TWI752230B - Manufacturing method of laminated body, manufacturing method of electronic device, laminated body, and laminated body manufacturing system - Google Patents
Manufacturing method of laminated body, manufacturing method of electronic device, laminated body, and laminated body manufacturing system Download PDFInfo
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Abstract
本發明之課題為,對分離層容易被剝離一事作抑制,而可順利地進行後續之處理,並容易地製造層積體或電子裝置。 本發明之解決手段為,一種層積體之製造方法,其係製造將矩形狀的玻璃支撐體(10)與藉由光的吸收或加熱而變質的分離層(20)層積而成的層積體(50)之方法,並包含有:分離層形成工程S01,係將分離層(20),以使端部(20a)從玻璃支撐體(10)的端部(10e)分離的方式形成於玻璃支撐體(10)上的中央部分。An object of the present invention is to suppress the separation layer from being easily peeled off, so that subsequent processing can be smoothly performed, and a laminate or an electronic device can be easily produced. The solution of the present invention is a method for producing a laminate, which produces a layer obtained by laminating a rectangular glass support (10) and a separation layer (20) degraded by light absorption or heating The method of integrating the body (50), further comprising: a separation layer forming process S01, in which the separation layer (20) is formed in such a way that the end portion (20a) is separated from the end portion (10e) of the glass support body (10). on the central part of the glass support (10).
Description
本發明係關於層積體之製造方法、電子裝置之製造方法、層積體、以及層積體製造系統。 The present invention relates to a method for manufacturing a laminate, a method for manufacturing an electronic device, a laminate, and a system for manufacturing the laminate.
近年來,作為製造電子裝置的方法之一例,已知有被稱為所謂的扇出型PLP(Fan-out Panel Level Package)技術的手法。於扇出型PLP技術中,例如,係於板狀的支撐體上形成藉由光的吸收或加熱而變質的分離層,並於其上層積具有電子零件的基板。其後,對分離層施加光或熱而使基板從支撐體分離,並將基板切斷成各個電子零件而得到電子裝置。作為支撐體,係亦提案有使用矩形狀的玻璃支撐體,於使用有此種玻璃支撐體的扇出型PLP技術中,係藉由將用以形成分離層的液狀體從狹縫噴嘴等塗佈於玻璃支撐體並使其乾燥,而於玻璃支撐體上形成有分離層(例如,參照專利文獻1及專利文獻2)。
In recent years, as an example of a method of manufacturing an electronic device, a method called a so-called fan-out PLP (Fan-out Panel Level Package) technique has been known. In the fan-out PLP technology, for example, a separation layer degenerated by light absorption or heating is formed on a plate-shaped support, and a substrate having electronic components is laminated thereon. Then, light or heat is applied to the separation layer to separate the substrate from the support, and the substrate is cut into individual electronic components to obtain an electronic device. As a support, it is also proposed to use a rectangular glass support, and in the fan-out PLP technology using such a glass support, the liquid for forming the separation layer is passed through a slit nozzle or the like. It is apply|coated to a glass support body, it is made to dry, and a separation layer is formed on a glass support body (for example, refer
[專利文獻1] 日本特開平9-29167號公報 [Patent Document 1] Japanese Patent Application Laid-Open No. 9-29167
[專利文獻2] 日本特開2002-186893號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2002-186893
於扇出型PLP技術中,係為了提昇良率,而進行將包含電子零件的基板廣範圍地形成於玻璃支撐體上。於此情況中,由於是使基板從玻璃支撐體剝離,因此,可推測,分離層係被形成至玻璃支撐體的端部為止。但,若是分離層被形成至玻璃支撐體的端部為止,則分離層與玻璃支撐體的密著性於玻璃支撐體的端部處係變低,而分離層會變得容易剝離,而存在有對分離層形成後的處理產生阻礙的問題。尤其是在塗佈液狀體來形成分離層的情況時,於端部處分離層會變厚而剛性變高,並且伴隨著液狀體的乾燥,分離層係被往中央側拉伸,而存在有變得容易從端部剝離的問題。又,在從狹縫噴嘴等於玻璃支撐體上塗佈液狀體來形成分離層的情況時,即便是使液狀體之塗佈在玻璃支撐體的端部前方停止,液狀體也會在玻璃支撐體上擴展,而成為在到達端部的狀態下形成分離層,而與上述同樣地,分離層變得容易被剝離。 In the fan-out PLP technology, in order to improve the yield, substrates including electronic components are widely formed on a glass support. In this case, since the board|substrate was peeled from the glass support body, it is presumed that the separation layer was formed up to the edge part of the glass support body. However, when the separation layer is formed up to the end of the glass support, the adhesion between the separation layer and the glass support becomes low at the end of the glass support, and the separation layer is easily peeled off. There is a problem that the processing after the formation of the separation layer is hindered. In particular, when a liquid material is applied to form a separation layer, the separation layer becomes thick and rigid at the ends, and the separation layer is stretched toward the center as the liquid material dries. There is a problem that it becomes easy to peel off from the end. In addition, when the separation layer is formed by applying the liquid material on the glass support from the slit nozzle or the like, even if the application of the liquid material is stopped in front of the end of the glass support, the liquid material will remain in the glass support. The glass support spreads upward to form a separation layer in a state of reaching the end, and the separation layer is easily peeled off in the same manner as described above.
鑑於以上所述的情事,本發明係以提供使玻璃支撐體與分離層之密著性提昇並對分離層容易被剝離一事作抑制而可順利地進行後續之處理的層積體之製造方法、電子裝置之製造方法、層積體、以及層積體製造系統 作為目的。 In view of the above-mentioned circumstances, the present invention is to provide a method for producing a laminate that can improve the adhesion between the glass support and the separation layer, suppress the separation layer from being easily peeled off, and enable smooth subsequent processing, Manufacturing method of electronic device, laminate, and laminate manufacturing system as purpose.
於本發明之態樣中,係提供一種層積體之製造方法,其係製造將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質為能夠受到外力而被破壞之狀態或者是使與其他所相接之層之間之接著力作了降低之狀態的分離層層積而成的層積體之方法,其特徵為,係包含有:分離層形成工程,係將分離層以使端部從玻璃支撐體的端部分離的方式來形成於玻璃支撐體上的中央部分;和接著層形成工程,係於分離層形成工程之後,於分離層之玻璃支撐體不存在之側,以與分離層彼此相接合的方式來形成接著層,接著層,係在端部從分離層的端部分離的狀態下被形成於分離層上。 In an aspect of the present invention, there is provided a method for producing a laminate, which produces a rectangular glass support and is transformed into a state that can be destroyed by an external force by absorbing or heating light, or A method of laminating a separated layer in a state in which the adhesive force between the layers connected to other layers is reduced, comprising: a separation layer forming process of separating the layers so that the end The central part formed on the glass support in such a way that the part is separated from the end part of the glass support; and the subsequent layer forming process, after the separation layer forming process, is on the side where the glass support of the separation layer does not exist, so as to be consistent with the separation layer forming process. The adhesive layer is formed so that the separation layers are joined to each other, and the adhesive layer is formed on the separation layer in a state where the end portion is separated from the end portion of the separation layer.
於本發明之態樣中,係提供一種層積體之製造方法,其係製造將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質為能夠受到外力而被破壞之狀態或者是使與其他所相接之層之間之接著力作了降低之狀態的分離層層積而成的層積體之方法,其特徵為,係包含有:分離層形成工程,係將分離層以使端部從玻璃支撐體的端部分離的方式來形成於玻璃支撐體上的中央部分;和基板形成工程,係於分離層形成工程之後,於分離層之玻璃支撐體不存在之側形成具有電子零件的基板,基板,係在端部從分離層的端部分離的狀態下被形成於分離層上。 In an aspect of the present invention, there is provided a method for producing a laminate, which produces a rectangular glass support and is transformed into a state that can be destroyed by an external force by absorbing or heating light, or A method of laminating a separated layer in a state in which the adhesive force between the layers connected to other layers is reduced, comprising: a separation layer forming process of separating the layers so that the end The center part on the glass support body is formed in such a way that the part is separated from the end part of the glass support body; and the substrate forming process is performed after the separation layer forming process, and the electronic parts are formed on the side where the glass support body of the separation layer does not exist. The substrate, the substrate, is formed on the separation layer in a state where the end portion is separated from the end portion of the separation layer.
於本發明之態樣中,係提供一種層積體,其係將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質為能夠受到外力而被破壞之狀態或者是使與其他所相接之層之間之接著力作了降低之狀態的分離層層積而成,其特徵為:於玻璃支撐體上的中央部分具備有分離層,分離層,係端部從玻璃支撐體的端部分離,於分離層之玻璃支撐體不存在之側,以與分離層彼此相接合的方式來形成接著層,接著層,係以在端部從分離層的端部分離的狀態下而形成於分離層上。 In an aspect of the present invention, there is provided a laminate in which a rectangular glass support and a glass support are transformed into a state capable of being destroyed by external force by absorbing or heating light, or in a state that is compatible with other components. It is formed by stacking the separation layers in a state where the bonding force between the connected layers is reduced, and it is characterized in that: the central part on the glass support body is provided with a separation layer, the separation layer, and the end part is from the end part of the glass support body. Separation, on the side where the glass support of the separation layer does not exist, the adhesive layer is formed so as to be bonded to the separation layer, and the adhesive layer is formed in the separation layer in a state where the end portion is separated from the end portion of the separation layer. layer.
於本發明之態樣中,係提供一種層積體,其係將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質為能夠受到外力而被破壞之狀態或者是使與其他所相接之層之間之接著力作了降低之狀態的分離層層積而成,其特徵為:於玻璃支撐體上的中央部分具備有分離層,分離層,係端部從玻璃支撐體的端部分離,於分離層之玻璃支撐體不存在之側形成具有電子零件的基板,基板,係在端部從分離層的端部分離的狀態下被形成於分離層上。 In an aspect of the present invention, there is provided a laminate in which a rectangular glass support and a glass support are transformed into a state capable of being destroyed by external force by absorbing or heating light, or in a state that is compatible with other components. It is formed by stacking the separation layers in a state where the bonding force between the connected layers is reduced, and it is characterized in that: the central part on the glass support body is provided with a separation layer, the separation layer, and the end part is from the end part of the glass support body. In separation, a substrate having electronic components is formed on the side where the glass support of the separation layer does not exist, and the substrate is formed on the separation layer in a state where the end portion is separated from the end portion of the separation layer.
於本發明之態樣中,係提供一種層積體製造系統,其係製造將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質為能夠受到外力而被破壞之狀態或者是使與其他所相接之層之間之接著力作了降低之狀態的分離層層積而成的層積體之系統,其特徵為,係包含有:分離層形成裝置,係將分離層在端部從玻璃支撐體的端部分離的狀態下形成於玻璃支撐體上的中央部分;和接著層形成裝置,係於分離 層被形成之後,於分離層之玻璃支撐體不存在之側,以與分離層彼此相接合的方式來形成接著層,接著層形成裝置,係將接著層以在端部從分離層的端部分離的狀態下而形成於分離層上。 In an aspect of the present invention, there is provided a laminated body manufacturing system that manufactures a rectangular glass support and is transformed into a state that can be destroyed by external force by absorbing or heating light, or A system of laminates formed by laminating separation layers in a state in which the bonding force between the other adjoining layers is reduced, characterized by comprising: separation layer forming means for forming the separation layer at the end from the separation layer. a center portion formed on a glass support in a state where the ends of the glass support are separated; and an adhesive layer forming device tied to the separation After the layer is formed, on the side where the glass support of the separation layer does not exist, an adhesive layer is formed in such a way that the separation layer is bonded to each other, and the adhesive layer forming apparatus is used to attach the adhesive layer at the end from the end of the separation layer. It is formed on the separation layer in a separated state.
於本發明之態樣中,係提供一種層積體製造系統,其係製造將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質為能夠受到外力而被破壞之狀態或者是使與其他所相接之層之間之接著力作了降低之狀態的分離層層積而成的層積體之系統,其特徵為,係包含有:分離層形成裝置,係將分離層在端部從玻璃支撐體的端部分離的狀態下形成於玻璃支撐體上的中央部分;和基板形成裝置,係於分離層被形成之後,於分離層之玻璃支撐體不存在之側形成具有電子零件的基板,基板形成裝置,係將基板,以在端部從分離層的端部分離的狀態下而形成於分離層上。 In an aspect of the present invention, there is provided a laminated body manufacturing system that manufactures a rectangular glass support and is transformed into a state capable of being destroyed by external force by absorbing or heating light, or A system of laminates formed by laminating separation layers in a state in which the bonding force between the other adjoining layers is reduced, characterized by comprising: separation layer forming means for forming the separation layer at the end from the separation layer. a center portion formed on the glass support with the ends of the glass support separated; and a substrate forming apparatus for forming a substrate with electronic parts on the side where the glass support of the separation layer does not exist after the separation layer is formed The substrate forming apparatus forms the substrate on the separation layer in a state where the end portion is separated from the end portion of the separation layer.
於本發明之第1樣態中,係提供一種層積體之製造方法,其係製造將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質的分離層層積而成的層積體之方法,並包含有:分離層形成工程,係將前述分離層,以使端部從前述玻璃支撐體的端部分離的方式形成於前述玻璃支撐體上的中央部分。 In a first aspect of the present invention, there is provided a method for producing a laminate in which a rectangular glass support and a separation layer degraded by light absorption or heating are laminated. The method of forming a body, further comprising: a separation layer forming process of forming the separation layer on the central portion of the glass support so that the end portion thereof is separated from the end portion of the glass support.
於本發明之第2樣態中,係提供一種電子裝置之製造方法,其係包含有:藉由如上述之層積體之製造方法而製造層積體的步驟、以及使前述分離層變質,而將前述玻璃支撐體從前述層積體分離的步驟。 In a second aspect of the present invention, there is provided a method of manufacturing an electronic device, which includes the steps of manufacturing a laminate by the method of manufacturing a laminate as described above, and deteriorating the separation layer, And the step of separating the said glass support body from the said laminated body.
於本發明之第3樣態中,係提供一種層積體,其係將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質的分離層層積而成,於前述玻璃支撐體上的中央部分具備有前述分離層,且該分離層,係端部從前述玻璃支撐體的端部分離。 In a third aspect of the present invention, there is provided a laminate comprising a rectangular glass support and a separation layer degraded by light absorption or heating, on the glass support. The center part of the said separation layer is provided with the said separation layer, and the edge part of this separation layer is separated from the edge part of the said glass support body.
於本發明之第4樣態中,係提供一種層積體製造系統,其係製造將矩形狀的玻璃支撐體與藉由光的吸收或加熱而變質的分離層層積而成的層積體之系統,並包含有:分離層形成裝置,係將前述分離層,在端部從前述玻璃支撐體的端部分離的狀態下形成於前述玻璃支撐體上的中央部分。 In a fourth aspect of the present invention, there is provided a laminate production system that produces a laminate formed by laminating a rectangular glass support and a separation layer degraded by light absorption or heating The system includes: a separation layer forming device for forming the separation layer on the central part of the glass support body in a state where the end part is separated from the end part of the glass support body.
若依據本發明,則由於分離層的端部係在從玻璃支撐體的端部分離的狀態下被形成於玻璃支撐體的中央部分,因此藉由使玻璃支撐體與分離層之密著性提昇而對分離層容易被剝離一事作抑制,而可順利地進行後續之處理,並可容易地製造層積體或電子裝置。 According to the present invention, since the end portion of the separation layer is formed in the center portion of the glass support body in a state of being separated from the end portion of the glass support body, the adhesion between the glass support body and the separation layer is improved by improving Further, it is possible to suppress the separation layer from being easily peeled off, so that subsequent processing can be smoothly performed, and a laminate or an electronic device can be easily produced.
L:光 L: light
L1、L2、L3、L4、LX1、LX2、LX3、LX4:距離 L1, L2, L3, L4, LX1, LX2, LX3, LX4: Distance
M:遮蔽 M: mask
M1、M2、M3、M4、MX1、MX2、MX3、MX4:距離 M1, M2, M3, M4, MX1, MX2, MX3, MX4: Distance
Q1、Q2:液狀體 Q1, Q2: liquid
S:溶劑 S: solvent
10:玻璃支撐體 10: Glass support
10a、10b、10c、10d、20a、20b、20c、20d、30a、30b、30c、30d:端邊 10a, 10b, 10c, 10d, 20a, 20b, 20c, 20d, 30a, 30b, 30c, 30d: edge
10e、20e、30e、40e:端部 10e, 20e, 30e, 40e: end
10f:分離層形成面 10f: Separation layer forming surface
10g:周緣部 10g: peripheral part
10r:底面 10r: Bottom surface
20:分離層 20: Separate layers
20f:接著層形成面 20f: Next layer forming surface
30:接著層 30: Next layer
30f:基板形成面 30f: Substrate forming surface
40:基板 40: Substrate
41:電子零件 41: Electronic Parts
42:封模 42: Mold sealing
42a:上面 42a: Above
50:層積體 50: Laminate
51:電子裝置 51: Electronic Devices
60、61、62:狹縫噴嘴 60, 61, 62: Slit nozzle
61a、62a:開口部 61a, 62a: Opening part
70:載台 70: stage
80:噴嘴控制部 80: Nozzle control section
90:分離層形成裝置 90: Separation layer forming device
91:接著層形成裝置 91: Subsequent layer forming device
92:基板形成裝置 92: Substrate forming device
93:封模研磨裝置 93: Sealing mold grinding device
94:分離層變質裝置 94: Separation layer metamorphism device
95:玻璃支撐體剝離裝置 95: Glass support peeling device
96:接著層去除裝置 96: Subsequent layer removal device
100:層積體製造系統 100: Laminated Manufacturing Systems
[第1圖]係對實施形態之電子裝置之製造方法的一例作展示的流程圖。 [FIG. 1] It is a flowchart which shows an example of the manufacturing method of the electronic device of embodiment.
[第2圖](A)及(B)係對電子裝置之製造方法的一工程作展示的圖。 [FIG. 2] (A) and (B) are diagrams showing a process of a manufacturing method of an electronic device.
[第3圖](A)至(C)係接續第2圖,對電子裝置之製造方法的一工程作展示的圖。 [FIG. 3] (A) to (C) are diagrams showing a process of a manufacturing method of an electronic device following FIG. 2. FIG.
[第4圖](A)及(B)係接續第3圖,對電子裝置之製造方法的一工程作展示的圖。 [FIG. 4] (A) and (B) are diagrams showing a process of a manufacturing method of an electronic device following FIG. 3. FIG.
[第5圖](A)及(B)係接續第4圖,對電子裝置之製造方法的一工程作展示的圖。 [FIG. 5] (A) and (B) are diagrams showing a process of a manufacturing method of an electronic device following FIG. 4. FIG.
[第6圖]係對實施形態之分離層形成裝置的一例作展示的立體圖。 [FIG. 6] It is a perspective view which shows an example of the separation layer formation apparatus of embodiment.
[第7圖](A)及(B)係對分離層形成工程的一例作展示的圖。 [Fig. 7] (A) and (B) are diagrams showing an example of the separation layer formation process.
[第8圖](A)及(B)係接續第7圖,對分離層形成工程的一例作展示的圖。 [FIG. 8] (A) and (B) are diagrams showing an example of a separation layer formation process following FIG. 7. FIG.
[第9圖]係對分離層形成工程的一例作展示的圖。 [Fig. 9] is a diagram showing an example of the separation layer formation process.
[第10圖]係對接著層形成工程的一例作展示的圖。 [FIG. 10] It is a figure which shows an example of an adhesive layer formation process.
[第11圖]係對接著層形成工程的一例作展示的圖。 [FIG. 11] It is a figure which shows an example of an adhesive layer formation process.
[第12圖](A)及(B)係對層積體之製造方法的另一例作展示的圖。 [FIG. 12] (A) and (B) are diagrams showing another example of the method for producing the laminate.
[第13圖](A)及(B)係對層積體之製造方法的另一例作展示的圖。 [FIG. 13] (A) and (B) are figures which show another example of the manufacturing method of a laminated body.
[第14圖](A)至(C)係對層積體之製造方法的另一例作展示的工程圖。 [FIG. 14] (A) to (C) are engineering drawings showing another example of the manufacturing method of the laminated body.
[第15圖]係對實施形態之層積體製造系統的一例作示 意性展示的方塊圖。 [FIG. 15] An example of the laminated body manufacturing system of the embodiment is shown A block diagram of an intentional display.
[第16圖](A)至(C)係對實施例之剝離測試的結果作展示的表。 [FIG. 16] (A) to (C) are tables showing the results of the peel test of Examples.
以下,參照附圖,說明本發明之實施形態。以下,於附圖中,係為了使各構造變得容易了解,而對一部分作強調或者將一部分簡化來表示,而有與實際的構造或形狀、比例尺等不同的情況。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Hereinafter, in the drawings, in order to make each structure easier to understand, a part is emphasized or a part is simplified and shown, and it may differ from an actual structure, a shape, a scale, etc. in some cases.
第1圖係對實施形態之電子裝置之製造方法的一例作展示的流程圖。於本實施形態中,係藉由所謂的扇出型PLP技術而製造電子裝置。實施形態之電子裝置之製造方法,係如第1圖所示般,包含有:分離層形成工程(步驟S01)、接著層形成工程(步驟S02)、基板形成工程(步驟S03)、封模研磨工程(步驟S04)、分離層變質工程(步驟S05)、玻璃支撐體剝離工程(步驟S06)、以及接著層去除工程(步驟S07)。 FIG. 1 is a flowchart showing an example of the manufacturing method of the electronic device of the embodiment. In the present embodiment, the electronic device is manufactured by the so-called fan-out PLP technology. As shown in FIG. 1, the manufacturing method of the electronic device according to the embodiment includes: separation layer formation process (step S01), adhesive layer formation process (step S02), substrate formation process (step S03), and mold polishing Process (step S04), separation layer modification process (step S05), glass support peeling process (step S06), and adhesive layer removal process (step S07).
第2圖至第5圖,係為針對實施形態之電子裝置之製造方法而對工程之一例作展示的圖。以下,於第2圖至第5圖中,係使用XYZ座標系統來說明圖中的方向。於此XYZ座標系統中,係將與玻璃支撐體中形成分離層的分離層形成面平行的面設為XY平面。將與此XY平面平行的一個方向(例如,玻璃支撐體的短邊方向)表記為X方 向,將與X方向相正交的方向(例如,玻璃支撐體的長邊方向)表記為Y方向。又,與XY平面垂直的方向係表記為Z方向。亦即,分離層形成面的法線方向係成為Z方向。X方向、Y方向及Z方向之各者,係以圖中之箭頭的方向為+方向,且與箭頭的方向相反的方向為-方向的方式進行說明。 FIG. 2 to FIG. 5 are diagrams showing an example of the process for the manufacturing method of the electronic device according to the embodiment. Hereinafter, in FIGS. 2 to 5, the directions in the drawings are described using the XYZ coordinate system. In this XYZ coordinate system, the surface parallel to the separation layer formation surface in which the separation layer is formed in the glass support is set as the XY plane. One direction parallel to this XY plane (for example, the short side direction of the glass support) is represented as the X square In the direction, the direction orthogonal to the X direction (for example, the longitudinal direction of the glass support) is expressed as the Y direction. In addition, a direction perpendicular to the XY plane is expressed as the Z direction. That is, the normal line direction of the separation layer forming surface is the Z direction. Each of the X direction, the Y direction, and the Z direction will be described so that the direction of the arrow in the figure is the + direction, and the direction opposite to the direction of the arrow is the - direction.
於分離層形成工程S01中,例如,係如第2圖(A)及(B)所示般,於矩形狀的玻璃支撐體10的分離層形成面10f形成分離層20。分離層形成面10f係為平面狀。又,於分離層形成工程S01中,係以使分離層20的端部20e從玻璃支撐體10的端部10e分離的方式,來將分離層20形成於玻璃支撐體10之分離層形成面10f的中央部分,藉此而形成層積體50。另外,玻璃支撐體10,例如,係使用厚度500~1500μm的玻璃板等,藉由被載置於載台部70(參照第6圖)等並被吸附等,而在將分離層形成面10f設為特定的平面度的狀態下作保持。
In the separation layer formation process S01 , for example, as shown in FIGS. 2(A) and (B), the
於第2圖(A)及(B)所示之例中,分離層20係被形成為矩形狀。另外,分離層20,係不限定於矩形狀,亦可為其他形狀。例如,分離層20,亦可被形成為圓形狀、橢圓形狀、長圓形狀、或矩形以外的多角形狀。在分離層20被形成為矩形狀的情況時,分離層20,係作為端部20e而具有4個端邊20a、20b、20c、20d。端邊20a~20d,
係分別與身為玻璃支撐體10的端部10e的端邊10a、10b、10c、10d平行地配置。
In the example shown in FIGS. 2(A) and (B), the
分離層20的端邊20a,係與玻璃支撐體10的端邊10a之間隔著距離L1地配置。分離層20的端邊20b,係與玻璃支撐體10的端邊10b之間隔著距離L2地配置。又,分離層20的端邊20c,係與玻璃支撐體10的端邊10c之間隔著距離M1地配置。分離層20的端邊20d,係與玻璃支撐體10的端邊10d之間隔著距離M2地配置。上述之距離L1、L2、M1、M2,係可分別為相同之值,亦可為彼此相異之值。
The
另外,上述之距離L1、L2、M1、M2,例如,係可在0.1mm~10mm之範圍內作設定,但並不限定於此範圍。藉由將距離L1、L2、M1、M2之值設為0.1mm以上,而更加地發揮將分離層20的端部20e從玻璃支撐體10的端部10e分離的效果。另外,藉由將上述值設為10mm以下,而可確保適合的分離層20之面積,而可構築良率佳的製程。另外,分離層20的膜厚,雖以遍及前面而成為均勻或大致均勻的方式來形成,但亦可一部分的膜厚為不同。例如,可使分離層20的端部20e變得比其他部分膜厚更薄,又,亦可使其端部20e變得比其他部分膜厚更厚。
In addition, the above-mentioned distances L1, L2, M1, and M2, for example, can be set within the range of 0.1 mm to 10 mm, but are not limited to this range. By setting the value of the distances L1 , L2 , M1 , and M2 to be 0.1 mm or more, the effect of separating the
第6圖,係對實施形態之分離層形成裝置90的一例作展示的立體圖。如第6圖所示般,分離層形成裝置90,係
具備有噴嘴部60、和載台部70、以及控制部80。噴嘴部60,係藉由未圖示的支架等而被保持,並可相對於載台部70而進行移動。噴嘴部60,係可將用以形成分離層20的液狀體從開口部(狹縫)吐出。載台部70,係具有可載置玻璃支撐體10的載台。控制部80,係以一面使噴嘴部60相對於載台部70而進行移動,一面從噴嘴部60於玻璃支撐體10上塗佈液狀體的方式來進行控制。另外,分離層形成裝置90,係可為將噴嘴部60固定而使載台部70移動的構造,亦可為使噴嘴部60及載台部70之雙方皆移動的構造。
FIG. 6 is a perspective view showing an example of the separation
第7圖至第9圖,係對藉由上述之分離層形成裝置90來進行分離層形成工程S01的狀態作展示的工程圖。另外,在分離層形成工程S01之前,先作為分離層形成裝置90的噴嘴部60,而設置將用以形成分離層20的液狀體Q1吐出的狹縫噴嘴61。狹縫噴嘴61,係具有將用以形成分離層20的液狀體吐出的開口部61a。又,於第7圖至第9圖中,載台部70係省略。又,以下所說明的各部之動作係依照來自控制部80的指示。
FIGS. 7 to 9 are process diagrams showing the state in which the separation layer formation process S01 is performed by the separation
於分離層形成工程S01中,首先,係於載台部70配置玻璃支撐體10,之後,如第7圖(A)所示般,狹縫噴嘴61的開口部61a,係朝向玻璃支撐體10的分離層形成面10f地配置。此時,開口部61a,係作為液狀體Q1的吐出開始位置,而被配置於從玻璃支撐體10的端邊10a起距離特定距離LX1的位置處。接著,從開口部61a對分離層形成面10f吐出液狀體Q1。藉由此,從開口部61a所吐出的液
狀體Q1,係成為被夾在開口部61a與分離層形成面10f之間的狀態。
In the separation layer forming process S01, first, the
接著,如第7圖(B)所示般,狹縫噴嘴61,係一邊從開口部61a吐出液狀體Q1,一邊往X方向移動。藉由此動作,於狹縫噴嘴61的移動方向(+X方向)上,液狀體Q1係連續地被吐出,而於玻璃支撐體10的分離層形成面10f上塗佈液狀體Q1。又,液狀體Q1,係在狹縫噴嘴61往+X方向移動之後,也往與狹縫噴嘴61的移動方向相反方向(-X方向)擴展。藉由此液狀體Q1的擴展,而形成身為分離層20的端部20e之一的端邊20a。
Next, as shown in FIG. 7(B), the
接著,如第8圖(A)所示般,狹縫噴嘴61,係在開口部61a到達從玻璃支撐體10的端邊10b起距離特定距離LX2的位置處時停止移動,並停止來自開口部61a的液狀體Q1之吐出。其後,如第8圖(B)所示般,使狹縫噴嘴61上昇,讓開口部61a離開玻璃支撐體10。在到達特定距離LX2的時點,液狀體Q1的吐出係停止,但開口部61a會離開玻璃支撐體10,藉此而使液狀體Q1朝向玻璃支撐體10的端邊10b側而往+X方向擴展。藉由此液狀體Q1的擴展,而形成分離層20的端邊20b。此時,以避免液狀體Q1一直擴展到玻璃支撐體10的端邊10b為止的方式來設定距離LX2。
Next, as shown in FIG. 8(A), the
如此般,藉由亦對於在液狀體Q1之吐出開始及吐出停止之雙方的位置處之液狀體Q1擴展的情況作考慮,並調整玻璃支撐體10與狹縫噴嘴61之相對性移動範
圍,而成為可從移動方向(X方向)上之玻璃支撐體10的兩端邊10a、10b起,分別使分離層20的端邊20a、20b以距離L1、L2分離。
In this way, the relative movement range of the
又,如第9圖所示般,在一面使液狀體Q1從狹縫噴嘴61的開口部61a吐出一面使狹縫噴嘴61移動的情況,被塗佈於玻璃支撐體10的液狀體Q1,係分別往與狹縫噴嘴61的移動方向相正交的方向(Y方向),也就是往玻璃支撐體10的端邊10c側(+Y方向)、10d側(-Y方向)擴展。藉由此液狀體Q1的擴展,而形成分離層20的端邊20c、20d。
Moreover, as shown in FIG. 9, when the
於此情況中,針對與狹縫噴嘴61的移動方向相正交的方向(Y方向),調整開口部61a之開口寬幅的長度(Y方向的長度),以使從開口部61a的-Y側端部起至玻璃支撐體10的端邊10c為止成為距離MY1,並使從開口部61a的+Y側端部起至玻璃支撐體10的端邊10d為止成為距離MY2的方式來作設定。藉由此,成為可從與移動方向相正交的方向上之玻璃支撐體10的兩端邊10c、10d起,分別使分離層20的端邊20c、20d以距離M1、M2分離。開口部61a之開口寬幅的長度之調整,係可使用用以關閉開口部61a的一部分的閉塞構件等,亦可使用具有吻合玻璃支撐體10之Y方向的長度之專用的開口部61a的狹縫噴嘴61。
In this case, with respect to the direction (Y direction) orthogonal to the moving direction of the
上述之分離層20,係由例如藉由吸收光而變質的材料所形成。於本實施形態中,所謂分離層20變質,係指使分離層20成為受到些許外力即可被破壞的狀態,或是使與接觸分離層20的層之接著力降低的狀態。分離層
20,係藉由吸收光而變質,而相較於變質之前,使強度或是相對於玻璃支撐體10之接著性降低。因此,變質後的分離層20,係藉由施加些許外力(例如,將玻璃支撐體10抬起等)等,而被破壞或是從玻璃支撐體10剝離。
The above-mentioned
分離層20之變質,係可藉由所吸收的光之能量所致之(發熱性或非發熱性之)分解、交聯、立體配置之變化或是官能基之解離(接著,伴隨著該等而來的分離層20之硬化、脫氣、收縮或膨脹)等。分離層20之變質,係作為藉由構成分離層20的材料所致之光的吸收之結果而產生。因而,分離層20之變質的種類,係可因應於構成分離層20的材料的種類而變化。又,分離層20,並不限定於藉由吸收光而變質的材料。例如,亦可為無關於光,而藉由吸收所賦予的熱而變質的材料,或是其他之藉由溶劑等而變質的材料。
The deterioration of the
分離層20的厚度,例如,更理想為0.05~50μm,再更理想為0.3~1μm。只要分離層20的厚度落在0.05~50μm之範圍內,則藉由短時間的光的照射及低能量的光的照射,或是短時間的加熱、於溶劑中之短時間的浸漬等,即可於分離層20產生所期望的變質。又,分離層20的厚度,就生產性的觀點而言,特別理想係落在1μm以下之範圍內。
The thickness of the
以下,針對藉由所吸收的光的能量而變質的分離層20進行說明。分離層20,較理想係僅由具有吸收光的構造的材料所形成,但,亦可在不損壞本質性的特性之
範圍內,添加不具有吸收光的構造的材料來形成分離層20。又,較理想係使於分離層20之與接著層13相對向之側的面為平坦(無形成凹凸),藉由此,係成為可容易進行分離層20之形成,且於貼附時也可均勻地貼附。
Hereinafter, the
分離層20,亦可為藉由吸收從雷射所照射的光而變質者。亦即,為了使分離層20變質而對分離層20照射的光,亦可為從雷射所照射者。作為發射對分離層20照射的光的雷射之例,係可列舉:YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光等。發射對分離層20照射的光的雷射,係可因應於構成分離層20的材料來適當選擇,只要選擇照射可使構成分離層20的材料變質之波長的光的雷射即可。
The
分離層20係亦可由氟碳所構成。分離層20,係由於藉由氟碳所構成,因此被構成為藉由吸收光而變質,其結果,會喪失接受光的照射之前的強度或接著性。因而,藉由施加些許的外力(例如,將玻璃支撐體10抬起等),而破壞分離層20,而可將玻璃支撐體10與基板40輕易分離。構成分離層20的氟碳,係可藉由電漿CVD(化學氣相沉積)法而適宜地成膜。
The
氟碳,係依據其種類而吸收固有之範圍的波長之光。藉由對分離層照射使用於分離層20之氟碳會吸收之範圍的波長之光,而可使氟碳適宜地變質。另外,於分離層20之光的吸收率較理想為80%以上。
Fluorocarbons absorb light in a specific range of wavelengths depending on their type. By irradiating the separation layer with light having a wavelength in a range that the fluorocarbon used in the
作為對分離層20照射的光,係因應於氟碳所能吸收的波長,只要適當使用例如:YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光即可。作為可使氟碳變質的波長,雖無特別限定於此,但例如,可使用600nm以下之範圍者。
As the light irradiated to the
分離層20,亦可含有於其重複單元中包含有具有光吸收性的構造之聚合物。該聚合物係受到光的照射而變質。該聚合物之變質,係藉由上述構造吸收被照射的光而產生。分離層20,係作為聚合物之變質的結果,而喪失接受光的照射之前的強度或接著性。因而,藉由施加些許的外力(例如,將玻璃支撐體10抬起等),而破壞分離層20,而可將玻璃支撐體10與基板40輕易分離。
The
具有光吸收性之上述構造,係為吸收光而使包含有該構造作為重複單元的聚合物變質之化學構造。該構造,例如,係包含有取代或非取代之苯環、縮合環或雜 環所構成的共軛π電子系的原子團。更詳細而言,該構造,係可為Cardo構造、或是存在於上述聚合物之側鏈的二苯基酮構造、二苯基亞碸構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯基胺構造。 The above-mentioned structure having light-absorbing properties is a chemical structure for absorbing light and deteriorating the polymer containing the structure as a repeating unit. The structure, for example, contains substituted or unsubstituted benzene rings, condensed rings or heterocyclic rings A group of atoms formed by a ring of conjugated pi electrons. More specifically, the structure may be a Cardo structure, a diphenyl ketone structure, a diphenyl arylene structure, or a diphenyl arsenic structure (bisphenyl arsenic structure) existing in the side chain of the above-mentioned polymer. , diphenyl structure or diphenylamine structure.
在上述構造存在於上述聚合物之側鏈的情況,該構造係可藉由以下之式所表示。 When the above-mentioned structure exists in the side chain of the above-mentioned polymer, this structure can be represented by the following formula.
(式中,R係各自獨立為烷基、芳基、鹵素、羥基、酮基、亞碸基、碸基或N(R1)(R2)基(在此,R1及R2係各自獨立為氫原子或碳數1~5之烷基),Z係不存在,或是-CO-、-SO2-、-SO-或-NH-,n係0或1~5之整數)。 (in the formula, R is each independently an alkyl group, an aryl group, a halogen, a hydroxyl group, a keto group, a terylene group, a terylene group, or a N(R 1 )(R 2 ) group (here, R 1 and R 2 are each independently independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms), Z is absent, or -CO-, -SO 2 -, -SO- or -NH-, and n is an integer of 0 or 1 to 5).
又,上述聚合物,例如,係包含有於以下之式中,藉由(a)~(d)之任一者所表示的重複單元,或藉由(e)所表示,或是於其主鏈包含有(f)之構造。 In addition, the above-mentioned polymer, for example, is included in the following formula by the repeating unit represented by any one of (a) to (d), or represented by (e), or in the main The chain contains the construct of (f).
(式中,l係1以上之整數,m係0或1~2之整數,X係於(a)~(e)中上述之化學式[化1]所示之式的任一者,於(f)中上述之[化1]所示之式的任一者,或是不存在,Y1及Y2係各自獨立為-CO-或-SO2-。l較理想係10以下之整數)。
(in the formula, l is an integer of 1 or more, m is an integer of 0 or 1 to 2, X is any one of the formulas represented by the above chemical formula [Chemical formula 1] in (a) to (e), and in ( In f) any one of the formulas shown in the above [Formula 1], or there is no one, Y 1 and Y 2 are each independently -CO- or -
作為上述之化學式[化1]所示之苯環、縮合環及雜環之例,係可列舉:苯基、取代苯基、苄基、取代苄基、萘、取代萘、蒽、取代蒽、蒽醌、取代蒽醌、吖啶、取代吖啶、偶氮苯、取代偶氮苯、茀、取代茀、茀酮、取代茀酮、咔唑、取代咔唑、N-烷基咔唑、二苯并呋喃、取代二苯并呋喃、菲、取代菲、芘及取代芘。在所例示的取代基進一步具有取代基的情況,其之取代基,例如,選自由烷 基、芳基、鹵素原子、烷氧基、硝基、醛、氰基、醯胺、二烷基胺基、磺醯胺、醯亞胺、羧酸、羧酸酯、磺酸、磺酸酯、烷基胺基及芳基胺基。 Examples of the benzene ring, condensed ring and heterocyclic ring represented by the above chemical formula [Chem. 1] include phenyl, substituted phenyl, benzyl, substituted benzyl, naphthalene, substituted naphthalene, anthracene, substituted anthracene, Anthraquinones, Substituted Anthraquinones, Acridines, Substituted Acridines, Azobenzenes, Substituted Azobenzenes, Pyrene, Substituted Pyrenes, Pylenones, Substituted Pylenones, Carbazoles, Substituted Carbazoles, N-Alkylcarbazoles, Di Benzofuran, substituted dibenzofuran, phenanthrene, substituted phenanthrene, pyrene and substituted pyrene. In the case where the exemplified substituent further has a substituent, the substituent is, for example, selected from alkane group, aryl group, halogen atom, alkoxy group, nitro group, aldehyde, cyano group, amide, dialkylamine, sulfoamide, amide, carboxylic acid, carboxylate, sulfonic acid, sulfonate , alkylamine and arylamine.
於上述之化學式[化1]所示之取代基當中,作為具有2個苯基之第5號取代基,且Z為-SO2-的情況之例,係可列舉:雙(2,4-二羥苯基)碸、雙(3,4-二羥苯基)碸、雙(3,5-二羥苯基)碸、雙(3,6-二羥苯基)碸、雙(4-羥苯基)碸、雙(3-羥苯基)碸、雙(2-羥苯基)碸、及雙(3,5-二甲基-4-羥苯基)碸等。 Among the substituents represented by the above chemical formula [Chemical 1], examples of the fifth substituent having two phenyl groups and Z is -SO 2 - include: bis(2,4- Dihydroxyphenyl) bis(3,4-dihydroxyphenyl) bis(3,4-dihydroxyphenyl) bis(3,5-dihydroxyphenyl) bis(3,6-dihydroxyphenyl) bis(3,6-dihydroxyphenyl) bis(4- Hydroxyphenyl) bismuth, bis(3-hydroxyphenyl) bismuth, bis(2-hydroxyphenyl) bismuth, and bis(3,5-dimethyl-4-hydroxyphenyl) bismuth, etc.
於上述之化學式[化1]所示之取代基當中,作為具有2個苯基的第5號取代基,且Z為-SO-的情況之例,係可列舉:雙(2,3-二羥苯基)亞碸、雙(5-氯-2,3-二羥苯基)亞碸、雙(2,4-二羥苯基)亞碸、雙(2,4-二羥-6-甲基苯基)亞碸、雙(5-氯-2,4-二羥苯基)亞碸、雙(2,5-二羥苯基)亞碸、雙(3,4-二羥苯基)亞碸、雙(3,5-二羥苯基)亞碸、雙(2,3,4-三羥苯基)亞碸、雙(2,3,4-三羥-6-甲基苯基)-亞碸、雙(5-氯-2,3,4-三羥苯基)亞碸、雙(2,4,6-三羥苯基)亞碸、雙(5-氯-2,4,6-三羥苯基)亞碸等。 Among the substituents represented by the above-mentioned chemical formula [Chemical 1], as the fifth substituent having two phenyl groups and Z is -SO-, bis(2,3-di(2,3-di) is exemplified. Hydroxyphenyl) bis(5-chloro-2,3-dihydroxyphenyl) bis(5-chloro-2,3-dihydroxyphenyl) bis(2,4-dihydroxyphenyl) bis(2,4-dihydroxyphenyl) bis(2,4-dihydroxy-6- Methylphenyl) bis(5-chloro-2,4-dihydroxyphenyl) bis(5-chloro-2,4-dihydroxyphenyl) bis(2,5-dihydroxyphenyl) bis(2,5-dihydroxyphenyl) bis(3,4-dihydroxyphenyl) ) bis(3,5-dihydroxyphenyl) bis(2,3,4-trihydroxyphenyl) bis(2,3,4-trihydroxyphenyl) bis(2,3,4-trihydroxy-6-methylbenzene) bis(2,4,6-trihydroxyphenyl) bis(5-chloro-2,3,4-trihydroxyphenyl) bis(5-chloro-2,3,4-trihydroxyphenyl) bis(2,4,6-trihydroxyphenyl) bis(5-chloro-2, 4,6-trihydroxyphenyl) selenium and so on.
於上述之化學式[化1]所示之取代基當中,作為具有2個苯基的第5號取代基,且Z為-C(=O)-的情況之例,係可列舉:2,4-二羥二苯基酮、2,3,4-三羥二苯基酮、2,2’,4,4’-四羥二苯基酮、2,2’,5,6’-四羥二苯基酮、2-羥-4-甲氧基二苯基酮、2-羥-4-辛氧基二苯基酮、2-羥-4-十二烷氧基二苯基酮、2,2’-二羥-4-甲氧基二苯基酮、2,6- 二羥-4-甲氧基二苯基酮、2,2’-二羥-4,4’-二甲氧基二苯基酮、4-胺基-2’-羥二苯基酮、4-二甲基胺基-2’-羥二苯基酮、4-二乙基胺基-2’-羥二苯基酮、4-二甲基胺基-4’-甲氧基-2’-羥二苯基酮、4-二甲基胺基-2’,4’-二羥二苯基酮、及4-二甲基胺基-3’,4’-二羥二苯基酮等。 Among the substituents represented by the above chemical formula [Chemical 1], examples of the case where Z is -C(=O)- as the fifth substituent having two phenyl groups include: 2,4 -Dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,2',5,6'-tetrahydroxybenzophenone 2-Hydroxy-4-methoxy benzophenone, 2-hydroxy-4-octyloxy benzophenone, 2-hydroxy-4-dodecyloxy benzophenone, 2 ,2'-Dihydroxy-4-methoxydiphenyl ketone, 2,6- Dihydroxy-4-methoxydiphenone, 2,2'-dihydroxy-4,4'-dimethoxydiphenone, 4-amino-2'-hydroxydiphenylketone, 4 -Dimethylamino-2'-hydroxybenzophenone, 4-diethylamino-2'-hydroxybenzophenone, 4-dimethylamino-4'-methoxy-2' -Hydroxybenzophenone, 4-dimethylamino-2',4'-dihydroxybenzophenone, and 4-dimethylamino-3',4'-dihydroxybenzophenone, etc. .
在上述構造存在於上述聚合物之側鏈的情況,包含有上述構造的重複單元之於上述聚合物中所佔有的比例,係為使分離層20之光的透過率成為0.001%以上、10%以下之範圍內。只要以使該比例落入這種範圍的方式來調製聚合物,則分離層20會充分地吸收光,而可確實且迅速地變質。亦即,從層積體50之玻璃支撐體10的去除為容易,而可縮短該去除所必要的光之照射時間。
When the above-mentioned structure exists in the side chain of the above-mentioned polymer, the proportion of the repeating unit including the above-mentioned structure in the above-mentioned polymer is such that the light transmittance of the
上述構造,係依據其種類之選擇,而可吸收具有所期望之範圍的波長之光。例如,上述構造所能吸收的光之波長,更理想為100nm以上、2,000nm以下之範圍內。於此範圍內,上述構造所能吸收的光之波長,係為更短波長側,例如,係為100nm以上、500nm以下之範圍內。例如,上述構造,係藉由吸收具有較理想為大約300nm以上、370nm以下之範圍內的波長之紫外光,而可使包含有該構造的聚合物變質。 The above-mentioned structure can absorb light having a wavelength in a desired range depending on the selection of the type. For example, the wavelength of light that can be absorbed by the above structure is more preferably in the range of 100 nm or more and 2,000 nm or less. Within this range, the wavelength of light that can be absorbed by the structure is on the shorter wavelength side, for example, in the range of 100 nm or more and 500 nm or less. For example, in the above-mentioned structure, the polymer containing the structure can be degraded by absorbing ultraviolet light having a wavelength in the range of preferably about 300 nm or more and 370 nm or less.
上述構造所能吸收的光,例如,由高壓水銀燈(波長:254nm以上、436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波 長:351nm)或固體UV雷射(波長:355nm)所發出的光、或是g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。 The light that can be absorbed by the above structure is, for example, a high-pressure mercury lamp (wavelength: above 254 nm and below 436 nm), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser (wavelength: 157nm), XeCl laser (wavelength: 308nm), XeF laser (wavelength: 308nm) Length: 351nm) or solid-state UV laser (wavelength: 355nm), or g-line (wavelength: 436nm), h-line (wavelength: 405nm) or i-line (wavelength: 365nm).
上述之分離層20,雖含有作為重複單元而包含有上述構造的聚合物,但分離層20,係可進一步包含上述聚合物以外的成分。作為該成分,係可列舉:填料、可塑劑、及可提昇玻璃支撐體10之剝離性的成分等。該等成分,係由不妨礙以上述構造所致之光的吸收及聚合物之變質或是有所促進之以往周知的物質或材料中適當選擇。
The above-described
分離層20亦可由無機物所構成。分離層20,係藉由以無機物所構成,而成為藉由吸收光而變質,其結果,會喪失接受光的照射之前的強度或接著性。因而,藉由施加些許的外力(例如,將玻璃支撐體10抬起等),而破壞分離層20,而可將玻璃支撐體10與基板40輕易分離。
The
上述無機物,係只要藉由吸收光而變質的構成即可,例如,可適宜使用選自由金屬、金屬化合物及碳所成之群中的1種以上之無機物。金屬化合物,係指包含金屬原子之化合物,例如,可為金屬氧化物、金屬氮化物。作為這種無機物之例示,雖不限定於此,但可列舉:選自由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN、及碳所成之群中的1種類以上之無機物。另外,所謂的碳,係指可包括碳之同素異形體的概念,例 如,可為金剛石、富勒烯、類鑽碳、奈米碳管等。 The above-mentioned inorganic substance only needs to have a structure that changes in quality by absorbing light, and for example, one or more inorganic substances selected from the group consisting of metals, metal compounds, and carbon can be suitably used. Metal compounds refer to compounds containing metal atoms, for example, metal oxides and metal nitrides. Examples of such inorganic substances are not limited to these, but include those selected from the group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. One or more inorganic substances in a group. In addition, the so-called carbon refers to a concept that can include an allotrope of carbon, for example, diamond, fullerene, diamond-like carbon, carbon nanotube, and the like.
上述無機物,係依據其種類而吸收固有之範圍的波長之光。藉由對分離層照射使用於分離層20之無機物會吸收的波長之光,而可使上述無機物適宜地變質。
The above-mentioned inorganic substances absorb light of wavelengths in a specific range according to their types. By irradiating the separation layer with light of a wavelength that is absorbed by the inorganic substances used in the
作為對由無機物所構成之分離層20照射的光,係因應於上述無機物所能吸收的波長,例如,只要適當使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光、或是非雷射光即可。
The light irradiated to the
由無機物所構成之分離層20,係藉由例如濺鍍、化學沉積(CVD)、電鍍、電漿CVD、旋轉塗佈等之周知的技術,而可形成於玻璃支撐體10上。由無機物所構成之分離層20的厚度並無特別限定,只要是可充分地吸收所使用的光之膜厚即可,但,例如更理想係設為0.05μm以上、10μm以下之範圍內的膜厚。又,亦可於構成分離層20之由無機物所構成之無機膜(例如,金屬膜)的兩面或單面預先塗佈接著劑,而貼附於玻璃支撐體10及基板40。
The
另外,在作為分離層20而使用金屬膜的情況時,依據分離層20的膜質、雷射光源的種類、雷射輸出等之條件,係會引起雷射之反射或對於膜之帶電等。因此,較理想係藉由將抗反射膜或抗靜電膜設置於分離層20的上下或者其中一方,而謀求該等情況之對策。
In addition, when a metal film is used as the
分離層20,亦可為藉由具有紅外線吸收性之構造的化合物所形成。該化合物,係藉由吸收紅外線而變質。分離層20,係作為化合物之變質的結果,而喪失接受紅外線的照射之前的強度或接著性。因而,藉由施加些許的外力(例如,將支撐體抬起等),而破壞分離層20,而可將玻璃支撐體10與基板40輕易分離。
The
作為具有紅外線吸收性之構造、或是包含具有紅外線吸收性之構造的化合物,例如:可為烷烴、烯(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、疊烯、環式)、炔烴(一取代、二取代)、單環式芳香族(苯、一取代、二取代、三取代)、醇及酚類(自由OH、分子內氫鍵、分子間氫鍵、飽和第二級、飽和第三級、不飽和第二級、不飽和第三級)、縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮、二烷基羰基、芳香族羰基、1,3-二酮之烯醇、o-羥芳基酮、二烷基醛、芳香族醛、羧酸(二聚物、羧酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族酸氯化物、芳香族酸氯化物、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、碳二醯亞胺、脂 肪族異腈、芳香族異腈、異氰酸酯、硫氰酸酯、脂肪族異硫氰酸酯、芳香族異硫氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝基胺、亞硝胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪族、芳香族、單聚物、二聚物)、硫醇及硫酚及硫醇酸等之硫化合物、硫羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1鍵(A1為H、C、O或是鹵素)、P-A2鍵(A2為H、C或O)、或是Ti-O鍵。 As a structure with infrared absorption, or a compound containing a structure with infrared absorption, for example: alkane, alkene (vinyl, trans, cis, vinylidene, trisubstituted, tetrasubstituted, conjugated, azide) Alkenes, cyclic), alkynes (monosubstituted, disubstituted), monocyclic aromatics (benzene, monosubstituted, disubstituted, trisubstituted), alcohols and phenols (free OH, intramolecular hydrogen bonds, intermolecular hydrogen bond, saturated second order, saturated third order, unsaturated second order, unsaturated third order), acetal, ketal, aliphatic ether, aromatic ether, vinyl ether, ethylene oxide cyclic ether, Peroxide ethers, ketones, dialkylcarbonyls, aromatic carbonyls, enols of 1,3-diketones, o-hydroxyaryl ketones, dialkylaldehydes, aromatic aldehydes, carboxylic acids (dimers, carboxylic acids) acid anion), formate, acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic acid chloride, aromatic acid chloride, Anhydrides (conjugated, non-conjugated, cyclic, acyclic), primary amides, secondary amides, lactamides, primary amines (aliphatic, aromatic), secondary amines (aliphatic, aromatic) , tertiary amine (aliphatic, aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carbodiimide, aliphatic isonitrile, aromatic Isonitrile, isocyanate, thiocyanate, aliphatic isothiocyanate, aromatic isothiocyanate, aliphatic nitro compound, aromatic nitro compound, nitroamine, nitrosamine, nitrate, nitroso Nitrates, nitroso bonds (aliphatic, aromatic, monomers, dimers), thiols, thiophenols and thiol acids, sulfur compounds, thiocarbonyl, sulfite, sulfite, sulfonic acid chloride, primary Sulfonamide, secondary sulfonamide, sulfate, carbon-halogen bond, Si-A 1 bond (A 1 is H, C, O or halogen), PA 2 bond (A 2 is H, C or O) , or Ti-O bonds.
作為包含上述碳-鹵素鍵之構造,可列舉例如:-CH2Cl、-CH2Br、-CH2I、-CF2-、-CF3、-CH=CF2、-CF=CF2、芳基氟、及芳基氯等。 Examples of the structure including the carbon-halogen bond include -CH 2 Cl, -CH 2 Br, -CH 2 I, -CF 2 -, -CF 3 , -CH=CF 2 , -CF=CF 2 , Aryl fluorine, aryl chloride, etc.
作為包含上述Si-A1鍵之構造,係可列舉:SiH、SiH2、SiH3、Si-CH3、Si-CH2-、Si-C6H5、SiO-脂肪族、Si-OCH3、Si-OCH2CH3、Si-OC6H5、Si-O-Si、Si-OH、SiF、SiF2、及SiF3等。作為包含Si-A1鍵之構造,尤其是以形成有矽氧烷骨架及倍半矽氧烷骨架為理想。 Examples of the structure including the above-mentioned Si-A 1 bond include SiH, SiH 2 , SiH 3 , Si-CH 3 , Si-CH 2 -, Si-C 6 H 5 , SiO-aliphatic, and Si-OCH 3 , Si-OCH 2 CH 3 , Si-OC 6 H 5 , Si-O-Si, Si-OH, SiF, SiF 2 , and SiF 3 , etc. As a structure containing Si-A 1 bond, it is preferable to form especially a siloxane skeleton and a silsesquioxane skeleton.
作為包含上述P-A2鍵之構造,係可列舉:PH、PH2、P-CH3、P-CH2-、P-C6H5、A3 3-P-O(A3為脂肪族或芳香族)、(A4O)3-P-O(A4為烷基)、P-OCH3、P-OCH2CH3、P-OC6H5、P-O-P、P-OH、及O=P-OH等。 Examples of structures including the above-mentioned PA 2 bond include PH, PH 2 , P-CH 3 , P-CH 2 -, PC 6 H 5 , A 3 3 -PO (A 3 is aliphatic or aromatic), (A 4 O) 3 -PO (A 4 is an alkyl group), P-OCH 3 , P-OCH 2 CH 3 , P-OC 6 H 5 , POP, P-OH, and O=P-OH, and the like.
上述構造,係依據其種類之選擇,而可吸收具有所期望之範圍的波長之紅外線。具體而言,上述構造所能吸收的紅外線之波長,例如,係1μm以上、20μm以下之範圍內,且可更適宜吸收2μm以上、15μm以下之範圍 內。進而,在上述構造為Si-O鍵、Si-C鍵及Ti-O鍵的情況時,係可為9μm以上、11μm以下之範圍內。另外,各構造可吸收的紅外線之波長,係只要是該業者則可容易理解。例如,作為各構造中之吸收帶,係可參照非專利文獻:SILVERSTEIN‧BASSLER‧MORRILL著「有機化合物之以光譜所致之鑑定法(第5版)-MS、IR、NMR、UV之併用-」(1992年發行)第146頁~第151頁的記載。 The above-mentioned structure can absorb infrared rays having a wavelength in a desired range depending on the selection of the type. Specifically, the wavelength of infrared rays that can be absorbed by the above-mentioned structure is, for example, in the range of 1 μm or more and 20 μm or less, and can be more suitably absorbed in the range of 2 μm or more and 15 μm or less. Inside. Furthermore, when the said structure is a Si-O bond, a Si-C bond, and a Ti-O bond, it can be in the range of 9 micrometers or more and 11 micrometers or less. In addition, the wavelength of infrared rays that can be absorbed by each structure can be easily understood by those in the industry. For example, as an absorption band in each structure, non-patent literature: SILVERSTEIN·BASSLER·MORRILL, "Spectroscopic Identification of Organic Compounds (5th Edition) - Combined Use of MS, IR, NMR, and UV-" ” (published in 1992), pp. 146~151.
作為被使用於分離層20之形成的具有紅外線吸收性之構造的化合物,係於具有上述般之構造的化合物當中,只要是可為了塗佈而溶解於溶媒中,並可被固化而形成固體層者,則無特別限定。然而,為了使分離層20中的化合物有效地變質,而使玻璃支撐體10與基板40之分離容易,較理想係分離層20之紅外線的吸收為大,亦即,對分離層20照射紅外線時之紅外線之透過率為低。具體而言,較理想係分離層20之紅外線之透過率低於90%,更理想係紅外線之透過率低於80%。
As the compound having an infrared absorbing structure used for the formation of the
若列舉一例進行說明,則作為具有矽氧烷骨架之化合物,例如:可使用身為以下述之化學式[化3]所表示的重複單元及以下述之化學式[化4]所表示之重複單元的共聚物之樹脂,或是身為以下述之化學式[化4]所表示之重複單元及來自丙烯酸系化合物之重複單元的共聚物之樹脂。 As an example of the compound having a siloxane skeleton, for example, a repeating unit represented by the following chemical formula [Chemical 3] and a repeating unit represented by the following chemical formula [Chemical 4] can be used. The resin of the copolymer is a copolymer of a repeating unit represented by the following chemical formula [Chemical 4] and a repeating unit derived from an acrylic compound.
其中,作為具有矽氧烷骨架之化合物,更理想係身為以上述之化學式[化3]所表示之重複單元及以下述之化學式[化5]所表示之重複單元的共聚物之t-丁基苯乙烯(TBST)-二甲基矽氧烷共聚物,再更理想係以1:1包含有以上述之化學式[化3]所表示之重複單元及以下述之化學式[化5]所表示之重複單元的TBST-二甲基矽氧烷共聚物。 Among them, as a compound having a siloxane skeleton, t-butane which is a copolymer of a repeating unit represented by the above-mentioned chemical formula [Chemical 3] and a repeating unit represented by the following chemical formula [Chemical 5] is more preferable TBST-dimethylsiloxane copolymer, more preferably containing repeating units represented by the above chemical formula [Chemical 3] and the following chemical formula [Chemical 5] in a ratio of 1:1 The repeating unit of TBST-dimethylsiloxane copolymer.
又,作為具有倍半矽氧烷骨架之化合物,例如,可使用身為以下述之化學式[化6]所表示之重複單元及以下述之化學式[化7]所表示之重複單元的共聚物之樹脂。 In addition, as the compound having a silsesquioxane skeleton, for example, a copolymer which is a repeating unit represented by the following chemical formula [Chemical 6] and a repeating unit represented by the following chemical formula [Chemical 7] can be used. resin.
(上述之化學式[化6]中,R4為氫或碳數1以上、10以下之烷基,上述之化學式[化7]中,R5為碳數1以上、10以下之烷基,或苯基)。 (In the above chemical formula [Chemical 6], R 4 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and in the above chemical formula [Chemical 7], R 5 is an alkyl group with 1 to 10 carbon atoms or less, or phenyl).
作為具有倍半矽氧烷骨架之化合物,其他亦可適宜利用於日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、日本特開2009-263316號公報(2009年11月12日公開)及日本特開2009-263596號公報(2009年11月12日公開)中所揭示的各倍半矽氧烷樹脂。 As a compound having a silsesquioxane skeleton, others can also be suitably used in JP 2007-258663 A (published on October 4, 2007) and JP 2010-120901 A (published on June 3, 2010) sesquisiloxane resins disclosed in Japanese Patent Laid-Open No. 2009-263316 (published on November 12, 2009) and Japanese Patent Laid-Open No. 2009-263596 (published on November 12, 2009).
其中,作為具有倍半矽氧烷骨架之化合物,更理想係身為以下述之化學式[化8]所表示之重複單元及以下述之化學式[化9]所表示之重複單元的共聚物,再更理想係以7:3包含有以下述之化學式[化8]所表示之重複單元及以下述之化學式[化9]所表示之重複單元的共聚物。 Among them, as the compound having a silsesquioxane skeleton, it is more desirable to be a copolymer of repeating units represented by the following chemical formula [Chemical 8] and repeating units represented by the following chemical formula [Chemical 9], and More preferably, it is a copolymer containing the repeating unit represented by the following chemical formula [Chemical 8] and the repeating unit represented by the following chemical formula [Chemical 9] at 7:3.
作為具有倍半矽氧烷骨架之聚合物,雖可為無規構造、梯狀構造、及籠型構造,但亦可為任何構造。 As the polymer having a silsesquioxane skeleton, although a random structure, a ladder structure, and a cage structure may be used, any structure may be used.
又,作為包含Ti-O鍵之化合物,係可列舉例如:(i)四-i-丙氧基鈦、四-n-丁氧基鈦、肆(2-乙基己氧基)鈦、及鈦-i-丙氧基辛甘醇酸酯等之烷氧基鈦;(ii)二-i-丙氧基‧雙(乙醯丙酮)鈦、及丙烷二氧基鈦雙(乙醯乙酸乙酯)等之螯合物鈦;(iii)i-C3H7O-[-Ti(O-i-C3H7)2-O-]n-i-C3H7、及n-C4H9O-[-Ti(O-n-C4H9)2-O-]n-n-C4H9等之鈦聚合物;(iv)三-n-丁氧基鈦單硬脂酸酯、鈦硬脂酸酯、二-i-丙氧基鈦二異硬脂酸酯、及(2-n-丁氧基羰基苯甲醯氧基)三丁氧基鈦等之醯化物鈦;(v)二-n-丁氧基‧雙(三乙醇胺化物)鈦等之水溶性鈦化合物等。 Moreover, as a compound containing a Ti-O bond, for example, (i) tetra-i-propoxytitanium, tetra-n-butoxytitanium, tetra(2-ethylhexyloxy)titanium, and Titanium alkoxides such as titanium-i-propoxy octane glycolate; (ii) di-i-propoxy·bis(acetone acetone) titanium, and propanedioxytitanium bis(acetoacetate ethyl) (iii) iC 3 H 7 O-[-Ti(OiC 3 H 7 ) 2 -O-] n -iC 3 H 7 , and nC 4 H 9 O-[-Ti ( Titanium polymers of OnC 4 H 9 ) 2 -O-] n -nC 4 H 9 etc.; (iv) tri-n-butoxytitanium monostearate, titanium stearate, di-i-propane Oxytitanium diisostearate, and (2-n-butoxycarbonylbenzyloxy)tributoxytitanium and other oxytitanium compounds; (v) Di-n-butoxy·bis( Triethanolamine compound) water-soluble titanium compounds such as titanium, etc.
其中,作為包含Ti-O鍵之化合物,較理想為二-n-丁氧基‧雙(三乙醇胺化物)鈦(Ti(OC4H9)2[OC2H4N(C2H4OH)2]2)。 Among them, as a compound containing a Ti-O bond, bis-n-butoxy·bis(triethanolamide) titanium (Ti(OC 4 H 9 ) 2 [OC 2 H 4 N(C 2 H 4 OH) is preferable ) 2 ] 2 ).
上述之分離層20,雖含有具有紅外線吸收性之構造的化合物,但分離層20,係可進一步包含上述化合物以外的成分。作為該成分,係可列舉:填料、可塑劑、及可提昇玻璃支撐體10之剝離性的成分等。該等成分,係由不妨礙以上述構造所致之紅外線的吸收、及化合物之變質,或是促進之以往周知的物質或材料中適當選擇。
The above-described
分離層20,亦可含有紅外線吸收物質。分離層20,係由於含有紅外線吸收物質所構成,因此被構成為藉由吸收光而變質,其結果,會喪失接受光的照射之前的強度或接
著性。因而,藉由施加些許的外力(例如,將玻璃支撐體10抬起等),而破壞分離層20,而可將玻璃支撐體10與基板40輕易分離。
The
紅外線吸收物質,係只要是藉由吸收紅外線而變質的構成即可,例如,可適宜使用碳黑、鐵粒子、或鋁粒子。紅外線吸收物質,係依據其種類而吸收固有之範圍的波長之光。藉由對分離層20照射使用於分離層20之紅外線吸收物質會吸收的範圍之波長的光,而可使紅外線吸收物質適宜地變質。
The infrared absorbing material may be any structure as long as it is changed in quality by absorbing infrared rays, and for example, carbon black, iron particles, or aluminum particles can be suitably used. Infrared absorbing substances absorb light of wavelengths in an inherent range according to their type. By irradiating the
接著層形成工程S02係在分離層形成工程S01之後進行。於接著層形成工程S02中,例如,係如第3圖(A)所示般,於分離層20之玻璃支撐體10不存在之側,也就是於接著層形成面20f,以與分離層20彼此相接合的方式形成接著層30。於接著層形成工程S02中,係在接著層30的端部30e從分離層20的端部20e分離的狀態下,使接著層30形成於分離層20上。例如,首先,將接著層30形成於分離層20之接著層形成面20f的全面。其後,將接著層30的端部30e的周緣去除,而使接著層30的端部30e成為從分離層20的端部20e分離的狀態。
The next layer formation process S02 is performed after the separation layer formation process S01. In the adhesive layer forming process S02, for example, as shown in FIG. 3(A), on the side where the
於第3圖(A)所示之例中,接著層30係具有端邊30a、30b。例如,端邊30a、30b,係分別與分離層20的端邊20a、20b平行地配置。接著層30的端邊30a,係與分
離層20的端邊20a之間隔著距離L3地配置。接著層30的端邊30b,係與分離層20的端邊20b之間隔著距離L4地配置。距離L3與距離L4,係可分別為相同之值,亦可為彼此相異之值。
In the example shown in FIG. 3(A), the
於接著層形成工程S02中,係可於分離層20塗佈包含接著劑的液狀體,亦可將於兩面塗佈有接著劑的接著膠帶貼附於分離層20。作為接著劑之塗佈方法,雖無特別限定,但可列舉例如:旋轉塗佈法、浸漬法、輥式刮刀法、刮刀法、噴塗法、狹縫噴嘴法所致之塗佈法等。又,亦可在將接著劑塗佈於分離層20上之後,藉由加熱等而使其乾燥。又,作為接著劑,例如,係可使用丙烯酸系、酚醛清漆系、萘醌系、烴系、聚醯亞胺系、彈性體等之在該領域中周知的各種接著劑。
In the adhesive layer forming process S02 , a liquid body containing an adhesive may be applied to the
第10圖及第11圖,係對進行接著層形成工程S02的狀態作展示的工程圖。於接著層形成工程S02中,係使用具有與分離層形成裝置90同樣的構造之接著層形成裝置來進行。另外,接著層形成工程S02,係亦可使用與分離層形成裝置90相同的裝置來進行。於此情況中,在接著層形成工程S02之前,先取代狹縫噴嘴61,而設置將用以形成接著層30的液狀體Q2吐出的狹縫噴嘴62。狹縫噴嘴62,係使針對與移動方向(X方向)相正交的方向(Y方向)之開口部62a的尺寸變得比狹縫噴嘴61之開口部61a的尺寸更
小。
Fig. 10 and Fig. 11 are engineering drawings showing the state in which the bonding layer forming step S02 is performed. The adhesive layer forming process S02 is performed using an adhesive layer forming apparatus having the same structure as that of the separation
於接著層形成工程S02中,係如第10圖所示般,於載台部70配置玻璃支撐體10,之後,將狹縫噴嘴62的開口部62a朝向分離層20之接著層形成面20f作配置,而從開口部62a對接著層形成面20f吐出液狀體Q2。此時,開口部62a之液狀體Q2的吐出開始位置,係被設定於從玻璃支撐體10的端邊10a起距離特定距離LX3的位置處。
In the adhesive layer forming process S02 , as shown in FIG. 10 , the
其後,一面使狹縫噴嘴62往+Y方向移動一面從開口部62a吐出液狀體Q2。藉由此動作,而於狹縫噴嘴62的移動方向(+X方向)塗佈液狀體Q2。又,液狀體Q2,係往與狹縫噴嘴62的移動方向相反方向(-X方向)擴展。藉由此液狀體Q2的擴展,而形成接著層30的端邊30a。另外,以避免液狀體Q2一直流到分離層20的端邊20a的方式來設定距離LX3。在狹縫噴嘴62的開口部62a到達從分離層20的端邊20b起距離特定距離LX4的位置處時,停止狹縫噴嘴62的移動,並停止來自開口部62a的液狀體Q2之吐出。其後,使狹縫噴嘴62上昇,讓開口部62a離開分離層20。在到達特定距離LX4的時點,液狀體Q2的吐出係停止,但是,起因於開口部62a離開分離層20,液狀體Q2係會往分離層20的端邊20b側擴展。藉由此液狀體Q2的擴展,而形成接著層30的端邊30b。此時,以避免液狀體Q2一直流到分離層20的端邊20b的方式來設定距離LX4。
Thereafter, the liquid body Q2 is discharged from the
如此般,藉由調整分離層20(玻璃支撐體10)與狹縫噴嘴62之相對性移動範圍,而成為可從移動方向上
之分離層20的兩端邊20a、20b起,分別使接著層30的端邊30a、30b以距離L3、L4分離。
In this way, by adjusting the relative movement range of the separation layer 20 (glass support 10 ) and the
又,如第11圖所示般,在一面使液狀體Q2從狹縫噴嘴62的開口部62a吐出一面使狹縫噴嘴62移動的情況,被塗佈於分離層20上的液狀體Q2,係分別往與狹縫噴嘴62的移動方向相正交的方向(Y方向),也就是說往分離層20的端邊20c側(+Y方向)、20d側(-Y方向)擴展。藉由此液狀體Q2的擴展,而形成接著層30的端邊30c、30d。
Furthermore, as shown in FIG. 11, when the
於此情況中,針對與狹縫噴嘴62的移動方向相正交的方向(Y方向),調整開口部62a的開口寬幅的長度(Y方向的長度),以使從開口部62a的-Y側端部起直至分離層20的端邊20c為止成為距離MY3,並使從開口部62a的+Y側端部起直至分離層20的端邊20d為止成為距離MY4的方式來作設定。藉由此,成為可從與移動方向相正交的方向上之分離層20的兩端邊20c、20d起,分別使接著層30的端邊30c、30d以距離M3、M4分離。開口部62a的開口寬幅之長度的調整係與上述之狹縫噴嘴61相同。
In this case, with respect to the direction (Y direction) orthogonal to the moving direction of the
作為於接著層30中所含有的樹脂,係只要具備有接著性者即可,可列舉例如:烴樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂等、或是將此等組合而成者等。
The resin contained in the
接著劑之玻璃轉移溫度(Tg),係依據上述樹脂的種類或分子量、及對於接著劑之可塑劑等的摻合物而改變。於上述接著劑中所含有的樹脂的種類或分子量,雖
可因應於基板及支撐體的種類而適當選擇,但使用於接著劑的樹脂之Tg,較理想為-60℃以上、200℃以下之範圍內,更理想為-25℃以上、150℃以下之範圍內。藉由使用於接著劑的樹脂之Tg為-60℃以上、200℃以下之範圍內,能夠在冷卻上不須耗費過剩的能量地而適宜的使接著層30的接著力降低。又,接著層30之Tg,係亦可適當地藉由摻合可塑劑或低聚合度的樹脂等而調整。玻璃轉移溫度(Tg),例如,係可使用周知之示差掃描熱量測定裝置(DSC)來測定。
The glass transition temperature (Tg) of the adhesive varies depending on the type or molecular weight of the above-mentioned resin, and the blend of plasticizers and the like for the adhesive. The type or molecular weight of the resin contained in the above-mentioned adhesive, although
It can be appropriately selected according to the type of substrate and support, but the Tg of the resin used for the adhesive is preferably in the range of -60°C or higher and 200°C or lower, and more preferably -25°C or higher and 150°C or lower. within the range. When the Tg of the resin used for the adhesive is in the range of -60°C or higher and 200°C or lower, the adhesive force of the
烴樹脂,係具有烴骨架,並由單體組成物聚合而成的樹脂。作為烴樹脂,雖可列舉環烯烴系聚合物(以下,有時稱為「樹脂(A)」)、以及選自由萜烯樹脂、松香系樹脂及石油樹脂所成之群的至少1種之樹脂(以下,有時稱為「樹脂(B)」)等,但並不限定於此。 A hydrocarbon resin is a resin having a hydrocarbon skeleton and polymerized from a monomer composition. Examples of the hydrocarbon resin include cycloolefin-based polymers (hereinafter, sometimes referred to as "resin (A)") and at least one resin selected from the group consisting of terpene resins, rosin-based resins, and petroleum resins. (Hereinafter, it may be called "resin (B)") etc., but it is not limited to this.
作為樹脂(A),係亦可為將包含環烯烴系單體之單體成分聚合而成的樹脂。具體而言,係可列舉:包含環烯烴系單體的單體成分之開環(共)聚合物、使包含環烯烴系單體的單體成分進行加成(共)聚合而成的樹脂等。 The resin (A) may be a resin obtained by polymerizing a monomer component including a cycloolefin-based monomer. Specifically, a ring-opening (co)polymer containing a monomer component containing a cycloolefin-based monomer, a resin obtained by addition (co)polymerizing a monomer component containing a cycloolefin-based monomer, and the like may be mentioned. .
作為於構成樹脂(A)之單體成分中所包含的前述環烯烴系單體,係可列舉例如:降莰烯、降冰片二烯等之雙環體、二環戊二烯、二羥基戊二烯等之三環體、四環十二烯等之四環體、環戊二烯三聚物等之五環體、四環 戊二烯等之七環體、或是該等多環體之烷基(甲基、乙基、丙基、丁基等)取代物、烯基(乙烯基等)取代物、烷叉基(亞乙基等)取代物、芳基(苯基、基、萘基等)取代物等。此等之中,尤其是以降莰烯、四環十二烯、或是選自由此等之烷基取代物所成之群的降莰烯系單體為理想。 Examples of the cycloolefin-based monomer contained in the monomer component constituting the resin (A) include bicyclic bodies such as norbornene and norbornadiene, dicyclopentadiene, and dihydroxypentadiene. Tricyclics such as alkenes, tetracyclics such as tetracyclododecene, pentacyclics such as cyclopentadiene trimers, heptacyclics such as tetracyclopentadiene, or any of these polycyclics Alkyl (methyl, ethyl, propyl, butyl, etc.) substitution, alkenyl (vinyl, etc.) substitution, alkylidene (ethylene, etc.) substitution, aryl (phenyl, base, naphthyl, etc.) substituents, etc. Among these, norbornene, tetracyclododecene, or a norbornene-based monomer selected from the group of alkyl-substituted products thereof is particularly preferable.
構成樹脂(A)之單體成分,係可含有可與上述之環烯烴系單體共聚合的其他單體,例如,較理想係含有烯類單體。作為烯類單體,係可列舉例如:乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。烯類單體,係可為直鏈狀,亦可為分支鏈狀。 The monomer component constituting the resin (A) may contain other monomers that can be copolymerized with the above-mentioned cycloolefin-based monomer, and preferably contains, for example, an ethylenic monomer. As an ethylenic monomer, ethylene, propylene, 1-butene, isobutylene, 1-hexene, α-olefin, etc. are mentioned, for example. The vinyl monomer may be linear or branched.
又,作為構成樹脂(A)之單體成分,而含有環烯烴單體者,係就高耐熱性(低熱分解、熱重量減少性)的觀點而言,為理想。環烯烴單體相對於構成樹脂(A)之單體成分全體的比例,較理想為5莫耳%以上,更理想為10莫耳%以上,再更理想為20莫耳%以上。又,環烯烴單體相對於構成樹脂(A)之單體成分全體的比例,雖無特別限定,但就溶解性及在溶液中之經時安定性的觀點而言,較理想為80莫耳%以下,更理想為70莫耳%以下。 Moreover, it is preferable from a viewpoint of high heat resistance (low thermal decomposition, thermal weight reduction property) that contains a cycloolefin monomer as a monomer component which comprises resin (A). The ratio of the cycloolefin monomer to the whole of the monomer components constituting the resin (A) is preferably 5 mol % or more, more preferably 10 mol % or more, and still more preferably 20 mol % or more. In addition, the ratio of the cycloolefin monomer to the whole of the monomer components constituting the resin (A) is not particularly limited, but is preferably 80 mol from the viewpoints of solubility and stability over time in a solution % or less, more preferably 70 mol% or less.
又,作為構成樹脂(A)之單體成分,亦可含有直鏈狀或分支鏈狀的烯類單體。烯類單體相對於構成樹脂(A)之單體成分全體的比例,就溶解性及柔軟性的觀點而言,較理想為10~90莫耳%,更理想為20~85莫耳%,再更理想為30~80莫耳%。 Moreover, a linear or branched ethylenic monomer may be contained as a monomer component which comprises resin (A). From the viewpoint of solubility and flexibility, the ratio of the vinyl monomer to the whole of the monomer components constituting the resin (A) is preferably 10 to 90 mol %, more preferably 20 to 85 mol %, More preferably, it is 30 to 80 mol%.
另外,樹脂(A),例如,如使由環烯烴系單 體與烯類單體所構成的單體成分進行聚合而成的樹脂般地不具有極性基的樹脂者,係在對高溫下之氣體的產生作抑制上,為理想。 In addition, the resin (A) is, for example, made of a cycloolefin-based mono A resin that does not have a polar group like a resin obtained by polymerizing a monomer component composed of a monomer and an ethylenic monomer is desirable in order to suppress the generation of gas at high temperature.
針對將單體成分進行聚合時之聚合方法或聚合條件等,並無特別限制,只要依照常法進行適當設定即可。 There are no particular limitations on the polymerization method, polymerization conditions, and the like at the time of polymerizing the monomer components, and they may be appropriately set according to conventional methods.
作為可使用作為樹脂(A)的市售品,係可列舉例如:Polyplastics股份有限公司製之「TOPAS」、三井化學股份有限公司製之「APEL」、日本ZEON股份有限公司製之「ZEONOR」及「ZEONEX」、JSR股份有限公司製之「ARTON」等。 Examples of commercially available products that can be used as the resin (A) include "TOPAS" manufactured by Polyplastics Co., Ltd., "APEL" manufactured by Mitsui Chemicals Co., Ltd., "ZEONOR" manufactured by Nippon Zeon Co., Ltd., and "ZEONEX", "ARTON" manufactured by JSR Co., Ltd., etc.
樹脂(A)之玻璃轉移溫度(Tg),較理想為60℃以上,特別理想為70℃以上。若樹脂(A)之玻璃轉移溫度為60℃以上,則可對當層積體暴露於高溫環境中時接著層30之軟化進一步作抑制。
The glass transition temperature (Tg) of the resin (A) is preferably 60°C or higher, particularly preferably 70°C or higher. If the glass transition temperature of the resin (A) is 60° C. or higher, the softening of the
樹脂(B),係選自由萜烯系樹脂、松香系樹脂及石油樹脂所成之群中的至少1種之樹脂。具體而言,作為萜烯系樹脂,係可列舉例如:萜烯樹脂、萜烯酚樹脂、變性萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂等。作為松香系樹脂,係可列舉例如:松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、變性松香等。作為石油樹脂,可列舉例如:脂肪族或芳香族石油樹脂、氫化石油樹脂、變性石油樹脂、脂環族石油樹脂、苯并呋喃-茚石油樹脂等。此等之中,更理想為氫化萜烯樹脂、 氫化石油樹脂。 The resin (B) is at least one resin selected from the group consisting of terpene-based resins, rosin-based resins, and petroleum resins. Specifically, as a terpene resin, a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, a hydrogenated terpene phenol resin, etc. are mentioned, for example. Examples of the rosin-based resin include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of the petroleum resin include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, benzofuran-indene petroleum resins, and the like. Among them, hydrogenated terpene resins, Hydrogenated petroleum resin.
樹脂(B)之軟化點雖無特別限定,但較理想為80~160℃。若樹脂(B)之軟化點為80℃以上,則可對當層積體暴露於高溫環境中時軟化一事作抑制,而不產生接著不良。另一方面,若樹脂(B)之軟化點為160℃以下,則使剝離層積體時之剝離速度成為良好。 The softening point of the resin (B) is not particularly limited, but is preferably 80 to 160°C. If the softening point of the resin (B) is 80° C. or higher, it is possible to suppress the softening of the laminate when exposed to a high-temperature environment, without causing poor adhesion. On the other hand, when the softening point of the resin (B) is 160° C. or lower, the peeling speed at the time of peeling the laminate becomes favorable.
樹脂(B)之重量平均分子量雖無特別限定,但較理想為300~3,000。若樹脂(B)之重量平均分子量為300以上,則耐熱性成為充分者,而於高溫環境下脫氣量變少。另一方面,若樹脂(B)之重量平均分子量為3,000以下,則使剝離層積體時之剝離速度成為良好者。另外,本實施形態中之樹脂(B)之重量平均分子量,係意味著以凝膠滲透層析法(GPC)所測定的聚苯乙烯換算之分子量者。 The weight average molecular weight of the resin (B) is not particularly limited, but is preferably 300 to 3,000. If the weight average molecular weight of the resin (B) is 300 or more, the heat resistance will be sufficient, and the amount of outgassing in a high temperature environment will be reduced. On the other hand, when the weight average molecular weight of resin (B) is 3,000 or less, the peeling speed at the time of peeling a laminated body becomes favorable. In addition, the weight average molecular weight of the resin (B) in this embodiment means the molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
另外,作為樹脂,亦可使用混合有樹脂(A)與樹脂(B)者。藉由混合,而使耐熱性及剝離速度成為良好者。例如,作為樹脂(A)與樹脂(B)之混合比例為(A):(B)=80:20~55:45(質量比)者,係由於剝離速度、高溫環境時之熱耐性、及柔軟性優異,故為理想。 Moreover, what mixed resin (A) and resin (B) can also be used as resin. By mixing, heat resistance and peeling speed can be made good. For example, when the mixing ratio of resin (A) and resin (B) is (A):(B)=80:20~55:45 (mass ratio), it is due to peeling speed, thermal resistance in high temperature environment, and It is ideal because of its excellent flexibility.
作為丙烯酸-苯乙烯系樹脂,係可列舉例如:使用苯乙烯或苯乙烯之衍生物、與(甲基)丙烯酸酯等作為單體進行聚合而成的樹脂。 As acryl-styrene resin, the resin which polymerized using styrene or a styrene derivative, (meth)acrylate, etc. as a monomer is mentioned, for example.
作為(甲基)丙烯酸酯,係可列舉例如:由鏈 式構造所構成的(甲基)丙烯酸烷基酯、具有脂肪族環的(甲基)丙烯酸酯、具有芳香族環的(甲基)丙烯酸酯。作為由鏈式構造所構成的(甲基)丙烯酸烷酯,係可列舉:具有碳數15~20之烷基的丙烯酸系長鏈烷基酯、具有碳數1~14之烷基的丙烯酸系烷基酯等。作為丙烯酸系長鏈烷基酯,係可列舉:烷基為n-十五烷基、n-十六烷基、n-十七烷基、n-十八烷基、n-十九烷基、n-二十烷基等之丙烯酸或甲基丙烯酸之烷基酯。另外,該烷基亦可為分支狀。 As (meth)acrylate, for example: Alkyl (meth)acrylate, (meth)acrylate having an aliphatic ring, and (meth)acrylate having an aromatic ring composed of the formula structure. As the alkyl (meth)acrylate having a chain structure, an acrylic long-chain alkyl ester having an alkyl group having 15 to 20 carbon atoms and an acrylic acid having an alkyl group having 1 to 14 carbon atoms are exemplified. Alkyl esters, etc. Examples of the long-chain acrylic acid-based alkyl ester include n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, and n-nonadecyl , alkyl esters of acrylic acid or methacrylic acid such as n-eicosyl. In addition, the alkyl group may be branched.
作為具有碳數1~14之烷基的丙烯酸系烷基酯,係可列舉:既有的丙烯酸系接著劑中所使用之周知的丙烯酸系烷基酯。可列舉例如:烷基為由甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二烷基、月桂基、十三烷基等所構成的丙烯酸或甲基丙烯酸之烷基酯。 As an acrylic alkyl ester which has a C1-C14 alkyl group, the well-known acrylic alkyl ester used for the existing acrylic adhesive agent is mentioned. For example, the alkyl group is composed of methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, lauryl, tridecyl Alkyl esters of acrylic acid or methacrylic acid, etc.
作為具有脂肪族環的(甲基)丙烯酸酯,係可列舉:環己基(甲基)丙烯酸酯、環戊基(甲基)丙烯酸酯、1-金剛烷基(甲基)丙烯酸酯、降莰基(甲基)丙烯酸酯、異莰基(甲基)丙烯酸酯、三環癸基(甲基)丙烯酸酯、四環十二烷基(甲基)丙烯酸酯、二環戊基(甲基)丙烯酸酯等,但更理想為異莰基甲基丙烯酸酯、二環戊基(甲基)丙烯酸酯。 Examples of the (meth)acrylate having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, norbornyl Alkyl (meth)acrylate, Isobornyl (meth)acrylate, Tricyclodecyl (meth)acrylate, Tetracyclododecyl (meth)acrylate, Dicyclopentyl (meth)acrylate Acrylates, etc., are more preferably isobornyl methacrylate and dicyclopentyl (meth)acrylate.
作為具有芳香族環的(甲基)丙烯酸酯,雖無特別限定,但作為芳香族環,係可列舉例如:苯基、苄基、基、茬基、聯苯基、萘基、蒽基、苯氧甲基、苯氧 乙基等。又,芳香族環,係亦可為具有碳數1~5之鏈狀或分支狀的烷基。具體而言,較理想為苯氧乙基丙烯酸酯。 Although there is no particular limitation on the (meth)acrylate having an aromatic ring, examples of the aromatic ring include a phenyl group, a benzyl group, a group, stubble group, biphenyl group, naphthyl group, anthracenyl group, phenoxymethyl group, phenoxyethyl group, etc. In addition, the aromatic ring may be a chain or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferable.
作為馬來醯亞胺系樹脂,可列舉例如,將作為單體之N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-n-丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-n-丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-sec-丁基馬來醯亞胺、N-tert-丁基馬來醯亞胺、N-n-戊基馬來醯亞胺、N-n-己基馬來醯亞胺、N-n-庚基馬來醯亞胺、N-n-辛基馬來醯亞胺、N-月桂基馬來醯亞胺、N-硬脂基馬來醯亞胺等之具有烷基的馬來醯亞胺、N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等之具有脂肪族烴基的馬來醯亞胺、N-苯基馬來醯亞胺、N-m-甲基苯基馬來醯亞胺、N-o-甲基苯基馬來醯亞胺、N-p-甲基苯基馬來醯亞胺等之具有芳基的芳香族馬來醯亞胺等聚合所得之樹脂。 As the maleimide-based resin, for example, N-methylmaleimide, N-ethylmaleimide, Nn-propylmaleimide, N- Isopropylmaleimide, Nn-butylmaleimide, N-isobutylmaleimide, N-sec-butylmaleimide, N-tert-butylmaleimide Imide, Nn-amylmaleimide, Nn-hexylmaleimide, Nn-heptylmaleimide, Nn-octylmaleimide, N-laurylmaleimide Maleimide having an alkyl group such as imine, N-stearyl maleimide, N-cyclopropyl maleimide, N-cyclobutyl maleimide, N-cyclopropyl maleimide Maleimide having aliphatic hydrocarbon groups such as amylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, etc. Amine, N-phenylmaleimide, Nm-methylphenylmaleimide, No-methylphenylmaleimide, Np-methylphenylmaleimide, etc. Resin obtained by polymerization of aryl aromatic maleimide and the like.
例如,可使用身為以下述之化學式[化10]所表示之重複單元及以下述之化學式[化11]所表示之重複單元的共聚物之環烯烴共聚物作為接著成分之樹脂。 For example, a cycloolefin copolymer, which is a copolymer of a repeating unit represented by the following chemical formula [Chemical 10] and a repeating unit represented by the following chemical formula [Chemical 11], can be used as the resin of the binder component.
(上述之化學式[化11]中,n為0或1~3之整數)。 (In the above chemical formula [Chem. 11], n is 0 or an integer of 1 to 3).
作為此種之環烯烴共聚物,係可使用APL 8008T、APL 8009T、及APL 6013T(均為三井化學股份有限公司製)等。 As such a cycloolefin copolymer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals Co., Ltd.), etc. can be used.
彈性體,較理想係包含苯乙烯單元作為主鏈之構造單元,該「苯乙烯單元」係亦可具有取代基。作為取代基,係可列舉例如:碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧烷基、乙醯氧基、羧基等。又,更理想係該苯乙烯單元之含量為14重量%以上、50重量%以下之範圍內。進而,彈性體,較理想係重量平均分子量為10,000以 上、200,000以下之範圍內。 The elastomer preferably contains a styrene unit as a structural unit of the main chain, and the "styrene unit" may also have a substituent. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an acetoxy group, and a carboxyl group. Moreover, it is more preferable that the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less. Furthermore, the elastomer preferably has a weight average molecular weight of 10,000 or more Above and below 200,000.
由於只要苯乙烯單元之含量為14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則容易溶解於後述之烴系的溶劑中,因此可更容易且迅速地去除第一接著劑層。又,藉由使苯乙烯單元之含量及重量平均分子量為上述之範圍內,而使在晶圓被供以進行抗蝕劑微影工程時所暴露的抗蝕溶劑(例如PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH等)發揮優異的耐性。 As long as the content of styrene units is within the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less, it is easy to dissolve in the hydrocarbon-based solvent described later. The first adhesive layer can be removed more easily and quickly. In addition, by making the content of styrene units and the weight-average molecular weight within the above-mentioned ranges, the resist solvent (such as PGMEA, PGME, etc.) exposed when the wafer is subjected to the resist lithography process, Acids (hydrofluoric acid, etc.) and alkalis (TMAH, etc.) exhibit excellent resistance.
另外,於彈性體中,亦可進一步混合上述之(甲基)丙烯酸酯。 In addition, the above-mentioned (meth)acrylate may be further mixed with the elastomer.
又,苯乙烯單元之含量,更理想為17重量%以上,又,更理想為40重量%以下。 In addition, the content of the styrene unit is more preferably 17% by weight or more, and more preferably 40% by weight or less.
重量平均分子量之更理想的範圍為20,000以上,又,更理想的範圍為150,000以下。 A more desirable range of the weight average molecular weight is 20,000 or more, and a more desirable range is 150,000 or less.
作為彈性體,係只要是苯乙烯單元之含量為14重量%以上、50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上、200,000以下之範圍內,則可使用各種的彈性體。例如,可使用聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、及此等之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯 嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEEPS)、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SeptonV9461(股份有限公司kuraray製))、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性之聚苯乙烯系硬嵌段的SeptonV9827(股份有限公司kuraray製))等,且苯乙烯單元之含量及重量平均分子量為上述之範圍內者。 As the elastomer, various elastomers can be used as long as the content of styrene units is within the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block copolymer can be used Block copolymers (SBS), styrene-butadiene-butylene-styrene block copolymers (SBBS), and their hydrides, styrene-ethylene-butylene-styrene block copolymers (SEBS) ), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer (SEEPS), styrene-ethylene-ethylene-propylene-styrene block with reactive cross-linking type Block copolymer (Septon V9461 (manufactured by Kuraray Co., Ltd.)), styrene-ethylene-butylene-styrene block copolymer (reactive polystyrene-based hard block with reactive cross-linking type) Septon V9827 (manufactured by Kuraray Co., Ltd.), etc., and the content of styrene units and the weight-average molecular weight are within the above-mentioned ranges.
又,彈性體中亦以氫化物為更理想。若為氫化物,則對於熱之安定性會提昇,而不易引起分解或聚合等之變質。又,就對於烴系溶劑之溶解性及對於抗蝕溶劑之耐性的觀點而言,亦更理想。 In addition, hydrides are more preferable among elastomers. If it is a hydride, the thermal stability will be improved, and deterioration such as decomposition or polymerization will not be easily caused. Moreover, it is also more preferable from the viewpoint of the solubility with respect to a hydrocarbon type solvent and the resistance with respect to a resist solvent.
又,彈性體中亦以兩端為苯乙烯之嵌段聚合物者為更理想。其係藉由將熱安定性高的苯乙烯於兩末端嵌段,而顯示更高的耐熱性。 In addition, among the elastomers, a block polymer having both ends of styrene is more preferable. It shows higher heat resistance by blocking styrene with high thermal stability at both ends.
更具體而言,彈性體,係以苯乙烯及共軛二烯之嵌段共聚物之氫化物者為更理想。使對於熱之安定性提昇,而不易引起分解或聚合等之變質。又,藉由使熱安定性高的苯乙烯於兩末端嵌段而顯示更高的耐熱性。進而,就對於烴系溶劑之溶解性及對於抗蝕溶劑之耐性的觀點而言,亦更理想。 More specifically, as the elastomer, a hydrogenated product of a block copolymer of styrene and a conjugated diene is more desirable. It improves the thermal stability, and is not easy to cause deterioration such as decomposition or polymerization. Moreover, higher heat resistance is exhibited by making styrene with high thermal stability block both ends. Furthermore, it is more preferable from the viewpoint of solubility to a hydrocarbon-based solvent and resistance to a resist solvent.
作為可使用作為於構成接著層30之接著劑中所包含的彈性體之市售品,係可列舉例如:股份有限公司kuraray製「Septon(商品名)」、股份有限公司kuraray製「HYBRAR(商品名)」、旭化成股份有限公司製
「Tuftec(商品名)」、JSR股份有限公司製「DYNARON(商品名)」等。
Examples of commercially available products that can be used as the elastomer contained in the adhesive constituting the
作為於構成接著層30之接著劑中所包含的彈性體之含量,例如,係將接著劑組成物全量設為100重量份,而較理想為50重量份以上、99重量份以下之範圍內,更理想為60重量份以上、99重量份以下之範圍內,最理想為70重量份以上、95重量份以下之範圍內。藉由成為該等範圍內,而可一面維持耐熱性,一面將晶圓與支撐體適宜地貼合。
As the content of the elastomer contained in the adhesive constituting the
又,彈性體係亦可將複數種進行混合。也就是說,構成接著層30的接著劑係亦可包含複數種的彈性體。只要複數種的彈性體當中的至少一個為包含有苯乙烯單元作為主鏈之構造單元即可。又,只要複數種的彈性體當中的至少一個,係苯乙烯單元之含量為14重量%以上、50重量%以下之範圍內,或是重量平均分子量為10,000以上、200,000以下之範圍內,則為本發明之範疇。又,於構成接著層30的接著劑中包含複數種的彈性體的情況,亦可以使混合後的結果是苯乙烯單元之含量成為上述之範圍內的方式來進行調整。例如,若將苯乙烯單元之含量為30重量%的股份有限公司kuraray製的Septon(商品名)之Septon4033、與苯乙烯單元之含量為13重量%的Septon(商品名)之Septon2063以重量比1比1進行混合,則苯乙烯含量相對於接著劑中所包含之彈性體全體,係成為21~22重量%,因此成為14重量%以上。又,例如,若將苯乙烯單
元為10重量%者與60重量%者以重量比1比1進行混合,則成為35重量%,而成為上述之範圍內。本發明亦可為此種之形態。又,於構成接著層30之接著劑中所包含的複數種的彈性體,最理想係全部皆以上述之範圍內包含苯乙烯單元,且為上述之範圍內之重量平均分子量。
In addition, the elastic system may be a mixture of two or more. That is, the adhesive system constituting the
另外,較理想係使用光硬化性樹脂(例如,UV硬化性樹脂)以外的樹脂來形成接著層30。藉由使用光硬化性樹脂以外的樹脂,而可防止在接著層30之剝離或去除之後,於被支撐基板的微小凹凸的周邊殘留殘渣。尤其,作為構成接著層30之接著劑,並不是會溶解於所有的溶劑中者,較理想係溶解於特定的溶劑中者。其係因為無須對基板40施加物理性的力,而可藉由使接著層30溶解於溶劑中來去除之故。在接著層30之去除時,甚至連從強度已降低的基板40,也可不讓基板40破損,或變形,而輕易地將接著層30去除。
Moreover, it is preferable to form the
作為形成接著層30(及後述之分離層14)時所使用的稀釋溶劑,係可列舉例如:己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀之烴、碳數4至15之分支狀之烴,例如,環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等之環狀烴、p-薄荷烷、o-薄荷烷、m-薄荷烷、二苯基薄荷烷、1,4-萜二醇、1,8-萜二醇、莰烷、降莰烷、蒎烷、側柏烷、蒈烷、長葉烯、香葉 草醇、橙花醇、沉香醇、檸檬油醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-萜品醇、β-萜品醇、γ-萜品醇、萜品烯-1-醇、萜品烯-4-醇、二氫烯基乙酸酯、1,4-桉油醇、1,8-桉油醇、冰片、香旱芹酮、紫羅酮、側柏酮、樟腦、d-檸檬烯、l-檸檬烯、雙戊烯等之萜烯系溶劑;γ-丁內酯等之內酯類;丙酮、甲基乙基酮、環己酮(CH)、甲基-n-戊基酮、甲基異戊基酮、2-庚酮等之酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等之多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等之具有酯鍵之化合物、前述多元醇類或具有前述酯鍵之化合物的單甲基醚、單乙基醚、單丙基醚、單丁基醚等之單烷基醚或單苯基醚等之具有醚鍵的化合物等之多元醇類之衍生物(此等之中,較理想為丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇單甲基醚(PGME));如二噁烷一般的環式醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、甲氧基丁基乙酸酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲苯酚基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚等之芳香族系有機溶劑等。 Examples of the dilution solvent used in forming the adhesive layer 30 (and the separation layer 14 described later) include hexane, heptane, octane, nonane, methyl octane, decane, undecane, and tenane. Linear hydrocarbons such as dioxane and tridecane, and branched hydrocarbons having 4 to 15 carbon atoms, such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decalin, tetrahydronaphthalene, etc. Cyclic hydrocarbons, p-menthane, o-menthane, m-menthane, diphenylmenthane, 1,4-terpene diol, 1,8-terpene diol, camphene, norbornane, pinane , thubanane, carane, longifolene, geraniol, nerol, linalool, citral, citronellol, menthol, isomenthol, neomenthol, alpha-terpineol, beta -Terpineol, gamma-terpineol, terpinen-1-ol, terpinen-4-ol, dihydro Alkenyl acetate, 1,4-cineole, 1,8-cineole, borneol, eucalyptone, ionone, thujone, camphor, d-limonene, l-limonene, dipentene Terpene solvents such as γ-butyrolactone; Lactones such as γ-butyrolactone; Acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-amyl ketone, methyl isoamyl ketone, 2 - Ketones such as heptanone; polyols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc.; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, Or dipropylene glycol monoacetate and other compounds having ester bonds, monoalkanes such as monomethyl ether, monoethyl ether, monopropyl ether, monobutyl ether, etc. of the aforementioned polyols or compounds having the aforementioned ester bond Derivatives of polyols such as compounds having ether bonds such as phenyl ethers or monophenyl ethers (among them, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) )); cyclic ethers such as dioxane, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methoxybutyl acetate, methyl pyruvate Esters, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, etc.; anisole, ethylbenzyl ether, cresyl methyl ether, diphenyl ether, diphenyl ether Aromatic organic solvents such as benzyl ether, phenethyl ether, butyl phenyl ether, etc.
構成接著層30之接著劑,係亦可在不損害本質性的特性的範圍內,進一步包含具有混合性的其他物質。例如,可進一步使用用以改良接著劑之性能的加成性樹脂、可塑
劑、接著輔助劑、安定劑、著色劑、熱聚合抑制劑及界面活性劑等一般慣用的各種添加劑。
The adhesive constituting the
基板形成工程S03,例如係在接著層形成工程S02之後進行。於基板形成工程S03中,係於分離層20之玻璃支撐體10不存在之側形成具有電子零件41的基板40。也就是說,基板40係被形成於接著層30的基板形成面30f。於基板形成工程S03中,係在基板40的端部40e從分離層20的端部20e分離的狀態下,使基板40形成於接著層30上。於基板形成工程S03中,首先,係如第3圖(B)所示般,於接著層30之基板形成面30f配置複數個電子零件41。電子零件的配置數量為任意。電子零件41,例如,係包含使用半導體等所形成的晶片等。電子零件41,係藉由接著層30而被接著並固定。
The substrate formation process S03 is performed after, for example, the adhesive layer formation process S02. In the substrate formation process S03, the
其後,如第3圖(C)所示般,以覆蓋包含電子零件41之接著層30的基板形成面30f之全面的方式來形成封模42。藉由形成封模42,而使電子零件41以被埋入封模42的狀態作保持。另外,封模42,係可以使電子零件41的一部分(例如上面)露出的方式形成。又,封模42,例如,係使用可讓使分離層20變質的光透過的材料來形成。作為此種材料,係可列舉例如:玻璃、矽、丙烯酸樹脂等。
Then, as shown in FIG.3(C), the sealing
另外,於基板形成工程S03中,亦可不配置電子零件41。在不配置電子零件41的情況,例如,於接著
層30之基板形成面30f上係可僅形成封模42,亦可形成再配線於此封模42的電路。亦即,於所形成的基板40中亦可不包含電子零件41。又,如上述般,由於分離層20的端部從玻璃支撐體10的端部分離,因此於基板形成工程S03之行程中對分離層20從玻璃支撐體10剝離一事作抑制,而可適當進行基板形成工程S03以後的工程。
In addition, in the board formation process S03, the
封模研磨工程S04係在基板形成工程S03之後進行。封模研磨工程S04,係如第4圖(A)所示般,對封模42之玻璃支撐體10不存在之側,也就是封模42的上面42a進行研磨,而使電子零件41露出。藉由封模研磨工程S04,而成為使電子零件41的上面(+Z側之面)與封模42的上面42a成為大致同一面的狀態。於封模研磨工程S04中,例如,係藉由周知的手法對封模進行研磨。另外,於基板形成工程S03中,在封模42被形成為使電子零件41的一部分露出的情況時,可省略封模研磨工程S04。
The mold sealing and polishing process S04 is performed after the substrate forming process S03. As shown in FIG. 4(A), the mold polishing step S04 is to polish the side of the
另外,亦可在封模研磨工程S04之後,於電子零件41及封模42的上面(+Z側之面,或是玻璃支撐體10不存在之側之面)藉由具有導電性的材料而形成配線。又,亦可以與此配線電連接的方式來配置電子零件41,並以覆蓋此電子零件41的方式來形成封模42。配線與電子零件41之連接係使用凸緣、焊接等。如此般,亦可形成將配置有電子零件41的層複數層層積而成的基板40。
In addition, after the mold sealing and polishing process S04, the upper surface of the
分離層變質工程S05係例如在封模研磨工程S04之後進行。於分離層變質工程S05中,係如第4圖(B)所示般,從玻璃支撐體10的分離層20不存在之側,也就是從玻璃支撐體10的底面10r來對於分離層20,從照射裝置IR照射光L或熱。作為光L,係照射可使分離層20變質的波長之光L或熱。藉由分離層變質工程S05,使分離層20變質,而使強度或對玻璃支撐體10之接著力降低。另外,於第4圖(B)中,係使玻璃支撐體10的上下逆轉(將基板40朝下),從上方的照射裝置IR照射光L或熱,但,並不限定於此形態。例如,亦可將基板40朝上,來從玻璃支撐體10的下方,藉由照射裝置IR照射光L或熱。
The separation layer modification process S05 is performed after the mold sealing and polishing process S04, for example. In the separation layer modification process S05, as shown in FIG. 4(B), the
玻璃支撐體剝離工程S06係例如在分離層變質工程S05之後進行。於玻璃支撐體剝離工程S06中,係如第5圖(A)所示般,藉由在將基板40朝下的狀態下將玻璃支撐體10往上方抬起,而破壞分離層20,而將玻璃支撐體10從基板40剝離。將玻璃支撐體10往上方抬起的作業,係亦可使用將玻璃支撐體10吸附來抬起的裝置。此時,基板40,係被吸附於載台等,藉由將玻璃支撐體10抬起,而從玻璃支撐體持10被拉離。藉由玻璃支撐體剝離工程S06,而使包含接著層30及基板40的層積體50從玻璃支撐體10剝離。
The glass support peeling process S06 is performed after the separation layer modification process S05, for example. In the glass support peeling process S06, as shown in FIG. 5(A), by lifting the
另外,如上述般,由於接著層30的端部從分離層20的端部分離,因此防止接著層30附著於玻璃支撐體10,而於玻璃支撐體剝離工程S06中,可將玻璃支撐體10從基板40容易地剝離。
In addition, as described above, since the end of the
接著層去除工程S07係在玻璃支撐體剝離工程S06之後進行。於接著層去除工程S07中,係如第5圖(B)所示般,將不使基板40(配線及封模42)溶解,且使接著層30之接著剤溶解的溶劑供給至接著層30上。藉此,接著劑係藉由溶劑而被溶解,將接著層30從基板40去除,而得到使複數個電子裝置51成為1片板狀的構造體。其後,雖無圖示,但例如,藉由對每個電子零件41進行切割,而得到個別的電子裝置51。另外,切割裝置係可使用任意的裝置。
Next, the layer removal process S07 is performed after the glass support peeling process S06. In the adhesive layer removal step S07, as shown in FIG. 5(B), a solvent for dissolving the adhesive of the
如以上所述般,實施形態之層積體50之製造方法,係製造將矩形狀的玻璃支撐體10與藉由光的吸收或加熱而變質的分離層20層積而成的層積體50之方法,並包含有:分離層形成工程S01,係將分離層20,以使端部20e從玻璃支撐體10的端部10e分離的方式形成於玻璃支撐體10上的中央部分。藉此,由於是在分離層20的端部20e從玻璃支撐體10的端部10e分離的狀態下被形成於玻璃支撐體10上的中央部分,因此藉由使玻璃支撐體10與分離層20之密著性提昇而對分離層20容易被剝離一事作抑制,而可順利地進行上述之基板形成工程S03以後的工程(或是接著
層形成工程S02以後的工程),並可容易地製造層積體50或電子裝置51。
As described above, the method of manufacturing the laminate 50 according to the embodiment is to manufacture the laminate 50 in which the
上述之實施形態,雖列舉下述構成、亦即是藉由於分離層形成工程S01中,調整狹縫噴嘴61的移動範圍及開口部61a的開口寬幅,而設定形成分離層20的範圍之構成為例,來進行說明,但並不限定於此。
In the above-described embodiment, the following configuration is exemplified. That is, the range for forming the
第12圖(A)及(B)係對層積體之製造方法的另一例作展示的工程圖。於分離層形成工程S01中,例如,係如第12圖(A)所示般,預先於玻璃支撐體10的周緣部10g形成遮蔽M,在遮蔽M被形成之後,亦包含遮蔽M上地而於玻璃支撐體10的全面塗佈液狀體Q1。其後,亦可如第12圖(B)所示般,將遮蔽M藉由溶劑等去除。藉由將遮蔽M去除,而將重疊於遮蔽M上所塗佈的液狀體Q1與遮蔽M一起去除。藉此,可將分離層20的端部20e設為從玻璃支撐體10的端部10e分離的狀態。
Fig. 12(A) and (B) are engineering drawings showing another example of the manufacturing method of the laminated body. In the separation layer forming process S01, for example, as shown in FIG. 12(A), a shield M is formed in advance on the
另外,遮蔽M,係可使用能夠藉由溶劑等而去除的任意的材質。又,作為遮蔽M,亦可使用遮蔽膠帶。於此情況中,在遮蔽膠帶被貼於玻璃支撐體10的端部之後,於玻璃支撐體10的全面塗佈液狀體Q1。其後,藉由將遮蔽膠帶剝離,而可將被塗佈於遮蔽膠帶上的液狀體Q1去除。
In addition, as the mask M, any material that can be removed by a solvent or the like can be used. In addition, as the masking M, a masking tape can also be used. In this case, after the masking tape is attached to the end of the
第13圖(A)及(B),係對層積體之製造方法的另一例作展示的圖。於分離層形成工程S01中,例如,係如第13圖(A)所示般,在使玻璃支撐體10於Z軸周圍旋轉的
狀態下,對分離層形成面10f從未圖示的分配器等供給液狀體Q1,而於分離層形成面10f的全面塗佈液狀體Q1來形成分離層20。其後,亦可如第13圖(B)所示般,將於分離層20上被形成於分離層形成面10f的周緣部10g的部分藉由溶劑S1等而去除。藉此,可將分離層20的端部20e設為從玻璃支撐體10的端部10e分離的狀態。
FIG. 13 (A) and (B) are diagrams showing another example of the method of manufacturing the laminate. In the separation layer forming process S01, for example, as shown in FIG. 13(A), the
又,於上述之實施形態中,雖與分離層形成工程S01同樣地,列舉下述構成、亦即是藉由於接著層形成工程S02中,調整狹縫噴嘴62的移動範圍及開口部62a的開口寬幅,而調整接著層30的範圍之構成為例,來進行說明,但並不限定於此。
Furthermore, in the above-described embodiment, the following configuration is exemplified in the same manner as in the separation layer forming process S01, that is, by adjusting the moving range of the
第14圖(A)至(C),係對層積體之製造方法的另一例作展示的工程圖。於接著層形成工程S02中,例如,係如第14圖(A)所示般,於包含分離層20的玻璃支撐體10的分離層形成面10f之全面形成接著層30。接著,如第14圖(B)所示般,將於接著層30上覆蓋有基板40的封模42進行研磨(參照上述之基板形成工程S03及封模研磨工程S04)。接著,如第14圖(C)所示般,使接著層30的周緣部藉由溶劑S2等而溶解。藉此,成為可使分離層20的端部20e露出。另外,於第14圖所示之例中,雖對接著層30的端部30e與分離層20的端部20e一致的情況作展示,但由於分離層20的端部20e露出,因此防止接著層30接著於玻璃支撐體10,而於玻璃支撐體剝離工程S06中,不會成為將玻璃支撐體10剝離時之阻礙。
Fig. 14 (A) to (C) are engineering drawings showing another example of the method of manufacturing the laminate. In the adhesive layer forming process S02, for example, as shown in FIG. 14(A), the
另外,並不限定於如第14圖(C)所示般,使接著層30的端部30e與分離層20的端部20e一致。例如,亦可藉由增加溶劑S2等的供給量或供給時間,而使接著層30進行溶解直到接著層30的端部30e從分離層20的端部20e分離為止。
In addition, as shown in FIG. 14(C), the edge part 30e of the
針對實施形態之層積體製造系統進行說明。第15圖係對層積體製造系統100的一例作示意性展示的方塊圖。如第15圖所示般,層積體製造系統100係包含有:分離層形成裝置90、接著層形成裝置91、基板形成裝置92、封模研磨裝置93、分離層變質裝置94、玻璃支撐體剝離裝置95、以及接著層去除裝置96。
The laminated body manufacturing system of an embodiment is demonstrated. FIG. 15 is a block diagram schematically showing an example of the laminated
分離層形成裝置90,係於玻璃支撐體10上形成分離層20,並執行上述之分離層形成工程S01。接著層形成裝置91,係於分離層20上形成接著層30,並執行上述之接著層形成工程S02。基板形成裝置92,係於接著層30上形成基板40,並執行上述之基板形成工程S03。封模研磨裝置93,係如上述之封模研磨工程S04所示般,對基板40之封模42進行研磨。分離層變質裝置94,係如上述之分離層變質工程S05所示般,對分離層20照射光或熱而使分離層20變質。玻璃支撐體剝離裝置95,係如上述之玻璃支撐體剝離工程S06所示般,將玻璃支撐體10從基板40剝離。接著層去除裝置96,係如上述之接著層去除工程S07
所示般,從基板40將接著層30去除。
The separation
如此般,若依據層積體製造系統100,則可有效率地進行上述之分離層形成工程S01、接著層形成工程S02、基板形成工程S03、封模研磨工程S04、分離層變質工程S05、玻璃支撐體剝離工程S06、及接著層去除工程S07之各工程。
In this way, according to the laminated
對於藉由上述之實施形態的層積體之製造方法而於玻璃支撐體形成分離層的層積體50進行各種的剝離測試。第16圖(A)至(C)係對實施例之剝離測試的結果作展示的表。實施例1、2之層積體50,係對於在使玻璃支撐體10的端部與分離層20的端部分離的狀態下於玻璃支撐體10形成分離層20的層積體50,以400℃之溫度進行硬化處理者。又,比較例1、2之層積體,係對於將分離層形成至玻璃支撐體10的端部的層積體,以400℃之溫度進行硬化處理者。
Various peeling tests were performed about the
第16圖(A)所示之表,係對在將實施例1之層積體50及比較例1之層積體分別浸漬於水中10分鐘之後,朝向玻璃支撐體10與分離層之間來噴射空氣時之結果作展示。如第16圖(A)所示般,於比較例1之層積體中,係可確認到從玻璃支撐體10之分離層之剝離。另一方面,於實施例1之層積體50中,並無確認到從玻璃支撐體10之分離層20之剝離。
The table shown in FIG. 16(A) is a comparison between the
又,第16圖(B)所示之表,係對在對於實施例2之層積體50及比較例2之層積體進行第16圖(A)之測試之後,進一步進行5分鐘的超音波洗淨,其後,朝向玻璃支撐體10與分離層之間來噴射空氣時之結果作展示。如第16圖(B)所示般,於比較例2之層積體中,係可確認到從玻璃支撐體10之分離層之剝離。另一方面,於實施例2之層積體50中,並無確認到從玻璃支撐體10之分離層20之剝離。
In addition, the table shown in FIG. 16(B) is for the
又,第16圖(C)所示之表,係對在對於實施例3之層積體50及比較例3之層積體進行第16圖(B)之測試之後,於各個分離層上貼附膠帶並作了剝離時(剝離測試)之結果作展示。另外,實施例3之層積體50、及比較例3之層積體,係以360℃之溫度進行硬化處理者。如第16圖(C)所示般,於比較例3之層積體中,係藉由剝離測試而可確認到從玻璃支撐體10之分離層之剝離。另一方面,於實施例3之層積體50中,即使在進行了剝離測試的情況中亦無確認到從玻璃支撐體10之分離層20之剝離。
In addition, the table shown in FIG. 16(C) is for the
如此般,於上述之實施例1至3中,係可確認到對於玻璃支撐體10之分離層20的密著度提昇。
In this way, in the above-mentioned Examples 1 to 3, it was confirmed that the adhesion of the
以上,雖針對實施形態及實施例進行說明,但本發明並不限定於上述之說明,在不脫離該發明之要旨的範圍內可作各種變更。 As mentioned above, although embodiment and an Example were demonstrated, this invention is not limited to the above description, Various changes are possible in the range which does not deviate from the summary of this invention.
L1、L2‧‧‧距離 L1, L2‧‧‧distance
M1、M2‧‧‧距離 M1, M2‧‧‧distance
10‧‧‧玻璃支撐體 10‧‧‧Glass Support
10a、10b、10c、10d、20a、20b、20c、20d‧‧‧端邊 10a, 10b, 10c, 10d, 20a, 20b, 20c, 20d‧‧‧End
10e、20e‧‧‧端部 10e, 20e‧‧‧End
10f‧‧‧分離層形成面 10f‧‧‧Separation layer forming surface
20‧‧‧分離層 20‧‧‧Separation layer
20f‧‧‧接著層形成面 20f‧‧‧Adhesion layer forming surface
50‧‧‧層積體 50‧‧‧Laminated body
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JPH078894A (en) * | 1993-06-28 | 1995-01-13 | Toray Ind Inc | Formation of coating film |
JP2005310131A (en) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | Thin semiconductor device, and operation method of thin semiconductor device |
JP2010018505A (en) * | 2008-07-14 | 2010-01-28 | Asahi Glass Co Ltd | Glass laminate, panel for display device with supporting body, panel for display device, display device, and methods for manufacturing them |
JP2015223823A (en) * | 2014-05-30 | 2015-12-14 | 東レ株式会社 | Laminate, method for producing laminate, and method for producing flexible device using the same |
JP2017092138A (en) * | 2015-11-05 | 2017-05-25 | Jsr株式会社 | Method for processing base material, laminate, semiconductor device and manufacturing method thereof, and composition for temporary fixing |
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JP6055354B2 (en) * | 2013-03-28 | 2016-12-27 | 東京応化工業株式会社 | Substrate processing method |
JP6333560B2 (en) * | 2014-01-23 | 2018-05-30 | 旭化成株式会社 | Substrate applied to flexible electronic device having predetermined structure and method for manufacturing the same |
JP2017024368A (en) * | 2015-07-27 | 2017-02-02 | パナソニックIpマネジメント株式会社 | Laminated body and method for manufacturing the same, and electronic device and method for manufacturing the same |
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JPH078894A (en) * | 1993-06-28 | 1995-01-13 | Toray Ind Inc | Formation of coating film |
JP2005310131A (en) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | Thin semiconductor device, and operation method of thin semiconductor device |
JP2010018505A (en) * | 2008-07-14 | 2010-01-28 | Asahi Glass Co Ltd | Glass laminate, panel for display device with supporting body, panel for display device, display device, and methods for manufacturing them |
JP2015223823A (en) * | 2014-05-30 | 2015-12-14 | 東レ株式会社 | Laminate, method for producing laminate, and method for producing flexible device using the same |
JP2017092138A (en) * | 2015-11-05 | 2017-05-25 | Jsr株式会社 | Method for processing base material, laminate, semiconductor device and manufacturing method thereof, and composition for temporary fixing |
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JP2019005999A (en) | 2019-01-17 |
JP6364531B1 (en) | 2018-07-25 |
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