JP6391558B2 - Heat treatment apparatus, method for heat treatment of substrate, and computer-readable recording medium - Google Patents

Description

  The present disclosure relates to a heat treatment apparatus, a method for heat treating a substrate, and a computer-readable recording medium.

  Patent document 1 is disclosing the heat processing apparatus provided with the hot plate which heats a board | substrate, and the cooling plate which cools a board | substrate. The heat treatment apparatus, for example, after heat treatment (PAB: Pre Applied Bake) for evaporating the solvent of the resist solution applied to the surface of the substrate when the substrate is finely processed using a photolithography technique or after the exposure treatment. Then, a heat treatment (PEB: Post Exposure Bake) for promoting the chemical reaction of the coating film on the upper surface of the substrate, a heat treatment after the development treatment (PB: Post Bake), etc. are performed.

JP 2007-294753 A

  Currently, a microfabrication process for forming a concavo-convex pattern (for example, a resist pattern) on the surface of a substrate (for example, a semiconductor wafer, a glass wafer, or other various wafers) using a photolithography technique is widely performed. Particularly, in recent years, with further miniaturization of the concavo-convex pattern, there has been an increasing demand for uniformly heat-treating various materials arranged on the substrate surface within the substrate surface.

  However, the substrate may be warped, or minute foreign matter may exist between the substrate and the hot plate or the cooling plate. In these cases, the amount of heat transferred between the hot plate and the cooling plate is not uniform in the plane of the substrate. Therefore, the in-plane temperature distribution of the substrate becomes non-uniform immediately after the substrate is placed on the hot plate or the cooling plate or for a while after being placed. Accordingly, there is a possibility that the chemical reaction of various materials arranged on the substrate surface varies and the line width of the uneven pattern becomes non-uniform.

  Therefore, the present disclosure describes a heat treatment apparatus capable of more uniformly controlling the in-plane temperature distribution of a substrate, a method for heat treating a substrate, and a computer-readable recording medium.

  A heat treatment apparatus according to one aspect of the present disclosure includes a hot plate configured to apply heat to a substrate, a heater configured to heat the hot plate, and a substrate that can be transferred to the hot plate. A transfer plate, a plurality of temperature control members configured to be temperature-adjustable independently for each of a plurality of regions of the transfer plate, and a control unit. A first process for heating the first substrate set at a predetermined initial temperature by a hot plate; a second process for acquiring an in-plane temperature distribution generated in the first substrate during the first process; A plurality of temperature control members are controlled to generate a temperature distribution on the transfer plate that offsets the non-uniformity of the in-plane temperature distribution acquired in the second process, and the in-plane temperature distribution of the second substrate is transferred. The third process adjusted by the plate, and the second temperature controlled in the third process by controlling the heater A plate to perform a fourth process of heating by a hot plate.

  In the heat treatment apparatus according to one aspect of the present disclosure, the control unit controls a plurality of temperature control members to transfer a temperature distribution that cancels out the in-plane temperature distribution non-uniformity acquired in the second process. A third process is performed in which the in-plane temperature distribution of the second substrate is adjusted by the transfer plate. In other words, when the temperature of the second substrate is adjusted by the transfer plate in the third process, the temperature of the region that is easily heated by the hot plate in the second substrate is set in advance relatively low, The temperature of the region of the two substrates that is difficult to be heated by the hot plate is set to be relatively high in advance. Therefore, the control unit executes the subsequent fourth process, and the in-plane temperature distribution of the second substrate is just after the second substrate is placed on the hot plate or for a while after being placed. Is made uniform. Accordingly, the in-plane temperature distribution of the substrate can be controlled more uniformly, and the line width of the concavo-convex pattern can be further uniformed.

  The first substrate is provided with a temperature measuring member capable of acquiring the in-plane temperature distribution of the first substrate, and the control unit performs the first substrate during the first processing in the second processing. The in-plane temperature distribution generated in the step may be acquired by a temperature measuring member. In this case, since the first substrate can be used as a temperature measurement substrate, the product substrate is not wasted in order to obtain the in-plane temperature distribution in the first process. Therefore, the substrate can be heat treated at a lower cost.

  The control unit cools the first substrate heated in the first process by a transfer plate whose entire surface is set to a predetermined cooling temperature, and the first substrate in the fifth process. The sixth process for acquiring the in-plane temperature distribution that occurs in the process and the temperature distribution that controls the plurality of temperature control members to offset the non-uniformity of the in-plane temperature distribution acquired in the sixth process And a seventh process of cooling the second substrate after being heated in the fourth process by the transfer plate. In this case, when the second substrate is cooled by the transfer plate in the seventh process, the temperature of the region of the second substrate that is easily cooled by the transfer plate is set in advance relatively high, The temperature of the region of the substrate that is difficult to be cooled by the transfer plate is set to be relatively low in advance. Therefore, the in-plane temperature distribution of the substrate is made uniform even immediately after the second substrate is placed on the transfer plate or for a while after being placed. Therefore, the line width of the concavo-convex pattern can be further uniformed.

  The first substrate is provided with a temperature measuring member capable of acquiring the in-plane temperature distribution of the first substrate, and the control unit performs the first substrate during the first processing in the second processing. In the sixth process, the in-plane temperature distribution generated in the first substrate during the fifth process may be acquired by the temperature measuring member. In this case, since the first substrate can be used as a temperature measurement substrate, the product substrate is not wasted in order to obtain the in-plane temperature distribution in the first and sixth processes. Therefore, the substrate can be heat treated at a lower cost.

  In the seventh process, the control unit controls the plurality of temperature control members to generate a temperature distribution on the transfer plate that offsets the non-uniformity of the in-plane temperature distribution acquired in the sixth process. After that, all of the plurality of regions may be changed toward a predetermined target temperature. By the way, depending on the material arranged on the substrate surface, there is a material in which the chemical reaction does not stop even if the temperature of the substrate drops to some extent. However, in this case, the in-plane temperature distribution of the second substrate is gradually uniformized while the second substrate is cooled by the transfer plate. Therefore, even when the temperature of the substrate drops to some extent, the chemical reaction of the material disposed on the substrate surface easily proceeds uniformly. Therefore, the line width of the concavo-convex pattern can be further uniformed.

  Each of the plurality of temperature control members may be a Peltier element. In this case, since the Peltier element is excellent in temperature responsiveness, the temperature of each region of the transfer plate can be quickly changed.

  A method for heat-treating a substrate according to another aspect of the present disclosure includes a first step of heating a first substrate whose entire surface is set to a predetermined initial temperature with a hot plate, and a first step during the first step. The second step of acquiring the in-plane temperature distribution generated on the substrate of the substrate and the transfer plate having a plurality of regions configured to be independently temperature-adjustable by the plurality of temperature control members, are acquired in the second step. A temperature distribution that cancels out the non-uniformity of the in-plane temperature distribution, and a temperature adjustment in the third step, in which the in-plane temperature distribution of the second substrate is adjusted by the transfer plate. And a fourth step of heating the second substrate with a hot plate.

  In the method for heat-treating a substrate according to another aspect of the present disclosure, in the third step, a temperature distribution is generated in the transfer plate so as to cancel out the non-uniformity of the in-plane temperature distribution obtained in the second step. The in-plane temperature distribution of the second substrate is adjusted by the transfer plate. In other words, when the temperature of the second substrate is adjusted by the transfer plate in the third process, the temperature of the region that is easily heated by the hot plate in the second substrate is set in advance relatively low, The temperature of the region of the two substrates that is difficult to be heated by the hot plate is set to be relatively high in advance. Therefore, in the fourth step of heating the second substrate with the hot plate, the second substrate is placed on the hot plate immediately after it is placed or even after it is placed for a while. The in-plane temperature distribution is made uniform. Accordingly, the in-plane temperature distribution of the substrate can be controlled more uniformly, and the line width of the concavo-convex pattern can be further uniformed.

  The first substrate is provided with a temperature measuring member capable of acquiring the in-plane temperature distribution of the first substrate. In the second step, the in-plane generated in the first substrate during the first step. The temperature distribution may be acquired by a temperature measuring member. In this case, since the first substrate can be used as a temperature measurement substrate, the product substrate is not wasted in order to obtain the in-plane temperature distribution in the first step. Therefore, the substrate can be heat treated at a lower cost.

  A method of heat treating a substrate according to another aspect of the present disclosure includes a fifth step of cooling the first substrate heated in the first step by a transfer plate whose entire surface is set to a predetermined cooling temperature; The sixth step of acquiring the in-plane temperature distribution generated in the first substrate during the fifth step and the temperature distribution that offsets the non-uniformity of the in-plane temperature distribution acquired in the sixth step are transferred. And a seventh step of cooling the second substrate after being generated in the plate and heated in the fourth step by the transfer plate. In this case, when the second substrate is cooled by the transfer plate in the seventh step, the temperature of the region of the second substrate that is easily cooled by the transfer plate is set to be relatively high in advance. The temperature of the region of the substrate that is difficult to be cooled by the transfer plate is set to be relatively low in advance. Therefore, the in-plane temperature distribution of the substrate is made uniform immediately after the substrate is placed on the transfer plate or for a while after being placed. Therefore, the line width of the concavo-convex pattern can be further uniformed.

  The first substrate is provided with a temperature measuring member capable of acquiring the in-plane temperature distribution of the first substrate. In the second step, the in-plane generated in the first substrate during the first step. The temperature distribution may be acquired by the temperature measuring member, and in the sixth step, the in-plane temperature distribution generated on the first substrate in the fifth step may be acquired by the temperature measuring member. In this case, since the first substrate can be used as a temperature measurement substrate, the product substrate is not wasted in order to obtain the in-plane temperature distribution in the first and sixth steps. Therefore, the substrate can be heat treated at a lower cost.

  In the seventh step, a temperature distribution that cancels out the non-uniformity of the in-plane temperature distribution acquired in the sixth step is generated in the transfer plate, and then all the regions are directed to a predetermined target temperature. It may be changed. By the way, depending on the material arranged on the substrate surface, there is a material in which the chemical reaction does not stop even if the temperature of the substrate drops to some extent. However, in this case, the in-plane temperature distribution of the second substrate is gradually uniformized while the second substrate is cooled by the transfer plate. Therefore, even when the temperature of the substrate drops to some extent, the chemical reaction of the material disposed on the substrate surface easily proceeds uniformly. Therefore, the line width of the concavo-convex pattern can be further uniformed.

  Each of the plurality of temperature control members may be a Peltier element. In this case, since the Peltier element is excellent in temperature responsiveness, the temperature of each region of the transfer plate can be quickly changed.

  A computer-readable recording medium according to another aspect of the present disclosure records a program for causing a heat treatment apparatus to execute the above-described method. In the computer-readable recording medium according to another aspect of the present disclosure, the in-plane temperature distribution of the substrate can be more uniformly controlled as in the above method. In this specification, a computer-readable recording medium includes a non-transitory tangible medium (non-transitory computer recording medium) (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). (E.g., a data signal that can be provided over a network).

  According to the heat treatment apparatus, the substrate heat treatment method, and the computer-readable recording medium according to the present disclosure, the in-plane temperature distribution of the substrate can be more uniformly controlled.

FIG. 1 is a perspective view showing a substrate processing system. 2 is a cross-sectional view taken along line II-II in FIG. 3 is a cross-sectional view taken along line III-III in FIG. FIG. 4 is a cross-sectional view of the heat treatment unit as viewed from the side. FIG. 5 is a cross-sectional view of the heat treatment unit as viewed from above. FIG. 6 is a view of the cooling plate as viewed from above. FIG. 7 is a block diagram showing the heat treatment unit and the controller. FIG. 8 is a schematic diagram illustrating a hardware configuration of the controller. FIG. 9 is a flowchart for explaining a method of acquiring the in-plane temperature distribution by the temperature measuring wafer. FIG. 10A is a graph showing the temperature raising process of the temperature measuring wafer, and FIG. 10B is a graph showing the temperature lowering process of the temperature measuring wafer. FIG. 11 is a diagram illustrating an example of the in-plane temperature distribution of the temperature measuring wafer. FIG. 12 is a flowchart for explaining a method of heat-treating a wafer. FIG. 13 is a diagram illustrating an example of the in-plane temperature distribution of the wafer.

  Since the embodiment according to the present disclosure described below is an example for explaining the present invention, the present invention should not be limited to the following contents. In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

[Substrate processing system]
As shown in FIG. 1, a substrate processing system 1 (substrate processing apparatus) includes a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller 10 (control unit; heat treatment apparatus). The exposure apparatus 3 performs an exposure process (pattern exposure) of the resist film R (see FIG. 4) formed on the surface of the wafer W (second substrate). Specifically, the exposure target portion of the resist film R (photosensitive coating) is selectively irradiated with energy rays by a method such as immersion exposure. Examples of the energy rays include ArF excimer laser, KrF excimer laser, g-line, i-line, and extreme ultraviolet (EUV).

  The coating and developing apparatus 2 performs a process of forming a resist film R on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film R after the exposure process. The wafer W may have a disk shape, a part of a circle may be cut off, or may have a shape other than a circle such as a polygon. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the wafer W may be about 200 mm to 450 mm, for example.

  As shown in FIGS. 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  As shown in FIGS. 1 and 3, the carrier block 4 includes a carrier station 12 and a carry-in / carry-out unit 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates at least one wafer W in a sealed state. On the side surface 11a of the carrier 11, an opening / closing door (not shown) for taking in and out the wafer W is provided. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 is located between the carrier station 12 and the processing block 5. The carry-in / carry-out unit 13 includes a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing door of the carrier 11 faces the opening / closing door 13a. By opening the open / close door 13a and the open / close door on the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 incorporates a delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

  As illustrated in FIGS. 1 and 2, the processing block 5 includes a BCT module 14, an HMCT module 15, a COT module 16, and a DEV module 17. The BCT module 14 is a lower layer film forming module. The HMCT module 15 is an intermediate film (hard mask) forming module. The COT module 16 is a resist film forming module. The DEV module 17 is a development processing module. These modules are arranged in the order of the DEV module 17, the BCT module 14, the HMCT module 15, and the COT module 16 from the floor side.

  The BCT module 14 is configured to form a lower layer film on the surface of the wafer W. The BCT module 14 incorporates a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A2 (see FIG. 2) for transferring the wafer W to these units. . The coating unit is configured to form a coating film by coating a coating solution for forming a lower layer film on the surface of the wafer W. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the BCT module 14 is a heat treatment for curing the coating film to form a lower layer film. Examples of the lower layer film include an antireflection (SiARC) film.

  The HMCT module 15 is configured to form an intermediate film on the lower layer film. The HMCT module 15 includes a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A3 (see FIG. 2) that transfers the wafer W to these units. . The coating unit is configured to apply a coating liquid for forming an intermediate film on the surface of the wafer W to form a coating film. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the HMCT module 15 include a heat treatment for curing the coating film to form an intermediate film. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film.

  The COT module 16 is configured to form a thermosetting and photosensitive resist film R on the intermediate film. As shown in FIGS. 2 and 3, the COT module 16 includes a plurality of coating units U1, a plurality of heat treatment units U2 (heat treatment apparatus), and a transfer arm A4 that transfers the wafer W to these units. ing. The coating unit U1 is configured to apply a processing liquid (resist agent) for forming a resist film on the intermediate film to form a coating film. The heat treatment unit U2 is configured to heat the wafer W by, for example, a hot plate, and to perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the COT module 16 includes a heat treatment (PAB: Pre Applied Bake) for curing the coating film to form the resist film R. Details of the heat treatment unit U2 will be described later.

  The DEV module 17 is configured to perform development processing of the exposed resist film. The DEV module 17 includes a plurality of developing units (not shown), a plurality of heat treatment units (not shown), a transfer arm A5 that transfers the wafer W to these units, and the wafer W without passing through these units. And a direct transfer arm A6 for transferring the. The developing unit is configured to partially remove the resist film R to form a resist pattern. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the DEV module 17 include a heat treatment before development processing (PEB: Post Exposure Bake), a heat treatment after development processing (PB: Post Bake), and the like.

  As shown in FIGS. 2 and 3, a shelf unit U <b> 10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is provided so as to extend from the floor surface to the HMCT module 15, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10.

  A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the DEV module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11 and deliver it to the exposure apparatus 3, and to receive the wafer W from the exposure apparatus 3 and return it to the shelf unit U11.

  The controller 10 controls the substrate processing system 1 partially or entirely. Details of the controller 10 will be described later.

[Configuration of heat treatment unit]
Next, the configuration of the heat treatment unit U2 will be described in more detail with reference to FIGS. In this specification, the configuration of the heat treatment unit U2 of the COT module 16 is described, but the configurations of the heat treatment units of the BCT module 14, the HMCT module 15, and the DEV module 17 are also equivalent to the heat treatment unit U2.

  As shown in FIGS. 4 and 5, the heat treatment unit U <b> 2 includes a heating unit 110 that heats the wafer W and a cooling unit 120 that cools the wafer W in the housing 100. A loading / unloading port 101 for carrying the wafer W into the housing 100 and carrying the wafer W out of the housing 100 is formed on both side walls of the portion corresponding to the cooling unit 120 in the housing 100. (See FIG. 5).

  The heating unit 110 includes a lid portion 111 (accommodating housing) and a hot plate housing portion 112 (accommodating housing). The lid portion 111 is located above the hot plate housing portion 112 and can be moved up and down between an upper position separated from the hot plate housing portion 112 and a lower position placed on the hot plate housing portion 112. It is. The lid part 111 constitutes the processing chamber PR together with the hot plate accommodating part 112 when in the lower position. An exhaust part 111 a for exhausting gas from the processing chamber PR is provided at the center of the lid part 111.

  The hot plate housing portion 112 has a cylindrical shape, and houses the hot plate 113 therein. The outer peripheral portion of the hot plate 113 is supported by a support member 114. The outer periphery of the support member 114 is supported by a cylindrical support ring 115. A gas supply port 115 a that opens upward is formed on the upper surface of the support ring 115. The gas supply port 115a is configured to eject an inert gas into the processing chamber PR.

  As shown in FIG. 5, the hot plate 113 is a flat plate having a circular shape. The outer shape of the hot plate 113 is larger than the outer shape of the wafer W. The heat plate 113 is formed with three through holes HL extending in the thickness direction. At least three support pins PN that support the wafer W are provided upright on the upper surface of the hot plate 113. The height of the support pin PN may be about 100 μm, for example. A heater 116 configured to heat the hot plate 113 is disposed on the lower surface of the hot plate 113. As shown in FIG. 4, a temperature sensor 117 configured to measure the temperature of the hot plate 113 is disposed inside the hot plate 113.

  An elevating mechanism 119 is disposed below the hot plate 113. The elevating mechanism 119 includes a motor 119a disposed outside the housing 100, and three elevating pins 119b that move up and down by the motor 119a. The elevating pins 119b are respectively inserted into the corresponding through holes HL. When the tip of the lift pins 119b protrudes above the hot plate 113 and the support pins PN, the wafer W can be placed on the tips of the lift pins 119b. The wafer W placed on the tip of the lift pins 119b moves up and down as the lift pins 119b move up and down.

  As shown in FIGS. 4 and 5, the cooling unit 120 is located adjacent to the heating unit 110. The cooling unit 120 includes a cooling plate (transfer plate) 121 that cools the placed wafer W. As shown in FIG. 5, the cooling plate 121 is a flat plate having a substantially circular shape, and is configured to be able to transfer the wafer W.

  The cooling plate 121 is attached to a rail 123 extending toward the heating unit 110 side. The cooling plate 121 is driven by the drive unit 124 and can move horizontally on the rail 123. The cooling plate 121 that has moved to the heating unit 110 side is located above the heating plate 113. Therefore, the cooling plate 121 can move between a position above the hot plate 113 and a position away from the hot plate 113.

  As shown in FIGS. 5 and 6, the cooling plate 121 is formed with two slits 125 extending along the extending direction of the rail 123. The slit 125 is formed to extend from the end of the cooling plate 121 on the heating unit 110 side to the vicinity of the center of the cooling plate 121. The slit 125 prevents interference between the cooling plate 121 moved to the heating unit 110 side and the elevating pins 119b protruding on the heating plate 113. Therefore, the cooling plate 121 can transfer the wafer W to the hot plate 113 and receive the wafer W from the hot plate 113.

  As shown in FIG. 4, an elevating mechanism 126 is disposed below the cooling plate 121. The elevating mechanism 126 has a motor 126a disposed outside the housing 100 and three elevating pins 126b that move up and down by the motor 126a. Each of the elevating pins 126b is configured to be able to pass through the slit 125. When the tip of the lift pins 126b protrudes above the cooling plate 121, the wafer W can be placed on the tip of the lift pins 126b. The wafer W placed on the tip of the lift pins 126b moves up and down as the lift pins 126b move up and down.

  As shown in FIG. 4, a cooling member (temperature adjustment member) 122 is provided in the cooling plate 121. As shown in FIG. 6, the cooling member 122 has five regions R1 to R5. One region R <b> 1 has a circular shape when viewed from above and constitutes the center of the cooling member 122. The four regions R2 to R5 have a fan shape and are arranged so as to surround the region R1. More specifically, the region R2 is adjacent to the regions R3 and R5, and faces the region R4 with the region R1 interposed therebetween. In the present embodiment, there are two slits 125 in the regions R1, R2, and R5. In particular, the region R5 is divided into three independent portions by two slits 125.

Peltier elements 122a _{1 to} 122a ₄ are arranged in the regions R1 to R4, respectively. Each of the divided three portions of the regions R5, Peltier elements 122a ₅ is arranged. These Peltier elements 122a _{1 to} 122a ₅ can independently adjust the temperatures of the corresponding regions R1 to R5.

Temperature sensors 122b _{1 to} 122b ₄ (temperature measuring members) are arranged on the lower surface or inside of the regions R1 to R4, respectively. A temperature sensor 122b ₅ (temperature measuring member) is disposed in each of the three divided portions of the region R5. These temperature sensors 122b _{1 to} 122b ₅ can independently measure the temperatures of the corresponding regions R1 to R5.

[Controller configuration]
As shown in FIG. 7, the controller 10 includes a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely the functions of the controller 10 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller 10 is divided into such modules. Each functional module is not limited to that realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) in which this is integrated. May be.

  The reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1. As the recording medium RM, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk may be used.

The storage unit M2 stores various data. Storage unit M2 is, for example, the reading portion M1 is read from the recording medium RM program, the hot plate 113 which is input from the temperature sensor 117 the temperature of each region R1~R5 input from the temperature sensor 122b ₁ ~122b ₅ In addition to the temperature, the heating set temperature when the wafer W is heated by the hot plate 113, the cooling set temperature when the wafer W is cooled by the cooling plate 121, the in-plane temperature distribution acquired by the temperature measuring wafer (details will be described later) ), Etc.

The processing unit M3 processes various data. The processing unit M3, for example, based on various data stored in the storage unit M2, each unit of the substrate processing system 1 (for example, heater 116, elevating mechanisms 119 and 126, driving unit 124, Peltier elements 122a _{1 to} 122a _5. ) Is generated to operate.

The instruction unit M4 transmits the signal generated in the processing unit M3 to each unit (for example, the heater 116, the elevating mechanisms 119 and 126, the driving unit 124, and the Peltier elements 122a _{1 to} 122a ₅ ). Specifically, the instruction unit M4 transmits an ON / OFF signal to the heater 116, and switches energization to the heater 116. The instruction unit M4 transmits an ascending signal or a descending signal to the motor 119a and moves the lifting pin 119b up and down. The instruction unit M4 transmits an ascending signal or a descending signal to the motor 126a, and moves the lifting pin 126b up and down. The instruction unit M4 transmits a driving signal to the driving unit 124, and between the first position where the cooling plate 121 is located above the hot plate 113 and the second position where the cooling plate 121 is separated from the hot plate 113. The cooling plate 121 is moved horizontally along the rail 123. The instruction unit M4 transmits a control signal to the Peltier elements 122a _{1 to} 122a ₅ and independently adjusts the temperatures of the corresponding regions R1 to R5.

  The hardware of the controller 10 is configured by one or a plurality of control computers, for example. The controller 10 includes, for example, a circuit 10A illustrated in FIG. 8 as a hardware configuration. The circuit 10A may be composed of electric circuit elements (circuitry). Specifically, the circuit 10A includes a processor 10B, a memory 10C, a storage 10D, a driver 10E, and an input / output port 10F. The processor 10B executes the program in cooperation with at least one of the memory 10C and the storage 10D, and executes the input / output of signals through the input / output port 10F, thereby configuring each functional module described above. The driver 10 </ b> E is a circuit that drives various devices of the substrate processing system 1. The input / output port 10F performs input / output of signals between the driver 10E and various devices of the substrate processing system 1.

  In the present embodiment, the substrate processing system 1 includes one controller 10, but may include a controller group (control unit) including a plurality of controllers 10. When the substrate processing system 1 includes a controller group, each of the functional modules may be realized by a single controller 10 or may be realized by a combination of two or more controllers 10. . When the controller 10 is composed of a plurality of computers (circuit 10A), each of the above functional modules may be realized by one computer (circuit 10A), or two or more computers (circuit 10A). ) May be realized. The controller 10 may have a plurality of processors 10B. In this case, each of the functional modules may be realized by one processor 10B, or may be realized by a combination of two or more processors 10B.

[Acquisition method of in-plane temperature distribution by temperature measuring wafer]
Next, a method for obtaining an in-plane temperature distribution using a temperature measuring wafer (first substrate) will be described with reference to FIG. The temperature measuring wafer is obtained by embedding temperature measuring members (for example, thermocouples) at a plurality of locations on the wafer W, and is configured to be able to acquire an in-plane temperature distribution of the temperature measuring wafer. First, the controller 10 controls the drive unit 124 and the elevating mechanisms 119 and 126 to convey the temperature measuring wafer from the cooling plate 121 to the hot plate 113 (step S11; first processing; first step). At this time, the temperature of the hot plate 113 is adjusted to a predetermined heating set temperature (for example, about 70 ° C. to 130 ° C.) by the heater 116. The temperature measuring wafer is entirely (entirely) set to a predetermined initial temperature (for example, room temperature), and the in-plane temperature distribution of the temperature measuring wafer is set to be substantially uniform.

  When the temperature measuring wafer is placed on the hot plate 113 (on the support pins PN), the temperature measuring wafer is heated by the hot plate 113. The temperature measuring member of the temperature measuring wafer acquires the in-plane temperature distribution of the temperature measuring wafer at this time with time, and transmits the data to the controller 10 (step S12; second process; second process). Process). At this time, the temperature of the temperature measuring wafer changes, for example, as shown by a solid line in FIG. On the other hand, the variation (3σ) in the in-plane temperature distribution of the temperature measuring wafer changes, for example, as shown by a broken line in FIG. According to FIG. 10A, the variation in the in-plane temperature distribution of the temperature measuring wafer becomes the largest about 3 seconds after the temperature measuring wafer is placed on the hot plate 113, and the maximum is, for example, ± 2 ° C. A temperature difference of about ~ 3 ° C is shown. FIG. 11A shows an example of the in-plane temperature distribution of the temperature measuring wafer when the variation (3σ) is maximum. In FIG. 11 and FIG. 13 described later, the dark color indicates a high temperature and the light color indicates a low temperature.

  Next, the controller 10 calculates a temperature distribution (temperature increase temperature distribution) that cancels the non-uniformity (variation) in the in-plane temperature distribution generated on the temperature measuring wafer based on the data acquired in step S12. (Step S13). Specifically, for example, the in-plane temperature distribution of the temperature measuring wafer when the variation (3σ) is maximum, the average distribution of the in-plane temperature distribution acquired by the temperature measuring wafer, and the like are used. The point value is subtracted from the average value of each point value. As a result, a correction distribution is obtained that is 0 at a point showing the same value as the average value, negative at a point showing a value larger than the average value, and positive at a point showing a value smaller than the average value. Subsequently, the cooling set temperature (for example, about 23 ° C.) of the wafer W by the cooling plate 121 is added to each point of the correction distribution. Thereby, the temperature distribution for temperature increase is calculated.

Next, the controller 10 controls the driving unit 124 and the elevating mechanisms 119 and 126 to convey the temperature measuring wafer from the hot plate 113 to the cooling plate 121 (step S14; fifth process: fifth step). . At this time, the cooling plate 121 is temperature-controlled at a predetermined cooling set temperature (for example, about 20 ° C. to 35 ° C.) by the cooling member 122 (Peltier elements 122a _{1 to} 122a ₅ ). In addition, the temperature measuring wafer is wholly (entirely) heated to the heating set temperature of the hot plate 113 in step S11, and is set so that the in-plane temperature distribution of the temperature measuring wafer is substantially uniform. Has been.

  When the temperature measuring wafer is placed on the cooling plate 121, the temperature measuring wafer is cooled by the cooling plate 121. The temperature measuring member of the temperature measuring wafer acquires the in-plane temperature distribution of the temperature measuring wafer at this time with time and transmits the data to the controller 10 (step S15; sixth process; sixth). Process). At this time, the temperature of the temperature measuring wafer changes, for example, as shown by a solid line in FIG. On the other hand, the variation (3σ) in the in-plane temperature distribution of the temperature measuring wafer changes, for example, as shown by the broken line in FIG. According to FIG. 10B, the variation in the in-plane temperature distribution of the temperature measuring wafer becomes the largest about 134 seconds after the temperature measuring wafer is placed on the cooling plate 121, and is, for example, ± 2 ° C. at the maximum. A temperature difference of about ~ 3 ° C is shown. FIG. 11B shows an example of the in-plane temperature distribution of the temperature measuring wafer when the variation (3σ) is maximum.

  Next, the controller 10 calculates a temperature distribution (temperature decreasing temperature distribution) that cancels the non-uniformity (variation) in the in-plane temperature distribution generated on the temperature measuring wafer based on the data acquired in step S15. (Step S16). The method for calculating the temperature distribution for temperature reduction is the same as the method for calculating the temperature distribution for temperature increase in step S13.

[Wafer heat treatment method]
Next, with reference to FIG. 12, a heat treatment method for the wafer W in the heat treatment unit U2 will be described. In this specification, the method of heat-treating the wafer W on which the resist film R is formed by the heat treatment unit U2 of the COT module 16 is described. However, the wafer W on which various films are formed on the surface is treated as a BCT module. 14, the method of heat treatment in the HMCT module 15 and the DEV module 17 is the same as the following.

First, the controller 10 controls the cooling member 122 (Peltier elements 122a _{1 to} 122a ₅ ) based on the temperature distribution for temperature increase calculated in step S13, and gives a predetermined temperature distribution to each region R1 to R5 of the cooling plate 121. It is generated (step S21). An example of the temperature distribution of the cooling plate 121 at this time is shown in FIG. In the example shown in FIG. 13A, the shading is reversed with respect to FIG.

  Next, the controller 10 controls each part of the substrate processing system 1 to place the wafer W having the resist film R formed on the surface thereof on the cooling plate 121 (step S22; third process; third process). ). As a result, temperature distributions in the regions R1 to R5 of the cooling plate 121 are also generated in the wafer W.

Next, the controller 10 controls the drive unit 124 and the lifting mechanisms 119 and 126 to transfer the wafer W from the cooling plate 121 to the hot plate 113 (step S23; fourth process; fourth step). At this time, the wafer W is heated to a predetermined heating set temperature by the hot plate 113. The heating time of the wafer W by the hot plate 113 may be about 40 seconds to 120 seconds, for example. During the heating of the wafer W by the hot plate 113, the controller 10 controls the cooling member 122 (Peltier elements 122a _{1 to} 122a ₅ ) based on the temperature distribution for temperature reduction calculated in step S16, and each region R1 of the cooling plate 121. A predetermined temperature distribution is generated in .about.R5 (step S24).

  Next, the controller 10 controls the drive unit 124 and the lifting mechanisms 119 and 126 to transfer the wafer W from the hot plate 113 to the cooling plate 121 (step S25; seventh process; seventh step). At this time, the wafer W is cooled by the cooling plate 121. The cooling time of the wafer W by the cooling plate 121 may be about 5 seconds to 30 seconds, for example.

In step S <b> 25, the controller 10 controls the cooling member 122 (Peltier elements 122 a _{1 to} 122 a ₅ ), and after starting the cooling of the wafer W by the cooling plate 121, the temperature of each region R <b> _{1 to} R <b> ₅ of the cooling plate 121 is predetermined. You may change toward cooling preset temperature. When the control is performed by the controller 10, for example, among the regions R <b> 1 to R <b> 5 of the cooling plate 121, the region where the temperature is higher than the cooling set temperature is gradually lowered so as to become the cooling set temperature. Of these regions R1 to R5, the region where the temperature is lower than the cooling set temperature is gradually raised to the cooling set temperature. The control by the controller 10 may be executed immediately after the cooling of the wafer W by the cooling plate 121 is started, or may be executed about 5 to 15 seconds after the cooling of the wafer W by the cooling plate 121 is started. In this case, during the cooling of the wafer W by the cooling plate 121, the temperature of the wafer W is gradually equalized to the cooling set temperature. Therefore, even when the chemical reaction proceeds even when the material (resist film R in the present embodiment) disposed on the surface of the wafer W proceeds at a certain low temperature, the chemical reaction of the material easily proceeds uniformly during the cooling of the wafer W. Become. Therefore, the line width of the concavo-convex pattern can be made more uniform.

  Next, the controller 10 controls each part of the substrate processing system 1 to carry out the wafer W cooled to the cooling set temperature in step S25 from the heat treatment unit U2 (step S26). Thus, the heat treatment of the wafer W is completed.

[Action]
In the present embodiment as described above, based on the in-plane temperature distribution data acquired in step S12, the cooling plate 121 has a temperature distribution that cancels out the non-uniformity of the in-plane temperature distribution generated in the temperature measuring wafer. (Step S21), and the temperature of the wafer W is heated by the cooling plate 121 (Step S22). In other words, when the temperature of the wafer W is adjusted by the cooling plate 121 in step S21, the temperature of the region of the wafer W that is easily heated by the hot plate 113 is set to be relatively low in advance, and the heat of the wafer W is increased. The temperature of the region that is difficult to be heated by the plate 113 is set to be relatively high in advance. Therefore, in the subsequent step S23, the heating of the wafer W by the hot plate 113 is started, and the in-plane temperature of the wafer W is just after the wafer W is placed on the hot plate 113 or even after it is placed for a while. The distribution is made uniform (see FIG. 13B). Accordingly, the in-plane temperature distribution of the wafer W can be controlled more uniformly, and the line width of the concavo-convex pattern can be further uniformized.

  In the present embodiment, based on the in-plane temperature distribution data acquired in step S15, a temperature distribution that cancels out the non-uniformity of the in-plane temperature distribution generated in the temperature measuring wafer is generated in the cooling plate 121 ( In step S24, the temperature of the wafer W is cooled by the cooling plate 121 (step S25). In other words, when the temperature of the wafer W is controlled by the cooling plate 121 in step S25, the temperature of the region of the wafer W that is easily cooled by the cooling plate 121 is set in advance relatively high, and the cooling of the wafer W is performed. The temperature of the region difficult to be cooled by the plate 121 is set in advance relatively low. For this reason, the in-plane temperature distribution of the wafer W is made uniform immediately after the wafer W is placed on the cooling plate 121 or even for a while after being placed. Therefore, the in-plane temperature distribution of the wafer W can be controlled more uniformly, and the line width of the concavo-convex pattern can be made more uniform.

  In the present embodiment, the temperature increasing temperature distribution and the temperature decreasing temperature distribution are acquired in advance using a temperature measuring wafer provided with a temperature measuring member capable of acquiring the in-plane temperature distribution (steps S13 and S16). Therefore, the product wafer W is not wasted when acquiring the temperature increase temperature distribution and the temperature decrease temperature distribution. Therefore, the wafer W can be heat-treated at a lower cost.

In the present embodiment, the temperature control by each Peltier element 122a ₁ ~122a ₅ the temperature of each region R1~R5 cooling plate 121. Since the Peltier elements 122a _{1 to} 122a ₅ are excellent in temperature responsiveness, the temperatures of the regions R1 to R5 of the cooling plate 121 can be quickly changed.

[Other Embodiments]
As mentioned above, although embodiment concerning this indication was described in detail, you may add various deformation | transformation to said embodiment within the range of the summary of this invention. For example, temperature control of each region R1~R5 cooling plate 121 is not limited to the Peltier element 122a ₁ ~122a _5, it may be used other means such as water cooling.

  The cooling plate 121 is not limited to the five regions R <b> 1 to R <b> 5 as long as it has a plurality of regions whose temperatures can be adjusted independently.

  In order to obtain the temperature distribution for temperature rise and the temperature distribution for temperature drop in advance, the temperature measurement wafer is used in the above embodiment, but the temperature measurement wafer may not be used. In this case, the in-plane temperature distribution of the wafer W may be acquired when the wafer W is heated by the hot plate 113 using the hot plate 113 in which temperature measuring members (for example, thermocouples) are embedded at a plurality of locations.

DESCRIPTION OF SYMBOLS 1 ... Substrate processing system, 10 ... Controller (control part; Heat processing apparatus), 100 ... Case, 110 ... Heating part, 113 ... Heat plate, 116 ... Heater, 120 ... Cooling part, 121 ... Cooling plate (transfer plate), 122 ... Cooling member (temperature control member), 122a _{1 to} 122a ₅ ... Peltier element (temperature control member), 122b _{1 to} 122b ₅ ... Temperature sensor (temperature measurement member), R ... Resist film, R1 to R5 ... region, RM ... recording medium, U2 ... heat treatment unit (heat treatment apparatus), W ... wafer (substrate).

Claims (13)

A hot plate configured to impart heat to the substrate;
A heater configured to heat the hot plate;
A transfer plate configured to be able to transfer a substrate to the heat plate;
A plurality of temperature control members configured to be temperature adjustable independently for each of a plurality of regions of the transfer plate;
A control unit,
The controller is
A first process of controlling the heater to heat the first substrate whose entire surface is set to a predetermined initial temperature by the hot plate;
A second process for obtaining an in-plane temperature distribution generated in the first substrate during the first process;
By controlling the plurality of temperature control members, a temperature distribution is generated in the transfer plate so as to cancel out the non-uniformity of the in-plane temperature distribution acquired in the second process, and the in-plane of the second substrate A third process for adjusting the temperature distribution by the transfer plate;
The heat processing apparatus which controls the said heater and performs the 4th process which heats the said 2nd board | substrate temperature-controlled in the said 3rd process with the said hot platen. The first substrate is provided with a temperature measuring member capable of acquiring an in-plane temperature distribution of the first substrate,
2. The heat treatment apparatus according to claim 1, wherein the control unit acquires, in the second process, an in-plane temperature distribution generated in the first substrate during the first process by the temperature measuring member. The controller is
A fifth process in which the first substrate heated in the first process is cooled by a transfer plate whose entire surface is set at a predetermined cooling temperature;
A sixth process for obtaining an in-plane temperature distribution generated in the first substrate during the fifth process;
The plurality of temperature control members are controlled to generate a temperature distribution on the transfer plate that cancels out the non-uniformity of the in-plane temperature distribution acquired in the sixth process, and heated in the fourth process. The heat treatment apparatus according to claim 1, further performing a seventh process of cooling the second substrate after being processed by the transfer plate. The first substrate is provided with a temperature measuring member capable of acquiring an in-plane temperature distribution of the first substrate,
The controller is
In the second process, the temperature measurement member obtains the in-plane temperature distribution generated on the first substrate during the first process, and
The heat treatment apparatus according to claim 3, wherein in the sixth process, the in-plane temperature distribution generated in the first substrate during the fifth process is acquired by the temperature measuring member.   In the seventh process, the control unit controls the plurality of temperature control members so as to cancel the non-uniformity of the in-plane temperature distribution acquired in the sixth process. The heat treatment apparatus according to claim 3 or 4, wherein all of the plurality of regions are changed toward a predetermined target temperature after being generated on the transfer plate.   The heat treatment apparatus according to any one of claims 1 to 5, wherein each of the plurality of temperature control members is a Peltier element. A first step of heating the first substrate whose entire surface is set to a predetermined initial temperature with a hot plate;
A second step of obtaining an in-plane temperature distribution generated in the first substrate during the first step;
A temperature that offsets the non-uniformity of the in-plane temperature distribution obtained in the second step with respect to a transfer plate having a plurality of regions that are configured to be independently temperature adjustable by a plurality of temperature control members. A third step of generating a distribution and adjusting an in-plane temperature distribution of the second substrate by the transfer plate;
And a fourth step of heating the second substrate temperature-controlled in the third step by the hot plate. The first substrate is provided with a temperature measuring member capable of acquiring an in-plane temperature distribution of the first substrate,
The method according to claim 7, wherein in the second step, an in-plane temperature distribution generated in the first substrate during the first step is acquired by the temperature measuring member. A fifth step of cooling the first substrate heated in the first step by the transfer plate whose entire surface is set to a predetermined cooling temperature;
A sixth step of obtaining an in-plane temperature distribution generated in the first substrate during the fifth step;
A temperature distribution that cancels out non-uniformity of the in-plane temperature distribution acquired in the sixth step is generated in the transfer plate, and the second substrate after being heated in the fourth step is The method according to claim 7, further comprising a seventh step of cooling by the transfer plate. The first substrate is provided with a temperature measuring member capable of acquiring an in-plane temperature distribution of the first substrate,
In the second step, the in-plane temperature distribution generated in the first substrate during the first step is acquired by the temperature measuring member,
The method according to claim 9, wherein in the sixth step, the in-plane temperature distribution generated in the first substrate during the fifth step is acquired by the temperature measuring member.   In the seventh step, after causing the transfer plate to generate a temperature distribution that cancels out the non-uniformity of the in-plane temperature distribution acquired in the sixth step, all of the plurality of regions are set to be predetermined. The method according to claim 9 or 10, wherein the method is changed toward a target temperature.   The method according to claim 7, wherein each of the plurality of temperature control members is a Peltier element.   The computer-readable recording medium which recorded the program for making a heat processing apparatus perform the method as described in any one of Claims 7-12.