TW202114011A - Heater, substrate processing system, and substrate processing method - Google Patents

Abstract

To stick a substrate and a support with high accuracy by suppressing occurrence of nonuniformity in thickness of an adhesive layer in a case where an adhesive applied to the substrate is heated. A heater 100 comprises: a chamber 10 for housing and heating a substrate S to which an adhesive is applied; and a suction part 30 which sucks the inside of the chamber 10. In the heater 100, the chamber 10 includes: a first chamber 11 in which the substrate S is housed and which includes a sidewall 14 capable of regulating circulation of gas with the outside at a lateral side of the substrate S; a second chamber 12 which is disposed at a lower side of the first chamber 11, in which the circulation of gas is allowed with the outside and which includes a heating part 17 for heating the substrate S; and a partition part 13 which separates the first chamber 11 and the second chamber 12 so as to regulate the circulation of gas between the first chamber 11 and the second chamber 12 in a region outside of the substrate S housed in the first chamber 11 at least in a planar view. The suction part 30 sucks gas inside of the first chamber 11 from a suction port 16a which is provided in the first chamber 11.

Description

Heating device, substrate processing system, and substrate processing method

The present invention relates to a heating device, a substrate processing system, and a substrate processing method.

Electronic devices such as semiconductor devices are pursuing miniaturization and thinning. When manufacturing such an electronic device, it is known that, for example, a substrate having a plurality of electronic components is bonded together with a support such as glass to form a laminate, and then the substrate is processed in the state of the laminate (for example, refer to the patent Literature 1). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2014-170847 A

[The problem to be solved by the invention]

In the laminate described in Patent Document 1, the substrate and the support are adhered through the adhesive layer. This laminate is formed by first applying an adhesive to the substrate, then heating the substrate to volatilize the solvent in the adhesive, and then adhering the substrate and the support. The heating of the substrate to which the adhesive is applied is performed by, for example, storing the substrate after applying the adhesive in a vacuum chamber, and evacuating the vacuum chamber while using a heater in the vacuum chamber or the like. At this time, in the vacuum chamber, gas flows due to exhaust gas. If the gas flows across the substrate surface in one direction, the thickness of the adhesive layer after the solvent volatilizes may be uneven. The unevenness of the thickness of the subsequent layer becomes an important cause of the decrease in the adhesion accuracy between the substrate and the support, and it becomes impossible to perform the subsequent processing of the laminated body (substrate) with high accuracy.

An object of the present invention is to provide a heating device, a substrate processing system, and a substrate processing method that can prevent unevenness in the thickness of the adhesive when heating an adhesive applied to a substrate, and adhere a substrate and a support with high precision. [Means for problem solving]

The heating device related to the first aspect of the present invention is provided with a vacuum chamber for accommodating and heating the substrate to which the adhesive is applied, and evacuates the exhaust part in the vacuum chamber; the vacuum chamber has: accommodating the substrate, and The side of the substrate has a first chamber with a side wall that can adjust the flow of gas between the substrate and the outside. The second chamber is arranged below the first chamber and allows gas to flow between the substrate and the outside. The second chamber has a heating unit that heats the substrate. Chamber, and a plan view that separates the first chamber and the second chamber at least in an area outside the substrate housed in the first chamber in a manner that regulates the flow of gas between the first chamber and the second chamber Partitioning part; the air extraction part, the air in the first chamber is extracted from the air extraction port provided in the first chamber.

The substrate processing system related to the second aspect of the present invention includes the heating device related to the first aspect of the present invention.

In the substrate processing method related to the third aspect of the present invention, the substrate is processed by using a vacuum chamber for heating the substrate to which the adhesive is applied; the vacuum chamber includes: accommodating the substrate on the side of the substrate The first chamber has a side wall that can regulate the flow of gas between it and the outside, is arranged below the first chamber and allows gas to flow between it and the outside, and the second chamber has a heating part for heating the substrate, and a plan view At least a partition between the first chamber and the second chamber in a region outside the substrate housed in the first chamber to regulate the flow of gas between the first chamber and the second chamber; including : The substrate is accommodated in the first chamber, the substrate accommodated in the first chamber is heated by the heating unit, and the gas in the first chamber is evacuated from an exhaust port provided in the first chamber. [Effects of Invention]

According to the present invention, when the adhesive applied to the substrate is heated, the thickness of the adhesive can be prevented from being uneven, and the substrate and the support can be adhered with high precision.

Hereinafter, the implementation mode will be described with reference to the drawings. However, the present invention is not limited by the embodiments described below. In addition, in order to explain the implementation mode, the drawings are enlarged partly or changed to an appropriate scale for emphasizing the description. Hereinafter, the direction perpendicular to the horizontal plane is regarded as the up and down direction. Among the directions parallel to the horizontal plane, the direction in which the substrate S is carried in and out of the vacuum chamber 10 is the front and rear direction, the side where the substrate S is carried in and out is the front side, and the opposite side of the front side is the rear side.

FIG. 1 is a cross-sectional view of an example of a heating device 100 related to this embodiment. As shown in FIG. 1, the heating device 100 is provided with a vacuum chamber 10, an exhaust unit 30, a cover 40, and an exhaust device 50. The vacuum chamber 10 is placed, for example, on a floor parallel to a horizontal plane, and stores and heats the substrate S to which the adhesive is applied. In this embodiment, the substrate S forms a plurality of electronic components. Electronic parts include, for example, wafers formed using semiconductors or the like. In addition, the substrate S may be a structure in which a plurality of electronic components are held by a plastic film.

The vacuum chamber 10 has: a first chamber 11, a second chamber 12, a partition 13, a side wall 14, a bottom 15, a chamber top 16, a heating part 17, an upper heating part 18, a substrate lifting part 19, and a shutter 20 . The first chamber 11 is a space defined by the side wall 14, the chamber top 16, the upper surface 17 a of the heating part 17, and the partition part 13. The first chamber 11 stores the substrate S. The second chamber 12 is a space defined by the side wall 14, the bottom 15, the heating part 17, and the partition part 13. The main body portion of the heating unit 17 is arranged in the second chamber 12.

The partition 13 is provided to partition the first chamber 11 and the second chamber 12. The partition portion 13 is arranged so as to block the space between the side wall 14 and the heating portion 17. With this configuration, the partition 13 adjusts the gas flow between the first chamber 11 and the second chamber 12 at least in the outer region of the substrate S accommodated in the first chamber 11 in a plan view. On the outer peripheral side of the partition 13, a bending portion 13 a that bends downward is provided. The bent portion 13a is fixed to the side wall 14 by a fixing member not shown. The partition portion 13 may be provided in a state where a sealing member (not shown) is sandwiched between the flexure portion 13a and the side wall 14. The inner peripheral side of the partition part 13 is fixed to the flange part 21c of the frame 21 mentioned later by the fixing member which is not shown in figure.

The side wall 14 has a rectangular frame shape in plan view. The side wall 14 has an opening (opening) 14a for a substrate and an opening 14b for raising and lowering. The substrate opening 14a is provided so as to communicate with the inside and outside of the first chamber 11, and is provided in a cross-sectional shape through which the substrate S can pass. The substrate S is carried in or out of the vacuum chamber 10 (in the first chamber 11) through the substrate opening 14a. The lift opening 14b is provided in communication with the inside and outside of the second chamber 12, and is in a state where a part of the substrate lift 19 penetrates. The lift opening 14b is provided on the side wall 14 opposite to the side wall 14 on which the substrate opening 14a is provided. The vertical direction of the lift opening 14b is set to correspond to the distance by which a part of the substrate lift 19 is lifted and lowered.

The bottom 15 is, for example, a rectangular shape in a plan view, and is placed on a base or the like having a surface parallel to a horizontal plane such as the floor. The bottom 15 is arranged to be connected to the lower end of the side wall 14 to seal the lower side of the second chamber 12. Between the side wall 14 and the bottom 15, a sealing member or the like not shown may be sandwiched, or a sealing material may be filled or pasted on the connecting part of the side wall 14 and the bottom 15. On the bottom 15, a plurality of soil platform parts 22 described later are placed. Each soil platform 22 may be fixed to the bottom 15 or unfixed.

The chamber ceiling 16 is, for example, a rectangular shape in a plan view, and is connected to the upper end of the side wall 14 to seal the upper part of the first chamber 11. The top 16 of the chamber is parallel to the bottom 15. The ceiling 16 is supported in a suspended state of the upper heating part 18 described later. That is, a gap (space) D is provided between the lower surface of the chamber ceiling 16 and the upper surface of the upper heating part 18. The top 16 of the chamber has a suction port 16a. The gas system in the first chamber 11 is discharged through the suction port 16a. The suction port 16a is provided, for example, in a plan view, at a position overlapping the center or substantially the center of the substrate S accommodated in the first chamber 11.

The heating unit 17 heats the substrate S contained in the first chamber 11 from below. The heating part 17 is, for example, a disk-shaped hot plate in a plan view, and has a larger diameter than the substrate S accommodated in the first chamber 11 (see FIG. 2). The upper surface 17a of the heating part 17 is flat and parallel to the bottom 15 and the top 16 of the chamber, for example. The heating portion 17 has a through hole 17b for arranging a pin 19a of the substrate lifting portion 19 described later. The through hole 17b is provided by penetrating the heating part 17 up and down. In this embodiment, three through holes 17b are provided, for example. The through hole 17b is used as an introduction path for introducing external air into the first chamber 11.

FIG. 2 is a plan view showing an example of the interior of the first chamber 11. As shown in FIG. 2, the three through-holes 17b are arranged one at each position corresponding to each vertex of the equilateral triangle whose center position of the heating part 17 becomes the center of gravity position in a plan view. Alternatively, the three through holes 17b are arranged at equal intervals on the circumference centered on the center position of the heating part 17. In addition, the through holes 17b are provided corresponding to the pins 19a of the substrate elevating portion 19 described later, and when there are four or more pins 19a, four or more locations are provided corresponding to the pins 19a.

On the upper surface 17a of the heating part 17, a fixing pin 17c is provided. The upper end of the fixing pin 17c is used to mount the substrate S. In this embodiment, four fixing pins 17c are arranged, for example. The four fixing pins 17c are arranged at the position of the center of the heating portion 17 in plan view and the positions corresponding to the three vertices of the equilateral triangle with the center of the heating portion 17 as the center of gravity, and a total of four are provided. The three fixing pins 17c other than the fixing pin 17c provided at the center of the heating part 17 are arranged at equal intervals on a circumference centered on the center position of the heating part 17. The circumference on which the three fixing pins 17c are arranged is different from the circumference on which the aforementioned three through holes 17b (three pins 19a) are arranged, but it may be arranged on the same circumference as the fixing pins 17c and the through holes 17b. The upper end of the fixing pin 17c is set lower than the upper end when the pin 19a mentioned later is raised.

The heating unit 17 is supported by a frame 21 arranged in the second chamber 12. The frame 21 has a frame bottom portion 21a, a frame side portion 21b, and a flange portion 21c. The bottom part 21a of the frame has a disc shape and is supported by a plurality of soil platform parts 22. At the bottom 21a of the frame, there are a plurality of through holes 21d. The through-hole 21d communicates with the through-hole 17b of the heating part 17, and the pin 19a is arrange|positioned. The frame side portion 21b is provided cylindrically along the outer circumference of the frame bottom portion 21a. The flange portion 21c is provided so as to protrude outward from the upper end of the frame side portion 21b. The heating unit 17 is supported by the frame 21 in a state of being housed in the frame 21.

The upper heating part 18 is provided in the first chamber 11 and heats the substrate S contained in the first chamber 11 from above. For the upper heating part 18, a hot plate or the like is used, for example. The upper heating part 18 is, for example, a disk-shaped hot plate in a plan view, and has a larger diameter than the substrate S accommodated in the first chamber 11. The upper heating part 18 is fixed in a suspended state from the ceiling 16 of the chamber, and is arranged above the substrate S. In this embodiment, the upper heating part 18 is disposed between the air suction port 16a and the substrate S. The upper heating part 18 is arranged in a state where a gap D is provided between the upper heating part 18 and the ceiling part 16 of the chamber. Therefore, when the air is sucked from the air extraction port 16a, the gas in the first chamber 11 flows through the gap D from the side edge side of the upper heating part 18 along the upper surface side, and then reaches the air extraction port 16a.

The substrate raising and lowering unit 19 raises and lowers the substrate S housed in the first chamber 11. The substrate raising and lowering portion 19 has a plurality of pins 19a, a pin support portion 19b that supports the plurality of pins 19a, and a pin driving portion 19c that raises and lowers the plurality of pins 19a. The pin 19a can mount the substrate S on the upper end. The pin 19a is used when the substrate S is placed on the fixed pin 17c or when the substrate S placed on the fixed pin 17c is received. The plural pins 19a are arranged one at each position corresponding to the three vertices of the equilateral triangle with the center of the heating portion 17 as the center of gravity in a plan view. The plurality of pins 19a are arranged in a state of penetrating the through hole 17b of the heating portion 17, and each of them can be raised and lowered within the through hole 17b. The plurality of pins 19a protrude from the upper surface 17a of the heating unit 17 into the first chamber 11 when ascending, and are submerged by the upper surface 17a of the heating unit 17 when descending.

As mentioned above, when the pin 19a rises, the upper end of the pin 19a will be higher than the upper end of the fixed pin 17c. Therefore, the substrate S placed on the pin 19a when the pin 19a is raised can be placed on the fixing pin 17c by the pin 19a being lowered. In addition, the board S placed on the fixing pin 17c can be received by the pin 19a ascending.

The outer diameter of each pin 19a is smaller than the inner diameter of the through hole 17b. Therefore, in a state where the plurality of pins 19a are inserted into the through holes 17b, a gap K is formed between the outer peripheral surface of the pin 19a and the inner peripheral surface of the through hole 17b. The first chamber 11 and the second chamber 12 are communicated through this gap K. The gap K is an introduction path for introducing external air into the first chamber 11. The size of the gap K can be arbitrarily set, and the size of the gap K can be adjusted by adjusting the outer diameter of the pin 19a or the inner diameter of the through hole 17b.

The pin support portion 19b has a plate shape, for example, and the lower ends of the plural pins 19a are fixed to the upper surface side. The pin support portion 19b is arranged on the lower side in the second chamber 12. The pin support part 19b is arrange|positioned so that the end part of a deep side protrudes to the exterior of the 2nd chamber 12 from the opening part 14b for raising/lowering. The pin support portion 19b can be raised and lowered in accordance with a guide such as a guide not shown, and can be raised and lowered integrally with the plurality of pins 19a. Since the plurality of pins 19a are fixed to one pin support portion 19b, the plurality of pins 19a can be raised and lowered at the same time or almost simultaneously by raising and lowering the pin support portion 19b.

The pin driving portion 19c raises and lowers the plurality of pins 19a by raising and lowering the pin supporting portion 19b. The pin driving part 19c is arranged outside the second chamber 12. The pin driving portion 19c has a driving source such as an air cylinder device and an electric motor, and the pin supporting portion 19b (pin 19a) is raised and lowered by the driving force of the driving source. In addition, the substrate raising and lowering portion 19 may have a structure of the raising and lowering pins 19a, and is not limited to the aforementioned structure. For example, a configuration that uses a drive source such as an electric motor to raise and lower each pin 19a through a rack and pinion mechanism or a gear train is also applicable.

The shutter 20 opens and closes the substrate opening 14a. Fig. 3 is a diagram showing a state in which the substrate opening 14a is opened. Fig. 4 is a diagram showing a state in which the opening 14a for the substrate is closed. And FIG. 4 shows an example of the operation of the shutter 20 and the shutter driving portion 23. As shown in FIG. FIG. 3 shows a state in which the shutter 20 is arranged in the open position P1. FIG. 4 shows a state in which the shutter 20 is arranged at the closed position P2.

As shown in FIG. 3 and FIG. 4, the shutter 20 is movable between the opening position P1 which opens the opening part 14a for substrates, and the closing position P2 which closes the opening part 14a for substrates. The shutter 20 uses a plate-shaped member set to a size that can close the opening 14a for the substrate. In the open position P1, the shutter 20 is retracted downward from the front-rear direction of the substrate opening 14a. In the closed position P2, the shutter 20 abuts against the peripheral edge of the substrate opening 14a to be sealed. In addition, the shutter 20 may be provided with a sealing member for airtight in a portion contacting the peripheral edge of the opening 14a for the substrate.

The shutter 20 is moved between the open position P1 and the closed position P2 by the shutter drive 23. The door drive unit 23 has an up-and-down drive unit 23a that moves the door 20 in the up-down direction (up and down), and a horizontal drive unit 23b that moves the door 20 in the front-rear direction (horizontal direction). For each of the lifting drive portion 23a and the horizontal drive portion 23b, for example, an air cylinder mechanism or the like is used. The up-and-down drive part 23a is provided with the guide part 23c extended in the up-down direction. The up-and-down drive part 23a is moved up and down along the guide part 23c. The up-and-down drive part 23a moves the shutter 20 to an upper position or a lower position.

The horizontal drive part 23b is provided in the up-and-down drive part 23a, and it moves up and down along the guide part 23c integrally with the up-and-down drive part 23a. The horizontal drive part 23b is equipped with the transmission member 23d which advances and retreats in the front-back direction. The transmission member 23d advances or retreats in the front-rear direction along the guide part 23e provided in the up-and-down drive part 23a. The shutter 20 is connected to the horizontal driving portion 23b through the transmission member 23d. The horizontal drive part 23b moves the shutter 20 toward the front side or the rear side by the forward or backward movement of the transmission member 23d.

As shown in FIG. 3, the shutter 20 can be placed in the open position P1 by disposing the shutter 20 on the lower side by the lift driving part 23a and disposing the shutter 20 on the front side by the horizontal driving part 23b. When the shutter 20 is arranged at the open position P1, the substrate opening 14a is opened. In this case, it is possible to carry in or carry out the substrate S in the first chamber 11 through the substrate opening 14a by, for example, a substrate transport mechanism not shown.

In addition, as shown in FIG. 4, the shutter 20 can be arranged at the closed position P2 by disposing the shutter 20 on the upper side by the up-and-down driving part 23a and disposing the shutter 20 by the horizontal driving part 23b on the rear side. When the shutter 20 is arranged at the closed position P2, the substrate opening 14a is closed. In this case, the conditioning gas (air, external air) flows into and out of the vacuum chamber 10 through the opening 14a for the substrate. That is, in the first chamber 11, the outflow and inflow of gas from the side wall 14 are adjusted.

The air extraction part 30 is used to extract air in the vacuum chamber 10. The suction unit 30 uses, for example, a suction pump. The suction unit 30 sucks the gas in the first chamber 11 through the suction port 16 a provided in the chamber ceiling 16 of the first chamber 11. The amount and timing of the suction by the suction unit 30 may be controlled by a control device not shown, or may be set by manual operation by an operator or the like. For example, an unillustrated control device may always drive the air suction unit 30 regardless of the position of the shutter 20, or at the time when the shutter 20 is arranged at the closing position P2 (the time when the opening 14a for the substrate is closed) The suction unit 30 is driven down. The gas evacuated from the vacuum chamber 10 by the evacuating part 30 is released into the cover 40. In addition, in the vacuum chamber 10, the gas in the lid 40 flows in. The inflow of gas into the vacuum chamber 10 will be described later.

The cover 40 is provided so as to surround the space in which the vacuum chamber 10 is arranged. The cover 40 may be provided to enclose a space including devices other than the vacuum chamber 10 (heating device 100), for example. The cover 40 may be, for example, a clean room or the like. The gas in the cover 40 is discharged to the outside by the discharge device 50. As the discharge device 50, for example, a fan or the like can be used. The gas in the vacuum chamber 10 is released into the lid 40, and is exhausted to the outside by the exhaust device 50 together with the gas in the lid 40.

5 and 6 are enlarged views showing a part of the vacuum chamber 10. 5 is a cross-sectional view of the rear part of the vacuum chamber 10, and FIG. 6 is a cross-sectional view of the front end of the vacuum chamber 10. The first chamber 11 in the vacuum chamber 10 is evacuated by the evacuating unit 30, and as shown in FIGS. 5 and 6, the external air is introduced into the vacuum chamber 10. In addition, FIGS. 5 and 6 show a state in which the shutter 20 is arranged at the closed position P2 when the air is evacuated in the vacuum chamber 10 by the air evacuating portion 30. As the gas in the first chamber 11 passes through the suction port 16a and is discharged to the outside of the vacuum chamber 10, the inside of the first chamber 11 blocked by the shutter 20 becomes negative pressure.

With the negative pressure in the first chamber 11, as shown in FIG. 5, the gas in the second chamber 12 passes through the through hole 17b of the heating unit 17 and the through hole 21d of the frame 21, and the gap K (introduction path) between the plurality of pins 19a ) And flow into the first chamber 11. As a result, the second chamber 12 becomes a negative pressure, and the outside air A passes through the opening 14b for raising and lowering, and the outside air A flows into the second chamber 12. Therefore, the outside air A flowing into the second chamber 12 from the lift opening 14b is introduced into the first chamber 11 through the gap K of the introduction path.

The outside air A introduced into the first chamber 11 flows to the side (to the outside in the radial direction) along the bottom surface of the substrate S as shown in each of FIGS. 5 and 6, and flows into the first chamber 11 It rises so as to surround the edge of the substrate S. The rising outside air A flows from the edge of the upper heating part 18 to the upper part of the upper heating part 18, and flows through the gap D between the chamber ceiling 16 and the upper heating part 18 to the suction port 16a. That is, in the gap D, the outside air A flows from the edge of the upper heating portion 18 to the outside in the radial direction. The outside air A reaching the suction port 16a is released to the outside of the vacuum chamber 10 through the suction port 16a.

In this way, in the vacuum chamber 10, as a path for the outside air A to flow, a path from the lift opening 14b to the gap K is formed, and a path that flows into the first chamber 11 through the gap K is formed along the substrate S from the gap K. The path where the lower surface flows to the edge of the substrate S, the path that surrounds the edge of the substrate S and flows into the gap D, and the path that flows through the gap D to the suction port 16a. As an introduction path through which the outside air A is introduced into the first chamber 11, a gap K is used. This gap K is the boundary between the first chamber 11 and the second chamber 12 and is arranged inside the substrate S housed in the first chamber 11 in a plan view. Therefore, in the first chamber 11, a path of external air A such as the path described above is formed.

FIG. 7(A) is a diagram showing an example of the film thickness of the adhesive when the substrate S to which the adhesive is applied is heated by the heating device 100 related to this embodiment, and FIG. 7(B) is a diagram showing an example of the film thickness of the adhesive. A diagram showing an example of the film thickness of the adhesive when the heating device of the comparative example heats the substrate S. 7(A) and (B) are diagrams showing the film thickness distribution of the adhesive on the substrate S. In the graphs of FIGS. 7(A) and (B), the horizontal axis represents the position of the substrate S in the front-rear direction, and the vertical axis represents the film thickness of the adhesive. As shown in FIG. 7(A), in this embodiment, the outside air A flowing from the second chamber 12 into the first chamber 11 will flow from the edge of the substrate S to the suction port 16a at the top of the chamber as described above. Therefore, the film thickness of the adhesive is smaller than the dispersion from the front end to the rear end of the substrate S, and the entire substrate S has a substantially uniform film thickness.

In addition, in this embodiment, the outside air A surrounded by the edge of the substrate S flows through the gap D between the top 16 of the chamber and the upper heating part 18. There is no or no outside air A flowing through the surface of the adhesive layer. Very few, so the dispersion of the film thickness of the heated adhesive is small.

On the other hand, the example shown in FIG. 7(B) is shown in the first chamber 11 containing the substrate S, and there is no structure for regulating the flow of outside air from the side wall 14. Furthermore, a structure without a partition 13 is used. The heating device is used to heat the substrate S. The heating device related to this comparative example exhausts the surroundings of the vacuum chamber 10 to exhaust the gas in the vacuum chamber 10 to the outside of the vacuum chamber 10. At this time, the external air flows into the first chamber 11 through the gap between the side wall 14 of the vacuum chamber 10 or the gap between the shutter 20 and the side wall 14, for example, the external air flows in the first chamber 11 from the front side to the back side.

As a result, in the heating device of the comparative example, when there is a flow of external air on the surface of the substrate S, for example, if the external air flows across the surface of the substrate S in one direction, there may be adhesion after the solvent volatilizes. When the film thickness of the layer is discrete. If the outside air flows from the front side of the substrate S to the rear side in one direction, as shown in FIG. 7(B), the film thickness of the rear end portion of the substrate S increases compared to other regions of the substrate S. In this embodiment, by heating the substrate S by using the aforementioned heating device 100, it is possible to suppress dispersion in the film thickness of the adhesive layer.

FIG. 8 is a diagram showing an example of the substrate processing system 200 related to this embodiment. As shown in FIG. 8, the substrate processing system 200 includes a coating device 110, a heating device 100, and a pasting device 120. The coating device 110 applies an adhesive to the substrate S before being heated by the heating device 100. The coating device 110 applies an adhesive to the substrate S by, for example, a spin coating method to form an adhesive layer. In addition, the coating device 110 may form the adhesive layer by other coating methods such as a dipping method, a roller blade method, a doctor blade method, a spray method, and a slit nozzle method. The sticking device 120 sticks a support such as glass to the substrate S heated by the heating device 100. The coating device 110 and the sticking device 120 may not be provided with at least one of them.

Fig. 9 is a diagram showing another example of the substrate processing system. The substrate processing system 200A shown in FIG. 9 has a structure in which a plurality of heating devices 100 are arranged with respect to the substrate processing system 200. In this case, when the processing of the coating device 110 and the pasting device 120 is time-consuming, the heating device 100 is time-consuming. By providing the heating device 100 in multiple numbers, the heating device 100 can be used to heat the substrate S in parallel. Therefore, the processing time of the entire substrate S in the substrate processing system 200A can be shortened.

FIG. 10 is a flowchart showing an example of a substrate processing method related to this embodiment. As shown in FIG. 10, this embodiment includes: the step of applying an adhesive to the substrate S (step S01), the step of heating the substrate (step S02), the step of forming a separation layer on the support (step S03), and the inversion The step of supporting the body (step S04), and the step of pasting the substrate S and the supporting body (step S05).

Fig. 11(A) is a diagram showing an example of the operation of step S01. FIG. 11(A) is a diagram showing the operation of applying an adhesive layer to the substrate S, and FIG. 11(B) is a diagram showing an example of the substrate S to which the adhesive is applied. As shown in FIG. 11(A), step S01 is to hold the substrate S on a stage (not shown), and eject a liquid for forming the adhesive layer 61 on the formation surface Sa of the substrate S from a nozzle or the like. By rotating the stage in this state, the liquid body spreads on the formation surface Sa of the substrate S, and as shown in FIG. 11(B), an adhesive layer 61 is formed on the formation surface Sa of the substrate S.

For the substrate S, for example, a circular or substantially circular semiconductor wafer having a thickness of 600 to 800 μm is used. The thickness of the semiconductor wafer is arbitrary. In addition, the substrate S may be substituted for the semiconductor wafer, for example, a glass plate having a thickness of 500 to 1500 μm or the like may be used. The substrate S is not limited to a circular shape or a substantially circular shape. For example, it may be a rectangular shape, an elliptical shape, a polygonal shape, or other shapes.

As the adhesive, various adhesives known in the art, such as acrylic, novolac, naphthoquinone, hydrocarbon, polyimide, elastomer, etc., can be used. The resin contained in the adhesive layer 61 may have adhesive properties, for example, hydrocarbon resins, acrylic-styrene resins, maleimide resins, elastomer resins, etc., or combinations of these resins. Wait.

The melting point of the adhesive may vary depending on the type or molecular weight of the aforementioned resin, and the plasticizer for the adhesive and other complexes. The type or molecular weight of the resin contained in the aforementioned adhesive can be appropriately selected according to the types of the substrate and the support, but the melting point of the resin used in the adhesive is preferably within the range of 50°C or higher and 300°C or lower. When the melting point of the resin used in the adhesive is in the range of 50°C or higher and 300°C or lower, the fluidity of the adhesive layer during heating can be suppressed. In addition, the melting point of the adhesive layer 61 can be appropriately adjusted by blending a plasticizer, a resin with a low degree of polymerization, or the like. The melting point can be measured, for example, using a well-known differential scanning calorimetry device (DSC).

(Hydrocarbon resin) Hydrocarbon resin is a resin that has a hydrocarbon skeleton and polymerized monomer composition. Examples of hydrocarbon resins include cycloolefin-based polymers (hereinafter referred to as "resin (A)"), and at least one resin selected from the group consisting of terpene resins, rosin-based resins, and petroleum resins (Hereinafter referred to as "resin (B)") etc., but not limited to this.

The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin-based monomer. Specifically, the ring-opening (co)polymer of the monomer component containing the cycloolefin-based monomer, the resin to which the monomer component containing the cycloolefin-based monomer is additionally (co)polymerized, etc. are mentioned.

The aforementioned cycloolefin-based monomers contained in the monomer component constituting the resin (A) include, for example, bicyclics such as norbornene and norbornadiene; tricyclics such as dicyclopentadiene and dihydroxypentadiene. , Tetracyclododecene and other tetracyclic bodies, pentacyclic bodies such as cyclopentadiene tertiary bodies, heptacyclic bodies such as tetracyclopentadiene, or the alkyl groups of these polycyclic bodies (methyl, ethyl, propyl (E.g., butyl, etc.) substitution, alkenyl (vinyl, etc.) substitution, alkynylene (ethylene, etc.) substitution, aryl (phenyl, p-tolyl, naphthyl, etc.) substitution, etc. Among them, norbornene-based monomers selected from the group consisting of norbornene, tetracyclododecene, or these alkyl substitution products are particularly preferred.

The monomer component constituting the resin (A) may contain the aforementioned cycloolefin-based monomer and other monomers that can be copolymerized. For example, it is preferable to contain an olefin monomer. Examples of olefin monomers include ethylene, propylene, 1-butene, isobutene, 1-hexene, and α-olefins. The olefin monomer can be linear or branched.

In addition, as a monomer component constituting the resin (A), a cycloolefin monomer is contained, and it is preferable from the viewpoint of high heat resistance (low thermal decomposition, thermal weight reduction). The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is preferably 5 mol% (mole percentage) or more, preferably 10 mol% or more, and more preferably 20 mol% or more. In addition, the ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is not particularly limited, but from the viewpoint of solubility and stability in solution, 80 mol% or less is preferred, and 70 mol% or less is preferred. Mole% or less is better.

In addition, as a monomer component constituting the resin (A), a linear or branched olefin monomer may be contained. The ratio of the olefin monomer to the total monomer components constituting the resin (A), from the viewpoint of solubility and flexibility, is preferably 10 to 90 mol%, preferably 20 to 85 mol%, and 30 to 80 mol%. Ear% is better.

In addition, resin (A), such as a resin formed by polymerizing monomer components composed of cycloolefin monomer and olefin monomer, does not have a polar group, and is preferable in terms of suppressing gas generation at high temperatures. .

There are no particular restrictions on the polymerization method or polymerization conditions when polymerizing the monomer components, and it may be set according to the usual method.

Examples of commercially available products that can be used as resin (A) include "TOPAS" manufactured by POLYPLASTICS CO., LTD., "APEL" manufactured by Mitsui Chemicals Co., Ltd., and manufactured by ZEON Co., Ltd. "ZEONOR" and "ZEONEX", "ARTON" manufactured by JSR Corporation, etc.

The resin (B) is at least one resin selected from the group consisting of terpene-based resin, rosin-based resin, and petroleum resin. Specifically, as terpene-based resins, for example, terpene resins, terpene phenol resins, denatured terpene resins, hydrogenated terpene resins, hydrogenated terpene phenol resins, and the like can be cited. Examples of rosin-based resins include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. As the petroleum resin, for example, aliphatic or aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone-indene petroleum resin, and the like. Among these, hydrogenated terpene resin and hydrogenated petroleum resin are more preferable.

The weight average molecular weight of the resin (B) is not particularly limited, but is preferably 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of outgassing in a high-temperature environment is small. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the peeling speed when peeling the laminate is good. In addition, the weight average molecular weight of the resin (B) in this embodiment means the molecular weight in terms of polystyrene measured by gel penetration chromatography (GPC).

In addition, as the resin, a resin in which the resin (A) and the resin (B) are mixed can be used. By mixing, heat resistance and peeling speed are good. For example, the mixing ratio of resin (A) and resin (B) is (A):(B)=80:20～55:45 (mass ratio), due to the excellent peeling speed, heat resistance in high temperature environment, and flexibility So good.

(Acrylic-styrene resin) Examples of acrylic-styrene resins include resins polymerized by using styrene or styrene derivatives, (meth)acrylates, etc., as monomers.

Examples of (meth)acrylates include alkyl (meth)acrylates composed of a chain structure, (meth)acrylates having an aliphatic ring, and acrylates having an aromatic ring. Examples of (meth)acrylic acid alkyl esters composed of a chain structure include long-chain acrylic acid-based alkyl esters having an alkyl group having 15 to 20 carbon atoms, and acrylic acid-based alkyl esters having an alkyl group having 1 to 14 carbon atoms. Wait. Examples of long-chain acrylic acid-based alkyl esters include n-pentadecyl, n-hexadecyl, n-heptadecanyl, n-octadecyl, n-nonadecyl, n-eicosyl, etc. The alkyl ester of acrylic acid or methacrylic acid. In addition, the alkyl group may be branched.

The acrylate alkyl ester having an alkyl group having 1 to 14 carbon atoms includes conventional acrylate alkyl esters used in existing acrylic adhesives. For example, the alkyl group includes methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, lauryl, tridecyl, etc. Alkyl ester of acrylic acid or methacrylic acid.

The (meth)acrylates having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, and (meth)acrylic acid Norbornyl ester, isobornyl (meth)acrylate, tricyclodecyl (meth)acrylate, tetracyclododecyl (meth)acrylate, dicyclopentyl (meth)acrylate, etc., and methacrylic acid Isobornyl and dicyclopentyl (meth)acrylate are preferred.

The (meth)acrylate having an aromatic ring is not particularly limited. Examples of the aromatic ring include phenyl, benzyl, p-tolyl, xylyl, biphenyl, naphthyl, anthryl, phenoxymethyl, Phenoxyethyl and so on. In addition, the aromatic ring may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.

(Maleimide resin) Maleimide resins, for example, as monomers, N-methylmaleimide, N-ethylmaleimide, N-n-propylmaleimide, N -Isopropyl maleimide, N-n-butyl maleimide, N-isobutyl maleimide, N-secondary butyl maleimide, N-tertiary butyl Maleimide, N-pentylmaleimide, N-hexylmaleimide, N-heptylmaleimide, N-octylmaleimide, N -Lauryl maleimide, N-octadecyl maleimide and other maleimide having alkyl groups, N-cyclopropyl maleimide, N-cyclobutyl maleimide Leximine, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, etc. have fat Hydrocarbon-based maleimide, N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenyl A resin obtained by polymerizing aromatic maleimines having an aryl group such as maleimines.

For example, it is possible to use a cycloolefin copolymer of a repeating unit represented by the following chemical formula [Chem. 1] and a copolymer of the repeating unit represented by the following chemical formula [Chemical 2] as the resin of the subsequent component.

[Chemical formula 1]

[Chemical formula 2]

(In the aforementioned chemical formula [Chemical 2], n is 0 or an integer of 1 to 3) As such a cycloolefin copolymer, APL 8008T, APL 8009T, APL 6013T (all manufactured by Mitsui Chemicals Co., Ltd.), etc. can be used.

(Elastomer) The elastomer preferably contains a styrene unit as a structural unit of the main chain, and the "styrene unit" may have a substitution group. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an acetoxy group, and a carboxyl group. In addition, the content of the styrene unit is more preferably within a range of 14% by weight (% by weight) or more and 50% by weight or less. Furthermore, the weight average molecular weight of the elastomer is preferably within the range of 10,000 or more and 200,000 or less.

If the content of the styrene unit is within the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less, it is easy to dissolve in the hydrocarbon-based solvent described later, so it can be The first adhesive layer is easily and quickly removed. In addition, since the content of styrene units and the weight average molecular weight are within the aforementioned range, the photoresist solvent (such as PGMEA, PGME, etc.) and acid (hydrofluoric acid) exposed during the photoresist photoetching step of the wafer Etc.), alkali (TMAH, etc.) exerts excellent tolerance.

In addition, the aforementioned (meth)acrylate may be further mixed with the elastomer.

In addition, the content of the styrene unit is preferably 17% by weight or more, and more preferably 40% by weight or less.

A preferable range of the weight average molecular weight is 20,000 or more, and a more preferable range is 150,000 or less.

As the elastomer, the content of the styrene unit is within the range of 14% by weight or more and 50% by weight or less, and if the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less, various elastomers can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer can be used Block copolymer (SBS), styrene-butadiene-butylene-styrene block copolymer (SBBS), and their hydrogenated products, styrene-ethylene-butylene-styrene block copolymer (SEBS) , Styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer ( SEEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer (Septon V9461 (manufactured by Kuraray Co., Ltd.)) in which the styrene block is a reaction bridge type, and the styrene block is a reaction bridge type styrene- Ethylene-butylene-styrene block copolymer (Septon V9827 (manufactured by Kuraray Co., Ltd.) having a reactive polystyrene-based hard block, etc., and the content of the styrene unit and the weight average molecular weight are within the above-mentioned ranges.

In addition, hydrides are more preferable among elastomers. In the case of hydride, heat stability is improved, and it is unlikely to cause deterioration such as decomposition or polymerization. In addition, it is better from the viewpoint of solubility to hydrocarbon solvents and resistance to photoresist solvents.

In addition, a block polymer with styrene at both ends of the elastomer is more preferable. The high heat stability of the styrene block at both ends shows higher heat resistance.

More specifically, the elastomer is more preferably a hydrogenated product of a block copolymer of styrene and a conjugated diene. The heat stability is improved, and it is not easy to cause deterioration such as decomposition or polymerization. In addition, the high heat stability of the styrene block at both ends shows higher heat resistance. Furthermore, it is more preferable from the viewpoint of solubility to hydrocarbon solvents and resistance to photoresist solvents.

It can be used as a commercially available product of the elastomer contained in the adhesive that constitutes the adhesive layer 61, for example, "SEPTON (trade name)" manufactured by Kuraray Co., Ltd., and "HYBRAR (trade name) manufactured by Kuraray Co., Ltd. )", "Tuftec (trade name)" manufactured by Asahi Kasei Co., Ltd., "DYNARON (trade name)" manufactured by JSR Co., Ltd., etc.

The content of the elastomer contained in the adhesive constituting the adhesive layer 61 is, for example, the total amount of the adhesive composition is 100 parts by weight, preferably in the range of 50 parts by weight or more and 99 parts by weight, and 60 parts by weight or more and 99 parts by weight. The range of weight part or less is more preferable, and the range of 70 weight part or more and 95 weight part or less is more preferable. Within these ranges, the wafer and the support can be properly bonded to the support while maintaining heat resistance.

In addition, multiple types of elastomers may be mixed. In other words, the adhesive system constituting the adhesive layer 61 may include a plurality of types of elastomers. At least one of the plural types of elastomers may contain a styrene unit as a structural unit of the main chain. In addition, if at least one of the plural types of elastomers has a styrene unit content in the range of 14% by weight or more and 50% by weight or less, or the weight average molecular weight is in the range of 10,000 or more and 200,000 or less, the present invention The category. In addition, when the adhesive constituting the adhesive layer 61 contains a plurality of types of elastomers, as a result of mixing, the content of the styrene unit can also be adjusted so that the content of the styrene unit falls within the aforementioned range. For example, Septon 4033 of Septon (trade name) manufactured by Kuraray Co., Ltd. with a styrene unit content of 30% by weight and Septon 2063 of Septon (trade name) with a styrene unit content of 13% by weight in a weight ratio of 1 When 1 is mixed, the content of styrene to the entire elastomer contained in the adhesive is 21 to 22% by weight, which is 14% by weight or more. In addition, for example, the styrene unit becomes 35% by weight when mixing 10% by weight and 60% by weight in a weight ratio of 1 to 1, which is within the aforementioned range. The present invention may be of this type. In addition, the plurality of types of elastomers contained in the adhesive agent constituting the adhesive layer 61 all contain styrene units within the aforementioned range, and the weight average molecular weight is preferably within the aforementioned range.

In addition, it is preferable to form the adhesive layer 61 using a resin other than a photocurable resin (for example, a UV curable resin). A resin other than a photocurable resin is used, so after peeling or removal of the adhesive layer 61, it is possible to prevent residue from remaining on the periphery of the minute irregularities of the supported substrate. In particular, as the adhesive constituting the adhesive layer 61, it is not dissolved in any solvent, and it is preferably dissolved in a specific solvent. This is because it is not because a physical force is applied to the substrate S, but it can be removed by dissolving the adhesive layer 61 in a solvent. When the adhesive layer 61 is removed, even the substrate S whose strength has been reduced does not damage or deform the substrate S, and the adhesive layer 61 can be easily removed.

(Diluent solvent) As the dilution solvent used when forming the adhesive layer 61, for example, decalin (boiling point 185°C to 195°C) and butyl acetate (boiling point 126°C) can be used. Other diluent solvents, such as hexane, heptane, octane, nonane, methyl octane, decane, undecane, dodecane, tridecane and other linear hydrocarbons, carbon number 4 to 15 branched hydrocarbons, such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decalin, tetralin and other cyclic hydrocarbons, p-menthane, o-menthane, m-menthane, diphenyl Methane, 1,4-terpene diol, 1,8-terpene diol, campane, norbornane, pinane, thumberane, carane (carane), phyllene, geraniol, nerol, Linalool, citral, citronellol, menthol, isomenthol, neomenthol, α-terpineol, β-terpineol, γ-terpineol, terpinen-1-ol, terpinein En-4-ol, terpine dihydroacetate, 1,4-cineol, 1,8-cineol, borneol, carvone, ionone, thujone (thujone), camphor (camphor), d-limonene (limonene), l-limonene, dipentene (dipentene) and other terpene solvents; γ-lactone and other lactones; acetone, methyl ethyl ketone, cyclohexanone ( CH), methyl n-pentanone, methyl isoamyl ketone, 2-heptanone and other ketones; ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol and other polyvalent alcohols; ethylene glycol monoacetate, Compounds having ester binding such as diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, monomethyl ethers and monoethyl groups of the aforementioned polyvalent alcohols or compounds having the aforementioned ester binding Ether, monopropyl ether, monobutyl ether and other monoalkyl ethers or monophenyl ether and other polyvalent alcohol derivatives with ether-bound compounds (among them, propylene glycol methyl ether acetate ((PGMEA), propylene glycol methyl ether) (PGME is preferred); cyclic ethers such as dioxane, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl acetate Oxybutyl ester, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate and other esters; anisole, ethyl benzyl ether, cresol methyl Aromatic organic solvents such as ether, diphenyl ether, dibenzyl ether, phenetole, butyl phenyl ether, etc.

(Other ingredients) The adhesive that constitutes the adhesive layer 61 may further contain other substances that are miscible in a range that does not impair the essential characteristics. For example, additional resins, plasticizers, adhesive adjuvants, stabilizers, colorants, thermal polymerization inhibitors, surfactants, and other customary additives for improving the performance of the adhesive can be further used.

Fig. 12 is a flowchart showing the operation of step S02. As shown in FIG. 12, in step S02, first, the substrate S on which the adhesive layer 61 has been formed is carried into the first chamber 11 of the heating device 100 (step S21). In this case, the shutter 20 of the heating device 100 is first arranged in the open position P1, and the substrate S is carried into the first chamber 11 from the substrate opening 14a by a substrate transport mechanism (not shown). The substrate conveying mechanism makes the substrate S stand by at a position higher than the upper end of the fixing pin 17c.

In this state, the plurality of pins 19a are protruded from the upper surface 17a of the heating portion 17 by the driving of the pin driving portion 19c, and the upper end of the plurality of pins 19a is moved to be higher than the upper end of the fixing pin 17c to support the substrate S. After the substrate S is supported by the plurality of pins 19a, the substrate transport mechanism releases the holding of the substrate S. With this operation, the substrate S is delivered to the plurality of pins 19a by the substrate transport mechanism. After that, the substrate transport mechanism is retracted to the outside of the vacuum chamber 10 through the substrate opening 14a. In addition, the pin driving portion 19c lowers the plurality of pins 19a, and places the substrate S on the upper end of the fixed pin 17c.

Next, the substrate S carried into the first chamber 11 is heated by the heating unit 17 (step S22). Fig. 11(B) is a diagram showing an example of the operation of step S02. In step S22, the substrate S may be heated several times at different temperatures, for example. For example, when the substrate S is heated multiple times, the later heating, the higher the temperature at which the substrate S is heated. More specifically, when the substrate S is heated multiple times, the initial heating is set at a temperature of one-third to one-half of the lowest boiling point of the solvent (solvent) contained in the adhesive. Next, it is set at the same temperature as the boiling point and/or a temperature higher than the boiling point. As shown in FIG. 11(B), by heating the adhesive layer 61 in this manner, the solvent contained in the adhesive layer 61 is vaporized, and the adhesive layer 61 is dried. In addition, in this step S22, "the temperature of one-third to one-half of the boiling point" means that the lowest boiling point in the solvent is marked as X[℃] in Celsius, which means "X/3[℃] to The temperature zone of X/2[°C], for example, when the solvent with a boiling point of 150°C is the solvent with the lowest boiling point, it refers to the temperature zone of “50°C to 75°C”. In addition, "the temperature equivalent to the boiling point" typically refers to a temperature range of X ± 15 [°C]. In addition, the temperature used for X is, for example, 80°C to 240°C, preferably 100°C to 220°C, and more preferably 110°C to 200°C.

When the adhesive layer 61 is heated, in the heating device 100, the gas in the first chamber 11 is exhausted from the exhaust port 16a provided in the first chamber 11 by operating the exhaust unit 30 (step S23). With this operation, the outside air A of the vacuum chamber 10 flows into the second chamber 12 through the lift opening 14b. The external air A is introduced into the first chamber 11 through the gap K (introduction path). The outside air A introduced into the first chamber 11 flows through the aforementioned path to the exhaust port 16a, and is exhausted to the outside of the vacuum chamber 10 through the exhaust port 16a.

The external air A discharged to the outside of the vacuum chamber 10 is discharged to the outside of the cover 40 by the discharge device 50 of the cover 40. The solvent vaporized by the adhesive layer 61 by the heating of the substrate S flows along the lower surface of the upper heating portion 18 toward the edge of the substrate S, mixed with the air flow of the outside air A, and is transferred from the exhaust port 16a to the outside of the vacuum chamber 10 discharge. Moreover, when heating the substrate S, in addition to the heating section 17, the upper heating section 18 may also be used to heat the substrate S.

After the heating process is completed, the substrate S is carried out of the vacuum chamber 10. In this case, in the first chamber 11, the plurality of pins 19a are raised by the pin driving portion 19c, and the substrate S is received from the fixed pin 17c at the upper end of the pin 19a, and the substrate S is arranged at a position where it is delivered to the substrate transport mechanism. Thereafter, the shutter 20 is moved to the open position P1 by, for example, the shutter driving unit 23, the substrate transfer mechanism waiting outside the vacuum chamber 10 enters the first chamber 11, and the substrate placed on the pin 19a is moved to the open position P1. The substrate S is delivered to the substrate transport mechanism. After that, the pin driving portion 19c accommodates the plurality of pins 19a in the through holes 17b of the heating portion 17. In addition, the substrate transport mechanism that receives the substrate S moves from the substrate opening 14a to the outside of the first chamber 11 while holding the substrate S. With this operation, the substrate S after the heat treatment is carried out from the vacuum chamber 10 and a new substrate S can be carried in the first chamber 11.

Next, in the flowchart shown in FIG. 10, the procedure on the support G side will be described. FIG. 13(A) is a diagram showing an example of the operation of step S03. In step S03, a separation layer is formed on the support G by a film forming method such as CVD. In addition, this step S03 is shown in FIG. 13(A). For example, the support G is held on a stage (not shown) and ejected from a nozzle or the like to form the separation layer 62 on the formation surface Ga of the support G Liquid body. In addition, in this step S03, the aforementioned nozzle may also be a slit nozzle or the like. In this case, it is possible to adopt an aspect in which the stage and the slit nozzle are relatively moved, and the separation layer 62 is formed on the formation surface Ga of the support G. In addition, as the support G, for example, a circular or substantially circular semiconductor wafer having a thickness of 600 to 800 μm is used. The thickness of the semiconductor wafer is arbitrary. In addition, the support G may replace the semiconductor wafer, for example, a glass plate having a thickness of 500 to 1500 μm or the like may be used. The shape of the support G is set according to the shape of the substrate S.

Hereinafter, the separation layer will be described in detail by taking FIG. 13(A) as an example. The separation layer 62 is formed of a material that is altered by, for example, absorbing light. The deterioration of the separation layer 62 means a state in which the separation layer 62 can be destroyed by a slight external force, or a state in which the adhesion between the separation layer 62 and the adjacent layer is reduced. The separation layer 62 undergoes deterioration by absorbing light, and its strength or adhesion to the support is lowered compared to before the deterioration. Therefore, the degraded separation layer 62 may be destroyed by applying a slight external force or the like, or may peel off from the support G.

The deterioration of the separation layer 62 may be decomposition, bridging, changes in the three-dimensional arrangement, or dissociation of the functional machine caused by the energy (exothermic or non-exothermic) of the absorbed light (then, accompanied by the hardening of the separation layer 62, Degassing, shrinking or expansion) etc. The deterioration of the separation layer 62 is caused by the absorption of light by the material constituting the separation layer 62. Therefore, the type of deterioration of the separation layer 62 may vary according to the type of material constituting the separation layer 62. In addition, the separation layer 62 is not limited to a material that changes in quality by absorbing light. For example, it may be a material that is deteriorated by absorbing applied heat without relying on light, or a material that is deteriorated by other solvents or the like.

The thickness of the separation layer 62 is, for example, preferably 0.05-50 μm, more preferably 0.3-1 μm. If the thickness of the separation layer 62 is in the range of 0.05 to 50 μm, the separation layer 62 can be produced by short-time light irradiation and low-energy light irradiation, or short-time heating, short-time immersion in a solvent, etc. Spoiled. In addition, the thickness of the separation layer 62 is particularly preferably within a range of 1 μm or less from the viewpoint of productivity.

Hereinafter, the separation layer 62 that is deteriorated by the energy of the absorbed light will be described. The separation layer 62 is preferably formed of only a material having a structure that absorbs light, and within a range that does not impair the essential characteristics, a material that does not have a structure that absorbs light may be added to form the separation layer 62. In addition, it is preferable that the surface of the separation layer 62 facing the adhesive layer 61 is flat (no unevenness is formed), so that the formation of the separation layer 62 is easy to proceed, and it can be evenly pasted during pasting.

The separation layer 62 may be changed in quality by absorbing light irradiated by a laser. That is, the light irradiated to the separation layer 62 in order to change the quality of the separation layer 62 may be light irradiated by a laser. Examples of lasers that emit light to the separation layer 62 include solid lasers such as YAG lasers, ruby lasers, glass lasers, YVO4 lasers, LD lasers, fiber lasers, and dye lasers. Liquid lasers, CO2 lasers, excimer lasers, Ar lasers, He-Ne lasers and other gas lasers, semiconductor lasers, free electron lasers and other laser lights, or non-laser lights, etc. The laser that emits the light irradiated to the separation layer 62 can be appropriately selected according to the material constituting the separation layer 62, and it is only necessary to select the laser that irradiates the light of the wavelength that can change the material constituting the separation layer 62.

FIG. 13(B) is a diagram showing an example of the operation of step S04. FIG. 13(B) shows an example of the operation of reversing the support G. As shown in FIG. 13(B), in step S04, the support body G is hold|maintained by the holding part of the inversion apparatus which is not shown, for example. After that, by inverting the holding portion around a specific axis, the support G is inverted so that the formation surface Ga on which the separation layer 62 is formed becomes the lower side. In addition, the reversing device only needs to be capable of reversing the support G, and its configuration is arbitrary.

Furthermore, in the flowchart shown in FIG. 10, steps S01 and S02 of the steps on the side of the substrate S, and steps S03 and S04 of the steps on the side of the support G may be performed in parallel or in whole or in part, or may be steps S01 and S02. , S03, S04 are arranged in chronological order.

FIG. 14 is a diagram showing an example of the operation of step S05. FIG. 14 shows an example of the action of pasting the substrate S and the support G. As shown in FIG. 14, step S05 is to paste the substrate S and the support G by a pasting device not shown. The pasting device can be included in the reversing device used in step S04, or a device different from the reversing device. The sticking device sticks the substrate S and the support G by sticking the adhesive layer 61 of the substrate S and the separation layer 62 of the support G to each other. In this case, the substrate S with the adhesive layer 61 upward and the separation layer 62 with the separation layer 62 turned downward in step S04 are opposed and aligned, and the substrate S and the support G are brought close to each other. The fit of the two. In addition, as for the pasting device, the substrate S and the support G can be pasted, and the configuration is arbitrary.

FIG. 15 is a diagram showing another example of the substrate processing system related to this embodiment. FIG. 15 shows an example of each unit arranged in the substrate processing system 200B. In addition, FIG. 15 uses XYZ coordinates to illustrate the directions in the drawing. In this XYZ coordinate, the vertical direction is the Z direction, and the horizontal direction is the X direction and the Y direction. In addition, for each of the X, Y, and Z directions, the direction indicated by the arrow is called the + direction (for example, the +X direction), and the opposite direction is called the-direction (for example, the -X direction).

The substrate processing system 200B shown in FIG. 15 processes a substrate S. The substrate processing system 200B includes: a substrate carry-in and carry-out section CS for carrying in and out of the substrate S, a transport section TR for transporting the substrate S, a cooling section CA for cooling the substrate S, and a coating section for applying an adhesive to the substrate S SC, the cleaning section CC for cleaning the substrate S, the heating section BP for heating the substrate S, the vacuum heating section VB for heating the substrate S under reduced pressure, the pre-aligner PA for aligning the substrate S, and temporarily holding the substrate S The loading and unloading chamber LL, the bonding part BO for bonding the substrate S and the support G, and the power supply part EB for supplying power to the entire system. In the substrate processing system 200B, the heating part BP includes the aforementioned heating device 100. In addition, the coating part SC includes the aforementioned coating device 110. In addition, the pasting part BO includes the aforementioned pasting device 120.

The substrate carry-in and carry-out section CS is provided at the end of the substrate processing system 200B on the -Y side, and is arranged in a plurality of places, for example, four places in the X direction. In addition, the number of substrate carry-in and carry-out parts CS is not limited to 4, and 3 or less or 5 or more can be installed. By using a plurality of places (4 places) of the substrate carry-in and carry-out section CS alternately, it is possible to improve the efficiency of carrying the substrate S into or out of the substrate processing system 200B.

The transport unit TR has a first transport unit TR1 and a second transport unit TR2. The first transport portion TR1 transports the substrate S, the support G, or a laminate of both, etc. in a wide range in the X direction. The first transport unit TR1 has, for example, a transport robot arm not shown. The transport robot can move through the first transport section TR1 in the X direction. The loading and unloading chamber LL (first loading and unloading chamber LL1) is arranged on the -X side of the first conveyance portion TR1, and the power supply unit EB is arranged on the +X side. On the +Y side of the first transfer part TR1, the pre-aligner PA, the cooling part CA, the heating part BP (the seventh heating part BP7 and the eighth heating part BP8), and the loading and unloading chamber LL (the second loading Load out room LL2). In addition, in the cooling part CA, the unit on which the cooling plate is arranged and the unit on which the cooling area is arranged are overlapped in the Z direction. The first transport unit TR1 transports the substrate S and the like between these substrate transport unit CS, load-out chamber LL, pre-aligner PA, cooling unit CA, and heating unit BP.

The second conveyance part TR2 is arranged on the +Y side of the cooling part CA, and conveys the substrate S, the support G, etc. in a wide range in the Y direction. The second transfer part TR2 has a transfer robot arm not shown. The transport robot arm can move in the second transport part TR2 along the Y direction. On the -X side of the second conveyance part TR2, a maintenance part MN, a coating part SC, and a cleaning part CC are arranged. On the +X side of the second conveyance part TR2, a maintenance part MN, a heating part BP (the first heating part BP1 to the fourth heating part BP4, the fifth heating part BP5 to the sixth heating part BP6), and the vacuum heating part VB are arranged. Moreover, the 1st heating part BP1-the 4th heating part BP4 are overlapped and arrange|positioned in the Z direction. In addition, the fifth heating part BP5 to the sixth heating part BP6 and the vacuum heating part VB are arranged to overlap in the Z direction. The second conveying part TR2 conveys the substrate S and the like between the coating part SC, the cleaning part CC, the heating part BP (the first heating part BP1 to the sixth heating part BP6), and the vacuum heating part VB.

The substrate S and the support G that are carried in by the substrate carry-in and carry-out section CS are transported to each transport destination by the first transport section TR1 or the second transport section TR2 in accordance with the substrate processing method related to this embodiment. After being processed, a laminate in which the substrate S and the support G are adhered is formed, and is carried into the substrate carry-in and carry-out part CS by the first transport part TR1. In this way, in the substrate processing system 200B, each device is configured in such a way that the enlargement of the system can be suppressed, and at the same time, the substrate processing method related to the present embodiment can be efficiently implemented.

As described above, according to the heating device 100, the substrate processing method, and the substrate processing system 200, 200A, and 200B related to this embodiment, when the adhesive applied on the substrate S is heated, the flow of gas can be suppressed in one direction. Since it cuts across the substrate S, it is possible to suppress variations in the film thickness of the adhesive layer formed on the substrate S. As a result, the substrate S and the support G can be attached with high precision.

In addition, the present invention is not limited to the above description, and various changes can be made within a range that does not deviate from the gist of the present invention.

A: Outside air G: Support K: gap P1: Open position P2: Blocked position S: substrate 17: Heating section 200, 200A, 200B: substrate processing system 10: Vacuum chamber 11: Room 1 12: Room 2 13: Partition 14: side wall 14a: Opening for substrate 14b: Opening for lifting 16: top of room 16a: Exhaust port 17b, 21d: Through hole 17c: fixed pin 18: Upper heating part 19: Substrate lifter 19a: pin 19c: Pin drive 20: Block the door 23: Gate drive 23a: Lifting drive 23b: Horizontal drive section 30: Exhaust part 31: Upper heating part 40: cover 50: Discharge device 100: heating device 110: Coating device 120: Pasting device

[Figure 1] is a cross-sectional view showing an example of a heating device related to this embodiment. [Figure 2] is a plan view showing an example of the interior of the first room. [Fig. 3] A diagram showing a state in which the opening is opened. [Fig. 4] A diagram showing a state in which the opening is closed. [Figure 5] An enlarged view of a part (rear side) of the vacuum chamber. [Figure 6] An enlarged view of a part (front side) of the vacuum chamber. [Fig. 7] (A) is a diagram showing an example of the film thickness of the adhesive when the substrate to which the adhesive is applied is heated by the heating device related to this embodiment, and (B) is a diagram showing the use related to the comparative example A diagram showing an example of the film thickness of the adhesive when the heating device heats the substrate. [FIG. 8] A diagram showing an example of a substrate processing system related to this embodiment. [FIG. 9] A diagram showing another example of the substrate processing system related to this embodiment. [Fig. 10] is a flowchart showing an example of a substrate processing method related to this embodiment. [FIG. 11] (A) is a diagram showing the operation of applying an adhesive layer on a substrate, and (B) is a diagram showing an example of a substrate to which an adhesive is applied. [Fig. 12] is a flowchart showing an example of the operation of heating the substrate in the substrate processing method related to this embodiment. [FIG. 13] (A) is a diagram showing an example of a state where a separation layer is formed on a support, and (B) is a diagram showing an example of an operation of inverting the support. [Fig. 14] A diagram showing an example of the action of pasting the substrate and the support. [FIG. 15] A diagram showing another example of the substrate processing system related to this embodiment.

D: gap

K: gap

S: substrate

17: Heating section

10: Vacuum chamber

11: Room 1

12: Room 2

13: Partition

13a: flexion

14: side wall

14a: Opening for substrate

14b: Opening for lifting

15: bottom

16: top of room

16a: Exhaust port

17a: Above

17b, 21d: Through hole

17c: fixed pin

18: Upper heating part

19: Substrate lifter

19a: pin

19b: Pin support

19c: Pin drive

20: Block the door

21: Frame

21a: bottom of the frame

21b: frame side

21c: Flange

22: soil platform

23: Gate drive

30: Exhaust part

40: cover

50: Discharge device

100: heating device

Claims (20)

A heating device is provided with a vacuum chamber for storing and heating a substrate to be coated with an adhesive, and evacuates the air extraction part in the aforementioned vacuum chamber; and is characterized by: The aforementioned vacuum chamber has: To accommodate the substrate, a first chamber with a side wall capable of regulating the flow of gas between the side of the substrate and the outside, A second chamber that is arranged below the first chamber and allows gas to circulate with the outside, and has a heating part that heats the substrate, and In plan view, at least in the outer area of the substrate housed in the first chamber, the partition between the first chamber and the second chamber is separated by adjusting the gas flow between the first chamber and the second chamber ； The suction unit sucks the gas in the first chamber through a suction port provided in the first chamber. Such as the heating device of claim 1, where The heating part is arranged so as to partition the first chamber and the second chamber together with the partition part. Such as the heating device of claim 1 or 2, where The first chamber has a heating portion for heating the upper portion of the substrate, and the upper heating portion is arranged between the suction port and the substrate. Such as the heating device of any one of claim 1 to 3, where The first chamber includes: an opening provided in the side wall for carrying in and out of the substrate, and a shutter for opening and closing the opening; the exhaust port is provided at the top of the first chamber, and external air is introduced into the first chamber. The introduction path in the first chamber is arranged at the boundary between the first chamber and the second chamber, and is arranged inside the substrate housed in the first chamber in a plan plan view. Such as the heating device of claim 4, where The suction port is arranged in the center or almost the center of the substrate housed in the first chamber in a plan plan view. Such as the heating device of any one of claim 1 to 5, where It is provided with a plurality of pins capable of raising and lowering the substrate, and a pin driving unit for raising and lowering the plurality of pins. Such as the heating device of claim 6, where The periphery of the pin forms at least a part of the introduction path. Such as the heating device of any one of claim 1 to 7, where It is provided with a cover that surrounds the space where the vacuum chamber is installed, and a discharge device that discharges the gas in the cover. A substrate processing system, which is characterized by Including any heating device of claim 1-8. Such as the substrate processing system of claim 9, wherein It includes a plurality of heating devices having different temperatures for heating the substrate. Such as the substrate processing system of claim 9 or 10, where An attaching device for attaching the support to the substrate after being heated by the heating device is included. Such as the substrate processing system of any one of claims 9 to 11, wherein A coating device for applying an adhesive to the substrate before being heated by the heating device is included. A method for processing a substrate, which uses a vacuum chamber for heating a substrate to which an adhesive is applied to process the aforementioned substrate; it is characterized by: The aforementioned vacuum chamber has: To accommodate the substrate, a first chamber with a side wall capable of regulating the flow of gas between the side of the substrate and the outside, A second chamber that is arranged below the first chamber and allows gas to circulate with the outside, and has a heating part that heats the substrate, and In plan view, at least in the outer area of the substrate housed in the first chamber, the partition between the first chamber and the second chamber is separated by adjusting the gas flow between the first chamber and the second chamber ； Including: accommodating the aforementioned substrate in the aforementioned first chamber, and Heating the substrate contained in the first chamber by the heating unit, and The gas in the first chamber is evacuated from an exhaust port provided in the first chamber. Such as the substrate processing method of claim 13, wherein The gas in the first chamber is pumped from the exhaust port provided on the top of the chamber of the first chamber, and the gas in the first chamber is evacuated by the boundary between the first chamber and the second chamber and is arranged in the plan view. The introduction path inside the substrate of the first chamber introduces external air into the first chamber. Such as the substrate processing method of claim 14, wherein The suction port included in the center or almost the center of the substrate accommodated in the first chamber in a plan plan view sucks the gas in the first chamber. Such as the substrate processing method of any one of claim 13 to 15, wherein It includes exhausting the gas in the cover surrounding the space where the vacuum chamber is provided by the exhaust device. Such as the substrate processing method of any one of claim 13 to 16, wherein It includes heating the aforementioned substrate multiple times at different temperatures. Such as the substrate processing method of claim 17, wherein It is included in the case where the substrate is heated multiple times, the later the heating, the higher the temperature at which the substrate is heated. Such as the substrate processing method of claim 17 or 18, wherein In the case where the substrate is heated multiple times, the initial heating is set at a temperature of one-third to one-half of the lowest boiling point of the solvent contained in the adhesive. Such as the substrate processing method of any one of claim 13 to 19, wherein It includes the aforementioned substrate attachment support after being heated again.

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