JP2000091218A - Heating method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to reduce a space of and a load on a carrying apparatus, and improve the throughput in a heating step, in which a substrate is treated by heat in two steps at different temperatures. SOLUTION: An upper heating panel 71 for treating a wafer (W) by heat at 90 deg.C, a lower heating panel 72 for treating the wafer (W) by heat at 270 deg.C an elevator pin 80 capable of moving up and down the wafer (W) in a supported state, are provided in a main body 70. The wafer (W) is put near to the upper heating panel 71 by moving up the elevator pin 80 and treated once by heat at 90 deg.C. After that the elevator pin 80 is moved down, and the wafer (W) supported by a proximity pin 81 of the lower heating panel 72 is treated by heat at 270 deg.C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for heating a substrate.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process,
For example, a photolithography process is performed to form a resist film on a surface of a semiconductor wafer (hereinafter, referred to as “wafer”) or the like. This photolithography process
A resist coating step of applying a resist solution to a wafer and processing the same, an exposure processing step of exposing the wafer after the resist coating, a heating processing step of heating the wafer, and a development processing step of developing the exposed wafer And other various processing steps.

[0003] The fine processing technology of the wafer in the photolithography process is progressing day by day, and a photolithography process using a chemically amplified resist is widely used today. A step of forming an antireflection film on a wafer before and after the resist coating step is also employed.

In particular, in a BARC (Bottom Anti-Reflective Coating) process, an anti-reflection film having high light absorption is formed under a resist film, and the anti-reflection film stands by interference between incident light and reflected light during exposure processing. Try to suppress the wave effect. However, in order to bring out the properties of the anti-reflection film, the anti-reflection film must be cured, that is, heat-treated at a high temperature of, for example, 230 ° C. If the heat treatment is insufficient, the anti-reflection film melts out. In some cases, a so-called mixing layer having characteristics different from those of the antireflection film is generated by the solvent. In order to prevent the generation of such a mixing layer, an anti-reflection film must be formed from the beginning.
If the heat treatment is performed at a high temperature of 30 ° C., the properties of the antireflection film may not be sufficiently brought out due to foaming of the solvent in the antireflection film, or the antireflection film may be cracked.

Therefore, conventionally, in order to prevent the generation of the mixing layer and sufficiently bring out the characteristics of the antireflection film,
The heat treatment was performed on the antireflection film in two stages. That is, the wafer on which the antireflection film is formed is, for example, 9
After the solvent in the resist film is evaporated and removed by heating once at a low temperature of 0 ° C., the characteristics of the anti-reflection film are sufficiently brought out by finally heating the wafer at a high temperature of, for example, 230 ° C. ing. Conventionally, in order to perform such a two-stage heat treatment, a low-temperature-side heating device that heats the wafer at, for example, 90 ° C., and two wafers are used.
A high-temperature side heating device for performing heat treatment at 30 ° C. was used. The transfer of wafers to and from these heating devices is performed by transfer devices, and the transfer of wafers to and from each of the heating devices is performed by tweezers provided in the transfer device.

[0006]

However, using a heating device on the low temperature side and a heating device on the high temperature side in this way has a problem because more space is required.
In order to heat the antireflection film in two stages, the wafer is first transferred to a low-temperature heating device and then loaded into the heating device. Next, after the wafer that has been subjected to the heat treatment in the low-temperature side heating device is carried out with tweezers, the wafer is transferred to the high-temperature side heating device. After that, the wafer is carried into the high-temperature side heating device, and the heated wafer is carried out by the high-temperature side heating device. As described above, the conventional two-step heat treatment of the anti-reflection film requires a lot of time spent for transporting, loading and unloading the wafer, so that the transport device is necessarily transported to another device. ， Unable to carry in and out. On the other hand, as described above, the time required for transferring wafers between the heating devices and for carrying the wafer in and out of the heating device twice, and consequently, the time required for one wafer as a whole increases. Thus, the throughput cannot be improved.

[0007] The present invention has been made in view of the above points, and a new heat treatment method and a new heat treatment apparatus capable of reducing the arrangement space, reducing the load on the transfer device, and improving the throughput. It is intended to provide.

[0008]

According to the first aspect of the present invention, there is provided a method for heating a substrate in two stages at different processing temperatures, the method comprising the steps of: A first step of bringing the substrate closer to and heating the substrate;
Then, a second step of heating the substrate by bringing the substrate closer to a high-temperature-side heating plate located above the substrate is provided.

In the heat treatment method according to the first aspect, first, the substrate approaching the lower heating plate is once heated at a low temperature, and then the substrate is brought closer to the upper heating plate to raise the temperature of the substrate to a high temperature. To be heated. Therefore, two stages of heat treatment at different treatment temperatures can be performed on the substrate in one heat treatment apparatus.

According to the second aspect, in the method of heating a substrate in two stages at different processing temperatures, a first step of heating the substrate by bringing the substrate closer to a low-temperature side heating plate located above the substrate, and thereafter, And a second step of heating the substrate by bringing the substrate closer to a high-temperature-side heating plate located below the substrate.

In the heat treatment method according to the present invention, first, a substrate approaching the upper-side low-temperature side heating plate is once heated, and then the substrate is heated to the lower-side high-temperature side heating plate. This time, it is heated at a high temperature. Therefore, the substrate can be heated in two stages in one heat treatment apparatus as in the first aspect. Further, the low-temperature side heating plate located above the substrate is heated by the high-temperature side heating plate located below the substrate. Therefore, the power consumed by the low-temperature side heating plate can be saved as compared with the first aspect.

According to a third aspect of the present invention, there is provided a heat treatment apparatus including an elevating mechanism capable of elevating and lowering a substrate, and a heating plate for heating the substrate to a predetermined temperature, wherein the heating plate is located above the substrate. A heat treatment apparatus is provided, comprising an upper heating plate and a lower heating plate located below the substrate, wherein the upper heating plate is set at a higher temperature than the lower heating plate.

According to a third aspect of the present invention, the substrate is first lowered at a low temperature by lowering the substrate by an elevating mechanism so as to approach the lower heating plate, and then the substrate is moved up and down by the elevating mechanism. The substrate can be heated at a high temperature by moving the substrate closer to the upper heating plate.
As described above, by moving the substrate up and down by the elevating mechanism, the heating of the substrate by the lower heating plate and the heating of the substrate by the upper heating plate can be performed separately in one heat treatment apparatus. Therefore, unlike the related art, two heat treatment devices having different processing temperatures are not required, and the arrangement space for the heat treatment devices can be reduced. Since the substrate can be heated in two stages in one heat treatment device,
It is not necessary for the transfer device to transfer the substrate to a separate heat treatment device as in the related art. Further, the number of times the transfer device carries the substrate in and out of the heat treatment device by one time is smaller than that in the related art. Therefore, the load on the transfer device can be reduced because the time required to transfer, load and unload the substrate by the transfer device can be reduced, and the transfer device can be engaged in transferring the substrate by another device. Become. On the other hand, by reducing the time required for transporting and carrying in and out the substrates, the time required for each substrate is reduced accordingly. Therefore, it is possible to improve the throughput.

According to a fourth aspect of the present invention, there is provided a heat treatment apparatus including an elevating mechanism capable of elevating a substrate and a heating plate for heating the substrate to a predetermined temperature, wherein the heating plate is located above the substrate. There is provided a heat treatment apparatus comprising an upper heating plate and a lower heating plate located below the substrate, wherein the upper heating plate is set at a lower temperature than the lower heating plate.

According to a fourth aspect of the present invention, the substrate approaching the upper heating plate is heated at a low temperature by an elevating mechanism, and then the substrate approaching the lower heating plate is heated at a high temperature by an elevating mechanism. Can be processed. Therefore, similarly to the third aspect, the substrate can be heat-treated in two stages in one heat treatment apparatus. Further, the lower-side upper heating plate located above the substrate is warmed by the higher-side lower heating plate located below the substrate. Therefore, the power consumed by the upper heating plate can be saved as compared with the third aspect.

[0016]

Embodiments of the present invention will be described below. 1 to 3 show the appearance of a coating and developing apparatus having a hard baking apparatus according to the present embodiment. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

As shown in FIG.
For example, a cassette station 2 for loading and unloading 25 wafers W from the outside to the coating and developing processing apparatus 1 in a cassette unit, and loading and unloading wafers W to and from the cassette C, and a predetermined process for the wafer W A processing station 3 in which various single-wafer processing apparatuses are arranged;
It has a configuration in which an interface unit 4 for receiving and transferring a wafer W between the processing station 3 and an exposure apparatus (not shown) is integrally connected.

In the cassette station 2, a plurality of cassettes C are positioned at the positions of the positioning projections 10 a on the cassette mounting table 10 serving as a mounting portion in the X direction (the vertical direction in FIG. Direction) Can be placed in a line. And this cassette arrangement direction (X direction)
The wafer carrier 15 movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the carrier path 15a so that each cassette C can be selectively accessed. It has become.

The wafer carrier 15 is configured to be rotatable also in the θ direction.
And it is configured to allow access to the processing unit group G ₃ of the alignment device 52 and the extension unit 53 belonging to the multi-stage unit also.

In the processing station 3, a main transfer device 23 having three tweezers 20, 21, and 22 for holding a wafer W at upper, middle, and lower positions is disposed at a central portion thereof. The processing apparatuses constitute a processing apparatus group in which the processing apparatuses are stacked in multiple stages and are arranged in an integrated manner. In this coating and developing processing apparatus 1, five processing apparatus groups G
₁ , G ₂ , G ₃ , G ₄ , G ₅ can be arranged.
The first and second processing unit groups G ₁ and G ₂ are arranged on the front side of the coating and developing processing unit 1, the third processing unit group G ₃ is arranged on the cassette station 2 side, processing unit group G ₄ of the are arranged in the interface unit 4 side, the fifth processing unit group G ₅ shown by a broken line is disposed on the back side of the coating and developing apparatus 1.

As shown in FIG. 2 in the first processing unit group G _1, 2 single spinner type processing apparatus for performing predetermined processing by placing the wafer W on a spin chuck in a cup CP, for example, an anti-reflection film forming apparatus 30 and the developing device 31 are stacked in two stages from the bottom. And the second processing unit group G ₂
Then, for example, the resist coating device 40 and the development processing device 4
1 are stacked in two stages from the bottom.

As shown in FIG. 3, the third processing unit group G _3, a cooling unit 50, 51 oven-type processing units for performing predetermined processing put on the mounting table of the wafer W, for example, the wafer W is cooled, An alignment device 52 for positioning the wafer W, an extension device 53 for holding the wafer W on standby, pre-baking devices 54 and 55 for heating the wafer W after applying the resist solution, and a post-baking for heating the wafer W after the development process. The devices 56 and 57 are stacked in order from the bottom, for example, in seven stages. In the fourth processing unit group G ₄ , the cooling unit 60, the extension cooling unit 6 for cooling the standby wafer W,
1, extension device 62, cooling device 63,
Post-exposure baking devices 64 and 65 for heating the exposed wafer W, a hard baking device 66 for heating the wafer W on which the anti-reflection film is formed in two stages, and a post-baking device 67 are arranged in order from the bottom, for example. Stacked in seven layers.

At the center of the interface section 4, a wafer carrier 68 is provided. The wafer carrier 68 is configured to freely move in the X and Z directions (vertical direction) and rotate in the θ direction, and the fourth processing unit group G ₄
The extension cooling device 61, the extension device 62, the peripheral exposure device 69 for removing the resist film around the wafer W, and an exposure device (not shown)
It is also configured to be accessible.

The coating and developing apparatus 1 is configured as described above. Next, the hard baking device 66 will be described.

As shown in FIG. 4, the hard baking device 66 is provided with a disk-shaped upper heating plate 71 and a lower heating plate 72 having a thickness for heating the wafer W at the top and bottom of the main body 70. . A heater 73 is built in the upper heating plate 71, and the heater 73 is heated by electric power supplied from a power supply 74 provided outside the main body 70. As in the case of the upper heating plate 71, the lower heating plate 72 has a built-in heater 75, and the heater 75 is heated by electric power supplied from a power supply 76 provided outside the main body 70. . By adjusting the amount of power supplied from the power supplies 74 and 76, the upper heating plate 71 is controlled.
Are set to, for example, 270 ° C., and the lower heating plate 72 is set to, for example, 90 ° C.

The lower heating plate 72 has a pin hole 77, for example,
The lift pins 80 are configured to be able to protrude from the upper surface of the lower heating plate 72 from these pin holes 77 by operation of a lift mechanism (not shown). With this configuration, the lifting pins 80 are configured to be vertically movable between the upper heating plate 71 and the lower heating plate 72 with the back surface of the wafer W supported at three points.
Further, proximity pins 81 are provided on the upper surface of the lower heating plate 72, and when the elevating pins 80 supporting the wafer W are lowered, the wafer W can be supported on the proximity pins 81. . Thus, the wafer W can be heated at the above-mentioned 90 ° C., which is the set temperature of the lower heating plate 72, without being directly mounted on the lower heating plate 72. Conversely, when the lifting pins 80 supporting the wafer W are raised, the wafer W comes closer to the upper heating plate 71. Thereby, the wafer W can be heated at a high temperature of 270 ° C.

Around the upper heating plate 71 and the lower heating plate 72
Are formed with the main body 70 at the periphery thereof. A pipe 8 through which a gas supplied from a gas supply source 84, for example, N ₂ flows, is provided at a lower portion of the main body 70.
5 is provided, and an upper part of the main body 70 is provided with an exhaust pipe 86 connected to an exhaust means (not shown). With this configuration, the air supplied from the gas supply source 84 is
The gas is exhausted from the exhaust pipe 86 through the pipe 85, the gap 83, and the gap 82.

The hard baking device 66 is configured as described above. Next, the operation and effect of the hard baking device 66 will be described.

In the cassette station 2, the wafer carrier 15 moves the wafer W before processing on the cassette mounting table 10.
To access the cassette C containing the
And take out one wafer W. Then, this wafer W
It is carried into the alignment device 52 included in the third processing unit group G ₃ by the wafer transfer body 15.

[0030] Then, finished wafers W in alignment by the alignment device 52 while being held by the tweezers 21 of the main transport apparatus 23, conveyed to the anti-reflection film forming apparatus 30 belonging to the first processing unit group G ₁ Is done.

The wafer W on which the anti-reflection film has been formed by the anti-reflection film forming apparatus 30 is placed on the tweezers 2 of the main carrier 23.
After being transported to the hard baking device 66 while being held at 1, the wafer is loaded into the hard baking device 66 through the wafer loading / unloading port 66a. At this time, the wafer W is supported on lifting pins 80 projecting from the upper surface of the lower heating plate 72, as shown by the solid line in FIG. Next, the wafer W is lowered from the position indicated by the solid line in FIG. 5 to the position indicated by the two-dot chain line, and is supported on the proximity pins 81. The wafer W supported by the proximity pins 81 is heated at, for example, 90 ° C. by the heat generated from the lower heating plate 72. By this heat treatment, the solvent contained in the antireflection film is removed by evaporation.

After the completion of the heating process, the wafer W then rises from the position indicated by the solid line in FIG. 6 to the position indicated by the two-dot chain line, and approaches the lower surface of the upper heating plate 71. Then, the wafer W is heated at, for example, 270 ° C. by the heat generated from the upper heating plate 71. By curing the anti-reflection film by this heat treatment, it is possible to prevent the generation of a so-called mixing layer, and to sufficiently bring out the function of the anti-reflection film.

[0033] Thus the wafer W has been completed a predetermined heat treatment, cooling unit belonging to the fourth processing unit group G ₄ 6
Is carried into 3 after being cooled to a predetermined temperature, is transported to the resist coating unit 40 belonging to the second processing unit group G _2. The resist coating device 40 forms a resist film on the wafer W. Thereafter, the wafer W is carried to the extension cooling unit 61 of the third processing unit group G ₃ of being carried into the pre-baking unit 54 after undergoing the predetermined heat treatment, the fourth processing unit group G ₄ Cooling Is done.
Then, the wafer is taken out of the extension cooling device 61 by the wafer transfer body 68, transferred to the exposure device (not shown) via the peripheral exposure device 69, and subjected to a predetermined exposure process.

As described above, in the hard baking device 66 according to the embodiment of the present invention, the wafer W supported by the elevating pins 80 is brought closer to the lower heating plate 72 to temporarily heat the wafer W at, for example, 90 ° C. After that, the wafer W is brought close to the upper heating plate 71, thereby
It can be finally heated at 0 ° C. As described above, in one hard baking device 66, the relatively low-temperature heating process of the wafer W on the upper heating plate 71 and the relatively high-temperature heating process of the wafer W on the lower heating plate 72 by the vertical movement of the elevating pins 80. And can be performed separately. Therefore, unlike the related art, two hard baking devices having different processing temperatures are not required, and the arrangement space for disposing the hard baking device can be reduced, and the entire device can be reduced.

The main transfer device 23 transfers the wafer W to the hard baking device 66, and in the hard baking device 66, can heat the wafer W at different processing temperatures in two stages. Therefore, it is not necessary for an appropriate transfer device to transfer the wafer W sequentially to two hard baking devices having different processing temperatures as in the related art. Further, in the conventional appropriate transfer device, a total of two loading / unloading of wafers W is required for two hard baking devices having different processing temperatures. The wafer W may be carried in and out only once. Therefore, the number of loading / unloading of the wafer W is reduced by one time as compared with the conventional case. As a result, it becomes possible to transfer, carry in and out the wafer W with less waste than in the related art, and it is possible to reduce the load on the main transfer device 23.

In view of the process, the time required to transfer, carry in and out the wafer W can be shortened, and the processing time required for each wafer W can be shortened accordingly. Therefore, it is possible to improve the throughput.

In the above embodiment, the upper heating plate 71
Was set to a processing temperature of 270 ° C. and the lower heating plate 72 was set to a processing temperature of 90 ° C., but in the present invention, instead, the upper heating plate 71 was set to a processing temperature of 90 ° C. It is also possible to propose a hard baking apparatus 90 shown in FIG. 7 in which the lower heating plate 72 is set to a processing temperature of 270 ° C.

In the hard baking device 90, the wafer W carried into the position shown by the solid line in FIG.
The wafer W is raised to the position indicated by the dashed line, and is once heated at 90 ° C. to the upper side of the heating plate 71. After that, the wafer W after the heat treatment on the low temperature side is lowered, and the lower heating plate 72 is heated.
By supporting it on the proximity pin 81 of
The wafer W is subjected to a heat treatment at a high temperature of 270 ° C.

In the hard baking device 90, the same operation and effect as in the case of the hard baking device 66 are produced. Further, the heat generated from the lower heating plate 72 on the high temperature side heats the upper heating plate 71 on the low temperature side. Thus, the electric power used in the upper heating plate 71 is smaller than that in the case of the hard baking device 66, and power consumption can be reduced.

When heating the wafer W with the upper heating plate 71 of the hard baking device 90, it is more preferable that the distance between the wafer W and the lower heating plate 72 is, for example, 40 mm or more. According to such a configuration, the transfer of heat from the lower heating plate 72 to the wafer W is suppressed by the atmosphere between the lower surface of the wafer W and the upper surface of the lower heating plate 72, and the high temperature generated from the lower heating plate 72. Thermal atmosphere is wafer W
Excessively transmitted to the vehicle. Therefore, it is possible to perform a suitable heat treatment on the wafer W without changing the processing temperature.

[0041] Incidentally, in the embodiment described above, the antireflection film forming device 30 to the first processing unit group G _1, incorporating respectively the hard baking unit 66 in the fourth processing unit group G _4, which in the present invention Instead of anti-reflection film forming device 3
It is also possible to propose a coating and developing apparatus installed outside the processing station 3 with the 0 and the hard baking device 66 being so-called “external”.

As shown in FIGS. 8 and 9, in the coating and developing apparatus, a transfer section 101 is provided outside the end of the transfer path 15a of the wafer transfer body 15. This transfer unit 101
Is provided with a mounting portion 102 on which a wafer W can be mounted, and the mounting portion 102 is moved up and down as appropriate to
For example, three support pins 103 which can freely protrude from the camera are provided. The wafer W is supported by the support pins 103 protruding from the mounting section 102. Therefore, the wafer carrier 1
5 is for supporting the wafer W on the projecting support pins 103, and conversely, for the wafer W supported on the support pins 103.
Is configured to be freely received.

On the back side of the transfer unit 101, that is, on an extension line along the X direction, a sub-wafer transfer unit 110 is provided. The sub-wafer transfer means 110 has two tweezers 111 and 112 for holding the wafer W on the upper and lower sides, and these tweezers 111 and 112 are independently movable forward and backward. The sub-wafer transfer means 110 itself can be moved in the Z direction by an appropriate driving means (not shown), and can be freely rotated in the θ direction. With such a configuration, each of the tweezers 111 and 112 of the sub-wafer carrying unit 110 can place the wafer W on the support pin 103 of the transfer unit 101 or conversely receive the wafer W on the support pin 103. I can do it.

The wafer W is located at a position facing the transfer section 101 with the wafer sub-transport means 110 interposed therebetween.
Film forming apparatus 30 for forming an anti-reflection film on the surface of a substrate
Is provided. The loading / unloading of the wafer W to / from the anti-reflection film forming apparatus 30 is performed through a wafer loading / unloading port 30 a facing the sub-wafer transport unit 110. Further, on the upper part of the anti-reflection film forming device 30, the hard baking devices 66, 66 according to the present embodiment for heating the wafer W on which the anti-reflection film is formed in two stages at different processing temperatures are stacked. Note that these hard baking devices 66, 66 are formed with wafer loading / unloading ports 66a, 66a through which the wafer W can be loaded and unloaded.

With this configuration, in the cassette station 2, the wafer carrier 15 accesses the cassette C on the cassette mounting table 10 for accommodating the unprocessed wafer W, and takes out one wafer W from the cassette C. After that, the wafer carrier 15 moves to the transfer unit 101 and transfers the wafer W onto the support pins 103 of the mounting unit 102. The wafer W supported on the support pins 103 is held by the tweezers 112 of the sub-wafer carrying means 110, and is carried into the anti-reflection film forming apparatus 30 from the wafer carry-in / out port 30a.

The wafer W on which the anti-reflection film is formed by the anti-reflection film forming device 30 is carried into the hard baking device 66 while being held by the tweezers 111 of the sub-wafer carrying means 110, and then is loaded into and out of the wafer. It is carried into the hard baking device 66 from 66a.

The wafer W that has been subjected to the predetermined heating process is then placed on the tweezers 11 of the sub-wafer carrying means 110.
While being held at 1, it is transported from the hard baking device 66 to the transfer unit 101 and is supported on the support pins 103 provided on the mounting unit 102. Next, the wafer W is received by the wafer carrier 15, and the third processing unit group G ₃
Is carried into the alignment device 52 belonging to afterwards,
While finished wafers W in alignment held in tweezers 21 of the main transport apparatus 23 in the alignment apparatus 52, a resist coating device 4 belonging to the second processing unit group G ₂
Transported to zero. The resist coating device 40 forms a resist film on the antireflection film.

As described above, in this coating and developing apparatus,
The sub-wafer transfer unit 110 transfers the wafer W to the hard baking device 66. Therefore, similarly to the case of the main transfer device 23 in the above-described embodiment, it is not necessary for the sub-wafer transfer means 110 to separately transfer the wafer W to two hard baking devices having different processing temperatures.
Also, the loading / unloading of the wafer W to / from the hard baking device 66 may be performed only once. As a result, the sub-wafer transfer means 11
0, the wafer W can be transferred, loaded and unloaded more efficiently than before, and
0 burden can be reduced. Further, the throughput can be improved.

Furthermore, although an example in which a wafer is used as the substrate has been described, the present invention is not limited to this example, and can be applied to substrates such as an LCD substrate and a CD substrate.

[0050]

According to the present invention, the substrate can be heat-treated in two stages at different processing temperatures in one heat treatment apparatus. Therefore, the space for disposing the heat treatment device can be reduced, and the entire device can be reduced in size. In addition, since the transfer time and transfer time of the substrate can be reduced as compared with the conventional case, the load on the transfer device can be reduced, and the transfer of the substrate to and from other devices can be reduced accordingly. The device can be engaged. On the other hand, since the time required for transporting, loading and unloading substrates can be reduced as compared with the conventional case, the processing time per substrate can be reduced, and the throughput can be improved accordingly.

In particular, according to the second and fourth aspects, the heat generated from the lower-side high-temperature side heating plate heats the upper-side low-temperature side heating plate. Power consumption can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view showing the appearance of a coating and developing apparatus provided with a hard baking device according to an embodiment.

FIG. 2 is a front view of the coating and developing apparatus of FIG. 1;

FIG. 3 is a rear view of the coating and developing apparatus of FIG. 1;

FIG. 4 is a perspective view showing a configuration of a hard baking device according to the embodiment of the present invention.

FIG. 5 is an explanatory view showing a state in which a wafer is heated by a lower heating plate of the hard baking apparatus of FIG. 4;

FIG. 6 is an explanatory view showing a state in which a wafer is heated by an upper heating plate of the hard baking apparatus of FIG. 4;

FIG. 7 is a cross-sectional view showing a configuration of a modified example of the hard baking device of FIG.

8 is a plan view showing an external appearance of a coating and developing apparatus provided with the hard baking apparatus of FIG. 4 as an external device.

FIG. 9 is a perspective view showing the configuration of a hard baking device provided in the coating and developing apparatus of FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 coating / developing apparatus 23 main transport apparatus 30 antireflection film forming apparatus 40 resist coating apparatus 66 hard baking apparatus 71 upper heating plate 72 lower heating plate 80 elevating pins C cassette W wafer

Claims (4)

[Claims] In a method of heating a substrate in two stages at different processing temperatures, a first step of heating the substrate close to a low-temperature side heating plate located below the substrate, and thereafter,
A second step of heating the substrate by bringing the substrate closer to a high-temperature side heating plate located above the substrate. 2. A method for heating a substrate in two stages at different processing temperatures, comprising: a first step of heating the substrate close to a low-temperature side heating plate located above the substrate;
A second step of heating the substrate by bringing the substrate closer to a high-temperature side heating plate located below the substrate. 3. A heat treatment apparatus comprising an elevating mechanism capable of elevating and lowering a substrate, and a heating plate for heating the substrate to a predetermined temperature, wherein the heating plate includes an upper heating plate located above the substrate, A heat treatment apparatus, comprising: a lower heating plate located below a substrate, wherein the upper heating plate is set at a higher temperature than the lower heating plate. 4. A heating apparatus comprising a lifting mechanism capable of raising and lowering a substrate and a heating plate for heating the substrate to a predetermined temperature, wherein the heating plate comprises an upper heating plate located above the substrate, A heat treatment apparatus comprising a lower heating plate located below a substrate, wherein the upper heating plate is set at a lower temperature than the lower heating plate.