WO2014050662A1

WO2014050662A1 - Method for manufacturing semiconductor device and bonding sheet

Info

Publication number: WO2014050662A1
Application number: PCT/JP2013/075171
Authority: WO
Inventors: 宇圓田　大介; 石井　淳
Original assignee: 日東電工株式会社
Priority date: 2012-09-28
Filing date: 2013-09-18
Publication date: 2014-04-03
Also published as: TW201417162A

Abstract

The purpose of the present invention is to provide a method for manufacturing a semiconductor device, which is capable of easily manufacturing a semiconductor device in cases where the semiconductor device is manufactured by mounting a workpiece on a wiring line that has been formed on a supporting base and then separating the workpiece with the wiring line from the supporting base. This method for manufacturing a semiconductor device comprises: a step for preparing a bonding sheet which has a first adhesive layer and a second layer that exhibits lower adhesion to a supporting base than the first adhesive layer after bonding, with at least the peripheral portion thereof being formed of the first adhesive layer; a step for bonding the bonding sheet to the supporting base, while using the lower surface as a bonding surface; a step for forming a wiring line on the bonding sheet that has been bonded to the supporting base; a step for mounting a workpiece on the wiring line; and a step for separating the workpiece with the wiring line from the supporting base after the mounting.

Description

Semiconductor device manufacturing method and adhesive sheet

The present invention relates to a method for manufacturing a semiconductor device and an adhesive sheet.

Conventionally, in a semiconductor device manufacturing process, after a device is temporarily fixed on a pedestal, a predetermined process is performed on the device, and then a pedestal is separated (for example, Patent Document 1, Patent Document 2).

In Patent Document 1, a device wafer as a first substrate and a carrier substrate as a second substrate are pressure-bonded through a filling layer that does not form a strong adhesive bond, and a bonding material is filled into the periphery of the filling layer. A method of forming an edge bond by curing and bonding the first substrate and the second substrate is disclosed. Patent Document 1 discloses that a desired processing step is performed in a state where the first substrate and the second substrate are bonded, and then the first substrate and the second substrate are separated. In the separation, first, the first substrate and the second substrate are separated by dissolving the edge bond in a solvent or laser cutting and then applying a low mechanical force.

Patent Document 2 discloses a bonding composition layer containing a compound selected from the group consisting of oligomers and polymers, selected from the group consisting of polymers and oligomers of imides, amidoimides and amidoimide-siloxanes. A laminated body formed by bonding the first substrate and the second substrate, exposing the laminated body to a temperature sufficient to soften the bonding layer, and A method for bonding a wafer including separating a second substrate is disclosed.

On the other hand, conventionally, as a method for connecting (mounting) a chip to an external wiring, a method (for example, flip chip bonding) in which a specific portion of the wiring is made to correspond to an electrode position of the chip and the both are connected is used. ing. External wiring is wiring formed separately from the chip, such as wiring formed on a package circuit board that is sealed together with the chip, or a general circuit board on which many other elements are mounted. is there. In some cases, a flexible printed circuit board with contacts called an interposer is interposed between the chip and the package circuit board.

The flexible printed circuit board such as the interposer as described above is not easy to handle in the manufacturing process such as chip mounting because of its flexible nature. Therefore, conventionally, first, a flexible printed circuit board is formed on a metal support board to obtain a wired circuit board having appropriate rigidity, and chip mounting is performed with improved handling in the process. A method of removing a metal support substrate after a certain chip is mounted is used.

Conventionally, as described above, a flexible printed circuit board is formed on a metal support substrate, and after the chip is mounted, the metal support substrate is removed. Here, the metal support substrate and the printed circuit board are formed as an integral inseparable laminate, and etching is used to remove the metal support substrate after chip mounting. However, since there is a process of removing the metal support substrate by etching, the manufacturing process such as application and removal of the resist is complicated, and the manufacturing cost is also high.

Special table 2011-510518 gazette Special table 2010-53385 gazette

Therefore, there has been considered a method in which the metal supporting board and the printed circuit board are bonded using a filling layer and an edge bond as disclosed in Patent Document 1 and are peeled after chip mounting. Moreover, the metal support board | substrate and the wiring circuit board were adhere | attached through the composition layer for joining which is disclosed by patent document 2, and the method of peeling after chip mounting was considered.

The filling layer described in Patent Document 1 and the bonding composition layer described in Patent Document 2 are formed by applying a solution-like material to one substrate by spin coating or the like. However, when a layer having a thickness of about 100 μm necessary for adhesion is formed by coating, there is a problem that the coated surface generally becomes rough and a desired adhesion force may not be obtained. In particular, when applying by spin coating, most of the material scatters out of the substrate, causing a problem that the material is wasted. Further, since the material has a high viscosity for bonding, there is a problem that it takes labor to remove the contamination of the spin coater due to the scattered material.

The inventors of the present application have found that the above-mentioned problems can be solved by adopting the following configuration, and have completed the present invention.

That is, the method for manufacturing a semiconductor device according to the first aspect of the present invention is a method for manufacturing a semiconductor device having a structure in which a work is mounted on a wiring.
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, wherein at least a peripheral portion of the adhesive sheet is the first adhesive A step of preparing an adhesive sheet formed by the agent layer;
Bonding the adhesive sheet to a pedestal;
Forming a wiring on the adhesive sheet after being bonded to the pedestal;
Mounting a workpiece on the wiring;
Separating the work with wiring from the pedestal after the mounting.

According to the said structure, an adhesive sheet is bonded together to a base, and wiring is formed on the said adhesive sheet after bonding to the said base. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the said adhesive sheet is a sheet form, it can be simply used only by bonding together to a base. In addition, since a sheet-like adhesive sheet is used, the material is not wasted like spin coating. Further, since the adhesive sheet is separately prepared, it is possible to prepare a sheet having a uniform sheet surface. As described above, according to the above configuration, the sheet-like adhesive sheet is used when the semiconductor device is manufactured by separating the workpiece with wiring from the pedestal after mounting the workpiece on the wiring formed on the pedestal. The semiconductor device can be easily manufactured without wasting materials.
Moreover, according to the said structure, as an adhesive sheet, it is an adhesive sheet which has a 1st adhesive bond layer and a 2nd layer with low adhesive force after affixing on a base rather than the said 1st adhesive bond layer, An adhesive sheet in which at least a peripheral portion of the adhesive sheet is formed by the first adhesive layer is used. Since the first adhesive layer having higher adhesive strength than the second layer is present in the peripheral portion, it can be firmly bonded to the pedestal and the wiring in this portion. Moreover, since it has not only the 1st adhesive bond layer but the 2nd layer whose adhesive force is lower than the 1st adhesive bond layer, if only the adhesive force of the 1st adhesive bond layer falls in the process of isolate | separating, external force Thus, the base and the work with wiring can be easily separated in the vertical direction. As a method for reducing the adhesive strength of the first adhesive layer, a method of reducing the adhesive strength by dissolving the first adhesive layer with a solvent, a physical cutting with a cutter, laser or the like in the first adhesive layer. Examples thereof include a method for reducing the adhesive strength by heating, a method for forming the first adhesive layer from a material whose adhesive strength is reduced by heating, and a method for reducing the adhesive strength by heating. In the above configuration, since the first adhesive layer is formed in the peripheral portion of the adhesive sheet, in the separating step, the first adhesive layer is dissolved by a solvent, or physically cut by a cutter, a laser, or the like. It is easy to reduce the adhesive strength of the first adhesive layer. In the first aspect of the present invention, the adhesive strength of the first adhesive layer and the adhesive strength of the second layer after being attached to the pedestal are the conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min. It refers to the 90 ° peel peel force for the silicon wafer below. For example, when the adhesive force of the first adhesive layer or the second layer changes before and after being applied to the pedestal by applying imidization or thermosetting after being applied to the pedestal, the adhesive was applied to the pedestal. The 90 ° peel peel force of the first adhesive layer and the second layer on the silicon wafer in a later state (for example, after imidization or after thermosetting). In the first aspect of the present invention, the work refers to a wafer on which a circuit is not formed, a wafer on which a circuit is formed, an individual wafer on which no circuit is formed, and a semiconductor chip (a circuit is formed). Separated wafers). Especially, it is preferable that the workpiece | work of 1st this invention is the wafer or semiconductor chip separated into pieces in which the circuit is not formed. In addition, the wafer and the semiconductor chip which are separated into pieces with no circuit formed are also called chip-shaped workpieces.

In the above configuration, the adhesive sheet is formed such that a central portion inside the peripheral portion is formed by stacking the first adhesive layer and the second layer, and the step of bonding to the pedestal includes the step of It is preferable that the adhesive sheet is a step of bonding to the pedestal with the surface on the side where the second layer is exposed as the bonding surface. According to the said structure, the wiring formed on the adhesive sheet can be fixed more firmly in the surface which only the 1st adhesive bond layer has exposed. The central portion is formed by stacking the first adhesive layer and the second layer. Accordingly, the central portion formed by stacking the first adhesive layer and the second layer has a relatively lower adhesive force than the peripheral portion formed only by the first adhesive layer. Therefore, if the adhesive force of the peripheral part is reduced at least, the pedestal and the work with wiring can be easily separated vertically by external force. Further, since the second layer is also in contact with the pedestal, the adhesive sheet is easily peeled off from the pedestal after the separation step. Therefore, it becomes easy to reuse the pedestal.

In the above-described configuration, it is also preferable that the adhesive sheet is formed by the second layer at a central portion inside the peripheral portion. According to the said structure, since the center part is formed with the said 2nd layer, if the adhesive force of a 1st adhesive bond layer is reduced in the process of isolate | separating, it will be easily attached with a base and wiring by external force. It is possible to separate the workpiece from the top and bottom. Moreover, since the center part is formed with the said 2nd layer and the 2nd layer is also in contact with the base, it becomes easy to peel the said adhesive sheet from a base after the process to isolate | separate. Therefore, it becomes easy to reuse the pedestal.

In the above configuration, the adhesive sheet is formed such that a central portion inside the peripheral portion is formed by stacking the first adhesive layer and the second layer, and the step of bonding to the pedestal includes the step of It is preferable that the adhesive sheet is a step of bonding to the pedestal with the surface on the side where only the first adhesive layer is exposed as the bonding surface. According to the said structure, in the surface which only the 1st adhesive bond layer has exposed, it can fix firmly with a base. The central portion is formed by stacking the first adhesive layer and the second layer. Accordingly, the central portion formed by stacking the first adhesive layer and the second layer has a relatively lower adhesive force than the peripheral portion formed only by the first adhesive layer. Therefore, if the adhesive force of the peripheral part is reduced at least, the pedestal and the work with wiring can be easily separated vertically by external force.

Further, the adhesive sheet according to the first aspect of the present invention is used in the method for manufacturing a semiconductor device described above in order to solve the above-described problems.

A 2-1 semiconductor device manufacturing method according to the present invention is a method for manufacturing a semiconductor device having a structure in which a work is mounted on a wiring.
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, the peripheral portion of the adhesive sheet being the first adhesive A step of preparing an adhesive sheet that is formed of a layer, and a central portion inside the peripheral portion is formed of the second layer;
Bonding the adhesive sheet to a pedestal;
Forming a wiring on the adhesive sheet;
Mounting a workpiece on the wiring;
And a step of separating the work with wiring from the pedestal by cutting from the work side until reaching the center of the adhesive sheet after the mounting.

According to the said structure, an adhesive sheet is bonded together to a base, and wiring is formed on the said adhesive sheet after bonding to the said base. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the said adhesive sheet is a sheet form, it can be simply used only by bonding together to a base. In addition, since a sheet-like adhesive sheet is used, the material is not wasted like spin coating. Further, since the adhesive sheet is separately prepared, it is possible to prepare a sheet having a uniform sheet surface. As described above, according to the above configuration, the sheet-like adhesive sheet is used when the semiconductor device is manufactured by separating the workpiece with wiring from the pedestal after mounting the workpiece on the wiring formed on the pedestal. The semiconductor device can be easily manufactured without wasting materials.
In addition, since the peripheral portion of the adhesive sheet is formed by the first adhesive layer, and the central portion inside the peripheral portion is formed by the second layer, the workpiece is mounted on the wiring. When the cut is made from the workpiece side until reaching the central portion of the adhesive sheet, the pedestal and the workpiece with wiring face each other only through the second layer. As a result, in the step of separating, the base and the work with wiring can be easily separated vertically by external force. In the second aspect of the present invention, the adhesive strength of the first adhesive layer and the adhesive strength of the second layer after being attached to the pedestal are the conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min. This refers to the 90 ° peel peel force for the silicon wafer below. For example, when the adhesive force of the first adhesive layer or the second layer changes before and after being applied to the pedestal by applying imidization or thermosetting after being applied to the pedestal, the adhesive was applied to the pedestal. The 90 ° peel peel force of the first adhesive layer and the second layer on the silicon wafer in a later state (for example, after imidization or after thermosetting). In the second aspect of the present invention, the work refers to a wafer on which a circuit is not formed, a wafer on which a circuit is formed, an individual wafer on which no circuit is formed, and a semiconductor chip (a circuit is formed). Separated wafers). Especially, it is preferable that the workpiece | work of 2nd this invention is the wafer or semiconductor chip separated into pieces in which the circuit is not formed. In addition, the wafer and the semiconductor chip which are separated into pieces with no circuit formed are also called chip-shaped workpieces.

A 2-2 manufacturing method of a semiconductor device according to the present invention is a manufacturing method of a semiconductor device having a structure in which a work is mounted on wiring,
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, the peripheral portion of the adhesive sheet being the first adhesive A step of preparing an adhesive sheet that is formed by a layer, and a central portion inside the peripheral portion is formed by stacking the first adhesive layer and the second layer;
Bonding the adhesive sheet to a pedestal with the surface on the side where only the first adhesive layer is exposed as a bonding surface;
Forming a wiring on the adhesive sheet;
Mounting a workpiece on the wiring;
Separating the work with wiring from the pedestal by cutting the adhesive sheet from the work side until reaching the first adhesive layer at the center after the mounting. It is characterized by.

According to the said structure, an adhesive sheet is bonded together to a base, and wiring is formed on the said adhesive sheet after bonding to the said base. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the said adhesive sheet is a sheet form, it can be simply used only by bonding together to a base. In addition, since a sheet-like adhesive sheet is used, the material is not wasted like spin coating. Further, since the adhesive sheet is separately prepared, it is possible to prepare a sheet having a uniform sheet surface. As described above, according to the above configuration, the sheet-like adhesive sheet is used when the semiconductor device is manufactured by separating the workpiece with wiring from the pedestal after mounting the workpiece on the wiring formed on the pedestal. The semiconductor device can be easily manufactured without wasting materials.
Further, a peripheral part of the adhesive sheet is formed by the first adhesive layer, and a central part inside the peripheral part is formed by stacking the first adhesive layer and the second layer. Therefore, after mounting a work on the wiring, when cutting into the adhesive sheet from the work side until reaching the first adhesive layer in the center, the pedestal and the work with wiring, It will oppose only through the lamination | stacking part of a said 1st contact bonding layer and a said 2nd layer. At this time, the first adhesive layer is bonded to the pedestal, and the second layer is in contact with the work with wiring. As a result, in the separation step, it can be easily peeled off at the interface between the second layer and the wiring by an external force. Therefore, it is possible to easily separate the pedestal and the work with wiring vertically.

A 2-3 manufacturing method of a semiconductor device according to the present invention is a manufacturing method of a semiconductor device having a structure in which a work is mounted on a wiring.
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, the peripheral portion of the adhesive sheet being the first adhesive A step of preparing an adhesive sheet that is formed by a layer, and a central portion inside the peripheral portion is formed by stacking the first adhesive layer and the second layer;
Bonding the adhesive sheet to a pedestal with a surface opposite to the surface on which only the first adhesive layer is exposed as a bonding surface;
Forming a wiring on the adhesive sheet;
Mounting a workpiece on the wiring;
A step of separating the workpiece with wiring from the pedestal by cutting the adhesive sheet from the workpiece side until reaching the second layer after the mounting.

According to the said structure, an adhesive sheet is bonded together to a base, and wiring is formed on the said adhesive sheet after bonding to the said base. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the said adhesive sheet is a sheet form, it can be simply used only by bonding together to a base. In addition, since a sheet-like adhesive sheet is used, the material is not wasted like spin coating. Further, since the adhesive sheet is separately prepared, it is possible to prepare a sheet having a uniform sheet surface. As described above, according to the above configuration, the sheet-like adhesive sheet is used when the semiconductor device is manufactured by separating the workpiece with wiring from the pedestal after mounting the workpiece on the wiring formed on the pedestal. The semiconductor device can be easily manufactured without wasting materials.
Further, a peripheral part of the adhesive sheet is formed by the first adhesive layer, and a central part inside the peripheral part is formed by stacking the first adhesive layer and the second layer. Therefore, after mounting the work on the wiring, if the notch is made in the adhesive sheet from the work side until reaching the second layer, the pedestal and the work with wiring are the first adhesive layer. And the second layer are opposed to each other only through the laminated portion. Therefore, in the step of separating, it can be easily peeled off by an external force at the interface between the first adhesive layer and the second layer or the interface between the second layer and the pedestal. Thereafter, the first adhesive layer is peeled from the wiring. As a result, it is possible to easily separate the pedestal and the work with wiring vertically.

Further, the adhesive sheet according to the second aspect of the present invention is used in the method for manufacturing a semiconductor device described above in order to solve the above-described problems.

A semiconductor device manufacturing method according to a third aspect of the present invention is a semiconductor device manufacturing method having a structure in which a work is mounted on a wiring.
A step of preparing an adhesive sheet in which a first adhesive layer and a second layer having a lower adhesive force after being attached to the base than the first adhesive layer are laminated; and a step of attaching the adhesive sheet to the base When,
Forming a wiring on the adhesive sheet after being bonded to the pedestal;
Mounting a workpiece on the wiring;
Separating the work with wiring from the pedestal after the mounting.

According to the said structure, an adhesive sheet is bonded together to a base, and wiring is formed on the said adhesive sheet after bonding to the said base. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the said adhesive sheet is a sheet form, it can be simply used only by bonding together to a base. In addition, since a sheet-like adhesive sheet is used, the material is not wasted like spin coating. Further, since the adhesive sheet is separately prepared, it is possible to prepare a sheet having a uniform sheet surface. As described above, according to the above configuration, the sheet-like adhesive sheet is used when the semiconductor device is manufactured by separating the workpiece with wiring from the pedestal after mounting the workpiece on the wiring formed on the pedestal. The semiconductor device can be easily manufactured without wasting materials.
Moreover, according to the said structure, the adhesive sheet on which the 1st adhesive bond layer and the 2nd layer whose adhesive force is lower than the said 1st adhesive bond layer was laminated | stacked is used. Since the first adhesive layer is present, the wiring or the like can be fixed to the pedestal in the process of forming the wiring, the process of mounting the workpiece, or the like. Moreover, since it has not only the 1st adhesive layer but the 2nd layer whose adhesive strength is lower than the 1st adhesive layer, in the process of separating, the base and the work with wiring can be easily moved up and down by external force. It becomes possible to separate. In the separation step, the first adhesive layer may be separated after reducing the adhesive force. As a method for reducing the adhesive strength of the first adhesive layer, a method of reducing the adhesive strength by dissolving the first adhesive layer with a solvent, a physical cutting with a cutter, laser or the like in the first adhesive layer. Examples thereof include a method for reducing the adhesive strength by heating, a method for forming the first adhesive layer from a material whose adhesive strength is reduced by heating, and a method for reducing the adhesive strength by heating. In the third aspect of the present invention, the adhesive strength of the first adhesive layer and the adhesive strength of the second layer after being attached to the pedestal are the conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min. This refers to the 90 ° peel peel force for the silicon wafer below. For example, when the adhesive force of the first adhesive layer or the second layer changes before and after being applied to the pedestal by applying imidization or thermosetting after being applied to the pedestal, the adhesive was applied to the pedestal. The 90 ° peel peel force of the first adhesive layer and the second layer on the silicon wafer in a later state (for example, after imidization or after thermosetting). In the third aspect of the present invention, the work refers to a wafer on which a circuit is not formed, a wafer on which a circuit is formed, an individual wafer on which no circuit is formed, and a semiconductor chip (a circuit is formed). Separated wafers). Especially, it is preferable that the workpiece | work of 3rd this invention is the wafer or semiconductor chip separated into pieces in which the circuit is not formed. In addition, the wafer and the semiconductor chip which are separated into pieces with no circuit formed are also called chip-shaped workpieces.

In the above configuration, the step of bonding is preferably a step of bonding to the pedestal using the second layer of the adhesive sheet as a bonding surface. If the bonding step is a step of bonding the second layer of the adhesive sheet to the pedestal using the bonding layer as a bonding surface, wiring is formed on the first adhesive agent layer. Therefore, the wiring or the like can be more firmly fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece.

In the above configuration, it is also preferable that the step of bonding is a step of bonding the first adhesive layer of the adhesive sheet to the pedestal as a bonding surface. If the bonding step is a step of bonding the first adhesive layer of the adhesive sheet to the pedestal using the bonding surface as a bonding surface, the first adhesive agent layer is firmly bonded to the pedestal. Therefore, the wiring or the like can be more firmly fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece.

Also, the adhesive sheet according to the third aspect of the present invention is used in the semiconductor device manufacturing method described above in order to solve the above-mentioned problems.

A semiconductor device manufacturing method according to a fourth aspect of the present invention is a method for manufacturing a semiconductor device having a structure in which a work is mounted on a wiring.
The temporary fixing sheet is disposed on the pedestal, and an adhesive layer having higher adhesive force than the temporary fixing sheet is formed between the temporary fixing sheet and the inclined portion of the pedestal end, and the temporary fixing sheet Fixing the seat to the pedestal;
Forming wiring on the temporary fixing sheet fixed to the pedestal;
Mounting a workpiece on the wiring;
And separating the work piece with wiring from the pedestal by separating the adhesive layer from the temporary fixing sheet after the mounting.

According to the above configuration, the temporary fixing sheet is fixed to the pedestal, and the wiring is formed on the temporary fixing sheet after being fixed to the pedestal. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the temporary fixing sheet has a sheet shape, it can be used simply by fixing it to the pedestal. Further, since a sheet-like temporary fixing sheet is used, the material is not wasted like spin coating. Further, since the temporary fixing sheet is prepared separately, it is possible to prepare a sheet with a uniform sheet surface. As described above, according to the above configuration, after a work is mounted on the wiring formed on the pedestal, when the semiconductor device is manufactured by separating the work with wiring from the pedestal, the sheet-like temporary fixing sheet is attached. Therefore, the semiconductor device can be easily manufactured without wasting materials.
Moreover, according to the said structure, while arrange | positioning the sheet | seat for temporary fixing on a base, the adhesive bond layer whose adhesive force is higher than the said temporary fixing sheet between the said sheet | seat for temporary fixing, and the inclined part of a base end part. Then, the temporary fixing sheet is fixed to the pedestal. Since the temporary fixing sheet is fixed to the pedestal mainly by the adhesive layer formed on the inclined portion of the pedestal end, the adhesive layer is separated from the temporary fixing sheet in the separating step. Then, it becomes possible to easily separate the pedestal and the work with the wiring up and down by an external force. As a method of separating the adhesive layer from the temporary fixing sheet, a method of separating the adhesive layer from the temporary fixing sheet by dissolving the adhesive layer with a solvent, and using a cutter or a laser on the temporary fixing sheet A method of physically cutting and separating the adhesive layer from the temporary fixing sheet; forming the adhesive layer with a material whose adhesive strength is reduced by heating; reducing the adhesive strength by heating; Examples thereof include a method of separating the layer from the temporary fixing sheet. In the above configuration, since the adhesive layer is formed on the inclined portion of the pedestal end, in the separating step, the adhesive layer is dissolved by a solvent, or the temporary fixing sheet is removed by a cutter, a laser, or the like. It is easy to reduce the adhesive force of the adhesive layer by physically making a cut. In the fourth aspect of the present invention, the adhesive strength of the adhesive layer and the adhesive strength of the temporary fixing sheet are 90 ° peel to a silicon wafer under conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min. Refers to peeling force. For example, if the adhesive strength of the temporary fixing sheet or adhesive layer changes before and after being applied to the pedestal by applying imidization or thermosetting after being applied to the pedestal, The 90 ° peel release force of the temporary fixing sheet or adhesive layer in a state (for example, after imidization or after thermosetting) to the silicon wafer. In the fourth aspect of the present invention, the work refers to a wafer on which no circuit is formed, a wafer on which a circuit is formed, an individual wafer on which no circuit is formed, and a semiconductor chip (a circuit is formed). Separated wafers). Especially, it is preferable that the workpiece | work of 4th this invention is the wafer or semiconductor chip separated into pieces in which the circuit is not formed. In addition, the wafer and the semiconductor chip which are separated into pieces with no circuit formed are also called chip-shaped workpieces.

In the above configuration, the separating step is a step of separating the work with wiring from the pedestal by making a cut so that the adhesive layer is separated from the temporary fixing sheet after the mounting. It is preferable. This is because a workpiece with wiring can be easily separated from the pedestal because a cut may be made in the temporary fixing sheet.

In the above-described configuration, it is preferable that the separating step is a step of separating the work with wiring from the pedestal by cutting the wiring in a manner in which the wiring is not cut after the mounting. If the cut is made in a manner in which no cut is made in the wiring, it is possible to obtain a device (a work with wiring) in an area substantially the same as the area of the pedestal in plan view.

A semiconductor device manufacturing method according to a fifth aspect of the present invention is a method for manufacturing a semiconductor device having a structure in which a work is mounted on a wiring.
Adhesion of the second adhesive layer having a first adhesive layer and a second layer having a structure having a large number of through-holes and / or a non-woven fabric structure as a skeleton, and pasted on a pedestal A step of preparing an adhesive sheet whose force is lower than the adhesive force of the first adhesive layer; and a step of bonding the adhesive sheet to a pedestal;
Forming a wiring on the adhesive sheet after being bonded to the pedestal;
Mounting a workpiece on the wiring;
Separating the work with wiring from the pedestal after the mounting.

According to the said structure, an adhesive sheet is bonded together to a base, and wiring is formed on the said adhesive sheet after bonding to the said base. Thereafter, a work is mounted on the wiring, and after the mounting, the work with wiring is separated from the pedestal. Since the said adhesive sheet is a sheet form, it can be simply used only by bonding together to a base. In addition, since a sheet-like adhesive sheet is used, the material is not wasted like spin coating. Further, since the adhesive sheet is separately prepared, it is possible to prepare a sheet having a uniform sheet surface. As described above, according to the above configuration, the sheet-like adhesive sheet is used when the semiconductor device is manufactured by separating the workpiece with wiring from the pedestal after mounting the workpiece on the wiring formed on the pedestal. The semiconductor device can be easily manufactured without wasting materials.
Moreover, according to the said structure, a 2nd layer is a layer which has as a frame | skeleton the structure which has many through-holes, and / or a nonwoven fabric-like structure, for example, can be formed with meshes, such as a wire net, a nonwoven fabric, etc. . For this reason, what is necessary is just to prepare the adhesive composition of a 1st adhesive bond layer as an adhesive material in manufacture of an adhesive sheet, and it is not necessary to prepare two types of adhesives, a filling layer and an edge bond like patent document 1. .
Moreover, according to the said structure, the adhesive sheet which has a 1st adhesive bond layer and a 2nd layer whose adhesive force is lower than the said 1st adhesive bond layer is used. Since the first adhesive layer is present, the wiring or the like can be fixed to the pedestal in the process of forming the wiring, the process of mounting the workpiece, or the like. Moreover, since it has not only the 1st adhesive layer but the 2nd layer whose adhesive strength is lower than the 1st adhesive layer, in the process of separating, the base and the work with wiring can be easily moved up and down by external force. It becomes possible to separate. In the separation step, the first adhesive layer may be separated after reducing the adhesive force. As a method for reducing the adhesive strength of the first adhesive layer, a method of reducing the adhesive strength by dissolving the first adhesive layer with a solvent, a physical cutting with a cutter, laser or the like in the first adhesive layer. Examples thereof include a method for reducing the adhesive strength by heating, a method for forming the first adhesive layer from a material whose adhesive strength is reduced by heating, and a method for reducing the adhesive strength by heating. In the fifth aspect of the present invention, the adhesive strength of the first adhesive layer and the adhesive strength of the second layer after being attached to the pedestal are the conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min. This refers to the 90 ° peel peel force for the silicon wafer below. For example, when the adhesive force of the first adhesive layer or the second layer changes before and after being applied to the pedestal by applying imidization or thermosetting after being applied to the pedestal, the adhesive was applied to the pedestal. The 90 ° peel peel force of the first adhesive layer and the second layer on the silicon wafer in a later state (for example, after imidization or after thermosetting). In the fifth aspect of the present invention, the work refers to a wafer on which a circuit is not formed, a wafer on which a circuit is formed, an individual wafer on which a circuit is not formed, and a semiconductor chip (a circuit is formed). Separated wafers). Especially, it is preferable that the workpiece | work of 5th this invention is the wafer or semiconductor chip separated into pieces in which the circuit is not formed. In addition, the wafer and the semiconductor chip which are separated into pieces with no circuit formed are also called chip-shaped workpieces.

In the above-described configuration, it is preferable that the through holes and the porous structure of the nonwoven fabric are filled with an adhesive composition. In this case, the area where the adhesive composition comes into contact with the wiring or the pedestal can be controlled by the opening ratio of the structure having a through-hole or the density of the non-woven structure, and the second layer with low adhesive force can be easily formed. Can be formed.

In the above configuration, it is preferable that at least a peripheral part of the adhesive sheet is formed by the first adhesive layer. Since the peripheral part of the said adhesive sheet is formed of the 1st adhesive bond layer, it can fix favorably in this part.

In the above-described configuration, it is preferable that the adhesive sheet is formed by stacking the first adhesive layer and the second layer at a central portion inside the peripheral portion. According to the said structure, a wiring and a base can be firmly fixed in the surface which consists only of a 1st adhesive bond layer. Wiring and a pedestal can be satisfactorily fixed on the surface having the first adhesive layer and the second layer. Further, since the first adhesive layer is formed in the peripheral portion of the adhesive sheet, it is easy to cut the first adhesive layer or to reduce the adhesive force of the first adhesive layer, and to be easily separated. Can be done.

In the above-described configuration, it is also preferable that the adhesive sheet is formed by the second layer at a central portion inside the peripheral portion. According to the said structure, a wiring and a base can be favorably fixed in the surface which has a 1st adhesive bond layer and a 2nd layer. Further, since the first adhesive layer is formed in the peripheral portion of the adhesive sheet, it is easy to cut the first adhesive layer or to reduce the adhesive force of the first adhesive layer, and to be easily separated. Can be done.

Further, the adhesive sheet according to the fifth aspect of the present invention is used in the semiconductor device manufacturing method described above in order to solve the above-described problems.

According to the present invention, when a work is mounted on the wiring formed on the pedestal and then the work with wiring is separated from the pedestal to manufacture the semiconductor device, the semiconductor device can be easily manufactured.

It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on other embodiment of 1st this invention. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on other embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 1st this invention. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. It is a cross-sectional schematic diagram for demonstrating in detail an example of the manufacturing method of the semiconductor device shown in FIG. FIG. 3 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment of the 2-1 of the present invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device based on one Embodiment of the 2nd this invention. It is a cross-sectional schematic diagram showing an adhesive sheet according to an embodiment of the 2-2 of the present invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 2-2 of this invention. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on one Embodiment of 2-3 of this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on 2nd-3 one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on other embodiment of 3rd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 3rd this invention. It is a cross-sectional schematic diagram which shows a mode that the wiring layer was formed in the adhesive sheet which concerns on other embodiment, and the semiconductor chip was mounted. It is a cross-sectional schematic diagram which shows a mode that the wiring layer was formed in the adhesive sheet which concerns on other embodiment, and the semiconductor chip was mounted. (A) And (b) is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 4th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on other embodiment. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on 1st Embodiment of 5th this invention. It is a top view of the adhesive sheet shown in FIG. It is a top view which shows an example of the structure which has many through-holes. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on 2nd Embodiment of 5th this invention. It is a top view of the adhesive sheet shown in FIG. It is a cross-sectional schematic diagram which shows the adhesive sheet which concerns on 3rd Embodiment of 5th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 5th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 5th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 5th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 5th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 5th this invention. It is a cross-sectional schematic diagram for demonstrating the outline of the manufacturing method of the semiconductor device which concerns on one Embodiment of 5th this invention.

<First Invention>
A manufacturing method of a semiconductor device according to a first aspect of the present invention is a manufacturing method of a semiconductor device having a structure in which a work is mounted on a wiring, and is more pedestal than the first adhesive layer and the first adhesive layer. A step of preparing an adhesive sheet having a second layer having a low adhesive force after being attached, wherein at least a peripheral portion of the adhesive sheet is formed by the first adhesive layer; A step of bonding an adhesive sheet to a pedestal, a step of forming wiring on the adhesive sheet after being bonded to the pedestal, a step of mounting a work on the wiring, and a work with wiring after the mounting And at least a step of separating from the pedestal.

Hereinafter, each process according to an embodiment of the first invention will be described with reference to the drawings. Note that the terms “upper surface”, “lower surface” and the like used in the first aspect of the present invention are only for explaining the positional relationship between layers, and are actually upper and lower of an adhesive sheet or a semiconductor device. It does not limit the attitude. In the following embodiment, the case where the work of the first invention is a semiconductor chip will be described. However, the present invention is not limited to this example, and may be a wafer on which a circuit is not formed. It may be a wafer that has been formed, or may be a wafer that has been separated and has no circuit formed thereon.

[Process for preparing adhesive sheet]
First, an adhesive sheet having a first adhesive layer and a second layer having lower adhesive strength than the first adhesive layer, wherein at least a peripheral portion of the adhesive sheet is formed by the first adhesive layer. Prepare the adhesive sheet.

Here, the adhesive sheet according to the present embodiment will be described. FIG. 1 is a schematic sectional view showing an adhesive sheet according to an embodiment of the first invention. As shown in FIG. 1, the adhesive sheet 5 has a peripheral portion 54 formed of a first adhesive layer 50, and a central portion 53 inside the peripheral portion 54 has a first adhesive layer 50 and a second adhesive layer 50. It is formed by stacking with the layer 51. That is, the adhesive sheet 5 includes a second layer 51 and a first adhesive layer 50 that is laminated on the second layer 51 in such a manner as to cover the upper surface and side surfaces of the second layer 51. The adhesive force of the second layer 51 is lower than the adhesive force of the first adhesive layer 50. The adhesive sheet 5 is bonded to the pedestal with the surface on the side where the second layer 51 is exposed as the bonding surface in the step of bonding to the pedestal.

In the adhesive sheet 5, the first adhesive layer 50 having a higher adhesive strength than that of the second layer 51 is present in the peripheral portion, so that it can be firmly bonded to the pedestal and the wiring in this portion. Moreover, since it has not only the 1st adhesive bond layer 50 but the 2nd layer whose adhesive force is lower than a 1st adhesive bond layer, in the process of isolate | separating later, the adhesive force of the 1st adhesive bond layer 50 is reduced. Then, it becomes possible to easily separate the pedestal and the semiconductor chip with the wiring up and down by an external force.
Further, in the adhesive sheet 5, the wiring formed on the adhesive sheet 50 can be more firmly fixed on the surface where only the first adhesive layer 50 is exposed. The central portion 53 is formed by stacking the first adhesive layer 50 and the second layer 51. Therefore, the central portion 53 formed by stacking the first adhesive layer 50 and the second layer 51 has a relatively higher adhesive strength than the peripheral portion 54 formed only by the first adhesive layer 50. Is low. Therefore, if the adhesive force of the peripheral portion 54 is reduced at least, the pedestal and the semiconductor chip with wiring can be easily separated vertically by an external force. Moreover, since the 2nd layer 51 is also in contact with the base, it becomes easy to peel the said adhesive sheet 5 from a base after the process to isolate | separate. Therefore, it becomes easy to reuse the pedestal. Moreover, since the 1st adhesive bond layer 50 is formed in the peripheral part 54 in the adhesive sheet 5, in the process of isolation | separation mentioned later, the 1st adhesive bond layer 50 is melt | dissolved with a solvent, or it is physically by a cutter, a laser, etc. It is easy to reduce the adhesive force of the first adhesive layer 50 by making a cut in the.

In the present embodiment, the adhesive force of the second layer 51 after being attached to the pedestal is not particularly limited as long as it is lower than the adhesive force of the first adhesive layer 50 after being attached to the pedestal. The 90 ° peel peel force for a silicon wafer under the conditions of ± 2 ° C. and peel rate of 300 mm / min is preferably 0.30 N / 20 mm or less, and more preferably 0.20 N / 20 mm or less. Moreover, the lower limit value of the adhesive force of the second layer 51 is not particularly limited, and is, for example, 0 N / 20 mm or more, but may be 0.001 / 20 mm or more. When the adhesive force of the second layer 51 is 0.30 N / 20 mm or less, the second layer 51 can be easily peeled from the pedestal. On the other hand, the lower the adhesive force of the second layer 51, the easier the peeling from the pedestal.
Further, the adhesive force of the first adhesive layer 50 after being attached to the pedestal is not particularly limited as long as it is higher than the adhesive force of the second layer 51 after being attached to the pedestal, but the temperature is 23 ± 2 ° C. The 90 ° peel peel force for a silicon wafer under the condition of a peel speed of 300 mm / min is preferably 0.30 N / 20 mm or more, and more preferably 0.40 N / 20 mm or more. Moreover, the upper limit of the adhesive force of the 1st adhesive bond layer 50 is not specifically limited, Although it is so preferable that it is large, For example, 30N / 20mm or less, 20N / 20mm or less, etc. can be mentioned. When the adhesive force of the first adhesive layer 50 is 0.30 N / 20 mm or more, the base and the adhesive sheet 5 can be more firmly fixed.

The thickness of the adhesive sheet 5 is preferably 0.1 to 100 μm, and more preferably 0.5 to 25 μm. When the thickness of the adhesive sheet 5 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, when the thickness of the adhesive sheet 5 is 100 μm or less, thickness variations of the adhesive sheet 5 and shrinkage / expansion during heating can be suppressed or prevented, which is advantageous in the process of forming the wiring.

The thickness at the central portion 53 of the first adhesive layer 50 is preferably 0.01 to 99 μm, and more preferably 0.05 to 10 μm.

The thickness of the second layer 51 (thickness at the central portion 53) is preferably 0.09 to 99.9 μm, and more preferably 0.05 to 15 μm.

Since the first adhesive layer generally has a lower elastic modulus than the second layer, the surface tends to swell when the layer is formed. From such a viewpoint, it is preferable to make the first adhesive layer thinner and the second layer thicker. On the other hand, since the first adhesive layer generally has a higher glass transition temperature than the second layer, the first adhesive layer has a large shrinkage when the layer is formed. From such a viewpoint, it is preferable to make the first adhesive layer thick and the second layer thin. Therefore, in the first aspect of the present invention, the thickness of the first adhesive layer and the thickness of the second layer take into consideration both the surface waviness during layer formation and the shrinkage during layer formation. Therefore, it is preferable to select within the above numerical range.

The adhesive sheet according to the first aspect of the present invention is not limited to the adhesive sheet 5 as shown in FIG. 1, and may be an adhesive sheet as shown in FIGS. FIG. 2 is a schematic cross-sectional view showing an adhesive sheet according to another embodiment of the first invention. As shown in FIG. 2, in the adhesive sheet 6, the peripheral portion 64 is formed by the first adhesive layer 60, and the central portion 63 inside the peripheral portion 64 is formed by the second layer 61. . The adhesive force of the second layer 61 is lower than the adhesive force of the first adhesive layer 60.

In the adhesive sheet 6, since the central portion 63 is formed by the second layer 61, if the adhesive force of the first adhesive layer 60 in the peripheral portion 64 is reduced in the separation step described later, the external force causes Thus, it is possible to easily separate the base and the semiconductor chip with wiring vertically.
Moreover, since the center part 63 is formed of the 2nd layer 61 and the 2nd layer 61 is also in contact with the base, it becomes easy to peel the said adhesive sheet 6 from a base after the process to isolate | separate. Therefore, it becomes easy to reuse the pedestal. In addition, since the first adhesive layer 60 is formed in the peripheral portion 64 of the adhesive sheet 6, the first adhesive layer 60 is dissolved by a solvent or physically used by a cutter, a laser, or the like in the separation step described later. It is easy to reduce the adhesive force of the first adhesive layer 60 by making a notch in.

The adhesive force of the second layer 61 after being attached to the pedestal is not particularly limited as long as it is lower than the adhesive force of the first adhesive layer 60 after being attached to the pedestal. The 90 ° peel peel force for a silicon wafer under the condition of a speed of 300 mm / min is preferably 0.30 N / 20 mm or less, and more preferably 0.20 N / 20 mm or less. Moreover, the lower limit value of the adhesive force of the second layer 61 is not particularly limited, and is, for example, 0 N / 20 mm or more, but may be 0.001 / 20 mm or more. When the adhesive force of the second layer 61 is 0.30 N / 20 mm or less, the second layer 61 can be easily peeled from the pedestal. On the other hand, the lower the adhesive strength of the second layer 61, the easier the peeling from the pedestal.
Further, the adhesive force of the first adhesive layer 60 after being attached to the pedestal is not particularly limited as long as it is higher than the adhesive force of the second layer 61 after being attached to the pedestal, but the temperature is 23 ± 2 ° C. The 90 ° peel peel force for a silicon wafer under the condition of a peel speed of 300 mm / min is preferably 0.30 N / 20 mm or more, and more preferably 0.40 N / 20 mm or more. Moreover, the upper limit of the adhesive force of the 1st adhesive bond layer 60 is not specifically limited, Although it is so preferable that it is large, For example, 30N / 20mm or less, 20N / 20mm or less, etc. can be mentioned. When the adhesive force of the first adhesive layer 60 is 0.30 N / 20 mm or more, the base and the adhesive sheet 6 can be more firmly fixed.

The thickness of the adhesive sheet 6 is preferably 0.1 to 100 μm, and more preferably 0.5 to 25 μm. When the thickness of the adhesive sheet 6 is 0.1 μm or more, the adhesive sheet 6 can be easily formed. On the other hand, when the thickness of the adhesive sheet 6 is 100 μm or less, thickness variations of the adhesive sheet 6 and shrinkage / expansion during heating can be suppressed or prevented, which is advantageous in the process of forming the wiring.

FIG. 3 is a schematic sectional view showing an adhesive sheet according to another embodiment of the first invention. As shown in FIG. 3, the adhesive sheet 7 has a peripheral portion 74 formed by the first adhesive layer 70, and a central portion 73 inside the peripheral portion 74 has the first adhesive layer 70 and the second adhesive layer 70. It is formed by stacking with the layer 71. That is, the adhesive sheet 7 includes a second layer 71, a first adhesive layer 70 laminated on the second layer 71 in a manner covering the upper surface (lower surface in FIG. 3) and side surfaces of the second layer 71, and Have The adhesive force of the second layer 71 is lower than the adhesive force of the first adhesive layer 70. In addition, the adhesive sheet 7 is bonded to the pedestal using the surface on the side where the second layer 71 is exposed in the step of bonding to the pedestal as a bonding surface.

In the adhesive sheet 7, the surface on which only the first adhesive layer 70 is exposed can be firmly fixed by the pedestal. The central portion 73 is formed by stacking the first adhesive layer 70 and the second layer 71. Therefore, the central portion 73 formed by the lamination of the first adhesive layer 70 and the second layer 71 is relatively more adhesive than the peripheral portion 74 formed only by the first adhesive layer 70. Is low. Therefore, if the adhesive force of the peripheral portion 74 is reduced at least, the pedestal and the semiconductor chip with wiring can be easily separated vertically by an external force. Moreover, since the 1st adhesive bond layer 70 is formed in the peripheral part 74 in the adhesive sheet 7, in the process of isolate | separating which is mentioned later, the 1st adhesive bond layer 70 is melt | dissolved with a solvent, or it is physically by a cutter, a laser, etc. It is easy to reduce the adhesive strength of the first adhesive layer 70 by making a notch in.

The adhesive force of the second layer 71 after being attached to the pedestal is not particularly limited as long as it is lower than the adhesive force of the first adhesive layer 70 after being attached to the pedestal. The 90 ° peel peel force for a silicon wafer under a speed of 300 mm / min is preferably 0.30 N / 20 mm or less, and more preferably 0.20 N / 20 mm or less. Moreover, the lower limit value of the adhesive force of the second layer 71 is not particularly limited, and is, for example, 0 N / 20 mm or more, but may be 0.001 / 20 mm or more. When the adhesive force of the second layer 71 is 0.30 N / 20 mm or less, the semiconductor chip with wiring can be easily peeled from the second layer in the separation step.
Further, the adhesive force of the first adhesive layer 70 after being attached to the pedestal is not particularly limited as long as it is higher than the adhesive force of the second layer 71 after being attached to the pedestal, but the temperature is 23 ± 2 ° C. The 90 ° peel peel force for a silicon wafer under the condition of a peel speed of 300 mm / min is preferably 0.30 N / 20 mm or more, and more preferably 0.40 N / 20 mm or more. Moreover, the upper limit of the adhesive force of the 1st adhesive bond layer 70 is not specifically limited, Although it is so preferable that it is large, For example, 30N / 20mm or less, 20N / 20mm or less, etc. can be mentioned. When the adhesive force of the first adhesive layer 70 is 0.30 N / 20 mm or more, the base and the adhesive sheet 7 can be more firmly fixed.

The thickness of the adhesive sheet 7 is preferably 0.1 to 100 μm, and more preferably 0.5 to 25 μm. When the thickness of the adhesive sheet 7 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, when the thickness of the adhesive sheet 7 is 100 μm or less, the thickness variation of the adhesive sheet 7 and shrinkage / expansion during heating can be suppressed or prevented, which is advantageous in the process of forming the wiring.

The thickness at the central portion 73 of the first adhesive layer 70 is preferably 0.01 to 99 μm, and more preferably 0.05 to 10 μm.

The thickness of the second layer 71 (thickness at the central portion 73) is preferably 0.09 to 99.9 μm, and more preferably 0.05 to 15 μm.

[Process to attach to the pedestal]
In the following description, the case where the adhesive sheet 5 shown in FIG. 1 is used will be described. 4 to 8 are schematic cross-sectional views for explaining the outline of the manufacturing method of the semiconductor device according to the embodiment of the first aspect of the present invention. After the step of preparing the adhesive sheet 5, the prepared adhesive sheet 5 is bonded to the base 1 with the lower surface of the adhesive sheet 5 as the bonding surface (see FIG. 4). The bonding method is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll. The conditions for pressure bonding are preferably 20 ° C. to 150 ° C., 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, since the first adhesive layer 50 having a higher adhesive force than the second layer 51 is exposed on the lower surface, the adhesive sheet 5 can be firmly bonded to the base 1.

[Process for forming wiring]
Next, on the adhesive sheet 5, the wiring layer 2 having the connecting conductor portion 21 that can be connected to the electrode 31 of the semiconductor chip 3 and the wiring 26 is exposed so that the connecting conductor portion 21 is exposed on the upper surface of the wiring layer 2. (See FIG. 5). The wiring layer 2 has an external connection conductor 22 for electrical connection to the outside on the adhesive sheet 5 side. FIG. 5 shows the case where the connecting conductor portion 21 is convexly exposed on the upper surface of the wiring layer 2. In the first aspect of the present invention, the connecting conductor portion is exposed on the upper surface of the wiring layer. The upper surface of the connecting conductor portion may be flush with the upper surface of the wiring layer. In the adhesive sheet 5, since only the first adhesive layer 50 is exposed on the upper surface, the wiring layer formed on the adhesive sheet 50 can be more firmly fixed.

[Process for mounting semiconductor chip]
Next, as shown in FIG. 6, the connection conductor portion 21 of the wiring layer 2 and the electrode 31 of the semiconductor chip 3 are connected, and the semiconductor chip 3 is mounted on the wiring layer 2 (wiring 26). In FIG. 6, the protrusions of the connecting conductor portion 21 and the electrode 31 after mounting are omitted. 6 shows a case where a plurality of semiconductor chips 3 are mounted on the wiring layer 2, the number of semiconductor chips mounted on the wiring layer is not particularly limited, and may be one.

Next, as shown in FIG. 7, resin sealing with a resin 32 is performed so as to cover the semiconductor chip 3 as necessary. As the resin 32 used for resin sealing, a conventionally known one or the like can be appropriately used, and a conventionally known method can also be adopted as a resin sealing method.

[Process to separate from pedestal]
Next, as shown in FIG. 8, the semiconductor chip 3 with the resin-sealed wiring layer 2 is separated from the base 1. Specifically, the base 1 is peeled off together with the adhesive sheet 5 with the surface of the adhesive sheet 5 opposite to the base 1 as an interface. When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. As described above, since the adhesive sheet 5 includes not only the first adhesive layer 50 but also the second layer 51 having a lower adhesive force than the first adhesive layer 50, the adhesive force of the first adhesive layer 50. If it is reduced, the base and the semiconductor chip with the wiring layer can be easily separated from each other by an external force.
The central portion 53 is formed by stacking the first adhesive layer 50 and the second layer 51. Therefore, the central portion 53 formed by stacking the first adhesive layer 50 and the second layer 51 has a relatively higher adhesive strength than the peripheral portion 54 formed only by the first adhesive layer 50. Is low. Therefore, if the adhesive force of the peripheral portion 54 is reduced at least, the base and the semiconductor chip with the wiring layer can be easily separated from each other by an external force. Moreover, since the 1st adhesive bond layer 50 is formed in the peripheral part 54 in the adhesive sheet 5, in the process of isolation | separation mentioned later, the 1st adhesive bond layer 50 is melt | dissolved with a solvent, or it is physically by a cutter, a laser, etc. It is easy to reduce the adhesive force of the first adhesive layer 50 by making a cut in the. As a method of reducing the adhesive force of the first adhesive layer 50, a method of lowering the adhesive force by dissolving the first adhesive layer 50 with a solvent, a physical method such as a cutter or laser is applied to the first adhesive layer 50. Examples thereof include a method of reducing the adhesive force by cutting a slit, a method of forming the first adhesive layer 50 with a material whose adhesive force is reduced by heating, and a method of reducing the adhesive force by heating.

Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 9). In addition, you may give the process of providing a solder ball with respect to the wiring layer 2 which peeled the base 1. FIG.

The outline of the semiconductor device manufacturing method according to this embodiment has been described above. Hereinafter, an example of a method for manufacturing the semiconductor device according to the present embodiment will be described in detail with reference to FIGS. 10 to 17 are schematic cross-sectional views for explaining in detail an example of a method for manufacturing the semiconductor device shown in FIG.

[Preparation of pedestal with adhesive sheet]
First, the base 1 is prepared (refer FIG. 10). The pedestal 1 preferably has a certain strength or more.

The base 1 is not particularly limited, and examples thereof include compound wafers such as silicon wafers, SiC wafers, and GaAs wafers, glass wafers, metal foils such as SUS, 6-4 Alloy, Ni foil, and Al foil. In the case of adopting a round shape in plan view, a silicon wafer or a glass wafer is preferable. Moreover, when it is a rectangle by planar view, a SUS board or a glass plate is preferable.

Moreover, as the base 1, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, etc. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide , Polyphenyl sulphates id, aramid (paper), can be glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, also possible to use paper or the like.

The pedestal 1 may be used alone or in combination of two or more. The thickness of the pedestal is not particularly limited, but is usually about 10 μm to 20 mm, for example.

Next, the adhesive sheet 5 is pasted on the base 1. The adhesive sheet 5 has the 2nd layer 51 and the 1st adhesive bond layer 50 laminated | stacked on the 2nd layer 51 in the aspect which covers the upper surface and side surface of the 2nd layer 51 as already demonstrated.

The adhesive composition constituting the first adhesive layer 50 is not particularly limited as long as it is selected so that the adhesive force of the first adhesive layer 50 is higher than the adhesive force of the second layer 51. Examples of the adhesive composition constituting the first adhesive layer 50 include a polyimide resin having a imide group and a structural unit derived from a diamine having an ether structure at least partially, Examples thereof include polyamic acid as a precursor, a silicone resin, and a combination of a thermoplastic resin and a thermosetting resin.

The polyimide resin can be generally obtained by imidizing (dehydrating and condensing) a polyamic acid that is a precursor thereof. As a method for imidizing the polyamic acid, for example, a conventionally known heat imidization method, azeotropic dehydration method, chemical imidization method and the like can be employed. Of these, the heating imidization method is preferable. When the heat imidization method is employed, it is preferable to perform heat treatment under a nitrogen atmosphere or an inert atmosphere such as a vacuum in order to prevent deterioration of the polyimide resin due to oxidation.

The polyamic acid is charged in an appropriately selected solvent such that an acid anhydride and a diamine (including both a diamine having an ether structure and a diamine not having an ether structure) have a substantially equimolar ratio. Can be obtained by reaction.

The polyimide resin preferably has a structural unit derived from a diamine having an ether structure. The diamine having an ether structure is not particularly limited as long as it is a compound having an ether structure and having at least two terminals having an amine structure. Of the diamines having an ether structure, a diamine having a glycol skeleton is preferable. When the polyimide resin has a structural unit derived from a diamine having an ether structure, particularly a structural unit derived from a diamine having a glycol skeleton, heating the first adhesive layer 50 reduces the adhesive force. be able to. With respect to this phenomenon, the first inventors presume that the ether structure is detached from the resin constituting the first adhesive layer 50 when heated, and the adhesive force is reduced due to the removal. ing.
The ether structure or the glycol skeleton is detached from the resin constituting the first adhesive layer 50. For example, FT-IR (fourier transform infrastructure) before and after heating at 300 ° C. for 30 minutes. Comparison of the spectra), it can be confirmed that the spectrum of 2800 to 3000 cm ⁻¹ decreases before and after heating.

Examples of the diamine having a glycol skeleton include a polypropylene glycol structure and a diamine having one amino group at each end, a polyethylene glycol structure, and one amino group at each end. Examples thereof include a diamine having a polytetramethylene glycol structure and a diamine having an alkylene glycol such as a diamine having one amino group at each end. Moreover, the diamine which has two or more of these glycol structures and has one amino group in both the ends can be mentioned.

The molecular weight of the diamine having an ether structure is preferably within the range of 100 to 5000, and more preferably 150 to 4800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5000, it is easy to obtain the first adhesive layer 50 having high adhesive strength at low temperature and exhibiting peelability at high temperature.

For forming the polyimide resin, a diamine having no ether structure can be used in combination with a diamine having an ether structure. Examples of the diamine having no ether structure include aliphatic diamines and aromatic diamines. By using a diamine having no ether structure in combination, the adhesion with the adherend can be controlled. The mixing ratio of the diamine having an ether structure and the diamine having no ether structure is preferably in the range of 100: 0 to 10:90, more preferably 100: 0 to 20: 80, more preferably 99: 1 to 30:70. When the mixing ratio of the diamine having an ether structure and the diamine having no ether structure is in the range of 100: 0 to 10:90 in terms of molar ratio, the thermal peelability at high temperature is excellent.

Examples of the aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxa-1,12-diaminododecane, , 3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane (α, ω-bisaminopropyltetramethyldisiloxane) and the like. The molecular weight of the aliphatic diamine is usually 50 to 1,000,000, preferably 100 to 30,000.

Examples of the aromatic diamine include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, and 4,4′-diaminodiphenylpropane. 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) -2,2- Dimethylpropane, 4,4'-diaminobenzophenone, etc. It is. The molecular weight of the aromatic diamine is usually 50 to 1000, preferably 100 to 500. The molecular weight of the aliphatic diamine and the molecular weight of the aromatic diamine are values measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene (weight average molecular weight).

Examples of the acid anhydride include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2-bis (2, 3-Dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) methane dianhydride Bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) sulfone Anhydride, pyromellitic dianhydride, ethylene glycol bis trimellitic dianhydride and the like. These may be used alone or in combination of two or more.

Examples of the solvent for reacting the acid anhydride with the diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide, and cyclopentanone. These may be used alone or in combination. Further, in order to adjust the solubility of raw materials and resins, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

Examples of the silicone resin include peroxide cross-linked silicone pressure sensitive adhesive, addition reaction type silicone pressure sensitive adhesive, dehydrogenation reaction type silicone pressure sensitive adhesive, and moisture curable type silicone pressure sensitive adhesive. The said silicone resin may be used individually by 1 type, and may use 2 or more types together. When the silicone resin is used, the heat resistance becomes high, and the storage elastic modulus and adhesive strength at high temperatures can be appropriate values. Among the silicone resins, addition reaction type silicone pressure-sensitive adhesives are preferable in terms of few impurities.

When the silicone resin is used for the first adhesive layer 50, the first adhesive layer 50 may contain other additives as necessary. Examples of such other additives include flame retardants, silane coupling agents, and ion trapping agents. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. Such other additives may be only one kind or two or more kinds.

The composition constituting the second layer 51 is not particularly limited as long as it is selected so that the adhesive force of the second layer 51 is lower than the adhesive force of the first adhesive layer 50. Examples of the material constituting the second layer 51 include inorganic materials such as Cu, Cr, Ni, and Ti.

Further, as the composition constituting the second layer 51, the polyimide resin described as the adhesive composition constituting the first adhesive layer 50 may be used, and the polyamide which is a precursor of the polyimide resin An acid may be used, the silicone resin may be used, or a combination of the thermoplastic resin and the thermosetting resin may be used.

(Manufacture of adhesive sheets)
The adhesive sheet 5 is produced as follows, for example. First, a solution containing a composition for forming the second layer 51 is prepared. Next, the solution is applied to a base material so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form the second layer 51. Examples of the substrate include metal foil such as SUS304, 6-4 alloy, aluminum foil, copper foil, Ni foil, polyethylene terephthalate (PET), polyethylene, polypropylene, fluorine-based release agent, and long-chain alkyl acrylate-type release agent. A plastic film, paper, or the like whose surface is coated with a release agent such as, can be used. Moreover, it does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, spin coat coating etc. are mentioned.

Next, by punching or the like from the second layer 51 side, it is punched into a predetermined shape (for example, circular, rectangular, etc.), leaving a punched portion (second layer 51 of circular shape, rectangular shape, etc.) Remove the outside.

Meanwhile, a solution containing a composition for forming the first adhesive layer 50 is prepared.

Next, a solution containing a composition for forming the first adhesive layer 50 is formed on the substrate on which the second layer 51 punched into a predetermined shape is laminated. A coating film is formed by applying to the side 51 so as to have a predetermined thickness. Thereafter, the coating film is dried under predetermined conditions to form the first adhesive layer 50. From the above, an adhesive sheet 5 as shown in FIG. 1 is obtained. In addition, the adhesive sheet 6 as shown in FIG. 2 and the adhesive sheet 7 as shown in FIG. 3 can be produced by the same method.

[Process to attach to the pedestal]
After the step of preparing the adhesive sheet 5, the prepared adhesive sheet 5 is bonded to the base 1 with the lower surface of the adhesive sheet 5 as the bonding surface (see FIG. 10).

[Formation of wiring layer]
Next, the wiring layer 2 is formed on the adhesive sheet 5 of the base 1. Conventionally known circuit board and interposer manufacturing techniques such as a semi-additive method and a subtractive method may be applied to the method of forming the wiring layer on the base having the adhesive sheet. By forming the wiring layer on the pedestal, the dimensional stability becomes good during the manufacturing process, and the handling property of the thin wiring layer becomes good. Hereinafter, an example of a method for forming a wiring layer will be described. 11 to 17, only the portion corresponding to one semiconductor chip is shown and the others are omitted, but the portions corresponding to other semiconductor chips are the same.

[Formation of base insulating layer]
As shown in FIG. 11, the base insulating layer 20 a is formed on the adhesive sheet 5 of the base 1. The material of the base insulating layer 20a is not particularly limited. For example, polyimide resin, acrylic resin, polyether nitrile resin, polyether sulfone resin, epoxy resin, polyethylene terephthalate resin, polyethylene naphthalate resin, polyvinyl chloride resin, etc. Known synthetic resins, and those resins and synthetic fiber cloths, glass cloths, glass nonwoven cloths, and composite resins of fine particles such as TiO ₂ , SiO ₂ , ZrO ₂ , minerals, and clays. In particular, after the base 1 is peeled off, a polyimide resin, an epoxy resin, and a glass are used from the viewpoint of becoming a flexible insulating layer that is thinner, has higher mechanical strength, and has more preferable electrical characteristics (insulating characteristics, etc.). A cloth composite epoxy resin is mentioned as a preferable material. Among these, those having photosensitivity are preferable. The thickness of the base insulating layer 20a is preferably 0.1 to 50 μm.

Next, an opening h1 is formed at a position where the external connection conductor portion 22 is to be formed (see FIG. 12). As a method for forming the opening h1, a conventionally known method can be employed. For example, when the base insulating layer 20a is formed using a resin having photosensitivity, the opening h1 is formed by irradiating light through a photomask in which a pattern corresponding to the opening h1 is formed and then developing. be able to. The shape of the opening is not particularly limited, but a circular shape is preferable, and the diameter can be appropriately set. For example, it can be set to 1.0 μm to 500 μm.

[Formation of metal film for contact]
Next, a contact metal film 211 is formed in the opening h1. By forming the metal film 211, electrical connection can be performed more favorably and corrosion resistance can be improved. The formation method of the metal film 211 is not particularly limited, but plating is preferable, and the material of the metal film is copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, rhodium, chromium, tungsten, ruthenium, etc. These single metals or alloys composed of two or more of these can be used. Among these, preferable materials include gold, tin, nickel, and the like. A preferable example of the metal film includes a two-layer structure in which the base layer is Ni and the surface layer is Au.

[Formation of seed film, lower conductive path, conductor layer]
Next, if necessary, a seed film (metal thin film) 23a for satisfactorily depositing a metal material is formed on the conductor layer 23 and the wall surface of the portion that should be the conduction path 25 (see FIG. 14). ). The seed film 23a can be formed by sputtering, for example. As a material of the seed film, for example, a single metal such as copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, rhodium, chromium, tungsten, ruthenium, or an alloy composed of two or more of these is used. It is done. The thickness of the conductor layer 23 is not particularly limited, but may be appropriately selected within the range of 1 to 500 nm. Further, the conducting path 25 is preferably a columnar shape, and its diameter is 1.0 to 500 μm, preferably 3.0 to 300 μm. Thereafter, a conductor layer 23 and a conduction path 25 having a predetermined wiring pattern are formed. The wiring pattern can be formed by, for example, electrolytic plating. Thereafter, the seed film in the portion without the conductor layer 23 is removed.

Next, as shown in FIG. 15, the conductor layer 23 is covered with the plating resist r1 (except for the portion where the conduction path is to be formed), and the lower surface of the base 1 is entirely covered with the resist r2. The conductive path 24 is formed by electrolytic plating. The conductor layer 23, the conduction path 24, and the conduction path 25 correspond to the circuit 26 (see FIG. 5).

(Formation of adhesive layer)
Next, the plating resists r1 and r2 are removed, and an adhesive layer 20b mainly composed of epoxy and polyimide is formed so as to bury the exposed conductor layer 23 and the conduction path 24. The upper end surface of the conduction path 24 is The adhesive layer is etched with an alkaline solution or the like so as to be exposed on the upper surface of the adhesive layer as a terminal portion (see FIG. 16).

[Formation of metal film on end face of connecting conductor]
Next, as shown in FIG. 17, the connecting conductor portion 21 is formed on the upper end surface of the conduction path 24 by, for example, electrolytic plating. The connecting conductor portion 21 can be formed of, for example, a nickel film or a gold film.

[Mounting process, peeling process, dicing]
Next, a chip is mounted on the wiring layer 2 obtained above (with the pedestal 1 attached in a peelable manner) (see FIG. 6). Thereafter, aging of the adhesive layer 20b is performed, and further, resin sealing is performed on each chip 3 on the wiring layer 2 as necessary (see FIG. 7). For resin sealing, a sheet-like sealing resin sheet may be used, or a liquid resin sealing material may be used. Thereafter, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1 (see FIG. 8). When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 9). In mounting a chip on the wiring layer 2 (flip chip connection), an underfill resin may be used between the wiring layer 2 and the chip. The underfill resin may be a sheet or a liquid. In the above-described embodiment, the case where the resin sealing is performed after the chip is mounted has been described. Instead of the resin sealing, a conventionally known flip chip type semiconductor back film is formed on the chip. It may be used. The flip chip type semiconductor back film is a film for forming on the back surface of a chip (semiconductor element) flip-chip connected on an adherend. Details are disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-249739. Since it is disclosed, a description thereof is omitted here.

The embodiment according to the first invention has been described above.

<Second Invention>
Hereinafter, the second aspect of the present invention (the 2-1 aspect of the present invention, the 2-2 aspect of the present invention, and the 2-3 aspect of the present invention) will be described while referring to differences from the first aspect of the present invention. The semiconductor device manufacturing method and the adhesive sheet according to the second aspect of the present invention have characteristics and effects other than those described in the section of the second aspect of the present invention. The same characteristics and effects as the adhesive sheet can be exhibited.

A 2-1 manufacturing method of a semiconductor device according to the present invention is a manufacturing method of a semiconductor device having a structure in which a work is mounted on a wiring, and includes a first adhesive layer and a first adhesive layer. An adhesive sheet having a second layer having low adhesive strength after being attached to the pedestal, wherein a peripheral portion of the adhesive sheet is formed by the first adhesive layer, and is located on the inner side of the peripheral portion. A step of preparing an adhesive sheet having a central portion formed by the second layer; a step of bonding the adhesive sheet to a pedestal; a step of forming a wiring on the adhesive sheet; and the wiring It includes at least a step of mounting a workpiece and a step of separating the workpiece with wiring from the pedestal by cutting from the workpiece side until reaching the central portion of the adhesive sheet after the mounting.

Hereinafter, each step according to the embodiment of the 2-1 of the present invention will be described with reference to the drawings. The terms “upper surface”, “lower surface” and the like used in the 2-1 of the present invention are only for explaining the positional relationship between layers, and are actually used for adhesive sheets and semiconductor devices. It does not limit the up and down posture. In the following embodiment, the case where the workpiece of the present invention is a semiconductor chip will be described. However, the present invention is not limited to this example, and a wafer on which a circuit is not formed may be used, and a circuit is formed. It may be a wafer, or may be an individual wafer in which no circuit is formed. FIG. 18 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment of the 2-1 of the present invention. 19 to 25 are schematic cross-sectional views for explaining the outline of the manufacturing method of the semiconductor device according to the embodiment of the 2-1 of the present invention.

[Process for preparing adhesive sheet]
First, an adhesive sheet 6 having a first adhesive layer 60 and a second layer 61 having a lower adhesive force after being attached to the base than the first adhesive layer 60, and a peripheral portion 64 of the adhesive sheet 6. Is formed by the first adhesive layer 60, and the adhesive sheet 6 is prepared in which the central portion 63 inside the peripheral portion 64 is formed by the second layer 61 (see FIG. 18).

In the adhesive sheet 6, the first adhesive layer 60 having a higher adhesive strength than that of the second layer 61 is present in the peripheral portion, so that it can be firmly bonded to the pedestal and the wiring in this portion. In the adhesive sheet 6, since the central portion 63 is formed by the second layer 61, if the adhesive force of the first adhesive layer 60 in the peripheral portion 64 is reduced in the separation step described later, the external force causes Thus, it is possible to easily separate the base and the semiconductor chip with wiring vertically.
Moreover, since the center part 63 is formed of the 2nd layer 61 and the 2nd layer 61 is also in contact with the base, it becomes easy to peel the said adhesive sheet 6 from a base after the process to isolate | separate. Therefore, it becomes easy to reuse the pedestal.
Further, since the peripheral portion 64 of the adhesive sheet 6 is formed by the first adhesive layer 60 and the central portion 63 inside the peripheral portion 64 is formed by the second layer 61, a semiconductor is formed on the wiring. After the chip is mounted, if the notch is made from the semiconductor chip side until reaching the central portion 63 of the adhesive sheet 6, the pedestal and the semiconductor chip with wiring face each other only through the second layer 61. Become. As a result, in the separation step, the base and the semiconductor chip with wiring can be easily separated vertically by external force.

In the present embodiment, the adhesive force of the second layer 61 after being attached to the pedestal is not particularly limited as long as it is lower than the adhesive force of the first adhesive layer 60 after being attached to the pedestal. The 90 ° peel peel force for a silicon wafer under the conditions of ± 2 ° C. and peel rate of 300 mm / min is preferably 0.30 N / 20 mm or less, and more preferably 0.20 N / 20 mm or less. Moreover, the lower limit value of the adhesive force of the second layer 61 is not particularly limited, and is, for example, 0 N / 20 mm or more, but may be 0.001 / 20 mm or more. When the adhesive force of the second layer 61 is 0.30 N / 20 mm or less, the second layer 61 can be easily peeled from the pedestal. On the other hand, the lower the adhesive strength of the second layer 61, the easier the peeling from the pedestal.
Further, the adhesive force of the first adhesive layer 60 after being attached to the pedestal is not particularly limited as long as it is higher than the adhesive force of the second layer 61 after being attached to the pedestal, but the temperature is 23 ± 2 ° C. The 90 ° peel peel force for a silicon wafer under the condition of a peel speed of 300 mm / min is preferably 0.30 N / 20 mm or more, and more preferably 0.40 N / 20 mm or more. Moreover, the upper limit of the adhesive force of the 1st adhesive bond layer 60 is not specifically limited, Although it is so preferable that it is large, For example, 30N / 20mm or less, 20N / 20mm or less, etc. can be mentioned. When the adhesive force of the first adhesive layer 60 is 0.30 N / 20 mm or more, the base and the adhesive sheet 6 can be more firmly fixed.

[Process to attach to the pedestal]
After the step of preparing the adhesive sheet 6, the prepared adhesive sheet 6 is bonded to the base 1 (see FIG. 19). The bonding method is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll. The conditions for pressure bonding are preferably 20 ° C. to 150 ° C., 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, the adhesive sheet 6 can be firmly bonded to the pedestal 1 because the first adhesive layer 60 having a higher adhesive force than the second layer 61 is exposed on the lower surface.

[Process for forming wiring layer]
Next, on the adhesive sheet 6, the wiring layer 2 having the connecting conductor portion 21 and the wiring 26 that can be connected to the electrode 31 of the semiconductor chip 3 is exposed on the upper surface of the wiring layer 2. It forms (refer FIG. 20). The wiring layer 2 has an external connection conductor portion 22 for electrical connection to the outside on the adhesive sheet 6 side. FIG. 20 shows the case where the connecting conductor portion 21 is exposed in a convex shape on the upper surface of the wiring layer 2, but in the 2-1st invention, the connecting conductor portion is the upper surface of the wiring layer. The upper surface of the connecting conductor portion may be flush with the upper surface of the wiring layer. In the adhesive sheet 6, since the first adhesive layer 60 is exposed on the upper surface, the wiring layer 2 formed on the adhesive sheet 6 can be firmly fixed.

[Process for mounting semiconductor chip]
Next, as shown in FIG. 21, the connecting conductor portion 21 of the wiring layer 2 and the electrode 31 of the semiconductor chip 3 are connected, and the semiconductor chip 3 is mounted on the wiring layer 2 (wiring 26). In FIG. 21, the protrusions of the connecting conductor portion 21 and the electrode 31 after mounting are omitted. FIG. 21 shows a case where a plurality of semiconductor chips 3 are mounted on the wiring layer 2, but the number of semiconductor chips mounted on the wiring layer is not particularly limited, and may be one.

Next, as shown in FIG. 22, resin sealing with a resin 32 is performed so as to cover the semiconductor chip 3 as necessary. As the resin 32 used for resin sealing, a conventionally known one or the like can be appropriately used, and a conventionally known method can also be adopted as a resin sealing method.

[Process to separate from pedestal]
Next, as shown in FIG. 23, a notch 65 is made from the semiconductor chip 3 side until the central portion 63 of the adhesive sheet 6 is reached. At this time, the resin 32 and the wiring layer 2 are simultaneously cut. As a result, the base 1 and the semiconductor chip 3 with the wiring layer 2 face each other only through the second layer 61. Thereafter, by applying an external force, the base 1 and the semiconductor chip 3 with the wiring layer 2 are separated vertically as shown in FIG. At this time, since the pedestal 1 and the semiconductor chip 3 with the wiring layer 2 are opposed to each other only through the second layer 61 having a relatively low adhesive force, the pedestal 1 and the wiring layer 2 are easily attached by an external force. The semiconductor chip 3 can be separated vertically. As a method for forming the cut, a conventionally known method or the like can be adopted, and a cutting tool such as a cutter or a high energy beam by a laser or the like can be used.

Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 25). In addition, you may give the process of providing a solder ball with respect to the wiring layer 2 which peeled the base 1. FIG.

The outline of the manufacturing method of the semiconductor device according to the embodiment of the 2-1 of the present invention has been described above. Hereinafter, an example of the manufacturing method of the semiconductor device according to the present embodiment will be described in detail.

[Preparation of pedestal with adhesive sheet]
First, the base 1 is prepared (refer FIG. 19). As the pedestal 1, the one described in the first aspect of the present invention can be used.

Next, the adhesive sheet 6 is bonded onto the base 1 (see FIG. 19). As described above, the peripheral portion 64 of the adhesive sheet 6 is formed of the first adhesive layer 60, and the central portion 63 inside the peripheral portion 64 is formed of the second layer 61.

The adhesive composition constituting the first adhesive layer 60 is not particularly limited as long as it is selected so that the adhesive force of the first adhesive layer 60 is higher than the adhesive force of the second layer 61. Examples of the adhesive composition constituting the first adhesive layer 60 include a polyimide resin having an imide group and a structural unit derived from a diamine having an ether structure at least partially, Examples thereof include polyamic acid as a precursor, a silicone resin, and a combination of a thermoplastic resin and a thermosetting resin.

As the polyimide resin and the silicone resin, those described in the first aspect of the present invention can be used.

When the silicone resin is used for the first adhesive layer 60, the first adhesive layer 60 may contain other additives as necessary. As such other additives, those described in the first aspect of the present invention can be used.

The composition constituting the second layer 61 is not particularly limited as long as it is selected so that the adhesive force of the second layer 61 is lower than the adhesive force of the first adhesive layer 60. Examples of the material constituting the second layer 61 include inorganic materials such as Cu, Cr, Ni, and Ti.

Further, as the composition constituting the second layer 61, the polyimide resin described as the adhesive composition constituting the first adhesive layer 60 may be used, and the polyamide which is a precursor of the polyimide resin An acid may be used, the silicone resin may be used, or a combination of the thermoplastic resin and the thermosetting resin may be used.

(Manufacture of adhesive sheets)
The adhesive sheet 6 is produced as follows, for example. First, a solution containing a composition for forming the second layer 61 is prepared. Next, the solution is applied on a substrate so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to form the second layer 61. Examples of the substrate include metal foil such as SUS304, 6-4 alloy, aluminum foil, copper foil, Ni foil, polyethylene terephthalate (PET), polyethylene, polypropylene, fluorine-based release agent, and long-chain alkyl acrylate-type release agent. A plastic film, paper, or the like whose surface is coated with a release agent such as, can be used. Moreover, it does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, spin coat coating etc. are mentioned.

Next, by punching from the second layer 61 side, etc. by punching into a predetermined shape (for example, circular, rectangular, etc.), leaving a punched portion (second layer 61 of circular shape, rectangular shape, etc.) Remove the outside.

Meanwhile, a solution containing a composition for forming the first adhesive layer 60 is prepared.

Next, a solution containing a composition for forming the first adhesive layer 60 is formed on the base material on which the second layer 61 punched into a predetermined shape is laminated. A coating film is formed by applying a predetermined thickness on the 61 side. Thereafter, the coating film is dried under predetermined conditions to form the first adhesive layer 60. From the above, an adhesive sheet 6 as shown in FIG. 18 is obtained. In addition, the adhesive sheet 7 as shown in FIG. 26 to be described later can also be created by the same method.

[Formation of wiring layer]
Next, the wiring layer 2 is formed on the adhesive sheet 6 of the base 1 (see FIG. 20). As a method for forming the wiring layer on the pedestal having the adhesive sheet, the method described in the first aspect of the present invention can be employed.

[Mounting process, peeling process, dicing]
Next, a chip is mounted on the wiring layer 2 obtained above (with the pedestal 1 attached in a peelable manner) (see FIG. 21). Thereafter, aging of the wiring layer 2 is performed, and further, resin sealing is performed on each chip 3 on the wiring layer 2 as necessary (see FIG. 22). For resin sealing, a sheet-like sealing resin sheet may be used, or a liquid resin sealing material may be used. After that, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1 (see FIG. 24). When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 25). In mounting a chip on the wiring layer 2 (flip chip connection), an underfill resin may be used between the wiring layer 2 and the chip. The underfill resin may be a sheet or a liquid. In the above-described embodiment, the case where the resin sealing is performed after the chip is mounted has been described. Instead of the resin sealing, a conventionally known flip chip type semiconductor back film is formed on the chip. It may be used. The flip chip type semiconductor back film is a film for forming on the back surface of a chip (semiconductor element) flip-chip connected on an adherend. Details are disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-249739. Since it is disclosed, a description thereof is omitted here.

The embodiment according to the 2-1st invention has been described above. Next, the 2-2 of the present invention will be explained.

A method for manufacturing a semiconductor device according to 2-2 of the present invention is a method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring.
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, the peripheral portion of the adhesive sheet being the first adhesive A step of preparing an adhesive sheet that is formed by a layer, and a central portion inside the peripheral portion is formed by stacking the first adhesive layer and the second layer;
Bonding the adhesive sheet to a pedestal with the surface on the side where only the first adhesive layer is exposed as a bonding surface;
Forming a wiring on the adhesive sheet;
Mounting a workpiece on the wiring;
After the mounting, at least a step of separating the work with wiring from the pedestal by cutting the adhesive sheet from the work side until reaching the first adhesive layer in the central portion. .

Hereinafter, each process according to the embodiment of the 2-2 of the present invention will be described with reference to the drawings. However, in the embodiment according to the 2-2 of the present invention described below, the 2-1 book described above except for the step of preparing the adhesive sheet, the step of bonding to the pedestal, and the step of separating from the pedestal. Since it is common with embodiment which concerns on invention, suppose that except the process of preparing an adhesive sheet, the process of bonding to a base, and the process of isolate | separating from a base, it will abbreviate | omit. FIG. 26 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment of the 2-2 of the present invention. FIG. 27 is a schematic cross-sectional view for explaining the outline of the manufacturing method of the semiconductor device according to the embodiment of the 2-2 of the present invention.

[Process for preparing adhesive sheet]
First, an adhesive sheet 7 having a first adhesive layer 70 and a second layer 71 having a lower adhesive force after being attached to the base than the first adhesive layer 70, and a peripheral portion 74 of the adhesive sheet 7. Is formed by the first adhesive layer 70, and an adhesive sheet is prepared in which the central portion 73 inside the peripheral portion 74 is formed by stacking the first adhesive layer 70 and the second layer 71. (See FIG. 26).

Since the first adhesive layer generally has a lower elastic modulus than the second layer, the surface tends to swell when the layer is formed. From such a viewpoint, it is preferable to make the first adhesive layer thinner and the second layer thicker. On the other hand, since the first adhesive layer generally has a higher glass transition temperature than the second layer, the first adhesive layer has a large shrinkage when the layer is formed. From such a viewpoint, it is preferable to make the first adhesive layer thick and the second layer thin. Therefore, in the present invention, the thickness of the first adhesive layer and the thickness of the second layer are determined in consideration of both the surface undulation during the layer formation and the shrinkage during the layer formation. It is preferable to select within a numerical range.

[Process to attach to the pedestal]
After the step of preparing the adhesive sheet 7, the prepared adhesive sheet 7 is bonded to the base 1 with the surface on the side where only the first adhesive layer 70 is exposed as the bonding surface (see FIG. 27).

[Process to separate from pedestal]
In the step of separating from the pedestal, first, a cut 75 is made in the adhesive sheet 7 from the semiconductor chip 3 side until it reaches the first adhesive layer 70 in the central portion 73. At this time, the resin 32 and the wiring layer 2 are simultaneously cut. Thereby, the base 1 and the semiconductor chip 3 with the wiring layer 2 are opposed to each other through only the laminated portion of the first adhesive layer 70 and the second layer 71. At this time, the first adhesive layer 70 is bonded to the base 1, and the second layer 71 is in contact with the semiconductor chip 3 with the wiring layer 2. As a result, in the separation step, the separation can be easily performed at the interface between the second layer 71 and the wiring layer 2 by an external force. Therefore, the semiconductor chip 3 with the wiring layer 2 can be easily separated from the base 1.

The embodiment according to the 2-2 of the present invention has been described above. Next, the second to third aspects of the present invention will be described.

A 2-3 manufacturing method of a semiconductor device according to the present invention is a manufacturing method of a semiconductor device having a structure in which a work is mounted on a wiring,
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, the peripheral portion of the adhesive sheet being the first adhesive A step of preparing an adhesive sheet that is formed by a layer, and a central portion inside the peripheral portion is formed by stacking the first adhesive layer and the second layer;
Bonding the adhesive sheet to a pedestal with a surface opposite to the surface on which only the first adhesive layer is exposed as a bonding surface;
Forming a wiring on the adhesive sheet;
Mounting a workpiece on the wiring;
After the mounting, at least a step of separating the work with wiring from the pedestal by cutting the adhesive sheet from the work side until reaching the second layer.

Hereinafter, each process according to an embodiment of the present invention of 2-3 will be described with reference to the drawings. However, in the second and third embodiments of the present invention described below, the 2-1 book described above, except for the step of preparing the adhesive sheet, the step of bonding to the pedestal, and the step of separating from the pedestal. Since it is common with embodiment which concerns on invention, suppose that except the process of preparing an adhesive sheet, the process of bonding to a base, and the process of isolate | separating from a base, it will abbreviate | omit. FIG. 28 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment of the present invention of 2-3. FIG. 29 is a schematic cross-sectional view for explaining the outline of the manufacturing method of the semiconductor device according to the embodiment of the 2-3 of the present invention.

[Process for preparing adhesive sheet]
First, an adhesive sheet 5 having a first adhesive layer 50 and a second layer 51 having a lower adhesive force after being attached to the base than the first adhesive layer 50, the peripheral portion 54 of the adhesive sheet 5. Is prepared by the first adhesive layer 50, and an adhesive sheet is prepared in which the central portion 53 inside the peripheral portion 54 is formed by stacking the first adhesive layer 50 and the second layer 51. (See FIG. 28).

The adhesive force of the second layer 51 after being attached to the pedestal is not particularly limited as long as it is lower than the adhesive force of the first adhesive layer 50 after being attached to the pedestal. The 90 ° peel peel force for a silicon wafer under a speed of 300 mm / min is preferably 0.30 N / 20 mm or less, and more preferably 0.20 N / 20 mm or less. Moreover, the lower limit value of the adhesive force of the second layer 51 is not particularly limited, and is, for example, 0 N / 20 mm or more, but may be 0.001 / 20 mm or more. When the adhesive force of the second layer 51 is 0.30 N / 20 mm or less, the second layer 51 can be easily peeled from the base 1 or the first adhesive layer 50 in the separation step.
Further, the adhesive force of the first adhesive layer 50 after being attached to the pedestal is not particularly limited as long as it is higher than the adhesive force of the second layer 51 after being attached to the pedestal, but the temperature is 23 ± 2 ° C. The 90 ° peel peel force for a silicon wafer under the condition of a peel speed of 300 mm / min is preferably 0.30 N / 20 mm or more, and more preferably 0.40 N / 20 mm or more. Moreover, the upper limit of the adhesive force of the 1st adhesive bond layer 50 is not specifically limited, Although it is so preferable that it is large, For example, 30N / 20mm or less, 20N / 20mm or less, etc. can be mentioned. When the adhesive force of the first adhesive layer 50 is 0.30 N / 20 mm or more, the pedestal and the adhesive sheet 5 can be more firmly fixed at the peripheral portion 54.

[Process to attach to the pedestal]
After the step of preparing the adhesive sheet 5, the prepared adhesive sheet 5 is bonded to the pedestal 1 with the surface opposite to the surface on which only the first adhesive layer 50 is exposed as the bonding surface (see FIG. 29).

[Process to separate from pedestal]
In the step of separating from the pedestal, first, a cut 55 is made in the adhesive sheet 5 from the semiconductor chip 3 side until reaching the second layer 51. At this time, the resin 32 and the wiring layer 2 are simultaneously cut. Thereby, the base 1 and the semiconductor chip 3 with the wiring layer 2 are opposed to each other only through the laminated portion of the first adhesive layer 50 and the second layer 51. Therefore, in the step of separating, it can be easily peeled off at the interface between the first adhesive layer 70 and the second layer 51 or the interface between the second layer 51 and the base 1 by an external force. Thereafter, the first adhesive layer 50 is peeled off from the wiring layer 2. As a result, the base and the semiconductor chip 3 with the wiring layer 2 can be easily separated vertically.

The embodiment according to the second invention has been described above.

<Third present invention>
Hereinafter, regarding the third aspect of the present invention, differences from the first aspect of the present invention will be described. The semiconductor device manufacturing method and the adhesive sheet according to the third aspect of the present invention have, in particular, characteristics and effects other than those described in the section of the third aspect of the present invention. The same characteristics and effects as the adhesive sheet can be exhibited.

A method for manufacturing a semiconductor device according to a third aspect of the present invention is a method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and is more pedestal than the first adhesive layer and the first adhesive layer. A step of preparing an adhesive sheet laminated with a second layer having a low adhesive strength after being attached, a step of attaching the adhesive sheet to a pedestal, and the adhesive sheet after being attached to the pedestal, The method includes at least a step of forming a wiring, a step of mounting a workpiece on the wiring, and a step of separating the workpiece with wiring from the pedestal after the mounting.

Hereinafter, each process according to an embodiment of the third invention will be described with reference to the drawings. Note that the terms “upper surface”, “lower surface”, and the like used in the third aspect of the present invention are only for explaining the positional relationship between layers, and are the actual upper and lower surfaces of the adhesive sheet and the semiconductor device. It does not limit the attitude. In the following embodiment, the case where the work of the third aspect of the present invention is a semiconductor chip will be described. However, the present invention is not limited to this example, and may be a wafer on which a circuit is not formed. It may be a wafer that has been formed, or may be a wafer that has been separated and has no circuit formed thereon.

[Process for preparing adhesive sheet]
First, an adhesive sheet is prepared in which a first adhesive layer and a second layer having a lower adhesive force after being attached to the base than the first adhesive layer are laminated.

Here, the adhesive sheet according to the present embodiment will be described. FIG. 30 is a schematic cross-sectional view showing an adhesive sheet according to an embodiment of the third invention. As shown in FIG. 30, the adhesive sheet 5 has a configuration in which a first adhesive layer 50 is laminated on a second layer 51. The adhesive force of the second layer 51 is lower than the adhesive force of the first adhesive layer 50. The adhesive sheet 5 is bonded to the pedestal using the second layer 51 as a bonding surface in the step of bonding to the pedestal.

In the adhesive sheet 5, since the first adhesive layer 50 exists, the wiring or the like can be fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece. Moreover, since it has not only the 1st adhesive bond layer 50 but the 2nd layer 51 whose adhesive force is lower than the 1st adhesive bond layer 50, in a process to isolate | separate, a base and a workpiece | work with wiring easily Can be separated vertically. Moreover, since the adhesive sheet 5 is bonded to the pedestal using the second layer 51 as a bonding surface, wiring is formed on the first adhesive agent layer 50. Therefore, the wiring or the like can be more firmly fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece.

In the present embodiment, the adhesive force of the second layer 51 after being attached to the pedestal is not particularly limited as long as it is lower than the adhesive force of the first adhesive layer 50 after being attached to the pedestal. The 90 ° peel peel force for a silicon wafer under the conditions of ± 2 ° C. and peel rate of 300 mm / min is preferably 0.3 N / 20 mm or less, and more preferably 0.20 N / 20 mm or less. Moreover, the lower limit value of the adhesive force of the second layer 51 is not particularly limited, and is, for example, 0 N / 20 mm or more, but may be 0.001 / 20 mm or more. When the adhesive force of the second layer 51 is 0.30 N / 20 mm or less, the second layer 51 can be easily peeled from the pedestal. On the other hand, the lower the adhesive force of the second layer 51, the easier the peeling from the pedestal.
Further, the adhesive force of the first adhesive layer 50 after being attached to the pedestal is not particularly limited as long as it is higher than the adhesive force of the second layer 51 after being attached to the pedestal, but the temperature is 23 ± 2 ° C. The 90 ° peel peel force for a silicon wafer under the condition of a peel speed of 300 mm / min is preferably 0.30 N / 20 mm or more, and more preferably 0.40 N / 20 mm or more. Moreover, the upper limit of the adhesive force of the 1st adhesive bond layer 50 is not specifically limited, Although it is so preferable that it is large, For example, 30N / 20mm or less, 20N / 20mm or less, etc. can be mentioned. When the adhesive force of the first adhesive layer 50 is 0.30 N / 20 mm or more, the base and the adhesive sheet 5 can be more firmly fixed.

The adhesive force between the second layer 51 and the first adhesive layer 50 is the adhesive force between the second layer 51 and the base 1 (when the second layer 51 is attached to the base 1, It is preferably higher than the adhesive force between the second layer 51 and the base 1. When the adhesive force between the second layer 51 and the first adhesive layer 50 is lower than the adhesive force between the second layer 51 and the pedestal 1, first, in the step of separating, the second layer The first adhesive layer 50 can be peeled off from the wiring 26 (wiring layer 2) together with the second 51 after that.
The adhesive force between the second layer 51 and the pedestal 1 is preferably 0.3 N / 20 mm or less at a peel peel force of 180 ° under a temperature of 23 ± 2 ° C. and a peel rate of 300 mm / min. More preferably, it is 0.2 N / 20 mm or less. Further, the adhesive force between the second layer 51 and the base 1 is 180 ° peel peeling under the conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min from the viewpoint of not peeling during the wiring forming process. The force is preferably 0.001 N / 20 mm or more, and more preferably 0.01 N / 20 mm or more.
The adhesive force between the second layer 51 and the first adhesive layer 50 is 0.001 N / 20 mm or more at a 180 ° peel peel force at a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min. Is preferably 10 N / 20 mm or less. Further, the adhesive force between the second layer 51 and the first adhesive layer 50 is 1.0 N / 20 mm as a 180 ° peel peel force under the conditions of a temperature of 23 ± 2 ° C. and a peel rate of 300 mm / min. Hereinafter, it may be 0.1 N / 20 mm or less.

The thickness of the first adhesive layer 50 is preferably 0.01 to 99 μm, and more preferably 0.05 to 10 μm.

The thickness of the second layer 51 is preferably 0.09 to 99.9 μm, more preferably 0.05 to 15 μm.

Since the first adhesive layer generally has a lower elastic modulus than the second layer, the surface tends to swell when the layer is formed. From such a viewpoint, it is preferable to make the first adhesive layer thinner and the second layer thicker. On the other hand, since the first adhesive layer generally has a higher glass transition temperature than the second layer, the first adhesive layer has a large shrinkage when the layer is formed. From such a viewpoint, it is preferable to make the first adhesive layer thick and the second layer thin. Therefore, in the third aspect of the present invention, the thickness of the first adhesive layer and the thickness of the second layer take into consideration both the surface waviness during layer formation and the shrinkage during layer formation. Therefore, it is preferable to select within the above numerical range.

The adhesive sheet according to the third aspect of the present invention is not limited to the adhesive sheet 5 as shown in FIG. 30, and may be an adhesive sheet as shown in FIG. FIG. 31 is a schematic sectional view showing an adhesive sheet according to another embodiment of the third invention.
As shown in FIG. 31, the adhesive sheet 6 has a configuration in which a second layer 61 is laminated on a first adhesive layer 60. The adhesive force of the second layer 61 is lower than the adhesive force of the first adhesive layer 60. The adhesive sheet 6 is bonded to the pedestal using the first adhesive layer 60 as a bonding surface in the step of bonding to the pedestal.

In the adhesive sheet 6, since the first adhesive layer 60 is present, the wiring or the like can be fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece. Moreover, since it has not only the 1st adhesive bond layer 60 but the 2nd layer 61 whose adhesive force is lower than the 1st adhesive bond layer 60, in a process to isolate | separate, a base and a workpiece | work with wiring easily Can be separated vertically. Further, since the adhesive sheet 6 is bonded to the pedestal using the first adhesive layer 60 as a bonding surface, the wiring or the like is more firmly fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece. Can be kept.

The adhesive force between the second layer 61 and the first adhesive layer 60 is the adhesive force between the first adhesive layer 60 and the base 1 (when the first adhesive layer 60 is attached to the base 1). Lower than the first adhesive layer 60 and the pedestal 1). If the adhesive force between the second layer 61 and the first adhesive layer 60 is lower than the adhesive force between the first adhesive layer 60 and the pedestal 1, first, in the step of separating, It can peel between the layer 61 and the 1st adhesive bond layer 60, and can peel the 2nd layer 61 from the wiring 26 (wiring layer 2) after that.
The adhesive force between the second layer 61 and the first adhesive layer 60 is 0.3 N / 20 mm or less at a 180 ° peel peel force under conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min. It is more preferable that it is 0.2 N / 20 mm or less. In addition, the adhesive force between the second layer 61 and the first adhesive layer 60 is determined under the conditions of a temperature of 23 ± 2 ° C. and a peeling speed of 300 mm / min from the viewpoint of not peeling during the wiring formation process. The 180 ° peel strength is preferably 0.001 N / 20 mm or more, and more preferably 0.01 N / 20 mm or more.
The adhesive force between the first adhesive layer 60 and the pedestal 1 may be 0.3 N / 20 mm or more at a 180 ° peel peel force at a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min. Preferably, it is more preferably 0.4 N / 20 mm or more. The adhesive force between the first adhesive layer 60 and the pedestal 1 is 30 N / 20 mm or less, 20 N / 20 mm at 180 ° peel peel force at a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min. The following may be used.

The thickness of the first adhesive layer 60 is preferably 0.01 to 99 μm, and more preferably 0.05 to 10 μm.

The thickness of the second layer 61 is preferably 0.09 to 99.9 μm, and more preferably 0.05 to 15 μm.

[Process to attach to the pedestal]
In the following description, the case where the adhesive sheet 5 shown in FIG. 30 is used will be described. 32 to 37 are schematic cross-sectional views for explaining the outline of the semiconductor device manufacturing method according to the embodiment of the third invention. After the step of preparing the adhesive sheet 5, the prepared adhesive sheet 5 is bonded to the base 1 with the lower surface of the adhesive sheet 5 as the bonding surface (see FIG. 32). The bonding method is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll. The conditions for pressure bonding are preferably 20 ° C. to 150 ° C., 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec.

[Process for forming wiring]
Next, on the adhesive sheet 5, the wiring layer 2 having the connecting conductor portion 21 that can be connected to the electrode 31 of the semiconductor chip 3 and the wiring 26 is exposed so that the connecting conductor portion 21 is exposed on the upper surface of the wiring layer 2. (See FIG. 33). The wiring layer 2 has an external connection conductor 22 for electrical connection to the outside on the adhesive sheet 5 side. FIG. 33 shows the case where the connecting conductor portion 21 is convexly exposed on the upper surface of the wiring layer 2, but in the third aspect of the present invention, the connecting conductor portion is exposed on the upper surface of the wiring layer. The upper surface of the connecting conductor portion may be flush with the upper surface of the wiring layer. In the adhesive sheet 5, since only the first adhesive layer 50 is exposed on the upper surface, the wiring layer formed on the adhesive sheet 50 can be more firmly fixed.

[Process for mounting semiconductor chip]
Next, as shown in FIG. 34, the connection conductor portion 21 of the wiring layer 2 and the electrode 31 of the semiconductor chip 3 are connected, and the semiconductor chip 3 is mounted on the wiring layer 2 (wiring 26). In FIG. 34, the protrusions of the connecting conductor portion 21 and the electrode 31 after mounting are omitted. 34 shows a case where a plurality of semiconductor chips 3 are mounted on the wiring layer 2, the number of semiconductor chips mounted on the wiring layer is not particularly limited, and may be one.

Next, as shown in FIG. 35, resin sealing with a resin 32 is performed so as to cover the semiconductor chip 3 as necessary. As the resin 32 used for resin sealing, a conventionally known one or the like can be appropriately used, and a conventionally known method can also be adopted as a resin sealing method.

[Process to separate from pedestal]
Next, as shown in FIG. 36, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1. Specifically, a method of peeling only the pedestal 1 by applying an external force and then peeling the adhesive sheet 5 by 90 ° can be mentioned. Moreover, the method of peeling the 2nd layer 51 with the base 1 by applying external force, and peeling the 1st adhesive bond layer 50 by 90 degrees after that is mentioned. Moreover, after reducing the adhesive force of the 1st adhesive bond layer 50, the method of peeling the adhesive sheet 5 with the base 1 is mentioned. When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. As a method of reducing the adhesive force of the first adhesive layer 50, a method of lowering the adhesive force by dissolving the first adhesive layer 50 with a solvent, a physical method using a cutter, a laser, or the like is applied to the first adhesive layer 50. The first adhesive layer 50 is formed of a material whose adhesive strength is reduced by heating, and the first adhesive layer 50 is ultrasonically cleaned to reduce the adhesive strength. Examples thereof include a method for reducing the adhesive strength of the layer 50. In the ultrasonic cleaning, the cleaning liquid may be heated as necessary, or a cleaning liquid containing a surfactant or the like may be used.

Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 37). In addition, you may give the process of providing a solder ball with respect to the wiring layer 2 which peeled the base 1. FIG.

The outline of the semiconductor device manufacturing method according to this embodiment has been described above. Hereinafter, an example of the manufacturing method of the semiconductor device according to the present embodiment will be described in detail.

[Preparation of pedestal with adhesive sheet]
First, the base 1 is prepared (refer FIG. 32). As the pedestal 1, the one described in the first aspect of the present invention can be used.

Next, the adhesive sheet 5 is bonded on the base 1 (see FIG. 32). As already described, the adhesive sheet 5 has a configuration in which the first adhesive layer 50 is laminated on the second layer 51.

When the silicone resin is used for the first adhesive layer 50, the first adhesive layer 50 may contain other additives as necessary. As such other additives, those described in the first aspect of the present invention can be used.

Next, on the base material on which the second layer 51 is laminated, a solution containing the composition for forming the first adhesive layer 50 has a predetermined thickness on the second layer 51 side. Coating is performed to form a coating film. Thereafter, the coating film is dried under predetermined conditions to form the first adhesive layer 50. From the above, an adhesive sheet 5 as shown in FIG. 30 is obtained. In addition, the adhesive sheet 6 as shown in FIG. 31 can also be created by the same method.

[Formation of wiring layer]
Next, the wiring layer 2 is formed on the adhesive sheet 5 of the base 1 (see FIG. 33). As a method for forming the wiring layer on the pedestal having the adhesive sheet, the method described in the first aspect of the present invention can be employed.

[Mounting process, peeling process, dicing]
Next, a chip is mounted on the wiring layer 2 obtained above (with the base 1 being detachable) (see FIG. 34). Thereafter, aging of the wiring layer 2 is performed, and further, resin sealing is performed on each chip 3 on the wiring layer 2 as necessary (see FIG. 35). For resin sealing, a sheet-like sealing resin sheet may be used, or a liquid resin sealing material may be used. Thereafter, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1 (see FIG. 36). When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 37). In mounting a chip on the wiring layer 2 (flip chip connection), an underfill resin may be used between the wiring layer 2 and the chip. The underfill resin may be a sheet or a liquid. In the above-described embodiment, the case where the resin sealing is performed after the chip is mounted has been described. Instead of the resin sealing, a conventionally known flip chip type semiconductor back film is formed on the chip. It may be used. The flip chip type semiconductor back film is a film for forming on the back surface of a chip (semiconductor element) flip-chip connected on an adherend. Details are disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-249739. Since it is disclosed, a description thereof is omitted here.

In the above-described embodiment, the case where the first adhesive layer, the second layer, and the base are the same size has been described. However, in the third aspect of the present invention, the lamination mode of the first adhesive layer and the second layer is not limited to this example. In the adhesive sheet of the third aspect of the present invention, for example, the layer on the side contacting the pedestal may be larger than the layer on the side not contacting the pedestal.

FIG. 38 is a schematic cross-sectional view showing a state in which a wiring layer is formed and a semiconductor chip is mounted on an adhesive sheet according to another embodiment. As shown in FIG. 38, the adhesive sheet 105 has a configuration in which a first adhesive layer 150 and a second layer 151 having a size larger than that of the first adhesive layer 150 in plan view are stacked. The adhesive sheet 105 is fixed to the pedestal 1 such that the second layer 151 is in contact with the pedestal 1. A wiring layer 2 is formed on the side of the adhesive sheet 105 opposite to the base 1. A semiconductor chip 3 is mounted on the wiring layer 2. The wiring layer 2 is formed on the first adhesive layer 150 and on the portion where the second layer 151 is exposed. Even in such a shape, in the step of separating, for example, it can be peeled off at the interface between the first adhesive layer 150 and the second layer 151 or at the interface between the second layer 151 and the base 1. .

In the third aspect of the present invention, for example, both the first adhesive layer and the second layer may be smaller in size than the pedestal. FIG. 39 is a schematic cross-sectional view illustrating a state in which a wiring layer is formed and a semiconductor chip is mounted on an adhesive sheet according to another embodiment. As shown in FIG. 39, the adhesive sheet 205 has a configuration in which both the first adhesive layer 250 and the second layer 251 have the same size, and are smaller in size than the base 1 in plan view. ing. The adhesive sheet 205 is fixed to the pedestal 1 such that the second layer 251 is in contact with the pedestal 1. A wiring layer 2 is formed on the side of the adhesive sheet 205 opposite to the base 1. A semiconductor chip 3 is mounted on the wiring layer 2. The wiring layer 2 is formed on the first adhesive layer 150 and a portion where the base 1 is exposed. Even in such a shape, in the step of separating, for example, it can be peeled off at the interface between the first adhesive layer 250 and the second layer 251 or at the interface between the second layer 251 and the base 1. . In the example of FIG. 39, the case where the first adhesive layer 250 and the second layer 251 have the same size has been described. However, the first adhesive layer 250 is smaller in size than the second layer 251. May be. In this case, the wiring layer 2 may be formed on the first adhesive layer 250, on the exposed portion of the second layer 251, and on the exposed portion of the base 1.
In the example shown in FIG. 39, the case where the wiring layer is formed also in the exposed part of the base 1 has been described. However, in the third aspect of the present invention, even when the pedestal is exposed after the adhesive sheet is attached (when both the first adhesive layer and the second layer are smaller in size than the pedestal). However, the wiring layer may be formed only on the adhesive sheet without forming the wiring layer in the portion where the pedestal is exposed.

The embodiment according to the third aspect of the present invention has been described above.

<Fourth Invention>
Hereinafter, regarding the fourth aspect of the present invention, differences from the first aspect of the present invention will be described. The method for manufacturing a semiconductor device according to the fourth aspect of the present invention has the same characteristics and effects as those of the method for manufacturing a semiconductor device according to the first aspect of the present invention, in particular, as characteristics and effects other than those described in the section of the fourth aspect of the present invention. It can be demonstrated.

A method for manufacturing a semiconductor device according to a fourth aspect of the present invention is a method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, wherein a temporary fixing sheet is disposed on a pedestal, and the temporary fixing Forming an adhesive layer having a higher adhesive force than the temporary fixing sheet between the sheet and the inclined portion of the pedestal end, and fixing the temporary fixing sheet to the pedestal; and the fixed to the pedestal On the temporary fixing sheet, a step of forming wiring, a step of mounting a work on the wiring, and after the mounting, separating the adhesive layer from the temporary fixing sheet, a work with wiring And at least a step of separating from the pedestal.

Hereinafter, each process according to an embodiment of the fourth invention will be described with reference to the drawings. Note that the terms “upper surface”, “lower surface” and the like used in the fourth aspect of the present invention are only for explaining the positional relationship between layers, and are used for temporary fixing sheets and semiconductor devices. It does not limit the up and down posture. In the following embodiment, a case where the work of the fourth aspect of the present invention is a semiconductor chip will be described. However, the present invention is not limited to this example and may be a wafer on which a circuit is not formed. It may be a wafer that has been formed, or may be a wafer that has been separated and has no circuit formed thereon.

[Step of fixing temporary fixing sheet to pedestal]
40 to 46 are schematic cross-sectional views for explaining the outline of the semiconductor device manufacturing method according to the fourth embodiment of the present invention. FIG. 40A is a diagram showing a state where the temporary fixing sheet is fixed to the pedestal, and FIG. 40B is a partially enlarged view thereof. First, as shown in FIGS. 40 (a) and 40 (b), the temporary fixing sheet 5 is disposed on the pedestal 1, and between the temporary fixing sheet 5 and the inclined portion 11 of the pedestal end. Then, the adhesive layer 50 having higher adhesive strength than the temporary fixing sheet 5 is formed, and the temporary fixing sheet 5 is fixed to the base 1. Specifically, for example, first, the temporary fixing sheet 5 is disposed on the pedestal 1, and then a liquid adhesive composition is applied between the temporary fixing sheet 5 and the inclined portion 11 of the pedestal end. Then, by drying, etc., a method of forming the adhesive layer 50 and fixing the temporary fixing sheet 5 to the base 1 can be mentioned. In addition, when the adhesive layer 50 as a sheet-like material is provided in advance on the outer peripheral portion of the temporary fixing sheet 5 (the portion corresponding to the inclined portion 11), and the temporary fixing sheet 5 is disposed on the base 1, A method of fixing the temporary fixing sheet 5 to the pedestal 1 by affixing the adhesive layer 50 to the inclined portion 11 of the pedestal 1 can be mentioned. Further, a liquid adhesive layer forming solution is applied (for example, spray coating) to the outer peripheral portion of the temporary fixing sheet 5 (the portion corresponding to the inclined portion 11), and the temporary fixing sheet 5 is placed on the base 1. A method of fixing the temporarily fixing sheet 5 to the pedestal 1 by arranging the applied portion corresponding to the inclined portion 11 of the pedestal 1 and then curing it to form the adhesive layer 50 when arranging. Can be mentioned.
In the present embodiment, as shown in FIG. 40B, the end portion of the temporary fixing sheet 5 is inside the end portion of the pedestal 1 and outside the tilt start position of the inclined portion of the pedestal 1. It is preferable. Specifically, when the distance in the lateral direction (horizontal direction of the surface of the temporary fixing sheet) between the end of the base 1 and the end of the temporary fixing sheet 5 is D1 (see FIG. 40B), D1 Is preferably one tenth of the radius D2 of the pedestal 1 (see FIG. 40B), that is, larger than (D2) / 10.
Further, D1 is preferably smaller than two-thirds of D2, that is, (D2) × (2/3). When D1 is larger than 1/10 of D2, it is possible to prevent the temporary fixing sheet 5 from touching another member (for example, a cassette used for conveyance) and turning up. Moreover, when D1 is smaller than two thirds of D2, the area of the adhesion part by the adhesive bond layer 50 can be ensured to some extent, and it is excellent in adhesion reliability. The D2 is usually 0.1 to 0.4 mm. By making D1 larger than (D2) / 10, it is possible to prevent the adhesive layer from being rubbed and causing foreign matter when the cassette is stored.

[Process for forming wiring]
Next, the wiring layer 2 having the connecting conductor portion 21 and the wiring 26 that can be connected to the electrode 31 of the semiconductor chip 3 is exposed on the upper surface of the wiring layer 2 on the temporary fixing sheet 5. (See FIG. 41). The wiring layer 2 has an external connection conductor 22 for electrical connection to the outside on the temporary fixing sheet 5 side. FIG. 41 shows the case where the connecting conductor portion 21 is convexly exposed on the upper surface of the wiring layer 2, but in the fourth aspect of the present invention, the connecting conductor portion is exposed on the upper surface of the wiring layer. The upper surface of the connecting conductor portion may be flush with the upper surface of the wiring layer.

[Process for mounting semiconductor chip]
Next, as shown in FIG. 42, the connecting conductor portion 21 of the wiring layer 2 and the electrode 31 of the semiconductor chip 3 are connected, and the semiconductor chip 3 is mounted on the wiring layer 2 (wiring 26). In FIG. 42, the protrusions of the connecting conductor portion 21 and the electrode 31 after mounting are omitted. 42 shows the case where a plurality of semiconductor chips 3 are mounted on the wiring layer 2, the number of semiconductor chips mounted on the wiring layer is not particularly limited, and may be one.

Next, as shown in FIG. 43, resin sealing with a resin 32 is performed to cover the semiconductor chip 3 as necessary. As the resin 32 used for resin sealing, a conventionally known one or the like can be appropriately used, and a conventionally known method can also be adopted as a resin sealing method.

[Process to separate from pedestal]
Next, by separating the adhesive layer 50 from the temporary fixing sheet 5, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1 (see FIG. 44). Since the temporary fixing sheet 5 is fixed to the pedestal 1 mainly by the adhesive layer 50 formed on the inclined portion 11 at the pedestal end, the adhesive layer 50 is separated from the temporary fixing sheet 5. For example, the base 1 and the semiconductor chip 3 with the wiring layer 2 can be easily separated from each other by an external force. As a method of separating the adhesive layer 50 from the temporary fixing sheet 5, a method of separating the adhesive layer 50 from the temporary fixing sheet 5 by dissolving the adhesive layer 50 with a solvent, A method in which the adhesive layer 50 is separated from the temporary fixing sheet 5 by physically cutting with a laser or the like, and the adhesive layer 50 is formed of a material whose adhesive strength is reduced by heating. A method of lowering and separating the adhesive layer 50 from the temporary fixing sheet 5 can be exemplified. In the present embodiment, since the adhesive layer 50 is formed on the inclined portion 11 of the pedestal end, the adhesive layer 50 is dissolved by a solvent, or the temporary fixing sheet 5 is physically used by a cutter, a laser, or the like. It is easy to reduce the adhesive force of the adhesive layer 50 by making a cut. Especially, it is preferable to separate the semiconductor chip 3 with the wiring layer 2 from the pedestal 1 by making a cut so that the adhesive layer 50 is separated from the temporary fixing sheet 5. This is because the semiconductor chip 3 with the wiring layer 2 can be easily separated from the pedestal 1 because the temporary fixing sheet 5 may be cut. When cutting the adhesive layer 50, the wiring layer 2 may be cut to such an extent that the wiring 26 (see FIG. 41) does not cut, but as shown in FIG. 45, the wiring layer 2 is cut. It is preferable to make a cut in the temporary fixing sheet 5 so as not to enter. When a cut is made in the temporary fixing sheet 5 so as not to make a cut in the wiring layer 2, a device (semiconductor chip 3 with the wiring layer 2) can be obtained with an area substantially the same as the area of the base 1 in a plan view. This is because it becomes possible. As a method of making a cut in the temporary fixing sheet 5 so as not to cut into the wiring layer 2, as shown in FIG. 45, a cutting tool 14 such as a cutter or a laser is used to cut only the temporary fixing sheet 5 from an obliquely upward direction. The method of forming is mentioned. Further, a method of forming a cutting tool such as a cutter or a laser incision at the interface between the adhesive layer 50 and the temporary fixing sheet 5 from the lateral direction can be mentioned.

Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 46). In addition, you may give the process of providing a solder ball with respect to the wiring layer 2 which peeled the base 1. FIG.

[Step of fixing the temporary fixing sheet to the base]
First, the pedestal 1 is prepared (see FIG. 40A). As the pedestal 1, the one described in the first aspect of the present invention can be used.

Next, the temporary fixing sheet 5 is disposed on the pedestal 1, and an adhesive layer 50 having a higher adhesive force than the temporary fixing sheet 5 is formed between the temporary fixing sheet 5 and the inclined portion 11 of the pedestal end. And the sheet | seat 5 for temporary fixing is fixed to the base 1 (refer Fig.40 (a) and FIG.40 (b)).

The adhesive composition constituting the adhesive layer 50 is not particularly limited as long as it is selected so that the adhesive force of the adhesive layer 50 is higher than that of the temporary fixing sheet 5. Examples of the adhesive composition constituting the adhesive layer 50 include a polyimide resin having an imide group and a structural unit derived from a diamine having an ether structure at least partially, and a precursor of the polyimide resin. And polyamic acid, a silicone resin, and a combination of a thermoplastic resin and a thermosetting resin.

When using the said silicone resin for the adhesive bond layer 50, the adhesive bond layer 50 can contain another additive as needed. As such other additives, those described in the first aspect of the present invention can be used.

The composition constituting the temporary fixing sheet 5 is not particularly limited as long as the adhesive force of the temporary fixing sheet 5 is selected to be lower than the adhesive force of the adhesive layer 50. Examples of the material constituting the temporary fixing sheet 5 include inorganic materials such as Cu, Cr, Ni, and Ti.

Moreover, as a composition which comprises the sheet | seat 5 for temporary fixing, you may use the said polyimide resin demonstrated as the adhesive composition which comprises the said adhesive bond layer 50, The polyamic acid which is the precursor of the said polyimide resin is used. It may be used, the silicone resin may be used, or a combination of the thermoplastic resin and the thermosetting resin may be used.

(Manufacture of temporary fixing sheets)
The temporary fixing sheet 5 is produced, for example, as follows. First, a solution containing a composition for forming the temporary fixing sheet 5 is prepared. Next, the solution is applied on a substrate to a predetermined thickness to form a coating film, and then the coating film is dried under a predetermined condition. Examples of the substrate include metal foil such as SUS304, 6-4 alloy, aluminum foil, copper foil, Ni foil, polyethylene terephthalate (PET), polyethylene, polypropylene, fluorine-based release agent, and long-chain alkyl acrylate-type release agent. A plastic film, paper, or the like whose surface is coated with a release agent such as, can be used. Moreover, it does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, spin coat coating etc. are mentioned. Thereby, the temporary fixing sheet 5 according to the present embodiment is obtained.

[Formation of wiring layer]
Next, the wiring layer 2 is formed on the temporary fixing sheet 5 of the base 1 (see FIG. 41). As a method of forming the wiring layer on the pedestal having the temporary fixing sheet, the method described in the first aspect of the present invention can be employed.

[Mounting process, peeling process, dicing]
Next, a chip is mounted on the wiring layer 2 obtained above (with the base 1 being peelable) (see FIG. 42). Thereafter, aging of the wiring layer 2 is performed, and further, resin sealing is performed on each chip 3 on the wiring layer 2 as necessary (see FIG. 43). For resin sealing, a sheet-like sealing resin sheet may be used, or a liquid resin sealing material may be used. Thereafter, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1 (see FIG. 44). When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 46). In mounting a chip on the wiring layer 2 (flip chip connection), an underfill resin may be used between the wiring layer 2 and the chip. The underfill resin may be a sheet or a liquid. In the above-described embodiment, the case where the resin sealing is performed after the chip is mounted has been described. Instead of the resin sealing, a conventionally known flip chip type semiconductor back film is formed on the chip. It may be used. The flip chip type semiconductor back film is a film for forming on the back surface of a chip (semiconductor element) flip-chip connected on an adherend. Details are disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-249739. Since it is disclosed, a description thereof is omitted here.

In the above-described embodiment, the case where the adhesive layer is formed only on the inclined portion of the pedestal has been described. However, the fourth aspect of the present invention is not limited to this example, and an adhesive layer may be formed from the inclined portion to the inner side (the center side of the base).

FIG. 47 is a schematic cross-sectional view for explaining an outline of a method for manufacturing a semiconductor device according to another embodiment. In another embodiment described with reference to FIG. 47, the steps other than the step of fixing the temporary fixing sheet to the pedestal and the step of separating from the pedestal are substantially the same as those of the above-described embodiment. In the following, the process of fixing the temporary fixing sheet to the pedestal and the process of separating from the pedestal will be described.

[Step of fixing temporary fixing sheet to pedestal]
As shown in FIG. 47, the temporary fixing sheet 105 has a recess 105a in the outer peripheral portion (the inclined portion of the pedestal and the portion inside the inclined portion). In the present embodiment, first, as shown in FIG. 47, the temporary fixing sheet 105 is disposed on the pedestal 1, and the inclined portion 11 and the concave portion 105a at the end of the pedestal are more adhesive than the temporary fixing sheet 105. A high adhesive layer 150 is formed, and the temporary fixing sheet 105 is fixed to the base 1. Specifically, for example, first, the temporary fixing sheet 105 having the concave portion 105a is disposed on the base 1, and then a liquid adhesive composition is applied to the inclined portion 11 and the concave portion 105a, followed by drying or the like. Thus, there is a method of forming the adhesive layer 150 and fixing the temporary fixing sheet 105 to the base 1. In addition, an adhesive layer 150 as a sheet-like material is provided in advance on a portion corresponding to the inclined portion 11 of the temporary fixing sheet 105 having the concave portion 105a and on the concave portion 105a, and the temporary fixing sheet 105 is attached to the base 1. A method of fixing the temporary fixing sheet 105 to the pedestal 1 by attaching the adhesive layer 150 so as to include the inclined portion 11 of the pedestal 1 when placed on the pedestal 1 can be mentioned. In addition, a liquid adhesive layer forming solution is applied to the portion corresponding to the inclined portion 11 of the temporary fixing sheet 105 and the concave portion 105a (for example, spray application), and the temporary fixing sheet 105 is mounted on the base. 1 is disposed so that the inclined portion 11 of the pedestal 1 is included and then cured to form an adhesive layer 150, whereby the temporary fixing sheet 105 is placed on the pedestal 1. The method of fixing is mentioned. In the present embodiment, as shown in FIG. 47, the end of the temporary fixing sheet 105 coincides with the end of the base 1. However, in the fourth aspect of the present invention, the end portion of the temporary fixing sheet is not limited to this example, and within a range in which the temporary fixing sheet can be fixed to the pedestal by the adhesive layer, the end portion of the temporary fixing sheet is more predetermined than the end portion of the pedestal. It may be inside the distance (for example, 10 mm).

[Process to separate from pedestal]
In the step of separating from the base, the semiconductor layer 3 with the resin-sealed wiring layer 2 is separated from the base 1 by separating the adhesive layer 150 from the temporary fixing sheet 105. The temporary fixing sheet 105 is fixed to the pedestal 1 mainly by the inclined portion 11 at the pedestal end and the adhesive layer 150 formed further from the inclined portion 11 to the inner side. If it is separated from the fixing sheet 105, the base 1 and the semiconductor chip 3 with the wiring layer 2 can be easily separated vertically by external force. As a method of separating the adhesive layer 150 from the temporary fixing sheet 105, a method of separating the adhesive layer 150 from the temporary fixing sheet 105 by dissolving the adhesive layer 150 with a solvent, A method in which the adhesive layer 150 is separated from the temporary fixing sheet 105 by physically cutting with a laser or the like, and the adhesive layer 150 is formed of a material whose adhesive strength is reduced by heating. And a method of reducing the adhesive layer 150 from the temporary fixing sheet 105. In the present embodiment, since the adhesive layer 150 is formed further from the inclined portion 11 of the pedestal end portion to the inner side, the notch 165 is formed from the semiconductor chip 3 side until reaching the adhesive sheet 105 as shown in FIG. It is preferable to add. At this time, the resin 32 and the wiring layer 2 are simultaneously cut. Similarly to the above-described embodiment, only the temporary fixing sheet 105 may be cut from an obliquely upward direction so that the wiring layer 2 is not cut. As a result, the base 1 and the semiconductor chip 3 with the wiring layer 2 face each other only through the temporary fixing sheet 105. Thereafter, by applying an external force, the base 1 and the semiconductor chip 3 with the wiring layer 2 are separated vertically. At this time, since the pedestal 1 and the semiconductor chip 3 with the wiring layer 2 are opposed to each other only through the temporary fixing sheet 105 having a relatively low adhesive force, the pedestal 1 and the wiring layer 2 are easily attached by an external force. The semiconductor chip 3 can be separated vertically. As a method for forming the cut, a conventionally known method or the like can be adopted, and a cutting tool such as a cutter or a high energy beam by a laser or the like can be used.

In the embodiment described above, the temporary fixing sheet 105 having the recess 105a is used in the outer peripheral portion (the inclined portion of the base and the inner portion of the inclined portion), as shown in FIG. The case where the adhesive layer 150 is separated from the temporary fixing sheet 105 by making a cut 165 until reaching the adhesive sheet 105 has been described. However, the fourth aspect of the present invention is not limited to this example, and uses a temporary fixing sheet (for example, the temporary fixing sheet 5 shown in FIG. Then, the adhesive layer may be separated from the temporary fixing sheet by making a cut until reaching the adhesive sheet.

The embodiment according to the fourth aspect of the present invention has been described above.

<Fifth Invention>
Hereinafter, regarding the fifth aspect of the present invention, differences from the first aspect of the present invention will be described. The semiconductor device manufacturing method and the adhesive sheet according to the fifth aspect of the present invention have, in particular, characteristics and effects other than those described in the section of the fifth aspect of the present invention. The same characteristics and effects as the adhesive sheet can be exhibited.

A method for manufacturing a semiconductor device according to a fifth aspect of the present invention is a method for manufacturing a semiconductor device having a structure in which a work is mounted on a wiring, and includes a first adhesive layer, a structure having a large number of through holes, and And / or a second layer having a non-woven fabric structure as a skeleton, and the adhesive strength of the second layer after being attached to a pedestal is lower than the adhesive strength of the first adhesive layer A step of bonding the adhesive sheet to the pedestal, a step of forming a wiring on the adhesive sheet after being bonded to the pedestal, a step of mounting a work on the wiring, and the mounting And a step of separating the work with wiring from the pedestal.

Hereinafter, each process according to an embodiment of the fifth invention will be described with reference to the drawings. Note that the terms “upper surface”, “lower surface”, and the like used in the fifth aspect of the present invention are only for explaining the positional relationship of the layers, and are the actual upper and lower surfaces of the adhesive sheet and the semiconductor device. It does not limit the attitude. In the following embodiment, the case where the work of the fifth aspect of the present invention is a semiconductor chip will be described. However, the present invention is not limited to this example, and may be a wafer on which a circuit is not formed. It may be a wafer that has been formed, or may be a wafer that has been separated and has no circuit formed thereon.

[Process for preparing adhesive sheet]
First, the second adhesive layer has a first adhesive layer and a second layer having a structure having a large number of through holes and / or a non-woven structure as a skeleton, and is attached to a pedestal. An adhesive sheet having an adhesive strength lower than that of the first adhesive layer is prepared.

Here, the adhesive sheet according to the present embodiment will be described.
[First Embodiment]
FIG. 48 is a schematic cross-sectional view showing the adhesive sheet according to the first embodiment of the fifth invention. As shown in FIG. 48, the adhesive sheet 5 has a peripheral portion 54 formed by the first adhesive layer 50, and a central portion 53 inside the peripheral portion 54 has a large number of penetrations with the first adhesive layer 50. It is formed by lamination with the second layer 51 having a structure having holes and / or a non-woven structure as a skeleton. That is, the adhesive sheet 5 includes a second layer 51 and a first adhesive layer 50 that is laminated on the second layer 51 in such a manner as to cover the upper surface and side surfaces of the second layer 51. The adhesive force of the second layer 51 is lower than the adhesive force of the first adhesive layer 50. The adhesive sheet 5 is bonded to the pedestal using the surface on the side where the second layer 51 is exposed in the step of bonding to the pedestal.

The thickness of the adhesive sheet 5 is not particularly limited, and is, for example, 10 μm or more, preferably 50 μm or more. When the thickness is 10 μm or more, it is possible to follow the unevenness of the pedestal surface and the wiring surface, and the adhesive sheet can be filled without any gap. Moreover, the thickness of the adhesive sheet 5 is 500 micrometers or less, for example, Preferably it is 300 micrometers or less. When the thickness is 500 μm or less, variation in thickness and shrinkage / expansion during heating can be suppressed or prevented.

Although the thickness of the 1st adhesive bond layer 50 in the center part 53 can be set suitably, Preferably it is 0.1 micrometer or more, More preferably, it is 0.5 micrometer or more, More preferably, it is 1 micrometer or more. Moreover, this thickness becomes like this. Preferably it is 300 micrometers or less, More preferably, it is 200 micrometers or less. Further, the thickness of the second layer 51 in the central portion 53 can be set as appropriate.

49 is a plan view of the adhesive sheet shown in FIG. As shown in FIG. 49, the adhesive sheet 5 has a circular shape when viewed in plan. The diameter of the adhesive sheet 5 is not particularly limited. For example, the diameter of the adhesive sheet 5 is preferably +1.0 to −1.0 mm with respect to the diameter of the pedestal.

Further, when the adhesive sheet 5 is viewed in plan, the shape of the second layer 51 is circular. The area of the second layer 51 when the adhesive sheet 5 is viewed in plan is preferably 10% or more, more preferably 20% or more with respect to the area of the adhesive sheet 5 when the adhesive sheet 5 is viewed in plan. Preferably it is 50% or more. If it is 10% or more, it is easy to cut the first adhesive layer 50 formed in the peripheral portion 54 or to reduce the adhesive force, and to easily separate the pedestal from the semiconductor chip with wiring. The area of the second layer 51 is preferably 99.95% or less, more preferably 99.9% or less. When it is 99.95% or less, a semiconductor chip with wiring can be firmly fixed to a pedestal.

The adhesive strength of the first adhesive layer 50 is preferably, for example, a 90 ° peel peel force on a silicon wafer under conditions of a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min is 0.30 N / 20 mm or more. 0.40 N / 20 mm or more is more preferable. When it is 0.30 N / 20 mm or more, the base and the adhesive sheet 5 can be more firmly fixed. The upper limit of the 90 ° peel peel force is not particularly limited and is preferably as large as possible. For example, it is 30 N / 20 mm or less, preferably 20 N / 20 mm or less.

Although it does not specifically limit as an adhesive composition which comprises the 1st adhesive bond layer 50, The polyimide resin which has an imide group and has a structural unit derived from the diamine which has an ether structure in at least one part is used suitably it can. Moreover, a silicone resin can also be used suitably. Especially, the said polyimide resin is preferable from the point of heat resistance, chemical resistance, and adhesive residue.

The adhesive composition constituting the first adhesive layer 50 may contain other additives. As such other additives, those described in the first aspect of the present invention can be used.

The second layer 51 has a structure 57 having a large number of through holes 56 and / or a non-woven structure as a skeleton. FIG. 50 is a plan view showing an example of a structure having a large number of through holes. As shown in FIG. 50, the through-hole 56 penetrates in the thickness direction of the structure 57 (also referred to as the thickness direction of the adhesive sheet 5).

The adhesive force of the second layer 51 can be adjusted by adjusting the aperture ratio of the structure 57 having a large number of through holes 56. Specifically, when the through hole 56 is filled with an adhesive composition described later, the adhesive force can be increased by increasing the aperture ratio, and the adhesive force can be decreased by decreasing the aperture ratio.
The porosity of the structure 57 is preferably 5% or more, more preferably 8% or more, and further preferably 10% or more. When it is 5% or more, the adhesive composition filled in the through holes 56 can reach the adherend, and the adhesive force of the second layer 51 can be adjusted.
The open area ratio is preferably 98% or less, more preferably 95% or less, and still more preferably 90% or less. When it is 98% or less, the adhesive force of the second layer 51 can be made lower than that of the first adhesive layer 50 even when the same adhesive composition as that of the first adhesive layer 50 is filled in the through holes 56.

In the structure 57, the shape of the through hole 56 (the shape of the through hole 56 when the adhesive sheet 5 is viewed in plan) is not particularly limited, and examples thereof include a circle, an ellipse, and a polygon. The shapes of the through holes 56 may all be the same or different.

When the adhesive sheet 5 is viewed in plan, the size (area) of one through hole 56 is preferably 70 μm ² or more, more preferably 100 μm ² or more. Further, it is preferably 20 mm ² or less, more preferably 7 mm ² or less. The sizes of the through holes 56 may all be the same or different.

The material of the structure 57 having a large number of through-holes 56 and the nonwoven structure is not particularly limited. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide resin, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyls Fuido, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, paper and the like. In addition, metal materials such as iron, copper, nickel, tungsten, aluminum, gold, silver, copper, brass, red copper, phosphor bronze, nichrome, monel metal, bronze, and stainless steel (SUS) can be used. These may be used alone or in combination of two or more. Especially, when it is the structure 57 which has many through-holes 56, from a heat resistant point, a metal material, the above-mentioned polyimide resin, and the above-mentioned silicone resin are preferable, and SUS and aluminum are more preferable. In the case of a non-woven structure, the above-described polyimide resin, the above-described silicone resin, and metal material are preferable from the viewpoint of heat resistance and contamination.

The lower the adhesive strength of the structure 57 having a large number of through-holes 56 and the non-woven structure, the better. For example, the 90 ° peel peel force on a silicon wafer under conditions of a temperature of 23 ± 2 ° C. and a peel rate of 300 mm / min is preferably less than 0.30 N / 20 mm, and more preferably 0.20 N / 20 mm or less. Preferably, it is 0.10 N / 20 mm or less. If the thickness is less than 0.30 N / 20 mm, the second layer 51 can be easily peeled off. The lower limit of the 90 ° peel peeling force is, for example, 0 N / 20 mm or more and 0.001 N / 20 mm or more.
When the structure 57 having a large number of through holes 56 and the non-woven structure are bonded by imidization or thermosetting, the 90 ° peel peeling force is fixed to the silicon wafer. The 90 ° peel peel force in a state (for example, after imidization or after thermosetting). Specifically, it can be measured by the method described in the examples.

The pores of the through-hole 56 and the non-woven structure may be filled with the adhesive composition or may not be filled. It is preferable that the second layer having a low adhesive force can be easily formed by controlling the aperture ratio of the structure 57 and the density of the non-woven structure.

There are no particular limitations on the adhesive composition that fills the through-holes 56 and the porosity of the nonwoven fabric, and examples thereof include the aforementioned polyimide resins and the aforementioned silicone resins.

The adhesive force of the second layer 51 is lower than the adhesive force of the first adhesive layer 50. The adhesive force of the second layer 51 is preferably, for example, a 90 ° peel peel force for a silicon wafer under a temperature of 23 ± 2 ° C. and a peel rate of 300 mm / min is less than 0.30 N / 20 mm. More preferably, it is 20 N / 20 mm or less. If the thickness is less than 0.30 N / 20 mm, the second layer 51 can be easily peeled off. The lower limit of the 90 ° peel peel force is preferably as low as possible, but is preferably 0 N / 20 mm or more, more preferably 0.001 N / 20 mm or more, still more preferably 0.01 N / 20 mm or more, and particularly preferably 0.10 N. / 20 mm or more.
The adhesive strength of the second layer 51 depends on the opening ratio of the structure 57, the density of the nonwoven structure, the type of the adhesive composition that fills the pores of the through holes 56 and the nonwoven fabric, the material of the structure 57, and the like. Can be adjusted.

The manufacturing method of the adhesive sheet 5 is not particularly limited. For example, a solution containing a composition for forming the first adhesive layer 50 is applied to the structure 57 having a large number of through-holes 56 and the periphery thereof (region around the structure 57), and the through-holes 56 are applied. And the coating layer is formed on the structure 57 and around the structure 57. In this method, the coating layer formed around the structure 57 becomes the first adhesive layer 50 in the peripheral portion 54.

In addition, when the second layer 51 has a non-woven structure as a skeleton, a solution containing the composition for forming the first adhesive layer 50 is applied to the non-woven structure and the periphery thereof, It can be manufactured by filling the pores of the non-woven structure with the solution and forming a coating layer on and around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 50 in the peripheral portion 54.

The viscosity of the solution to be applied can be set as appropriate. What is necessary is just to set the application quantity suitably.

[Second Embodiment]
The adhesive sheet of the fifth aspect of the present invention is not limited to the shape of the adhesive sheet 5. FIG. 51 is a schematic cross-sectional view showing an adhesive sheet according to the second embodiment of the fifth invention. FIG. 52 is a plan view of the adhesive sheet shown in FIG. As shown in FIGS. 51 and 52, the adhesive sheet 6 has a peripheral portion 64 formed of the first adhesive layer 60, and a central portion 63 inside the peripheral portion 64 has a large number of through holes 66. A second layer 61 having a structure as a skeleton is formed. The adhesive force of the second layer 61 is lower than the adhesive force of the first adhesive layer 60.

Note that the second layer 61 may have a non-woven structure as a skeleton.

The thickness of the adhesive sheet 6 is not particularly limited, and examples thereof include those exemplified for the adhesive sheet 5 of the first embodiment.

As shown in FIG. 52, the adhesive sheet 6 has a circular shape when viewed in plan. The diameter of the adhesive sheet 6 is not specifically limited, For example, what was illustrated by the adhesive sheet 5 of 1st Embodiment is mentioned. Moreover, the area of the 2nd layer 61 when the adhesive sheet 6 is planarly viewed is not specifically limited, For example, what was illustrated with the adhesive sheet 5 of 1st Embodiment is mentioned.

Examples of the adhesive strength of the first adhesive layer 60 include those exemplified for the first adhesive layer 50. The description of the first adhesive layer 60 is the same as the content of the first adhesive layer 50.

Examples of the adhesive strength of the second layer 61 include those exemplified for the second layer 51. The description of the second layer 61 is the same as the content of the second layer 51.

The manufacturing method of the adhesive sheet 6 is not particularly limited. For example, a solution including a composition for forming the first adhesive layer 60 is applied to a structure having a large number of through-holes 66 and the periphery thereof (region around the structure), and the through-holes 66 are formed as described above. It can be manufactured by filling with a solution and forming a coating layer around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 60 in the peripheral portion 64.

When the second layer 61 has a non-woven structure as a skeleton, a solution containing the composition for forming the first adhesive layer 60 is applied to the non-woven structure and the periphery thereof. It can be produced by filling the pores of the non-woven structure with the solution and forming a coating layer around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 60 in the peripheral portion 64.

[Third Embodiment]
The adhesive sheet of the fifth aspect of the present invention is not limited to the shape of the

adhesive sheets

5 and 6. FIG. 53 is a schematic cross-sectional view showing an adhesive sheet according to a third embodiment of the fifth invention. As shown in FIG. 53, the adhesive sheet 7 is formed by stacking a first adhesive layer 70 and a second layer 71 having a structure having a large number of through holes and / or a non-woven fabric structure as a skeleton. Has been. The adhesive force of the second layer 71 is lower than the adhesive force of the first adhesive layer 70.

In the adhesive sheet 7, since the first adhesive layer 70 exists, the wiring or the like can be fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece. Moreover, since it has not only the 1st adhesive bond layer 70 but the 2nd layer 71 whose adhesive force is lower than the 1st adhesive bond layer 70, in the process of isolate | separating, a base and a workpiece | work with wiring easily Can be separated vertically. Moreover, since the adhesive sheet 7 is bonded to the pedestal using the second layer 71 as a bonding surface, wiring is formed on the first adhesive agent layer 70. Therefore, the wiring or the like can be more firmly fixed to the pedestal in the process of forming the wiring or the process of mounting the workpiece.

The thickness of the first adhesive layer 70 is not particularly limited, and is, for example, 10 μm or more, preferably 50 μm or more. When the thickness is 10 μm or more, the unevenness of the pedestal surface and the wiring surface can be followed, and the adhesive sheet 7 can be filled without any gaps. Moreover, the thickness of the 1st adhesive bond layer 70 is 500 micrometers or less, for example, Preferably it is 300 micrometers or less. When the thickness is 500 μm or less, variation in thickness and shrinkage / expansion during heating can be suppressed or prevented.

The thickness of the second layer 71 is not particularly limited, and is, for example, 1 μm or more, preferably 5 μm or more. When the thickness is 1 μm or more, the unevenness of the pedestal surface and the wiring surface can be followed, and the adhesive sheet 7 can be filled without a gap. The thickness of the second layer 71 is, for example, 500 μm or less, and preferably 300 μm or less. When the thickness is 500 μm or less, variation in thickness and shrinkage / expansion during heating can be suppressed or prevented.

The shape of the adhesive sheet 7 when viewed in plan is not particularly limited, but is usually circular.

Examples of the adhesive force of the first adhesive layer 70 include those exemplified for the first adhesive layer 50. The description of the first adhesive layer 70 is the same as the content of the first adhesive layer 50.

The adhesive strength of the second layer 71 is preferably, for example, a 90 ° peel peel force for a silicon wafer under a temperature of 23 ± 2 ° C. and a peel speed of 300 mm / min is less than 0.30 N / 20 mm. More preferably, it is 20 N / 20 mm or less. When it is less than 0.30 N / 20 mm, the pedestal can be easily separated from the semiconductor wafer. On the other hand, the lower limit of the 90 ° peel strength is preferably 0.001 N / 20 mm or more, more preferably 0.005 N / 20 mm or more, and still more preferably 0.010 N / 20 mm or more. When it is 0.001 N / 20 mm or more, the semiconductor wafer can be fixed to the pedestal well, and back grinding and the like can be performed well.

The description of the second layer 71 is the same as the content of the second layer 51.

The manufacturing method of the adhesive sheet 7 is not particularly limited. For example, a solution containing a composition for forming the first adhesive layer 70 is applied to a structure having a large number of through holes, the through holes are filled with the solution, and a coating layer is formed on the structure. Can be manufactured.

When the second layer 71 has a non-woven structure as a skeleton, a non-woven structure is applied to the non-woven structure by applying a solution containing the composition for forming the first adhesive layer 70. It can be manufactured by filling the pores of the structure with the solution and forming a coating layer on the structure.

In the above description, the adhesive sheets 5 to 7 having a circular shape when viewed in plan have been described. However, the shape is not particularly limited, and may be another shape such as a polygon or an ellipse.

Further, the adhesive sheets 5 to 7 in which the shapes of the

second layers

51, 61, and 71 are circular when viewed in plan have been described. However, the shape is not particularly limited, and may be another shape such as a polygon or an ellipse.

[Process to attach to the pedestal]
In the following description, a case where the adhesive sheet 5 shown in FIG. 48 is used will be described. 54 to 59 are schematic cross-sectional views for explaining the outline of the semiconductor device manufacturing method according to the fifth embodiment of the present invention. After the step of preparing the adhesive sheet 5, the prepared adhesive sheet 5 is bonded to the base 1 with the lower surface of the adhesive sheet 5 as the bonding surface (see FIG. 54). The bonding method is not particularly limited, but a method by pressure bonding is preferable. The crimping is usually performed while pressing with a pressing means such as a crimping roll. The conditions for pressure bonding are preferably 20 ° C. to 150 ° C., 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, since the first adhesive layer 50 having a higher adhesive force than the second layer 51 is exposed on the lower surface, the adhesive sheet 5 can be firmly bonded to the base 1.

[Process for forming wiring]
Next, on the adhesive sheet 5, the wiring layer 2 having the connecting conductor portion 21 that can be connected to the electrode 31 of the semiconductor chip 3 and the wiring 26 is exposed so that the connecting conductor portion 21 is exposed on the upper surface of the wiring layer 2. (See FIG. 55). The wiring layer 2 has an external connection conductor 22 for electrical connection to the outside on the adhesive sheet 5 side. FIG. 55 shows the case where the connecting conductor portion 21 is convexly exposed on the upper surface of the wiring layer 2. In the fifth aspect of the present invention, the connecting conductor portion is exposed on the upper surface of the wiring layer. The upper surface of the connecting conductor portion may be flush with the upper surface of the wiring layer. In the adhesive sheet 5, since only the first adhesive layer 50 is exposed on the upper surface, the wiring layer formed on the adhesive sheet 50 can be more firmly fixed.

[Process for mounting semiconductor chip]
Next, as shown in FIG. 56, the connecting conductor portion 21 of the wiring layer 2 and the electrode 31 of the semiconductor chip 3 are connected, and the semiconductor chip 3 is mounted on the wiring layer 2 (wiring 26). In FIG. 56, the protrusions of the connecting conductor portion 21 and the electrode 31 after mounting are omitted. FIG. 56 shows a case where a plurality of semiconductor chips 3 are mounted on the wiring layer 2, but the number of semiconductor chips mounted on the wiring layer is not particularly limited, and may be one.

Next, as shown in FIG. 57, resin sealing with a resin 32 is performed so as to cover the semiconductor chip 3 as necessary. As the resin 32 used for resin sealing, a conventionally known one or the like can be appropriately used, and a conventionally known method can also be adopted as a resin sealing method.

[Process to separate from pedestal]
Next, as shown in FIG. 58, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1. Specifically, the base 1 is peeled off together with the adhesive sheet 5 with the surface of the adhesive sheet 5 opposite to the base 1 as an interface. When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. As described above, since the adhesive sheet 5 includes not only the first adhesive layer 50 but also the second layer 51 having a lower adhesive force than the first adhesive layer 50, the adhesive force of the first adhesive layer 50. If it is reduced, the base and the semiconductor chip with the wiring layer can be easily separated from each other by an external force.
The central portion 53 is formed by stacking the first adhesive layer 50 and the second layer 51. Therefore, the central portion 53 formed by stacking the first adhesive layer 50 and the second layer 51 has a relatively higher adhesive strength than the peripheral portion 54 formed only by the first adhesive layer 50. Is low. Therefore, if the adhesive force of the peripheral portion 54 is reduced at least, the base and the semiconductor chip with the wiring layer can be easily separated from each other by an external force. Moreover, since the 1st adhesive bond layer 50 is formed in the peripheral part 54 in the adhesive sheet 5, in the process of isolation | separation mentioned later, the 1st adhesive bond layer 50 is melt | dissolved with a solvent, or it is physically by a cutter, a laser, etc. It is easy to reduce the adhesive force of the first adhesive layer 50 by making a cut in the. As a method of reducing the adhesive force of the first adhesive layer 50, a method of lowering the adhesive force by dissolving the first adhesive layer 50 with a solvent, a physical method such as a cutter or laser is applied to the first adhesive layer 50. Examples thereof include a method of reducing the adhesive force by cutting a slit, a method of forming the first adhesive layer 50 with a material whose adhesive force is reduced by heating, and a method of reducing the adhesive force by heating.

Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 59). In addition, you may give the process of providing a solder ball with respect to the wiring layer 2 which peeled the base 1. FIG.

[Preparation of pedestal with adhesive sheet]
First, the base 1 is prepared (see FIG. 54). As the pedestal 1, the one described in the first aspect of the present invention can be used.

[Process to attach to the pedestal]
Next, the adhesive sheet 5 is bonded onto the base 1 (see FIG. 54). The adhesive sheet 5 has the 2nd layer 51 and the 1st adhesive bond layer 50 laminated | stacked on the 2nd layer 51 in the aspect which covers the upper surface and side surface of the 2nd layer 51 as already demonstrated. In this step, the adhesive sheet 5 is bonded to the base 1 with the lower surface of the adhesive sheet 5 as the bonding surface.

[Formation of wiring layer]
Next, the wiring layer 2 is formed on the adhesive sheet 5 of the base 1 (see FIG. 55). As a method for forming the wiring layer on the pedestal having the adhesive sheet, the method described in the first aspect of the present invention can be employed.

[Mounting process, peeling process, dicing]
Next, a chip is mounted on the wiring layer 2 obtained above (with the base 1 being peelable) (see FIG. 55). Thereafter, aging of the wiring layer 2 is performed, and further, resin sealing is performed on each chip 3 on the wiring layer 2 as necessary (see FIG. 57). For resin sealing, a sheet-like sealing resin sheet may be used, or a liquid resin sealing material may be used. Thereafter, the resin-sealed semiconductor chip 3 with the wiring layer 2 is separated from the base 1 (see FIG. 58). When the resin sealing is not performed, the semiconductor chip 3 with the wiring layer 2 that is not resin sealed is separated from the base 1. Thereafter, the semiconductor device 4 in which the semiconductor chip 3 is mounted on the wiring layer 2 is obtained by cutting as necessary (see FIG. 59). In mounting a chip on the wiring layer 2 (flip chip connection), an underfill resin may be used between the wiring layer 2 and the chip. The underfill resin may be a sheet or a liquid. In the above-described embodiment, the case where the resin sealing is performed after the chip is mounted has been described. Instead of the resin sealing, a conventionally known flip chip type semiconductor back film is formed on the chip. It may be used. The flip chip type semiconductor back film is a film for forming on the back surface of a chip (semiconductor element) flip-chip connected on an adherend. Details are disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-249739. Since it is disclosed, a description thereof is omitted here.

In the above description, as a method of forming wiring using the adhesive sheet 5, the surface of the adhesive sheet 5 on which the first adhesive layer 50 and the second layer 51 are exposed is attached to the base 1, and the adhesive sheet 5. The case where the wiring is formed on the surface where only the first adhesive layer 50 is exposed has been described. However, the method for forming the wiring using the adhesive sheet 5 is not particularly limited, and the surface of the adhesive sheet 5 on which only the first adhesive layer 50 is exposed is attached to the base 1, and the first adhesion of the adhesive sheet 5 is performed. A wiring may be formed on the surface where the agent layer 50 and the second layer 51 are exposed.
In the above description, the method of forming the wiring using the adhesive sheet 5 has been described. However, the wiring can be formed in the same manner as when the adhesive sheet 5 is used even if the adhesive sheet 6 or the adhesive sheet 7 is used. Can do.

The embodiment according to the fifth aspect of the present invention has been described above.

In the above-described first to fifth embodiments of the present invention, the case where the wiring is formed as a wiring layer has been described. However, the wiring in the first to fifth aspects of the invention is not limited to this example. The wirings according to the first to fifth aspects of the present invention may not be formed as a wiring layer. For example, the wiring may be formed as a single piece on an adhesive sheet.

In the semiconductor device manufacturing method according to the first to third aspects of the invention and the fifth aspect of the invention, a wiring is formed on a pedestal (for example, a long pedestal) having an adhesive sheet, and the wiring is formed on the wiring. The method includes mounting a plurality of workpieces, performing resin sealing, and then cutting to obtain a plurality of semiconductor devices. According to the method for manufacturing a semiconductor device, wiring for a plurality of semiconductor devices can be formed on one pedestal. In the first to third aspects of the invention and the fifth aspect of the invention, the method of manufacturing a semiconductor device includes forming a wiring on a pedestal having an adhesive sheet and mounting one workpiece on the wiring. Also included is a method of obtaining one semiconductor device by performing resin sealing.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a wiring on a base (for example, a long base) to which a temporary fixing sheet is fixed; mounting a plurality of workpieces on the wiring; And then cutting to obtain a plurality of semiconductor devices. According to the method for manufacturing a semiconductor device, wiring for a plurality of semiconductor devices can be formed on one pedestal. According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device comprising: forming a wiring on a pedestal to which a temporary fixing sheet is fixed; mounting a workpiece on the wiring; A method for obtaining a semiconductor device is also included.

The example of the method for manufacturing the semiconductor device according to the first to fifth aspects of the present invention has been described above. The method for manufacturing the semiconductor device according to the first to fifth aspects of the present invention is the same as that described above. The present invention is not limited and can be appropriately changed within the scope of the gist of the first to fifth inventions.

Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to the following examples unless it exceeds the gist.

[First Invention]
Each of the following examples corresponds to the first aspect of the present invention.

The components used in the examples will be described.
PMDA: pyromellitic dianhydride (molecular weight: 218.1)
DDE: 4,4′-diaminodiphenyl ether (molecular weight: 200.2)
D-4000: Polyether diamine manufactured by Heinzmann (molecular weight: 4023.5)
DMAc: N, N-dimethylacetamide NMP: N-methyl-2-pyrrolidone D-2000: polyether diamine manufactured by Heinzmann (molecular weight: 1990.8)
BPDA: 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride PPD: p-phenylenediamine

(Example 1)
<Preparation of First Adhesive Layer Solution and Second Layer Solution>
In an atmosphere under a nitrogen stream, in 1,041 g of N, N-dimethylacetamide (DMAc), 267.75 g of polyetherdiamine (D-4000), 78.48 g of 4,4′-diaminodiphenyl ether (DDE), and Pyromellitic dianhydride (PMDA) 100 g was mixed and reacted at 70 ° C. to obtain a first adhesive layer solution (polyamic acid solution A). The resulting first adhesive layer solution was cooled to room temperature (23 ° C.).
A second layer solution (polyamic acid solution B) was obtained in the same manner as the first adhesive layer solution except that the formulation in Table 1 was followed. The resulting second layer solution was cooled to room temperature (23 ° C.).
<Production of circular sheet>
The second layer solution is applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm), dried at 90 ° C. for 3 minutes, and the second layer is The sheet | seat which has is obtained.
A long polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, half-cut to a diameter of 198 mm with a Thomson mold, and punched out (punched with a Thomson mold) A circular sheet was obtained by removing the outside while leaving the inside. In addition, said half cut means the cut in the aspect which cuts a polyester film and a 2nd layer completely, and does not cut a separator completely (cut to the middle of a separator).
<Adhesive sheet>
The separator of the circular sheet was peeled off, and the first adhesive layer solution was applied onto the second layer of the circular sheet so as to have a diameter of 200 mm or more, and dried at 90 ° C. for 3 minutes. A long polyester film (thickness 25 μm, width 250 mm) was laminated on the dried first adhesive layer to obtain an adhesive sheet A having a cross-sectional shape shown in FIG. Specifically, the entire adhesive sheet A had a diameter of 200 mm and a thickness of 10 μm. The diameter of the second layer was 198 mm, and the thickness of the second layer was 2 μm. The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet A was 8 micrometers.

(Example 2)
<Preparation of first adhesive layer solution>
A first adhesive layer solution was obtained in the same manner as in Example 1 except that the composition according to Table 1 was followed.
<Preparation of adhesive sheet>
On a SUS foil (manufactured by Toyo Seikan Co., Ltd., SUS 304H-TA), Cu plating with a copper sulfate plating bath was performed so that the Cu film thickness was 0.5 μm to obtain a SUS foil with Cu plating. The obtained Cu-plated SUS foil was cooled to room temperature (23 ° C.).
The first adhesive layer solution was applied to a Cu-plated SUS foil and dried at 90 ° C. for 2 minutes. Next, the SUS foil was peeled to obtain a polyamic acid layer with Cu plating. Cu etching was performed on the obtained polyamic acid layer with Cu plating. As a result, a circular (195 mmφ (diameter 195 mm)) Cu plating portion was left, and the others were removed. From the above, an adhesive sheet B having the cross-sectional shape shown in FIG. 1 was obtained. Specifically, the entire adhesive sheet B had a diameter of 200 mm and a thickness of 10 μm. The diameter of the second layer was 195 mm, and the thickness of the second layer was 0.5 μm. The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet B was 9.5 micrometers. In Example 2, when forming the adhesive sheet, the shape in which the second layer was formed on the first adhesive layer (the shape in which the first adhesive layer does not exist on the side surface side of the second layer) However, while the second layer is as thin as 0.5 μm, the first adhesive layer is as thick as 10 μm, and the first adhesive layer is relatively soft (low elastic modulus). The second layer will be embedded in the first adhesive layer. Therefore, the adhesive sheet B of Example 2 has the cross-sectional shape shown in FIG.

(Example 3)
An adhesive sheet C was obtained in the same manner as in Example 1 except that the composition according to Table 1 was followed.

Example 4
<Production of circular sheet>
The second layer solution prepared in Example 1 was applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm) and dried at 90 ° C. for 3 minutes. A sheet having a second layer was obtained.
A long polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, half-cut to a diameter of 198 mm with a Thomson mold, and punched out (punched with a Thomson mold) The outer side was removed leaving the inner side) to obtain a circular sheet (thickness: 2.5 μm).
<Adhesive sheet>
The first adhesive layer solution prepared in Example 1 was applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm) and dried at 90 ° C. for 3 minutes. To obtain a sheet having a first adhesive layer.
A long polyester film (thickness 25 μm, width 250 mm) is laminated on the first adhesive layer of the obtained sheet, half-cut to a diameter of 198 mm with a Thomson mold, and a punched portion leaving the outside ( The inside (punched with a Thomson die) was removed to obtain a hollow sheet (thickness: 2.5 μm).
The separator of the circular sheet and the hollow sheet is peeled off and bonded so that the second layer of the circular sheet fits into the part where the first adhesive layer of the hollow sheet does not exist. An adhesive sheet D having a cross-sectional shape shown in 2 was obtained. Specifically, the entire adhesive sheet D had a diameter of 200 mm and a thickness of 2.5 μm. The diameter of the second layer was 198 mm, and the thickness of the second layer was 2.5 μm.

(Example 5)
An adhesive sheet similar to that of Example 1 was prepared, and this was used as an adhesive sheet E. The adhesive sheet E is used as an adhesive sheet having a cross-sectional shape shown in FIG.

(Comparative Example 1)
A single-layer adhesive sheet F made of the same first adhesive layer as in Example 1 was obtained. The adhesive sheet F was circular and had a diameter of 200 mm and a thickness of 10 μm.

<Measurement of peel force>
The composition according to Example 1 was applied to a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent so that the thickness after drying at 90 ° C. for 3 minutes was 20 μm. A first adhesive layer, a first adhesive layer having a composition according to Example 2, a first adhesive layer having a composition according to Example 3, and a first adhesive layer having a composition according to Comparative Example 1 were prepared.
The first adhesive layer according to Examples 1 to 3 and Comparative Example 1 was bonded to an 8-inch silicon wafer, imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours, and the first adhesive with a silicon wafer. A layer was obtained.
Composition according to Example 1 such that a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent has a thickness of 20 μm after drying at 90 ° C. for 3 minutes. A second layer having a composition according to Example 3 was prepared. Moreover, the 2nd layer of the composition which concerns on Example 2 was created so that the thickness after drying for 3 minutes at 90 degreeC might be set to 20 micrometers on SUS foil.
The second layer according to Example 1, Example 3, and Comparative Example 1 was bonded to an 8-inch silicon wafer, and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours. Two layers were obtained. The second layer according to Example 2 was bonded to an 8-inch silicon wafer.
Each sample (first adhesive layer or second layer) was processed to a width of 20 mm and a length of 100 mm, and a tensile tester (manufactured by Shimadzu Corp., Autograph AGS-H) was used at a temperature of 23 ° C. and 300 mm / A 90 ° peel evaluation was performed in minutes. The results are shown in Table 2.

<Process resistance evaluation>
The adhesive sheet A according to Example 1 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. The laminate was laminated on the pedestal with the surfaces exposed by both the first adhesive layer and the second layer as the bonding surfaces. Thereby, the adhesive sheet A with a base was obtained. Next, wiring was formed on the adhesive sheet A by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
The adhesive sheet B according to Example 2 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet B with a base was obtained. Next, wiring was formed on the adhesive sheet B in the same manner as described above.
The adhesive sheet C according to Example 3 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a pedestal made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet C with a base was obtained. Next, wiring was formed on the adhesive sheet C in the same manner as described above.
The adhesive sheet D according to Example 4 was roll laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a pedestal made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet D with a base was obtained. Next, wiring was formed on the adhesive sheet D in the same manner as described above.
The adhesive sheet E according to Example 5 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. The laminate was laminated on the pedestal with the surface exposed only by the first adhesive layer as the bonding surface. Thereby, the adhesive sheet E with a base was obtained. Next, wiring was formed on the adhesive sheet E by a semi-additive method.
The adhesive sheet F according to Comparative Example 1 was roll-laminated at a temperature of 90 ° C. and 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet F with a base was obtained. Next, wiring was formed on the adhesive sheet F in the same manner as described above.
As a result of the above wiring formation, the adhesive sheet does not peel from the pedestal, and the wiring being formed from the adhesive sheet does not peel off. Was evaluated as x. The results are shown in Table 2.

<Peelability evaluation>
The pedestal-attached adhesive sheet A according to Example 1 was obtained in the same manner as the process resistance evaluation. Next, a laser (YAG laser, output 1.5 W) is irradiated from the opposite side of the pedestal so as to form a circle having the same center as that of the adhesive sheet A and a diameter of 196 mm, and the first adhesive layer and the second adhesive layer. The layer was cut to the pedestal surface.
The base-attached adhesive sheet B according to Example 2 was obtained in the same manner as in the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a cutter so that the center was the same as that of the adhesive sheet B and had a diameter of 197 mm.
The pedestal-attached adhesive sheet C according to Example 3 was obtained in the same manner as the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a Thomson blade so that the center of the adhesive sheet C was the same and the diameter was 195 mm.
The pedestal-attached adhesive sheet D according to Example 4 was obtained in the same manner as in the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a Thomson blade so as to be a circle having the same center as the adhesive sheet D and a diameter of 196 mm.
The pedestal-attached adhesive sheet E according to Example 5 was obtained in the same manner as the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a Thomson blade so as to be a circle having the same center as the adhesive sheet E and a diameter of 196 mm.
The pedestal-attached adhesive sheet F according to Comparative Example 1 was obtained in the same manner as in the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a cutter so that the center was the same as the adhesive sheet F and had a diameter of 197 mm. The central portions of the adhesive sheets A to F after the cut were adsorbed with vacuum tweezers and pulled up. The case where the adhesive sheet or a part of the adhesive sheet was peeled off from the pedestal was evaluated as ◯, and the case where it was not peeled off was evaluated as x. The results are shown in Table 2.

[Second Invention]
The following examples and the like correspond to the second aspect of the present invention.

(Example 1)
<Preparation of First Adhesive Layer Solution and Second Layer Solution>
In an atmosphere under a nitrogen stream, 342.16 g of polyetherdiamine (D-4000), 75.28 g of 4,4′-diaminodiphenyl ether (DDE) in 944.16 g of N-methyl-2-pyrrolidone (NMP), And 100 g of pyromellitic dianhydride (PMDA) was mixed and reacted at 70 ° C. to obtain a first adhesive layer solution (polyamic acid solution A). The resulting first adhesive layer solution was cooled to room temperature (23 ° C.).
A second layer solution (polyamic acid solution B) was obtained in the same manner as the first adhesive layer solution except that the composition according to Table 3 was followed. The resulting second layer solution was cooled to room temperature (23 ° C.).
<Production of circular sheet>
The second layer solution is applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm) and dried at 90 ° C. for 3 minutes. A sheet having a thickness of 100 μm was obtained.
A long polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, half-cut to a diameter of 198 mm with a Thomson mold, and punched out (punched with a Thomson mold) A circular sheet was obtained by removing the outside while leaving the inside. In addition, said half cut means the cut in the aspect which cuts a polyester film and a 2nd layer completely, and does not cut a separator completely (cut to the middle of a separator).
<Adhesive sheet>
The separator of the circular sheet was peeled off, and the first adhesive layer solution was applied on the second layer of the circular sheet so as to have a diameter of 200 mm or more and a thickness of 100 μm, and dried at 90 ° C. for 3 minutes. . A long polyester film (thickness 25 μm, width 250 mm) was laminated on the dried first adhesive layer to obtain an adhesive sheet A having a cross-sectional shape shown in FIG. Specifically, the entire adhesive sheet A had a diameter of 200 mm and a thickness of 100 μm. The diameter of the second layer was 196 mm, and the thickness of the second layer was 100 μm.

(Example 2)
<Preparation of first adhesive layer solution>
A first adhesive layer solution was obtained in the same manner as in Example 1 except that the composition according to Table 3 was followed.
<Preparation of adhesive sheet>
On a SUS foil (manufactured by Toyo Seikan Co., Ltd., SUS 304H-TA), Cu plating with a copper sulfate plating bath was performed so that the Cu film thickness was 0.5 μm to obtain a SUS foil with Cu plating.
The first adhesive layer solution was applied to a Cu-plated SUS foil and dried at 90 ° C. for 2 minutes. Next, the SUS foil was peeled to obtain a polyamic acid layer with Cu plating. Cu etching was performed on the obtained polyamic acid layer with Cu plating. As a result, a circular (195 mm diameter) Cu plating portion was left and the others were removed. From the above, an adhesive sheet B having the cross-sectional shape shown in FIG. 26 was obtained. Specifically, the entire adhesive sheet B had a diameter of 199 mm and a thickness of 10 μm. The diameter of the second layer was 195 mm, and the thickness of the second layer was 0.5 μm. The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet B was 9.5 micrometers. In Example 2, when forming the adhesive sheet, the shape in which the second layer was formed on the first adhesive layer (the shape in which the first adhesive layer does not exist on the side surface side of the second layer) However, while the second layer is as thin as 0.5 μm, the first adhesive layer is as thick as 10 μm, and the first adhesive layer is relatively soft (low elastic modulus). The second layer will be embedded in the first adhesive layer. Therefore, the adhesive sheet B of Example 2 has the cross-sectional shape shown in FIG.

(Example 3)
<Preparation of First Adhesive Layer Solution and Second Layer Solution>
A solution for the first adhesive layer and a solution for the second layer were obtained in the same manner as in Example 1 except that the formulation in Table 3 was followed.
<Production of circular sheet>
The second layer solution is applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm), dried at 90 ° C. for 3 minutes, and the second layer is The sheet | seat which has is obtained.
A long polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, half-cut with a Thomson mold to a diameter of 195 mm, and punched out (punched with a Thomson mold) A circular sheet was obtained by removing the outside while leaving the inside. In addition, said half cut means the cut in the aspect which cuts a polyester film and a 2nd layer completely, and does not cut a separator completely (cut to the middle of a separator).
<Adhesive sheet>
The separator of the circular sheet was peeled off, and the first adhesive layer solution was applied onto the second layer of the circular sheet so as to have a diameter of 200 mm or more, and dried at 90 ° C. for 3 minutes. A long polyester film (thickness 25 μm, width 250 mm) was laminated on the dried first adhesive layer to obtain an adhesive sheet C having a cross-sectional shape shown in FIG. Specifically, the diameter of the entire adhesive sheet C was 199 mm, and the thickness was 10 μm. The diameter of the second layer was 195 mm, and the thickness of the second layer was 2 μm. The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet C was 8 micrometers. The adhesive sheet C of Example 3 has the cross-sectional shape shown in FIG.

(Comparative Example 1)
A single-layer adhesive sheet E made of the same first adhesive layer as in Example 1 was obtained. The adhesive sheet E was circular and had a diameter of 200 mm and a thickness of 100 μm.

<Measurement of peel force>
The composition according to Example 1 was applied to a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent so that the thickness after drying at 90 ° C. for 3 minutes was 20 μm. A first adhesive layer, a first adhesive layer having a composition according to Example 2, a first adhesive layer having a composition according to Example 3, and a first adhesive layer having a composition according to Comparative Example 1 were prepared.
The first adhesive layer according to Examples 1 to 3 and Comparative Example 1 was bonded to an 8-inch silicon wafer, imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours, and the first adhesive with a silicon wafer. A layer was obtained.
Composition according to Example 1 such that a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent has a thickness of 20 μm after drying at 90 ° C. for 3 minutes. A second layer having a composition according to Example 3 was prepared. Moreover, the 2nd layer of the composition which concerns on Example 2 was created so that the thickness after drying for 3 minutes at 90 degreeC might be set to 20 micrometers on SUS foil.
The second layer according to Example 1, Example 3, and Comparative Example 1 was bonded to an 8-inch silicon wafer, and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours. Two layers were obtained. The second layer according to Example 2 was bonded to an 8-inch silicon wafer.
Each sample (first adhesive layer or second layer) was processed to a width of 20 mm and a length of 100 mm, and a tensile tester (manufactured by Shimadzu Corp., Autograph AGS-H) was used at a temperature of 23 ° C. and 300 mm / A 90 ° peel evaluation was performed in minutes. The results are shown in Table 4.

<Process resistance evaluation>
The adhesive sheet A according to Example 1 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet A with a base was obtained. Next, wiring was formed on the adhesive sheet A by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
Adhesive sheet B according to Example 2 is a pedestal made of a silicon wafer having a diameter of 200 mm, and a surface opposite to the surface on which only the first adhesive layer is exposed is bonded to a surface of 90 ° C., After roll lamination at a pressure of 0.1 MPa, imidization was performed at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet B with a base was obtained. Next, wiring was formed on the adhesive sheet B in the same manner as described above.
The adhesive sheet C according to Example 3 is rolled at a temperature of 90 ° C. and a pressure of 0.1 MPa, with the surface on the side where only the first adhesive layer is exposed being bonded to a base made of a silicon wafer having a diameter of 200 mm. After laminating, imidization was performed at 300 ° C. for 1.5 hours under a nitrogen atmosphere. Thereby, the adhesive sheet C with a base was obtained. Next, wiring was formed on the adhesive sheet C in the same manner as described above.
The adhesive sheet E according to Comparative Example 1 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet E with a base was obtained. Next, a wiring was formed on the adhesive sheet E in the same manner as described above.
As a result of the above wiring formation, the adhesive sheet does not peel from the pedestal, and the wiring being formed from the adhesive sheet does not peel off. Was evaluated as x. The results are shown in Table 4.

<Peelability evaluation>
The pedestal-attached adhesive sheet A according to Example 1 was obtained in the same manner as the process resistance evaluation. Next, a laser (YAG laser, output 1.5 W) is irradiated from the opposite side of the pedestal so as to form a circle having the same center as that of the adhesive sheet A and a diameter of 196 mm, and the first adhesive layer and the second adhesive layer. The layer was cut to the pedestal surface.
The base-attached adhesive sheet B according to Example 2 was obtained in the same manner as in the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a cutter so that the center was the same as that of the adhesive sheet B and had a diameter of 197 mm.
The pedestal-attached adhesive sheet C according to Example 3 was obtained in the same manner as the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a Thomson blade so that the center of the adhesive sheet C was the same and the diameter was 195 mm.
A base-attached adhesive sheet E according to Comparative Example 1 was obtained in the same manner as in the process resistance evaluation. Next, from the opposite side to the pedestal, the first adhesive layer and the second layer were cut to the pedestal surface with a cutter so that the center of the adhesive sheet E was the same and the diameter was 197 mm. The central portions of the adhesive sheets A to C and E after the cut were adsorbed with vacuum tweezers and pulled up. The case where the adhesive sheet or a part of the adhesive sheet was peeled off from the pedestal was evaluated as ◯, and the case where it was not peeled off was evaluated as x. The results are shown in Table 4.

[Third Invention]
Each of the following examples corresponds to the third aspect of the present invention.

(Example 1)
<Preparation of First Adhesive Layer Solution and Second Layer Solution>
In 1018.81 g of N-methyl-2-pyrrolidone (NMP) in an atmosphere under a nitrogen stream, 350.48 g of polyetherdiamine (D-4000), 74.36 g of 4,4′-diaminodiphenyl ether (DDE), And 100 g of pyromellitic dianhydride (PMDA) was mixed and reacted at 70 ° C. to obtain a first adhesive layer solution (polyamic acid solution A). The resulting first adhesive layer solution was cooled to room temperature (23 ° C.).
A second layer solution (polyamic acid solution B) was obtained in the same manner as the first adhesive layer solution except that the formulation in Table 5 was followed. The resulting second layer solution was cooled to room temperature (23 ° C.).
<Preparation of adhesive sheet>
The second layer solution is applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm), dried at 90 ° C. for 3 minutes, and the second layer is A sheet having a thickness of 8 μm was obtained.
The first adhesive layer solution is applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm) and dried at 90 ° C. for 3 minutes. A sheet (thickness 2 μm) having a layer was obtained.
The sheet having the second layer and the sheet having the first adhesive layer are bonded together (bonding conditions: 95 ° C., 0.4 MPa), and the first adhesive layer and the second layer are A laminated adhesive sheet A was obtained.

(Example 2)
An adhesive sheet B was obtained in the same manner as in Example 1 except that the composition according to Table 5 was followed.

(Example 3)
An adhesive sheet C was obtained in the same manner as in Example 1 except that the composition according to Table 5 was followed.

(Comparative Example 1)
A single-layer adhesive sheet E made of the same first adhesive layer as in Example 1 was obtained.

<Measurement of peeling force on silicon wafer>
The composition according to Example 1 was applied to a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent so that the thickness after drying at 90 ° C. for 3 minutes was 20 μm. A first adhesive layer, a first adhesive layer having a composition according to Example 2, a first adhesive layer having a composition according to Example 3, and a first adhesive layer having a composition according to Comparative Example 1 were prepared.
The first adhesive layer according to Examples 1 to 3 and Comparative Example 1 was bonded to an 8-inch silicon wafer, imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours, and the first adhesive with a silicon wafer. A layer was obtained.
Composition according to Example 1 such that a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent has a thickness of 20 μm after drying at 90 ° C. for 3 minutes. The second layer, the second layer having the composition according to Example 2, and the second layer having the composition according to Example 3 were prepared.
The second layer according to Examples 1 to 3 and Comparative Example 1 was bonded to an 8-inch silicon wafer, and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours. Two layers were obtained.
Each sample (first adhesive layer or second layer) was processed to a width of 20 mm and a length of 100 mm, and a tensile tester (manufactured by Shimadzu Corp., Autograph AGS-H) was used at a temperature of 23 ° C. and 300 mm / A 90 ° peel evaluation was performed in minutes. The results are shown in Table 6.

<Measurement of peel force between first adhesive layer and second layer>
The adhesive sheets according to Examples and Comparative Examples were processed to a width of 20 mm and a length of 100 mm, and 180 ° at a temperature of 23 ° C. and 300 mm / min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). Peel evaluation was performed. The results are shown in Table 6.

<Process resistance evaluation>
The adhesive sheet A according to Example 1 was roll laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a pedestal made of a silicon wafer having a diameter of 200 mm with the first adhesive layer side as a bonding surface, and then at 1. Imidization was performed in a nitrogen atmosphere for 5 hours. Thereby, the adhesive sheet A with a base was obtained. Next, wiring was formed on the adhesive sheet A by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
The adhesive sheet B according to Example 2 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a pedestal made of a silicon wafer having a diameter of 200 mm with the second layer side as a bonding surface, and then 1.5 ° C. at 300 ° C. Imidization was performed for a time under a nitrogen atmosphere. Thereby, the adhesive sheet B with a base was obtained. Next, wiring was formed on the adhesive sheet B in the same manner as described above.
The adhesive sheet C according to Example 3 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a pedestal made of a silicon wafer having a diameter of 200 mm with the first adhesive layer side as a bonding surface, and then 1. Imidization was performed in a nitrogen atmosphere for 5 hours. Thereby, the adhesive sheet C with a base was obtained. Next, wiring was formed on the adhesive sheet C in the same manner as described above.
The adhesive sheet E according to Comparative Example 1 was roll-laminated at a temperature of 90 ° C. and a pressure of 0.1 MPa on a base made of a silicon wafer having a diameter of 200 mm, and then imidized at 300 ° C. for 1.5 hours in a nitrogen atmosphere. Thereby, the adhesive sheet E with a base was obtained. Next, a wiring was formed on the adhesive sheet E in the same manner as described above.
As a result of the above wiring formation, the adhesive sheet does not peel from the pedestal, and the wiring being formed from the adhesive sheet does not peel off. Was evaluated as x. The results are shown in Table 6.

<Peelability evaluation>
The adhesive sheet A with a pedestal according to Example 1 was prepared in the same manner as in the process resistance evaluation, and wiring was further formed. Thereafter, the device wafer was mounted and resin-sealed. Next, it heated at 250 degreeC for 10 minute (s).
The adhesive sheet B with a pedestal according to Example 2 was created in the same manner as the process resistance evaluation, and wiring was further formed. Thereafter, the device wafer was mounted and resin-sealed. Next, it was immersed in SC-1 cleaning solution (ammonia water: hydrogen peroxide solution: water = 1: 1: 5, 70 ° C.), and ultrasonic waves of 24 KHz were applied for 10 minutes.
The adhesive sheet C with a pedestal according to Example 3 was prepared in the same manner as the process resistance evaluation, and wiring was further formed. Thereafter, the device wafer was mounted and resin-sealed. Next, the contact surface between the first adhesive layer and the second layer was cut with a cutter to form a gap, and then a sharp metal jig (12 °) was inserted and peeled into the gap.
In the same manner as in the process resistance evaluation, an adhesive sheet E with a pedestal according to Comparative Example 1 was created, and wiring was further formed. Thereafter, the device wafer was mounted and resin-sealed. Next, it heated at 250 degreeC for 10 minute (s).
After the above heat treatment, the SC-1 cleaning solution, or the stripper treatment by the carter, the pedestal and the resin part of the device wafer after resin sealing are adsorbed by a vertical stripper (manufactured by Nitto Seiki, HSA840-WS) and vertically It peeled. The case where the adhesive sheet peeled from the pedestal was evaluated as ◯, and the case where it did not peel was evaluated as x. The results are shown in Table 6.

[Fourth Invention]
Each of the following examples corresponds to the fourth aspect of the present invention.

The components used in the examples will be described.
PMDA: pyromellitic dianhydride (molecular weight: 218.1)
DDE: 4,4′-diaminodiphenyl ether (molecular weight: 200.2)
D-4000: Polyether diamine manufactured by Heinzmann (molecular weight: 4023.5)
DMAc: N, N-dimethylacetamide BPDA: 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride PPD: p-phenylenediamine SD4587L PSA: manufactured by Toray Dow, silicone resin SRX212: manufactured by Toray Dow, curing agent

(Example 1)
<Preparation of temporary fixing sheet solution and adhesive layer solution>
In an atmosphere under a nitrogen stream, in 2508 g of N, N-dimethylacetamide (DMAc), 27.67 g of polyetherdiamine (D-4000), 90.43 g of 4,4′-diaminodiphenyl ether (DDE), and pyro 100 g of merit acid dianhydride (PMDA) was mixed and reacted at 70 ° C. to obtain a temporary fixing sheet solution (polyamic acid solution A). The resulting temporary fixing sheet solution was cooled to room temperature (23 ° C.).
An adhesive layer solution (polyamic acid solution B) was obtained in the same manner as the temporary fixing sheet solution except that the composition according to Table 7 was followed. The obtained adhesive layer solution was cooled to room temperature (23 ° C.).
<Temporary fixing sheet>
The temporary fixing sheet solution is applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm), dried at 90 ° C. for 3 minutes, and temporarily fixed sheet A Got.
<Temporary fixing sheet with adhesive layer>
Two sheets of the temporary fixing sheet A obtained were used, one was punched into a circle having a radius 0.5 mm smaller than the pedestal, and the other was punched into a circle having a radius 0.3 mm smaller than the pedestal. Were bonded to form a recess (see FIG. 47). The adhesive layer solution was applied to the concave portion and dried at 90 ° C. for 3 minutes. This was designated as temporary fixing sheet A with an adhesive layer.

(Example 2)
A temporary fixing sheet B was obtained in the same manner as the temporary fixing sheet A of Example 1 except that the composition according to Table 7 was followed. Moreover, the solution for adhesive bond layers was produced by the method similar to Example 1 except the point according to the mixing | blending of Table 7.
<Temporary fixing sheet with adhesive layer>
The obtained temporary fixing sheet B was punched into a circle having a radius smaller than the pedestal by 0.1 mm. The temporary fixing sheet B after being punched was placed on the pedestal, and the adhesive layer solution was applied to the inclined portion of the pedestal and dried at 90 ° C. for 3 minutes (see FIG. 40B). This was designated as a temporary fixing sheet B with an adhesive layer.

(Example 3)
A temporary fixing sheet C was obtained in the same manner as the temporary fixing sheet A of Example 1 except that the composition according to Table 7 was followed. Moreover, the solution for adhesive bond layers was produced by the method similar to Example 1 except the point according to the mixing | blending of Table 7.
<Temporary fixing sheet with adhesive layer>
Using the two temporary fixing sheets C obtained, one sheet is punched into a circle having a radius 2 mm smaller than the pedestal, and the other sheet is stamped into a circle having a radius 0.3 mm smaller than the pedestal, and these are pasted. Together, a recess was formed (see FIG. 47). The adhesive layer solution was applied to the concave portion and dried at 90 ° C. for 3 minutes. This was designated as temporary fixing sheet C with an adhesive layer.

(Comparative Example 1)
The same adhesive layer solution as in Example 1 was applied to a separator (long polyester film treated on one side with a silicone-based release agent: thickness 38 μm, width 250 mm), and dried at 90 ° C. for 3 minutes. A single-layer adhesive sheet F composed of an adhesive layer was obtained.

<Measurement of peel force>
The composition according to Example 1 was applied to a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent so that the thickness after drying at 90 ° C. for 3 minutes was 20 μm. A temporary fixing sheet, a temporary fixing sheet having the composition according to Example 2, and a temporary fixing sheet having the composition according to Example 3 were prepared.
The temporary fixing sheets according to Examples 1 to 3 were bonded to an 8-inch silicon wafer and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours to obtain a temporary fixing sheet with a silicon wafer.
Composition according to Example 1 such that a separator made of a long polyester film (thickness 38 μm, width 250 mm) treated on one side with a silicone-based release agent has a thickness of 20 μm after drying at 90 ° C. for 3 minutes. Adhesive layer having the composition according to Example 2, the adhesive layer having the composition according to Example 3, and the adhesive layer having the composition according to Comparative Example 1 were prepared.
The adhesive layers according to Examples 1 to 3 and Comparative Example 1 were bonded to an 8-inch silicon wafer and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours to obtain an adhesive layer with a silicon wafer. .
Each sample (sheet for temporary fixing or adhesive layer) is processed to a width of 20 mm and a length of 100 mm, and using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C. and 300 mm / min. 90 ° peel evaluation was performed. The results are shown in Table 8.

<Process resistance evaluation>
The temporary fixing sheet A with an adhesive layer according to Example 1 was roll-laminated on a pedestal made of a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C. and a pressure of 0.1 MPa. At this time, the adhesive layer of the temporary fixing sheet A with the adhesive layer was attached so that the adhesive layer was positioned on the inclined portion of the pedestal. Thereby, the sheet | seat A for temporary fixing with a base was obtained. Next, wiring was formed on the temporary fixing sheet A by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
The temporary fixing sheet B according to Example 2 was roll-laminated on a base made of a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C. and a pressure of 0.1 MPa. Next, the adhesive layer solution according to Example 2 was applied to the inclined portion of the pedestal edge, and was cured by heating at a temperature of 120 ° C. for 10 minutes. Thereby, the sheet | seat B for temporary fixing with a base was obtained. Next, wiring was formed on the temporary fixing sheet B by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
The adhesive layer solution according to Example 3 was applied to an inclined portion of an end portion of a base made of a silicon wafer having a diameter of 200 mm. Next, the temporary fixing sheet C according to Example 3 was roll-laminated on the pedestal at a temperature of 90 ° C. and a pressure of 0.1 MPa. Thereafter, the adhesive layer solution was cured by heating at a temperature of 150 ° C. for 5 minutes. Thereby, the sheet | seat C for temporary fixing with a base was obtained. Next, wiring was formed on the temporary fixing sheet C by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
The adhesive sheet F according to Comparative Example 1 was roll-laminated on a base made of a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C. and a pressure of 0.1 MPa. Thereby, the adhesive layer F with a base was obtained. Next, wiring was formed on the adhesive layer F by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.

<Peelability evaluation>
The pedestal-attached temporary fixing sheet A according to Example 1 was obtained in the same manner as in the process resistance evaluation. Next, a laser (YAG laser, output 1.5 W) was irradiated from the side opposite to the pedestal, and cut to the pedestal surface. At this time, the cut was inside the adhesive layer (see FIG. 47).
In the same manner as in the above process resistance evaluation, a tentative fixing sheet B according to Example 2 was obtained. Next, only the temporary fixing sheet was cut with a cutter from an obliquely upward direction (see FIG. 45).
In the same manner as the process resistance evaluation, a pedestal-attached temporary fixing sheet C according to Example 3 was obtained. Next, only the temporary fixing sheet was cut with a cutter from an obliquely upward direction (see FIG. 45).
The base-attached adhesive layer F according to Comparative Example 1 was obtained in the same manner as in the process resistance evaluation. Next, only the adhesive layer F was cut obliquely from above with a cutter.
The central part of the temporary fixing sheets A to C after the cutting and the central part of the adhesive layer F were adsorbed with vacuum tweezers and pulled up. The case where the sheet | seat for temporary fixing or the adhesive bond layer peeled from the base was evaluated as x, and the case where it did not peel was evaluated as x. The results are shown in Table 8.

[Fifth Invention]
Each of the following examples corresponds to the fifth aspect of the present invention.

The components used in the examples will be described.
PMDA: pyromellitic dianhydride (molecular weight: 218.1)
DDE: 4,4′-diaminodiphenyl ether (molecular weight: 200.2)
D-4000: Polyether diamine manufactured by Heinzmann (molecular weight: 4023.5)
DMAc: N, N-dimethylacetamide NMP: N-methyl-2-pyrrolidone D-2000: polyether diamine manufactured by Heinzmann (molecular weight: 1990.8)
BPDA: 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride PPD: p-phenylenediamine separator (long polyester film treated on one side with a silicone release agent)

(Example 1)
In an atmosphere under a nitrogen stream, D-4000 365 g, DDE 74 g, and PMDA 100 g were mixed and reacted at 70 ° C. in 1257 g of DMAc, and then cooled to room temperature (23 ° C.). An adhesive solution was obtained.
A second adhesive solution was obtained in the same manner as the first adhesive solution except that the composition according to Table 9 was followed. The second adhesive solution is applied to the separator and dried at 90 ° C. for 3 minutes to produce a sheet having a coating layer of the second adhesive solution. A sheet was obtained. The shape of the through hole when the perforated sheet was viewed in plan was circular, and the area of each through hole when the perforated sheet was viewed in plan was 78.5 μm ² . The diameter of each through hole was 10 μm. The aperture ratio was 50%.
The first adhesive solution was applied to the perforated sheet and its periphery (region around the perforated sheet), the through holes were filled with the first adhesive solution, and an application layer of the first adhesive solution was formed. Then, it was made to dry for 3 minutes at 90 degreeC, and the adhesive sheet of the shape of Embodiment 1 shown to FIG. 48, FIG. 49 was obtained.
The entire adhesive sheet had a diameter of 200 mm and a thickness of 100 μm.
The diameter of the second layer was 196 mm, and the thickness of the second layer was 1 μm.
The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet was 99 micrometers.

(Example 2)
A first adhesive solution was obtained in the same manner as in Example 1 except that the composition according to Table 9 was followed.
An adhesive sheet having the shape of Embodiment 1 shown in FIGS. 48 and 49 was obtained in the same manner as in Example 1 except that an aluminum mesh having an aperture ratio of 80% was used instead of the perforated sheet.
The entire adhesive sheet had a diameter of 200 mm and a thickness of 120.5 μm.
The diameter of the second layer was 198 mm, and the thickness of the second layer was 0.5 μm.
The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet was 120 micrometers.

(Example 3)
The point which obtained the 1st adhesive solution and the 2nd adhesive solution according to the mixing | blending of Table 9, the shape of the through-hole when a perforated sheet is planarly viewed, and the area of each through-hole are 7.0 mm ² The adhesive sheet having the shape of Embodiment 1 shown in FIGS. 48 and 49 was obtained in the same manner as in Example 1, except that the opening ratio was 10%.
The entire adhesive sheet had a diameter of 200 mm and a thickness of 100 μm.
The diameter of the second layer was 197 mm, and the thickness of the second layer was 1 μm.
The thickness of the 1st adhesive bond layer in the center part of the adhesive sheet was 99 micrometers.

(Comparative Example 1)
A first adhesive solution was obtained in the same manner as in Example 1 except that the composition according to Table 9 was followed.
The first adhesive solution was applied to the separator and dried at 90 ° C. for 3 minutes to obtain a single-layer adhesive sheet made of the first adhesive. The adhesive sheet was circular and had a diameter of 200 mm and a thickness of 150 μm.

[Measurement of adhesive strength of first adhesive layer]
The surface consisting only of the first adhesive layer (the first adhesive solution coating layer) of the adhesive sheet was bonded to an 8-inch silicon wafer and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours to form silicon. An adhesive sheet with a wafer was obtained.
The adhesive sheet with a silicon wafer was processed into a width of 20 mm and a length of 100 mm, and a 90 ° peel evaluation was performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C. and 300 mm / min. The results are shown in Table 10.

[Measurement of adhesive strength of perforated sheet and aluminum mesh (structure with many through holes)]
(Example 1, Example 3)
The perforated sheets of Examples 1 and 3 were bonded to an 8-inch silicon wafer and imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours to obtain a perforated sheet with a silicon wafer.
A perforated sheet with a silicon wafer was processed to a width of 20 mm and a length of 100 mm, and a 90 ° peel evaluation was performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C. and 300 mm / min. . The results are shown in Table 10.
(Example 2)
The aluminum mesh was bonded to an 8-inch silicon wafer to obtain an aluminum mesh with a silicon wafer. The obtained aluminum mesh with a silicon wafer was processed into a width of 20 mm and a length of 100 mm, and a 90 ° peel evaluation was performed at a temperature of 23 ° C. and 300 mm / min using a tensile tester (manufactured by Shimadzu Corp., Autograph AGS-H). went. The results are shown in Table 10.

[Measurement of adhesive strength of second layer]
A second layer (a second layer comprising a perforated sheet or an aluminum mesh and a first adhesive filled in the through holes) is cut out from the adhesive sheet, and the cut second layer is cut into an 8-inch silicon wafer. And imidized in a nitrogen atmosphere at 300 ° C. for 1.5 hours to obtain a second layer with a silicon wafer.
A second layer with a silicon wafer is processed to a width of 20 mm and a length of 100 mm, and a 90 ° peel evaluation is performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C. and 300 mm / min. It was. The results are shown in Table 10.

<Process resistance evaluation>
(Examples 1 to 3)
The surfaces on which the first adhesive layer and the second layer of the adhesive sheets of Examples 1 to 3 were exposed were attached to a pedestal (a silicon wafer having a diameter of 200 mm and a thickness of 726 μm). The pasting was performed by roll lamination at a temperature of 90 ° C. and a pressure of 0.1 MPa. Thereafter, imidization was performed at 300 ° C. for 1.5 hours under a nitrogen atmosphere. Thereby, the adhesive sheet with a base was obtained. Next, wiring was formed on the adhesive sheet by a semi-additive method. Specifically, it was formed by the method described in the above embodiment.
(Comparative Example 1)
An adhesive sheet with a pedestal was prepared in the same manner as in Examples 1 to 3, and then wiring was formed on the adhesive sheet by a semi-additive method.
As a result of the above wiring formation, the adhesive sheet does not peel from the pedestal, and the wiring being formed from the adhesive sheet does not peel off. Was evaluated as x. The results are shown in Table 10.

<Peelability evaluation>
A base-attached adhesive sheet was obtained by the same method as in the process resistance evaluation.
Using a Thomson blade, a cut was made inward from the side surface of the adhesive sheet layer. The cut was made until the second layer was reached. After cutting, the center part of the adhesive sheet was adsorbed with vacuum tweezers and pulled up. The case where the adhesive sheet or a part of the adhesive sheet was peeled off from the pedestal was evaluated as ◯, and the case where it was not peeled off was evaluated as x. The results are shown in Table 10.

Claims

A method of manufacturing a semiconductor device having a structure in which a work is mounted on wiring,
An adhesive sheet having a first adhesive layer and a second layer having a lower adhesive force after being attached to a pedestal than the first adhesive layer, wherein at least a peripheral portion of the adhesive sheet is the first adhesive A step of preparing an adhesive sheet formed by the agent layer;
Bonding the adhesive sheet to a pedestal;
Forming a wiring on the adhesive sheet after being bonded to the pedestal;
Mounting a workpiece on the wiring;
And a step of separating a work with wiring from the pedestal after the mounting.
The adhesive sheet is formed by laminating the first adhesive layer and the second layer at the center part inside the peripheral part,
2. The semiconductor according to claim 1, wherein the step of bonding to the pedestal is a step of bonding the adhesive sheet to the pedestal with the surface on the side where the second layer is exposed as the bonding surface. Device manufacturing method.
2. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive sheet is formed by the second layer at a central portion inside the peripheral portion.
The adhesive sheet is formed by laminating the first adhesive layer and the second layer at the center part inside the peripheral part,
The step of bonding to the pedestal is a step of bonding the adhesive sheet to the pedestal with the surface on the side where only the first adhesive layer is exposed as the bonding surface. Semiconductor device manufacturing method.
An adhesive sheet used in the method for manufacturing a semiconductor device according to any one of claims 1 to 4.