JP7117143B2 - SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM - Google Patents

Description

The present disclosure relates to substrate processing apparatuses, substrate processing methods, and computer-readable recording media.

Patent document 1 discloses a method of transporting a substrate before heat treatment by a transport arm including a protrusion configured to place the substrate thereon, and performing heat treatment on the substrate by placing the substrate on a hot plate. and transporting the heat-treated substrate by the transport arm.

JP 2011-86677 A

The present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of suppressing the influence of heat from a transport arm on a substrate.

A substrate processing apparatus according to one aspect of the present disclosure includes a transfer arm including a pad configured to support a lower surface of a substrate, and an airflow generated around the pad to cool the pad. and a cooling unit.

According to the substrate processing apparatus, the substrate processing method, and the computer-readable recording medium according to the present disclosure, it is possible to suppress the influence of the heat of the transport arm on the substrate.

FIG. 1 is a perspective view showing a schematic configuration of a substrate processing system according to this embodiment. FIG. 2 is a sectional view taken along line II-II of FIG. FIG. 3 is a top view showing a unit processing block. FIG. 4 is a side cross-sectional view of the heat treatment unit. FIG. 5 is a cross-sectional view of the heat treatment unit viewed from above. FIG. 6 is a perspective view showing a state in which the pads of the transfer arm are arranged in the vicinity of the notch of the cooling plate. FIG. 7 is a sectional view taken along line VII--VII in FIG. FIG. 8 is a block diagram showing the functional configuration of the controller. FIG. 9 is a block diagram showing the hardware configuration of the controller. FIG. 10 is a flow chart showing a substrate processing procedure. FIG. 11 is a schematic diagram for explaining the substrate processing procedure. FIG. 12 is a schematic diagram for explaining the substrate processing procedure. FIG. 13 is a schematic diagram for explaining the substrate processing procedure. FIG. 14 is a schematic diagram for explaining the substrate processing procedure. FIG. 15 is a flow chart showing the pad cooling procedure. FIG. 16 is a schematic diagram for explaining the pad cooling procedure. FIG. 17 is a schematic diagram showing a suction unit according to a modification. FIG. 18 is a schematic diagram showing a cooling section and a suction section according to a modification. FIG. 19 is a schematic diagram showing a transport arm according to a modification. FIG. 20 is a schematic diagram showing a cooling unit according to a modification.

An example of an embodiment according to the present disclosure will be described below in more detail with reference to the drawings. In the following description, the same reference numerals will be used for the same elements or elements having the same functions, and redundant description will be omitted.

[Substrate processing system]
As shown in FIG. 1, a substrate processing system 1 (substrate processing apparatus) includes a coating and developing apparatus 2 (substrate processing apparatus), an exposure apparatus 3, and a controller 10 (control section). The exposure device 3 performs exposure processing (pattern exposure) of a resist film formed on the surface of the wafer W (substrate). Specifically, an energy beam is selectively irradiated to the exposure target portion of the resist film (photosensitive film) by a method such as liquid immersion exposure. Energy rays include, for example, ArF excimer laser, KrF excimer laser, g-line, i-line, or extreme ultraviolet (EUV).

The coating and developing device 2 performs processing for forming a resist film on the surface of the wafer W before exposure processing by the exposure device 3, and performs development processing for the resist film after the exposure processing. The wafer W may have a disk shape, a circular shape with a part cut away, or a shape other than a circular shape such as a polygon. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the wafer W may be, for example, approximately 200 mm to 450 mm.

As shown in FIGS. 1 to 3, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. FIG. Carrier block 4, processing block 5 and interface block 6 are arranged horizontally.

The carrier block 4 has a carrier station 12 and a loading/unloading section 13, as shown in FIGS. A carrier station 12 supports a plurality of carriers 11 . Carrier 11 accommodates at least one wafer W in a sealed state. A side surface 11a of the carrier 11 is provided with an opening/closing door (not shown) for loading and unloading the wafer W. As shown in FIG. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading/unloading section 13 side.

The loading/unloading section 13 is located between the carrier station 12 and the processing block 5 . The loading/unloading section 13 has a plurality of opening/closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening/closing door of the carrier 11 faces the opening/closing door 13a. By simultaneously opening the opening/closing door 13a and the opening/closing door on the side surface 11a, the inside of the carrier 11 and the inside of the carrying-in/carrying-out section 13 communicate with each other. The loading/unloading section 13 incorporates a transport arm A1. The transfer arm A<b>1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5 , receives the wafer W from the processing block 5 and returns it into the carrier 11 .

Processing block 5 comprises modules 14-17, as shown in FIGS. These modules are arranged in order of module 17, module 14, module 15, and module 16 from the floor side.

Module 14 is configured to form an underlayer film on the surface of wafer W and is also referred to as a BCT module. As shown in FIGS. 2 and 3, the module 14 includes a plurality of coating units U1, a plurality of thermal processing units U2, and a transfer arm A2 for transferring wafers W to these units U1 and U2. Built-in. The unit U1 of the module 14 is configured to apply a coating liquid for forming a lower layer film onto the surface of the wafer W to form a coating film. The unit U2 of the module 14 is configured to heat the wafer W with, for example, a hot plate 113 (described later) and cool the heated wafer W with, for example, a cooling plate 121 (described later) to perform heat treatment. A specific example of the heat treatment performed in the module 14 is heat treatment for curing the coating film to form the underlying film. An example of the underlayer film is an antireflection (SiARC) film.

The module 15 is configured to form an intermediate film (hard mask) on the underlayer film, and is also called an HMCT module. The module 15, as shown in FIGS. 2 and 3, includes a plurality of coating units U1, a plurality of thermal processing units U2, and a transfer arm A3 for transferring wafers W to these units U1 and U2. Built-in. The unit U1 of the module 15 is configured to apply a coating liquid for forming an intermediate film to the surface of the wafer W to form a coating film. The unit U2 of the module 15 is configured to heat the wafer W with, for example, a hot plate 113 (described later) and cool the heated wafer W with, for example, a cooling plate 121 (described later) to perform heat treatment. A specific example of the heat treatment performed in the module 15 is heat treatment for curing the coating film to form an intermediate film. Examples of intermediate films include SOC (Spin On Carbon) films and amorphous carbon films.

The module 16 is configured to form a thermosetting and photosensitive resist film on the intermediate film, and is also called a COT module. As shown in FIGS. 2 and 3, the module 16 includes a plurality of coating units U1, a plurality of thermal processing units U2, and a transfer arm A4 for transferring wafers W to these units U1 and U2. Built-in. The unit U1 of the module 16 is configured to apply a treatment liquid (resist agent) for forming a resist film onto the intermediate film to form a coating film. The unit U2 of the module 16 is configured to heat the wafer W with, for example, a hot plate 113 (described later) and cool the heated wafer W with, for example, a cooling plate 121 (described later) to perform heat treatment. A specific example of the heat treatment performed in the module 16 is heat treatment (PAB: Pre Applied Bake) for curing the coating film to form a resist film.

The module 17 is configured to develop the exposed resist film, and is also called a DEV module. 2 and 3, the module 17 includes a plurality of developing units U1, a plurality of thermal processing units U2, a transfer arm A5 for transferring wafers W to these units U1 and U2, A transfer arm A6 for directly transferring wafers W between shelf units U10 and U11 (to be described later) without going through these units U1 and U2 is incorporated. A unit U1 of the module 17 is configured to partially remove the resist film to form a resist pattern. The unit U2 of the module 17 is configured to heat the wafer W with, for example, a hot plate 113 (described later) and cool the heated wafer W with, for example, a cooling plate 121 (described later) to perform heat treatment. Specific examples of the heat treatment performed in the module 17 include heat treatment before development (PEB: Post Exposure Bake), heat treatment after development (PB: Post Bake), and the like.

A shelf unit U10 is provided on the side of the carrier block 4 in the processing block 5, as shown in FIGS. The shelf unit U10 is provided so as to extend from the floor surface to the module 15, and is partitioned into a plurality of vertically aligned cells. A transfer arm A7 is provided near the shelf unit U10. The transfer arm A7 raises and lowers the wafer W between the cells of the shelf unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5 . The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the module 17, and is divided into a plurality of vertically aligned cells. A transfer arm A8 is provided near the shelf unit U11. The transfer arm A8 raises and lowers the wafer W between the cells of the shelf unit U11.

The interface block 6 incorporates a transfer arm A9 and is connected to the exposure device 3. As shown in FIG. The transfer arm A9 is configured to take out the wafer W from the shelf unit U11, transfer it to the exposure apparatus 3, receive the wafer W from the exposure apparatus 3, and return it to the shelf unit U11.

A controller 10 partially or wholly controls the substrate processing system 1 . Details of the controller 10 will be described later.

[Configuration of unit for heat treatment]
Next, the configuration of the unit U2 for heat treatment will be described in more detail with reference to FIGS. 4 to 9. FIG.

As shown in FIGS. 4 and 5, the unit U2 includes a wafer heating section 110 that heats the wafer W, a wafer cooling section 120 that cools the wafer W, and a transfer arm that generates an air flow. It has a cooling section 130 for cooling pads Am4 (described later) of A2 to A5, and a suction section 140 configured to suck the airflow generated by the cooling section 130. FIG. An end wall of a portion of the housing 100 corresponding to the wafer cooling section 120 is formed with a loading/unloading port 101 through which the transfer arms A2 to A5 can move in and out. The transfer arms A2 to A5 are configured to carry the wafer W into the housing 100 and to carry the wafer W out of the housing 100. As shown in FIG.

The transport arms A2 to A5, as shown in FIG. 5, include a base end portion Am1 and a pair of arm members Am2. The pair of arm members Am2 extends in an arc shape from the base end portion Am1 toward the distal end side. A plurality of support projections Am3 are provided on the inner peripheral edge of the arm member Am2. These support protrusions Am3 protrude inward from the inner peripheral edge of the arm member Am2. Support protrusions Am3 include pads Am4 configured to support the lower surface of wafer W, as shown in FIGS. The transfer arms A2 to A5 are driven by an arm drive portion Am5 provided at the base end portion Am1, and configured to be movable in the vertical direction, for example.

The pad Am4 is provided at the tip of the support projection Am3. With the wafer W placed on the transfer arms A2 to A5, the wafer W and the pad Am4 overlap each other. Thereby, the wafer W is supported by each pad Am4. The pad Am4 may be made of a material having high heat resistance and plasticity. The pad Am4 may be made of resin, for example. Examples of the resin include PEEK (polyetheretherketone) resin, PEK (polyetherketone) resin, PI (polyimide) resin, and the like. The heat resistance temperature of the pad Am4 may be, for example, 200° C. or higher, or 300° C. or higher. The “heat resistant temperature” here may be a temperature that exhibits short-term heat resistance (for example, Vicat softening temperature, deflection temperature under load, etc.).

Although not shown, the transport arms A1, A6 to A9 may also have the same structure as the transport arms A2 to A5. The pads Am4 of the transport arms A1, A6 to A9 may also have the same material and heat resistance as the pads Am4 of the transport arms A2 to A5.

The wafer heating section 110 has a lid section 111 and a hot plate accommodating section 112, as shown in FIGS. The lid portion 111 is positioned above the hot plate accommodating portion 112 . The controller 10 controls a drive source (not shown) so that the lid portion 111 can move up and down between an upper position separated from the hot plate accommodating portion 112 and a lower position placed on the hot plate accommodating portion 112 . configured to be movable. The lid portion 111 configures the processing chamber PR together with the hot plate accommodating portion 112 when in the lower position. At the center of the lid portion 111, an exhaust portion 111a for exhausting gas from the processing chamber PR is provided.

The hot plate accommodating portion 112 has a cylindrical shape and accommodates the hot plate 113 therein. An outer peripheral portion of the hot plate 113 is supported by a support member 114 . The outer circumference of the support member 114 is supported by a tubular support ring 115 . The upper surface of the support ring 115 is formed with a gas supply port 115a that opens upward. The gas supply port 115a is configured to blow inert gas into the processing chamber PR.

The hot plate 113 is a circular flat plate, as shown in FIG. The outer shape of the hot plate 113 is larger than the outer shape of the wafer W. As shown in FIG. The hot plate 113 is formed with three through holes HL extending through in the thickness direction thereof. At least three support pins PN for supporting the wafer W are provided on the upper surface of the hot plate 113, as shown in FIGS. The height of the support pin PN may be, for example, about 100 μm. A heater 116 configured to heat the hot plate 113 is disposed on the lower surface of the hot plate 113, as shown in FIG.

A lifting mechanism 119 is arranged below the hot plate 113 . The elevating mechanism 119 has a motor 119a arranged outside the housing 100 and three elevating pins 119b vertically moved by the motor 119a. Each lifting pin 119b is inserted into the corresponding through hole HL. When the tips of the lifting pins 119b protrude above the hot plate 113 and the support pins PN, the wafer W can be placed on the tips of the lifting pins 119b. The wafer W placed on the tip of the lifting pin 119b moves up and down as the lifting pin 119b moves up and down.

The wafer cooling section 120 is positioned adjacent to the wafer heating section 110, as shown in FIGS. The wafer cooling unit 120 has a cooling plate 121 configured to cool the wafer W placed thereon. As shown in FIG. 5, the cooling plate 121 is a flat plate having a substantially circular shape, and is configured so that the wafer W can be transferred. The outer shape of the cooling plate 121 is larger than the outer shape of the wafer W. As shown in FIG.

The cooling plate 121 is attached to a rail 123 extending toward the wafer heating section 110, as shown in FIG. The cooling plate 121 is driven by a moving mechanism 124 and can move horizontally on rails 123 . The cooling plate 121 moved to the wafer heating unit 110 side is positioned above the heating plate 113 . Therefore, the cooling plate 121 is movable between a position above the hot plate 113 and a position separated from the hot plate 113 . The cooling plate 121 may be made of metal with good thermal conductivity. Examples of the material of the cooling plate 121 include aluminum.

The cooling plate 121 is formed with two slits 125 and a plurality of notches 126, as shown in FIG. The slit 125 extends in the extending direction of the rail 123 from the end of the cooling plate 121 on the wafer heating unit 110 side to the vicinity of the central portion of the cooling plate 121 . The slit 125 prevents interference between the cooling plate 121 moved toward the wafer heating unit 110 and the lifting pin 119b protruding above the heating plate 113 . Therefore, the cooling plate 121 can transfer the wafer W to the hot plate 113 and receive the wafer W from the hot plate 113 .

Notch 126 is recessed toward the inside of cooling plate 121 . Each notch 126 is arranged at a position corresponding to the support projection Am3 when the transport arms A2 to A5 and the cooling plate 121 are vertically overlapped. The notch 126 is configured to accommodate the pad Am4 in the inner space SP. Therefore, when the transport arms A2 to A5 move up and down with respect to the cooling plate 121, the support projections Am3 (pads Am4) can pass through the corresponding notches 126. FIG. When the wafer W is placed on the cooling plate 121, the wafer W and the tip of the notch 126 overlap each other. Accordingly, the wafer W supported by the pad Am4 is placed on the cooling plate 121 by the transfer arms A2 to A5 moving downward with respect to the cooling plate 121. FIG. On the other hand, the wafer W placed on the cooling plate 121 is supported by the pad Am4 by moving the transfer arms A2 to A5 upward with respect to the cooling plate 121. FIG.

Inside the cooling plate 121, as shown in FIG. 4, a channel 122 is formed through which gas (for example, oxygen, nitrogen, etc.) can flow. A plurality of (for example, two) flow paths 122 may be formed in the cooling plate 121 . The plurality of flow paths 122 are arranged vertically, for example. Furthermore, a cooling member may be provided inside the cooling plate 121 . The cooling member is configured to adjust the temperature of the cooling plate 121, and may be composed of, for example, a Peltier element.

The cooling unit 130 is configured to generate an airflow around the pad Am4 of the transfer arms A2 to A5 to cool the pad Am4 (see FIGS. 6 and 7). For example, the cooling unit 130 may cool the pad Am4 below the heat resistant temperature of the pad Am4, may cool the pad Am4 below 50°C, or may cool the pad Am4 below room temperature (for example, about 23°C) and below 50°C. The pad Am4 may be cooled at The cooling section 130 has a spray section 131, a supply source 132, and a valve 133, as shown in FIGS. The blowing part 131 is configured to blow the cooled gas onto the pad Am4. The blowing part 131 is composed of, for example, the flow path 122 (the flow path 122 arranged above) and an outlet 134 formed so as to penetrate from the flow path 122 to the inner space SP of the notch 126. ing. The blowing part 131 blows off the gas toward the pad Am4.

The outlet 134 is formed in the inner wall surface 126s of the notch 126. As shown in FIG. For example, a plurality of outlets 134 are formed in the upper portion of the inner wall surface 126s. The outlet 134 slopes downward from the flow path 122 toward the inner space SP of the notch 126 . The supply source 132 accommodates gas for cooling the pad Am4 and pumps it to the blowing section 131 . The temperature of the gas contained in the supply source 132 may be 10° C. or more and room temperature (for example, about 23° C.) or less from the viewpoint of cooling efficiency or throughput. Alternatively, the lower limit value of the temperature of the gas contained in the supply source 132 may be a temperature lower than the room temperature by about 5° C. (for example, about 18° C.) from the viewpoint of suppressing condensation on the pad Am4. . The valve 133 is configured to open and close the flow path of gas from the supply source 132 to the spray section 131 . A valve 133 is provided in a conduit connecting the supply source 132 to the spraying section 131 .

The suction unit 140 is configured to suck the airflow generated around the pad Am4 by the cooling unit 130 (see FIGS. 6 and 7). The suction unit 140 has a suction chamber 141 and a pump 142, as shown in FIGS. The suction chamber 141 is composed of, for example, the channel 122 (the channel 122 arranged below) and a suction port 144 formed so as to penetrate from the channel 122 to the inner space SP of the notch 126. ing. The gas around the pad Am4 is sucked into the suction chamber 141 .

The suction port 144 is formed in the inner wall surface 126s of the notch 126. As shown in FIG. For example, a plurality of suction ports 144 are formed in the lower portion of the inner wall surface 126s. The suction port 144 may be inclined downward from the flow path 122 toward the inner space SP of the notch 126 similarly to the blowout port 134 . The pump 142 is configured to evacuate the gas in the suction chamber 141 . A pump 142 is provided in a pipeline connected to the suction chamber 141 .

[Controller configuration]
As shown in FIG. 8, the controller 10 includes, as functional modules, a reading unit M1, a storage unit M2, a transfer control unit M3, a wafer cooling control unit M4, a wafer heating control unit M5, and a pad cooling control unit. M6. These functional modules are simply the functions of the controller 10 divided into a plurality of modules for convenience, and do not necessarily mean that the hardware constituting the controller 10 is divided into such modules. Each functional module is not limited to being realized by executing a program, but is realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates this. may

A reading unit M1 reads a program from a computer-readable recording medium RM. The recording medium RM records a program for operating each part of the substrate processing system 1 . The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk.

The storage unit M2 stores various data. Data stored in the storage unit M2 includes, for example, a program read from the recording medium RM by the reading unit M1.

The transfer control unit M3 controls the arm drive unit Am5 so that the transfer arms A2 to A5 carry the wafer W into the housing 100, and the transfer arms A2 to A5 carry the wafer W out of the housing 100. and controlling the arm drive part Am5 to carry out.

The wafer cooling controller M4 controls the arm driving section Am5 so that the wafer W supported by the pads Am4 of the transfer arms A2 to A5 is placed on the cooling plate 121. FIG. Specifically, the wafer cooling control unit M4 controls the arm driving unit Am5 so as to lower the cooling plate 121 downward. Further, the wafer cooling controller M4 controls the moving mechanism 124 so that the wafer W placed on the lifting pins 119b in the wafer heating part 110 is placed on the cooling plate 121. and controlling the elevating mechanism 119 so that the wafer W placed thereon is placed on the elevating pins 119 b in the wafer heating unit 110 . The wafer cooling control unit M4 controls the moving mechanism 124 to move the cooling plate 121 into the wafer heating unit 110, and controls the moving mechanism 124 to move the cooling plate 121 away from the wafer heating unit 110. may be further performed.

The wafer heating controller M5 controls the lifting mechanism 119 (motor 119a) so that the wafer W placed on the lifting pins 119b is supported on the support pins PN on the upper surface of the hot plate 113, and controls the supporting pins 119b. and controlling the lifting mechanism 119 (motor 119a) so that the wafer W supported on the pins PN is placed on the lifting pins 119b. Further, the wafer heating controller M5 may control the heater 116 to heat the hot plate 113 .

The pad cooling control unit M6 controls the cooling unit 130 so that the gas is blown out from the outlet 134 toward the pad Am4 when the pad Am4 is in the inner space SP of the notch 126. For example, the pad cooling controller M6 controls the pad Am4 to be inside the notch 126 while the transfer arms A2 to A5 are ascending to place the wafer W placed on the cooling plate 121 on the pad Am4. The cooling part 130 is controlled so that the gas is blown out from the blow-out port 134 toward the pad Am4 while passing through the space SP. The pad cooling control unit M6 further controls the suction unit 140 to suck the gas formed around the pad Am4 from the suction port 144 when the pad Am4 is in the inner space SP of the notch 126. You may

The hardware of the controller 10 is composed of, for example, one or more control computers. The controller 10 has, for example, a circuit 10A shown in FIG. 9 as a hardware configuration. Circuit 10A may be comprised of electrical circuitry. Specifically, the circuit 10A has a processor 10B, a memory 10C (storage section), a storage 10D (storage section), and an input/output port 10E. The processor 10B cooperates with at least one of the memory 10C and the storage 10D to execute a program and input/output signals via the input/output port 10E, thereby configuring each functional module described above. The input/output port 10E performs signal input/output between the processor 10B, the memory 10C, the storage 10D, and various devices of the substrate processing system 1. FIG.

Although the substrate processing system 1 includes one controller 10 in this embodiment, it may include a controller group (control section) including a plurality of controllers 10 . When the substrate processing system 1 includes a controller group, each of the above functional modules may be implemented by one controller 10, or may be implemented by a combination of two or more controllers 10. . When the controller 10 is composed of a plurality of computers (circuits 10A), each of the above functional modules may be realized by one computer (circuits 10A), or may be realized by two or more computers (circuits 10A). ) may be realized by a combination of The controller 10 may have multiple processors 10B. In this case, each of the above functional modules may be realized by one processor 10B, or may be realized by a combination of two or more processors 10B.

[Substrate processing method]
Next, as an example of the substrate processing method, a substrate processing procedure executed by the controller 10 will be described with reference to FIGS. 10 to 16. FIG. As shown in FIG. 10, the controller 10 first executes step S01. Step S01 is executed, for example, while the surface of wafer W is coated with the coating liquid in coating unit U1. In step S01, the transfer controller M3 controls the transfer arms A2 to A5 so as to load the wafer W into the housing 100 (see FIG. 11). For example, the transfer controller M3 controls the transfer arms A2 to A5 so that the wafer W is transferred out of the coating unit U1 and transferred into the housing 100 of the heat treatment unit U2.

Next, the controller 10 executes step S02. In step S02, the wafer cooling control section M4 controls the arm driving section Am5 so that the wafer W supported by the pads Am4 of the transfer arms A2 to A5 is placed on the cooling plate 121 (see FIG. 12).

Next, the controller 10 executes step S03. In step S03, the wafer cooling control unit M4 controls the moving mechanism 124 and the lifting mechanism 119 so that the wafer W placed on the cooling plate 121 is placed on the lifting pins 119b in the wafer heating unit 110 ( See Figure 13). Specifically, the wafer cooling control unit M4 moves the cooling plate 121 horizontally to enter the wafer heating unit 110 so that the cooling plate 121 is positioned at the first position above the heating plate 113. to control the moving mechanism 124 . With the cooling plate 121 placed at the first position, the wafer cooling controller M4 raises the elevating pins 119b so that the wafer W placed on the cooling plate 121 is placed on the elevating pins 119b. The lifting mechanism 119 is controlled so that After that, the wafer cooling control unit M4 moves the cooling plate 121 horizontally to withdraw from the wafer heating unit 110 so that the cooling plate 121 is arranged at the second position facing the transfer arms A2 to A5 in the vertical direction. to control the moving mechanism 124 .

Next, the controller 10 executes step S04. In step S04, the lifting pins 119b are lowered so that the wafer W placed on the lifting pins 119b is supported on the support pins PN on the upper surface of the hot plate 113. (motor 119a) (see FIG. 14). The wafer heating controller M5 may switch the heater 116 to the ON state to heat the hot plate 113 before the wafer W is supported on the support pins PN.

Next, the controller 10 executes step S05. In step S05, the wafer heating controller M5 causes the heater 116 to continue heating the hot plate 113 so as to heat the wafer W for a predetermined time.

Next, the controller 10 executes step S06. In step S06, the lifting pins 119b are lifted, and the wafer heating controller M5 controls the lifting mechanism 119 (motor 119a) so that the wafer W supported on the support pins PN is placed on the lifting pins 119b. do. After that, the wafer heating controller M5 may switch the heater 116 to the OFF state to stop the heating of the hot plate 113 .

Next, the controller 10 executes step S07. In step S07, the wafer cooling controller M4 controls the moving mechanism 124 and the lifting mechanism 119 so that the wafer W placed on the lifting pins 119b in the wafer heating part 110 is placed on the cooling plate 121. FIG. Specifically, the wafer cooling control unit M4 horizontally moves the cooling plate 121 into the wafer heating unit 110 and controls the moving mechanism 124 so that the cooling plate 121 is arranged at the first position. With the cooling plate 121 placed at the first position, the wafer cooling controller M4 lowers the lifting pins 119b so that the wafer W placed on the lifting pins 119b is placed on the cooling plate 121. The lifting mechanism 119 is controlled so that After that, the wafer cooling control unit M4 horizontally moves the cooling plate 121 to retreat from the wafer heating unit 110, and controls the moving mechanism 124 so that the cooling plate 121 is arranged at the second position.

Next, the controller 10 executes step S08. In step S08, when the pad Am4 is in the inner space SP of the notch 126, the pad cooling control unit M6 controls the cooling unit 130 so as to generate an airflow around the pad Am4 and cool the pad Am4. . More specific processing contents will be described later.

Next, the controller 10 executes step S09. In step S09, the wafer cooling control section M4 controls the arm driving section Am5 so that the wafer W placed on the cooling plate 121 is supported by the pads Am4 of the transfer arms A2 to A5. After that, the transfer control unit M3 controls the arm driving unit Am5 so that the transfer arms A2 to A5 carry out the wafer W out of the housing 100. FIG. As described above, the controller 10 completes the substrate processing.

[Pad cooling procedure]
Next, specific processing contents of step S08 will be described. As shown in FIG. 15, the controller 10 first executes step S11. In step S11, the pad cooling control unit M6 controls the cooling unit 130 so that the air is blown out from the outlet 134 toward the pad Am4 when the pad Am4 is in the inner space SP of the notch 126. Specifically, the transfer arms A2 to A5 are lifted (see FIG. 16A), and when the pad Am4 reaches the inner space SP of the notch 126, the transfer arms A2 to A5 stop rising. Then, the pad cooling control section M6 controls the arm driving section Am5. After that, the pad cooling control unit M6 controls the cooling unit 130 to open the valve 133 and start blowing the gas from the blow-out port 134 . As a result, an airflow is formed around the pad Am4 (see FIG. 16(b)).

Further, the pad cooling control unit M6 controls the suction unit 140 to suck the gas formed around the pad Am4 from the suction port 144 when the pad Am4 is in the inner space SP of the notch 126. Specifically, the pad cooling control unit M6 controls the suction unit 140 to start sucking gas from the suction port 144 by vacuuming with the pump 142 . As a result, the airflow formed around the pad Am4 is sucked (see FIG. 16(b)).

Next, the controller 10 executes step S12. In step S12, the pad cooling control unit M6 causes the cooling unit 130 to form the airflow and the suction unit 140 to continue sucking the airflow for a predetermined time. The predetermined time may be, for example, 1 second or more and 10 seconds or less, 1 second or more and 5 seconds or less, or 1 second or more and 2 seconds or less.

Next, the controller 10 executes step S13. In step S<b>13 , the pad cooling control unit M<b>6 stops the formation of gas by the cooling unit 130 and the suction of the airflow by the suction unit 140 . Specifically, the pad cooling control unit M6 controls the cooling unit 130 so as to close the valve 133 and stop blowing the gas from the blowing port 134 . Similarly, the pad cooling control unit M6 controls the suction unit 140 so as to stop vacuuming by the pump 142 and stop the suction of gas from the suction port 144 . After that, the pad cooling control section M6 controls the arm driving section Am5 so as to restart the lifting of the transfer arms A2 to A5 (see FIG. 16(c)). As a result, the wafer W placed on the cooling plate 121 is supported by the pads Am4 of the transfer arms A2 to A5. With the above, the controller 10 completes the pad cooling process.

[Action]
In the present embodiment as described above, the pad Am4 is cooled by the cooling unit 130 generating an airflow around the pad Am4. Therefore, the transfer arms A2 to A5 can support the lower surface of the wafer W by the pad Am4 while the temperature of the pad Am4 is sufficiently lowered. Therefore, the influence of the heat of the transfer arms A2 to A5 on the wafer W can be suppressed.

In this embodiment, the cooling unit 130 may include a blowing unit 131 configured to blow gas onto the pad Am4. In this case, the airflow generated by the cooling unit 130 can easily reach the pad Am4 by the blowing unit 131 blowing the gas onto the pad Am4. Therefore, the pad Am4 can be efficiently cooled.

In this embodiment, a cooling plate 121 configured to cool the wafer W is further provided, the cooling plate 121 includes a notch 126 configured to accommodate the pad Am4 in the inner space SP, and the cooling unit 130 , and an outlet 134 formed in the inner wall surface 126s of the notch 126 for blowing out the gas toward the pad Am4. In this embodiment, the pad Am4 passes through the notch 126 of the cooling plate 121 on which the wafer W is placed while the wafer W is transferred from the cooling plate 121 to the transfer arms A2 to A5. Therefore, when the pad Am4 is in the vicinity of the notch 126, by blowing out the gas toward the pad Am4 from the outlet 134 of the inner wall surface 126s of the notch 126, the wafer W between the cooling plate 121 and the transfer arms A2 to A5 is removed. The wafer W can be efficiently cooled by taking advantage of the transfer.

The present embodiment may further include a controller 10 that controls the cooling unit 130 so as to blow off the gas from the outlet 134 toward the pad Am4 when the pad Am4 is in the inner space SP. In this case, the pad Am4 is cooled in the inner space SP of the notch 126 of the cooling plate 121, so that the cooling unit 130 is prevented from generating excessive airflow. Therefore, when the pad Am4 is cooled by the cooling unit 130, influence on other mechanisms is suppressed. Further, since the wafer W is supported by the cooled pad Am4, the influence of the heat of the pad Am4 on the wafer W can be suppressed more reliably.

In this embodiment, a suction unit 140 configured to suck the airflow generated around the pad by the cooling unit 130 may be further provided. In this case, since the airflow is sucked by the suction unit 140, it is possible to suppress the airflow generated by the cooling unit 130 from spreading widely.

In the present embodiment, the cooling unit 130 may be configured to cool the pad Am4 to room temperature or higher and 50° C. or lower. By cooling the pad Am4 to 50° C. or less by the cooling unit 130, it is possible to sufficiently suppress the influence on the wafer W when the wafer W is held. With a configuration that cools the pad Am4 to room temperature or higher (for example, about room temperature), the cooling unit 130 can use gas at about room temperature that can be derived from existing equipment (for example, factory power, etc.) for cooling at that temperature. Therefore, complication of the device configuration can be suppressed.

[Modification]
It should be considered that the embodiments and modifications disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted or modified in various ways without departing from the scope and spirit of the appended claims.

For example, in the above embodiment, the cooling unit 130 is configured to generate an airflow around the pad Am4 before supporting the heated wafer W to cool the pad Am4. The timing of cooling the pad Am4 may be changed as appropriate. For example, after the pad Am4 supports the heated wafer W (after the transfer arms A2 to A5 including the pad Am4 deliver the heated wafer W to another mechanism), the cooling unit 130 removes the pad Am4. It may be configured for cooling. In this case, the cooled pad Am4 supports the wafer W before being heated. It is possible to more effectively suppress the influence of heat from the pad Am4 on the wafer W before processing).

The cooling unit 130 may be configured by an arm driving unit Am5 configured to move the transport arms A2-A5. In this case, the arm driving section Am5 is configured to cool the pad Am4 with an airflow generated around the pad Am4 by the movement of the transfer arms A2 to A5. The arm driving section Am5 may be configured to vertically move the transport arms A2 to A5, horizontally move them, or rotate them. In this case, the cooling unit 130 generates an airflow by moving the transfer arms A2 to A5 by the arm driving unit Am5, so that the pad Am4 can be cooled with a simple configuration.

As shown in FIG. 17, a suction flow path Am6 may be formed inside the transport arms A2 to A5, and the transport arms A2 to A5 may have a vacuum pad Am4. In this case, as shown in FIG. 18, the suction chamber 141 of the suction unit 140 is composed of a suction channel Am6 and a suction port Am7 formed to penetrate from the suction channel Am6 to the upper surface of the pad Am4. may have been At this time, the channel 122 and the suction port 144 on the lower side of the cooling plate 121 may be omitted.

The substrate processing system 1 may further include a transfer section 150 configured to transfer the dummy wafer Wd to the transfer arms A2 to A5 so that the dummy wafer Wd (dummy substrate) is supported by the pad Am4. The transfer unit 150 may be configured by, for example, the arm driving unit Am5 (see FIG. 19), or may be configured by other mechanisms (eg, other transport arms such as transport arms A1, A6 to A9). good. In this case, since the heat of the pad is conducted to the dummy wafer Wd, the pad can be cooled more efficiently. At this time, the temperature of the dummy wafer Wd may be, for example, about room temperature.

The cooling unit 130 may be configured to generate an airflow around the pad Am4 of the transfer arms A1, A6 to A9 to cool the pad Am4. For example, as shown in FIG. 20, the blowing section 131 may be composed of a nozzle 136 that blows gas onto the pads Am4 of the transfer arms A7 and A8.

The cooling section 130 may be provided in the shelf units U10 and U11. The shelf units U10 and U11 have, for example, a mounting portion 137 on which the wafer W is mounted and a cooling plate 121. As shown in FIG. In this case, when the pad Am4 is in the inner space SP of the notch 126 provided in the cooling plates 121 of the shelf units U10 and U11, the controller 10 causes the air to flow from the outlet formed in the notch 126 to the pad. The cooling unit 130 may be controlled to blow air toward Am4, and when the wafer W is mounted on the mounting unit 137, an airflow is generated around the pad Am4 to cool the pad Am4. The cooling unit 130 may be controlled as follows.

The cooling section 130 may be provided on the transfer arms A1 to A9. For example, a flow path (not shown) for cooling the pad Am4 may be formed inside the transport arms A1 to A9. A blowout port (not shown) capable of blowing out the gas toward the may be formed.

[Example]
By the way, for example, after the substrate is heat-treated, the substrate is transported by the transport arm before the substrate is sufficiently cooled. pads) may accumulate heat. In such a case, it is conceivable that the heat of the transfer arm is transferred to the next substrate that is transferred by the transfer arm. At this time, the portion of the substrate that comes into contact with the pads of the transfer arm or the like tends to be hotter than the other portions. Therefore, a temperature difference occurs in the substrate, and there is a possibility that, for example, it becomes difficult to maintain the uniformity of the film thickness of the substrate after the substrate is coated.

On the other hand, for example, it is conceivable to lengthen the cooling time of the substrate after the heat treatment, or wait the transfer arm until the temperature of the heat-accumulated pad drops sufficiently. be.

Accordingly, a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium capable of suppressing the influence of the heat of the transfer arm on the substrate are exemplified below.

Example 1. A substrate processing apparatus (1) according to one example of the present disclosure includes transfer arms (A2 to A5) including pads (Am4) configured to support the lower surface of a substrate (W), and pads (Am4). a cooling unit (130) configured to generate airflow around to cool the pad (Am4). According to this device (1), the pad (Am4) is cooled by the cooling section (130) generating an airflow around the pad (Am4). Therefore, the transfer arms (A2 to A5) can support the lower surface of the substrate (W) by the pads (Am4) while the temperature of the pads (Am4) is sufficiently lowered. Therefore, it is possible to suppress the influence of the heat of the transport arms (A2 to A5) on the substrate (W).

Example 2. In the apparatus (1) according to Example 1, the cooling section (130) may include a blowing section (131) configured to blow gas onto the pad (Am4). In this case, the airflow generated by the cooling section (130) can easily reach the pad (Am4) by blowing the gas onto the pad (Am4) from the blowing section (131). Therefore, the pad (Am4) can be efficiently cooled.

Example 3. The apparatus (1) according to Example 2, further comprising a cooling plate (121) configured to cool the substrate (W), the cooling plate (121) accommodating the pad (Am4) in the inner space (SP) The cooling part (130) is a blowout port (134) formed in the inner wall surface (126s) of the notch (126) and directed to the pad (Am4). An outlet (134) for blowing gas may be included. In the process of transferring the substrate (W) from the cooling plate (121) to the transfer arms (A2 to A5), the notch (126) of the cooling plate (121) on which the substrate (W) is placed is attached to the pad (Am4). passes through. Therefore, when the pad Am4 is in the vicinity of the notch 126, by blowing out the gas toward the pad (Am4) from the outlet (134) of the inner wall surface (126s) of the notch (126), the cooling plate (121) and the The transfer of the substrate (W) between the transfer arms (A2 to A5) can be utilized to efficiently cool the substrate (W).

Example 4. In the device (1) according to Example 3, when the pad (Am4) is in the inner space (SP), the cooling part (130) is controlled so that the gas is blown out from the outlet (134) toward the pad (Am4) A control unit (10) may be further provided. In this case, since the pad (Am4) is cooled in the inner space (SP) of the notch (126) of the cooling plate (121), the cooling section (130) is prevented from generating excessive airflow. Therefore, when the pad (Am4) is cooled by the cooling section (130), influence on other mechanisms is suppressed. Further, since the substrate (W) is supported by the cooled pad (Am4), it is possible to more reliably suppress the influence of the heat of the pad (Am4) on the substrate (W).

Example 5. The device (1) of any one of Examples 1 to 4, further comprising a suction unit (140) configured to suck airflow generated around the pad (Am4) by the cooling unit (130) good. In this case, since the airflow is sucked by the suction section (140), it is possible to suppress the airflow generated by the cooling section (130) from spreading over a wide area.

Example 6. In the apparatus (1) of any one of Examples 1 to 5, the dummy substrate (Wd) is configured to be transferred to the transfer arms (A2 to A5) so that the dummy substrate (Wd) is supported by the pads (Am4). It may further comprise a delivery unit (150). In this case, since the heat of the pad (Am4) is conducted to the dummy substrate (Wd), the pad (Am4) can be cooled more efficiently.

Example 7. In the apparatus (1) of any of Examples 1-6, the cooling unit (130) is an arm drive unit (Am5) configured to move the transport arms (A2-A5), wherein the transport arms (A2 ˜A5) may include an arm drive section (Am5) configured to cool the pad (Am4) with an airflow generated around the pad (Am4) by the movement of .about.A5). In this case, the cooling section (130) generates an airflow by moving the transfer arms (A2 to A5) by the arm driving section (Am5), so that the pad (Am4) can be cooled with a simple configuration.

Example 8. In the apparatus (1) of any of Examples 1-7, the cooling section (130) may be configured to cool the pad (Am4) to above room temperature and below 50°C. By cooling the pad (Am4) to 50° C. or less by the cooling part (130), it is possible to sufficiently suppress the influence on the substrate (W) when the substrate (W) is held. With a configuration that cools the pad (Am4) to room temperature or higher (for example, about room temperature), the cooling unit (130) is capable of supplying gas at about room temperature that can be led from existing equipment (for example, factory power, etc.) at the same temperature. Since it can be used for cooling, it is possible to suppress the complication of the device configuration.

Example 9. A substrate processing method according to another example of the present disclosure provides a Generating an airflow to cool the pad (Am4). According to this method, the same effect as the apparatus (1) of Example 1 can be obtained.

Example 10. In the method according to Example 9, cooling the pad (Am4) may comprise blowing gas onto the pad (Am4). In this case, the same effect as the device (1) of Example 2 can be obtained.

Example 11. In the method according to Example 10, cooling the pad (Am4) comprises a notch (126) in a cooling plate (121) configured to cool the substrate (W), the pad (Am4) being By blowing out the gas toward the pad (Am4) from a blowout port (134) formed in the inner wall surface (126s) of the notch (126) configured to be accommodated in the inner space (SP), the gas is blown into the pad (Am4 ). In this case, the same effect as the device (1) of Example 3 can be obtained.

Example 12. In the method according to Example 11, cooling the pad (Am4) includes blowing gas from the outlet (134) toward the pad (Am4) when the pad (Am4) is in the inner space (SP). may contain. In this case, the same effect as the device (1) of Example 4 can be obtained.

Example 13. In the method of any of Examples 9-12, cooling the pad (Am4) may further comprise sucking an airflow formed around the pad (Am4). In this case, the same effect as the device (1) of Example 5 can be obtained.

Example 14. The method of any of Examples 9-13, further comprising transferring the dummy substrate (Wd) to the transfer arms (A2-A5) such that the dummy substrate (Wd) is supported by the pads (Am4). good too. In this case, effects similar to those of the device (1) of Example 6 are obtained.

Example 15. In any of the methods of Examples 9-14, cooling the pad (Am4) includes cooling the pad (Am4) with airflow generated around the pad (Am4) by movement of the transfer arms (A2-A5) may include In this case, effects similar to those of the device (1) of Example 7 are obtained.

Example 16. In the method of any of Examples 9-15, cooling the pad (Am4) may include bringing the temperature of the pad (Am4) above room temperature and below 50°C. In this case, the same effect as the device (1) of Example 8 can be obtained.

Example 17. A computer-readable recording medium (RM) according to another example of the present disclosure records a program for causing the substrate processing apparatus (1) to execute the method described in any one of Examples 9-16. In this case, it has the same effect as any of the methods of Examples 9-16. As used herein, computer-readable recording media (RM) include non-transitory computer recording media (e.g., various primary or secondary storage devices), computer recording medium) (eg, a data signal that can be provided over a network).

DESCRIPTION OF SYMBOLS 1... Substrate processing system (substrate processing apparatus), 2... Coating and developing apparatus (substrate processing apparatus), 10... Controller (control part), 121... Cooling plate, 126... Notch, 126s... Inner wall surface, 130... Cooling part, Reference numerals 131: Blowing section 134: Blowout port 140: Suction section 150: Transfer section A1 to A9: Transfer arm Am4: Pad Am5: Arm driving section RM: Recording medium SP: Inner space W: Wafer (substrate), Wd: dummy wafer (dummy substrate).

Claims (13)

a transfer arm including a pad configured to support the underside of the substrate;
a cooling unit configured to generate an airflow around the pad to cool the pad ;
a cooling plate configured to cool the substrate ;
The cooling plate includes a notch configured to accommodate the pad in an inner space,
The cooling unit includes a blowing unit configured to blow gas onto the pad,
The substrate processing apparatus , wherein the blowing part is a blowout opening formed in an inner wall surface of the notch, the blowout opening blowing gas toward the pad . 2. The device according to claim 1 , further comprising a control section that controls the cooling section to blow gas toward the pad from the outlet when the pad is in the inner space. 3. Apparatus according to claim 1 or 2 , further comprising a suction section configured to suction airflow generated around the pad by the cooling section. 4. The apparatus according to any one of claims 1 to 3 , further comprising a transfer section configured to transfer said dummy substrate to said transfer arm so that said dummy substrate is supported by said pads. The cooling unit is an arm driving unit configured to move the transfer arm, and is configured to cool the pad with an airflow generated around the pad by the movement of the transfer arm. A device according to any one of claims 1 to 4 , comprising a part. The apparatus according to any one of claims 1 to 5 , wherein the cooling unit is configured to cool the pad to room temperature or higher and 50°C or lower. generating an airflow around a pad included by a transfer arm configured to support a lower surface of a substrate to cool the pad ;
Cooling the pad is a notch included in a cooling plate configured to cool the substrate, the inner wall surface of the notch configured to accommodate the pad in an inner space. A substrate processing method , comprising blowing gas onto the pad by blowing the gas toward the pad from an air outlet . 8. The method of claim 7 , wherein cooling the pad includes blowing gas from the outlet toward the pad when the pad is in the interior space. 9. The method of claim 7 or 8 , wherein cooling the pad further comprises sucking an airflow formed around the pad. 10. The method according to any one of claims 7 to 9 , further comprising transferring said dummy substrate to said transfer arm such that said dummy substrate is supported by said pads. The method according to any one of claims 7 to 10 , wherein cooling the pad includes cooling the pad with airflow generated around the pad by movement of the transfer arm. The method according to any one of claims 7 to 11 , wherein cooling the pad includes setting the temperature of the pad to room temperature or higher and 50°C or lower. A computer-readable recording medium recording a program for causing a substrate processing apparatus to execute the method according to any one of claims 7 to 12 .

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