TW202114011A - Heater, substrate processing system, and substrate processing method - Google Patents
Heater, substrate processing system, and substrate processing method Download PDFInfo
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Description
本發明係關於加熱裝置、基板處理系統、及基板處理方法。The present invention relates to a heating device, a substrate processing system, and a substrate processing method.
半導體裝置等電子裝置,追求小型化及薄型化。製造這樣的電子裝置的場合,已知為例如黏貼具有複數電子零件的基板,與玻璃等支撐體而形成層積體,以此層積體的狀態進行往其後之基板的處理(例如參照專利文獻1)。 [先前技術文獻] [專利文獻]Electronic devices such as semiconductor devices are pursuing miniaturization and thinning. When manufacturing such an electronic device, it is known that, for example, a substrate having a plurality of electronic components is bonded together with a support such as glass to form a laminate, and then the substrate is processed in the state of the laminate (for example, refer to the patent Literature 1). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2014-170847號公報[Patent Document 1] JP 2014-170847 A
[發明所欲解決之課題][The problem to be solved by the invention]
記載於專利文獻1的層積體,基板與支撐體透過接著層黏貼著。此層積體,藉著首先於基板塗布接著劑,接著加熱基板使接著劑中的溶媒揮發後黏貼基板與支撐體而形成。被塗布接著劑的基板之加熱,例如將接著劑塗布後的基板收容於真空室內,將真空室內排氣同時藉由真空室內的加熱器等來進行。此時,在真空室內,因排氣而產生氣體的流動,此氣體流動於一方向上橫切過基板表面上的話,溶媒揮發後的接著層的厚度會有產生參差不齊的場合。接著層厚度的參差不齊,成為基板與支撐體之黏貼精度降低的重要原因,變成無法高精度地進行之後的層積體(基板)的處理。In the laminate described in Patent Document 1, the substrate and the support are adhered through the adhesive layer. This laminate is formed by first applying an adhesive to the substrate, then heating the substrate to volatilize the solvent in the adhesive, and then adhering the substrate and the support. The heating of the substrate to which the adhesive is applied is performed by, for example, storing the substrate after applying the adhesive in a vacuum chamber, and evacuating the vacuum chamber while using a heater in the vacuum chamber or the like. At this time, in the vacuum chamber, gas flows due to exhaust gas. If the gas flows across the substrate surface in one direction, the thickness of the adhesive layer after the solvent volatilizes may be uneven. The unevenness of the thickness of the subsequent layer becomes an important cause of the decrease in the adhesion accuracy between the substrate and the support, and it becomes impossible to perform the subsequent processing of the laminated body (substrate) with high accuracy.
本發明,目的在於提供可以在加熱被塗布於基板的接著劑時,抑制接著劑的厚度產生參差不齊,高精度地黏貼基板與支撐體的加熱裝置、基板處理系統、及基板處理方法。 [供解決課題之手段]An object of the present invention is to provide a heating device, a substrate processing system, and a substrate processing method that can prevent unevenness in the thickness of the adhesive when heating an adhesive applied to a substrate, and adhere a substrate and a support with high precision. [Means for problem solving]
相關於本發明之第1態樣之加熱裝置,係具備供收容而加熱被塗布接著劑的基板之真空室,抽氣前述真空室內的抽氣部;前述真空室,具有:收容前述基板,於前述基板的側方在與外部之間具有可以調節氣體流通的側壁之第1室,被配置於前述第1室下方且在與外部之間容許氣體流通,具有加熱前述基板的加熱部之第2室,以及平面俯視至少在被收容於前述第1室的前述基板的外側區域以調節前述第1室與前述第2室之間的氣體流通的方式隔開前述第1室與前述第2室的隔開部;前述抽氣部,由設於前述第1室的抽氣口抽氣前述第1室內的氣體。The heating device related to the first aspect of the present invention is provided with a vacuum chamber for accommodating and heating the substrate to which the adhesive is applied, and evacuates the exhaust part in the vacuum chamber; the vacuum chamber has: accommodating the substrate, and The side of the substrate has a first chamber with a side wall that can adjust the flow of gas between the substrate and the outside. The second chamber is arranged below the first chamber and allows gas to flow between the substrate and the outside. The second chamber has a heating unit that heats the substrate. Chamber, and a plan view that separates the first chamber and the second chamber at least in an area outside the substrate housed in the first chamber in a manner that regulates the flow of gas between the first chamber and the second chamber Partitioning part; the air extraction part, the air in the first chamber is extracted from the air extraction port provided in the first chamber.
相關於本發明的第2態樣之基板處理系統,包含相關於本發明的第1態樣之加熱裝置。The substrate processing system related to the second aspect of the present invention includes the heating device related to the first aspect of the present invention.
相關於本發明的第3態樣之基板處理方法,係使用收容被塗布接著劑的基板進行加熱之用的真空室處理前述基板;前述真空室,具有:收容前述基板,於前述基板的側方在與外部之間具有可以調節氣體流通的側壁之第1室,被配置於前述第1室下方且在與外部之間容許氣體流通,具有加熱前述基板的加熱部之第2室,以及平面俯視至少在被收容於前述第1室的前述基板的外側區域以調節前述第1室與前述第2室之間的氣體流通的方式隔開前述第1室與前述第2室的隔開部;包含:將前述基板收容於前述第1室,及使收容於前述第1室的前述基板藉由前述加熱部加熱,以及由設於前述第1室的抽氣口抽氣前述第1室內的氣體。 [發明之效果]In the substrate processing method related to the third aspect of the present invention, the substrate is processed by using a vacuum chamber for heating the substrate to which the adhesive is applied; the vacuum chamber includes: accommodating the substrate on the side of the substrate The first chamber has a side wall that can regulate the flow of gas between it and the outside, is arranged below the first chamber and allows gas to flow between it and the outside, and the second chamber has a heating part for heating the substrate, and a plan view At least a partition between the first chamber and the second chamber in a region outside the substrate housed in the first chamber to regulate the flow of gas between the first chamber and the second chamber; including : The substrate is accommodated in the first chamber, the substrate accommodated in the first chamber is heated by the heating unit, and the gas in the first chamber is evacuated from an exhaust port provided in the first chamber. [Effects of Invention]
根據本發明,可以在加熱被塗布於基板的接著劑時,抑制接著劑的厚度產生參差不齊,高精度地黏貼基板與支撐體。According to the present invention, when the adhesive applied to the substrate is heated, the thickness of the adhesive can be prevented from being uneven, and the substrate and the support can be adhered with high precision.
以下,參照圖式同時說明實施型態。但,本發明並不受到以下所說明的實施型態之限制。此外,於圖式為了說明實施型態,而擴大了一部分或者為了強調記載等而變更適當的比例尺而表現。以下,把垂直於水平面的方向作為上下方向。平行於水平面的方向之中,對真空室10搬出搬入基板S的方向為前後方向,進行基板S的搬出搬入之側為前側,前側之相反側為後側。Hereinafter, the implementation mode will be described with reference to the drawings. However, the present invention is not limited by the embodiments described below. In addition, in order to explain the implementation mode, the drawings are enlarged partly or changed to an appropriate scale for emphasizing the description. Hereinafter, the direction perpendicular to the horizontal plane is regarded as the up and down direction. Among the directions parallel to the horizontal plane, the direction in which the substrate S is carried in and out of the
圖1係相關於本實施型態之加熱裝置100之一例之剖面圖。如圖1所示,加熱裝置100,係具備真空室10、抽氣部30、蓋40、與排出裝置50。真空室10,係被載置於例如平行於水平面的地板上等,收容而加熱被塗布接著劑的基板S。於本實施型態,基板S,係形成複數電子零件。電子零件,例如,包含用半導體等而被形成的晶片等。又,基板S,可以是複數電子零件由塑膜保持之構成。FIG. 1 is a cross-sectional view of an example of a
真空室10,係具有:第1室11、第2室12、隔開部13、側壁14、底部15、室頂部16、加熱部17、上部加熱部18、基板升降部19、與擋門20。第1室11,係以側壁14、室頂部16、加熱部17的上面17a、與隔開部13所區畫出的空間。第1室11係收容基板S。第2室12,係以側壁14、底部15、加熱部17、與隔開部13所區畫出的空間。於第2室12配置加熱部17的本體部分。The
隔開部13,係以隔開第1室11與第2室12的方式設置。隔開部13,係以塞住側壁14與加熱部17之間的方式配置。藉由此構成,隔開部13,於平面俯視至少在被收容於第1室11的基板S的外側區域調節第1室11與第2室12之間的氣體流通。於隔開部13的外周側,設置朝下方屈曲的屈曲部13a。屈曲部13a,係藉由未圖示的固定構件而被固定於側壁14。隔開部13,可以是在使屈曲部13a與側壁14之間挾入未圖示的密封構件之狀態下設置。隔開部13的內周側,係藉由未圖示的固定構件而被固定於後述的框架21的凸緣部21c。The
側壁14,平面俯視為矩形框狀。側壁14,係具有基板用開口部(開口部)14a、與升降用開口部14b。基板用開口部14a,以連通第1室11內外的方式設置,被設成基板S可以通過的剖面形狀。基板S,係透過基板用開口部14a而對真空室10內(第1室11內)被搬入或搬出。升降用開口部14b,係連通第2室12內外而設置,成為基板升降部19的一部分貫通的狀態。升降用開口部14b,係設在與被設置基板用開口部14a的側壁14相反側的側壁14。升降用開口部14b的上下方向,係以對應於基板升降部19的一部分升降的距離之方式設定。The
底部15,係例如平面俯視為矩形狀,被載置於具有平行於地板等水平面的面之基台等。底部15,係被設置接續於側壁14的下端,密封第2室12的下側。於側壁14與底部15之間,可以挾入未圖示的密封構件等,抑或於側壁14與底部15的接續部分充填或黏貼密封材。於底部15上,載置後述的複數土台部22。各個土台部22,可以被固定於底部15,抑或沒固定。The
室頂部16,例如平面俯視為矩形狀,被設置接續於側壁14的上端,密封第1室11的上部。室頂部16係與底部15平行。室頂部16,係在懸吊後述的上部加熱部18的狀態予以支撐。亦即,成為於室頂部16的下面、與上部加熱部18的上面之間設置間隙(間隔)D的狀態。室頂部16係具有抽氣口16a。第1室11內的氣體係透過抽氣口16a而被排出去。抽氣口16a,例如平面俯視下,被設置在重疊於第1室11所收容的基板S的中央或大致中央之位置。The
加熱部17,係將第1室11所收容的基板S由下方予以加熱。加熱部17,例如平面俯視下為圓板狀的熱板,具有比第1室11所收容的基板S要大的直徑(參照圖2)。加熱部17,上面17a為平面狀,與例如底部15及室頂部16平行。加熱部17,係具有供配置後述的基板升降部19的銷19a用的貫通孔17b。貫通孔17b,係將加熱部17上下貫通而設置。貫通孔17b,於本實施型態設置例如3個。貫通孔17b,被用為供把外氣導入第1室11內用之導入路。The
圖2係顯示第1室11的內部之一例之平面圖。如圖2所示,3個貫通孔17b,平面俯視於對應加熱部17的中心位置成為重心位置的正三角形的各頂點之位置各被配置1個。或者,3個貫通孔17b,在以加熱部17的中心位置為中心的圓周上等間隔被配置。又,貫通孔17b,係對應於後述的基板升降部19的銷19a而設置,銷19a為4個以上之場合,則對應銷19a而設置4處以上。FIG. 2 is a plan view showing an example of the interior of the
於加熱部17的上面17a,設置固定銷17c。固定銷17c,上端用於載置基板S。於本實施型態,固定銷17c配置例如4個。4個固定銷17c,平面俯視於加熱部17中心的位置、以及對應以加熱部17的中心為重心位置的正三角形的3個頂點之位置各被配置1個,設置共計4個。除了設於加熱部17中心的固定銷17c以外的3個固定銷17c,係在以加熱部17的中心位置為中心的圓周上等間隔被配置。被配置這3個固定銷17c的圓周,係與配置前述的3個貫通孔17b(3個銷19a)的圓周不同,但也可以是設置在與固定銷17c與貫通孔17b相同的圓周上。固定銷17c的上端,係設置成比後述的銷19a上升時的上端要低。On the
加熱部17,係於配置在第2室12的框架21被支撐著。框架21,係具有框架底部21a、框架側部21b及凸緣部21c。框架底部21a為圓板狀,由複數土台部22支撐著。於框架底部21a,具有複數貫通孔21d。貫通孔21d,係與加熱部17的貫通孔17b連通,且配置銷19a。框架側部21b,係沿著框架底部21a的外周圓筒狀地設置。凸緣部21c,係設置成由框架側部21b的上端朝外側伸出去。加熱部17,係在被收容於框架21的狀態於框架21被支撐著。The
上部加熱部18,係設置於第1室11,將第1室11所收容的基板S由上方予以加熱。上部加熱部18,係使用例如熱板等。上部加熱部18,例如平面俯視下為圓板狀的熱板,具有比第1室11所收容的基板S要大的直徑。上部加熱部18,係在由室頂部16懸吊著的狀態下被固定,且配置於基板S的上方。於本實施型態,上部加熱部18係配置於抽氣口16a與基板S之間。上部加熱部18,係在與室頂部16之間設置間隙D的狀態下配置。因此,由抽氣口16a抽氣的場合,第1室11內的氣體,在由上部加熱部18的側緣側沿著上面側流過間隙D之後,會到達抽氣口16a。The
基板升降部19,係使第1室11所收容的基板S升降。基板升降部19,係具有複數銷19a、支撐複數銷19a的銷支撐部19b、以及使複數銷19a升降的銷驅動部19c。銷19a,於上端可以載置基板S。銷19a,係於固定銷17c載置基板S、或收到固定銷17c載置的基板S時使用。複數銷19a,平面俯視於對應以加熱部17的中心為重心位置的正三角形的3個頂點之位置各被配置1個。複數銷19a,係在貫通加熱部17的貫通孔17b的狀態下配置,各個都於貫通孔17b內可升降。複數銷19a,於上升時由加熱部17的上面17a朝第1室11內突出,於下降時由加熱部17的上面17a沒入。The substrate raising and lowering
如前述,於銷19a上升時銷19a的上端會比固定銷17c的上端要高。從而,於銷19a上升時被載置於銷19a上的基板S,可以藉由銷19a下降而使載置於固定銷17c。此外,可以藉由銷19a上升,而收到被載置於固定銷17c的基板S。As mentioned above, when the
各銷19a的外徑,係比貫通孔17b的內徑還小。因此,於複數銷19a被插入貫通孔17b的狀態,於銷19a的外周面與貫通孔17b的內周面之間會形成間隙K。第1室11與第2室12之間,透過此間隙K而被連通。間隙K,係用以把外部氣體導入第1室11內之導入路。間隙K的大小可以任意設定,藉由調整銷19a的外徑、或貫通孔17b的內徑可以調整間隙K的大小。The outer diameter of each
銷支撐部19b為例如板狀,且於上面側固定著複數銷19a的下端。銷支撐部19b,係配置於第2室12內的下部側。銷支撐部19b,深側的端部由升降用開口部14b朝第2室12的外部突出而配置。銷支撐部19b,係可以依照未圖示的導件等導引而升降,與複數銷19a一體地升降。藉由複數銷19a被固定於1個銷支撐部19b,可藉由使銷支撐部19b升降,而同時或幾乎同時地升降複數銷19a。The
銷驅動部19c,係藉由使銷支撐部19b升降,而升降複數銷19a。銷驅動部19c,係配置於第2室12的外部。銷驅動部19c,係具有例如氣缸裝置、電動馬達等驅動源,藉由此驅動源之驅動力而使銷支撐部19b(銷19a)升降。又,基板升降部19,為升降銷19a的構成即可,並不以前述的構成為限。例如,用電動馬達等驅動源並透過齒條與齒輪(rack and pinion)機構、或齒輪組而使各銷19a升降之構成亦可適用。The
擋門20係開閉基板用開口部14a。圖3係顯示開放基板用開口部14a的狀態之圖。圖4係顯示閉塞基板用開口部14a的狀態之圖。以及圖4係顯示擋門20及擋門驅動部23的動作之一例。圖3係顯示擋門20被配置於開放位置P1之狀態。圖4係顯示擋門20被配置於閉塞位置P2之狀態。The
如圖3及圖4所示,擋門20係可以在開放基板用開口部14a的開放位置P1、與閉塞基板用開口部14a的閉塞位置P2之間移動。擋門20,係使用被設置成可以閉塞基板用開口部14a的大小之板狀構件。在開放位置P1,擋門20係由基板用開口部14a的前後方向朝下方退避。在閉塞位置P2,擋門20係抵接於基板用開口部14a的周緣而加以密封。又,擋門20,可以於抵接基板用開口部14a周緣的部分設置氣密用密封構件。As shown in FIG. 3 and FIG. 4, the
擋門20,係藉由擋門驅動部23而在開放位置P1與閉塞位置P2之間移動。擋門驅動部23,係具有使擋門20於上下方向移動(使升降)的升降驅動部23a、與使擋門20於前後方向(水平方向)移動之水平驅動部23b。升降驅動部23a及水平驅動部23b的各個,係使用例如氣缸機構等。升降驅動部23a,係具備於上下方向延伸的導引部23c。升降驅動部23a,係沿著導引部23c而升降。升降驅動部23a,係使擋門20朝上側的位置或下側的位置移動。The
水平驅動部23b,係設置於升降驅動部23a,與升降驅動部23a一體地沿著導引部23c而升降。水平驅動部23b,係具備於前後方向前進後退的傳達構件23d。傳達構件23d,係沿著設置於升降驅動部23a的導引部23e於前後方向前進或後退。擋門20,係透過傳達構件23d而被接續於水平驅動部23b。水平驅動部23b,係藉由傳達構件23d前進或後退,而使擋門20朝前側的位置或後側的位置移動。The
如圖3所示,藉由利用升降驅動部23a使擋門20配置於下側、利用水平驅動部23b使擋門20配置於前側,可以將擋門20配置於開放位置P1。擋門20被配置於開放位置P1之場合,形成基板用開口部14a被開放之狀態。此場合,藉由例如未圖示的基板搬送機構等,可以透過基板用開口部14a而進行對第1室11內的基板S搬入或搬出。As shown in FIG. 3, the
此外,如圖4所示,藉由利用升降驅動部23a使擋門20配置於上側、利用水平驅動部23b使擋門20配置於後側,可以將擋門20配置於閉塞位置P2。擋門20被配置於閉塞位置P2之場合,形成基板用開口部14a被閉塞之狀態。此場合,調節氣體(空氣、外氣)由基板用開口部14a往真空室10內的流出及流入。亦即,於第1室11,調節來自側壁14的氣體的流出及流入。In addition, as shown in FIG. 4, the
抽氣部30,係在真空室10內抽氣。抽氣部30,係使用例如抽氣泵。抽氣部30,係由被設於第1室11的室頂部16的抽氣口16a抽氣第1室11內的氣體。由抽氣部30的抽氣量、抽氣定時,可以是藉由未圖示的控制裝置來控制,抑或藉由作業者等的手動操作而被設定。例如,未圖示的控制裝置,可以是不管擋門20的位置,而時常驅動抽氣部30,抑或是在擋門20被配置於閉塞位置P2的時點(閉塞基板用開口部14a的時點)下驅動抽氣部30。利用抽氣部30由真空室10內被抽氣的氣體會朝蓋40內放出。此外,真空室10內,蓋40內的氣體會流入。針對往真空室10內的氣體流入,敘述於後。The
蓋40,係設置成包圍被配置真空室10的空間。蓋40,例如,也可以設置成包圍包含真空室10(加熱裝置100)以外的裝置之空間。蓋40,可以是例如無塵室等。蓋40內的氣體,係藉由排出裝置50而往外部被排出。作為排出裝置50,可使用例如風扇等。真空室10內的氣體,會往蓋40內被放出,與蓋40內的氣體一起藉由排出裝置50往外部排氣。The
圖5及圖6係擴大顯示真空室10的一部分之圖。圖5係顯示真空室10後側部分之剖面圖,圖6係顯示真空室10前側端部之剖面圖。藉由抽氣部30進行真空室10內的第1室11抽氣,如圖5及圖6所示,外氣會被導入真空室10內。又,圖5及圖6,顯示藉由抽氣部30於真空室10內抽氣時,擋門20被配置於閉塞位置P2之狀態。伴隨第1室11內的氣體透過抽氣口16a而往真空室10外部被排出,藉由擋門20被閉塞的第1室11內會成為負壓。5 and 6 are enlarged views showing a part of the
藉由第1室11內成為負壓,如圖5所示,第2室12內的氣體透過加熱部17的貫通孔17b及框架21的貫通孔21d、與複數銷19a之間隙K(導入路)而流入第1室11。結果,第2室12成為負壓,外氣A透過升降用開口部14b而使外氣A流入第2室12內。從而,由升降用開口部14b流入第2室12內的外氣A,係透過導入路之間隙K而被導入第1室11。With the negative pressure in the
被導入第1室11內的外氣A,係如圖5及圖6之各個所示,沿著基板S的下面向側方(向放射方向的外側)流去,於第1室11內以環繞基板S的緣部的方式上升。上升的外氣A,係由上部加熱部18的緣部繞到上部加熱部18的上方,通過室頂部16與上部加熱部18的間隙D流向抽氣口16a。亦即,於間隙D,外氣A係由上部加熱部18的緣部向放射方向的外側流動。到達抽氣口16a的外氣A,係透過抽氣口16a而朝真空室10的外部被放出。The outside air A introduced into the
以此方式,於真空室10內,作為外氣A流動的路徑,形成由升降用開口部14b到間隙K的路徑,經過間隙K流入第1室11內的路徑,由間隙K沿著基板S的下面流向基板S的緣部的路徑,環繞基板S的緣部而流入間隙D的路徑,以及流過間隙D到達抽氣口16a的路徑。作為外氣A被導入第1室11內的導入路,使用間隙K。此間隙K,為第1室11與第2室12的邊界且平面俯視下配置於被收容於第1室11的基板S的內側。因此,在第1室11內,便形成前述的路徑這樣的外氣A的路徑。In this way, in the
圖7(A)係顯示把被塗布接著劑的基板S用相關於本實施型態的加熱裝置100加熱的場合之接著劑的膜厚之一例之圖,圖7(B)係顯示使用相關於比較例的加熱裝置加熱基板S的場合之接著劑的膜厚之一例之圖。圖7(A)及(B)係顯示於基板S接著劑的膜厚分布之圖。圖7(A)及(B)之圖中,橫軸為基板S前後方向的位置,縱軸為接著劑的膜厚。如圖7(A)所示,本實施型態,係如前述方式,由第2室12流入第1室11的外氣A,會由基板S的緣部流向室頂部16的抽氣口16a,所以接著劑的膜厚於基板S的從前側端部到後側端部之離散小,整面基板S全體形成大致均勻的膜厚。FIG. 7(A) is a diagram showing an example of the film thickness of the adhesive when the substrate S to which the adhesive is applied is heated by the
此外,本實施型態中,由基板S的緣部環繞的外氣A,會流過室頂部16與上部加熱部18的間隙D的緣故,由於流過接著層表面側的外氣A沒有或很少,所以使加熱後的接著劑之膜厚的離散很小。In addition, in this embodiment, the outside air A surrounded by the edge of the substrate S flows through the gap D between the top 16 of the chamber and the
另一方面,圖7(B)所示之例,係顯示於收容基板S的第1室11,並沒有調節來自側壁14的外氣的流通之構成,再者,使用沒有隔開部13的加熱裝置來加熱基板S之場合。相關於此比較例的加熱裝置,係藉由將真空室10的周圍排氣,而將真空室10內的氣體往真空室10外排出。此時,外氣係由真空室10側壁14的間隙、或擋門20與側壁14的間隙流入第1室11內,例如,形成外氣於第1室11內由前側流向後側之狀態。On the other hand, the example shown in FIG. 7(B) is shown in the
結果,在相關於比較例的加熱裝置,於基板S的表面上有形成外氣流動之場合,例如,外氣流動於一方向上橫切過基板S的表面上的話,有發生溶媒揮發後的接著層的膜厚離散之場合。外氣流動由基板S的前側於一方向流向後側的話,如圖7(B)所示,導致與基板S的其他區域相比,後側端部之膜厚增加。在本實施型態,藉由使用前述的加熱裝置100加熱基板S,可以抑制接著層的膜厚離散。As a result, in the heating device of the comparative example, when there is a flow of external air on the surface of the substrate S, for example, if the external air flows across the surface of the substrate S in one direction, there may be adhesion after the solvent volatilizes. When the film thickness of the layer is discrete. If the outside air flows from the front side of the substrate S to the rear side in one direction, as shown in FIG. 7(B), the film thickness of the rear end portion of the substrate S increases compared to other regions of the substrate S. In this embodiment, by heating the substrate S by using the
圖8係顯示相關於本實施型態之基板處理系統200之一例之圖。如圖8所示,基板處理系統200係具備塗布裝置110、加熱裝置100、與黏貼裝置120。塗布裝置110,係對以加熱裝置100被加熱前的基板S塗布接著劑。塗布裝置110,藉由例如旋轉塗布法於基板S塗布接著劑,形成接著層。又,塗布裝置110,也可以藉由浸漬法、滾筒刮刀法、刮刀法、噴霧法、狹縫噴嘴法等的其他塗布法等形成接著層。黏貼裝置120,係對以加熱裝置100被加熱後的基板S黏貼玻璃等支撐體。塗布裝置110及黏貼裝置120,可以是不設置至少一方的構成。FIG. 8 is a diagram showing an example of the
圖9係顯示基板處理系統之其他例之圖。圖9所示的基板處理系統200A中,相對於基板處理系統200,具有複數配置加熱裝置100之構成。此場合,對於塗布裝置110及黏貼裝置120之處理,加熱裝置100的處理上費時之場合,藉由複數設置加熱裝置100,可以藉複數加熱裝置100並列進行基板S的加熱。因此,可以縮短基板處理系統200A之全體上基板S的處理時間。Fig. 9 is a diagram showing another example of the substrate processing system. The
圖10係顯示相關於本實施型態之基板處理方法之一例之流程圖。如圖10所示,本實施型態係包含:對基板S塗布接著劑之步驟(步驟S01)、加熱基板之步驟(步驟S02)、對支撐體形成分離層之步驟(步驟S03)、反轉支撐體之步驟(步驟S04)、與黏貼基板S與支撐體之步驟(步驟S05)。FIG. 10 is a flowchart showing an example of a substrate processing method related to this embodiment. As shown in FIG. 10, this embodiment includes: the step of applying an adhesive to the substrate S (step S01), the step of heating the substrate (step S02), the step of forming a separation layer on the support (step S03), and the inversion The step of supporting the body (step S04), and the step of pasting the substrate S and the supporting body (step S05).
圖11(A)係顯示步驟S01的動作之一例之圖。圖11(A)係顯示於基板S塗布接著層的動作之圖,圖11(B)係顯示被塗布接著劑的基板S之一例之圖。如圖11(A)所示,步驟S01,係例如將基板S保持於未圖示的載物台上,由噴嘴等吐出用以於基板S的形成面Sa形成接著層61之液狀體。在此狀態下藉由使載物台旋轉,液狀體於基板S的形成面Sa上擴展,如圖11(B)所示,於基板S的形成面Sa上形成接著層61。Fig. 11(A) is a diagram showing an example of the operation of step S01. FIG. 11(A) is a diagram showing the operation of applying an adhesive layer to the substrate S, and FIG. 11(B) is a diagram showing an example of the substrate S to which the adhesive is applied. As shown in FIG. 11(A), step S01 is to hold the substrate S on a stage (not shown), and eject a liquid for forming the
基板S,例如,使用厚度為600~800μm的圓形狀或大致圓形狀之半導體晶圓。半導體晶圓的厚度是任意的。此外,基板S,也可以取代半導體晶圓,例如,使用厚度為500~1500μm的玻璃板等。基板S並不以圓形狀或大致圓形狀為限,例如,也可以是矩形狀、橢圓形狀、多角形狀等其他形狀。For the substrate S, for example, a circular or substantially circular semiconductor wafer having a thickness of 600 to 800 μm is used. The thickness of the semiconductor wafer is arbitrary. In addition, the substrate S may be substituted for the semiconductor wafer, for example, a glass plate having a thickness of 500 to 1500 μm or the like may be used. The substrate S is not limited to a circular shape or a substantially circular shape. For example, it may be a rectangular shape, an elliptical shape, a polygonal shape, or other shapes.
作為接著劑,可以使用例如丙烯酸系、酚醛清漆系、萘醌系、碳化氫系、聚醯亞胺系、彈性體等之、於該領域公知的種種接著劑。作為接著層61所含有的樹脂,具備接著性者即可,例如,可舉出碳化氫樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂等、或組合這些樹脂者等。As the adhesive, various adhesives known in the art, such as acrylic, novolac, naphthoquinone, hydrocarbon, polyimide, elastomer, etc., can be used. The resin contained in the
接著劑的熔點,可以依前述樹脂的種類或分子量、及對接著劑的可塑劑等配合物之不同而變化。前述接著劑所含有的樹脂的種類或分子量,可以因應基板及支撐體的種類而適當選擇,但接著劑所使用的樹脂的熔點,在50℃以上、300℃以下的範圍內為佳。藉由接著劑所使用的樹脂的熔點在50℃以上、300℃以下的範圍內,可以抑制加熱時之接著層的流動性。此外,接著層61的熔點,可以適當地、藉由配合可塑劑或低聚合度的樹脂等而予以調整。熔點,例如,可以使用公知的微差掃描熱量測定裝置(DSC)而予以測定。The melting point of the adhesive may vary depending on the type or molecular weight of the aforementioned resin, and the plasticizer for the adhesive and other complexes. The type or molecular weight of the resin contained in the aforementioned adhesive can be appropriately selected according to the types of the substrate and the support, but the melting point of the resin used in the adhesive is preferably within the range of 50°C or higher and 300°C or lower. When the melting point of the resin used in the adhesive is in the range of 50°C or higher and 300°C or lower, the fluidity of the adhesive layer during heating can be suppressed. In addition, the melting point of the
(碳化氫樹脂) 碳化氫樹脂,係具有碳化氫骨架,且聚合單體組成物而成的樹脂。作為碳化氫樹脂,可舉出環烯烴系聚合物(以下,稱為「樹脂(A)」),以及由萜烯樹脂、松香系樹脂及石油樹脂所構成的群所選擇出的至少1種樹脂(以下,稱為「樹脂(B)」)等,但並不以此為限。(Hydrocarbon resin) Hydrocarbon resin is a resin that has a hydrocarbon skeleton and polymerized monomer composition. Examples of hydrocarbon resins include cycloolefin-based polymers (hereinafter referred to as "resin (A)"), and at least one resin selected from the group consisting of terpene resins, rosin-based resins, and petroleum resins (Hereinafter referred to as "resin (B)") etc., but not limited to this.
作為樹脂(A),可以是聚合含環烯烴系單體的單體成分而成之樹脂。具體而言,可舉出含環烯烴系單體的單體成分之開環(共)聚合體、附加(共)聚合含環烯烴系單體的單體成分之樹脂等。The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin-based monomer. Specifically, the ring-opening (co)polymer of the monomer component containing the cycloolefin-based monomer, the resin to which the monomer component containing the cycloolefin-based monomer is additionally (co)polymerized, etc. are mentioned.
包含於構成樹脂(A)的單體成分的前述環烯烴系單體,可以舉出例如降冰片烯、降冰片二烯等二環體,雙環戊二烯、二羥基戊二烯等三環體,四環十二碳烯等四環體,環戊二烯三量體等五環體,四環戊二烯等七環體,或者這些多環體之烷基(甲基、乙基、丙基、丁基等)置換體,鏈烯基(乙烯基等)置換體,亞炔基(亞乙基等)置換體,芳基(苯基、對甲苯基、萘基等)置換體等。其中特別以降冰片烯、四環十二碳烯,或者這些的烷基置換體所構成的群所選擇之降冰片烯系單體為較佳。The aforementioned cycloolefin-based monomers contained in the monomer component constituting the resin (A) include, for example, bicyclics such as norbornene and norbornadiene; tricyclics such as dicyclopentadiene and dihydroxypentadiene. , Tetracyclododecene and other tetracyclic bodies, pentacyclic bodies such as cyclopentadiene tertiary bodies, heptacyclic bodies such as tetracyclopentadiene, or the alkyl groups of these polycyclic bodies (methyl, ethyl, propyl (E.g., butyl, etc.) substitution, alkenyl (vinyl, etc.) substitution, alkynylene (ethylene, etc.) substitution, aryl (phenyl, p-tolyl, naphthyl, etc.) substitution, etc. Among them, norbornene-based monomers selected from the group consisting of norbornene, tetracyclododecene, or these alkyl substitution products are particularly preferred.
構成樹脂(A)的單體成分,可以是含有前述的環烯烴系單體與可以共聚合的其他單體,例如,含有烯烴單體為佳。作為烯烴單體,例如,可舉出乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。烯烴單體可以是直鏈狀,抑或是分歧鏈狀。The monomer component constituting the resin (A) may contain the aforementioned cycloolefin-based monomer and other monomers that can be copolymerized. For example, it is preferable to contain an olefin monomer. Examples of olefin monomers include ethylene, propylene, 1-butene, isobutene, 1-hexene, and α-olefins. The olefin monomer can be linear or branched.
此外,作為構成樹脂(A)的單體成分,含有環烯烴單體,由高耐熱性(低熱分解、熱重量減少性)之觀點而言佳。環烯烴單體對構成樹脂(A)的單體成分全體之比例,為5莫耳%(莫耳百分比)以上佳,10莫耳%以上較佳,20莫耳%以上更佳。此外,環烯烴單體對構成樹脂(A)的單體成分全體之比例,並未特別限定,但由溶解性及在溶液的常時安定性之觀點而言,80莫耳%以下為佳,70莫耳%以下更佳。In addition, as a monomer component constituting the resin (A), a cycloolefin monomer is contained, and it is preferable from the viewpoint of high heat resistance (low thermal decomposition, thermal weight reduction). The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is preferably 5 mol% (mole percentage) or more, preferably 10 mol% or more, and more preferably 20 mol% or more. In addition, the ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is not particularly limited, but from the viewpoint of solubility and stability in solution, 80 mol% or less is preferred, and 70 mol% or less is preferred. Mole% or less is better.
此外,作為構成樹脂(A)的單體成分,也可以含有直鏈狀或分歧鏈狀的烯烴單體。烯烴單體對構成樹脂(A)的單體成分全體之比例,由溶解性及柔軟性的觀點而言,為10~90莫耳%佳,20~85莫耳%較佳,30~80莫耳%更佳。In addition, as a monomer component constituting the resin (A), a linear or branched olefin monomer may be contained. The ratio of the olefin monomer to the total monomer components constituting the resin (A), from the viewpoint of solubility and flexibility, is preferably 10 to 90 mol%, preferably 20 to 85 mol%, and 30 to 80 mol%. Ear% is better.
又,樹脂(A),例如,像由環烯烴系單體與烯烴單體所構成的單體成分聚合而構成的樹脂,不具有極性基的樹脂,在抑制高溫下發生氣體的方面是佳的。In addition, resin (A), such as a resin formed by polymerizing monomer components composed of cycloolefin monomer and olefin monomer, does not have a polar group, and is preferable in terms of suppressing gas generation at high temperatures. .
針對聚合單體成分時的聚合方法或聚合條件等,並無特別限制,依照常法是當設定即可。There are no particular restrictions on the polymerization method or polymerization conditions when polymerizing the monomer components, and it may be set according to the usual method.
作為可以用作樹脂(A)的市售品,例如,可舉出POLYPLASTICS CO., LTD.製造的「TOPAS」、三井化學(股)公司製造的「APEL」、日本ZEON(股)公司製造的「ZEONOR」及「ZEONEX」、JSR(股)公司製造的「ARTON」等。Examples of commercially available products that can be used as resin (A) include "TOPAS" manufactured by POLYPLASTICS CO., LTD., "APEL" manufactured by Mitsui Chemicals Co., Ltd., and manufactured by ZEON Co., Ltd. "ZEONOR" and "ZEONEX", "ARTON" manufactured by JSR Corporation, etc.
樹脂(B),係由萜烯系樹脂、松香系樹脂及石油樹脂所構成的群所選擇出的至少1種樹脂。具體而言,作為萜烯系樹脂,例如,可舉出萜烯樹脂、萜烯苯酚樹脂、變性萜烯樹脂、氫化萜烯樹脂、氫化萜烯苯酚樹脂等。作為松香系樹脂,例如,可舉出松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、變性松香等。作為石油樹脂,例如,脂肪族或芳香族石油樹脂、氫化石油樹脂、變性石油樹脂、脂環族石油樹脂、苯并呋喃-茚石油樹脂等。這些之中,氫化萜烯樹脂、氫化石油樹脂為更佳。The resin (B) is at least one resin selected from the group consisting of terpene-based resin, rosin-based resin, and petroleum resin. Specifically, as terpene-based resins, for example, terpene resins, terpene phenol resins, denatured terpene resins, hydrogenated terpene resins, hydrogenated terpene phenol resins, and the like can be cited. Examples of rosin-based resins include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. As the petroleum resin, for example, aliphatic or aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone-indene petroleum resin, and the like. Among these, hydrogenated terpene resin and hydrogenated petroleum resin are more preferable.
樹脂(B)的重量平均分子量並無特別限定,但以300~3,000為佳。樹脂(B)的重量平均分子量為300以上的話,耐熱性充分,於高溫環境下脫氣量少。另一方面,樹脂(B)的重量平均分子量為3,000以下的話,剝離層積體時的剝離速度良好。又,本實施型態之樹脂(B)的重量平均分子量,意味藉由凝膠浸透色層分析法(GPC)來測定之聚苯乙烯換算之分子量。The weight average molecular weight of the resin (B) is not particularly limited, but is preferably 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of outgassing in a high-temperature environment is small. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the peeling speed when peeling the laminate is good. In addition, the weight average molecular weight of the resin (B) in this embodiment means the molecular weight in terms of polystyrene measured by gel penetration chromatography (GPC).
又,作為樹脂,可以使用混合樹脂(A)與樹脂(B)之樹脂。藉由混合,使耐熱性及剝離速度良好。例如,樹脂(A)與樹脂(B)的混合比例為(A):(B)=80:20~55:45(質量比),由於剝離速度、高溫環境時的耐熱性、及柔軟性優異所以佳。In addition, as the resin, a resin in which the resin (A) and the resin (B) are mixed can be used. By mixing, heat resistance and peeling speed are good. For example, the mixing ratio of resin (A) and resin (B) is (A):(B)=80:20~55:45 (mass ratio), due to the excellent peeling speed, heat resistance in high temperature environment, and flexibility So good.
(丙烯酸-苯乙烯系樹脂) 作為丙烯酸-苯乙烯系樹脂,例如,可舉出將苯乙烯或苯乙烯的衍生物、(甲基)丙烯酸酯等用作單體而聚合之樹脂。(Acrylic-styrene resin) Examples of acrylic-styrene resins include resins polymerized by using styrene or styrene derivatives, (meth)acrylates, etc., as monomers.
作為(甲基)丙烯酸酯,例如,可舉出由鏈式構造所構成的(甲基)丙烯酸烷酯、具有脂肪族環的(甲基)丙烯酸酯、具有芳香族環的丙烯酸酯。作為由鏈式構造所構成的(甲基)丙烯酸烷酯,可舉出碳數15~20的具有烷基的丙烯酸系長鏈烷酯,碳數1~14的具有烷基的丙烯酸系烷酯等。作為丙烯酸系長鏈烷酯,可舉出烷基為n-十五基、n-十六基、n-十七基、n-十八基、n-十九基、n-二十基等之丙烯酸或甲基丙烯酸的烷酯。又,該烷基可以是分歧狀。Examples of (meth)acrylates include alkyl (meth)acrylates composed of a chain structure, (meth)acrylates having an aliphatic ring, and acrylates having an aromatic ring. Examples of (meth)acrylic acid alkyl esters composed of a chain structure include long-chain acrylic acid-based alkyl esters having an alkyl group having 15 to 20 carbon atoms, and acrylic acid-based alkyl esters having an alkyl group having 1 to 14 carbon atoms. Wait. Examples of long-chain acrylic acid-based alkyl esters include n-pentadecyl, n-hexadecyl, n-heptadecanyl, n-octadecyl, n-nonadecyl, n-eicosyl, etc. The alkyl ester of acrylic acid or methacrylic acid. In addition, the alkyl group may be branched.
碳數1~14的具有烷基的丙烯酸系烷酯,可以舉出使用於既有的丙烯酸系接著劑的習知的丙烯酸系烷基酯。例如,烷基可以舉出由甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二基、月桂基、十三基等所構成的丙烯酸或甲基丙烯酸之烷基酯。The acrylate alkyl ester having an alkyl group having 1 to 14 carbon atoms includes conventional acrylate alkyl esters used in existing acrylic adhesives. For example, the alkyl group includes methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, lauryl, tridecyl, etc. Alkyl ester of acrylic acid or methacrylic acid.
具有脂肪族環的(甲基)丙烯酸酯,可以舉出(甲基)丙烯酸環己酯、(甲基)丙烯酸環戊酯、(甲基)丙烯酸1-金剛烷基酯、(甲基)丙烯酸降冰片酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸三環癸酯、(甲基)丙烯酸四環十二酯、(甲基)丙烯酸二環戊酯等,而以甲基丙烯酸異莰酯、(甲基)丙烯酸二環戊酯為較佳。The (meth)acrylates having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, and (meth)acrylic acid Norbornyl ester, isobornyl (meth)acrylate, tricyclodecyl (meth)acrylate, tetracyclododecyl (meth)acrylate, dicyclopentyl (meth)acrylate, etc., and methacrylic acid Isobornyl and dicyclopentyl (meth)acrylate are preferred.
具有芳香環的(甲基)丙烯酸酯,沒有特別限定,芳香環可以舉出例如苯基、苄基、對甲苯基、二甲苯基、聯苯基、萘基、蒽基、苯氧甲基、苯氧乙基等。此外,芳香環亦可具有碳數1~5的鏈狀或分歧狀的烷基。具體而言,以丙烯酸苯氧乙酯為佳。The (meth)acrylate having an aromatic ring is not particularly limited. Examples of the aromatic ring include phenyl, benzyl, p-tolyl, xylyl, biphenyl, naphthyl, anthryl, phenoxymethyl, Phenoxyethyl and so on. In addition, the aromatic ring may have a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.
(馬來醯亞胺系樹脂) 馬來醯亞胺系樹脂,例如,可以舉出作為單體,將N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-正丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-正丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-二級丁基馬來醯亞胺、N-三級丁基馬來醯亞胺、N-正戊基馬來醯亞胺、N-正己基馬來醯亞胺、N-正庚基馬來醯亞胺、N-正辛基馬來醯亞胺、N-十二烷基馬來醯亞胺、N-十八烷基馬來醯亞胺等具有烷基的馬來醯亞胺、N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等具有脂肪碳化氫基的馬來醯亞胺、N-苯基馬來醯亞胺、N-m-甲基苯基馬來醯亞胺、N-o-甲基苯基馬來醯亞胺、N-p-甲基苯基馬來醯亞胺等具有芳基的芳香族馬來醯亞胺等予以聚合而得的樹脂。(Maleimide resin) Maleimide resins, for example, as monomers, N-methylmaleimide, N-ethylmaleimide, N-n-propylmaleimide, N -Isopropyl maleimide, N-n-butyl maleimide, N-isobutyl maleimide, N-secondary butyl maleimide, N-tertiary butyl Maleimide, N-pentylmaleimide, N-hexylmaleimide, N-heptylmaleimide, N-octylmaleimide, N -Lauryl maleimide, N-octadecyl maleimide and other maleimide having alkyl groups, N-cyclopropyl maleimide, N-cyclobutyl maleimide Leximine, N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, etc. have fat Hydrocarbon-based maleimide, N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenyl A resin obtained by polymerizing aromatic maleimines having an aryl group such as maleimines.
例如,可以是把下列化學式[化1]所表示的反覆單位以及下列化學式[化2]所表示的反覆單位之共聚物之環烯烴共聚物作為接著成分之樹脂使用。For example, it is possible to use a cycloolefin copolymer of a repeating unit represented by the following chemical formula [Chem. 1] and a copolymer of the repeating unit represented by the following chemical formula [Chemical 2] as the resin of the subsequent component.
[化學式1] [Chemical formula 1]
[化學式2] [Chemical formula 2]
(前述化學式[化2]中,n為0或1~3之整數) 這樣的環烯烴共聚物,可以使用APL 8008T、APL 8009T、及APL 6013T(全為三井化學(股)製造)等。(In the aforementioned chemical formula [Chemical 2], n is 0 or an integer of 1 to 3) As such a cycloolefin copolymer, APL 8008T, APL 8009T, APL 6013T (all manufactured by Mitsui Chemicals Co., Ltd.), etc. can be used.
(彈性體) 彈性體,以含有苯乙烯單位作為主鏈的構成單位為佳,該「苯乙烯單位」可以是具有置換基。作為置換基,例如,可舉出碳數1~5的烷基、碳數1~5的烷氧基、碳數1~5的烷氧烷基、乙醯氧基、羧基等。此外,該苯乙烯單位的含量在14重量%(重量百分比)以上、50重量%以下的範圍內更佳。再者,彈性體的重量平均分子量在10,000以上、200,000以下之範圍內為佳。(Elastomer) The elastomer preferably contains a styrene unit as a structural unit of the main chain, and the "styrene unit" may have a substitution group. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an acetoxy group, and a carboxyl group. In addition, the content of the styrene unit is more preferably within a range of 14% by weight (% by weight) or more and 50% by weight or less. Furthermore, the weight average molecular weight of the elastomer is preferably within the range of 10,000 or more and 200,000 or less.
苯乙烯單位的含量在14重量%以上、50重量%以下的範圍內,且彈性體的重量平均分子量在10,000以上、200,000以下之範圍內的話,於後述之碳化氫系的溶劑容易溶解,所以可容易且迅速地除去第一接著劑層。此外,藉由苯乙烯單位的含量及重量平均分子量在前述範圍內,在晶圓進行光阻劑光蝕刻步驟處理時對暴露的光阻劑溶劑(例如PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH等)發揮優異的耐受性。If the content of the styrene unit is within the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less, it is easy to dissolve in the hydrocarbon-based solvent described later, so it can be The first adhesive layer is easily and quickly removed. In addition, since the content of styrene units and the weight average molecular weight are within the aforementioned range, the photoresist solvent (such as PGMEA, PGME, etc.) and acid (hydrofluoric acid) exposed during the photoresist photoetching step of the wafer Etc.), alkali (TMAH, etc.) exerts excellent tolerance.
又,於彈性體,進而混合前述之(甲基)丙烯酸酯亦可。In addition, the aforementioned (meth)acrylate may be further mixed with the elastomer.
此外,苯乙烯單位的含量,較佳為17重量%以上,此外,更佳為40重量%以下。In addition, the content of the styrene unit is preferably 17% by weight or more, and more preferably 40% by weight or less.
重量平均分子量較佳的範圍為20,000以上、此外較佳的範圍為150,000以下。A preferable range of the weight average molecular weight is 20,000 or more, and a more preferable range is 150,000 or less.
作為彈性體,苯乙烯單位的含量為14重量%以上、50重量%以下的範圍內,彈性體的重量平均分子量在10,000以上、200,000以下的範圍內的話,可使用種種彈性體。例如,可以使用聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、及這些之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEEPS)、苯乙烯嵌段為反應架橋型的苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(Septon V9461(Kuraray股份公司製造))、苯乙烯嵌段為反應架橋型的苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性的聚苯乙烯系硬嵌段的SeptonV9827(Kuraray股份公司製造)等,且苯乙烯單位的含量及重量平均分子量在上述範圍內者。As the elastomer, the content of the styrene unit is within the range of 14% by weight or more and 50% by weight or less, and if the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less, various elastomers can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer can be used Block copolymer (SBS), styrene-butadiene-butylene-styrene block copolymer (SBBS), and their hydrogenated products, styrene-ethylene-butylene-styrene block copolymer (SEBS) , Styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer ( SEEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer (Septon V9461 (manufactured by Kuraray Co., Ltd.)) in which the styrene block is a reaction bridge type, and the styrene block is a reaction bridge type styrene- Ethylene-butylene-styrene block copolymer (Septon V9827 (manufactured by Kuraray Co., Ltd.) having a reactive polystyrene-based hard block, etc., and the content of the styrene unit and the weight average molecular weight are within the above-mentioned ranges.
此外,彈性體之中氫化物為更佳。氫化物的話,對熱的安定性提升,不易引起分解或聚合等變質。此外,由對碳化氫系溶劑的溶解性及對光阻劑溶劑的耐受性之觀點而言也是更佳。In addition, hydrides are more preferable among elastomers. In the case of hydride, heat stability is improved, and it is unlikely to cause deterioration such as decomposition or polymerization. In addition, it is better from the viewpoint of solubility to hydrocarbon solvents and resistance to photoresist solvents.
此外,彈性體之中兩端為苯乙烯的嵌段聚合物者更佳。藉由將熱安定性高的苯乙烯嵌段於兩末端顯示更高的耐熱性的緣故。In addition, a block polymer with styrene at both ends of the elastomer is more preferable. The high heat stability of the styrene block at both ends shows higher heat resistance.
更具體而言,彈性體為苯乙烯及共軛二烯的嵌段共聚物的氫化物更佳。對熱的安定性提升,不易引起分解或聚合等變質。此外,藉由將熱安定性高的苯乙烯嵌段於兩末端顯示更高的耐熱性。再者,由對碳化氫系溶劑的溶解性及對光阻劑溶劑的耐受性之觀點而言也是更佳。More specifically, the elastomer is more preferably a hydrogenated product of a block copolymer of styrene and a conjugated diene. The heat stability is improved, and it is not easy to cause deterioration such as decomposition or polymerization. In addition, the high heat stability of the styrene block at both ends shows higher heat resistance. Furthermore, it is more preferable from the viewpoint of solubility to hydrocarbon solvents and resistance to photoresist solvents.
可以用作構成接著層61的接著劑所含有的彈性體之市售品,例如,可舉出Kuraray(股)公司製造「SEPTON(商品名)」、Kuraray(股)公司製造「HYBRAR(商品名)」、旭化成(股)公司製造「Tuftec(商品名)」、JSR(股)公司製造「DYNARON(商品名)」等。It can be used as a commercially available product of the elastomer contained in the adhesive that constitutes the
構成接著層61的接著劑所含有的彈性體之含量,例如,以接著劑組成物全量為100重量部,在50重量部以上、99重量部以下的範圍內為佳,60重量部以上、99重量部以下的範圍內更佳,70重量部以上、95重量部以下的範圍內最佳。藉由在這些範圍內,可以維持耐熱性、同時使晶圓與支撐體適切地貼合。The content of the elastomer contained in the adhesive constituting the
此外,彈性體亦可混合複數種類。換言之,構成接著層61的接著劑係可以包含複數種類的彈性體。複數種類的彈性體之中至少一種,以含有苯乙烯單位作為主鏈的構成單位即可。此外,複數種類的彈性體之中至少一種,苯乙烯單位的含量在14重量%以上、50重量%以下的範圍內,或者,重量平均分子量在10,000以上、200,000以下的範圍內的話,在本發明之範疇。此外,於構成接著層61的接著劑,包含複數種類的彈性體之場合,混合的結果,也可以調整使苯乙烯單位的含量在前述的範圍內。例如,將苯乙烯單位的含量為30重量%之Kuraray(股)公司製造的SEPTON(商品名)的Septon4033,與苯乙烯單位的含量為13重量%之SEPTON(商品名)的Septon2063以重量比1對1予以混合的話,苯乙烯對接著劑所含的彈性體全體之含量為21~22重量%,從而成為14重量%以上。此外,例如,苯乙烯單位在將10重量%者與60重量%者以重量比1對1予以混合時成為35重量%,在前述的範圍內。本發明可以是這樣的型態。此外,構成接著層61的接著劑所包含的複數種類的彈性體,全部含有在前述的範圍內的苯乙烯單位、且重量平均分子量在前述的範圍內是最佳。In addition, multiple types of elastomers may be mixed. In other words, the adhesive system constituting the
又,使用光硬化樹脂(例如,UV硬化性樹脂)以外的樹脂來形成接著層61為佳。使用光硬化樹脂以外的樹脂,所以在接著層61的剝離或除去之後,可防止於被支撐基板的微小凹凸的周邊殘留殘渣。特別是,作為構成接著層61的接著劑,並非溶解於任何溶劑,溶解於特定的溶劑者為佳。這是因為,並不是對基板S施加物理的力,是可藉由使接著層61溶解於溶劑而除去的緣故。接著層61除去時,就連由強度降低的基板S,也不使基板S或破損、或變形,而可以容易地除去接著層61。In addition, it is preferable to form the
(稀釋溶劑)
於形成接著層61時使用的稀釋溶劑,例如可以使用十氫化萘(沸點185℃~195℃),醋酸丁酯(沸點126℃)。其他稀釋溶劑,例如可以舉出己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等直鏈狀碳化氫,碳數4到15的分歧狀碳化氫,例如,環己烷、環庚烷、環辛烷、萘、十氫化萘、四氫化萘等環狀碳化氫,對薄荷烷、鄰薄荷烷、間薄荷烷、二苯甲烷、1,4-萜二醇、1,8-萜二醇、莰烷、降冰片烷、蒎烷、側柏烷、蒈烷(carane)、長葉烯、香葉醇、橙花醇、芳樟醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-松油醇、β-松油醇、γ-松油醇、萜品烯-1-醇、萜品烯-4-醇、二氫乙酸萜品酯、1,4-桉樹酚、1,8-桉樹酚、龍腦(borneol)、香旱芹酮(carvone)、紫羅蘭酮(ionone)、側柏酮(thujone)、樟腦(camphor)、d-檸檬烯(limonene)、l-檸檬烯、雙戊烯(dipentene)等萜烯系溶劑;γ-內丁酯等內酯類;丙酮、甲乙酮、環己酮(CH)、甲基正戊酮、甲基異戊酮、2-庚酮等酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等多價醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等具有酯結合的化合物、前述多價醇類或具有前述酯結合的化合物之單甲基醚、單乙基醚、單丙基醚、單丁基醚等單烷基醚或者單苯基醚等具有醚結合之化合物的多價醇類衍生物(其中以丙二醇甲醚醋酸酯((PGMEA)、丙二醇甲醚(PGME)為較佳);二氧雜環己烷(dioxane)那樣的環式醚類,或乳酸甲酯、乳酸乙酯(EL)、醋酸甲酯、醋酸乙酯、醋酸丁酯、醋酸甲氧丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等酯類;大茴香醚(anisole)、乙基芐基醚、甲酚甲基醚、二苯醚、二苄醚、苯乙醚(phenetole)、丁基苯基醚等芳香族系有機溶劑等。(Diluent solvent)
As the dilution solvent used when forming the
(其他成分)
構成接著層61的接著劑,於不損害本質的特性之範圍,也可以進而包含具混合性的其他物質。例如,可以進而使用供改良接著劑性能用的附加的樹脂、可塑劑、接著輔助劑、安定劑、著色劑、熱聚合禁止劑及界面活性劑等、慣用的各種添加劑。(Other ingredients)
The adhesive that constitutes the
圖12係顯示步驟S02的動作之流程圖。如圖12所示,在步驟S02,首先,將已形成接著層61的基板S搬入加熱裝置100的第1室11內(步驟S21)。此場合,使加熱裝置100的擋門20先配置於開放位置P1,藉由未圖示的基板搬送機構將基板S由基板用開口部14a搬入第1室11內。基板搬送機構,係使基板S在比固定銷17c的上端還要上方的位置待機。Fig. 12 is a flowchart showing the operation of step S02. As shown in FIG. 12, in step S02, first, the substrate S on which the
在此狀態,藉由銷驅動部19c的驅動,使複數銷19a由加熱部17的上面17a突出去,使複數銷19a的上端移動至比固定銷17c的上端還要上方,而支撐基板S。利用複數銷19a支撐基板S後,基板搬送機構解除基板S的保持。藉由此動作,基板S由基板搬送機構被交付至複數銷19a上。其後,基板搬送機構,由基板用開口部14a退避至真空室10的外部。此外,銷驅動部19c係使複數銷19a下降,將基板S載置於固定銷17c的上端。In this state, the plurality of
其次,將被搬入第1室11的基板S、利用加熱部17予以加熱(步驟S22)。圖11(B)係顯示步驟S02的動作之一例之圖。在步驟S22,以例如不同的溫度複數次加熱基板S亦可。例如,於複數次加熱基板S的場合,越後的加熱,加熱基板S的溫度越高。更具體而言,於複數次加熱基板S的場合,最初的加熱,設定在接著劑所含有的溶媒(溶劑)之中的最低沸點的三分之一到二分之一的溫度。其次設定在與沸點同等的溫度及/或比沸點高的溫度。如圖11(B)所示,藉由以此方式加熱接著層61,接著層61所含有的溶媒氣化,接著層61乾燥。
又,此步驟S22中之「沸點的三分之一到二分之一的溫度」,係在溶媒之中的最低沸點以攝氏溫度標記為X[℃]時指「X/3[℃]到X/2[℃]的溫度」之區域,例如,沸點150℃的溶媒為沸點最低的溶媒之場合,指「50℃到75℃」的溫度區域。
此外,「與沸點同等的溫度」,典型上指X±15[℃]的溫度區域。
此外,X被採用的溫度係例如80℃~240℃,為100℃~220℃佳,為110℃~200℃更佳。Next, the substrate S carried into the
加熱接著層61時,在加熱裝置100,藉由使抽氣部30動作,由被設於第1室11的抽氣口16a將第1室11內的氣體抽氣(步驟S23)。藉由此動作,真空室10的外氣A由升降用開口部14b流入第2室12內。外氣A,經過間隙K(導入路)而被導入第1室11。被導入第1室11的外氣A,經過前述的路徑而流到抽氣口16a,由抽氣口16a往真空室10的外部被排出。When the
往真空室10的外部被排出的外氣A,係藉由蓋40的排出裝置50,往蓋40的外部被排出。藉由基板S的加熱而由接著層61氣化的溶媒,係沿著上部加熱部18的下面流向基板S的緣部側,混入外氣A氣流而由抽氣口16a往真空室10的外部被排出。又,加熱基板S時,加熱部17之外,也可以用上部加熱部18進行基板S的加熱。The external air A discharged to the outside of the
加熱處理結束之後,將基板S往真空室10的外部搬出。此場合,在第1室11,藉由利用銷驅動部19c使複數銷19a上升而從固定銷17c以銷19a的上端接受基板S,使基板S配置於交付至基板搬送機構的位置。其後,例如藉由擋門驅動部23,使擋門20移動至開放位置P1,使在真空室10的外部待機的基板搬送機構進入第1室11內,將被載置於銷19a上的基板S交付至基板搬送機構。其後,銷驅動部19c,係使複數銷19a收容於加熱部17的貫通孔17b內。此外,接受基板S的基板搬送機構,係在保持基板S的狀態下由基板用開口部14a往第1室11的外部移動。藉由此動作,加熱處理後的基板S,由真空室10被搬出,於第1室11內成為可以搬入新的基板S的狀態。After the heating process is completed, the substrate S is carried out of the
其次,於圖10所示流程圖,說明支撐體G側的步驟。圖13(A)係顯示步驟S03的動作之一例之圖。在步驟S03,藉由CVD等成膜法,於支撐體G形成分離層。其他,該步驟S03係如圖13(A)所示,例如將支撐體G保持於未圖示的載物台上,由噴嘴等吐出用以於支撐體G的形成面Ga形成分離層62之液狀體。此外,於此步驟S03,前述的噴嘴亦可使用狹縫噴嘴等。該場合,可以採用使載物台與狹縫噴嘴相對地移動,於支撐體G的形成面Ga上形成分離層62的態樣。又,支撐體G,例如,使用厚度為600~800μm的圓形狀或大致圓形狀之半導體晶圓。半導體晶圓的厚度是任意的。此外,支撐體G,也可以取代半導體晶圓,例如,使用厚度為500~1500μm的玻璃板等。支撐體G的形狀,係配合基板S的形狀而設定。Next, in the flowchart shown in FIG. 10, the procedure on the support G side will be described. FIG. 13(A) is a diagram showing an example of the operation of step S03. In step S03, a separation layer is formed on the support G by a film forming method such as CVD. In addition, this step S03 is shown in FIG. 13(A). For example, the support G is held on a stage (not shown) and ejected from a nozzle or the like to form the
以下,以圖13(A)為例詳細說明分離層。
分離層62,係由藉例如吸收光而變質的材料形成。分離層62變質,係意指分離層62受到稍微的外力就可被破壞的狀態,或者使分離層62與相接的層之接著力降低的狀態。分離層62,藉由吸收光而變質,相比於變質前,強度或對支撐體的接著性會降低。因此,變質後的分離層62,藉由施加稍微的外力等會被破壞,或自支撐體G剝離。Hereinafter, the separation layer will be described in detail by taking FIG. 13(A) as an example.
The
分離層62的變質,可以是由吸收的光的能量(發熱性或非發熱性的)造成的分解、架橋、立體配置的變化或者官能機的解離(接著,伴隨這些之分離層62的硬化、脫氣、收縮或膨脹)等。分離層62的變質,係因構成分離層62的材料吸收光的結果而產生。因此,分離層62變質的種類,可因應構成分離層62的材料的種類不同而變化。此外,分離層62,並不限定於藉吸收光而變質的材料。例如,也可以是藉由不依賴光而吸收被給予的熱而變質的材料,或者,利用其他溶劑等而變質的材料。The deterioration of the
分離層62的厚度,例如,為0.05~50μm較佳,0.3~1μm更佳。分離層62的厚度在0.05~50μm的範圍內的話,可以藉由短時間的光照射及低能量的光照射、或短時間的加熱、短時間的浸漬到溶劑等,使分離層62產生所要的變質。此外,分離層62的厚度,由生產性的觀點而言在1μm以下的範圍內特佳。The thickness of the
以下,說明藉由吸收的光的能量而變質的分離層62。分離層62,僅由具有吸收光的構造之材料而形成為佳,在不損害本質的特性的範圍內,也可以添加不具有吸收光的構造之材料,形成分離層62。此外,分離層62之對向於接著層61之側的面以平坦(並未形成凹凸)為佳,藉此,分離層62的形成容易進行,且於黏貼時也可以均勻地黏貼。Hereinafter, the
分離層62,也可以是藉由吸收由雷射照射的光而變質者。亦即,為了使分離層62變質而被照射到分離層62的光,可以是由雷射照射的光。作為發射往分離層62照射的光之雷射之例,可舉出YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、染料雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或者非雷射光等。發射往分離層62照射的光之雷射,可以因應構成分離層62的材料而適當選擇,選擇照射得以使構成分離層62的材料變質之波長的光之雷射即可。The
圖13(B)係顯示步驟S04的動作之一例之圖。圖13(B)係顯示使支撐體G反轉的動作之一例。如圖13(B)所示,在步驟S04,例如使支撐體G保持於未圖示的反轉裝置的保持部。其後,藉由使保持部於特定的軸周圍反轉,以被形成分離層62的形成面Ga成為下側的方式使支撐體G反轉。又,反轉裝置以能使支撐體G反轉即可,其構成是任意的。FIG. 13(B) is a diagram showing an example of the operation of step S04. FIG. 13(B) shows an example of the operation of reversing the support G. As shown in FIG. 13(B), in step S04, the support body G is hold|maintained by the holding part of the inversion apparatus which is not shown, for example. After that, by inverting the holding portion around a specific axis, the support G is inverted so that the formation surface Ga on which the
又,於圖10所示的流程圖,基板S側的步驟之步驟S01、S02,與支撐體G側的步驟之步驟S03、S04,可以是全部或一部分並行進行,也可以是步驟S01、S02、S03、S04按時間順序排列進行。Furthermore, in the flowchart shown in FIG. 10, steps S01 and S02 of the steps on the side of the substrate S, and steps S03 and S04 of the steps on the side of the support G may be performed in parallel or in whole or in part, or may be steps S01 and S02. , S03, S04 are arranged in chronological order.
圖14係顯示步驟S05的動作之一例之圖。圖14係顯示黏貼基板S與支撐體G的動作之一例。如圖14所示,步驟S05,係藉由未圖示的黏貼裝置黏貼基板S與支撐體G。黏貼裝置,可以被包含於步驟S04所用的反轉裝置,抑或與反轉裝置不同的裝置。黏貼裝置,藉由將基板S的接著層61與支撐體G的分離層62相互貼合,而將基板S與支撐體G黏貼。此場合,將接著層61向上的基板S、與在步驟S04使分離層62向下反轉的分離層62,兩者相對向並位置對準,藉由使基板S與支撐體G接近而進行兩者的貼合。又,黏貼裝置,可黏貼基板S與支撐體G即可,其構成是任意的。FIG. 14 is a diagram showing an example of the operation of step S05. FIG. 14 shows an example of the action of pasting the substrate S and the support G. As shown in FIG. 14, step S05 is to paste the substrate S and the support G by a pasting device not shown. The pasting device can be included in the reversing device used in step S04, or a device different from the reversing device. The sticking device sticks the substrate S and the support G by sticking the
圖15係顯示相關於本實施型態之基板處理系統之其他例之圖。圖15係顯示於基板處理系統200B配置各單元之一例。又,圖15係使用XYZ座標說明圖中的方向。於此XYZ座標,以鉛直方向為Z方向,以水平方向為X方向及Y方向。此外,針對X、Y、Z方向的各方向,箭頭所指的方向稱為+方向(例如,+X方向),其相反方向稱為-方向(例如,-X方向)。FIG. 15 is a diagram showing another example of the substrate processing system related to this embodiment. FIG. 15 shows an example of each unit arranged in the
圖15所示的基板處理系統200B係處理基板S。基板處理系統200B,係具備:用於基板S的搬入及搬出之基板搬入搬出部CS、搬送基板S之搬送部TR、供冷卻基板S用之冷卻部CA、於基板S塗布接著劑之塗布部SC、洗淨基板S之洗淨部CC、加熱基板S之加熱部BP、在減壓下加熱基板S之真空加熱部VB、進行基板S位置對準之預對準器PA、暫時收容基板S之載入載出室LL、黏貼基板S與支撐體G之黏貼部BO、與對系統全體供給電源之電源部EB。於基板處理系統200B,加熱部BP係包含前述之加熱裝置100。此外,塗布部SC係包含前述之塗布裝置110。此外,黏貼部BO係包含前述之黏貼裝置120。The
基板搬入搬出部CS係設置於基板處理系統200B的-Y側端部,於X方向配置複數處、例如4處。又,基板搬入搬出部CS數並不限定於4處,可以設置3處以下或5處以上。藉由交互地使用複數處(4處)基板搬入搬出部CS,可以提高基板S對基板處理系統200B的搬入或搬出效率。The substrate carry-in and carry-out section CS is provided at the end of the
搬送部TR係具有第1搬送部TR1及第2搬送部TR2。第1搬送部TR1,係於X方向在廣大的範圍內搬送基板S、支撐體G、或兩者的層積體等。第1搬送部TR1,例如,具有未圖示的搬送機器手臂。搬送機器手臂,可沿著X方向移動過第1搬送部TR1內。於第1搬送部TR1的-X側配置載入載出室LL(第1載入載出室LL1),於+X側配置電源部EB。於第1搬送部TR1的+Y側,配置預對準器PA、冷卻部CA、加熱部BP(第7加熱部BP7及第8加熱部BP8)、載入載出室LL(第2載入載出室LL2)。又,冷卻部CA,係於Z方向重疊配置被配置冷卻板的單元、與被配置冷卻區域的單元。第1搬送部TR1,係在這些基板搬入搬出部CS、載入載出室LL、預對準器PA、冷卻部CA、與加熱部BP之間搬送基板S等。The transport unit TR has a first transport unit TR1 and a second transport unit TR2. The first transport portion TR1 transports the substrate S, the support G, or a laminate of both, etc. in a wide range in the X direction. The first transport unit TR1 has, for example, a transport robot arm not shown. The transport robot can move through the first transport section TR1 in the X direction. The loading and unloading chamber LL (first loading and unloading chamber LL1) is arranged on the -X side of the first conveyance portion TR1, and the power supply unit EB is arranged on the +X side. On the +Y side of the first transfer part TR1, the pre-aligner PA, the cooling part CA, the heating part BP (the seventh heating part BP7 and the eighth heating part BP8), and the loading and unloading chamber LL (the second loading Load out room LL2). In addition, in the cooling part CA, the unit on which the cooling plate is arranged and the unit on which the cooling area is arranged are overlapped in the Z direction. The first transport unit TR1 transports the substrate S and the like between these substrate transport unit CS, load-out chamber LL, pre-aligner PA, cooling unit CA, and heating unit BP.
第2搬送部TR2,係配置於冷卻部CA的+Y側,於Y方向在廣大的範圍內搬送基板S、支撐體G等。第2搬送部TR2,具有未圖示的搬送機器手臂。搬送機器手臂,可沿著Y方向移動於第2搬送部TR2內。於第2搬送部TR2的-X側,配置維修部MN、塗布部SC、洗淨部CC。於第2搬送部TR2的+X側,配置維修部MN、加熱部BP(第1加熱部BP1~第4加熱部BP4、第5加熱部BP5~第6加熱部BP6)、真空加熱部VB。又,第1加熱部BP1~第4加熱部BP4係於Z方向重疊配置。此外,第5加熱部BP5~第6加熱部BP6、與真空加熱部VB,係於Z方向重疊配置。第2搬送部TR2,係在這些塗布部SC、洗淨部CC、加熱部BP(第1加熱部BP1~第6加熱部BP6)、真空加熱部VB之間搬送基板S等。The second conveyance part TR2 is arranged on the +Y side of the cooling part CA, and conveys the substrate S, the support G, etc. in a wide range in the Y direction. The second transfer part TR2 has a transfer robot arm not shown. The transport robot arm can move in the second transport part TR2 along the Y direction. On the -X side of the second conveyance part TR2, a maintenance part MN, a coating part SC, and a cleaning part CC are arranged. On the +X side of the second conveyance part TR2, a maintenance part MN, a heating part BP (the first heating part BP1 to the fourth heating part BP4, the fifth heating part BP5 to the sixth heating part BP6), and the vacuum heating part VB are arranged. Moreover, the 1st heating part BP1-the 4th heating part BP4 are overlapped and arrange|positioned in the Z direction. In addition, the fifth heating part BP5 to the sixth heating part BP6 and the vacuum heating part VB are arranged to overlap in the Z direction. The second conveying part TR2 conveys the substrate S and the like between the coating part SC, the cleaning part CC, the heating part BP (the first heating part BP1 to the sixth heating part BP6), and the vacuum heating part VB.
由基板搬入搬出部CS被搬入的基板S、支撐體G,係依照相關於本實施型態的基板處理方法,藉由第1搬送部TR1或第2搬送部TR2而在搬送的各搬送目的地被處理,形成基板S與支撐體G被黏貼的層積體並藉由第1搬送部TR1被搬入基板搬入搬出部CS。以此方式,基板處理系統200B,係以抑制系統的大型化,同時能有效率地實施相關於本實施型態之基板處理方法的方式配置各裝置。The substrate S and the support G that are carried in by the substrate carry-in and carry-out section CS are transported to each transport destination by the first transport section TR1 or the second transport section TR2 in accordance with the substrate processing method related to this embodiment. After being processed, a laminate in which the substrate S and the support G are adhered is formed, and is carried into the substrate carry-in and carry-out part CS by the first transport part TR1. In this way, in the
如以上所述,根據相關於本實施型態的加熱裝置100、基板處理方法、基板處理系統200、200A、200B的話,加熱被塗布於基板S的接著劑時,可以抑制氣體的流動於一方向上橫切基板S上,所以可以抑制被形成於基板S上的接著層的膜厚產生離散。結果,可以高精度地貼附基板S與支撐體G。As described above, according to the
此外,本發明並不以上述說明為限定,在不逸脫本發明的要旨的範圍可以進行種種變更。In addition, the present invention is not limited to the above description, and various changes can be made within a range that does not deviate from the gist of the present invention.
A:外氣
G:支撐體
K:間隙
P1:開放位置
P2:閉塞位置
S:基板
17:加熱部
200,200A,200B:基板處理系統
10:真空室
11:第1室
12:第2室
13:隔開部
14:側壁
14a:基板用開口部
14b:升降用開口部
16:室頂部
16a:抽氣口
17b,21d:貫通孔
17c:固定銷
18:上部加熱部
19:基板升降部
19a:銷
19c:銷驅動部
20:擋門
23:擋門驅動部
23a:升降驅動部
23b:水平驅動部
30:抽氣部
31:上側加熱部
40:蓋
50:排出裝置
100:加熱裝置
110:塗布裝置
120:黏貼裝置A: Outside air
G: Support
K: gap
P1: Open position
P2: Blocked position
S: substrate
17:
[圖1]係顯示相關於本實施型態之加熱裝置之一例之剖面圖。 [圖2]係顯示第1室的內部之一例之平面圖。 [圖3]係顯示開放開口部的狀態之圖。 [圖4]係顯示閉塞開口部的狀態之圖。 [圖5]係擴大顯示真空室的一部分(後側)之圖。 [圖6]係擴大顯示真空室的一部分(前側)之圖。 [圖7](A)係顯示把被塗布接著劑的基板用相關於本實施型態的加熱裝置加熱的場合之接著劑的膜厚之一例之圖,(B)係顯示使用相關於比較例的加熱裝置加熱基板的場合之接著劑的膜厚之一例之圖。 [圖8]係顯示相關於本實施型態之基板處理系統之一例之圖。 [圖9]係顯示相關於本實施型態之基板處理系統之其他例之圖。 [圖10]係顯示相關於本實施型態之基板處理方法之一例之流程圖。 [圖11](A)係顯示於基板塗布接著層的動作之圖,(B)係顯示被塗布接著劑的基板之一例之圖。 [圖12]係顯示於相關於本實施型態之基板處理方法加熱基板的動作之一例之流程圖。 [圖13](A)係顯示於支撐體形成分離層的狀態之一例之圖,(B)係顯示使支撐體反轉的動作之一例之圖。 [圖14]係顯示黏貼基板與支撐體的動作之一例之圖。 [圖15]係顯示相關於本實施型態之基板處理系統之其他例之圖。[Figure 1] is a cross-sectional view showing an example of a heating device related to this embodiment. [Figure 2] is a plan view showing an example of the interior of the first room. [Fig. 3] A diagram showing a state in which the opening is opened. [Fig. 4] A diagram showing a state in which the opening is closed. [Figure 5] An enlarged view of a part (rear side) of the vacuum chamber. [Figure 6] An enlarged view of a part (front side) of the vacuum chamber. [Fig. 7] (A) is a diagram showing an example of the film thickness of the adhesive when the substrate to which the adhesive is applied is heated by the heating device related to this embodiment, and (B) is a diagram showing the use related to the comparative example A diagram showing an example of the film thickness of the adhesive when the heating device heats the substrate. [FIG. 8] A diagram showing an example of a substrate processing system related to this embodiment. [FIG. 9] A diagram showing another example of the substrate processing system related to this embodiment. [Fig. 10] is a flowchart showing an example of a substrate processing method related to this embodiment. [FIG. 11] (A) is a diagram showing the operation of applying an adhesive layer on a substrate, and (B) is a diagram showing an example of a substrate to which an adhesive is applied. [Fig. 12] is a flowchart showing an example of the operation of heating the substrate in the substrate processing method related to this embodiment. [FIG. 13] (A) is a diagram showing an example of a state where a separation layer is formed on a support, and (B) is a diagram showing an example of an operation of inverting the support. [Fig. 14] A diagram showing an example of the action of pasting the substrate and the support. [FIG. 15] A diagram showing another example of the substrate processing system related to this embodiment.
D:間隙 D: gap
K:間隙 K: gap
S:基板 S: substrate
17:加熱部 17: Heating section
10:真空室 10: Vacuum chamber
11:第1室 11: Room 1
12:第2室 12: Room 2
13:隔開部 13: Partition
13a:屈曲部 13a: flexion
14:側壁 14: side wall
14a:基板用開口部 14a: Opening for substrate
14b:升降用開口部 14b: Opening for lifting
15:底部 15: bottom
16:室頂部 16: top of room
16a:抽氣口 16a: Exhaust port
17a:上面 17a: Above
17b,21d:貫通孔 17b, 21d: Through hole
17c:固定銷 17c: fixed pin
18:上部加熱部 18: Upper heating part
19:基板升降部 19: Substrate lifter
19a:銷 19a: pin
19b:銷支撐部 19b: Pin support
19c:銷驅動部 19c: Pin drive
20:擋門 20: Block the door
21:框架 21: Frame
21a:框架底部 21a: bottom of the frame
21b:框架側部 21b: frame side
21c:凸緣部 21c: Flange
22:土台部 22: soil platform
23:擋門驅動部 23: Gate drive
30:抽氣部 30: Exhaust part
40:蓋 40: cover
50:排出裝置 50: Discharge device
100:加熱裝置 100: heating device
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