TW201417161A - Adhesive sheet for semiconductor device production, semiconductor device, and method for producing semiconductor device - Google Patents

Abstract

The objective of the present invention is to provide an adhesive sheet that is for semiconductor device production, can be firmly affixed to the pedestal of a semiconductor wafer, and is such that the pedestal is easily separated from the semiconductor wafer. The present invention pertains to the adhesive sheet for semiconductor device production and used for affixing a semiconductor wafer to a pedestal, wherein the adhesive sheet has a first adhesive layer and a second layer having a lower adhesive strength than the first adhesive layer, and at least the peripheral section of the adhesive sheet for semiconductor device production is formed from a first adhesive layer.

Description

Semiconductor sheet for semiconductor device manufacturing, semiconductor device, and method for manufacturing semiconductor device

According to a first aspect of the invention, there is provided a semiconductor wafer manufacturing device, a semiconductor device, and a semiconductor device manufacturing method.

Conventionally, in the manufacturing step of the semiconductor device, there is a case where the semiconductor wafer is temporarily fixed on the susceptor, the semiconductor wafer is subjected to a specific process such as back grinding, and then the susceptor is separated from the semiconductor wafer. . In the above steps, it is important that the susceptor can be easily separated from the semiconductor wafer.

It is known to use a liquid adhesive as a method of temporarily fixing a semiconductor wafer to a susceptor. The liquid adhesive is applied to the semiconductor wafer or susceptor by spin coating.

Patent Document 1 discloses a method in which a device wafer as a first substrate is bonded to a carrier substrate as a second substrate via a filling layer that is not strongly bonded, and a bonding material is filled on a periphery of the filling layer. The hardening is performed to form an edge joint to bring the first substrate and the second substrate into contact.

Further, Patent Document 2 discloses a method of selecting a group consisting of a polymer and an oligomer selected from the group consisting of quinone imine, amidoximine, and amidoxime-oxime, selected from a low group. The first substrate and the second substrate are bonded to each other by the bonding composition layer of the compound in the group of the polymer and the polymer.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-510518

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2010-531385

The filling layer described in Patent Document 1 or the bonding composition layer described in Patent Document 2 is applied by spin coating or the like. However, if a layer having a thickness of 10 μm or more which is required to be subsequently formed is formed by coating, there is a problem in that the coated surface is generally rough, the unevenness of followability is poor, and the required adhesive force cannot be obtained, and the semiconductor wafer cannot be sufficiently obtained. Fixed to the base.

Moreover, in the case of coating by spin coating, there is a problem that most of the material is wasted. Moreover, since the material has a higher viscosity for subsequent use, it is labor intensive to remove the dirt of the spin coater.

The first aspect of the present invention has been made in view of the above problems, and provides an adhesive sheet for manufacturing a semiconductor device which can firmly fix a semiconductor wafer to a susceptor and easily separate the susceptor from the semiconductor wafer. Further, a semiconductor device using the semiconductor device manufacturing sheet and a method of manufacturing the semiconductor device are provided.

The inventors of the present invention have found that the above problem can be solved by adopting the following configuration, and the first invention can be achieved.

That is, the first aspect of the invention relates to an adhesive sheet for manufacturing a semiconductor device, which is used for fixing a semiconductor wafer to a susceptor, and has a first adhesive layer and a lower adhesive force than the first adhesive In the second layer of the layer, at least the peripheral portion of the succeeding film for semiconductor device production is formed of the first adhesive layer.

Since the above-mentioned succeeding sheet is in the form of a sheet, the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Furthermore, the material is not wasted as a spin coating. Moreover, since it is in the form of a sheet, it can be easily used.

Further, the peripheral portion of the succeeding sheet is formed of the first adhesive layer. Then, the first adhesive layer having a higher force than the second layer exists in the peripheral portion, so that the semiconductor wafer can be firmly fixed to the susceptor at this portion.

Moreover, since not only the first adhesive layer but also the second layer having a lower adhesive force than the first adhesive layer is provided, the susceptor can be self-crystallized by an external force as long as the adhesion of the first adhesive layer is lowered. The circle is easily separated.

As a method of lowering the adhesion force of the first adhesive layer, a method of reducing the adhesion force by dissolving the first adhesive layer in a solvent is used, and the slit is physically cut by a cutter or a laser equal to the first adhesive layer. A method of lowering the adhesion force; a method of forming a first adhesive layer by using a material whose heating force is lowered by heating, and a method of reducing the adhesion force by heating, or the like. Since the first adhesive layer is formed on the peripheral portion of the adhesive sheet, the first adhesive layer is easily dissolved in a solvent, or the slit is physically cut by a cutter or a laser to reduce the first adhesive layer. Following the force, it is easy to separate the susceptor from the semiconductor wafer.

In the first aspect of the invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer are 90° peeling and peeling off the silicon wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. force. In the case where the first adhesive layer is followed by hydrazine imidization or thermal curing, it means a state of being fixed on a ruthenium wafer (for example, after ruthenium or after thermal hardening) 90° peel off the peel force. In the case where the second layer is followed by hydrazine imidization or thermal hardening, it means a 90° tear-off in a state of being fixed on a germanium wafer (for example, after hydrazine imidization or after heat hardening). Peel force. Specifically, the measurement can be carried out by the method described in the examples.

Preferably, the succeeding sheet is formed such that a central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer. According to the above configuration, the semiconductor wafer or the susceptor can be firmly fixed by the surface on which only the first adhesive layer is exposed. Further, since the central portion is formed by laminating the first adhesive layer and the second layer, the adhesion of the central portion is relatively lower than that of the peripheral portion formed only by the first adhesive layer. Therefore, if at least the adhesion of the peripheral portion is reduced, The susceptor can be easily separated from the semiconductor wafer by an external force. Further, when the second layer is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor, and the paste remains small, and the susceptor can be easily recovered.

It is preferable that the above-mentioned succeeding sheet is formed such that the central portion further inside than the peripheral portion is formed by the second layer. According to the above configuration, since the central portion is formed by the second layer, when the adhesion of the first adhesive layer is lowered, the susceptor can be easily separated from the semiconductor wafer by an external force. Further, since the second layer is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor, and the paste remains small, and the susceptor can be easily recovered.

It is preferable that a third layer having a lower adhesion force than the first adhesive layer is formed over the peripheral portion and the central portion. When the surface having the adhesive force lower than the exposed third layer of the first adhesive layer is attached to the semiconductor wafer, the adhesive sheet can be easily peeled off from the semiconductor wafer. Moreover, the paste residue of the semiconductor wafer can be eliminated, and the semiconductor wafer cleaning step can be omitted.

Moreover, the first aspect of the invention relates to a semiconductor device obtained by using the above-described semiconductor device manufacturing back sheet.

Further, a first aspect of the invention relates to a method of manufacturing a semiconductor device, comprising: a step of fixing a semiconductor wafer on a susceptor using the slab for manufacturing the semiconductor device; and separating the susceptor from the semiconductor wafer step.

The present invention relates to an adhesive sheet for manufacturing a semiconductor device, in which a semiconductor wafer is fixed to a susceptor, and a first adhesive layer is laminated and a bonding force lower than the first adhesive The second layer of the layer.

Since the above-mentioned succeeding sheet is in the form of a sheet, the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Furthermore, the material is not wasted as a spin coating. Moreover, since it is in the form of a sheet, it can be easily used.

Further, a first adhesive layer and a second layer having a lower adhesion force than the first adhesive layer are laminated. Since the first adhesive layer is provided, the semiconductor wafer can be favorably fixed to the susceptor. Since the adhesion layer is lower than the second layer of the first adhesive layer, it can be externally The susceptor is easily separated from the semiconductor wafer.

In the second aspect of the invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer are 90° tearing of the germanium wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. In addition to peeling force. Furthermore, the adhesive sheet for fixing a semiconductor wafer to a susceptor by performing hydrazine imidization or thermosetting means a state of being fixed on a ruthenium wafer (for example, after yttrium or after thermal hardening) ) 90 ° tear off the peel force. Specifically, the measurement can be carried out by the method described in the examples.

Further, the invention of claim 2-1 relates to a method of manufacturing a semiconductor device, comprising: a step of fixing a semiconductor wafer on a susceptor using the above-described semiconductor device manufacturing slab; and staking the susceptor from the semiconductor wafer The step of separation.

Preferably, the step of fixing the semiconductor wafer on the susceptor by using the semiconductor device manufacturing tab is performed by attaching the semiconductor wafer to the first adhesive layer and attaching the pedestal to the susceptor The step of fixing the semiconductor wafer on the susceptor on the second layer.

The first adhesive layer has a higher adhesion force than the second layer, and the surface of the semiconductor wafer or the like is excellent in unevenness followability. According to the above configuration, since the first adhesive layer can follow the unevenness on the surface of the semiconductor wafer, the semiconductor wafer can be favorably fixed to the susceptor. On the other hand, since the second layer having a lower force than the first adhesive layer is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

2-2. The present invention relates to a method of manufacturing a semiconductor device, comprising: a step (A) of attaching a semiconductor wafer to a bonding sheet (a); and a step of attaching a pedestal to the bonding sheet (b) ( B); and the above-mentioned succeeding sheet (a) of the semiconductor wafer with the succeeding sheet (a) obtained by the above step (A), and the attached sheet (b) obtained by the above step (B) The step (C) of bonding the above-mentioned succeeding sheet (b) of the susceptor; and the adhesion of one of the above-mentioned adhesive sheets (a) and (b) is lower than the other.

Since the above-mentioned succeeding sheets (a) and (b) in the form of sheets are used, they are not as wave-like as the spin coating. Fee materials.

Further, one of the above-mentioned succeeding sheets (a) and (b) has a lower adhesion force than the other. Therefore, it is easy to separate the susceptor from the semiconductor wafer. Further, since the adhesive sheet having a relatively high adhesion force is used, the semiconductor wafer can be favorably fixed to the susceptor.

In the second aspect of the invention, the adhesive force of the adhesive sheet (a) and the adhesive force of the adhesive sheet (b) refer to a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min. ° Peel off the peeling force. Further, in the case where the succeeding sheets (a) and (b) are those which are subjected to ruthenium iodization or heat hardening, etc., the state is fixed on the ruthenium wafer (for example, after ruthenium or After 90° of heat hardening, the peeling force is peeled off. Specifically, the measurement can be carried out by the method described in the examples.

The adhesive force of the above-mentioned succeeding sheet (b) is preferably lower than that of the above-mentioned adhesive sheet (a).

According to the above configuration, the adhesion strength of the succeeding sheet (a) is higher than that of the adhesive sheet (b), and the surface of the semiconductor wafer or the like is excellent. The sheet (a) can follow the irregularities on the surface of the semiconductor wafer, so that the semiconductor wafer can be well fixed to the susceptor. On the other hand, since the adhesive force is lower than the contact sheet (b) of the adhesive sheet (a) and the susceptor, the adhesive sheet (b) is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

A third aspect of the invention relates to a method of manufacturing a semiconductor device, comprising: a step (A) of attaching a semiconductor wafer to one surface of a temporary fixing sheet; and attaching to the other surface of the temporary fixing sheet a step (B) of the pedestal base; and forming the temporary fixing sheet between the temporary fixing sheet and the inclined surface portion of the susceptor with an adhesive force higher than that of the temporary fixing sheet The step (C) of fixing the material to the base.

The temporary fixing sheet used in the third invention is in the form of a sheet, and the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Therefore, the temporary fixing sheet can be well adhered to the semiconductor wafer. Further, since the adhesive layer having a higher adhesive force than the temporary fixing sheet is used, the temporary fixing sheet can be firmly fixed to the susceptor. its As a result, the semiconductor wafer can be well fixed to the susceptor.

Further, in the third aspect of the invention, the temporary fixing sheet is fixed to the susceptor by forming an adhesive layer having a higher adhesive force than the temporary fixing sheet between the temporary fixing sheet and the inclined surface portion of the susceptor. That is, the adhesive layer functions to fix the temporarily fixing sheet to the susceptor.

According to the third aspect of the invention, since the adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor, it is easy to cut the slit in the temporary fixing sheet or reduce the adhesion of the adhesive layer. Separation is easy.

In the third aspect of the invention, the adhesion force of the temporary fixing sheet and the adhesion force of the adhesive layer refer to a 90° peeling peeling of the tantalum wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. force. In the case where the sheet for temporary fixing is a quinone imidization or thermosetting, it means a state in which it is fixed on a ruthenium wafer (for example, after ytidine or after thermal hardening). ° Peel off the peeling force. In the case where the adhesive layer is a ruthenium iodide or a heat hardening, etc., it means a 90° peeling peeling force in a state of being fixed on a ruthenium wafer (for example, after ytidine or after thermal hardening). . Specifically, the measurement can be carried out by the method described in the examples.

After the above step (C), it is preferred to include a step of separating the susceptor from the temporary fixing sheet.

A 4-1rd aspect of the invention relates to a method of manufacturing a semiconductor device, comprising: a step of preparing a bonding sheet having a first adhesive layer and a second bonding force lower than a second bonding layer a layer, a peripheral portion of the sheet is formed of the first adhesive layer, and a central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer; and the semiconductor wafer is fixed by using the adhesive sheet And a step of separating the susceptor from the semiconductor wafer until the second layer is formed on the first adhesive layer.

In the 4-1th invention, the adhesive sheet is first prepared. Since the above-mentioned succeeding sheet is in the form of a sheet, the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Enter However, materials are not wasted as a spin coating. Moreover, since it is in the form of a sheet, it can be easily used.

The peripheral portion of the sheet is then formed of the first adhesive layer. Then, the first adhesive layer having a higher force than the second layer exists in the peripheral portion, so that the semiconductor wafer can be firmly fixed to the susceptor at this portion.

Further, the central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer. The semiconductor wafer or the susceptor can be firmly fixed by the surface on which only the first adhesive layer is exposed. Further, when the second layer is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor, and the paste remains small, and the susceptor can be easily recovered.

In the separating step, the first adhesive layer is cut. Thereby, the continuity of the first adhesive layer can be broken, and the susceptor can be easily separated from the semiconductor wafer. Further, since the succeeding film has the first adhesive layer formed on the peripheral portion thereof, the first adhesive layer can be easily cut.

In the present invention, the adhesion force of the first adhesive layer and the adhesion force of the second layer are 90° tearing of the germanium wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. In addition to peeling force. In the case where the first adhesive layer is followed by hydrazine imidization or thermal curing, it means a state of being fixed on a ruthenium wafer (for example, after ruthenium or after thermal hardening) 90° peel off the peel force. In the case where the second layer is followed by hydrazine imidization or thermal hardening, it means a 90° tear-off in a state of being fixed on a germanium wafer (for example, after hydrazine imidization or after heat hardening). Peel force. Specifically, the measurement can be carried out by the method described in the examples.

A fourth aspect of the invention is directed to a method of manufacturing a semiconductor device, comprising: a step of preparing a bonding sheet having a first adhesive layer and a second bonding force lower than a second bonding layer a layer, wherein a peripheral portion of the sheet is formed of the first adhesive layer, a central portion further inside the peripheral portion is formed of the second layer, and a step of fixing the semiconductor wafer to the pedestal using the adhesive sheet; Cutting a slit in the first adhesive layer until the second layer is reached to separate the susceptor from the semiconductor wafer The steps.

In the fourth invention of the present invention, first, a sheet is prepared. Since the above-mentioned succeeding sheet is in the form of a sheet, the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Furthermore, the material is not wasted as a spin coating. Moreover, since it is in the form of a sheet, it can be easily used.

The peripheral portion of the sheet is then formed of the first adhesive layer. Then, the first adhesive layer having a higher force than the second layer exists in the peripheral portion, so that the semiconductor wafer can be firmly fixed to the susceptor at this portion.

Further, a central portion further inside than the peripheral portion is formed by the second layer. Since the second layer is in contact with the susceptor, the adhesive sheet is easily peeled off, and the paste remains small, and the susceptor can be easily recovered.

In the separating step, the first adhesive layer is cut. Thereby, the continuity of the first adhesive layer can be broken, and the susceptor can be easily separated from the semiconductor wafer. Further, since the succeeding film has the first adhesive layer formed on the peripheral portion thereof, it is easy to cut the slit in the first adhesive layer.

In the fourth aspect of the invention, the definition of the adhesion force of the first adhesive layer and the adhesion of the second layer is the same as that of the case of the 4-1th invention.

A fourth aspect of the invention relates to a method of manufacturing a semiconductor device, comprising: a step of preparing a bonding sheet having a first adhesive layer and a second layer having a lower adhesion force than the first adhesive layer a step of fixing the semiconductor wafer to the susceptor using the adhesive sheet; and cutting a slit at a boundary between the first adhesive layer and the second layer to separate the first adhesive layer from the second layer step.

In the fourth invention of the present invention, first, a sheet is prepared. Since the above-mentioned succeeding sheet is in the form of a sheet, the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Furthermore, the material is not wasted as a spin coating. Moreover, since it is in the form of a sheet, it can be easily used.

The adhesive sheet is a first adhesive layer and a bonding force lower than that of the second adhesive layer of the first adhesive layer Laminated body. In the fixing step, it is used to fix the semiconductor wafer to the susceptor. Since the adhesive sheet having the first adhesive layer is used, the semiconductor wafer can be favorably fixed to the susceptor.

In the separating step, the slit is cut out at the boundary between the first adhesive layer and the second layer having a lower adhesive force than the first adhesive layer. Since the adhesion force of the second layer is lower than that of the first adhesive layer, the first adhesive layer and the second layer can be easily separated by using the slit portion as a starting point.

In the fourth aspect of the invention, the definition of the adhesion force of the first adhesive layer and the adhesion of the second layer is the same as in the case of the fourth invention.

Preferably, the step of fixing the semiconductor wafer on the pedestal using the bonding sheet is performed by attaching the semiconductor wafer to the first adhesive layer and attaching the pedestal to the second layer. And the step of fixing the semiconductor wafer to the pedestal.

The first adhesive layer has a higher adhesion force than the second layer, and the surface of the semiconductor wafer or the like is excellent in unevenness followability. According to the above configuration, since the first adhesive layer can follow the unevenness on the surface of the semiconductor wafer, the semiconductor wafer can be favorably fixed to the susceptor. On the other hand, since the second layer having a lower force than the first adhesive layer is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

4-4 The present invention relates to a method of manufacturing a semiconductor device, comprising: a step (A) of attaching a semiconductor wafer to a bonding sheet (a); and a step of attaching a pedestal to the bonding sheet (b) ( B); the above-mentioned succeeding sheet (a) of the semiconductor wafer with the adhesive sheet (a) obtained by the above step (A), and the base of the adhesive sheet (b) obtained by the above step (B) The bonding sheet (b) of the holder is bonded to obtain a step (C) of sequentially laminating the pedestal, the bonding sheet (b), the bonding sheet (a), and the semiconductor wafer; and a step (D) of cutting the slit between the succeeding sheet (a) and the succeeding sheet (b) and separating the succeeding sheet (a) from the succeeding sheet (b); and the succeeding sheet (a) And one of (b) has a lower power than the other.

Since the sheet-like adhesive sheets (a) and (b) are used, they are not wasteful like spin coating. material.

In the step of obtaining the laminated body, not only the adhesive sheet having a lower bonding force but also a bonding sheet having a relatively high bonding force is used, so that the semiconductor wafer can be favorably fixed to the susceptor.

In the separating step, the slit is cut at the boundary between the succeeding sheet (a) and the succeeding sheet (b) of the laminated body. Then, the adhesion force of one of the sheets (a) and (b) is lower than the other, so that the succeeding sheets (a) and (b) can be easily separated by using the slit portion as a starting point.

In the fourth aspect of the invention, the adhesive force of the adhesive sheet (a) and the adhesive force of the adhesive sheet (b) refer to a temperature of 23 ± 2 ° C and a peeling speed of 300 mm / min. ° Peel off the peeling force. Further, in the case where the succeeding sheet (a) is a person who is subjected to ruthenium iodization or thermal hardening, etc., it means a state of being fixed on a ruthenium wafer (for example, after ruthenium or after heat hardening) 90° peel off the peel force. In the case where the succeeding sheet (b) is a ruthenium imidization or heat hardening, etc., it means a state of being fixed on the ruthenium wafer (for example, after yttrium or after thermosetting) Peel off the peeling force. Specifically, the measurement can be carried out by the method described in the examples.

The adhesive force of the above-mentioned succeeding sheet (b) is preferably lower than that of the above-mentioned adhesive sheet (a).

According to the above configuration, the adhesion strength of the succeeding sheet (a) is higher than that of the adhesive sheet (b), and the surface of the semiconductor wafer or the like is excellent. The sheet (a) can follow the irregularities on the surface of the semiconductor wafer, so that the semiconductor wafer can be well fixed to the susceptor. On the other hand, since the adhesive force is lower than the contact sheet (b) of the adhesive sheet (a) and the susceptor, the adhesive sheet (b) is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

The present invention relates to a method of manufacturing a semiconductor device, comprising: a step (I) of attaching a semiconductor wafer to one side of a temporary fixing sheet; and attaching to the other side of the temporary fixing sheet a step (II) of the pedestal base; and the temporary fixing of the temporary fixing sheet between the temporary fixing sheet and the inclined surface portion of the susceptor is higher than the temporary fixing sheet use After the sheet is fixed to the susceptor (III); and after the steps (I) to (III), a slit is cut in the temporary fixing sheet to separate the susceptor from the temporary fixing sheet Step (IV).

The sheet for temporary fixation is in the form of a sheet, and the surface can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating. Therefore, the temporary fixing sheet can be well adhered to the semiconductor wafer. Further, since the adhesive layer having a temporary adhesive force higher than the temporary fixing sheet is used, the temporary fixing sheet can be firmly fixed to the susceptor. Therefore, the semiconductor wafer can be well fixed to the susceptor.

In the step (IV), the slit is cut out on the temporarily fixing sheet. Thereby, the continuity of the temporary fixing sheet can be broken, and the susceptor can be easily separated from the temporary fixing sheet. Further, since the temporary fixing adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor, it is easy to cut the slit in the temporary fixing sheet.

In the fourth aspect of the invention, the adhesion force of the temporary fixing sheet and the adhesion force of the temporary fixing adhesive layer refer to the temperature of 23 ± 2 ° C and the peeling speed of 300 mm / min. Peel off the peel force at 90°. In the case where the sheet for temporary fixing is a quinone imidization or thermosetting, it means a state in which it is fixed on a ruthenium wafer (for example, after ytidine or after thermal hardening). ° Peel off the peeling force. In the case where the adhesive layer for temporary fixing is a ruthenium imidization or heat hardening, it means a 90° tearing state in a state of being fixed on a ruthenium wafer (for example, after ytidine or after thermal hardening). In addition to peeling force. Specifically, the measurement can be carried out by the method described in the examples.

According to a fifth aspect of the invention, there is provided an adhesive sheet for manufacturing a semiconductor device, wherein the semiconductor wafer is fixed to a susceptor, and has a first adhesive layer and a structure having a large number of through holes and/or a non-woven fabric The structural body serves as the second layer of the skeleton, and the adhesion of the second layer is lower than the adhesion of the first adhesive layer.

Since the above-mentioned succeeding sheet is in the form of a sheet, material is not wasted as in the case of spin coating. Moreover, it is not necessary to remove the dirt of the spin coater, and the maintenance of the apparatus is easy. The above-mentioned succeeding film is in the form of a sheet, so On the other hand, the surface of the first adhesive layer can be uniformly formed as compared with the case where the adhesive layer is formed by spin coating, and the adhesion of the first adhesive layer can be improved.

Since the above-mentioned adhesive sheet has the first adhesive layer, the semiconductor wafer can be favorably fixed to the susceptor. On the other hand, since the second layer having the lower adhesion force than the first adhesive layer is provided, the susceptor can be easily separated from the semiconductor wafer by an external force.

Further, the second layer is a layer having a structure having a large number of through holes and/or a non-woven structure as a skeleton, and can be formed, for example, by a mesh such as a gold mesh or a non-woven fabric. Therefore, when the adhesive sheet is prepared, the adhesive composition of the first adhesive layer is prepared as the adhesive material, and it is not necessary to prepare two kinds of adhesives for the filling layer and the edge bonding as in Patent Document 1.

In the fifth aspect of the invention, the adhesion between the first adhesive layer and the adhesion of the second layer means a 90° peeling and peeling of the tantalum wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min. force. In the case where the first adhesive layer is followed by hydrazine imidization or thermal curing, it means a state of being fixed on a ruthenium wafer (for example, after ruthenium or after thermal hardening) 90° peel off the peel force. The second layer is also the same. Specifically, the measurement can be carried out by the method described in the examples.

Preferably, the through holes and the plurality of holes of the nonwoven fabric structure are filled by the adhesive composition. In this case, the area of contact of the adhesive composition with the semiconductor wafer or the susceptor can be controlled according to the aperture ratio of the structure having the through holes or the density of the non-woven structure, and the like, and the low adhesion force can be easily formed. 2 layer.

It is preferable that at least a peripheral portion of the succeeding sheet for manufacturing a semiconductor device is formed of the first adhesive layer.

Since the peripheral portion of the above-mentioned adhesive sheet is formed of the first adhesive layer, the portion can be favorably fixed.

Preferably, the central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer.

According to the above configuration, the semiconductor can be firmly fixed by the surface including only the first adhesive layer. Body wafer or pedestal. The semiconductor wafer or the susceptor can be favorably fixed by the surface having the first adhesive layer and the second layer.

Further, since the first adhesive layer is formed on the peripheral portion in the peripheral portion, the first adhesive layer can be easily cut or the adhesion of the first adhesive layer can be lowered, and the separation can be easily performed.

It is preferable that the above-mentioned succeeding sheet is formed such that the central portion further inside than the peripheral portion is formed by the second layer. According to the above configuration, the semiconductor wafer or the susceptor can be favorably fixed by the surface having the first adhesive layer and the second layer.

Further, since the first adhesive layer is formed on the peripheral portion in the peripheral portion, the first adhesive layer can be easily cut or the adhesion of the first adhesive layer can be lowered, and the separation can be easily performed.

Further, it is preferable that the adhesive sheet is formed by laminating the first adhesive layer and the second layer.

Further, a fifth aspect of the invention relates to a method of manufacturing a semiconductor device, comprising: a step of fixing a semiconductor wafer on a susceptor using the above-described semiconductor device manufacturing tab; and separating the susceptor from the semiconductor wafer step.

According to the first aspect of the invention, the semiconductor wafer can be firmly fixed to the susceptor, and the susceptor can be easily separated from the semiconductor wafer.

1‧‧‧Base

2‧‧‧Base

3‧‧‧Semiconductor wafer

4‧‧‧Semiconductor wafer

5‧‧‧Next film

6‧‧‧Next film

7‧‧‧Next film

12‧‧‧Substrate

13‧‧‧Next film (a)

14‧‧‧ spacer

22‧‧‧Substrate

23‧‧‧Next film (b)

24‧‧‧ spacer

31‧‧‧ Pedestal

32‧‧‧Base

33‧‧‧Base

34‧‧‧Base

35‧‧‧Base

42‧‧‧Semiconductor wafer

43‧‧‧Semiconductor wafer

44‧‧‧Semiconductor wafer

45‧‧‧Semiconductor wafer

50‧‧‧1st adhesive layer

51‧‧‧2nd floor

53‧‧‧Central Department

54‧‧‧ peripherals

55‧‧‧3rd floor

56‧‧‧through holes

57‧‧‧ Construct

60‧‧‧1st adhesive layer

61‧‧‧2nd floor

63‧‧‧Central Department

64‧‧‧The surrounding department

65‧‧‧3rd floor

66‧‧‧through holes

70‧‧‧1st adhesive layer

71‧‧‧2nd floor

73‧‧‧Central Department

74‧‧‧ peripherals

75‧‧‧3rd floor

80‧‧‧ adhesive layer

81‧‧‧ Temporary fixing sheet

99‧‧‧ incision

101‧‧‧ incision

102‧‧‧ incision

103‧‧‧Incision

104‧‧‧Incision

105‧‧‧ incision

D1‧‧‧ The distance between the end of the susceptor 1 and the end of the temporary fixing sheet 81 in the lateral direction (the horizontal direction of the surface of the susceptor 1)

D2‧‧‧The distance between the end of the base 1 and the inclined face of the base 1 in the lateral direction

D3‧‧‧ The distance between the end of the semiconductor wafer 3 and the end of the temporary fixing sheet 81 in the lateral direction (the horizontal direction of the surface of the semiconductor wafer 3)

D4‧‧‧ The distance between the end of the semiconductor wafer 3 and the slope of the semiconductor wafer 3 at the starting position in the lateral direction

Fig. 1 is a schematic cross-sectional view showing a sheet of the first embodiment of the first invention.

Fig. 2 is a plan view showing a sheet of the first embodiment of the first invention.

Fig. 3 is a cross-sectional schematic view showing a sheet of the second embodiment of the first invention.

Fig. 4 is a plan view showing a sheet of the second embodiment of the first invention.

Fig. 5 is a schematic cross-sectional view showing a third layer of the first sheet of the present invention.

Fig. 6 is a schematic cross-sectional view showing a third layer of the first sheet of the present invention.

Fig. 7 is a schematic view showing a state in which a semiconductor wafer is fixed to a susceptor by using the bonding sheet of the first embodiment of the first invention.

Fig. 8 is a cross-sectional schematic view showing the succeeding film of the first embodiment of the present invention.

Fig. 9 is a schematic cross-sectional view showing the succeeding film of the second embodiment of the present invention.

Fig. 10 is a schematic view showing a state in which a semiconductor wafer is attached to a bonding sheet according to Embodiment 1 of the 2-1st invention.

Fig. 11 is a schematic view showing a state in which a semiconductor wafer is fixed to a susceptor by using the bonding sheet of the first embodiment of the 2-1st invention.

Fig. 12 is a schematic cross-sectional view showing the second sheet (a) of the second invention.

Fig. 13 is a schematic view showing a state in which a semiconductor wafer is attached to the succeeding film (a) of the second invention.

Fig. 14 is a schematic cross-sectional view showing the second sheet (b) of the second invention.

Fig. 15 is a schematic view showing a state in which a susceptor is attached to the succeeding sheet (b) of the second aspect of the present invention.

Fig. 16 is a schematic view showing a state in which the semiconductor wafer is fixed to the susceptor by using the bonding sheets (a) and (b) of the second aspect of the present invention.

Figure 17 is a cross-sectional view of a temporary fixing sheet which can be used in the third invention.

Fig. 18 is a view showing a state in which a semiconductor wafer is attached to a sheet for temporary fixing.

Fig. 19 is a view showing a state in which an adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor.

Fig. 20 (a) is a view showing a state in which an adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor. (b) An enlarged view of the periphery of the inclined surface of the base.

Fig. 21 (a) is a view showing a state in which an adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor. (b) is an enlarged view of the periphery of the slope of the semiconductor wafer.

Fig. 22 is a view showing a state in which a slit is cut out on a sheet for temporary fixation.

Figure 23 is a cross-sectional view of a temporary fixing sheet having a concave portion.

Figure 24 is a schematic cross-sectional view of a film which can be used in the 4-1st invention.

Figure 25 is a plan view of a sheet which can be used in the 4-1st invention.

Figure 26 is a schematic cross-sectional view of a sheet which can be used in the 4-1st invention.

Fig. 27 is a schematic view showing a state in which the semiconductor wafer is fixed to the susceptor in the 4-1th invention.

Fig. 28 is a schematic view showing a state in which the first adhesive layer is cut in the 4-1th invention.

Figure 29 is a schematic cross-sectional view of a sheet which can be used in the 4th-2th invention.

Figure 30 is a plan view of a back sheet which can be used in the 4th-2th invention.

Figure 31 is a schematic cross-sectional view of a sheet which can be used in the 4th-2th invention.

Fig. 32 is a schematic view showing a state in which the first adhesive layer is cut in the fourth invention of the present invention.

Figure 33 is a schematic cross-sectional view of a sheet which can be used in the 4th to 3rd invention.

Figure 34 is a schematic cross-sectional view of a sheet which can be used in the 4th to 3rd invention.

Fig. 35 is a schematic view showing a state in which a semiconductor wafer is attached to a bonding sheet in the fourth invention of the present invention.

Fig. 36 is a schematic view showing a state in which the semiconductor wafer is fixed to the susceptor in the fourth invention of the present invention.

Fig. 37 is a schematic view showing a state in which a slit is cut at the boundary between the first adhesive layer and the second layer in the fourth invention of the present invention.

Figure 38 is a schematic cross-sectional view of a sheet (a) which can be used in the 4th-4th invention.

Fig. 39 is a schematic view showing a state in which a semiconductor wafer is attached to a bonding sheet (a).

Figure 40 is a cross-sectional schematic view of a back sheet (b) which can be used in the 4th-4th invention.

Fig. 41 is a schematic view showing a state in which a susceptor is attached to the succeeding sheet (b).

Fig. 42 is a schematic view showing a state in which the semiconductor wafer is fixed to the susceptor by using the bonding sheets (a) and (b).

Fig. 43 is a schematic view showing a state in which a slit is cut at the boundary between the succeeding sheet (a) and the succeeding sheet (b).

Figure 44 is a cross-sectional view of a temporary fixing sheet which can be used in the 4th to 5th invention.

Fig. 45 is a view showing a state in which a semiconductor wafer is attached to a sheet for temporary fixing.

Fig. 46 is a view showing a state in which a temporary fixing adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor.

Fig. 47 (a) is a view showing a state in which a temporary fixing adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor. (b) An enlarged view of the periphery of the inclined surface of the base.

Fig. 48 (a) is a view showing a state in which a temporary fixing adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor. (b) is an enlarged view of the periphery of the slope of the semiconductor wafer.

Fig. 49 is a view showing a state in which a slit is cut out on a sheet for temporary fixation.

Fig. 50 is a cross-sectional view showing a sheet for temporary fixing having a concave portion.

Figure 51 is a cross-sectional view showing a sheet of the first embodiment of the fifth invention.

Figure 52 is a plan view showing a sheet of the first embodiment of the fifth invention.

Fig. 53 is a plan view showing a structure having a large number of through holes.

Fig. 54 is a cross-sectional view showing a sheet having a third layer.

Figure 55 is a cross-sectional view showing a sheet of the second embodiment of the fifth invention.

Fig. 56 is a plan view showing a sheet of the second embodiment of the fifth invention.

Figure 57 is a cross-sectional view showing a sheet of the third embodiment of the fifth invention.

Fig. 58 is a schematic view showing a state in which a semiconductor wafer is fixed to a susceptor by using the bonding sheet of the first embodiment of the fifth invention.

<<The first invention>> [Next film]

The adhesive sheet for manufacturing a semiconductor device according to the first aspect of the invention includes a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer, and at least the peripheral portion of the semiconductor device manufacturing succeeding sheet is 1 The adhesive layer is formed.

Hereinafter, the back sheet of the first invention will be described with reference to the drawings.

Fig. 1 is a schematic cross-sectional view showing a sheet 5 of the first embodiment. As shown in Figure 1, the next piece 5 The peripheral portion 54 is formed of the first adhesive layer 50, and the central portion 53 that is further inside than the peripheral portion 54 is formed of a laminate of the first adhesive layer 50 and the second layer 51. That is, the succeeding sheet 5 has the second layer 51 and the first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51. The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50.

Next, the peripheral portion 54 of the sheet 5 is formed of the first adhesive layer 50. Then, the first adhesive layer 50 having a higher force than the second layer 51 is present in the peripheral portion 54, so that the semiconductor wafer can be firmly fixed to the susceptor at this portion.

Further, since the first adhesive layer 50 is provided and the second layer 51 having a lower adhesive force than the first adhesive layer 50 is provided, the susceptor can be pedestal by an external force as long as the adhesion of the first adhesive layer 50 is lowered. The semiconductor wafer is easily separated.

Then, in the sheet 5, the first adhesive layer 50 is formed on the peripheral portion 54 of the adhesive sheet 5. Therefore, the first adhesive layer 50 is dissolved in a solvent, or the slit is physically cut by a cutter or a laser, and the number is easily lowered. 1 The adhesion of the adhesive layer 50 facilitates separation of the susceptor from the semiconductor wafer.

Next, the central portion 53 of the sheet 5 which is further inside than the peripheral portion 54 is formed of a laminate of the first adhesive layer 50 and the second layer 51. The semiconductor wafer or the susceptor can be firmly fixed by the surface on which only the first adhesive layer 50 is exposed. Further, since the central portion 53 is formed of a laminate of the first adhesive layer 50 and the second layer 51, the adhesion force of the central portion 53 is relatively lower than that of the peripheral portion 54 formed only by the first adhesive layer 50. Therefore, if at least the adhesion of the peripheral portion 54 is lowered, the susceptor can be easily separated from the semiconductor wafer by an external force. Further, when the second layer 51 is in contact with the susceptor, the adhesive sheet 5 is easily peeled off from the susceptor, and the paste remains small, and the susceptor can be easily recovered.

The thickness of the sheet 5 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. When it is 10 μm or more, the unevenness on the surface of the semiconductor wafer device can be followed, and the adhesive sheet can be filled without a gap. Further, the thickness of the succeeding sheet 5 is, for example, 500 μm or less, preferably 300 μm or less. If it is 500 μm or less, unevenness or heating of the thickness can be suppressed or prevented. The contraction of time ̇ swells.

The thickness of the first adhesive layer 50 of the central portion 53 can be appropriately set, and is preferably 0.1 μm or more, more preferably 0.5 μm or more, and still more preferably 1 μm or more. Further, the thickness is preferably 300 μm or less, more preferably 200 μm or less.

Further, the thickness of the second layer 51 of the central portion 53 can be appropriately set.

Since the first adhesive layer has a modulus of elasticity lower than that of the second layer, it is easy to cause undulation on the surface when formed. From the above viewpoints, it is preferred that the first adhesive layer be thin and the second layer be thick. On the other hand, since the glass transition temperature of the first adhesive layer is generally higher than that of the second layer, the shrinkage at the time of formation is large. From the above viewpoints, it is preferred that the first adhesive layer be thick and the second layer be thin.

Fig. 2 is a plan view showing a sheet 5 of the first embodiment. As shown in FIG. 2, the shape of the succeeding piece 5 is circular in plan view.

The diameter of the sheet 5 is not particularly limited. For example, the diameter of the sheet 5 is preferably +1.0 to -1.0 mm with respect to the diameter of the susceptor.

Further, when the succeeding sheet 5 is viewed in plan, the shape of the second layer 51 is circular. The area of the second layer 51 in the plan view of the sheet 5 is preferably 10% or more, more preferably 20% or more, and still more preferably 50% or more with respect to the area of the sheet 5 when the sheet 5 is viewed from above. When it is 10% or more, it is easy to reduce the adhesion force of the first adhesive layer 50 formed in the peripheral portion 54, and it is easy to separate the susceptor from the semiconductor wafer. Further, the area of the second layer 51 is preferably 99.95% or less, more preferably 99.9% or less. If it is 99.95% or less, the semiconductor wafer can be firmly fixed to the susceptor.

The adhesive sheet of the first aspect of the invention is not limited to the adhesive sheet 5 of the first embodiment. Fig. 3 is a schematic cross-sectional view showing a sheet of the second embodiment. As shown in FIG. 3, the succeeding sheet 6 is formed by the first adhesive layer 60, and the central portion 63 which is further inside than the peripheral portion 64 is formed by the second layer 61. The adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60.

Next, the sheet 6 is formed on the inner side 63 of the inner side of the peripheral portion 64 by the second layer 61. due to Since the central portion 63 is formed by the second layer 61, if the adhesion of the first adhesive layer 60 existing in the peripheral portion 64 is lowered, the susceptor can be easily separated from the semiconductor wafer by an external force. Further, since the second layer 61 is in contact with the susceptor, the adhesive sheet 6 is easily peeled off from the susceptor, and the paste remains small, and the susceptor can be easily recovered.

The thickness of the sheet 6 is not particularly limited, and is, for example, the same as those exemplified in the sheet 5 of the first embodiment.

Fig. 4 is a plan view showing a sheet 6 of the second embodiment. As shown in FIG. 4, the shape of the succeeding sheet 6 is circular in plan view. The diameter of the sheet 6 is not particularly limited, and is, for example, the same as those exemplified in the sheet 5 of the first embodiment. Further, the area of the second layer 61 when the sheet 6 is viewed in plan is not particularly limited, and is, for example, the same as those exemplified in the sheet 5 of the first embodiment.

The adhesion of the second layers 51 and 61 is not particularly limited as long as it is lower than the adhesion of the first adhesive layers 50 and 60. Regarding the adhesion force of the second layer 51, 61, for example, the temperature of 23 ± 2 ° C, the peeling speed of 300 mm / min, the 90 ° peeling peeling force for the silicon wafer is preferably less than 0.30 N / 20 mm, more preferably 0.20N/20mm or less. If it is less than 0.30 N/20 mm, the second layer 51, 61 can be easily peeled off. The lower limit of the 90° peeling peeling force is not particularly limited, and is, for example, 0 N/20 mm or more, preferably 0.001 N/20 mm or more. The lower the 90° peeling peeling force, the easier it is to peel off the second layers 51 and 61.

With respect to the adhesion force of the first adhesive layers 50 and 60, for example, a temperature of 23±2° C. and a peeling speed of 300 mm/min, the 90° peeling peeling force for the tantalum wafer is preferably 0.30 N/20 mm or more, more preferably It is 0.40N/20mm or more. When it is 0.30 N/20 mm or more, the semiconductor wafer can be favorably held on the susceptor, and back surface polishing or the like can be favorably performed. Further, the upper limit of the 90° peeling peeling force is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

As shown in Figs. 5 and 6, the first sheet of the present invention may be formed with other layers. 5 and 6 are schematic cross-sectional views of the succeeding film of the third layer. The back sheet 5 of FIG. 5 is formed with a third layer 55 over the peripheral portion 54 and the central portion 53. The backing sheet 6 of FIG. 6 is spread over the peripheral portion 64 and The third layer 65 is formed in the central portion 63. By attaching the exposed surface of the third layer 55, 65 having a lower adhesive force than the first adhesive layers 50, 60 to the semiconductor wafer, the adhesive sheets 5, 6 to which the third layer 55, 65 are attached can be self-contained. The semiconductor wafer is easily peeled off. Moreover, the paste residue of the semiconductor wafer can be eliminated, and the semiconductor wafer cleaning step can be omitted.

The adhesion of the third layers 55 and 65 is not particularly limited as long as it is lower than the adhesion of the first adhesive layers 50 and 60. For example, the 90° peeling peeling force for the tantalum wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably less than 0.30 N/20 mm, more preferably 0.20 N/20 mm or less. If it is less than 0.30 N/20 mm, it can be peeled off without a paste, and the washing step of a semiconductor wafer or the like can be omitted. Further, the lower limit of the 90° peeling peeling force is not particularly limited, and is, for example, 0 N/20 mm or more, and preferably 0.001 N/20 mm or more. If it is 0 N/20 mm or more, the semiconductor wafer can be favorably held on the susceptor.

The adhesive composition constituting the first adhesive layers 50 and 60 is not particularly limited as long as the adhesion of the first adhesive layers 50 and 60 is higher than the adhesion of the second layers 51 and 61. .

As the adhesive composition constituting the first adhesive layers 50 and 60, a polyimide resin having a quinone imine group and having a constituent unit derived from at least a part of a diamine having an ether structure can be preferably used. Further, a polyoxynoxy resin can also be preferably used. Among them, the above polyimine resin is preferred in terms of heat resistance, drug resistance, and paste residue.

The above polyimine resin can be usually obtained by ruthenium imidization (dehydration condensation) of polylysine as its precursor. As a method of ruthenium imidizing polylysine, for example, a conventionally known heating hydrazine imidation method, azeotropic dehydration method, chemical hydrazine imidation method, or the like can be employed. Among them, a heated hydrazine imidation method is preferred. In the case of the heated hydrazine imidation method, in order to prevent deterioration caused by oxidation of the polyimide resin, it is preferred to carry out heat treatment under a nitrogen atmosphere or an inert atmosphere such as vacuum.

The above polylysine may be added to an acid anhydride and a diamine (including a diamine having an ether structure and a second having no ether structure) in a substantially selected molar ratio in a solvent selected to be appropriately selected. Both amines are obtained by reacting.

The diamine having an ether structure is not particularly limited as long as it has a ether structure and has at least two compounds having an amine structure. For example, a diamine having a diol skeleton or the like can be mentioned.

Examples of the diamine having a diol skeleton include a diamine having a polypropylene glycol structure and having one amine group at each terminal, a polyethylene glycol structure, and one amine group at each end. A diamine having an alkylene glycol such as an amine or a diamine having a polyether diol structure and having one amine group at both ends. Further, a diamine having a plurality of such diol structures and having one amine group at each end may be mentioned.

The molecular weight of the above diamine having an ether structure is preferably in the range of from 100 to 5,000, more preferably from 150 to 4,800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5,000, the first adhesive layers 50 and 60 having a high adhesion at a low temperature and having releasability at a high temperature are easily obtained.

In the formation of the above polyimine resin, in addition to the diamine having an ether structure, a diamine having no ether structure may be used in combination. Examples of the diamine having no ether structure include an aliphatic diamine or an aromatic diamine. By using a diamine having no ether structure in combination, the adhesion to the adherend can be controlled. The blending ratio of the diamine having an ether structure to the diamine having no ether structure is preferably in the range of 100:0 to 10:90, more preferably 100:0 to 20:80, more preferably in the molar ratio. 99:1~30:70. When the ratio of the above-described diamine having an ether structure to the above-described diamine having no ether structure is in the range of 100:0 to 10:90 in terms of a molar ratio, the thermal peeling property at a high temperature is further excellent.

Examples of the above aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-diaminooctane, 1,10-diaminodecane, and 1,12-diamine-10- Dioxane, 4,9-dioxa-1,12-diaminododecane, 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldioxine An alkane (α, ω-diaminopropyl tetramethyldioxane) or the like. The molecular weight of the above aliphatic diamine is usually from 50 to 1,000,000, preferably from 100 to 30,000.

Examples of the aromatic diamine include 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, and m-phenylenediamine. , p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3' -diaminodiphenyl sulfide, 4,4'-diaminodiphenylanthracene, 3,3'-diaminodiphenylanthracene, 1,4-bis(4-aminophenoxy) Benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)-2 , 2-dimethylpropane, 4,4'-diaminobenzophenone, and the like. The molecular weight of the above aromatic diamine is usually from 50 to 1,000, preferably from 100 to 500. The molecular weight of the above-mentioned aliphatic diamine and the molecular weight of the above aromatic diamine are values (weight average molecular weight) calculated by GPC (Gel Permeation Chromatography) and calculated in terms of polystyrene.

Examples of the acid anhydride include 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, and 3,3',4. , 4'-benzophenone tetracarboxylic dianhydride, 2,2',3,3'-benzophenonetetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2, 2-bis(2,3-dicarboxyphenyl)hexafluoropropane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA), double (2,3-di) Carboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)ruthenic anhydride, bis(3,4-dicarboxyphenyl)anthracene Di-anhydride, pyromellitic dianhydride, ethylene glycol trimellitic acid dianhydride, and the like. These may be used alone or in combination of two or more.

Examples of the solvent for reacting the above acid anhydride with the above diamine include N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N,N-dimethylformamide, and cyclopentanone. Wait. These may be used singly or in combination of plural kinds. Further, in order to adjust the solubility of the raw material or the resin, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.

Examples of the polyoxyxylene resin include a peroxide cross-linking type polyoxynoxy adhesive, an addition reaction type polyoxynoxy adhesive, a dehydrogenation type polyoxynoxy adhesive, and a moisture hardening type polymerization. Oxygen-based adhesives, etc. The above polysiloxane resin may be used singly or in combination of two or more. When the above polyoxyxylene resin is used, the heat resistance is high, and the storage modulus or adhesion at a high temperature can be an appropriate value. In the above polyoxyl resin, there is less impurity In the surface, an addition reaction type polyoxynoxy adhesive is preferred.

The adhesive composition constituting the first adhesive layers 50 and 60 may also contain other additives. Examples of such other additives include a flame retardant, a decane coupling agent, and an ion scavenger. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-glycidoxypropylmethyl group. Diethoxydecane, etc. Examples of the ion scavenger include hydrotalcites, barium hydroxide, and the like. These other additives may be used alone or in combination of two or more.

The material constituting the second layers 51 and 61 is not particularly limited as long as the adhesion of the second layers 51 and 61 is lower than the adhesion of the first adhesive layers 50 and 60. Examples of the material constituting the second layers 51 and 61 include inorganic materials such as Cu, Cr, Ni, and Ti. Further, the above polyimine resin and the above polyoxyxylene resin may also be used.

The material constituting the third layers 55 and 65 is not particularly limited as long as the adhesion of the third layers 55 and 65 is lower than the adhesion of the first adhesive layers 50 and 60. For example, The second layer 51, 61 is the same.

(following the manufacture of the film)

The sheet 5 is then produced, for example, in the following manner. First, a solution containing a material for forming the second layer 51 is produced. Then, the coating solution is applied onto a substrate to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form a second layer 51. As the substrate, SUS304, 6-4 alloy, metal foil such as aluminum foil, copper foil, or Ni foil; polyethylene terephthalate (PET), polyethylene, polypropylene; or fluorine-based release agent can be used. A plastic film or paper which has been surface-coated with a release agent such as a long-chain alkyl acrylate release agent. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and spin coating.

Then, the second layer 51 is punched into a specific shape (for example, a circular shape or a rectangular shape) by punching or the like, and the punched portion (the second layer 51 such as a circular shape or a rectangular shape) is left. Side peeling and removal.

On the other hand, a solution containing the composition for forming the first adhesive layer 50 is prepared.

Then, on the substrate on which the second layer 51 having a specific shape is formed by lamination, the composition for forming the first adhesive layer 50 is applied to the second layer 51 side so as to have a specific thickness. The solution was formed to form a coating film. Thereafter, the coating film is dried under specific conditions to form the first adhesive layer 50. From the above, the adhesive sheet 5 shown in Figs. Further, the adhesive sheet 6 shown in Figs. 3 and 4 can be produced by substantially the same method as the adhesive sheet 5.

Further, the third layers 55 and 65 shown in Figs. 5 and 6 can be formed by the same method as the second layer 51.

In the above description, the succeeding sheets 5 and 6 having a circular shape in plan view have been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or an elliptical shape.

Moreover, the back sheets 5 and 6 in which the shapes of the second layers 51 and 61 are circular in plan view are described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or an elliptical shape.

The succeeding film for manufacturing a semiconductor device according to the first aspect of the invention is for fixing a semiconductor wafer to a susceptor. Specifically, it can be preferably used in a method of manufacturing a semiconductor device to be described later.

[Method of Manufacturing Semiconductor Device]

A method of manufacturing a semiconductor device according to a first aspect of the invention includes the steps of: fixing a semiconductor wafer to a susceptor using a bonding sheet; and separating the susceptor from the semiconductor wafer. For example, there may be mentioned a method comprising the steps of: fixing a semiconductor wafer to a susceptor using a bonding sheet; performing a back grinding step on the semiconductor wafer; and separating the susceptor from the back-grinded semiconductor wafer.

In the following description, the case where the back sheet 5 of the first embodiment is used will be described. Fig. 7 is a schematic view showing a state in which a semiconductor wafer is fixed to a susceptor by using the bonding sheet of the first embodiment.

First, a step of fixing the semiconductor wafer 3 to the susceptor 1 using the bonding sheet 5 is performed. Specifically, the surface on which the first adhesive layer 50 and the second layer 51 of the adhesive sheet 5 are exposed is attached to the susceptor 1, and the surface on which only the first adhesive layer 50 of the adhesive sheet 5 is exposed is attached to the semiconductor. The circuit of the wafer 3 is formed on the surface.

The semiconductor wafer 3 is not particularly limited, and examples thereof include a germanium wafer, a gallium-arsenic wafer, a gallium-phosphorus wafer, a gallium-arsenic-aluminum wafer, and a compound semiconductor wafer such as a sapphire wafer. Among them, a germanium wafer is preferred.

As the semiconductor wafer 3, a circuit forming surface and a non-circuit forming surface are used. Further, a person having a through-silicon via can be preferably used. The reason for this is that the germanium wafer having the germanium through electrode is generally thinned by back surface polishing to be described later, and therefore it is preferable to be fixed to the susceptor 1 to increase the strength.

The thickness of the semiconductor wafer 3 is not particularly limited and is, for example, 400 to 1200 μm, preferably 450 to 1000 μm.

The diameter of the semiconductor wafer 3 is not particularly limited and is, for example, 75 to 450 mm. As such a semiconductor wafer 3, a commercially available 200 mm wafer, a 300 mm wafer, or the like can be used.

The susceptor 1 is not particularly limited, and examples thereof include a compound wafer such as a ruthenium wafer, a SiC wafer, and a GaAs wafer; a glass wafer, SUS, a 6-4 alloy, and a metal foil such as a Ni foil or an Al foil. In the case of a circular shape in a plan view, it is preferably a tantalum wafer or a glass wafer. Further, in the case of a rectangular shape in a plan view, a SUS plate or a glass plate is preferable.

Further, as the susceptor 1, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, or the like can be used. Polyolefins such as homopolypropylene, polybutene, polymethylpentene; ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (none , alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyester; polycarbonate Ester, polyimide, polyetheretherketone, polyimide, polyetherimide, Polyamide, fully aromatic polyamine, polyphenylene sulfide, aromatic polyamide (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyfluorene Oxygen resin, paper, etc.

The susceptor 1 may be used alone or in combination of two or more. The thickness of the susceptor 1 is not particularly limited, and is, for example, usually about 10 μm to 20 mm.

The diameter of the susceptor 1 is not particularly limited and is, for example, 75 to 450 mm, preferably 100 to 450 mm. As such a susceptor 1, a commercially available 200 mm wafer, a 300 mm wafer, or the like can be used.

The attaching (fixing) method is not particularly limited, and is preferably crimping. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are, for example, preferably 20 to 300 ° C, 0.001 to 10 MPa, and 0.001 to 10 mm/sec. The crimping time is usually 0.1 to 10 minutes.

After the pressure bonding, the first adhesive layer 50 and the second layer 51 are imidized as needed. Thereby, the semiconductor wafer 3 can be well fixed to the susceptor 1. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the first adhesive layer 50 and the second layer 51 may be imidized.

Then, the semiconductor wafer 3 is back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 3 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After the back grinding or processing or the like, the susceptor 1 is separated from the semiconductor wafer 3.

The method of separating the susceptor 1 from the semiconductor wafer 3 is not particularly limited, and is preferably. The separation is performed after the adhesion of the first adhesive layer 50 existing in the peripheral portion 54 is lowered. Thereby, it can be easily separated. As a method of lowering the adhesion force of the first adhesive layer 50, a method of reducing the adhesion force by dissolving the first adhesive layer 50 in a solvent is used, and the first adhesive layer 50 is physically used by a cutter or a laser. A method of cutting out the slit to reduce the adhesion force; a method of forming the first adhesive layer 50 by a material whose heating force is lowered by heating, and reducing the adhesion force by heating, or the like is used in advance.

In the above description, as a method of fixing the semiconductor wafer 3 to the susceptor 1 by using the adhesive sheet 5, the surface on which the first adhesive layer 50 and the second layer 51 of the adhesive sheet 5 are exposed is attached to the susceptor 1. A method in which only the surface on which the first adhesive layer 50 of the sheet 5 is exposed is attached to the circuit formation surface of the semiconductor wafer 3 has been described. However, the method of fixing the semiconductor wafer 3 to the susceptor 1 by using the bonding sheet 5 is not particularly limited, and the surface on which only the first adhesive layer 50 of the bonding sheet 5 is exposed may be attached to the susceptor 1 and A method of attaching the exposed surface of the first adhesive layer 50 and the second layer 51 of the bonding sheet 5 to the circuit formation surface of the semiconductor wafer 3, and the like.

Moreover, the case where the circuit formation surface and the non-circuit formation surface are used as the semiconductor wafer 3 has been described. However, it is not limited to those having a circuit forming surface and a non-circuit forming surface, and may be a non-circuit forming surface on both sides.

Moreover, the case where the semiconductor wafer 3 fixed to the susceptor 1 is back-polished is demonstrated. However, it is not necessary to perform back grinding, and the semiconductor wafer 3 may be processed without back grinding.

<<2nd invention>>

Hereinafter, the second invention (the 2-1st invention and the 2nd invention) will be described with respect to the first invention.

An object of the second aspect of the invention is to provide an adhesive sheet for manufacturing a semiconductor device which can securely fix a semiconductor wafer on a susceptor and easily separate the susceptor from the semiconductor wafer. Further, a second object of the present invention is to provide a method of manufacturing a semiconductor device which can secure a semiconductor wafer to a susceptor and can easily suscept the susceptor from the semiconductor wafer. Ground separation.

[Next film]

In the second aspect of the invention, the semiconductor device for manufacturing a semiconductor device of the present invention has a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer.

Hereinafter, the back sheet of the 2-1st invention will be described with reference to the drawings.

Fig. 8 is a schematic cross-sectional view showing the back sheet 7 of the first embodiment. As shown in FIG. 8, the succeeding sheet 7 is formed by laminating the first adhesive layer 70 and the second layer 71. The adhesion of the second layer 71 is lower than the adhesion of the first adhesive layer 70.

Since the sheet 7 has the first adhesive layer 70, the semiconductor wafer can be favorably fixed to the susceptor. Further, since the second layer 71 having a lower adhesive force than the first adhesive layer 70 is provided, the susceptor can be easily separated from the semiconductor wafer by an external force.

The thickness of the first adhesive layer 70 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. When it is 10 μm or more, the unevenness on the surface of the semiconductor wafer can be followed, and the adhesive sheet 7 can be filled without any gap. Further, the thickness of the first adhesive layer 70 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage enthalpy during heating can be suppressed or prevented.

The thickness of the second layer 71 is not particularly limited, and is, for example, 1 μm or more, and preferably 5 μm or more. When it is 1 μm or more, it is easy to bond with the susceptor. Further, the thickness of the second layer 71 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage enthalpy during heating can be suppressed or prevented.

Further, the shape when the sheet 7 is viewed in plan is not particularly limited, and is generally circular.

The adhesion of the second layer 71 is not particularly limited as long as it is lower than the adhesion of the first adhesive layer 70. Regarding the adhesion force of the second layer 71, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the silicon wafer is preferably less than 0.30 N/20 mm, more preferably 0.20. N/20mm or less. If it is less than 0.30 N/20 mm, the susceptor can be easily separated from the semiconductor wafer. On the other hand, the lower limit of the 90° peeling peeling force is preferably It is 0.001 N/20 mm or more, more preferably 0.005 N/20 mm or more, further preferably 0.010 N/20 mm or more. When it is 0.001 N/20 mm or more, the semiconductor wafer can be favorably fixed to the susceptor, and back surface polishing or the like can be satisfactorily performed.

The 90° peeling peeling force for the tantalum wafer under the conditions of the adhesion force of the first adhesive layer 70, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min is preferably 0.30 N/20 mm or more, more preferably 0.40N/20mm or more. When it is 0.30 N/20 mm or more, the semiconductor wafer can be favorably fixed to the susceptor, and back surface polishing or the like can be favorably performed. Further, the upper limit of the 90° peeling peeling force is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

As shown in Fig. 9, the 224th sheet of the present invention may be formed by other layers (Embodiment 2). Fig. 9 is a schematic cross-sectional view showing a sheet having a third layer. The adhesive sheet 7 of Fig. 9 is formed by laminating the third layer 75, the second layer 71, and the first adhesive layer 70.

The adhesion of the third layer 75 is preferably lower than the adhesion of the first adhesive layer 70. Thereby, when the third layer 75 of the adhesive sheet 7 is attached to the susceptor, the adhesive sheet 7 can be easily peeled off from the susceptor. Further, the paste residue of the susceptor can be eliminated, and the cleaning step of the susceptor can be omitted.

Regarding the adhesion force of the third layer 75, the 90° peeling peeling force for the germanium wafer under the conditions of the temperature of 23±2° C. and the peeling speed of 300 mm/min is preferably less than 0.30 N/20 mm, more preferably 0.20 N. /20mm or less. If it is less than 0.30 N/20 mm, the adhesive sheet 7 can be easily peeled off. Further, the paste residue such as the susceptor can be eliminated, and the cleaning step of the susceptor or the like can be omitted. On the other hand, the lower limit of the 90° peeling peeling force is preferably 0.001 N/20 mm or more. When it is 0.001 N/20 mm or more, the semiconductor wafer can be favorably fixed to the susceptor, and back surface polishing or the like can be satisfactorily performed.

The adhesive composition constituting the first adhesive layer 70 is not particularly limited as long as the adhesion of the first adhesive layer 70 is higher than the adhesion of the second layer 71. As the adhesive composition constituting the first adhesive layer 70, the first invention can be preferably used. Description of polyimine resin, polyoxyn resin. Among them, in terms of heat resistance, drug resistance, and paste residue, a polyimide resin is preferred.

The material constituting the second layer 71 is not particularly limited as long as the adhesion of the second layer 71 is lower than the adhesion of the first adhesive layer 70. As the material constituting the second layer 71, the above polyimine resin and the above polyoxyxylene resin can also be used. Among them, the above-mentioned polyimine resin is preferred in terms of heat resistance, drug resistance, and paste residue.

The material constituting the third layer 75 is not particularly limited as long as the adhesion of the third layer 75 is lower than the adhesion of the first adhesive layer 70, and examples thereof include those exemplified in the second layer 71. .

(following the manufacture of the film)

Next, the sheet 7 is produced, for example, in the following manner. First, a solution containing a material for forming the second layer 71 is produced. Then, the coating solution is applied to the substrate so as to have a specific thickness to form a coating film, and then the coating film is dried under specific conditions to form the second layer 71. As the substrate, SUS304, 6-4 alloy, metal foil such as aluminum foil, copper foil, or Ni foil; polyethylene terephthalate (PET), polyethylene, polypropylene; or fluorine-based release agent can be used. A plastic film or paper surface-coated with a release agent such as a long-chain alkyl acrylate release agent. Further, the coating method is not particularly limited, and examples thereof include roll coating, screen coating, gravure coating, and spin coating.

On the other hand, a solution containing the composition for forming the first adhesive layer 70 is prepared.

Then, on the substrate on which the second layer 71 is laminated, a solution containing a composition for forming the first adhesive layer 70 is applied to the side of the second layer 71 so as to have a specific thickness to form a coating. membrane. Thereafter, the coating film is dried under specific conditions to form the first adhesive layer 70. According to the above, the succeeding sheet 7 shown in Fig. 8 is obtained.

Further, the third layer 75 shown in FIG. 9 can be formed by the same method as the second layer 71.

The second embodiment of the present invention for manufacturing a semiconductor device can be used to fix a semiconductor wafer to a susceptor. Specifically, it can be preferably used in the semiconductor package of the following 2-1th invention The manufacturing method.

[Method of Manufacturing Semiconductor Device]

The method of manufacturing a semiconductor device according to the second aspect of the present invention includes the steps of: fixing a semiconductor wafer on a susceptor using a bonding sheet; and separating the susceptor from the semiconductor wafer. As such a method, for example, a method of fixing a semiconductor wafer to a susceptor by attaching a semiconductor wafer to a first adhesive layer and attaching the susceptor to the second layer And the step of separating the susceptor from the semiconductor wafer. In the case of this method, the first adhesive layer can follow the irregularities on the surface of the semiconductor wafer, and the semiconductor wafer can be well fixed to the susceptor. On the other hand, since the second layer having a lower force than the first adhesive layer is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

In the following description, the case where the back sheet 7 of the first embodiment is used will be described. Fig. 10 is a schematic view showing a state in which a semiconductor wafer is attached to the succeeding film of the first embodiment. Fig. 11 is a schematic view showing a state in which a semiconductor wafer is fixed to a susceptor by using the bonding sheet of the first embodiment.

First, the circuit formation surface of the semiconductor wafer 3 is bonded to the first adhesive layer 70 (FIG. 10).

As the semiconductor wafer 3, the semiconductor wafer 3 described in the first aspect of the invention can be preferably used.

The bonding method (attachment method) is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

Further, when the area of the bonding sheet 7 is larger than the area of the semiconductor wafer 3, the bonding sheet 7 may be cut before or after bonding as needed.

Then, the susceptor 1 is attached to the second layer 71 (FIG. 11).

As the susceptor 1, the susceptor 1 described in the first aspect of the invention can be preferably used.

The bonding method (attachment method) is not particularly limited, and examples thereof include 23 to 250 ° C. The method of attaching at 0.01~10MPa.

Further, in the case where the area of the succeeding sheet 7 is larger than the area of the susceptor 1, the splicing sheet 7 may be cut as needed.

After bonding, the first adhesive layer 70 and the second layer 71 are imidized as needed. Thereby, the semiconductor wafer 3 can be well fixed to the susceptor 1. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the first adhesive layer 70 and the second layer 71 may be imidized.

Further, after bonding, the first adhesive layer 70 and the second layer 71 may be thermally cured as needed. When polyoxyxylene resin is used as the first adhesive layer 70 and the second layer 71, the semiconductor wafer 3 can be satisfactorily fixed to the susceptor 1 by thermal curing. Further, only one of the first adhesive layer 70 and the second layer 71 may be thermally cured.

Then, the semiconductor wafer 3 fixed on the susceptor 1 can be back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 3 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After the semiconductor wafer 3 is subjected to a process required for back grinding or processing, the susceptor 1 is separated from the semiconductor wafer 3.

The method of separating the susceptor 1 from the semiconductor wafer 3 is not particularly limited, and examples thereof include a method of applying an external force. Specifically, a method of separating only the susceptor 1 and a method of separating the second layer 71 with the susceptor 1 may be mentioned. Further, a method of separating the slits at the boundary between the first adhesive layer 70 and the second layer 71 and separating them is also preferable.

Furthermore, after lowering the adhesion of the first adhesive layer 70, the susceptor 1 can also be self-semiconductor Wafer 3 is separated. As a method of lowering the adhesion force of the first adhesive layer 70, a method of reducing the adhesion force by dissolving the first adhesive layer 70 in a solvent is used, and the first adhesive layer 70 is physically used by a cutter or a laser. a method of cutting out the slit to reduce the adhesion force; forming a first adhesive layer 70 by using a material whose adhesion is lowered with heating, and reducing the adhesion force by heating; and heating while performing the superheating in the presence of the surfactant A method of washing a sound wave; a method of allowing a chemical solution to permeate into the first adhesive layer 70 (for example, a method of performing SC-1 washing, a method of impregnating a solution of N-methyl-2-pyrrolidone or the like).

In the above description, a method of attaching the semiconductor wafer 3 to the first adhesive layer 70 and attaching the susceptor 1 to the second layer 71 has been described. However, the present invention is not limited thereto, and the susceptor 1 may be attached to the first adhesive layer 70 and the semiconductor wafer 3 may be attached to the second layer 71.

Moreover, the case where the circuit formation surface and the non-circuit formation surface are used as the semiconductor wafer 3 has been described. However, it is not limited to those having a circuit forming surface and a non-circuit forming surface, and may be a non-circuit forming surface on both sides.

[Manufacturing method of other semiconductor devices]

2-2. A method of manufacturing a semiconductor device according to the present invention, comprising: a step (A) of attaching a semiconductor wafer to a bonding sheet (a); and a step (B) of attaching a pedestal to the bonding sheet (b); The above-mentioned succeeding sheet (a) of the semiconductor wafer with the adhesive sheet (a) obtained by the above step (A), and the above-mentioned susceptor with the adhesive sheet (b) obtained by the above step (B) Next, the sheet (b) is bonded to the step (C). Further, one of the above-mentioned succeeding sheets (a) and (b) has a lower adhesion force than the other.

Since the adhesion of one of the bonding sheets (a) and (b) is lower than the other, it is easy to separate the susceptor from the semiconductor wafer. Further, since the adhesive sheet having a relatively high adhesion force is used, the semiconductor wafer can be favorably fixed to the susceptor.

The bonding force of the sheet (b) is then preferably lower than that of the above sheet (a). In this case, the adhesion strength of the succeeding sheet (a) is higher than that of the adhesive sheet (b), and the surface of the semiconductor wafer or the like is excellent. Therefore, the succeeding sheet (a) can follow the irregularities on the surface of the semiconductor wafer, so that half The conductor wafer is well fixed to the pedestal. On the other hand, since the adhesive force is lower than the contact sheet (b) of the adhesive sheet (a) and the susceptor, the adhesive sheet (b) is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

In the following description, the case where the adhesive force of the succeeding sheet (b) is lower than the above-described succeeding sheet (a) will be described.

Hereinafter, a method of manufacturing a semiconductor device according to the second aspect of the present invention will be described with reference to the drawings.

Figure 12 is a schematic cross-sectional view of the succeeding sheet (a). Fig. 13 is a schematic view showing a state in which a semiconductor wafer is attached to a bonding sheet (a). Figure 14 is a schematic cross-sectional view of the succeeding sheet (b). Fig. 15 is a schematic view showing a state in which a susceptor is attached to the succeeding sheet (b). Fig. 16 is a schematic view showing a state in which the semiconductor wafer is fixed to the susceptor by using the adhesive sheets (a) and (b).

Step (A)

In the step (A), the semiconductor wafer 4 is attached to the succeeding sheet (a) 13 (Fig. 13).

First, the succeeding sheet (a) 13 will be described. As shown in Fig. 12, the succeeding sheet (a) 13 has a substrate 12 on one side and a separator 14 on the other side.

The adhesive composition constituting the adhesive sheet (a) 13 is not particularly limited, and is preferably exemplified in the first adhesive layer 70.

With respect to the adhesion force of the bonding sheet (a) 13, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the germanium wafer is preferably 0.30 N/20 mm or more, more preferably 0.40N/20mm or more. When it is 0.30 N/20 mm or more, the semiconductor wafer 4 can be favorably fixed to the susceptor, and back surface polishing or the like can be satisfactorily performed. Further, the upper limit of the 90° peeling peeling force is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

Examples of the substrate 12 include SUS304 and 6-4 alloys; metal foils such as aluminum foil, copper foil, and Ni foil; polyethylene terephthalate (PET), polyethylene, and polypropylene; or fluorine-based peeling. Surface release coating of a release agent such as a long-chain alkyl acrylate release agent Plastic film or paper.

Examples of the separator 14 include polyethylene terephthalate (PET), polyethylene, and polypropylene, or surface coating using a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent. Plastic film or paper.

The semiconductor wafer 4 is not particularly limited, and the semiconductor wafer 3 described in the first aspect of the invention can be preferably used.

In the step A, the separator 14 is peeled off and the semiconductor wafer 4 is attached to the succeeding sheet (a) 13.

The attachment method is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

Further, in the case where the area of the bonding sheet (a) 13 is larger than the area of the semiconductor wafer 4, the bonding sheet (a) 13 may be cut before or after attaching as needed.

Step (B)

In the step (B), the susceptor 2 is attached to the succeeding sheet (b) 23 (Fig. 15).

As shown in FIG. 14, the succeeding sheet (b) 23 has a substrate 22 on one side and a separator 24 on the other side.

The adhesive composition constituting the adhesive sheet (b) 23 is not particularly limited, and is preferably exemplified in the second layer 71.

Regarding the adhesion force of the bonding sheet (b) 23, for example, the temperature of 23 ± 2 ° C, the peeling speed of 300 mm / min, the 90 ° peeling peeling force for the silicon wafer is preferably less than 0.30 N / 20 mm, more preferably It is 0.20N/20mm or less. If it is less than 0.30 N/20 mm, the susceptor 2 can be easily separated from the semiconductor wafer 4. On the other hand, the lower limit of the 90° peeling peeling force is preferably 0.001 N/20 mm or more, more preferably 0.005 N/20 mm or more, still more preferably 0.010 N/20 mm or more. When it is 0.001 N/20 mm or more, the semiconductor wafer 4 can be favorably fixed to the susceptor 2, and back surface polishing or the like can be favorably performed.

The base material 22 is not particularly limited, and examples thereof include those exemplified in the base material 12 . The separator 24 is not particularly limited, and examples thereof include those in the separator 14 .

The susceptor 2 is not particularly limited, and the susceptor 1 described in the first aspect of the invention can be preferably used.

In the step B, the spacer 24 is peeled off and the susceptor 2 is attached to the adhesive sheet (b) 23.

The attachment method is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

Further, in the case where the area of the succeeding sheet (b) 23 is larger than the area of the susceptor 2, it is only necessary to cut the succeeding sheet (b) 23 before or after attaching as needed.

Step (C)

In the step (C), the succeeding sheet (a) 13 of the semiconductor wafer 4 with the adhesive sheet (a) 13 obtained by the step (A), and the adhesive sheet (b) obtained by the step (B) The adhesive piece (b) 23 of the susceptor 2 of 23 is attached (Fig. 16). Thereby, the semiconductor wafer 4 can be fixed to the susceptor 2.

The bonding method is not particularly limited. After the bonding, the succeeding sheet (a) 13 and the succeeding sheet (b) 23 are subjected to oxime imidization as needed. Thereby, the susceptor 2 can be well fixed to the semiconductor wafer 4. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the succeeding sheet (a) 13 and the succeeding sheet (b) 23 may be imidized.

Further, after bonding, the adhesive sheet (a) 13 and the succeeding sheet (b) 23 may be thermally cured as needed. When a polyoxyxylene resin is used as the adhesive sheet (a) 13 and the adhesive sheet (b) 23, the susceptor 2 can be favorably fixed to the semiconductor wafer 4 by thermal curing. Further, only one of the succeeding sheet (a) 13 and the succeeding sheet (b) 23 may be thermally cured.

Other steps

The semiconductor wafer 4 fixed on the susceptor 2 can be back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After back grinding, the non-circuit forming surface of the semiconductor wafer 4 can be surface-polished Processing). Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After the semiconductor wafer 4 is subjected to a process required for back grinding or processing, the susceptor 2 is separated from the semiconductor wafer 4.

The method of separating the susceptor 2 from the semiconductor wafer 4 is not particularly limited, and a method exemplified in the description of the method of separating the susceptor 1 from the semiconductor wafer 3 is exemplified.

In the above description, the case where the adhesion force of the succeeding sheet (b) 23 is lower than the above-described succeeding sheet (a) 13 has been described. However, the present invention is not limited thereto, and the adhesion of the sheet (b) 23 may be higher than that of the sheet (a) 13.

In this case, the 90° peeling peeling force for the tantalum wafer under the condition of the adhesion force of the succeeding sheet (b) 23, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min is preferably 0.30 N/20 mm. More preferably, it is 0.40 N/20 mm or more. The upper limit of the 90° peeling peeling force is, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

Further, regarding the adhesion force of the bonding sheet (a) 13, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the silicon wafer is preferably less than 0.30 N/20 mm. More preferably, it is 0.20 N/20 mm or less. The lower limit of the 90° peeling peeling force is preferably 0.001 N/20 mm or more, more preferably 0.005 N/20 mm or more, and still more preferably 0.010 N/20 mm or more.

Moreover, in the above description, the case where the back sheet (a) 13 has the base material 12 and the spacer 14 has been described. However, the sheet (a) 13 may have the separator 14 or may have the substrate 12 . Similarly, the sheet (b) 23 is the same, and the sheet (b) 23 may not have the separator 24 or may have the substrate 22.

<<3rd invention>>

Hereinafter, the third aspect of the invention will be described with respect to the first invention.

A third object of the present invention is to provide a method of fabricating a semiconductor device which can securely mount a semiconductor wafer on a susceptor and can easily separate the susceptor from the semiconductor wafer from.

A method of manufacturing a semiconductor device according to a third aspect of the present invention, comprising: a step (A) of attaching a semiconductor wafer to one surface of a temporary fixing sheet; and attaching a base having a sloped surface to the other surface of the temporary fixing sheet Step (B) of forming a seat, and forming an adhesive layer having a higher adhesive force than the temporary fixing sheet between the temporary fixing sheet and the inclined surface portion of the base, and fixing the temporary fixing sheet to the above Step (C) on the pedestal.

The order of steps (A) to (C) is not particularly limited. For example, the order of step (A), step (B) and step (C); the order of step (B), step (A) and step (C); step (A), step (C) and step ( The order of B); the order of step (B), step (C) and step (A), and the like.

Among them, the order of the step (A), the step (B), and the step (C) is preferred because the adhesive layer is easily formed, and the possibility of overflow of the adhesive layer or the possibility of forming a necessary amount of the adhesive layer or more is possible. Less sexual.

Hereinafter, a method of manufacturing a semiconductor device according to a third aspect of the present invention will be described with reference to the drawings.

Figure 17 is a cross-sectional view showing a sheet for temporary fixing. Fig. 18 is a view showing a state in which a semiconductor wafer is attached to a sheet for temporary fixing. Fig. 19 is a view showing a state in which an adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor.

Step (A)

In the step (A), the semiconductor wafer 3 is attached to one surface of the temporary fixing sheet 81 (Fig. 18).

The method of attaching the semiconductor wafer 3 to the temporary fixing sheet 81 is not particularly limited, and it is preferable to attach the circuit forming surface of the semiconductor wafer 3 to the temporary fixing sheet 81.

The attachment method is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

After the attachment, the temporary fixing sheet 81 is imidized as needed. By this, The temporary fixing sheet 81 and the semiconductor wafer 3 are satisfactorily joined. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours.

After the attachment, the temporary fixing sheet 81 may be thermally cured as needed. Thereby, the temporary fixing sheet 81 and the semiconductor wafer 3 can be satisfactorily joined. The heat hardening can be carried out by a conventionally known method, for example, it can be thermally cured at 100 to 350 ° C (preferably 150 to 350 ° C) for 0.1 to 5 hours under a nitrogen atmosphere.

The thickness of the temporary fixing sheet 81 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. When the thickness is 10 μm or more, the unevenness on the surface of the semiconductor wafer can be followed, and the temporary fixing sheet 81 can be filled without any gap. Moreover, the thickness of the temporary fixing sheet 81 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage enthalpy during heating can be suppressed or prevented.

The shape when the temporary fixing sheet 81 is viewed in plan is not particularly limited, and is generally circular.

The adhesion force of the temporary fixing sheet 81 is lower than the adhesion force of the adhesive layer 80 described below. Regarding the adhesion force of the temporary fixing sheet 81, for example, a temperature of 23±2° C. and a peeling speed of 300 mm/min, the 90° peeling peeling force for the silicon wafer is preferably less than 0.30 N/20 mm, more preferably It is 0.20N/20mm or less. If it is less than 0.30 N/20 mm, the paste of the semiconductor wafer 3 can be prevented from remaining. On the other hand, the lower limit of the 90° peeling peeling force is preferably 0.01 N/20 mm or more, more preferably 0.02 N/20 mm or more, and still more preferably 0.05 N/20 mm or more. When 0.01 N/20 mm or more, the semiconductor wafer 3 can be satisfactorily fixed to the susceptor 1, and back surface polishing or the like can be satisfactorily performed.

The adhesive composition constituting the temporary fixing sheet 81 is not particularly limited as long as the adhesive force of the temporary fixing sheet 81 is selected to be lower than the adhesive force of the adhesive layer 80 described below. As the adhesive composition constituting the temporary fixing sheet 81, the polyimine resin or the polyoxynoxy resin described in the first aspect of the invention can be preferably used. Among them, in terms of heat resistance, drug resistance, and paste residue, a polyimide resin is preferred.

As the semiconductor wafer 3, the semiconductor wafer 3 described in the first aspect of the invention can be preferably used. Also, the semiconductor wafer 3 usually has a sloped surface.

Step (B)

In the step (B), the susceptor 1 having the inclined surface portion is attached to the other surface of the temporary fixing sheet 81.

The attachment method is not particularly limited, and it is preferably attached by roll lamination or vacuum pressurization. The attachment conditions are not particularly limited, and for example, they can be attached at 23 to 250 ° C and 0.01 to 10 MPa.

An inclined surface that is inclined from the upper surface of the susceptor 1 and the lower surface toward the side surface (outer side) is formed on the peripheral portion of the susceptor 1. The peripheral portion where such an inclined surface is formed is a slope portion.

The susceptor 1 is not particularly limited as long as it has a sloped surface. As the susceptor 1, the susceptor 1 described in the first aspect of the invention can be preferably used. Among them, for reasons of smoothness, availability, and contamination, a germanium wafer or a glass wafer is preferred.

Step (C)

In the step (C), the temporary fixing sheet 81 is fixed to the susceptor 1 by forming an adhesive layer 80 having a higher adhesive force than the temporary fixing sheet 81 between the temporary fixing sheet 81 and the inclined surface portion of the susceptor 1. On (Figure 19).

Specifically, a liquid adhesive composition is applied between the temporary fixing sheet 81 and the inclined surface portion of the susceptor 1 and dried, thereby forming the adhesive layer 80 and fixing the temporary fixing sheet 81 to the temporary fixing sheet 81. On the base 1.

With respect to the adhesion force of the adhesive layer 80, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the silicon wafer is preferably 0.30 N/20 mm or more, more preferably 0.40 N. /20mm or more. When it is 0.30 N/20 mm or more, the temporary fixing sheet 81 can be satisfactorily fixed to the susceptor 1, and back surface polishing or the like can be satisfactorily performed. Further, the upper limit of the 90° peeling peeling force is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

The material constituting the adhesive layer 80 is not particularly limited as long as the adhesive force of the adhesive layer 80 is higher than the adhesive force of the temporary fixing sheet 81. As the material constituting the adhesive layer 80, the above polyimine resin and the above polyoxyxylene resin can be preferably used. Among them, the above-mentioned polyimine resin is preferred in terms of heat resistance, drug resistance, and paste residue.

(a) of FIG. 20 is a view showing a state in which the adhesive layer 80 is formed between the temporary fixing sheet 81 and the inclined surface portion of the susceptor 1. Fig. 20(b) is an enlarged view of the periphery of the inclined surface.

As shown in Fig. 20 (b), the end portion of the temporary fixing sheet 81 is preferably located further inside than the end portion of the susceptor 1 and closer to the outer side than the inclined starting position of the inclined surface portion of the susceptor 1. Specifically, when the distance between the end portion of the susceptor 1 and the end portion of the temporary fixing sheet 81 in the lateral direction (the horizontal direction of the surface of the susceptor 1) is D1, the end portion of the susceptor 1 and the base are used. The distance between the inclination starting position of the inclined portion of the seat 1 in the lateral direction is D2, and D1 is preferably greater than one tenth of D2, that is, (D2)/10. If D1 is larger than one tenth of D2, the temporary fixing sheet 81 can be prevented from coming into contact with other members (for example, a cassette for transporting) and rolled up.

On the other hand, D1 is preferably less than two-thirds of D2, that is, (D2) × (2/3). If D1 is less than two-thirds of D2, the area of the succeeding portion produced by the adhesive layer 80 can be ensured to some extent, and then the reliability is excellent.

Furthermore, D2 is usually 0.1 to 0.4 mm.

Fig. 21 (a) is a view showing a state in which an adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor. (b) of FIG. 21 is an enlarged view of the periphery of the slope portion of the semiconductor wafer.

As shown in FIG. 21(b), the end portion of the temporary fixing sheet 81 is preferably located further inside than the end portion of the semiconductor wafer 3 and closer to the outside than the inclined starting position of the inclined surface portion of the semiconductor wafer 3.

Specifically, when the distance between the end portion of the semiconductor wafer 3 and the end portion of the temporary fixing sheet 81 in the lateral direction (the horizontal direction of the surface of the semiconductor wafer 3) is D3, the semiconductor is used. The distance between the end portion of the wafer 3 and the inclined starting position of the slope portion of the semiconductor wafer 3 in the lateral direction is D4, and D3 is preferably greater than one tenth of D4, that is, (D4)/10. If D3 is larger than one tenth of D4, the temporary fixing sheet 81 can be prevented from coming into contact with other members (for example, a cassette for transporting) and rolled up.

On the other hand, D3 is preferably less than two-thirds of D4, that is, (D4) × (2/3). If D3 is less than two-thirds of D4, the area of the succeeding portion produced by the adhesive layer 80 can be ensured to some extent, and then the reliability is excellent.

Furthermore, D4 is usually 0.1 to 0.4 mm.

Other steps

Preferably, the semiconductor wafer 3 fixed to the susceptor 1 by the steps (A) to (C) is back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 3 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After the semiconductor wafer 3 is subjected to a process required for back grinding or processing, it is preferable to separate the susceptor 1 from the temporary fixing sheet 81.

The method of separating the susceptor 1 from the temporary fixing sheet 81 is not particularly limited.

For example, a method of cutting a slit in the temporary fixing sheet 80 and separating it, and a method of reducing the adhesion of the adhesive layer 80 and separating it are preferable. Among them, a method of cutting a slit in the temporary fixing sheet 81 and separating it is preferable because no load is applied to the semiconductor wafer 3.

Fig. 22 is a view showing a state in which a slit is cut in the temporary fixing sheet 81. As shown in Fig. 22, it is preferable that the slit 99 is cut out from the temporary fixing sheet 81 until reaching the susceptor 1, and it is more preferable to cut the slit 99 on the temporary fixing sheet 81 until reaching the slope of the susceptor 1. Until now. The slitting method is not particularly limited, and the slit can be cut by a previously known method such as a cutter or a laser.

The method of reducing the adhesion force of the agent layer 80 is not particularly limited, and a method of dissolving the adhesive layer 80 by a solvent is exemplified; and the adhesive layer 80 is formed by using a material whose adhesion force is lowered with heating in advance, and is lowered by heating. The method of force, etc.

In the above description, the case where the circuit formation surface and the non-circuit formation surface are used as the semiconductor wafer 3 has been described. However, it is not limited to those having a circuit forming surface and a non-circuit forming surface, and may be a non-circuit forming surface on both sides.

Further, the case where the semiconductor wafer 3 fixed on the susceptor 1 by the steps (A) to (C) is processed after the back surface polishing is described. However, the semiconductor wafer 3 may be processed without back grinding.

Moreover, the shape of the sheet for temporary fixation has been described with respect to the case where the cross section is rectangular. However, the shape of the sheet for temporary fixing is not particularly limited. For example, as shown in FIG. 23, a recess may be provided in the peripheral portion of the temporary fixing sheet.

As described above, in the manufacturing method of the third aspect of the invention, the order of the steps (A) to (C) is not particularly limited. For example, step (C) can be carried out before step (B). In this case, the peripheral portion of the temporary fixing sheet (the portion corresponding to the inclined surface portion) is provided with an adhesive layer as a sheet in advance, and the adhesive layer is applied to the temporary fixing sheet in the manner of the inclined surface portion. Attach the pedestal to the top.

<<The fourth invention>>

Hereinafter, the fourth invention (the 4-1st invention, the 4th invention, the 4th invention, the 4th invention, and the 4th invention), and the first invention Explain the different aspects.

A fourth object of the present invention is to provide a method of manufacturing a semiconductor device which can securely mount a semiconductor wafer on a susceptor and can easily separate the susceptor from the semiconductor wafer.

[4-1th invention]

A method of manufacturing a semiconductor device according to a fourth aspect of the present invention, comprising: a step of preparing a bonding sheet having a first adhesive layer and a second layer having a lower adhesion force than the first adhesive layer, and then surrounding the sheet The portion is formed by the first adhesive layer, and the central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer; and the step of fixing the semiconductor wafer to the susceptor using the adhesive sheet And a step of separating the pedestal from the semiconductor wafer by cutting a slit in the first adhesive layer until reaching the second layer.

First, a bonding sheet having a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer, and a peripheral portion of the sheet formed of the first adhesive layer, which is higher than the peripheral portion, is prepared The central portion of the inner side is formed of a laminate of the first adhesive layer and the second layer.

Figure 24 is a cross-sectional schematic view of a back sheet 5 which can be used in the 4-1th invention. As shown in FIG. 24, the succeeding sheet 5 peripheral portion 54 is formed of the first adhesive layer 50, and the central portion 53 which is further inside than the peripheral portion 54 is formed of a laminate of the first adhesive layer 50 and the second layer 51. That is, the succeeding sheet 5 has the second layer 51 and the first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51. The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50.

Next, the peripheral portion 54 of the sheet 5 is formed of the above-described first adhesive layer 50. Then, the first adhesive layer 50 having a higher force than the second layer 51 is present in the peripheral portion 54, so that the semiconductor wafer can be firmly fixed to the susceptor at this portion.

The central portion 53 that is further inside than the peripheral portion 54 is formed by laminating the first adhesive layer 50 and the second layer 51. The semiconductor wafer or the susceptor can be firmly fixed by the surface on which only the first adhesive layer 50 is exposed. Further, when the second layer 51 is in contact with the susceptor, the adhesive sheet is easily peeled off from the susceptor, and the paste remains small, and the susceptor can be easily recovered.

Figure 25 is a plan view of a backsheet 5 which can be used in the 4-1st invention.

As shown in Fig. 25, the shape of the succeeding sheet 5 in a plan view is circular. As the adhesive sheet 5, the adhesive sheet 5 described in the first aspect of the invention can be preferably used.

As shown in Fig. 26, the succeeding sheet 5 may be formed with other layers. Figure 26 is a cross-sectional schematic view of a back sheet 5 which can be used in the 4-1st invention. The third sheet 55 is formed on the succeeding sheet 5 of FIG. 26 over the peripheral portion 54 and the central portion 53. By attaching the exposed surface of the third layer 55 having a lower adhesion than the first adhesive layer 50 to the semiconductor wafer, the adhesive sheet 5 with the third layer 55 can be easily peeled off from the semiconductor wafer. Moreover, the paste residue of the semiconductor wafer can be eliminated, and the semiconductor wafer cleaning step can be omitted.

In the following description, the case where the back sheet 5 shown in Figs. 24 and 25 is used will be described.

After the bonding sheet 5 is prepared, the semiconductor wafer 41 is fixed to the susceptor 31 by using the bonding sheet 5. FIG. 27 is a schematic view showing a state in which the semiconductor wafer 41 is fixed to the susceptor 31.

The method of fixing the semiconductor wafer 41 to the susceptor 31 by using the adhesive sheet 5 is not particularly limited, and it is preferable that the first adhesive layer 50 of the adhesive sheet 5 and the surface on which the second layer 51 is exposed are attached to the susceptor 31. A method of attaching only the surface on which the first adhesive layer 50 of the sheet 5 is exposed is attached to the circuit formation surface of the semiconductor wafer 41 (FIG. 27).

As the semiconductor wafer 41, the semiconductor wafer 3 described in the first aspect of the invention can be preferably used. As the susceptor 31, the susceptor 1 described in the first aspect of the invention can be preferably used.

The attaching (fixing) method is not particularly limited, and is preferably crimping. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are, for example, preferably 20 to 300 ° C, 0.001 to 10 MPa, and 0.001 to 10 mm/sec. The crimping time is usually 0.1 to 10 minutes.

After the pressure bonding, the first adhesive layer 50 and the second layer 51 are imidized as needed. Thereby, the semiconductor wafer 41 can be well fixed to the susceptor 31. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the first adhesive layer 50 and the second layer 51 may be subjected to 醯 Imine.

Then, it is preferable to perform back surface polishing on the semiconductor wafer 41. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 41 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After performing the necessary processing such as back grinding or processing, the first adhesive layer 50 is diced to separate the susceptor 31 from the semiconductor wafer 41. Fig. 28 is a schematic view showing a state in which the first adhesive layer 50 is cut.

The cutting method is not particularly limited, and the cutting can be performed by a conventionally known method such as a cutter or a laser.

In the separating step, the first adhesive layer 50 is cut. Thereby, the continuity of the first adhesive layer 50 can be broken, and an external force can be applied as needed, whereby the susceptor 31 can be easily separated from the semiconductor wafer 41. Further, since the first sheet layer 50 is formed on the peripheral portion 54 of the succeeding sheet 5, the slit 101 is easily cut out from the first adhesive layer 50.

In the above description, the case where the shape of the back sheet 5 having a circular shape in plan view is used has been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or an elliptical shape.

Further, the case where the shape of the second layer 51 in the plan view is a circular back sheet 5 has been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or an elliptical shape.

In the above description, as a method of fixing the semiconductor wafer 41 to the susceptor 31 by using the adhesive sheet 5, the surface on which the first adhesive layer 50 and the second layer 51 of the adhesive sheet 5 are exposed is attached to the susceptor 31. And attaching only the exposed surface of the first adhesive layer 50 of the sheet 5 to the semiconductor wafer The method of forming a circuit on the surface of 41 is explained. However, the method of fixing the semiconductor wafer 41 to the susceptor 31 by using the bonding sheet 5 is not particularly limited, and the surface on which only the first adhesive layer 50 of the bonding sheet 5 is exposed may be attached to the susceptor 31. A method of attaching the exposed surface of the first adhesive layer 50 and the second layer 51 of the bonding sheet 5 to the circuit formation surface of the semiconductor wafer 41.

Further, a case where a circuit having a circuit formation surface and a non-circuit formation surface is used as the semiconductor wafer 41 has been described. However, it is not limited to those having a circuit forming surface and a non-circuit forming surface, and may be a non-circuit forming surface on both sides.

[4-2nd invention]

A method of manufacturing a semiconductor device according to a fourth aspect of the present invention, comprising: a step of preparing a bonding sheet having a first adhesive layer and a second layer having a lower adhesion force than the first adhesive layer, and then surrounding the sheet a portion formed of the first adhesive layer, a central portion further inside the peripheral portion formed of the second layer, a step of fixing the semiconductor wafer on the susceptor using the adhesive sheet, and the first adhesive layer The step of cutting the slit from the semiconductor wafer until the second layer is reached.

First, a bonding sheet having a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer, and a peripheral portion of the sheet formed of the first adhesive layer, which is higher than the peripheral portion, is prepared The central portion of the inner side is formed by the second layer.

Figure 29 is a cross-sectional schematic view of a back sheet 6 which can be used in the 4th-2th invention. As shown in FIG. 29, the succeeding sheet 6 is formed by the first adhesive layer 60, and the central portion 63 which is further inside than the peripheral portion 64 is formed by the second layer 61. The adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60.

The peripheral portion 64 of the succeeding sheet 6 is formed by the first adhesive layer 60. Since the first adhesive layer 60 having a higher adhesion force than the second layer 61 exists in the peripheral portion 64, the semiconductor wafer can be firmly fixed to the susceptor at this portion.

The central portion 63 that is further inside than the peripheral portion 64 is formed by the second layer 61. Due to the second layer 61 and Since the susceptor is in contact with each other, it is easy to peel off the adhesive sheet 6 from the susceptor, and the paste remains small, and it is easy to collect the susceptor.

Figure 30 is a plan view of a back sheet 6 which can be used in the 4th-2th invention. As shown in Fig. 30, the shape of the succeeding sheet 6 in a plan view is circular. As the adhesive sheet 6, the adhesive sheet 6 described in the first aspect of the invention can be preferably used.

As shown in FIG. 31, the succeeding film may also be formed with other layers. Figure 31 is a cross-sectional schematic view of a back sheet 6 which can be used in the 4th-2th invention. The succeeding sheet 6 of FIG. 31 is formed with a third layer 65 over the peripheral portion 64 and the central portion 63. By attaching the exposed surface of the third layer 65 having a lower adhesive force than the first adhesive layer 60 to the semiconductor wafer, the adhesive sheet 6 with the third layer 65 can be easily peeled off from the semiconductor wafer. Moreover, the paste residue of the semiconductor wafer can be eliminated, and the semiconductor wafer cleaning step can be omitted.

In the following description, the case where the back sheet 6 shown in Figs. 29 and 30 is used will be described.

After the bonding sheet 6 is prepared, the semiconductor wafer 42 is fixed to the susceptor 32 using the bonding sheet 6.

The fixing method is not particularly limited, and is preferably crimping. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are, for example, preferably 20 to 300 ° C, 0.001 to 10 MPa, and 0.001 to 10 mm/sec. The crimping time is usually 0.1 to 10 minutes.

After the pressure bonding, the first adhesive layer 60 and the second layer 61 are imidized as needed. Thereby, the semiconductor wafer 42 can be well fixed to the susceptor 32. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the first adhesive layer 60 and the second layer 61 may be imidized.

The semiconductor wafer 42 is the same as the semiconductor wafer 41. The base 32 is the same as the base 31.

Then, it is preferable to perform back surface polishing on the semiconductor wafer 42. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 42 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After performing the necessary processing such as back grinding or processing, the first adhesive layer 60 is diced to separate the susceptor 32 from the semiconductor wafer 42. Fig. 32 is a schematic view showing a state in which the first adhesive layer is cut.

The cutting method is not particularly limited, and the cutting can be performed by a conventionally known method such as a cutter or a laser.

In the separating step, the first adhesive layer 60 is cut. Thereby, the continuity of the first adhesive layer 60 can be broken, and an external force can be applied as needed, whereby the susceptor 32 can be easily separated from the semiconductor wafer 42. Further, since the succeeding sheet 6 has the first adhesive layer 60 formed on the peripheral portion 64, the slit 102 is easily cut out from the first adhesive layer 60.

In the above description, the back sheet 6 having a circular shape in plan view has been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or an elliptical shape.

Moreover, the back sheet 6 in which the shape of the second layer 61 is circular in plan view is described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or an elliptical shape.

[The 4th-3th invention]

A method of manufacturing a semiconductor device according to a fourth aspect of the present invention, comprising: a step of preparing a bonding sheet, wherein the bonding layer has a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer; a step of fixing the semiconductor wafer to the susceptor on the substrate, and a step of separating the first adhesive layer from the second layer by cutting a slit at a boundary between the first adhesive layer and the second layer.

First, a bonding sheet having a first adhesive layer and a second layer having a lower adhesive force than the first adhesive layer is prepared.

Figure 33 is a cross-sectional schematic view of a back sheet 7 which can be used in the fourth to third invention. As shown in FIG. 33, the succeeding sheet 7 is formed by laminating the first adhesive layer 70 and the second layer 71. The adhesion of the second layer 71 is lower than the adhesion of the first adhesive layer 70.

As the adhesive sheet 7, the adhesive sheet 7 described in the second aspect of the invention can be preferably used.

As shown in FIG. 34, the succeeding film may also be formed with other layers. Figure 34 is a schematic cross-sectional view of a sheet which can be used in the 4th to 3rd invention. The adhesive sheet 7 of Fig. 34 is formed by laminating the third layer 75, the second layer 71, and the first adhesive layer 70.

The adhesion of the third layer 75 is preferably lower than the adhesion of the first adhesive layer 70. Thereby, when the third layer 75 of the adhesive sheet 7 is attached to the susceptor, the adhesive sheet 7 can be easily peeled off from the susceptor. Further, the paste residue of the susceptor can be eliminated, and the cleaning step of the susceptor can be omitted.

In the following description, the case where the back sheet 7 shown in Fig. 33 is used will be described.

FIG. 35 is a schematic view showing a state in which the semiconductor wafer 43 is attached to the adhesive sheet 7. FIG. 36 is a schematic view showing a state in which the semiconductor wafer 43 is fixed to the susceptor 33.

The semiconductor wafer 43 is fixed to the susceptor 33 using the bonding sheet 7. For example, the semiconductor wafer 43 is fixed to the susceptor 33 by attaching the semiconductor wafer 43 to the first adhesive layer 70 and attaching the susceptor 33 to the second layer 71. In the case of this method, the first adhesive layer 70 can follow the irregularities on the surface of the semiconductor wafer 43, and the semiconductor wafer 43 can be favorably fixed to the susceptor 33. On the other hand, since the second layer 71 having a lower adhesive force than the first adhesive layer 70 is in contact with the susceptor 33, the adhesive sheet 7 is easily peeled off from the susceptor 33. Further, the paste of the susceptor 33 remains small, and the susceptor 33 can be easily recovered.

First, the circuit formation surface of the semiconductor wafer 43 is bonded to the first adhesive layer 70 (FIG. 35).

The bonding method (attachment method) is not particularly limited, and examples thereof include 23 to 250 ° C. The method of attaching at 0.01~10MPa.

Further, in the case where the area of the bonding sheet 7 is larger than the area of the semiconductor wafer 43, the bonding sheet 7 may be cut before or after bonding as needed.

Furthermore, the semiconductor wafer 43 is the same as the semiconductor wafer 41.

Then, the susceptor 33 is attached to the second layer 71 (FIG. 36).

The bonding method (attachment method) is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

Further, in the case where the area of the succeeding sheet 7 is larger than the area of the susceptor 33, the contiguous sheet 7 may be cut as needed.

Further, the susceptor 33 is the same as the susceptor 31.

After bonding, the first adhesive layer 70 and the second layer 71 are imidized as needed. Thereby, the semiconductor wafer 43 can be well fixed to the susceptor 33. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the first adhesive layer 70 and the second layer 71 may be imidized.

Further, after bonding, the first adhesive layer 70 and the second layer 71 may be thermally cured as needed. When polyoxyxylene resin is used as the first adhesive layer 70 and the second layer 71, the semiconductor wafer 43 can be favorably fixed to the susceptor 33 by thermal curing. Further, only one of the first adhesive layer 70 and the second layer 71 may be thermally cured.

Then, it is preferable to perform back grinding of the semiconductor wafer 43 fixed on the susceptor 33. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 43 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After the semiconductor wafer 43 is subjected to a process such as back grinding or processing, a slit is cut out at the boundary between the first adhesive layer 70 and the second layer 71 to separate the first adhesive layer 70 from the second layer 71. FIG. 37 is a schematic view showing a state in which the slit 103 is cut out at the boundary between the first adhesive layer 70 and the second layer 71.

The slitting method is not particularly limited, and the slit can be cut by a previously known method such as a cutter or a laser. The depth of the slit is not particularly limited and is usually 0.1 to 10 mm.

Since the adhesion force of the second layer 71 is lower than that of the first adhesive layer 70, the first adhesive layer 70 and the second layer 71 can be easily separated by the application of the external force and the slit 103 as a starting point.

In the above description, a method of attaching the semiconductor wafer 43 to the first adhesive layer 70 and attaching the susceptor 33 to the second layer 71 has been described. However, the present invention is not limited thereto, and the susceptor 33 may be attached to the first adhesive layer 70 and the semiconductor wafer 43 may be attached to the second layer 71.

[4-4th invention]

4-4. A method of manufacturing a semiconductor device according to the present invention, comprising: a step (A) of attaching a semiconductor wafer to a bonding sheet (a); and a step (B) of attaching a pedestal to the bonding sheet (b); The above-mentioned succeeding sheet (a) of the semiconductor wafer with the bonding sheet (a) obtained in the above step (A), and the above-mentioned substrate of the susceptor with the bonding sheet (b) obtained by the above step (B) The sheet (b) is bonded to obtain a step (C) of laminating the pedestal, the succeeding sheet (b), the succeeding sheet (a), and the semiconductor wafer, and the above-mentioned laminated body Next, a step (D) of cutting the slit at the boundary between the sheet (a) and the sheet (b) and separating the sheet (a) from the sheet (b). Further, one of the above-mentioned succeeding sheets (a) and (b) has a lower adhesion force than the other.

The semiconductor wafer can be favorably fixed to the susceptor by using not only the adhesive sheet having a lower adhesive force but also a bonding sheet having a relatively high adhesion force.

The bonding force of the sheet (b) is then preferably lower than that of the above sheet (a). In this case, the bonding force of the bonding sheet (a) is higher than that of the bonding sheet (b) and the surface of the semiconductor wafer or the like is excellent in bumping property. different. Therefore, the succeeding sheet (a) can follow the irregularities on the surface of the semiconductor wafer, so that the semiconductor wafer can be favorably fixed to the susceptor. On the other hand, since the adhesive force is lower than the contact sheet (b) of the adhesive sheet (a) and the susceptor, the adhesive sheet (b) is easily peeled off from the susceptor. Further, the paste of the susceptor is less left, and the susceptor can be easily recovered.

In the following description, the case where the adhesive force of the succeeding sheet (b) is lower than the above-described succeeding sheet (a) will be described.

Figure 38 is a schematic cross-sectional view of a sheet (a) which can be used in the 4th-4th invention. Fig. 39 is a schematic view showing a state in which a semiconductor wafer is attached to a bonding sheet (a). Figure 40 is a cross-sectional schematic view of a back sheet (b) which can be used in the 4th-4th invention. Fig. 41 is a schematic view showing a state in which a susceptor is attached to the succeeding sheet (b). Fig. 42 is a schematic view showing a state in which the semiconductor wafer is fixed to the susceptor by using the bonding sheets (a) and (b).

Step (A)

In the step (A), the semiconductor wafer 44 is attached to the succeeding sheet (a) 13 (Fig. 39).

First, the succeeding sheet (a) 13 will be described. As shown in Fig. 38, the succeeding sheet (a) 13 has a substrate 12 on one side and a separator 14 on the other side. As the adhesive sheet (a) 13, the adhesive sheet (a) 13 described in the second invention can be preferably used.

The semiconductor wafer 44 is the same as the semiconductor wafer 41.

In the step A, the spacer 14 is peeled off and the semiconductor wafer 44 is attached to the succeeding sheet (a) 13.

The attachment method is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

Further, in the case where the area of the bonding sheet (a) 13 is larger than the area of the semiconductor wafer 44, the bonding sheet (a) 13 may be cut before or after attaching as needed.

Step (B)

In the step (B), the susceptor 34 (Fig. 41) is attached to the succeeding sheet (b) 23.

As shown in FIG. 40, the succeeding sheet (b) 23 has a substrate 22 on one side and a separator 24 on the other side. As the succeeding sheet (b) 23, the second embodiment of the present invention can be preferably used. Sheet (b) 23.

The base 34 is identical to the base 31.

In the step B, the spacer 24 is peeled off and the susceptor 34 is attached to the adhesive sheet (b) 23.

The attachment method is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

Further, in the case where the area of the succeeding sheet (b) 23 is larger than the area of the susceptor 34, it is only necessary to cut the succeeding sheet (b) 23 before or after attaching as needed.

Step (C)

In the step (C), the adhesive sheet (a) 13 of the semiconductor wafer 44 with the adhesive sheet (a) 13 obtained by the step (A), and the adhesive sheet (b) obtained by the step (B) The bottom piece (b) 23 of the pedestal 34 of 23 is attached. Thereby, a laminated body in which the susceptor 34, the succeeding sheet (b) 23, the succeeding sheet (a) 13, and the semiconductor wafer 44 are laminated in this order is obtained (FIG. 42).

The bonding method is not particularly limited. After the bonding, the succeeding sheet (a) 13 and the succeeding sheet (b) 23 are subjected to oxime imidization as needed. Thereby, the semiconductor wafer 44 can be well fixed to the susceptor 34. The ruthenium imidization can be carried out by a previously known method. For example, the ruthenium imidization can be carried out at 150 to 500 ° C for 0.5 to 5 hours. Further, only one of the succeeding sheet (a) 13 and the succeeding sheet (b) 23 may be imidized.

Further, after bonding, the adhesive sheet (a) 13 and the succeeding sheet (b) 23 may be thermally cured as needed. When a polyoxyxylene resin is used as the adhesive sheet (a) 13 and the adhesive sheet (b) 23, the semiconductor wafer 44 can be favorably fixed to the susceptor 34 by thermal curing. Further, only one of the succeeding sheet (a) 13 and the succeeding sheet (b) 23 may be thermally cured.

The semiconductor wafer 44 fixed to the susceptor 34 by the step (C) may be back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After back grinding, the non-circuit forming surface of the semiconductor wafer 44 can be formed (back-grinded) Processing). Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

Step (D)

After performing the necessary processing such as back grinding or processing on the semiconductor wafer 44, a slit is cut at the boundary between the sheet (a) 13 and the sheet (b) 23 to bond the sheet (a) 13 and the sheet (b). 23 separation. Fig. 43 is a schematic view showing a state in which the slit 104 is cut at the boundary between the sheet (a) 13 and the sheet (b) 23.

The slitting method is not particularly limited, and the slit can be cut by a previously known method such as a cutter or a laser. The depth of the slit is not particularly limited and is usually 0.1 to 10 mm.

Since the adhesion force of the succeeding sheet (b) 23 is lower than that of the succeeding sheet (a) 13, it is possible to easily separate the succeeding sheet (a) 13 and the succeeding sheet (b) 23 by using the slit 104 as a starting point by applying an external force.

In the above description, the case where the adhesion force of the succeeding sheet (b) 23 is lower than the above-described succeeding sheet (a) 13 has been described. However, the present invention is not limited thereto, and the adhesion of the sheet (b) 23 may be higher than that of the sheet (a) 13.

In this case, the value described in the second aspect of the invention can be used as the adhesion of the succeeding sheet (b) 23 and the adhesion of the succeeding sheet (a) 13.

Moreover, in the above description, the case where the back sheet (a) 13 has the base material 12 and the spacer 14 has been described. However, the sheet (a) 13 may have the separator 14 or may have the substrate 12 . Similarly, the sheet (b) 23 is the same, and the sheet (b) 23 may not have the separator 24 or may have the substrate 22.

[The 4th-5th invention]

A method of manufacturing a semiconductor device according to the fourth aspect of the present invention, comprising: a step (I) of attaching a semiconductor wafer to one side of a temporary fixing sheet; and attaching a base having a sloped surface to the other surface of the temporary fixing sheet Step (II) of forming a temporary fixing connection between the temporary fixing sheet and the inclined surface portion of the base, which is higher than the temporary fixing sheet; a step (III) of fixing the temporary fixing sheet to the susceptor, and after the steps (I) to (III), cutting the slit on the temporary fixing sheet to form the base The step (IV) of separating the sheet for temporary fixing is carried out.

The order of the steps (I) to (III) is not particularly limited. For example, the order of the step (I), the step (II) and the step (III); the order of the step (II), the step (I) and the step (III); the step (I), the step (III) and the step ( The order of II); the order of step (II), step (III) and step (I), and the like. Among them, the order of the step (I), the step (II), and the step (III) is preferred because the temporary fixing adhesive layer is easily formed, and the temporary fixing adhesive layer may overflow or be temporarily fixed. It is less likely that the necessary amount of the adhesive layer is above.

Figure 44 is a cross-sectional view showing a sheet for temporary fixing. Fig. 45 is a view showing a state in which a semiconductor wafer is attached to a sheet for temporary fixing. Fig. 46 is a view showing a state in which a temporary fixing adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor.

Step (I)

In the step (I), the semiconductor wafer 45 is attached to one surface of the temporary fixing sheet 81 (Fig. 45).

The method of attaching the semiconductor wafer 45 to the temporary fixing sheet 81 is not particularly limited, and it is preferable to attach the circuit forming surface of the semiconductor wafer 45 to the temporary fixing sheet 81.

The attachment method is not particularly limited, and examples thereof include a method of attaching at 23 to 250 ° C and 0.01 to 10 MPa.

After the attachment, the temporary fixing sheet 81 is imidized as needed. Thereby, the temporary fixing sheet 81 and the semiconductor wafer 45 can be satisfactorily joined. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours.

After the attachment, the temporary fixing sheet 81 may be thermally cured as needed. Thereby, the temporary fixing sheet 81 and the semiconductor wafer 45 can be satisfactorily joined. Thermal hardening can be carried out by a previously known method, for example, at 100 to 350 ° C (preferably 150 to 350 ° C), 0.1 Thermal hardening was carried out under conditions of ~5 hours under a nitrogen atmosphere.

As the temporary fixing sheet 81, the temporary fixing sheet 81 described in the third aspect of the invention can be preferably used.

The semiconductor wafer 45 is the same as the semiconductor wafer 41.

Step (II)

In the step (II), the base 35 having the inclined surface portion is attached to the other surface of the temporary fixing sheet 81.

The attachment method is not particularly limited, and it is preferably attached by roll lamination or vacuum pressurization. The attachment conditions are not particularly limited, and for example, they can be attached at 23 to 250 ° C and 0.01 to 10 MPa.

An inclined surface that is inclined from the upper surface of the base 35 and the lower surface toward the side surface (outer side) is formed at a peripheral portion of the base 35. The peripheral portion where such an inclined surface is formed is a slope portion.

The susceptor 35 is not particularly limited as long as it has a sloped surface, and the susceptor 1 described in the third aspect of the invention can be preferably used.

Step (III)

In the step (III), the temporary fixing adhesive layer 80 is formed between the temporary fixing sheet 81 and the inclined surface portion of the susceptor 35 with the adhesive force higher than the temporary fixing sheet 81, and the temporary fixing sheet 81 is fixed to the temporary fixing sheet 81. On the base 35 (Fig. 46).

Specifically, a liquid adhesive composition is applied between the temporary fixing sheet 81 and the inclined surface portion of the susceptor 35, and dried, etc., thereby forming the temporary fixing adhesive layer 80 and temporarily fixing the sheet. 81 is fixed to the base 35.

As the temporary fixing adhesive layer 80, the adhesive layer 80 described in the third aspect of the invention can be preferably used.

(a) of FIG. 47 is a view showing a state in which the temporary fixing adhesive layer 80 is formed between the temporary fixing sheet 81 and the inclined surface portion of the susceptor 35. Fig. 47 (b) is an enlarged view of the periphery of the inclined surface.

As shown in Fig. 47 (b), the end portion of the temporary fixing sheet 81 is preferably located further inside than the end portion of the base 35 and closer to the outer side than the inclined starting position of the inclined surface portion of the base 35. Specifically, when the distance between the end portion of the susceptor 35 and the end portion of the temporary fixing sheet 81 in the lateral direction (horizontal direction of the surface of the susceptor 35) is D1, the end portion of the susceptor 35 and the base are used. The distance from the slanting start position of the slanting face of the seat 35 to the lateral direction is set to D2, and D1 is preferably greater than one tenth of D2, that is, (D2)/10. If D1 is larger than one tenth of D2, the temporary fixing sheet 81 can be prevented from coming into contact with other members (for example, a cassette for transporting) and rolled up.

On the other hand, D1 is preferably less than two-thirds of D2, that is, (D2) × (2/3). If D1 is less than two-thirds of D2, the area of the succeeding portion produced by the adhesive layer 80 can be ensured to some extent, and then the reliability is excellent.

Furthermore, D2 is usually 0.1 to 0.4 mm.

Fig. 48 (a) is a view showing a state in which a temporary fixing adhesive layer is formed between the temporary fixing sheet and the inclined surface portion of the susceptor. (b) of FIG. 48 is an enlarged view of the periphery of the slope portion of the semiconductor wafer. As shown in Fig. 48 (b), the end portion of the temporary fixing sheet 81 is preferably located further inside than the end portion of the semiconductor wafer 45 and closer to the outer side than the inclined starting position of the slope portion of the semiconductor wafer 45.

Specifically, when the distance between the end portion of the semiconductor wafer 45 and the end portion of the temporary fixing sheet 81 in the lateral direction (the horizontal direction of the surface of the semiconductor wafer 45) is D3, the end of the semiconductor wafer 45 is used. The distance between the inclined portion and the inclined starting position of the semiconductor wafer 45 in the lateral direction is D4, and D3 is preferably greater than one tenth of D4, that is, (D4)/10. If D3 is larger than one tenth of D4, the temporary fixing sheet 81 can be prevented from coming into contact with other members (for example, a cassette for transporting) and rolled up.

On the other hand, D3 is preferably less than two-thirds of D4, that is, (D4) × (2/3). If D3 is less than two-thirds of D4, the area of the succeeding portion produced by the adhesive layer 80 can be ensured to some extent, and then the reliability is excellent.

Furthermore, D4 is usually 0.1 to 0.4 mm.

Other steps

Preferably, the semiconductor wafer 45 fixed to the susceptor 35 by the steps (I) to (III) is back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 45 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

Step (IV)

After the semiconductor wafer 45 is subjected to a process such as back grinding or processing, a slit is cut into the temporary fixing sheet 81 to separate the susceptor 35 from the temporary fixing sheet 81.

Fig. 49 is a view showing a state in which the slit 105 is cut out on the temporary fixing sheet 81. As shown in Fig. 49, it is preferable that the slit 105 is cut out from the temporary fixing sheet 81 until reaching the susceptor 35, and it is more preferable to cut the slit 105 on the temporary fixing sheet 81 until reaching the slope of the susceptor 35. Until now. The slitting method is not particularly limited, and the slit can be cut by a previously known method such as a cutter or a laser.

In the above description, the shape of the temporary fixing sheet has been described as a case where the cross section is rectangular. However, the shape of the sheet for temporary fixing is not particularly limited. For example, as shown in FIG. 50, a recess may be provided in the peripheral portion of the temporary fixing sheet.

As described above, the order of the steps (I) to (III) is not particularly limited. For example, step (III) can be carried out before step (II). In this case, the peripheral portion of the temporary fixing sheet (the portion corresponding to the inclined surface portion) is provided with a temporary fixing adhesive layer as a sheet to temporarily fix the adhesive layer to the inclined surface. The susceptor can be attached to the temporary fixing sheet.

<<The fifth invention>>

Hereinafter, the fifth invention will be described with respect to differences from the first invention.

According to a fifth aspect of the invention, there is provided an adhesive sheet for manufacturing a semiconductor device, which can securely fix a semiconductor wafer to a susceptor and can easily separate the susceptor from the semiconductor wafer. Moreover, it is an object of the invention to provide a method of manufacturing a semiconductor device using the semiconductor device.

[Next film]

The succeeding film for manufacturing a semiconductor device according to the fifth aspect of the present invention includes a first adhesive layer and a second layer having a structure having a large number of through holes and/or a nonwoven structure as a skeleton, and the second layer has a low adhesion force The adhesion force to the first adhesive layer.

Hereinafter, the back sheet of the fifth invention will be described with reference to the drawings.

[Embodiment 1]

Figure 51 is a cross-sectional view showing a sheet 5 of the first embodiment. As shown in FIG. 51, the succeeding sheet 5 is formed by the first adhesive layer 50, and the central portion 53 further inside the peripheral portion 54 is composed of the first adhesive layer 50 and a structure having a large number of through holes. The non-woven fabric structure is formed as a laminate of the second layer 51 of the skeleton. That is, the succeeding sheet 5 has the second layer 51 and the first adhesive layer 50 laminated on the second layer 51 in a state of covering the upper surface and the side surface of the second layer 51. The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50.

The semiconductor wafer or the susceptor can be firmly fixed by the surface including only the first adhesive layer 50. The semiconductor wafer or the susceptor can be favorably fixed by the surface having the first adhesive layer 50 and the second layer 51.

Then, the sheet 5 has the second layer 51 having a lower adhesion force. Therefore, the susceptor can be easily separated from the semiconductor wafer by an external force by, for example, cutting the first adhesive layer 50 or lowering the adhesion force. In the sheet 5, since the first adhesive layer 50 is formed on the peripheral portion 54, the first adhesive layer 50 can be easily cut or the adhesion of the first adhesive layer 50 can be lowered, and the separation can be easily performed.

The thickness of the sheet 5 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. If it is 10 μm or more, it can follow the unevenness of the surface of the semiconductor wafer, and it can be seamless. Fill the pad with a gap. Further, the thickness of the succeeding sheet 5 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage enthalpy during heating can be suppressed or prevented.

The thickness of the first adhesive layer 50 of the central portion 53 can be appropriately set, and is preferably 0.1 μm or more, more preferably 0.5 μm or more, and still more preferably 1 μm or more. Further, the thickness is preferably 300 μm or less, more preferably 200 μm or less.

Further, the thickness of the second layer 51 of the central portion 53 can be appropriately set.

Figure 52 is a plan view showing the back sheet 5 of the first embodiment. As shown in Fig. 52, the shape of the succeeding sheet 5 in a plan view is circular.

The diameter of the sheet 5 is not particularly limited. For example, the diameter of the sheet 5 is preferably +1.0 to -1.0 mm with respect to the diameter of the susceptor.

Further, when the succeeding sheet 5 is viewed in plan, the shape of the second layer 51 is circular. The area of the second layer 51 in the plan view of the sheet 5 is preferably 10% or more, more preferably 20% or more, and still more preferably 50% or more with respect to the area of the sheet 5 when the sheet 5 is viewed from above. When it is 10% or more, it is easy to cut the first adhesive layer 50 formed on the peripheral portion 54, or to lower the adhesion, and it is easy to separate the susceptor from the semiconductor wafer. Further, the area of the second layer 51 is preferably 99.95% or less, more preferably 99.9% or less. If it is 99.95% or less, the semiconductor wafer can be firmly fixed to the susceptor.

The 90° peeling peeling force for the tantalum wafer is preferably 0.30 N/20 mm or more, more preferably 0.40, for the adhesion force of the first adhesive layer 50, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min. N/20mm or more. When it is 0.30 N/20 mm or more, the semiconductor wafer can be favorably held on the susceptor, and back surface polishing or the like can be favorably performed. Further, the upper limit of the 90° peeling peeling force is not particularly limited, and the larger the better, for example, 30 N/20 mm or less, preferably 20 N/20 mm or less.

As the adhesive composition constituting the first adhesive layer 50, the polyimide resin or the polyoxynoxy resin described in the first aspect of the invention can be preferably used. Among them, heat resistance and drug resistance In terms of properties and paste residue, a polyimide resin is preferred.

The second layer 51 has a structure 57 and/or a non-woven structure having a large number of through holes 56 as a skeleton. 53 is a plan view of a structure 57 having a large number of through holes 56. As shown in FIG. 53, the through hole 56 penetrates in the thickness direction of the structure 57 (may also be referred to as the thickness direction of the back sheet 5).

The adhesion of the second layer 51 can be adjusted by adjusting the opening ratio of the structure 57 having a large number of through holes 56. Specifically, when the through hole 56 is filled by the adhesive composition described later, the adhesion can be increased by increasing the opening ratio, and the adhesion can be reduced by reducing the aperture ratio.

The opening ratio of the structure 57 is preferably 5% or more, more preferably 8% or more, still more preferably 10% or more. When it is 5% or more, the adhesive composition filled in the through-hole 56 can reach the to-be-attached body, and the adhesive force of the 2nd layer 51 can be adjusted.

Further, the opening ratio is preferably 98% or less, more preferably 95% or less, still more preferably 90% or less. When it is 98% or less, even if the same adhesive composition as the first adhesive layer 50 is filled in the through hole 56, the second layer 51 can be lowered as compared with the first adhesive layer 50. Then force.

In the structure 57, the shape of the through hole 56 (the shape of the through hole 56 when the sheet 5 is viewed in plan view) is not particularly limited, and examples thereof include a circular shape, an elliptical shape, and a polygonal shape. The shapes of the through holes 56 may all be the same or different.

When the sheet 5 is viewed in plan, the size (area) of one through hole 56 is preferably 70 μm ² or more, and more preferably 100 μm ² or more. Further, it is preferably 20 mm ² or less, more preferably 7 mm ² or less. Furthermore, the size of the through holes 56 may be the same or different.

The material of the structure 57 and the nonwoven fabric structure having a large number of through holes 56 is not particularly limited. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene Polyolefin such as polymethylpentene; ethylene-vinyl acetate Copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, poly Polyesters such as urethane, polyethylene terephthalate, polyethylene naphthalate; polycarbonate, polyimide, polyether ether ketone, polyimine resin, polyether phthalate Amine, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamine (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, Polyoxygen resin, paper, etc. Further, metal materials such as iron, copper, nickel, tungsten, aluminum, gold, silver, copper, brass, red brass, phosphor bronze, nickel-chromium alloy, nickel-copper alloy, bronze, and stainless steel (SUS) may be mentioned. These may be used alone or in combination of two or more. In the case of the structure 57 having a large number of through holes 56, in terms of heat resistance, a metal material, the above polyimine resin, and the above polyoxyxylene resin are preferable, and SUS or aluminum is more preferable. In the case of a non-woven structure, the polyimine resin, the polyoxymethylene resin, and the metal material are preferable in terms of heat resistance and contamination.

The lower the bonding force of the structure 57 and the non-woven structure having a large number of through holes 56, the better, for example, the temperature of 23 ± 2 ° C, the peeling speed of 300 mm / min, the 90 ° peeling peeling force for the silicon wafer is better. It is less than 0.30 N/20 mm, more preferably 0.20 N/20 mm or less, further preferably 0.10 N/20 mm or less. If it is less than 0.30 N/20 mm, the second layer 51 can be easily peeled off. The lower limit of the 90° peeling peeling force is, for example, 0 N/20 mm or more and 0.001 N/20 mm or more.

Further, in the case where the structure 57 and the nonwoven fabric structure having a large number of through holes 56 are subjected to yttrium imidization or thermal hardening, the above 90° peeling peeling force means fixing to twin crystals. The peeling force is peeled off at 90° in the state of the circle (for example, after hydrazine imidization or after heat hardening). Specifically, the measurement can be carried out by the method described in the examples.

The through holes 56 and the plurality of holes of the nonwoven fabric structure may be filled with the adhesive composition or may not be filled. The second layer in which the low adhesion force can be easily formed by controlling the aperture ratio of the structure 57 or the density of the non-woven structure, etc., is preferably performed. Charge.

The adhesive composition for filling the through holes 56 or the plurality of holes of the nonwoven fabric is not particularly limited, and examples thereof include the above-mentioned polyimine resin and the above-mentioned polyoxymethylene resin.

The adhesion of the second layer 51 is lower than the adhesion of the first adhesive layer 50. Regarding the adhesion force of the second layer 51, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the tantalum wafer is preferably less than 0.30 N/20 mm, more preferably 0.20 N. /20mm or less. If it is less than 0.30 N/20 mm, the second layer 51 can be easily peeled off. The lower limit of the 90° peeling peeling force is preferably as low as possible, but is preferably 0 N/20 mm or more, more preferably 0.001 N/20 mm or more, further preferably 0.01 N/20 mm or more, and particularly preferably 0.10 N/20 mm or more. .

The adhesion of the second layer 51 can be made by the aperture ratio of the structure 57 or the density of the non-woven structure, the type of the adhesive composition filled in the through holes 56 or the plurality of holes of the nonwoven fabric, the material of the structure 57, and the like. And adjust it.

As shown in Fig. 54, the succeeding sheet 5 may be formed with other layers. Fig. 54 is a cross-sectional view showing the back sheet 5 of the third layer 55. The third layer 55 is formed in the succeeding sheet 5 of FIG. 54 over the peripheral portion 54 and the central portion 53. The adhesion of the third layer 55 is lower than the adhesion of the first adhesive layer 50.

When the surface including only the third layer 55 is attached to the semiconductor wafer or the susceptor, the adhesive sheet 5 can be easily peeled off. Moreover, the paste residue on the semiconductor wafer or the susceptor can be eliminated, and the cleaning step can be omitted.

The adhesion of the third layer 55 is not particularly limited as long as it is lower than the adhesion of the first adhesive layer 50. For example, the 90° peeling peeling force for the tantalum wafer under the conditions of a temperature of 23±2° C. and a peeling speed of 300 mm/min is preferably less than 0.30 N/20 mm, more preferably 0.20 N/20 mm or less. If it is less than 0.30 N/20 mm, it can be peeled off without a paste, and the washing step of a semiconductor wafer or the like can be omitted. Further, the lower limit of the 90° peeling peeling force is not particularly limited, and is, for example, 0 N/20 mm or more, and preferably 0.001 N/20 mm or more. If it is 0N/20mm or more, the semiconductor wafer can be held on the susceptor.

As the material constituting the third layer 55, the adhesion force of the third layer 55 is lower than the first one. The method of selecting the adhesive force of the agent layer 50 is not particularly limited. For example, the above polyimine resin and the above polyoxyxylene resin can be preferably used. Among them, the above-mentioned polyimine resin is preferred in terms of heat resistance, drug resistance, and paste residue.

The method of manufacturing the sheet 5 is not particularly limited. For example, it can be manufactured by coating a structure 57 having a large number of through holes 56 and its surroundings (a region around the structure 57) with a solution containing a composition for forming the first adhesive layer 50, using the above The solution fills the through hole 56 and forms a coating layer on the structure 57 and around the structure 57. In this method, the coating layer formed around the structure 57 becomes the first adhesive layer 50 of the peripheral portion 54.

In the case where the second layer 51 has a nonwoven fabric structure as a skeleton, it can be produced by applying a composition for forming the first adhesive layer 50 to the nonwoven fabric structure and the periphery thereof. The solution fills a plurality of pores of the nonwoven fabric structure with the above solution and forms a coating layer on the structure and around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 50 of the peripheral portion 54.

The viscosity of the applied solution can be appropriately set. The coating amount may be appropriately set.

[Embodiment 2]

The adhesive sheet of the fifth invention is not limited to the shape of the adhesive sheet 5. Figure 55 is a cross-sectional view showing the back sheet 6 of the second embodiment. Figure 56 is a plan view of the back sheet 6 of the second embodiment. As shown in FIGS. 55 and 56, the succeeding sheet 6 is formed by the first adhesive layer 60, and the central portion 63 which is further inside than the peripheral portion 64 is made of a structure having a large number of through holes 66 as a skeleton. Layer 61 is formed. The adhesion of the second layer 61 is lower than the adhesion of the first adhesive layer 60.

Further, the second layer 61 may be a non-woven fabric structure as a skeleton.

The semiconductor wafer or the susceptor can be favorably fixed by the surface having the first adhesive layer 60 and the second layer 61.

Then, since the sheet 6 has the second layer 61 having a lower adhesion force, the susceptor can be easily self-sustained from the semiconductor wafer by external force, for example, by cutting the first adhesive layer 60 or lowering the adhesion force. Separation. In the subsequent sheet 6, since the first adhesive layer 60 is formed on the peripheral portion 64, the first adhesive layer 60 can be easily cut or the adhesion of the first adhesive layer 60 can be lowered, and the separation can be easily performed.

The thickness of the sheet 6 is not particularly limited, and examples thereof include those exemplified in the sheet 5 of the first embodiment.

As shown in Fig. 56, the shape of the succeeding sheet 6 in a plan view is circular. The diameter of the sheet 6 is not particularly limited, and examples thereof include those exemplified in the sheet 5 of the first embodiment. Moreover, the area of the second layer 61 when the sheet 6 is viewed in plan is not particularly limited, and examples thereof include those exemplified in the sheet 5 of the first embodiment.

The adhesive force of the first adhesive layer 60 is exemplified as the first adhesive layer 50.

The description of the first adhesive layer 60 is the same as that of the first adhesive layer 50.

The adhesive force of the second layer 61 is exemplified as the second layer 51.

The description of the second layer 61 is the same as that of the second layer 51.

The method of manufacturing the sheet 6 is not particularly limited. For example, it can be produced by coating a structure having a large number of through holes 66 and its surroundings (a region around the structure) with a solution containing a composition for forming the first adhesive layer 60, and filling with the above solution The through hole 66 is formed and a coating layer is formed around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 60 of the peripheral portion 64.

In the case where the second layer 61 has a nonwoven fabric structure as a skeleton, it can be produced by applying a composition for forming the first adhesive layer 60 to the nonwoven fabric structure and its periphery. The solution fills a plurality of pores of the nonwoven fabric structure with the above solution and forms a coating layer around the structure. In this method, the coating layer formed around the structure becomes the first adhesive layer 60 of the peripheral portion 64.

The viscosity of the applied solution can be appropriately set. The coating amount may be appropriately set.

[Embodiment 3]

The succeeding film of the fifth invention is not limited to the shape of the succeeding sheets 5 and 6. Figure 57 is a cross-sectional view showing the back sheet 7 of the third embodiment. As shown in FIG. 57, the back sheet 7 is formed by laminating the first adhesive layer 70 and the second layer 71 having a structure having a large number of through holes and/or a nonwoven structure as a skeleton. The adhesion of the second layer 71 is lower than the adhesion of the first adhesive layer 70.

Since the sheet 7 has the first adhesive layer 70, the semiconductor wafer can be favorably fixed to the susceptor. Further, since the second layer 71 having a lower adhesive force than the first adhesive layer 70 is provided, the susceptor can be easily separated from the semiconductor wafer by an external force. For example, a method of cutting a slit at the boundary between the first adhesive layer 70 and the second layer 71 and separating it may be mentioned.

The thickness of the first adhesive layer 70 is not particularly limited, and is, for example, 10 μm or more, and preferably 50 μm or more. When it is 10 μm or more, the unevenness on the surface of the semiconductor wafer can be followed, and the adhesive sheet 7 can be filled without any gap. Further, the thickness of the first adhesive layer 70 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage enthalpy during heating can be suppressed or prevented.

The thickness of the second layer 71 is not particularly limited, and is, for example, 1 μm or more, and preferably 5 μm or more. When it is 1 μm or more, it is easy to bond with the susceptor. Further, the thickness of the second layer 71 is, for example, 500 μm or less, preferably 300 μm or less. When it is 500 μm or less, uneven thickness or shrinkage enthalpy during heating can be suppressed or prevented.

Further, the shape when the sheet 7 is viewed in plan is not particularly limited, and is generally circular.

The adhesive force of the first adhesive layer 70 is exemplified as the first adhesive layer 50.

The description of the first adhesive layer 70 is the same as that of the first adhesive layer 50.

Regarding the adhesion force of the second layer 71, for example, the temperature of 23±2° C. and the peeling speed of 300 mm/min, the 90° peeling peeling force for the silicon wafer is preferably less than 0.30 N/20 mm, more preferably 0.20. N/20mm or less. If it is less than 0.30 N/20 mm, the susceptor can be easily separated from the semiconductor wafer. On the other hand, the lower limit of the 90° peeling peeling force is preferably 0.001. N/20 mm or more, more preferably 0.005 N/20 mm or more, further preferably 0.010 N/20 mm or more. When it is 0.001 N/20 mm or more, the semiconductor wafer can be favorably fixed to the susceptor, and back surface polishing or the like can be satisfactorily performed.

The description of the second layer 71 is the same as that of the second layer 51.

The method of manufacturing the sheet 7 is not particularly limited. For example, it can be manufactured by applying a solution containing a composition for forming the first adhesive layer 70 to a structure having a large number of through holes, filling the through holes with the above solution, and forming a coating layer on the structure. .

In the case where the second layer 71 has a nonwoven fabric structure as a skeleton, it can be produced by applying a solution containing a composition for forming the first adhesive layer 70 to the nonwoven fabric structure. A plurality of holes of the nonwoven fabric structure are filled with the above solution and a coating layer is formed on the structure.

The viscosity of the applied solution can be appropriately set. The coating amount may be appropriately set.

In the above description, the back sheets 5 to 7 having a circular shape in plan view have been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or a circular shape.

Moreover, the back sheets 5 to 7 in which the shapes of the second layers 51, 61, and 71 are circular in plan view have been described. However, the shape is not particularly limited, and may be other shapes such as a polygonal shape or a circular shape.

The fifth embodiment of the semiconductor device manufacturing of the present invention can be used to fix a semiconductor wafer on a susceptor. Specifically, it can be preferably used in a method of manufacturing a semiconductor device to be described later.

[Method of Manufacturing Semiconductor Device]

A method of manufacturing a semiconductor device according to a fifth aspect of the invention includes the steps of: fixing a semiconductor wafer to a susceptor using a bonding sheet; and separating the susceptor from the semiconductor wafer.

In the following description, the case where the back sheet 5 of the first embodiment is used will be described. Fig. 58 is a schematic view showing a state in which the semiconductor wafer 3 is fixed to the susceptor 1 by using the bonding sheet 5 of the first embodiment.

First, a step of fixing the semiconductor wafer 3 to the susceptor 1 using the bonding sheet 5 is performed. Specifically, the surface on which the first adhesive layer 50 and the second layer 51 of the adhesive sheet 5 are exposed is attached to the susceptor 1, and the surface on which only the first adhesive layer 50 of the adhesive sheet 5 is exposed is attached to the semiconductor. The circuit of the wafer 3 is formed on the surface.

As the semiconductor wafer 3, the semiconductor wafer 3 described in the first aspect of the invention can be preferably used. As the susceptor 1, the susceptor 1 described in the first aspect of the invention can be preferably used.

The attaching (fixing) method is not particularly limited, and is preferably crimping. The crimping is usually performed while being pressed by a pressing mechanism such as a pressure roller. The pressure bonding conditions are, for example, preferably 20 to 300 ° C, 0.001 to 10 MPa, and 0.001 to 10 mm/sec. The crimping time is usually 0.1 to 10 minutes.

After the pressure bonding, the first adhesive layer 50 is imidized as needed. Thereby, the semiconductor wafer 3 can be well fixed to the susceptor 1. The ruthenium imidization can be carried out by a conventionally known method, for example, ruthenium imidation can be carried out at 150 to 500 ° C for 0.5 to 5 hours.

Further, instead of the imidization of the first adhesive layer 50, the adhesive composition filled in the plurality of holes of the through-hole or the non-woven fabric may be imidized, or may have a structure having a large number of through-holes. The body or non-woven structure is subjected to hydrazine imidization.

Then, the semiconductor wafer 3 is back-polished. Back grinding can be carried out by a previously known method.

The thickness of the back-grinded semiconductor wafer is, for example, 1 to 300 μm, preferably 5 to 100 μm.

After the back surface polishing, the non-circuit forming surface (surface back-polished) of the semiconductor wafer 3 can be processed. Examples of the processing method include electrode formation, metal wiring formation, and formation of a protective film. Further, a tantalum penetration electrode can be formed by the processing.

After the back grinding or processing or the like, the susceptor 1 is separated from the semiconductor wafer 3.

The separation method is not particularly limited, and a method of separating the first adhesive layer 50 and separating it, and a method of reducing the adhesion of the first adhesive layer 50 and separating them are preferable.

The cutting method is not particularly limited, and for example, a method of cutting the first adhesive layer 50 by cutting a slit from the side surface of the succeeding sheet 5 toward the inside of the first adhesive layer 50. The cutting can be carried out by a previously known method such as a cutter or laser.

The method of reducing the adhesion force of the first adhesive layer 50 is not particularly limited, and examples thereof include a method of dissolving the first adhesive layer 50 by a solvent, and forming a first adhesive layer by using a material whose adhesion is lowered by heating in advance. 50. A method of reducing the adhesion force by heating or the like.

In the above description, as a method of fixing the semiconductor wafer 3 to the susceptor 1 by using the adhesive sheet 5, the surface on which the first adhesive layer 50 and the second layer 51 of the adhesive sheet 5 are exposed is attached to the susceptor 1. The method of attaching the exposed surface of the first adhesive layer 50 of the sheet 5 to the circuit formation surface of the semiconductor wafer 3 has been described. However, the method of fixing the semiconductor wafer 3 to the susceptor 1 by using the bonding sheet 5 is not particularly limited, and the surface on which only the first adhesive layer 50 of the bonding sheet 5 is exposed may be attached to the susceptor 1 and A method of attaching the exposed surface of the first adhesive layer 50 and the second layer 51 of the bonding sheet 5 to the circuit formation surface of the semiconductor wafer 3, and the like.

Moreover, the case where the circuit formation surface and the non-circuit formation surface are used as the semiconductor wafer 3 has been described. However, it is not limited to those having a circuit forming surface and a non-circuit forming surface, and may be a non-circuit forming surface on both sides.

[Examples]

Hereinafter, the first to fifth inventions will be described in detail using the examples, but the first to fifth inventions are not limited to the following examples as long as they do not exceed the gist of the invention.

<<First Embodiment of the Invention>>

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

Spacer (long strip polyester film treated with polyxylene stripper on one side: thickness 38μm)

Long polyester film (thickness 25μm)

The following film was produced by the following method.

Examples 1, 5 <Preparation of Solution for First Adhesive Layer and Solution for Second Layer>

D-4000 258.25 g, DDE 78.95 g, and PMDA 100 g were mixed in DMAc 929.05 g at 70 ° C under an atmosphere of nitrogen gas to obtain a solution for the first adhesive layer (polyglycine solution A). . The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer (polyglycine solution B) was obtained by the same method as the solution for the first adhesive layer except for the composition of Table 1. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

<Production of round sheet>

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having the second layer.

A long strip of polyester film was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was left (the inside of the Thompson mold was punched) to remove the outer side, thereby obtaining a circle. Shaped sheet. Further, the above-mentioned half-cut refers to a cutting in which the polyester film and the second layer are completely cut and the separator is not completely cut (cut into the middle of the separator).

<Next film production>

The polyester film of the circular sheet was peeled off, and the solution for the first adhesive layer was applied onto the second layer of the circular sheet so as to have a diameter of 200 mm or more, and dried at 90 ° C for 3 minutes. bell. A long polyester film was laminated on the dried first adhesive layer to obtain a back sheet having the shape of the first embodiment shown in Figs.

The sheet then has a diameter of 200 mm and a thickness of 100 μm. The second layer has a diameter of 198 mm and the second layer has a thickness of 2 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet was 98 μm.

Example 2 <Preparation of solution for the first adhesive layer>

The solution for the first adhesive layer was obtained in the same manner as in Example 1 except for the composition according to Table 1.

<Next film production>

On the SUS foil (manufactured by Toyo Sewing Co., Ltd., SUS 304H-TA), copper plating with a copper sulfate plating bath was performed so that the Cu film thickness was 0.5 μm, and a copper-plated SUS foil was obtained. Cooling was carried out until the obtained copper-plated SUS foil became room temperature (23 ° C).

The first adhesive layer of the composition of Table 1 was applied onto a copper-plated SUS foil with a solution and dried at 90 ° C for 2 minutes. Then, the SUS foil was peeled off to obtain a copper-plated polyamic acid layer. The obtained copper plated polyamic acid layer was subjected to Cu etching. Thereby, the copper plating portion (the second layer) having a circular shape (195 mm in diameter) remains, and the other portions are removed. From the above, the back sheet of the shape of the first embodiment shown in Figs. 1 and 2 was obtained.

Next, the entire sheet had a diameter of 200 mm and a thickness of 120 μm. The second layer has a diameter of 195 mm and the second layer has a thickness of 0.5 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet was 119.5 μm.

Further, in the second embodiment, the shape of the second layer is formed on the first adhesive layer when the adhesive sheet is formed (the shape of the first adhesive layer does not exist on the side surface side of the second layer), but The second layer is 0.5 μm and thinner. On the other hand, the first adhesive layer is 120 μm thick and the first adhesive layer is relatively soft (low elastic modulus), so when used, by pressure The second layer is embedded in the first adhesive layer. Therefore, the sheet of Example 2 has the cross-sectional shape shown in Fig. 1.

Example 3

The back sheet was obtained in the same manner as in Example 1 except for the aspect according to the composition of Table 1.

Example 4 <Production of round sheet>

The solution for the second layer produced in Example 1 was applied onto a separator, and dried at 90 ° C for 3 minutes to obtain a sheet having the second layer.

A long strip of polyester film was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was left (the inside of the Thompson mold was punched) to remove the outer side, thereby obtaining a circle. Shaped sheet (thickness: 200 μm).

<Next film production>

The solution of the first adhesive layer produced in Example 1 was applied onto a separator, and dried at 90 ° C for 3 minutes to obtain a sheet having the first adhesive layer.

A long polyester film was laminated on the first adhesive layer of the obtained sheet, and half-cut into a diameter of 198 mm by a Thompson mold, and the outer portion was left to remove the punched portion (the inside of the Thompson mold was punched), thereby obtaining a hollow. Sheet (thickness: 200 μm).

The separator of the circular sheet and the hollow sheet is peeled off, and the second layer of the circular sheet is embedded so as to be bonded to the portion of the hollow sheet where the first adhesive layer is not present, thereby obtaining FIG. A sheet of the shape of the second embodiment shown in FIG.

The sheet then has a diameter of 200 mm and a thickness of 200 μm. The second layer has a diameter of 198 mm and the second layer has a thickness of 200 μm.

Comparative example 1

A single sheet comprising a single layer of the same first adhesive layer as in Example 1 was obtained. The sheet was then round, 200 mm in diameter and 150 μm thick.

[Measurement of the adhesion force of the first adhesive layer]

The first adhesive layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having a first adhesive layer having a thickness of 20 μm.

The first adhesive layer of the obtained sheet was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain the first wafer with a ruthenium wafer. Then the agent layer.

The first adhesive layer with a ruthenium wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peeling was performed at a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). Evaluation. The results are shown in Table 1.

[Measurement of the adhesion of the second layer]

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having a second layer having a thickness of 20 μm.

The second layer of the obtained sheet was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a second layer with a tantalum wafer.

The second layer with the ruthenium wafer was processed to have a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 1.

Further, regarding the adhesion of the second layer of Example 2, the second layer was bonded to the 8 Å wafer, and the 90° peeling evaluation was performed.

[Process tolerance evaluation] Example 1~4

The first adhesive layer and the exposed surface of the second layer of the succeeding films of Examples 1 to 4 were attached to a susceptor (a wafer having a diameter of 200 mm and a thickness of 726 μm). The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa.

Then, the subsequent side of the susceptor attached with the susceptor was attached to the circuit formation surface of the ruthenium wafer having a diameter of 200 mm and a thickness of 725 μm. Attached to a temperature of 90 ° C, a pressure of 0.1 MPa The lowering is carried out by roll lamination. After the attachment, the adhesive sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere. Thereby, a laminated body in which a susceptor, a bonding sheet, and a germanium wafer are sequentially laminated is obtained.

The back surface polishing is performed by using the obtained laminated body, and the back surface polishing can be sufficiently fixed in the back surface polishing, and the back surface polishing can be satisfactorily evaluated as ○, and the ruthenium wafer cannot be sufficiently fixed and the back surface polishing cannot be performed. The evaluation is ×.

Example 5

The process resistance was evaluated by the same method as in Examples 1 to 4 except that the surface on which only the first adhesive layer was exposed was attached to the susceptor.

Comparative example 1

The laminate was obtained by the same method as in Examples 1 to 4 and the process tolerance was evaluated.

The results are shown in Table 1.

[Peeability evaluation]

A laminate in which a susceptor, a succeeding film, and a germanium wafer are sequentially laminated is obtained by the same method as the above-described process resistance evaluation.

The incision was made inward from the side of the subsequent sheet using a Thompson knife. The slit is cut to the second layer. After the slit, the tantalum wafer was adsorbed upward using a vacuum tweezers disposed on the upper side of the laminate (on the side of the wafer). The case where adsorption was possible was evaluated as ○, and the case where adsorption was impossible was evaluated as ×. The results are shown in Table 1.

In Examples 1 to 5, the tantalum wafer can be sufficiently fixed and good back grinding can be performed. Further, by cutting the slit, the crucible wafer can be easily separated from the susceptor. On the other hand, in Comparative Example 1, even if the slit was cut out on the subsequent sheet, peeling could not be performed.

<<The second embodiment of the invention>>

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

Spacer (long strip polyester film treated with polyxylene stripper on one side: thickness 38μm)

The following film was produced by the following method.

Example 1

Under the nitrogen gas stream, D-4000 239.8 g, DDE 79.9 g, and PMDA 100.0 g were mixed in DMAc 1912.0 g at 70 ° C to carry out a reaction to obtain a first adhesive layer solution (polyglycine solution A). ). The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer (polyglycine solution B) was obtained by the same method as the solution for the first adhesive layer except for the composition according to Table 2. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having the second layer. A solution for the first adhesive layer was applied onto the obtained sheet and dried at 90 ° C for 3 minutes to form a first adhesive layer. Thereby, a laminate in which the first adhesive layer and the second layer are laminated is obtained.

Next, the entire sheet has a diameter of 200 mm and a thickness of 100 μm.

The first adhesive layer had a diameter of 200 mm and a thickness of 90 μm.

The second layer has a diameter of 200 mm and a thickness of 10 μm.

Example 2~3

An adhesive sheet was obtained by the same method as in Example 1 except for the aspect according to the composition of Table 2.

Comparative example 1

A back sheet (single layer) containing the first adhesive layer was obtained using the solution for the first adhesive layer of Example 1. The sheet was then round, 200 mm in diameter and 150 μm thick.

[Measurement of the adhesion force of the first adhesive layer]

The first adhesive layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having a first adhesive layer having a thickness of 20 μm.

The first adhesive layer of the obtained sheet was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain the first wafer with a ruthenium wafer. Then the agent layer.

The first adhesive layer with a ruthenium wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peeling was performed at a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). Evaluation. The results are shown in Table 2.

[Measurement of the adhesion of the second layer]

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having a second layer having a thickness of 20 μm.

The second layer of the obtained sheet was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a second layer with a tantalum wafer.

The second layer with the ruthenium wafer was processed to have a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 2.

[Process tolerance evaluation] Example 1~3

The second layer of the succeeding sheets of Examples 1 to 3 was attached to a susceptor (a wafer having a diameter of 200 mm and a thickness of 726 μm). The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa.

Then, the subsequent side of the susceptor attached with the susceptor was attached to the circuit formation surface of the ruthenium wafer having a diameter of 200 mm and a thickness of 725 μm. The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa. After the attachment, the adhesive sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere. Thereby, a laminated body in which a susceptor, a bonding sheet, and a germanium wafer are sequentially laminated is obtained.

The back surface polishing is performed by using the obtained laminated body, and the back surface polishing can be sufficiently fixed in the back surface polishing, and the back surface polishing can be satisfactorily evaluated as ○, and the ruthenium wafer cannot be sufficiently fixed and the back surface polishing cannot be performed. The evaluation is ×.

Comparative example 1

The laminate was obtained by the same method as in Examples 1 to 3 and the process tolerance was evaluated.

The results are shown in Table 2.

[Peeability evaluation]

A laminate in which a susceptor, a succeeding film, and a germanium wafer are sequentially laminated is obtained by the same method as the above-described process resistance evaluation.

A slit (a slit of 1 mm from the end of the wafer) was cut out using a Thompson knife at the boundary between the first adhesive layer and the second layer. After the slit, the wafer was adsorbed upward using a vacuum tweezers disposed on the side of the wafer on the stack. The case where the first adhesive layer with the ruthenium wafer was peeled off from the laminate by adsorption was evaluated as ○, and the case where peeling could not be performed was evaluated as ×. The results are shown in Table 2.

<<The third embodiment of the invention>>

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

NMP: N-methyl-2-pyrrolidone

SD4587L: Poly-Aoxygen Adhesive (Delta) manufactured by Toray Dow Corning Co., Ltd.

Hardened type)

SRX-212: Platinum Catalyst manufactured by Toray Dow Corning Co., Ltd.

Spacer (long strip polyester film treated with polyxylene stripper on one side: thickness 38μm)

[Production of solution for sheet and adhesive layer] Example 1

Under the atmosphere of nitrogen gas, 29.5 g of D-4000, 90.3 g of DDE and 100.0 g of PMDA were mixed in DMAc 2528.0 g at 70 ° C and reacted to obtain a sheet for dissolution. Liquid (polyamine acid solution A). Cooling was carried out until the obtained sheet solution became room temperature (23 ° C). The sheet was coated with a solution on a separator and dried at 90 ° C for 3 minutes to obtain a sheet.

The obtained sheet had a diameter of 200 mm and a thickness of 100 μm.

A solution for an adhesive layer (polyglycine solution B) was obtained by the same method as the solution for a sheet except for the aspect according to the composition of Table 3. Cooling was carried out until the obtained solution for the adhesive layer became room temperature (23 ° C).

Examples 2 to 3, Comparative Example 1

A solution for a sheet and an adhesive layer was obtained by the same method as in Example 1 except for the composition according to Table 3.

[Measurement of the adhesion force of the sheet]

The sheet was applied onto the separator with a solution and dried at 90 ° C for 3 minutes to obtain a sample sheet 1 having a thickness of 20 μm. The obtained sample sheet 1 was attached to an 8 Å wafer, and yttrium imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a sample sheet 1 with a ruthenium wafer. The sample sheet 1 with the ruthenium wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peel evaluation was performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. . The results are shown in Table 3.

[Measurement of the adhesion force of the adhesive layer]

The adhesive layer was applied onto the separator with a solution and dried at 90 ° C for 3 minutes to obtain a sample sheet 2 having a thickness of 20 μm. After the obtained sample sheet 2 was attached to an 8-inch wafer, ruthenium imidization (Example 1, Comparative Example 1) or thermal curing (Examples 2 and 3) was carried out.

The ruthenium imidization was carried out at 300 ° C for 1.5 hours under nitrogen atmosphere.

The thermosetting was carried out at 150 ° C for 1 hour under atmospheric conditions.

The sample sheet 2 with the enamel wafer obtained therefrom was processed into a width of 20 mm and a length of 100 mm, and was subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. A 90° peel evaluation was performed. The results are shown in Table 3.

[Process tolerance evaluation] Example 1

The sheet was attached to a circuit forming surface of a tantalum wafer having a bevel having a diameter of 200 mm and a thickness of 725 μm. The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa. After the attachment, the sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere.

A pedestal having a slanted surface (a wafer having a diameter of 200 mm and a thickness of 726 μm) was attached to the back surface of the sheet surface to which the enamel wafer was attached. The attachment was carried out at a temperature of 120 ° C and a pressure of 0.3 MPa.

Then, a solution for the adhesive layer is applied between the sheet and the inclined surface portion of the susceptor, and dried and yttrium-imided to form an adhesive layer. Thereby, the sheet is fixed to the base.

According to the above, a laminate in which a susceptor, a sheet, and a tantalum wafer are sequentially laminated is obtained.

The back surface polishing is performed by using the obtained laminated body, and the back surface polishing can be sufficiently fixed in the back surface polishing, and the back surface polishing can be satisfactorily evaluated as ○, and the ruthenium wafer cannot be sufficiently fixed and the back surface polishing cannot be performed. The evaluation is ×.

Example 2~3

A laminate was obtained in the same manner as in Example 1 except that the thermal curing of the adhesive layer was carried out under the conditions of 150 ° C for 1 hour under an atmosphere of hydrazine imidization. The obtained laminate was used and evaluated in the same manner as in Example 1.

Comparative example 1

A laminate was obtained in the same manner as in Example 1 except that the solution for the adhesive layer was not applied. The obtained laminate was used and evaluated in the same manner as in Example 1. The results are shown in Table 3.

[Peeability evaluation]

The laminate was obtained in the same manner as the above process resistance evaluation.

As shown in Fig. 22, the slit is cut from the side of the sheet on the sheet until it reaches the slope of the base 1. Up to the part (incision depth 0.5mm).

After the slit, the wafer was adsorbed upward using a vacuum tweezers disposed on the side of the wafer on the stack. The case where the sheet coated with the tantalum wafer was peeled off by the self-assembled layer was evaluated as ○, and the case where the sheet could not be peeled off was evaluated as ×. The results are shown in Table 3.

<<The fourth embodiment of the invention>>

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

SD4587L: Polyoxygenated adhesive (additive hardening type) manufactured by Toray Dow Corning Co., Ltd.

SRX-212: Platinum Catalyst manufactured by Toray Dow Corning Co., Ltd.

Spacer (long strip polyester film treated with polyxylene stripper on one side: thickness 38μm)

Long polyester film (thickness 25μm)

Examples 1 to 5 and Comparative Example 1 will be described.

The following film was produced by the following method.

Examples 1, 5 <Preparation of Solution for First Adhesive Layer and Solution for Second Layer>

D-4000 258.25 g, DDE 78.95 g, and PMDA 100 g were mixed in DMAc 929.05 g at 70 ° C under an atmosphere of nitrogen gas to obtain a solution for the first adhesive layer (polyglycine solution A). . The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer (polyglycine solution B) was obtained by the same method as the solution for the first adhesive layer except for the composition according to Table 4. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

<Production of round sheet>

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having the second layer.

A long strip of polyester film was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was left (the inside of the Thompson mold was punched) to remove the outer side, thereby obtaining a circle. Shaped sheet. Further, the above-mentioned half-cut refers to a cutting in which the polyester film and the second layer are completely cut and the separator is not completely cut (cut into the middle of the separator).

<Next film production>

The polyester film of the circular sheet was peeled off, and the solution for the first adhesive layer was applied onto the second layer of the circular sheet so as to have a diameter of 200 mm or more, and dried at 90 ° C for 3 minutes. A long polyester film was laminated on the dried first adhesive layer to obtain a sheet having the shape shown in Figs.

The sheet then has a diameter of 200 mm and a thickness of 100 μm. The second layer has a diameter of 198 mm and the second layer has a thickness of 2 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet was 98 μm.

Example 2 <Preparation of solution for the first adhesive layer>

A solution for the first adhesive layer was obtained by the same method as in Example 1 except for the composition according to Table 4.

<Next film production>

On the SUS foil (manufactured by Toyo Sewing Co., Ltd., SUS 304H-TA), copper plating with a copper sulfate plating bath was performed so that the Cu film thickness was 0.5 μm, and a copper-plated SUS foil was obtained. Cooling was carried out until the obtained copper-plated SUS foil became room temperature (23 ° C).

The first adhesive layer of the composition of Table 4 was applied onto a copper-plated SUS foil with a solution and dried at 90 ° C for 2 minutes. Then, the SUS foil was peeled off to obtain a copper-plated polyamic acid layer. The obtained copper plated polyamic acid layer was subjected to Cu etching. Thereby, the copper plating portion (the second layer) having a circular shape (195 mm in diameter) remains, and the other portions are removed. According to the above, the shape of the sheet shown in Figs. 24 and 25 is obtained.

Next, the entire sheet had a diameter of 200 mm and a thickness of 120 μm. The second layer has a diameter of 195 mm and the second layer has a thickness of 0.5 μm. Next, the thickness of the first adhesive layer in the central portion of the sheet was 119.5 μm.

Further, in the second embodiment, the shape of the second layer is formed on the first adhesive layer when the adhesive sheet is formed (the shape of the first adhesive layer does not exist on the side surface side of the second layer), but The second layer is 0.5 μm and thinner. On the other hand, the first adhesive layer is 120 μm thick and the first adhesive layer is relatively soft (low elastic modulus), so when used, by pressure The second layer is embedded in the first adhesive layer. Therefore, the sheet of Example 2 has the cross-sectional shape shown in Fig. 24.

Example 3

The back sheet was obtained by the same method as in Example 1 except for the aspect according to the composition of Table 4.

Example 4 <Production of round sheet>

The solution for the second layer produced in Example 1 was applied onto a separator, and dried at 90 ° C for 3 minutes to obtain a sheet having the second layer.

A long strip of polyester film was laminated on the second layer of the obtained sheet, and half cut into a diameter of 198 mm by a Thompson mold, and the punched portion was left (the inside of the Thompson mold was punched) to remove the outer side, thereby obtaining a circle. Shaped sheet (thickness: 200 μm).

<Next film production>

The solution of the first adhesive layer produced in Example 1 was applied onto a separator, and dried at 90 ° C for 3 minutes to obtain a sheet having the first adhesive layer.

A long polyester film was laminated on the first adhesive layer of the obtained sheet, and half-cut into a diameter of 198 mm by a Thompson mold, and the outer portion was left to remove the punched portion (the inside of the Thompson mold was punched), thereby obtaining a hollow. Sheet (thickness: 200 μm).

The separator of the circular sheet and the hollow sheet is peeled off, and the second layer of the circular sheet is fitted to the portion of the hollow sheet where the first adhesive layer is not present, thereby obtaining FIG. , the shape of the film shown in 30.

The sheet then has a diameter of 200 mm and a thickness of 200 μm. The second layer has a diameter of 198 mm and the second layer has a thickness of 200 μm.

Comparative example 1

A single sheet comprising a single layer of the same first adhesive layer as in Example 1 was obtained. The sheet was then round, 200 mm in diameter and 150 μm thick.

[Measurement of the adhesion force of the first adhesive layer]

The first adhesive layer was applied onto the separator with a solution and dried at 90 ° C for 3 minutes. A sheet having a first adhesive layer having a thickness of 20 μm was obtained.

The first adhesive layer of the obtained sheet was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain the first wafer with a ruthenium wafer. Then the agent layer.

The first adhesive layer with a ruthenium wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peeling was performed at a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). Evaluation. The results are shown in Table 4.

[Measurement of the adhesion of the second layer]

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having a second layer having a thickness of 20 μm.

The second layer of the obtained sheet was bonded to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a second layer with a tantalum wafer.

The second layer with the ruthenium wafer was processed to have a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 4.

Further, regarding the adhesion of the second layer of Example 2, the second layer was bonded to the 8 Å wafer, and the 90° peeling evaluation was performed.

[Processability Evaluation (1)] Example 1~4

The first adhesive layer and the exposed surface of the second layer of the succeeding films of Examples 1 to 4 were attached to a susceptor (a wafer having a diameter of 200 mm and a thickness of 726 μm). The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa.

Then, the subsequent side of the susceptor attached with the susceptor was attached to the circuit formation surface of the ruthenium wafer having a diameter of 200 mm and a thickness of 725 μm. The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa. After the attachment, the adhesive sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere. In this way, a sequential pedestal and a contiguous sheet are obtained. And the laminate of the wafer.

The back surface polishing is performed by using the obtained laminated body, and the back surface polishing can be sufficiently fixed in the back surface polishing, and the back surface polishing can be satisfactorily evaluated as ○, and the ruthenium wafer cannot be sufficiently fixed and the back surface polishing cannot be performed. The evaluation is ×.

Example 5

The process resistance was evaluated by the same method as in Examples 1 to 4 except that the surface on which only the first adhesive layer was exposed was attached to the susceptor.

Comparative example 1

The laminate was obtained by the same method as in Examples 1 to 4 and the process tolerance was evaluated.

The results are shown in Table 4.

[Peeability evaluation (1)] Examples 1 to 5 and Comparative Example 1

A laminate in which a susceptor, a succeeding film, and a germanium wafer are sequentially laminated is obtained by the same method as the above-described process resistance evaluation.

The incision was made inward from the side of the subsequent sheet using a Thompson knife. The slit is cut to the second layer. After the slit, the tantalum wafer was adsorbed upward using a vacuum tweezers disposed on the upper side of the laminate (on the side of the wafer). The case where adsorption was possible was evaluated as ○, and the case where adsorption was impossible was evaluated as ×. The results are shown in Table 4.

Examples 6 to 8 and Comparative Example 2 will be described.

Example 6

Under a nitrogen gas stream, 239.8 g of D-4000, 79.9 g of DDE, and 100.0 g of PMDA were mixed in DMAc 1912.0 g at 70 ° C to carry out a reaction to obtain a solution for the first adhesive layer. The cooling was carried out until the obtained solution for the first adhesive layer became room temperature (23 ° C).

The solution for the second layer was obtained by the same method as the solution for the first adhesive layer except for the composition according to Table 5. The cooling was carried out until the obtained solution for the second layer became room temperature (23 ° C).

The second layer solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a sheet having the second layer. A solution for the first adhesive layer was applied onto the obtained sheet and dried at 90 ° C for 3 minutes to form a first adhesive layer. Thereby, a laminate in which the first adhesive layer and the second layer are laminated (the succeeding film of the shape shown in FIG. 33) is obtained.

Next, the entire sheet has a diameter of 200 mm and a thickness of 100 μm.

The first adhesive layer had a diameter of 200 mm and a thickness of 90 μm.

The second layer has a diameter of 200 mm and a thickness of 10 μm.

Examples 7-8

The back sheet was obtained in the same manner as in Example 6 except for the aspect according to the composition of Table 5.

Comparative example 2

A back sheet (single layer) including the first adhesive layer was obtained using the solution for the first adhesive layer of Example 6. The sheet was then round, 200 mm in diameter and 150 μm thick.

[Measurement of the adhesion force of the first adhesive layer]

The measurement was carried out by the above method. The results are shown in Table 5.

[Measurement of the adhesion of the second layer]

The measurement was carried out by the above method. The results are shown in Table 5.

[Processability Evaluation (2)] Examples 6-8, Comparative Example 2

The second layer of the succeeding sheets of Examples 6 to 8 was attached to a susceptor (a wafer having a diameter of 200 mm and a thickness of 726 μm). The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa.

Then, the subsequent side of the susceptor attached with the susceptor was attached to the circuit formation surface of the ruthenium wafer having a diameter of 200 mm and a thickness of 725 μm. The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa. After the attachment, the adhesive sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere. Thereby, a laminated body in which a susceptor, a bonding sheet, and a germanium wafer are sequentially laminated is obtained.

The back surface polishing is performed by using the obtained laminated body, and the back surface polishing can be sufficiently fixed in the back surface polishing, and the back surface polishing can be satisfactorily evaluated as ○, and the ruthenium wafer cannot be sufficiently fixed and the back surface polishing cannot be performed. The evaluation is ×.

For Comparative Example 2, the laminate was also obtained by the same method and the process tolerance was evaluated.

The results are shown in Table 5.

[Peeability evaluation (2)] Examples 6-8, Comparative Example 2

A laminate in which a susceptor, a succeeding film, and a germanium wafer are sequentially laminated is obtained by the same method as the above-described process resistance evaluation.

A slit (a slit of 1 mm from the end of the wafer) was cut out using a Thompson knife at the boundary between the first adhesive layer and the second layer. After the slit, the wafer was adsorbed upward using a vacuum tweezers disposed on the side of the wafer on the stack. The case where the first adhesive layer with the ruthenium wafer was peeled off from the laminate by adsorption was evaluated as ○, and the case where peeling could not be performed was evaluated as ×. The results are shown in Table 5.

Examples 9 to 11 and Comparative Example 3 will be described.

[Production of solution for sheet and adhesive layer] Example 9

Under a nitrogen gas stream, 29.5 g of D-4000, 90.3 g of DDE, and 100.0 g of PMDA were mixed in DMAc 2528.0 g at 70 ° C and reacted to obtain a solution for a sheet. Cooling was carried out until the obtained sheet solution became room temperature (23 ° C). The sheet was coated with a solution on a separator and dried at 90 ° C for 3 minutes to obtain a sheet.

The obtained sheet had a diameter of 200 mm and a thickness of 100 μm.

A solution for an adhesive layer was obtained by the same method as the solution for a sheet except for the aspect according to the composition of Table 6. Cooling was carried out until the obtained solution for the adhesive layer became room temperature (23 ° C).

Examples 10 to 11 and Comparative Example 3

A solution for a sheet and an adhesive layer was obtained by the same method as in Example 9 except for the composition according to Table 6.

[Measurement of the adhesion force of the sheet]

The sheet was applied onto the separator with a solution and dried at 90 ° C for 3 minutes to obtain a sample sheet 1 having a thickness of 20 μm. The obtained sample sheet 1 is attached to an 8-inch wafer, The sample sheet 1 with the ruthenium wafer was obtained by imidization in a nitrogen atmosphere at 300 ° C for 1.5 hours. The sample sheet 1 with the ruthenium wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peel evaluation was performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. . The results are shown in Table 6.

[Measurement of the adhesion force of the adhesive layer]

The adhesive layer was applied onto the separator with a solution and dried at 90 ° C for 3 minutes to obtain a sample sheet 2 having a thickness of 20 μm. After the obtained sample sheet 2 was attached to an 8-inch wafer, ruthenium imidization (Example 9, Comparative Example 3) or thermal curing (Examples 10 and 11) was carried out.

The ruthenium imidization was carried out at 300 ° C for 1.5 hours under nitrogen atmosphere.

The thermosetting was carried out at 150 ° C for 1 hour under atmospheric conditions.

The sample sheet 2 with the enamel wafer obtained therefrom was processed into a width of 20 mm and a length of 100 mm, and was subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. A 90° peel evaluation was performed. The results are shown in Table 6.

[Processability Evaluation (3)] Example 9

The sheet was attached to a circuit forming surface of a tantalum wafer having a bevel having a diameter of 200 mm and a thickness of 725 μm. The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa. After the attachment, the sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere.

A pedestal having a slanted surface (a wafer having a diameter of 200 mm and a thickness of 726 μm) was attached to the back surface of the sheet surface to which the enamel wafer was attached. The attachment was carried out at a temperature of 120 ° C and a pressure of 0.3 MPa.

Then, a solution for an adhesive layer is applied between the sheet and the inclined surface portion of the pedestal and dried to form a temporary fixing adhesive layer. Thereby, the sheet is fixed to the base.

According to the above, a laminate in which a susceptor, a sheet, and a tantalum wafer are sequentially laminated is obtained.

Back grinding using the obtained laminate, which is sufficient for back grinding The case where the back surface polishing was performed by fixing the silicon wafer was evaluated as ○, and the case where the silicon wafer could not be sufficiently fixed and the back surface polishing could not be performed was evaluated as ×.

Example 10~11

A laminate was obtained in the same manner as in Example 9 except that the thermal curing of the adhesive layer was carried out under the conditions of 150 ° C for 1 hour under an atmosphere of hydrazine imidization. The obtained laminate was used and evaluated in the same manner as in Example 9.

Comparative example 3

A laminate was obtained in the same manner as in Example 9 except that the solution for the adhesive layer was not applied. The obtained laminate was used and evaluated in the same manner as in Example 9.

The results are shown in Table 6.

[Peeability evaluation (3)]

The laminate was obtained in the same manner as the above process resistance evaluation.

As shown in Fig. 49, the slit was cut out from the sheet side from the sheet until it reached the slope portion of the susceptor 35 (the slit depth was 0.5 mm).

After the slit, the wafer was adsorbed upward using a vacuum tweezers disposed on the side of the wafer on the stack. The case where the sheet coated with the tantalum wafer was peeled off by the self-assembled layer was evaluated as ○, and the case where the sheet could not be peeled off was evaluated as ×. The results are shown in Table 6.

<<The fifth embodiment of the invention>>

The components used in the examples will be described.

PMDA: pyromellitic dianhydride (molecular weight: 218.1)

DDE: 4,4'-diaminodiphenyl ether (molecular weight: 200.2)

D-4000: Polyether diamine manufactured by Hatsuman (molecular weight: 4023.5)

DMAc: N,N-dimethylacetamide

NMP: N-methyl-2-pyrrolidone

D-2000: Polyether diamine manufactured by Hatsuman (molecular weight: 1990.8)

BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride

PPD: p-phenylenediamine

Spacer (long strip polyester film treated on one side by polyoxynitride stripper)

Example 1

Under a nitrogen gas stream, D-4000 365 g, DDE 74 g, and PMDA 100 g were mixed at 70 ° C in DMAc and reacted, and then cooled to room temperature (23 ° C) to obtain a first adhesive solution.

The second adhesive solution was obtained by the same method as the first adhesive solution except for the composition according to Table 7. The second adhesive solution was applied onto a separator, and dried at 90° C. for 3 minutes to form a sheet having a coating layer of the second adhesive solution, and then a large number of through-holes in the thickness direction of the sheet were formed to obtain voids. Sheet. The shape of the through hole when the hollow sheet was viewed from above was circular, and the area of each of the through holes when the hollow sheet was viewed was 78.5 μm ² . Each of the through holes has a diameter of 10 μm. The aperture ratio is 50%.

The first adhesive solution was applied to the perforated sheet and its surroundings (the region around the perforated sheet), and the through-hole was filled with the first adhesive solution to form a coating layer of the first adhesive solution. Thereafter, the film was dried at 90 ° C for 3 minutes to obtain a sheet of the shape of the embodiment 1 shown in Figs. 51 and 52.

The sheet then has a diameter of 200 mm and a thickness of 100 μm.

The second layer has a diameter of 196 mm and the second layer has a thickness of 1 μm.

Next, the thickness of the first adhesive layer in the central portion of the sheet was 99 μm.

Example 2

The first adhesive solution was obtained by the same method as in Example 1 except for the composition according to Table 7.

An adhesive sheet having the shape of the first embodiment shown in Figs. 51 and 52 was obtained by the same method as in Example 1 except that an aluminum mesh having an opening ratio of 80% was used instead of the porous sheet.

Next, the entire sheet had a diameter of 200 mm and a thickness of 120.5 μm.

The second layer has a diameter of 198 mm and the second layer has a thickness of 0.5 μm.

Next, the thickness of the first adhesive layer in the central portion of the sheet was 120 μm.

Example 3

In addition to the first adhesive solution and the second adhesive solution according to the composition of Table 7, the shape of the through-holes when the porous sheet is viewed in a plan view is triangular, and the area of each of the through holes is 7.0 mm ² . A laminate of the shape of the first embodiment shown in Figs. 51 and 52 was obtained in the same manner as in the first embodiment except that the aperture ratio was 10%.

The sheet then has a diameter of 200 mm and a thickness of 100 μm.

The second layer has a diameter of 197 mm and the second layer has a thickness of 1 μm.

Next, the thickness of the first adhesive layer in the central portion of the sheet was 99 μm.

Comparative example 1

The first adhesive solution was obtained by the same method as in Example 1 except for the composition according to Table 7.

The first adhesive solution was applied onto a separator and dried at 90 ° C for 3 minutes to obtain a continuous sheet comprising a single layer of the first adhesive. The sheet was then round, 200 mm in diameter and 150 μm thick.

[Measurement of the adhesion force of the first adhesive layer]

The surface of the adhesive sheet containing only the first adhesive layer (coating layer of the first adhesive solution) is attached The ruthenium-attached wafer was obtained by bonding to an 8 Å wafer and performing iridization in a nitrogen atmosphere at 300 ° C for 1.5 hours.

The backing sheet with the tantalum wafer was processed into a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 7.

[Measurement of the adhesion force of an empty hole sheet and an aluminum screen (structure having a large number of through holes)] Examples 1, 3

The porous sheets of Examples 1 and 3 were attached to an 8-inch wafer and imidized in a nitrogen atmosphere at 300 ° C for 1.5 hours to obtain a porous sheet with a ruthenium wafer. material.

The perforated sheet with the tantalum wafer was processed into a 20 mm width and a length of 100 mm, and a 90° peel evaluation was performed using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm/min. . The results are shown in Table 7.

Example 2

An aluminum screen attached to the enamel wafer was obtained by attaching an aluminum screen to an 8-inch wafer. The aluminum screen with the enamel wafer obtained was processed into a width of 20 mm and a length of 100 mm, and subjected to a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H) at a temperature of 23 ° C and 300 mm / min for 90 °. Peel evaluation. The results are shown in Table 7.

[Measurement of the adhesion of the second layer]

The second layer (including the porous sheet or the aluminum mesh and the second layer of the first adhesive filled in the through holes) is cut out from the succeeding sheet, and the cut second layer is attached to the 8th layer. The second layer with the ruthenium wafer was obtained by imidization on a wafer under a nitrogen atmosphere at 300 ° C for 1.5 hours.

The second layer with the ruthenium wafer was processed to have a width of 20 mm and a length of 100 mm, and a 90° peeling evaluation was performed under the conditions of a temperature of 23° C. and 300 mm/min using a tensile tester (manufactured by Shimadzu Corporation, Autograph AGS-H). The results are shown in Table 7.

[Process tolerance evaluation] Example 1~3

The first adhesive layer of the succeeding films of Examples 1 to 3 and the exposed surface of the second layer were attached to a susceptor (a wafer having a diameter of 200 mm and a thickness of 726 μm). The attachment was carried out by roll lamination at a temperature of 90 ° C and a pressure of 0.1 MPa.

Then, the subsequent side of the susceptor attached with the susceptor was attached to the circuit formation surface of the ruthenium wafer having a diameter of 200 mm and a thickness of 725 μm. The attachment was carried out at a temperature of 90 ° C and a pressure of 0.1 MPa. After the attachment, the adhesive sheet was imidized at 300 ° C for 1.5 hours under a nitrogen atmosphere. Thereby, a laminated body in which a susceptor, a bonding sheet, and a germanium wafer are sequentially laminated is obtained.

The back surface polishing is performed by using the obtained laminated body, and the back surface polishing can be sufficiently fixed in the back surface polishing, and the back surface polishing can be satisfactorily evaluated as ○, and the ruthenium wafer cannot be sufficiently fixed and the back surface polishing cannot be performed. The evaluation is ×.

Comparative example 1

The laminate was obtained by the same method as in Examples 1 to 3 and the process tolerance was evaluated.

The results are shown in Table 7.

[Peeability evaluation]

A laminate in which a susceptor, a succeeding film, and a germanium wafer are sequentially laminated is obtained by the same method as the above-described process resistance evaluation.

The incision was made inward from the side of the subsequent sheet using a Thompson knife. The slit is cut to the second layer. After the slit, the tantalum wafer was adsorbed upward using a vacuum tweezers disposed on the upper side of the laminate (on the side of the wafer). The case where adsorption was possible was evaluated as ○, and the case where adsorption was impossible was evaluated as ×. The results are shown in Table 7.

5‧‧‧Next film

50‧‧‧1st adhesive layer

51‧‧‧2nd floor

53‧‧‧Central Department

54‧‧‧ peripherals

Claims (6)

An adhesive sheet for manufacturing a semiconductor device, wherein the semiconductor wafer is fixed to a susceptor, and has a first adhesive layer and a second layer having a lower adhesion force than the first adhesive layer, at least The peripheral portion of the succeeding film for semiconductor device manufacturing is formed of the above-described first adhesive layer. The succeeding film for manufacturing a semiconductor device according to claim 1, wherein a central portion of the inner side of the peripheral portion is formed of a laminate of the first adhesive layer and the second layer. The succeeding film for manufacturing a semiconductor device according to claim 1, wherein a central portion of the inner side of the peripheral portion is formed by the second layer. The succeeding film for manufacturing a semiconductor device according to claim 1, wherein a third layer having a lower adhesion force than the first adhesive layer is formed over the peripheral portion and the central portion. A semiconductor device obtained by using the succeeding film for manufacturing a semiconductor device according to any one of claims 1 to 4. A method of manufacturing a semiconductor device, comprising: a step of fixing a semiconductor wafer to a susceptor using an underlying film for manufacturing a semiconductor device according to any one of claims 1 to 4; and locating said susceptor from said semiconductor The step of wafer separation.