JP2001230171A - Heat-treatment device and heat-treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformize in a wafer plane a total quantity of heat given to the wafer by a heater plate when heat-treating the wafer with the heater plate. SOLUTION: A first heat exchange member 70 and a second heat exchange member 80 are provided under a heater plate 65 within a post exposure baking device 44. The first and second heat exchange members 70 and 80 are incorporated with Peltier elements 71 and 81 respectively, so that both members 70 and 80 can be set at a specified temperature. In addition, the members 70 and 80 are provided with driving mechanisms 74 and 84 respectively, so that they can be elevated vertically. When a wafer W is heated, the members 70 and 80 are brought into contact with the hater plate 65 at the specified temperature and for a specified time. Therefore, the heat is exchanged between the heater plate 65 and heat exchange members, so that the excessive supply or shortage of heat quantity given to the wafer W due to the ununiformity of temperature in the plane of the heater plate 65 can be corrected.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus and a method for heating a substrate.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of semiconductor devices, a heat treatment (pre-baking) after applying a resist solution on the surface of a semiconductor wafer (hereinafter, "wafer") and a pattern exposure are performed. Various heat treatments, such as a subsequent heat treatment (post-exposure baking), are performed.

[0003] These heat treatments are usually performed by a heat treatment device. This heat treatment apparatus has a thick disk-shaped hot plate in a processing vessel.
A heater serving as a heat source of the hot plate is built in a predetermined pattern. Then, the heating plate is heated to a predetermined temperature by a heater, and the wafer is placed on the heating plate, thereby performing a heating process on the wafer.

In the above-described heat treatment, the amount of heat applied to the wafer affects the line width of a circuit pattern finally formed on the wafer, so that it is necessary to uniformly heat the wafer. Therefore, the predetermined pattern of the heater is formed, for example, concentrically, and is formed so that the temperature on the hot plate is made as uniform as possible over the entire hot plate so that the wafer is uniformly heated over the entire surface. Have been.

[0005]

However, it is extremely difficult to form a heater pattern so that the temperature on the hot plate becomes uniform, and in practice, the temperature on the hot plate is not uniform. In particular, the central portion of the hot plate is difficult to dispose because heat interference and conduction are complicated.

[0006] Unless the temperature in the plane of the hot plate becomes uniform, a difference occurs in the in-plane temperature of the wafer placed on the hot plate,
As a result, the history of the amount of heat given to the wafer in the heat treatment differs for each portion of the wafer. Therefore, since the wafer is not uniformly heated, the line width of a circuit pattern formed on the wafer varies.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and when heating a substrate such as a wafer with a hot plate, the total amount of heat applied from the hot plate to the substrate is made uniform within the substrate plane. It is an object of the present invention to provide a heat treatment apparatus and a heat treatment method that can perform the heat treatment.

[0008]

According to the first aspect of the present invention, there is provided a heat treatment apparatus having a hot plate for mounting a substrate thereon and heating the substrate, wherein the heat processing device is provided in contact with a part of the hot plate. A heat treatment apparatus for a substrate, comprising: a heat exchange member that transfers heat between at least a part of the heat plate and the heat exchange member.

As described above, by providing the heat exchange member for transferring heat to and from the hot plate in contact with a part of the hot plate, for example, unevenness occurs in the temperature in the hot plate surface. In such a case, the heat exchange member is brought into contact with a portion of the hot plate having a lower temperature and a lower heating capacity than other portions, thereby making it possible to replenish insufficient heat as compared with other portions of the hot plate. In addition, the heat exchange member is brought into contact with a portion of the hot plate where the temperature is higher than other portions and the heating capacity is excessive, so that the heat exchange member receives the excess heat and reduces the calorie of the hot plate. Can also. As a result, the amount of heat that can be supplied to the substrate is the same over the entire surface of the hot plate, so that the substrate to be heated thereby is also uniformly heated. The heat exchange member is
A member that maintains a predetermined temperature and includes not only a heat exchange member having a temperature changing function but also a member that is brought to a predetermined temperature by an external device.

[0010] In the invention of claim 1, claim 2
The heat exchange member may be configured to be able to set a predetermined temperature. As described above, by providing the temperature setting function in the heat exchange member, when the temperature in the surface of the hot plate is uneven as described above, the excess or deficiency of the amount of heat generated by the temperature difference on the hot plate is determined. Correction can be made according to the temperature difference. Note that the heat exchange member is configured to be settable to a predetermined temperature not only when the heat exchange member can be simply set to the predetermined temperature, but also when the heat exchange member is set to the predetermined temperature and then the heat exchange member is set. Is maintained at the predetermined temperature.

According to a third aspect of the present invention, the part of the hot plate according to the first or second aspect is a central portion of the hot plate corresponding to a central portion of the substrate. Is provided. As described above, it is difficult to make the temperature of the central portion of the hot plate equal to that of other portions. Therefore, the heat exchange member can be brought into contact with the center of the hot plate so that the amount of heat at the center of the hot plate can be adjusted. As a result, the total amount of heat finally given to the substrate can be made uniform within the plane of the substrate.

In each of the above heat treatment apparatuses,
As described above, the heat exchange member may be configured to be movable up and down, and may be capable of contacting with and detaching from the hot plate. In this way, by making the heat exchange member vertically movable and making it possible to come into contact with and detach from the hot plate, the heat exchange member can come into contact with the hot plate at a predetermined timing and be separated from the hot plate at a predetermined timing. Therefore, the most effective time, for example,
Immediately before the substrate is placed on the hot plate, heat can be supplied to the hot plate or the heat can be removed. In addition, the heat exchange member can be kept in contact with the hot plate for a time during which the amount of heat finally given to the substrate becomes uniform within the plane of the substrate.

In the first aspect of the present invention, in the fifth aspect,
As described above, a plurality of the heat exchange members may be provided. By providing a plurality of heat exchange members in this way, it is possible to cope with a case where there are a plurality of portions of temperature variation in the hot plate surface. For example, if one part of the hot plate has a higher temperature than the other part, and another part of the hot plate has a lower temperature than the other part, the former and the latter have different temperatures. By contacting the replacement member, the heating capacity of the hot plate can be made the same over the entire hot plate. As a result, the total amount of heat supplied to the substrate heated by the hot plate matches, and the substrate is uniformly heated.

In the fifth aspect of the invention, the plurality of heat exchange members may be configured to be individually set to a predetermined temperature. By attaching a temperature setting function to each of the plurality of heat exchange members as described above, it is possible to set a temperature for supplying or absorbing heat as required for each heat exchange member. Note that the set temperature of each heat exchange member may be the same or different.

Further, according to a seventh aspect of the present invention, the plurality of heat exchange members are individually configured to be vertically movable, and are capable of coming into contact with and detaching from the hot plate. Is provided. In this way, by making the above-mentioned plurality of heat exchange members individually movable up and down individually and making it possible to come into contact with and detach from the hot plate, each heat exchange member rises at a predetermined timing and is moved to the hot plate. It can come in contact, separate from the hot plate at each timing, and descend.
Therefore, each heat exchanging member can individually exchange heat with a part of the hot plate corresponding to each heat exchanging member, and the heating capacity of the entire hot plate is corrected so as to be constant in the substrate plane. It is possible. As a result, the total amount of heat finally given to the substrate becomes uniform in the substrate surface, and uniform heat treatment is performed. Note that the timing of contact and separation of each heat exchange member with the hot plate may be simultaneous or different.

Further, according to the present invention, one of the plurality of heat exchange members contacts a central portion of the hot plate corresponding to a central portion of the substrate, and at least contacts the central portion of the hot plate. A heat treatment apparatus for a substrate is provided, which is a heat exchange member that transfers heat between the substrates.

As described above, since the temperature of the central portion of the hot plate is particularly difficult to adjust, it is necessary to correct the total amount of heat applied to the substrate by the heat exchange member. Therefore, according to the present invention, a heat exchange member is provided in contact with the central portion of the hot plate to supply heat to the central portion of the hot plate or to absorb heat from the central portion of the hot plate to provide heat to the substrate. The total amount of heat is corrected.

In each of the above heat treatment apparatuses,
The heat exchange member may be a heating member.
As described above, the heat exchange member may be limited to a heating member, and only the heating member may be used to correct the total amount of heat finally given to the substrate so as to be uniform in the substrate surface.

On the other hand, the heat exchange member may be a heating / cooling member. By using the heat exchange member as a heating / cooling member in this way, heat can be applied to the substrate via the hot plate, but heat is absorbed from the hot plate so as not to apply unnecessary heat to the substrate. be able to.

Further, in the invention of claim 10,
The heat exchange member may include an electronic cooling element. By having the electronic cooling element in this way, the heat exchange member can be heated to a predetermined temperature or cooled. Therefore, it can suitably fulfill the role of the above-mentioned heat exchange member.

According to a twelfth aspect of the present invention, there is provided a heat treatment method for heating a substrate with a hot plate heated to a predetermined temperature, wherein at least a part of the hot plate is A step of contacting a heat exchange member that transfers heat between the heat exchange member and a step of separating the heat exchange member from the hot plate.

As described above, by bringing the heat exchange member into contact with a part of the hot plate and transferring heat to and from the part of the hot plate, the temperature within the hot plate surface is not uniform. In such a case, a predetermined amount of heat is supplied to the portion of the uneven hot plate,
Alternatively, a predetermined amount of heat can be deprived, and the total amount of heat finally given to the substrate from the hot plate can be corrected so as to be uniform. Therefore, the substrate is uniformly heated within the substrate surface, and a predetermined heat treatment is suitably performed. The heat exchange member may be detached from the hot plate during the heat treatment of the substrate or after the heat treatment of the substrate is completed and the substrate is removed from the hot plate.

According to a twelfth aspect of the present invention, as in the thirteenth aspect, the step of bringing the heat exchange member into contact with the hot plate includes:
The heating may be performed simultaneously with the start of the heating of the substrate on the hot plate, or may be performed before the heating of the substrate is started.

According to the knowledge of the inventor, most of the difference in the total amount of heat applied to the substrate during the heat treatment is at the initial stage when the heating of the substrate is started. This is because the time has passed since the substrate heating started,
This is because even if the temperature of the hot plate is partially different, the difference is reduced by heat conduction. Therefore, by contacting the heat exchange member with the hot plate at the same time as or before the heating of the substrate is started on the hot plate, and eliminating the difference in the amount of heat in the initial stage of heating the substrate, The total amount of heat applied to the substrate during the heating process is corrected, and the substrate is uniformly heated within the substrate surface. In Claims 13 and 14, the timing at which the heat exchange member is brought into contact with the hot plate is set at the same time as or before the time when the heating of the substrate is started, but even after the heating of the substrate is started. Good.

According to claim 15, claims 12 to 14
Wherein the step of bringing the heat exchange member into contact with the hot plate is a step of heating the hot plate. Thus, the step of transferring the heat by bringing the heat exchange member into contact with the hot plate is limited to the step of heating the hot plate. The total amount of heat to be obtained may be corrected so as to be uniform in the substrate surface.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view of a coating and developing processing system 1 having a heat treatment apparatus according to the present embodiment, FIG. 2 is a front view of the coating and developing processing system 1, and FIG. FIG.

As shown in FIG. 1, the coating and developing system 1 carries in and out, for example, 25 wafers W from the outside into the coating and developing system 1 in units of cassettes, and carries in and out the wafers W into and from the cassette C. A cassette station 2 for unloading, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-sheet type in a coating and developing processing step are arranged in multiple stages, and provided adjacent to the processing station 3. An interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown) is integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a row in the X direction (the vertical direction in FIG. 1) at predetermined positions on a cassette mounting table 5 serving as a mounting portion. Then, the cassette arrangement direction (X direction) and the wafer arrangement direction (Z
(A vertical direction) is provided movably along a transfer path 8 so that each cassette C can be selectively accessed.

The wafer carrier 7 has an alignment function for positioning the wafer W. The wafer carrier 7 is configured so as to be able to access the extension devices 32 belonging to the third processing device group G3 on the processing station 3 side as described later.

In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to constitute a processing device group. In the coating and developing system 1,
Four processing unit groups G1, G2, G3, and G4 are disposed. The first and second processing unit groups G1 and G2 are disposed on the front side of the development processing system 1, and the third processing unit group G3 is disposed.
Is located adjacent to the cassette station 2 and the fourth
The processing unit group G4 is disposed adjacent to the interface unit 4. Further, a fifth processing unit group G5 indicated by a broken line as an option can be separately arranged on the back side. The main transfer device 13 is provided with these processing device groups G1.
Wafers W can be loaded and unloaded to and from various processing apparatuses described below arranged at G5.

In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 for coating a resist solution on the wafer W, and a developing unit 18 for supplying a developing solution to the wafer W for processing. Are arranged in two stages from the bottom. Similarly, in the case of the second processing unit group G2, similarly, the resist coating unit 19 and the developing unit 20 are stacked in two stages from the bottom.

In the third processing unit group G3, for example, as shown in FIG.
0, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, an extension device 32 for holding the wafer W on standby, pre-baking devices 33 and 34 for drying the solvent in the resist solution, and a heating process after the development process. Post-baking devices 35 and 36 to be applied are stacked in, for example, seven stages from the bottom.

The fourth processing unit group G4 includes, for example, a cooling device 40, an extension cooling device 41 for naturally cooling the mounted wafer W, an extension device 42, a cooling device 43, and a heating processing device according to the present embodiment. The post exposure baking devices 44 and 45, the post baking devices 46 and 47, etc. are stacked in order from the bottom in, for example, eight stages.

At the center of the interface section 4, a wafer carrier 50 is provided. The wafer transfer body 50 is configured to freely move in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction), and rotate in the θ direction (rotation direction about the Z axis). , Fourth processing unit group G4
, An extension cooling device 41, an extension device 42, a peripheral exposure device 51, and an unshown exposure device.

Next, the configuration of the above-described post-exposure baking device 44 will be described. As shown in FIG. 4, the post-exposure baking device 44
The casing 61 has a lid 62 which is located on the upper side and is movable up and down, and a hot plate accommodating portion 63 which is located on the lower side and forms a processing chamber S integrally with the lid 62.

The lid 62 has a substantially conical shape that gradually increases toward the center, and an exhaust portion 62a is provided at the top. The atmosphere in the processing chamber S is uniformly exhausted from the exhaust part 62a.

On the other hand, in the hot plate accommodating portion 63, a disc-shaped hot plate 65 for mounting and heating the wafer W at the center is provided. This hot plate 65 has a heater 66 as a heat source,
The heater 66 is controlled by a temperature controller (not shown) so that the heating plate 65 has a predetermined temperature. Also,
As shown in FIG. 5, the heater 66 is built in the heating plate 65 concentrically, and the heater 66 is arranged so as not to cause unevenness in the temperature of the surface of the heating plate 65 as much as possible.

However, in practice, as described above, it is difficult to make the temperature on the surface of the heating plate 65 uniform, and the pattern of the heater 66 may cause unevenness in temperature. In particular, the central portion of the hot plate 65 tends to have a temperature difference from other portions due to the difficulty in disposing the heater 66. In the present embodiment, a case will be described in which the temperature of both the central portion of the hot plate 65 and the peripheral portion of the hot plate 65 corresponding to the peripheral portion of the wafer W is lower than the other portions.

First, below the center of the hot plate 65, FIG.
As shown in FIG. 6, a disc-shaped first heat exchange member 70 for heating the hot plate 65 from below is provided. The first heat exchange member 70 has a Peltier element 71 as an electronic cooling / heating element, and the temperature of the Peltier element 71 is controlled by a temperature controller 73. Therefore,
The first heat exchange member 70 can be set and maintained at a predetermined temperature. Below the first heat exchange member 70, a first drive mechanism 74 that allows the first heat exchange member 70 to move up and down is provided. Then, the first drive mechanism 74 causes the first heat exchanging member 70 to rise at a predetermined timing, come into contact with the lower surface of the hot plate 65, separate from the lower surface of the hot plate 65 at a predetermined timing, and descend. Is configured. Therefore, even when the temperature of the central portion of the hot plate 65 is lower than that of the other portions, the insufficient amount of heat can be replenished from the first heat exchange member 70 to the central portion of the hot plate 65. .

A ring-shaped second heat exchange member 80 is provided below the hot plate 65 and at a position corresponding to the peripheral portion of the wafer W placed on the hot plate 65. The second heat exchange member 80 has a Peltier element 81 as an electronic cooling element similar to the first heat exchange member 70, and the Peltier element 81 is controlled by the temperature control device 73. Thus, the second heat exchange member 80 can be set and maintained at a predetermined temperature. Also,
The second heat exchange member 80 is configured to be movable up and down by a second drive mechanism 84 similarly to the first heat exchange member 70. Therefore, the second heat exchanging member 80 is raised by the second driving function 84 at a predetermined timing, comes into contact with the lower surface of the hot plate 65, separates from the lower surface of the hot plate 65 at a predetermined timing, and descends. Can be. The Peltier elements 71 and 81 are controlled by the same temperature controller 73, but the control is performed individually.

The hot plate 65 is supported at its peripheral edge by a supporting member 85, and a heat insulating material is used for the supporting member 85 so that the heat of the hot plate 65 does not escape to the outside. The support member 85 is supported by a substantially cylindrical support base 87 having an open upper surface. The support base 87 forms a space below the heat plate 65, and the first heat exchange member 70 and the second heat exchange member 80 described above are located in this space.

Further, the hot plate accommodating portion 63 is provided with a support member 85.
And a support ring 89 having a substantially cylindrical shape surrounding the support base 87. The support ring 89 has, for example, a blowing port 89 a for blowing an inert gas into the processing chamber S.
Is provided, and the inside of the processing chamber S can be purged. Outside the support ring 89, a cylindrical case 91 that is the outer periphery of the hot plate housing 63 is provided.

Further, a plurality of elevating pins 93 for supporting and elevating the wafer W when loading / unloading the wafer W are provided in the hot plate accommodating portion 63. This lifting pin 9
3 is movable up and down by a lifting drive mechanism 95,
The heating plate 65 is configured to penetrate the heating plate 65 from below and project above the heating plate 65. Therefore, the hot plate 65
A hole 97 through which the elevating pin 93 protrudes is provided. Further, a cylindrical guide 100 for protecting the elevating pin 93 from other heat generating members is attached to the outer periphery of the elevating pin 93.

Next, the operation of the post-exposure baking device 44 configured as described above will be described.
A description will be given together with the photolithography process performed in the coating and developing system 1.

First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the adhesion unit 31 belonging to the third processing unit group G3. In this adhesion apparatus 31, the wafer W coated with an adhesion enhancer such as HMDS for improving the adhesion with the resist solution is applied.
Is transported by the main transport unit 13 to the cooling device 30 and cooled to a predetermined temperature. After that, the wafer W is
Resist coating device 17 or 19, pre-baking device 34
Or, they are sequentially conveyed to 35 and subjected to predetermined processing. After that, the wafer W is transferred to the extension cooling device 4.
It is transported to 1.

Next, the wafer W is taken out of the extension cooling device 41 by the wafer transfer body 50, and then transferred to the exposure device (not shown) via the peripheral exposure device 51. The wafer W after the exposure processing is
After being transferred to the extension device 42 by the wafer transfer body 50, it is held by the main transfer device 13. Next, the wafer W is transferred to the post-exposure baking device 44 or 45 where the heat treatment is performed.

Then, the wafer W after the heat treatment is
The main transport device 13 sequentially transports the cooling device 43, the development processing device 18 or 20, the post-baking device 35, and the cooling device 30, and performs predetermined processing in each device. Thereafter, the wafer W is returned to the cassette C by the wafer carrier 7 via the extension device 32, and a series of predetermined coating and developing processes is completed.

The operation of the above-described post-posure baking device 44 will be described in detail. Here, the hot plate 65
Is previously set to a heating temperature of the wafer W, for example, 140 ° C. by the heater 66. However, in practice, the pattern of the heater 66 causes unevenness in the temperature distribution as described above, and the temperature at the center of the hot plate 65 is lower than the set temperature, for example, 139 ° C. The temperature at the position corresponding to the periphery of W is 139.5 ° C.

The first heat exchange member 70 and the second
The temperature of the heat exchange member 80 is set to 150 ° C. higher than the set temperature of the hot plate 65 by the temperature controller 73. In addition, the first heat exchange member 70 and the second heat exchange member 80
It waits as low as possible so as not to affect the heat plate 65 thermally.

First, the lid 62 is raised by a drive mechanism (not shown). Then, the wafer W for which the previous process has been completed is carried into the casing 61 by the main transfer device 13, and the wafer W is transferred to the elevating pins 93 which have been waiting at a predetermined position above the hot plate 65 in advance.

Next, the lid 62 is lowered, and the processing chamber S is formed integrally with the hot plate housing 63. At this time,
The supply of the inert gas is started from the outlet 89a of the support ring 89, and the inert gas is exhausted from the exhaust part 62a to generate an airflow. Thereafter, the atmosphere in the processing chamber S is maintained until the heating process is completed. Are purged.

After that, the wafer W is lowered together with the lift pins 93 by the lift drive mechanism 95 and is placed on the hot plate 65. At this time, the first heat exchanging member 70 is raised from the standby position by the first driving mechanism 74 and the second heat exchanging member 80 is moved by the second driving mechanism 84, and the wafer W is heated. It is placed on the plate 65 and contacts the lower surface of the hot plate 65 at the same time. That is, since the heating process of the wafer W is started at the same time when the wafer W is placed on the hot plate 65, the heat exchange members 70 and 80 are brought into contact with the hot plate 65 in synchronization with the start timing of the heating.

Thereafter, the wafer W on the hot plate 65 is
5 is heated by the heat of itself and the heat from the heat exchange members 70 and 80. Then, after a lapse of a predetermined time T1 from the start of heating, first, the second heat exchange member 80 is separated from the hot plate 65 and lowered. Next, after a lapse of a predetermined time T2 from the start of heating, the first heat exchange member 70 is separated from the hot plate 65 and lowered. After a lapse of a predetermined time T3 from the start of heating,
The wafer W is lifted by the lifting pins 93, and the heating of the wafer W ends. The predetermined time T1 and the predetermined time T2 are times such that the total amount of heat applied to the wafer W within the predetermined time T3 from the heating plate 65 or through the heating plate 65 becomes the same within the surface of the wafer W. This is a value previously obtained by an experiment or the like.

The heated wafer W is moved up and down by the elevating pins 93.
To the predetermined position. Then, the lid 62 is raised again, and the processing chamber S is opened. And the wafer W
Is transferred from the elevating pins 93 to the main transport device 13 and is carried out of the casing 61 to complete a series of heating processes.

In the above embodiment, the first heat exchange member 70 and the second heat exchange member 80 are brought into contact with the lower surface of the heat plate 65 for a predetermined time, so that a portion of the heat plate 65 where the temperature is low, that is, Finally, at the center and the periphery, the wafer W
The shortage of heat given to can be supplemented. Therefore, the total amount of heat received by the wafer W within the predetermined time T3, which is the heating time of the wafer W, matches within the surface of the wafer W, and the wafer W is heated without unevenness.

The first heat exchanging member 70 and the second heat exchanging member 80 are brought into contact with the lower surface of the hot plate 65 simultaneously with the start of heating the wafer W. This is, as shown in FIG.
5 (a) in the center of the wafer W mounted on the low temperature portion, and the temperature of the portion mounted on the hot plate heated to another predetermined temperature (FIG. 7). (B))
There is a marked difference at the beginning of heating. That is,
The amount of heat applied at the beginning of heating differs between the two. Therefore, by replenishing the insufficient amount of heat to the central portion of the wafer W at the beginning of heating,
It is possible to efficiently and easily match the total amount of heat applied to the surface of the wafer W.

From the viewpoint of replenishing the amount of heat given at the beginning of heating, the first heat exchanging member 70 and the second heat exchanging member 80 are brought into contact with the lower surface of the hot plate 65 before the start of heating, so that the heat The temperature of the plate 65 may be raised so that a shortage of heat does not occur.

Although the temperatures of the first heat exchange member 70 and the second heat exchange member 80 are set to the same 150 ° C., the temperature differs depending on the difference between the temperature of the hot plate 65 and the predetermined temperature 140 ° C. May be set. However, when the temperature changes, the predetermined time T1 and the predetermined time T2 also differ. Therefore, these values are set in advance by, for example, an experiment or the like so that the predetermined time such that the total amount of heat given in the wafer W surface coincides. Need to ask.

In the above embodiment, the first heat exchange member 70 is provided near the center of the hot plate 65, and the second heat exchange member 80 is provided at a position corresponding to the peripheral portion of the wafer W. This is because the temperature in the vicinity of the center and the peripheral portion of the hot plate 65 is lower than that in other portions due to the pattern arrangement of the heater 66, and the position of the heat exchange member may be appropriately changed according to the pattern of the heater 66. Further, depending on the pattern of the heater 66, only one heat exchange member may be used.
It may be more than one.

Although the Peltier elements 71 and 81 are used as the electronic cooling / heating elements as heat sources of the heat exchange members 70 and 80, a pipe is provided in another heat source, for example, a heat exchange member, and the temperature is controlled in the pipe. A mechanism for flowing a possible fluid may be used. Further, a heating element that generates heat by supplying power to the heat exchange members 70 and 80, for example, a heater may be provided.

Further, in the above embodiment, the first heat exchange member 70 and the second heat exchange member 80 are used as heating members, but they may be used as heating / cooling members. That is, in the above-described embodiment, a predetermined amount of heat is applied to the portion where the temperature of the hot plate 65 is lower than that of the other portions by the heat exchange member. A predetermined amount of heat may be absorbed.

For example, depending on the pattern of the heater 66,
The temperature at the center of the hot plate 65 is a predetermined heating temperature of the wafer W,
For example, when the temperature is higher than 140 ° C., the temperature of the first heat exchange member 70 is set to a temperature lower than a predetermined heating temperature, for example, 1
Set to 39 ° C. Then, similarly to the above-described embodiment, the first heat exchange member 70 is brought into contact with the lower surface of the hot plate 65 at a predetermined timing to cool the central portion of the hot plate 65. Thus, a predetermined amount of heat can be absorbed from the center of the hot plate 65, and the total amount of heat applied to the wafer W by heating can be matched in the plane of the wafer W. When a plurality of heat exchange members are provided, heating and cooling may be individually selected according to the temperature distribution of the hot plate 65.

When a Peltier element is used as the heat source of the heat exchange member, the set temperature of the heat exchange member is set to about 20 ° C.
Can be varied up to 150 ° C. Therefore, the wafer W
When changing the recipe etc. of the hot plate, it is necessary to temporarily lower the temperature of the hot plate. In such a case, the heat exchanging member is set to a low temperature, for example, 20 ° C., and the hot plate is brought into contact with the hot plate. It is also possible to promote the cooling of the steel.

Although the above embodiment has been embodied as a heat treatment apparatus for performing post-exposure baking, it is needless to say that another heat treatment apparatus such as a pre-bake apparatus may be used. Further, although the substrate is a wafer, it is of course applicable to other substrates, for example, a heat treatment apparatus for LCD substrates.

[0065]

According to the first to eleventh aspects, the heat exchanging member can be brought into contact with the hot plate to correct the excess or deficiency of heat in the hot plate surface. Can be matched in the substrate plane. As a result, the substrate is uniformly heated and line width defects are suppressed, thereby improving the yield.

In particular, according to the second aspect, since the heat exchange member can be set to a predetermined temperature, the excess or deficiency of the amount of heat generated by the temperature difference on the hot plate can be corrected according to the temperature difference. Therefore, it is possible to quickly cope with a substrate or a hot plate having a different recipe, thereby improving the throughput.

According to the fourth aspect, the heat exchanging member can be moved up and down freely, and can be moved into and out of contact with the hot plate.
It can come in contact with the hot plate at a predetermined timing and be separated from the hot plate at a predetermined timing. Therefore, it is possible to apply heat to or remove heat from the hot plate at the most effective time, and to provide or remove the most effective amount of heat to the hot plate.

By providing a plurality of heat exchange members, it is possible to correct the excess or deficient heat amount for each finer portion on the hot plate. Therefore, the total amount of heat finally applied to the substrate becomes more uniform, and as a result, the line width of the circuit pattern finally formed on the substrate becomes more uniform, thereby improving the yield.

According to the twelfth to fifteenth aspects, the heat exchange member can be brought into contact with the hot plate to correct the excess or deficiency of the heat in the hot plate surface. The total amount of heat to be obtained can be matched in the substrate plane. Therefore, the substrate is heated uniformly, and as a result,
Since the line width of the circuit pattern finally formed on the substrate becomes uniform, the yield is improved.

In particular, by setting the timing of bringing the heat exchange member into contact with the hot plate at the same time as or before the start of the heating of the substrate, the amount of heat applied to the substrate is significantly excessive or insufficient. The excess or deficiency can be corrected in the early stage of heating. Therefore, the correction can be performed efficiently and easily.

[Brief description of the drawings]

FIG. 1 is an explanatory plan view schematically showing the configuration of a coating and developing system having a post-exposure baking apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing system of FIG.

FIG. 3 is a rear view of the coating and developing system of FIG. 1;

FIG. 4 is an explanatory view of a vertical section of the post-exposure baking apparatus according to the present embodiment.

FIG. 5 is an explanatory diagram showing a heater pattern of a hot plate used in the post-exposure baking apparatus.

FIG. 6 is an explanatory diagram of a cross section of the post-exposure baking apparatus according to the present embodiment.

FIG. 7 is a graph showing a change in the temperature of the wafer from the start of heating the wafer.

[Explanation of symbols]

 Reference Signs List 1 coating / developing processing system 44 post exposure baking device 65 hot plate 66 heater 70 first heat exchange member 71, 81 Peltier element 73 temperature control device 74 first drive mechanism 80 second heat exchange member 84 second drive mechanism W Wafer S Processing chamber

Claims (15)

[Claims] 1. A heat treatment apparatus having a hot plate for mounting a substrate thereon and heating the substrate, wherein the heat treatment device is in contact with a part of the hot plate and heats at least a part of the hot plate. A heat treatment apparatus for a substrate, comprising: a heat exchange member for transferring a substrate. 2. The apparatus according to claim 1, wherein the heat exchange member is configured to be able to set a predetermined temperature. 3. The substrate heating process according to claim 1, wherein a part of the hot plate is a central portion of the hot plate corresponding to a central portion of the substrate. apparatus. 4. The heat exchange member is configured to be movable up and down, and the heat exchange member is capable of coming into contact with and detaching from the hot plate. The substrate heat treatment apparatus according to any one of the above. 5. The substrate heat treatment apparatus according to claim 1, comprising a plurality of said heat exchange members. 6. The substrate heating apparatus according to claim 5, wherein each of the plurality of heat exchange members can be individually set to a predetermined temperature. 7. The heat exchange member according to claim 5, wherein the plurality of heat exchange members are individually movable up and down so as to be able to contact and detach from the hot plate. Substrate heat treatment equipment. 8. One of the plurality of heat exchange members contacts a central portion of the hot plate corresponding to a central portion of the substrate, and transfers heat at least with the central portion of the hot plate. The substrate heat treatment apparatus according to claim 5, wherein the apparatus is a heat exchange member. 9. The substrate heat treatment apparatus according to claim 1, wherein the heat exchange member is a heating member. 10. The heat exchange member according to claim 1, wherein said heat exchange member is a heating / cooling member.
9. The heat treatment apparatus for a substrate according to any one of 6, 7, and 8. 11. The apparatus according to claim 9, wherein the heat exchange member has an electronic cooling element. 12. A heat treatment method for heating a substrate with a hot plate heated to a predetermined temperature, wherein the heat exchange member for transferring heat to at least a part of the hot plate is provided on the hot plate. And a step of detaching the heat exchanging member from the hot plate. 13. The heating of a substrate according to claim 12, wherein the step of bringing the heat exchange member into contact with the hot plate is performed simultaneously with the start of heating of the substrate on the hot plate. Processing method. 14. The heating of a substrate according to claim 12, wherein the step of bringing the heat exchange member into contact with the hot plate is performed before heating of the substrate on the hot plate is started. Processing method. 15. The heating of a substrate according to claim 12, wherein the step of contacting the heat exchange member with the hot plate heats the hot plate. Processing method.