JP2001274064A - Heating treater and heating treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heating treater of a structure that also in the case where the temperature of a hotplate is changed, a cover body rapidly returns to a regular state. SOLUTION: Arms 72 and 73 capable of freely holding a cover body 70 are respectively arranged on the outer peripheries of both ends of this cover body 70. The arms 72 and 73 are vertically movable by cylinders 76 and 77, and each of the arms is movable in the outer direction. Solenoids 92 are respectively provided on holding parts 72a and 73a, which directly hold the cover body 70, of the arms 72 and 73 and can freely adsorb the cover body 70. At the time of a change in a heating temperature, the arms 72 and 73 are separated from the cover body 70. As a result, the time when the arms 72 and 73 having a heat capacity are coming into contact with the cover body 70 is shortened and the time to take until the cover body 70 returns to a regular state is shortened.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus and a method for heating a substrate.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of semiconductor devices, a heat treatment (pre-baking) after applying a resist solution on the surface of a semiconductor wafer (hereinafter, "wafer") and a pattern exposure are performed. Various heat treatments, such as a subsequent heat treatment (post-exposure baking), are performed.

[0003] These heat treatments are usually performed by a heat treatment device. The heat treatment apparatus includes a disk-shaped hot plate for mounting and heating a wafer in a processing container, and a substantially cylindrical lid having a closed upper surface for forming a processing chamber so as to cover the upper surface of the hot plate. And have a body. The lid is fixed to two arms provided in parallel with the outer peripheral wall, and the lid is configured to be able to move up and down by moving the arm up and down. Then, in the processing chamber formed by the lowering of the lid, the wafer is placed on a hot plate set at a predetermined temperature and heated. In addition, the arm also serves to press the lid so that the lid is not displaced during heating and the airtightness of the processing chamber is not impaired.

[0004]

When the heating temperature of the wafer is changed according to the recipe, the set temperature of the hot plate is changed. At this time, the lid forming the processing chamber is Since the arm is fixed and in contact with the arm having a large heat capacity, it takes a longer time for the temperature to reach a steady state than that of the hot plate.

[0005] Since the heat treatment of the wafer is affected not only by the temperature of the hot plate but also by the temperature of the lid, the heat treatment of the wafer becomes unstable unless the temperature of the lid is in a steady state. Variations occur in wafer quality.

Further, if the heat treatment is performed after waiting until the lid becomes steady, extra time is required and the throughput is reduced.

[0007] The present invention has been made in view of the above points, and a heat treatment apparatus and a heat treatment apparatus in which a lid quickly enters a steady state even when the temperature of a hot plate is changed due to a change in a recipe or the like. It is an object of the present invention to provide a heat treatment method using a heat treatment device.

[0008]

According to the first aspect of the present invention, a hot plate for mounting and heating a substrate, a lid for forming a processing chamber covering at least the upper surface of the hot plate, And a holding member for moving the lid at least in the vertical direction, wherein a holding portion of the holding member for directly holding the lid is configured to be detachable from the lid. A substrate heat treatment apparatus is provided.

As described above, by making the holding member detachable from the lid, the holding member can be detached from the lid except when the lid is held and moved. Therefore, it is possible to reduce the total heat capacity of the lid including the one in contact with the lid. Therefore, for example, if the holding member is detached when increasing the temperature of the hot plate,
Since the temperature of the lid body rises faster and becomes in a steady state, the heat treatment of the substrate can be started at an earlier stage. Further, even when the heating process is started when the hot plate is in the steady state without waiting for the lid to be in the steady state, the holding member is detached from the lid except when the cover is moved. By doing so, it is possible to reduce the time required for the lid to completely reach a steady state. As a result, for example, after the recipe is changed, the difference in the heat treatment environment between the substrate to be processed first and the substrate to be processed later is reduced, and the predetermined heat treatment without variation between the substrates is performed. The detachable means that the holding portion comes into contact with the lid and can be detached.

[0010] In the invention of claim 1, claim 2
As described above, the holding member may hold both ends of the outer peripheral wall of the lid, and may be configured to move at least horizontally and outward with respect to the lid and separate therefrom.
In this way, the contact time between the holding member and the lid can be reduced in the same manner as in claim 1 by allowing the two holding members to move outward with respect to the lid and being able to be separated from the lid. Therefore, the time required for the temperature of the lid to reach a steady state is reduced, and a faster and more uniform heat treatment between substrates is realized. An example of the suction means is a suction pump.

[0011] The heat treatment apparatus of claim 1 or 2 is
According to a third aspect of the present invention, a solenoid for adsorbing the holding member and the lid may be provided, or a suction means may be provided as in the fourth aspect. As described above, by providing the solenoid or the suction means, it is possible to suitably carry out the holding member holding the lid and releasing the lid as needed.

Further, as in claim 5, the holding portion has a convex portion protruding toward the lid, and the lid has a concave portion fitted to the convex portion. May be attached and detached to realize the holding and detaching of the holding member. Further, as in claim 6, contrary to claim 5, a projection may be provided on the lid and a recess may be provided in the holding portion.

In each of the above heat treatment apparatuses,
As described above, at least the holding portion of the holding member may be made of a heat insulating material. As described above, when the heat insulating material is used for the holding member, it is possible to prevent the holding member from losing heat when the lid is held by the holding member. Therefore, when the temperature of the hot plate is changed as described above,
The time required for the temperature of the lid to reach a steady state is reduced, and the temperature of the lid is maintained thereafter, so that the heating process is started earlier and the heating process with more uniformity is performed. Since it is sufficient that at least the holding portion is a heat insulating material, the entire holding member may be made of a heat insulating material.

In the above heat treatment apparatus, a horizontal portion is provided outside the outer periphery of the hot plate so as to come into contact with the lower surface of the lid when forming a processing chamber. May be provided. When the contact maintaining means is provided in this way, the lid can be reliably brought into contact with the horizontal portion, and the environment of the processing chamber maintained at a predetermined temperature and a predetermined atmosphere is suitably maintained.

The contact maintaining means of claim 8 may use a solenoid as in claim 9 or may use a suction means as in claim 10. Since these means need only be a relatively simple device, the complexity of the entire heat treatment apparatus is suppressed.

Further, in each of the above heat treatment apparatuses,
According to a twelfth aspect of the present invention, there may be provided a temperature adjusting means for adjusting the temperature of the holding member to a predetermined temperature. By providing a means for positively adjusting the temperature of the holding member to a predetermined temperature, for example, when the temperature of the hot plate is changed to the predetermined temperature, the temperature of the holding member is set to an appropriate temperature, that is, the predetermined temperature of the hot plate. The temperature can be adjusted to a temperature at which the lid corresponding to the temperature becomes a steady state. Therefore, not only is it possible to prevent heat from escaping from the lid to the holding member, but also to actively apply heat to the lid and quickly bring the lid to a steady temperature. As a result, the heat treatment is started earlier, and a heat treatment with less variation between substrates is realized.

According to a twelfth aspect of the present invention, there is provided a hot plate on which a substrate is placed and heated, a lid which covers at least the upper surface of the hot plate to form a processing chamber, and which holds the lid, and which is provided with at least the lid. There is provided a heat treatment apparatus for a substrate, comprising: a holding member for moving the holding member in a vertical direction; and a temperature adjusting means for adjusting a temperature of the holding member to a predetermined temperature.

By providing the temperature adjusting means for adjusting the temperature of the holding member to a predetermined temperature, the temperature of the holding member can be reduced.
Since the holding member can be brought to an appropriate temperature in advance as before, the heat exchange between the cover and the holding member is actively performed before the temperature of the cover reaches a steady state, and the cover is After the steady state, the transfer of heat is prevented. Accordingly, the heat treatment can be started earlier, and the heat treatment can be performed with less unevenness. In addition, temperature control means
Other than those described below, for example, a heating element that generates heat by a power supply and a heat exchanger that uses a fluid are also included.

The temperature control means according to the eleventh or twelfth aspect may be an electronic cooling element as in the thirteenth aspect. As described above, since the holding member can be heated and cooled by using the electronic cooling element, when the temperature of the hot plate is to be increased, the holding member is heated in advance to a high temperature, and the temperature of the hot plate is reduced. In this case, the holding member can be cooled in order to lower the temperature in advance. As a result, the temperature of the lid body can be quickly brought into a steady state in response to the case where the temperature of the hot plate is raised and the case where the temperature of the hot plate is cooled. As the electronic cooling / heating element, for example, a Peltier element is adopted.

According to the fourteenth aspect, a step of mounting the substrate on the hot plate, a step of forming a processing chamber in which the lid held by the holding member covers the hot plate, and a step of heating the substrate A heat treatment method having a step of detaching the holding member from the lid, wherein the step of detaching the holding member from the lid is performed at least when changing the temperature of the hot plate. A method for heat treating a substrate is provided.

According to the fourteenth aspect, the temperature of the hot plate is changed to a predetermined temperature, and the holding member is detached from the lid when the temperature of the hot plate changes to the predetermined temperature. By doing so, the lid is separated from the holding member having a large heat capacity, so that the temperature of the lid is brought to a steady state earlier. Therefore, the heat treatment can be started earlier. Note that changing the hot plate temperature refers to a period from the end of the substrate heating process before the hot plate temperature change to the start of the substrate heating process after the hot plate temperature change.

According to the fifteenth aspect of the present invention, the step of mounting the substrate on the hot plate, the step of forming a processing chamber with the lid held by the holding member covering the hot plate, and the step of heating the substrate Wherein the holding member is detached from the lid during the step of heating the substrate.

According to the fifteenth aspect, during the step of heating the substrate, the holding member is separated from the lid, so that, for example, the temperature of the hot plate is changed and the lid is still in a steady state. If the heat treatment of the substrate is started when the heat treatment is not performed, the total heat capacity of the lid decreases, so that the lid can be brought into a steady state sooner. In addition, even in a normal heating process after the steady state is reached, heat is prevented from escaping from the lid to the holding member, and for example, power consumption for maintaining the hot plate temperature is reduced.

According to the sixteenth aspect, a step of mounting the substrate on the hot plate, a step of forming a processing chamber by covering the hot plate with the lid held by the holding member, and a step of heating the substrate And a step of adjusting a temperature of the holding member to a predetermined temperature.

According to the sixteenth aspect, for example, the hot plate is set at a predetermined temperature, and the temperature of the holding member can be adjusted in advance to a steady temperature of the lid corresponding to the predetermined temperature of the hot plate. . As a result, the temperature of the lid is maintained in a steady state, and the substrate can be heated in a constant environment.

In the invention of claim 16, the step of adjusting the temperature of the holding member as in claim 17 may be performed when the temperature of the hot plate is changed.
As described above, by performing the step of adjusting the temperature of the holding member when changing the temperature of the hot plate, for example, when the holding member is set to the final steady temperature of the lid, the temperature of the holding member holding the lid is changed. The heat allows the lid to reach the steady temperature faster. Therefore, the heat treatment can be started earlier. Note that changing the hot plate temperature refers to a period from the end of the substrate heating process before the hot plate temperature change to the start of the substrate heating process after the hot plate temperature change.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view of a coating and developing processing system 1 having a heat treatment apparatus according to the present embodiment, FIG. 2 is a front view of the coating and developing processing system 1, and FIG. FIG.

As shown in FIG. 1, for example, the coating and developing system 1 carries 25 wafers W into and out of the coating and developing system 1 from the outside in units of cassettes and carries wafers W into and out of the cassette C. A cassette station 2 for unloading, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-sheet type in a coating and developing processing step are arranged in multiple stages, and provided adjacent to the processing station 3. An interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown) is integrally connected.

In the cassette station 2, a plurality of cassettes C can be mounted in a row in the X direction (up and down direction in FIG. 1) at predetermined positions on a cassette mounting table 5 serving as a mounting portion. Then, the cassette arrangement direction (X direction) and the wafer arrangement direction (Z
(A vertical direction) is provided movably along a transfer path 8 so that each cassette C can be selectively accessed.

The wafer carrier 7 has an alignment function for positioning the wafer W. The wafer carrier 7 is configured so as to be able to access the extension devices 32 belonging to the third processing device group G3 on the processing station 3 side as described later.

In the processing station 3, a main transfer unit 13 is provided at the center thereof, and various processing units are arranged in multiple stages around the main transfer unit 13 to form a processing unit group. In the coating and developing system 1,
Four processing unit groups G1, G2, G3, and G4 are disposed. The first and second processing unit groups G1 and G2 are disposed on the front side of the development processing system 1, and the third processing unit group G3 is disposed.
Is located adjacent to the cassette station 2 and the fourth
The processing unit group G4 is disposed adjacent to the interface unit 4. Further, a fifth processing unit group G5 indicated by a broken line as an option can be separately arranged on the back side. The main transfer device 13 is provided with these processing device groups G1.
Wafers W can be loaded and unloaded to and from various processing apparatuses described below arranged at G5.

In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 for coating a resist solution on the wafer W, and a developing unit 18 for supplying a developing solution to the wafer W for processing. Are arranged in two stages from the bottom. Similarly, in the case of the second processing unit group G2, similarly, the resist coating unit 19 and the developing unit 20 are stacked in two stages from the bottom.

In the third processing unit group G3, for example, as shown in FIG.
0, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, an extension device 32 for holding the wafer W on standby, pre-baking devices 33 and 34 for drying the solvent in the resist solution, and a heating process after the development process. Post-baking devices 35 and 36 to be applied are stacked in, for example, seven stages from the bottom.

In the fourth processing apparatus group G4, for example, a cooling apparatus 40, an extension cooling apparatus 41 for naturally cooling the mounted wafer W, an extension apparatus 42, and heating / cooling as a heat processing apparatus according to the present embodiment. Devices 43, 44, 45 (PEB / C in FIG. 3)
OL), post-baking devices 46, 47, etc. are stacked in, for example, eight stages from the bottom.

A wafer carrier 50 is provided at the center of the interface section 4. The wafer transfer body 50 is configured to freely move in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction), and rotate in the θ direction (rotation direction about the Z axis). , Fourth processing unit group G4
, An extension cooling device 41, an extension device 42, a peripheral exposure device 51, and an unshown exposure device.

The present embodiment in which the heat treatment apparatus of the present invention is embodied in the above-described heating / cooling apparatus 44 will be described. The heating / cooling device 44 is a device capable of performing a heating process and a cooling process on the wafer W in a single device, and is useful for heating the wafer W and immediately cooling it.

Hereinafter, the structure of the heating / cooling device 44 will be described. As shown in FIGS. 4 and 5, a thick plate-like base 60 is provided in a casing 44a of the heating / cooling device 44. The base 60 has a heating unit 60a for heating the wafer W and a cooling unit 60b for cooling the wafer W.

The heating section 60a of the base 60 has
As shown in FIG. 7, a lid 70 that covers the hot plate 67 and forms a processing chamber S integrally with a support ring 90 described later is provided. The lid 70 is formed in a substantially cylindrical shape whose lower surface is open. In addition, in the upper part inside the lid 70, FIG.
The exhaust plate 7 covers the surface of the lid 70 on the wafer W side as shown in FIG.
0a is provided, and an exhaust hole 70b for exhausting the atmosphere in the processing chamber S is provided at the center of the exhaust plate 70a. Further, an exhaust chamber 70c is formed between the exhaust plate 70a and the upper surface of the lid 70, and an exhaust hole 7c is formed.
Exhaust gas 70a provided on the side of the lid 70
d.

At both ends of the outer peripheral wall of the lid 70, FIG.
Are provided with two arms 72, 73 as holding members extending along the longitudinal direction (X direction in FIG. 5) of the base 60, and the lid 7 of the two arms 72, 73 is provided.
Solenoids 74 are respectively attached to the holding portions 72a and 73a that are in contact with 0. Therefore, the arms 72, 73
By the solenoid 74, both ends of the outer peripheral surface of the lid 70 can be sucked and held. Further, the timing of suction by the solenoid 74 is controlled by the control device 75. The holding portions 72 of these arms 72, 73
A and 73a are made of a heat insulating material, for example, a polyimide resin so as not to release the heat of the lid 70.

Below the two arms 72, 73, cylinders 76, 77 for moving the arms 72, 73 up and down, respectively, are provided. further,
As shown in FIG. 5, the arms 72 and 73 have a motor or the like that can move outward from the lid 70, that is, the arm 72 can move in the negative Y direction of FIG. 5, and the arm 73 can move in the positive Y direction of FIG. A moving mechanism 78 is provided on the lower surface of the base 60. The driving of the moving mechanism 78 and the cylinders 76 and 77 is controlled by the control device 75 described above. Therefore, the arms 72 and 73 are connected to the lid 7 as described above.
It is possible to adsorb and hold 0, move the lid 70 in the vertical direction, and open it outward to separate from the lid 70.

Further, below the heating section 60a of the base 60,
As shown in FIG. 4, a hot plate housing section 80 for housing the hot plate 67 is provided.

In the hot plate accommodating portion 80, a disk-shaped hot plate 67 for mounting and heating the wafer W at the center is provided.
The hot plate 67 has a heater 82 as a heat source.
The heaters 82 are arranged in a predetermined pattern, for example, concentrically, and are controlled by a temperature control device 85 so that the heating plate 67 has a predetermined temperature.

The hot plate 67 is supported by an annular support member 86 having a step inside on the inside, which is excellent in heat insulation. The lower surface of the support member 86 is further supported by a support base 87.

The hot plate accommodating portion 80 surrounds the support member 86 and the support base 87, and is integrated with the lid 70 to form the processing chamber S.
Has a substantially cylindrical support ring 90 that forms
As shown in FIGS. 5 and 7, a solenoid 92 as a contact maintaining means for maintaining a contact state with the lower surface of the lid 70 is provided on an upper surface 90a as a horizontal portion of the support ring 90.
Are attached. The solenoid 92 is turned on / off by the control device 75 described above.
F is being controlled. Further, an O-ring 93 is provided inside the solenoid 92 on the upper surface 90a, so that the atmosphere inside and outside the processing chamber S can be shut off when the processing chamber S is formed. Further, a portion of the upper surface 90a inside the portion in contact with the lid 70 is provided with, for example, a blowing port 90b for blowing an inert gas into the processing chamber S.
Is provided, and the inside of the processing chamber S can be purged.

Further, a plurality of elevating pins 95 for supporting and elevating the wafer W when loading / unloading the wafer W are provided in the hot plate accommodating section 80. This lifting pin 9
5 is movable up and down by a lifting drive mechanism 96,
It is configured to be able to move up and down in a hole 97 penetrating through the hot plate 67 and protrude above the hot plate 67.

On the other hand, a slit 102 is provided in the cooling section 60b of the base 60 along the X direction.
A cooling plate 100 is provided that moves along the moving rail 99 in the inside 02 and is also movable in the vertical direction.

As shown in FIGS. 4 and 5, the cooling plate 100 has a substantially rectangular flat plate shape as a whole, and has a predetermined inside supplied from a constant temperature water supply source 101 installed outside. A liquid at a temperature, for example, constant temperature water circulates in the circulation path 100a in the cooling plate 100, and cools the wafer W mounted on the cooling plate 100. Further, slits 103 and 104 are formed at an end of the cooling plate 100 on the side of the heating unit 60a. When the cooling plate 100 moves to the heating unit 60a side, the slits 103 and 104
In order to receive the wafer W supported by the elevating pins 95 above, as shown in FIG. 8, the elevating pins 95 are provided so as not to be an obstacle when positioned on the hot plate 67. Therefore, the cooling plate 100 is movable on the hot plate 67 and the wafer W
Can be freely received.

Next, the heating / heating device configured as described above is used.
Regarding the operation of the cooling device 44, the coating and developing system 1
And the process of the photolithography step performed in the above.

First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C, and the third processing unit group G3
Is carried into the adhesion device 31 belonging to In this adhesion apparatus 31, the wafer W coated with an adhesion enhancer such as HMDS for improving the adhesion with the resist solution is applied.
Is transported by the main transport unit 13 to the cooling device 30 and cooled to a predetermined temperature. After that, the wafer W is
Resist coating device 17 or 19, pre-baking device 34
Or, they are sequentially conveyed to 35 and subjected to predetermined processing. After that, the wafer W is transferred to the extension cooling device 4.
It is transported to 1.

Next, the wafer W is taken out of the extension cooling device 41 by the wafer transfer body 50, and then transferred to the exposure device (not shown) via the peripheral exposure device 51. The wafer W after the exposure processing is
After being transferred to the extension device 42 by the wafer transfer body 50, it is held by the main transfer device 13. Next, the wafer W is transferred to a heating / cooling device 43, 44 or 45 in which heating and cooling processes after the exposure process are performed.

Then, the wafer W having been subjected to the heating and cooling processes is transferred to the developing device 18 or 2 by the main transfer device 13.
0, the post-baking device 35, and the cooling device 30 in order, and each device is subjected to a predetermined process.
Thereafter, the wafer W is returned to the cassette C by the wafer carrier 7 via the extension device 32, and a series of predetermined coating and developing processes is completed.

The operation of the heating / cooling device 44 for performing the above-mentioned heating and cooling after exposure will be described in detail. For example, the case where the wafer W is heated at 90 ° C. first, but the recipe is changed, and thereafter, the case where the wafer W is heated at 140 ° C. will be described as an example. In this case, it is necessary to first change the temperature of the hot plate 67 from 90 ° C. to 140 ° C. before starting the heat treatment of the wafer W. At this time, the lid 70 is lowered without placing the wafer W on the hot plate 67 to form the processing chamber S. Then, as shown in FIG. 9, the control device 75 releases the suction of the solenoids 74 of the arms 72, 73, and the moving mechanism 78 puts the arms 72, 73 on the lid 70.
From the outside.

Next, based on the set temperature (140 ° C.) set in the temperature control device 85, the heater 82 generates heat,
The temperature of the hot plate 67 is increased. At this time, as the temperature of the hot plate 67 rises, the temperature of the lid 70 also rises, but since the lid 70 has poorer heat conductivity than the normal hot plate 67,
When the temperature in the steady state is more than 7, for example, when the set temperature of the hot plate 67 is 140 ° C., it takes time to reach about 80 ° C.
Therefore, according to the present invention, the arms 72 and 73 having a large heat capacity are detached from the lid 70 as described above, and the
By preventing heat from escaping, the time required for the lid 70 to reach a steady state can be shortened.

Thereafter, the temperature of the hot plate 67 rises to 140
℃, and becomes a steady state. Then, the processing of the wafer W may be started after the lid 70 has been delayed to be in the steady state, but in the present embodiment, the heat plate 67 has been in the steady state in consideration of the throughput. Later, to some extent lid 7
It is assumed that the heating process of the wafer W is started when the temperature of 0 approaches a steady temperature (for example, 80 ° C.).

In this case, since the temperature of the lid 70 has not yet reached the steady temperature, the contact time between the arms 72 and 73 and the lid 70 is reduced so that the steady state is reached as soon as possible. It is necessary to prevent heat from being taken away. Hereinafter, the process of heating and cooling the wafer W in consideration of such points will be described.

First, when the heating process is started, the arm 7
2 and 73 hold the lid 70 by suction, and the cylinders 67 and 77
To raise the lid 70. Next, the wafer W that has been subjected to the previous process, that is, the pattern exposure processing, is carried into the casing 41a by the main transfer device 13, and the wafer W
Is transferred to the elevating pins 95 which have been waiting on the heating plate 67 in the heating section 60a in advance.

Next, the lid 70 is moved by the arms 72 and 73.
Is lowered, the lower surface of the lid 70 contacts the upper surface 90a of the support ring 90, and the lid 70 and the support ring 90 are integrated to form the processing chamber S. At this time, the lid 7
The lower surface of the support ring 90 is
And the airtightness of the processing chamber S is maintained. In addition, the signals from the control device 75 allow the arms 72, 7
3 is released from the suction of the solenoid 74, and each arm 72,
73 opens outward and separates from the lid 70. Then, the supply of the inert gas is started from the outlet 90a of the support ring 90. When the inert gas is exhausted from the exhaust hole 70a through the processing chamber S, an air current is generated,
Thereafter, a constant airflow atmosphere is maintained in the processing chamber S until the heat treatment is completed.

Thereafter, the wafer W is lowered together with the lifting pins 95 by the driving mechanism 96 and is mounted on the hot plate 67. Then, the heating process is started simultaneously with the mounting of the wafer W, and the wafer W is heated at a predetermined temperature for a predetermined time.

After a lapse of a predetermined time, the wafer W is raised to a predetermined position by the lifting pins 95, and the heating by the hot plate 67 is completed. At this time, the lid 70 and the support ring 9
0 is released from the upper surface 90a and the lid 7 is closed.
0 is again sucked and held by the arms 72 and 73 and is raised. Next, in this state, the cooling plate 100 moves onto the hot plate 67 and receives the wafer W. As described above, the constant temperature water is circulating in the cooling plate 100, and the cooling process is started immediately after the wafer W is received on the cooling plate 100.

After that, the cooling plate 100 is
0b, and cools the wafer W for a predetermined time.
The wafer W is transferred to the main transfer device 13 and is transferred to the casing 4.
4a, and a series of heating / cooling processing ends.

The above heating / cooling process is repeated for each wafer W, and a predetermined number of wafers W are processed. When a predetermined number of wafers W have been processed, the recipe is changed again,
The temperature of the hot plate 67 is changed.

In the above embodiment, the arms 72, 73
Is provided so as to be detachable from the lid 70, and when the temperature of the hot plate 67 is changed, heat is released from the lid 70 to the arms 72, 73 so that the arms 72, 73 are detached from the lid 70. Thus, the time required for the lid 70 to reach the steady temperature (80 ° C.) is reduced. Thereby, the wafer W
The heating start time of is faster than before, which leads to an improvement in throughput. In the present embodiment, the case where the temperature of the hot plate 67 is raised from 90 ° C. to 140 ° C. has been described. However, the present invention is similarly applied to the case where the hot plate 67 is cooled to a lower temperature.

In the present embodiment, the cover 7
Since the processing of the wafer W is started when 0 approaches the steady temperature (80 ° C.), it is necessary to bring the lid 70 to the steady state as soon as possible. Therefore, except when the cover 70 is moved, the arms 72 and 73 are detached from the cover 70, and the contact time between the cover 70 and the arms 72 and 73 is reduced even during the processing of the wafer W. .

The heating process of the wafer W may be started after the lid 70 has completely reached the steady state. However, in this case, since the processing environment of the wafer W is already stable, the Each time the body 70 is moved, the arms 72 and 73 do not have to be disengaged or may be disengaged. However, in any case, the temperature required for the lid 70 to reach the steady state is reduced, so that the throughput is improved.

In the present embodiment, the arms 72 and 73
The solenoid 92 is used as a means for adsorbing the
However, a suction means, for example, a suction port communicating with a suction device may be provided in the holding portions 72a, 73a of the arms 72, 73, and the lid 70 may be sucked by the suction force. In the above embodiment, the arm 7
The means for adsorbing the lids 2 and 73 and the lid 70 is attached to the arm side, but may be attached to the lid 70 as a matter of course.

Further, each arm 72, 73 may be provided with a convex portion, and the cover may be provided with a concave portion fitted to the convex portion, so that the arm and the cover may be attracted. For example, FIG.
As shown at 0, a protrusion 110a protruding toward the lid 115 is provided on the arm 110, and a recess 115b fitted to the protrusion 110a is provided on the cover 115. Note that the reverse, that is, the concave portion 115b may be provided on the arm 110 side, and the convex portion 110a may be provided on the lid body 115 side.

In this embodiment, the arms 72, 73
Since the heat insulating material is used for the holding portions 72a and 73a, even when the arms 72 and 73 hold the lid 70,
The heat of the lid 70 is prevented from escaping to the arms 72 and 73, and the time required for the lid 70 to reach a steady temperature is further reduced.

On the other hand, a solenoid 92 is provided on the upper surface 90a of the support ring 90 so that the solenoid 92 can be kept in contact with the lower surface of the lid 70.
Even if 2, 73 are removed from the lid 70, the lid 70
Is prevented from being displaced by the positive pressure of the processing chamber S, and the airtightness of the processing chamber S is maintained.

As means for maintaining the contact state between the support ring 90 and the lid 70, a solenoid 9 is used.
Instead of 2, the support ring 90 may be provided with a suction means, for example, a suction port communicating with a suction device.

In the above embodiment, the contact time between the lid 70 and the arms 72 and 73 is reduced as much as possible,
Although the time required for the lid 70 to reach the steady state was shortened by suppressing the heat from being taken away from 0, the arms 72 and 73 were provided with temperature control means, respectively. Alternatively, predetermined heat may be applied to bring the lid 70 to the steady state earlier.

In this case, as shown in FIG.
Peltier devices 122 and 123, which are electronic cooling and heating devices, are provided at 20 and 121 as temperature control means, and their temperatures are controlled by a controller 125.

Before the heat treatment is started, the temperature of the hot plate 67 is increased from 90 ° C. to 140 ° C. in accordance with the recipe.
When the temperature is changed to ° C, the arms 120 and 121 are
The holding members 120a and 121a of the arms 120 and 121 are held by
May be heated to, for example, 80 ° C. By doing so, the temperature of the lid 130 can reach the steady state temperature of 80 ° C. more quickly.

Further, even after the heating of the wafer W is started, the arms 120 and 121 are connected to the Peltier devices 122 and 122, respectively.
The temperature may be maintained at, for example, 80 ° C. by the control unit 123. In this case, similar to the above-described embodiment, the lid 130
If the heating of the wafer W is started before the temperature has reached the steady-state temperature, the temperature of the lid body 130 is brought to the steady state earlier by the heat of the arms 120 and 121. On the other hand, lid 1
Even when heating the wafer W is started after the temperature of the wafer 30 reaches the steady temperature, the temperature of the lid 130 is reliably maintained, and a change in the temperature of the lid 130 does not adversely affect the processing of the wafer W. Is done.

Although the above embodiment has been embodied as a heat treatment apparatus for performing heat treatment after exposure, other heat treatment apparatuses such as a pre-baking apparatus and a post-baking apparatus may be used. Further, although the substrate is a wafer, the present invention can of course be applied to another substrate, for example, an LCD substrate heating apparatus.

[0075]

According to the first to eleventh, fourteenth, and fifteenth aspects, when the temperature of the hot plate is changed, the time required for the cover covering the hot plate to reach a steady state can be reduced. Accordingly, the time required for preparing the environment for processing the substrate is shortened, and the heat treatment of the substrate can be started earlier, which leads to an improvement in throughput. Also, even if the heating process is started before the processing environment of the substrate is set as in the past,
The cover reaches the temperature steady state sooner, and the processing environment of the substrate is set. Therefore, variation between substrates is reduced, and the yield is improved.

In particular, according to the eighth to tenth aspects, the contact maintaining means is provided on the horizontal portion which is in contact with the lower surface of the lid, so that the position of the lid covering the hot plate is shifted and the atmosphere in the processing chamber becomes unstable. Is prevented. Therefore, the substrate in the processing chamber is appropriately processed, and the yield is improved.

According to the fifteenth aspect, the holding member is detached from the lid even during the normal heat treatment of the substrate, so that heat is prevented from escaping from the lid to the holding member.
For example, the power consumption for maintaining the hot plate temperature is reduced, and the cost is reduced.

According to claims 11 to 13, 16 and 17, since the temperature of the holding member of the lid can be positively adjusted, heat is transferred between the lid and the lid, and the lid is brought into a steady state. It is possible to shorten the time required for the operation. Therefore, claim 1
As in the case of 11, the throughput and the yield are improved.

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing a configuration of a coating and developing processing system in which a heating / cooling device according to an embodiment is incorporated.

FIG. 2 is a front view of the coating and developing system of FIG.

FIG. 3 is a rear view of the coating and developing system of FIG. 1;

FIG. 4 is an explanatory view of a longitudinal section of the heating / cooling device according to the present embodiment.

FIG. 5 is an explanatory plan view schematically showing the configuration of the heating / cooling device shown in FIG. 4;

FIG. 6 is a perspective view schematically showing the inside of a heating / cooling device.

FIG. 7 is an explanatory view of the vicinity of the upper surface of the support ring of the heating / cooling device as viewed from the side.

FIG. 8 is an explanatory plan view of the heating / cooling device showing a state in which the cooling plate has moved to the heating unit side.

FIG. 9 is a perspective view of the inside of the heating / cooling device showing a state where the arm is detached from the lid.

FIG. 10 is an explanatory view showing another embodiment of the means for attracting the arm and the lid.

FIG. 11 is an explanatory plan view showing a heating unit when a Peltier element is provided on an arm.

[Explanation of symbols]

 Reference Signs List 1 coating and developing system 44 heating / cooling device 67 hot plate 70 lid 72, 73 arm 72a, 73b holding portion 74 solenoid 75 control device 76, 77 cylinder 90 support ring 100 cooling plate

Claims (17)

[Claims] 1. A heating plate on which a substrate is placed and heated, a lid that covers at least the upper surface of the heating plate to form a processing chamber, and the lid is held, and the lid is moved at least in a vertical direction. A holding member for directly holding the lid of the holding member, the holding unit being configured to be detachable from the lid. . 2. The apparatus according to claim 1, wherein the holding member is configured to hold both ends of an outer peripheral wall of the lid, and is movable at least horizontally and outward with respect to the lid to be detachable. The substrate heat treatment apparatus according to claim 1, wherein: 3. The substrate heat treatment apparatus according to claim 1, wherein the holding section or the lid has a solenoid for adsorbing the holding member and the lid. 4. The substrate heating apparatus according to claim 1, wherein said holding portion or said lid has suction means for sucking said holding member and said lid. 5. The holding device according to claim 1, wherein the holding portion has a convex portion protruding toward the lid, and the lid has a concave portion fitted to the convex portion. A heat treatment apparatus for a substrate as described in the above. 6. The lid according to claim 1, wherein the lid has a projection protruding toward the holding section, and the holding section has a recess fitted to the projection. A substrate heat treatment apparatus according to claim 1. 7. The holding member according to claim 1, wherein at least a holding portion of the holding member is made of a heat insulating material.
7. The substrate heat treatment apparatus according to any one of 4, 5, and 6. 8. A contact maintaining means which has a horizontal portion outside the outer periphery of the hot plate and which comes into contact with the lower surface of the lid when forming a processing chamber, and maintains the contact state. The substrate heat treatment apparatus according to any one of claims 1, 2, 3, 4, 5, 6, and 7. 9. The apparatus according to claim 8, wherein the contact maintaining means is a solenoid. 10. The apparatus according to claim 8, wherein the contact maintaining unit is a suction unit. 11. The apparatus according to claim 1, further comprising a temperature adjusting means for adjusting a temperature of said holding member to a predetermined temperature. A heat treatment apparatus for a substrate according to any one of the above. 12. A hot plate for placing and heating a substrate, a lid for forming a processing chamber covering at least an upper surface of the hot plate,
A heat treatment device having a holding member that holds the lid and moves the lid at least in the up-down direction, comprising a temperature adjusting unit that adjusts the temperature of the holding member to a predetermined temperature. Substrate heat treatment equipment. 13. The apparatus according to claim 11, wherein the temperature adjusting means is an electronic cooling / heating element. 14. A heat treatment comprising the steps of: mounting a substrate on a hot plate; forming a processing chamber by covering a hot plate with a lid held by a holding member; and heating the substrate. The method, comprising the step of detaching the holding member from the lid, wherein the step of detaching the holding member from the lid comprises:
A heat treatment method for a substrate, which is performed when the temperature of the hot plate is changed. 15. A heat treatment comprising the steps of: placing a substrate on a hot plate; forming a processing chamber by covering a hot plate with a lid held by a holding member; and heating the substrate. At least during the step of heating said substrate,
A method for heat treating a substrate, wherein the holding member is detached from the lid. 16. A heat treatment method comprising the steps of: placing a substrate on a hot plate; forming a processing chamber by covering a hot plate with a lid held by a holding member; and heating the substrate. And a step of adjusting the temperature of the holding member to a predetermined temperature. 17. The method according to claim 16, wherein the step of adjusting the temperature of the holding member is performed when changing the temperature of the hot plate.