estimated line width and development processing are performed on the same substrate as the target of film thickness measurement of the resist film. That is, necessary correction is performed by so-called feedforward control, and a desired resist pattern line width is obtained. Therefore, since information obtained during processing of another substrate is not used when forming a resist pattern, the substrate can be processed quickly and generation of a substrate to be reprocessed can be suppressed. Therefore, according to the substrate processing method according to another aspect of the present disclosure, it is possible to achieve both uniform line width formation and productivity improvement.

  The substrate processing method according to another aspect of the present disclosure further includes a step of heat-treating the resist film after pattern exposure, and in the step of obtaining the first film thickness, the resist film is provided after the step of heat-treating the resist film. The film thickness may be measured. In this case, by subjecting the resist film after pattern exposure to a heat treatment, the polymer structure of the pattern-exposed portion of the resist film is more likely to change. Therefore, after the heat treatment of the resist film, the film thickness of the resist film in the exposed portion changes greatly. Therefore, the estimated line width can be obtained with higher accuracy.

  The substrate processing method according to another aspect of the present disclosure further includes a step of acquiring a second film thickness by measuring a film thickness of the resist film before pattern exposure. In the step of setting the correction condition, The correction conditions for the resist film may be set based on the difference between the film thickness and the second film thickness. In this case, even if there is a variation in the thickness of the resist film arranged on the substrate, the influence of the variation is greatly reduced by subtracting the second thickness from the first thickness. I'll be caught. Therefore, since the change in the film thickness of the resist film due to pattern exposure can be grasped more accurately, the estimated line width can be obtained with higher accuracy.

  In the process of performing the correction process on the resist film, the resist film may be heated or exposed as the correction process.

  In the step of setting the correction conditions, the line width of the resist pattern obtained by developing the resist film is estimated based on the measured first film thickness, and the resist width is calculated based on the estimated line width. The heating temperature or exposure amount for the film may be set as the correction condition.

  A substrate processing method according to another aspect of the present disclosure includes a step of measuring a film thickness of a resist film disposed on a surface of a substrate and after pattern exposure, and a resist film based on the measured film thickness of the resist film. The method includes a step of setting development conditions and a step of developing the resist film based on the set development conditions.

  In the substrate processing method according to another aspect of the present disclosure, the developing conditions for the resist film are set based on the measured film thickness of the resist film. For example, when the line width estimated based on the measured film thickness (estimated line width) is not uniform within the substrate surface, but is larger than a predetermined size, the development time is reduced. Development conditions for a long time are set. In the substrate processing method according to another aspect of the present disclosure, the resist film is developed based on the set development conditions. As described above, in the substrate processing method according to another aspect of the present disclosure, for the same substrate as the target of film thickness measurement of the resist film, the development condition change with respect to the estimated line width and the development processing are performed. Done. That is, development conditions are changed by so-called feedforward control, and a desired resist pattern line width is obtained. Therefore, since information obtained during processing of another substrate is not used when forming a resist pattern, the substrate can be processed quickly and generation of a substrate to be reprocessed can be suppressed. Therefore, according to the substrate processing method according to another aspect of the present disclosure, it is possible to achieve both the formation of a uniform line width and the improvement of productivity.

  In the step of measuring the film thickness of the resist film, only the film thickness of the resist film may be measured among the multilayer films disposed on the surface of the substrate and including the resist film.

  In the step of measuring the thickness of the resist film, the thickness of the entire multilayer film disposed on the surface of the substrate and including the resist film may be measured. The film thickness is changed by pattern exposure and heating in the resist film, and the film thicknesses of other films (for example, the lower layer film and the intermediate film) are not substantially changed by pattern exposure and heating. Therefore, even when the thickness of the multilayer film is measured, the thickness of the resist film can be substantially measured.

  A computer-readable recording medium according to another aspect of the present disclosure records a program for causing a substrate processing apparatus to execute the above substrate processing method. In the computer-readable recording medium according to another aspect of the present disclosure, it is possible to achieve both the formation of a uniform line width and the improvement of productivity, as in the above-described substrate processing method. In this specification, a computer-readable recording medium includes a non-transitory computer recording medium (non-transitory computer recording medium) (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). (For example, a data signal that can be provided via a network).

  According to the substrate processing apparatus, the substrate processing method, and the computer-readable recording medium according to the present disclosure, it is possible to achieve both uniform line width formation and productivity improvement.

FIG. 1 is a perspective view showing a substrate processing system. 2 is a cross-sectional view taken along line II-II in FIG. 3 is a cross-sectional view taken along line III-III in FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. FIG. 5 is a diagram schematically illustrating a hardware configuration of the substrate processing system. FIG. 6 is a diagram schematically illustrating the hardware configuration of the controller. FIG. 7 is a cross-sectional view showing a film thickness measuring unit. FIG. 8 is a flowchart for explaining a procedure for generating line width correlation data. FIG. 9 is a diagram illustrating an example of the first correlation data table. FIG. 10 is a graph showing an example of the second correlation data table. FIG. 11 is a graph showing an example of the line width correlation data table. FIG. 12 is a flowchart for explaining an example of a resist pattern forming method. FIG. 13A shows the line width distribution in the wafer surface when the correction processing is not performed, and FIG. 13B shows the line width distribution in the wafer surface when the correction processing is performed. . FIG. 14 is a flowchart for explaining another example of a resist pattern forming method.

  Since the embodiment according to the present disclosure described below is an example for explaining the present invention, the present invention should not be limited to the following contents. In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

[Substrate processing system]
As shown in FIG. 1, a substrate processing system 1 (substrate processing apparatus) includes a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller 100 (control unit). The exposure apparatus 3 performs an exposure process (pattern exposure) of the resist film R (see FIG. 5) formed on the surface Wa (see FIG. 5) of the wafer W (substrate). Specifically, the energy beam is selectively irradiated onto the exposure target portion of the resist film (photosensitive coating) by a method such as immersion exposure. Examples of the energy rays include ArF excimer laser, KrF excimer laser, g-line, i-line, and extreme ultraviolet (EUV).

  The coating and developing apparatus 2 performs a process of forming a resist film R on the surface Wa of the wafer W before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film R after the exposure process. The wafer W may have a disk shape, a part of a circle may be cut off, or may have a shape other than a circle such as a polygon. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the wafer W may be about 200 mm to 450 mm, for example.

  As shown in FIGS. 1 to 4, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  As shown in FIGS. 3 and 4, the carrier block 4 has a carrier station 12 and a carry-in / carry-out unit 13. The carrier station 12 supports a plurality of carriers 11. For example, the carrier 11 contains a plurality of wafers W in a sealed state, and has an opening / closing door (not shown) for taking in and out the wafers W on the side surface 11a side. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 is located between the carrier station 12 and the processing block 5. The carry-in / carry-out unit 13 includes a plurality of opening / closing doors 13 a corresponding to the plurality of carriers 11 on the carrier station 12. By opening the open / close door and the open / close door 13a of the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 incorporates a delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

  As illustrated in FIGS. 1 and 2, the processing block 5 includes a BCT module 14, an HMCT module 15, a COT module 16, and a DEV module 17. The BCT module 14 is a lower layer film forming module. The HMCT module 15 is an intermediate film (hard mask) forming module. The COT module 16 is a resist film forming module. The DEV module 17 is a development processing module. These modules are arranged in the order of the DEV module 17, the BCT module 14, the HMCT module 15, and the COT module 16 from the floor side.

  The BCT module 14 is configured to form a lower layer film on the surface of the wafer W. The BCT module 14 incorporates a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A2 (see FIG. 2) for transferring the wafer W to these units. . The coating unit is configured to form a coating film by coating a coating solution for forming a lower layer film on the surface of the wafer W. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the BCT module 14 is a heat treatment for curing the coating film to form a lower layer film. Examples of the lower layer film include an antireflection (SiARC) film.

  The HMCT module 15 is configured to form an intermediate film on the lower layer film. The HMCT module 15 includes a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A3 (see FIG. 2) that transfers the wafer W to these units. . The coating unit is configured to apply a coating liquid for forming an intermediate film on the surface of the wafer W to form a coating film. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the HMCT module 15 include a heat treatment for curing the coating film to form an intermediate film. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film.

  The COT module 16 is configured to form a thermosetting and photosensitive resist film R on the intermediate film. As shown in FIGS. 2 and 3, the COT module 16 transports a wafer W to a plurality of coating units U1, a plurality of heat treatment units U2, a film thickness measurement unit U3 (measurement unit), and these units. A transfer arm A4 (see FIG. 2) is incorporated. The coating unit U1 is configured to apply a processing liquid (resist agent) for forming a resist film on the intermediate film to form a coating film. The heat treatment unit U2 is configured to heat the wafer W by, for example, a hot plate, and to perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the COT module 16 include a heat treatment (PAB: Pre Applied Bake) for curing the coating film to form a resist film. Details of the film thickness measurement unit U3 will be described later.

  The DEV module 17 is configured to perform development processing of the exposed resist film. 2 and 4, the DEV module 17 includes a plurality of developing units U4 (developing units), a plurality of heat treatment units U5 (heating units and correcting units), and a film thickness measuring unit U6 (measuring unit). And a light irradiation unit U7 (correction unit), a transfer arm A5 that transfers the wafer W to these units, and a direct transfer arm A6 that transfers the wafer W without passing through these units. The developing unit U4 is configured to partially remove the resist film R to form a resist pattern. The heat treatment unit U5 is configured to heat the wafer W by, for example, a hot plate, and perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. The heat treatment unit U5 has a plurality of heating regions, and is configured to be able to set different temperatures for each heating region. Specific examples of the heat treatment performed in the DEV module 17 include a heat treatment before development processing (PEB: Post Exposure Bake), a heat treatment after development processing (PB: Post Bake), and the like. Details of the film thickness measurement unit U6 will be described later. The light irradiation unit U7 exposes the resist film R on the wafer W with UV light. The exposure method by the light irradiation unit U7 may be a batch exposure method or a step method. The batch exposure method is a method in which, when exposing one region of the resist film R, the region is irradiated with UV light while the reticle (mask) and the wafer W are stationary. In the step method, when one region of the resist film R is exposed, the region is irradiated with UV light while moving the reticle (mask) and the wafer W.

  A shelf unit U10 is provided on the carrier block 4 side in the processing block 5 (see FIGS. 2 to 4). The shelf unit U10 is provided so as to extend from the floor surface to the HMCT module 15, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10.

  A shelf unit U11 is provided on the interface block 6 side in the processing block 5 (see FIGS. 2 to 4). The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the DEV module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11 and deliver it to the exposure apparatus 3, and to receive the wafer W from the exposure apparatus 3 and return it to the shelf unit U11.

  The controller 100 controls the substrate processing system 1 partially or entirely. As shown in FIG. 5, the controller 100 includes an instruction unit M1, a storage unit M2, a processing unit M3, an estimation unit M4, a setting unit M5, and a reading unit M6 as functional modules. These functional modules are merely the functions of the controller 100 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware configuring the controller 100 is divided into such modules. Each functional module is not limited to what is realized by executing a program, and is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) in which this is integrated. Also good.

  The instruction unit M1 controls various devices of the substrate processing system 1 (for example, the coating unit U1, the heat treatment units U2 and U5, the film thickness measurement units U3 and U6, the development unit U4, and the light irradiation unit U7). A predetermined instruction is given. For example, the instruction unit M1 executes a program based on the correction condition set in the setting unit M5, and operates various apparatuses of the substrate processing system 1.

  The storage unit M2 stores various data. The storage unit M2 is, for example, a program read by the reading unit M6 and various data tables (details will be described later, for example, a film thickness data table, a pixel value data table, a film thickness correlation data table, a line width data table). , Film thickness difference data table and line width correlation data table).

  The processing unit M3 processes various data. For example, the processing unit M3 processes a captured image of the camera 22a. The processing unit M3 generates, for example, a film thickness correlation data table and a line width correlation data table, which will be described later, based on various data stored in the storage unit M2.

  The estimation unit M4 estimates the line width of the resist pattern after development based on the measured film thickness of the resist film R and the line width correlation data table.

  The setting unit M5 sets correction conditions or development conditions for making the line width uniform based on the line width estimated by the estimation unit M4.

  The reading unit M6 reads a program from the computer-readable recording medium 200. The recording medium 200 records a program for causing the substrate processing system 1 to execute various operations. The recording medium 200 may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

  The hardware of the controller 100 is configured by, for example, one or a plurality of control computers. The controller 100 includes, for example, a circuit 101 shown in FIG. 6 as a hardware configuration. The circuit 101 may be composed of electrical circuit elements. Specifically, the circuit 101 includes a processor 102, a memory 103, a storage 104, a driver 105, and an input / output port 106. The processor 102 executes the program in cooperation with at least one of the memory 103 and the storage 104, and executes input / output of signals through the input / output port 106, thereby configuring each functional module described above. The driver 105 is a circuit that drives various devices of the substrate processing system 1. The input / output port 106 inputs and outputs signals between the driver 105 and various devices of the substrate processing system 1.

  In the present embodiment, the substrate processing system 1 includes one controller 100, but may include a controller group (control unit) including a plurality of controllers 100. When the substrate processing system 1 includes a controller group, each of the functional modules may be realized by one controller 100 or may be realized by a combination of two or more controllers 100. . When the controller 100 includes a plurality of computers (circuits 101), each of the functional modules may be realized by one computer (circuit 101), or two or more computers (circuits 101). ) May be realized. The controller 100 may have a plurality of processors 102. In this case, each of the functional modules may be realized by a single processor 102 or may be realized by a combination of two or more processors 102.

[Thickness measurement unit]
Next, an example of the film thickness measurement units U3 and U6 will be described in more detail with reference to FIG. Since the configuration and operation of the film thickness measurement units U3 and U6 are the same, the film thickness measurement unit U3 will be described below, and the description of the film thickness measurement unit U6 will be omitted. When the multilayer film including the resist film R is formed on the wafer W, only the film thickness of the resist film R may be measured by the film thickness measuring units U3 and U6, or the multilayer film including the resist film R may be measured. You may measure the film thickness of the whole film | membrane. In this specification, “measuring the film thickness of the resist film R” includes not only measuring the film thickness of the resist film R but also measuring the film thickness of the entire multilayer film including the resist film R.

  The film thickness measurement unit U <b> 3 includes a housing 20, a holding drive unit 21 and an imaging unit 22 disposed in the housing 20.

  The holding drive unit 21 includes a holding base 21a, actuators 21b and 21c, and a guide rail 21d. The holding table 21a holds the wafer W substantially horizontally by suction or the like, for example. The actuator 21b is, for example, an electric motor, and rotationally drives the holding base 21a. The actuator 21c is, for example, a linear actuator, and moves the holding base 21a along the guide rail 21d. That is, the actuator 21c carries the wafer W held on the holding table 21a between one end side and the other end side of the guide rail 21d based on an instruction from the controller 100. The guide rail 21d extends linearly (for example, linearly) within the housing 20.

  The imaging unit 22 includes a camera 22a, a half mirror 22b, and a light source 22c. The camera 22a is, for example, a wide-angle CCD camera. The camera 22 a is attached to the side wall of the housing 20. The camera 22a faces the half mirror 22b. The camera 22a performs imaging based on an instruction from the controller 100, and transmits the captured image data to the controller 100. The half mirror 22b is attached to the top wall of the housing 20 in a state inclined by approximately 45 ° with respect to the horizontal direction. The half mirror 22b is located above the middle part of the guide rail 21d. The light source 22c is located above the half mirror 22b. The light emitted from the light source 22c passes through the half mirror 22b and is irradiated downward (on the guide rail 21d side). The light that has passed through the half mirror 22b is reflected by an object below the half mirror 22b, is further reflected by the half mirror 22b, and enters the camera 22a. That is, the camera 22a can capture an image of an object present in the irradiation area of the light source 22c via the half mirror 22b.

  Next, a method for measuring the film thickness of the resist film R by the film thickness measuring unit U3 will be described. First, a film thickness correlation data table in which pixel values (RGB values) are associated with the film thickness of the resist film R is prepared. Specifically, the instruction unit M1 instructs the COT module 16 to form a resist film on a sample wafer (not shown). Subsequently, the film thickness of the resist film is measured using, for example, a film thickness meter using a reflection spectroscopy method. The film thickness of the resist film may be measured manually, or may be automatically measured by a measuring device including the film thickness meter. Thereby, a film thickness data table in which coordinates and film thicknesses are associated with each measurement point is obtained. The film thickness data table is stored in the storage unit M2.

  Subsequently, the instruction unit M1 instructs the film thickness measurement unit U3 to image the resist film on the preparation wafer with the camera 22a. The processing unit M3 processes the captured image, calculates a pixel value for each pixel, and generates a pixel value data table in which the coordinates and the pixel values at the coordinates are associated with each other. The generated pixel value data table is stored in the storage unit M2.

  Subsequently, the processing unit M3 associates the film thickness in the film thickness data table with the pixel value in the pixel value data table via the coordinates (using the coordinates as a key), thereby obtaining the pixel value and the film thickness. A data table (thickness correlation data table) showing the correlation is generated. The generated film thickness correlation data table is stored in the storage unit M2.

  When the preparation of the film thickness correlation data table is completed, the film thickness of the resist film R can be measured by the film thickness measuring unit U3. Specifically, the instruction unit M1 instructs the film thickness measurement unit U3 to suck and hold the wafer W on which the resist film R, which is a film thickness measurement target, is formed, on the holding table 21a. Further, the instruction unit M1 instructs the film thickness measurement unit U3 to move the holding base 21a by the actuator 21c so that the wafer W is positioned below the half mirror 22b. In this state, the instruction unit M1 controls the camera 22a and images the resist film R on the wafer W with the camera 22a.

  Subsequently, the processing unit M3 processes a captured image of the resist film R captured by the camera 22a, and calculates a pixel value (RGB value) for each pixel. The processing unit M3 refers to the film thickness correlation data table and obtains a film thickness corresponding to the pixel value for each pixel of the captured image. Thereby, the film thickness distribution of the resist film R on the wafer W (the film thickness of the resist film R in the plane of the wafer W) can be obtained.

[Line width correlation data table generation procedure]
Next, as a preparation for estimating the line width of the resist pattern, a procedure for generating a line width correlation data table will be described with reference to FIG.

  First, a plurality of sample wafers (not shown) for preparation are prepared (step S101). Specifically, the carrier 11 containing a plurality of sample wafers is installed in the carrier station 12. The instruction unit M1 instructs the transfer arm A1, and the sample wafers are taken out from the carrier 11 one by one by the transfer arm A1. Thereafter, each sample wafer is transferred one by one to the processing block 5 by the transfer arm A1.

  Next, the instructing unit M1 instructs each apparatus of the substrate processing system 1, and a lower layer film, an intermediate film, and a resist film are sequentially formed on the surface of each sample wafer (step S102: resist film forming process). The film thickness of the resist film formed on the surface of each sample wafer is set to be substantially the same. In the process of forming these films, each sample wafer is sequentially transferred to the BCT module 14, the HMCT module 15, and the COT module 16. In the COT module 16, a heat treatment (PAB) of the resist film is also performed by the heat treatment unit U2.

  Next, the instruction unit M1 instructs the film thickness measurement unit U3, and the film thickness measurement unit U3 measures the film thickness distribution of the resist film formed on each sample wafer (step S103: film thickness measurement process). . The film thickness data measured for each sample wafer is stored in the storage unit M2.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and each sample wafer having a resist film formed on the surface is transferred to the exposure apparatus 3 one by one. The exposure apparatus 3 irradiates the resist film with energy rays in a predetermined pattern based on an instruction from the instruction unit M1 (step S104: pattern exposure process). At this time, when the resist film is subjected to pattern exposure, the structure of the polymer constituting the resist film changes, and the film thickness of the resist film in the exposed portion slightly changes.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and each sample wafer is transferred to the heat treatment unit U5 one by one. The heat treatment unit U5 performs heat treatment (PEB) on the resist film after pattern exposure based on the instruction from the instruction unit M1 (step S105: post-exposure baking process). At this time, when the resist film is heated, the polymer structure of the pattern-exposed portion of the resist film is more likely to change. In step S105, each sample wafer is subjected to heat treatment at a different temperature for a predetermined time. The temperature data of the heat treatment for each sample wafer is stored in the storage unit M2.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and each sample wafer is transferred to the film thickness measurement unit U6 one by one. The film thickness measurement unit U6 measures the film thickness distribution of the resist film after the heat treatment (PEB) for each sample wafer based on the instruction from the instruction unit M1 (step S106: film thickness measurement process). The film thickness data measured for each sample wafer is stored in the storage unit M2.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and each sample wafer is transferred to the developing unit U4 one by one. The development unit U4 develops the resist film one by one for each sample wafer based on the instruction from the instruction unit M1 (step S107: development process). Thereby, a resist pattern having a predetermined shape is formed on each sample wafer. As the developer, a positive developer or a negative developer may be used depending on the application.

  Next, the line width of the resist pattern formed on each sample wafer is measured using a line width measuring apparatus (not shown) (step S108: line width measuring step). The measured line width data is stored in the storage unit M2.

  Next, based on the various data stored in the storage unit M2, the processing unit M3 generates a line width correlation data table (step S109: data table generation step). Specifically, the processing unit M3 associates the temperature data obtained in step S105 with the line width data obtained in step S108, thereby obtaining a correlation data table (first correlation data table) of temperature and line width. ) Is generated. In FIG. 9, an example of the first correlation data table is shown as a graph. According to FIG. 9, the line width tends to decrease as the heating temperature in step S105 increases, and the line width tends to increase as the heating temperature in step S105 decreases.

  The processing unit M3 calculates the film thickness difference data for each sample wafer by subtracting the film thickness data obtained in steps S106 and S108 between the same sample wafers. The processing unit M3 generates a correlation data table (second correlation data table) between the temperature and the film thickness difference by associating the temperature data obtained in step S105 with the film thickness difference data. In FIG. 10, an example of the second correlation data table is shown as a graph. According to FIG. 10, the difference in film thickness tends to increase as the heating temperature in step S105 increases, and the difference in film thickness tends to decrease as the heating temperature in step S105 decreases.

  The processing unit M3 associates the line width data in the first correlation data table with the film thickness difference data in the second correlation data table via the temperature data (using the temperature data as a key). Then, a correlation data table (line width correlation data table) between the film thickness difference and the line width is generated. In FIG. 11, an example of the line width correlation data table is shown as a graph. By preparing the line width correlation data table in advance, by obtaining the film thickness difference between the film thickness of the resist film R before the pattern exposure process and the film thickness of the resist film R after the post-exposure baking process, The line width of the resist pattern after development can be estimated with reference to the line width correlation data table.

[Resist pattern formation method]
Next, a method for forming a predetermined resist pattern on the wafer (one form of the substrate processing method according to this embodiment) in the substrate processing system 1 will be described with reference to FIG.

  First, the wafer W is prepared (step S201). Specifically, the carrier 11 containing the wafer W is installed in the carrier station 12. The instruction unit M1 instructs the transfer arm A1, and the wafer W is taken out from the carrier 11 by the transfer arm A1. Thereafter, the wafer W is sent to the processing block 5 by the transfer arm A1.

  Next, the instruction unit M1 instructs each apparatus of the processing block 5, and a lower layer film, an intermediate film, and a resist film R are sequentially formed on the surface Wa of the wafer W (step S202: resist film etc. forming step). In the process of forming these films, the wafer W is sequentially transferred to the BCT module 14, the HMCT module 15, and the COT module 16. In the COT module 16, the heat treatment (PAB) of the resist film R is also performed by the heat treatment unit U2.

  Next, the instruction unit M1 instructs the film thickness measurement unit U3, and the film thickness measurement unit U3 measures the film thickness distribution of the resist film R formed on the wafer W (step S203: film thickness measurement process). . The measured film thickness data is stored in the storage unit M2.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W having the resist film R formed on the surface Wa is transferred to the exposure apparatus 3. The exposure apparatus 3 irradiates the resist film R with energy rays in a predetermined pattern based on an instruction from the instruction unit M1 (step S204: pattern exposure process). At this time, when the resist film R is subjected to pattern exposure, the structure of the polymer constituting the resist film R changes, and the film thickness of the resist film R in the exposed portion slightly changes.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W is transferred to the heat treatment unit U5. The heat treatment unit U5 performs a heating process (1st PEB) on the resist film R after pattern exposure based on an instruction from the instruction unit M1 (step S205: first post-exposure baking process). At this time, when the resist film R is heated, the structure of the polymer in the pattern-exposed portion of the resist film R is more likely to change.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W is transferred to the film thickness measurement unit U6. The film thickness measurement unit U6 measures the film thickness distribution of the resist film R after the heat treatment (1st PEB) based on the instruction from the instruction unit M1 (step S206: film thickness measurement process). The measured film thickness data is stored in the storage unit M2. The processing unit M3 subtracts the film thickness data obtained in steps S203 and S206 between the same coordinates of the wafer W to calculate film thickness difference data.

  Next, the estimation unit M4 estimates the line width of the resist pattern when the resist film R is developed (step S207: line width estimation step). Specifically, the estimation unit M4 refers to the line width correlation data table, and calculates a line width (estimated line width) corresponding to the film thickness difference data calculated by the processing unit M3 in the plane of the wafer W.

  Next, the processing unit M3 determines whether or not the estimated line width calculated in step S207 varies in the plane of the wafer W (step S208: first determination step). Specifically, the processing unit M3 determines whether or not the variation (for example, 3σ) of the estimated line width exceeds a predetermined threshold value. The threshold value of 3σ may be an arbitrary value less than 1.0 nm, for example.

  If the result of determination in step S208 is that the estimated line width variation exceeds a predetermined threshold value (YES in step S208), the correction condition for the setting unit M5 to equalize the line width in the plane of the wafer W Is set (step S209: correction condition setting step). Specifically, in the subsequent heating process of wafer W in step S210, the setting unit M5 makes the heating temperature of the region having a large estimated line width in the resist film R higher than the heating temperature of the other regions. Set correction conditions (heating conditions).

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W is transferred to the heat treatment unit U5. The heat treatment unit U5 performs the second heat treatment (2nd PEB) on the resist film R based on the instruction from the instruction unit M1 (step S210: second post-exposure baking process). At this time, the temperature of each heating region in the heat treatment unit U5 is adjusted to a value corresponding to the correction condition (heating condition) set by the setting unit M5 in step S209. That is, in step S210, correction processing based on the correction conditions in step S209 is performed.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W is transferred to the developing unit U4. The developing unit U4 supplies the developing solution to the resist film R after step S209 based on the instruction from the instruction unit M1 (step S211: developing process). Thereby, a predetermined resist pattern is formed on the surface Wa of the wafer W. In the development step, a positive developer or a negative developer may be used depending on the application.

  Thereafter, etching (for example, wet etching or dry etching) of the wafer W may be performed using the resist pattern formed in step S211 as a mask. After the etching process, the resist pattern existing on the surface Wa of the wafer W may be removed.

  As a result of the determination in step S208, if the variation in the estimated line width is equal to or smaller than the predetermined threshold (NO in step S208), the average value (average line width) of the estimated line width calculated in step S207 has the predetermined threshold. The processing unit M3 determines whether or not it exceeds (step S212: second determination step). For example, when the target line width is X nm, the processing unit M3 determines whether or not the average line width exceeds the range of (X−0.3) nm to (X + 0.3) nm. Good. Therefore, when the target line width is 20 nm, it is determined whether or not the average line width is in the range of 19.7 nm to 20.3 nm.

  When the average value of the estimated line widths exceeds the predetermined threshold as a result of the determination in step S212 (YES in step S212), the setting unit M5 reduces the line width in the plane of the wafer W as a whole. Development conditions are set (step S213: development condition setting step). Specifically, the setting unit M5 changes the development conditions so that the development time is longer than usual in the subsequent development processing of the resist film R in step S211. Thereafter, the process proceeds to step S211, and development processing of the resist film R is performed.

  As a result of the determination in step S212, if the average value of the estimated line widths is equal to or smaller than the predetermined threshold value (NO in step S212), the process proceeds to step S211 without changing the development conditions, and the resist film under the normal development conditions R development processing is performed.

  Here, two wafers W were prepared as test samples 1 and 2 on which the resist film R was formed on the surface Wa through the same process so that the in-plane film thickness distribution was the same. For the test sample 1, steps S204, S205, and S211 were performed without performing steps S209 and S210. The line width distribution of the resist pattern thus formed is shown in FIG. The line width 3σ of the resist pattern was 1.50 nm.

  On the other hand, for the test sample 2, steps S204 to S207 and S209 to S211 were performed. The line width distribution of the resist pattern thus formed is shown in FIG. The line width 3σ of the resist pattern was 0.66 nm. Therefore, it was confirmed that in the test sample 2 that has undergone step S209 (correction condition setting step) and step S210 (second post-exposure baking step), a resist pattern having a uniform line width can be formed in the plane of the wafer W. .

[Action]
In the present embodiment as described above, the controller 100 sets the correction conditions for the resist film R by the heat treatment unit U5 based on the film thickness measured by the film thickness measurement unit U6 (step S209). Specifically, when the line width estimated based on the film thickness measured by the film thickness measurement unit U6 (estimated line width) is not uniform in the wafer W plane (YES in step S208), the resist film A correction condition is set such that the line width actually formed in a portion of R where the estimated line width is large is small. In the present embodiment, the controller 100 controls the heat treatment unit U5 to perform the correction process on the resist film R based on the set correction condition, and after the heat treatment by the heat treatment unit U5 (after the correction process). The developing unit U4 is controlled so as to develop the resist film R). As described above, in this embodiment, the correction processing for the variation in the estimated line width and the development processing are performed on the same wafer W as the film thickness measurement target of the resist film R by the film thickness measurement unit U6. That is, necessary correction is performed by so-called feedforward control, and a desired resist pattern line width is obtained. Therefore, since information obtained during processing of another wafer W is not used when forming a resist pattern, the wafer W can be processed quickly and the generation of the wafer W to be reprocessed can be suppressed. Therefore, according to the present embodiment, it is possible to achieve both the formation of a uniform line width and the improvement of productivity.

  In the present embodiment, the film thickness measurement unit U6 measures the film thickness of the resist film R after being heated by the heat treatment unit U5 (step S206). By heat-treating the resist film R after pattern exposure by the heat treatment unit U5, the structure of the polymer of the resist film R subjected to pattern exposure is more likely to change. Therefore, after the heat treatment of the resist film R by the heating unit, the film thickness of the resist film R in the exposed portion changes more greatly. Therefore, the estimated line width can be obtained with higher accuracy.

  In this embodiment, the film thickness measurement unit U3 measures the film thickness of the resist film R before pattern exposure, and the film thickness measurement unit U6 measures the film thickness of the resist film R after being heated by the heat treatment unit U5. Yes. And the controller 100 has set the correction conditions of the resist film R by the heat processing unit U5 based on these film thickness differences (film thickness differences). Therefore, even if there is a variation in the film thickness of the resist film R disposed on the wafer W from the beginning, the influence of the variation is greatly reduced by obtaining the film thickness difference. Therefore, since the change in the film thickness of the resist film R due to pattern exposure can be grasped more accurately, the estimated line width can be obtained more accurately.

  In the present embodiment, the controller 100 sets conditions for developing the resist film R by the developing unit U4 based on the film thickness measured by the film thickness measuring unit U6 (step S213). Specifically, when the average value of the line width (estimated line width) estimated based on the film thickness measured by the film thickness measurement unit U6 exceeds a predetermined threshold (YES in step S212), the development time Is set to a development condition for a long time. In this embodiment, the controller 100 controls the developing unit U4 to develop the resist film R based on the set development conditions. As described above, in the present embodiment, for the same wafer W as the film thickness measurement target of the resist film R by the film thickness measurement unit U6, the development condition change with respect to the estimated line width and the development processing are performed. Done. That is, necessary correction is performed by so-called feedforward control, and a desired resist pattern line width is obtained. Therefore, since information obtained during processing of another wafer W is not used when forming a resist pattern, the wafer W can be processed quickly and the generation of the wafer W to be reprocessed can be suppressed. Therefore, according to the present embodiment, it is possible to achieve both the formation of a uniform line width and the improvement of productivity.

[Other Embodiments]
As mentioned above, although embodiment concerning this indication was described in detail, you may add various deformation | transformation to said embodiment within the range of the summary of this invention. For example, as shown in FIG. 14, the resist film R may be exposed after step S209 (correction condition setting step) and before step S210 (second post-exposure baking step) (step S214: Exposure step). In this case, in step S209, the setting unit M5 corrects so that the exposure amount in the region of the resist film R where the estimated line width is large is higher than the exposure amount in other regions in the subsequent exposure processing in step S214. Set the conditions (exposure conditions).

  Next, in step S214, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W is transferred to the light irradiation unit U7. The light irradiation unit U7 performs an exposure process on the resist film R for each exposure region based on an instruction from the instruction unit M1. At this time, the exposure amount of each exposure region by the light irradiation unit U7 is adjusted to a size according to the correction condition (exposure condition) set by the setting unit M5 in step S209. That is, in step S214, correction processing based on the correction conditions in step S209 is performed.

  Next, the instruction unit M1 instructs each apparatus of the substrate processing system 1, and the wafer W is transferred to the heat treatment unit U5. The heat treatment unit U5 performs the second heat treatment (2nd PEB) on the resist film R based on an instruction from the instruction unit M1. At this time, the temperature of each heating region in the heat treatment unit U5 may be set to be substantially the same, or when the setting unit M5 has set the heating condition in step S209, the heating condition is set to the heating condition. The value may be adjusted accordingly.

  In the above embodiment, the controller 100 sets the correction condition for the resist film R by the heat treatment unit U5 based on the difference in film thickness (film thickness difference) of the resist film R measured by the film thickness measurement units U3 and U6. However, the correction condition may be set based on at least the film thickness of the resist film R after the pattern exposure step (step S204).

  In the above description, the heat treatment unit U5 or the light irradiation unit U7 provided in the DEV module 17 is used to perform the correction process on the resist film R. However, the correction is performed in any apparatus provided in the substrate processing system 1. Processing may be performed.

  In the above description, the heating temperature in the heat treatment unit U5 and the exposure amount in the light irradiation unit U7 are adjusted according to the correction conditions, but other parameters may be adjusted according to the correction conditions.

  The “data table” in this specification may be a set of data sets in which data are associated one-to-one, or an approximate function (for example, approximate straight line) in which data is approximated by a predetermined straight line or curve. , Approximate curve).

  As an upper layer film, an antireflection film may be formed on the resist film R. In this case, a lower layer film that functions as an antireflection film may or may not be formed on the wafer W. In this case, before forming the upper layer film, only the film thickness of the resist film R located on the outermost surface may be measured, or the entire film thickness may be measured. Alternatively, the entire film thickness may be measured after the formation of the upper layer film.

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing system (substrate processing apparatus), 2 ... Coating and developing apparatus (substrate processing apparatus), 16 ... COT module, 17 ... DEV module, 100 ... Controller (control part), R ... Resist film, U3, U6 ... Film Thickness measurement unit (measurement unit), U4 ... development unit (development unit), U5 ... heat treatment unit (heating unit, correction unit), U7 ... light irradiation unit (correction unit), W ... wafer (substrate).

Claims (15)

A measurement unit arranged on the surface of the substrate and configured to measure the film thickness of the resist film after pattern exposure;
A correction heating unit configured to perform a correction heating process on the resist film;
A developing unit configured to develop the resist film;
A control unit,
The controller is
A first process for setting correction heating conditions for the resist film by the correction heating unit based on the film thickness measured by the measurement unit;
A second process for controlling the correction heating unit to cause the resist film to perform a correction heating process based on the correction heating condition set in the first process;
A substrate processing apparatus that executes a third process for controlling the developing unit so as to develop the resist film after the second process is performed. Further comprising a heating unit configured to heat-treat the resist film after pattern exposure,
The substrate processing apparatus according to claim 1, wherein the measurement unit is configured to measure a film thickness of the resist film after being heated by the heating unit. The measurement unit is configured to measure a first film thickness of the resist film after being heated by the heating unit and a second film thickness of the resist film before pattern exposure,
The control unit sets a correction heating condition of the resist film by the correction heating unit based on a difference between the first film thickness and the second film thickness in the first process. 2. The substrate processing apparatus according to 1. The control unit, in the first process,
Estimating the line width of the resist pattern obtained by developing the resist film based on the film thickness measured by the measurement unit, and obtaining the estimated line width ;
Wherein based on the estimated line width, the run and setting the heating temperature for the resist film, the substrate processing apparatus according to any one of claims 1 to 3.   Setting the heating temperature for the resist film sets the heating temperature for the first region of the resist film to be higher than the heating temperature for the second region of the resist film different from the first region. Including
  The substrate processing apparatus according to claim 4, wherein the estimated line width in the first region is larger than the estimated line width in the second region. The measurement unit of the multi-layer film including and the resist film is disposed on the surface of the substrate, the resist film is configured to only measure the thickness of any one of claims 1 to 5 The substrate processing apparatus according to item. The measuring unit is configured and arranged to measure the total thickness of the multilayer film including and the resist film is disposed on the surface of the substrate, the substrate processing according to any one of claims 1 to 5 apparatus. A step of obtaining a first film thickness by measuring the film thickness of a resist film disposed on the surface of the substrate and after pattern exposure;
Setting correction heating conditions based on the measured film thickness of the resist film;
Performing a correction heating process on the resist film based on a set correction heating condition;
And a step of developing the resist film after the correction heat treatment is performed. Further comprising a step of heat-treating the resist film after pattern exposure,
The substrate processing method according to claim 8 , wherein in the step of obtaining the first film thickness, the film thickness of the resist film is measured after the step of heat-treating the resist film. Further comprising measuring the thickness of the resist film before pattern exposure to obtain a second thickness;
The substrate processing method according to claim 9 , wherein in the step of setting correction conditions, correction heating conditions for the resist film are set based on a difference between the first film thickness and the second film thickness. As the factory to set the correction conditions,
Estimating the line width of the resist pattern obtained by developing the resist film based on the measured first film thickness, and obtaining the estimated line width ;
The substrate processing method according to claim 8, further comprising: setting a heating temperature for the resist film based on the estimated line width.   Setting the heating temperature for the resist film sets the heating temperature for the first region of the resist film to be higher than the heating temperature for the second region of the resist film different from the first region. Including
  The method of claim 11, wherein the estimated line width in the first region is greater than the estimated line width in the second region. 13. The method according to claim 8 , wherein, in the step of measuring the film thickness of the resist film, only the film thickness of the resist film is measured out of a multilayer film disposed on the surface of the substrate and including the resist film. The substrate processing method according to claim 1. The said process of measuring the film thickness of the said resist film WHEREIN: The film thickness of the whole multilayer film which is arrange | positioned on the surface of the said board | substrate and contains the said resist film is measured. Substrate processing method. A computer-readable recording medium having recorded thereon a program for causing a substrate processing apparatus to execute the substrate processing method according to claim 8 .