KR102231773B1 - Method and Apparatus for treating substrate - Google Patents

Abstract

The present invention provides a method and apparatus for liquid processing a substrate. As a method of treating the substrate, the substrate is liquid-treated by supplying a liquid onto the substrate from a nozzle, and the nozzle moves relative to the substrate so that the impact area on the substrate to which the liquid discharged from the nozzle is impacted is changed. , The discharge direction of the liquid to the substrate is changed according to the impact area. Accordingly, it is possible to prevent the liquid film in some regions from being formed to have a lower thickness than other regions.

Description

Substrate processing method and apparatus TECHNICAL FIELD [Method and Apparatus for treating substrate}

The present invention relates to an apparatus and method for liquid processing a substrate.

Various processes such as photography, etching, ashing, thin film deposition, and cleaning processes are performed to manufacture semiconductor devices and flat panel display panels. Among these processes, the photographic process sequentially performs coating, exposure, and development steps. The coating process is a process of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process of exposing a circuit pattern on a substrate on which a photosensitive film is formed. In the developing process, the exposed area of the substrate is selectively developed.

In general, the developing process is a process of supplying a developer onto a rotating substrate, and the developer is supplied to a central region of the substrate. The developer supplied on the substrate diffuses outward by the centrifugal force, forming a liquid film.

However, as shown in FIG. 1, a liquid film having a thickness lower than that of other areas is formed in the impact area where the developer is impacted by the supply pressure of the developing solution. Accordingly, the developer forms a non-uniform liquid film over the entire area of the substrate W, which causes a non-uniform developing process for the area of the substrate W.

An object of the present invention is to provide an apparatus and method capable of uniformly treating the entire area of a substrate.

An object of the present invention is to provide an apparatus and method capable of preventing a liquid film having a lower thickness than other regions in a liquid impact area of a substrate from being formed.

An embodiment of the present invention provides a method and apparatus for liquid processing a substrate. As a method of treating the substrate, the substrate is liquid-treated by supplying a liquid onto the substrate from a nozzle, and the nozzle moves relative to the substrate so that the impact area on the substrate to which the liquid discharged from the nozzle is impacted is changed. , The discharge direction of the liquid to the substrate is changed according to the impact area.

The impact area includes a center area of the substrate, an edge area of the substrate, and a middle area between the center area and the edge area, and when the impact area is the center area, the discharge direction is perpendicular to the substrate. I can. When the impact area is the edge area, the discharge direction may be inclined with respect to the substrate. When the impact area is the middle area, the discharge direction may be inclined with respect to the substrate.

When the impact region is the edge region, the discharge direction may be inclined with respect to the substrate in a direction toward an end of the substrate. When the impact region is the middle region, the discharge direction may be inclined with respect to the substrate in a direction toward a central region of the substrate.

The nozzle is moved so that the impact area is changed between the center area of the substrate and the edge area of the substrate. When the impact area is the center area, the discharge direction is perpendicular to the substrate, and the impact area is the edge area. In this case, the discharge direction may be inclined with respect to the substrate in a direction toward the end of the substrate. When the impact region is the middle region, the discharge direction may be inclined with respect to the substrate in a direction toward a central region of the substrate.

When the impact area is the edge area, the impact area may be provided to span an end of the substrate.

In addition, when the impact region is the edge region, the discharge direction may be changed within a range inclined with respect to the substrate in a direction toward the end of the substrate.

In addition, when the impact area is the edge area, the nozzle may be moved vertically to adjust the size of the impact area.

While the substrate is being liquid-treated, the substrate is rotated, and the rotational speed of the substrate may be changed according to the discharge direction. When the liquid discharge direction is inclined toward a central region of the substrate, a rotational speed may be provided faster than when the liquid is inclined toward an end of the substrate.

When the liquid discharge direction is inclined toward the end of the substrate, a rotation speed may be slower than that when it is perpendicular to the substrate.

In addition, an apparatus for processing a substrate includes a substrate support unit that supports and rotates the substrate, a nozzle that discharges liquid onto a substrate supported by the substrate support unit, and moves the nozzle relative to the substrate supported by the substrate support unit. A movable member, and a controller for controlling the nozzle and the movable member, wherein the controller controls the nozzle and the movable member to change the discharging direction of the liquid according to the impact area on the substrate to which the liquid discharged from the nozzle is impacted. Control.

The controller controls the moving member so that the impact area is changed between the center area of the substrate and the edge area of the substrate, and the controller controls the discharge direction to be perpendicular to the substrate when the impact area is the center area, and the When the impact area is the edge area, the nozzle may be controlled so that the discharge direction is inclined toward the end of the substrate. When the impact region is the middle region, the controller may control the nozzle so that the discharge direction is inclined with respect to the substrate in a direction toward a central region of the substrate.

The controller may control the substrate processing unit such that the rotation speed of the substrate is changed according to the discharge direction. When the discharge direction of the liquid is inclined toward the central region of the substrate, the controller has a higher rotation speed than when the liquid discharge direction is inclined toward the end of the substrate, and the discharge direction of the liquid is toward the end of the substrate When inclined in the direction, the substrate processing unit may be controlled so that the rotational speed is slower than when it is perpendicular to the substrate.

When the impact area is the edge area, the controller may control the nozzle so that the impact area extends over an end of the substrate.

In addition, the controller may control the nozzle so that the edge region includes an end of the substrate.

In addition, the controller may control the nozzle so that when the impact area is the edge area, the discharge direction is changed in a direction toward the end of the substrate within a range inclined with respect to the substrate.

In addition, when the impact area is the edge area, the controller may adjust the size of the impact area by moving the nozzle up and down.

According to the exemplary embodiment of the present invention, the area of impact of the liquid is changed, and the discharge direction of the liquid to the substrate is changed according to the area of impact. Accordingly, it is possible to prevent the liquid film in some regions from being formed to have a lower thickness than other regions.

Further, according to the embodiment of the present invention, when the impact area is the middle area, the discharge direction is provided to be inclined toward the center area of the substrate. Accordingly, it is possible to prevent the liquid film in the center region and the middle region of the substrate from being formed to have a lower thickness than other regions.

Further, according to the embodiment of the present invention, when the impact area is the edge area, the discharge direction is provided to be inclined toward the end of the substrate. This makes it possible to quickly treat process by-products remaining on the substrate.

1 is a diagram showing a process of supplying a liquid onto a substrate in general.
2 is a plan view of a substrate processing facility according to an embodiment of the present invention.
3 is a cross-sectional view of the facility of FIG. 2 viewed from the direction AA.
4 is a cross-sectional view of the facility of FIG. 2 as viewed from a BB direction.
5 is a cross-sectional view of the facility of FIG. 2 as viewed from the CC direction.
6 is a plan view showing the substrate processing apparatus of FIG. 2.
7 is a cross-sectional view illustrating the substrate processing apparatus of FIG. 6.
8 is a perspective view showing the first nozzle member of FIG. 6.
9 is a graph showing positions and angles of nozzles when a substrate is processed using the apparatus of FIG. 7.
10 to 13 are views illustrating a process of processing a substrate in FIG. 9.
14 is a graph showing another embodiment of the graph of FIG. 9.
15 is another embodiment showing a process of processing a substrate in FIG. 13.
16 is another embodiment showing a process of processing a substrate in FIG. 13.
17 is another embodiment showing a process of processing a substrate in FIG. 13.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely describe the present invention to those with average knowledge in the art. Therefore, the shape of the element in the drawings has been exaggerated to emphasize a clearer description.

The equipment of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facility of this embodiment may be connected to an exposure apparatus and used to perform a developing process on a substrate. However, the present embodiment is not limited thereto, and can be applied in various ways as long as it is a process of processing a substrate. In addition, in the present embodiment, a case in which a wafer is used as a substrate will be described as an example.

Hereinafter, a substrate processing facility of the present invention will be described with reference to FIGS. 2 to 17.

2 is a plan view of a substrate processing facility according to an embodiment of the present invention, FIG. 3 is a view of the facility of FIG. 2 viewed from the AA direction, FIG. 4 is a view of the facility of FIG. 2 viewed from the BB direction, and FIG. 5 is It is a view of the facility of FIG. 2 as viewed from the CC direction.

2 to 5, the substrate processing facility 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, and a second buffer module 500. ), a pre-exposure processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700 Are sequentially arranged in a row in one direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( The direction in which 700) is arranged is called the first direction 12, the direction perpendicular to the first direction 12 when viewed from the top is called the second direction 14, and the first direction 12 and the second A direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door in the front may be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( 700) will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 in which the substrates W are accommodated is placed. A plurality of placement tables 120 are provided, and the placement tables 200 are arranged in a row along the second direction 14. In Figure 2, four mounting tables 120 were provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the mounting table 120 of the load port 100 and the first buffer module 300. The index module 200 includes a frame 210, an index robot 220, and a guide rail 230. The frame 210 is generally provided in the shape of a rectangular parallelepiped with an empty inside, and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 to be described later. The index robot 220 and the guide rail 230 are disposed in the frame 210. The index robot 220 is driven by four axes so that the hand 221 that directly handles the substrate W can move and rotate in the first direction 12, the second direction 14, and the third direction 16. It has this possible structure. The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixedly installed on the arm 222. The arm 222 is provided in a stretchable structure and a rotatable structure. The support 223 is disposed along the third direction 16 in its longitudinal direction. The arm 222 is coupled to the support 223 so as to be movable along the support 223. Support 223 is fixedly coupled to the pedestal 224. The guide rail 230 is provided so that its longitudinal direction is disposed along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be able to move linearly along the guide rail 230. Further, although not shown, a door opener for opening and closing the door of the cassette 20 is further provided on the frame 210.

The first buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 200 and the coating and developing module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located in the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed along the third direction 16 from below. The first buffer 320 is located at a height corresponding to the coating module 401 of the coating and developing module 400 to be described later, and the second buffer 330 and the cooling chamber 350 are applied to a coating and developing module ( It is located at a height corresponding to the developing module 402 of 400). The first buffer robot 360 is positioned to be spaced apart a predetermined distance from the second buffer 330, the cooling chamber 350, and the first buffer 320 and the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed in the housing 331 and are provided to be spaced apart from each other along the third direction 16. One substrate W is placed on each support 332. In the housing 331, the index robot 220, the first buffer robot 360, and the developing unit robot 482 of the developing module 402 to be described later attach the substrate W to the support 332 in the housing 331. An opening (not shown) is provided in a direction in which the index robot 220 is provided, a direction in which the first buffer robot 360 is provided, and a direction in which the developing unit robot 482 is provided so as to be carried in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. However, the housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided, and in a direction in which the applicator robot 432 positioned in the application module 401 to be described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to an example, the number of supports 332 provided to the second buffer 330 may be greater than the number of supports 322 provided to the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixedly installed on the arm 362. The arm 362 is provided in a stretchable structure so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be able to move linearly in the third direction 16 along the support 363. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer than this in an upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven only in two axes along the second direction 14 and the third direction 16.

Each of the cooling chambers 350 cools the substrate W. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. As the cooling means 353, various methods, such as cooling using cooling water or cooling using a thermoelectric element, may be used. In addition, a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352 may be provided in the cooling chamber 350. The housing 351 includes the index robot 220 so that the developing unit robot 482 provided to the index robot 220 and the developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352. The provided direction and the developing unit robot 482 have an opening (not shown) in the provided direction. In addition, doors (not shown) for opening and closing the above-described opening may be provided in the cooling chamber 350.

The coating and developing module 400 performs a process of applying a photoresist onto the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The coating and developing module 400 has a substantially rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The coating module 401 and the developing module 402 are disposed to be partitioned into layers therebetween. According to one example, the application module 401 is located above the developing module 402.

The coating module 401 includes a process of applying a photoresist, such as a photoresist, to the substrate W, and a heat treatment process such as heating and cooling of the substrate W before and after the resist coating process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist coating chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. Accordingly, the resist coating chamber 410 and the bake chamber 420 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in each of the first direction 12 and the third direction 16. In the figure, an example in which six resist application chambers 410 are provided is shown. A plurality of bake chambers 420 are provided in each of the first direction 12 and the third direction 16. In the drawing, an example in which six bake chambers 420 are provided is shown. However, unlike this, the number of bake chambers 420 may be provided.

The transfer chamber 430 is positioned parallel to the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, an application unit robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is the first of the bake chambers 420, the resist coating chambers 400, the first buffer 320 of the first buffer module 300, and the second buffer module 500 to be described later. The substrate W is transferred between the cooling chambers 520. The guide rail 433 is disposed so that its longitudinal direction is parallel to the first direction 12. The guide rail 433 guides the applicator robot 432 to linearly move in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixedly installed on the arm 435. The arm 435 is provided in a stretchable structure to allow the hand 434 to move in the horizontal direction. The support 436 is provided such that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be able to move linearly in the third direction 16 along the support 436. The support 436 is fixedly coupled to the support 437, and the support 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

All of the resist application chambers 410 have the same structure. However, the types of photoresists used in each resist application chamber 410 may be different from each other. As an example, a chemical amplification resist may be used as the photo resist. The resist coating chamber 410 applies a photoresist onto the substrate W. The resist application chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate W. The support plate 412 is provided rotatably. The nozzle 413 supplies a photoresist onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tubular shape and may supply a photoresist to the center of the substrate W. Optionally, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and a discharge port of the nozzle 413 may be provided as a slit. In addition, a nozzle 414 supplying a cleaning solution such as deionized water may be further provided in the resist application chamber 410 to clean the surface of the substrate W on which the photoresist is applied.

The bake chamber 420 heats the substrate W. For example, the bake chambers 420 heat the substrate W to a predetermined temperature before applying the photoresist to remove organic matter or moisture from the surface of the substrate W, or use a photoresist as a substrate ( A soft bake process or the like performed after coating on W) is performed, and a cooling process or the like of cooling the substrate W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as cooling water or a thermoelectric element. Further, the heating plate 422 is provided with a heating means 424 such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in one bake chamber 420, respectively. Optionally, some of the bake chambers 420 may have only the cooling plate 421 and some of the bake chambers 420 may have only the heating plate 422.

The developing module 402 is a developing process in which a part of the photoresist is removed by supplying a developer to obtain a pattern on the substrate W, and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process. Includes. The developing module 402 has a developing chamber 800, a bake chamber 470, and a transfer chamber 480. The developing chamber 800, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. Accordingly, the developing chamber 800 and the bake chamber 470 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 480 interposed therebetween. A plurality of developing chambers 800 are provided, and a plurality of developing chambers 800 are provided in each of the first direction 12 and the third direction 16. In the drawing, an example in which six developing chambers 800 are provided is shown. A plurality of bake chambers 470 are provided in each of the first direction 12 and the third direction 16. In the figure, an example in which six bake chambers 470 are provided is shown. However, unlike this, the number of bake chambers 470 may be provided.

The transfer chamber 480 is positioned parallel to the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, a developing unit robot 482 and a guide rail 483 are positioned. The transfer chamber 480 has a generally rectangular shape. The developing unit robot 482 includes the baking chambers 470, the developing chambers 800, the second buffer 330 and the cooling chamber 350 of the first buffer module 300, and the second buffer module 500. Transfer the substrate (W) between the second cooling chamber 540 of. The guide rail 483 is arranged so that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing unit robot 482 to linearly move in the first direction 12. The developing robot 482 has a hand 484, an arm 485, a support 486, and a pedestal 487. The hand 484 is fixedly installed on the arm 485. The arm 485 is provided in a stretchable structure to allow the hand 484 to move in the horizontal direction. The support 486 is provided such that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 so as to be able to move linearly in the third direction 16 along the support 486. The support 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

All of the developing chambers 800 have the same structure. However, the types of developing solutions used in each of the developing chambers 800 may be different from each other. The developing chamber 800 is provided as an apparatus for developing and processing a substrate. The developing chamber 800 removes a region of the photoresist on the substrate W to which light is irradiated. At this time, the region irradiated with light in the protective layer is also removed. Depending on the type of photoresist that is selectively used, only the areas of the photoresist and the protective layer that are not irradiated with light may be removed.

In the present embodiment, the developing chamber 800 is provided as a substrate processing apparatus 800 for liquid processing the substrate W. 6 is a plan view illustrating the substrate processing apparatus of FIG. 2, and FIG. 7 is a cross-sectional view illustrating the substrate processing apparatus of FIG. 6. 6 and 7, the substrate processing apparatus 800 performs a developing process on a single substrate W. The substrate processing apparatus 800 includes a substrate support unit 810, a processing container 820, an elevating unit 840, a liquid supply unit 850, and a controller 890.

The substrate support unit 810 supports and rotates the substrate W. The substrate support unit 810 includes a support plate 812 and rotation driving members 814 and 815. The support plate 812 supports the substrate. The support plate 812 is provided to have a circular plate shape. The support plate 812 may have a diameter smaller than that of the substrate W. An adsorption hole 816 is formed on the support surface of the support plate 812, and the adsorption hole 816 is provided with negative pressure. The substrate W may be vacuum-adsorbed on the support surface by negative pressure.

The rotation driving members 814 and 815 rotate the support plate 812. The rotation drive members 814 and 815 include a rotation shaft 814 and a driver 815. The rotation shaft 814 is provided so as to have a cylindrical shape whose longitudinal direction faces up and down. The rotation shaft 814 is coupled to the bottom surface of the support plate 812. The actuator 815 transmits a rotational force to the rotation shaft 814. The rotation shaft 814 is rotatable about a central axis by a rotational force provided from the driver 815. The support plate 812 is rotatable together with the rotation shaft 814. The rotational speed of the rotational shaft 814 is adjusted by the driver 815 so that the rotational speed of the substrate W can be adjusted. For example, the driver 815 may be a motor.

The processing container 820 provides a processing space in which a developing process is performed. The processing container 820 recovers the liquid used in the developing process. The processing container 820 is provided in a cup shape with an open top. The processing container 820 includes an internal recovery container 822 and an external recovery container 826. Each of the recovery bins 822 and 826 recovers different types of liquids among the liquids used in the process. The inner recovery container 822 is provided in an annular ring shape surrounding the substrate support member 810, and the outer recovery container 826 is provided in an annular ring shape surrounding the inner recovery container 822. Each of the inner space 822a of the inner recovery bin 822 and the space 826a between the outer recovery bin 826 and the inner recovery bin 822 is a liquid to the inner recovery bin 822 and the outer recovery bin 826, respectively. It functions as an inlet through which it is introduced. Recovery lines 822b and 826b extending vertically in a direction below the bottom of each of the recovery bins 822 and 826 are connected. Each of the recovery lines 822b and 826b discharges the liquid introduced through the respective recovery bins 822 and 826. The discharged liquid may be reused through an external treatment liquid regeneration system (not shown).

The lifting unit 840 adjusts the relative height between the processing container 820 and the substrate W. The lifting unit 840 moves the processing container 820 in the vertical direction. The lifting unit 840 includes a bracket 842, a moving shaft 844, and a driver 846. The bracket 842 connects the processing container 820 and the moving shaft 844. The bracket 842 is fixedly installed on the vertical wall 822 of the processing container 820. The moving shaft 844 is provided so that its longitudinal direction faces up and down. The upper end of the moving shaft 844 is fixedly coupled to the bracket 842. The moving shaft 844 is moved in the vertical direction by the actuator 846, and the processing container 820 can be moved up and down together with the moving shaft 844. For example, the driver 846 may be a cylinder or a motor.

The liquid supply unit 850 supplies liquid onto the substrate W supported by the substrate support unit 810. The liquid supply unit 850 includes a first supply member 870 and a second supply member 880. The first supply member 870 supplies the pre-wetting liquid and the processing liquid, and the second supply member 880 supplies the rinse liquid and the cleaning liquid.

The first supply member 870 includes a first nozzle member 1300 and a first moving member 1100. The first moving member 1100 linearly moves the first nozzle member 1300 in the first direction 12. The first moving member 1100 moves the first nozzle member 1300 to a process position or a standby position. Here, the process position is a position where the first nozzle member 1300 faces the substrate W, and the standby position is a position away from the process position. The first moving member 1100 includes a first guide rail 1120 and a first arm 1140. The first guide rail 1120 is located on one side of the processing container 820. The first guide rail 1120 is provided to have a longitudinal direction parallel to the moving direction of the first nozzle member 1300. For example, the length direction of the first guide rail 1120 may be provided to face the first direction 12.

The first arm 1140 is provided to have a bar shape. When viewed from above, the first arm 1140 is provided to have a longitudinal direction perpendicular to the first guide rail 1120. for example. The length direction of the first arm 1140 may be provided to face the second direction 14 perpendicular to the first direction 12. One end of the first arm 1140 is hinged to the first nozzle member 1300, and the other end is connected to the first guide rail 1120 by a bracket. A hinge shaft 1490 is provided between the first arm 1140 and the first nozzle member 1300. The first arm 1140 and the first nozzle member 1300 are movable together along the length direction of the first guide rail 1120.

The first nozzle member 1300 discharges the pre-wetting liquid in a stream method and supplies the processing liquid in a stream method and a liquid curtain method, respectively. For example, the pre-wetting liquid is a liquid for converting the surface state of the substrate W into a wet state, and may be supplied on the substrate W before the processing liquid is supplied. 8 is a perspective view showing the first nozzle member of FIG. 6. Referring to FIG. 8, the first nozzle member 1300 includes a body 1400 and a body 1470. The body 1400 is hinged to the first arm 1140 so as to be axially rotatable with respect to the first arm 1140. The body 1400 is rotatable about a direction parallel to the second direction 14 about a central axis. A circular discharge port 1450 and a wetting liquid discharge port 1420 are formed on the bottom of the body 1400. The circular discharge port 1450 and the wetting liquid discharge port 1420 are sequentially arranged along the first direction 12. The processing liquid is discharged in a stream manner through the circular discharge port 1450, and the pre-wetting liquid is discharged in a stream manner through the wetting liquid discharge port 1420. When viewed from above, the movement path of the first nozzle member 1300 may include a position where the wetting liquid discharge port 1420 and the circular discharge port 1450 coincide with the center of the substrate W. Accordingly, in the first nozzle member 1300, the discharge direction of the processing liquid and the wetting liquid can be changed with respect to the substrate. According to an example, the treatment liquid may be provided so that the discharge direction is perpendicular to the substrate, inclined downward in a direction toward an end of the substrate, or inclined downward in a direction toward the center of the substrate.

The body 1470 is coupled to one side of the body 1400. A slit discharge port 1480 is formed in the body 1470. The slit discharge port 1480 has a longitudinal direction parallel to the first direction 12. The slit discharge port 1480 is provided to be inclined downward as it approaches the body 1400. When viewed from above, the slit discharge port 1480 and the circular discharge port 1450 may be positioned to face each other in a second direction 14 perpendicular to the first direction 12. for example. The treatment liquid discharged from each of the circular discharge port 1450 and the slit discharge port 1480 may be the same type of liquid. The treatment liquid may be a developer.

According to an example, the treatment liquid may be supplied first through the circular discharge port 1450 and then secondarily supplied through the slit discharge port 1480. The treatment liquid supplied from the circular discharge port 1450 forms a uniform treatment liquid film on the substrate W, and the treatment liquid supplied from the slit discharge port 1480 may increase the thickness of the treatment liquid film.

Referring back to FIGS. 6 and 7, the second supply member 880 supplies a rinse liquid and a cleaning liquid. The second supply member 880 includes a second nozzle member 1700 and a second moving member 1500. The second moving member 1500 moves the second nozzle member 1700 in a vertical direction and a horizontal direction perpendicular thereto. For example, the horizontal direction may be a direction parallel to the first direction 12. The second moving member 1500 simultaneously moves the second nozzle member 1700 to a process position or a standby position. The second moving member 1500 includes a second guide rail 1520 and a vertical driver 1540. The second guide rail 1520 is located on one side of the processing container 820. The second guide rail 1520 is provided to have a longitudinal direction parallel to the moving direction of the second nozzle member 1700. For example, the length direction of the second guide rail 1520 may be provided to face the first direction 12. A vertical driver 1540 is installed on the second guide rail 1520. The second guide rail 1520 is provided as a horizontal driver 882 that moves the vertical driver 1540 in the horizontal direction. The vertical driver 1540 moves the second nozzle member 1700 in the vertical direction. For example, the vertical driver 1540 may be a cylinder or a motor. Accordingly, the second nozzle member 1700 is moved in the vertical direction by the vertical driver 1540 and can be moved in the horizontal direction by the second guide rail 1520.

The second nozzle member 1700 includes a second arm 1720, a rinse nozzle 1740, and a cleaning nozzle 1760. The second arm 1720 has a bar shape. When viewed from above, the second arm 1720 is provided to have a longitudinal direction perpendicular to the second guide rail 1520. for example. The length direction of the second arm 1720 may be provided to face the second direction 14 perpendicular to the first direction 12. A second nozzle member 1700 is installed at one end of the second arm 1720, and the other end is connected to the vertical actuator 1540. The vertical driver 1540 adjusts the relative height of the cleaning nozzle 1760 with respect to the substrate W.

The rinse nozzle 1740 supplies the rinse liquid, and the cleaning nozzle 1760 supplies the rinse liquid. The rinse nozzle 1740 supplies the rinse liquid in a dropwise manner, and the cleaning nozzle 1760 supplies the rinse liquid in a mist manner. When viewed from above, the rinse nozzle 1740 and the cleaning nozzle 1760 may be positioned to be arranged in a direction parallel to the first direction. For example, the rinse liquid and the cleaning liquid may be of the same type. The rinse liquid and the cleaning liquid may be pure water. The rinse liquid may be first supplied to the substrate W, and then the cleaning liquid may be secondarily supplied. The cleaning liquid may be supplied onto the liquid film formed by the rinse liquid.

The controller 890 controls the first moving member so that the first nozzle member 1300 moves relative to the substrate W. The controller 890 includes the first nozzle member 1300 and the first moving member ( 1100). The controller 890 may control the first movable member 1100 so that the impact area of the substrate W discharged from the first nozzle member 1300 and the processing liquid is impacted passes through the center of the substrate.

The impact area includes a center area, an edge area, and a middle area between them. The discharging direction of the treatment liquid is provided differently for each region. According to an example, when the impact area is the central area, the discharge direction may be provided perpendicular to the substrate. When the impact area is the edge area, the discharge direction may be provided to be inclined toward the end of the substrate W. When the impact area is the middle area, the discharge direction may be provided to be inclined toward the central area of the substrate W.

Optionally, the discharging direction of the treatment liquid may be provided equally between some regions.

Next, a process of processing the substrate W using the substrate processing apparatus described above will be described. The method of processing the substrate W includes a wetting liquid supply step, a first treatment liquid supply step, a second treatment liquid supply step, and a rinse liquid supply step. The wetting liquid supply step, the first treatment liquid supply step, the first treatment liquid supply step, the rinse liquid supply step, and the washing liquid supply step are sequentially performed.

The step of supplying the wetting liquid is a step of supplying the pre-wetting liquid onto the substrate W. In the step of supplying the wetting liquid, the wetting liquid discharge port 1420 is positioned to face the center of the substrate W. The pre-wetting liquid is supplied to the center of the substrate W and diffuses over the entire area of the substrate W by the rotation of the substrate W. The surface of the substrate W is converted into a wet state by the pre-wetting liquid.

The first processing liquid supply step is a step of supplying the processing liquid onto the substrate W in a stream manner. 9 is a graph showing a position and an angle of a first nozzle member during a step of supplying a first treatment liquid using the apparatus of FIG. 7, and FIGS. 10 to 13 are views illustrating a process of processing a substrate in FIG. 9. 9 to 13, in the step of supplying the first treatment liquid, the impact area of the treatment liquid is moved from the center of the substrate W to the edge regions.

The first treatment liquid supply step includes a first treatment step, a second treatment step, a third treatment step, and a fourth treatment step. The first processing step, the second processing step, the third processing step, and the fourth processing step are sequentially performed.

When the first processing step proceeds, the processing liquid is supplied to the central region of the substrate W. At this time, the discharge direction of the processing liquid is provided perpendicular to the substrate W. While the processing liquid is supplied to the central region, the rotational speed of the substrate W is provided at the first speed. Accordingly, the processing liquid develops the developing area on the substrate W.

During the second treatment step, the impact area and the discharge direction of the treatment liquid are maintained the same as in the first treatment step. However, the rotational speed of the substrate W is changed to a second speed that is faster than the first speed. Accordingly, the processing liquid can be rapidly diffused over the entire area of the substrate W, and some developing areas that have not been developed in the first processing step are developed.

When the third processing step proceeds, the position of the first nozzle member is moved so that the impact area of the processing liquid includes the middle area. The discharge direction of the processing liquid is provided so as to be inclined with respect to the substrate W in a direction toward the central region of the substrate W. While the processing liquid is supplied to the middle region, the rotational speed of the substrate W is provided at a third speed, which is faster than the second speed. A puddle by the processing liquid is formed in the central region and the middle region of the substrate W by the discharge direction of the processing liquid, and development processing on the central region and the middle region of the substrate W can be concentrated. This is to prevent the processing liquid film in the center area and the middle area from having a lower thickness than the edge area in the first processing step and the second processing step, so that the development treatment for the center area and the middle area is insufficient compared to the edge area.

When the fourth processing step is performed, the position of the first nozzle member is moved so that the impact area of the processing liquid includes the edge area. The discharging direction of the processing liquid is provided so as to be inclined with respect to the substrate W in a direction toward the end of the substrate W. While the processing liquid is supplied to the edge region, the rotational speed of the substrate W is faster than the first speed and is provided at a slower speed than the second speed. Accordingly, process by-products generated during the development process can be quickly discharged to the outside of the substrate W.

The second processing liquid supply step is a step of supplying the processing liquid onto the substrate W in a liquid curtain manner. In the second processing liquid supply step, the processing liquid supplied from the slit discharge port 1480 is supplied to the substrate W. The discharge position of the processing liquid is moved in a direction from the center of the substrate W toward the edge region. Accordingly, the thickness of the processing liquid film is increased, and development processing efficiency of the substrate W can be improved.

In the rinse liquid supply step, the treatment liquid remaining on the substrate W is rinsed. In the rinse liquid supply step, the rinse liquid is supplied dropwise onto the substrate W. The treatment liquid film is removed by the rinse liquid, and a liquid film of the rinse liquid is formed.

According to the above-described embodiment, it has been described that the first treatment liquid supply step includes a first treatment step, a second treatment step, a third treatment step, and a fourth treatment step. However, as shown in FIG. 14, the step of supplying the first treatment liquid may further include a first intermediate step and a second intermediate step. The first intermediate step may be performed between the second processing step and the third processing step, and the second intermediate step may be performed in the third processing step and the fourth processing step.

In the first intermediate step, the position of the first nozzle member may be moved so that the impact area of the treatment liquid includes the middle area. The discharge direction of the processing liquid may be provided to be inclined with respect to the substrate W in a direction toward the end of the substrate. In the first intermediate step, the substrate may be rotated at a speed higher than the first speed and lower than the second speed.

In the second intermediate step, the position of the first nozzle member may be moved so that the impact area of the processing liquid includes the central area of the substrate W. The discharge direction of the processing liquid may be provided to be inclined with respect to the substrate in a direction toward the end of the substrate. In the second intermediate step, the substrate may be rotated at a speed higher than that of the first intermediate step and lower than the second speed.

In addition, according to the above-described embodiment, in the fourth processing step, the impact area of the treatment liquid includes the edge region, and the discharge direction of the treatment liquid is provided so as to be inclined with respect to the substrate W in a direction toward the end of the substrate W. It was described as being. However, as shown in FIG. 15, the impact area of the treatment liquid may be provided to span the end of the substrate. Accordingly, a part of the processing liquid may be supplied to the edge region of the substrate W, and another part may be provided to the outer portion of the substrate W. In a region including the edge of the substrate W, more process by-products remain than in other regions, and the removal rate of the process by-products is lower than that of the other regions. The processing liquid is supplied across the end of the substrate W, so that the removal rate of residual process by-products can be increased.

Also, as shown in FIG. 16, in the fourth processing step, the impact area of the processing liquid may be continuously changed. The discharge direction of the processing liquid may be continuously changed (W) within a range inclined with respect to the substrate W in a direction toward the end of the substrate W. Accordingly, it is possible to increase the removal rate of process by-products remaining in the edge region of the substrate.

In addition, in the above-described embodiment, it has been described that the first moving member 1100 of the first supply member 870 linearly moves the first nozzle member 1300 in the horizontal direction to move or change the position of the impact area. However, the first moving member 1100 may further move the first nozzle member 1300 in the vertical direction.

17, in the fourth processing step, the first nozzle member 1300 may be moved in the vertical direction. Accordingly, the size of the impact area of the treatment liquid can be changed, and the removal range of process by-products can be adjusted.

The change in the size of the impact area is not limited to the fourth processing step, and may be selectively applied to the first processing step, the second processing step, and the third processing step.

Referring again to FIGS. 2 to 5, the bake chamber 470 of the developing module 402 heat-treats the substrate W. For example, the bake chambers 470 have a post bake process for heating the substrate W before the development process is performed, a hard bake process for heating the substrate W after the development process is performed, and heating after each bake process. A cooling process or the like of cooling the resulting substrate W is performed. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as cooling water or a thermoelectric element. Alternatively, the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only the cooling plate 471 and some of the bake chambers 470 may have only the heating plate 472.

As described above, in the coating and developing module 400, the coating module 401 and the developing module 402 are provided to be separated from each other. In addition, when viewed from above, the application module 401 and the developing module 402 may have the same chamber arrangement.

The second buffer module 500 is provided as a passage through which the substrate W is transported between the coating and developing module 400 and the pre-exposure processing module 600. In addition, the second buffer module 500 performs a predetermined process such as a cooling process or an edge exposure process on the substrate W. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560. Have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located in the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the developing module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. When viewed from above, the buffer 520 is disposed along the transfer chamber 430 and the first direction 12 of the application module 401. The edge exposure chamber 550 is disposed to be spaced apart from the buffer 520 or the first cooling chamber 530 by a predetermined distance in the second direction 14.

The second buffer robot 560 transports the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a similar structure to the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W processed by the coating module 401. The first cooling chamber 530 cools the substrate W on which the process was performed in the coating module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes the edges of the substrates W on which the cooling process has been performed in the first cooling chamber 530. The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transferred to a pretreatment module 601 to be described later. The second cooling chamber 540 cools the substrates W before the substrates W processed in the post-processing module 602 to be described later are transferred to the developing module 402. The second buffer module 500 may further have a buffer added to a height corresponding to the developing module 402. In this case, the substrates W processed by the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402.

When the exposure apparatus 900 performs an immersion exposure process, the pre-exposure processing module 600 may process a process of applying a protective film to protect the photoresist film applied to the substrate W during immersion exposure. In addition, the pre-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using a chemically amplified resist, the pre-exposure processing module 600 may process the post-exposure bake process.

The pre-exposure processing module 600 includes a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before performing the exposure process, and the post-processing module 602 performs a process of processing the substrate W after the exposure process. The pre-treatment module 601 and the post-treatment module 602 are arranged to be partitioned into layers therebetween. According to one example, the pre-processing module 601 is located above the post-processing module 602. The pretreatment module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 includes a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. Accordingly, the protective film application chamber 610 and the bake chamber 620 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 630 interposed therebetween. A plurality of protective film application chambers 610 are provided, and are disposed along the third direction 16 to form a layer with each other. Optionally, a plurality of protective layer application chambers 610 may be provided in each of the first direction 12 and the third direction 16. A plurality of bake chambers 620 are provided, and are disposed along the third direction 16 to form layers with each other. Optionally, a plurality of bake chambers 620 may be provided in each of the first direction 12 and the third direction 16.

The transfer chamber 630 is positioned parallel to the first cooling chamber 530 of the second buffer module 500 in the first direction 12. A pre-treatment robot 632 is located in the transfer chamber 630. The transfer chamber 630 has a generally square or rectangular shape. The pretreatment robot 632 is between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500, and the first buffer 720 of the interface module 700 to be described later. Transfer the substrate W. The pretreatment robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixedly installed on the arm 634. The arm 634 is provided in a stretchable structure and a rotatable structure. The arm 634 is coupled to the support 635 to allow linear movement along the support 635 in the third direction 16.

The protective film application chamber 610 applies a protective film to protect the resist film on the substrate W during liquid immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with an open top. The support plate 612 is located in the housing 611 and supports the substrate W. The support plate 612 is provided rotatably. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the support plate 612. The nozzle 613 has a circular tubular shape, and a protective liquid can be supplied to the center of the substrate W. Optionally, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and a discharge port of the nozzle 613 may be provided as a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid contains a foamable material. As the protective solution, a photoresist and a material having a low affinity for water may be used. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 612.

The bake chamber 620 heats the substrate W on which the protective film is applied. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as cooling water or a thermoelectric element. Alternatively, the heating plate 622 is provided with a heating means 624 such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in one bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, and some of the bake chambers 620 may have only the cooling plate 621.

The post-treatment module 602 includes a cleaning chamber 660, a post-exposure bake chamber 670, and a transfer chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure bake chamber 670 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 680 interposed therebetween. A plurality of cleaning chambers 660 are provided, and may be disposed along the third direction 16 to form layers with each other. Optionally, a plurality of cleaning chambers 660 may be provided in each of the first direction 12 and the third direction 16. After exposure, a plurality of bake chambers 670 are provided, and may be disposed along the third direction 16 to form layers with each other. Optionally, after exposure, a plurality of bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned parallel to the second cooling chamber 540 of the second buffer module 500 and in the first direction 12 when viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post-processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 includes the cleaning chambers 660, the post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second of the interface module 700 to be described later. The substrate W is transported between the buffers 730. The post-processing robot 682 provided to the post-processing module 602 may be provided in the same structure as the pre-processing robot 632 provided to the pre-processing module 601.

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. The support plate 662 is provided rotatably. The nozzle 663 supplies a cleaning liquid onto the substrate W placed on the support plate 662. Water such as deionized water may be used as the cleaning liquid. The cleaning chamber 660 supplies a cleaning solution to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotated, the nozzle 663 may linearly move or rotate from the center region of the substrate W to the edge region.

After exposure, the bake chamber 670 heats the substrate W on which the exposure process has been performed using far ultraviolet rays. In the post-exposure bake process, the substrate W is heated to amplify the acid generated in the photoresist by exposure to complete the change in the properties of the photoresist. After exposure, the bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. After exposure, the bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as cooling water or a thermoelectric element. In addition, optionally, a bake chamber having only the cooling plate 671 may be further provided.

As described above, in the pre-exposure processing module 600, the pre-processing module 601 and the post-processing module 602 are provided to be completely separated from each other. In addition, the transfer chamber 630 of the pre-treatment module 601 and the transfer chamber 680 of the post-treatment module 602 are provided in the same size, and may be provided to completely overlap each other when viewed from above. In addition, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and may be provided so as to completely overlap each other when viewed from the top. In addition, the bake chamber 620 and the post-exposure bake chamber 670 may have the same size and may be completely overlapped with each other when viewed from the top.

The interface module 700 transfers the substrate W between the exposure processing module 600 and the exposure apparatus 900 before and after exposure. The interface module 700 includes a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located in the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are disposed to be stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is located at a height corresponding to the pre-processing module 601, and the second buffer 730 is disposed at a height corresponding to the post-processing module 602. When viewed from the top, the first buffer 720 is arranged in a line along the transfer chamber 630 of the pre-treatment module 601 and the first direction 12, and the second buffer 730 is the post-processing module 602 It is positioned to be arranged in a line along the transfer chamber 630 and the first direction 12 of.

The interface robot 740 is positioned to be spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 transports the substrate W between the first buffer 720, the second buffer 730, and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed by the preprocessing module 601 before they are moved to the exposure apparatus 900. In addition, the second buffer 730 temporarily stores the substrates W that have been processed in the exposure apparatus 900 before they are moved to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed in the housing 721 and are provided to be spaced apart from each other along the third direction 16. One substrate W is placed on each of the supports 722. The housing 721 is a direction and a pretreatment robot ( 632 has an opening (not shown) in the direction provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 731 of the second buffer 730 has an opening (not shown) in a direction in which the interface robot 740 is provided and in a direction in which the post-processing robot 682 is provided. As described above, only buffers and a robot may be provided to the interface module without providing a chamber for performing a predetermined process on the substrate W.

810: substrate support unit 820: processing container
840: lifting unit 850: liquid supply unit
890: controller

Claims (23)

In the method of processing a substrate,
The substrate is liquid-treated by supplying liquid to the substrate from the nozzle,
The nozzle moves relative to the substrate so that the impact area on the substrate to which the liquid discharged from the nozzle is impacted is changed,
The discharge direction of the liquid to the substrate is changed according to the impact region,
The impact region includes a central region of the substrate, an edge region of the substrate, and a middle region between the central region and the edge region,
When the impact region is the edge region, the discharge direction is inclined with respect to the substrate in a direction toward an end of the substrate. The method of claim 1,
When the impact region is the central region, the discharge direction is perpendicular to the substrate. delete The method of claim 1,
When the impact region is the middle region, the discharge direction is inclined with respect to the substrate. delete The method of claim 1,
When the impact area is the edge area, the impact area is provided to extend over an end of the substrate. The method of claim 1,
When the impact area is the edge area, the discharge direction is changed within a range inclined with respect to the substrate in a direction toward an end of the substrate. The method of claim 1,
When the impact area is the edge area, the nozzle is moved vertically to adjust the size of the impact area. The method of claim 2,
When the impact region is the middle region, the discharge direction is inclined with respect to the substrate in a direction toward a central region of the substrate. The method of claim 1,
The nozzle is moved so that the impact area is changed between the central area of the substrate and the edge area of the substrate,
When the impact region is the central region, the discharge direction is perpendicular to the substrate,
When the impact region is the edge region, the discharge direction is inclined with respect to the substrate in a direction toward an end of the substrate. The method of claim 10,
When the impact region is the middle region, the discharge direction is inclined with respect to the substrate in a direction toward a central region of the substrate. The method according to any one of claims 1, 2, 4 and 6 to 11,
While the substrate is being liquid treated, the substrate is rotated,
The substrate processing method in which the rotation speed of the substrate is changed according to the discharge direction. The method of claim 12,
When the liquid discharge direction is inclined toward a central region of the substrate, a rotational speed is provided faster than when the liquid is inclined toward an end of the substrate. The method of claim 13,
When the discharge direction of the liquid is inclined toward the end of the substrate, a rotational speed is provided that is slower than that when the liquid is perpendicular to the substrate. In the apparatus for processing a substrate,
A substrate support unit supporting and rotating the substrate;
A nozzle for discharging a liquid onto the substrate supported by the substrate support unit;
A moving member that moves the nozzle relative to the substrate supported by the substrate support unit;
Including a controller for controlling the nozzle and the moving member,
The controller,
Controlling the nozzle and the moving member so that the discharge direction of the liquid is changed according to the impact area on the substrate to which the liquid discharged from the nozzle is impacted,
Controlling the moving member so that the impact region is changed between the central region of the substrate and the edge region of the substrate,
When the impact area is the edge area, the nozzle and the moving member are controlled so that the discharge direction is inclined in a direction toward an end of the substrate. The method of claim 15,
The controller,
A substrate processing apparatus configured to control the nozzle and the moving member so that the discharge direction is perpendicular to the substrate when the impact region is the central region. The method of claim 16,
The controller controls the nozzle and the moving member to be inclined with respect to the substrate in a direction in which the discharge direction is toward a central region of the substrate when the impact region is the middle region. The method according to any one of claims 15 to 17,
The controller controls the substrate processing unit such that the rotational speed of the substrate is changed according to the discharge direction. The method of claim 18,
When the discharge direction of the liquid is inclined toward the central region of the substrate, the controller has a higher rotational speed than when the liquid is inclined toward the end of the substrate,
When the liquid discharge direction is inclined toward the end of the substrate, the substrate processing unit controls the substrate processing unit so that a rotational speed thereof is slower than when the liquid discharge direction is perpendicular to the substrate. The method of claim 16,
The controller controls the nozzle and the moving member so that the impact area extends over an end of the substrate when the impact area is the edge area. The method of claim 16,
The controller controls the nozzle and the moving member so that the edge region includes an end of the substrate. The method of claim 16,
The controller controls the nozzle and the moving member so that when the impact area is the edge area, the discharge direction is changed within a range inclined with respect to the substrate in a direction toward an end of the substrate. The method of claim 16,
The controller controls the nozzle and the moving member to change the size of the impact area by moving the nozzle in an up-down direction when the impact area is the edge area.

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