JP7211862B2 - Heating device, substrate processing system, and substrate processing method - Google Patents

Description

The present invention relates to a heating device, substrate processing system, and substrate processing method.

Electronic devices such as semiconductor devices are required to be smaller and thinner. When manufacturing such an electronic device, for example, a substrate having a plurality of electronic components is attached to a support such as glass to form a laminate, and the subsequent substrate is processed in this laminate state. is known (see, for example, Patent Document 1).

JP 2014-170847 A

In the laminate described in Patent Document 1, a substrate and a support are attached via an adhesive layer. This laminate is formed by first applying an adhesive to a substrate, then heating the substrate to volatilize the solvent in the adhesive, and then bonding the substrate and support. The substrate coated with the adhesive is heated, for example, by placing the substrate coated with the adhesive in a chamber and using a heater or the like in the chamber while evacuating the chamber. At this time, in the chamber, a gas flow is generated by the exhaust gas, and if this gas flow traverses the substrate surface in one direction, the thickness of the adhesive layer after volatilization of the solvent may become uneven. The non-uniformity in the thickness of the adhesive layer causes a decrease in the accuracy of bonding between the substrate and the support, making it impossible to perform subsequent processing of the laminate (substrate) with high accuracy.

The present invention provides a heating apparatus capable of suppressing unevenness in the thickness of an adhesive layer when heating an adhesive applied to a substrate and bonding the substrate and the support with high accuracy, and the substrate. An object of the present invention is to provide a processing system and a substrate processing method.

A heating apparatus according to an aspect of the present invention includes a chamber for storing and heating a substrate coated with an adhesive, and a suction unit for sucking the inside of the chamber, wherein the chamber holds the substrate. A first chamber containing a substrate and having a side wall capable of regulating gas communication with the outside on the side of the substrate; and a first chamber for regulating gas flow between the first chamber and the second chamber in a region outside at least the substrate accommodated in the first chamber in plan view. and a partition section for partitioning the chamber and the second chamber, the suction section sucks the gas in the first chamber from a suction port provided in the first chamber, and the first chamber is for loading and unloading the substrate. and a shutter for opening and closing the opening; the suction port is provided in the ceiling of the first chamber; and the second chamber, and is arranged inside the substrate accommodated in the first chamber in a plan view.
Further , a heating device according to an aspect of the present invention is a heating device comprising a chamber for storing and heating a substrate coated with an adhesive, and a suction unit for sucking the inside of the chamber, The chamber includes a first chamber that accommodates the substrate and has a side wall capable of regulating gas flow between the substrate and the outside on the side of the substrate; a second chamber which allows gas flow and has a heating portion for heating the substrate; and a partition section that partitions the first chamber and the second chamber so as to regulate the flow of gas therebetween, and the suction section extends from a suction port provided in the first chamber to the first chamber. Inhale the air in the room.

A substrate processing system according to an aspect of the present invention includes the heating device according to the above aspect of the present invention.

A substrate processing method according to an aspect of the present invention is a method of processing a substrate by using a chamber for containing and heating a substrate coated with an adhesive, wherein the chamber contains the substrate, and the side of the substrate is heated. On the other hand, a first chamber having a side wall capable of regulating gas flow to and from the outside, and a heating portion disposed below the first chamber and allowing gas flow to and from the outside to heat the substrate. and the first chamber and the second chamber so as to regulate the flow of gas between the first chamber and the second chamber in a region outside at least the substrate accommodated in the first chamber in plan view. The substrate is housed in the first chamber, the substrate housed in the first chamber is heated by the heating unit, and the suction port provided in the first chamber is supplied with the first chamber. sucking the gas in one chamber, wherein the gas in the first chamber is sucked from a suction port provided in the ceiling of the first chamber, and the boundary between the first chamber and the second chamber; It includes introducing outside air into the first chamber from an introduction path arranged inside the substrate accommodated in the first chamber in a plan view.
Further, a substrate processing method according to an aspect of the present invention is a method of processing a substrate using a chamber for storing and heating a substrate coated with an adhesive, wherein the chamber stores the substrate and heats the substrate. A first chamber having a side wall capable of regulating gas flow to the outside on the side of the first chamber, and a heating unit disposed below the first chamber and allowing gas flow to the outside to heat the substrate. and a first chamber and a second chamber so as to regulate the flow of gas between the first chamber and the second chamber in a region outside at least the substrate accommodated in the first chamber in plan view. a partition section for partitioning the substrate from the first chamber; accommodating the substrate in the first chamber; heating the substrate accommodated in the first chamber by the heating unit; and a suction port provided in the first chamber. heating the substrate a plurality of times at different temperatures; and heating the substrate a plurality of times, wherein the first heating is the most solvent contained in the adhesive. setting a temperature one-third to one-half of the lower boiling point.
Further , a substrate processing method according to an aspect of the present invention is a method of processing a substrate using a chamber for accommodating and heating a substrate coated with an adhesive, wherein the chamber heats the substrate. A first chamber containing the substrate and having a side wall capable of regulating gas communication with the outside on the side of the substrate, and a first chamber disposed below the first chamber and allowing gas communication with the outside. a second chamber having a heating portion for heating the substrate; and gas flow between the first chamber and the second chamber in a region outside at least the substrate accommodated in the first chamber in plan view. and a partition part that partitions the first chamber and the second chamber so as to regulate the substrate, the substrate is accommodated in the first chamber, and the substrate accommodated in the first chamber is separated from the It includes heating by the heating unit and sucking gas in the first chamber from a suction port provided in the first chamber.

ADVANTAGE OF THE INVENTION According to this invention, when the adhesive agent apply|coated to the board|substrate is heated, it can suppress that the thickness nonuniformity of an adhesive layer arises, and can affix a board|substrate and a support body with high precision.

It is a sectional view showing an example of a heating device concerning this embodiment. It is a top view which shows an example of the inside of a 1st chamber. It is a figure which shows the state which opened|released the opening part. It is a figure which shows the state which closed|blocked the opening part. It is a figure which expands and shows a part (rear side) of a chamber. It is a figure which expands and shows a part (front side) of a chamber. (A) is a diagram showing an example of the film thickness of the adhesive when the substrate coated with the adhesive is heated using the heating device according to the present embodiment, and (B) is a diagram showing an example of the film thickness of the adhesive; It is a figure which shows an example of the film thickness of an adhesive when a board|substrate is heated using. It is a figure which shows an example of the substrate processing system which concerns on this embodiment. It is a figure which shows the other example of the substrate processing system which concerns on this embodiment. It is a flow chart which shows an example of a substrate processing method concerning this embodiment. (A) is a diagram showing an operation of applying an adhesive layer to a substrate, and (B) is a diagram showing an example of a substrate coated with an adhesive. 5 is a flow chart showing an example of the operation of heating a substrate in the substrate processing method according to the embodiment; (A) is a diagram showing an example of a state in which a separation layer is formed on a support, and (B) is a diagram showing an example of the operation of inverting the support. It is a figure which shows an example of the operation|movement which sticks a board|substrate and a support body. It is a figure which shows the other example of the substrate processing system which concerns on this embodiment.

Hereinafter, embodiments will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below. In addition, in order to explain the embodiments in the drawings, the scale is changed as appropriate, such as by enlarging or emphasizing a portion. Hereinafter, the vertical direction is defined as the direction perpendicular to the horizontal plane. Among the directions parallel to the horizontal plane, the direction in which the substrate S is carried in and out of the chamber 10 is defined as the front-rear direction, the side where the substrate S is carried in and out is defined as the front side, and the side opposite to the front side is defined as the rear side.

FIG. 1 is a cross-sectional view showing an example of a heating device 100 according to this embodiment. As shown in FIG. 1, the heating device 100 includes a chamber 10, a suction section 30, a cover 40, and an ejection device 50. As shown in FIG. The chamber 10 is placed, for example, on a floor surface parallel to a horizontal plane, and accommodates and heats the substrate S coated with an adhesive. In this embodiment, the substrate S is formed with a plurality of electronic components. Electronic components include, for example, chips and the like formed using semiconductors and the like. Note that the substrate S may have a structure in which a plurality of electronic components are held by a mold.

The chamber 10 includes a first chamber 11 , a second chamber 12 , a partition portion 13 , side walls 14 , a bottom portion 15 , a ceiling portion 16 , a heating portion 17 , an upper heating portion 18 , and a substrate elevating portion 19 . , and a shutter 20 . The first chamber 11 is a space defined by the side wall 14 , the ceiling portion 16 , the upper surface 17 a of the heating portion 17 and the partition portion 13 . The first chamber 11 accommodates the substrate S. The second chamber 12 is a space defined by a side wall 14 , a bottom portion 15 , a heating portion 17 and a partition portion 13 . A body portion of the heating unit 17 is arranged in the second chamber 12 .

The partition part 13 is provided so as to partition the first chamber 11 and the second chamber 12 . The partition part 13 is arranged so as to block the space between the side wall 14 and the heating part 17 . With this configuration, the partition part 13 regulates the flow of gas between the first chamber 11 and the second chamber 12 at least in a region outside the substrate S accommodated in the first chamber 11 in plan view. A bent portion 13 a bent downward is provided on the outer peripheral side of the partition portion 13 . The bent portion 13a is fixed to the side wall 14 by a fixing member (not shown). The partition portion 13 may be provided with a seal member (not shown) sandwiched between the bent portion 13 a and the side wall 14 . The inner peripheral side of the partition portion 13 is fixed to a flange portion 21c of the frame 21, which will be described later, by a fixing member (not shown).

The side wall 14 has a rectangular frame shape in plan view. The side wall 14 has a substrate opening (opening) 14a and a lifting opening 14b. The substrate opening 14a is provided so as to communicate between the inside and the outside of the first chamber 11, and has a cross-sectional shape through which the substrate S can pass. The substrate S is carried into or out of the chamber 10 (inside the first chamber 11) through the substrate opening 14a. The elevating opening 14b is provided so as to communicate the inside and outside of the second chamber 12, and a part of the substrate elevating section 19 penetrates through the opening 14b. The lifting opening 14b is provided on the side wall 14 opposite to the side wall 14 on which the substrate opening 14a is provided. The vertical direction of the lifting opening 14b is set so as to correspond to the distance by which a part of the substrate lifting section 19 moves up and down.

The bottom portion 15 is rectangular in plan view, for example, and placed on a base or the like having a surface parallel to a horizontal surface such as a floor surface. The bottom portion 15 is connected to the lower end of the side wall 14 and seals the lower side of the second chamber 12 . A sealing member or the like (not shown) may be sandwiched between the side wall 14 and the bottom portion 15, or a sealing material may be filled or attached to the connecting portion between the side wall 14 and the bottom portion 15. FIG. A plurality of base portions 22 to be described later are placed on the bottom portion 15 . Each of the base portions 22 may or may not be fixed to the bottom portion 15 .

The ceiling part 16 has, for example, a rectangular shape in plan view, is connected to the upper end of the side wall 14 , and seals the upper part of the first chamber 11 . The ceiling portion 16 is parallel to the bottom portion 15 . The ceiling portion 16 supports an upper heating portion 18 described later in a suspended state. That is, a gap (distance) D is provided between the lower surface of the ceiling section 16 and the upper surface of the upper heating section 18 . The ceiling portion 16 has a suction port 16a. The gas in the first chamber 11 is discharged through the suction port 16a. The suction port 16a is provided, for example, at a position overlapping the center or substantially the center of the substrate S accommodated in the first chamber 11 in plan view.

The heating unit 17 heats the substrate S accommodated in the first chamber 11 from below. The heating unit 17 is, for example, a disk-shaped hot plate in plan view, and has a diameter larger than that of the substrate S housed in the first chamber 11 (see FIG. 2). The heating portion 17 has a planar upper surface 17a, which is parallel to the bottom portion 15 and the ceiling portion 16, for example. The heating unit 17 has a through hole 17b for arranging a pin 19a of the substrate elevating unit 19, which will be described later. The through hole 17b is provided so as to vertically penetrate the heating portion 17 . For example, three through-holes 17b are provided in this embodiment. The through hole 17b is used as an introduction path for introducing outside air into the first chamber 11 .

FIG. 2 is a plan view showing an example of the inside of the first chamber 11. As shown in FIG. As shown in FIG. 2, the three through-holes 17b are arranged one by one at positions corresponding to vertices of an equilateral triangle whose center of gravity is the center position of the heating unit 17 in plan view. Alternatively, the three through-holes 17b are arranged at regular intervals on a circle around the central position of the heating part 17. As shown in FIG. The through-holes 17b are provided corresponding to the pins 19a of the board elevating section 19, which will be described later.

A fixing pin 17c is provided on the upper surface 17a of the heating unit 17 . The fixing pin 17c is used to mount the substrate S at the upper end. In this embodiment, for example, four fixing pins 17c are arranged. A total of four fixing pins 17c are provided, one at the center of the heating unit 17 in plan view and one at each of the three vertices of an equilateral triangle whose center of gravity is the center of the heating unit 17. be done. The three fixing pins 17c except for the fixing pin 17c provided at the center of the heating portion 17 are arranged at equal intervals on the circumference around the center position of the heating portion 17. As shown in FIG. The circumference on which the three fixing pins 17c are arranged differs from the circumference on which the three through holes 17b (three pins 19a) are arranged. may be provided above. The upper end of the fixing pin 17c is provided so as to be lower than the upper end of the pin 19a, which will be described later, when the pin 19a is raised.

The heating section 17 is supported by a frame 21 arranged in the second chamber 12 . The frame 21 has a frame bottom portion 21a, a frame side portion 21b and a flange portion 21c. The frame bottom portion 21 a is disc-shaped and supported by a plurality of base portions 22 . The frame bottom portion 21a has a plurality of through holes 21d. 21 d of through-holes are connected with the through-hole 17b of the heating part 17, and the pin 19a is arrange|positioned. The frame side portion 21b is provided in a cylindrical shape along the outer periphery of the frame bottom portion 21a. The flange portion 21c is provided so as to protrude outward from the upper end of the frame side portion 21b. The heating unit 17 is supported by the frame 21 while being housed in the frame 21 .

The upper heating unit 18 is provided in the first chamber 11 and heats the substrate S accommodated in the first chamber 11 from above. A hot plate, for example, is used for the upper heating unit 18 . The upper heating unit 18 is, for example, a disk-shaped hot plate in plan view, and has a diameter larger than the substrate S accommodated in the first chamber 11 . The upper heating section 18 is fixed in a state of being suspended from the ceiling section 16 and arranged above the substrate S. As shown in FIG. In this embodiment, the upper heating unit 18 is arranged between the suction port 16a and the substrate S. As shown in FIG. The upper heating section 18 is arranged with a gap D between it and the ceiling section 16 . Therefore, when sucked from the suction port 16a, the gas in the first chamber 11 reaches the suction port 16a after flowing through the gap D from the side edge side of the upper heating section 18 along the upper surface side.

The substrate elevating unit 19 elevates the substrate S accommodated in the first chamber 11 . The substrate elevating section 19 has a plurality of pins 19a, a pin support section 19b that supports the plurality of pins 19a, and a pin driving section 19c that raises and lowers the plurality of pins 19a. The pin 19a can mount the substrate S at its upper end. The pins 19a are used when placing the substrate S on the fixing pins 17c or receiving the substrate S placed on the fixing pins 17c. The plurality of pins 19a are arranged one by one at positions corresponding to three vertices of an equilateral triangle whose center of gravity is the center of the heating unit 17 in plan view. The plurality of pins 19a are arranged to pass through the through holes 17b of the heating unit 17, and can move up and down within the through holes 17b. The plurality of pins 19a protrude into the first chamber 11 from the upper surface 17a of the heating unit 17 when ascending, and are retracted from the upper surface 17a of the heating unit 17 when descending.

As described above, when the pin 19a is raised, the upper end of the pin 19a is higher than the upper end of the fixed pin 17c. Therefore, the substrate S placed on the pins 19a when the pins 19a are raised can be placed on the fixed pins 17c by lowering the pins 19a. Further, the board S placed on the fixed pins 17c can be received by raising the pins 19a.

The outer diameter of each pin 19a is smaller than the inner diameter of the through hole 17b. Therefore, when the plurality of pins 19a are inserted into the through holes 17b, a gap K is formed between the outer peripheral surface of the pins 19a and the inner peripheral surface of the through hole 17b. The gap K communicates between the first chamber 11 and the second chamber 12 . The gap K is an introduction path for introducing outside air into the first chamber 11 . The size of the gap K can be arbitrarily set, and the size of the gap K can be adjusted by adjusting the outer diameter of the pin 19a or the inner diameter of the through hole 17b.

The pin support portion 19b is, for example, plate-shaped, and the lower ends of a plurality of pins 19a are fixed to the upper surface side. The pin support portion 19b is arranged on the lower side inside the second chamber 12 . The pin support portion 19b is arranged so that the end on the back side protrudes to the outside of the second chamber 12 from the lifting opening portion 14b. The pin support portion 19b can move up and down while being guided by a guide (not shown), for example, and moves up and down together with the plurality of pins 19a. By fixing a plurality of pins 19a to one pin support portion 19b, the pin support portion 19b can be moved up and down to move the plurality of pins 19a up and down at the same time or substantially at the same time.

The pin driving section 19c raises and lowers the plurality of pins 19a by raising and lowering the pin support section 19b. The pin driving portion 19c is arranged outside the second chamber 12 . The pin drive portion 19c has a drive source such as an air cylinder device or an electric motor, and the pin support portion 19b (pin 19a) is moved up and down by the driving force of this drive source. In addition, the board|substrate raising/lowering part 19 is not limited to an above-described structure, if it is the structure which raises/lowers the pin 19a. For example, a configuration in which each pin 19a is moved up and down via a rank and pinion mechanism or a gear train using a drive source such as an electric motor may be applied.

The shutter 20 opens and closes the substrate opening 14a. FIG. 3 is a diagram showing a state in which the substrate opening 14a is opened. FIG. 4 is a diagram showing a state in which the substrate opening 14a is closed. 4 shows an example of the operation of the shutter 20 and the shutter driving section 23. FIG. FIG. 3 shows a state in which the shutter 20 is arranged at the open position P1. FIG. 4 shows a state in which the shutter 20 is arranged at the closed position P2.

As shown in FIGS. 3 and 4, the shutter 20 is movable between an open position P1 that opens the substrate opening 14a and a closed position P2 that closes the substrate opening 14a. As the shutter 20, a plate-like member having a size capable of closing the substrate opening 14a is used. At the open position P1, the shutter 20 is retracted downward from the front-rear direction of the substrate opening 14a. At the closed position P2, the shutter 20 contacts and seals the periphery of the substrate opening 14a. In addition, the shutter 20 may be provided with an airtight sealing member in a portion that abuts on the peripheral edge of the substrate opening 14a.

The shutter 20 is moved between an open position P<b>1 and a closed position P<b>2 by a shutter driving section 23 . The shutter drive unit 23 includes an elevation drive unit 23a that vertically moves (lifts) the shutter 20, and a horizontal drive unit 23b that moves the shutter 20 in the front-rear direction (horizontal direction). For example, an air cylinder mechanism or the like is used for each of the elevation drive section 23a and the horizontal drive section 23b. The elevation drive section 23a includes a guide section 23c extending in the vertical direction. The elevation drive section 23a ascends and descends along the guide section 23c. The elevation driving section 23a moves the shutter 20 to the upper position or the lower position.

The horizontal drive section 23b is provided in the elevation drive section 23a, and moves up and down together with the elevation drive section 23a along the guide section 23c. The horizontal drive portion 23b includes a transmission member 23d that advances and retreats in the front-rear direction. The transmission member 23d advances or retreats in the front-rear direction along a guide portion 23e provided in the elevation drive portion 23a. The shutter 20 is connected to the horizontal drive section 23b via the transmission member 23d. The horizontal driving portion 23b advances or retreats the transmission member 23d to move the shutter 20 to the front side position or the rear side position.

As shown in FIG. 3, the shutter 20 can be placed at the open position P1 by placing the shutter 20 on the lower side by the elevation drive section 23a and placing the shutter 20 on the front side by the horizontal drive section 23b. When the shutter 20 is arranged at the open position P1, the substrate opening 14a is opened. In this case, the substrate S can be carried into or out of the first chamber 11 through the substrate opening 14a by, for example, a substrate transport mechanism (not shown).

Further, as shown in FIG. 4, the shutter 20 can be arranged at the closing position P2 by arranging the shutter 20 on the upper side by the elevation driving section 23a and arranging the shutter 20 on the rear side by the horizontal driving section 23b. . When the shutter 20 is arranged at the closed position P2, the substrate opening 14a is closed. In this case, outflow and inflow of gas (air, outside air) into the chamber 10 from the substrate opening 14a is restricted. That is, in the first chamber 11, the outflow and inflow of gas from the side wall 14 are restricted.

The suction part 30 sucks the inside of the chamber 10 . A suction pump, for example, is used for the suction unit 30 . The suction unit 30 sucks the gas in the first chamber 11 from the suction port 16 a provided in the ceiling portion 16 of the first chamber 11 . The suction amount and suction timing by the suction unit 30 may be controlled by a control device (not shown), or may be set manually by an operator or the like. For example, the control device (not shown) may always drive the suction unit 30 regardless of the position of the shutter 20, or the timing when the shutter 20 is placed at the closed position P2 (the timing when the substrate opening 14a is closed). ) to drive the suction unit 30 . The gas sucked from inside the chamber 10 by the suction part 30 is released into the cover 40 . Also, the gas inside the cover 40 flows into the chamber 10 . The inflow of gas into the chamber 10 will be described later.

A cover 40 is provided to surround the space in which the chamber 10 is arranged. The cover 40 may be provided, for example, so as to surround a space including devices other than the chamber 10 (heating device 100). Cover 40 may be, for example, a clean room or the like. The gas inside the cover 40 is discharged outside by the discharge device 50 . As the discharge device 50, for example, a fan or the like is used. The gas in the chamber 10 is discharged into the cover 40 and exhausted to the outside by the exhaust device 50 together with the gas in the cover 40 .

5 and 6 are enlarged views of a portion of the chamber 10. FIG. 5 shows a cross-sectional view at the rear portion of the chamber 10 and FIG. 6 shows a cross-sectional view at the front end of the chamber 10. FIG. As the suction part 30 sucks the first chamber 11 inside the chamber 10, outside air is introduced into the chamber 10 as shown in FIGS. 5 and 6 show a state in which the shutter 20 is arranged at the closed position P2 when the chamber 10 is being sucked by the sucking section 30. As shown in FIG. As the gas in the first chamber 11 is discharged to the outside of the chamber 10 through the suction port 16a, the pressure inside the first chamber 11 closed by the shutter 20 becomes negative.

When the pressure inside the first chamber 11 becomes negative, as shown in FIG. flows into the first chamber 11 through the gap K (introduction path). As a result, the pressure in the second chamber 12 becomes negative, and the outside air A flows into the second chamber 12 through the lift opening 14b. Therefore, the outside air A that has flowed into the second chamber 12 from the lift opening 14b is introduced into the first chamber 11 through the gap K that is the introduction path.

The outside air A introduced into the first chamber 11 flows sideways (radially outward) along the lower surface of the substrate S, as shown in FIGS. It rises around the edge of the substrate S in the first chamber 11 . The rising outside air A flows from the edge of the upper heating section 18 to the upper side of the upper heating section 18, and flows through the gap D between the ceiling section 16 and the upper heating section 18 toward the suction port 16a. That is, in the gap D, the outside air A flows radially outward from the edge of the upper heating section 18 . The outside air A that has reached the suction port 16a is discharged to the outside of the chamber 10 through the suction port 16a.

As described above, in the chamber 10, as paths for the outside air A to flow, there are a path from the lifting opening 14b to the gap K, a path through the gap K into the first chamber 11, and a path from the gap K to the substrate S. A path toward the edge of the substrate S along the bottom surface, a path going around the edge of the substrate S and entering the gap D, and a path flowing through the gap D to reach the suction port 16a are formed. A gap K is used as an introduction path through which the outside air A is introduced into the first chamber 11 . This gap K is the boundary between the first chamber 11 and the second chamber 12 and is arranged inside the substrate S accommodated in the first chamber 11 in plan view. Therefore, in the first chamber 11, a path for the outside air A is formed like the path described above.

FIG. 7A is a diagram showing an example of the film thickness of the adhesive when the substrate S coated with the adhesive is heated using the heating device 100 according to the present embodiment, and FIG. 10A and 10B are diagrams showing an example of the film thickness of an adhesive when a substrate S is heated using a heating device according to a comparative example; FIG. 7A and 7B are graphs showing the distribution of the film thickness of the adhesive on the substrate S. FIG. In the graphs of FIGS. 7A and 7B, the horizontal axis is the position in the front-rear direction of the substrate S, and the vertical axis is the film thickness of the adhesive. As shown in FIG. 7A, in this embodiment, as described above, the outside air A that has flowed from the second chamber 12 into the first chamber 11 flows from the edge of the substrate S into the suction port 16a of the ceiling portion 16. Since the adhesive flows toward the substrate S, there is little variation in the film thickness of the adhesive from the front end portion to the rear end portion of the substrate S, and the entire substrate S has a substantially uniform film thickness.

In addition, in the present embodiment, the outside air A that has flowed from the edge of the substrate S flows through the gap D between the ceiling portion 16 and the upper heating portion 18, so there is no or little outside air A flowing on the surface side of the adhesive layer. Therefore, the variation in film thickness of the adhesive after heating is small.

On the other hand, in the example shown in FIG. 7B, in the first chamber 11 containing the substrate S, the structure is not such that the circulation of outside air from the side wall 14 is restricted, and furthermore, the heating device without the partition 13 is used. A case where the substrate S is heated is shown. In the heating device according to this comparative example, the surroundings of the chamber 10 are evacuated to discharge the gas inside the chamber 10 to the outside of the chamber 10 . At this time, the outside air flows into the first chamber 11 through the gap in the side wall 14 of the chamber 10 or the gap between the shutter 20 and the side wall 14. For example, the outside air flows from the front side to the rear side in the first chamber 11. It is in a state of

As a result, in the heating apparatus according to the comparative example, a flow of outside air may be formed on the surface of the substrate S. The film thickness of the adhesive layer may vary. When the outside air flows in one direction from the front side to the rear side of the substrate S, as shown in FIG. put away. In this embodiment, by heating the substrate S using the heating apparatus 100 described above, variations in the thickness of the adhesive layer can be suppressed.

FIG. 8 is a diagram showing an example of a substrate processing system 200 according to this embodiment. As shown in FIG. 8 , the substrate processing system 200 includes a coating device 110 , a heating device 100 and a bonding device 120 . The coating device 110 applies an adhesive to the substrate S before being heated by the heating device 100 . The coating device 110 applies an adhesive to the substrate S by spin coating, for example, to form an adhesive layer. Note that the coating device 110 may form the adhesive layer by other coating methods such as a dipping method, a roller blade method, a doctor blade method, a spray method, and a slit nozzle method. The attaching device 120 attaches a support such as glass to the substrate S that has been heated by the heating device 100 . At least one of the application device 110 and the application device 120 may be omitted.

FIG. 9 is a diagram showing another example of the substrate processing system. A substrate processing system 200A shown in FIG. 9 has a configuration in which a plurality of heating apparatuses 100 are arranged with respect to the substrate processing system 200 . In this case, if the processing in the heating device 100 takes longer than the processing in the coating device 110 and the bonding device 120, the plurality of heating devices 100 may be provided to heat the substrate S in parallel. can be done. Therefore, the overall processing time of the substrate S in the substrate processing system 200A can be shortened.

FIG. 10 is a flow chart showing an example of a substrate processing method according to this embodiment. As shown in FIG. 10, in the present embodiment, a step of applying an adhesive to a substrate S (step S01), a step of heating the substrate (step S02), and forming a separation layer on a support. It includes a step (step S03), a step of inverting the support (step S04), and a step of attaching the substrate S and the support (step S05).

FIG. 11A is a diagram showing an example of the operation in step S01. FIG. 11A is a diagram showing the operation of applying an adhesive layer to the substrate S, and FIG. 11B is a diagram showing an example of the substrate S to which the adhesive is applied. As shown in FIG. 11A, in step S01, for example, the substrate S is held on a stage (not shown), and a liquid material for forming the adhesive layer 61 is discharged from a nozzle or the like onto the formation surface Sa of the substrate S. . By rotating the stage in this state, the liquid spreads over the formation surface Sa of the substrate S, and an adhesive layer 61 is formed on the formation surface Sa of the substrate S as shown in FIG. 11B.

As the substrate S, for example, a circular or nearly circular semiconductor wafer with a thickness of 600 to 800 μm is used. The thickness of the semiconductor wafer is arbitrary. Further, the substrate S may be a glass plate having a thickness of 500 to 1500 μm, for example, instead of the semiconductor wafer. The substrate S is not limited to being circular or substantially circular, and may be of other shapes, such as rectangular, elliptical, and polygonal.

As the adhesive, various adhesives known in the art can be used, such as acrylic, novolac, naphthoquinone, hydrocarbon, polyimide, and elastomer. The resin contained in the adhesive layer 61 may be any one having adhesive properties, and examples thereof include hydrocarbon resins, acrylic-styrene resins, maleimide resins, elastomer resins, or combinations thereof. mentioned.

The melting point of the adhesive varies depending on the type and molecular weight of the resin, and the blending of plasticizers and the like in the adhesive. The type and molecular weight of the resin contained in the adhesive can be appropriately selected according to the type of the substrate and support. Inside is preferred. When the melting point of the resin used for the adhesive is in the range of 50° C. or higher and 300° C. or lower, the fluidity of the adhesive layer during heating can be suppressed. Also, the melting point of the adhesive layer 61 may be appropriately adjusted by blending a plasticizer, a resin with a low degree of polymerization, or the like. The melting point can be measured, for example, using a known differential scanning calorimeter (DSC).

(hydrocarbon resin)
A hydrocarbon resin is a resin having a hydrocarbon skeleton and formed by polymerizing a monomer composition. As the hydrocarbon resin, a cycloolefin-based polymer (hereinafter sometimes referred to as "resin (A)"), and at least one resin selected from the group consisting of terpene resins, rosin-based resins and petroleum resins (hereinafter referred to as " (sometimes referred to as "resin (B)"), but is not limited thereto.

The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin monomer. Specific examples include ring-opening (co)polymers of monomer components containing cycloolefin monomers, and resins obtained by addition (co)polymerization of monomer components containing cycloolefin monomers.

Examples of the cycloolefin-based monomer contained in the monomer component constituting the resin (A) include bicyclics such as norbornene and norbornadiene; tricyclics such as dicyclopentadiene and dihydroxypentadiene; and tetracyclododecene. tetracyclics, pentacyclics such as cyclopentadiene trimer, heptacyclics such as tetracyclopentadiene, or these polycyclic alkyl (methyl, ethyl, propyl, butyl, etc.) substituted products, alkenyl (vinyl, etc.) Substituted products, alkylidene (ethylidene etc.) substituted products, aryl (phenyl, tolyl, naphthyl etc.) substituted products and the like can be mentioned. Among these, norbornene-based monomers selected from the group consisting of norbornene, tetracyclododecene, and alkyl-substituted products thereof are particularly preferred.

The monomer component constituting the resin (A) may contain other monomers copolymerizable with the cycloolefin-based monomers described above, and preferably contains, for example, alkene monomers. Alkene monomers include, for example, ethylene, propylene, 1-butene, isobutene, 1-hexene, α-olefins, and the like. Alkene monomers may be linear or branched.

Moreover, it is preferable to contain a cycloolefin monomer as a monomer component constituting the resin (A) from the viewpoint of high heat resistance (low thermal decomposition and thermal weight loss). The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and further preferably 20 mol% or more. preferable. In addition, the ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is not particularly limited, but from the viewpoint of solubility and stability over time in a solution, it is preferably 80 mol% or less. It is more preferably 70 mol % or less.

Moreover, a linear or branched alkene monomer may be contained as a monomer component constituting the resin (A). The ratio of the alkene monomer to the total monomer components constituting the resin (A) is preferably 10 to 90 mol%, more preferably 20 to 85 mol%, from the viewpoint of solubility and flexibility. , 30 to 80 mol %.

The resin (A) is, for example, a resin having no polar group, such as a resin obtained by polymerizing a monomer component consisting of a cycloolefin monomer and an alkene monomer. is preferable for suppressing the generation of gas.

The polymerization method, polymerization conditions, and the like for polymerizing the monomer components are not particularly limited, and may be appropriately set according to conventional methods.

Examples of commercially available products that can be used as the resin (A) include "TOPAS" manufactured by Polyplastics Co., Ltd., "APEL" manufactured by Mitsui Chemicals, Inc., and "ZEONOR" and "ZEONEX" manufactured by Nippon Zeon Co., Ltd. , and "ARTON" manufactured by JSR Corporation.

The resin (B) is at least one resin selected from the group consisting of terpene-based resins, rosin-based resins and petroleum resins. Specifically, terpene-based resins include, for example, terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, and hydrogenated terpene phenol resins. Examples of rosin-based resins include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of petroleum resins include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, and coumarone-indene petroleum resins. Among these, hydrogenated terpene resins and hydrogenated petroleum resins are more preferred.

The weight average molecular weight of resin (B) is not particularly limited, but is preferably 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of degassing is reduced in a high temperature environment. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the peeling speed when peeling the laminate is favorable. The weight average molecular weight of the resin (B) in the present embodiment means the polystyrene-equivalent molecular weight measured by gel permeation chromatography (GPC).

As the resin, a mixture of the resin (A) and the resin (B) may be used. By mixing, good heat resistance and peeling speed can be obtained. For example, the mixing ratio of resin (A) and resin (B) is (A):(B) = 80:20 to 55:45 (mass ratio). It is preferable because it is excellent in durability and flexibility.

(acrylic-styrene resin)
Examples of acrylic-styrene resins include resins obtained by polymerizing styrene or styrene derivatives and (meth)acrylic acid esters as monomers.

Examples of (meth)acrylic acid esters include (meth)acrylic acid alkyl esters having a chain structure, (meth)acrylic acid esters having an aliphatic ring, and (meth)acrylic acid esters having an aromatic ring. . Examples of (meth)acrylic acid alkyl esters having a chain structure include acrylic long-chain alkyl esters having an alkyl group of 15 to 20 carbon atoms, acrylic alkyl esters having an alkyl group of 1 to 14 carbon atoms, and the like. . Examples of acrylic long-chain alkyl esters include those of acrylic acid or methacrylic acid in which the alkyl group is n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, or the like. Alkyl esters are mentioned. In addition, the said alkyl group may be branched.

Examples of acrylic alkyl esters having an alkyl group having 1 to 14 carbon atoms include known acrylic alkyl esters used in existing acrylic adhesives. For example, alkyl acrylic acid or methacrylic acid in which the alkyl group is a methyl group, an ethyl group, a propyl group, a butyl group, a 2-ethylhexyl group, an isooctyl group, an isononyl group, an isodecyl group, a dodecyl group, a lauryl group, a tridecyl group, or the like. esters.

(Meth)acrylates having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, norbornyl (meth)acrylate, isobornyl (meth)acrylate, tricyclodecanyl (Meth)acrylate, tetracyclododecanyl (meth)acrylate, dicyclopentanyl (meth)acrylate and the like can be mentioned, and isobornyl methacrylate and dicyclopentanyl (meth)acrylate are more preferable.

The (meth)acrylic acid ester having an aromatic ring is not particularly limited, but examples of the aromatic ring include a phenyl group, a benzyl group, a tolyl group, a xylyl group, a biphenyl group, a naphthyl group, and an anthracenyl group. , a phenoxymethyl group, a phenoxyethyl group, and the like. In addition, the aromatic ring may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.

(maleimide resin)
Examples of maleimide resins include monomers such as N-methylmaleimide, N-ethylmaleimide, Nn-propylmaleimide, N-isopropylmaleimide, Nn-butylmaleimide, N-isobutylmaleimide, N-sec -butylmaleimide, N-tert-butylmaleimide, Nn-pentylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide, N-laurylmaleimide, N-stearylmaleimide, etc. Maleimide having an aliphatic hydrocarbon group such as maleimide, N-cyclopropylmaleimide, N-cyclobutylmaleimide, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide having an alkyl group of , N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenylmaleimide and the like resins obtained by polymerizing aromatic maleimides having aryl groups such as .

For example, a cycloolefin copolymer, which is a copolymer of a repeating unit represented by the following chemical formula [Chem. 1] and a repeating unit represented by the following chemical formula [Chem. 2], can be used as the adhesive component resin.

(In the above chemical formula [Formula 2], n is an integer of 0 or 1 to 3.)
As such a cycloolefin copolymer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals, Inc.) and the like can be used.

(elastomer)
The elastomer preferably contains a styrene unit as a structural unit of the main chain, and the "styrene unit" may have a substituent. Examples of substituents include alkyl groups having 1 to 5 carbon atoms, alkoxy groups having 1 to 5 carbon atoms, alkoxyalkyl groups having 1 to 5 carbon atoms, acetoxy groups, and carboxyl groups. Moreover, it is more preferable that the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less. Furthermore, the elastomer preferably has a weight average molecular weight within the range of 10,000 or more and 200,000 or less.

If the styrene unit content is in the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, the hydrocarbon solvent described later is used. , the first adhesive layer can be removed more easily and quickly. In addition, since the styrene unit content and weight average molecular weight are within the above ranges, resist solvents (such as PGMEA, PGME, etc.) and acids (hydrogen fluoride acid, etc.) and alkali (TMAH, etc.).

The elastomer may be further mixed with the above-mentioned (meth)acrylic acid ester.

Also, the content of styrene units is more preferably 17% by weight or more, and more preferably 40% by weight or less.

A more preferable range of the weight average molecular weight is 20,000 or more, and a more preferable range is 150,000 or less.

As the elastomer, various elastomers can be used as long as the content of styrene units is in the range of 14% by weight or more and 50% by weight or less and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less. can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer (SBS), styrene-butadiene-butylene-styrene block copolymer (SBBS). , and hydrogenated products thereof, styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene- Propylene-styrene block copolymer (SEEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer in which the styrene block is reactively crosslinked (Septon V9461 (manufactured by Kuraray Co., Ltd.)), styrene block in which the styrene block is reactively crosslinked-styrene-ethylene-butylene- A styrene block copolymer (Septon V9827 (manufactured by Kuraray Co., Ltd.) having a reactive polystyrene-based hard block) or the like having a styrene unit content and a weight average molecular weight within the ranges described above can be used.

Among elastomers, hydrogenated products are more preferable. If it is a hydrogenated product, the stability against heat is improved, and deterioration such as decomposition or polymerization is less likely to occur. It is also more preferable from the viewpoint of solubility in hydrocarbon solvents and resistance to resist solvents.

Further, among elastomers, those having styrene block polymers at both ends are more preferable. This is because by blocking both ends with styrene, which has high thermal stability, higher heat resistance is exhibited.

More specifically, the elastomer is more preferably a hydrogenated block copolymer of styrene and a conjugated diene. Stability against heat is improved, and deterioration such as decomposition and polymerization hardly occurs. In addition, by blocking styrene, which has high thermal stability, at both ends, higher heat resistance is exhibited. Furthermore, it is more preferable from the viewpoint of solubility in hydrocarbon solvents and resistance to resist solvents.

Examples of commercially available products that can be used as the elastomer contained in the adhesive constituting the adhesive layer 61 include "Septon (trade name)" manufactured by Kuraray Co., Ltd., "Hibler (trade name)" manufactured by Kuraray Co., Ltd., and Asahi Kasei Corporation. "Tuftech (trade name)" manufactured by JSR Corporation, "Dynaron (trade name)" manufactured by JSR Corporation, and the like.

The content of the elastomer contained in the adhesive constituting the adhesive layer 61 is preferably in the range of 50 parts by weight or more and 99 parts by weight or less, preferably 60 parts by weight or more, with the total amount of the adhesive composition being 100 parts by weight. , 99 parts by weight or less, and most preferably 70 parts by weight or more and 95 parts by weight or less. By setting the thickness within these ranges, the wafer and the support can be preferably bonded together while maintaining the heat resistance.

Also, the elastomer may be a mixture of multiple types. In other words, the adhesive that forms the adhesive layer 61 may contain multiple types of elastomers. At least one of the plurality of types of elastomers should contain a styrene unit as a structural unit of the main chain. At least one of the plurality of types of elastomer has a styrene unit content of 14% by weight or more and 50% by weight or less, or a weight average molecular weight of 10,000 or more and 200,000 or less. Anything within the range is within the scope of the present invention. In addition, when the adhesive constituting the adhesive layer 61 contains a plurality of types of elastomers, the content of styrene units may be adjusted so that it is within the above range as a result of mixing. For example, Septon 4033 of Septon (trade name) manufactured by Kuraray Co., Ltd. having a styrene unit content of 30% by weight and Septon 2063 of Septon (trade name) having a styrene unit content of 13% by weight at a weight ratio of 1 When mixed in pairs, the styrene content of the total elastomer contained in the adhesive is 21-22% by weight, thus 14% by weight or more. Further, for example, if a styrene unit content of 10% by weight and a styrene unit content of 60% by weight are mixed at a weight ratio of 1:1, the content is 35% by weight, which is within the above range. The present invention may take such a form. Most preferably, the plurality of types of elastomers contained in the adhesive constituting the adhesive layer 61 all contain styrene units within the above ranges and have weight average molecular weights within the above ranges.

Note that it is preferable to form the adhesive layer 61 using a resin other than a photocurable resin (for example, a UV curable resin). By using a resin other than the photocurable resin, it is possible to prevent residues from remaining around the minute unevenness of the supported substrate after peeling or removal of the adhesive layer 61 . In particular, the adhesive constituting the adhesive layer 61 is preferably one that dissolves in a specific solvent rather than one that dissolves in all solvents. This is because the adhesive layer 61 can be removed by dissolving it in a solvent without applying physical force to the substrate S. FIG. When removing the adhesive layer 61 , the adhesive layer 61 can be easily removed even from the substrate S whose strength has decreased without damaging or deforming the substrate S.

(dilution solvent)
As the diluting solvent used when forming the adhesive layer 61, for example, decahydronaphthalene (boiling point 185° C. to 195° C.) or butyl acetate (boiling point 126° C.) can be used. Other diluent solvents include linear hydrocarbons such as hexane, heptane, octane, nonane, methyloctane, decane, undecane, dodecane, and tridecane, and branched hydrocarbons having 4 to 15 carbon atoms, such as cyclohexane. , cyclic hydrocarbons such as cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpine, 1,8-terpine, bornane, norbornane, pinane, thujan, kalan, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpinen-1-ol, terpinen-4- Terpene solvents such as ol, dihydroterpinyl acetate, 1,4-cineol, 1,8-cineol, borneol, carvone, ionone, thujone, camphor, d-limonene, l-limonene, dipentene; Lactones; ketones such as acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentyl ketone, methyl isopentyl ketone, 2-heptanone; polyhydric alcohols such as ethylene glycol, diethylene glycol, propylene glycol and dipropylene glycol; Compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, monomethyl ether, monoethyl ether, and monopropyl of the above polyhydric alcohols or compounds having an ester bond Derivatives of polyhydric alcohols such as compounds having ether bonds such as ethers, monoalkyl ethers such as monobutyl ether, or monophenyl ethers (among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) is preferred); cyclic ethers such as dioxane, methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethoxy Esters such as ethyl propionate; anisole, ethyl benzyl ether, cresyl methyl Aromatic organic solvents such as ether, diphenyl ether, dibenzyl ether, phenetol and butylphenyl ether can be used.

(other ingredients)
The adhesive that constitutes the adhesive layer 61 may further contain other miscible substances as long as the essential properties are not impaired. For example, various commonly used additives such as additional resins, plasticizers, adhesion aids, stabilizers, colorants, thermal polymerization inhibitors and surfactants for improving the performance of the adhesive can be further used. can.

FIG. 12 is a flow chart showing the operation in step S02. As shown in FIG. 12, in step S02, first, the substrate S on which the adhesive layer 61 is formed is carried into the first chamber 11 of the heating device 100 (step S21). In this case, the shutter 20 of the heating device 100 is placed at the open position P1, and the substrate S is carried into the first chamber 11 through the substrate opening 14a by a substrate transfer mechanism (not shown). The substrate transport mechanism causes the substrate S to wait at a position above the upper ends of the fixing pins 17c.

In this state, by driving the pin drive section 19c, the plurality of pins 19a are projected from the upper surface 17a of the heating section 17, the upper ends of the plurality of pins 19a are moved above the upper ends of the fixing pins 17c, and the substrate S is moved. support. After the substrate S is supported by the plurality of pins 19a, the substrate transport mechanism releases the substrate S from being held. By this operation, the substrate S is transferred from the substrate transfer mechanism onto the plurality of pins 19a. After that, the substrate transfer mechanism retreats to the outside of the chamber 10 through the substrate opening 14a. Further, the pin driving section 19c lowers the plurality of pins 19a to place the substrate S on the upper ends of the fixing pins 17c.

Next, the substrate S carried into the first chamber 11 is heated by the heating unit 17 (step S22). FIG. 11B is a diagram showing an example of the operation in step S02. In step S22, for example, the substrate S may be heated multiple times at different temperatures. For example, when the substrate S is heated a plurality of times, the temperature for heating the substrate S is set to be higher in later heatings. More specifically, when the substrate S is heated multiple times, the first heating is set to a temperature that is one-third to one-half of the lowest boiling point of the solvent (solvent) contained in the adhesive. . It is then set to a temperature equivalent to and/or higher than the boiling point. By heating the adhesive layer 61 in this manner, the solvent contained in the adhesive layer 61 is vaporized and the adhesive layer 61 is dried as shown in FIG. 11B.
It should be noted that the "temperature of 1/3 to 1/2 of the boiling point" in this step S22 is "X/3 [°C] when the lowest boiling point of the solvent is expressed as X [°C] in Celsius temperature. to X/2 [° C.] temperature” region. do.
In addition, the “temperature equivalent to the boiling point” typically refers to a temperature range of X±15[° C.].
The temperature employed as X is, for example, 80°C to 240°C, preferably 100°C to 220°C, more preferably 110°C to 200°C.

When heating the adhesive layer 61, the heating device 100 operates the suction unit 30 to suck the gas in the first chamber 11 from the suction port 16a provided in the first chamber 11 (step S23). By this operation, the outside air A of the chamber 10 flows into the second chamber 12 through the lifting opening 14b. Outside air A is introduced into the first chamber 11 through a gap K (introduction path). The outside air A introduced into the first chamber 11 flows through the above-described path to the suction port 16a and is discharged to the outside of the chamber 10 from the suction port 16a.

The outside air A discharged to the outside of the chamber 10 is discharged to the outside of the cover 40 by the discharge device 50 of the cover 40 . The solvent evaporated from the adhesive layer 61 due to the heating of the substrate S flows along the lower surface of the upper heating unit 18 toward the edge of the substrate S, mixes with the flow of the outside air A, and flows out of the chamber 10 through the suction port 16a. Ejected. When heating the substrate S, the substrate S may be heated using the upper heating unit 18 in addition to the heating unit 17 .

After the heat treatment is finished, the substrate S is unloaded from the chamber 10 . In this case, in the first chamber 11, the plurality of pins 19a are raised by the pin drive section 19c to receive the substrate S from the fixed pins 17c at the upper ends of the pins 19a, and the substrate S is placed at the position to be transferred to the substrate transport mechanism. After that, for example, the shutter drive unit 23 moves the shutter 20 to the open position P1, and the substrate transfer mechanism waiting outside the chamber 10 is moved into the first chamber 11, and the substrate S placed on the pins 19a is moved. to the substrate transfer mechanism. After that, the pin driving section 19 c accommodates the plurality of pins 19 a in the through holes 17 b of the heating section 17 . Further, the substrate transport mechanism that has received the substrate S moves to the outside of the first chamber 11 from the substrate opening 14a while holding the substrate S. As shown in FIG. By this operation, the substrate S after the heat treatment is unloaded from the chamber 10 and a new substrate S can be loaded into the first chamber 11 .

Next, in the flow chart shown in FIG. 10, the process on the support G side will be described. FIG. 13A is a diagram showing an example of the operation in step S03. In step S03, a separation layer is formed on the support G by a film forming method such as CVD. In addition, in step S03, as shown in FIG. 13A, for example, the support G is held on a stage (not shown), and a liquid for forming the separation layer 62 on the formation surface Ga of the support G is supplied from a nozzle or the like. Exhale body. Moreover, in this step S03, a slit nozzle or the like can also be used as the nozzle described above. In this case, a mode in which the separation layer 62 is formed on the forming surface Ga of the support G by relatively moving the stage and the slit nozzle can be adopted. As the support G, for example, a circular or substantially circular semiconductor wafer having a thickness of 600 to 800 μm is used. The thickness of the semiconductor wafer is arbitrary. Also, instead of the semiconductor wafer, the support G may be a glass plate having a thickness of 500 to 1500 μm, for example. The shape of the support G is set according to the shape of the substrate S. As shown in FIG.

Details of the separation layer will be described below with reference to FIG. 13(A) as an example.
The isolation layer 62 is made of, for example, a material that changes in quality by absorbing light. Deterioration of the separation layer 62 means a state in which the separation layer 62 can be destroyed by receiving a slight external force, or a state in which the adhesive force between the separation layer 62 and a layer in contact with the separation layer 62 is reduced. The separation layer 62 absorbs light and changes its properties, thereby lowering its strength or adhesiveness to the support compared to before the change. Therefore, the degraded separation layer 62 is destroyed or separated from the support G by applying a slight external force or the like.

The degeneration of the separation layer 62 is caused by (exothermic or non-exothermic) decomposition, cross-linking, change in steric configuration, or dissociation of functional groups due to the energy of the absorbed light (and accompanying curing, degassing, contraction or expansion), and the like. Alteration of the separation layer 62 occurs as a result of absorption of light by the material forming the separation layer 62 . Therefore, the type of alteration of the separation layer 62 can change according to the type of material forming the separation layer 62 . Moreover, the separation layer 62 is not limited to a material that changes in quality by absorbing light. For example, it may be a material that is denatured by absorbing heat applied without using light, or a material that is denatured by other solvents or the like.

The thickness of the separation layer 62 is, for example, more preferably 0.05 to 50 μm, more preferably 0.3 to 1 μm. If the thickness of the separation layer 62 is within the range of 0.05 to 50 μm, it can be removed by short-time light irradiation, low-energy light irradiation, short-time heating, or short-time immersion in a solvent. , can cause the desired alteration in the separation layer 62 . Moreover, it is particularly preferable that the thickness of the separation layer 62 is within the range of 1 μm or less from the viewpoint of productivity.

The separation layer 62 that is altered by the energy of the absorbed light will be described below. The separation layer 62 is preferably made of only a material having a light-absorbing structure. An isolation layer 62 may be formed. In addition, it is preferable that the surface of the separation layer 62 facing the adhesive layer 61 is flat (no irregularities are formed). It becomes possible to stick evenly.

The separation layer 62 may change in quality by absorbing the light irradiated from the laser. That is, the light with which the separation layer 62 is irradiated to alter the properties of the separation layer 62 may be the light irradiated from a laser. Examples of lasers that emit light to irradiate the separation layer 62 include YAG lasers, ruby lasers, glass lasers, YVO4 lasers, LD lasers, solid-state lasers such as fiber lasers, liquid lasers such as dye lasers, CO2 lasers, and excimer lasers. , Ar laser, He—Ne laser, and other gas lasers, semiconductor lasers, free electron lasers, and other laser beams, and non-laser beams. The laser that emits the light to irradiate the separation layer 62 can be appropriately selected according to the material that constitutes the separation layer 62, and emits light of a wavelength capable of altering the material that constitutes the separation layer 62. It is only necessary to select a laser that

FIG. 13B is a diagram showing an example of the operation in step S04. FIG. 13B shows an example of the operation of reversing the support G. FIG. As shown in FIG. 13B, in step S04, for example, the support G is held by a holding portion of a reversing device (not shown). After that, by inverting the holding portion around a predetermined axis, the support G is inverted so that the formation surface Ga on which the separation layer 62 is formed faces downward. Note that the reversing device may have any configuration as long as it can reverse the support G.

In the flowchart shown in FIG. 10, steps S01 and S02, which are processes on the substrate S side, and steps S03 and S04, which are processes on the support body G side, may be performed in whole or in part in parallel. Alternatively, steps S01, S02, S03, and S04 may be performed in chronological order.

FIG. 14 is a diagram showing an example of the operation in step S05. FIG. 14 shows an example of the operation of attaching the substrate S and the support G. As shown in FIG. As shown in FIG. 14, in step S05, the substrate S and the support G are bonded together by a bonding device (not shown). The pasting device may be included in the reversing device used in step S04, or may be a separate device from the reversing device. The bonding apparatus bonds the substrate S and the support G by bonding the adhesive layer 61 of the substrate S and the separation layer 62 of the support G together. In this case, the substrate S with the adhesive layer 61 facing upward and the separation layer 62 with the separation layer 62 reversed downward in step S04 are aligned so as to face each other, and the substrate S and the support G are brought close to each other. to paste the two together. The bonding device may have any configuration as long as it can bond the substrate S and the support G together.

FIG. 15 is a diagram showing another example of the substrate processing system according to this embodiment. FIG. 15 shows an example of arrangement of units in the substrate processing system 200B. In addition, in FIG. 15, the direction in a figure is demonstrated using the XYZ coordinate system. In this XYZ coordinate system, the vertical direction is the Z direction, and the horizontal directions are the X and Y directions. Further, for each of the X, Y, and Z directions, the direction indicated by the arrow is called the + direction (eg, +X direction), and the opposite direction is called the - direction (eg, -X direction).

A substrate processing system 200B shown in FIG. 15 processes a substrate S. As shown in FIG. The substrate processing system 200B includes a substrate loading/unloading part CS used for loading and unloading the substrate S, a transport part TR for transporting the substrate S, a cooling part CA for cooling the substrate S, and an adhesive for the substrate S. A coating unit SC for coating, a cleaning unit CC for cleaning the substrate S, a heating unit BP for heating the substrate S, a vacuum heating unit VB for heating the substrate S under reduced pressure, and a pre-aligner for aligning the substrate S. It includes a PA, a load lock chamber LL for temporarily accommodating the substrate S, a bonding section BO for bonding the substrate S and the support G, and a power supply section EB for supplying power to the entire system. In the substrate processing system 200B, the heating part BP includes the heating device 100 described above. Further, the coating section SC includes the coating device 110 described above. Also, the pasting section BO includes the above-described pasting device 120 .

The substrate loading/unloading units CS are provided at the -Y side end of the substrate processing system 200B, and are arranged at a plurality of, for example, four locations in the X direction. The number of substrate loading/unloading sections CS is not limited to four, and may be three or less or five or more. By alternately using a plurality of (four) substrate loading/unloading units CS, it is possible to improve efficiency of loading/unloading substrates S into/from the substrate processing system 200B.

The transport unit TR has a first transport unit TR1 and a second transport unit TR2. The first transport unit TR1 transports the substrate S, the support G, or a laminate of both over a wide range in the X direction. The first transport unit TR1 has, for example, a transport robot (not shown). The transport robot can move in the X direction inside the first transport unit TR1. A load lock chamber LL (first load lock chamber LL1) is arranged on the -X side of the first transport unit TR1, and a power supply unit EB is arranged on the +X side. A pre-aligner PA, a cooling unit CA, a heating unit BP (seventh heating unit BP7 and eighth heating unit BP8), and a load lock chamber LL (second load lock chamber LL2) are arranged on the +Y side of the first transport unit TR. be done. In the cooling part CA, the unit in which the cooling plate is arranged and the unit in which the cooling area is arranged overlap each other in the Z direction. The first transport part TR1 transports the substrate S and the like between the substrate loading/unloading part CS, the load lock chamber LL, the pre-aligner PA, the cooling part CA, and the heating part BP.

The second transport part TR2 is arranged on the +Y side of the cooling part CA, and transports the substrate S, the support G, etc. over a wide range in the Y direction. The second transport unit TR2 has a transport robot (not shown). The transport robot can move in the Y direction inside the second transport unit TR2. A maintenance unit MN, a coating unit SC, and a cleaning unit CC are arranged on the -X side of the second transport unit TR2. On the +X side of the second transport section TR2, the maintenance section MN, the heating section BP (the first heating section BP1 to the fourth heating section BP4, the fifth heating section BP5 to the sixth heating section BP6), and the vacuum heating section VB are arranged. be done. Note that the first heating part BP1 to the fourth heating part BP4 are arranged to overlap in the Z direction. Also, the fifth heating part BP5 to the sixth heating part BP6 and the vacuum heating part VB are arranged to overlap in the Z direction. The second transport part TR2 transports the substrate S and the like between the coating part SC, cleaning part CC, heating part BP (first heating part BP1 to sixth heating part BP6), and vacuum heating part VB.

The substrate S and the support G carried in from the substrate loading/unloading part CS are processed by the substrate processing method according to the present embodiment at each transport destination transported by the first transport part TR1 or the second transport part TR2. The laminated body in which S and the supporting body G are attached is carried into the substrate loading/unloading part CS by the first transport part TR1. In this way, the substrate processing system 200B has the devices laid out so that the substrate processing method according to the present embodiment can be efficiently performed while suppressing an increase in the size of the system.

As described above, according to the heating apparatus 100, the substrate processing method, and the substrate processing systems 200, 200A, and 200B according to the present embodiment, when the adhesive applied to the substrate S is heated, the flow of the gas is directed to the substrate S. Since it is possible to suppress crossing over the top in one direction, it is possible to suppress variations in the film thickness of the adhesive layer formed on the substrate S. As a result, the substrate S and the support G can be attached with high accuracy.

Moreover, the present invention is not limited to the above description, and various modifications can be made without departing from the gist of the present invention.

A... Outside air G... Support body K... Gap P1... Open position P2... Closed position S... Substrate 17... Heating units 200, 200A, 200B... Substrate processing system DESCRIPTION OF SYMBOLS 10... Chamber 11... First chamber 12... Second chamber 13... Partition part 14... Side wall 14a... Substrate opening part 14b... Lifting opening part 16... Ceiling portion 16a Suction ports 17b, 21d Through hole 17c Fixing pin 18 Top heating unit 19 Board elevating unit 19a Pin 19c Pin driving unit 20 Shutter 23 Shutter drive unit 23a Elevation drive unit 23b Horizontal drive unit 30 Suction unit 31 Upper heating unit 40 Cover 50 Discharge device 100 Heating device 110 Coating device 120 Pasting device

Claims (19)

A heating device comprising: a chamber for storing and heating a substrate coated with an adhesive; and a suction unit for sucking the inside of the chamber,
The chamber is
a first chamber containing the substrate and having a side wall capable of regulating gas flow with the outside on the side of the substrate;
a second chamber disposed below the first chamber, allowing gas communication with the outside, and having a heating unit for heating the substrate;
The first chamber and the second chamber are arranged so as to regulate the flow of gas between the first chamber and the second chamber at least in a region outside the substrate accommodated in the first chamber in plan view. and a partition section for partitioning the
The suction unit sucks gas in the first chamber from a suction port provided in the first chamber ,
The first chamber includes an opening provided in the side wall for loading and unloading the substrate, and a shutter for opening and closing the opening,
The suction port is provided in the ceiling of the first chamber,
A heating device , wherein an introduction path for introducing outside air into the first chamber is arranged inside the substrate accommodated in the first chamber in a plan view at a boundary between the first chamber and the second chamber. . 2. The heating device according to claim 1, wherein said heating section is arranged so as to partition said first chamber and said second chamber together with said partition section. The first chamber has an upper heating portion that heats the substrate,
3. The heating device according to claim 1, wherein said upper heating section is arranged between said suction port and said substrate. The heating device according to any one of claims 1 to 3, wherein the suction port is arranged in the center or substantially the center of the substrate accommodated in the first chamber in plan view. a plurality of pins on which the substrate can be placed and which can be lifted;
5. The heating device according to any one of claims 1 to 4 , further comprising a pin driving section that raises and lowers the plurality of pins. 6. The heating device according to claim 5 , wherein the periphery of the pin forms at least part of the introduction path. 7. The heating device according to any one of claims 1 to 6 , comprising a cover surrounding a space in which said chamber is installed, and an exhaust device for exhausting gas in said cover. A substrate processing system comprising the heating device according to claim 1 . 9. The substrate processing system according to claim 8 , comprising a plurality of said heating devices that heat said substrate at different temperatures. 10. The substrate processing system according to claim 8 , further comprising a bonding device for bonding a support to said substrate after being heated by said heating device. 11. The substrate processing system according to any one of claims 8 to 10 , further comprising a coating device that applies an adhesive to said substrate before being heated by said heating device. A method of processing a substrate with an adhesive applied thereto using a chamber for containing and heating the substrate, comprising:
The chamber is
a first chamber containing the substrate and having a side wall capable of regulating gas flow with the outside on the side of the substrate;
a second chamber disposed below the first chamber, allowing gas communication with the outside, and having a heating unit for heating the substrate;
The first chamber and the second chamber are arranged so as to regulate the flow of gas between the first chamber and the second chamber at least in a region outside the substrate accommodated in the first chamber in plan view. and a partition section for partitioning the
housing the substrate in the first chamber;
heating the substrate accommodated in the first chamber by the heating unit;
sucking the gas in the first chamber from a suction port provided in the first chamber ;
The gas in the first chamber is sucked from the suction port provided in the ceiling of the first chamber, and the boundary between the first chamber and the second chamber is the first chamber in plan view. A substrate processing method , comprising introducing outside air into the first chamber from an introduction path arranged inside the housed substrate. 13. The substrate processing method according to claim 12 , comprising sucking the gas in the first chamber from the suction port arranged at the center or substantially the center of the substrate accommodated in the first chamber in a plan view. 14. The substrate processing method according to claim 12 , further comprising using an exhaust device to exhaust gas within a cover surrounding a space in which said chamber is installed. 15. A substrate processing method according to any one of claims 12 to 14 , comprising heating the substrate multiple times at different temperatures. 16. The substrate processing method according to claim 15 , wherein when the substrate is heated a plurality of times, the later the substrate is heated, the higher the temperature for heating the substrate. A method of processing a substrate with an adhesive applied thereto using a chamber for containing and heating the substrate, comprising:
The chamber is
a first chamber containing the substrate and having a side wall capable of regulating gas flow with the outside on the side of the substrate;
a second chamber disposed below the first chamber, allowing gas communication with the outside, and having a heating unit for heating the substrate;
The first chamber and the second chamber are arranged so as to regulate the flow of gas between the first chamber and the second chamber at least in a region outside the substrate accommodated in the first chamber in plan view. and a partition section for partitioning the
housing the substrate in the first chamber;
heating the substrate accommodated in the first chamber by the heating unit;
sucking the gas in the first chamber from a suction port provided in the first chamber;
heating the substrate multiple times at different temperatures;
When the substrate is heated multiple times, the first heating is set to a temperature that is one-third to one-half of the lowest boiling point of the solvent contained in the adhesive. Method. 18. The substrate processing method according to claim 17, wherein when the substrate is heated a plurality of times, the later the substrate is heated, the higher the temperature for heating the substrate. 19. The substrate processing method according to any one of claims 12 to 18 , comprising attaching a support to the substrate after it has been heated.

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