TW201417162A - Method for manufacturing semiconductor device and bonding sheet - Google Patents

Abstract

The purpose of the present invention is to provide a method for manufacturing a semiconductor device, which is capable of easily manufacturing a semiconductor device in cases where the semiconductor device is manufactured by mounting a workpiece on a wiring line that has been formed on a supporting base and then separating the workpiece with the wiring line from the supporting base. This method for manufacturing a semiconductor device comprises: a step for preparing a bonding sheet which has a first adhesive layer and a second layer that exhibits lower adhesion to a supporting base than the first adhesive layer after bonding, with at least the peripheral portion thereof being formed of the first adhesive layer; a step for bonding the bonding sheet to the supporting base, while using the lower surface as a bonding surface; a step for forming a wiring line on the bonding sheet that has been bonded to the supporting base; a step for mounting a workpiece on the wiring line; and a step for separating the workpiece with the wiring line from the supporting base after the mounting.

Description

Semiconductor device manufacturing method and film

The present invention relates to a method of fabricating a semiconductor device and an adhesive sheet.

In the manufacturing process of the semiconductor device, there is a case where the device is subjected to specific processing after temporarily fixing the device to the susceptor, and then the susceptor is separated (for example, refer to Patent Document 1 and Patent Document 2) .

Patent Document 1 discloses a method in which a device wafer as a first substrate and a carrier substrate as a second substrate are pressure-bonded without forming a strong bonding layer, and the periphery of the filling layer is filled. The material is bonded and hardened, thereby forming edge bonding to bring the first substrate and the second substrate into contact. Patent Document 1 discloses that a desired processing step is performed in a state where the first substrate and the second substrate are next, and then the first substrate and the second substrate are separated. The separation system first dissolves the edge bonding in a solvent or performs laser cutting, and thereafter applies a low mechanical force to separate the first substrate from the second substrate.

Further, Patent Document 2 provides a laminate in which a group consisting of a polymer and an oligomer selected from the group consisting of quinone imine, amidoximine, and amidoxime-oxime is selected. A bonding composition layer of a compound in a group of a free oligomer and a polymer, wherein the first substrate and the second substrate are bonded together, and a wafer bonding method including exposing the laminated body to The first substrate and the second substrate are separated at a temperature sufficient to soften the bonding layer.

On the other hand, as a method of connecting (mounting) a wafer to the outside, a method of connecting the specific portion of the wiring to the electrode position of the wafer is used. (eg flip chip bonding). The external wiring is formed separately from the wafer by wiring or the like formed on a circuit board for packaging sealed with a wafer or a general circuit board on which a plurality of other components are mounted. Further, when the wafer is connected to the circuit board for packaging, there is a case where a flexible wiring circuit board having a contact layer called an interposer is interposed therebetween.

The flexible printed circuit board such as the interposer described above has poor operability in a manufacturing step such as wafer mounting due to its soft nature. Therefore, the following method is used: First, a flexible printed circuit board is formed on a metal supporting substrate as the wiring circuit substrate having appropriate rigidity, and wafer mounting is performed in a state of operability in the improving step, and after mounting a rigid body or a wafer Remove the metal support substrate.

Previously, the processing of forming a flexible printed circuit board on a metal supporting substrate and removing the metal supporting substrate after the wafer mounting was performed as described above. Here, the metal supporting substrate and the printed circuit board are integrally formed as an inseparable layer, and etching is performed when the metal supporting board is removed after the wafer is mounted. However, there is a step of removing the metal supporting substrate by etching. Therefore, there is a problem in that the manufacturing process is complicated and the manufacturing cost is increased because the resist is applied and removed.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-510518

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-531385

Therefore, a method of peeling the metal supporting substrate and the printed circuit board by the filling layer and the edge bonding as disclosed in Patent Document 1, and performing the peeling after the wafer is mounted is considered. In addition, a method of peeling the metal supporting substrate and the printed circuit board by the bonding composition layer disclosed in Patent Document 2, and performing the peeling after the wafer is mounted is also considered.

The filling layer described in Patent Document 1 or the bonding composition layer described in Patent Document 2 is formed by applying a solution-like material to a substrate on one side by spin coating or the like. However, if a layer having a thickness of about 100 μm which is required to be subsequently formed is formed by coating, there is a problem that the coated surface is generally rough, and the desired adhesive force may not be obtained. Moreover, especially in the case of coating by spin coating, most of the material is scattered outside the substrate, so there is a problem of material waste. Further, since the material has a higher viscosity for subsequent use, there is a problem in that labor is required to remove the dirt of the spin coater caused by the scattered material.

The inventors of the present invention have found that the above problems can be solved by adopting the following configuration, and the present invention has been achieved.

That is, the method of manufacturing a semiconductor device according to the first aspect of the present invention is characterized in that the method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring includes a step of preparing a bonding sheet having the first sheet The adhesive layer and the adhesion force after being attached to the susceptor are lower than the second layer of the first adhesive layer, and at least the peripheral portion of the adhesive sheet is formed of the first adhesive layer; a step of forming a wiring on the substrate after bonding to the susceptor; a step of mounting a workpiece on the wiring; and separating the workpiece with the wiring from the susceptor after the mounting The steps.

According to the above configuration, the adhesive sheet is bonded to the susceptor, and the wiring is formed on the adhesive sheet after being bonded to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the above-mentioned succeeding sheet is in the form of a sheet, it can be easily used when it is bonded only to the susceptor. Further, since the sheet-shaped succeeding film is used, there are few cases where the material is wasted as a spin coating. Further, since the sheet is separately prepared, it is possible to prepare a sheet having a uniform surface. Thus, according to the above configuration, it is formed on the pedestal After the workpiece is mounted on the wiring, the semiconductor device is manufactured by separating the workpiece with the wiring from the susceptor and manufacturing the semiconductor device. Therefore, the semiconductor device can be easily manufactured without wasting material.

Further, according to the above configuration, the adhesive sheet having the first adhesive layer and the adhesion strength after being attached to the susceptor lower than the second layer of the first adhesive layer is used as the adhesive sheet, and at least The peripheral portion of the above-mentioned succeeding sheet is formed of the above-described first adhesive layer. Then, the first adhesive layer having a higher force than the second layer is present in the peripheral portion, so that the portion can be firmly bonded to the susceptor and the wiring. Moreover, since not only the first adhesive layer but also the second layer having a lower adhesive force than the first adhesive layer is provided, if the adhesion of the first adhesive layer is lowered in the step of separating, the external force can be used. The susceptor and the workpiece with the wiring are easily separated up and down. As a method of lowering the adhesion force of the first adhesive layer, a method of reducing the adhesion force by dissolving the first adhesive layer in a solvent is used, and the slit is physically cut by a cutter or a laser equal to the first adhesive layer. A method of lowering the adhesion force; a method of forming a first adhesive layer by using a material whose heating force is lowered by heating, and a method of reducing the adhesion force by heating, or the like. In the above configuration, since the first adhesive layer is formed on the peripheral portion of the adhesive sheet, in the step of separating, the first adhesive layer is easily dissolved in a solvent, or the slit is physically cut by a cutter or a laser. The adhesion of the first adhesive layer is lowered. Further, in the first aspect of the invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer after being attached to the susceptor means that the temperature is 23 ± 2 ° C and the peeling speed is 300 mm / min. The peeling force is 90° for the wafer. For example, when the adhesion of the first adhesive layer or the second layer is changed after being attached to the susceptor by yttrium imidization or thermal hardening after being attached to the susceptor, It refers to the first adhesive layer or the second layer of the first adhesive layer or the second layer after being attached to the susceptor on the susceptor (for yttrium imidation or thermal curing). Further, in the first aspect of the invention, the workpiece includes a wafer in which no circuit is formed, a wafer in which a circuit is formed, a wafer in which a circuit is not formed, and a semiconductor wafer (a monolith in which a circuit is formed) Wafer) Wherein, the workpiece of the first invention is preferably a monolithic crystal in which no circuit is formed. Round, or semiconductor wafer. Furthermore, monolithic wafers and semiconductor wafers that are not formed with circuitry are also referred to as wafer-like workpieces.

In the above configuration, the adhesive sheet is formed by laminating the first adhesive layer and the second layer, and is formed on the pedestal by the center portion of the peripheral portion. The surface on the side where the two layers are exposed is a step of bonding the above-mentioned adhesive sheet to the susceptor as a bonding surface. According to the above configuration, the wiring formed on the adhesive sheet can be more firmly fixed by the surface on which only the first adhesive layer is exposed. Further, the central portion is formed by laminating the first adhesive layer and the second layer. Therefore, the adhesion force at the central portion formed by laminating the first adhesive layer and the second layer is relatively lower than that of the peripheral portion formed only by the first adhesive layer. Therefore, if at least the adhesion of the peripheral portion is lowered, the susceptor and the workpiece with the wiring can be easily separated up and down by an external force. Further, since the second layer is also in contact with the susceptor, the step of separating is likely to be peeled off from the susceptor. Therefore, the susceptor is easily recovered.

In the above configuration, it is preferable that the above-mentioned succeeding sheet has a central portion which is further inside than the peripheral portion by the second layer. According to the above configuration, since the center portion is formed by the second layer, in the step of separating, if the adhesion force of the first adhesive layer is lowered, the susceptor and the workpiece with the wiring can be easily attached by an external force. Separate under. Further, since the center portion is formed by the second layer, and the second layer is also in contact with the susceptor, the step of separating is likely to be detached from the susceptor. Therefore, the susceptor is easily recovered.

In the above configuration, the adhesive sheet is formed on the inner side of the peripheral portion by the laminate of the first adhesive layer and the second layer, and the step of bonding to the susceptor is preferably only the above The surface on the side where the first adhesive layer is exposed is a step of bonding the above-mentioned adhesive sheet to the susceptor as a bonding surface. According to the above configuration, the surface on which only the first adhesive layer is exposed can be more firmly fixed to the susceptor. The central portion is formed by laminating the first adhesive layer and the second layer. Therefore, the central portion formed by laminating the first adhesive layer and the second layer is formed in comparison with the peripheral portion formed only by the first adhesive layer. The force is relatively low. Therefore, if at least the adhesion of the peripheral portion is lowered, the susceptor and the workpiece with the wiring can be easily separated up and down by an external force.

Moreover, in order to solve the above problems, the adhesive sheet according to the first aspect of the invention is characterized in that it is used in the method of manufacturing a semiconductor device described above.

Further, a method of manufacturing a semiconductor device according to a 2-1 aspect of the invention is characterized in that the method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring includes: a step of preparing a bonding sheet having The first adhesive layer and the adhesion force after being attached to the susceptor are lower than the second layer of the first adhesive layer, and the peripheral portion of the adhesive sheet is formed of the first adhesive layer, which is higher than the peripheral portion. a central portion of the inner side is formed by the second layer; a step of bonding the adhesive sheet to the susceptor; a step of forming a wiring on the adhesive sheet; a step of mounting a workpiece on the wiring; and after the mounting, The workpiece is cut out from the workpiece until the center portion of the succeeding sheet is reached, thereby separating the workpiece with the wiring from the susceptor.

According to the above configuration, the adhesive sheet is bonded to the susceptor, and the wiring is formed on the adhesive sheet after being bonded to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the above-mentioned succeeding sheet is in the form of a sheet, it can be easily used when it is bonded only to the susceptor. Further, since the sheet-shaped succeeding film is used, there are few cases where the material is wasted as a spin coating. Further, since the sheet is separately prepared, it is possible to prepare a sheet having a uniform surface. According to the above configuration, after the workpiece is mounted on the wiring formed on the susceptor, and the workpiece with the wiring is separated from the susceptor to manufacture the semiconductor device, the sheet-like slab is used, so that the material can be dispensed with The semiconductor device is simply fabricated.

Further, since the peripheral portion of the above-mentioned succeeding film is formed of the first adhesive layer, and the central portion of the inner side of the peripheral portion is formed of the second layer, if the workpiece is attached to the wiring, the work is performed from the above. When the slit is cut out from the sheet side until reaching the center portion of the succeeding sheet, the susceptor and the workpiece with the wiring are opposed to each other only via the second layer. As a result, in the step of separating, the susceptor and the workpiece with the wiring can be easily separated up and down by an external force. Further, in the second aspect of the invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer after being attached to the susceptor means that the temperature is 23±2° C. and the peeling speed is 300 mm/min. The peeling force is 90° for the wafer. For example, when the adhesion of the first adhesive layer or the second layer is changed after being attached to the susceptor by yttrium imidization or thermal hardening after being attached to the susceptor, It refers to the first adhesive layer or the second layer of the first adhesive layer or the second layer after being attached to the susceptor on the susceptor (for yttrium imidation or thermal curing). Further, in the second aspect of the invention, the workpiece includes a wafer in which no circuit is formed, a wafer in which a circuit is formed, a wafer in which a circuit is not formed, and a semiconductor wafer (a monolith in which a circuit is formed) Wafer) Among them, the workpiece of the second invention is preferably a singulated wafer or a semiconductor wafer in which no circuit is formed. Furthermore, monolithic wafers and semiconductor wafers that are not formed with circuitry are also referred to as wafer-like workpieces.

Further, the method of manufacturing a semiconductor device according to the second aspect of the present invention is characterized in that it is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and includes a step of preparing a bonding sheet having The first adhesive layer and the adhesion force after being attached to the susceptor are lower than the second layer of the first adhesive layer, and the peripheral portion of the adhesive sheet is formed of the first adhesive layer, which is higher than the peripheral portion. The central portion of the inner side is formed of a laminate of the first adhesive layer and the second layer, and the surface of the side on which the first adhesive layer is exposed is used as a bonding surface, and the adhesive sheet is bonded to the susceptor. a step of forming a wiring on the bonding sheet; a step of mounting a workpiece on the wiring; and, after the mounting, cutting the slit from the workpiece side to the first adhesive layer in the center portion Thereby using the wiring attached workpiece from the above The step of separating the susceptor.

According to the above configuration, the adhesive sheet is bonded to the susceptor, and the wiring is formed on the adhesive sheet after being bonded to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the above-mentioned succeeding sheet is in the form of a sheet, it can be easily used when it is bonded only to the susceptor. Further, since the sheet-shaped succeeding film is used, there are few cases where the material is wasted as a spin coating. Further, since the sheet is separately prepared, it is possible to prepare a sheet having a uniform surface. According to the above configuration, after the workpiece is mounted on the wiring formed on the susceptor, and the workpiece with the wiring is separated from the susceptor to manufacture the semiconductor device, the sheet-like slab is used, so that the material can be dispensed with The semiconductor device is simply fabricated.

Further, the peripheral portion of the adhesive sheet is formed of the first adhesive layer, and the central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer, so that after the workpiece is mounted on the wiring When the slit is cut out from the workpiece side until reaching the first adhesive layer at the center portion, the susceptor and the workpiece with the wiring pass only through the laminated portion of the first adhesive layer and the second layer. And relative. At this time, the first adhesive layer is bonded to the susceptor, and the second layer is brought into contact with the workpiece to which the wiring is attached. As a result, in the step of separating, the interface between the second layer and the wiring can be easily peeled off by an external force. Therefore, the susceptor and the workpiece with the wiring can be easily separated up and down.

Further, a method of manufacturing a semiconductor device according to a 2-3rd aspect of the present invention is characterized in that it is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and includes a step of preparing a bonding sheet having The first adhesive layer and the adhesion force after being attached to the susceptor are lower than the second layer of the first adhesive layer, and the peripheral portion of the adhesive sheet is formed of the first adhesive layer, which is higher than the peripheral portion. The central portion of the inner side is formed of a laminate of the first adhesive layer and the second layer, and the surface of the opposite side of the surface on which the first adhesive layer is exposed is used as a bonding surface to bond the adhesive sheet. a step on the pedestal; a step of forming a wiring on the bonding sheet; a step of mounting a workpiece on the wiring; and after the mounting, cutting the workpiece from the workpiece side to the second layer until the second layer is reached The step of separating from the above susceptor.

According to the above configuration, the adhesive sheet is bonded to the susceptor, and the wiring is formed on the adhesive sheet after being bonded to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the above-mentioned succeeding sheet is in the form of a sheet, it can be easily used when it is bonded only to the susceptor. Further, since the sheet-shaped succeeding film is used, there are few cases where the material is wasted as a spin coating. Further, since the sheet is separately prepared, it is possible to prepare a sheet having a uniform surface. According to the above configuration, after the workpiece is mounted on the wiring formed on the susceptor, and the workpiece with the wiring is separated from the susceptor to manufacture the semiconductor device, the sheet-like slab is used, so that the material can be dispensed with The semiconductor device is simply fabricated.

Further, the peripheral portion of the adhesive sheet is formed of the first adhesive layer, and the central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer, so that after the workpiece is mounted on the wiring When the slit is cut out from the workpiece side until reaching the second layer, the susceptor and the workpiece with the wiring are opposed to each other only via the laminated portion of the first subsequent layer and the second layer. Therefore, in the step of separating, the interface between the first adhesive layer and the second layer or the interface between the second layer and the susceptor can be easily peeled off by an external force. Thereafter, the first adhesive layer is peeled off from the wiring. Thereby, the susceptor and the workpiece with the wiring can be easily separated up and down.

Moreover, in order to solve the above problems, the second sheet of the present invention is characterized by being used in the method of manufacturing a semiconductor device described above.

Further, a method of manufacturing a semiconductor device according to a third aspect of the present invention is characterized in that the method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring includes: a step of preparing a film having a first adhesive layer and attached to the substrate a bonding force after the seat is lower than the second layer of the first adhesive layer; a step of bonding the bonding sheet to the susceptor; and a step of forming a wiring on the bonding sheet after being bonded to the susceptor; a step of mounting a workpiece on the wiring; and a step of separating the workpiece with the wiring from the susceptor after the mounting.

According to the above configuration, the adhesive sheet is bonded to the susceptor, and the wiring is formed on the adhesive sheet after being bonded to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the above-mentioned succeeding sheet is in the form of a sheet, it can be easily used when it is bonded only to the susceptor. Further, since the sheet-shaped succeeding film is used, there are few cases where the material is wasted as a spin coating. Further, since the sheet is separately prepared, it is possible to prepare a sheet having a uniform surface. According to the above configuration, after the workpiece is mounted on the wiring formed on the susceptor, and the workpiece with the wiring is separated from the susceptor to manufacture the semiconductor device, the sheet-like slab is used, so that the material can be dispensed with The semiconductor device is simply fabricated.

Further, according to the above configuration, a back sheet in which a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer are laminated is used. Since the first adhesive layer is present, wiring or the like can be fixed to the susceptor in advance in the step of forming the wiring or the step of mounting the workpiece. Further, not only the first adhesive layer but also the second layer having a lower adhesive force than the first adhesive layer, the susceptor and the wiring-attached workpiece can be easily moved up and down by an external force in the separating step. Separation. Further, in the step of separating, the separation may be performed after lowering the adhesion of the first adhesive layer. As a method of lowering the adhesion force of the first adhesive layer, a method of reducing the adhesion force by dissolving the first adhesive layer in a solvent is used, and the slit is physically cut by a cutter or a laser equal to the first adhesive layer. A method of lowering the adhesion force; a method of forming a first adhesive layer by using a material whose heating force is lowered by heating, and a method of reducing the adhesion force by heating, or the like. Further, in the third aspect of the invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer after being attached to the susceptor means a temperature of 23 ± 2 ° C and a peeling speed. 90° tear-off peel force for tantalum wafers under conditions of 300 mm/min. For example, when the adhesion of the first adhesive layer or the second layer is changed after being attached to the susceptor by yttrium imidization or thermal hardening after being attached to the susceptor, It refers to the first adhesive layer or the second layer of the first adhesive layer or the second layer after being attached to the susceptor on the susceptor (for yttrium imidation or thermal curing). Further, in the third aspect of the invention, the workpiece includes a wafer in which no circuit is formed, a wafer on which a circuit is formed, a wafer in which a circuit is not formed, and a semiconductor wafer (a single chip in which a circuit is formed) Wafer) Among them, the workpiece of the third invention is preferably a singulated wafer or a semiconductor wafer in which no circuit is formed. Furthermore, monolithic wafers and semiconductor wafers that are not formed with circuitry are also referred to as wafer-like workpieces.

In the above configuration, the step of bonding is preferably a step of bonding the second layer of the adhesive sheet to the susceptor as a bonding surface. When the bonding step is a step of bonding the second layer of the adhesive sheet to the susceptor as a bonding surface, wiring is formed on the first adhesive layer. Therefore, in the step of forming the wiring or the step of mounting the workpiece, the wiring or the like can be fixed to the susceptor more firmly in advance.

In the above configuration, the step of bonding is preferably a step of bonding the first adhesive layer of the adhesive sheet to the susceptor as a bonding surface. When the bonding step is a step of bonding the first adhesive layer of the adhesive sheet to the susceptor as a bonding surface, the first adhesive layer is firmly attached to the susceptor. Therefore, in the step of forming the wiring or the step of mounting the workpiece, the wiring or the like can be fixed to the susceptor more firmly in advance.

Moreover, in order to solve the above problems, the adhesive sheet according to the third aspect of the invention is characterized in that it is used in the method of manufacturing a semiconductor device described above.

Moreover, the method of manufacturing a semiconductor device according to the fourth aspect of the present invention is characterized in that the method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring includes: disposing a sheet for temporary fixing on a susceptor, and Forming an adhesion force between the temporary fixing sheet and the inclined portion of the end portion of the base higher than the temporary fixing sheet a step of fixing the temporary fixing sheet to the susceptor, a step of forming a wiring on the temporary fixing sheet fixed to the susceptor, a step of mounting a workpiece on the wiring, and the above After the mounting, the above-mentioned adhesive layer is separated from the temporary fixing sheet, whereby the workpiece with the wiring is separated from the susceptor.

According to the above configuration, the temporary fixing sheet is fixed to the susceptor, and wiring is formed on the temporary fixing sheet after being fixed to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the temporary fixing sheet has a sheet shape, it can be easily used when it is fixed only to the susceptor. Further, since it is a sheet-like temporary fixing sheet, there are few cases where materials are wasted as a spin coating. Further, since the sheet for temporary fixing is separately prepared, it is possible to prepare a sheet having a uniform surface. According to the above configuration, after the workpiece is mounted on the wiring formed on the susceptor, and the workpiece with the wiring is separated from the susceptor to manufacture the semiconductor device, the sheet-shaped temporary fixing sheet is used, so that no waste can be avoided. The semiconductor device is simply fabricated in the case of a material.

Further, according to the above configuration, the temporary fixing sheet is disposed on the susceptor, and an adhesive layer having a higher adhesion force than the temporary fixing sheet is formed between the temporary fixing sheet and the inclined portion of the pedestal end portion. The above-mentioned temporary fixing sheet is fixed to the susceptor. The fixing of the temporary fixing sheet to the susceptor is mainly performed by the adhesive layer formed on the inclined portion of the end portion of the susceptor. Therefore, in the separating step, the adhesive layer is applied from the temporary fixing sheet. When separated, the susceptor and the workpiece with the wiring can be easily separated up and down by an external force. The method of separating the adhesive layer from the temporary fixing sheet includes a method of dissolving the above-mentioned adhesive layer by a solvent to separate the adhesive layer from the temporary fixing sheet; and using a cutter or a laser equal to the above-described temporary fixing a method of physically cutting a slit from a sheet to separate the adhesive layer from the sheet for temporary fixing; The material which is lowered by heating forms the above-mentioned adhesive layer, and the method of separating the above-mentioned adhesive layer from the temporary fixing sheet by heating and lowering the adhesive force is used. In the above configuration, since the adhesive layer is formed on the inclined portion of the end portion of the base, in the step of separating, the adhesive layer is easily dissolved by a solvent, or the cutting machine or the laser is equal to the temporary fixing sheet. The slit is physically cut to reduce the adhesion of the above adhesive layer. Further, in the fourth aspect of the invention, the adhesion force of the adhesive layer and the adhesion force of the temporary fixing sheet means 90° for the silicon wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. Peel off the peeling force. For example, when the adhesion of the sheet for temporary fixing or the adhesive layer is changed before being attached to the susceptor by yttrium imidization or thermal hardening after being attached to the susceptor, It refers to the 90° peeling peeling force of the temporary fixing sheet or the adhesive layer in the state after being attached to the susceptor (for example, after ytidine or after heat curing). Further, in the fourth invention, the workpiece includes a wafer in which no circuit is formed, a wafer in which a circuit is formed, a wafer in which a circuit is not formed, and a semiconductor wafer (a single chip in which a circuit is formed) Wafer) Among them, the workpiece of the fourth invention is preferably a singulated wafer or a semiconductor wafer in which no circuit is formed. Furthermore, monolithic wafers and semiconductor wafers that are not formed with circuitry are also referred to as wafer-like workpieces.

In the above configuration, the step of separating is preferably a step of separating the workpiece having the wiring from the susceptor by cutting the slit from the temporary fixing sheet after the attachment. This is because the slit can be cut out from the temporary fixing sheet, so that the workpiece with the wiring can be easily separated from the susceptor.

In the above configuration, the step of separating is preferably a step of separating the workpiece having the wiring from the susceptor by cutting the slit in a state in which the slit is not cut out on the wiring after the mounting. When the slit is cut out without cutting a slit in the wiring, the device (a workpiece with wiring) can be obtained in an area substantially the same as the area of the pedestal in plan view.

Further, a method of manufacturing a semiconductor device according to a fifth aspect of the present invention is characterized in that A method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and comprising: preparing a bonding sheet having a first adhesive layer and a structure having a plurality of through holes and/or a non-woven structure; The second layer of the skeleton, and the adhesion force of the second layer after being attached to the susceptor is lower than the adhesion of the first adhesive layer; the step of bonding the adhesive sheet to the susceptor; a step of forming a wiring on the bonding sheet after the pedestal; a step of mounting a workpiece on the wiring; and a step of separating the workpiece with the wiring from the susceptor after the mounting.

According to the above configuration, the adhesive sheet is bonded to the susceptor, and the wiring is formed on the adhesive sheet after being bonded to the susceptor. Thereafter, the workpiece is mounted on the wiring, and after the mounting, the workpiece with the wiring is separated from the susceptor. Since the above-mentioned succeeding sheet is in the form of a sheet, it can be easily used when it is bonded only to the susceptor. Further, since the sheet-shaped succeeding film is used, there are few cases where the material is wasted as a spin coating. Further, since the sheet is separately prepared, it is possible to prepare a sheet having a uniform surface. According to the above configuration, after the workpiece is mounted on the wiring formed on the susceptor, and the workpiece with the wiring is separated from the susceptor to manufacture the semiconductor device, the sheet-like slab is used, so that the material can be dispensed with The semiconductor device is simply fabricated.

Further, according to the above configuration, the second layer is a layer having a structure having a plurality of through holes and/or a non-woven structure as a skeleton, and can be formed, for example, by a mesh such as a gold mesh or a non-woven fabric. Therefore, when the adhesive sheet is prepared, the adhesive composition of the first adhesive layer is prepared as the adhesive material, and it is not necessary to prepare two kinds of adhesives for the filling layer and the edge bonding as in Patent Document 1.

Further, according to the above configuration, a back sheet having a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer is used. Since the first adhesive layer is present, wiring or the like can be fixed to the susceptor in advance in the step of forming the wiring or the step of mounting the workpiece. Moreover, it has not only the first adhesive layer but also the second adhesive layer lower than the first adhesive layer. Since the layer is separated, the susceptor and the workpiece with the wiring can be easily separated up and down by an external force. Further, in the step of separating, the separation may be performed after lowering the adhesion of the first adhesive layer. As a method of lowering the adhesion force of the first adhesive layer, a method of reducing the adhesion force by dissolving the first adhesive layer in a solvent is used, and the slit is physically cut by a cutter or a laser equal to the first adhesive layer. A method of lowering the adhesion force; a method of forming a first adhesive layer by using a material whose heating force is lowered by heating, and a method of reducing the adhesion force by heating, or the like. Further, in the fifth invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer after being attached to the susceptor means that the temperature is 23 ± 2 ° C and the peeling speed is 300 mm / min. The peeling force is 90° for the wafer. For example, when the adhesion of the first adhesive layer or the second layer is changed after being attached to the susceptor by yttrium imidization or thermal hardening after being attached to the susceptor, It refers to the first adhesive layer or the second layer of the first adhesive layer or the second layer after being attached to the susceptor on the susceptor (for yttrium imidation or thermal curing). Further, in the fifth invention, the workpiece includes a wafer in which no circuit is formed, a wafer on which a circuit is formed, a wafer in which a circuit is not formed, and a semiconductor wafer (a single chip in which a circuit is formed) Wafer) Among them, the workpiece of the fifth invention is preferably a singulated wafer or a semiconductor wafer in which no circuit is formed. Furthermore, monolithic wafers and semiconductor wafers that are not formed with circuitry are also referred to as wafer-like workpieces.

In the above configuration, it is preferable that a plurality of holes of the through hole and the nonwoven fabric structure are filled by the adhesive composition. In this case, the area of contact of the adhesive composition with the wiring or the susceptor can be controlled according to the aperture ratio of the structure having the through hole or the density of the non-woven structure, and the second layer of the low adhesion force can be easily formed. .

In the above configuration, it is preferable that at least the peripheral portion is formed of the first adhesive layer. Since the peripheral portion of the above-mentioned adhesive sheet is formed of the first adhesive layer, the portion can be favorably fixed.

In the above configuration, the end piece is preferably a central portion that is further inside than the peripheral portion. It is formed of a laminate of the first adhesive layer and the second layer. According to the above configuration, the wiring or the susceptor can be firmly fixed to the surface including only the first adhesive layer. The wiring or the pedestal can be favorably fixed on the surface having the first adhesive layer and the second layer. Further, since the first adhesive layer is formed on the peripheral portion in the peripheral portion, the first adhesive layer can be easily cut or the adhesion of the first adhesive layer can be lowered, and the separation can be easily performed.

In the above configuration, it is preferable that the end piece is formed so that the center portion of the inner side is formed by the second layer. According to the above configuration, the wiring or the pedestal can be satisfactorily fixed on the surface having the first adhesive layer and the second layer. Further, since the first adhesive layer is formed on the peripheral portion in the peripheral portion, the first adhesive layer can be easily cut or the adhesion of the first adhesive layer can be lowered, and the separation can be easily performed.

Moreover, in order to solve the above problems, the adhesive sheet according to the fifth aspect of the invention is characterized in that it is used in the method of manufacturing a semiconductor device described above.

According to the present invention, the semiconductor device can be easily manufactured by mounting the workpiece on the wiring formed on the susceptor and then separating the workpiece with the wiring from the susceptor to manufacture the semiconductor device.

1‧‧‧Base

2‧‧‧Wiring layer

3‧‧‧Semiconductor wafer

5‧‧‧Next film

6‧‧‧Next film

7‧‧‧Next film

11‧‧‧ sloping part

14‧‧‧Incision

20a‧‧‧Basic insulation

20b‧‧‧ adhesive layer

21‧‧‧Connecting conductor

22‧‧‧External conductors

23‧‧‧Conductor layer

23a‧‧‧film (metal film)

24‧‧‧Guide

25‧‧‧Guide

26‧‧‧Wiring

31‧‧‧ electrodes

32‧‧‧Resin

50‧‧‧1st adhesive layer

51‧‧‧2nd floor

53‧‧‧Central Department

54‧‧‧ peripherals

55‧‧‧Incision

56‧‧‧through holes

57‧‧‧ Construct

60‧‧‧1st adhesive layer

61‧‧‧2nd floor

63‧‧‧Central Department

64‧‧‧The surrounding department

65‧‧‧ incision

66‧‧‧through holes

70‧‧‧1st adhesive layer

71‧‧‧2nd floor

73‧‧‧Central Department

74‧‧‧ peripherals

75‧‧‧Incision

105‧‧‧Next film

105a‧‧‧ recess

150‧‧‧1st adhesive layer

151‧‧‧2nd floor

165‧‧‧ incision

205‧‧‧Next film

250‧‧‧1st adhesive layer

251‧‧‧2nd floor

211‧‧‧Metal film

H1‧‧‧ openings

R1‧‧‧resisting agent

R2‧‧‧resisting agent

D1‧‧‧ The distance between the end of the susceptor 1 and the end of the temporary fixing sheet 5 in the lateral direction (horizontal direction of the surface of the temporary fixing sheet)

D2‧‧‧The radius of the base 1

Fig. 1 is a schematic cross-sectional view showing a sheet of an embodiment of the first invention.

Fig. 2 is a schematic cross-sectional view showing a sheet of another embodiment of the first invention.

Fig. 3 is a schematic cross-sectional view showing a film of another embodiment of the first invention.

4 is a schematic cross-sectional view for explaining an outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 5 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 6 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 7 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 8 is a cross-sectional schematic view for explaining an outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 9 is a cross-sectional schematic view for explaining an outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 10 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 11 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 12 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 13 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 14 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 15 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 16 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 17 is a schematic cross-sectional view showing an example of a method of manufacturing the semiconductor device shown in Fig. 9.

Fig. 18 is a cross-sectional schematic view showing a sheet of the embodiment of the 2-1th invention.

Fig. 19 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Figure 20 is a diagram showing the manufacture of a semiconductor device according to an embodiment of the 2-1 invention. A schematic sectional view of the method will be described.

Fig. 21 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 22 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 23 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 24 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 25 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 26 is a cross-sectional schematic view showing a sheet of the second embodiment of the present invention.

Fig. 27 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

Figure 28 is a cross-sectional schematic view showing a sheet of an embodiment of the 2-3th invention.

Fig. 29 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Figure 30 is a cross-sectional schematic view showing a sheet of an embodiment of the third invention.

Figure 31 is a cross-sectional schematic view showing a sheet of another embodiment of the third invention.

Fig. 32 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the third invention.

Fig. 33 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the third invention.

Fig. 34 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the third invention.

35 is a view showing a method of manufacturing a semiconductor device according to an embodiment of the third invention; A schematic cross-sectional view of the description.

Fig. 36 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the third invention.

37 is a schematic cross-sectional view for explaining an outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

38 is a schematic cross-sectional view showing a state in which a wiring layer is formed on a bonding sheet of another embodiment and a semiconductor wafer is mounted.

Fig. 39 is a schematic cross-sectional view showing a state in which a wiring layer is formed on a bonding sheet of another embodiment and a semiconductor wafer is mounted.

40 (a) and (b) are schematic cross-sectional views for explaining the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

41 is a schematic cross-sectional view for explaining an outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 42 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 43 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 44 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 45 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 46 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 47 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to another embodiment.

Fig. 48 is a cross-sectional schematic view showing a sheet of the first embodiment of the fifth invention.

Figure 49 is a plan view of the adhesive sheet shown in Figure 48.

Fig. 50 is a plan view showing an example of a structure having a plurality of through holes.

Figure 51 is a cross-sectional schematic view showing a sheet of a second embodiment of the fifth invention.

Figure 52 is a plan view of the film shown in Figure 51.

Figure 53 is a cross-sectional schematic view showing a sheet of a third embodiment of the fifth invention.

Fig. 54 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the fifth invention.

Fig. 55 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the fifth invention.

Fig. 56 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the fifth invention.

Fig. 57 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the fifth invention.

Fig. 58 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the fifth invention.

Fig. 59 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the fifth invention.

<First invention>

A method of manufacturing a semiconductor device according to a first aspect of the present invention is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, comprising at least a step of preparing a bonding sheet having a first adhesive layer and attaching The adhesive force after the susceptor is lower than the second layer of the first adhesive layer, and at least the peripheral portion of the adhesive sheet is formed of the first adhesive layer; and the adhesive sheet is attached to the pedestal a step of forming a wiring on the bonding sheet after bonding to the susceptor; a step of mounting a workpiece on the wiring; and a step of separating the workpiece with the wiring from the susceptor after the mounting.

Hereinafter, each step of the embodiment of the first invention will be described with reference to the drawings. In addition, the "upper surface", "lower surface" and the like used in the first invention are used to describe the positional relationship of the layers, and the actual posture of the adhesive sheet or the semiconductor device is not limited. In the following embodiments, the case where the workpiece of the first invention is a semiconductor wafer will be described. However, the present invention is not limited to this example, and may be a wafer in which no circuit is formed, and may be a wafer on which a circuit is formed. It can also be a monolithic wafer in which no circuit is formed.

[Steps to prepare the next film]

First, a bonding sheet having a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer is prepared, and at least a peripheral portion of the adhesive sheet is formed of the first adhesive layer.

Here, the succeeding film of this embodiment will be described. Fig. 1 is a schematic cross-sectional view showing a sheet of an embodiment of the first invention. As shown in FIG. 1, the succeeding sheet 5 peripheral portion 54 is formed of the first adhesive layer 50, and the central portion 53 which is further inside than the peripheral portion 54 is formed of a laminate of the first adhesive layer 50 and the second layer 51. That is, the succeeding sheet 5 has the second layer 51 and the first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51. The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Further, in the step of bonding the bonding sheet 5 to the susceptor, the surface on the side where the second layer 51 is exposed is bonded to the susceptor as a bonding surface.

Then, since the sheet 5 is present in the peripheral portion of the first adhesive layer 50 having a higher adhesion force than the second layer 51, the portion can be firmly bonded to the susceptor and the wiring. Moreover, not only the first adhesive layer 50 but also the second layer having a lower adhesive force than the first adhesive layer can be used. Therefore, when the adhesion of the first adhesive layer 50 is lowered in the step of separation described later, The susceptor and the semiconductor wafer with wiring are easily separated up and down by an external force.

Moreover, the succeeding sheet 5 can securely fix the wiring formed on the adhesive sheet 50 by the surface on which only the first adhesive layer 50 is exposed. Further, the central portion 53 is composed of the first adhesive layer 50 and the second layer Formed by 51 layers. Therefore, the central portion 53 formed by laminating the first adhesive layer 50 and the second layer 51 has a lower adhesive force than the peripheral portion 54 formed only by the first adhesive layer 50. Therefore, if at least the adhesion of the peripheral portion 54 is lowered, the susceptor and the semiconductor wafer with the wiring attached can be easily separated up and down by an external force. Further, since the second layer 51 is also in contact with the susceptor, the step 5 is easily peeled off from the susceptor after the step of separating. Therefore, the susceptor is easily recovered. Further, since the first adhesive layer 50 is formed on the peripheral portion 54 of the adhesive sheet 5, the first adhesive layer 50 is dissolved in a solvent or physically cut by a cutter or a laser in a step of separation described later. The slit is formed, and the adhesion of the first adhesive layer 50 is easily lowered.

In the present embodiment, the adhesion force of the second layer 51 after being attached to the susceptor is not particularly limited as long as it is lower than the adhesion force of the first adhesive layer 50 after being attached to the susceptor, and the temperature is 23± The 90° peeling peeling force for the tantalum wafer under conditions of 2° C. and a peeling speed of 300 mm/min is preferably 0.30 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 51 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 51 is 0.30 N/20 mm or less, the second layer 51 can be easily peeled off from the susceptor. On the other hand, the lower the above-described adhesion force of the second layer 51, the easier it is to peel off from the susceptor.

Moreover, the adhesion force of the first adhesive layer 50 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 51 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 50 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 50 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 5 can be more firmly fixed.

The thickness of the sheet 5 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the adhesive sheet 5 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, if the thickness of the adhesive sheet 5 is 100 μm or less, thickness unevenness of the adhesive sheet 5 can be suppressed or prevented or Shrinkage and expansion during heating are advantageous in the step of forming wiring.

The thickness of the central portion 53 of the first adhesive layer 50 is preferably from 0.01 to 99 μm, more preferably from 0.05 to 10 μm.

The thickness of the second layer 51 (thickness of the central portion 53) is preferably from 0.09 to 99.9 μm, more preferably from 0.05 to 15 μm.

The first adhesive layer has a lower modulus of elasticity than the second layer, so that it is easy to cause undulations on the surface when the layer is formed. From the above viewpoints, it is preferred that the first adhesive layer be thin and the second layer be thick. On the other hand, the first adhesive layer has a glass transition temperature higher than that of the second layer, so that the shrinkage is large when the layer is formed. From the above viewpoints, it is preferred that the first adhesive layer be thick and the second layer be thin. Therefore, in the first aspect of the invention, in consideration of both the surface undulation at the time of layer formation and the amount of shrinkage at the time of layer formation, the thickness of the first adhesive layer and the thickness of the second layer are preferably selected within the above numerical range.

The adhesive sheet of the first aspect of the invention is not limited to the adhesive sheet 5 shown in Fig. 1, and may be a continuous sheet as shown in Figs. 2 and 3. Fig. 2 is a schematic cross-sectional view showing a sheet of another embodiment of the first invention. As shown in FIG. 2, the succeeding sheet 6 is formed by the first adhesive layer 60, and the central portion 63 which is further inside than the peripheral portion 64 is formed by the second layer 61. The adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60.

Then, the central portion 63 of the sheet 6 is formed of the second layer 61. Therefore, in the step of separating as will be described later, if the adhesion force of the first adhesive layer 60 existing in the peripheral portion 64 is lowered, the susceptor can be externally biased. The semiconductor wafer with wiring is easily separated up and down.

Further, the central portion 63 is formed by the second layer 61, and the second layer 61 is also in contact with the susceptor. Therefore, after the step of separating, the splicing sheet 6 is easily peeled off from the susceptor. Therefore, the susceptor is easily recovered. Further, since the first adhesive layer 60 is formed on the peripheral portion 64 of the adhesive sheet 6, the first adhesive layer 60 is dissolved in a solvent or physically cut by a cutter or a laser in a step of separation described later. By cutting out the slit, it is easy to lower the adhesion of the first adhesive layer 60.

The adhesion force of the second layer 61 after being attached to the pedestal is as low as that attached to the pedestal The adhesion force of the first first adhesive layer 60 is not particularly limited, and the 90° peeling peeling force for the tantalum wafer is preferably 0.30 N/20 mm under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. Hereinafter, it is more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 61 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 61 is 0.30 N/20 mm or less, the second layer 61 can be easily peeled off from the susceptor. On the other hand, the lower the above-mentioned adhesion force of the second layer 61, the easier it is to peel off from the susceptor.

Moreover, the adhesion force of the first adhesive layer 60 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 61 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 60 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 60 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 6 can be more firmly fixed.

The thickness of the sheet 6 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the adhesive sheet 6 is 0.1 μm or more, the adhesive sheet 6 can be easily formed. On the other hand, when the thickness of the adhesive sheet 6 is 100 μm or less, it is possible to suppress or prevent uneven thickness of the adhesive sheet 6 or shrinkage during heating, and it is advantageous in the step of forming wiring.

Fig. 3 is a schematic cross-sectional view showing a film of another embodiment of the first invention. As shown in FIG. 3, the succeeding sheet 7 is formed by the first adhesive layer 70, and the central portion 73 which is further inside than the peripheral portion 74 is formed of a laminate of the first adhesive layer 70 and the second layer 71. In other words, the succeeding sheet 7 has the second layer 71 and the first adhesive layer 70 which is laminated on the second layer 71 so as to cover the upper surface (the lower surface in FIG. 3) and the side surface of the second layer 71. The adhesion of the second layer 71 is lower than the adhesion of the first adhesive layer 70. Further, the step 7 is attached to the susceptor by the surface on the side where the second layer 71 is exposed in the step of being bonded to the susceptor.

The sheet 7 can be more firmly fixed to the pedestal by using only the exposed surface of the first adhesive layer 70. on. Further, the central portion 73 is formed of a laminate of the first adhesive layer 70 and the second layer 71. Therefore, the central portion 73 formed by laminating the first adhesive layer 70 and the second layer 71 has a lower adhesive force than the peripheral portion 74 formed only by the first adhesive layer 70. Therefore, if at least the adhesion of the peripheral portion 74 is lowered, the susceptor and the wiring-attached semiconductor wafer can be easily separated up and down by an external force. Further, since the first adhesive layer 70 is formed on the peripheral portion 74 of the adhesive sheet 7, the first adhesive layer 70 is dissolved in a solvent or physically cut by a cutter or a laser in a step of separation described later. The slit is formed, and the adhesion of the first adhesive layer 70 is easily lowered.

The adhesion force of the second layer 71 after being attached to the susceptor is not particularly limited as long as it is lower than the adhesion force of the first adhesive layer 70 after being attached to the susceptor, and the temperature is 23±2° C. and the peeling speed is high. The 90° peeling peeling force for the tantalum wafer under conditions of 300 mm/min is preferably 0.30 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 71 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 71 is 0.30 N/20 mm or less, the semiconductor wafer with the wiring can be easily peeled off from the second layer in the separation step.

Moreover, the adhesion force of the first adhesive layer 70 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 71 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 70 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 70 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 7 can be more firmly fixed.

The thickness of the sheet 7 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the succeeding sheet 7 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, when the thickness of the adhesive sheet 7 is 100 μm or less, it is possible to suppress or prevent uneven thickness of the adhesive sheet 7 or shrinkage during heating, and it is advantageous in the step of forming wiring.

The thickness of the central portion 73 of the first adhesive layer 70 is preferably from 0.01 to 99 μm, more preferably from 0.05 to 10 μm.

The thickness of the second layer 71 (thickness of the central portion 73) is preferably from 0.09 to 99.9 μm, more preferably from 0.05 to 15 μm.

[Steps to fit on the base]

In the following description, the case where the back sheet 5 shown in Fig. 1 is used will be described. 4 to 8 are schematic cross-sectional views for explaining the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention. After the step of preparing the succeeding sheet 5, the prepared back sheet 5 is bonded to the susceptor 1 with the lower surface of the succeeding sheet 5 as a bonding surface (see FIG. 4). The bonding method is not particularly limited, and a method using pressure bonding is preferred. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are preferably 20 ° C to 150 ° C, 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, the adhesive sheet 5 is formed such that the first adhesive layer 50 having a higher adhesive force than the second layer 51 is exposed on the lower surface, so that it can be firmly bonded to the susceptor 1.

[Steps for forming wiring]

Then, on the bonding sheet 5, the wiring layer 2 having the connection conductor portion 21 and the wiring 26 that can be connected to the electrode 31 of the semiconductor wafer 3 is formed so that the connection conductor portion 21 is exposed on the upper surface of the wiring layer 2 (refer to Figure 5). The wiring layer 2 has an external connection conductor portion 22 for electrically connecting to the outside on the side of the back sheet 5. In addition, in FIG. 5, the connection conductor portion 21 is exposed in a convex shape on the upper surface of the wiring layer 2. However, in the first aspect of the invention, the connection conductor portion may be exposed on the upper surface of the wiring layer, and the connection conductor may be used. The upper surface of the portion may be the same plane as the upper surface of the wiring layer. Then, in the sheet 5, only the first adhesive layer 50 is exposed on the upper surface, so that the wiring layer formed on the adhesive sheet 50 can be more firmly fixed.

[Steps for installing a semiconductor wafer]

Then, as shown in FIG. 6, the connection conductor portion 21 of the wiring layer 2 is connected to the electrode 31 of the semiconductor wafer 3, and the semiconductor wafer 3 is mounted on the wiring layer 2 (wiring 26). Figure 6 will be The protrusions of the connecting conductor portion 21 and the electrode 31 after the mounting are omitted. Further, although a plurality of semiconductor wafers 3 are mounted on the wiring layer 2 in FIG. 6, the number of semiconductor wafers mounted on the wiring layer is not particularly limited, and may be one.

Then, as shown in FIG. 7, the resin sealing is performed by the resin 32 so as to cover the semiconductor wafer 3. The resin 32 for resin sealing can be suitably used by a conventionally known person or the like, and the resin sealing method can also employ a previously known method.

[Steps to separate from the base]

Then, as shown in FIG. 8, the resin-sealed semiconductor wafer 3 with the wiring layer 2 attached thereto is separated from the susceptor 1. Specifically, the susceptor 1 and the back sheet 5 are peeled off together with the surface of the back sheet 5 on the side opposite to the susceptor 1 as an interface. Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed by the resin is separated from the susceptor 1. As described above, the adhesive sheet 5 has not only the first adhesive layer 50 but also the second layer 51 having a lower adhesive force than the first adhesive layer 50. Therefore, if the adhesion of the first adhesive layer 50 is lowered, the adhesive sheet can be borrowed. The susceptor and the semiconductor wafer with the wiring layer are easily separated up and down by an external force.

Further, the central portion 53 is formed of a laminate of the first adhesive layer 50 and the second layer 51. Therefore, the center portion 53 formed by laminating the first adhesive layer 50 and the second layer 51 has a lower adhesive force than the peripheral portion 54 formed only by the first adhesive layer 50. Therefore, if at least the adhesion of the peripheral portion 54 is lowered, the susceptor and the semiconductor wafer with the wiring layer can be easily separated up and down by an external force. Further, since the first adhesive layer 50 is formed on the peripheral portion 54 of the adhesive sheet 5, the first adhesive layer 50 is dissolved in a solvent or physically cut by a cutter or a laser in a step of separation described later. The slit is formed, and the adhesion of the first adhesive layer 50 is easily lowered. As a method of lowering the adhesion force of the first adhesive layer 50, a method of reducing the adhesion force by dissolving the first adhesive layer 50 in a solvent is used, and the first adhesive layer 50 is physically used by a cutter or a laser. A method of cutting out the slit to reduce the adhesion force; a method of forming the first adhesive layer 50 by a material whose heating force is lowered by heating is used in advance, and a method of reducing the adhesion by heating is used.

Thereafter, trimming is performed as needed, whereby the semiconductor device 4 on which the semiconductor wafer 3 is mounted on the wiring layer 2 is obtained (see FIG. 9). Further, the wiring layer 2 obtained by peeling off the susceptor 1 may be subjected to processing for imparting solder balls.

The outline of the method of manufacturing the semiconductor device of the present embodiment has been described above. Hereinafter, an example of a method of manufacturing a semiconductor device of the present embodiment will be described in detail with reference to FIGS. 10 to 17 . 10 to 17 are cross-sectional schematic views for explaining an example of a method of manufacturing the semiconductor device shown in Fig. 9.

[Preparation of the pedestal with the film]

First, the susceptor 1 is prepared (refer to FIG. 10). The susceptor 1 preferably has a certain strength or more.

The susceptor 1 is not particularly limited, and examples thereof include a compound wafer such as a ruthenium wafer, a SiC wafer, and a GaAs wafer; a glass wafer, SUS, a 6-4 alloy, and a metal foil such as a Ni foil or an Al foil. In the case of a circular shape in a plan view, it is preferably a tantalum wafer or a glass wafer. Further, in the case of a rectangular shape in a plan view, a SUS plate or a glass plate is preferable.

Further, as the susceptor 1, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, or the like can be used. Polyolefins such as homopolypropylene, polybutene, polymethylpentene; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (none , alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyester; polycarbonate Esters, polyimine, polyetheretherketone, polyimine, polyetherimine, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, Glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyn resin, paper, and the like.

The susceptor 1 may be used alone or in combination of two or more. The thickness of the susceptor is not particularly limited, and is, for example, usually about 10 μm to 20 mm.

Then, the adhesive sheet 5 is bonded to the susceptor 1. Next, the sheet 5 has a second layer 51 and a first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51 as described above.

The adhesive composition constituting the first adhesive layer 50 is not particularly limited as long as the adhesion of the first adhesive layer 50 is higher than the adhesive force of the second layer 51. As the adhesive composition constituting the first adhesive layer 50, a polyimine resin having a quinone imine group and having a constituent unit derived from at least a part of a diamine having an ether structure may be used as the above-mentioned polyfluorene. A polyamide resin precursor, a polyphthalic acid resin, a thermoplastic resin, a thermosetting resin, and the like.

The above polyimine resin can be usually obtained by ruthenium imidization (dehydration condensation) of polylysine as its precursor. As a method of ruthenium imidizing polylysine, for example, a conventionally known heating hydrazine imidation method, azeotropic dehydration method, chemical hydrazine imidation method, or the like can be employed. Among them, a heated hydrazine imidation method is preferred. In the case of the heat oxime imidization method, in order to prevent deterioration caused by oxidation of the polyimide resin, it is preferred to carry out heat treatment in a nitrogen atmosphere or an inert atmosphere such as vacuum.

The polylysine may be added to an appropriately selected solvent to form an acid anhydride and a diamine (including both a diamine having an ether structure and a diamine having no ether structure) in a substantially molar ratio. obtain.

The above polyimine resin preferably contains a constituent unit derived from a diamine having an ether structure. The diamine having an ether structure is not particularly limited as long as it has a ether structure and has at least two compounds having an amine structure. Among the above diamines having an ether structure, a diamine having a diol skeleton is preferred. When the polyimine resin contains a constituent unit derived from a diamine having an ether structure, particularly a constituent unit derived from a diamine having a diol skeleton, when the first adhesive layer 50 is heated, the subsequent reduction can be continued. force. In response to this phenomenon, the inventors of the present invention presumed that the ether structure was removed from the resin constituting the first adhesive layer 50 by heating, and the force was lowered by the detachment.

Further, the case where the ether structure or the diol skeleton is detached from the resin constituting the first adhesive layer 50 can be confirmed, for example, by Fourier transform infrared spectroscopy before and after heating at 300 ° C for 30 minutes ( FT-IR (fourier transform infrared spectroscopy) was compared, and the spectrum of 2800~3000 cm ^-1 was reduced before and after heating.

Examples of the diamine having a diol skeleton include a diamine having a polypropylene glycol structure and having one amine group at each terminal, a polyethylene glycol structure, and one amine group at each end. A diamine having an alkylene glycol such as an amine or a diamine having a polyether diol structure and having one amine group at both ends. Further, a diamine having a plurality of such diol structures and having one amine group at each end may also be mentioned.

The molecular weight of the above diamine having an ether structure is preferably in the range of from 100 to 5,000, more preferably from 150 to 4,800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5,000, the first adhesive layer 50 having a high adhesion at a low temperature and exhibiting releasability at a high temperature is easily obtained.

In the formation of the above polyimine resin, in addition to the diamine having an ether structure, a diamine having no ether structure may be used in combination. Examples of the diamine having no ether structure include an aliphatic diamine or an aromatic diamine. By using a diamine having no ether structure in combination, the adhesion to the adherend can be controlled. The blending ratio of the diamine having an ether structure to the diamine having no ether structure is preferably in the range of from 100:0 to 10:90, more preferably from 100:0 to 20:80, more preferably in a molar ratio. It is 99:1~30:70. When the ratio of the diamine having an ether structure to the diamine having no ether structure is in a range of from 100:0 to 10:90 in terms of a molar ratio, the heat releasability at a high temperature is further excellent.

Examples of the above aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, and 1,12-diamine-10- Dioxane, 4,9-dioxa-1,12-diaminododecane, 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldioxine An alkane (α, ω-diaminopropyl tetramethyldioxane) or the like. The molecular weight of the above aliphatic diamine is usually from 50 to 1,000,000, preferably from 100 to 30,000.

Examples of the aromatic diamine include 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, and m-phenylenediamine. , p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3' -diaminodiphenyl sulfide, 4,4'-diaminodiphenylanthracene, 3,3'-diaminodiphenylanthracene, 1,4-bis(4-aminophenoxy) Benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)-2 , 2-dimethylpropane, 4,4'-diaminobenzophenone, and the like. The molecular weight of the above aromatic diamine is usually from 50 to 1,000, preferably from 100 to 500. The molecular weight of the above-mentioned aliphatic diamine and the molecular weight of the above aromatic diamine are values (weight average molecular weight) calculated by GPC (Gel Permeation Chromatography) and calculated in terms of polystyrene.

Examples of the acid anhydride include 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, and 3,3',4. , 4'-benzophenone tetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2, 2-bis(2,3-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA), double (2,3-di) Carboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)ruthenic anhydride, bis(3,4-dicarboxyphenyl)anthracene Di-anhydride, pyromellitic dianhydride, ethylene glycol trimellitic acid dianhydride, and the like. These may be used alone or in combination of two or more.

Examples of the solvent for reacting the above acid anhydride with the above diamine include N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N,N-dimethylformamide, and cyclopentanone. Wait. These may be used singly or in combination of plural kinds. Further, in order to adjust the solubility of the raw material or the resin, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

Examples of the polyoxyxylene resin include a peroxide cross-linking type polyoxynoxy adhesive, an addition reaction type polyoxynoxy adhesive, a dehydrogenation type polyoxynoxy adhesive, and a moisture hardening type polymerization. Oxygen-based adhesives, etc. The above polysiloxane resin may be used singly or in combination of two or more. When the above polyoxyxylene resin is used, the heat resistance is high, and the storage modulus or adhesion at a high temperature can be an appropriate value. In the above polyoxyl resin, less impurities In terms of aspect, an addition reaction type polyoxynoxy adhesive is also preferable.

When the polyfluorene oxide resin is used in the first adhesive layer 50, the first adhesive layer 50 may contain other additives as needed. Examples of such other additives include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropylmethyl group. Diethoxydecane, etc. Examples of the ion scavenger include hydrotalcites, barium hydroxide, and the like. These other additives may be used alone or in combination of two or more.

The composition constituting the second layer 51 is not particularly limited as long as the adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Examples of the material constituting the second layer 51 include inorganic materials such as Cu, Cr, Ni, and Ti.

Further, as the composition constituting the second layer 51, the above-mentioned polyimine resin which has been described as an adhesive composition constituting the first adhesive layer 50 can be used, and can be used as the precursor of the above polyimine resin. As the polyamic acid, the above polyoxyxylene resin may be used, and the above thermoplastic resin and the above thermosetting resin may be used in combination.

(following the manufacture of the film)

The sheet 5 is then produced, for example, in the following manner. First, a solution containing the composition for forming the second layer 51 is prepared. Then, the coating solution is applied to a substrate to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a second layer 51. As the substrate, SUS304, 6-4 alloy, metal foil such as aluminum foil, copper foil, or Ni foil; polyethylene terephthalate (PET), polyethylene, polypropylene; or fluorine-based release agent can be used. A plastic film or paper which has been surface-coated with a release agent such as a long-chain alkyl acrylate release agent. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and spin coating.

Then, it is punched into a specific shape (for example, a circular shape by punching or the like from the second layer 51 side. In the rectangular shape or the like, the punched portion (the second layer 51 having a circular shape or a rectangular shape) is left and the outer side is peeled off.

On the other hand, a solution containing the composition for forming the first adhesive layer 50 is prepared.

Then, the solution containing the composition for forming the first adhesive layer 50 is applied to the second layer so as to have a specific thickness on the substrate on which the second layer 51 having a specific shape is laminated. A coating film was formed on the side of 51. Thereafter, the coating film is dried under specific conditions to form the first adhesive layer 50. According to the above, the succeeding sheet 5 as shown in Fig. 1 is obtained. Furthermore, the adhesive sheet 6 shown in FIG. 2 and the adhesive sheet 7 shown in FIG. 3 can also be produced by the same method.

[Steps to fit on the base]

After the step of preparing the succeeding sheet 5, the prepared back sheet 5 is bonded to the susceptor 1 with the lower surface of the succeeding sheet 5 as a bonding surface (see FIG. 10).

[Formation of wiring layer]

Then, the wiring layer 2 is formed on the adhesive sheet 5 of the susceptor 1. As a method of forming a wiring layer on a susceptor having a bonding sheet, a conventionally known manufacturing method of a circuit substrate or an interposer such as a semi-additive method or a subtractive method can be used. By forming a wiring layer on the susceptor, dimensional stability is improved in the manufacturing process, and the operability of the thin wiring layer is improved. Hereinafter, an example of a method of forming a wiring layer will be described. In addition, in FIGS. 11 to 17, only the portion corresponding to the semiconductor wafer of 1 is illustrated, and the other portions are omitted, but the portions corresponding to the other semiconductor wafers are also the same.

[Formation of basic insulation layer]

As shown in FIG. 11, a base insulating layer 20a is formed on the succeeding sheet 5 of the susceptor 1. The material of the base insulating layer 20a is not particularly limited, and examples thereof include a polyimide resin, an acrylic resin, a polyether nitrile resin, a polyether oxime resin, an epoxy resin, and a polyethylene terephthalate resin. a known synthetic resin such as polyethylene naphthalate resin or polyvinyl chloride resin; or such a resin and synthetic bismuth cloth, glass cloth, glass non-woven fabric, and TiO ₂ , SiO ₂ , ZrO ₂ or mineral, clay, etc. Composite resin, etc. In particular, in terms of a soft insulating layer which is made thinner, has greater mechanical strength, and has better electrical properties (insulation characteristics, etc.), a preferred material is a polyimide resin. , epoxy resin, glass cloth composite epoxy resin. Among them, those having photosensitivity are preferred. The thickness of the base insulating layer 20a is preferably 0.1 to 50 μm.

Then, an opening h1 is formed at a position where the external connection conductor portion 22 should be formed (see FIG. 12). As a method of forming the opening h1, a previously known method can be employed. For example, when the base insulating layer 20a is formed using a photosensitive resin, the light is irradiated and formed by a photomask having a pattern corresponding to the opening h1, whereby the opening h1 can be formed. The shape of the opening is not particularly limited, but is preferably circular, and the diameter can be appropriately set, and can be, for example, 1.0 μm to 500 μm.

[Formation of metal film for contacts]

Then, a contact metal film 211 is formed on the opening h1. By forming the metal film 211, electrical connection can be more preferably performed, and corrosion resistance can be improved. The method for forming the metal film 211 is not particularly limited, and is preferably plated. Examples of the material of the metal film include copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, bismuth, chromium, and tungsten. Separate metals such as ruthenium; or alloys of two or more types including these. In the above-mentioned preferred examples of the material, gold, tin, nickel, and the like are exemplified, and as a preferred metal film, a two-layer structure in which the underlayer is Ni and the surface layer is Au is exemplified.

[Formation of seed film, lower side conduction path, conductor layer]

Then, a seed film (metal thin film) 23a for forming a metal material to be well deposited is formed on the wall surface of the portion where the conductor layer 23 and the via path 25 are to be formed (see FIG. 14). The seed film 23a can be formed, for example, by sputtering. Examples of the material of the seed film include a single metal such as copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, antimony, chromium, tungsten, or antimony; or an alloy containing two or more of these types. . The thickness of the conductor layer 23 is not particularly limited, and may be appropriately selected within the range of 1 to 500 nm. Moreover, the guide passage 25 is cylindrical A preferred shape has a diameter of 1.0 to 500 μm, preferably 3.0 to 300 μm. Thereafter, the conductor layer 23 having the specific wiring pattern and the via path 25 are formed. The wiring pattern can be formed, for example, by electroplating. Thereafter, the seed film of the portion of the conductorless layer 23 is removed.

Then, as shown in FIG. 15, the resist layer r1 is used to cover the upper portion of the conductor layer 23 (except for the portion where the via path should be formed), and the entire lower surface of the susceptor 1 is covered with the resist agent r2 to form a guide by electroplating. Pathway 24. The conductor layer 23, the via path 24, and the via path 25 correspond to the circuit 26 (see FIG. 5).

[Formation of adhesive layer]

Then, the resists r1 and r2 are removed, and the exposed conductor layer 23 and the vias 24 are formed to form an adhesive layer 20b containing epoxy and polyimide, and the upper end surface of the via 24 is used as a terminal. The adhesive layer is etched by an alkaline solution or the like so that the upper surface of the adhesive layer is exposed (see FIG. 16).

[Formation of the metal film on the end face of the connecting conductor portion]

Then, as shown in FIG. 17, the connecting conductor portion 21 is formed on the upper end surface of the via path 24 by, for example, plating. The connection conductor portion 21 can be formed, for example, by a nickel film, a gold film, or the like.

[Installation step, stripping step, dicing]

Then, the wiring layer 2 obtained by the above (attached so as to be detachable from the susceptor 1) is mounted (see FIG. 6). Thereafter, the adhesive layer 20b is aged, and further, each wafer 3 on the wiring layer 2 is subjected to resin sealing as needed (see FIG. 7). Further, as the resin sealing, a sheet-like sealing resin sheet can be used, and a liquid resin sealing material can also be used. Thereafter, the semiconductor wafer 3 with the wiring layer 2 sealed by the resin is separated from the susceptor 1 (refer to FIG. 8). Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. Thereafter, the semiconductor device 4 in which the semiconductor wafer 3 is mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 9). Furthermore, when the wafer (flip-chip connection) is mounted on the wiring layer 2, the wiring layer 2 and the wafer can also be used. The resin used for filling the primer is used. The resin for filling the primer may be in the form of a sheet or a liquid. Further, in the above-described embodiment, the case where the resin is sealed after the wafer is mounted has been described. However, it is also possible to use a conventionally known film for flip chip type semiconductor back surface on the wafer instead of the resin seal. The film for flip chip type semiconductor back surface is used for a film formed on a back surface of a wafer (semiconductor element) on which a flip chip is connected to a substrate, and is described in, for example, Japanese Patent Laid-Open Publication No. 2011-249739. The disclosure is omitted, and the description herein is omitted.

The embodiment of the first invention has been described above.

<2nd invention>

Hereinafter, the second invention (the 2-1st invention, the 2nd invention, and the 2-3th invention) will be described with respect to the first invention. In particular, the semiconductor device manufacturing method and the bonding sheet according to the second aspect of the present invention can exhibit the same characteristics and effects as those described in the second aspect of the present invention. Characteristics and effects.

A method of manufacturing a semiconductor device according to a second aspect of the present invention is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and at least includes a step of preparing a bonding sheet having a first adhesive layer and The adhesion force after being attached to the susceptor is lower than the second layer of the first adhesive layer, and the peripheral portion of the adhesive sheet is formed by the first adhesive layer, and the central portion is further inside than the peripheral portion. Formed by the second layer; a step of bonding the adhesive sheet to the susceptor; a step of forming a wiring on the adhesive sheet; a step of mounting a workpiece on the wiring; and after the mounting, cutting the slit from the workpiece side The step of separating the workpiece with the wiring from the susceptor until reaching the central portion of the splicing sheet.

Hereinafter, each step of the embodiment of the 2-1st invention will be described with reference to the drawings. In addition, the "upper surface" and "lower surface" used in the present invention in the 2-1th invention are used to indicate the positional relationship of the layers, for the bonding sheet or the semiconductor. The actual upper and lower posture of the device is not limited. In the following embodiments, the case where the workpiece of the present invention is a semiconductor wafer will be described. However, the present invention is not limited to this example, and may be a wafer in which no circuit is formed, or a wafer in which a circuit is formed. It can also be a singulated wafer that is not formed with a circuit. Fig. 18 is a cross-sectional schematic view showing a sheet of the embodiment of the 2-1th invention. 19 to 25 are schematic cross-sectional views for explaining the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

[Steps to prepare the next film]

First, a bonding sheet 6 having the first adhesive layer 60 and the second layer 61 having a lower adhesion force after being attached to the susceptor than the first adhesive layer 60 is prepared, and then the sheet 6 is prepared. The peripheral portion 64 is formed of the first adhesive layer 60, and the central portion 63 that is further inside than the peripheral portion 64 is formed by the second layer 61 (see FIG. 18).

In the subsequent sheet 6, since the first adhesive layer 60 having a higher adhesion force than the second layer 61 is present in the peripheral portion, the portion can be firmly bonded to the susceptor and the wiring. In the subsequent sheet 6, since the center portion 63 is formed by the second layer 61, if the adhesion force of the first adhesive layer 60 existing on the peripheral portion 64 is lowered in the step of separation described later, external force can be used. The susceptor and the semiconductor wafer with wiring are easily separated up and down.

Further, since the center portion 63 is formed by the second layer 61, and the second layer 61 is also in contact with the susceptor, the step 6 is separated from the susceptor after the separation step. Therefore, the susceptor is easily recovered.

Further, the peripheral portion 64 of the succeeding sheet 6 is formed of the first adhesive layer 60, and the central portion 63 that is further inside than the peripheral portion 64 is formed by the second layer 61. Therefore, after the semiconductor wafer is mounted on the wiring, the semiconductor wafer side is mounted. When the slit is cut out until reaching the central portion 63 of the succeeding sheet 6, the susceptor and the semiconductor wafer with the wiring are opposed to each other only via the second layer 61. As a result, in the step of separating, the susceptor and the wiring-attached semiconductor wafer can be easily separated up and down by an external force.

In the present embodiment, the adhesion force of the second layer 61 after being attached to the susceptor is lower than The adhesion force of the first adhesive layer 60 after being attached to the susceptor is not particularly limited, and the 90° peeling peeling force for the ruthenium wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. It is preferably 0.30 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 61 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 61 is 0.30 N/20 mm or less, the second layer 61 can be easily peeled off from the susceptor. On the other hand, the lower the above-described adhesion force of the second layer 61, the easier it is to peel off from the susceptor.

Moreover, the adhesion force of the first adhesive layer 60 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 61 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 60 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 60 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 6 can be more firmly fixed.

The thickness of the sheet 6 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the adhesive sheet 6 is 0.1 μm or more, the adhesive sheet 6 can be easily formed. On the other hand, when the thickness of the adhesive sheet 6 is 100 μm or less, it is possible to suppress or prevent uneven thickness of the adhesive sheet 6 or shrinkage during heating, and it is advantageous in the step of forming wiring.

[Steps to fit on the base]

After the preparation of the subsequent sheet 6 step, the prepared back sheet 6 is bonded to the susceptor 1 (see Fig. 19). The bonding method is not particularly limited, and a method using pressure bonding is preferred. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are preferably 20 ° C to 150 ° C, 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, since the adhesive sheet 6 is exposed on the lower surface of the first adhesive layer 60 having a higher adhesive force than the second layer 61, it can be firmly bonded to the susceptor 1.

[Steps of forming a wiring layer]

Then, on the bonding sheet 6, the wiring layer 2 having the connection conductor portion 21 and the wiring 26 that can be connected to the electrode 31 of the semiconductor wafer 3 is formed so that the connection conductor portion 21 is exposed on the upper surface of the wiring layer 2 (refer to Figure 20). The wiring layer 2 has an external connection conductor portion 22 for electrically connecting to the outside on the side of the bonding sheet 6. In addition, FIG. 20 shows a case where the connection conductor portion 21 is exposed to the upper surface of the wiring layer 2 in a convex shape. However, in the second aspect of the invention, the connection conductor portion may be exposed on the upper surface of the wiring layer, and the connection may be performed. The upper surface of the conductor portion may be flush with the upper surface of the wiring layer. Then, since the sheet 6 is exposed on the upper surface of the first adhesive layer 60, the wiring layer 2 formed on the adhesive sheet 6 is firmly fixed.

[Steps for installing a semiconductor wafer]

Then, as shown in FIG. 21, the connection conductor portion 21 of the wiring layer 2 is connected to the electrode 31 of the semiconductor wafer 3, and the semiconductor wafer 3 is mounted on the wiring layer 2 (wiring 26). Fig. 21 is a view showing the projections of the connecting conductor portion 21 and the electrode 31 after the mounting is omitted. In addition, FIG. 21 shows a case where a plurality of semiconductor wafers 3 are mounted on the wiring layer 2. However, the number of semiconductor wafers mounted on the wiring layer is not particularly limited and may be one.

Then, as shown in FIG. 22, resin sealing is performed by the resin 32 so as to cover the semiconductor wafer 3 as needed. The resin 32 for resin sealing can be suitably used by a conventionally known person or the like, and the resin sealing method can also employ a previously known method.

[Steps to separate from the base]

Then, as shown in FIG. 23, the slit 65 is cut out from the semiconductor wafer 3 side until reaching the central portion 63 of the succeeding sheet 6. At this time, the slits are also cut out simultaneously on the resin 32 and the wiring layer 2. Thereby, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 are opposed to each other only via the second layer 61. Thereafter, an external force is applied, whereby the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 attached thereto are vertically separated as shown in FIG. At this time, since the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 are opposed to each other only via the second layer 61 having a relatively low adhesion force, the susceptor 1 and the semiconductor with the wiring layer 2 can be externally biased. The wafer 3 is easily separated up and down. As a method of forming the slit, a previously known method or the like can be employed, and a cutter such as a cutter or a high energy generated by a laser or the like can be used. Measuring line.

Thereafter, the semiconductor device 4 having the semiconductor wafer 3 mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 25). Further, the wiring layer 2 from which the susceptor 1 is peeled off may be subjected to processing for imparting solder balls.

The outline of the method of manufacturing the semiconductor device according to the embodiment of the 2-1th invention has been described above. Hereinafter, an example of a method of manufacturing a semiconductor device of the present embodiment will be described in detail.

[Preparation of the pedestal with the film]

First, the susceptor 1 is prepared (refer to FIG. 19). The susceptor 1 can be used as described in the item of the first invention.

Then, the adhesive sheet 6 is bonded to the susceptor 1 (see FIG. 19). Next, as described above, the peripheral portion 64 is formed of the first adhesive layer 60, and the central portion 63 that is further inside than the peripheral portion 64 is formed of the second layer 61.

The adhesive composition constituting the first adhesive layer 60 is not particularly limited as long as the adhesion of the first adhesive layer 60 is higher than the adhesive force of the second layer 61. As the adhesive composition constituting the first adhesive layer 60, a polyimine resin containing a constituent unit derived from a diamine having an oxime imine group and having at least a part of an ether structure may be used in combination as the above-mentioned polyfluorene. A polyamide resin precursor, a polyphthalic acid resin, a thermoplastic resin, a thermosetting resin, and the like.

The above polyimine resin and the above polyoxyxylene resin can be used as described in the first aspect of the invention.

When the polyadone resin is used in the first adhesive layer 60, other additives may be contained in the first adhesive layer 60 as needed. As such other additives, those described in the item of the first invention can be used.

The composition constituting the second layer 61 is not particularly limited as long as the adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60. As the second part of the above The material of the layer 61 may, for example, be an inorganic material such as Cu, Cr, Ni or Ti.

Further, as the composition constituting the second layer 61, the above-mentioned polyimine resin described as the adhesive composition constituting the first adhesive layer 60 may be used, and it may be used as the polyimine resin. As the polyamic acid of the precursor, the above polyoxyl resin may be used, and the above thermoplastic resin and the above thermosetting resin may be used in combination.

(following the manufacture of the film)

Next, the sheet 6 is produced, for example, in the following manner. First, a solution containing the composition for forming the second layer 61 is prepared. Then, the coating solution is applied onto a substrate to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a second layer 61. As the substrate, SUS304, 6-4 alloy, metal foil such as aluminum foil, copper foil, or Ni foil; polyethylene terephthalate (PET), polyethylene, polypropylene; or fluorine-based release agent can be used. A plastic film or paper surface-coated with a release agent such as a long-chain alkyl acrylate release agent. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and spin coating.

Then, the second layer 61 is punched into a specific shape (for example, a circular shape or a rectangular shape) by punching or the like, and the punched portion (the second layer 61 having a circular shape or a rectangular shape) is left and the outer side is left. Peel off and remove.

On the other hand, a solution containing a composition for forming the first adhesive layer 60 is prepared.

Then, the solution containing the composition for forming the first adhesive layer 60 is applied to the second layer so as to have a specific thickness on the substrate on which the second layer 61 having a specific shape is formed by lamination. A coating film was formed on the side of 61. Thereafter, the coating film is dried under specific conditions to form the first adhesive layer 60. According to the above, the succeeding sheet 6 as shown in Fig. 18 is obtained. Further, the adhesive sheet 7 as shown in Fig. 26 described below can also be produced by the same method.

[Formation of wiring layer]

Then, a wiring layer 2 is formed on the bonding sheet 6 of the susceptor 1 (see FIG. 20). The method of forming a wiring layer on a pedestal having a bonding sheet can be as described in the item of the first invention. law.

[Installation step, stripping step, dicing]

Then, the wafer (see FIG. 21) is mounted on the wiring layer 2 obtained as described above (attached so as to be peelable from the susceptor 1). Thereafter, the wiring layer 2 is aged, and further, each of the wafers 3 on the wiring layer 2 is resin-sealed as needed (see FIG. 22). Further, as the resin sealing, a sheet-like sealing resin sheet can be used, and a liquid resin sealing material can also be used. Thereafter, the semiconductor wafer 3 with the wiring layer 2 sealed by the resin is separated from the susceptor 1 (refer to FIG. 24). Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. Thereafter, the semiconductor device 4 having the semiconductor wafer 3 mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 25). Further, when a wafer (flip-chip connection) is mounted on the wiring layer 2, a resin for filling the underlayer may be used between the wiring layer 2 and the wafer. The resin for filling the primer may be in the form of a sheet or a liquid. Further, in the above-described embodiment, the case where the resin is sealed after the wafer is mounted has been described. However, a conventionally known film for flip chip type semiconductor back surface may be formed on the wafer instead of the resin sealing. The film for flip chip type semiconductor back surface is used for forming a film on a back surface of a wafer (semiconductor element) to which a flip chip is attached to a substrate, and is described in, for example, Japanese Patent Laid-Open No. 2011-249739. The disclosure is omitted, and the description herein is omitted.

The embodiment of the 2-1th invention has been described above. Next, the invention of 2-2 will be described.

According to a second aspect of the present invention, in a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, at least a step of preparing a bonding sheet having a first adhesive layer and The adhesion force after being attached to the susceptor is lower than the second layer of the first adhesive layer, and the peripheral portion of the adhesive sheet is formed of the first adhesive layer, and the central portion of the inner side of the peripheral portion is Forming a layer of the first adhesive layer and the second layer; a step of bonding the bonding sheet to the susceptor on a side where only the side on which the first adhesive layer is exposed is used as a bonding surface; a step of forming a wiring on the bonding sheet; and a step of mounting a workpiece on the wiring; After the mounting, the step of cutting the workpiece with the wiring from the susceptor by cutting the slit from the workpiece side until reaching the first adhesive layer at the center portion.

Hereinafter, each step of the second embodiment of the present invention will be described with reference to the drawings. However, in the embodiment of the second aspect of the present invention described below, in addition to the step of preparing a sheet, the step of bonding to the susceptor, and the step of separating from the susceptor, the 2-1th invention is Since the embodiment is the same, the steps of preparing the succeeding film, the step of bonding to the susceptor, and the step of separating from the pedestal will be described, and the description thereof will be omitted. Fig. 26 is a cross-sectional schematic view showing a sheet of the second embodiment of the present invention. Fig. 27 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to a second embodiment of the present invention.

[Steps to prepare the next film]

First, a bonding sheet having a first adhesive layer 70 and a bonding sheet 7 having a lower adhesion force after being attached to the susceptor than the second layer 71 of the first adhesive layer 70 is prepared, and the bonding sheet is further provided. The peripheral portion 74 of the seventh portion 74 is formed of the first adhesive layer 70, and the central portion 73 of the inner side of the peripheral portion 74 is formed of a laminate of the first adhesive layer 70 and the second layer 71 (see Fig. 26).

The adhesion force of the second layer 71 after being attached to the susceptor is not particularly limited as long as it is lower than the adhesion force of the first adhesive layer 70 after being attached to the susceptor, and the temperature is 23±2° C. and the peeling speed is high. The 90° peeling peeling force for the tantalum wafer under the condition of 300 mm/min is preferably 0.30 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 71 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. If the above-mentioned adhesion force of the second layer 71 is 0.30 N/20 mm or less, the separation step is performed. In this case, the semiconductor wafer with wiring can be easily peeled off from the second layer.

Moreover, the adhesion force of the first adhesive layer 70 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 71 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 70 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 70 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 7 can be more firmly fixed.

The thickness of the sheet 7 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the succeeding sheet 7 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, when the thickness of the adhesive sheet 7 is 100 μm or less, it is possible to suppress or prevent uneven thickness of the adhesive sheet 7 or shrinkage during heating, and it is advantageous in the step of forming wiring.

The thickness of the central portion 73 of the first adhesive layer 70 is preferably from 0.01 to 99 μm, more preferably from 0.05 to 10 μm.

The thickness of the second layer 71 (thickness of the central portion 73) is preferably from 0.09 to 99.9 μm, more preferably from 0.05 to 15 μm.

Since the first adhesive layer is usually lower in the elastic modulus than the second layer, it is easy to cause undulation on the surface when the layer is formed. From the above viewpoint, it is preferable to make the first adhesive layer thin and to thicken the second layer. On the other hand, since the first adhesive layer is usually higher in the glass transition temperature than the second layer, the first adhesive layer has a large shrinkage when the layer is formed. From the above viewpoint, it is preferable to make the first adhesive layer thick and to make the second layer thin. Therefore, in the present invention, in consideration of both the surface undulation at the time of layer formation and the amount of shrinkage at the time of layer formation, the thickness of the first adhesive layer and the thickness of the second layer are preferably selected within the above numerical range.

[Steps to fit on the base]

After the step of preparing the succeeding sheet 7, the prepared back sheet 7 is bonded to the susceptor 1 by using the surface on the side where only the first adhesive layer 70 is exposed as a bonding surface (see FIG. 27).

[Steps to separate from the base]

In the step of separating from the susceptor, first, the slit 75 is cut out from the semiconductor wafer 3 side on the succeeding sheet 7 until reaching the first adhesive layer 70 of the central portion 73. At this time, the slits are also cut out simultaneously on the resin 32 and the wiring layer 2. Thereby, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 are opposed to each other only via the laminated portion of the first subsequent layer 70 and the second layer 71. At this time, the first adhesive layer 70 is bonded to the susceptor 1, and the second layer 71 is brought into contact with the semiconductor wafer 3 with the wiring layer 2 attached thereto. As a result, in the step of separating, the interface between the second layer 71 and the wiring layer 2 can be easily peeled off by an external force. Therefore, the semiconductor wafer 3 with the wiring layer 2 can be easily separated from the susceptor 1.

The embodiment of the second aspect of the present invention has been described above. Next, the 2-3th invention will be described.

The method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and at least includes a step of preparing a bonding sheet having a first adhesive layer and The adhesion force after being attached to the susceptor is lower than the second layer of the first adhesive layer, and the peripheral portion of the adhesive sheet is formed of the first adhesive layer, and the central portion of the inner side of the peripheral portion is The first adhesive layer is formed of a laminate of the second layer; and the step of bonding the adhesive sheet to the susceptor as a bonding surface on a surface opposite to the surface on which the first adhesive layer is exposed is used as a bonding surface a step of forming a wiring on the bonding sheet; a step of mounting a workpiece on the wiring; and after the mounting, cutting the cutout from the workpiece side to the second layer until the second layer is reached, thereby providing wiring The step of separating the workpiece from the pedestal.

Hereinafter, each step of the embodiment of the 2-3th invention will be described with reference to the drawings. However, in the embodiment of the 2-3th invention described below, in addition to the steps of preparing the adhesive sheet, the step of bonding to the susceptor, and the step of separating from the susceptor, Since the second embodiment of the present invention is the same, the steps of preparing the succeeding film, the step of bonding to the susceptor, and the step of separating from the pedestal will be described, and the description thereof will be omitted. Figure 28 is a cross-sectional schematic view showing a sheet of an embodiment of the 2-3th invention. Fig. 29 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

[Steps to prepare the next film]

First, a bonding sheet having a first adhesive layer 50 and a bonding sheet 5 having a lower adhesion force than the second layer 51 of the first adhesive layer 50 after being attached to the susceptor is prepared, and then the film is attached. The peripheral portion 54 of the fifth portion 54 is formed of the first adhesive layer 50, and the central portion 53 that is further inside than the peripheral portion 54 is formed of a laminate of the first adhesive layer 50 and the second layer 51 (see FIG. 28).

The adhesion force of the second layer 51 after being attached to the susceptor is not particularly limited as long as it is lower than the adhesion force of the first adhesive layer 50 after being attached to the susceptor, and the temperature is 23±2° C. and the peeling speed is high. The 90° peeling peeling force for the tantalum wafer under the condition of 300 mm/min is preferably 0.30 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 51 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 51 is 0.30 N/20 mm or less, the separation from the susceptor 1 or the first adhesive layer 50 can be easily performed in the separation step.

Moreover, the adhesion force of the first adhesive layer 50 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 51 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 50 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 50 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 5 can be more firmly fixed to the peripheral portion 54.

The thickness of the sheet 5 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the adhesive sheet 5 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, if When the thickness of the sheet 5 is 100 μm or less, it is possible to suppress or prevent the thickness unevenness of the back sheet 5 or the shrinkage during heating, and it is advantageous in the step of forming the wiring.

The thickness of the central portion 53 of the first adhesive layer 50 is preferably from 0.01 to 99 μm, more preferably from 0.05 to 10 μm.

The thickness of the second layer 51 (thickness of the central portion 53) is preferably from 0.09 to 99.9 μm, more preferably from 0.05 to 15 μm.

Since the first adhesive layer is usually lower in the elastic modulus than the second layer, it is easy to cause undulation on the surface when the layer is formed. From the above viewpoint, it is preferable to make the first adhesive layer thin and to thicken the second layer. On the other hand, since the first adhesive layer is usually higher in the glass transition temperature than the second layer, the first adhesive layer has a large shrinkage when the layer is formed. From the above viewpoint, it is preferable to make the first adhesive layer thick and to make the second layer thin. Therefore, in the present invention, in consideration of both the surface undulation at the time of layer formation and the amount of shrinkage at the time of layer formation, the thickness of the first adhesive layer and the thickness of the second layer are preferably selected within the above numerical range.

[Steps to fit on the base]

After the preparation of the next sheet 5 step, the prepared back sheet 5 is bonded to the susceptor 1 only by the surface on the side opposite to the surface on the side where the first adhesive layer 50 is exposed as a bonding surface (see FIG. 29).

[Steps to separate from the base]

In the step of separating from the susceptor, first, the slit 55 is cut out from the semiconductor wafer 3 side on the succeeding sheet 5 until reaching the second layer 51. At this time, the slits are also cut out simultaneously on the resin 32 and the wiring layer 2. Thereby, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 are opposed to each other only via the laminated portion of the first adhesive layer 50 and the second layer 51. Therefore, in the step of separating, the interface between the first adhesive layer 70 and the second layer 51 or the interface between the second layer 51 and the susceptor 1 can be easily peeled off by an external force. Thereafter, the first adhesive layer 50 is peeled off from the wiring layer 2. Thereby, the susceptor and the semiconductor wafer 3 with the wiring layer 2 can be easily separated up and down.

The embodiment of the second invention has been described above.

<3rd invention>

Hereinafter, the third aspect of the invention will be described with respect to the first invention. In particular, the manufacturing method and the bonding sheet of the semiconductor device according to the third aspect of the present invention are the same as the manufacturing method and the bonding sheet of the semiconductor device according to the first aspect of the invention. Characteristics and effects.

A method of manufacturing a semiconductor device according to a third aspect of the present invention is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and at least includes a step of preparing a bonding sheet having a first adhesive layer and a paste. a bonding force after being attached to the susceptor is lower than the second layer of the first adhesive layer; a step of bonding the bonding sheet to the susceptor; and forming a wiring on the bonding sheet after being bonded to the susceptor a step of mounting a workpiece on the wiring; and a step of separating the workpiece with the wiring from the susceptor after the mounting.

Hereinafter, each step of an embodiment of the third invention will be described with reference to the drawings. In addition, the "upper surface" and "lower surface" used in the third invention are used to indicate the positional relationship of the layers, and the actual upper and lower postures of the adhesive sheet or the semiconductor device are not limited. . In the following embodiments, the case where the workpiece of the third invention is a semiconductor wafer will be described. However, the present invention is not limited to this example, and may be a wafer in which no circuit is formed, or may be formed as a circuit. The wafer may also be a singulated wafer that is not formed with a circuit.

[Steps to prepare the next film]

First, a bonding sheet having a first adhesive layer and a bonding force after being attached to the susceptor is lower than the second layer of the first adhesive layer is prepared.

Here, the succeeding film of this embodiment will be described. Figure 30 is a cross-sectional schematic view showing a sheet of an embodiment of the third invention. As shown in FIG. 30, the succeeding sheet 5 has a structure in which a first adhesive layer 50 is laminated on the second layer 51. The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Further, in the step of bonding the bonding sheet 5 to the susceptor, the second layer 51 is bonded to the susceptor as a bonding surface.

In the subsequent sheet 5, since the first adhesive layer 50 is present, wiring or the like can be fixed to the susceptor in advance in the step of forming wiring or the step of mounting the workpiece. Further, not only the first adhesive layer 50 but also the second layer 51 having a lower adhesive force than the first adhesive layer 50, the susceptor and the wiring-attached workpiece can be separated by an external force in the separating step. Easily separate up and down. Further, since the succeeding sheet 5 is bonded to the susceptor by using the second layer 51 as a bonding surface, wiring is formed on the first adhesive layer 50. Therefore, in the step of forming the wiring or the step of mounting the workpiece, the wiring or the like can be fixed to the susceptor more firmly in advance.

In the present embodiment, the adhesion force of the second layer 51 after being attached to the susceptor is not particularly limited as long as it is lower than the adhesion force of the first adhesive layer 50 after being attached to the susceptor, and the temperature is 23± The 90° peeling peeling force for the tantalum wafer under the conditions of 2° C. and a peeling speed of 300 mm/min is preferably 0.3 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 51 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 51 is 0.30 N/20 mm or less, the second layer 51 can be easily peeled off from the susceptor. On the other hand, the lower the above-described adhesion force of the second layer 51, the easier it is to peel off from the susceptor.

Moreover, the adhesion force of the first adhesive layer 50 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 51 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the conditions of the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40 N/20 mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 50 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 50 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 5 can be more firmly fixed.

The adhesion between the second layer 51 and the first adhesive layer 50 is preferably higher than the adhesion between the second layer 51 and the susceptor 1 (the second layer 51 is attached to the susceptor 1) The adhesion between the 2 layers 51 and the susceptor 1). If the adhesion between the second layer 51 and the first adhesive layer 50 is lower than the adhesion between the second layer 51 and the susceptor 1, the separation step may be first applied to the second layer 51 and the pedestal. 1 After peeling off, the first adhesive layer 50 and the second 51 together are peeled off from the wiring 26 (wiring layer 2).

The 180° tear-off peeling force of the second layer 51 and the susceptor 1 at a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably 0.3 N/20 mm or less, more preferably 0.2 N/ 20mm or less. Moreover, the above-mentioned adhesive force between the second layer 51 and the susceptor 1 is peeled off by 180° under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min from the viewpoint of not peeling off during the wiring forming step. The peeling force meter is preferably 0.001 N/20 mm or more, more preferably 0.01 N/20 mm or more.

The adhesion force between the second layer 51 and the first adhesive layer 50 is preferably 0.001 N/20 mm or more, more preferably 0.001 N/20 mm or more, at a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min. 10N/20mm or less. Moreover, the above-mentioned adhesive force between the second layer 51 and the first adhesive layer 50 can be set to 1.0 N/20 mm by a 180° peeling peeling force under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. Below, 0.1N/20mm or less.

The thickness of the sheet 5 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the adhesive sheet 5 is 0.1 μm or more, a multilayer structure can be easily formed. On the other hand, when the thickness of the adhesive sheet 5 is 100 μm or less, it is possible to suppress or prevent uneven thickness of the adhesive sheet 5 or shrinkage during heating, and it is advantageous in the step of forming wiring.

The thickness of the first adhesive layer 50 is preferably from 0.01 to 99 μm, more preferably from 0.05 to 10 μm.

The thickness of the second layer 51 is preferably from 0.09 to 99.9 μm, more preferably from 0.05 to 15 μm.

Since the first adhesive layer is usually lower in the elastic modulus than the second layer, it is easy to cause undulation on the surface when the layer is formed. From the above viewpoint, it is preferable to make the first adhesive layer thin and to thicken the second layer. On the other hand, since the first adhesive layer is usually higher in the glass transition temperature than the second layer, the first adhesive layer has a large shrinkage when the layer is formed. From the above viewpoint, it is preferable to make the first adhesive layer thick and to make the second layer thin. Therefore, in the third aspect of the invention, the thickness of the first adhesive layer and the second layer are considered in consideration of both the surface undulation at the time of layer formation and the amount of shrinkage at the time of layer formation. The thickness is preferably selected within the above numerical range.

The adhesive sheet of the third invention is not limited to the adhesive sheet 5 shown in Fig. 30, and may be a continuous sheet as shown in Fig. 31. Figure 31 is a cross-sectional schematic view showing a sheet of another embodiment of the third invention.

As shown in FIG. 31, the succeeding sheet 6 has a structure in which a second layer 61 is laminated on the first adhesive layer 60. The adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60. Further, in the step of bonding the bonding sheet 6 to the susceptor, the first adhesive layer 60 is bonded to the susceptor as a bonding surface.

In the subsequent sheet 6, since the first adhesive layer 60 is present, wiring or the like can be fixed to the susceptor in advance in the step of forming wiring or the step of mounting the workpiece. Further, not only the first adhesive layer 60 but also the second layer 61 having a lower adhesive force than the first adhesive layer 60 is provided. Therefore, in the step of separating, the susceptor and the wiring-attached workpiece can be externally driven. Easily separate up and down. Further, since the adhesive sheet 6 is bonded to the susceptor by using the first adhesive layer 60 as a bonding surface, the wiring or the like can be fixed to the base more firmly in advance in the step of forming the wiring or the step of mounting the workpiece. On the seat.

The adhesion force of the second layer 61 after being attached to the susceptor is not particularly limited as long as it is lower than the adhesion force of the first adhesive layer 60 after being attached to the susceptor, and the temperature is 23±2° C. and the peeling speed. The 90° peeling peeling force for the tantalum wafer under the condition of 300 mm/min is preferably 0.30 N/20 mm or less, more preferably 0.20 N/20 mm or less. Further, the lower limit of the adhesion force of the second layer 61 is not particularly limited, and is, for example, 0 N/20 mm or more, and may be 0.001 N/20 mm or more. When the adhesion force of the second layer 61 is 0.30 N/20 mm or less, the second layer 61 can be easily peeled off from the susceptor. On the other hand, the lower the above-described adhesion force of the second layer 61, the easier it is to peel off from the susceptor.

Moreover, the adhesion force of the first adhesive layer 60 after being attached to the susceptor is not particularly limited as long as it is higher than the adhesion force of the second layer 61 after being attached to the susceptor, and the temperature is 23±2° C. The 90° peeling peeling force for the tantalum wafer under the condition of the peeling speed of 300 mm/min is preferably 0.30N/20mm or more, more preferably 0.40N/20mm or more. In addition, the upper limit of the adhesion force of the first adhesive layer 60 is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, 20 N/20 mm or less. When the adhesion force of the first adhesive layer 60 is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 6 can be more firmly fixed.

The adhesion between the second layer 61 and the first adhesive layer 60 is preferably lower than the adhesion between the first adhesive layer 60 and the susceptor 1 (the first adhesive layer 60 is attached to the susceptor 1) The adhesion between the first adhesive layer 60 and the susceptor 1 in the upper case). If the adhesion between the second layer 61 and the first adhesive layer 60 is lower than the adhesion between the first adhesive layer 60 and the susceptor 1, the separation step may be first performed on the second layer 61. The first adhesive layer 60 is peeled off from each other, and thereafter the second layer 61 is peeled off from the wiring 26 (wiring layer 2).

The 180° tear-off peeling force of the second layer 61 and the first adhesive layer 60 at a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably 0.3 N/20 mm or less, more preferably 0.2N/20mm or less. Moreover, the adhesion force between the second layer 61 and the first adhesive layer 60 is 180 at a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min from the viewpoint of not peeling off during the wiring forming step. The tear-off peeling force meter is preferably 0.001 N/20 mm or more, more preferably 0.01 N/20 mm or more.

The 180° tear-off peeling force of the first adhesive layer 60 and the susceptor at a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably 0.3 N/20 mm or more, and more preferably 0.4N/20mm or more. Moreover, the above-mentioned adhesive force between the first adhesive layer 60 and the susceptor 1 can be set to 30 N/20 mm or less at a temperature of 23±2° C. and a peeling speed of 300 mm/min. 20N/20mm or less.

The thickness of the sheet 6 is preferably from 0.1 to 100 μm, more preferably from 0.5 to 25 μm. When the thickness of the adhesive sheet 6 is 0.1 μm or more, the adhesive sheet 6 can be easily formed. On the other hand, when the thickness of the adhesive sheet 6 is 100 μm or less, it is possible to suppress or prevent uneven thickness of the adhesive sheet 6 or shrinkage during heating, and it is advantageous in the step of forming wiring.

The thickness of the first adhesive layer 60 is preferably 0.01 to 99 μm, more preferably 0.05 to 10 Mm.

The thickness of the second layer 61 is preferably from 0.09 to 99.9 μm, more preferably from 0.05 to 15 μm.

[Steps to fit on the base]

In the following description, the case where the back sheet 5 shown in Fig. 30 is used will be described. 32 to 37 are schematic cross-sectional views for explaining the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention. After the preparation of the next sheet 5 step, the prepared back sheet 5 is bonded to the susceptor 1 with the lower surface of the succeeding sheet 5 as a bonding surface (see FIG. 32). The bonding method is not particularly limited, and a method using pressure bonding is preferred. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are preferably 20 ° C to 150 ° C, 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec.

[Steps for forming wiring]

Then, on the bonding sheet 5, the wiring layer 2 having the connection conductor portion 21 and the wiring 26 that can be connected to the electrode 31 of the semiconductor wafer 3 is formed so that the connection conductor portion 21 is exposed on the upper surface of the wiring layer 2 (refer to Figure 33). The wiring layer 2 has an external connection conductor portion 22 for electrically connecting to the outside on the side of the back sheet 5. In addition, FIG. 33 shows a case where the connection conductor portion 21 is exposed to the upper surface of the wiring layer 2 in a convex shape. However, in the third aspect of the invention, the connection conductor portion may be exposed on the upper surface of the wiring layer, and the connection conductor may be used. The upper surface of the portion may be the same plane as the upper surface of the wiring layer. In the subsequent sheet 5, since only the first adhesive layer 50 is exposed on the upper surface, the wiring layer formed on the adhesive sheet 50 can be more firmly fixed.

[Steps for installing a semiconductor wafer]

Then, as shown in FIG. 34, the connection conductor portion 21 of the wiring layer 2 is connected to the electrode 31 of the semiconductor wafer 3, and the semiconductor wafer 3 is mounted on the wiring layer 2 (wiring 26). Fig. 34 shows the projections of the connecting conductor portion 21 and the electrode 31 after the mounting is omitted. In addition, FIG. 34 shows a case where a plurality of semiconductor wafers 3 are mounted on the wiring layer 2. However, the number of semiconductor wafers mounted on the wiring layer is not particularly limited, and may be one.

Then, as shown in FIG. 35, the resin is used in such a manner as to cover the semiconductor wafer 3 as needed. 32 resin sealing. The resin 32 for resin sealing can be suitably used by a conventionally known person or the like, and the resin sealing method can also employ a previously known method.

[Steps to separate from the base]

Then, as shown in FIG. 36, the resin-sealed semiconductor wafer 3 with the wiring layer 2 attached thereto is separated from the susceptor 1. Specifically, only the susceptor 1 is peeled off by applying an external force, and then the method of peeling off the slab 5 by 90° is performed. Further, a method in which the second layer 51 with the susceptor 1 is peeled off by applying an external force, and then the first adhesive layer 50 is subjected to 90° peeling is exemplified. Further, a method of peeling off the adhesive sheet 5 with the susceptor 1 and then peeling off the adhesive force of the first adhesive layer 50 may be mentioned. Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. As a method of lowering the adhesion force of the first adhesive layer 50, a method of reducing the adhesion force by dissolving the first adhesive layer 50 in a solvent is used, and the first adhesive layer 50 is physically used by a cutter or a laser. A method of cutting out the slit to reduce the adhesion force; forming a first adhesive layer 50 by using a material whose adhesion is lowered by heating, and reducing the adhesion by heating; and lowering the first adhesive layer 50 by ultrasonic cleaning The method of force and so on. Further, in the above-described ultrasonic cleaning, the cleaning liquid may be heated as needed, and a surfactant or the like may be used as the cleaning liquid.

Thereafter, the semiconductor device 4 having the semiconductor wafer 3 mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 37). Further, the wiring layer 2 from which the susceptor 1 is peeled off may be subjected to processing for imparting solder balls.

The outline of the method of manufacturing the semiconductor device of the present embodiment has been described above. Hereinafter, an example of a method of manufacturing a semiconductor device of the present embodiment will be described in detail.

[Preparation of the pedestal with the film]

First, the susceptor 1 is prepared (see Fig. 32). The susceptor 1 can be used as described in the item of the first invention.

Then, the back sheet 5 is bonded to the susceptor 1 (see FIG. 32). Next, the sheet 5 has a configuration in which the first adhesive layer 50 is laminated on the second layer 51 as described above.

The adhesive composition constituting the first adhesive layer 50 is not particularly limited as long as the adhesion of the first adhesive layer 50 is higher than the adhesive force of the second layer 51. As the adhesive composition constituting the first adhesive layer 50, a polyimine resin containing a constituent unit derived from a diamine having an oxime group and having at least a part of an ether structure may be used in combination as the above-mentioned polyfluorene. A precursor of a imine resin, such as a polyamine, a polyoxyl resin, a thermoplastic resin, and a thermosetting resin.

The above polyimine resin and the above polyoxyxylene resin can be used as described in the first aspect of the invention.

When the polyadone resin is used in the first adhesive layer 50, other additives may be contained in the first adhesive layer 50 as needed. As such other additives, those described in the item of the first invention can be used.

The composition constituting the second layer 51 is not particularly limited as long as the adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Examples of the material constituting the second layer 51 include inorganic materials such as Cu, Cr, Ni, and Ti.

Further, as the composition constituting the second layer 51, the above-mentioned polyimine resin which is described as an adhesive composition constituting the first adhesive layer 50 may be used, and may be used as the precursor of the above polyimine resin. As the polyamic acid of the substance, the above polyoxyl resin may be used, and the above thermoplastic resin and the above thermosetting resin may be used in combination.

(following the manufacture of the film)

Next, the sheet 5 is produced, for example, in the following manner. First, a solution containing the composition for forming the second layer 51 is prepared. Then, the coating solution is applied onto a substrate to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a second layer 51. As the substrate, SUS304, 6-4 alloy; metal foil such as aluminum foil, copper foil, or Ni foil; polyethylene terephthalate (PET), polyethylene, polypropylene; or A plastic film or paper surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and spin coating.

On the other hand, a solution containing the composition for forming the first adhesive layer 50 is prepared.

Then, on the substrate on which the second layer 51 is laminated, a solution containing the composition for forming the first adhesive layer 50 is applied to the second layer 51 side so as to have a specific thickness to form a coating. membrane. Thereafter, the coating film is dried under specific conditions to form the first adhesive layer 50. According to the above, the succeeding sheet 5 as shown in Fig. 30 is obtained. Further, the adhesive sheet 6 shown in Fig. 31 can also be produced by the same method.

[Formation of wiring layer]

Then, the wiring layer 2 is formed on the bonding sheet 5 of the susceptor 1 (see FIG. 33). The method of forming the wiring layer on the susceptor having the succeeding film can employ the method described in the first aspect of the invention.

[Installation step, stripping step, dicing]

Then, the wafer (see FIG. 34) is mounted on the wiring layer 2 obtained as described above (attached so as to be peelable from the susceptor 1). Thereafter, the wiring layer 2 is aged, and further, each of the wafers 3 on the wiring layer 2 is resin-sealed as needed (see FIG. 35). Further, as the resin sealing, a sheet-like sealing resin sheet can be used, and a liquid resin sealing material can also be used. Thereafter, the semiconductor wafer 3 with the wiring layer 2 sealed by the resin is separated from the susceptor 1 (see FIG. 36). Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. Thereafter, the semiconductor device 4 having the semiconductor wafer 3 mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 37). Further, when a wafer (flip-chip connection) is mounted on the wiring layer 2, a resin for filling the underlayer may be used between the wiring layer 2 and the wafer. The resin for filling the primer may be in the form of a sheet or a liquid. Further, in the above embodiment, the case where the resin is sealed after the wafer is mounted has been described. However, instead of the resin sealing, the previously known flip chip may be formed on the wafer. A film for the back side of a chip type semiconductor. The film for flip chip type semiconductor back surface is used for forming a film on a back surface of a wafer (semiconductor element) to which a flip chip is attached to a substrate, and is described in, for example, Japanese Patent Laid-Open No. 2011-249739. The disclosure is omitted, and the description herein is omitted.

In the above embodiment, the case where the first adhesive layer and the second layer are the same size as the susceptor has been described. However, in the third aspect of the invention, the laminated form of the first adhesive layer and the second layer is not limited to this example. In the third embodiment of the present invention, for example, the layer on the side in contact with the susceptor may be larger than the layer on the side not in contact with the susceptor.

38 is a schematic cross-sectional view showing a state in which a wiring layer is formed on a bonding sheet of another embodiment and a semiconductor wafer is mounted. As shown in FIG. 38, the succeeding sheet 105 has a structure in which a first adhesive layer 150 is laminated and a second layer 151 having a larger size than the first adhesive layer 150 in plan view. Next, the sheet 105 is fixed to the susceptor 1 in such a manner that the second layer 151 is in contact with the susceptor 1. On the opposite side of the susceptor 1 of the bonding sheet 105, a wiring layer 2 is formed. On the wiring layer 2, a semiconductor wafer 3 is mounted. The wiring layer 2 is formed on the first adhesive layer 150 and the portion where the second layer 151 is exposed. Even in such a shape, in the step of separating, for example, the interface between the first adhesive layer 150 and the second layer 151 or the interface between the second layer 151 and the susceptor 1 may be peeled off.

Further, in the third aspect of the invention, for example, the size of the first adhesive layer and the second layer may be larger than the size of the susceptor. Fig. 39 is a schematic cross-sectional view showing a state in which a wiring layer is formed on a bonding sheet of another embodiment and a semiconductor wafer is mounted. As shown in FIG. 39, the succeeding sheet 205 has the same size as the first adhesive layer 250 and the second layer 251, and has a smaller size than the susceptor 1 in plan view. Next, the sheet 205 is fixed to the susceptor 1 in such a manner that the second layer 251 is in contact with the susceptor 1. On the opposite side of the susceptor 1 of the bonding sheet 205, a wiring layer 2 is formed. On the wiring layer 2, a semiconductor wafer 3 is mounted. The wiring layer 2 is formed on the first adhesive layer 150 and the exposed portion of the susceptor 1. Even in such a shape, in the step of separating, for example, the interface between the first adhesive layer 250 and the second layer 251 or the interface between the second layer 251 and the susceptor 1 may be peeled off. Furthermore, in the example of FIG. 39, the case where the first adhesive layer 250 and the second layer 251 are the same size is entered. It is to be noted that the size of the first adhesive layer 250 may also be smaller than the size of the second layer 251. In this case, the wiring layer 2 may be formed on the first adhesive layer 250, the portion where the second layer 251 is exposed, and the portion where the susceptor 1 is exposed.

In the example shown in Fig. 39, the case where the wiring layer is formed also in the exposed portion of the susceptor 1 has been described. However, in the third aspect of the invention, even after the susceptor is exposed, even when the size of both the first adhesive layer and the second layer is smaller than the size of the pedestal, A wiring layer can be formed only on the succeeding film without forming a wiring layer in a portion where the pedestal is exposed.

The embodiment of the third invention has been described above.

<4th invention>

Hereinafter, the fourth aspect of the invention will be described with respect to the first aspect of the invention. In particular, the semiconductor device manufacturing method according to the fourth aspect of the present invention can exhibit the same characteristics and effects as those of the semiconductor device manufacturing method according to the first aspect of the present invention.

A method of manufacturing a semiconductor device according to a fourth aspect of the present invention is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and includes at least a sheet for temporarily fixing the substrate, and the sheet for temporary fixing And forming an adhesive layer between the material and the inclined portion of the end portion of the base to form an adhesive layer higher than the temporary fixing sheet, and fixing the temporary fixing sheet to the base; and fixing on the base a step of forming a wiring on the temporary fixing sheet; a step of attaching a workpiece to the wiring; and, after the mounting, separating the adhesive layer from the temporary fixing sheet, thereby attaching the workpiece with wiring from the above The step of separating the susceptor.

Hereinafter, each step of the embodiment of the fourth invention will be described with reference to the drawings. In addition, the "upper surface" and "lower surface" used in the fourth invention are used to describe the positional relationship of the layers, and the actual upper and lower postures of the temporary fixing sheet or the semiconductor device are used. There is no limit. Furthermore, in the following embodiments, In the case where the workpiece of the fourth invention is a semiconductor wafer, the invention is not limited to this example, and may be a wafer in which no circuit is formed, a wafer in which a circuit is formed, or a circuit in which no circuit is formed. The singulated wafer.

[Step of fixing the temporarily fixing sheet to the susceptor]

40 to 46 are schematic cross-sectional views for explaining the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 40 (a) is a view showing a state in which the temporary fixing sheet is fixed to the susceptor, and Fig. 40 (b) is a partially enlarged view thereof. First, as shown in Fig. 40 (a) and Fig. 40 (b), the temporary fixing sheet 5 is placed on the susceptor 1 and between the temporary fixing sheet 5 and the inclined portion 11 of the pedestal end portion. The adhesive sheet 5 having the adhesive force higher than the temporary fixing sheet 5 is formed to fix the temporary fixing sheet 5 to the susceptor 1. Specifically, for example, a method of first disposing the temporary fixing sheet 5 on the susceptor 1 and then applying a liquid adhesive between the temporary fixing sheet 5 and the inclined portion 11 of the pedestal end portion is exemplified. The composition is dried, and the like, thereby forming the adhesive layer 50 to fix the temporary fixing sheet 5 to the susceptor 1. In addition, the outer peripheral portion (the portion corresponding to the inclined portion 11) of the temporary fixing sheet 5 is provided with a sheet-like adhesive layer 50 in advance, and the temporary fixing sheet 5 is placed on the pedestal. In the case of 1 on, the adhesive layer 50 is attached to the inclined portion 11 of the susceptor 1, whereby the temporary fixing sheet 5 is fixed to the susceptor 1. In addition, a method of forming a liquid adhesive layer forming solution in advance (for example, spraying) the outer peripheral portion (portion corresponding to the inclined portion 11) of the temporary fixing sheet 5 is used, and the temporary fixing sheet is used. When disposed on the susceptor 1, the coated portion is disposed corresponding to the inclined portion 11 of the susceptor 1, and then cured to form the adhesive layer 50, whereby the temporary fixing sheet 5 is fixed to the base. The method on the seat 1.

In the present embodiment, as shown in Fig. 40 (b), the end portion of the temporary fixing sheet 5 is preferably located further inside than the end portion of the susceptor 1 and closer to the inclined starting position of the inclined portion of the susceptor 1. Outside. Specifically, the distance between the end portion of the susceptor 1 and the end portion of the temporary fixing sheet 5 in the lateral direction (the horizontal direction of the surface of the temporary fixing sheet) is D1 (see FIG. 40(b)). ,then D1 is preferably larger than one tenth of the circular radius D2 of the susceptor 1 (refer to FIG. 40(b)), that is, (D2)/10.

Further, D1 is preferably smaller than two-thirds of D2, that is, (D2) × (2/3). If D1 is larger than one tenth of D2, the temporary fixing sheet 5 can be prevented from coming into contact with other members (for example, a cassette for transporting) and rolled up. Further, if D1 is less than two-thirds of D2, the area of the succeeding portion generated by the adhesive layer 50 can be ensured to some extent, and then the reliability is excellent. Furthermore, the above D2 is usually 0.1 to 0.4 mm. When D1 is larger than (D2)/10, it is possible to suppress the occurrence of foreign matter by rubbing the adhesive layer during storage of the cassette.

[Steps for forming wiring]

Then, on the temporary fixing sheet 5, a wiring layer having a connecting conductor portion 21 and a wiring 26 connectable to the electrode 31 of the semiconductor wafer 3 is formed so that the connecting conductor portion 21 is exposed on the upper surface of the wiring layer 2. 2 (Refer to Figure 41). The wiring layer 2 has an external connection conductor portion 22 for electrically connecting to the outside on the side of the temporary fixing sheet 5. In addition, FIG. 41 shows a case where the connection conductor portion 21 is exposed to the upper surface of the wiring layer 2 in a convex shape. However, in the fourth aspect of the invention, the connection conductor portion may be exposed on the upper surface of the wiring layer, and the connection conductor may be used. The upper surface of the portion may be the same plane as the upper surface of the wiring layer.

[Steps for installing a semiconductor wafer]

Then, as shown in FIG. 42, the connection conductor portion 21 of the wiring layer 2 is connected to the electrode 31 of the semiconductor wafer 3, and the semiconductor wafer 3 is mounted on the wiring layer 2 (wiring 26). Fig. 42 shows the projections of the connecting conductor portion 21 and the electrode 31 after the mounting is omitted. In addition, FIG. 42 shows a case where a plurality of semiconductor wafers 3 are mounted on the wiring layer 2. However, the number of semiconductor wafers mounted on the wiring layer is not particularly limited and may be one.

Then, as shown in FIG. 43, resin sealing is performed by the resin 32 so as to cover the semiconductor wafer 3. The resin 32 for resin sealing can be suitably used by a conventionally known person or the like, and the resin sealing method can also employ a previously known method.

[Steps to separate from the base]

Then, the semiconductor wafer 3 with the wiring layer 2 sealed by the resin is separated from the susceptor 1 by separating the adhesive layer 50 from the temporary fixing sheet 5 (see FIG. 44). The fixing of the temporary fixing sheet 5 on the susceptor 1 is mainly performed by the adhesive layer 50 formed on the inclined portion 11 of the end portion of the susceptor, so that the adhesive layer 50 is separated from the temporary fixing sheet 5 Then, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 attached thereto can be easily separated up and down by an external force. The method of separating the adhesive layer 50 from the temporary fixing sheet 5 is a method of separating the adhesive layer 50 from the temporary fixing sheet 5 by dissolving the adhesive layer 50 in a solvent; 5, a method of physically cutting out a slit by a cutter or a laser to separate the adhesive layer 50 from the temporary fixing sheet 5, and forming an adhesive layer 50 by using a material whose adhesive force is lowered by heating in advance. A method of separating the adhesive layer 50 from the temporary fixing sheet 5 by heating to lower the adhesion force. In the present embodiment, since the adhesive layer 50 is formed on the inclined portion 11 of the end portion of the susceptor, it is easy to dissolve the adhesive layer 50 by the solvent or to physically fix the temporary fixing sheet 5 by a cutter or a laser. The slit is cut out to reduce the adhesion of the adhesive layer 50. Among these, it is preferable that the semiconductor wafer 3 with the wiring layer 2 attached is separated from the susceptor 1 by cutting the slits so that the adhesive layer 50 is separated from the temporary fixing sheet 5. This is because the slit can be cut out on the temporary fixing sheet 5, so that the semiconductor wafer 3 with the wiring layer 2 can be easily separated from the susceptor 1. When the slit is cut out on the adhesive layer 50, the slit may be cut out on the wiring layer 2 to the extent that the slit 26 is not cut out on the wiring 26 (refer to FIG. 41), but it is preferably as shown in FIG. A slit is cut into the temporary fixing sheet 5 so that the slit is not cut out on the wiring layer 2. The reason for this is that when the slit is cut in the temporary fixing sheet 5 so that the slit is not cut out in the wiring layer 2, the apparatus can be obtained in the same area as the area of the susceptor 1 in plan view (with a wiring layer). 2 semiconductor wafer 3). As a method of cutting a slit in the temporary fixing sheet 5 so that the slit is not cut out in the wiring layer 2, as shown in FIG. 45, only the temporary fixing sheet 5 is obliquely upward. A method of forming the slit 14 by using a cutter or a laser such as a cutter. Moreover, the following method may also be mentioned: from the lateral direction to the adhesive layer 50 A method of forming a slit by a cutter such as a cutter or a laser at the interface with the temporary fixing sheet 5.

Thereafter, the semiconductor device 4 on which the semiconductor wafer 3 is mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 46). Further, the wiring layer 2 from which the susceptor 1 is peeled off may be subjected to processing for imparting solder balls.

The outline of the method of manufacturing the semiconductor device of the present embodiment has been described above. Hereinafter, an example of a method of manufacturing a semiconductor device of the present embodiment will be described in detail.

[Step of fixing the temporarily fixing sheet to the susceptor]

First, the susceptor 1 is prepared (see Fig. 40 (a)). The susceptor 1 can be used as described in the item of the first invention.

Then, the temporary fixing sheet 5 is placed on the susceptor 1, and an adhesive layer 50 having an adhesive force higher than that of the temporary fixing sheet 5 is formed between the temporary fixing sheet 5 and the inclined portion 11 of the pedestal end portion. The temporary fixing sheet 5 is fixed to the susceptor 1 (see FIGS. 40(a) and 40(b)).

The adhesive composition constituting the adhesive layer 50 is not particularly limited as long as the adhesive force of the adhesive layer 50 is higher than the temporary fixing sheet 5 . The adhesive composition constituting the above-mentioned adhesive layer 50 is exemplified by a polyimine resin containing a constituent unit derived from a diamine having an oxime imine group and having at least a part of an ether structure, as the above polyimine resin. Polyacrylic acid, polyoxyxylene resin, thermoplastic resin and thermosetting resin of the former.

The above polyimine resin and the above polyoxyxylene resin can be used as described in the first aspect of the invention.

In the case where the above polyoxyxylene resin is used in the adhesive layer 50, other additives may be contained in the adhesive layer 50 as needed. As such other additives, those described in the item of the first invention can be used.

The composition constituting the temporary fixing sheet 5 is not particularly limited as long as the adhesive force of the temporary fixing sheet 5 is selected to be lower than the adhesive force of the adhesive layer 50. Examples of the material constituting the temporary fixing sheet 5 include inorganic materials such as Cu, Cr, Ni, and Ti.

Moreover, as the composition constituting the temporary fixing sheet 5, the above-mentioned polyimine resin which is described as an adhesive composition constituting the above-mentioned adhesive layer 50 may be used, and it may be used as the above-mentioned polyimine resin. As the polyamic acid of the precursor, the above polyoxyl resin may be used, and the above thermoplastic resin and the above thermosetting resin may be used in combination.

(Manufacture of temporary fixing sheets)

The temporary fixing sheet 5 is produced, for example, in the following manner. First, a solution containing a composition for forming the temporary fixing sheet 5 is produced. Then, the coating solution is applied onto a substrate to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions. As the substrate, SUS304, 6-4 alloy, metal foil such as aluminum foil, copper foil, or Ni foil; polyethylene terephthalate (PET), polyethylene, polypropylene; or fluorine-based release agent can be used. A plastic film or paper surface-coated with a release agent such as a long-chain alkyl acrylate release agent. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and spin coating. Thereby, the temporary fixing sheet 5 of this embodiment is obtained.

[Formation of wiring layer]

Then, the wiring layer 2 is formed on the temporary fixing sheet 5 of the susceptor 1 (see FIG. 41). A method of forming a wiring layer on a susceptor having a temporary fixing sheet can be carried out by the method described in the first aspect of the invention.

[Installation step, stripping step, dicing]

Then, the wiring layer 2 (attached to be detachable from the susceptor 1) obtained in the above is mounted (see FIG. 42). Thereafter, the wiring layer 2 is aged, and further, each of the wafers 3 on the wiring layer 2 is resin-sealed as needed (see FIG. 43). Furthermore, the resin seal can be A liquid resin sealing material can also be used as the sheet-like sealing resin sheet. Thereafter, the resin-sealed semiconductor wafer 3 with the wiring layer 2 is separated from the susceptor 1 (see FIG. 44). Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. Thereafter, the semiconductor device 4 on which the semiconductor wafer 3 is mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 46). Further, when a wafer (flip-chip connection) is mounted on the wiring layer 2, a resin for filling the underlayer may be used between the wiring layer 2 and the wafer. The resin for filling the primer may be in the form of a sheet or a liquid. Further, in the above-described embodiment, the case where the resin is sealed after the wafer is mounted has been described. However, a conventionally known film for flip chip type semiconductor back surface may be formed on the wafer instead of the resin sealing. The film for flip chip type semiconductor back surface is used for forming a film on a back surface of a wafer (semiconductor element) to which a flip chip is attached to a substrate, and is described in, for example, Japanese Patent Laid-Open No. 2011-249739. The disclosure is omitted, and the description herein is omitted.

In the above embodiment, the case where the adhesive layer is formed only on the inclined portion of the susceptor has been described. However, the fourth aspect of the invention is not limited to this example, and an adhesive layer may be formed from the inclined portion and the inner side (the center side of the susceptor).

Fig. 47 is a schematic cross-sectional view showing the outline of a method of manufacturing a semiconductor device according to another embodiment. In the other embodiment described with reference to Fig. 47, the steps of fixing the temporary fixing sheet to the susceptor and the step of separating from the susceptor are substantially the same as those of the above-described embodiment, and therefore the description thereof will be omitted. The step of fixing the temporarily fixing sheet to the susceptor and the step of separating from the pedestal will be described.

[Step of fixing the temporarily fixing sheet to the susceptor]

As shown in Fig. 47, the temporary fixing sheet 105 has a concave portion 105a in the outer peripheral portion (the inclined portion of the base and the portion further inside than the inclined portion). In the present embodiment, first, as shown in FIG. 47, the temporary fixing sheet 105 is placed on the susceptor 1, and the portion of the inclined portion 11 and the recessed portion 105a of the pedestal end portion is formed to have a higher adhesion force than the temporary fixing piece. material The adhesive layer 105 of 105 is used to fix the temporary fixing sheet 105 to the susceptor 1. Specifically, for example, a method in which the temporary fixing sheet 105 having the concave portion 105a is placed on the susceptor 1 and then the liquid adhesive composition is applied to the inclined portion 11 and the concave portion 105a and dried is applied. The method of forming the adhesive layer 150 to fix the temporary fixing sheet 105 to the susceptor 1 is formed. Further, a method of providing a sheet for temporary fixing to a portion corresponding to the portion corresponding to the inclined portion 11 and the portion of the concave portion 105a of the temporary fixing sheet 105 having the concave portion 105a is provided in advance. When the 105 is placed on the susceptor 1, the adhesive layer 150 is attached so as to include the inclined portion 11 of the susceptor 1, thereby fixing the temporary fixing sheet 105 to the susceptor 1. In addition, a method of forming a liquid adhesive layer forming solution in advance (for example, spraying) a portion of the temporary fixing sheet 105 corresponding to the inclined portion 11 and a portion corresponding to the concave portion 105a is exemplified. When the 105 is placed on the susceptor 1, the coated portion is disposed so as to include the inclined portion 11 of the susceptor 1, and then cured to form the adhesive layer 150, whereby the temporary fixing sheet 105 is fixed to the base. The method on the seat 1. In the present embodiment, as shown in Fig. 47, the end portion of the temporary fixing sheet 105 coincides with the end portion of the susceptor 1. However, in the fourth aspect of the invention, the end portion of the temporary fixing sheet is not limited to this example, and the temporary fixing sheet may be fixed to the susceptor by the adhesive layer, or may be a self-base. The end of the end is a certain distance (for example, 10 mm).

[Steps to separate from the base]

In the step of separating from the susceptor, the resin-sealed semiconductor wafer 3 with the wiring layer 2 is separated from the susceptor 1 by separating the adhesive layer 150 from the temporary fixing sheet 105. The fixing of the temporary fixing sheet 105 on the susceptor 1 is mainly performed by the slanting portion 11 and the inclined portion 11 from the end portion of the pedestal and the adhesive layer 150 formed on the inner side, so that if the adhesive layer 150 is used When the temporary fixing sheet 105 is separated, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 can be easily separated up and down by an external force. As a method of separating the adhesive layer 150 from the temporary fixing sheet 105, a solvent-dissolving adhesive is used. In the layer 150, the adhesive layer 150 is separated from the temporary fixing sheet 105; the temporary fixing sheet 105 is physically cut by a cutter or a laser to cut the adhesive layer 150 from the temporary fixing. A method of separating the sheet 105; a method of forming the adhesive layer 150 by using a material whose adhesion is lowered by heating, and a method of separating the adhesive layer 150 from the temporary fixing sheet 105 by heating to lower the bonding force. In the present embodiment, since the adhesive layer 150 is formed from the inclined portion 11 of the base end portion and further inside, it is preferable to cut the slit 165 from the side of the semiconductor wafer 3 until reaching the succeeding sheet 105 as shown in Fig. 47. until. At this time, the slits are also cut out simultaneously on the resin 32 and the wiring layer 2. Further, similarly to the above-described embodiment, it is also possible to prevent the slit from being cut out from the temporary fixing sheet 105 from the obliquely upward direction without cutting the slit in the wiring layer 2. Thereby, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 are opposed to each other only via the temporary fixing sheet 105. Thereafter, an external force is applied, thereby separating the susceptor 1 from the semiconductor wafer 3 with the wiring layer 2 up and down. At this time, the susceptor 1 and the semiconductor wafer 3 with the wiring layer 2 are opposed to each other via the temporary fixing sheet 105 having a relatively low adhesion force, so that the susceptor 1 and the wiring layer 2 can be attached by an external force. The semiconductor wafer 3 is easily separated up and down. As a method of forming the slit, a conventionally known method or the like can be employed, and a cutter such as a cutter or a high-energy line generated by a laser or the like can be used.

In the above-described embodiment, the temporary fixing sheet 105 having the concave portion 105a is used in the outer peripheral portion (the portion which is more inward than the inclined portion of the base and the inclined portion), as shown in Fig. 47, The slits 165 are cut out from the semiconductor wafer 3 side until reaching the succeeding sheet 105, whereby the adhesive layer 150 is separated from the temporary fixing sheet 105. However, the fourth invention is not limited to this example, and may be used for a temporary fixing sheet (for example, the temporary fixing sheet 5 shown in Fig. 40 (a)) having no concave portion in the outer peripheral portion. The slit was cut out sideways until the sheet was reached, and the adhesive layer was separated from the sheet for temporary fixing.

The embodiment of the fourth invention has been described above.

<5th invention>

Hereinafter, the fifth invention will be described with respect to differences from the first invention. In particular, the manufacturing method and the bonding sheet of the semiconductor device according to the fifth aspect of the present invention are the same as the manufacturing method and the bonding sheet of the semiconductor device according to the first aspect of the invention. Characteristics and effects.

A method of manufacturing a semiconductor device according to a fifth aspect of the present invention is a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and at least includes a step of preparing a bonding sheet having a first adhesive layer and having a plurality of through-hole structures and/or a non-woven structure as a second layer of the skeleton, and an adhesion force of the second layer after being attached to the susceptor is lower than an adhesion force of the first adhesive layer; a step of bonding the sheet to the susceptor; a step of forming a wiring on the bonding sheet after being attached to the pedestal; a step of mounting the workpiece on the wiring; and a workpiece having the wiring attached after the mounting The step of separating the susceptor.

Hereinafter, each step of an embodiment of the fifth invention will be described with reference to the drawings. In addition, the "upper surface" and "lower surface" used in the fifth invention are used to indicate the positional relationship of the layers, and the actual upper and lower postures of the adhesive sheet or the semiconductor device are not limited. . Furthermore, in the following embodiments, the case where the workpiece of the fifth invention is a semiconductor wafer will be described. However, the present invention is not limited to this example, and may be a wafer in which no circuit is formed, or may be formed with a circuit. The wafer may also be a singulated wafer that is not formed with a circuit.

[Steps to prepare the next film]

First, an adhesive sheet having a first adhesive layer and a second layer having a plurality of through-hole structures and/or a nonwoven fabric-like structure as a skeleton and attached to the susceptor The adhesion of the second layer is lower than the adhesion of the first adhesive layer.

Here, the succeeding film of this embodiment will be described.

[First Embodiment]

Fig. 48 is a cross-sectional schematic view showing a sheet of the first embodiment of the fifth invention. As shown in FIG. 48, the succeeding sheet 5 is formed by the first adhesive layer 50, and the central portion 53 further inside the peripheral portion 54 is composed of the first adhesive layer 50 and a structure having a plurality of through holes. And/or a non-woven fabric structure is formed as a laminate of the second layer 51 of the skeleton. That is, the succeeding sheet 5 has the second layer 51 and the first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51. The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Further, in the step of bonding the bonding sheet 5 to the susceptor, the surface on the side where the second layer 51 is exposed is bonded to the susceptor as a bonding surface.

In the subsequent sheet 5, since the first adhesive layer 50 having a higher adhesion force than the second layer 51 is present in the peripheral portion, the portion can be firmly bonded to the susceptor and the wiring. Moreover, not only the first adhesive layer 50 but also the second layer having a lower adhesive force than the first adhesive layer can be used. Therefore, when the adhesion of the first adhesive layer 50 is lowered in the step of separation described later, The susceptor and the semiconductor wafer with wiring are easily separated up and down by an external force.

Moreover, the succeeding sheet 5 can securely fix the wiring formed on the adhesive sheet 50 by the surface on which only the first adhesive layer 50 is exposed. Further, the central portion 53 is formed by laminating the first adhesive layer 50 and the second layer 51. Therefore, the adhesion force of the central portion 53 formed by laminating the first adhesive layer 50 and the second layer 51 is relatively lower than that of the peripheral portion 54 formed only by the first adhesive layer 50. Therefore, if at least the adhesion of the peripheral portion 54 is lowered, the susceptor and the wiring-attached semiconductor wafer can be easily separated up and down by an external force. Further, since the second layer 51 is also in contact with the susceptor, the step 5 is easily peeled off from the susceptor after the step of separating. Therefore, the susceptor is easily recovered. Further, since the first adhesive layer 50 is formed on the peripheral portion 54 of the adhesive sheet 5, it is easy to dissolve the first adhesive layer 50 by a solvent or use a physical property such as a cutter or a laser in the step of separation described later. The slit is cut out to lower the adhesion of the first adhesive layer 50.

The thickness of the sheet 5 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. When it is 10 μm or more, the unevenness of the surface of the susceptor or the surface of the wiring can be followed, and the adhesive sheet can be filled without any gap. Further, the thickness of the succeeding sheet 5 is, for example, 500 μm or less, preferably. It is 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage during heating can be suppressed or prevented.

The thickness of the first adhesive layer 50 of the central portion 53 can be appropriately set, and is preferably 0.1 μm or more, more preferably 0.5 μm or more, and still more preferably 1 μm or more. Further, the thickness is preferably 300 μm or less, more preferably 200 μm or less. Further, the thickness of the second layer 51 of the central portion 53 can be appropriately set.

Figure 49 is a plan view of the adhesive sheet shown in Figure 48. As shown in Fig. 49, the shape of the succeeding sheet 5 in a plan view is circular. The diameter of the sheet 5 is not particularly limited. For example, the diameter of the sheet 5 is preferably +1.0 to -1.0 mm with respect to the diameter of the susceptor.

Further, when the succeeding sheet 5 is viewed in plan, the shape of the second layer 51 is circular. The area of the second layer 51 in the plan view of the sheet 5 is preferably 10% or more, more preferably 20% or more, and still more preferably 50% or more with respect to the area of the sheet 5 when the sheet 5 is viewed from above. When it is 10% or more, it is easy to cut the first adhesive layer 50 formed on the peripheral portion 54, or to lower the adhesion, and it is easy to separate the susceptor from the semiconductor wafer to which the wiring is attached. Further, the area of the second layer 51 is preferably 99.95% or less, more preferably 99.9% or less. If it is 99.95% or less, the semiconductor wafer with wiring can be firmly fixed to the susceptor.

The 90° peeling peeling force for the tantalum wafer under the conditions of the adhesion force of the first adhesive layer 50, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, is preferably 0.30 N/20 mm or more, more preferably 0.40N/20mm or more. If it is 0.30 N/20 mm or more, the susceptor and the adhesive sheet 5 can be fixed more firmly. Further, the upper limit of the 90° peeling peeling force is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

The adhesive composition constituting the first adhesive layer 50 is not particularly limited, and a polyimine resin containing a constituent unit derived from a diamine having an oxime imine group and having at least a part of an ether structure can be preferably used. . Further, a polyoxynoxy resin can also be preferably used. Among them, the above-mentioned polyimine resin is preferred in terms of heat resistance, drug resistance, and paste residue.

The above polyimine resin and the above polyoxyxylene resin can be used as described in the first aspect of the invention.

The adhesive composition constituting the first adhesive layer 50 may also contain other additives. As such other additives, those described in the item of the first invention can be used.

The second layer 51 has a structure 57 having a plurality of through holes 56 and/or a non-woven structure as a skeleton. Fig. 50 is a plan view showing an example of a structure having a plurality of through holes. As shown in FIG. 50, the through hole 56 penetrates in the thickness direction of the structure 57 (may also be referred to as the thickness direction of the back sheet 5).

The adhesion of the second layer 51 can be adjusted by adjusting the opening ratio of the structure 57 having the plurality of through holes 56. Specifically, when the through hole 56 is filled by the following adhesive composition, the adhesion can be increased by increasing the opening ratio, and the adhesion can be reduced by reducing the aperture ratio.

The opening ratio of the structure 57 is preferably 5% or more, more preferably 8% or more, still more preferably 10% or more. When it is 5% or more, the adhesive composition filled in the through-hole 56 reaches the to-be-attached body, and the adhesive force of the 2nd layer 51 can be adjusted.

Further, the opening ratio is preferably 98% or less, more preferably 95% or less, still more preferably 90% or less. When it is 98% or less, even when the same adhesive composition as the first adhesive layer 50 is filled in the through hole 56, the second layer 51 can be lowered as compared with the first adhesive layer 50. Then force.

In the structure 57, the shape of the through hole 56 (the shape of the through hole 56 when the sheet 5 is viewed in plan view) is not particularly limited, and examples thereof include a circular shape, a circular shape, and a polygonal shape. The shapes of the through holes 56 may all be the same or different.

When the sheet 5 is viewed in plan, the size (area) of one through hole 56 is preferably 70 μm ² or more, and more preferably 100 μm ² or more. Further, it is preferably 20 mm ² or less, more preferably 7 mm ² or less. Furthermore, the size of the through holes 56 may be the same or different.

The structure 57 having the plurality of through holes 56 and the material of the non-woven structure are not particularly Do not limit. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene Polyolefin such as polymethylpentene; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate; polycarbonate, polyimine, Polyetheretherketone, polyimide resin, polyetherimide, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, Polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyxylene resin, paper, and the like. Further, metal materials such as iron, copper, nickel, tungsten, aluminum, gold, silver, copper, brass, red brass, phosphor bronze, nickel-chromium alloy, nickel-copper alloy, bronze, and stainless steel (SUS) may be mentioned. These may be used alone or in combination of two or more. In the case of the structure 57 having a plurality of through holes 56, in terms of heat resistance, a metal material, the above polyimine resin, and the above polyoxyxylene resin are more preferable, and SUS is preferable. aluminum. In the case of a non-woven fabric structure, the polyimine resin, the polyfluorene oxide resin, and the metal material are preferable in terms of heat resistance and contamination.

The lower the adhesion force between the structure 57 having the plurality of through holes 56 and the nonwoven fabric structure, the better. For example, the 90° peeling peeling force for the silicon wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably less than 0.30 N/20 mm, more preferably 0.20 N/20 mm or less, and further preferably 0.10N/20mm or less. If it is less than 0.30 N/20 mm, the second layer 51 can be easily peeled off. The lower limit of the 90° peeling peeling force is, for example, 0 N/20 mm or more and 0.001 N/20 mm or more.

In addition, when the structure 57 and the nonwoven fabric structure having the plurality of through holes 56 are followed by yttrium imidation or heat curing, the 90° peeling peeling force is fixed to the crucible. The peeling force is peeled off at 90° on the wafer (for example, after yttrium or after thermal hardening). Specifically, the measurement can be carried out by the method described in the examples.

The through holes 56 and the plurality of holes of the nonwoven fabric structure may be filled with the adhesive composition or may not be filled. It is preferable to perform filling in terms of easily controlling the second layer having a low adhesion force by controlling the aperture ratio of the structure 57 or the density of the non-woven structure.

The adhesive composition for filling the through holes 56 or the plurality of holes of the nonwoven fabric is not particularly limited, and examples thereof include the above-mentioned polyimine resin and the above-mentioned polyoxymethylene resin.

The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Regarding the adhesion force of the second layer 51, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the tantalum wafer is preferably less than 0.30 N/20 mm, more preferably 0.20. N/20mm or less. If it is less than 0.30 N/20 mm, the second layer 51 can be easily peeled off. The lower limit of the 90° peeling peeling force is preferably as low as possible, but is preferably 0 N/20 mm or more, more preferably 0.001 N/20 mm or more, further preferably 0.01 N/20 mm or more, and particularly preferably 0.10 N/20 mm or more. .

The adhesion of the second layer 51 can be based on the aperture ratio of the structure 57 or the density of the non-woven structure, the type of the adhesive composition filled in the through holes 56 or the plurality of holes of the nonwoven fabric, the material of the structure 57, and the like. Adjust it.

The method of manufacturing the sheet 5 is not particularly limited. For example, it can be manufactured by coating a structure including a plurality of through holes 56 and a periphery thereof (a region around the structure 57) with a solution containing a composition for forming the first adhesive layer 50, using The solution fills the through hole 56 and forms a coating layer on the structure 57 and around the structure 57. In this method, the coating layer formed around the structure 57 becomes the first adhesive layer 50 of the peripheral portion 54.

In the case where the second layer 51 has a nonwoven fabric structure as a skeleton, it can be produced by applying a composition for forming the first adhesive layer 50 to the nonwoven fabric structure and the periphery thereof. The solution fills a plurality of pores of the nonwoven fabric structure with the above solution and forms a coating layer on the structure and around the structure. In this method, the structure The coating layer formed around the periphery becomes the first adhesive layer 50 of the peripheral portion 54.

The viscosity of the applied solution can be appropriately set. The coating amount may be appropriately set.

[Second Embodiment]

The adhesive sheet of the fifth invention is not limited to the shape of the adhesive sheet 5. Figure 51 is a cross-sectional schematic view showing a sheet of a second embodiment of the fifth invention. Figure 52 is a plan view of the film shown in Figure 51. As shown in FIGS. 51 and 52, the succeeding sheet 6 is formed by the first adhesive layer 60, and the central portion 63 which is further inside than the peripheral portion 64 is formed by a structure having a plurality of through holes 66. The second layer 61 is formed. The adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60.

Further, the second layer 61 may be a non-woven fabric structure as a skeleton.

In the subsequent sheet 6, since the center portion 63 is formed by the second layer 61, if the adhesion force of the first adhesive layer 60 existing on the peripheral portion 64 is lowered in the step of separation described later, external force can be used. The susceptor and the semiconductor wafer with wiring are easily separated up and down.

Further, since the center portion 63 is formed by the second layer 61, and the second layer 61 is also in contact with the susceptor, the step 6 is separated from the susceptor after the separation step. Therefore, the susceptor is easily recovered. Further, since the first adhesive layer 60 is formed on the peripheral portion 64 of the adhesive sheet 6, it is easy to dissolve the first adhesive layer 60 by a solvent or to use a physical property such as a cutter or a laser in the step of separation described later. The slit is cut to reduce the adhesion of the first adhesive layer 60.

The thickness of the sheet 6 is not particularly limited, and examples thereof include those exemplified in the sheet 5 of the first embodiment.

As shown in Fig. 52, the shape of the succeeding sheet 6 in a plan view is circular. The diameter of the sheet 6 is not particularly limited, and examples thereof include those exemplified in the sheet 5 of the first embodiment. Moreover, the area of the second layer 61 when the sheet 6 is viewed in plan is not particularly limited, and examples thereof include those exemplified in the sheet 5 of the first embodiment.

The adhesive force of the first adhesive layer 60 is exemplified as the first adhesive layer 50. The description of the first adhesive layer 60 is the same as that of the first adhesive layer 50.

The adhesive force of the second layer 61 is exemplified as the second layer 51. The description of the second layer 61 is the same as that of the second layer 51.

The method of manufacturing the sheet 6 is not particularly limited. For example, it can be manufactured by coating a structure including a plurality of through holes 66 and its surroundings (a region around the structure) with a solution containing a composition for forming the first adhesive layer 60, using the above solution. The through hole 66 is filled and a coating layer is formed around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 60 of the peripheral portion 64.

In the case where the second layer 61 has a nonwoven fabric structure as a skeleton, it can be produced by applying a composition for forming the first adhesive layer 60 to the nonwoven fabric structure and the periphery thereof. The solution is filled with a plurality of pores of the nonwoven fabric structure using the above solution and a coating layer is formed around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 60 of the peripheral portion 64.

The viscosity of the applied solution can be appropriately set. The coating amount may be appropriately set.

[Third embodiment]

The succeeding film of the fifth invention is not limited to the shape of the succeeding sheets 5 and 6. Figure 53 is a cross-sectional schematic view showing a sheet of a third embodiment of the fifth invention. As shown in FIG. 53, the adhesive sheet 7 is formed by laminating the first adhesive layer 70 and the second layer 71 having a plurality of through-hole structures and/or a nonwoven structure as a skeleton. The adhesion of the second layer 71 is lower than the adhesion of the first adhesive layer 70.

In the subsequent sheet 7, since the first adhesive layer 70 is present, wiring or the like can be fixed to the susceptor in advance in the step of forming wiring or the step of mounting the workpiece. Further, not only the first adhesive layer 70 but also the second layer 71 having a lower adhesive force than the first adhesive layer 70 is provided, so that the susceptor and the wiring-attached workpiece can be externally pressed in the separating step. Easily separate up and down. Further, since the succeeding sheet 7 is bonded to the susceptor by using the second layer 71 as a bonding surface, wiring is formed on the first adhesive layer 70. Therefore, in the step of forming the wiring or the step of mounting the workpiece, the wiring or the like can be fixed to the susceptor more firmly in advance.

The thickness of the first adhesive layer 70 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. When it is 10 μm or more, the unevenness of the surface of the susceptor or the surface of the wiring can be followed, and the adhesive sheet 7 can be filled without any gap. Further, the thickness of the first adhesive layer 70 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage during heating can be suppressed or prevented.

The thickness of the second layer 71 is not particularly limited, and is, for example, 1 μm or more, and preferably 5 μm or more. When it is 1 μm or more, the unevenness of the surface of the susceptor or the surface of the wiring can be followed, and the adhesive sheet 7 can be filled without a gap. Further, the thickness of the second layer 71 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage during heating can be suppressed or prevented.

Further, the shape when the sheet 7 is viewed in plan is not particularly limited, and is generally circular.

The adhesive force of the first adhesive layer 70 is exemplified as the first adhesive layer 50. The description of the first adhesive layer 70 is the same as that of the first adhesive layer 50.

Regarding the adhesion force of the second layer 71, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the silicon wafer is preferably less than 0.30 N/20 mm, more preferably 0.20. N/20mm or less. If it is less than 0.30 N/20 mm, the susceptor can be easily separated from the semiconductor wafer. On the other hand, the lower limit of the 90° peeling peeling force is preferably 0.001 N/20 mm or more, more preferably 0.005 N/20 mm or more, still more preferably 0.010 N/20 mm or more. When it is 0.001 N/20 mm or more, the semiconductor wafer can be favorably fixed to the susceptor, and back surface polishing or the like can be satisfactorily performed.

The description of the second layer 71 is the same as that of the second layer 51.

The method of manufacturing the sheet 7 is not particularly limited. For example, it can be manufactured by applying a solution containing a composition for forming the first adhesive layer 70 to a structure having a plurality of through holes, filling the through holes with the above solution, and forming a coating on the structure. Floor.

Further, when the second layer 71 has a non-woven fabric structure as a skeleton, it can be produced by coating a non-woven fabric structure to form a first adhesive layer. A solution of the composition of 70 is filled with a plurality of pores of the nonwoven fabric structure using the above solution and a coating layer is formed on the structure.

The viscosity of the applied solution can be appropriately set. The coating amount may be appropriately set.

In the above description, the back sheets 5 to 7 having a circular shape in plan view have been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or a circular shape.

Moreover, the back sheets 5 to 7 in which the shapes of the second layers 51, 61, and 71 are circular in plan view have been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or a circular shape.

[Steps to fit on the base]

In the following description, the case where the back sheet 5 shown in Fig. 48 is used will be described. 54 to 59 are schematic cross-sectional views for explaining the outline of a method of manufacturing a semiconductor device according to an embodiment of the present invention. After the preparation of the next sheet 5 step, the prepared back sheet 5 is bonded to the susceptor 1 with the lower surface of the succeeding sheet 5 as a bonding surface (see FIG. 54). The bonding method is not particularly limited, and a method using pressure bonding is preferred. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are preferably 20 ° C to 150 ° C, 0.01 MPa to 10 MPa, and 1 mm / sec to 100 mm / sec. As described above, since the adhesive sheet 5 is exposed on the lower surface of the first adhesive layer 50 having a higher adhesive force than the second layer 51, it can be firmly bonded to the susceptor 1.

[Steps for forming wiring]

Then, on the bonding sheet 5, the wiring layer 2 having the connection conductor portion 21 and the wiring 26 that can be connected to the electrode 31 of the semiconductor wafer 3 is formed so that the connection conductor portion 21 is exposed on the upper surface of the wiring layer 2 (refer to Figure 55). The wiring layer 2 has an external connection conductor portion 22 for electrically connecting to the outside on the side of the back sheet 5. In addition, FIG. 55 shows a case where the connecting conductor portion 21 is exposed to the upper surface of the wiring layer 2 in a convex shape. However, in the fifth aspect of the invention, the connecting conductor portion may be exposed on the upper surface of the wiring layer, and the connecting conductor may be used. Upper surface It can also be in the same plane as the upper surface of the wiring layer. In the subsequent sheet 5, since only the first adhesive layer 50 is exposed on the upper surface, the wiring layer formed on the adhesive sheet 50 can be more firmly fixed.

[Steps for installing a semiconductor wafer]

Then, as shown in FIG. 56, the connection conductor portion 21 of the wiring layer 2 is connected to the electrode 31 of the semiconductor wafer 3, and the semiconductor wafer 3 is mounted on the wiring layer 2 (wiring 26). Fig. 56 is a view showing the projections of the connecting conductor portion 21 and the electrode 31 after the mounting is omitted. In addition, FIG. 56 shows a case where a plurality of semiconductor wafers 3 are mounted on the wiring layer 2. However, the number of semiconductor wafers mounted on the wiring layer is not particularly limited, and may be one.

Then, as shown in FIG. 57, resin sealing is performed by the resin 32 so as to cover the semiconductor wafer 3 as needed. The resin 32 for resin sealing can be suitably used by a conventionally known person or the like, and the resin sealing method can also employ a previously known method.

[Steps to separate from the base]

Then, as shown in FIG. 58, the semiconductor wafer 3 with the wiring layer 2 sealed by the resin is separated from the susceptor 1. Specifically, the susceptor 1 and the back sheet 5 are peeled off together with the surface of the back sheet 5 on the side opposite to the susceptor 1 as an interface. Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. As described above, the adhesive sheet 5 has not only the first adhesive layer 50 but also the second layer 51 having a lower adhesive force than the first adhesive layer 50. Therefore, if the adhesion of the first adhesive layer 50 is lowered, the adhesive sheet can be borrowed. The susceptor and the semiconductor wafer with the wiring layer are easily separated up and down by an external force.

Further, the central portion 53 is formed by laminating the first adhesive layer 50 and the second layer 51. Therefore, the adhesion force of the central portion 53 formed by laminating the first adhesive layer 50 and the second layer 51 is relatively lower than that of the peripheral portion 54 formed only by the first adhesive layer 50. Therefore, if at least the adhesion of the peripheral portion 54 is lowered, the susceptor and the semiconductor wafer with the wiring layer can be easily separated up and down by an external force. Further, since the first adhesive layer 50 is formed on the peripheral portion 54 of the adhesive sheet 5, it is easy to dissolve the first adhesive layer 50 by a solvent or use a physical property such as a cutter or a laser in the step of separation described later. Cut the incision and lower the first one The adhesion of the agent layer 50. As a method of lowering the adhesion force of the first adhesive layer 50, a method of reducing the adhesion force by dissolving the first adhesive layer 50 in a solvent is used, and the first adhesive layer 50 is physically used by a cutter or a laser. A method of cutting out the slit to reduce the adhesion force; a method of forming the first adhesive layer 50 by using a material whose adhesion is lowered by heating is used in advance, and a method of lowering the force by heating is used.

Thereafter, the semiconductor device 4 on which the semiconductor wafer 3 is mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 59). Further, the wiring layer 2 from which the susceptor 1 is peeled off may be subjected to processing for imparting solder balls.

The outline of the method of manufacturing the semiconductor device of the present embodiment has been described above. Hereinafter, an example of a method of manufacturing a semiconductor device of the present embodiment will be described in detail.

[Preparation of the pedestal with the film]

First, the susceptor 1 is prepared (refer to FIG. 54). The susceptor 1 can be used as described in the item of the first invention.

[Steps to fit on the base]

Then, the bonding sheet 5 is bonded to the susceptor 1 (see FIG. 54). Next, the sheet 5 has a second layer 51 and a first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51 as described above. In this step, the adhesive sheet 5 is bonded to the susceptor 1 with the lower surface of the adhesive sheet 5 as a bonding surface.

[Formation of wiring layer]

Then, the wiring layer 2 is formed on the bonding sheet 5 of the susceptor 1 (see FIG. 55). The method of forming the wiring layer on the susceptor having the succeeding film can employ the method described in the first aspect of the invention.

[Installation step, stripping step, dicing]

Then, the wiring layer 2 obtained in the above (attached so as to be detachable from the susceptor 1) is mounted (see FIG. 55). Thereafter, the wiring layer 2 is aged, and further, as needed Each of the wafers 3 on the wiring layer 2 is subjected to resin sealing (see FIG. 57). Further, as the resin sealing, a sheet-like sealing resin sheet can be used, and a liquid resin sealing material can also be used. Thereafter, the semiconductor wafer 3 with the wiring layer 2 sealed by the resin is separated from the susceptor 1 (refer to FIG. 58). Further, when the resin is not sealed, the semiconductor wafer 3 with the wiring layer 2 not sealed with the resin is separated from the susceptor 1. Thereafter, the semiconductor device 4 on which the semiconductor wafer 3 is mounted on the wiring layer 2 is obtained by trimming as necessary (see FIG. 59). Further, when a wafer (flip-chip connection) is mounted on the wiring layer 2, a resin for filling the underlayer may be used between the wiring layer 2 and the wafer. The resin for filling the primer may be in the form of a sheet or a liquid. Further, in the above-described embodiment, the case where the resin is sealed after the wafer is mounted has been described. However, a conventionally known film for flip chip type semiconductor back surface may be formed on the wafer instead of the resin sealing. The film for flip chip type semiconductor back surface is used for forming a film on a back surface of a wafer (semiconductor element) to which a flip chip is attached to a substrate, and is described in, for example, Japanese Patent Laid-Open No. 2011-249739. The disclosure is omitted, and the description herein is omitted.

In the above description, as a method of forming wiring using the adhesive sheet 5, the surface on which the first adhesive layer 50 and the second layer 51 of the adhesive sheet 5 are exposed is attached to the susceptor 1, and only the sheet 5 is attached. The case where wiring is formed on the exposed surface of the adhesive layer 50 has been described. However, the method of forming the wiring using the adhesive sheet 5 is not particularly limited, and the surface on which only the first adhesive layer 50 of the adhesive sheet 5 is exposed may be attached to the susceptor 1 and the first adhesive layer of the adhesive sheet 5 may be applied. Wiring is formed on the exposed surface of 50 and the second layer 51.

In the above description, the method of forming the wiring using the adhesive sheet 5 has been described. However, even if the adhesive sheet 6 or the adhesive sheet 7 is used, the wiring can be formed in the same manner as in the case of using the adhesive sheet 5.

The embodiment of the fifth invention has been described above.

In the embodiment of the first to fifth inventions described above, the case where the wiring is formed as a wiring layer has been described. However, the wiring in the first to fifth inventions is not Limited to this example. The wiring of the first to fifth inventions may not be formed as a wiring layer, and for example, wiring may be formed on the bonding sheet by a single body.

The method of manufacturing a semiconductor device according to the first to third inventions and the fifth aspect of the invention includes forming a wiring on a susceptor having a bonding sheet (for example, a pedestal of a strip), and mounting a plurality of workpieces on the wiring A resin sealing method is then carried out, followed by cutting to obtain a plurality of semiconductor devices. According to the method of manufacturing a semiconductor device, wiring for a plurality of semiconductor devices can be formed on one susceptor. Further, the method of manufacturing a semiconductor device according to the first to third aspects of the present invention and the fifth aspect of the invention includes forming a wiring on a susceptor having a bonding sheet, and attaching one workpiece to the wiring to perform resin sealing. Thereby, a method of obtaining one semiconductor device is obtained.

A method of manufacturing a semiconductor device according to a fourth aspect of the present invention, comprising: forming a wiring on a base (for example, a long base) on which a temporary fixing sheet is fixed, mounting a plurality of workpieces on the wiring, and performing resin sealing, and thereafter A method of trimming to obtain a plurality of semiconductor devices. According to the method of manufacturing a semiconductor device, wiring for a plurality of semiconductor devices can be formed on one susceptor. Further, in the method of manufacturing a semiconductor device according to the fourth aspect of the present invention, the wiring is formed on the susceptor on which the temporary fixing sheet is fixed, and one workpiece is attached to the wiring and resin-sealed to obtain one semiconductor device. The method.

In the above, the method of manufacturing the semiconductor device according to the first to fifth aspects of the present invention is described, but the method of manufacturing the semiconductor device according to the first to fifth inventions is not limited to the above example, and The scope of the first to fifth inventions is appropriately changed within the scope of the gist of the invention.

[Examples]

Hereinafter, the present invention will be described in detail by way of examples, but the invention should not be construed as limited to

[First invention]

The following embodiments and the like correspond to the first invention.

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

(Example 1) <Preparation of Solution for First Adhesive Layer and Solution for Second Layer>

Polyether diamine (D-4000) 267.75 g, 4,4'-diamino group was mixed at 70 ° C in N,N-dimethylacetamide (DMAc) 1.041 g under a nitrogen stream. 78.48 g of diphenyl ether (DDE) and 100 g of pyromellitic dianhydride (PMDA) were reacted to obtain a solution for the first adhesive layer (polyglycine solution A). The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer (polyglycine solution B) was obtained by the same method as the solution for the first adhesive layer except for the composition of Table 1. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

<Production of round sheet>

The second layer solution was applied onto a separator (a long-side polyester film treated with a polyoxynitride-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90 ° C for 3 minutes to obtain a second layer. The sheet.

A long strip of polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was retained (the inside of the Thompson mold was punched) The outer side is removed to obtain a circular sheet. Furthermore, The above-mentioned half-cut refers to the cutting of the aspect in which the polyester film and the second layer are completely cut and the separator is not completely cut (cut into the middle of the separator).

<Next piece>

The separator of the circular sheet was peeled off, and the solution for the first adhesive layer was applied onto the second layer of the circular sheet so as to have a diameter of 200 mm or more, and dried at 90 ° C for 3 minutes. A long polyester film (thickness: 25 μm, width: 250 mm) was laminated on the dried first adhesive layer to obtain a cross-sectional sheet A having a cross-sectional shape as shown in Fig. 1 . Specifically, the sheet A as a whole has a diameter of 200 mm and a thickness of 10 μm. The second layer has a diameter of 198 mm and the second layer has a thickness of 2 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet A was 8 μm.

(Example 2) <Preparation of solution for the first adhesive layer>

The solution for the first adhesive layer was obtained in the same manner as in Example 1 except for the composition according to Table 1.

<Next film production>

On the SUS foil (manufactured by Toyo Sewing Co., Ltd., SUS 304H-TA), copper plating with a copper sulfate plating bath was performed so that the Cu film thickness was 0.5 μm, and a copper-plated SUS foil was obtained. Cooling was carried out until the obtained copper-plated SUS foil became room temperature (23 ° C).

The first adhesive layer solution was applied onto a copper-plated SUS foil and dried at 90 ° C for 2 minutes. Then, the SUS foil was peeled off to obtain a copper-plated polyamic acid layer. The obtained copper plated polyamic acid layer was subjected to Cu etching. Thereby, a copper plated portion of a circular shape (195 mm Φ (195 mm)) was left to remove other portions. From the above, the back sheet B having the cross-sectional shape shown in Fig. 1 was obtained. Specifically, the entire sheet B has a diameter of 200 mm and a thickness of 10 μm. The second layer has a diameter of 195 mm and the second layer has a thickness of 0.5 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet B was 9.5 μm. In the second embodiment, when the adhesive sheet is formed, the shape of the second layer is formed on the first adhesive layer. (The shape of the first adhesive layer does not exist on the side surface side of the second layer), but the second layer is 0.5 μm and is thin, while the first adhesive layer is 10 μm thick and thick, and the first adhesive The layer is relatively soft (having a low modulus of elasticity), so that in use, the second layer is embedded in the first adhesive layer by pressure. Therefore, the sheet B of the second embodiment has the cross-sectional shape shown in Fig. 1.

(Example 3)

The back sheet C was obtained by the same method as in Example 1 except for the aspect according to the composition of Table 1.

(Example 4) <Production of round sheet>

The solution for the second layer produced in Example 1 was applied onto a separator (a long polyester film treated with a polyfluorene-based release agent: a thickness of 38 μm and a width of 250 mm), and dried at 90 ° C for 3 minutes. A sheet having the second layer was obtained.

A long strip of polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was retained (the inside of the Thompson mold was punched) The outer side was removed to obtain a circular sheet (thickness: 2.5 μm).

<Next piece>

The solution of the first adhesive layer produced in Example 1 was applied onto a separator (a long polyester film treated with a polyfluorene-based release agent: a thickness of 38 μm and a width of 250 mm), and dried at 90 ° C. A sheet having the first adhesive layer was obtained in 3 minutes.

A long polyester film (thickness: 25 μm, width: 250 mm) was laminated on the first adhesive layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the outer portion was removed to remove the punched portion (punched by the Thompson mold). The inner side) to obtain a hollow sheet (thickness: 2.5 μm).

The circular sheet and the separator of the hollow sheet are peeled off, and the second layer of the circular sheet is fitted to the portion of the hollow sheet where the first adhesive layer is not present. The back sheet D of the cross-sectional shape shown in Fig. 2 was obtained. Specifically, the entire sheet D has a diameter of 200 mm and a thickness of 2.5 μm. The second layer has a diameter of 198 mm and the second layer has a thickness of 2.5 μm.

(Example 5)

The same sheet as in Example 1 was produced and used as the back sheet E. Next, the sheet E is used as a sheet of the cross-sectional shape shown in Fig. 3.

(Comparative Example 1)

A single sheet F comprising a single layer of the same first adhesive layer as in Example 1 was obtained. Next, the sheet F was circular, having a diameter of 200 mm and a thickness of 10 μm.

<Measurement of peeling force>

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. The first adhesive layer composed of the first adhesive layer, the first adhesive layer of the composition of Example 2, the first adhesive layer of the composition of Example 3, and the first adhesive layer of the composition of Comparative Example 1.

The first adhesive layers of Examples 1 to 3 and Comparative Example 1 were bonded to an 8-inch wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain twin crystals. The first layer of the first adhesive layer.

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. The second layer of the composition and the second layer of the composition of the third embodiment. Further, a second layer of the composition of Example 2 was produced on a SUS foil so as to have a thickness of 20 μm after drying at 90 ° C for 3 minutes.

The second layer of Example 1, Example 3, and Comparative Example 1 was bonded to an 8 Å wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain twin crystals. The second layer of the circle. The second layer of Example 2 was bonded to an 8-inch wafer.

Each sample (the first adhesive layer or the second layer) was processed into a width of 20 mm and a length of 100 mm, and was subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. ° Peel evaluation. The results are shown in Table 2.

<Process tolerance evaluation>

The back sheet A of Example 1 was roll laminated on a susceptor containing a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Further, the lamination is laminated on the susceptor with the exposed surface of both the first adhesive layer and the second layer as a bonding surface. Thereby, the back sheet A with the pedestal is obtained. Then, wiring is formed on the succeeding sheet A by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

The back sheet B of Example 2 was roll-laid on a susceptor including a ruthenium wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the adhesive sheet B with the pedestal is obtained. Then, wiring is formed on the succeeding sheet B in the same manner as described above.

The sheet C of Example 3 was roll-laid on a susceptor containing a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the slab-attached sheet C is obtained. Then, wiring is formed on the succeeding sheet C in the same manner as described above.

The back sheet D of Example 4 was roll-laid on a susceptor containing a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the adhesive sheet D with the pedestal is obtained. Then, wiring is formed on the succeeding sheet D in the same manner as described above.

The back sheet E of Example 5 was roll-laid on a susceptor including a ruthenium wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Further, the lamination is laminated on the susceptor with the surface on which only the first adhesive layer is exposed as a bonding surface. Thereby, the slab-attached sheet E is obtained. Following On the other hand, wiring is formed on the succeeding sheet E by a semi-additive method.

The back sheet F of Comparative Example 1 was roll-laid on a susceptor containing a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the susceptor-attached sheet F is obtained. Then, wiring is formed on the succeeding sheet F in the same manner as described above.

As a result of the above-described wiring, the case where the bonding sheet was not peeled off from the susceptor and the wiring during the formation was not peeled off from the bonding sheet was evaluated as ○, the bonding sheet was peeled off from the susceptor, or the wiring was formed from the bonding sheet during the formation. The case of peeling was evaluated as ×. The results are shown in Table 2.

<Release evaluation>

The susceptor-attached sheet A of Example 1 was obtained in the same manner as the above process resistance evaluation. Then, the first adhesive layer and the second layer were cut to the base surface by irradiating a laser (YAG laser, output 1.5 W) from the opposite side of the susceptor to the same shape as the succeeding sheet A and having a diameter of 196 mm. .

The susceptor-attached sheet B of Example 2 was obtained in the same manner as the above-described process resistance evaluation. Then, the first adhesive layer and the second layer were cut by a cutter from the opposite side of the susceptor to the same shape as the succeeding sheet B and formed into a circle having a diameter of 197 mm up to the base surface.

The susceptor-attached sheet C of Example 3 was obtained in the same manner as the above process resistance evaluation. Then, the first adhesive layer and the second layer were cut by a Thompson knife from the opposite side of the susceptor to the same shape as the succeeding sheet C and formed into a circle having a diameter of 195 mm up to the base surface.

The susceptor-attached sheet D of Example 4 was obtained in the same manner as the above process resistance evaluation. Then, the first adhesive layer and the second layer were cut by a Thompson knife from the opposite side of the susceptor to the same shape as the succeeding sheet D and having a diameter of 196 mm until the base surface.

The susceptor-attached sheet E of Example 5 was obtained in the same manner as the above process resistance evaluation. Then, the first adhesive layer and the second layer were cut by a Thompson knife from the opposite side of the susceptor to the same shape as the succeeding sheet E and formed into a circle having a diameter of 196 mm up to the base surface.

The susceptor attached to Comparative Example 1 was obtained in the same manner as the above process resistance evaluation. Film F. Then, the first adhesive layer and the second layer were cut by a cutter from the opposite side of the susceptor to the same shape as the succeeding sheet F and formed into a circle having a diameter of 197 mm up to the base surface. The central portion of the cut sheets A to F was suctioned by a vacuum tweezers and pulled up to the upper side. The case where one part of the adhesive sheet or the succeeding film was peeled off from the susceptor was evaluated as ○, and the case where no peeling was performed was evaluated as ×. The results are shown in Table 2.

[Second invention]

The following embodiments and the like correspond to the second invention.

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

(Example 1) <Preparation of Solution for First Adhesive Layer and Solution for Second Layer>

Polyether diamine (D-4000) 332.04 g, 4,4'-diaminodiphenyl was mixed at 70 ° C in N-methyl-2-pyrrolidone (NMP) 942.16 g under a nitrogen stream. 75.28 g of an ether (DDE) and 100 g of pyromellitic dianhydride (PMDA) were reacted to obtain a solution for the first adhesive layer (polyglycine solution A). The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer (polyglycine solution B) was obtained by the same method as the solution for the first adhesive layer except for the composition of Table 3. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

<Production of round sheet>

The second layer solution was applied onto a separator (a long-side polyester film treated with a polyoxynitride-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90 ° C for 3 minutes to obtain a second layer. Sheet (thickness 100 μm).

A long strip of polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was retained (the inside of the Thompson mold was punched) The outer side is removed to obtain a circular sheet. Further, the above-mentioned half-cut refers to a cutting in which the polyester film and the second layer are completely cut and the separator is not completely cut (cut into the middle of the separator).

<Next piece>

The separator of the circular sheet is peeled off, and the solution for the first adhesive layer is made into a diameter of 200 The film was applied to the second layer of the circular sheet at a thickness of 100 mm or more and dried at 90 ° C for 3 minutes. A long polyester film (thickness: 25 μm, width: 250 mm) was laminated on the dried first adhesive layer to obtain a sheet A having a cross-sectional shape as shown in Fig. 18 . Specifically, the sheet A as a whole has a diameter of 200 mm and a thickness of 100 μm. The second layer has a diameter of 196 mm and the second layer has a thickness of 100 μm.

(Example 2) <Preparation of solution for the first adhesive layer>

A solution for the first adhesive layer was obtained by the same method as in Example 1 except for the composition according to Table 3.

<Next film production>

On the SUS foil (manufactured by Toyo Sewing Co., Ltd., SUS 304H-TA), copper plating with a copper sulfate plating bath was performed so that the Cu film thickness was 0.5 μm, and a copper-plated SUS foil was obtained.

The first adhesive layer solution was applied onto a copper-plated SUS foil and dried at 90 ° C for 2 minutes. Then, the SUS foil was peeled off to obtain a copper-plated polyamic acid layer. The obtained copper plated polyamic acid layer was subjected to Cu etching. Thereby, a copper plated portion of a circular shape (195 mm in diameter) remains, and the other portions are removed. From the above, the back sheet B having the cross-sectional shape shown in Fig. 26 was obtained. Specifically, the entire sheet B had a diameter of 199 mm and a thickness of 10 μm. The second layer has a diameter of 195 mm and the second layer has a thickness of 0.5 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet B was 9.5 μm. In the second embodiment, when the adhesive sheet is formed, the shape of the second layer is formed on the first adhesive layer (the shape of the first adhesive layer does not exist on the side surface side of the second layer), but the second The layer is 0.5 μm and thinner. On the other hand, the first adhesive layer is 10 μm thick and the first adhesive layer is relatively soft (low elastic modulus), so when used, it is pressed by pressure. The second layer is embedded in the first adhesive layer. Therefore, the sheet B of the second embodiment has the cross-sectional shape shown in Fig. 28.

(Example 3) <Preparation of Solution for First Adhesive Layer and Solution for Second Layer>

The solution for the first adhesive layer and the solution for the second layer were obtained in the same manner as in Example 1 except for the composition according to Table 3.

<Production of round sheet>

The second layer solution was applied onto a separator (a long-side polyester film treated with a polyoxynitride-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90 ° C for 3 minutes to obtain a second layer. The sheet.

A long strip of polyester film (thickness 25 μm, width 250 mm) was laminated on the second layer of the obtained sheet, and half cut into a diameter of 195 mm by a Thompson mold, and the punched portion was retained (the inside of the Thompson mold was punched) The outer side is removed to obtain a circular sheet. Further, the above-mentioned half-cut refers to a cutting in which the polyester film and the second layer are completely cut and the separator is not completely cut (cut into the middle of the separator).

<Next piece>

The separator of the circular sheet was peeled off, and the solution for the first adhesive layer was applied onto the second layer of the circular sheet so as to have a diameter of 200 mm or more, and dried at 90 ° C for 3 minutes. A long polyester film (thickness: 25 μm, width: 250 mm) was laminated on the dried first adhesive layer to obtain a cross-sectional sheet C having a cross-sectional shape as shown in Fig. 26 . Specifically, the entire sheet C had a diameter of 199 mm and a thickness of 10 μm. The second layer has a diameter of 195 mm and the second layer has a thickness of 2 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet C was 8 μm. The sheet C of Example 3 has the cross-sectional shape shown in Fig. 26.

(Comparative Example 1)

A single sheet E comprising a single layer of the same first adhesive layer as in Example 1 was obtained. Next, the sheet E was circular, having a diameter of 200 mm and a thickness of 100 μm.

<Measurement of peeling force>

On a separator comprising a long-length polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyfluorene-based release agent, the thickness after drying at 90 ° C for 3 minutes was 20 μm. A first adhesive layer of the composition of the first embodiment, a first adhesive layer of the composition of the second embodiment, a first adhesive layer of the composition of the third embodiment, and a first adhesive layer of the composition of the comparative example 1 were prepared. .

The first adhesive layers of Examples 1 to 3 and Comparative Example 1 were bonded to an 8-inch wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain twin crystals. The first layer of the first adhesive layer.

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. The second layer of the composition and the second layer of the composition of the third embodiment. Further, a second layer of the composition of Example 2 was produced on a SUS foil so as to have a thickness of 20 μm after drying at 90 ° C for 3 minutes.

The second layer of Example 1, Example 3, and Comparative Example 1 was bonded to an 8 Å wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain twin crystals. The second layer of the circle. The second layer of Example 2 was bonded to an 8-inch wafer.

Each sample (the first adhesive layer or the second layer) was processed into a width of 20 mm and a length of 100 mm, and was subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. ° Peel evaluation. The results are shown in Table 4.

<Process tolerance evaluation>

The back sheet A of Example 1 was roll laminated on a susceptor containing a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the back sheet A with the pedestal is obtained. Then, wiring is formed on the succeeding sheet A by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

The back sheet B of Example 2 was roll laminated to a twin crystal having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa on the surface opposite to the surface on the side where only the first adhesive layer was exposed as a bonding surface. After the round base, the conditions at 300 ° C, 1.5 hours, under nitrogen atmosphere The ruthenium imidization is carried out. Thereby, the adhesive sheet B with the pedestal is obtained. Then, wiring is formed on the succeeding sheet B in the same manner as described above.

The back sheet C of Example 3 was roll-rolled on a susceptor including a wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa with the surface on the side where only the first adhesive layer was exposed as a bonding surface. Thereafter, the oxime imidization was carried out under the conditions of a nitrogen atmosphere at 300 ° C for 1.5 hours. Thereby, the slab-attached sheet C is obtained. Then, wiring is formed on the succeeding sheet C in the same manner as described above.

The back sheet E of Comparative Example 1 was roll-laid on a susceptor including a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the slab-attached sheet E is obtained. Then, wiring is formed on the succeeding sheet E in the same manner as described above.

As a result of the above-described wiring, the case where the bonding sheet was not peeled off from the susceptor and the wiring during the formation was not peeled off from the bonding sheet was evaluated as ○, the bonding sheet was peeled off from the susceptor, or the wiring was formed from the bonding sheet during the formation. The case of peeling was evaluated as ×. The results are shown in Table 4.

<Release evaluation>

The susceptor-attached sheet A of Example 1 was obtained in the same manner as the above process resistance evaluation. Then, the first adhesive layer and the second layer were cut to the base surface by irradiating a laser (YAG laser, output 1.5 W) from the opposite side of the susceptor to the same shape as the succeeding sheet A and having a diameter of 196 mm. .

The susceptor-attached sheet B of Example 2 was obtained in the same manner as the above-described process resistance evaluation. Then, the first adhesive layer and the second layer were cut by a cutter from the opposite side of the susceptor to the same shape as the succeeding sheet B and formed into a circle having a diameter of 197 mm up to the base surface.

The susceptor-attached sheet C of Example 3 was obtained in the same manner as the above process resistance evaluation. Then, the first adhesive layer and the second layer were cut by a Thompson knife from the opposite side of the susceptor to the same shape as the succeeding sheet C and formed into a circle having a diameter of 195 mm up to the base surface.

The susceptor attached to Comparative Example 1 was obtained in the same manner as the above process resistance evaluation. Slice E. Then, the first adhesive layer and the second layer were cut by a cutter from the opposite side of the susceptor to the same shape as the succeeding sheet E and formed into a circle having a diameter of 197 mm up to the base surface. The central portion of the above-mentioned cut sheets A to C and E is sucked by a vacuum tweezers and pulled up to the upper side. The case where one part of the adhesive sheet or the succeeding film was peeled off from the susceptor was evaluated as ○, and the case where no peeling was performed was evaluated as ×. The results are shown in Table 4.

[Third invention]

The following embodiments and the like correspond to the third invention.

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

(Example 1) <Preparation of Solution for First Adhesive Layer and Solution for Second Layer>

Polyether diamine (D-4000) 350.48 g, 4,4'-diaminodiphenyl was mixed at 70 ° C in N-methyl-2-pyrrolidone (NMP) 1018.81 g under a nitrogen stream. 74.36 g of ether (DDE) and 100 g of pyromellitic dianhydride (PMDA) were reacted to obtain a solution for the first adhesive layer (polyglycine solution A). The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer (polyglycine solution B) was obtained by the same method as the solution for the first adhesive layer except for the composition according to Table 5. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

<Next film production>

The second layer solution was applied onto a separator (a long-side polyester film treated with a polyoxynitride-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90 ° C for 3 minutes to obtain a second layer. Sheet (thickness 8 μm).

The first adhesive layer solution was applied onto a separator (a long polyester film treated with a polyoxynitride-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90° C. for 3 minutes to obtain a first 1 sheet of the adhesive layer (thickness 2 μm).

The sheet having the second layer and the sheet having the first adhesive layer were bonded together (bonding conditions: 95 ° C, 0.4 MPa) to obtain a back sheet A in which a first adhesive layer and a second layer were laminated.

(Example 2)

Obtained in the same manner as in Example 1 except for the aspect according to the composition of Table 5. Then slice B.

(Example 3)

The back sheet C was obtained by the same method as in Example 1 except for the aspect according to the composition of Table 5.

(Comparative Example 1)

A single sheet E comprising a single layer of the same first adhesive layer as in Example 1 was obtained.

<Measurement of peeling force for tantalum wafer>

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. The first adhesive layer composed of the first adhesive layer, the first adhesive layer of the composition of Example 2, the first adhesive layer of the composition of Example 3, and the first adhesive layer of the composition of Comparative Example 1.

The first adhesive layers of Examples 1 to 3 and Comparative Example 1 were bonded to an 8-inch wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain twin crystals. The first layer of the first adhesive layer.

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. The second layer of the composition, the second layer of the composition of the second embodiment, and the second layer of the composition of the third embodiment.

The second layers of Examples 1 to 3 and Comparative Example 1 were bonded to an 8 Å wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain twin crystals. The second layer of the circle.

Each sample (the first adhesive layer or the second layer) was processed into a width of 20 mm and a length of 100 mm, and was subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. ° Peel evaluation. The results are shown in Table 6.

<Measurement of peeling force between the first adhesive layer and the second layer>

The backsheets of the examples and the comparative examples were processed into a width of 20 mm and a length of 100 mm, and 180° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 6.

<Process tolerance evaluation>

The back sheet A of Example 1 was roll laminated on a susceptor including a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa on the side of the first adhesive layer as a bonding surface, and then at 300 ° C. The oxime imidization was carried out under conditions of 1.5 hours under a nitrogen atmosphere. Thereby, the back sheet A with the pedestal is obtained. Then, wiring is formed on the succeeding sheet A by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

After the second layer side was used as the bonding surface, the bonding sheet B of Example 2 was roll laminated on a susceptor including a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then at 300 ° C, 1.5. The hydrazine imidization was carried out under the conditions of an hour and a nitrogen atmosphere. Thereby, the adhesive sheet B with the pedestal is obtained. Then, wiring is formed on the succeeding sheet B in the same manner as described above.

After the first adhesive layer side was used as the bonding surface, the bonding sheet C of Example 3 was roll laminated on a susceptor including a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then at 300 ° C. The oxime imidization was carried out under conditions of 1.5 hours under a nitrogen atmosphere. Thereby, the slab-attached sheet C is obtained. Then, wiring is formed on the succeeding sheet C in the same manner as described above.

The back sheet E of Comparative Example 1 was roll-laid on a susceptor including a silicon wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa, and then subjected to argon gas at 300 ° C for 1.5 hours under a nitrogen atmosphere. Imine. Thereby, the slab-attached sheet E is obtained. Then, wiring is formed on the succeeding sheet E in the same manner as described above.

As a result of the above-described wiring, the case where the bonding sheet was not peeled off from the susceptor and the wiring during the formation was not peeled off from the bonding sheet was evaluated as ○, the bonding sheet was peeled off from the susceptor, or the wiring was formed from the bonding sheet during the formation. The case of peeling was evaluated as ×. The results are shown in Table 6.

<Release evaluation>

The susceptor-attached sheet A of Example 1 was produced in the same manner as the above-described process resistance evaluation, and wiring was formed. Thereafter, the device wafer is mounted and sealed with a resin. Then, it was heated at 250 ° C for 10 minutes.

The susceptor-attached sheet B of Example 2 was produced in the same manner as the above-described process resistance evaluation, and wiring was formed. Thereafter, the device wafer is mounted and sealed with a resin. Then, it was immersed in an SC-1 washing solution (ammonia water: hydrogen peroxide water: water = 1:1:5, 70 ° C) and ultrasonic waves of 24 kHz were applied for 10 minutes.

The susceptor-attached sheet C of Example 3 was produced in the same manner as the above-described process resistance evaluation, and wiring was formed. Thereafter, the device wafer is mounted and sealed with a resin. Then, the contact surface of the first adhesive layer and the second layer was cut by a cutter to form a gap, and then a sharp metal jig (12°) was inserted into the gap to be peeled off.

The susceptor-attached sheet E of Comparative Example 1 was produced in the same manner as the above-described process resistance evaluation, and wiring was further formed. Thereafter, the device wafer is mounted and sealed with a resin. Then, it was heated at 250 ° C for 10 minutes.

After the above-described heat treatment, the stripping treatment using the SC-1 cleaning solution or the cutter, the vertical peeling device (manufactured by Nitto Seiki Co., Ltd., HSA840-WS) is used to adsorb the resin portion of the susceptor and the resin-sealed device wafer vertically. Stripped. The case where the sheet was peeled off from the susceptor was evaluated as ○, and the case where the sheet was not peeled off was evaluated as ×. The results are shown in Table 6.

[4th invention]

The following embodiments and the like correspond to the fourth invention.

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

SD4587L PSA: manufactured by Toray Road, polyoxyn resin

SRX212: Toray Road Manufacturing, Hardener

(Example 1) <Preparation of temporary fixing sheet solution and adhesive layer solution>

The polyether diamine (D-4000) 27.67 g, 4,4'-diamino group II was mixed at 70 ° C in 2,508 g of N,N-dimethylacetamide (DMAc) under a nitrogen stream. 90.43 g of phenyl ether (DDE) and 100 g of pyromellitic dianhydride (PMDA) were reacted to obtain a solution for sheet for temporary fixation (polyglycine solution A). The cooling was carried out until the obtained solution for temporary fixing sheets became room temperature (23 ° C).

The solution for the adhesive layer (polyglycine solution B) was obtained by the same method as the solution for sheet for temporary fixation except the aspect of the composition of Table 7. Cooling was carried out until the obtained solution for the adhesive layer became room temperature (23 ° C).

<temporary fixing sheet>

The temporary fixing sheet solution was applied to a separator (a long-side polyester film treated with a polyfluorene-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90 ° C for 3 minutes to obtain a temporary fixation. Use sheet A.

<For temporary fixing sheet with adhesive layer>

Using the temporary fixing sheet A obtained by two sheets, one sheet is punched into a circle having a radius smaller than the base by 0.5 mm, and the other sheet is punched into a circle having a radius smaller than the base by 0.3 mm. The concave portion is formed by bonding (see Fig. 47). The adhesive layer solution was applied to a portion of the recess and dried at 90 ° C for 3 minutes. This is set as the temporary fixing sheet A with an adhesive layer.

(Example 2)

The temporary fixing sheet B was obtained by the same method as the temporary fixing sheet A of Example 1 except for the composition of Table 7. Further, a solution for an adhesive layer was produced in the same manner as in Example 1 except that the composition of Table 7 was used.

<For temporary fixing sheet with adhesive layer>

The obtained temporary fixing sheet B was punched out into a circle having a radius smaller than the base by 0.1 mm. The temporarily fixed sheet B after being punched is placed on the base and tilted on the base The solution of the adhesive layer was applied and dried at 90 ° C for 3 minutes (refer to Fig. 40 (b)). This is set as the temporary fixing sheet B with an adhesive layer.

(Example 3)

The temporary fixing sheet C was obtained by the same method as the temporary fixing sheet A of Example 1 except for the composition of Table 7. Further, a solution for an adhesive layer was produced in the same manner as in Example 1 except that the composition of Table 7 was used.

<For temporary fixing sheet with adhesive layer>

Using the temporary fixing sheet C obtained in two sheets, one sheet is punched into a circle having a radius smaller than the base by 2 mm, and the other sheet is punched into a circle having a radius smaller than the base by 0.3 mm. The concave portions are formed by bonding together (see Fig. 47). The adhesive layer solution was applied to a portion of the recess and dried at 90 ° C for 3 minutes. This is set as the temporary fixing sheet C with an adhesive layer.

(Comparative Example 1)

The same adhesive layer as in Example 1 was applied to a separator (a long-side polyester film treated with a polyoxynitride-based release agent: a thickness of 38 μm and a width of 250 mm) and dried at 90 ° C for 3 minutes. A single layer of the sheet F comprising the adhesive layer is obtained.

<Measurement of peeling force>

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. The sheet for temporary fixation of the composition, the sheet for temporary fixation of the composition of Example 2, and the sheet for temporary fixation of the composition of Example 3.

The temporary fixing sheets of Examples 1 to 3 were bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a temporary fixing with a ruthenium wafer. Use sheets.

The separator of Example 1 was prepared on a separator comprising a long-side polyester film (thickness: 38 μm, width: 250 mm) treated with a single-sided polyoxon-based release agent, and dried at 90 ° C for 3 minutes and then having a thickness of 20 μm. An adhesive layer composed of the composition, an adhesive layer of the composition of Example 2, The adhesive layer of the composition of Example 3 and the adhesive layer of the composition of Comparative Example 1.

The adhesive layers of Examples 1 to 3 and Comparative Example 1 were bonded to an 8 Å wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a ruthenium wafer. Then the agent layer.

Each sample (temporary fixing sheet or adhesive layer) was processed into a width of 20 mm and a length of 10 (0 mm, using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm / min. The 90° peeling evaluation was carried out, and the results are shown in Table 8.

<Process tolerance evaluation>

The temporary fixing sheet A with the adhesive layer of Example 1 was roll laminated on a susceptor including a ruthenium wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa. At this time, the adhesive layer of the temporary fixing sheet A with the adhesive layer is attached so as to be located at the inclined portion of the susceptor. Thereby, the temporary fixing sheet A with a susceptor is obtained. Then, wiring is formed on the temporary fixing sheet A by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

The sheet B for temporary fixing of Example 2 was roll-laid on a susceptor including a ruthenium wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa. Then, the solution for the adhesive layer of Example 2 was applied to the inclined portion of the end portion of the susceptor and cured by heating at a temperature of 120 ° C for 10 minutes. Thereby, the temporary fixing sheet B with the susceptor is obtained. Then, wiring is formed on the temporary fixing sheet B by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

The solution for the adhesive layer of Example 3 was applied to the inclined portion of the end portion of the susceptor including the ruthenium wafer having a diameter of 200 mm. Then, the temporary fixing sheet C of Example 3 was roll laminated on the susceptor at a temperature of 90 ° C and a pressure of 0.1 MPa. Thereafter, the adhesive layer was cured with a solution by heating at a temperature of 150 ° C for 5 minutes. Thereby, the temporary fixing sheet C with the susceptor is obtained. Then, wiring is formed on the temporary fixing sheet C by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

The back sheet F of Comparative Example 1 was roll-laid on a susceptor including a ruthenium wafer having a diameter of 200 mm at a temperature of 90 ° C and a pressure of 0.1 MPa. Thereby, the adhesive layer F with the susceptor is obtained. Then, wiring is formed on the adhesive layer F by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

<Release evaluation>

The susceptor-attached temporary fixing sheet A of Example 1 was obtained in the same manner as the above-described process resistance evaluation. Then, the laser is irradiated to the base surface by irradiating a laser (YAG laser, output 1.5 W) from the opposite side of the susceptor. At this time, the cutting system is set to be further inside than the adhesive layer (refer to FIG. 47).

The susceptor-attached temporary fixing sheet B of Example 2 was obtained in the same manner as the above-described process resistance evaluation. Then, only the temporary fixing sheet is cut from the obliquely upward direction by the cutter (refer to FIG. 45).

The susceptor-attached temporary fixing sheet C of Example 3 was obtained in the same manner as the above-described process resistance evaluation. Then, only the temporary fixing sheet is cut from the obliquely upward direction by the cutter (refer to FIG. 45).

The susceptor-attached adhesive layer F of Comparative Example 1 was obtained in the same manner as the above process resistance evaluation. Then, only the adhesive layer F is cut from the obliquely upward direction by the cutter.

The central portion of the temporarily-fixed sheets A to C and the central portion of the adhesive layer F after the dicing are suctioned by a vacuum tweezers and pulled up. The case where the temporary fixing sheet or the adhesive layer was peeled off from the susceptor was evaluated as ○, and the case where the detached sheet was not peeled off was evaluated as ×. The results are shown in Table 8.

[Fifth invention]

The following embodiments and the like correspond to the fifth invention.

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

Spacer (long strip polyester film treated on one side by polyoxynitride stripper)

(Example 1)

Under a nitrogen gas stream, D-4000 365 g, DDE 74 g, and PMDA 100 g were mixed at 70 ° C in 1257 g of DMAc and reacted, and then cooled to room temperature (23 ° C) to obtain a first adhesive solution.

The second adhesive solution was obtained by the same method as the first adhesive solution except for the composition according to Table 9. The second adhesive solution was applied onto a separator, and dried at 90 ° C for 3 minutes to prepare a sheet having a coating layer of the second adhesive solution, and then a plurality of through-holes in the thickness direction of the sheet were formed to obtain an empty space. Hole sheet. The shape of the through hole when the hollow sheet was viewed from above was circular, and the area of each of the through holes when the hollow sheet was viewed was 78.5 μm ² . Each of the through holes has a diameter of 10 μm. The aperture ratio is 50%.

The first adhesive solution was applied to the perforated sheet and its surroundings (the region around the perforated sheet), and the through-hole was filled with the first adhesive solution to form a coating layer of the first adhesive solution. Thereafter, the film was dried at 90 ° C for 3 minutes to obtain a sheet of the shape of the embodiment 1 shown in Figs. 48 and 49.

The sheet then has a diameter of 200 mm and a thickness of 100 μm.

The second layer has a diameter of 196 mm and the second layer has a thickness of 1 μm.

Next, the thickness of the first adhesive layer in the central portion of the sheet was 99 μm.

(Example 2)

The first adhesive solution was obtained by the same method as in Example 1 except for the aspect according to the composition of Table 9.

An adhesive sheet having the shape of the first embodiment shown in Figs. 48 and 49 was obtained by the same method as in Example 1 except that the aluminum mesh having an opening ratio of 80% was used instead of the porous sheet.

Next, the entire sheet had a diameter of 200 mm and a thickness of 120.5 μm.

The second layer has a diameter of 198 mm and the second layer has a thickness of 0.5 μm.

Next, the thickness of the first adhesive layer in the central portion of the sheet was 120 μm.

(Example 3)

In addition to the first adhesive solution and the second adhesive solution according to the composition of Table 9, the shape of the through hole when the porous sheet is viewed in a plan view is triangular, and the area of each through hole is 7.0 mm ² . Further, in the same manner as in the first embodiment, a film of the shape of the first embodiment shown in Figs. 48 and 49 was obtained except that the aperture ratio was 10%.

The sheet then has a diameter of 200 mm and a thickness of 100 μm.

The second layer has a diameter of 197 mm and the second layer has a thickness of 1 μm.

Next, the thickness of the first adhesive layer in the central portion of the sheet was 99 μm.

(Comparative Example 1)

The first adhesive solution was obtained by the same method as in Example 1 except for the aspect according to the composition of Table 9.

The first adhesive solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a continuous sheet comprising a single layer of the first adhesive. The sheet was then round, 200 mm in diameter and 150 μm thick.

[Measurement of the adhesion force of the first adhesive layer]

The surface of the adhesive sheet including only the first adhesive layer (coating layer of the first adhesive solution) was bonded to an 8-inch wafer and subjected to a nitrogen atmosphere at 300 ° C for 1.5 hours. Amination is carried out to obtain a film with a tantalum wafer attached.

The backing sheet with the tantalum wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 10.

[Measurement of the adhesion force of a perforated sheet and an aluminum mesh (structure having a plurality of through holes)] (Example 1, Example 3)

The porous sheet of Example 1 and Example 3 was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain an air-filled wafer. Hole sheet.

The perforated sheet with the tantalum wafer was processed into a 20 mm width and a length of 100 mm, and a 90° peel evaluation was performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. . The results are shown in Table 10.

(Example 2)

An aluminum screen attached to the enamel wafer was obtained by attaching an aluminum screen to an 8-inch wafer. The aluminum screen with the enamel wafer obtained was processed into a width of 20 mm and a length of 100 mm, and subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm / min for 90 °. Peel evaluation. The results are shown in Table 10.

[Measurement of the adhesion of the second layer]

The second layer (including the porous sheet or the aluminum mesh and the second layer of the first adhesive filled in the through holes) is cut out from the succeeding sheet, and the cut second layer is bonded to the second layer. The second layer with the ruthenium wafer was obtained by ruthenium imidization on a ruthenium wafer under a nitrogen atmosphere at 300 ° C for 1.5 hours.

The second layer with the ruthenium wafer was processed to have a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 10.

<Process tolerance evaluation> (Examples 1 to 3)

The first adhesive layer of the succeeding films of Examples 1 to 3 and the exposed surface of the second layer were attached to a susceptor (a wafer having a diameter of 200 mm and a thickness of 726 μm). The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa. Thereafter, the oxime imidization was carried out under the conditions of a nitrogen atmosphere at 300 ° C for 1.5 hours. Thereby, an adhesive sheet with a pedestal is obtained. Then, wiring is formed on the succeeding film by a semi-additive method. Specifically, it is formed by the method described in the above embodiment.

(Comparative Example 1)

A susceptor-attached sheet was produced in the same manner as in Examples 1 to 3, and then wiring was formed on the sheet by a semi-additive method.

As a result of the above-described wiring, the case where the bonding sheet was not peeled off from the susceptor and the wiring during the formation was not peeled off from the bonding sheet was evaluated as ○, the bonding sheet was peeled off from the susceptor, or the wiring was formed from the bonding sheet during the formation. The case of peeling was evaluated as ×. Show the results in the table 10.

<Release evaluation>

A susceptor-attached sheet was obtained by the same method as the above process resistance evaluation.

The incision was made inward from the side of the subsequent sheet using a Thompson knife. The slit is cut to the second layer. After the slit was cut out, the central portion of the sheet was suctioned by a vacuum forceps and pulled up to the upper side. The case where one part of the adhesive sheet or the succeeding film was peeled off from the susceptor was evaluated as ○, and the case where no peeling was performed was evaluated as ×. The results are shown in Table 10.

5‧‧‧Next film

50‧‧‧1st adhesive layer

51‧‧‧2nd floor

53‧‧‧Central Department

54‧‧‧ peripherals

Claims (5)

A method of manufacturing a semiconductor device, comprising: a method of manufacturing a semiconductor device having a structure in which a workpiece is mounted on a wiring, and comprising: a step of preparing a bonding sheet having a first adhesive layer and a sticker The adhesion force after being attached to the susceptor is lower than the second layer of the first adhesive layer, and at least the peripheral portion of the adhesive sheet is formed of the first adhesive layer; and the adhesive sheet is attached to the susceptor a step of forming a wiring on the bonding sheet after bonding to the susceptor; a step of mounting a workpiece on the wiring; and a step of separating the workpiece with the wiring from the susceptor after the mounting. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive sheet is formed of a laminate of the first adhesive layer and the second layer at a central portion further inside the peripheral portion, and is bonded to the susceptor The step of bonding the above-mentioned adhesive sheet to the susceptor by using the surface on the side where the second layer is exposed is used as a bonding surface. The method of manufacturing a semiconductor device according to claim 1, wherein the succeeding sheet is formed by the second layer at a central portion further inside the peripheral portion. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive sheet is formed of a laminate of the first adhesive layer and the second layer at a central portion further inside the peripheral portion, and is bonded to the susceptor The step of bonding the above-mentioned adhesive sheet to the susceptor by using only the surface on the side where the first adhesive layer is exposed as the bonding surface. An adhesive sheet for use in a method of fabricating a semiconductor device according to any one of claims 1 to 4.