KR101985755B1 - Apparatus and Method for treating a substrate - Google Patents

Abstract

The present invention provides an apparatus and a method for liquid-treating a substrate. The substrate processing apparatus includes a processing vessel in which a processing space is formed, a substrate support unit for supporting and rotating the substrate in the processing space, and a liquid supply unit for supplying a liquid onto the substrate supported by the substrate support unit, The liquid supply unit includes a developer nozzle for supplying a developer on a substrate, a rinsing liquid nozzle for spraying the rinsing liquid on the substrate, and a cover liquid for forming a water film on the substrate in a stream manner Cover liquid nozzle. This can prevent damage to the pattern of the substrate due to the impact force of the rinsing liquid.

Description

[0001] APPARATUS AND METHOD FOR TREATING A SUBSTRATE [0002]

The present invention relates to an apparatus and a method for liquid-treating a substrate.

Various processes such as photolithography, etching, ashing, thin film deposition, and cleaning processes are performed for manufacturing semiconductor devices and flat panel display panels. Among these processes, the photolithography process sequentially performs the application, exposure, and development steps. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process for exposing a circuit pattern on a substrate having a photosensitive film formed thereon. The developing step is a step of selectively developing the exposed region of the substrate.

Generally, in a developing process, a developing solution is supplied onto a substrate to selectively remove an exposed region. The process by-products removed by the developing solution are rinsed by the rinsing liquid.

Recently, the critical dimension (CD) between the pattern and the pattern has been reduced to 20 nm or less by development in the technology, and the space between the pattern and the pattern is very narrow. As a result, when the rinsing liquid is supplied in the rinsing process in the rinsing process of the developing process, the process by-products remaining in the space between the pattern and the pattern are not completely rinsed.

To solve this problem, a rinse solution of a spraying method is supplied to the substrate at the time of rinse treatment in the developing process. However, as shown in FIG. 1, the pattern of the substrate W is damaged due to the impact force of the rinsing liquid discharged from the nozzle 2, which causes a process failure.

SUMMARY OF THE INVENTION The present invention provides an apparatus and method for rinsing process by-products without damaging the substrate.

An embodiment of the present invention provides an apparatus and a method for liquid-treating a substrate. The substrate processing apparatus includes a processing vessel in which a processing space is formed, a substrate support unit for supporting and rotating the substrate in the processing space, and a liquid supply unit for supplying a liquid onto the substrate supported by the substrate support unit, The liquid supply unit includes a developer nozzle for supplying a developer on a substrate, a rinsing liquid nozzle for spraying the rinsing liquid on the substrate, and a cover liquid for forming a water film on the substrate in a stream manner Cover liquid nozzle.

Wherein the apparatus further comprises a controller for controlling the liquid supply unit, wherein the controller comprises: a development processing step of supplying a developer onto a substrate supported by the substrate support unit; and a rinse treatment step of rinsing the substrate supported by the substrate support unit. And the rinse solution supply step may be sequentially performed in order to perform the rinse solution supply step and the rinse solution supply step sequentially. The controller may control the liquid supply unit so that the cover liquid and the rinse liquid are supplied together in the rinse liquid supply step.

The cover liquid nozzle may be provided to be fixedly coupled to the processing container, and the rinse liquid nozzle may be provided movably. The controller controls the liquid supply unit such that a cover liquid supply step is performed while the rinse nozzle is moved from the standby position to the processing position, wherein the process position is such that the rinse nozzle faces the substrate supported by the substrate support unit Position, and the atmospheric position may include a position where the rinse nozzle is out of the process position.

The apparatus includes a housing having an interior space in which the processing container and the liquid supply unit are located, an opening formed in one side of the processing container and an opening through which the substrate is taken in and out, and a rinse moving member for linearly moving the rinse nozzle member in a first direction Wherein the opening is located at one side of the parallel line with respect to a parallel line in the first direction passing through the center axis of the substrate support unit and the rinsing member and the cover nozzle are located on the other side of the parallel line .

A method of liquid processing a substrate includes a developing step of supplying a developing solution onto the substrate and a rinsing treatment step of rinsing the developing solution remaining on the substrate, wherein the rinsing step includes a step of applying a cover liquid The first rinsing liquid is supplied to the substrate in a spraying manner.

The cover liquid may be supplied before the first rinsing liquid. The discharging position of the cover liquid is fixed and the discharging position of the first rinsing liquid can be moved between the central region and the edge region of the substrate. The cover liquid may be ejected from a nozzle fixed to a processing vessel provided to enclose the substrate, and the first rinse liquid may be ejected from a nozzle moved between a central region of the substrate and a most prominent region.

The rinsing step may further include a second rinsing liquid supplying step of supplying a second rinsing liquid on the substrate after the first rinsing liquid supplying step in a stream manner. The cover liquid, the first rinsing liquid, and the second rinsing liquid may be provided in the same liquid.

According to the embodiment of the present invention, the rinsing liquid is supplied in a spraying manner in a state in which the cover liquid remains on the substrate. This can prevent damage to the pattern of the substrate due to the impact force of the rinsing liquid.

Further, according to the embodiment of the present invention, the cover liquid supplying step is performed while the rinse nozzle member is moved from the standby position to the processing position. Therefore, the cover liquid supplying step is included in the movement time of the rinse nozzle member, and the time required for the rinse processing step can be shortened.

According to the embodiment of the present invention, in the rinse processing step of the substrate, the rinsing liquid is firstly supplied in a spraying manner and secondarily supplied in a streaming manner. This makes up for the disadvantages of the spraying method and the streaming method of the rinsing liquid, respectively.

Further, according to the embodiment of the present invention, the opening is located on one side and the rinsing member and the cover nozzle are located on the other side, with reference to a line passing through the central axis of the substrate supporting unit. This makes it possible to prevent the rinsing member and the cover nozzle from interfering with the feeding path of the substrate.

1 is a cross-sectional view showing a pattern of a substrate when a rinse liquid is supplied by a spray method.
2 is a top view of a substrate processing facility according to an embodiment of the present invention.
3 is a cross-sectional view of the installation of FIG. 1 viewed in the AA direction.
Fig. 4 is a cross-sectional view of the equipment of Fig. 1 viewed from the BB direction. Fig.
Fig. 5 is a cross-sectional view of the installation of Fig. 1 viewed from CC direction.
6 is a cross-sectional view showing the substrate processing apparatus of FIG.
7 is a plan view showing the substrate processing apparatus of FIG.
Fig. 8 is a perspective view showing the treatment nozzle member of Fig. 7; Fig.
Fig. 9 is a perspective view showing the rinse nozzle member of Fig. 7; Fig.
10 is a flow chart showing a process of liquid-processing a substrate using the liquid supply unit of FIG.
11 to 14 are views showing a process of rinsing a substrate using the liquid supply unit of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of this embodiment can be used to perform a developing process with respect to a substrate connected to an exposure apparatus. However, the present embodiment is not limited thereto, and can be applied variously as long as it is a process of liquid-processing a substrate. In this embodiment, a wafer is used as a substrate.

Hereinafter, the substrate processing apparatus of the present invention will be described with reference to FIG. 2 to FIG.

FIG. 2 is a plan view of the substrate processing apparatus according to the embodiment of the present invention, FIG. 3 is a cross-sectional view of the apparatus of FIG. 1 viewed from the direction AA, FIG. 4 is a cross- 1 is a cross-sectional view of the facility in the CC direction.

2 to 5, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, 700 will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is constructed so that the index robot 220, the first buffer robot 360 and the developing robot 482 of the developing module 402 described later mount the substrate W on the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first buffer module 500 of the second buffer module 500 And transfers the substrate W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the substrate W. [ The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the substrate W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the photoresist is applied.

The bake chamber 420 heat-treats the wafer W. For example, the bake chambers 420 may be formed by a prebake process in which the wafer W is heated to a predetermined temperature to remove organic matter and moisture on the surface of the wafer W before the photoresist is applied, A soft bake process is performed after coating the wafer W on the wafer W, and a cooling process for cooling the wafer W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process . The development module 402 has a development chamber 800, a bake chamber 470, and a transfer chamber 480. [ The development chamber 800, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 800 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 800 are provided and a plurality of developing chambers 800 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six developing chambers 800 are provided is shown. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470, the development chambers 800, the second buffer 330 and the cooling chamber 350 of the first buffer module 300 and the second buffer module 500, And the second cooling chamber 540 of the second cooling chamber 540. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 800 all have the same structure. However, the types of developers used in the respective developing chambers 800 may be different from each other. The development chamber 800 is provided with an apparatus for developing a substrate. The development chamber 800 removes a region of the photoresist on the substrate W where light is irradiated. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed. In this embodiment, the development chamber 800 is provided with a substrate processing apparatus 800 for liquid-processing the substrate W. FIG. 6 is a cross-sectional view showing the substrate processing apparatus of FIG. 2, and FIG. 7 is a plan view showing the substrate processing apparatus of FIG. 6 and 7, the substrate processing apparatus 800 includes a housing 802, a fan filter unit 808, a substrate support unit 810, a processing vessel 820, a lift unit 840, (850), and a controller (890).

The housing 802 has an inner space, and a fan filter unit 808 is installed in the ceiling scene. The fan filter unit 808 generates a downward flow in the inner space of the housing 802. The housing 802 has an opening 806 formed in one side wall thereof. The opening 806 is formed to be positioned to face the processing vessel 820. The opening 806 functions as a substrate entry / exit port 806 through which the substrate W can be loaded / unloaded into the internal space of the housing 802. The opening 806 is opened and closed by a door 804.

The fan filter unit 808 is a unit in which the filter and the air supply fan are modularized into a single unit and supplies clean air to the inside of the housing 802 by filtering. The clean air passes through the fan filter unit and is supplied into the housing 802 to form a vertical downward airflow. This downward airflow of air provides a uniform air flow to the top of the substrate W. [ The gaseous by-products generated by the treatment process within the treatment space are easily discharged through the exhaust line 525 by the down stream.

The substrate supporting unit 810 supports and rotates the substrate W. The substrate support unit 810 includes a support plate 812, a rotation axis 814, and a driver 815. The support plate 812 supports the substrate. The support plate 812 is provided to have a circular plate shape. The support plate 812 may have a smaller diameter than the substrate W. [ A suction hole 816 is formed on the support surface of the support plate 812, and a negative pressure is applied to the suction hole 816. The substrate W can be vacuum-adsorbed to the support surface by negative pressure. The rotary shaft 814 is provided so as to have a tubular shape whose longitudinal direction faces up and down. The rotary shaft 814 is coupled to the bottom surface of the support plate 812. The driver 815 transmits the rotational force to the rotating shaft 814. The rotary shaft 814 is rotatable about the central axis by the rotational force provided from the driver 815. [ The support plate 812 is rotatable together with the rotation shaft 814. The rotating speed of the rotating shaft 814 is adjusted by a driving unit 815 so that the rotating speed of the substrate W can be adjusted. For example, the driver 815 may be a motor.

The processing vessel 820 provides a processing space in which a developing process is performed. The processing vessel 820 recovers the liquid used in the developing process. The processing vessel 820 is provided in the form of a cup having an open top. The processing vessel 820 includes an inner recovery cylinder 822 and an outer recovery cylinder 826. Each of the recovery cylinders 822 and 826 recovers liquids of different kinds from each other. The inner recovery cylinder 822 is provided in an annular ring shape surrounding the substrate support member 810 and the outer recovery cylinder 826 is provided in an annular ring shape surrounding the inner recovery cylinder 822. Each of the inner space 822a of the inner recovery cylinder 822 and the space 826a between the outer recovery cylinder 826 and the inner recovery cylinder 822 are respectively connected to the inner recovery cylinder 822 and the outer recovery cylinder 826, And serves as an inflow port. Recovery bins 822b and 826b extending perpendicularly to the bottom of the recovery bins 822 and 826 are connected to the recovery bins 822 and 826, respectively. Each of the recovery lines 822b and 826b discharges the liquid introduced through the respective recovery cylinders 822 and 826. [ The discharged liquid can be reused through an external treatment liquid regeneration system (not shown).

The lift unit 840 adjusts the relative height between the processing container 820 and the substrate supporting unit 810. The elevating unit 840 moves the processing vessel 820 in the vertical direction. The lifting unit 840 includes a bracket 842, a moving shaft 844, and a driver 846. The bracket 842 connects the processing vessel 820 and the moving shaft 844. The bracket 842 is fixed to the vertical wall 822 of the processing vessel 820. The moving shaft 844 is provided such that its longitudinal direction is directed up and down. The upper end of the moving shaft 844 is fixedly coupled to the bracket 842. The moving shaft 844 is moved up and down by the actuator 846 and the processing vessel 820 is movable up and down together with the moving shaft 844. [ For example, the actuator 846 may be a cylinder or a motor.

The liquid supply unit 850 supplies various kinds of liquid onto the substrate W supported by the substrate holding unit 810. [ The liquid supply unit 850 includes a process liquid supply unit 852, a rinsing liquid supply unit 1000, and a cover liquid supply unit 880.

The treatment liquid supply unit 852 supplies the treatment liquid and the wetting liquid onto the substrate W. The treatment liquid supply unit 852 includes a first movable member 860 and a treatment nozzle member 870. The first movable member 860 moves the process nozzle member 870 to the process position and the standby position. Here, the process position is a position where the process nozzle member 870 faces the substrate W in the up-and-down direction, and the standby position is a position where the process nozzle member 870 is out of the process position. The first moving member 860 linearly moves the treatment nozzle member 870 in the first direction. The first moving member 860 includes a first guide rail 862 and a first arm 864. The first guide rail 862 is located at one side of the processing vessel 820. An opening 806 is located at one side of the parallel line with respect to a parallel line of the first direction 12 passing through the center axis of the substrate supporting unit 810 and the first guide rail 862 is positioned at the other side of the parallel line. For example, the longitudinal direction of the first guide rail 862 may be provided so as to be directed in a direction parallel to the first direction 12. The first arm 864 is provided so as to have a longitudinal direction perpendicular to the first guide rail 862 when viewed from above. for example. The longitudinal direction of the first arm 864 may be provided so as to be in a direction parallel to the second direction 14. A treatment nozzle member 870 is coupled to one end of the first arm 864. The other end of the first arm 864 is installed on the first guide rail 862. Thus, the first arm 864 and the treatment nozzle member 870 are movable together along the longitudinal direction of the first guide rail 862.

The treatment nozzle member 870 discharges the treatment liquid and the wetting liquid. FIG. 8 is a perspective view showing the treatment nozzle member of FIG. 6; FIG. 8, the treatment nozzle member 870 includes a treatment body 872, a wetting nozzle 874, a first treatment nozzle 876, and a second treatment nozzle 878. As shown in FIG. The treatment body 872 supports the wetting nozzle 874, the second treatment nozzle 878, and the first treatment nozzle 876. The treatment body 872 is fixedly coupled to the bottom surface of one end of the first arm 864 (864). A wetting nozzle 874, a first processing nozzle 876, and a second processing nozzle 878 are fixedly coupled to the bottom surface of the processing body 872, respectively.

The first treatment nozzle 876 discharges the treatment liquid in a stream manner. The first processing nozzle 876 has a circular stream discharge port. The stream discharge port is provided so as to face in the vertical downward direction.

The second processing nozzle 878 discharges the processing liquid in a liquid curtain system. The treatment nozzle 878 has a slit-shaped slit discharge port. The slit discharge port has a longitudinal direction parallel to the guide rail 862. The slit discharge port may have a longitudinal direction toward the first direction (12). The slit discharge port is provided so as to face downward inclined direction. The second treatment nozzle 878 may be provided with a downward slope so as to discharge the liquid at the same point as the first treatment nozzle 876. [ The slit discharge port is provided so as to have a length shorter than the radius of the substrate (W). According to one example, the slit discharge port may be provided so as to be directed in a downward inclined direction from the second processing nozzle 878 toward the first processing nozzle 876. [ The second processing nozzle 878 is located at one side of the first processing nozzle 876. The second treatment nozzle 878 is positioned opposite to the first treatment nozzle 876. [ The second treatment nozzle 878 and the first treatment nozzle 876 may be arranged along the second direction 14 as viewed from above. For example, the treatment liquid discharged by the second treatment nozzle 878 and the first treatment nozzle 876 may be the same kind of liquid. The treatment liquid may be a developer.

The wetting nozzle 874 discharges the wetting liquid in a streaming manner. The wetting nozzle 874 is positioned adjacent to the first treatment nozzle 876 and the second treatment nozzle 878. [ The wetting nozzle 874 and the second process nozzle 878 may be arranged along the first direction 12 as viewed from above. The wetting nozzle 874 has a circular stream outlet. The stream discharge port is provided so as to face downwardly inclined direction. According to one example, the stream outlet of the wetting nozzle 874 may be provided in a downward slope in the same direction as the slit ejection opening. For example, the wetting liquid may be pure water (DIW). The wetting liquid can change the surface property of the substrate W to be hydrophilic before the developer is supplied.

The rinsing liquid supply unit (1000) supplies a rinsing liquid and a drying gas onto the substrate (W). The rinsing liquid supply unit 1000 includes a second moving member 1100 and a rinsing nozzle member 1300. 9 is a perspective view showing the rinse nozzle member 1300 of FIG. 7 and 9, the second moving member 1100 moves the rinse nozzle member 1300 to the process position and the standby position. Here, the process position is a position where the rinse nozzle member 1300 faces the substrate W in the up-and-down direction, and the standby position is a position where the rinse nozzle member 1300 is out of the process position. The second moving member 1100 is located at one side of the processing vessel 820. The second moving member 1100 is positioned on the other side of the parallel line with respect to the parallel line of the first direction 12 passing through the central axis of the substrate supporting unit 810. [ Since the second moving member 1100 has the same shape as the first moving member 860, detailed description thereof will be omitted.

The rinse nozzle member 1300 can discharge the rinsing liquid in a spraying method or a streaming method, respectively. The rinse nozzle member 1300 also discharges dry gas. The rinse nozzle member 1300 includes a first body 1320 and a second body 1340.

A first discharge port 1322 is formed in the first body 1320. The first discharge port 1322 is provided so as to face the vertical downward direction. The rinsing liquid of the spraying method is discharged through the first discharge port 1322. According to an example, the first body 1320 may be a rinsing liquid nozzle for discharging a mixed fluid in which a rinsing liquid and a gas are mixed. The rinsing liquid of the spraying method may be a mixed fluid. The first body 1320 may be an air flow nozzle.

A second discharge port 1342 and a gas discharge port 1344 are formed in the second body 1340. The second body 1340 is coupled to one side of the first body 1320. The second discharge port 1342 is provided so as to face downwardly inclined direction, and the gas discharge port 1344 is provided to face downward in a vertical direction. The rinse liquid of the stream system is discharged through the second discharge port 1342.

Hereinafter, the rinsing liquid discharged through the first discharge port 1322 in a spraying manner is referred to as a first rinsing liquid, and the rinsing liquid discharged in a stream manner through the second discharge port 1342 is referred to as a second rinsing liquid. The rinse nozzle member 1300 can discharge the first rinse liquid first, and secondarily discharge the second rinse liquid. The supply region of the second rinse liquid and the supply region of the dry gas may be positioned adjacent to each other. For example, the first rinsing liquid and the second rinsing liquid may be pure water (DIW), and the gas may be an inert gas. The gas may be nitrogen gas (N ₂ ).

The cover liquid supply unit 880 supplies the cover liquid onto the substrate W. [ The cover liquid supply unit 880 includes a cover nozzle 884 and a bracket 882. The cover nozzle 884 supplies the cover liquid onto the substrate W. [ The cover nozzle 884 is fixedly coupled to the processing vessel 820 by a bracket 882. The cover nozzle 884 can be fixedly coupled to the upper end of the processing vessel 820. The cover liquid discharged from the cover nozzle 884 may be discharged in a parabolic form. The discharge flow rate and the discharge angle may be fixed such that the cover liquid is supplied to the central region of the substrate W by the cover nozzle 884. [ The cover liquid may be the same kind of liquid as the first rinse liquid.

The controller 890 controls the liquid supply unit 850 so that the development processing step and the rinse processing step S20 are sequentially performed. In the development processing step, the prewetting solution and the developing solution are supplied in sequence, and in the rinsing processing step (S20), the cover liquid, the first rinsing liquid, the second rinsing liquid, and the drying gas are supplied. The second rinsing liquid may be supplied after the first rinsing liquid is supplied.

Next, a process of developing the substrate W using the above-described substrate processing apparatus 800 will be described. 10 is a flow chart showing a process of liquid-processing a substrate using the liquid supply unit of FIG. Referring to Fig. 10, the liquid processing method of the substrate W includes a developing processing step and a rinsing processing step S20. The development processing step includes a prewetting step S11, a first processing step S12, and a second processing step S13. The pre-wetting step S11, the first processing step S12, and the second processing step S13 are sequentially performed.

In the prewetting step S11, the wetting nozzle supplies the wetting liquid to the central region of the substrate W. [ The wetting liquid is diffused on the substrate W to convert the surface of the substrate W into a wet state. The surface of the substrate W is changed to have the same hydrophilic property as the developer by the wetting liquid.

In the first processing step S12, the first processing nozzle 876 supplies the processing liquid to the central region of the substrate W in a stream manner. A first process liquid film is formed on the upper surface of the substrate W by the first process step S12.

In the second processing step S13, the second processing nozzle 878 supplies the processing liquid onto the substrate W in a liquid curtain manner. The second processing nozzle 878 linearly moves in the first direction 12 to supply the processing liquid to secondary processing the substrate W. The treatment liquid is supplied from the central region of the substrate W to the edge region. A second process liquid film is formed on the upper surface of the substrate W by the second process step S13. The second process liquid film has a thickness larger than that of the first process liquid film.

The rinsing step S20 includes a cover liquid supplying step S21, a first rinsing liquid supplying step S22, a second rinsing liquid supplying step S23, and a gas supplying step S24. 11 to 14 are views showing a process of rinsing a substrate using the liquid supply unit of FIG. 11 to 14, the cover liquid supplying step S21, the first rinsing liquid supplying step S22, the second rinsing liquid supplying step S23, and the gas supplying step S24 are sequentially performed.

In the cover liquid supplying step S21, the cover nozzle 884 supplies the cover liquid to the central region of the substrate W. [ A cover liquid film is formed on the upper surface of the substrate W by the cover liquid. According to one example, the rinse nozzle member 1300 is moved from the standby position to the process position while the cover liquid supply step S21 is in progress. When the rinse nozzle member 1300 is moved to a position facing the central region of the substrate W, the cover liquid supplying step S21 is ended and the first rinse liquid supplying step S22 is proceeded.

In the first rinsing liquid supply step (S22), the cover liquid and the first rinsing liquid of the spraying method are supplied together. The cover liquid is continuously supplied from the time when the cover liquid supplying step (S21) starts to the time when the first rinse liquid supplying step (S22) ends. Since the cover liquid film is formed on the substrate W, damage to the substrate W due to the impact force of the first rinse liquid can be minimized. The cover liquid is supplied to the center region of the substrate W, and the first rinse liquid is moved from the central region of the substrate W to the edge region. Thereby weakening the adhesion of the process by-products remaining on the substrate W. When the first rinse solution supplying step (S22) is completed, the second rinse solution supplying step (S23) proceeds.

In the second rinse liquid supply step (S23), the second rinse liquid of the stream system is supplied to the central region of the substrate (W). The process byproduct whose adhesion is weakened by the second rinsing liquid is removed. The process by-products are recovered into the treatment vessel 820 together with the second rinsing liquid. When the second rinse solution supply step (S23) is completed, the gas supply step (S24) proceeds.

In the gas supply step (S24), the second rinsing liquid and the dry gas are supplied together. In the gas supply step S24, the supply region of the second rinsing liquid is moved from the center region of the substrate W to the edge region. The second rinsing liquid is positioned at the front end with respect to the moving direction of the second rinsing liquid when viewed from above, and the drying gas is positioned at the rear end. Thus, the second rinsing liquid remaining on the substrate W can be removed.

In the above-described embodiment, the second rinse solution supply step (S23) and the gas supply step (S24) are performed after the first rinse solution supply step (S22). However, the second rinsing liquid supply step (S23) may be omitted.

And the cover liquid is supplied while the rinse nozzle member 1300 is moved to the process position. However, after the supply of the cover liquid is stopped, the rinse nozzle member 1300 may be moved to the process position to perform the first rinse solution supply step S22.

2 to 5, the bake chamber 470 of the developing module 402 heat-treats the substrate W. For example, the bake chambers 470 may include a post-bake process for heating the substrate W before the development process is performed, a hard bake process for heating the substrate W after the development process is performed, And a cooling step for cooling the substrate W is performed. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The second buffer module 500 is provided as a path through which the substrate W is transferred between the coating and developing module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the substrate W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W that have been processed in the application module 401. The first cooling chamber 530 cools the substrate W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the substrates W that have undergone the cooling process in the first cooling chamber 530. [ The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transported to a preprocessing module 601 described later. The second cooling chamber 540 cools the substrates W before the processed substrates W are transferred to the developing module 402 in the post-processing module 602 described later. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the substrates W processed in the post-processing module 602 may be temporarily stored in the added buffer and then conveyed to the developing module 402.

The pre- and post-exposure processing module 600 may process a process of applying a protective film for protecting the photoresist film applied to the substrate W during liquid immersion exposure, when the exposure apparatus 900 performs the liquid immersion exposure process. In addition, the pre- and post-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before the exposure process, and the post-process module 602 performs a process of processing the substrate W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. The protective film application chamber 610 and the bake chamber 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application chambers 610 are provided and are arranged along the third direction 16 to form layers. Alternatively, a plurality of protective film application chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, a plurality of bake chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film applying chamber 610 applies a protective film for protecting the resist film on the substrate W during liquid immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the substrate W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the supporting plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 612.

The bake chamber 620 heat-treats the substrate W coated with the protective film. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, while others may only have the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake chamber 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure baking chamber 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake chambers 670 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second And transfers the substrate W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotating, the nozzle 663 may move linearly or rotationally from the central region of the substrate W to the edge region.

The post-exposure bake chamber 670 heats the substrate W subjected to the exposure process using deep UV light. The post-exposure baking step heats the substrate W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake chamber having only the cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. Further, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap with each other when viewed from above. Further, the bake chamber 620 and the post-exposure bake chamber 670 are provided in the same size, and can be provided so as to completely overlap each other when viewed from above.

The interface module 700 transfers the substrate W between the exposure pre- and post-processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 731 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. Only the buffers and robots can be provided as described above without providing a chamber for performing a predetermined process on the substrate W in the interface module.

870: Processing nozzle member 880: Cover liquid supply unit
884: cover nozzle 890:
1300: Rinse nozzle member

Claims (12)

A processing chamber in which a processing space is formed;
A substrate supporting unit for supporting and rotating the substrate in the processing space;
A liquid supply unit for supplying liquid onto the substrate supported by the substrate supporting unit;
And a controller for controlling the liquid supply unit,
The liquid supply unit includes:
A developer nozzle for supplying a developer onto the substrate;
A rinsing nozzle provided on the substrate to spray the rinsing liquid in a spraying manner and provided movably;
A cover liquid nozzle fixedly coupled to the processing vessel and supplying a cover liquid for forming a water film on a substrate in a streaming manner,
The controller controls the liquid supply unit to supply the cover liquid onto the substrate while the rinse nozzle is being moved from the standby position to the processing position,
Wherein the process position is a position where the rinse nozzle faces the substrate supported by the substrate supporting unit,
Wherein the atmospheric position includes a position where the rinse nozzle is out of the process position. delete The method according to claim 1,
Wherein the controller controls the liquid supply unit to sequentially perform a developing process for supplying a developing solution onto a substrate supported by the substrate supporting unit and a rinsing process for rinsing the substrate supported on the substrate supporting unit,
In the rinsing step, a cover liquid supplying step for supplying the cover liquid and a rinsing liquid supplying step for supplying the rinsing liquid by the spray method are sequentially performed,
Wherein the cover liquid supplying step is performed while the rinsing nozzle is moved from the standby position to the processing position. The method of claim 3,
Wherein the controller controls the liquid supply unit so that the cover liquid and the rinse liquid are supplied together in the rinse liquid supply step. delete The method according to any one of claims 1, 3, and 4,
The apparatus comprises:
A housing having an inner space in which the processing container and the liquid supply unit are located, and having an opening through which a substrate is introduced into and taken out from the one side;
Further comprising a rinsing member for linearly moving the rinsing nozzle in a first direction,
Wherein the opening is located at one side of the parallel line and the rinse moving member and the cover liquid nozzle are located at the other side of the parallel line with respect to a parallel line in the first direction passing through the central axis of the substrate supporting unit. A method for liquid processing a substrate,
A development processing step of supplying a developer onto the substrate;
A rinse treatment step of rinsing the developing solution remaining on the substrate,
In the rinsing step,
Supplying a first rinsing liquid to the substrate in a spraying manner in a state in which the cover liquid is supplied to the substrate by a water stream method,
Wherein the cover liquid is ejected from a nozzle fixed to a processing vessel provided to enclose the substrate,
Wherein the cover liquid is supplied while the nozzle supplying the first rinse liquid is moved to supply the first rinse liquid to the substrate. 8. The method of claim 7,
Wherein the discharging position of the cover liquid is fixed and the discharging position of the first rinsing liquid is moved between a central region and an edge region of the substrate. 9. The method according to claim 7 or 8,
Wherein the cover liquid is supplied prior to the first rinsing liquid. delete 10. The method of claim 9,
The rinsing step may comprise:
Further comprising a second rinsing liquid supply step for supplying a second rinsing liquid onto the substrate after the first rinsing liquid supply step in a water flow manner. 12. The method of claim 11,
Wherein the cover liquid, the first rinsing liquid, and the second rinsing liquid are provided in the same liquid.

Images