TWI734767B - A sealing body manufacturing method, and a laminate - Google Patents
A sealing body manufacturing method, and a laminate Download PDFInfo
- Publication number
- TWI734767B TWI734767B TW106111190A TW106111190A TWI734767B TW I734767 B TWI734767 B TW I734767B TW 106111190 A TW106111190 A TW 106111190A TW 106111190 A TW106111190 A TW 106111190A TW I734767 B TWI734767 B TW I734767B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- separation layer
- sealing body
- support
- adhesive layer
- Prior art date
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 233
- 238000000926 separation method Methods 0.000 claims abstract description 167
- 239000012790 adhesive layer Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 46
- 230000002093 peripheral effect Effects 0.000 claims abstract description 30
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 239000003566 sealing material Substances 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 5
- 229920005989 resin Polymers 0.000 description 97
- 239000011347 resin Substances 0.000 description 97
- -1 amine compound Chemical class 0.000 description 78
- 239000000126 substance Substances 0.000 description 55
- 239000002904 solvent Substances 0.000 description 50
- 239000000178 monomer Substances 0.000 description 33
- 125000000217 alkyl group Chemical group 0.000 description 27
- 239000000853 adhesive Substances 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 23
- 229920001971 elastomer Polymers 0.000 description 23
- 239000000806 elastomer Substances 0.000 description 23
- 230000001070 adhesive effect Effects 0.000 description 22
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 21
- 125000003118 aryl group Chemical group 0.000 description 21
- 229920000642 polymer Polymers 0.000 description 21
- 238000012545 processing Methods 0.000 description 17
- 125000001424 substituent group Chemical group 0.000 description 17
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 13
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 11
- 150000003505 terpenes Chemical class 0.000 description 11
- 235000007586 terpenes Nutrition 0.000 description 11
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 10
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 10
- 125000001931 aliphatic group Chemical group 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 10
- 150000001925 cycloalkenes Chemical class 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 10
- 150000002148 esters Chemical class 0.000 description 9
- 150000002430 hydrocarbons Chemical class 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000003208 petroleum Substances 0.000 description 9
- 238000005507 spraying Methods 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- 125000003342 alkenyl group Chemical group 0.000 description 8
- 229930195733 hydrocarbon Natural products 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 125000003545 alkoxy group Chemical group 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- LZOZLBFZGFLFBV-UHFFFAOYSA-N sulfene Chemical compound C=S(=O)=O LZOZLBFZGFLFBV-UHFFFAOYSA-N 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 125000005372 silanol group Chemical group 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 229920006132 styrene block copolymer Polymers 0.000 description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011358 absorbing material Substances 0.000 description 5
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 5
- 125000005907 alkyl ester group Chemical group 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XMGQYMWWDOXHJM-JTQLQIEISA-N (+)-α-limonene Chemical compound CC(=C)[C@@H]1CCC(C)=CC1 XMGQYMWWDOXHJM-JTQLQIEISA-N 0.000 description 4
- GLZPCOQZEFWAFX-UHFFFAOYSA-N Geraniol Chemical compound CC(C)=CCCC(C)=CCO GLZPCOQZEFWAFX-UHFFFAOYSA-N 0.000 description 4
- 239000013032 Hydrocarbon resin Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229910003077 Ti−O Chemical group 0.000 description 4
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 4
- BWRHOYDPVJPXMF-UHFFFAOYSA-N carane Chemical compound C1C(C)CCC2C(C)(C)C12 BWRHOYDPVJPXMF-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229920006270 hydrocarbon resin Polymers 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- NOOLISFMXDJSKH-UTLUCORTSA-N (+)-Neomenthol Chemical compound CC(C)[C@@H]1CC[C@@H](C)C[C@@H]1O NOOLISFMXDJSKH-UTLUCORTSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical class C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 229920001400 block copolymer Polymers 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000306 component Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical group C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000002950 monocyclic group Chemical group 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 3
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 3
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- 229920000346 polystyrene-polyisoprene block-polystyrene Polymers 0.000 description 3
- 239000005077 polysulfide Substances 0.000 description 3
- 229920001021 polysulfide Polymers 0.000 description 3
- 150000008117 polysulfides Polymers 0.000 description 3
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical class C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 3
- 239000010979 ruby Substances 0.000 description 3
- 229910001750 ruby Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229940124530 sulfonamide Drugs 0.000 description 3
- 150000003456 sulfonamides Chemical class 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- HNJZOHHIXSIJFG-UHFFFAOYSA-N (2,6-dihydroxy-4-methoxyphenyl)-phenylmethanone Chemical compound OC1=CC(OC)=CC(O)=C1C(=O)C1=CC=CC=C1 HNJZOHHIXSIJFG-UHFFFAOYSA-N 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 2
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- XJWZDXFFNOMMTD-UHFFFAOYSA-N 1-methyl-4-propan-2-ylcyclohex-3-en-1-ol Chemical compound CC(C)C1=CCC(C)(O)CC1 XJWZDXFFNOMMTD-UHFFFAOYSA-N 0.000 description 2
- ZGYHBLSTEXSDOB-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;titanium Chemical compound [Ti].OCCN(CCO)CCO.OCCN(CCO)CCO ZGYHBLSTEXSDOB-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- WRYLYDPHFGVWKC-UHFFFAOYSA-N 4-terpineol Chemical compound CC(C)C1(O)CCC(C)=CC1 WRYLYDPHFGVWKC-UHFFFAOYSA-N 0.000 description 2
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 241000723346 Cinnamomum camphora Species 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- NOOLISFMXDJSKH-UHFFFAOYSA-N DL-menthol Natural products CC(C)C1CCC(C)CC1O NOOLISFMXDJSKH-UHFFFAOYSA-N 0.000 description 2
- WEEGYLXZBRQIMU-UHFFFAOYSA-N Eucalyptol Chemical compound C1CC2CCC1(C)OC2(C)C WEEGYLXZBRQIMU-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910004018 SiF Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 150000004056 anthraquinones Chemical class 0.000 description 2
- DMLAVOWQYNRWNQ-UHFFFAOYSA-N azobenzene Chemical class C1=CC=CC=C1N=NC1=CC=CC=C1 DMLAVOWQYNRWNQ-UHFFFAOYSA-N 0.000 description 2
- RFRXIWQYSOIBDI-UHFFFAOYSA-N benzarone Chemical group CCC=1OC2=CC=CC=C2C=1C(=O)C1=CC=C(O)C=C1 RFRXIWQYSOIBDI-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical group C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229930008380 camphor Natural products 0.000 description 2
- 229960000846 camphor Drugs 0.000 description 2
- 229930006741 carane Natural products 0.000 description 2
- ULDHMXUKGWMISQ-UHFFFAOYSA-N carvone Chemical compound CC(=C)C1CC=C(C)C(=O)C1 ULDHMXUKGWMISQ-UHFFFAOYSA-N 0.000 description 2
- QMVPMAAFGQKVCJ-UHFFFAOYSA-N citronellol Chemical compound OCCC(C)CCC=C(C)C QMVPMAAFGQKVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000006165 cyclic alkyl group Chemical group 0.000 description 2
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Chemical class C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- NNRLDGQZIVUQTE-UHFFFAOYSA-N gamma-Terpineol Chemical compound CC(C)=C1CCC(C)(O)CC1 NNRLDGQZIVUQTE-UHFFFAOYSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- ZUBZATZOEPUUQF-UHFFFAOYSA-N isononane Chemical compound CCCCCCC(C)C ZUBZATZOEPUUQF-UHFFFAOYSA-N 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000002365 multiple layer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229930004008 p-menthane Natural products 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- XOKSLPVRUOBDEW-UHFFFAOYSA-N pinane Chemical compound CC1CCC2C(C)(C)C1C2 XOKSLPVRUOBDEW-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002743 polystyrene-poly(ethylene-ethylene/propylene) block-polystyrene Polymers 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- XBFJAVXCNXDMBH-UHFFFAOYSA-N tetracyclo[6.2.1.1(3,6).0(2,7)]dodec-4-ene Chemical compound C1C(C23)C=CC1C3C1CC2CC1 XBFJAVXCNXDMBH-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 150000003573 thiols Chemical class 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- XMGQYMWWDOXHJM-SNVBAGLBSA-N (-)-α-limonene Chemical compound CC(=C)[C@H]1CCC(C)=CC1 XMGQYMWWDOXHJM-SNVBAGLBSA-N 0.000 description 1
- MFVGRLIGGZNHRJ-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-[4-(dimethylamino)phenyl]methanone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(O)C=C1O MFVGRLIGGZNHRJ-UHFFFAOYSA-N 0.000 description 1
- YYZAKQYFXDJLTA-UHFFFAOYSA-N (2,5-dihydroxyphenyl)-(2,6-dihydroxyphenyl)methanone Chemical compound OC1=CC=C(O)C(C(=O)C=2C(=CC=CC=2O)O)=C1 YYZAKQYFXDJLTA-UHFFFAOYSA-N 0.000 description 1
- RNVADSKAURBXRD-UHFFFAOYSA-N (3,4-dihydroxyphenyl)-[4-(dimethylamino)phenyl]methanone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(O)C(O)=C1 RNVADSKAURBXRD-UHFFFAOYSA-N 0.000 description 1
- RDQHBBCEAXUGGK-UHFFFAOYSA-N (4-aminophenyl)-(2-hydroxyphenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=CC=C1O RDQHBBCEAXUGGK-UHFFFAOYSA-N 0.000 description 1
- ARVUDIQYNJVQIW-UHFFFAOYSA-N (4-dodecoxy-2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC(OCCCCCCCCCCCC)=CC=C1C(=O)C1=CC=CC=C1 ARVUDIQYNJVQIW-UHFFFAOYSA-N 0.000 description 1
- QMVPMAAFGQKVCJ-SNVBAGLBSA-N (R)-(+)-citronellol Natural products OCC[C@H](C)CCC=C(C)C QMVPMAAFGQKVCJ-SNVBAGLBSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- RFFOTVCVTJUTAD-AOOOYVTPSA-N 1,4-cineole Chemical compound CC(C)[C@]12CC[C@](C)(CC1)O2 RFFOTVCVTJUTAD-AOOOYVTPSA-N 0.000 description 1
- NBIYKOUEZOEMMC-UHFFFAOYSA-N 1-(2-methylpropyl)pyrrole-2,5-dione Chemical compound CC(C)CN1C(=O)C=CC1=O NBIYKOUEZOEMMC-UHFFFAOYSA-N 0.000 description 1
- PRZFFHNZHXGTRC-UHFFFAOYSA-N 1-(3-methylphenyl)pyrrole-2,5-dione Chemical compound CC1=CC=CC(N2C(C=CC2=O)=O)=C1 PRZFFHNZHXGTRC-UHFFFAOYSA-N 0.000 description 1
- KCFXNGDHQPMIAQ-UHFFFAOYSA-N 1-(4-methylphenyl)pyrrole-2,5-dione Chemical compound C1=CC(C)=CC=C1N1C(=O)C=CC1=O KCFXNGDHQPMIAQ-UHFFFAOYSA-N 0.000 description 1
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 description 1
- KPAPHODVWOVUJL-UHFFFAOYSA-N 1-benzofuran;1h-indene Chemical compound C1=CC=C2CC=CC2=C1.C1=CC=C2OC=CC2=C1 KPAPHODVWOVUJL-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- JNPCNDJVEUEFBO-UHFFFAOYSA-N 1-butylpyrrole-2,5-dione Chemical compound CCCCN1C(=O)C=CC1=O JNPCNDJVEUEFBO-UHFFFAOYSA-N 0.000 description 1
- YKGDLGZPBRJNDN-UHFFFAOYSA-N 1-cycloheptylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCCC1 YKGDLGZPBRJNDN-UHFFFAOYSA-N 0.000 description 1
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 1
- OCCVUVFZSHLCID-UHFFFAOYSA-N 1-cyclooctylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCCCC1 OCCVUVFZSHLCID-UHFFFAOYSA-N 0.000 description 1
- YEAIIFHWFHOYMQ-UHFFFAOYSA-N 1-cyclopentylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCC1 YEAIIFHWFHOYMQ-UHFFFAOYSA-N 0.000 description 1
- COEKMFUFXAWJGI-UHFFFAOYSA-N 1-heptylpyrrole-2,5-dione Chemical compound CCCCCCCN1C(=O)C=CC1=O COEKMFUFXAWJGI-UHFFFAOYSA-N 0.000 description 1
- FBPVUBVZRPURIU-UHFFFAOYSA-N 1-hexylpyrrole-2,5-dione Chemical compound CCCCCCN1C(=O)C=CC1=O FBPVUBVZRPURIU-UHFFFAOYSA-N 0.000 description 1
- UMWPTXOKSJXVDS-UHFFFAOYSA-N 1-methyl-2-propan-2-ylcyclohexane Chemical compound CC(C)C1CCCCC1C UMWPTXOKSJXVDS-UHFFFAOYSA-N 0.000 description 1
- KIKBJYQCJJXCBZ-UHFFFAOYSA-N 1-octylpyrrole-2,5-dione Chemical compound CCCCCCCCN1C(=O)C=CC1=O KIKBJYQCJJXCBZ-UHFFFAOYSA-N 0.000 description 1
- CZUQOPAKOZMIPQ-UHFFFAOYSA-N 1-pentylpyrrole-2,5-dione Chemical compound CCCCCN1C(=O)C=CC1=O CZUQOPAKOZMIPQ-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- NQDOCLXQTQYUDH-UHFFFAOYSA-N 1-propan-2-ylpyrrole-2,5-dione Chemical compound CC(C)N1C(=O)C=CC1=O NQDOCLXQTQYUDH-UHFFFAOYSA-N 0.000 description 1
- DABFKTHTXOELJF-UHFFFAOYSA-N 1-propylpyrrole-2,5-dione Chemical compound CCCN1C(=O)C=CC1=O DABFKTHTXOELJF-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- MEZZCSHVIGVWFI-UHFFFAOYSA-N 2,2'-Dihydroxy-4-methoxybenzophenone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1O MEZZCSHVIGVWFI-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- ZXDDPOHVAMWLBH-UHFFFAOYSA-N 2,4-Dihydroxybenzophenone Chemical group OC1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 ZXDDPOHVAMWLBH-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- XXXFZKQPYACQLD-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl acetate Chemical compound CC(=O)OCCOCCO XXXFZKQPYACQLD-UHFFFAOYSA-N 0.000 description 1
- AMOYMEBHYUTMKJ-UHFFFAOYSA-N 2-(2-phenylethoxy)ethylbenzene Chemical compound C=1C=CC=CC=1CCOCCC1=CC=CC=C1 AMOYMEBHYUTMKJ-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- XHGZCXPDKIEKNY-UHFFFAOYSA-N 2-chlorobenzene-1,3,5-triol Chemical compound OC1=CC(O)=C(Cl)C(O)=C1 XHGZCXPDKIEKNY-UHFFFAOYSA-N 0.000 description 1
- KTXWGMUMDPYXNN-UHFFFAOYSA-N 2-ethylhexan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCCC(CC)C[O-].CCCCC(CC)C[O-].CCCCC(CC)C[O-].CCCCC(CC)C[O-] KTXWGMUMDPYXNN-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- PPPFYBPQAPISCT-UHFFFAOYSA-N 2-hydroxypropyl acetate Chemical compound CC(O)COC(C)=O PPPFYBPQAPISCT-UHFFFAOYSA-N 0.000 description 1
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- DXIJHCSGLOHNES-UHFFFAOYSA-N 3,3-dimethylbut-1-enylbenzene Chemical compound CC(C)(C)C=CC1=CC=CC=C1 DXIJHCSGLOHNES-UHFFFAOYSA-N 0.000 description 1
- USICVVZOKTZACS-UHFFFAOYSA-N 3-butylpyrrole-2,5-dione Chemical compound CCCCC1=CC(=O)NC1=O USICVVZOKTZACS-UHFFFAOYSA-N 0.000 description 1
- 125000004208 3-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C([H])C(*)=C1[H] 0.000 description 1
- MDXKEHHAIMNCSW-UHFFFAOYSA-N 3-propylpyrrole-2,5-dione Chemical compound CCCC1=CC(=O)NC1=O MDXKEHHAIMNCSW-UHFFFAOYSA-N 0.000 description 1
- USMNOWBWPHYOEA-UHFFFAOYSA-N 3‐isothujone Chemical compound CC1C(=O)CC2(C(C)C)C1C2 USMNOWBWPHYOEA-UHFFFAOYSA-N 0.000 description 1
- WEMYXYMZQRSPIA-UHFFFAOYSA-N 4-(2,4-dihydroxyphenyl)sulfanylbenzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1SC1=CC=C(O)C=C1O WEMYXYMZQRSPIA-UHFFFAOYSA-N 0.000 description 1
- WRYLYDPHFGVWKC-SNVBAGLBSA-N 4-Terpineol Natural products CC(C)[C@]1(O)CCC(C)=CC1 WRYLYDPHFGVWKC-SNVBAGLBSA-N 0.000 description 1
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- AXPZDYVDTMMLNB-UHFFFAOYSA-N Benzyl ethyl ether Chemical compound CCOCC1=CC=CC=C1 AXPZDYVDTMMLNB-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- PEEISUYOQGKHJZ-UHFFFAOYSA-N C(CCC)OC(=O)C1=C(CO[Ti](OCCCC)(OCCCC)OCCCC)C=CC=C1 Chemical compound C(CCC)OC(=O)C1=C(CO[Ti](OCCCC)(OCCCC)OCCCC)C=CC=C1 PEEISUYOQGKHJZ-UHFFFAOYSA-N 0.000 description 1
- HMMVFZQRTCPWEI-UHFFFAOYSA-N C(CCCCCCC)(O)O.CC([O-])C.[Ti+4].CC([O-])C.CC([O-])C.CC([O-])C Chemical compound C(CCCCCCC)(O)O.CC([O-])C.[Ti+4].CC([O-])C.CC([O-])C.CC([O-])C HMMVFZQRTCPWEI-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- YJEKXZSNECAUHP-UHFFFAOYSA-N CC(=O)CC(=O)C[Ti]CC(=O)CC(C)=O Chemical compound CC(=O)CC(=O)C[Ti]CC(=O)CC(C)=O YJEKXZSNECAUHP-UHFFFAOYSA-N 0.000 description 1
- KPWIZLJDXFLIAL-UHFFFAOYSA-L CC(C)O[Ti++]OC(C)C.CC(C)CCCCCCCCCCCCCCC([O-])=O.CC(C)CCCCCCCCCCCCCCC([O-])=O Chemical compound CC(C)O[Ti++]OC(C)C.CC(C)CCCCCCCCCCCCCCC([O-])=O.CC(C)CCCCCCCCCCCCCCC([O-])=O KPWIZLJDXFLIAL-UHFFFAOYSA-L 0.000 description 1
- 239000005973 Carvone Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WTEVQBCEXWBHNA-UHFFFAOYSA-N Citral Natural products CC(C)=CCCC(C)=CC=O WTEVQBCEXWBHNA-UHFFFAOYSA-N 0.000 description 1
- KCADUUDDTBWILK-UHFFFAOYSA-N Cumulene Natural products CCCC=C=C=C1OC(=O)C=C1 KCADUUDDTBWILK-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- GLZPCOQZEFWAFX-YFHOEESVSA-N Geraniol Natural products CC(C)=CCC\C(C)=C/CO GLZPCOQZEFWAFX-YFHOEESVSA-N 0.000 description 1
- 239000005792 Geraniol Substances 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- NOOLISFMXDJSKH-LPEHRKFASA-N Isomenthol Natural products CC(C)[C@@H]1CC[C@H](C)C[C@H]1O NOOLISFMXDJSKH-LPEHRKFASA-N 0.000 description 1
- GHAZCVNUKKZTLG-UHFFFAOYSA-N N-ethyl-succinimide Natural products CCN1C(=O)CCC1=O GHAZCVNUKKZTLG-UHFFFAOYSA-N 0.000 description 1
- HDFGOPSGAURCEO-UHFFFAOYSA-N N-ethylmaleimide Chemical compound CCN1C(=O)C=CC1=O HDFGOPSGAURCEO-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- GLZPCOQZEFWAFX-JXMROGBWSA-N Nerol Natural products CC(C)=CCC\C(C)=C\CO GLZPCOQZEFWAFX-JXMROGBWSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- YDEBACUTRAGDCD-UHFFFAOYSA-N S(=O)(OC1=C(C(=CC(=C1)Cl)O)O)OC1=C(C(=CC(=C1)Cl)O)O Chemical compound S(=O)(OC1=C(C(=CC(=C1)Cl)O)O)OC1=C(C(=CC(=C1)Cl)O)O YDEBACUTRAGDCD-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical group [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- ASWNLXMNKUUJTD-UHFFFAOYSA-N [4-(diethylamino)phenyl]-(2-hydroxyphenyl)methanone Chemical compound C1=CC(N(CC)CC)=CC=C1C(=O)C1=CC=CC=C1O ASWNLXMNKUUJTD-UHFFFAOYSA-N 0.000 description 1
- QUROTZSERBHYTP-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-(2-hydroxy-4-methoxyphenyl)methanone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 QUROTZSERBHYTP-UHFFFAOYSA-N 0.000 description 1
- ZXALUOPYEJPVTG-UHFFFAOYSA-N [4-(dimethylamino)phenyl]-(2-hydroxyphenyl)methanone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=CC=C1O ZXALUOPYEJPVTG-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- IPTNXMGXEGQYSY-UHFFFAOYSA-N acetic acid;1-methoxybutan-1-ol Chemical compound CC(O)=O.CCCC(O)OC IPTNXMGXEGQYSY-UHFFFAOYSA-N 0.000 description 1
- XRLHGXGMYJNYCR-UHFFFAOYSA-N acetic acid;2-(2-hydroxypropoxy)propan-1-ol Chemical compound CC(O)=O.CC(O)COC(C)CO XRLHGXGMYJNYCR-UHFFFAOYSA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001251 acridines Chemical class 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000004653 anthracenylene group Chemical group 0.000 description 1
- 101150059062 apln gene Proteins 0.000 description 1
- 150000003934 aromatic aldehydes Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000002635 aromatic organic solvent Substances 0.000 description 1
- 125000001769 aryl amino group Chemical group 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000001555 benzenes Chemical group 0.000 description 1
- JGQFVRIQXUFPAH-UHFFFAOYSA-N beta-citronellol Natural products OCCC(C)CCCC(C)=C JGQFVRIQXUFPAH-UHFFFAOYSA-N 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- SODJJEXAWOSSON-UHFFFAOYSA-N bis(2-hydroxy-4-methoxyphenyl)methanone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=C(OC)C=C1O SODJJEXAWOSSON-UHFFFAOYSA-N 0.000 description 1
- BEWYHVAWEKZDPP-UHFFFAOYSA-N bornane Chemical compound C1CC2(C)CCC1C2(C)C BEWYHVAWEKZDPP-UHFFFAOYSA-N 0.000 description 1
- 229930006742 bornane Natural products 0.000 description 1
- YFNONBGXNFCTMM-UHFFFAOYSA-N butoxybenzene Chemical compound CCCCOC1=CC=CC=C1 YFNONBGXNFCTMM-UHFFFAOYSA-N 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- RFFOTVCVTJUTAD-UHFFFAOYSA-N cineole Natural products C1CC2(C)CCC1(C(C)C)O2 RFFOTVCVTJUTAD-UHFFFAOYSA-N 0.000 description 1
- 229940043350 citral Drugs 0.000 description 1
- 235000000484 citronellol Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000003997 cyclic ketones Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- MAWOHFOSAIXURX-UHFFFAOYSA-N cyclopentylcyclopentane Chemical group C1CCCC1C1CCCC1 MAWOHFOSAIXURX-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HBGGXOJOCNVPFY-UHFFFAOYSA-N diisononyl phthalate Chemical compound CC(C)CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCC(C)C HBGGXOJOCNVPFY-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical group C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- QRMFTQURPRSBFM-UHFFFAOYSA-N ethyl 3-ethoxy-2-oxopropanoate Chemical compound CCOCC(=O)C(=O)OCC QRMFTQURPRSBFM-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- MDQRDWAGHRLBPA-UHFFFAOYSA-N fluoroamine Chemical class FN MDQRDWAGHRLBPA-UHFFFAOYSA-N 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N fluoroketone group Chemical group FC(=O)F IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- WTEVQBCEXWBHNA-JXMROGBWSA-N geranial Chemical compound CC(C)=CCC\C(C)=C\C=O WTEVQBCEXWBHNA-JXMROGBWSA-N 0.000 description 1
- 229940113087 geraniol Drugs 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- UCQHUEOREKHIBP-UHFFFAOYSA-N heptacyclo[9.6.1.14,7.113,16.02,10.03,8.012,17]icosa-5,14-diene Chemical compound C1C(C23)C4C(C=C5)CC5C4C1C3CC1C2C2C=CC1C2 UCQHUEOREKHIBP-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229930002839 ionone Natural products 0.000 description 1
- 150000002499 ionone derivatives Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- LZCLXQDLBQLTDK-UHFFFAOYSA-N lactic acid ethyl ester Natural products CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229940041616 menthol Drugs 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- ZFHKOSKYJHKEAP-UHFFFAOYSA-N methyl 3-methoxy-2-oxopropanoate Chemical compound COCC(=O)C(=O)OC ZFHKOSKYJHKEAP-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- SEEYREPSKCQBBF-UHFFFAOYSA-N n-methylmaleimide Chemical compound CN1C(=O)C=CC1=O SEEYREPSKCQBBF-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- SFDJOSRHYKHMOK-UHFFFAOYSA-N nitramide Chemical class N[N+]([O-])=O SFDJOSRHYKHMOK-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 150000004005 nitrosamines Chemical class 0.000 description 1
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- QUAMTGJKVDWJEQ-UHFFFAOYSA-N octabenzone Chemical compound OC1=CC(OCCCCCCCC)=CC=C1C(=O)C1=CC=CC=C1 QUAMTGJKVDWJEQ-UHFFFAOYSA-N 0.000 description 1
- MCCIMQKMMBVWHO-UHFFFAOYSA-N octadecanoic acid;titanium Chemical compound [Ti].CCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O MCCIMQKMMBVWHO-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004043 oxo group Chemical group O=* 0.000 description 1
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229930006728 pinane Natural products 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002742 polystyrene-block-poly(ethylene/propylene) -block-polystyrene Polymers 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- RBNWAMSGVWEHFP-WAAGHKOSSA-N terpin Chemical compound CC(C)(O)[C@H]1CC[C@@](C)(O)CC1 RBNWAMSGVWEHFP-WAAGHKOSSA-N 0.000 description 1
- 229950010257 terpin Drugs 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 description 1
- XDLNRRRJZOJTRW-UHFFFAOYSA-N thiohypochlorous acid Chemical compound ClS XDLNRRRJZOJTRW-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229930007110 thujone Natural products 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02379—Fan-out arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本發明提供一種於支撐體上形成密封體時,可防止設於支撐體之分離層剝落之密封體之製造方法及層合體。 The present invention provides a method for manufacturing a sealing body and a laminated body that can prevent the separation layer provided on the support body from peeling off when the sealing body is formed on the support body.
密封體之製造方法包含:於支撐體(1)之一側的平面部(1a)上形成藉由照射光而變質之分離層(2)之步驟,與去除形成於支撐體(1)之周緣部分(1b)全周之分離層(2)之步驟,與於支撐體(1)之去除周緣部分(1b)全周之分離層側的面上形成接著層(3)之步驟,及於接著層(3)上形成密封體(7)之步驟。 The manufacturing method of the sealing body includes the steps of forming a separation layer (2) on the flat portion (1a) on one side of the support body (1) that is altered by irradiating light, and removing the peripheral edge formed on the support body (1) Part (1b) the step of separating the whole circumference of the layer (2), and the step of forming the adhesive layer (3) on the surface of the supporting body (1) on the side of the separating layer of the whole circumference of the part (1b), and then The step of forming a sealing body (7) on the layer (3).
Description
本發明有關密封體之製造方法及層合體。 The present invention relates to a manufacturing method of a sealed body and a laminated body.
近幾年來,為了實現半導體裝置之積體化或小型化等,而開發扇出型WLP(Fan-Out Wafer Level Package,扇出晶圓級封裝)技術。作為扇出型WLP技術已知有(i)暫時於支撐體上形成以樹脂密封複數晶片之樹脂晶圓(擬似晶圓)後,自樹脂晶圓去除支撐體,隨後,對樹脂晶圓形成配線層而形成密封體之方法(專利文獻1~3),與(ii)於支撐體上形成配線層及樹脂晶圓後,去除支撐體而形成密封體之方法(非專利文獻1),基於可高密度配線之觀點,後者較受到矚目。
In recent years, in order to achieve integration or miniaturization of semiconductor devices, fan-out WLP (Fan-Out Wafer Level Package) technology has been developed. Known as fan-out WLP technology is (i) temporarily forming a resin wafer (pseudo-wafer) in which plural chips are sealed with resin on a support body, then removing the support body from the resin wafer, and then forming wiring on the resin wafer The method of forming a sealed body by layer (
[專利文獻1]日本特開2012-248598號公報(2012年12 月13日公開) [Patent Document 1] JP 2012-248598 A (December 2012) (Open on 13th)
[專利文獻2]日本特開2012-60100號公報(2012年3月22日公開) [Patent Document 2] JP 2012-60100 A (published on March 22, 2012)
[專利文獻3]日本特開2013-168594號公報(2013年8月29日公開) [Patent Document 3] JP 2013-168594 A (published on August 29, 2013)
[非專利文獻1]栗田洋一郎,“藉由FO-WLP之新製程RDL-first法開發實現高信賴.高密度配線之超小型封裝”,[線上]RENESAS EDGE,[2016年(平成28年)1月6日檢索],網際網路<URL:http://japan.renesas.com/media/edge_ol/r_and_d/01/r70pf0030jj0101_edge.pdf> [Non-Patent Document 1] Kurita Yoichiro, "Development of the new FO-WLP process RDL-first method to achieve high-reliability, high-density wiring ultra-small package", [online] RENESAS EDGE, [2016 (Heisei 28) Retrieved on January 6], Internet <URL: http://japan.renesas.com/media/edge_ol/r_and_d/01/r70pf0030jj0101_edge.pdf>
本發明人等,基於獨自之見解,於扇出型WLP技術中,作為使支撐體以期望之時點去除之結構,探討預先於支撐體上設置藉由照射光而變質之分離層。其結果發現,如非專利文獻1般於支撐體上形成密封體(配線層及樹脂晶圓)之方法中,由於於支撐體上進行用以形成配線層之處理(例如微影處理等),故因該處理之影響(例如處理所用之藥液等之影響),可能產生設於支撐體之分離層剝離之問題。
Based on their own knowledge, the inventors of the present invention, as a structure for removing the support at a desired time point in the fan-out WLP technology, studied the provision of a separation layer that is degraded by irradiation with light in advance on the support. As a result, it was found that in the method of forming a sealing body (wiring layer and resin wafer) on the support as in Non-Patent
本發明係鑑於前述問題點而完成者,主要目 的在於提供一種於支撐體上形成密封體時,可防止設於支撐體之分離層剝落之密封體之製造方法及層合體。 The present invention was completed in view of the aforementioned problems, and its main purpose The purpose of the invention is to provide a method for manufacturing a sealing body and a laminated body that can prevent the separation layer provided on the support body from peeling off when the sealing body is formed on the support body.
為了解決上述課題,本發明之密封體之製造方法係製造具備配線層、與安裝於上述配線層之元件、及密封上述元件之密封材的密封體之製造方法,其特徵為包含於光透過之支撐體之一側的平面部上形成藉由照射光而變質之分離層之分離層形成步驟,去除形成於上述支撐體之周緣部分全周之分離層之分離層周緣部分去除步驟,於上述支撐體之去除周緣部分全周之分離層側的面上形成接著層之接著層形成步驟,及於上述接著層上形成上述密封體之密封體形成步驟。 In order to solve the above-mentioned problems, the manufacturing method of the sealing body of the present invention is a method of manufacturing a sealing body including a wiring layer, an element mounted on the wiring layer, and a sealing material that seals the element, and is characterized by being included in the light-transmitting The step of forming a separation layer in which a separation layer that is degraded by irradiation with light is formed on the flat portion on one side of the support, and the step of removing the separation layer peripheral edge portion of the separation layer formed on the entire circumference of the support body, in the support An adhesive layer forming step in which an adhesive layer is formed on the surface of the separation layer side of the entire periphery of the body where the peripheral portion is removed, and a sealing body forming step in which the sealing body is formed on the adhesive layer.
又,本發明之層合體之特徵係依序層合光可透過之支撐體,藉由照射光而變質之分離層,接著層,及密封體,上述密封體具備配線層、安裝於上述配線層之元件、及密封上述元件之密封材,上述分離層中,除與上述支撐體接觸之部分以外,為藉由上述接著層被覆。 In addition, the laminated body of the present invention is characterized by sequentially laminating a light-transmissive support, a separation layer that is deteriorated by irradiating light, an adhesive layer, and a sealing body. The sealing body is provided with a wiring layer and is mounted on the wiring layer. In the element and the sealing material for sealing the element, in the separation layer, except for the part in contact with the support, it is covered by the adhesive layer.
依據本發明,可提供一種於支撐體上形成密封體時,可防止設於支撐體之分離層剝落之密封體之製造方法及層合體。 According to the present invention, it is possible to provide a method for manufacturing a sealing body and a laminated body that can prevent the separation layer provided on the support body from peeling off when the sealing body is formed on the support body.
1‧‧‧支撐體 1‧‧‧Support
1a‧‧‧平面部 1a‧‧‧Plane
1b‧‧‧周緣部分 1b‧‧‧peripheral part
2‧‧‧分離層 2‧‧‧Separation layer
2a‧‧‧外周端部 2a‧‧‧peripheral end
3‧‧‧接著層 3‧‧‧Next layer
4‧‧‧配線層 4‧‧‧Wiring layer
5‧‧‧元件 5‧‧‧Component
6‧‧‧密封材 6‧‧‧Sealing material
7‧‧‧密封體 7‧‧‧Sealing body
8、9‧‧‧層合體 8,9‧‧‧Laminated body
圖1係顯示本發明實施形態1之密封體之製造方法之各步驟的圖。 Fig. 1 is a diagram showing the steps of the manufacturing method of the sealing body according to the first embodiment of the present invention.
圖2係顯示本發明實施形態2之密封體之製造方法之各步驟的圖。 Fig. 2 is a diagram showing each step of the manufacturing method of the sealing body according to the second embodiment of the present invention.
本發明之密封體之製造方法係製造具備配線層、安裝於上述配線層之元件、及密封上述元件之密封材的密封體之製造方法,其包含於光透過之支撐體之一側的平面部上形成藉由照射光而變質之分離層之分離層形成步驟,去除形成於上述支撐體之周緣部分全周之分離層之分離層周緣部分去除步驟,於上述支撐體之去除周緣部分全周之分離層側的面上形成接著層之接著層形成步驟,及於上述接著層上形成上述密封體之密封體形成步驟。 The manufacturing method of the sealing body of the present invention is a manufacturing method of a sealing body including a wiring layer, an element mounted on the wiring layer, and a sealing material for sealing the element, which includes a flat portion on one side of a light-transmitting support A separation layer forming step of forming a separation layer that is degraded by irradiating light, and a separation layer peripheral portion removal step of removing the separation layer formed on the entire circumference of the support body, in the removal of the entire circumference of the support body An adhesive layer forming step of forming an adhesive layer on the surface of the separation layer, and a sealing body forming step of forming the sealing body on the adhesive layer.
依據上述構成,去除形成於支撐體之周緣部分全周之分離層後,藉由於支撐體之去除周緣部分全周之 分離層側的面上形成接著層,而可藉由接著層保護分離層。藉此,於密封體形成步驟中,可防止分離層因藥液等之浸蝕而使支撐體剝落。 According to the above configuration, after removing the separation layer formed on the entire circumference of the support body, the support body is removed from the entire circumference of the An adhesive layer is formed on the surface on the side of the separation layer, and the separation layer can be protected by the adhesive layer. Thereby, in the sealing body forming step, the separation layer can be prevented from peeling off the support body due to the erosion of the chemical liquid or the like.
圖1係顯示本發明一實施形態(實施形態1)之密封體之製造方法之各步驟的圖。實施形態1之密封體之製造方法係依序實施分離層形成步驟、分離層周緣部分去除步驟、接著層形成步驟、密封體形成步驟、接著層去除步驟、光照射步驟、分離步驟及去除步驟。 Fig. 1 is a diagram showing each step of a method of manufacturing a sealing body according to an embodiment (Embodiment 1) of the present invention. The manufacturing method of the sealing body of the first embodiment sequentially performs the separation layer forming step, the separation layer peripheral part removal step, the subsequent layer forming step, the sealing body forming step, the subsequent layer removal step, the light irradiation step, the separation step, and the removal step.
(分離層形成步驟) (Separation layer formation step)
如圖1之(a)所示,於分離層形成步驟中,於光可透過之支撐體1之一側平面部1a上,藉由例如化學氣相成長(CVD)法等,形成藉由照射光而變質之分離層2。又,所謂「一側平面部」係指支撐體1所具有之平面部中之一。又,「平面部」亦可具有實質上看起來為平面之程度的微細凹凸。支撐體1與分離層2之細節及分離層2之形成順序細節將於後述。
As shown in Figure 1(a), in the step of forming the separation layer, on one side
(分離層周緣部分去除步驟) (Removal of the peripheral edge of the separation layer)
如圖1之(b)所示,於分離層周緣部分去除步驟,例如藉由EBR(Edge Bead Removal,邊緣球狀物移除)處理,而將形成於支撐體1之周緣部分1b全周之分離層2去除。周緣
部分1b係平面部1a之周緣部分。藉此,如圖1之(b)所示,平面部1a上,成為於由分離層2經去除之周緣部分1b所包圍之部分,形成有分離層2之狀態。關於EBR處理之細節將於後述。
As shown in Figure 1(b), in the step of removing the peripheral portion of the separation layer, for example, by EBR (Edge Bead Removal, edge ball removal) processing, the
(接著層形成步驟) (Next layer formation step)
如圖1之(c)所示,接著層形成步驟中,於支撐體1之去除周緣部分1b全周之分離層2側的面上形成接著層3。接著層3可藉由例如旋轉塗佈、浸漬、輥刀、噴霧塗佈、狹縫塗佈等方法塗佈接著劑而形成。藉此,由於在包圍分離層2之周緣部分1b及分離層2之上部形成接著層3,故成為分離層2由接著層3覆蓋之狀態。藉此,可保護分離層2。用以形成接著層3之接著劑之細節將於後述。
As shown in FIG. 1(c), in the adhesive layer forming step, the
(密封體形成步驟) (Steps of forming a sealing body)
如圖1之(d)~(g)所示,於密封體形成步驟中,於接著層3上形成密封體7。本實施形態中,於密封體形成步驟,依序進行配線層形成步驟、安裝步驟,密封步驟及薄化步驟。
As shown in (d) to (g) of FIG. 1, in the sealing body forming step, a sealing
如圖1之(d)所示,於配線層形成步驟,於接著層3上形成配線層4。
As shown in FIG. 1(d), the
一實施形態中,作為形成配線層4之順序,首先於接著層3上形成氧化矽(SiOx)、感光性樹脂等之介電體層。由氧化矽所成之介電體層可藉由例如濺鍍法、真空蒸
鍍法等形成。由感光性樹脂所成之介電體層可藉由例如旋轉塗佈、浸漬、輥刀、噴霧塗佈、狹縫塗佈等方法塗佈感光性樹脂而形成。
In one embodiment, as a procedure for forming the
接著,於介電體層上,藉由金屬等之導電體形成配線。作為配線之形成方法可使用例如光微影(阻劑微影)等之微影處理、蝕刻處理等之習知半導體製程方法。 Next, on the dielectric layer, wiring is formed with a conductor such as metal. As the wiring formation method, for example, photolithography (resist lithography) and other conventional semiconductor manufacturing methods such as lithography processing and etching processing can be used.
如圖1之(e)所示,安裝步驟中,於配線層4上安裝元件5。元件5對配線層4之安裝可使用例如晶片安裝器等進行。
As shown in Fig. 1(e), the
如圖1之(f)所示,於密封步驟,藉由密封材6密封元件5。密封材6可使用例如成型模射出成型,亦可藉由旋轉塗佈、浸漬、輥刀、噴霧塗佈、狹縫塗佈等方法塗佈。
As shown in FIG. 1(f), in the sealing step, the
如圖1之(g)所示,於薄化步驟,將密封材6薄化。密封材6亦可薄化至例如與元件5同等厚度。
As shown in Fig. 1(g), in the thinning step, the sealing
由以上,可於支撐體1上順利良好地形成密封體7。此時,例如用以形成配線之微影處理、蝕刻處理等中可使用藥液。由於分離層2多對於藥液耐性不足,故分離層2與藥液接觸時,有使分離層2剝落之虞。因此,依據本實施形態,由於分離層2由接著層3保護,故可避免藥液接觸到分離層2。且藉由接著層3保護分離層2,亦可保護分離層2免受藥液以外之影響。藉此,於密封體形成步驟中,可防止分離層2剝落。再者,依據接著層3,例如於配
線層形成步驟中,用以構成配線層4之氧化膜或金屬層等即使附著於支撐體1之端部附近時,亦可藉由去除接著層3而可容易地自支撐體1去除該氧化膜或金屬層等,尤其不需要洗淨即可再利用支撐體1。
As described above, the sealing
且,由以上步驟所得之圖1之(g)所示之層合體8係依序層合光可透過之支撐體1、藉由照射光而變質之分離層2、接著層3、密封體7而成,且密封體7具備配線層4、安裝於配線層4之元件5、密封元件5之密封材6,分離層2除與支撐體1接觸之部分以外由接著層3所被覆者。此層合體8係僅於本發明之密封體之製造方法之過程中製造者,而可較好地利用於用以製造單離之密封體7。
In addition, the
(接著層去除步驟) (Following the layer removal step)
如圖1之(h)所示,接著層去除步驟中,例如藉由EBR處理而去除形成於支撐體1之周緣部分1b全周上之接著層3。關於EBR處理之細節將於後述。接著層3中,形成於支撐體1之周緣部分1b全周之部分,由於未透過分離層2,而使支撐體1與密封體7接著,故藉由預先去除該部分,於使分離層2變質時,可順利地分離支撐體1與密封體7。
As shown in FIG. 1(h), in the adhesive layer removal step, the
尤其,藉由預先去除較形成於支撐體1上之分離層2之外周端部2a更外側所形成之接著層3,由於支撐體1與密封體7可成為必定透過分離層2而接著之狀態,故使分離層2變質時,可更順利地分離支撐體1與密封體7。
In particular, by removing in advance the
(光照射步驟) (Light irradiation step)
如圖1之(i)所示,於光照射步驟中,透過支撐體1對分離層2照射光L,而使分離層2變質。照射之光L的種類及波長係根據支撐體1之透過性及分離層2之材質適當選擇即可,例如可使用YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光,或非雷射光。藉此,使分離層2變質,可使支撐體1與密封體7成為容易分離之狀態。
As shown in FIG. 1(i), in the light irradiation step, the
又,作為照射雷射光時之雷射光照射條件之一例可舉例以下條件,但未限定於此:雷射光之平均輸出值較好為1.0W以上5.0W以下,更好為3.0W以上4.0W以下;雷射光重複頻率較好為20kHz以上60kHz以下,更好為30kHz以上50kHz以下;雷射光之掃描速度較好為100mm/s以上10000mm/s以下。 Also, as an example of the laser light irradiation conditions when irradiating the laser light, the following conditions can be exemplified, but are not limited to this: The average output value of the laser light is preferably 1.0W or more and 5.0W or less, more preferably 3.0W or more and 4.0W or less The repetition frequency of the laser light is preferably above 20 kHz and below 60 kHz, more preferably above 30 kHz and below 50 kHz; the scanning speed of the laser light is preferably above 100 mm/s and below 10,000 mm/s.
(分離步驟) (Separation step)
如圖1之(j)所示,於分離步驟,使支撐體1與密封體7分離。例如藉由施加使支撐體1與密封體7相互遠離之方向之力,而使支撐體1與密封體7分離。例如於將支撐體1及密封體7之一者固定於台上之狀態,藉由具備真空墊(bellows pad)等之吸附墊之分離板吸附保持另一者並同時拉起,可使支撐體1與密封體7分離。
As shown in FIG. 1(j), in the separation step, the
(去除步驟) (Removal step)
如圖1之(k)所示,於去除步驟,去除殘留於經分離支撐體1後之密封體7上之接著層3與分離層2。例如進行藉由含有機溶劑之洗淨液等去除接著層3及分離層2之殘渣之洗淨步驟。作為洗淨液可使用例如後述之接著劑之稀釋溶劑、顯示鹼性之溶劑(尤其胺系化合物)等,但不限於此。
As shown in FIG. 1(k), in the removal step, the
由以上,可獲得單離之密封體7。
From the above, a single-separated
又,再者,亦可對密封體7進行焊球形成、切割處理等之處理。且於密封體7上亦可層合其他元件。
Furthermore, the sealing
又,於接著劑去除步驟(參考圖1之(h))中,為了較好地去除接著層3之外周部(分離層2之外側),密封體7之外徑較好小於支撐體1之外徑。因此,例如(i)藉由使密封體7之成形用模之外徑小於支撐體,而成形比支撐體外徑小之密封體7,或(ii)於密封體7成形後,為了使其比支撐體外徑小,較好對密封體7進行全切修整。
In addition, in the adhesive removal step (refer to FIG. 1(h)), in order to better remove the outer periphery of the adhesive layer 3 (outside the separation layer 2), the outer diameter of the sealing
[EBR處理] [EBR processing]
一實施形態中,於(A)分離層周緣部分去除步驟中,用以去除形成於支撐體1之周緣部分1b全周之分離層2之EBR處理及(B)接著層去除步驟中,用以去除形成於支撐體1之周緣部分1b全周之接著層3之EBR處理舉例為例如(i)藉由溶劑溶解去除之方法,(ii)使用切割器或刀片等物理性切斷而去除之方法,(iii)藉由於大氣壓下之灰化而去除
之方法等。其中,基於強度及實用性之觀點,較好為藉由溶劑去除之方法。
In one embodiment, in the (A) separation layer peripheral portion removal step, the EBR process to remove the
作為藉由溶劑去除之方法中所用之溶劑若為可溶解成為去除對象之分離層2或接著層3者,則未特別限定,本領域技術人員可根據去除對象之組成適當選擇。例如對於使用烴系之接著劑形成之接著層3,可使用對-薄荷烷及d-檸檬烯等萜烯系溶劑作為溶劑,對於丙烯酸系或馬來醯亞胺系之接著劑形成之接著層3,可使用丙二醇單甲醚乙酸酯、環己酮、2-庚酮、乙酸乙酯及甲基乙基酮等作為溶劑。
The solvent used in the method of solvent removal is not particularly limited as long as it can dissolve the
且,對於分離層2,可使用例如顯示鹼性之溶劑,尤其可使用胺系化合物,可使用自一級、二級、三級之脂肪族胺、脂環式胺、芳香族胺或雜環式胺所成之群選擇之至少1種化合物,該等有機胺類之化合物中,尤其較好地使用單乙醇胺、2-(2-胺基乙氧基)乙醇及2-乙胺基乙醇、2-甲胺基乙醇(MAE)等之烷醇胺。且,剝離液亦可將上述胺系化合物與其他溶劑混合使用,亦可混合使用後述之(稀釋溶劑)欄中記載之溶劑。
Moreover, for the
作為供給溶劑之方法舉例為例如藉由噴出溶劑而對去除對象供給溶劑之方法,將去除對象浸漬於溶劑中之方法。 As a method of supplying the solvent, for example, a method of supplying the solvent to the removal target by spraying the solvent, and a method of immersing the removal target in the solvent.
藉由溶劑之噴出而對去除對象供給溶劑之方法,為了均一供給溶劑,較好為邊使支撐體1旋轉邊對去除對象供給溶劑之方法。作為邊使支撐體1旋轉邊供給溶
劑之方法,舉例為例如將噴出溶劑之噴嘴配置於支撐體1之周緣部分1b之外側附近之正上方,邊使溶劑滴下於支撐體1之周緣部分1b之外側附近,邊使用旋轉器使支撐體1旋轉之方法。藉此,可將溶劑供給至支撐體1之周緣部分1b之全周外側附近。又,配置之噴嘴數並未限制,若為1個以上即可。
In the method of supplying the solvent to the removal target by spraying the solvent, in order to uniformly supply the solvent, a method of supplying the solvent to the removal target while rotating the
伴有支撐體1旋轉及溶劑噴出之上述方法,支撐體1之旋轉速度、自噴嘴供給溶劑時之溶劑流量、及溶劑之供給時間可能根據去除對象之組成、去除對象之厚度、使用之溶劑種類及去除程度而異,但若為本領域技術人員,可毫無困難地檢討及決定其最適條件。
With the above method of supporting
又,藉由溶劑溶解去除對象後,較好使支撐體1等乾燥。藉由經過乾燥步驟,可將不要之溶劑、浸入至非去除對象部分之分離層2或接著層3之溶劑去除。
In addition, it is preferable to dry the
作為乾燥方法,舉例有使用旋轉器等使支撐體1旋轉而甩掉乾燥、利用N2氣體等之噴霧之吹風機之乾燥、利用烘烤之乾燥及利用減壓之乾燥等。又,作為該等乾燥方法可單獨使用任一方法,或可組合使用任意之2種以上方法的方法之任一者。
Examples of the drying method include drying by rotating the
如上述,密封體7具備配線層4、安裝於配線層4之元件5、密封元件5之密封材6。一實施形態中,密封體7具備複數元件5,此種密封體7藉由切割,可獲得複數之電子零
件。
As described above, the sealing
元件5係半導體元件或其他元件,可具有單層或複數層構造。又,元件5為半導體元件時,藉由切割密封體7所得之電子零件成為半導體裝置。
配線層4亦稱為RDL(Redistribution Layer:再配線層),係構成連接於元件5之配線之薄膜配線體,可具有單層或複數層構造。一實施形態中,配線層4可為於介電體(例如氧化矽(SiOx)、感光性環氧樹脂等之感光性樹脂等)中藉由導電體(例如鋁、銅、鈦、鎳、金等之金屬等)形成配線而成者,但不限定於此。
The
作為密封材6,可使用例如環氧系樹脂、矽系樹脂等。一實施形態中,密封材6並非對於每個元件5設置者,而是將安裝於配線層4之複數元件5全部一體密封者。
As the sealing
[支撐體1] [Support 1]
一實施形態中,支撐體1只要具有用以於密封體7形成時防止密封體7之各構成要素之破損或變形之必要強度即可。且只要為可使用以使分離層2變質之光透過者即可。
In one embodiment, the
作為支撐體1之材料,可使用例如玻璃、矽、丙烯酸系樹脂等,但不限於此。作為支撐體1之形狀,可使用例如圓形之板狀者,但不限定於此。
As the material of the
[接著層3] [Next layer 3]
一實施形態中,接著層3係用以將密封體7固定於支撐
體1上者,並且用以保護分離層2者。
In one embodiment, the
接著層3之厚度,只要根據支撐體1及密封體7之種類、密封體形成步驟中實施之處理等適當設定即可,但較好為10~150μm之範圍內,更好為15~100μm之範圍內。
The thickness of the
作為形成接著層3之接著劑可使用例如丙烯酸系、酚醛清漆系、萘醌系、烴系、聚醯亞胺系、彈性體、聚碸系等之該領域中習知之各種接著劑。
As the adhesive for forming the
作為接著劑所含有之樹脂亦即接著層3含有之樹脂若為具備接著性者即可,可更好地使用例如烴樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂、聚碸系樹脂等,或該等之組合等。以下針對接著層3含有之樹脂組成加以說明。
As the resin contained in the adhesive, that is, the resin contained in the
(烴樹脂) (Hydrocarbon resin)
烴樹脂係具有烴骨架且使單體組成物聚合而成之樹脂。作為烴樹脂舉例為環烯烴系聚合物(以下有時稱為「樹脂(A)」)以及由萜烯樹脂、松香系樹脂及石油樹脂所成之群選擇之至少一種樹脂(以下有時稱為「樹脂(B)」)等,但不限於此。 The hydrocarbon resin is a resin having a hydrocarbon skeleton and polymerizing a monomer composition. Examples of hydrocarbon resins include cycloolefin-based polymers (hereinafter sometimes referred to as "resin (A)") and at least one resin selected from the group consisting of terpene resins, rosin-based resins, and petroleum resins (hereinafter sometimes referred to as "Resin (B)") etc., but not limited to this.
樹脂(A)可為使含環烯烴系單體之單體成分聚合而成之樹脂。具體而言,舉例為含環烯烴系單體之單體成分之開環(共)聚合物、使含環烯烴系單體之單體成分加成(共)聚合而成之樹脂等。 The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin-based monomer. Specifically, examples are ring-opening (co)polymers containing monomer components of cycloolefin-based monomers, resins obtained by addition (co)polymerization of monomer components containing cycloolefin-based monomers, and the like.
作為構成樹脂(A)之單體成分中所含之前述環烯烴系單體,舉例為例如降冰片烯、降冰片二烯等之二環體、二環戊二烯、羥基二環戊二烯等之三環體、四環十二碳烯等之四環體、環戊二烯三聚物等之五環體、四環戊二烯等之七環體、或該等多環體之烷基(甲基、乙基、丙基、丁基等)取代體、烯基(乙烯基等)取代體、亞烷基(亞乙基等)取代體、芳基(苯基、甲苯基、萘基等)取代體等。該等中,特佳為自降冰片烯、四環十二碳烯或該等之烷基取代體所成之群選出之降冰片烯系單體。 As the aforementioned cycloolefin-based monomer contained in the monomer component of the resin (A), for example, bicyclic body such as norbornene, norbornadiene, dicyclopentadiene, hydroxydicyclopentadiene The tricyclic ring such as tetracyclododecene, the pentacyclic ring such as cyclopentadiene trimer, the heptacyclic ring such as tetracyclopentadiene, or the alkane of such polycyclic ring Group (methyl, ethyl, propyl, butyl, etc.) substituents, alkenyl (vinyl, etc.) substituents, alkylene (ethylene, etc.) substituents, aryl (phenyl, tolyl, naphthalene, etc.) Group, etc.) Substituted body and the like. Among these, particularly preferred is a norbornene-based monomer selected from the group consisting of norbornene, tetracyclododecene, or these alkyl substituted compounds.
構成樹脂(A)之單體成分亦可含有可與上述環烯烴系單體共聚合之其他單體,例如較好含有烯單體。作為烯單體舉例為例如乙烯、丙烯、1-丁烯、異丁烯、1-己烯、α-烯烴等。作為烯單體可為直鏈狀,亦可為分支鏈狀。 The monomer component constituting the resin (A) may also contain other monomers copolymerizable with the above-mentioned cycloolefin-based monomer, and for example, it is preferable to contain an olefin monomer. Examples of olefin monomers include ethylene, propylene, 1-butene, isobutylene, 1-hexene, and α-olefins. The ethylenic monomer may be linear or branched.
作為構成樹脂(A)之單體成分,基於高耐熱性(低熱分解、熱重量減少性)之觀點,較好含有環烯烴單體。環烯烴單體相對於構成樹脂(A)之單體成分全體之比例較好為5莫耳%以上,更好為10莫耳%以上,又更好為20莫耳%以上。且環烯烴單體相對於構成樹脂(A)之單體成分全體之比例並未特別限定,基於溶解性及溶液之經時安定性之觀點較好為80莫耳%以下,更好為70莫耳%以下。 As a monomer component constituting the resin (A), it is preferable to contain a cycloolefin monomer from the viewpoint of high heat resistance (low thermal decomposition, thermal weight reduction). The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is preferably at least 5 mol%, more preferably at least 10 mol%, and still more preferably at least 20 mol%. The ratio of the cycloolefin monomer to the total monomer components constituting the resin (A) is not particularly limited. From the viewpoint of solubility and stability of the solution with time, it is preferably 80 mol% or less, more preferably 70 mol%. Less than ear%.
又,作為構成樹脂(A)之單體成分亦可含有直鏈狀或分支鏈狀之烯單體。烯單體相對於構成樹脂(A)之單體成分全體之比例,基於溶解性及柔軟性之觀點,較好 為10~90莫耳%,更好為20~85莫耳%,又更好為30~80莫耳%。 Furthermore, as a monomer component constituting the resin (A), a linear or branched ethylenic monomer may be contained. The ratio of the alkene monomer to the total monomer components constituting the resin (A) is preferable from the viewpoint of solubility and flexibility It is 10 to 90 mol%, more preferably 20 to 85 mol%, and still more preferably 30 to 80 mol%.
又,樹脂(A)為例如如使環烯烴系單體與烯單體所成之單體成分聚合而成之樹脂般之不具有極性基之樹脂時,基於抑制高溫下之氣體發生而言較佳。 In addition, when the resin (A) is a resin that does not have a polar group, such as a resin formed by polymerizing a monomer component of a cycloolefin-based monomer and an alkene monomer, it is more effective in terms of suppressing gas generation at high temperatures. good.
單體成分聚合時之聚合方法或聚合條件等並未特別限定,只要依據常用方法適當設定即可。 The polymerization method, polymerization conditions, and the like at the time of polymerization of the monomer components are not particularly limited, as long as they are appropriately set according to common methods.
例如可使用以下述化學式(1)表示之重複單位及下述化學式(2)表示之重複單位之共聚物的環烯烴共聚物作為接著成分之樹脂(A)。 For example, a cyclic olefin copolymer which is a copolymer of a repeating unit represented by the following chemical formula (1) and a repeating unit represented by the following chemical formula (2) can be used as the resin (A) of the subsequent component.
作為此種環烯烴共聚物,可使用APL 8008T、APL 8009T及APL 6013T(均為三井化學股份有限公司製)等。 As such a cycloolefin copolymer, APL 8008T, APL 8009T, APL 6013T (all manufactured by Mitsui Chemicals Co., Ltd.), etc. can be used.
且可作為樹脂(A)使用之市售品舉例為例如PolyPlastic股份有限公司製之「TOPAS」、三井化學股份有限公司製之「APEL」、日本ZEON股份有限公司製之 「ZEONOR」及「ZEONEX」、JSR股份有限公司製之「ARTON」等。 And examples of commercially available products that can be used as resin (A) are, for example, "TOPAS" made by PolyPlastic Co., Ltd., "APEL" made by Mitsui Chemicals Co., Ltd., and one made by ZEON Co., Ltd. "ZEONOR" and "ZEONEX", "ARTON" manufactured by JSR Corporation, etc.
樹脂(A)之玻璃轉移溫度(Tg)較好為60℃以上,特佳為70℃以上。樹脂(A)之玻璃轉移溫度為60℃以上時,可進一步抑制暴露於高溫環境時之接著層3之軟化。
The glass transition temperature (Tg) of the resin (A) is preferably at least 60°C, particularly preferably at least 70°C. When the glass transition temperature of the resin (A) is above 60°C, the softening of the
樹脂(B)係由萜烯系樹脂、松香系樹脂及石油樹脂所成之群選出之至少一種樹脂。具體而言,作為萜烯系樹脂舉例為例如萜烯樹脂、萜烯酚樹脂、改性萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂等。作為松香系樹脂舉例為例如松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、改性松香等。作為石油樹脂舉例為例如脂肪族或芳香族石油樹脂、氫化石油樹脂、改性石油樹脂、脂環族石油樹脂、苯并呋喃-茚石油樹脂等。該等中,更佳為氫化萜烯樹脂、氫化石油樹脂。 The resin (B) is at least one resin selected from the group consisting of terpene-based resins, rosin-based resins, and petroleum resins. Specifically, examples of terpene-based resins include terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, hydrogenated terpene phenol resins, and the like. Examples of rosin-based resins include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of petroleum resins include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, coumarone-indene petroleum resins, and the like. Among these, hydrogenated terpene resin and hydrogenated petroleum resin are more preferable.
樹脂(B)之軟化點並未特別限定,但較好為80~160℃。樹脂(B)之軟化點為80~160℃時,可抑制暴露於高溫環境時的軟化,不會產生接著不良。 The softening point of the resin (B) is not particularly limited, but it is preferably from 80 to 160°C. When the softening point of the resin (B) is 80 to 160°C, the softening when exposed to a high-temperature environment can be suppressed, and adhesion failures will not occur.
樹脂(B)之重量平均分子量並未特別限定,但較好為300~3,000。樹脂(B)之重量平均分子量為300以上時,成為耐熱性充分者,於高溫環境下之脫氣量變少。另一方面,樹脂(B)之重量平均分子量為3,000以下時,成為接著層3於烴系溶劑中之溶解速度良好者。因此,分離支撐體1後之密封體7上之接著層3之殘渣可迅速溶解並去除。又,本實施形態之樹脂(B)之重量平均分子量意指藉
由凝膠滲透層析(GPC)測定之聚苯乙烯換算之分子量。
The weight average molecular weight of the resin (B) is not particularly limited, but it is preferably from 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, the heat resistance is sufficient, and the amount of outgassing in a high-temperature environment decreases. On the other hand, when the weight average molecular weight of the resin (B) is 3,000 or less, the dissolution rate of the
又,作為樹脂,可使用使樹脂(A)與樹脂(B)混合者。藉由混合而成為耐熱性良好者。例如作為樹脂(A)與樹脂(B)之混合比例,為(A):(B)=80:20~55:45(質量比)時,高溫環境時之耐熱性及柔軟性優異故較佳。 Moreover, as resin, what mixed resin (A) and resin (B) can be used. By mixing, it becomes one with good heat resistance. For example, when the mixing ratio of resin (A) and resin (B) is (A): (B)=80:20~55:45 (mass ratio), the heat resistance and flexibility under high temperature environment are excellent, so it is better .
(丙烯酸-苯乙烯系樹脂) (Acrylic-styrene resin)
作為丙烯酸-苯乙烯系樹脂舉例為例如使用苯乙烯或苯乙烯之衍生物與(甲基)丙烯酸酯等作為單體而聚合之樹脂。 As the acrylic-styrene resin, for example, a resin polymerized using styrene or a derivative of styrene and (meth)acrylate or the like as monomers.
作為(甲基)丙烯酸酯舉例為例如由鏈式構造所成之(甲基)丙烯酸烷酯、具有脂肪族環之(甲基)丙烯酸酯、具有芳香族環之(甲基)丙烯酸酯。作為由鏈式構造所成之(甲基)丙烯酸烷酯舉例為具有碳數15~20之烷基之丙烯酸系長鏈烷酯、具有碳數1~14之烷基之丙烯酸系烷酯等。作為丙烯酸系長鏈烷酯舉例為:烷基為正十五烷基、正十六烷基、正十七烷基、正十八烷基、正十九烷基、正二十烷基等之丙烯酸或甲基丙烯酸之烷酯。又,該烷基可為分支鏈狀。 Examples of (meth)acrylates include alkyl (meth)acrylates having a chain structure, (meth)acrylates having an aliphatic ring, and (meth)acrylates having an aromatic ring. Examples of (meth)acrylic acid alkyl esters formed by a chain structure include long-chain acrylic acid-based alkyl esters having an alkyl group having 15 to 20 carbon atoms, and acrylic acid-based alkyl esters having an alkyl group having 1 to 14 carbon atoms. Examples of long-chain acrylic acid-based alkyl esters are: alkyl group is one of n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecyl, n-eicosyl, etc. Alkyl ester of acrylic acid or methacrylic acid. In addition, the alkyl group may be branched.
作為具有碳數1~14之烷基之丙烯酸系烷酯,舉例為既有丙烯酸系接著劑所用之習知丙烯酸系烷酯。舉例為例如烷基為甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二烷基、月桂基、十三烷基等所成之丙烯酸或甲基丙烯酸之烷酯。 As the alkyl acrylate having an alkyl group having 1 to 14 carbon atoms, a conventional acrylate alkyl ester used in an existing acrylic adhesive is exemplified. For example, the alkyl group is methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isononyl, isodecyl, dodecyl, lauryl, tridecyl, etc. It is an alkyl ester of acrylic acid or methacrylic acid.
作為具有脂肪族環之(甲基)丙烯酸酯舉例為(甲基)丙烯酸環己酯、(甲基)丙烯酸環戊酯、(甲基)丙烯酸1-金剛烷酯、(甲基)丙烯酸降冰片酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸三環癸酯、(甲基)丙烯酸四環十二烷酯、(甲基)丙烯酸二環戊烷酯等,但更好為甲基丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯。 Examples of (meth)acrylates having an aliphatic ring are cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, norbornyl (meth)acrylate Ester, isobornyl (meth)acrylate, tricyclodecyl (meth)acrylate, tetracyclododecyl (meth)acrylate, dicyclopentane (meth)acrylate, etc., but more preferably methyl Isobornyl acrylate, dicyclopentyl (meth)acrylate.
作為具有芳香族環之(甲基)丙烯酸酯並未特別限定,但作為芳香族環舉例為例如苯基、苄基、甲苯基、二甲苯基、聯苯基、萘基、蒽基、苯氧基甲基、苯氧基乙基等。且芳香族環亦可具有碳數1~5之直鏈狀或分支鏈狀之烷基。具體而言較好為丙烯酸苯氧基乙酯。 The (meth)acrylate having an aromatic ring is not particularly limited, but examples of the aromatic ring include phenyl, benzyl, tolyl, xylyl, biphenyl, naphthyl, anthryl, and phenoxy. Benzylmethyl, phenoxyethyl, etc. In addition, the aromatic ring may have a linear or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.
(馬來醯亞胺系樹脂) (Maleimide resin)
作為馬來醯亞胺系樹脂舉例為例如使作為單體之N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-正丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-正丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-第二丁基馬來醯亞胺、N-第三丁基馬來醯亞胺、N-正戊基馬來醯亞胺、N-正己基馬來醯亞胺、N-正庚基馬來醯亞胺、N-正辛基馬來醯亞胺、N-月桂基馬來醯亞胺、N-硬脂基馬來醯亞胺等之具有烷基之馬來醯亞胺、N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等之具有脂肪族烴基之馬來醯亞胺,N-苯基馬來醯亞胺、N-間-甲基苯基馬來醯亞胺、N- 鄰-甲基苯基馬來醯亞胺、N-對-甲基苯基馬來醯亞胺等之具有芳基之芳香族馬來醯亞胺等聚合而得之樹脂。 Examples of maleimide resins include, for example, N-methylmaleimide, N-ethylmaleimide, N-n-propylmaleimide, and N-isopropylmaleimide as monomers. Propyl maleimide, N-n-butyl maleimide, N-isobutyl maleimide, N-second butyl maleimide, N-tertiary butyl maleimide N-pentylmaleimide, N-pentylmaleimide, N-hexylmaleimide, N-heptylmaleimide, N-octylmaleimide, N-laurel Maleimines having alkyl groups such as N-stearyl maleimines, N-stearyl maleimines, N-cyclopropyl maleimines, N-cyclobutyl maleimines , N-cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide, etc. which have aliphatic hydrocarbon groups Maleimide, N-phenylmaleimide, N-m-methylphenylmaleimide, N- O-Methylphenylmaleimide, N-p-methylphenylmaleimide, and other aromatic maleimide resins with aromatic groups.
(彈性體) (Elastomer)
彈性體較好含有苯乙烯單位作為主鏈之構成單位,該「苯乙烯單位」亦可具有取代基。作為取代基舉例為例如碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧基烷基、乙醯氧基、羧基等。且,該苯乙烯單位之含量更好為14重量%以上50重量%以下之範圍內。再者,彈性體較好重量平均分子量為10,000以上,200,000以下之範圍內。 The elastomer preferably contains a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent. Examples of the substituent include, for example, an alkyl group having 1 to 5 carbons, an alkoxy group having 1 to 5 carbons, an alkoxyalkyl group having 1 to 5 carbons, an acetoxy group, and a carboxyl group. Furthermore, the content of the styrene unit is more preferably within the range of 14% by weight or more and 50% by weight or less. Furthermore, the elastomer preferably has a weight average molecular weight of 10,000 or more and 200,000 or less.
若苯乙烯單位之含量為14重量%以上,50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上,200,000以下之範圍內,則由於容易溶解於後述之烴系溶劑,故可更容易且迅速地去除接著層3。且,藉由使苯乙烯單位之含量及重量平均分子量在上述範圍內,而發揮對於阻劑微影所用之阻劑溶劑(例如PGMEA、PGME等)、酸(氫氟酸等)、鹼(TMAH等)之優異耐性。
If the content of the styrene unit is within the range of 14% by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is within the range of 10,000 or more and 200,000 or less, it is easy to dissolve in the hydrocarbon solvent described later, so it can be more The
又彈性體中亦可進而混合上述(甲基)丙烯酸酯。 In addition, the above-mentioned (meth)acrylate may be further mixed with the elastomer.
苯乙烯單位之含量更好為17重量%以上,且更好為40重量%以下。 The content of the styrene unit is more preferably 17% by weight or more, and more preferably 40% by weight or less.
重量平均分子量之更佳範圍為20,000以上,且更佳之範圍為150,000以下。 A more preferable range of the weight average molecular weight is 20,000 or more, and a more preferable range is 150,000 or less.
若作為彈性體可使用苯乙烯單位之含量為14 重量%以上,50重量%以下之範圍內,彈性體之重量平均分子量為10,000以上,200,000以下之範圍內,則可使用各種彈性體。舉例為例如聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、及該等之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEEPS)、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SeptonV9461(KURARAY股份有限公司製)、SeptonV9475(KURARAY股份有限公司製))、苯乙烯嵌段為反應交聯型之苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性之聚苯乙烯系硬嵌段之SeptonV9827(KURARAY股份有限公司製))、聚苯乙烯-聚(乙烯-乙烯/丙烯)嵌段-聚苯乙烯嵌段共聚物(SEEPS-OH:末端羥基改性)等,可使用彈性體之苯乙烯單位含量及重量平均分子量在上述範圍內者。 If used as an elastomer, the content of styrene units is 14 Various elastomers can be used within the range of weight% or more and 50 weight% or less, and the weight average molecular weight of the elastomer is 10,000 or more and 200,000 or less. Examples are, for example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene block Copolymer (SBS), styrene-butadiene-butylene-styrene block copolymer (SBBS), and their hydrogenated products, styrene-ethylene-butylene-styrene block copolymer (SEBS) , Styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymer ( SEEPS), styrene-ethylene-ethylene-propylene-styrene block copolymers (Septon V9461 (manufactured by KURARAY Co., Ltd.), Septon V9475 (manufactured by KURARAY Co., Ltd.)) whose styrene block is a reactive cross-linked type, styrene The block is a reactive cross-linked styrene-ethylene-butylene-styrene block copolymer (a reactive polystyrene hard block Septon V9827 (manufactured by KURARAY Co., Ltd.)), polystyrene-poly (Ethylene-ethylene/propylene) block-polystyrene block copolymer (SEEPS-OH: terminal hydroxyl modification), etc., can use elastomers whose styrene unit content and weight average molecular weight are within the above-mentioned ranges.
且彈性體中更好為氫化物。若為氫化物則對於熱之安定性提高,不易引起分解或聚合等之變質。又,基於對烴系溶劑之溶解性及對阻劑溶劑之耐性之觀點,亦更佳。 In addition, the elastomer is more preferably a hydride. If it is a hydride, the stability to heat is improved, and it is unlikely to cause deterioration such as decomposition or polymerization. In addition, it is also preferable from the viewpoint of solubility to hydrocarbon solvents and resistance to resist solvents.
又,彈性體中,更好為兩端為苯乙烯之嵌段聚合物。理由為藉由於兩末端封端熱安定性高的苯乙烯而 顯示更高之耐熱性。 In addition, among the elastomers, a block polymer having styrene at both ends is more preferable. The reason is that due to the high thermal stability of styrene which is blocked at both ends Shows higher heat resistance.
更具體而言,彈性體更好為苯乙烯及共軛二烯之嵌段共聚物之氫化物。對熱之安定性提高,不易引起分解或聚合等之變質。又,藉由於兩末端封端熱安定性高的苯乙烯而顯示更高之耐熱性。再者,基於對烴系溶劑之溶解性及對阻劑溶劑之耐性之觀點,亦更佳。 More specifically, the elastomer is more preferably a hydrogenated product of a block copolymer of styrene and conjugated diene. The stability to heat is improved, and it is not easy to cause deterioration such as decomposition or polymerization. In addition, styrene, which has high thermal stability due to the end-capping of both ends, exhibits higher heat resistance. Furthermore, it is better based on the viewpoints of solubility to hydrocarbon solvents and resistance to resist solvents.
可使用作為構成接著層3之接著劑中所含之彈性體之市售品舉例為例如KURARAY股份有限公司製之「Septon(商品名)」、KURARAY股份有限公司製之「Hybler(商品名)」、旭化成股份有限公司製之「Tuftec(商品名)」、JSR股份有限公司製之「Dynaron(商品名)」等。
Examples of commercially available products that can be used as the elastomer contained in the adhesive constituting the
作為構成接著層3之接著劑中所含之彈性體含量,例如將接著劑組成物總量設為100重量份時,較好為50重量份以上、99重量份以下之範圍內,更好為60重量份以上、99重量份以下之範圍內,最好為70重量份以上、95重量份以下之範圍內。藉由落於該等範圍內,可維持耐熱性同時將密封體7較好地固定於支撐體1。
As the content of the elastomer contained in the adhesive constituting the
又彈性體亦可混合複數種類。亦即,構成接著層3之接著劑亦可含有複數種類之彈性體。而且,只要複數種類之彈性體之至少一者含有苯乙烯單位作為主鏈之構成單位即可。又,複數種類之彈性體中至少一者若為苯乙烯單位含量為14重量%以上、50重量%以下之範圍內,或重量平均分子量為10,000以上、200,000以下之範圍內,
則為本發明之範圍。且,構成接著層3之接著劑中,含複數種類彈性體時,亦可於混合結果將苯乙烯單位含量調整為上述範圍內。例如苯乙烯單位含量為30重量%之KURARAY股份有限公司製之Septon(商品名)之Septon 4033與苯乙烯單位含量為13重量%之Septon(商品名)之Septon 2063以重量比1比1混合時,苯乙烯含量相對於接著劑中所含之彈性體全體成為21~22重量%,因此成為14重量%以上。又,例如苯乙烯單位為10重量%者與60重量%者以重量比1比1混合時,成為35重量%,成為上述範圍內。本發明亦可為此等形態。又,構成接著層3之接著劑中所含之複數種類之彈性體最好全於上述範圍內含有苯乙烯單位且為上述範圍內之重量平均分子量。
In addition, multiple types of elastomers may be mixed. That is, the adhesive constituting the
又,較好使用光硬化性樹脂(例如UV硬化性樹脂)以外之樹脂形成接著層3。藉由使用光硬化性樹脂以外之樹脂,於接著層3剝離或去除後,可防止於密封體7之微小凹凸周邊產生殘渣。尤其作為構成接著層3之接著劑,並非溶解於所有溶劑者,較好為溶解於特定溶劑者。此係因為不對密封體7施加物理力即可就由將接著層3溶解於溶劑中而去除。接著層3之去除時,即使是強度低的密封體7,亦可不使密封體7破損、變形地容易將接著層3去除。
In addition, it is preferable to use a resin other than a photocurable resin (for example, a UV curable resin) to form the
(聚碸系樹脂) (Polymer resin)
用以形成接著層3之接著劑亦可含有聚碸系樹脂。藉由使接著層3以聚碸系樹脂形成,即使於密封體形成步驟
中進行高溫處理,於隨後之步驟中亦可使接著層3溶解,而可自密封體7剝離支撐體1。接著層3若含有聚碸樹脂,則於密封體形成步驟中,可使用例如於300℃以上之高溫處理之高溫製程。
The adhesive used to form the
聚碸系樹脂具有由下述通式(3)表示之構成單位及下述通式(4)表示之構成單位中之至少一種構成單位所成之構造。 The polymer resin has a structure composed of at least one of the constituent units represented by the following general formula (3) and the constituent units represented by the following general formula (4).
(此處,通式(3)之R1、R2及R3以及通式(4)中之R1及R2分別獨立選自伸苯基、伸萘基及伸蒽基所成之群,X’為碳數1以上、3以下之伸烷基)。 (Here, R 1 , R 2 and R 3 in the general formula (3) and R 1 and R 2 in the general formula (4) are independently selected from the group consisting of phenylene, naphthylene and anthrylene , X'is an alkylene group having a carbon number of 1 or more and 3 or less).
藉由使聚碸系樹脂具備由式(3)表示之聚碸構成單位及式(4)表示之聚醚碸構成單位中之至少一種,於支撐體1及分離層2上形成接著層3之後,於密封體形成步驟中,即使進行高溫度條件之處理,亦可防止接著層3因分解及聚合等而不溶化。且,聚碸系樹脂若為由上述式(3)表示之聚碸構成單位所成之聚碸樹脂,則於更高溫度加熱時亦可安定。因此,可防止洗淨後之密封體7產生起因於接著層3之殘渣。
After the polyether-based resin is provided with at least one of the polyether constitutional unit represented by the formula (3) and the polyether constitutional unit represented by the formula (4), the
聚碸系樹脂之重量平均分子量(Mw)較好為30,000以上、70,000以下之範圍內,更好為30,000以上、50,000以下之範圍內。聚碸系樹脂之重量平均分子量(Mw)若為30,000以上之範圍內,則可獲得例如可於300℃以上之高溫度使用之接著劑組成物。又,聚碸系樹脂之重量平均分子量(Mw)若為70,000以下之範圍內,則可藉由溶劑適當地溶解。亦即,可獲得可藉由溶劑較好地去除之接著劑組成物。 The weight-average molecular weight (Mw) of the polyuncle-based resin is preferably in the range of 30,000 or more and 70,000 or less, more preferably in the range of 30,000 or more and 50,000 or less. If the weight average molecular weight (Mw) of the polyimide-based resin is within the range of 30,000 or more, an adhesive composition that can be used at a high temperature of 300°C or more can be obtained, for example. In addition, if the weight average molecular weight (Mw) of the polyimide-based resin is within the range of 70,000 or less, it can be appropriately dissolved in a solvent. That is, an adhesive composition that can be removed by a solvent can be obtained.
(稀釋溶劑) (Diluent solvent)
作為形成接著層3時使用之稀釋溶劑可舉例例如己烷、庚烷、辛烷、壬烷、異壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀烴、碳數4至15之分支鏈狀之烴,例如環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等之環狀烴,對-薄荷烷、鄰-薄荷烷、間-薄荷烷、二苯基甲烷、1,4-萜二醇、1,8-萜二醇、冰片烷(bornane)、降冰片烷、蒎烷、側柏烷、長松針烷(carane)、長葉烯、香葉醇、橙花醇、沉香醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-松油醇、β-松油醇、γ-松油醇、松油烯-1-醇、松油烯-4-醇、乙酸二氫松香酯、1,4-桉葉油醇、1,8-桉葉油醇、龍腦香、香芹酮、紫羅蘭酮、側柏酮、樟腦、d-檸檬烯、l-檸檬烯、二戊烯等之萜烯系溶劑;γ-丁內酯等內酯類;丙酮、甲基乙基酮、環己酮(CH)、甲基-正-戊基酮、甲基異戊基酮、2-庚酮等酮類;
乙二醇、二乙二醇、丙二醇、二丙二醇等多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯或二丙二醇單乙酸酯等之具有酯鍵之化合物、前述多元醇類或前述具有酯鍵之化合物之單甲醚、單乙醚、單丙醚、單丁醚等之單烷醚或單苯醚等之具有醚鍵之化合物等之多元醇類之衍生物(該等中,較好為丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME));如二噁烷之環式醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、乙酸甲氧基丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酮酸甲酯、乙氧基丙酮酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲苯基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚等之芳香族系有機溶劑等。
As the dilution solvent used when forming the
(其他成分) (Other ingredients)
構成接著層3之接著劑在不損及本質上特性之範圍內,亦可進而含有具有混合性之其他物質。例如可進而使用用以改良接著劑性能之附加樹脂、可塑劑、接著輔助劑、安定劑、著色劑、熱聚合抑制劑及界面活性劑等之慣用之各種添加劑。
The adhesive constituting the
[分離層2] [Separation layer 2]
如上述,分離層2可藉由照射光而變質。一實施形態中,藉由介由支撐體1對分離層2照射光而使分離層2變質,可使支撐體1與密封體7分離。
As described above, the
分離層2之厚度更好為如0.05μm以上、50μm以下之範圍內,又更好為0.3μm以上、1μm以下之範圍內。分離層2之厚度若侷限於0.05μm以上、50μm以下之範圍,則藉由短時間之光照射及低能量之光照射,即可使分離層2產生期望之變質。又,分離層2之厚度,基於生產性之觀點,特佳為侷限於1μm以下之範圍。
The thickness of the
且,於分離層2與支撐體1之間亦可進一步形成其他層。該情況下,其他層只要由光可透過之材料構成即可。藉此,不會妨礙光朝分離層2之入射,可適當追加具有較佳性質等之層。根據構成分離層2之材料種類而異,可用之光波長亦不同。因此,構成其他層之材料並無必要能使所有光透過,可自能使構成分離層2之材料變質之波長的光透過之材料中適當選擇。
Moreover, another layer may be further formed between the
又,分離層2較好僅由具有吸收光之構造的材料形成,但在不損及本發明之本質特性之範圍內,亦可添加不具有吸收光之構造之材料形成分離層2。且,分離層2中與接著層3對向之側的面較好為平坦(未形成凹凸),藉此,容易進行分離層2之形成,且貼附中亦可均一貼附。
In addition, the
分離層2亦可由氟碳化合物形成。藉由分離層2由氟碳化合物構成,可成為因吸收光而變質,結果,失去接受光照射前之強度或接著性。因此,稍施加外力(例如拉起支撐體1等)即可破壞分離層2,可容易地使支撐體1與密封體
7分離。構成分離層2之氟碳化合物可較好地藉由電漿CVD(化學氣相堆積)法成膜。
The
氟碳化合物根據其種類而定可吸收具有固有範圍之波長的光。藉由以分離層2中所用之氟碳化合物所吸收之範圍之波長的光照射分離層2,可適當使氟碳化合物變質。又,分離層2之光吸收率較好為80%以上。
Fluorocarbon compounds can absorb light with a wavelength within a specific range depending on their type. By irradiating the
作為照射至分離層2之光,只要根據氟碳化合物可吸收之波長,適當使用例如YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等之固體雷射、色素雷射等之液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等之氣體雷射、半導體雷射、自由電子雷射等之雷射光,或非雷射光即可。可使氟碳化合物變質之波長並不限於該等者,可使用例如600nm以下之範圍者。 As the light irradiated to the separation layer 2, solid lasers such as YAG lasers, ruby lasers, glass lasers, YVO 4 lasers, LD lasers, fiber lasers, etc. are appropriately used according to the wavelength that the fluorocarbon can absorb. Lasers, color lasers and other liquid lasers, CO 2 lasers, excimer lasers, Ar lasers, He-Ne lasers and other gas lasers, semiconductor lasers, free electron lasers and other lasers, or Non-laser light is fine. The wavelength at which the fluorocarbon compound can be modified is not limited to these wavelengths, and, for example, those in the range of 600 nm or less can be used.
分離層2亦可含有其重複單位中含有具有光吸收性之構造的聚合物。該聚合物接受光照射而變質。該聚合物之變質係因上述構造吸收所照射之光而產生。分離層2因聚合物變質之結果,而喪失接受光照射前之強度或接著性。因此,稍施加外力(例如拉起支撐體1等)即可破壞分離層2,可容易地使支撐體1與密封體7分離。
The
具有光吸收性之上述構造係吸收光並使含有該構造作為重複單位之聚合物變質之化學構造。該構造為 例如由取代或非取代之苯環、縮合環或雜環所成之含有共軛π電子系之原子團。更詳言之,該構造可為卡多(cardo)構造、或存在於上述聚合物側鏈之二苯甲酮構造、二苯硫醚構造、二苯基碸構造(雙苯基碸構造)、二苯基構造或二苯基胺構造。 The above-mentioned structure having light absorption is a chemical structure that absorbs light and alters the polymer containing the structure as a repeating unit. The structure is For example, an atomic group containing a conjugated π-electron system formed by a substituted or unsubstituted benzene ring, a condensed ring or a heterocyclic ring. In more detail, the structure may be a cardo structure, or a benzophenone structure, a diphenyl sulfide structure, a diphenyl sulfide structure (bisphenyl sulfide structure), a benzophenone structure, a diphenyl sulfide structure, and a Diphenyl structure or diphenylamine structure.
上述構造存在於上述聚合物側鏈時,該構造可由以下式表示。 When the above-mentioned structure exists in the side chain of the above-mentioned polymer, the structure can be represented by the following formula.
(式中,R分別獨立為烷基、芳基、鹵基、羥基、酮基、亞碸基、碸基或N(R4)(R5)(此處,R4及R5分別獨立為氫原子或碳數1~5之烷基),Z為不存在或為-CO-、-SO2-、-SO-或-NH-,n為0或1~5之整數)。 (In the formula, R is each independently an alkyl group, an aryl group, a halo group, a hydroxyl group, a keto group, an allylylene group, a oxo group, or N(R 4 )(R 5 ) (here, R 4 and R 5 are each independently A hydrogen atom or an alkyl group with 1 to 5 carbon atoms), Z is not present or is -CO-, -SO 2 -, -SO- or -NH-, n is an integer of 0 or 1 to 5).
又,上述聚合物中,含有例如以下式中由(a)~(d)之任一者表示之重複單位,或由(e)表示、或於其主鏈中含有(f)之構造。 In addition, the above-mentioned polymer contains, for example, a repeating unit represented by any one of (a) to (d) in the following formulae, or a structure represented by (e), or a structure containing (f) in the main chain.
(式中,l為1以上之整數,m為0或1~2之整數,X於(a)~(e)中,為上述之“化3”所示之式之任一者,於(f)中為上述之“化3”所示之式之任一者,或不存在,Y1及Y2分別獨立為-CO-或SO2-,l較好為10以下之整數)。
(In the formula, l is an integer of 1 or more, m is 0 or an integer of 1 to 2, and X in (a) to (e) is any one of the formulae shown in the above "
上述之“化3”所示之苯環、縮合環及雜環之例,舉例為苯基、取代苯基、苄基、取代苄基、萘基、取代萘基、蒽基、取代蒽基、蒽醌、取代蒽醌、吖啶、取代吖啶、偶氮苯、取代偶氮苯、螢光胺(fluorime)、取代螢光胺、螢光酮(fluorimone)、取代螢光酮、咔唑、取代咔唑、N-烷基咔唑、苯并呋喃、取代苯并呋喃、菲、取代菲、芘及取代芘。例示之取代基進而具有取代基時,其取代基係選自
例如烷基、芳基、鹵素原子、烷氧基、硝基、醛類、氰基、醯胺、二烷基胺基、磺醯胺、醯亞胺、羧酸、羧酸酯、磺酸、磺酸酯、烷基胺基及芳基胺基。
Examples of the benzene ring, condensed ring and heterocyclic ring shown in the above "
上述之“化3”所示之取代基中,作為具有兩個苯基之第5個取代基且Z為-SO2-時之例列舉為雙(2,4-二羥基苯基)碸、雙(3,4-二羥基苯基)碸、雙(3,5-二羥基苯基)碸、雙(3,6-二羥基苯基)碸、雙(4-羥基苯基)碸、雙(3-羥基苯基)碸、雙(2-羥基苯基)碸、及雙(3,5-二甲基-4-羥基苯基)碸等。
Among the substituents shown in "
上述之“化3”所示之取代基中,作為具有兩個苯基之第5個取代基且Z為-SO-時之例列舉為雙(2,3-二羥基苯基)亞碸、雙(5-氯-2,3-二羥基苯基)亞碸、雙(2,4-二羥基苯基)亞碸、雙(2,4-二羥基-6-甲基苯基)亞碸、雙(5-氯-2,4-二羥基苯基)亞碸、雙(2,5-二羥基苯基)亞碸、雙(3,4-二羥基苯基)亞碸、雙(3,5-二羥基苯基)亞碸、雙(2,3,4-三羥基苯基)亞碸、雙(2,3,4-三羥基-6-甲基苯基)-亞碸、雙(5-氯-2,3,4-三羥基苯基)亞碸、雙(2,4,6-三羥基苯基)亞碸及雙(5-氯-2,4,6-三羥基苯基)亞碸等。
Among the substituents shown in "
上述之“化3”所示之取代基中,作為具有兩個苯基之第5個取代基且Z為-C(=O)-時之例列舉為2,4-二羥基二苯甲酮、2,3,4-三羥基二苯甲酮、2,2’,4,4’-四羥基二苯甲酮、2,2’,5,6’-四羥基二苯甲酮、2-羥基-4-甲氧基二苯甲酮、2-羥基-4-辛氧基二苯甲酮、2-羥基-4-十二烷氧基二苯甲酮、2,2’-二羥基-4-甲氧基二苯甲酮、2,6-二羥基-4-
甲氧基二苯甲酮、2,2’-二羥基-4,4’-二甲氧基二苯甲酮、4-胺基-2’-羥基二苯甲酮、4-二甲胺基-2’-羥基二苯甲酮、4-二乙胺基-2’-羥基二苯甲酮、4-二甲胺基-4’-甲氧基-2’-羥基二苯甲酮、4-二甲胺基-2’,4’-二羥基二苯甲酮及4-二甲胺基-3’,4’-二羥基二苯甲酮等。
Among the substituents shown in the above "
上述構造存在於上述聚合物之側鏈時,含上述構造之重複單位於上述聚合物中所佔之比例係使分離層2之光透過率成為0.001%以上、10%以下之範圍內。若以使該比例侷限在該範圍內之方式調製聚合物,則分離層2可充分吸收光而能確實且迅速地變質。亦即,可輕易地自密封體7去除支撐體1,且可縮短該去除必要之光照射時間。
When the above-mentioned structure is present in the side chain of the above-mentioned polymer, the proportion of the repeating unit containing the above-mentioned structure in the above-mentioned polymer is such that the light transmittance of the
上述構造依據其種類之選擇可吸收具有期望範圍之波長之光。例如,上述構造可吸收之光之波長更好為100nm以上、2,000nm以下之範圍內。該範圍內中,上述構造可吸收之光之波長為更短波長側,例如100nm以上、500nm以下之範圍內。例如,上述構造可較好藉由吸收具有約300nm以上、370nm以下之範圍內之波長之紫外光,而使包含該構造之聚合物變質。 The above-mentioned structure can absorb light with a desired range of wavelength according to the selection of its kind. For example, the wavelength of light that can be absorbed by the above structure is more preferably within a range of 100 nm or more and 2,000 nm or less. Within this range, the wavelength of light that can be absorbed by the above-mentioned structure is on the shorter wavelength side, for example, within the range of 100 nm or more and 500 nm or less. For example, the structure described above can preferably degrade the polymer containing the structure by absorbing ultraviolet light having a wavelength in the range of about 300 nm or more and 370 nm or less.
上述構造可吸收之光為自例如高壓水銀燈(波長:254nm以上、436nm以下)、KrF準分子雷射(波長:248nm)、ArF準分子雷射(波長:193nm)、F2準分子雷射(波長:157nm)、XeCl雷射(波長:308nm)、XeF雷射(波長:351nm)或者固體UV雷射(波長:355nm)發出之光,或 為g線(波長:436nm)、h線(波長:405nm)或i線(波長:365nm)等。 The above-mentioned structure can absorb light from, for example, high-pressure mercury lamps (wavelength: above 254nm and below 436nm), KrF excimer laser (wavelength: 248nm), ArF excimer laser (wavelength: 193nm), F2 excimer laser (wavelength: : 157nm), XeCl laser (wavelength: 308nm), XeF laser (wavelength: 351nm) or solid UV laser (wavelength: 355nm), or These are g-line (wavelength: 436 nm), h-line (wavelength: 405 nm), i-line (wavelength: 365 nm), or the like.
上述分離層2含有包含上述構造作為重複單位之聚合物,但分離層2可進而含有上述聚合物以外之成分。該成分列舉為填料、可塑劑、及可提高支撐體1之剝離性之成分等。該等成分係自不妨礙由上述構造之光吸收、及聚合物之變質或可促進該吸收及變質之過去習知物質或材料適當選擇。
The
分離層2亦可由無機物構成。分離層2藉由以無機物構成,而可藉由吸收光而變質,結果,喪失接受光照射前之強度或接著性。因此,藉由稍施加外力(例如,拉起支撐體1等)即可破壞分離層2,使支撐體1與密封體7容易地分離。
The
上述無機物只要為藉由吸收光而變質之構成即可,例如可適當地使用由金屬、金屬化合物及碳所組成之群選出之一種以上之無機物。所謂金屬化合物意指含金屬原子之化合物,例如可為金屬氧化物、金屬氮化物。該無機物之例示並未限定於此,但可列舉為例如由金、銀、銅、鐵、鎳、鋁、鈦、鉻、SiO2、SiN、Si3N4、TiN、及碳所組成之群選出之一種以上之無機物。又,所謂碳亦為可包含碳之同位素之概念,例如可為金剛石、富勒烯、類金剛石碳、碳奈米管等。 The above-mentioned inorganic substance should just be a structure which changes in quality by absorbing light, for example, at least one kind of inorganic substance selected from the group consisting of a metal, a metal compound, and carbon can be used suitably. The so-called metal compound means a compound containing a metal atom, such as a metal oxide or a metal nitride. The illustration of the inorganic substance is not limited to this, but it can be exemplified by the group consisting of gold, silver, copper, iron, nickel, aluminum, titanium, chromium, SiO 2 , SiN, Si 3 N 4 , TiN, and carbon. More than one selected inorganic substance. In addition, the so-called carbon is also a concept that can contain isotopes of carbon, for example, diamond, fullerene, diamond-like carbon, carbon nanotube, etc.
上述無機物係依據其種類而吸收具有固有範圍之波長之光。藉由使分離層2中使用之無機物所吸收之範圍的波長光照射至分離層2,可使上述無機物適當變質。
The above-mentioned inorganic substance absorbs light having a wavelength within a specific range according to its kind. By irradiating the
作為對由無機物所成之分離層2照射之光,只要對應於上述無機物可吸收之波長,適當使用例如由YAG雷射、紅寶石雷射、玻璃雷射、YVO4雷射、LD雷射、光纖雷射等固體雷射、色素雷射等液體雷射、CO2雷射、準分子雷射、Ar雷射、He-Ne雷射等氣體雷射、半導體雷射、自由電子雷射等雷射光,或非雷射光即可。
As the light irradiated to the
由無機物所成之分離層2可藉由例如濺鍍、化學蒸鍍(CVD)、電鍍、電漿CVD、旋轉塗佈等習知技術,於支撐體1上形成。由無機物所成之分離層2之厚度並無特別限制,只要是可充分吸收使用之光之膜厚即可,但更好為例如0.05μm以上、10μm以下之範圍內之膜厚。又,亦可預先於由構成分離層2之無機物所成之無機膜(例如,金屬膜)之兩面或單面上塗佈接著劑,並貼附於支撐體1上。
The
又,使用金屬膜作為分離層2時,依據分離層2之膜質、雷射光源之種類、雷射輸出等條件,能引起雷射之反射或使膜帶電等。因此,較好藉由將抗反射膜或抗靜電膜設置於分離層2之上下或其一面上,而實現該等之對策。
Moreover, when a metal film is used as the
分離層2亦可藉由具有紅外線吸收性之構造之化合物形成。該化合物係藉由吸收紅外線而變質。分離層2於化合物變質之結果,喪失接受紅外線照射前之強度或接著性。因此,藉由稍施加外力(例如,拉起支撐體1等)即可破壞分離層2,使支撐體1與密封體7容易地分離。
The
具有紅外線吸收性之構造或包含具有紅外線吸收性之構造之化合物可為例如烷、烯(乙烯基、反式、順式、亞乙烯、三取代、四取代、共軛、疊烯(cumulene)、環式)、炔(單取代、二取代)、單環式芳香族(苯、單取代、二取代、三取代)、醇及酚類(自由OH、分子內氫鍵、分子間氫鍵、飽和二級、飽和三級、不飽和二級、不飽和三級)、乙縮醛、縮酮、脂肪族醚、芳香族醚、乙烯基醚、環氧乙烷環醚、過氧化物醚、酮類、二烷基羰基、芳香族羰基、1,3-二酮之烯醇、鄰-羥基芳基酮、二烷基醛、芳香族醛、碳酸(二聚物、碳酸陰離子)、甲酸酯、乙酸酯、共軛酯、非共軛酯、芳香族酯、內酯(β-、γ-、δ-)、脂肪族鹽酸鹽、芳香族鹽酸鹽、酸酐(共軛、非共軛、環式、非環式)、一級醯胺、二級醯胺、內醯胺、一級胺(脂肪族、芳香族)、二級胺(脂肪族、芳香族)、三級胺(脂肪族、芳香族)、一級胺鹽、二級胺鹽、三級胺鹽、銨離子、脂肪族腈、芳香族腈、羧醯亞胺、脂肪族異腈、芳香族異腈、異氰酸酯、硫代氰酸酯、脂肪族異硫代氰酸酯、芳香族異硫代氰酸酯、脂肪族硝基化合物、芳香族硝基化合物、硝基胺、亞硝基胺、硝酸酯、亞硝酸酯、亞硝基鍵(脂肪 族、芳香族、單體、二聚物)、硫醇及噻吩以及硫醇酸等硫化合物,硫代羰基、亞碸、碸、磺醯氯、一級磺醯胺、二級磺醯胺、硫酸酯、碳-鹵素鍵、Si-A1鍵(A1為H、C、O或鹵素)、P-A2鍵(A2為H、C或O)或Ti-O鍵。 The structure with infrared absorption or the compound containing the structure with infrared absorption can be, for example, alkanes, alkenes (vinyl, trans, cis, vinylidene, tri-substituted, tetra-substituted, conjugated, cumulene, Cyclic), alkynes (monosubstituted, disubstituted), monocyclic aromatics (benzene, monosubstituted, disubstituted, trisubstituted), alcohols and phenols (free OH, intramolecular hydrogen bonds, intermolecular hydrogen bonds, saturated Secondary, saturated tertiary, unsaturated secondary, unsaturated tertiary), acetals, ketals, aliphatic ethers, aromatic ethers, vinyl ethers, ethylene oxide cyclic ethers, peroxide ethers, ketones Type, dialkylcarbonyl, aromatic carbonyl, 1,3-diketone enol, o-hydroxyaryl ketone, dialkyl aldehyde, aromatic aldehyde, carbonic acid (dimer, carbonate anion), formate , Acetate, conjugated ester, non-conjugated ester, aromatic ester, lactone (β-, γ-, δ-), aliphatic hydrochloride, aromatic hydrochloride, acid anhydride (conjugated, non-co Yoke, cyclic, acyclic), primary amine, secondary amine, internal amine, primary amine (aliphatic, aromatic), secondary amine (aliphatic, aromatic), tertiary amine (aliphatic) , Aromatic), primary amine salt, secondary amine salt, tertiary amine salt, ammonium ion, aliphatic nitrile, aromatic nitrile, carboxyimid, aliphatic isonitrile, aromatic isonitrile, isocyanate, thiocyanate Acid esters, aliphatic isothiocyanates, aromatic isothiocyanates, aliphatic nitro compounds, aromatic nitro compounds, nitroamines, nitrosamines, nitrates, nitrites, nitroso Nitro bond (aliphatic, aromatic, monomer, dimer), thiol and thiophene, and thiol acid and other sulfur compounds, thiocarbonyl, sulfonium, sulfonium chloride, primary sulfonamide, secondary Sulfonamide, sulfate ester, carbon-halogen bond, Si-A 1 bond (A 1 is H, C, O or halogen), PA 2 bond (A 2 is H, C or O), or Ti-O bond.
包含上述碳-鹵素鍵之構造列舉為例如-CH2Cl、-CH2Br、-CH2I、-CF2-、-CF3、-CH=CF2、-CF=CF2、氟化芳基及氯化芳基等。 The structure containing the above-mentioned carbon-halogen bond is enumerated, for example, -CH 2 Cl, -CH 2 Br, -CH 2 I, -CF 2 -, -CF 3 , -CH=CF 2 , -CF=CF 2 , fluorinated aromatic And chlorinated aryl groups.
上述含Si-A1鍵之構造列舉為SiH、SiH2、SiH3、Si-CH3、Si-CH2-、Si-C6H5、SiO-脂肪族、Si-OCH3、Si-OCH2CH3、Si-OC6H5、Si-O-Si、Si-OH、SiF、SiF2及SiF3等。含Si-A1鍵之構造最好為形成矽氧烷骨架及倍半矽氧烷骨架。 The above-mentioned structures containing Si-A 1 bonds are listed as SiH, SiH 2 , SiH 3 , Si-CH 3 , Si-CH 2 -, Si-C 6 H 5 , SiO-aliphatic, Si-OCH 3 , Si-OCH 2 CH 3 , Si-OC 6 H 5 , Si-O-Si, Si-OH, SiF, SiF 2 and SiF 3 etc. The structure containing the Si-A 1 bond preferably forms a siloxane skeleton and a silsesquioxane skeleton.
含上述P-A2鍵之構造列舉為PH、PH2、P-CH3、P-CH2-、P-C6H5、A3 3-P-O(A3為脂肪族或芳香族)、(A4O)3-P-O(A4為烷基)、P-OCH3、P-OCH2CH3、P-OC6H5、P-O-P、P-OH及O=P-OH等。 The structure containing the above PA 2 bond is listed as PH, PH 2 , P-CH 3 , P-CH 2 -, PC 6 H 5 , A 3 3 -PO (A 3 is aliphatic or aromatic), (A 4 O ) 3- PO (A 4 is an alkyl group), P-OCH 3 , P-OCH 2 CH 3 , P-OC 6 H 5 , POP, P-OH and O=P-OH, etc.
上述構造可依據其種類之選擇而吸收具有期望範圍之波長之紅外線。具體而言,上述構造可吸收之紅外線之波長為例如1μm以上、20μm以下之範圍內,在2μm以上、15μm以下之範圍內可更好地吸收。另外,上述構造為Si-O鍵、Si-C鍵及Ti-O鍵時,可為9μm以上、11μm以下之範圍內。又,若為本領域技術人員則可輕易地了解各構造可吸收之紅外線之波長。例如,各構造中之吸收帶可參照非專利文獻:SILVERSTEIN.BASSLER.MORRILL 著「利用有機化合物光譜之鑑定法(第5版)-MS、IR、NMR、UV併用-」(1992年發行)第146頁~第151頁之記載。 The above-mentioned structure can absorb infrared light having a wavelength in a desired range according to the selection of its kind. Specifically, the wavelength of the infrared ray that can be absorbed by the above structure is, for example, within the range of 1 μm or more and 20 μm or less, and it can be better absorbed within the range of 2 μm or more and 15 μm or less. In addition, when the above-mentioned structure is a Si-O bond, Si-C bond, and Ti-O bond, it may be within a range of 9 μm or more and 11 μm or less. Moreover, those skilled in the art can easily understand the wavelength of infrared rays that can be absorbed by each structure. For example, the absorption band in each structure can refer to the non-patent literature: SILVERSTEIN. BASSLER. MORRILL The description of "Identification Method Using Organic Compound Spectra (5th Edition)-Combination of MS, IR, NMR, and UV -" (issued in 1992) pages 146 to 151.
分離層2之形成所用之具有紅外線吸收性之構造之化合物只要是具有如上述構造之化合物中,可溶解於用以塗佈之溶劑且可固化形成固體層者即無特別限制。然而,就使分離層2中之化合物有效地變質,使支撐體1與密封體7之分離容易而言,較好使分離層2中之紅外線之吸收變大,亦即對分離層2照射紅外線時之紅外線透過率低。具體而言,較好分離層2中之紅外線透過率低於90%,更好紅外線透過率低於80%。
The compound having an infrared-absorbing structure used in the formation of the
若列舉一例說明,則作為具有矽氧烷骨架之化合物,可使用例如以下述化學式(5)表示之重複單位及以下述化學式(6)表示之重複單位之共聚物之樹脂,或以下述化學式(5)表示之重複單位及源自丙烯酸系化合物之重複單位之共聚物的樹脂。 If an example is given, as a compound having a siloxane skeleton, for example, a resin of a copolymer of a repeating unit represented by the following chemical formula (5) and a repeating unit represented by the following chemical formula (6), or the following chemical formula ( 5) Resins representing the repeating units and copolymers derived from the repeating units of acrylic compounds.
(化學式(6)中,R6為氫、碳數10以下之烷基、或碳數10以下之烷氧基)。 (In the chemical formula (6), R 6 is hydrogen, an alkyl group with a carbon number of 10 or less, or an alkoxy group with a carbon number of 10 or less).
其中,具有矽氧烷骨架之化合物更好為以上述化學式(5)表示之重複單位及以下述化學式(7)表示之重複單位之共聚物之第三丁基苯乙烯(TBST)-二甲基矽氧烷共聚物,又更好為以1:1包含以上述式(5)表示之重複單位及以下述化學式(7)表示之重複單位之TBST-二甲基矽氧烷共聚物。 Among them, the compound having a siloxane skeleton is more preferably tertiary butyl styrene (TBST)-dimethyl styrene (TBST)-a copolymer of the repeating unit represented by the above chemical formula (5) and the repeating unit represented by the following chemical formula (7) The silicone copolymer is more preferably a TBST-dimethylsiloxane copolymer comprising the repeating unit represented by the above formula (5) and the repeating unit represented by the following chemical formula (7) in 1:1.
又,具有倍半矽氧烷骨架之化合物可使用例如以下述化學式(8)表示之重複單位及以下述化學式(9)表示之重複單位之共聚物的樹脂。 In addition, the compound having a silsesquioxane skeleton can use, for example, a resin of a repeating unit represented by the following chemical formula (8) and a copolymer of the repeating unit represented by the following chemical formula (9).
(化學式(8)中,R7為氫或碳數1以上、10以下之烷基,化學式(9)中,R8為碳數1以上、10以下之烷基,或苯基)。 (In the chemical formula (8), R 7 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and in the chemical formula (9), R 8 is an alkyl group with 1 to 10 carbon atoms, or a phenyl group).
具有倍半矽氧烷骨架之化合物,除此之外,亦可適當地使用日本特開2007-258663號公報(2007年10月4日公開)、日本特開2010-120901號公報(2010年6月3日公開)、 日本特開2009-263316號公報(2009年11月12日公開)及日本特開2009-263596號公報(2009年11月12日公開)中揭示之各種倍半矽氧烷樹脂。 In addition to compounds having a silsesquioxane skeleton, Japanese Patent Application Publication No. 2007-258663 (published on October 4, 2007) and Japanese Patent Application Publication No. 2010-120901 (2010 June Released on March 3), Various silsesquioxane resins disclosed in Japanese Patent Application Publication No. 2009-263316 (published on November 12, 2009) and Japanese Patent Application Publication No. 2009-263596 (published on November 12, 2009).
其中,具有倍半矽氧烷骨架之化合物更好為以下述化學式(10)表示之重複單位及以下述化學式(11)表示之重複單位之共聚物,又更好以7:3含有以下述化學式(10)表示之重複單位及以下述化學式(11)表示之重複單位之共聚物。 Among them, the compound having a silsesquioxane skeleton is more preferably a copolymer of a repeating unit represented by the following chemical formula (10) and a repeating unit represented by the following chemical formula (11), and more preferably 7:3 containing the following chemical formula (10) A copolymer of the repeating unit represented by the following chemical formula (11).
具有倍半矽氧烷骨架之聚合物有無規構造、 階梯構造及籠型構造,可為任何構造。 The polymer with silsesquioxane skeleton has random structure, The ladder structure and cage structure can be any structure.
又,含有Ti-O鍵之化合物列舉為例如(i)四-異丙氧化鈦、四-正丁氧化鈦、肆(2-乙基己氧基)鈦、及異丙氧化鈦辛二醇等烷氧基鈦;(ii)二-異丙氧基.雙(乙醯基丙酮基)鈦、及丙烷二氧基鈦雙(乙基乙醯基乙酸酯)等螯合鈦;(iii)i-C3H7O-[-Ti(O-i-C3H7)2-O-]n-i-C3H7、及n-C4H9O-[-Ti(O-n-C4H9)2-O-]n-n-C4H9等之鈦聚合物;(iv)三-正丁氧基鈦單硬脂酸酯、硬脂酸鈦、二異丙氧基鈦二異硬脂酸酯、及(2-正丁氧基羰基苯甲醯氧基)三丁氧化鈦等醯化鈦;(v)二正丁氧基.雙(三乙醇胺酸)鈦等之水溶性鈦化合物等。 Furthermore, compounds containing Ti-O bonds are exemplified by (i) tetra-isopropoxide titanium, tetra-n-butoxide titanium, tetrakis (2-ethylhexyloxy) titanium, and titanium isopropoxide octanediol, etc. Titanium alkoxide; (ii) di-isopropoxy. Chelated titanium such as bis(acetylacetonyl) titanium and propanedioxytitanium bis(ethyl acetylacetate); (iii) iC 3 H 7 O-[-Ti(OiC 3 H 7 ) 2 -O-] n -iC 3 H 7 , and nC 4 H 9 O-[-Ti(OnC 4 H 9 ) 2 -O-] n -nC 4 H 9 and other titanium polymers; (iv) three- Titanium n-butoxide monostearate, titanium stearate, titanium diisopropoxide diisostearate, and (2-n-butoxycarbonylbenzyloxy) titanium tributoxide, etc. Titanium; (v) di-n-butoxy. Water-soluble titanium compounds such as bis(triethanolamine) titanium, etc.
其中,包含Ti-O鍵之化合物較好為二正丁氧基.雙(三乙醇胺酸)鈦(Ti(OC4H9)2[OC2H4N(C2H4OH)2]2)。 Among them, the compound containing a Ti-O bond is preferably di-n-butoxy. Bis(triethanolamine) titanium (Ti(OC 4 H 9 ) 2 [OC 2 H 4 N(C 2 H 4 OH) 2 ] 2 ).
上述分離層2含有具有紅外線吸收性之構造之化合物,但分離層2可進而含有上述化合物以外之成分。至於該成分列舉為填料、可塑劑、及可提高支撐體1之剝離性之成分等。該等成分可自不妨礙由上述構造之紅外線吸收及化合物之變質、或促進該吸收及變質之過去習知物質或材料適當選擇。
The
分離層2亦可含有紅外線吸收物質。分離層2藉由含有紅外線吸收物質而構成,而可藉由吸收光而變質,結果,喪失接受光照射前之強度或接著性。因此,可藉由稍施加
外力(例如拉起支撐體1等)即可破壞分離層2,使支撐體1與密封體7容易地分離。
The
紅外線吸收物質只要為藉由吸收紅外線而變質之構成即可,可較好地使用例如碳黑、鐵粒子或鋁粒子。紅外線吸收物質根據其種類而吸收具有固有範圍之波長之光。藉由對分離層2照射分離層2中使用之紅外線吸收物質所吸收之範圍之波長的光,可使紅外線吸收物質較好地變質。
The infrared absorbing substance may be any structure that changes its quality by absorbing infrared rays, and carbon black, iron particles, or aluminum particles can be preferably used, for example. The infrared absorbing material absorbs light with a wavelength within a specific range according to its type. By irradiating the
分離層2可藉由反應性聚倍半矽氧烷聚合而形成,藉此,分離層2具備高的耐藥品性及高的耐熱性。
The
本說明書中,所謂反應性聚倍半矽氧烷係於聚倍半矽氧烷骨架末端具有矽烷醇基或可藉由水解而形成矽烷醇基之官能基之聚倍半矽氧烷,藉由該矽烷醇基或可形成矽烷醇基之官能基縮合,而可相互聚合者。且反應性聚倍半矽氧烷只要具備矽烷醇基或可形成矽烷醇基之官能基,則可採用具備無規構造、籠型構造、階梯構造等之倍半矽氧烷骨架者。 In this specification, the so-called reactive polysilsesquioxane is a polysilsesquioxane having a silanol group or a functional group that can be hydrolyzed to form a silanol group at the end of the polysilsesquioxane skeleton, by The silanol groups or functional groups that can form silanol groups are condensed and can be polymerized with each other. In addition, as long as the reactive polysilsesquioxane has a silanol group or a functional group capable of forming a silanol group, a silsesquioxane skeleton having a random structure, a cage structure, a step structure, etc. can be used.
又,反應性聚倍半矽氧烷更好為具有下述式(12)所示之構造。 In addition, the reactive polysilsesquioxane more preferably has a structure represented by the following formula (12).
式(12)中,R”分別獨立選自由氫及碳數1以上、10以下之烷基所成之群,更好選自由氫及碳數1以上、5以下之烷基所成之群。R”若為氫或碳數1以上、10以下之烷基,則藉由分離層2於形成步驟中加熱,可使式(12)表示之反應性聚倍半矽氧烷適當縮合。
In the formula (12), R" is independently selected from the group consisting of hydrogen and an alkyl group having a carbon number of 1 or more and 10 or less, and is more preferably selected from the group consisting of hydrogen and an alkyl group having a carbon number of 1 or more and 5 or less. If R" is hydrogen or an alkyl group having 1 to 10 carbon atoms, the
式(12)中,p較好為1以上、100以下之整數,更好為1以上、50以下之整數。反應性聚倍半矽氧烷藉由具備式(12)表示之重複單位,而可形成比使用其他材料形成者之Si-O鍵含量更高、紅外線(0.78μm以上、1000μm以下),更好遠紅外線(3μm以上、1000μm以下),進而更好波長9μm以上、11μm以下之吸光度高的分離層2。
In formula (12), p is preferably an integer of 1 or more and 100 or less, more preferably an integer of 1 or more and 50 or less. Reactive polysilsesquioxanes have the repeating unit represented by formula (12), and can form higher Si-O bond content than those formed by other materials, infrared (0.78μm or more, 1000μm or less), better Far infrared rays (3 μm or more, 1000 μm or less), and more preferably a
又,式(12)中,R’分別獨立為相互相同或不同之有機基。此處,R’為例如芳基、烷基及烯基等,該等有機基亦可具有取代基。 In addition, in the formula (12), R'is each independently an organic group which is the same or different from each other. Here, R'is, for example, an aryl group, an alkyl group, an alkenyl group, etc., and these organic groups may have a substituent.
R’為芳基時,可舉例為苯基、萘基、蒽基、菲基等,更好為苯基。且芳基亦可透過碳數1~5之伸烷基鍵結於聚倍半矽氧烷骨架。 When R'is an aryl group, phenyl, naphthyl, anthryl, phenanthryl, etc. can be exemplified, and phenyl is more preferred. In addition, the aryl group can also be bonded to the polysilsesquioxane skeleton through an alkylene having 1 to 5 carbon atoms.
R’為烷基時,作為烷基可舉例為直鏈狀、分支鏈狀或環狀烷基。且R’為烷基時,較好碳數為1~15,更好為1~6。且R為環狀烷基時,亦可為具有單環狀或二~四環狀之構造之烷基。 When R'is an alkyl group, examples of the alkyl group include linear, branched, or cyclic alkyl groups. When R'is an alkyl group, the carbon number is preferably from 1 to 15, more preferably from 1 to 6. And when R is a cyclic alkyl group, it may also be an alkyl group having a monocyclic or di- to tetracyclic structure.
R’為烯基時,與烷基之情況同樣,可舉例為直鏈狀、分支鏈狀或環狀烯基,烯基較好碳數為2~15,更好為2~6。R’為環狀烯基時,亦可為具有單環狀或二~四環狀之構造之烯基。作為烯基可舉例為例如乙烯基及烯丙基等。 When R'is an alkenyl group, as in the case of an alkyl group, linear, branched, or cyclic alkenyl groups can be exemplified. The alkenyl group preferably has 2 to 15 carbon atoms, more preferably 2 to 6. When R'is a cyclic alkenyl group, it may also be an alkenyl group having a monocyclic or di- to tetracyclic structure. Examples of alkenyl groups include vinyl and allyl groups.
又,作為R’可具有之取代基,可舉例羥基及烷氧基等。取代基為烷氧基時,可舉例為直鏈狀、分支鏈狀或環狀烷氧基,烷氧基中之碳數較好為1~15,更好為1~10。 In addition, examples of substituents that R'may have include a hydroxyl group, an alkoxy group, and the like. When the substituent is an alkoxy group, linear, branched, or cyclic alkoxy groups can be exemplified, and the number of carbon atoms in the alkoxy group is preferably 1-15, more preferably 1-10.
又,於一觀點中,反應性聚倍半矽氧烷中之矽氧烷含量較好為70莫耳%以上、99莫耳%以下,更好為80莫耳%以上、99莫耳%以下。反應性聚倍半矽氧烷中之矽氧烷含量若為70莫耳%以上、99莫耳%以下,則可形成可藉由照射紅外線(較佳為遠紅外線,進而更加為波長9μm以上、11μm以下之光)而較好地變質之分離層2。
Furthermore, in one viewpoint, the content of silicone in the reactive polysilsesquioxane is preferably 70 mol% or more and 99 mol% or less, more preferably 80 mol% or more and 99 mol% or less . If the siloxane content in the reactive polysilsesquioxane is 70 mol% or more and 99 mol% or less, it can be formed by irradiating infrared rays (preferably far infrared rays, and more preferably with a wavelength of 9 μm or more, 11μm or less light) and the
又,於一觀點中,反應性聚倍半矽氧烷之重量平均分子量(Mw)較好為500以上、50,000以下,更好為1,000以上、10,000以下。反應性聚倍半矽氧烷之重量平均分子量(Mw)若為500以上、50,000以下,則可較好地溶解於溶劑中,可較好地塗佈於支撐體上。 Moreover, in one viewpoint, the weight average molecular weight (Mw) of the reactive polysilsesquioxane is preferably 500 or more and 50,000 or less, more preferably 1,000 or more and 10,000 or less. If the weight average molecular weight (Mw) of the reactive polysilsesquioxane is 500 or more and 50,000 or less, it can be better dissolved in a solvent and can be better coated on a support.
可作為反應性聚倍半矽氧烷使用之市售品可舉例為例如小西化學工業股份有限公司製之SR-13、SR-21、SR-23及SR-33等。 Commercial products that can be used as reactive polysilsesquioxanes can be, for example, SR-13, SR-21, SR-23, SR-33 manufactured by Konishi Chemical Industry Co., Ltd., and the like.
針對本發明之其他實施形態(實施形態2)說明如下。又,就說明之方便起見,對於具有與前述實施形態中說明之構件相同功能之構件,標註相同符號並省略其說明。實施形態2之密封體之製造方法係依序實施分離層形成步驟、分離層周緣部分去除步驟、接著層形成步驟、密封體形成步驟、接著層去除步驟、光照射步驟、分離步驟及去除步驟。 The other embodiment (Embodiment 2) of the present invention will be explained as follows. In addition, for the convenience of description, members having the same functions as those described in the foregoing embodiment are denoted by the same reference numerals and their description is omitted. The manufacturing method of the sealing body of the second embodiment is to sequentially perform the separation layer forming step, the separation layer peripheral part removal step, the subsequent layer forming step, the sealing body forming step, the subsequent layer removing step, the light irradiation step, the separating step, and the removing step.
(分離層形成步驟~接著層形成步驟) (Separation layer formation step ~ next layer formation step)
如圖2之(a)~(c)所示,分離層形成步驟、分離層周緣部分去除步驟及接著層形成步驟,由於與實施形態1同樣,故省略其說明。 As shown in (a) to (c) of FIG. 2, the separation layer forming step, the separation layer peripheral part removal step, and the subsequent layer forming step are the same as in the first embodiment, so their description is omitted.
(密封體形成步驟) (Steps of forming a sealing body)
如圖2之(d)~(g)所示,密封體形成步驟中,於接著層3上形成密封體7。本實施形態中之密封體形成步驟係依序進行元件配置步驟、密封步驟、薄化步驟及配線層形成步驟。
As shown in (d) to (g) of FIG. 2, in the sealing body forming step, the sealing
如圖2之(d)所示,於元件配置步驟中,於接著
層3上配置元件5。對接著層3上配置元件5可使用例如晶片安裝器等進行。
As shown in Figure 2(d), in the component placement step, in the following
如圖2之(e)所示,於密封步驟中,以密封材6密封元件5。密封材6例如可使用成型模予以射出成型,亦可藉由旋轉塗佈、浸漬、輥刀、噴霧塗佈、狹縫塗佈等方法進行塗佈。
As shown in FIG. 2(e), in the sealing step, the sealing
如圖2之(f)所示,於薄化步驟中,使密封材6薄化。密封材6例如只要薄化至使元件5之端子部自密封材6露出即可。
As shown in FIG. 2(f), in the thinning step, the sealing
如圖2之(g)所示,於配線層形成步驟中,於由密封材6密封之元件5上形成配線層4。
As shown in FIG. 2(g), the
一實施形態中,作為配線層4之形成順序,首先,於由密封材6密封之元件5上形成氧化矽(SiOx)、感光性樹脂等之介電體層。由氧化矽所成之介電體層可藉由例如濺鍍法、真空蒸鍍法等形成。由感光性樹脂所成之介電體層可藉由例如旋轉塗佈、浸漬、輥刀、噴霧塗佈、狹縫塗佈等方法塗佈感光性樹脂而形成。
In one embodiment, as a procedure for forming the
接著,於介電體層上,由金屬等之導電體形成配線。作為配線之形成方法,可使用例如光微影(阻劑微影)等之微影處理、蝕刻處理等之習知半導體製程方法。 Next, on the dielectric layer, wiring is formed from a conductor such as metal. As a method for forming wiring, conventional semiconductor manufacturing methods such as photolithography (resist lithography), lithography processing, etching processing, and the like can be used.
由以上,可於支撐體1上,順利良好地形成密封體7。本實施形態中,與實施形態1同樣,由於分離層2由接著層3保護,故可避免藥液接觸分離層2。且藉由接著
層3保護分離層2,亦可保護分離層2免受藥液以外之影響。藉此,於密封體形成步驟中,可防止分離層2剝落。
From the above, the sealing
且,由以上步驟所得之圖2之(g)所示之層合體9係使光可透過之支撐體1、藉由照射光而變質之分離層2、接著層3與密封體7依序層合而成,密封體7具備配線層4、安裝於配線層4之元件5、密封元件5之密封材6,分離層2於與支撐體1接觸之部分以外,由接著層3被覆者。如此層合體9係僅於本發明之密封體製造方法之過程中製造者,故而可較好地利用以製造單離之密封體7。
In addition, the laminated body 9 shown in (g) of FIG. 2 obtained by the above steps is a
(接著層去除步驟~去除步驟) (Next layer removal step~removal step)
如圖2之(h)~(k)所示,接著層去除步驟、光照射步驟、分離步驟及去除步驟雖密封體7之上下方向之朝向不同,但其他部分與實施形態1相同,故省略其說明。
As shown in Figure 2 (h) ~ (k), the subsequent layer removal step, light irradiation step, separation step, and removal step have different directions in the upper and lower directions of the sealing
由以上,與實施形態1相同,可獲得單離之密封體7。且再者,亦可對密封體7進行焊球形成、切割處理等之處理。又,於密封體7上亦可層合其他元件。
From the above, in the same manner as in the first embodiment, a
且,與實施形態1同樣,(i)藉由使密封體7之成形用模之外徑小於支撐體1,而成形比支撐體1外徑小之密封體7,或(ii)於密封體7成形後,亦可對密封體7進行全切修整以使其小於支撐體1之外徑。
And, as in the first embodiment, (i) by making the outer diameter of the molding die of the sealing
本發明不限定於上述各實施形態者,於申請專利範圍所示之範圍內可進行各種變更,適當組合不同實施形態中分別揭示之技術手段所得之實施形態亦包含於本 發明之技術範圍。 The present invention is not limited to the above-mentioned embodiments, and various changes can be made within the scope of the patent application. The embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in this The technical scope of the invention.
本發明之支撐體分離方法可較好地利用於微細化之半導體裝置之製造步驟。 The support separation method of the present invention can be better used in the manufacturing steps of miniaturized semiconductor devices.
1‧‧‧支撐體 1‧‧‧Support
1a‧‧‧平面部 1a‧‧‧Plane
1b‧‧‧周緣部分 1b‧‧‧peripheral part
2‧‧‧分離層 2‧‧‧Separation layer
2a‧‧‧外周端部 2a‧‧‧peripheral end
3‧‧‧接著層 3‧‧‧Next layer
4‧‧‧配線層 4‧‧‧Wiring layer
5‧‧‧元件 5‧‧‧Component
6‧‧‧密封材 6‧‧‧Sealing material
7‧‧‧密封體 7‧‧‧Sealing body
8‧‧‧層合體 8‧‧‧Laminated body
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016099971A JP6691816B2 (en) | 2016-05-18 | 2016-05-18 | Method for manufacturing sealed body |
JP2016-099971 | 2016-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201804540A TW201804540A (en) | 2018-02-01 |
TWI734767B true TWI734767B (en) | 2021-08-01 |
Family
ID=60416648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106111190A TWI734767B (en) | 2016-05-18 | 2017-03-31 | A sealing body manufacturing method, and a laminate |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6691816B2 (en) |
KR (1) | KR102390526B1 (en) |
TW (1) | TWI734767B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7004566B2 (en) * | 2017-12-28 | 2022-01-21 | 東京応化工業株式会社 | Laminates and their manufacturing methods, as well as electronic component manufacturing methods |
JP6991673B2 (en) * | 2018-02-27 | 2022-01-12 | 株式会社ディスコ | Peeling method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201410832A (en) * | 2012-07-23 | 2014-03-16 | Tokyo Ohka Kogyo Co Ltd | Laminate and laminate manufacturing method |
WO2014050662A1 (en) * | 2012-09-28 | 2014-04-03 | 日東電工株式会社 | Method for manufacturing semiconductor device and bonding sheet |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4487883B2 (en) * | 2005-08-03 | 2010-06-23 | パナソニック株式会社 | Manufacturing method of electronic component built-in module |
TWI419091B (en) * | 2009-02-10 | 2013-12-11 | Ind Tech Res Inst | Appratus for a transferrable flexible electronic device and method for fabricating a flexible electronic device |
JP5189665B2 (en) | 2010-08-09 | 2013-04-24 | 株式会社ディスコ | Wafer level package structure and manufacturing method thereof |
JP5803276B2 (en) | 2011-05-26 | 2015-11-04 | 富士通株式会社 | Manufacturing method of semiconductor device |
JP5810957B2 (en) | 2012-02-17 | 2015-11-11 | 富士通株式会社 | Semiconductor device manufacturing method and electronic device manufacturing method |
JP2014090123A (en) * | 2012-10-31 | 2014-05-15 | Nitto Denko Corp | Method for manufacturing semiconductor device and adhesive sheet |
JP6132425B2 (en) * | 2013-02-28 | 2017-05-24 | 東レエンジニアリング株式会社 | Method for equalizing electrode height of wiring board and method for manufacturing wiring board using the same |
WO2015199030A1 (en) * | 2014-06-26 | 2015-12-30 | 凸版印刷株式会社 | Wiring board, semiconductor device and method for manufacturing semiconductor device |
-
2016
- 2016-05-18 JP JP2016099971A patent/JP6691816B2/en active Active
-
2017
- 2017-03-29 KR KR1020170040093A patent/KR102390526B1/en active IP Right Grant
- 2017-03-31 TW TW106111190A patent/TWI734767B/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201410832A (en) * | 2012-07-23 | 2014-03-16 | Tokyo Ohka Kogyo Co Ltd | Laminate and laminate manufacturing method |
WO2014050662A1 (en) * | 2012-09-28 | 2014-04-03 | 日東電工株式会社 | Method for manufacturing semiconductor device and bonding sheet |
Also Published As
Publication number | Publication date |
---|---|
KR20170130279A (en) | 2017-11-28 |
JP2017208453A (en) | 2017-11-24 |
KR102390526B1 (en) | 2022-04-25 |
TW201804540A (en) | 2018-02-01 |
JP6691816B2 (en) | 2020-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI607877B (en) | Supporting member separation method | |
TWI669214B (en) | Method for manufacturing laminate, method for manufacturing sealed substrate laminate, sealed substrate laminate, and sealed substrate | |
JP6088230B2 (en) | Method for forming laminate | |
TWI673762B (en) | Support separating device and support separating method | |
TWI720004B (en) | Substrate separating method | |
TWI596182B (en) | Method for processing mold material and method for manufacturing structural body | |
TWI713684B (en) | Adhesive composition, laminate, and method for manufacturing laminate | |
TWI734767B (en) | A sealing body manufacturing method, and a laminate | |
JP6214182B2 (en) | Substrate processing method | |
TW202044377A (en) | Method for manufacturing electronic component, and kit | |
JP6006569B2 (en) | Laminate and method for producing laminate | |
JP6162976B2 (en) | Substrate processing method | |
TWI816800B (en) | Manufacturing method of laminate, laminate, and method of manufacturing electronic device | |
TWI752230B (en) | Manufacturing method of laminated body, manufacturing method of electronic device, laminated body, and laminated body manufacturing system | |
JP6244183B2 (en) | Processing method | |
JP6055354B2 (en) | Substrate processing method | |
JP2015046515A (en) | Method of manufacturing laminate and laminate | |
JP7004566B2 (en) | Laminates and their manufacturing methods, as well as electronic component manufacturing methods | |
TWI853898B (en) | Substrate cleaning method, substrate cleaning device and substrate cleaning kit | |
TWI628707B (en) | Method for treatment | |
TW202045269A (en) | Substrate cleaning method, substrate cleaning device, and substrate cleaning kit can remove the residue of a separation layer from a substrate after separating a supporting body | |
JP2015046514A (en) | Method of manufacturing laminate and laminate |