JP2017130505A - Heat treating device, heat treating method, and computer-readable recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve both reduction in processing time of a substrate and lower cost of substrate processing.SOLUTION: A heat treating unit U2 comprises a heating light source 113, a cooling plate 112, a lifting mechanism 114, a storage housing 111, a gas supply unit 116, and a controller 10. The controller 10 performs first processing to fifth processing. The first processing supplies an inert gas into the storage housing 111 by controlling the gas supply unit 116. The second processing holds a wafer W in a separation position in which the wafer W is separated from the cooling plate 112 by controlling the lifting mechanism 114. The third processing heats the wafer W by controlling the heating light source 113 after the first processing and the second processing. The fourth processing stops heating of the wafer W by controlling the heating light source 113 after the third processing. The fifth processing holds the wafer W in an adjacent position in which the wafer W approaches the cooling plate 112 by controlling the lifting mechanism 114 and cools the wafer W by the cooling plate 112 after the fourth processing.SELECTED DRAWING: Figure 4

Description

  The present disclosure relates to a heat treatment apparatus, a heat treatment method, and a computer-readable recording medium.

  Patent Document 1 discloses a heat treatment apparatus that includes a hot plate that heats a substrate in the heat treatment chamber, and a cooling plate that is configured to cool the substrate outside the heat treatment chamber and to carry the substrate into and out of the heat treatment chamber. . The heat treatment apparatus includes, for example, a heat treatment for evaporating a solvent contained in a coating film formed on the surface of the substrate when the substrate is finely processed using a photolithography technique, a heat treatment for promoting a chemical reaction of the coating film, The heat treatment etc. which harden a coating film and make it into a cured film are implemented.

JP 2007-294753 A

  A film that easily oxidizes, such as an SOC (SpinOn Carbon) film or an amorphous carbon film, may be formed on the surface of the substrate. When such a film is formed on the surface of the substrate, the substrate is heated by a hot plate while supplying an inert gas into the heat treatment chamber in order to prevent oxidation of the film. Since the heating temperature of the substrate at this time is a high temperature of about 200 ° C. to 600 ° C., for example, if the substrate is taken out of the heat treatment chamber immediately after the heating of the substrate, the high temperature substrate comes into contact with the atmosphere so Resulting in. Therefore, it is necessary to wait until the temperature of the substrate is lowered to a temperature at which the film is not oxidized while the substrate is accommodated in the heat treatment chamber. In addition, as the substrate is heated, the members constituting the heat treatment chamber are also at a high temperature. Therefore, as shown by the broken line in FIG. 13, the temperature of the substrate is hardly lowered (processing time t1), and the temperature of the substrate after cooling is reduced. (Temperature T1) also tends to be high.

  On the other hand, it is also conceivable to employ a large heat treatment chamber that also accommodates the cooling plate, so that the periphery of the cooling plate is also an inert gas atmosphere. In this case, since the periphery of the cooling plate is also an inert gas atmosphere, the substrate can be transferred from the hot plate to the cooling plate without waiting for the temperature of the substrate to drop. However, since the heat treatment chamber is enlarged to accommodate both the hot plate and the cooling plate, it takes time to fill the heat treatment chamber with the inert gas and consumes a large amount of the inert gas, which increases the cost. To do.

  Accordingly, the present disclosure provides a heat treatment apparatus, a heat treatment method, and a computer-readable device capable of reducing both the heat treatment time of the substrate and reducing the heat treatment cost when forming an easily oxidizable film on the surface of the substrate. A simple recording medium will be described.

  A heat treatment apparatus according to an aspect of the present disclosure includes a heating light source configured to apply radiant heat to a substrate, a cooling plate configured to cool the substrate, and a substrate close to and away from the cooling plate. A drive unit configured to be capable of accommodating a substrate that can be taken in and out and that can hold a substrate held by the drive unit, and a supply unit configured to be able to supply an inert gas in the storage case And a control unit, and the control unit controls the driving unit to hold the substrate at a separated position away from the cooling plate, and controls the supply unit to inactivate the housing. After the second process for supplying the gas, the third process for controlling the heating light source to heat the substrate after the first and second processes, and the substrate for controlling the heating light source after the third process. A fourth process for stopping the heating of the motor, and a drive unit after the fourth process By holding the substrate in proximity position control to a substrate closer to the cooling plate, to perform a fifth process of cooling the substrate in the cooling plate.

  In the heat treatment apparatus according to one aspect of the present disclosure, since the heating light source applies radiant heat to the substrate, the cooling plate is hardly heated by the heating light source. Therefore, the control unit controls the driving unit to hold the substrate at a separated position where the substrate is separated from the cooling plate, and the control unit controls the supply unit to supply the inert gas into the housing case. And the third process of controlling the heating light source to heat the substrate after the first and second processes, the substrate is hardly deprived of heat from the cooling plate. Heated in an active gas atmosphere. On the other hand, after the third process, the control unit controls the heating light source to stop the heating of the substrate, and after the fourth process, the control unit controls the drive unit to bring the substrate closer to the cooling plate. The substrate is effectively cooled in an inert gas atmosphere by holding the substrate at the close position and executing the fifth process of cooling the substrate by the cooling plate. Therefore, the heat treatment time of the substrate can be shortened while suppressing the oxidation of the coating film formed on the surface of the substrate. In addition, since the substrate is heated by the radiant heat by the heating light source, the housing is difficult to reach a high temperature, and the substrate can be cooled particularly effectively by the cooling plate. In addition, since it is sufficient to fill the housing with a size sufficient to accommodate at least the substrate, the amount of the inert gas used can be reduced. As described above, in forming a film that easily oxidizes on the surface of the substrate, it is possible to reduce both the heat treatment time of the substrate and the cost reduction of the heat treatment.

  The heat treatment apparatus according to one aspect of the present disclosure may further include a transfer arm that is positioned outside the housing case and configured to be able to load and unload the substrate with respect to the housing case. In this case, since the transfer arm, which is a relatively large member, is located outside the housing case, the size of the housing case can be reduced. As a result, the amount of inert gas used can be further reduced.

  The cooling plate is made of a material that is transmissive to light emitted from the heating light source, and the heating light source is located on one main surface side of the cooling plate, and the other of the cooling plates. You may be comprised so that radiant heat may be provided to the board | substrate hold | maintained by the drive part in the main surface side. In this case, since the substrate and the heating light source are separated from each other by the cooling plate, foreign matter or the like generated by heating the substrate is difficult to adhere to the heating light source. Therefore, it is possible to save labor for cleaning the heating light source.

  A plurality of flow paths through which the refrigerant flows are provided inside the cooling plate, and the flow rate of the refrigerant in the flow path located near the center of the cooling plate among the plurality of flow paths is out of the plurality of flow paths. You may set so that it may become larger than the flow volume of the refrigerant | coolant in the flow path located near the peripheral part of a cooling plate. In the case of the above, the temperature distribution in the plane of the cooling plate can be made uniform because heat is less likely to escape from the center of the cooling plate and the temperature is likely to increase due to heat exchange with the outside.

  The heat treatment method according to another aspect of the present disclosure includes a first step of holding a substrate carried in a housing case in which the substrate can be taken in and out at a separated position away from the cooling plate, A second step of supplying an active gas, a third step of heating the substrate with a heating light source configured to apply radiant heat to the substrate after the first and second steps, and a third step of A fourth step of stopping the heating light source later, and a fifth step of holding the substrate at a position close to the cooling plate after the fourth step and cooling the substrate with the cooling plate.

  In the heat treatment method according to another aspect of the present disclosure, since the heating light source applies radiant heat to the substrate, the cooling plate is hardly heated by the heating light source. For this reason, in the first step, the substrate is held in a housing case where the substrate can be taken in and out at a separated position away from the cooling plate, and in the second step, inert gas is introduced into the housing case. In the third step after the first and second steps, the substrate is almost deprived of heat from the cooling plate by heating the substrate with a heating light source configured to provide radiant heat to the substrate. Without being heated, it is heated in an inert gas atmosphere. On the other hand, in the fourth step after the third step, the heating light source is stopped, and in the fifth step after the fourth step, the substrate is held at a position close to the cooling plate and the substrate is cooled. By cooling with the plate, the substrate is effectively cooled in an inert gas atmosphere. Therefore, the heat treatment time of the substrate can be shortened while suppressing the oxidation of the coating film formed on the surface of the substrate. In addition, since the inert gas may be filled in at least the housing case that can accommodate the substrate, the amount of inert gas used can be reduced. As described above, in forming a film that easily oxidizes on the surface of the substrate, it is possible to reduce both the heat treatment time of the substrate and the cost reduction of the heat treatment.

  The cooling plate is made of a material that is transparent to the light emitted from the heating light source, and the heating light source can heat the substrate from the opposite side of the substrate between the cooling plates in the third step. Good. In this case, since the substrate and the heating light source are separated from each other by the cooling plate, foreign matter or the like generated by heating the substrate is difficult to adhere to the heating light source. Therefore, it is possible to save labor for cleaning the heating light source.

  A plurality of flow paths through which the refrigerant flows are provided inside the cooling plate, and in the fifth step, the flow rate of the refrigerant in the flow path located near the center of the cooling plate among the plurality of flow paths is: The refrigerant may be circulated through the plurality of flow paths so as to be larger than the flow rate of the refrigerant in the flow path located near the periphery of the cooling plate among the plurality of flow paths. In the case of the above, the temperature distribution in the plane of the cooling plate can be made uniform because heat is less likely to escape from the center of the cooling plate and the temperature is likely to increase due to heat exchange with the outside.

  A computer-readable recording medium according to another aspect of the present disclosure records a program for causing a heat treatment apparatus to execute the above-described method. In the computer-readable recording medium according to another aspect of the present disclosure, in the same way as the above heat treatment method, when forming a film that easily oxidizes on the surface of the substrate, the heat treatment time of the substrate is shortened and the heat treatment cost is reduced. It is possible to achieve both. In this specification, a computer-readable recording medium includes a non-transitory tangible medium (non-transitory computer recording medium) (for example, various main storage devices or auxiliary storage devices) and a propagation signal (transitory computer recording medium). (E.g., a data signal that can be provided over a network).

  According to the heat treatment apparatus, the heat treatment method, and the computer-readable recording medium according to the present disclosure, it is possible to achieve both reduction in substrate processing time and cost reduction in substrate processing.

FIG. 1 is a perspective view showing a substrate processing system. 2 is a cross-sectional view taken along line II-II in FIG. 3 is a cross-sectional view taken along line III-III in FIG. FIG. 4 is a cross-sectional view of the heat treatment unit as viewed from the side. FIG. 5 is a cross-sectional view of the heat treatment unit as viewed from above. 6A is a view of the cooling plate as viewed from above, and FIG. 6B is a cross-sectional view taken along the line AA of FIG. 6A. FIG. 7 is a block diagram showing the heat treatment unit and the controller. FIG. 8 is a schematic diagram illustrating a hardware configuration of the controller. FIG. 9 is a flowchart for explaining the wafer heating process. FIG. 10 is a diagram illustrating a process of heating the wafer. FIG. 11 is a diagram illustrating one process of wafer heat treatment. FIG. 12 is a diagram showing a process of wafer heat treatment. FIG. 13 is a graph showing an example of the relationship between the heat treatment time and the wafer temperature. FIG. 14 is a graph showing the light absorption characteristics of silicon.

  Since the embodiment according to the present disclosure described below is an example for explaining the present invention, the present invention should not be limited to the following contents. In the following description, the same reference numerals are used for the same elements or elements having the same function, and redundant description is omitted.

[Substrate processing system]
As shown in FIG. 1, a substrate processing system 1 (substrate processing apparatus) includes a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller 10 (control unit; heat treatment apparatus). The exposure apparatus 3 performs an exposure process (pattern exposure) of a resist film (photosensitive film) formed on the surface of the wafer W (substrate). Specifically, the exposure target portion of the resist film is selectively irradiated with energy rays by a method such as immersion exposure. Examples of the energy rays include ArF excimer laser, KrF excimer laser, g-line, i-line, and extreme ultraviolet (EUV).

  The coating and developing apparatus 2 performs a process of forming a coating film such as a resist film on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film after the exposure process. The wafer W may have a disk shape, a part of a circle may be cut off, or may have a shape other than a circle such as a polygon. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the wafer W may be about 200 mm to 450 mm, for example. The material of the wafer W may be silicon, for example. Note that, as shown in FIG. 14, silicon has a light absorption rate of about 0.5 to 0.6 with respect to light having a wavelength of about 1.2 μm or less in a wide temperature range.

  As shown in FIGS. 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  As shown in FIGS. 1 and 3, the carrier block 4 includes a carrier station 12 and a carry-in / carry-out unit 13. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates at least one wafer W in a sealed state. On the side surface 11a of the carrier 11, an opening / closing door (not shown) for taking in and out the wafer W is provided. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 is located between the carrier station 12 and the processing block 5. The carry-in / carry-out unit 13 includes a plurality of opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing door of the carrier 11 faces the opening / closing door 13a. By opening the open / close door 13a and the open / close door on the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 incorporates a delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

  As illustrated in FIGS. 1 and 2, the processing block 5 includes a BCT module 14, an HMCT module 15, a COT module 16, and a DEV module 17. The BCT module 14 is a lower layer film forming module. The HMCT module 15 is an intermediate film (hard mask) forming module. The COT module 16 is a resist film forming module. The DEV module 17 is a development processing module. These modules are arranged in the order of the DEV module 17, the BCT module 14, the HMCT module 15, and the COT module 16 from the floor side.

  The BCT module 14 is configured to form a lower layer film on the surface of the wafer W. The BCT module 14 incorporates a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A2 (see FIG. 2) for transferring the wafer W to these units. . The coating unit is configured to form a coating film by coating a coating solution for forming a lower layer film on the surface of the wafer W. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the BCT module 14 is a heat treatment for curing the coating film to form a lower layer film. Examples of the lower layer film include an antireflection (SiARC) film.

  The HMCT module 15 is configured to form an intermediate film R (see FIG. 4) on the lower layer film. As shown in FIGS. 2 and 3, the HMCT module 15 includes a plurality of coating units U1, a plurality of heat treatment units U2 (heat treatment apparatus), and a transfer arm A3 for transferring the wafer W to these units. ing. The coating unit U1 is configured to apply a coating liquid for forming an intermediate film on the surface of the wafer W to form a coating film. The heat treatment unit U2 is configured to heat the wafer W by, for example, a hot plate, and to perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. A specific example of the heat treatment performed in the HMCT module 15 is a heat treatment for curing the coating film to form the intermediate film R. Examples of the intermediate film include an SOC (Spin On Carbon) film and an amorphous carbon film. Details of the heat treatment unit U2 will be described later.

  The COT module 16 is configured to form a thermosetting and photosensitive resist film on the intermediate film R. The COT module 16 includes a plurality of coating units (not shown), a plurality of heat treatment units (not shown), and a transfer arm A4 that transfers the wafer W to these units. The coating unit is configured to apply a processing liquid (resist agent) for forming a resist film on the intermediate film R to form a coating film. The heat treatment unit U2 is configured to heat the wafer W by, for example, a hot plate, and to perform the heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the COT module 16 include a heat treatment (PAB: Pre Applied Bake) for curing the coating film to form a resist film.

  The DEV module 17 is configured to perform development processing of the exposed resist film. The DEV module 17 includes a plurality of developing units (not shown), a plurality of heat treatment units (not shown), a transfer arm A5 that transfers the wafer W to these units, and the wafer W without passing through these units. And a direct transfer arm A6 for transferring the. The developing unit is configured to form a resist pattern by partially removing the resist film. The heat treatment unit is configured to heat the wafer W by, for example, a hot plate, and perform heat treatment by cooling the heated wafer W by, for example, a cooling plate. Specific examples of the heat treatment performed in the DEV module 17 include a heat treatment before development processing (PEB: Post Exposure Bake), a heat treatment after development processing (PB: Post Bake), and the like.

  As shown in FIGS. 2 and 3, a shelf unit U <b> 10 is provided on the carrier block 4 side in the processing block 5. The shelf unit U10 is provided from the floor surface to the HMCT module 15, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10.

  A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is provided from the floor to the top of the DEV module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 is configured to take out the wafer W of the shelf unit U11 and deliver it to the exposure apparatus 3, and to receive the wafer W from the exposure apparatus 3 and return it to the shelf unit U11.

  The controller 10 controls the substrate processing system 1 partially or entirely. Details of the controller 10 will be described later.

[Configuration of heat treatment unit]
Next, the configuration of the heat treatment unit U2 will be described in more detail with reference to FIGS. In this specification, the configuration of the heat treatment unit U2 of the HMCT module 15 is described, but the configurations of the heat treatment units of the BCT module 14, the COT module 16, and the DEV module 17 are also equivalent to the heat treatment unit U2.

  As shown in FIGS. 4 and 5, the heat treatment unit U <b> 2 includes a heating unit 110 that heats the wafer W and a cooling unit 120 that cools the wafer W in the housing 100. A loading / unloading port 101 for carrying the wafer W into the housing 100 and carrying the wafer W out of the housing 100 is formed on both side walls of the portion corresponding to the cooling unit 120 in the housing 100. Yes.

  The heating unit 110 includes a housing case 111, a cooling plate 112, a heating light source 113, an elevating mechanism 114 (drive unit), an elevating mechanism 115, and a gas supply unit 116 (supply unit). The housing case 111 is configured to allow the wafer W to be taken in and out. The housing 111 has a base 111a and a lid 111b. The base 111 a has a cylindrical shape, for example, and is erected on the bottom wall of the housing 100. A supply hole 111 c for supplying gas into the housing case 111 is provided on the side wall of the base 111 a. A pipe D1 extending outside the housing case 111 is connected to the supply hole 111c, and a gas source 116a, a pump P, and a valve V1 are arranged in this order from the upstream side (details will be described later).

  The lid portion 111b has, for example, a bottomed cylindrical shape. The lid portion 111b is arranged so that the open end side thereof faces the upper end side of the base portion 111a. An exhaust hole 111d for exhausting the gas in the lid 111b is provided in the top wall of the lid 111b. A pipe D2 extending outside the housing case 111 is connected to the exhaust hole 111d, and a valve V2 is disposed on the pipe D2.

  As shown in FIG. 6, the cooling plate 112 is a flat plate having a circular shape. The cooling plate 112 is held at the upper end of the base 111a. The outer shape of the cooling plate 112 is larger than the outer shape of the wafer W. In this embodiment, the cooling plate 112 is made of a material that is transmissive to light emitted from a heating light source 113 to be described later. The cooling plate 112 may be made of, for example, quartz glass, sapphire, or the like. Quartz glass has a property of transmitting light having a wavelength of about 0.16 μm to 3 μm. Sapphire has a property of transmitting light having a wavelength of about 0.17 μm to 6.5 μm.

  A plurality of through holes 112a and 112b and a plurality of flow paths 112c are formed in the cooling plate 112. Each of the through holes 112a and 112b extends through the cooling plate 112 in the thickness direction. Each of the plurality of through holes 112a is provided at a position corresponding to an elevating pin 114b described later, and is slightly larger than the outer shape of the elevating pin 114b.

  The plurality of through holes 112b are formed in a second direction (FIG. 6A) that intersects the first direction so as to form a plurality of rows along a predetermined first direction (left-right direction in FIG. 6A). ) In the vertical direction). In other words, the plurality of through holes 112b constituting one row are arranged along the second direction (vertical direction in FIG. 6A). Each row is arranged along the first direction (left-right direction in FIG. 6A). The through hole 112b may be any size as long as gas can flow therethrough, and may be smaller than the through hole 112a.

  A refrigerant can flow in the plurality of flow paths 112c. That is, the cooling plate 112 is configured to be able to cool the wafer W located in the vicinity of the cooling plate 112 by allowing the coolant to flow in the plurality of flow paths 112c. Each of the plurality of flow paths 112c extends along the second direction. The plurality of flow paths 112c are arranged along the first direction. The plurality of flow paths 112c are located between the rows formed by the plurality of through holes 112b.

  In this embodiment, the cross-sectional area of each flow path 112c is larger as the flow path 112c is located near the center of the cooling plate 112 in the first direction, and is located near the peripheral edge of the cooling plate 112 in the first direction. The channel 112c is set to be smaller. That is, the flow rate of the refrigerant in the flow path 112c located near the center of the cooling plate 112 among the plurality of flow paths 112c is the refrigerant in the flow path 112c located near the peripheral edge of the cooling plate 112 among the multiple flow paths 112c. It is set to be larger than the flow rate. As shown in FIG. 6A, the flow direction of the refrigerant in each flow path 112c may be reversed in the adjacent flow paths 112c. The refrigerant is not particularly limited as long as the cooling plate 112 can be cooled, and may be water, air, or the like, for example. The set temperature of the cooling plate 112 may be equal to or lower than a temperature at which the coating film formed on the surface of the wafer W does not oxidize in an oxygen atmosphere or hardly oxidizes.

  The heating light source 113 is disposed in a space surrounded by the base 111 a and the cooling plate 112. That is, in the present embodiment, the heating light source 113 is located on one main surface side of the cooling plate 112 (below the cooling plate 112). The heating light source 113 is configured to apply radiant heat to the wafer W. Specifically, the heating light source 113 is a light source capable of heating an object to, for example, about 400 ° C. to 1000 ° C. by radiant heat.

  Examples of the heating light source 113 include an LED element, a laser light element, and a halogen lamp. As the LED element, for example, GaN (radiation wavelength of about 360 nm to 520 nm), GaAs (radiation wavelength of about 950 nm to 970 nm), GaAlAs (radiation wavelength of about 880 nm) or the like may be used. As shown in FIG. 14, since silicon has an absorptance of about 0.5 to 0.6 with respect to the light emitted from these LED elements, when the wafer W is made of silicon, the wafer W is efficiently processed. Can be heated. Further, when the cooling plate 112 is made of quartz glass or sapphire, the emitted light from these LED elements can pass through the cooling plate 112.

  The elevating mechanism 114 includes a motor 114a and three elevating pins 114b. The motor 114a is disposed outside the housing 100 and moves the elevating pin 114b up and down. The raising / lowering pin 114b is arrange | positioned in the space enclosed by the base 111a and the cooling plate 112. FIG. That is, in the present embodiment, the elevating pins 114b are located on one main surface side of the cooling plate 112 (below the cooling plate 112). The elevating pins 114b can be inserted into the corresponding through holes 112b. When the tips of the lift pins 114b protrude above the cooling plate 112, the wafer W can be placed on the tips of the lift pins 114b. The wafer W placed on the tip of the lift pins 114b moves up and down as the lift pins 114b move up and down. That is, the elevating mechanism 114 is configured to be able to approach and separate the wafer W from the cooling plate 112. In other words, the elevating mechanism 114 is configured to be able to raise and lower the wafer W between a separation position where the wafer W is separated from the cooling plate 112 and a proximity position where the wafer W is close to the cooling plate 112.

  The elevating mechanism 115 includes a motor 115a and elevating pins 115b. The motor 115a is disposed outside the housing 100 and moves the elevating pin 115b up and down. The elevating pins 115b connect the motor 115a and the lid portion 111b in the housing 100. Therefore, the elevating mechanism 115 is configured to be able to approach and separate the lid 111b from the base 111a. In other words, the elevating mechanism 115 is configured to be able to raise and lower the lid portion 111b between a separated position where the lid portion 111b is separated from the base portion 111a and a placement position where the lid portion 111b is placed on the base portion 111a. . When the lid 111 b is in the separated position, the wafer W can be taken in and out of the housing case 111. When the lid portion 111b is at the placement position, the lid portion 111b and the cooling plate 112 constitute a processing space 117 surrounded by them.

  The gas supply unit 116 is configured to be able to supply an inert gas into the housing case 111. Specifically, the gas supply unit 116 includes a gas source 116a, a pump P, a valve V1, and a pipe D1. The gas source 116a functions as a supply source of an inert gas (for example, nitrogen). The pump P sucks an inert gas from the gas source 116a and sends it out into the housing case 111 (inside the base 111a) via the pipe D1 and the valve V1.

  As shown in FIGS. 4 and 5, the cooling unit 120 is located outside the housing case 111 adjacent to the heating unit 110. The cooling unit 120 includes a cooling plate 121 (transfer arm) that cools the mounted wafer W. As shown in FIG. 5, the cooling plate 121 is a flat plate having a substantially circular shape, and is configured to be able to transfer the wafer W. A cooling mechanism (for example, a Peltier element) (not shown) is provided in the cooling plate 121, and the temperature of the cooling plate 121 is maintained at a predetermined temperature (for example, about room temperature) by the cooling mechanism.

  The cooling plate 121 is attached to a rail 122 extending toward the heating unit 110 side. The cooling plate 121 is driven by a moving mechanism 123 and can move horizontally on the rail 122. The cooling plate 121 moved to the heating unit 110 side is located above the cooling plate 112. Therefore, the cooling plate 121 can be moved between a proximity position approaching the cooling plate 112 and a separation position away from the cooling plate 112.

  As shown in FIG. 5, the cooling plate 121 is formed with two slits 121 a extending along the extending direction of the rail 122. The slit 121 a is formed so as to extend from the end of the cooling plate 121 on the heating unit 110 side to the vicinity of the center of the cooling plate 121. The slit 121a prevents interference between the cooling plate 121 moved to the heating unit 110 side and the elevating pins 114b protruding on the cooling plate 112. Therefore, the cooling plate 121 can transfer the wafer W to the cooling plate 112 and receive the wafer W from the cooling plate 112. In other words, the cooling plate 121 is configured so that the wafer W can be carried in and out of the housing case 111.

  As shown in FIG. 4, an elevating mechanism 125 is disposed below the cooling plate 121. The elevating mechanism 125 includes a motor 125a disposed outside the housing 100 and three elevating pins 125b that move up and down by the motor 125a. Each of the elevating pins 125b is configured to be able to pass through the slit 121a. When the tip of the lift pins 125b protrudes above the cooling plate 121, the wafer W can be placed on the tip of the lift pins 125b. The wafer W placed on the tip of the lift pins 125b moves up and down as the lift pins 125b move up and down.

[Controller configuration]
As shown in FIG. 7, the controller 10 includes a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely the functions of the controller 10 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller 10 is divided into such modules. Each functional module is not limited to that realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) in which this is integrated. May be.

  The reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1. As the recording medium RM, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk may be used.

  The storage unit M2 stores various data. The storage unit M2 includes, for example, a program read from the recording medium RM by the reading unit M1, a heating setting temperature when the wafer W is heated by the heating light source 113, and a cooling setting when the wafer W is cooled by the cooling plates 112 and 121. Memorize temperature etc.

  The processing unit M3 processes various data. The processing unit M3, for example, based on various data stored in the storage unit M2, each part of the substrate processing system 1 (for example, pump P, valves V1, V2, heating light source 113, lifting mechanisms 114, 115, 125, A signal for operating the moving mechanism 123) is generated.

  The instruction unit M4 transmits the signal generated in the processing unit M3 to each unit (for example, the pump P, the valves V1 and V2, the heating light source 113, the elevating mechanisms 114, 115, 125, and the moving mechanism 123). . Specifically, the instruction unit M4 transmits an ON / OFF signal to the pump P, and switches between supply and stop of the inert gas from the gas source 116a. The instruction unit M4 transmits an ON / OFF signal to the valves V1 and V2, and switches between opening and closing of the valves V1 and V2. The instruction unit M4 transmits an ON / OFF signal to the heating light source 113 to switch the heating light source 113 on and off. The instruction unit M4 transmits an ascending signal or a descending signal to the elevating mechanism 114, and elevates the elevating pin 124b. The instruction unit M4 transmits an ascending signal or a descending signal to the elevating mechanism 115 and elevates the lid 111b. The instruction unit M4 transmits an ascending signal or a descending signal to the elevating mechanism 125, and elevates the elevating pin 125b. The instruction unit M4 transmits a drive signal to the moving mechanism 123, and horizontally moves the cooling plate 121 along the rail 122 between the upper position and the separated position.

  The hardware of the controller 10 is configured by one or a plurality of control computers, for example. The controller 10 includes, for example, a circuit 10A illustrated in FIG. 8 as a hardware configuration. The circuit 10A may be composed of electric circuit elements (circuitry). Specifically, the circuit 10A includes a processor 10B, a memory 10C, a storage 10D, a driver 10E, and an input / output port 10F. The processor 10B executes the program in cooperation with at least one of the memory 10C and the storage 10D, and executes the input / output of signals through the input / output port 10F, thereby configuring each functional module described above. The driver 10 </ b> E is a circuit that drives various devices of the substrate processing system 1. The input / output port 10F is used for signal transmission between the driver 10E and various devices of the substrate processing system 1 (for example, pump P, valves V1 and V2, heating light source 113, elevating mechanisms 114, 115, and 125, moving mechanism 123). Perform input / output.

  In the present embodiment, the substrate processing system 1 includes one controller 10, but may include a controller group (control unit) including a plurality of controllers 10. When the substrate processing system 1 includes a controller group, each of the functional modules may be realized by a single controller 10 or may be realized by a combination of two or more controllers 10. . When the controller 10 is composed of a plurality of computers (circuit 10A), each of the above functional modules may be realized by one computer (circuit 10A), or two or more computers (circuit 10A). ) May be realized. The controller 10 may have a plurality of processors 10B. In this case, each of the functional modules may be realized by one processor 10B, or may be realized by a combination of two or more processors 10B.

[Wafer heat treatment method]
Subsequently, a heat treatment method for the wafer W in the heat treatment unit U2 will be described with reference to FIGS. In this specification, the method of heat-treating the wafer W on which the intermediate film R is formed by the heat treatment unit U2 of the HMCT module 15 is described. However, the wafer W on which various films are formed on the surface is described as a BCT module. 14, the heat treatment method in the COT module 16 and the DEV module 17 is the same as the following.

  First, the controller 10 controls each part of the substrate processing system 1 to place the wafer W having the intermediate film R formed on the surface thereof on the cooling plate 121. Next, the controller 10 controls the moving mechanism 123 in a state where the lid portion 111b is located at the separation position, and moves the cooling plate 121 from the separation position to the proximity position with respect to the cooling plate 112 (see FIG. 10A). ). Next, the controller 10 controls the elevating mechanism 114 to raise the elevating pin 114b. Thereby, the raising / lowering pins 114b hold | maintain the wafer W through the through-hole 112a and the slit 121a, and position the wafer W in the separation position with respect to the cooling plate 112 in the state. In other words, the wafer W is held by the lift pins 114b on the other main surface side (above the cooling plate 112) of the cooling plate 112 (first process; first step). Thus, the wafer W is transferred from the cooling plate 121 into the housing case 111 (step S11; see FIG. 10B). Next, the controller 10 controls the moving mechanism 123 to move the cooling plate 121 from the proximity position to the cooling plate 112 to the separation position (see the same).

  Next, the controller 10 controls the elevating mechanism 115 to lower the elevating pin 115b. Thereby, the raising / lowering pin 115b moves the cover part 111b from the separation position with respect to the base part 111a to a proximity position (refer Fig.11 (a)). Therefore, the lid portion 111b is placed on the base portion 111a, and the processing space 117 is configured. That is, the housing case 111 is configured to be able to house the wafer W held by the lifting pins 114b.

  Next, the controller 10 controls the pump P and the valves V1 and V2 to drive the pump P and open the valves V1 and V2. Thereby, the inert gas is supplied from the gas source 116a into the housing case 111 (inside the base 111a) (step S12; second processing; second step). The inert gas is supplied into the base 111a, then supplied to the processing space 117 through the through hole 112b, and exhausted through the pipe D2. Accordingly, the inside of the housing case 111 is filled with the inert gas.

  Next, the controller 10 controls the heating light source 113 to light the heating light source 113 in a state in which the housing case 111 is filled with the inert gas. Thereby, the wafer W is heated by the heating light source 113 (step S13; third processing; third step). The heating time of the wafer W by the heating light source 113 can be set to an appropriate time depending on the material of the intermediate film R, but may be, for example, about 60 seconds to 600 seconds. Next, when determining that the wafer W has reached a predetermined temperature, the controller 10 controls the heating light source 113 to turn off the heating light source 113 (fourth process; fourth process).

  Next, the controller 10 controls the elevating mechanism 114 to lower the elevating pin 114b. Thus, the lift pins 114b hold the wafer W and place the wafer W at a position close to the cooling plate 112 in that state. Thereby, the wafer W is cooled by the cooling plate 112 (FIG. 11B; step S14; fifth process; fifth process). The cooling time of the wafer W by the cooling plate 121 can be set to an appropriate time depending on the material of the intermediate film R, but may be, for example, about 10 seconds to 200 seconds.

  Next, the controller 10 controls the pump P and the valves V1 and V2 to stop the pump P and close the valves V1 and V2. Thereby, the supply of the inert gas into the housing case 111 (in the base 111a) is stopped (step S15). Next, the controller 10 controls the elevating mechanism 115 to raise the elevating pin 115b. Thereby, the raising / lowering pin 115b moves the cover part 111b from the proximity position with respect to the base part 111a to a separation position (refer Fig.12 (a)). Next, the controller 10 controls the elevating mechanism 114 to raise the elevating pin 114b (see the same). Next, the controller 10 controls the moving mechanism 123 to move the cooling plate 121 from the separation position to the proximity position with respect to the cooling plate 112 (see the same).

  Next, the controller 10 controls the elevating mechanism 114 to lower the elevating pin 114b. Thereby, the raising / lowering pins 114b move below the cooling plate 112 through the through holes 112a and the slits 121a, and place the wafer W on the cooling plate 121 (see FIG. 12B). Next, the controller 10 controls the moving mechanism 123 to move the cooling plate 121 from the proximity position to the cooling plate 112 to the separation position (see the same). Thus, the wafer W is carried out of the housing case 111 from the cooling plate 121 (step S16; see the same).

[Action]
In the present embodiment as described above, since the heating light source 113 applies radiant heat to the wafer W, the cooling plate 112 is hardly heated by the heating light source 113. Therefore, the controller 10 controls the gas supply unit 116 to supply the inert gas into the housing case 111 and the separation position where the wafer W is separated from the cooling plate 112 by controlling the lifting mechanism 114. The wafer W is cooled by executing the second process for holding the wafer W in step S3 and the third process for controlling the heating light source 113 to heat the wafer W after the first and second processes. The plate 112 is heated in an inert gas atmosphere with almost no heat removed. On the other hand, after the third process, the controller 10 controls the heating light source 113 to stop the heating of the wafer W, and after the fourth process, the controller 10 controls the lifting mechanism 114 to control the wafer W. The wafer W is effectively cooled in an inert gas atmosphere by holding the wafer W at a position close to the cooling plate 112 and performing the fifth process of cooling the wafer W by the cooling plate 112. . Therefore, the heat treatment time of the wafer W can be shortened while suppressing the oxidation of the intermediate film R formed on the surface of the wafer W. Further, since the wafer W is heated by radiant heat by the heating light source 113, the housing case 111 is unlikely to become high temperature, and the wafer W can be cooled particularly effectively by the cooling plate 112. Specifically, as indicated by a solid line in FIG. 13, the processing time t2 of the wafer W is shorter than the conventional processing time t1, and the temperature T2 of the cooled wafer W is also lower than the conventional temperature T1. In addition, since it is sufficient to fill the housing case 111 having a size that can accommodate at least the wafer W with the inert gas, the amount of the inert gas used can be reduced. As described above, in forming a film that easily oxidizes on the surface of the wafer W, it is possible to reduce both the heat treatment time of the wafer W and the cost of the heat treatment.

  In the present embodiment, the cooling plate 121 is positioned outside the housing case 111 so that the wafer W can be loaded into and unloaded from the housing case 111. Therefore, it is not necessary for the cooling plate 121, which is a relatively large member, to fill the space including the housing case 111 with an inert gas. Accordingly, it is possible to further reduce the amount of inert gas used.

  In the present embodiment, the cooling plate 112 is made of a material that is transmissive to the light emitted from the heating light source 113. Further, the heating light source 113 is located on one main surface side of the cooling plate 112 (below the cooling plate 112), and on the other main surface side of the cooling plate 112 (above the cooling plate 112). It is configured to apply radiant heat to the wafer W held by the elevating mechanism 114. Therefore, the wafer W and the heating light source 113 are separated by the cooling plate 112. In addition, the inert gas flows from the base portion 111a side to the lid portion 111b side (in the processing space 117) through the through hole 112b. Therefore, foreign matter or the like generated by heating the wafer W is extremely difficult to adhere to the heating light source 113. Therefore, it is possible to save labor for cleaning the heating light source 113.

  In the present embodiment, a plurality of flow paths 112c through which refrigerant flows are provided inside the cooling plate 112, and the refrigerant in the flow path 112c located near the center of the cooling plate 112 among the plurality of flow paths 112c. The flow rate is set to be larger than the flow rate of the refrigerant in the flow channel 112c located near the peripheral edge of the cooling plate 112 among the plurality of flow channels 112c. In the above case, the temperature distribution in the surface of the cooling plate 112 can be made uniform because heat is less likely to escape from the center of the cooling plate 112 and the temperature is likely to increase due to heat exchange with the outside.

[Other Embodiments]
As mentioned above, although embodiment concerning this indication was described in detail, you may add various deformation | transformation to said embodiment within the range of the summary of this invention. For example, the heating light source 113 may be disposed on the lid 111b side (in the processing space 117). In this case, the cooling plate 112 may not be made of a material that is transmissive to the light emitted from the heating light source 113.

  Among the plurality of channels 112c, the flow rate of the refrigerant in the channel 112c located near the center of the cooling plate 112, and the flow rate of the refrigerant in the channel 112c located near the periphery of the cooling plate 112 among the plurality of channels 112c. The configuration for setting to be larger than the above is not limited to the configuration of the above embodiment. For example, the plurality of flow paths 112c may be arranged concentrically, and the cross-sectional area of each flow path 112c may be set so as to increase toward the center of the cooling plate 112 and decrease toward the periphery. Alternatively, when the cross-sectional area of each flow path 112c is substantially constant, the flow rate of the refrigerant in the flow path 112c located near the center of the cooling plate 112 among the plurality of flow paths 112c is set to the plurality of flow paths 112c. Among these, it may be set to be larger than the flow rate of the refrigerant in the flow path 112c located near the peripheral edge of the cooling plate 112. The shape of the flow path 112c is not limited to a tubular shape, and may be a groove shape.

  DESCRIPTION OF SYMBOLS 1 ... Substrate processing system (substrate processing apparatus), 2 ... Coating and developing apparatus (substrate processing apparatus), 10 ... Controller (control part), 110 ... Heating part, 111 ... Housing | casing housing, 112 ... Cooling plate, 112c ... Flow path , 113 ... heating light source, 114 ... elevating mechanism (drive unit), 116 ... gas supply unit (supply unit), 121 ... cooling plate (conveying arm), R ... intermediate film, RM ... recording medium, U2 ... heat treatment unit (heat treatment) Apparatus), W ... wafer (substrate).

Claims (8)

A heating light source configured to impart radiant heat to the substrate;
A cooling plate configured to cool the substrate;
A drive unit configured to be able to approach and separate the substrate from the cooling plate;
An accommodating housing configured to accommodate the substrate held in the driving unit and capable of taking in and out the substrate;
A supply unit configured to be able to supply an inert gas into the housing case;
A control unit,
The controller is
A first process for controlling the driving unit to hold the substrate at a separated position where the substrate is separated from the cooling plate;
A second process for controlling the supply unit to supply an inert gas into the housing case;
A third process for controlling the heating light source to heat the substrate after the first and second processes;
A fourth process for controlling the heating light source to stop the heating of the substrate after the third process;
After the fourth process, the drive unit is controlled to hold the substrate at a close position where the substrate approaches the cooling plate, and a fifth process is performed to cool the substrate by the cooling plate. , Heat treatment equipment.   The heat treatment apparatus according to claim 1, further comprising a transfer arm that is located outside the storage case and configured to be able to carry the substrate in and out of the storage case. The cooling plate is made of a material that is transparent to the light emitted from the heating light source,
The heating light source is
Located on one main surface side of the cooling plate,
The heat processing apparatus of Claim 1 or 2 comprised so that a radiant heat may be provided to the said board | substrate hold | maintained by the said drive part in the other main surface side among the said cooling plates. Inside the cooling plate, there are provided a plurality of flow paths through which the refrigerant flows,
Among the plurality of channels, the flow rate of the refrigerant in the channel located near the center of the cooling plate is larger than the flow rate of the refrigerant in the channel located near the periphery of the cooling plate among the plurality of channels. The heat processing apparatus as described in any one of Claims 1-3 set so that it may become large. A first step of holding the substrate carried in a housing case in which the substrate can be taken in and out at a separated position away from the cooling plate;
A second step of supplying an inert gas into the housing case;
After the first and second steps, a third step of heating the substrate with a heating light source configured to apply radiant heat to the substrate;
A fourth step of stopping the heating light source after the third step;
And a fifth step of holding, after the fourth step, the substrate in a proximity position where the substrate approaches the cooling plate, and cooling the substrate with the cooling plate. The cooling plate is made of a material that is transparent to the light emitted from the heating light source,
The heat treatment method according to claim 5, wherein the heating light source heats the substrate from a side opposite to the substrate with the cooling plate interposed therebetween in the third step. Inside the cooling plate, there are provided a plurality of flow paths through which the refrigerant flows,
In the fifth step, among the plurality of flow paths, the flow rate of the refrigerant in the flow path positioned near the center of the cooling plate is the flow rate of the plurality of flow paths positioned near the periphery of the cooling plate. The heat processing method of Claim 5 or 6 which distribute | circulates a refrigerant | coolant to these flow paths so that it may become larger than the flow volume of the refrigerant | coolant in a path.   The computer-readable recording medium which recorded the program for making the heat processing apparatus perform the heat processing method as described in any one of Claims 5-7.

Images