JP3519664B2 - Heat treatment equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a substrate heat treatment apparatus.

[0002]

2. Description of the Related Art In a photoresist processing step in the manufacture of semiconductor devices, heat treatment (prebaking) after applying a resist solution to the surface of a semiconductor wafer (hereinafter referred to as "wafer") and pattern exposure are performed. Various heat treatments such as the subsequent heat treatment (post exposure baking) are performed.

These heat treatments are usually performed by a heat treatment device. In this heat treatment apparatus, as shown in FIG. 18, a disk-shaped heat plate 150 for placing and heating a wafer W in a treatment container, and a lid for covering the upper surface of the heat plate 150 and forming a treatment chamber S are formed. The body 151 is provided and the wafer W
Is placed on the heating plate 150 in the processing chamber S and heated at a predetermined temperature. Further, a plurality of supply ports 152 for supplying gas into the processing chamber S are provided outside the heating plate 150, while the lid 151 has a central portion for exhausting the gas in the processing chamber S. An exhaust port 153 is provided.
With such a configuration, it is possible to generate an ascending airflow in the processing chamber S during the heat treatment and eliminate particles generated in the processing chamber S.

[0004]

However, according to the structure of the heat treatment apparatus, when the gas is ejected from the supply port 152 outside the heat plate 150 as shown by the arrow in FIG. The lid 151 goes almost straight to the center of the lid 151 and is exhausted from the exhaust port 153. Then,
The gas flow in the processing chamber is biased, and there is a place where no gas flows near the center of the wafer W. As a result, heat mist M having a temperature higher than that of other portions may be generated at that place.

When the heat mist M is generated,
The temperature of the wafer W is also affected, and the central portion of the wafer W becomes a singular point with a high temperature, and the wafer W is not heated uniformly in the plane. Then, the uniformity of the line width in the plane of the wafer W is deteriorated.

The present invention has been made in view of the above point, and heat treatment of a substrate is performed so that the air flow in the processing chamber is controlled to be uniform and the heating temperature in the surface of the substrate such as a wafer is made uniform. The purpose is to provide a device.

[0007]

According to a first aspect of the present invention, there is provided a hot plate on which a substrate is placed and heated, and a lid which covers the hot plate and forms at least a part of a processing chamber. In a heat treatment apparatus, an exhaust port for exhausting gas in the processing chamber is provided at a position of the body facing the upper surface of the substrate, wherein a substrate of the lid body is provided between the exhaust port and the hot plate. Heating the substrate, characterized in that it has a flow dividing plate covering the side surface, and the flow dividing plate has a plurality of dispersed ventilation holes in a portion excluding a portion facing the exhaust port. A processing device is provided.

As described above, when the flow dividing plate having a plurality of ventilation holes is provided in the portion other than the portion facing the exhaust port, the airflow generated in the processing chamber is first discharged from the exhaust port. Pass through each vent above. Further, since the air holes are formed in a portion excluding the portion facing the exhaust port, the air flow passes through the air holes evenly without being biased, so that the air flows are dispersed in the processing chamber, The atmosphere in all areas is exhausted uniformly. Therefore, it is possible to prevent heat from being accumulated in a part of the substrate as in the conventional case, and it is possible to maintain a uniform heating temperature in the surface of the substrate. The shape of the vent hole itself may be circular, rectangular or any other shape.

In the invention of claim 1, the exhaust port may be provided at a position facing the central portion of the upper surface of the substrate as in claim 2. In this way, if the exhaust port is provided in the center, the atmosphere in the processing chamber is exhausted more uniformly and efficiently from the vicinity of the center of the lid.

Further, the vent holes in claim 1 or 2 may be arranged radially as in claim 3, or may be arranged concentrically as in claim 4. in this way,
By arranging a plurality of ventilation holes in each pattern to form a more uniform air flow, the atmosphere in the processing chamber is exhausted more uniformly, so that the uniformity of the heating temperature within the substrate surface is improved.

Further, the shape of the vent hole itself of claim 3 may be a slit shape as in claim 5, or the shape of the vent hole itself of claim 4 may be arcuate as in claim 6. You may In this way, by adopting the shape in which the air flow having the most non-uniformity corresponding to the shape and size of the hot plate is formed, the non-uniformity of the temperature in the substrate surface can be more effectively prevented.

Further, as in claim 7, the ventilation hole may be provided on the entire surface of the portion excluding the portion facing the exhaust port. In this way, by providing the ventilation holes on the entire surface at predetermined positions of the flow distribution plate, the overall aperture ratio can be increased even if the size of the ventilation holes is reduced, and the airflow generated in the processing chamber can be more evenly distributed. As a result, the temperature mismatch within the substrate surface caused by the air flow deviation is prevented. In addition,
The provision of the ventilation holes on the entire surface is not limited to the case where the ventilation holes are provided geometrically with a certain order, and it means that the ventilation holes are provided uniformly and without deviation.

According to an eighth aspect of the present invention, there is provided a heat treatment apparatus for a substrate, comprising: a hot plate on which a substrate is placed and heated; and a lid which covers the hot plate and forms at least a part of a processing chamber. A plurality of exhaust ports for exhausting gas in the processing chamber are provided at a position of the lid facing the upper surface of the substrate, and the substrate-side surface of the lid is covered between the exhaust ports and the heating plate. ，
A heat treatment apparatus for a substrate is provided, which is provided with a flow distribution plate having a plurality of dispersed ventilation holes.

As described above, by providing a plurality of exhaust ports and dispersively providing the exhaust ports themselves to which the air flow finally reaches, the air flow can be dispersed as compared with the conventional one, and more vent holes are provided. By providing the flow dividing plate, the air flow is further dispersed. Therefore, the deviation of the air flow over the substrate in the processing chamber is suppressed, and the heating temperature within the substrate surface becomes uniform.

According to the invention of claim 8, the ventilation hole may be provided on the entire surface of the flow dividing plate as in claim 9. As described above, when the ventilation holes are provided on the entire surface of the flow distribution plate, a more even air flow is formed, and as a result, the uniformity of the temperature within the substrate surface is further improved. It should be noted that the provision of the entire surface of the flow dividing plate means that the vent holes are provided at positions that are evenly and uniformly distributed, including the central portion of the flow dividing plate.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below. 1 is a plan view of a coating and developing treatment system 1 having a heating / cooling device according to the present embodiment, FIG. 2 is a front view of the coating and developing treatment system 1, and FIG. 3 is a coating and developing treatment system. It is a rear view of 1.

As shown in FIG. 1, the coating / development processing system 1 carries in and out, for example, 25 wafers W to / from the coating / development processing system 1 from the outside in cassette units, or carries the wafer W into / from a cassette C. A cassette station 2 for ejecting, a processing station 3 in which various processing devices for performing predetermined processing in a single-wafer type in a coating and developing processing process are arranged in multiple stages, and the processing station 3 is provided adjacent to the processing station 3. It has a configuration in which an interface section 4 for transferring the wafer W to and from an exposure apparatus (not shown) is integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a line in the X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placing table 5 serving as a placing portion. Then, this cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W accommodated in the cassette C (Z
Direction; vertical direction), a wafer transfer body 7 is provided so as to be movable along a transfer path 8 so that each cassette C can be selectively accessed.

The wafer carrier 7 has an alignment function for aligning the wafer W. The wafer carrier 7 is configured to be accessible to the extension device 32 belonging to the third processing device group G3 on the processing station 3 side as described later.

In the processing station 3, a main carrier unit 13 is provided in the center thereof, and various processing units are arranged in multiple stages around the main carrier unit 13 to form a group of processing units. In the coating and developing treatment system 1,
Four processing device groups G1, G2, G3, G4 are arranged, the first and second processing device groups G1, G2 are arranged on the front side of the developing processing system 1, and the third processing device group G3.
Is located adjacent to the cassette station 2 and
The processing device group G4 is disposed adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 includes the processing device group G1.
The wafer W can be loaded / unloaded into / from various processing devices (described later) arranged in G5 to G5.

In the first processing apparatus group G1, for example, as shown in FIG. 2, a resist coating apparatus 17 for coating a resist solution on the wafer W and a developing processing apparatus 18 for supplying a developing solution to the wafer W for processing. And are arranged in two stages in order from the bottom. Similarly, in the case of the second processing device group G2, the resist coating device 19 and the development processing device 20 are stacked in two stages in order from the bottom.

In the third processing unit group G3, for example, as shown in FIG. 3, a cooling unit 3 for cooling the wafer W is used.
0, an adhesion device 31 for enhancing the fixability of the resist solution and the wafer W, an extension device 32 for waiting the wafer W, pre-baking devices 33, 34 for drying the solvent in the resist solution, and a heating process after the development process. The post-baking devices 35, 36, etc. to be applied are stacked in, for example, 7 stages from the bottom.

In the fourth processing unit group G4, for example, a cooling unit 40, an extension cooling unit 41 for naturally cooling the mounted wafer W, an extension unit 42, and heating / cooling as a heat treatment unit according to the present embodiment. Devices 43, 44, 45 (PEB / C in FIG. 3
OL), post-baking devices 46, 47, etc. are stacked in order from the bottom, for example, in eight stages.

A wafer carrier 50 is provided at the center of the interface section 4. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction) and the θ direction (rotational direction around the Z axis). , Fourth processing unit group G4
The extension / cooling device 41, the extension device 42, the peripheral exposure device 51, and the exposure device (not shown) belonging to the above-mentioned type can be accessed.

The heat treatment apparatus of the present invention will be described below with reference to the present embodiment, which is embodied in the heating / cooling apparatus 44 for performing the above-mentioned heating and cooling treatment after exposure. The heating / cooling device 44 is a device capable of heating and cooling the wafer W in a single device.
It is useful for immediate cooling.

The structure of the heating / cooling device 44 will be described below. The casing 44a of the heating / cooling device 44
Inside, a thick plate-shaped base 65 is provided as shown in FIGS. The pedestal 65 has a heating unit 65a for heating the wafer W and a cooling unit 65b for cooling.

The heating portion 65a of the base 65 is provided with a hot plate housing port 68 for housing a hot plate 67 described later. A disk-shaped heat plate 67 for mounting and heating the wafer W is provided at the center of the heat plate accommodation port 68. The hot plate 67 is provided with a heater 70 as a heat source, and the heat of the heater 70 sets the hot plate 67 to a predetermined temperature. Also, this heater 70
The amount of heat generated is controlled by the temperature control device 72, and the temperature of the heating plate 67 can be adjusted and maintained.

On the outer peripheral portion of the heat plate 67, there is provided an annular supporting member 75 having a step portion on the inner side which is excellent in heat insulating property so as to support the side surface and the lower surface of the outer peripheral portion of the heat plate 67. Has become. The lower surface of the support member 75 is supported by a support base 76.

Further, on the outside of the support member 75 and the support base 76, there is provided a substantially cylindrical support ring 78 which surrounds the support member 75 and the support base 76 and forms a processing chamber S integrally with a lid 90 described later. There is. On the upper surface of this support ring 78,
Blow-out ports 80 are provided as a plurality of supply ports for ejecting an inert gas, for example, nitrogen gas, from a gas supply means (not shown) toward the inside of the processing chamber S. The inside of the chamber S can be purged. Further, an O-ring 83 is provided outside the outlet 80 and in contact with the lower surface of the lid 90, which will be described later, so that the atmosphere inside and outside the processing chamber S can be controlled when the processing chamber S is formed. It can be shut off.

Above the heating portion 65a of the base 65, there is provided a substantially cylindrical lid 90 having an open lower surface, which covers the heat plate 67 and forms the processing chamber S integrally with the upper surface of the support ring 78. Has been. Two arms 91 extending in the X direction are fixedly provided on the outer peripheral wall of the lid 90, as shown in FIG. The arm 91 is provided with a cylinder 92 that allows the arm 91 to move up and down, and the lid 90 can be moved up and down.

Inside the lid 90, an exhaust plate 90b for forming a dispersion chamber 90a in the upper part of the lid 90, and a flow dividing plate 95 located below the exhaust plate 90b are provided. At the position facing the center of the exhaust plate 90b, that is, the center of the wafer W placed on the heat plate 67, the exhaust port 90c is provided.
Is formed on the outer periphery of the lid 90.
An exhaust pipe 93 leading to the is connected. Therefore, the exhaust gas from the exhaust port 90c is exhausted from the exhaust pipe 93 to the outside of the casing 44a through the dispersion chamber 90a.

In the dispersion chamber 90a, the gas flowing in from the exhaust port 90c easily flows in the direction in which the exhaust pipe 93 is present.
It is provided for the purpose of preventing the gas on the opposite side of the exhaust pipe 93 in the processing chamber S from being exhausted more. In order to achieve such an object, a plurality of evenly arranged radial passages and circumferential passages are provided concentrically and alternately in the dispersion chamber 90a as shown in FIG. The port 90c and the exhaust pipe 93 are communicated with each other.

As shown in FIG. 8, a large number of vent holes 96 having a diameter of about 2 mm are radially provided in the flow dividing plate 95 at positions other than the central portion, that is, the portion facing the exhaust port 90c. With this configuration, the gas in the processing chamber S passes through the respective vent holes 96 of the flow dividing plate 95 and passes through the upper exhaust port 90.
It is designed to flow into c. Therefore, the airflow formed by the nitrogen gas from the air outlet 80 is prevented from flowing substantially linearly toward the exhaust port 90c as in the conventional case, and the airflow is dispersed toward the respective vent holes 96.

Below the heating plate 67, as shown in FIG. 4, a plurality of lift pins 100 are provided for supporting and lifting the wafer W when loading and unloading the wafer W. The elevating pin 100 is movable up and down by an elevating drive mechanism 101, and is configured to move up and down in a hole 102 penetrating the heating plate 67 and project onto the heating plate 67.

On the other hand, the cooling unit 65b of the base 65 is provided with a cooling plate 105 for cooling the wafer W after the wafer W is heated in the heating unit 65a as shown in FIGS. There is. This cooling plate 105
Is configured to move in the slit 106 provided on the base 65 along the moving rail 107 along the X direction, and is also movable in the vertical direction.

The cooling plate 105 has a substantially rectangular flat plate shape as a whole, and a liquid of a predetermined temperature, for example, constant temperature water supplied from an external constant temperature water supply source 108 is cooled inside the cooling plate 105. It is configured to circulate in the circulation path 105a in the plate 105 to cool the wafer W placed on the cooling plate 105. Further, slits 109 and 110 are formed at the end of the cooling plate 105 on the heating portion 65a side. These slits 109 and 110 are used to move the cooling plate 105 to the heating unit 65a side and receive the wafer W supported by the lifting pins 100 on the heating plate 67, as shown in FIG. When it is positioned above 67, the lifting pin 10
0 is provided so as not to become an obstacle. Therefore, the cooling plate 105 is movable on the heating plate 67.

Next, the heating and
Regarding the operation of the cooling device 44, the coating and developing system 1
The process of the photolithography process performed in 1. will be described.

First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the adhesion device 31 belonging to the third processing device group G3. In this adhesion device 31, a wafer W coated with an adhesion enhancer such as HMDS for improving the adhesion with the resist liquid
Is transported to the cooling device 30 by the main transport device 13 and cooled to a predetermined temperature. After that, the wafer W is
Resist coating device 17 or 19, prebaking device 34
Alternatively, it is sequentially conveyed to 35 and subjected to a predetermined treatment. After that, the wafer W is transferred to the extension cooling device 4
1 is transported.

Next, the wafer W is taken out of the extension cooling device 41 by the wafer carrier 50, and then transferred to the exposure device (not shown) via the peripheral exposure device 51. The wafer W that has undergone the exposure process is
After being transferred to the extension device 42 by the wafer transfer body 50, it is held by the main transfer device 13. Next, the wafer W is transferred to the heating / cooling device 43, 44 or 45 for performing the heating / cooling process after the exposure process.

The wafer W, which has been heated and cooled, is then processed by the main transfer device 13 into the development processing device 18 or 2.
0, the post-baking device 35, and the cooling device 30 are sequentially conveyed, and a predetermined process is performed in each device.
After that, the wafer W is returned to the cassette C by the wafer carrier 7 via the extension device 32, and a series of predetermined coating and developing processes is completed.

The operation of the heating / cooling device 44 for performing the above-mentioned heating / cooling process after exposure will be described in detail. First, before loading the wafer W, the lid 90 held by the arm 91 stands by above the heating plate 67 without forming the processing chamber S, and nitrogen gas is ejected from the nitrogen gas outlet 80. ing. Then, when the wafer W, which has undergone the previous step, that is, the pattern exposure processing, is carried into the casing 44a by the main carrier device 13, the heating unit 65a is previously prepared.
Is supported by the elevating pins 100 that are standing by above the heating plate 67.

Next, the lid 90 is lowered by the arm 91, and the lower surface of the lid 90 is the upper surface 7 of the support ring 78.
When contacted with 8a, the lid 90 and the support ring 78 are integrated to form the processing chamber S. At this time, a suction device (not shown) operates and the nitrogen gas in the processing chamber S starts to be exhausted from the exhaust port 90c. That is, the outlet 80
While the nitrogen gas is ejected from the nitrogen gas, by operating a suction device (not shown), the nitrogen gas rises in the processing chamber S through the ventilation holes 96 of the flow dividing plate 95 as shown in FIG. The gas flows into the exhaust port 90c, further passes through the dispersion chamber 90a, and is exhausted from the exhaust pipe 93. Therefore, an air flow is generated by the flow of the nitrogen gas, and a constant air flow atmosphere is formed in the processing chamber S until the heat treatment is completed.

Then, the wafer W is lifted by the lifting pins 100.
When the wafer W is lowered and placed on the heating plate 67 heated to a predetermined temperature, the heating process is started, and the wafer W is heated at the predetermined temperature for a predetermined time.

After a lapse of a predetermined time, the lifting pin 100
Thus, the wafer W is raised to a predetermined position, and heating by the heating plate 67 is completed. Then, the lid 70 is raised by the arm 91 and the processing chamber S is opened. Next, in this state, the cooling plate 105 moves onto the heating plate 67 and receives the wafer W. However, as described above, the constant temperature water circulates in the cooling plate 105 and the wafer W is cooled. The cooling process is started immediately after it is received on the plate 105.

Thereafter, the cooling plate 105 is replaced by the cooling unit 65.
b, the wafer W is cooled for a predetermined time, and then the wafer W is returned to the heating unit 65a again.
3 and is carried out from the casing 44a,
A series of heating / cooling processing is completed.

In the above embodiment, the lid 90 and the heating plate 6 are used.
Since the flow dividing plate 95 is provided between the gas flow port 7 and the flow path 7, the nitrogen gas ejected from the blowout port 80 is dispersed toward the respective vent holes 96 so as to flow evenly in the processing chamber S, as shown in FIG. . Therefore, it is possible to prevent the heating temperature of the wafer W from being affected by the heat accumulation in the portion where the air flow is poor as in the conventional case, and to prevent the heating temperature from becoming nonuniform in the plane of the wafer W. .

Further, by providing the vent hole 96 at a position which does not face the exhaust port 90c, nitrogen gas is prevented from flowing into the exhaust port 90c at a position where it is most likely to flow into the exhaust port 90c, that is, just below the exhaust port 90c. Therefore, nitrogen gas is made to flow in from other positions to form an even air flow in the processing chamber S. In the above embodiment, the exhaust port 9
Since 0c was formed in the central portion of the lid 90, the ventilation hole 96 of the flow dividing plate 95 was provided in the portion excluding the central portion thereof, but the exhaust port 90c was provided in a predetermined position other than the central portion. If so, the vent hole 96 may be provided at a position opposite to the predetermined position.

In the above embodiment, the circular ventilation holes 96 are radially provided in the flow dividing plate 95, but the ventilation holes 110 themselves may be formed in a slit shape and arranged radially as shown in FIG. Also, as shown in FIG. 12, a circular vent hole 96
May be provided concentrically, or as shown in FIG. 13, the ventilation holes 120 themselves may be formed in an arc shape and arranged concentrically. Further, as shown in FIG.
It may be provided evenly on the entire surface of the part of the flow distribution plate 95 that does not face the exhaust port 90c. In this case, vent 12
The size of 5 can be formed to have a diameter of about 0.5 mm, for example. That is, the diameter can be made smaller.

In the above embodiment, one exhaust port 90c is provided at the center of the lid, but a plurality of exhaust ports 90c may be provided. Hereinafter, such a case will be described.

As shown in FIG. 15, a plurality of exhaust ports 130c are concentrically provided on the exhaust plate 130b of the lid 130. Further, between the exhaust plate 130b and the heating plate 67,
As shown in FIG. 16, the flow dividing plate 1 is used as in the first embodiment.
35, the flow dividing plate 135 is provided with a plurality of ventilation holes 136 on the entire surface thereof, as shown in FIG. The other parts are the same as those in the first embodiment.

According to this structure, the air flow in the processing chamber S passes through each of the vent holes 136 of the flow dividing plate 135 and one of the exhaust ports 130c, and the dispersion chamber is the same as in the first embodiment. The gas is exhausted from the exhaust pipe 93 through 130a.

In the second embodiment, since the airflow in the processing chamber S flows evenly as in the first embodiment, the conventional heat-dwelling is prevented and the unevenness in the wafer W surface is prevented. It can be heated evenly. In addition, since a plurality of exhaust ports 130c are provided, the suction force of each exhaust port 130c is reduced by that amount, and even if the vent holes 136 are provided directly below the exhaust ports 130c, the air flow is partially present in the vent holes 136. Since there is no concentration, the vent holes 136 can be provided on the entire surface of the flow distribution plate 135. Therefore, unlike the first embodiment, it is not necessary to provide a restriction such as providing a vent hole in a portion except a position facing the exhaust port.

The shape of the vent holes 136 themselves may be another shape, that is, a slit shape or an arc shape, as in the first embodiment, and the arrangement of the vent holes 136 is concentric. It may be radial or radial.

Although the above embodiment is embodied as the heating / cooling device for performing the heat treatment after the exposure, of course, other heat treatment devices such as a pre-baking device and a post-baking device may be used. Furthermore, although the substrate is a wafer, it can be applied to other substrates, for example, a heat treatment device for an LCD substrate.

[0055]

According to the first to ninth aspects of the present invention, the air flow generated when the gas in the processing chamber is exhausted flows evenly in the processing chamber without unevenness. Instead, the heating temperature in the substrate surface is maintained evenly. Therefore, since the line width finally formed on the substrate is uniform, the yield can be improved.

In particular, according to claims 8 and 9, since a plurality of exhaust ports are provided, the ventilation holes of the flow dividing plate can be provided regardless of the positions of the exhaust ports, resulting in a simpler structure and more An unbiased air flow is formed, resulting in
The uniformity of the temperature within the plane of the substrate is improved.

[Brief description of drawings]

FIG. 1 is a plan view showing a schematic configuration of a coating and developing treatment system in which a heating / cooling device according to the present embodiment is incorporated.

FIG. 2 is a front view of the coating and developing treatment system of FIG.

FIG. 3 is a rear view of the coating and developing treatment system of FIG.

FIG. 4 is an explanatory view of a vertical cross section of the heating / cooling device according to the present embodiment.

5 is an explanatory plan view showing the outline of the configuration of the heating / cooling device in FIG. 4. FIG.

FIG. 6 is a perspective view showing the outline of the inside of a heating / cooling device.

FIG. 7 is an explanatory view of the inside of the dispersion chamber of the lid of the heating / cooling device as viewed from above.

FIG. 8 is a plan view of a flow dividing plate provided on the lid.

FIG. 9 is an explanatory plan view of the heating / cooling device showing a state where the cooling plate has moved to the heating unit side.

FIG. 10 is an explanatory diagram showing a state inside the heating / cooling device during the heat treatment.

FIG. 11 is a plan view showing another form of the flow distribution plate.

FIG. 12 is a plan view showing another form of the flow distribution plate.

FIG. 13 is a plan view showing another form of the flow distribution plate.

FIG. 14 is a plan view showing another form of the flow distribution plate.

FIG. 15 is an explanatory view of a cross section of the lid body showing an arrangement of the exhaust ports when the lid body is provided with a plurality of exhaust ports.

16 is an explanatory diagram showing an outline of the configuration of the entire heating / cooling device when the lid body of FIG. 15 is used.

17 is a plan view of the flow distribution plate provided on the lid body of FIG. 15. FIG.

FIG. 18 is an explanatory diagram of a vertical cross section showing a state in the processing chamber at the time of heating in the conventional heat processing apparatus.

[Explanation of symbols]

1 Coating and developing system 44 Heating / cooling device 65 base 67 Hot plate 90 Lid 90a dispersion chamber 90b exhaust plate 90c exhaust port 95 diversion board 96 vents W wafer

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-275512 (JP, A) JP-A-9-199408 (JP, A) JP-A-10-229037 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (9)

(57) [Claims] 1. A heating plate on which a substrate is placed and heated, and a lid which covers the heating plate and forms at least a part of a processing chamber, wherein a position of the lid facing the upper surface of the substrate is set. In a heat treatment apparatus provided with an exhaust port for exhausting gas in the processing chamber, between the exhaust port and the hot plate,
A flow distribution plate covering a surface of the lid body on the substrate side, wherein the flow distribution plate has a plurality of dispersed ventilation holes in a portion excluding a portion facing the exhaust port. The heat treatment device for the substrate. 2. The substrate heat treatment apparatus according to claim 1, wherein the exhaust port is provided at a position facing the center of the upper surface of the substrate. 3. The substrate heat treatment apparatus according to claim 1, wherein the ventilation holes are arranged radially. 4. The heat treatment apparatus for a substrate according to claim 1, wherein the ventilation holes are arranged concentrically. 5. The substrate heat treatment apparatus according to claim 3, wherein the vent hole itself is formed in a slit shape. 6. The substrate heat treatment apparatus according to claim 4, wherein the vent hole itself is formed in an arc shape. 7. The heat treatment of the substrate according to claim 1, wherein the ventilation hole is provided on the entire surface of the portion excluding a portion facing the exhaust port. apparatus. 8. A heat treatment apparatus for a substrate, comprising: a hot plate on which a substrate is placed and heated; and a lid which covers the hot plate and forms at least a part of a processing chamber, wherein the substrate upper surface of the lid is A plurality of exhaust ports for exhausting the gas in the processing chamber are provided at opposed positions, and a surface of the lid body on the substrate side is covered between the exhaust ports and the heating plate, and a plurality of dispersed ports are provided. It is characterized in that it is provided with a flow distribution plate having a ventilation hole,
Substrate heat treatment device. 9. The substrate heat treatment apparatus according to claim 8, wherein the ventilation holes are provided on the entire surface of the flow distribution plate.